Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device

Abstract

To provide a manufacturing apparatus for a semiconductor device including a bonding tool to hold a chip in a non-contact manner.SOLUTION: A manufacturing apparatus 10 for a semiconductor device includes a stage 32 on which a substrate 110 is placed, a bonding head 40 to bond a chip 100 to the substrate 110, and a controller 70. The bonding head 40 includes a bonding tool 42 for holding the chip 100 in a non-contact manner, a suction source 64 for applying a negative pressure on the holding surface 48 of the bonding tool 42 to suck the chip 100, and a vibration source 60 for applying ultrasonic vibration to the holding surface 48, and restricting movement of the chip 100 relative to the holding surface 48. The controller 70 is configured to ground the chip 100 in a state in which the chip 100 is separated from the holding surface 48.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] This specification discloses a manufacturing apparatus for manufacturing a semiconductor device by bonding a chip to a substrate, and a method for manufacturing a semiconductor device.

Background Art

[0002] In recent years, in order to achieve further miniaturization and higher density of semiconductor devices, technologies for non-contact holding of semiconductor chips have been proposed. For example, Patent Document 1 discloses a chip holder that uses the ultrasonic squeeze effect to hold a semiconductor chip in a non-contact manner.

[0003] In Patent Document 1, the above-described chip holder is used as a pickup collet. With such a configuration, it is possible to effectively prevent contamination and breakage of the chip during pickup of the chip.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Here, usually, a chip picked up by a pickup collet is delivered to a bonding tool. Then, the bonding tool presses the chip received from the pickup collet against the substrate and bonds it.

[0006] In Patent Document 1, the technology of the above-described chip holder has not been sufficiently studied for application to a bonding tool. Therefore, this specification discloses a manufacturing apparatus for a semiconductor device having a bonding tool that holds a chip in a non-contact manner, and a method for manufacturing a semiconductor device.

Means for Solving the Problems

[0007] The manufacturing apparatus for a semiconductor device disclosed in this specification includes a stage on which a substrate is placed, a bonding head that bonds a chip to the substrate, and a controller. The bonding head includes a bonding tool that holds the chip in a non-contact manner, a suction source that applies a negative pressure to a holding surface of the bonding tool to suck the chip, and a vibration source that applies ultrasonic vibration to the holding surface and restricts movement of the chip with respect to the holding surface. The controller is configured to ground the chip while the chip is separated from the holding surface. This is the gist of the invention.

[0008] In this case, further, a pressure sensor that detects the pressure in the suction path as a suction pressure is provided, and the controller may detect grounding of the chip based on a change in the suction pressure.

[0009] Also, the controller may stop suction by the suction source at the timing when the grounding is detected.

[0010] Also, the controller is configured to alternatively select a first mode and a second mode. In the first mode, the controller grounds the chip while the chip is separated from the holding surface. In the second mode, the controller horizontally moves the chip together with the bonding tool while the chip is separated from the holding surface, and grounds the chip by lowering the chip together with the tool while the chip is in contact with the holding surface.

[0011] Furthermore, a pickup collet that picks up the chip from a chip supply source is provided, and the bonding tool may receive the chip from the pickup collet in a non-contact manner.

[0012] In this case, the pickup collet may hold the chip in a non-contact manner.

[0013] Further, the outer shape size of the holding surface is larger than the outer shape size of the chip, and a positioning recess having a shape along at least a part of the outer shape of the chip may be formed on the holding surface.

[0014] A method for manufacturing a semiconductor device disclosed in this specification, wherein, with the bonding tool holding the chip in a non-contact state, the chip together with the bonding tool is moved, and the chip is bonded to a substrate placed on a stage. When the bonding tool holds the chip in a non-contact state, a negative pressure is applied to the holding surface of the bonding tool, and ultrasonic vibration is applied to the holding surface to form a squeeze film between the holding surface and the chip. With the chip separated from the holding surface, the chip is grounded. This is the gist of the invention.

Advantages of the Invention

[0015] According to the technology disclosed in this specification, since the chip is grounded with the chip separated from the holding surface, the load on the chip can be reduced, and breakage of the chip can be effectively prevented.

Brief Description of the Drawings

[0016]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0017] Hereinafter, the configuration of the manufacturing apparatus 10 for a semiconductor device will be described with reference to the drawings. FIG. 1 is a schematic diagram showing the configuration of the manufacturing apparatus 10. Further, FIG. 2 is a schematic diagram showing the configuration of the bonding head 40, and FIG. 3 is a bottom view of the bonding tool 42.

[0018] The manufacturing apparatus 10 is an apparatus for manufacturing a semiconductor device by bonding one or more semiconductor chips 100 to a substrate 110. This manufacturing apparatus 10 includes a chip supply source 12, a pickup unit 14, and a bonding unit 30. In the chip supply source 12, semiconductor chips 100 attached to a dicing tape 16 are prepared. The pickup unit 14 includes a push-up pin 20 that pushes up the semiconductor chip 100 attached to the dicing tape 16 from below, and a pickup collet 18 that picks up the pushed-up semiconductor chip 100.

[0019] The semiconductor chip 100 is attached to the dicing tape 16 in a posture where the surface to be joined to the substrate 110, that is, the joining surface (thick line portion in FIG. 1) faces upward. The pickup collet 18 holds this joining surface. When the pickup collet 18 receives the semiconductor chip 100 from the dicing tape 16, it rotates 180 degrees around a specified rotation axis. As a result, the joining surface changes from a downward-facing state to an upward-facing state.

[0020] The bonding unit 30 includes a stage 32 on which the substrate 110 is placed, and a bonding head 40 that holds and transports the semiconductor chip 100. As shown in FIG. 2, the bonding head 40 includes a bonding tool 42, a vibration source 60, and a suction source 64.

[0021] The bonding tool 42 holds and transports the semiconductor chip 100. This bonding tool 42 can be moved in the horizontal and vertical directions by a moving mechanism (not shown). A holding plate 46 is provided at the end of the bonding tool 42. The bottom surface of the holding plate 46 functions as a holding surface 48 for holding the semiconductor chip 100.

[0022] As shown in FIG. 3, a suction hole 50, an air flow forming groove 54, and a positioning recess 56 are formed in this holding surface 48. In FIG. 3, the diagonally hatched portion indicates a recess that does not penetrate the holding plate 46, and the cross-hatched portion indicates a hole that penetrates the holding plate 46. The suction hole 50 is fluidly connected to a suction source 64 described later. The suction source 64 applies a negative pressure to the suction hole 50. The air flow forming groove 54 is a groove connected to the suction hole 50. In FIG. 3, the air flow forming groove 54 includes four radial lines that radiate from the suction hole 50 and a rectangular line that surrounds the four radial lines. However, the shape of the air flow forming groove 54 may be appropriately changed as long as it is connected to the suction hole 50. The positioning recess 56 is a groove independent of the air flow forming groove 54 and is located outside the air flow forming groove 54. The reasons for providing such an air flow forming groove 54 and positioning recess 56 will be described later.

[0023] The vibration source 60 applies ultrasonic vibration to the holding surface 48. Such a vibration source 60 has, for example, an ultrasonic vibration element 62 and an AC power supply 63 as shown in FIG. 2. The ultrasonic vibration element 62 receives a drive signal that is a voltage signal and generates longitudinal vibration. This ultrasonic vibration element 62 has, for example, lead zirconate titanate (commonly known as PZT) that vibrates when receiving an AC voltage, and is a bolt-clamped Langevin type vibrator (commonly known as BLT or BL vibrator) in which the PZT is sandwiched between metal blocks and a bolt is used to apply clamping pressure. The AC power supply 63 applies an alternating voltage having a frequency corresponding to a predetermined resonance frequency to the ultrasonic vibration element 62. By driving the vibration source 60, a squeeze film Sf is generated between the holding surface 48 and the semiconductor chip 100, which will be described later.

[0024] The suction source 64 generates a negative pressure and has, for example, an air pump or the like. The suction source 64 communicates with the suction path 52. By driving the suction source 64, a negative pressure acts on the suction holes 50, and a suction force that attracts the semiconductor chip 100 to the holding surface 48 is generated.

[0025] The bonding unit 30 is further provided with a positioning camera 68. Such a camera 68 images the bonding tool 42 holding the semiconductor chip 100 from below. Hereinafter, the image captured by this camera 68 is referred to as an inspection image. A controller 70 described later analyzes the inspection image and calculates the position and angle of the semiconductor chip 100 with respect to the bonding tool 42. Then, according to the calculated position and angle, the movement amount of the bonding tool 42 is corrected.

[0026] The controller 70 controls the driving of the bonding head 40 and the like described above. As shown in FIG. 1, the controller 70 is physically a computer having a processor 72 and a memory 74. In FIG. 1, the controller 70 is illustrated as a single computer, but the controller 70 may be physically configured by combining a plurality of separated computers.

[0027] As shown in FIG. 1, the bonding tool 42 receives the semiconductor chip 100 from the pickup collet 18 in the upward posture and holds the surface of the semiconductor chip 100 opposite to the bonding surface. Then, after the bonding tool 42 moves directly above the specified bonding position, it descends toward the substrate 110. Then, the bonding tool 42 presses the semiconductor chip 100 against the substrate 110 and bonds the semiconductor chip 100 to the substrate 110. By bonding the required number of semiconductor chips 100 to one substrate 110, a semiconductor device is manufactured.

[0028] Here, the form of this bonding is not particularly limited. In this example, the semiconductor chip 100 is directly bonded to the substrate 110. Direct bonding is a bonding form in which the semiconductor chip 100 is directly joined to the substrate 110 without using an adhesive. For example, in direct bonding, the chip-side electrode formed on the bonding surface of the semiconductor chip 100 is joined to the substrate-side electrode formed on the substrate 110. At this time, the electrodes may be welded using heat or joined at room temperature.

[0029] By the way, in such direct bonding, it is easily affected by foreign matter and chipping on the bonding surface, and even if there is a little foreign matter or chipping, bonding defects are likely to occur. Therefore, the bonding tool 42 in this example uses the ultrasonic squeeze effect to hold the semiconductor chip 100 in a non-contact manner. This will be described in detail below.

[0030] When holding the semiconductor chip 100 with the bonding tool 42, the controller 70 drives the suction source 64 to apply a negative pressure to the suction hole 50 and drives the vibration source 60 to apply ultrasonic vibration to the holding surface 48. When the semiconductor chip 100 is brought close to the holding surface 48 while the holding surface 48 is ultrasonically vibrating, an ultrasonic squeeze effect occurs between the holding surface 48 and the semiconductor chip 100. The ultrasonic squeeze effect is an effect in which when one of two flat plates facing each other through a minute gap is vibrated, a pressure higher than that from the outside is generated in the gap due to the influence of the viscosity in the gap. When this ultrasonic squeeze effect occurs, an ultrasonic squeeze film Sf that inhibits the contact between the semiconductor chip 100 and the holding surface 48 is formed between the semiconductor chip 100 and the holding surface 48, and a holding force that keeps the semiconductor chip 100 on the surface of the squeeze film Sf is generated.

[0031] Here, the holding force generated by the ultrasonic squeezing effect (hereinafter referred to as "ultrasonic holding force") occurs in both the direction perpendicular to and parallel to the holding surface 48 (i.e., the surface direction). That is, when the ultrasonic squeezing effect occurs, a force acts on the semiconductor chip 100 to keep it at a position a predetermined distance away from the holding surface 48, or in other words, a force in the direction of floating from the holding surface 48 acts. Also, when the ultrasonic squeezing effect occurs, the semiconductor chip 100 tries to stay within the vibration plane. Therefore, even if an external force causes the semiconductor chip 100 to be temporarily displaced in the surface direction, the semiconductor chip 100 moves in the surface direction so that its entire body is positioned within the vibration plane and tries to return to a state facing the holding surface 48.

[0032] In this example, in order to assist such ultrasonic holding force, an attractive force due to negative pressure is further generated on the holding surface 48. The controller 70 controls the driving of the vibration source 60 and the suction source 64 so that the attractive force, the ultrasonic holding force, and the gravitational force acting on the semiconductor chip 100 are balanced when the semiconductor chip 100 is in a state of floating from the holding surface 48.

[0033] By the way, as described above, when the ultrasonic squeezing effect occurs, the semiconductor chip 100 tries to be positioned within the vibration plane. Therefore, if the holding surface 48 has substantially the same shape as the semiconductor chip 100, due to the ultrasonic squeezing effect, the semiconductor chip 100 automatically moves in the surface direction so that its entire body is positioned within the vibration plane (i.e., within the area inside the outer shape of the holding surface 48). That is, self-alignment of the semiconductor chip 100 in the surface direction becomes possible.

[0034] However, the holding force in the plane direction due to such ultrasonic squeezing effect is not very large. Therefore, depending on the magnitudes of the gravitational force and inertial force acting on the semiconductor chip 100, it may not be possible to position the semiconductor chip 100 in the plane direction with sufficient accuracy. Thus, in this example, in order to further improve the positioning accuracy of the semiconductor chip 100 in the plane direction, the holding surface 48 is made larger than the semiconductor chip 100, and an air flow forming groove 54 and a positioning recess 56 are formed in the holding surface 48. The groove 54 and the recess 56 will be described below.

[0035] As shown in FIG. 3, a suction hole 50, an air flow forming groove 54, and a positioning recess 56 are formed in the holding surface 48. The positioning recess 56 has substantially the same shape as the outer shape of the semiconductor chip 100. In the case of this example, since the semiconductor chip 100 is a square with a side length of approximately L1, the shape of the inner peripheral edge of the positioning recess 56 is also a square with a side length of approximately L1. At least a part of the positioning recess 56 is a recess that is sufficiently shallower than the thickness of the holding plate 46, and the rest of the positioning recess 56 is a hole that penetrates the holding plate 46 in the thickness direction.

[0036] The operation of such a positioning recess 56 will be described with reference to FIG. 4. FIG. 4 is an image diagram showing the operation of the positioning recess 56. Note that in FIG. 4, the illustration of the air flow forming groove 54 is omitted. When the positioning recess 56 is formed, the positioning accuracy of the semiconductor chip 100 in the plane direction is improved as compared with the case where it is not formed. The principle by which such an effect is obtained is presumed to be that the amplitude of the ultrasonic vibration changes abruptly with the positioning recess 56 as a boundary.

[0037] When the positioning recess 56 is formed, the strength of the holding surface 48 locally decreases at the location where the positioning recess 56 is formed. When ultrasonic vibration is applied to such a holding surface 48, the outer portion of the positioning recess 56 is more likely to swing with the positioning recess 56 as a fulcrum. As a result, the vibration amplitude of the outer portion becomes larger abruptly compared with the inner portion of the positioning recess 56, and the ultrasonic holding force changes abruptly with the positioning recess 56 as a boundary.

[0038] Therefore, as shown in FIG. 4, when one end of the semiconductor chip 100 in the plane direction is located outside the plane direction beyond the positioning recess 56, the balance of the ultrasonic holding force acting on the semiconductor chip 100 is significantly disrupted. To eliminate such an unbalanced state, the semiconductor chip 100 automatically moves inside the positioning recess 56. As a result, the accuracy of the self-alignment of the semiconductor chip 100 can be improved when there is the positioning recess 56 compared to when there is no positioning recess 56.

[0039] Next, the airflow forming groove 54 will be described. As described above, a suction hole 50 is formed at the center of the holding surface 48, and this suction hole 50 communicates with the suction source 64. The operation of this airflow forming groove 54 will be described with reference to FIG. 5. FIG. 5 is an image diagram showing the operation of the airflow forming groove 54. Note that in FIG. 5, the illustration of the positioning recess 56 is omitted.

[0040] When the airflow forming groove 54 is formed, the positioning accuracy of the semiconductor chip 100 in the plane direction is improved compared to when it is not formed. The principle by which such an effect is obtained is presumably that by forming the airflow forming groove 54, the airflow in the plane direction flowing between the semiconductor chip 100 and the holding surface 48 speeds up and becomes stable.

[0041] That is, when the suction force by the suction source 64 is generated while the semiconductor chip 100 is levitated by the ultrasonic squeeze effect, an airflow in the plane direction and toward the center is generated in the gap between the semiconductor chip 100 and the holding surface 48. Here, when there is no airflow forming groove 54, the airflow in the plane direction toward the center is affected by fluid viscosity, has a low speed, and is likely to become unstable. Also, the suction force acts locally only in the vicinity of the suction hole 50. In this case, even if there is a displacement of the semiconductor chip 100 in the plane direction, it is difficult for the semiconductor chip 100 to move in the plane direction and it is difficult to self-correct the displacement.

[0042] On the one hand, as shown in FIG. 5, when the airflow forming groove 54 is formed, in the vicinity of the airflow forming groove 54, the thickness of the gap between the semiconductor chip 100 and the holding surface 48 increases, and the influence of the fluid viscosity acting on the entire airflow decreases. As a result, the velocity of the airflow in the plane direction increases, and the airflow in the plane direction becomes stable. In particular, the airflow in the vicinity of the outer periphery of the semiconductor chip 100 (near region A in FIG. 5) can be made significantly more stable compared to the case where there is no airflow forming groove 54. Such a stable airflow in the plane direction applies a force to the semiconductor chip 100 such that the center of the semiconductor chip 100 approaches the suction hole 50 (and thus the center of the holding surface 48). Thereby, the semiconductor chip 100 is automatically positioned with respect to the holding surface 48. Further, by forming the airflow forming groove 54, the peak of the suction force generated near the suction hole 50 can be reduced, and the suction force can be dispersed in the plane direction. As a result, the semiconductor chip 100 becomes more likely to move in the plane direction and is more likely to self-correct the positional deviation in the plane direction.

[0043] As is clear from the above description, according to this example, automatic positioning of the semiconductor chip 100, so-called self-alignment, becomes possible. Thereby, the positioning accuracy when bonding the semiconductor chip 100 to the substrate 110 can be further improved.

[0044] By the way, in recent years, the miniaturization of semiconductor devices has advanced, and in the positioning of the semiconductor chip 100 with respect to the substrate 110, the required accuracy has been increasing. Therefore, in order to meet the required positioning accuracy, the position and angle of the semiconductor chip 100 with respect to the bonding tool 42 are detected, and according to the detection result, the movement amount of the bonding tool 42 is corrected. By applying such position correction, the positioning accuracy of the semiconductor chip 100 with respect to the substrate 110 can be improved to some extent. However, when the amount of misalignment of the semiconductor chip 100 with respect to the bonding tool 42 is large, it is difficult to quickly perform the positioning correction of the bonding tool 42 with high accuracy. For example, consider a case where a positioning accuracy of 0.1 μm is required, but a misalignment of 100 μm occurs at the initial stage. In this case, it is difficult to meet the required accuracy with a single correction, and usually, after performing position correction with low accuracy, it is necessary to perform position correction with high accuracy, which takes time to meet the required accuracy. On the other hand, if the amount of misalignment at the initial stage is about 1 μm, high-precision position correction can be performed from the beginning, so high accuracy can be achieved with a short-time process.

[0045] Therefore, when the semiconductor chip 100 is transferred from the pickup collet 18 to the bonding tool 42, it is desirable that the position of the semiconductor chip 100 with respect to the bonding tool 42 is accurate. However, in the case of the conventional bonding tool 42, it was difficult to receive the semiconductor chip 100 at an appropriate position and angle.

[0046] Here, as described above, the bonding tool 42 of this example has a self-alignment function. Therefore, even if the position of the semiconductor chip 100 with respect to the holding surface 48 is not appropriate immediately after receiving the chip, the semiconductor chip 100 automatically moves to the ideal position by the self-alignment function described above. As a result, the amount of misalignment of the semiconductor chip 100 with respect to the bonding tool 42, and thus the movement correction amount of the bonding tool 42, can be kept small. And by reducing the correction amount, it becomes possible to perform more precise positioning in a short time.

[0047] Next, the bonding process by such a bonding tool 42 will be described. The bonding tool 42 descends toward the substrate 110 while holding the semiconductor chip 100, and bonds the semiconductor chip 100 to the substrate 110. In this example, as the descending operation mode of this bonding tool 42, a first mode and a second mode can be selected. FIG. 6 is a schematic diagram showing the state of the first mode, and FIG. 7 is a schematic diagram showing the state of the second mode.

[0048] As shown in FIG. 6, when the first mode is selected, the controller 70 grounds the semiconductor chip 100 to the substrate 110 while keeping the semiconductor chip 100 separated from the holding surface 48. Then, the bonding tool 42 is lowered until the holding surface 48 contacts the semiconductor chip 100, and the semiconductor chip 100 is pressed by the bonding tool 42.

[0049] In this way, by grounding the semiconductor chip 100 while the semiconductor chip 100 is separated from the holding surface 48, the stress acting on the semiconductor chip 100 in the process until the pressing starts can be made almost zero. As a result, chipping and deformation of the semiconductor chip 100 can be effectively prevented.

[0050] Note that, in the case of the first mode, the grounding of the semiconductor chip 100 may be detected by a change in the back pressure of the suction path 52. That is, when the semiconductor chip 100 is grounded, although slightly, the gap between the semiconductor chip 100 and the holding surface 48 narrows. And, due to the narrowing of such a gap, the pressure in the suction path 52 decreases. Therefore, a pressure sensor 65 (see FIG. 2) for detecting the pressure in the suction path 52 may be provided, and the timing of the sudden change in pressure may be specified as the grounding timing.

[0051] After the ground connection is detected, the controller 70 may continue to apply ultrasonic vibration to the holding surface 48. When the application of ultrasonic vibration is continuously applied, the squeeze film Sf between the holding surface 48 and the semiconductor chip 100 functions like a damper. And thereby, the impact when the holding surface 48 abuts against the semiconductor chip 100 can be mitigated, and the breakage of the semiconductor chip 100 can be effectively prevented. Also, at the timing when the ground connection is detected, the controller 70 may cancel the application of negative pressure to the suction hole 50 by the suction source 64. With such a configuration, it is effectively prevented that the semiconductor chip 100 once grounded to the substrate 110 floats up due to the suction force and collides with the holding surface 48.

[0052] Next, the second mode will be described. As shown in FIG. 7, when the second mode is selected, the controller 70 stops the vibration source 60 prior to grounding the semiconductor chip 100 and brings the semiconductor chip 100 into contact with the holding surface 48. Then, with the semiconductor chip 100 in contact with the holding surface 48, the semiconductor chip 100 is grounded to the substrate 110. In this case, the controller 70 detects the grounding of the semiconductor chip 100 based on the reaction force acting on the bonding tool 42. After the ground connection is detected, the controller 70 presses the semiconductor chip 100 with the bonding tool 42.

[0053] Such a second mode becomes effective, for example, when the semiconductor chip 100 is bent as shown in FIG. 7. By bringing the bent semiconductor chip 100 into contact with the holding surface 48 prior to grounding, the bend is corrected. And when the semiconductor chip 100 becomes flat, the semiconductor chip 100 can be properly grounded to the substrate 110.

[0054] These first and second modes may be selected by the user. Also, the controller 70 may alternatively select the first mode and the second mode according to the state of the semiconductor chip 100. For example, an inspection device 66 for detecting the state (e.g., amount of deflection, etc.) of the semiconductor chip 100 held by the bonding tool 42 may be provided in the manufacturing apparatus 10, and the first mode and the second mode may be switched according to the detection result. The inspection device 66 may include, for example, one or more cameras for imaging the semiconductor chip 100, and may detect the state of the semiconductor chip 100 based on the captured image. Also, in another form, the inspection device 66 may include a shape sensor that uses a laser or infrared rays.

[0055] Also, all of the configurations described so far are merely examples, and other configurations may be appropriately changed as long as the configuration according to claim 1 is provided. For example, if the airflow forming groove 54 is connected to the suction hole 50, it may have another shape. Also, the airflow forming groove 54 may be omitted. Also, not only the bonding tool 42 but also the pickup collet 18 may hold the semiconductor chip 100 in a non-contact manner. That is, the pickup collet 18 may have a vibration source that applies ultrasonic vibration to the end face of the pickup collet 18 and a suction source that applies negative pressure to the end face, similar to the bonding head 40. With such a configuration, contamination and breakage of the semiconductor chip 100 can be more effectively prevented.

Description of Reference Numerals

[0056] 10 Manufacturing apparatus, 12 Chip supply source, 14 Pickup unit, 16 Dicing tape, 18 Pickup collet, 20 Pushing pin, 30 Bonding unit, 32 Stage, 40 Bonding head, 42 Bonding tool, 46 Holding plate, 48 Holding surface, 50 Suction hole, 52 Suction path, 54 Airflow forming groove, 56 Positioning recess, 60 Vibration source, 62 Ultrasonic vibration element, 63 AC power supply, 64 Suction source, 65 Pressure sensor, 66 Inspection device, 68 Camera, 70 Controller, 72 Processor, 74 Memory, 100 Semiconductor chip, 110 Substrate.

Claims

1. A stage on which a substrate is placed, a bonding head for bonding a chip to the substrate, a controller, and comprising, the bonding head a bonding tool for holding the chip in a non-contact manner, a suction source for applying a negative pressure to the holding surface of the bonding tool to suck the chip, a vibration source for applying ultrasonic vibration to the holding surface to restrict the movement of the chip with respect to the holding surface, and comprising, the controller is configured to ground the chip in a state where the chip is separated from the holding surface. A manufacturing apparatus for a semiconductor device, characterized by this.

2. A manufacturing apparatus for a semiconductor device according to Claim 1, further comprising a pressure sensor for detecting the pressure in the suction path as a suction pressure, the controller detects the grounding of the chip based on a change in the suction pressure. A manufacturing apparatus for a semiconductor device, characterized by this.

3. A manufacturing apparatus for a semiconductor device according to Claim 1 or 2, the controller stops the suction by the suction source at the timing when the grounding is detected. A manufacturing apparatus for a semiconductor device, characterized by this.

4. A manufacturing apparatus for a semiconductor device according to Claim 1, the controller is configured to alternatively select a first mode and a second mode, the controller in the first mode, grounds the chip in a state where the chip is separated from the holding surface, in the second mode, horizontally moves the chip together with the bonding tool in a state where the chip is separated from the holding surface, and grounds the chip by lowering the chip together with the tool in a state where the chip is in contact with the holding surface. It is configured as such. A manufacturing apparatus for a semiconductor device, characterized by this.

5. A manufacturing apparatus for a semiconductor device according to Claim 1, further comprising a pickup collet for picking up the chip from a chip supply source, the bonding tool receives the chip from the pickup collet in a non-contact manner. A manufacturing apparatus for a semiconductor device, characterized by this.

6. A manufacturing apparatus for a semiconductor device according to Claim 5, the pickup collet holds the chip in a non-contact manner. A manufacturing apparatus for a semiconductor device, characterized by this.

7. A manufacturing apparatus for a semiconductor device according to Claim 1, The outer size of the holding surface is larger than the outer size of the chip, On the holding surface, a positioning recess having a shape along at least a part of the outer shape of the chip is formed. A manufacturing apparatus for a semiconductor device, characterized by the above.

8. A method for manufacturing a semiconductor device, comprising: While the bonding tool holds the chip in a non-contact state, moving the chip together with the bonding tool, and bonding the chip to a substrate placed on a stage; When the bonding tool holds the chip in a non-contact state, applying a negative pressure to the holding surface of the bonding tool and applying ultrasonic vibration to the holding surface to form a squeeze film between the holding surface and the chip; Grounding the chip in a state where the chip is separated from the holding surface. A method for manufacturing a semiconductor device, characterized by the above.

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