High-frequency module and communication device

Abstract

To provide a high-frequency module that is miniaturized by its mounting board being miniaturized.SOLUTION: A high-frequency module 1 includes a mounting board, a first component 6, and a shielding member 3. The mounting board has a first main surface 21 and a second main surface. The first component 6 is disposed on the first main surface 21 of the mounting board. The shielding member 3 is disposed on the first main surface 21 of the mounting board. The first component 6 and the shielding member 3 are in contact with each other.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a high-frequency module and a communication device, and particularly to a high-frequency module including a shielding member and a communication device including the high-frequency module.

Background Art

[0002] Patent Document 1 discloses a high-frequency module having a transmission path and a reception path. The high-frequency module of Patent Document 1 includes a metal shielding layer (shielding member) on the main surface of a module substrate (mounting substrate). In the high-frequency module of Patent Document 1, a metal shielding layer is disposed between an inductor included in the transmission path and an inductor included in the reception path.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the high-frequency module of Patent Document 1, the high-frequency module may be enlarged due to the enlargement of the module substrate.

[0005] An object of the present invention is to provide a high-frequency module miniaturized by miniaturizing a mounting substrate and a communication device including the high-frequency module.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present invention includes a substrate, a first component, and a shield member. The mounting substrate has a first main surface and a second main surface. The first component is disposed on the first main surface of the mounting substrate. The shield member is disposed on the first main surface of the mounting substrate. The first component and the shield member are in contact with each other.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module.

Effects of the Invention

[0008] According to the high-frequency module and the communication device according to the above aspect, it is possible to miniaturize the high-frequency module.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

MODE FOR CARRYING OUT THE INVENTION

[0010] Hereinafter, the high-frequency module and the communication device according to the embodiment will be described with reference to the drawings. Each drawing referred to in the following embodiments is a schematic drawing, and the ratio of the size and thickness of each component in the drawing does not necessarily reflect the actual dimensional ratio.

[0011] (Embodiment 1) (1) High-frequency module As shown in FIG. 4, for example, the high-frequency module 1 is used in the communication device 100. The communication device 100 is, for example, a mobile phone such as a smartphone. Note that the communication device 100 is not limited to being a mobile phone, and may be, for example, a wearable terminal such as a smartwatch. The high-frequency module 1 is, for example, a high-frequency module capable of supporting 4G (Fourth Generation Mobile Communication) standards, 5G (Fifth Generation Mobile Communication) standards, etc. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is, for example, capable of supporting carrier aggregation and dual connectivity.

[0012] (2) Circuit configuration of the high-frequency module Hereinafter, the circuit configuration of the high-frequency module 1 according to Embodiment 1 will be described with reference to FIG. 4.

[0013] As shown in FIG. 4, the high-frequency module 1 according to Embodiment 1 includes a plurality of external connection terminals 10, a switch 110, a first matching circuit 121, a second matching circuit 122, a transmission filter 131, a reception filter 132, a third matching circuit 141, a fourth matching circuit 142, a power amplifier 151, and a low-noise amplifier 152. The plurality of external connection terminals 10 include an antenna terminal 11, a signal output terminal 12, and a signal input terminal 13. Among the high-frequency module 1, the first matching circuit 121, the transmission filter 131, the third matching circuit 141, and the power amplifier 151 are included in the transmission path. Among the high-frequency module 1, the second matching circuit 122, the reception filter 132, the fourth matching circuit 142, and the low-noise amplifier 152 are included in the reception path.

[0014] (2.1) Power Amplifier The power amplifier 151 is an amplifier that amplifies a transmission signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via the signal output terminal 12. The output terminal of the power amplifier 151 is connected to the transmission filter 131 via the third matching circuit 141.

[0015] (2.2) Transmission Filter The transmission filter 131 is a filter that allows a transmission signal to pass through. The transmission filter 131 is, for example, an acoustic wave filter including a plurality of series-arm resonators and a plurality of parallel-arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves. The transmission filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmission filter 131 is connected to the output terminal of the power amplifier 151 via the third matching circuit 141. The output terminal of the transmission filter 131 is connected to the switch 110 via the first matching circuit 121.

[0016] (2.3) Low-Noise Amplifier The low-noise amplifier 152 is an amplifier that amplifies the received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the signal input terminal 13. The output terminal of the low-noise amplifier 152 is connected to the receiving filter 132 via the fourth matching circuit 142.

[0017] (2.4) Receiving Filter The receiving filter 132 is a filter that passes the received signal. The receiving filter 132 is, for example, an acoustic wave filter including a plurality of series-arm resonators and a plurality of parallel-arm resonators. The acoustic wave filter is, for example, a SAW filter that utilizes surface acoustic waves. The receiving filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the receiving filter 132 is connected to the switch 110 via the second matching circuit 122. The output terminal of the receiving filter 132 is connected to the output terminal of the low-noise amplifier 152 via the fourth matching circuit 142.

[0018] (2.5) Switch The switch 110 switches the filter connected to the antenna terminal 11 from among the transmitting filter 131 and the receiving filter 132. That is, the switch 110 is a switch for connecting either the receiving path or the transmitting path to the antenna terminal 11. The switch 110 has a common terminal 111 and a plurality (two in the illustrated example) of selection terminals 112, 113. The common terminal 111 is connected to the antenna terminal 11. The selection terminal 112 is connected to the transmitting filter 131 via the first matching circuit 121. The selection terminal 113 is connected to the receiving filter 132 via the second matching circuit 122.

[0019] (2.6) Matching Circuit The first matching circuit 121 is a circuit for impedance matching between the output terminal of the transmitting filter 131 and the selection terminal 112 of the switch 110. The first matching circuit 121 includes at least one of one or more capacitors and one or more inductors.

[0020] The second matching circuit 122 is a circuit for impedance matching between the selection terminal 113 of the switch 110 and the input terminal of the receiving filter 132. The second matching circuit 122 includes at least one of one or more capacitors and one or more inductors.

[0021] The third matching circuit 141 is a circuit for impedance matching between the output terminal of the power amplifier 151 and the input terminal of the transmitting filter 131. The third matching circuit 141 includes at least one of one or more capacitors and one or more inductors.

[0022] The fourth matching circuit 142 is a circuit for impedance matching between the output terminal of the receiving filter 132 and the input terminal of the low-noise amplifier 152. The fourth matching circuit 142 includes at least one of one or more capacitors and one or more inductors. Further, the fourth matching circuit 142 includes a capacitor connected to the ground electrode 23.

[0023] (3) Structure of the high-frequency module Hereinafter, the structure of the high-frequency module 1 according to Embodiment 1 will be described with reference to the drawings.

[0024] The high-frequency module 1 according to Embodiment 1 includes, for example, as shown in FIG. 1, a mounting substrate 2, a shielding member 3, electronic components 41, electronic components 51, electronic components 52, and external connection terminals 10. Further, as shown in FIGS. 2 and 3, the high-frequency module 1 includes an electronic component 6.

[0025] (3.1) Mounting substrate As shown in FIG. 1, the mounting substrate 2 has a first main surface 21 and a second main surface 22. The first main surface 21 and the second main surface 22 face each other in the first direction D1.

[0026] The shielding member 3, the electronic components 41, the electronic components 51, the electronic components 52, and the electronic component 6 are arranged on the first main surface 21 of the mounting substrate 2.

[0027] External connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2.

[0028] The mounting substrate 2 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are laminated in the first direction D1. The plurality of conductive layers are formed in a predetermined pattern defined for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the first direction D1. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground electrode 23 to which a ground potential is applied. In the high-frequency module 1, a plurality of ground terminals and the ground electrode 23 are electrically connected via via conductors or the like of the mounting substrate 2. The mounting substrate 2 is, for example, a resin multilayer substrate. The mounting substrate 2 is not limited to a resin multilayer substrate, and may be, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate, a printed wiring board, or an HTCC (High Temperature Co-fired Ceramics) substrate. Further, the ground electrode 23 may be formed on the first main surface 21 of the mounting substrate 2.

[0029] Further, the mounting substrate 2 is not limited to a resin multilayer substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern defined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern defined for each layer. The conductive layer may include one or more rewiring portions. In the wiring structure, among the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface is the first main surface 21 of the mounting substrate 2, and the second surface is the second main surface 22 of the mounting substrate 2. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.

[0030] The first main surface 21 and the second main surface 22 of the mounting substrate 2 are separated in the first direction D1 and intersect the first direction D1. The first main surface 21 of the mounting substrate 2 is, for example, orthogonal to the first direction D1, but may include, for example, the side surface of the conductor part as a surface that is not orthogonal to the first direction D1. Also, the second main surface 22 of the mounting substrate 2 is, for example, orthogonal to the first direction D1, but may include, for example, the side surface of the conductor part as a surface that is not orthogonal to the first direction D1. Further, the first main surface 21 and the second main surface 22 of the mounting substrate 2 may have fine unevenness, recesses, or protrusions formed thereon.

[0031] (3.2) Shielding member As shown in FIGS. 1 to 3, the shielding member 3 is disposed on the first main surface 21 of the mounting substrate 2. As shown in FIG. 1, the shielding member 3 is disposed between the electronic component 41 and the electronic component 51. Here, "the shielding member 3 is disposed between the electronic component 41 and the electronic component 51" means that the shielding member 3 is disposed on a straight line connecting an arbitrary position on the electronic component 41 and an arbitrary position on the electronic component 51.

[0032] The shielding member 3 has conductivity. The shielding member 3 is connected to one or more (two in FIG. 2) land electrodes 24 disposed on the first main surface 21. More specifically, the shielding member 3 is connected to the two land electrodes 24 via, for example, solder. The two land electrodes 24 are connected to the ground electrode 23. Thereby, the shielding member 3 can improve the isolation between the electronic component 41 and the electronic component 51.

[0033] The shielding member 3 has, for example, one direction D2 orthogonal to the first direction D1 as the minor axis direction and the direction D3 orthogonal to the first direction D1 and the direction D2 as the major axis direction. The shielding member 3 is, for example, a metal plate having the direction D2 as the thickness direction. Note that the shielding member 3 may be L-shaped, U-shaped, or crank-shaped.

[0034] (3.3) Electronic components The electronic component 41 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 41 includes elements included in the transmission path in the high-frequency module 1. The electronic component 41 is, for example, an IC chip including a power amplifier 151. The electronic component 41 corresponds to the second component of the present disclosure.

[0035] The electronic component 41 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2. The electronic component 41 is connected to the mounting substrate 2 by, for example, a plurality of conductive bumps. The material of the conductive bumps is, for example, solder, gold, or copper.

[0036] The electronic component 51 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 51 includes elements included in the reception path in the high-frequency module 1. The electronic component 51 is, for example, an IC chip including a low-noise amplifier 152. The electronic component 51 corresponds to the third component of the present disclosure.

[0037] The electronic component 51 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2. The electronic component 51 is connected to the mounting substrate 2 by, for example, a plurality of conductive bumps. The material of the conductive bumps is, for example, solder, gold, or copper.

[0038] The electronic component 52 is disposed on the first main surface 21 of the mounting substrate 2. The distance between the electronic component 52 and the electronic component 41 is longer than the distance between the electronic component 51 and the electronic component 41. The electronic component 52 is, for example, an IC chip including a switch 110.

[0039] The electronic component 52 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2. The electronic component 52 is connected to the mounting substrate 2 by, for example, a plurality of conductive bumps. The material of the conductive bumps is, for example, solder, gold, or copper.

[0040] The electronic component 6 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 6 includes an element included in the reception path in the high-frequency module 1 and is connected to the ground electrode 23. The electronic component 6 is, for example, a capacitor included in the fourth matching circuit 142.

[0041] The electronic component 6 is disposed in contact with the shield member 3. The electronic component 6 corresponds to the first component of the present disclosure. Here, "the electronic component 6 is disposed in contact with the shield member 3" includes not only the case where the electronic component 6 and the shield member 3 are in direct contact but also the case where they are in contact via solder or the like. Thereby, it becomes possible to reduce the mounting area of the electronic component 6 and the shield member 3 on the first main surface 21 of the mounting substrate 2, and it becomes possible to reduce the area of the mounting substrate 2.

[0042] The electronic component 6 is, for example, a chip capacitor and has a first electrode 61 and a second electrode 62. The shield member 3 is in contact with the first electrode 61 of the electronic component 6. The first electrode 61 is connected to the land electrode 24 of the mounting substrate 2 by solder. That is, the first electrode 61 is connected to the mounting substrate 2. Thereby, the first electrode 61 of the electronic component 6 is connected to the ground electrode 23 directly and via the shield member 3. Therefore, the potential difference between the first electrode 61 of the electronic component 6 and the shield member 3 is eliminated, generation of parasitic capacitance is reduced, and the connectivity between the first electrode 61 of the electronic component 6 and the ground electrode 23 can be improved. The second electrode 62 is connected to the land electrode 25 disposed on the first main surface 21 of the mounting substrate 2 by solder.

[0043] (3.4) External connection terminals The plurality of external connection terminals 10 are terminals for electrically connecting the mounting substrate 2 and an external substrate.

[0044] As shown in FIG. 1, the plurality of external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2. "The external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2" includes that the external connection terminals 10 are mechanically connected to the second main surface 22 of the mounting substrate 2 and that the external connection terminals 10 are electrically connected to the mounting substrate 2 (appropriate conductor portion thereof). The material of the plurality of external connection terminals 10 is, for example, a metal (for example, copper, copper alloy, etc.). Each of the plurality of external connection terminals 10 is a columnar electrode. The columnar electrode is joined to the conductor portion of the mounting substrate 2 by, for example, solder, but is not limited thereto, and may be joined using, for example, a conductive adhesive (for example, conductive paste), or may be directly joined.

[0045] (4) Communication device As shown in FIG. 4, the communication device 100 includes a high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0046] The antenna 16 is connected to the antenna terminal 11 of the high-frequency module 1. The antenna 16 has a transmission function of radiating the transmission signal output from the high-frequency module 1 as radio waves and a reception function of receiving the reception signal as radio waves from the outside and outputting it to the high-frequency module 1.

[0047] The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes the signal passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes the transmission signal and the reception signal.

[0048] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit). The RF signal processing circuit 171 performs signal processing on high-frequency signals.

[0049] The RF signal processing circuit 171 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 172, and outputs the transmission signal subjected to the signal processing to the high-frequency module 1. Further, the RF signal processing circuit 171 performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the reception signal subjected to the signal processing to the baseband signal processing circuit 172.

[0050] The baseband signal processing circuit 172 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 172 performs predetermined signal processing on the transmission signal from the outside of the signal processing circuit 17. The reception signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as an audio signal for a call.

[0051] Further, the RF signal processing circuit 171 also has a function as a control unit that controls the connection of the switch 110 included in the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signal, reception signal). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 by a control signal (not shown). Note that the control unit may be provided outside the RF signal processing circuit 171, and may be provided, for example, in the high-frequency module 1 or the baseband signal processing circuit 172.

[0052] (5) Effects The high-frequency module 1 according to Embodiment 1 includes a mounting substrate 2, an electronic component 6, and a shield member 3. The mounting substrate 2 has a first main surface 21 and a second main surface 22. The electronic component 6 is disposed on the first main surface 21 of the mounting substrate 2. The shield member 3 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 6 and the shield member 3 are in contact with each other. Thus, in the high-frequency module 1 according to Embodiment 1, since the electronic component 6 and the shield member 3 can be disposed close to each other in a plan view from the first direction D1, the area of the mounting substrate 2 can be reduced. Therefore, the high-frequency module 1 can be miniaturized.

[0053] Further, in the high-frequency module 1 according to Embodiment 1, the electronic component 6 has a first electrode 61 connected to the mounting substrate 2. The shield member 3 is in contact with the first electrode 61 of the electronic component 6. Thus, in the high-frequency module 1 according to Embodiment 1, it is possible to reduce the characteristic degradation of the high-frequency module due to the generation of a parasitic capacitance between the electronic component 6 and the shield member 3.

[0054] Further, in the high-frequency module 1 according to Embodiment 1, the mounting substrate 2 has a ground electrode 23. The first electrode 61 of the electronic component 6 is connected to the ground electrode 23. The shield member 3 is in contact with a land electrode 24 of the mounting substrate 2 connected to the ground electrode 23. Thus, in the high-frequency module 1 according to Embodiment 1, it is possible to connect the first electrode 61 of the electronic component 6 to the ground electrode 23 via the shield member 3. Therefore, the connectivity between the first electrode 61 of the electronic component 6 and the ground electrode 23 is improved.

[0055] Further, the high-frequency module 1 according to Embodiment 1 includes an electronic component 41 and an electronic component 51 disposed on the first main surface 21 of the mounting substrate 2. A shield member 3 is disposed between the electronic component 41 and the electronic component 51. At least one of the electronic component 41 and the electronic component 51 is a power amplifier 151 that amplifies a transmission signal. Thus, in the high-frequency module 1 according to Embodiment 1, the isolation between the electronic component 41 and the electronic component 51 is improved.

[0056] The communication device 100 according to Embodiment 1 includes a high-frequency module 1 and a signal processing circuit 17 connected to the high-frequency module 1. Thereby, in the communication device 100 according to Embodiment 1, by miniaturizing the high-frequency module 1, it is possible to miniaturize and highly integrate the communication device 100.

[0057] (Embodiment 2) (1) Configuration As shown in FIG. 5, the high-frequency module 1a according to Embodiment 2 includes an electronic component 6a instead of the electronic component 6. In the high-frequency module 1a according to Embodiment 2, the shield member 3 and the electronic component 6a are insulated from each other.

[0058] The electronic component 6a is, for example, a capacitor included in the fourth matching circuit 142. The electronic component 6a is, for example, a capacitor connected between the input terminal of the low-noise amplifier 152 and the output terminal of the reception filter 132.

[0059] In the high-frequency module 1a according to Embodiment 2, as shown in FIGS. 5 and 6, an insulator 7 is disposed on the shield member 3. The shield member 3 and the electronic component 6a are in contact with each other via the insulator 7. Here, "the shield member 3 and the electronic component 6a are in contact with each other via the insulator 7" means that the shield member 3 and the electronic component 6a do not directly contact each other, the shield member 3 contacts the insulator 7, and the electronic component 6a contacts the insulator 7. Specifically, the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a face each other in the direction D2, and the insulator 7 is disposed between the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a.

[0060] As shown in FIGS. 5 and 6, the shield member 3 has a main surface 31 and a main surface 32 that face each other in the direction D3. The main surface 31 of the shield member 3 faces the electronic component 6. The insulator 7 is disposed on the main surface 31 of the shield member 3. The insulator 7 is, for example, an epoxy resin. The insulator 7 is formed, for example, by applying a material containing an epoxy resin to the shield member 3.

[0061] As shown in FIGS. 5 and 6, the first electrode 61a of the electronic component 6a is connected to a land electrode 26 that is different from the land electrode 24 of the mounting substrate 2. In the mounting substrate 2, the land electrode 24 and the land electrode 26 are insulated from each other. Therefore, the electronic component 6a is insulated from the shield member 3 and the ground electrode 23. The second electrode 62a of the electronic component 6a is connected to a land electrode 25 that is different from the land electrode 24 of the mounting substrate 2.

[0062] In the high-frequency module 1a according to Embodiment 2, the electronic component 6a is insulated from the ground electrode 23. Therefore, as the electronic component 6a, a component that needs to be insulated from the ground electrode 23 can be used. Thereby, in the high-frequency module 1a according to Embodiment 2, the degree of freedom in component arrangement on the first main surface 21 of the mounting substrate 2 is improved, and thus it is easy to miniaturize the high-frequency module 1a.

[0063] In the high-frequency module 1a according to Embodiment 2, the insulator 7 may be further disposed on the main surface 32 of the shield member 3.

[0064] (2) Effects In the high-frequency module 1a according to Embodiment 2, the shield member 3 has a main surface 31 that faces the electronic component 6a. The insulator 7 is disposed on the main surface 31 of the shield member 3. Thereby, in the high-frequency module 1a according to Embodiment 2, the electronic component 6a and the shield member 3 can be insulated from each other, so that it is easy to dispose the electronic component 6a in contact with the shield member 3. Therefore, it is easy to miniaturize the high-frequency module 1a.

[0065] (Embodiment 3) As shown in Fig. 7, the high-frequency module 1b according to Embodiment 3 includes an electronic component 6b instead of the electronic component 6. In the high-frequency module 1b according to Embodiment 3, the shield member 3 and the electronic component 6b are insulated from each other.

[0066] The electronic component 6b is an LGA (Land Grid Array) element having connection terminals on the main surface 63b facing the first main surface 21 of the mounting substrate 2. The electronic component 6b has a plurality of electrodes 64b on the main surface 63b. That is, as shown in Fig. 7, the plurality of electrodes 64b of the electronic component 6b do not contact the shield member 3. Therefore, the electronic component 6b is insulated from the shield member 3 and the ground electrode 23. The electronic component 6b is, for example, a reception filter 132.

[0067] In the high-frequency module 1b according to Embodiment 3, the electronic component 6b is insulated from the ground electrode 23. Therefore, in the high-frequency module 1b according to Embodiment 3, it is possible to bring the electronic component 6b not connected to the ground electrode 23 into contact with the shield member 3. As a result, in the high-frequency module 1b according to Embodiment 3, the degree of freedom in component arrangement on the first main surface 21 of the mounting substrate 2 is improved, and thus, similar to the high-frequency module 1 according to Embodiment 1, it is easy to miniaturize the high-frequency module 1b.

[0068] (Embodiment 4) (1) Configuration The high-frequency module 1c according to Embodiment 4 includes a resin layer 8 and an external shield electrode 9 in addition to the configuration of the high-frequency module 1 according to Embodiment 1.

[0069] (1.1) Resin layer

[0070] As shown in Fig. 8, the resin layer 8 is disposed on the first main surface 21 of the mounting substrate 2. The resin layer 8 covers the electronic component 6. Further, as shown in Fig. 8, the resin layer 8 covers each of the electronic components 41, 51, and 52. The resin layer 8 contains, for example, an epoxy resin and a filler.

[0071] (1.2) External shield electrode The external shield electrode 9 covers the first main surface 21 of the mounting substrate 2. More specifically, the external shield electrode 9 covers the resin layer 8. In the high-frequency module 1c, the external shield electrode 9 is a shield electrode provided for the purpose of electromagnetic shielding inside and outside the high-frequency module 1c. The external shield electrode 9 has a multilayer structure in which a plurality of metal layers are laminated, but it is not limited to the multilayer structure and may be a single metal layer. The single metal layer contains one or more kinds of metals. The external shield electrode 9 covers the main surface 81 on the side opposite to the mounting substrate 2 side in the resin layer 8, the outer peripheral surface 82 of the resin layer 8, and the outer peripheral surface 29 of the mounting substrate 2.

[0072] The external shield electrode 9 is in contact with the shield member 3. More specifically, the external shield electrode 9 has a recess 91 facing the first main surface 21 of the mounting substrate 2. The external shield electrode 9 has a convex portion 92 that overlaps the recess 91 in a plan view from the first direction D1. One end 33 of the two ends of the shield member 3 in the first direction D1 that does not contact the mounting substrate 2 is disposed in the recess 91 of the external shield electrode 9. That is, the shield member 3 is in contact with the recess 91 of the external shield electrode 9. As a result, since the contact area between the external shield electrode 9 and the shield member 3 is increased, the external shield electrode 9 and the ground electrode 23 are electrically connected via the shield member 3. Therefore, the electromagnetic shielding effect of the external shield electrode 9 is improved.

[0073] (2) Effect The high-frequency module 1c according to Embodiment 4 includes an external shield electrode 9 that covers the first main surface 21 of the mounting substrate 2. The mounting substrate 2 has a ground electrode 23 connected to the shield member 3. The shield member 3 is in contact with the external shield electrode 9. Thereby, in the high-frequency module 1c according to Embodiment 4, it becomes possible to connect the external shield electrode 9 to the ground electrode 23 via the shield member 3. Therefore, the noise resistance of the high-frequency module 1c is improved.

[0074] In addition, in the high-frequency module 1c according to Embodiment 4, the external shield electrode 9 has a recess 91 facing the first main surface 21 of the mounting substrate 2. The shield member 3 is in contact with the recess 91 of the external shield electrode 9. Thus, in the high-frequency module 1c according to Embodiment 4, since the contact area between the shield member 3 and the external shield electrode 9 is large, the shielding property of the external shield electrode 9 is improved.

[0075] (Embodiment 5) (1) Configuration The high-frequency module 1c according to Embodiment 5 includes a resin layer 8 and an external shield electrode 9, similar to the high-frequency module 1c according to Embodiment 4. Further, the high-frequency module 1c according to Embodiment 5 includes an insulator 7, similar to the high-frequency module 1a according to Embodiment 2.

[0076] The material of the insulator 7 is different from the material of the resin layer 8. For example, the resin layer 8 contains a filler, and the insulator 7 does not contain a filler. Also, for example, the resin material of the resin layer 8 other than the filler and the resin material of the insulator 7 are different resins from each other.

[0077] In the high-frequency module 1c according to Embodiment 5, similar to the high-frequency module 1a according to Embodiment 2, the shield member 3 and the electronic component 6 are in contact with each other via the insulator 7. The resin layer 8 covers the electronic component 6 and the insulator 7. Specifically, the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a face each other in the direction D2, and the insulator 7 is disposed between the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a. The resin layer 8 does not exist between the main surface 31 of the shield member 3 and the first electrode 61a of the electronic component 6a.

[0078] (2) Effects In the high-frequency module 1c according to Embodiment 5, a resin layer 8 covering the mounting substrate 2 and the electronic component 6a is further provided. The material of the insulator 7 is different from the material of the resin layer 8. At least a part of the insulator 7 is located between the shield member 3 and the electronic component 6a. Thus, in the high-frequency module 1c according to Embodiment 5, the electronic component 6a can be protected by the resin layer 8, and the insulation between the electronic component 6a and the shield member 3 can be enhanced by the insulator 7.

[0079] (Embodiment 6) (1) Configuration In the high-frequency module 1c according to Embodiment 6, the height H1 in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the shield member 3 is higher than that of any of the other electronic components arranged on the first main surface 21 of the mounting substrate 2.

[0080] Specifically, as shown in FIG. 9, for example, the height H1 in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the shield member 3 is larger than the height H2 in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the electronic component 41. The "height H1 in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the shield member 3" refers to the distance in the first direction D1 between the first main surface 21 of the mounting substrate 2 and one end 33 of the shield member 3 in the first direction D1 that does not contact the mounting substrate 2. Further, the "height H2 in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the electronic component 41" refers to the distance in the first direction D1 between the first main surface 21 of the mounting substrate 2 and the main surface on the side opposite to the main surface facing the first main surface 21 among the plurality of main surfaces of the electronic component 41. Here, the height H2 in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the electronic component 41 is equal to or higher than the height in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the electronic component 51, and is equal to or higher than the height in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the electronic component 52. That is, the height H1 in the first direction D1 from the first main surface 21 of the mounting substrate 2 of the shield member 3 is higher than the height in the first direction D1 from the first main surface 21 of the mounting substrate 2 of any component arranged on the first main surface 21 of the mounting substrate 2. Therefore, the isolation effect between the electronic component 41 and the electronic component 51 by the shield member 3 is improved.

[0081] In the high-frequency module 1c according to Embodiment 6, the external shield electrode 9 has a recess 91 on the surface facing the first main surface 21 of the mounting substrate 2. One end 33 that does not contact the mounting substrate 2 among the two ends of the shield member 3 in the first direction D1 is disposed in the recess 91 of the external shield electrode 9. Thereby, since the adhesion between the external shield electrode 9 and the shield member 3 is improved, the external shield electrode 9 and the ground electrode 23 are electrically connected via the shield member 3. Therefore, the electromagnetic shielding effect of the external shield electrode 9 is improved.

[0082] (2) Effect In the high-frequency module 1c according to Embodiment 6, the height H1 of the shield member 3 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2 is higher than the height H2 of any component other than the shield member 3 disposed on the first main surface 21 of the mounting substrate 2 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2. Thereby, in the high-frequency module 1c according to Embodiment 6, since the adhesion between the shield member 3 and the external shield electrode 9 is improved, the shielding property of the external shield electrode 9 is improved.

[0083] (Embodiment 7) (1) Configuration In the high-frequency module 1c according to Embodiment 7, the height H1 of the shield member 3 from the mounting substrate 2 is lower than any of the heights of other electronic components disposed on the first main surface 21 of the mounting substrate 2.

[0084] Specifically, as shown in FIG. 10, for example, the height H1 of the shield member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is smaller than the height H2 of the electronic component 41 in the first direction D1 from the first main surface 21 of the mounting substrate 2. Thereby, the height H1 of the shield member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is lower than the height in the first direction D1 from the first main surface 21 of the mounting substrate 2 of any component disposed on the first main surface 21 of the mounting substrate 2.

[0085] In the high-frequency module 1c according to Embodiment 7, the external shield electrode 9 has a convex portion 93 on the surface facing the first main surface 21 of the mounting substrate 2, and the convex portion 93 includes a concave portion 91. One end 33 that does not contact the mounting substrate 2 among the two ends of the shield member 3 in the first direction D1 is disposed in the concave portion 91 of the external shield electrode 9. Therefore, it is possible to ensure isolation between the electronic component 41 and the electronic component 51 with the shield member 3 and the external shield electrode 9.

[0086] Further, in the high-frequency module 1c according to Embodiment 7, the height H1 of the shield member 3 in the first direction D1 from the first main surface 21 of the mounting substrate 2 is lower than any of the other electronic components disposed on the first main surface 21 of the mounting substrate 2. Therefore, it is possible to reduce the thickness of the high-frequency module 1c in the first direction D1. Accordingly, it is possible to miniaturize the high-frequency module 1c. Further, when manufacturing the high-frequency module 1c, it is not necessary to polish the shield member 3, and it is not necessary to change the height of the shield member 3 in accordance with the heights of the electronic components 41, 51, and 52. Therefore, it is possible to reduce the manufacturing cost of the high-frequency module 1c.

[0087] (2) Effects In the high-frequency module 1c according to Embodiment 7, the external shield electrode 9 has a convex portion 93 facing the first main surface 21 of the mounting substrate 2. The concave portion 91 of the external shield electrode 9 is located in the convex portion 93. Thereby, in the high-frequency module 1c according to Embodiment 7, the adhesion and connection reliability between the shield member 3 and the external shield electrode 9 are improved, so that the shielding property of the external shield electrode 9 is improved.

[0088] In addition, in the high-frequency module 1c according to Embodiment 7, the height H1 of the shielding member 3 in the first direction D1 with respect to the first main surface 21 of the mounting substrate 2 is lower than the height H2 of any one of the components other than the shielding member 3 arranged on the first main surface 21 of the mounting substrate 2 in the first direction D1. Thus, according to the high-frequency module 1c according to Embodiment 7, it becomes possible to make the heights of the shielding members 3 uniform among a plurality of high-frequency modules 1c having different heights of electronic components. Therefore, it becomes possible to reduce the manufacturing cost of the high-frequency module 1c.

[0089] (Embodiment 8) In the high-frequency module 1c according to Embodiment 8, similar to the high-frequency module 1c according to Embodiment 7, the height H1 of the shielding member 3 from the mounting substrate 2 is lower than that of any of the other electronic components arranged on the first main surface 21 of the mounting substrate 2.

[0090] In addition, in the high-frequency module 1c according to Embodiment 8, the thickness uniformity of the external shielding electrode 9 in the first direction D1 is high. Thus, the external shielding electrode 9 has a recess 94.

[0091] Specifically, as shown in FIG. 11, the external shielding electrode 9 has a convex portion 93 on the surface facing the first main surface 21 of the mounting substrate 2. Further, the external shielding electrode 9 has a recess 94 that overlaps the convex portion 93 in the first direction D1.

[0092] In the high-frequency module 1c according to Embodiment 8, the external shielding electrode 9 does not have a portion where the thickness in the first direction D1 is locally large. Therefore, it becomes possible to reduce the material of the external shielding electrode 9 without reducing the electromagnetic shielding effect of the external shielding electrode 9. In addition, in the high-frequency module 1c according to Embodiment 8, since the thickness uniformity of the external shielding electrode 9 in the first direction D1 is high, it becomes easy to form the external shielding electrode 9 by vacuum deposition or sputtering.

[0093] Further, in the high-frequency module 1c according to Embodiment 8, as shown in FIG. 12, the thickness of the external shield electrode 9 in the first direction D1 may be reduced.

[0094] (Modification example) Hereinafter, modification examples of the embodiments will be described.

[0095] The high-frequency module 1 according to Embodiments 1 to 8 may include a plurality of power amplifiers 151. At least one of the plurality of power amplifiers 151 is included in the electronic component 41, for example. Similarly, the high-frequency module 1 according to Embodiments 1 to 8 may include a plurality of low-noise amplifiers 152. At least one of the plurality of low-noise amplifiers 152 is included in the electronic component 51, for example.

[0096] Further, the high-frequency module 1 according to Embodiments 1 to 8 may not include the low-noise amplifier 152 and may include a plurality of power amplifiers 151. At least one of the plurality of power amplifiers 151 is included in the electronic component 41, and at least one of the other plurality of power amplifiers 151 is included in the electronic component 51. In this configuration, the high-frequency module 1, which is a transmission module, can improve the isolation between the plurality of power amplifiers 151.

[0097] Further, in the high-frequency module 1 according to Embodiments 1 to 8, the electronic component 6 may be an element other than a capacitor as long as it is an element connected to the ground electrode 23, and may be, for example, an inductor or an IC including a switch. Similarly, the electronic components 6a and 6b may be a filter, an inductor, or a capacitor as long as they are elements not connected to the ground electrode 23.

[0098] Further, in the high-frequency module 1 according to Embodiments 1 to 8, one or more electronic components may be arranged on the second main surface 22 of the mounting substrate 2.

[0099] Further, in the high-frequency module 1 according to Embodiment 2 or 5, the shield member 3 may not be connected to the ground electrode 23. Even in this case, the shield member 3 and the external shield electrode 9 exhibit an electromagnetic shielding effect.

[0100] Further, in the high-frequency module 1 according to Embodiments 4 to 8, the external shield electrode 9 may be connected to the ground electrode 23 via the outer peripheral surface 29 of the mounting substrate 2.

[0101] (Aspect) The high-frequency module (1 to 1c) according to the first aspect includes a mounting substrate (2), a first component (6 to 6b), and a shield member (3). The mounting substrate (2) has a first main surface (21) and a second main surface (22). The first component (6 to 6b) is disposed on the first main surface (21) of the mounting substrate (2). The shield member (3) is disposed on the first main surface (21) of the mounting substrate (2). The first component (6 to 6b) and the shield member (3) are in contact with each other.

[0102] According to the high-frequency module (1 to 1c) according to the above aspect, since the first component (6 to 6b) and the shield member (3) can be disposed close to each other in a plan view from the thickness direction (D1) of the mounting substrate (2), the area of the mounting substrate (2) can be reduced. Therefore, the high-frequency module (1 to 1c) can be miniaturized.

[0103] In the high-frequency module (1; 1c) according to the second aspect, in the first aspect, the first component (6) has an electrode (61) connected to the mounting substrate (2). The shield member (3) is in contact with the electrode (61) of the first component (6).

[0104] According to the high-frequency module (1; 1c) according to the above aspect, it is possible to reduce the deterioration of the characteristics of the high-frequency module due to the generation of a parasitic capacitance between the first component (6) and the shield member (3).

[0105] In the high-frequency module (1:1c) according to the third aspect, in the second aspect, the mounting substrate (2) has a ground electrode (23). The electrode (61) of the first component (6) is connected to the ground electrode (23). The shield member (3) is in contact with the electrode (24) of the mounting substrate (2) connected to the ground electrode (23).

[0106] According to the high-frequency module (1;1c) according to the above aspect, it is possible to connect the electrode (61) of the first component (6) to the ground electrode (23) via the shield member (3). Therefore, the connectivity between the electrode (61) of the first component (6) and the ground electrode (23) is improved.

[0107] In the high-frequency module (1a;1c) according to the fourth aspect, in the first aspect, the shield member (3) has a main surface (31) facing the first component (6a). An insulator (7) is disposed on the main surface (31) of the shield member (3).

[0108] According to the high-frequency module (1a;1c) according to the above aspect, since the first component (6a) and the shield member (3) can be insulated from each other, it becomes easy to dispose the first component (6a) in contact with the shield member (3). Therefore, it becomes easy to miniaturize the high-frequency module (1a;1c).

[0109] In the high-frequency module (1c) according to the fifth aspect, in the fourth aspect, it further includes a resin layer (8) covering the mounting substrate (2) and the first component (6a). The material of the insulator (7) is different from the material of the resin layer (8). At least a part of the insulator (7) is located between the shield member (3) and the first component (6a).

[0110] According to the high-frequency module (1c) according to the above aspect, the first component (6a) can be protected by the resin layer (8), and the insulation between the first component (6a) and the shield member (3) can be enhanced by the insulator (7).

[0111] The high-frequency module (1 to 1c) according to the sixth aspect further includes a second component (41) and a third component (51) disposed on the first main surface (21) of the mounting substrate (2) in any one of the first to fifth aspects. A shield member (3) is disposed between the second component (41) and the third component (51). At least one of the second component (41) and the third component (51) is a power amplifier (151) that amplifies a transmission signal.

[0112] According to the high-frequency module (1 to 1c) according to the above aspect, the isolation between the second component (41) and the third component (51) is improved.

[0113] The high-frequency module (1c) according to the seventh aspect further includes an external shield electrode (9) that covers the first main surface (21) of the mounting substrate (2) in any one of the first to sixth aspects. The mounting substrate (2) has a ground electrode (23) connected to the shield member (3). The shield member (3) is in contact with the external shield electrode (9).

[0114] According to the high-frequency module (1c) according to the above aspect, it is possible to connect the external shield electrode (9) to the ground electrode (23) via the shield member (3). Therefore, the noise resistance of the high-frequency module (1c) is improved.

[0115] In the high-frequency module (1c) according to the eighth aspect, in the seventh aspect, the external shield electrode (9) has a recess (91) facing the first main surface (21) of the mounting substrate (2). The shield member (3) is in contact with the recess (91) of the external shield electrode (9).

[0116] According to the high-frequency module (1c) according to the above aspect, since the contact area between the shield member (3) and the external shield electrode (9) is large, the shielding property of the external shield electrode (9) is improved.

[0117] In the high-frequency module (1c) according to the ninth aspect, in the seventh or eighth aspect, the height (H1) in the first direction (D1) of the shield member (3) with respect to the first main surface (21) of the mounting substrate (2) is higher than the height (H2) in the first direction (D1) of any component other than the shield member (3) disposed on the first main surface (21) of the mounting substrate (2) with respect to the first main surface (21) of the mounting substrate (2). The first direction (D1) is the thickness direction of the mounting substrate (2).

[0118] According to the high-frequency module (1c) according to the above aspect, the adhesion between the shield member (3) and the external shield electrode (9) is improved, so the shielding property of the external shield electrode (9) is improved.

[0119] In the high-frequency module (1c) according to the tenth aspect, in the eighth or ninth aspect, the external shield electrode (9) has a convex portion (93) facing the first main surface (21) of the mounting substrate (2). The concave portion (91) of the external shield electrode (9) is located in the convex portion (93).

[0120] According to the high-frequency module (1c) according to the above aspect, the adhesion between the shield member (3) and the external shield electrode (9) is improved, so the shielding property of the external shield electrode (9) is improved.

[0121] In the high-frequency module (1c) according to the eleventh aspect, in the tenth aspect, the height (H1) in the first direction (D1) of the shield member (3) with respect to the first main surface (21) of the mounting substrate (2) is lower than the height (H2) in the first direction (D1) of any one component other than the shield member (3) disposed on the first main surface (21) of the mounting substrate (2) with respect to the first main surface (21) of the mounting substrate (2). The first direction (D1) is the thickness direction of the mounting substrate (2).

[0122] According to the high-frequency module (1c) according to the above aspect, it is possible to align the heights of the shield members (3) among a plurality of high-frequency modules (1c) having different heights of electronic components. Therefore, it is possible to reduce the manufacturing cost of the high-frequency module (1c).

[0123] The communication device (100) according to the 12th aspect includes the high-frequency module (1 to 1c) according to any one of the 1st to 11th aspects and a signal processing circuit (17) connected to the high-frequency module (1 to 1c).

[0124] According to the communication device (100) according to the above aspect, it is possible to reduce the size and increase the integration of the communication device (100) by reducing the size of the high-frequency module (1).

Explanation of Signs

[0125] 1, 1a, 1b, 1c High-frequency module 2 Mounting substrate 21 First main surface 22 Second main surface 23 Ground electrode 24 Land electrode 25 Land electrode 26 Land electrode 29 Outer peripheral surface 3 Shielding member 31 Main surface 32 Main surface 33 One end 6, 6a, 6b Electronic component (first component) 61 First electrode (electrode) 61a First electrode 62, 62a Second electrode 63b Main surface 64b Electrode 7 Insulator 8 Resin layer 81 Main surface 82 Outer peripheral surface 9 External shield electrode 91 Recess 92 Protrusion 93 Protrusion 94 Recess 10 External connection terminal 11 Antenna terminal 12 Signal output terminal 13 Signal input terminal 16 Antenna 17 Signal processing circuit 171 RF signal processing circuit 172 Baseband signal processing circuit 41 Electronic component (second component) 51 Electronic component (third component) 52 Electronic component 100 Communication device 110 Switch 111 Common terminal 112, 113 Selection terminals 121 First integration circuit 122 Second integration circuit 131 Transmission filter 132 Reception filter 141 Third integration circuit 142 Fourth integration circuit 151 Power amplifier 152 Low-noise amplifier D1 First direction D2 Direction D3 Direction H1 Height H2 Height

Claims

1. A mounting substrate having a first main surface and a second main surface, a first component disposed on the first main surface of the mounting substrate, and a shield member disposed on the first main surface of the mounting substrate, comprising: the first component and the shield member are in contact with each other high-frequency module.

2. The first component has an electrode connected to the mounting substrate, the shield member is in contact with the electrode of the first component, The high-frequency module according to claim 1.

3. The mounting substrate has a ground electrode, the electrode of the first component is connected to the ground electrode, the shield member is in contact with the electrode of the mounting substrate connected to the ground electrode, The high-frequency module according to claim 2.

4. The shield member has a main surface facing the first component, an insulator is disposed on the main surface of the shield member, The high-frequency module according to claim 1.

5. further comprising a resin layer covering the mounting substrate and the first component, the material of the insulator is different from the material of the resin layer, at least a part of the insulator is located between the shield member and the first component, The high-frequency module according to claim 4.

6. further comprising a second component and a third component disposed on the first main surface of the mounting substrate, the shield member is disposed between the second component and the third component, at least one of the second component and the third component is a power amplifier that amplifies a transmission signal, The high-frequency module according to claim 1.

7. further comprising an external shield electrode covering the first main surface of the mounting substrate, the mounting substrate has a ground electrode connected to the shield member, the shield member is in contact with the external shield electrode, The high-frequency module according to claim 1.

8. the external shield electrode has a recess facing the first main surface of the mounting substrate, the shield member is in contact with the recess of the external shield electrode, The high-frequency module according to claim 7.

9. The height of the shield member in the first direction, which is the thickness direction of the mounting substrate with respect to the first main surface of the mounting substrate, is higher than the height of any component other than the shield member disposed on the first main surface of the mounting substrate in the first direction with respect to the first main surface of the mounting substrate, The high-frequency module according to claim 8.

10. The external shield electrode has a convex portion facing the first main surface of the mounting substrate, and the concave portion of the external shield electrode is located in the convex portion. The high-frequency module according to claim 8.

11. The height in the first direction, which is the thickness direction of the mounting substrate of the shield member with respect to the first main surface of the mounting substrate, is lower than the height in the first direction of any one of the components other than the shield member disposed on the first main surface of the mounting substrate. The high-frequency module according to claim 10.

12. A high-frequency module according to any one of claims 1 to 11, and a signal processing circuit connected to the high-frequency module. A communication device.

Images