Method for manufacturing sensor device and sensor device

Abstract

To provide a method for manufacturing a sensor device which can form a cavity inside a substrate without using a photolithography process.SOLUTION: A method for manufacturing a sensor device (100) includes a step (S1) of preparing a substrate (10), and a step (S2) of forming a first cavity (11) inside the substrate. The step of forming the first cavity includes a step (S21) of condensing and absorbing a laser beam (L) inside the substrate, and thereby forming a plurality of second cavities (13) inside the substrate, and a step (S22) of connecting the plurality of second cavities by heat-treating the substrate, and converting the second cavities into the first cavity.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a sensor device and a sensor device.

Background Art

[0002] For example, Japanese Unexamined Patent Application Publication No. 2021-025966 (Patent Document 1) describes a MEMS (Micro Electro Mechanical System) sensor. The MEMS sensor described in Patent Document 1 has a substrate. In the method for manufacturing the MEMS sensor described in Patent Document 1, first, a first substrate is prepared. Second, the main surface of the first substrate is etched using a resist pattern formed by a photolithography process on the main surface of the first substrate as a mask, thereby forming a recess.

[0003] Third, a second substrate is attached to the main surface of the first substrate. The second substrate is an SOI (Silicon On Insulator) substrate and has a first semiconductor layer, a second semiconductor layer, and an insulating layer. The second substrate is attached so that the first semiconductor layer contacts the main surface of the first substrate. Fourth, the second semiconductor layer and the insulating layer are removed. As described above, in the MEMS sensor described in Patent Document 1, a recess defined by the recess and the first semiconductor layer is formed inside the substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

[0005] In the method using heat treatment, first, etching is performed to form a plurality of grooves on the main surface of the substrate, using the resist pattern formed by a photolithography process on the main surface of the substrate as a mask. Second, etching is performed on the inside of the substrate through the above grooves. Third, by performing heat treatment on the substrate, the above grooves are closed. Thus, also in the method using heat treatment, a photolithography process is required.

[0006] In the method using sacrificial layer etching, first, a sacrificial layer formed of, for example, silicon oxide is formed on the substrate. Second, the sacrificial layer is etched using the resist pattern formed by a photolithography process on the sacrificial layer as a mask, so that the sacrificial layer is patterned according to the shape of the cavity formed inside the substrate.

[0007] Third, by depositing the constituent material of the substrate, the sacrificial layer is encapsulated in the substrate. Fourth, etching is performed on the substrate using the resist pattern formed by a photolithography process on the substrate as a mask, so that grooves for exposing the sacrificial layer are formed. Fifth, by etching and removing the sacrificial layer through the above grooves, a cavity is formed inside the substrate. Thus, in the method using sacrificial layer etching, a plurality of photolithography processes are required.

[0008] The method for manufacturing the sensor device of the present disclosure includes a step of preparing a substrate and a step of forming a first cavity inside the substrate. The step of forming the first cavity includes a step of forming a plurality of second cavities inside the substrate by condensing and absorbing laser light inside the substrate, and a step of connecting the plurality of second cavities by performing heat treatment on the substrate to form the first cavity.

Brief Description of the Drawings

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[0010] [Detailed Description] Details of embodiments of the present disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant descriptions will not be repeated.

[0011] (First Embodiment) A sensor device according to the first embodiment will be described. The sensor device according to the first embodiment is referred to as a sensor device 100.

[0012] <Configuration of Sensor Device 100> The configuration of the sensor device 100 will be described below.

[0013] FIG. 1 is a plan view of the sensor device 100. In FIG. 1, the illustration of the protective film 40 is omitted. FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1. As shown in FIGS. 1 and 2, the sensor device 100 includes a substrate 10, an insulating film 20, pads 30, and a protective film 40. The sensor device 100 is, for example, an absolute pressure sensor.

[0014] The constituent material of the substrate 10 is, for example, single crystal silicon. The substrate 10 has a main surface 10a, a main surface 10b, and a side surface 10c. The main surface 10b is the opposite surface of the main surface 10a. The main surface 10a and the main surface 10b are end faces in the thickness direction of the substrate 10. The side surface 10c is continuous with the main surface 10a and the main surface 10b.

[0015] Inside the substrate 10, a cavity 11 is formed. The cavity 11 is, for example, rectangular in a plan view. The substrate 10 has a membrane 12. The membrane 12 is a portion of the substrate 10 between the cavity 11 and the main surface 10a. The main surface 10a has a first portion and a second portion. The first portion is the portion of the main surface 10a above the cavity 11. The second portion is the portion of the main surface 10a surrounding the first portion. The first portion and the second portion are continuously flat. On the bottom surface of the cavity 11, irregularities are formed. Also, the side surface of the cavity 11 is curved in a cross-sectional view.

[0016] Although not shown, a resistor is formed on the main surface 10a of the membrane 12, and wiring and contact regions are formed on the main surface 10a around the membrane 12. The resistor, the wiring, and the contact regions are formed by doping with impurity elements. One end portion of the wiring is electrically connected to the resistor. The other end portion of the wiring is electrically connected to the contact region. The electrical resistance value of the resistor will vary when the membrane 12 is deflected due to fluctuations such as air pressure.

[0017] The insulating film 20 is disposed on the substrate 10. More specifically, the insulating film 20 is disposed on the main surface 10a. The constituent material of the insulating film 20 is, for example, silicon oxide. The insulating film 20 has, for example, a first layer 21 and a second layer 22. The second layer 22 is disposed on the first layer 21.

[0018] The pad 30 is disposed on the insulating film 20. The constituent material of the pad 30 is, for example, a metal material such as aluminum or an aluminum alloy. The pad 30 is electrically connected to the contact region formed on the main surface 10a through the contact hole 20a formed in the insulating film 20. The protective film 40 is disposed on the insulating film 20. An opening for at least partially exposing the pad 30 is formed in the protective film 40. The constituent material of the protective film 40 is, for example, silicon nitride.

[0019] <Manufacturing method of the sensor device 100> A method for manufacturing the sensor device 100 will be described below.

[0020] FIG. 3 is a manufacturing process diagram of the sensor device 100. As shown in FIG. 3, the manufacturing method of the sensor device 100 includes a preparation step S1, a cavity formation step S2, a first insulating film formation step S3, an ion implantation step S4, a second insulating film formation step S5, a contact hole formation step S6, a pad formation step S7, and a protective film formation step S8.

[0021] In the preparation step S1, the substrate 10 is prepared. After the preparation step S1, the cavity formation step S2 is performed. In the cavity formation step S2, a cavity 11 is formed inside the substrate 10. The cavity formation step S2 includes a laser light irradiation step S21 and a heat treatment step S22 performed after the laser light irradiation step S21.

[0022] FIG. 4 is a cross-sectional view for explaining the laser light irradiation step S21. In the laser light irradiation step S21, as shown in FIG. 4, the laser light L is focused inside the substrate 10 and absorbed inside the substrate 10. Thereby, a cavity 13 is formed inside the substrate 10. By scanning the laser light L, a plurality of cavities 13 are arranged in a matrix, for example, in a plan view. The laser light L selects a wavelength with a low absorption rate with respect to the substrate 10 and adjusts the focal position so as to be focused and absorbed inside the substrate 10.

[0023] FIG. 5 is a cross-sectional view for explaining the heat treatment step S22. In the heat treatment step S22, heat treatment is performed on the substrate 10. When the heat treatment is being performed, the substrate 10 is heated to a temperature at which the atoms of the constituent material of the substrate 10 can easily flow. By performing the heat treatment, the atoms of the constituent material of the substrate 10 flow to reduce the surface energy, and a plurality of cavities 13 are connected to form the cavity 11. Since the cavity 11 is formed in this way, irregularities remain on the bottom surface of the cavity 11, and the side surface of the cavity 11 is curved in a cross-sectional view. After the heat treatment step S22 is performed, that is, after the cavity formation step S2 is performed, the first insulating film formation step S3 is performed.

[0024] FIG. 6 is a first explanatory diagram for explaining the cavity forming step S2 in the method of manufacturing the sensor device according to Comparative Example 1. When forming the cavity 11 by heat treatment, as shown in FIG. 6, first, a plurality of grooves 10d are formed in the main surface 10a by etching using a resist pattern formed by a photolithography process (a process of exposing and developing the photoresist applied on the main surface 10a) as a mask.

[0025] FIG. 7 is a second explanatory diagram for explaining the cavity forming step S2 in the method of manufacturing the sensor device according to Comparative Example 1. When forming the cavity 11 by heat treatment, as shown in FIG. 7, second, the inside of the substrate 10 is etched through the grooves 10d, whereby the cavity 11 is formed inside the substrate 10. FIG. 8 is a third explanatory diagram for explaining the cavity forming step S2 in the method of manufacturing the sensor device according to Comparative Example 1. When forming the cavity 11 by heat treatment, as shown in FIG. 8, third, heat treatment is performed on the substrate 10, whereby the atoms of the constituent material of the substrate 10 flow and the grooves 10d are blocked. As a result, when forming the cavity 11 by heat treatment, a shape of the main surface 10a in which the first portion is recessed more than the second portion is formed, and the first portion and the second portion do not continue flatly.

[0026] FIG. 9 is a first explanatory diagram for explaining the cavity forming step S2 in the method of manufacturing the sensor device according to Comparative Example 2. When forming the cavity 11 by attaching the SOI substrate, as shown in FIG. 9, first, a recess 10e is formed in the main surface 10a by etching using a resist pattern formed by a photolithography process on the main surface 10a as a mask.

[0027] FIG. 10 is a second explanatory diagram for explaining the cavity forming step S2 in the method of manufacturing the sensor device according to Comparative Example 2. When forming the cavity 11 by attaching the SOI substrate, as shown in FIG. 10, second, the SOI substrate 50 is attached to the main surface 10a. The SOI substrate 50 has a semiconductor layer 51, a semiconductor layer 52, and an insulating layer 53. The insulating layer 53 is disposed between the semiconductor layer 51 and the semiconductor layer 52. The SOI substrate 50 is attached so that the semiconductor layer 51 faces the main surface 10a. Thereby, the semiconductor layer 51 is integrated with the substrate 10, and the cavity 11 is defined by the portion that was the semiconductor layer 51 and the recess 10e. After the SOI substrate 50 is attached, the semiconductor layer 52 and the insulating layer 53 are removed. When forming the cavity 11 by attaching the SOI substrate, since the side surface of the cavity 11 (that is, the side surface of the recess 10e) is formed by etching, it does not become curved in a cross-sectional view.

[0028] FIG. 11 is a cross-sectional view for explaining the first insulating film forming step S3. As shown in FIG. 11, in the first insulating film forming step S3, for example, by thermal oxidation, the first layer 21 is formed on the main surface 10a. After the first insulating film forming step S3, an ion implantation step S4 is performed. In the ion implantation step S4, by performing ion implantation, a resistor, wiring, and contact regions are formed on the main surface 10a. After the ion implantation step S4, a second insulating film forming step S5 is performed.

[0029] FIG. 12 is a cross-sectional view for explaining the second insulating film forming step S5. As shown in FIG. 12, in the second insulating film forming step S5, for example, by the CVD (Chemical Vapor Deposition) method, the second layer 22 is formed on the first layer 21. After the second insulating film forming step S5, a contact hole forming step S6 is performed.

[0030] FIG. 13 is a cross-sectional view for explaining the contact hole forming step S6. As shown in FIG. 13, in the contact hole forming step S6, a contact hole 20a is formed in the insulating film 20. In the contact hole forming step S6, first, a resist pattern is formed on the insulating film 20 using a photolithography process. Second, the insulating film 20 is partially opened by etching using the resist pattern as a mask, thereby forming the contact hole 20a. After the contact hole forming step S6, a pad forming step S7 is performed.

[0031] FIG. 14 is a cross-sectional view for explaining the pad forming step S7. In the pad forming step S7, as shown in FIG. 14, a pad 30 is formed on the insulating film 20. In the pad forming step S7, first, the constituent material of the pad 30 is formed on the insulating film 20 by, for example, sputtering. At this time, the constituent material of the pad 30 is also embedded in the contact hole 20a. Second, the formed constituent material of the pad 30 is patterned by etching using a resist pattern formed using a photolithography process as a mask. After the pad forming step S7, a protective film forming step S8 is performed.

[0032] In the protective film forming step S8, a protective film 40 is formed on the insulating film 20. In the protective film forming step S8, first, for example, by CVD method, the constituent material of the protective film 40 is formed on the insulating film 20 so as to cover the pad 30. Second, etching is performed on the formed constituent material of the protective film 40 using a resist pattern formed using a photolithography process as a mask, whereby the pad 30 is exposed. In this way, the structure of the sensor device 100 shown in FIGS. 1 and 2 can be obtained.

[0033] <Effect of the sensor device 100> The effect of the sensor device 100 will be described below.

[0034] In the sensor device 100, a cavity 11 is formed inside the substrate 10 by condensing, absorbing, and heat-treating the laser beam L inside the substrate 10. Therefore, in the sensor device 100, there is no need to go through a photolithography process to form the cavity 11, and the process is simplified. In the sensor device 100, by adjusting the position where the laser beam L is condensed and absorbed, the position where the cavity 13 is formed in the thickness direction of the substrate 10 changes, and as a result, the position of the cavity 11 formed in the thickness direction of the substrate 10 changes. That is, according to the sensor device 100, the position of the cavity 11 in the thickness direction of the substrate 10 can be easily adjusted.

[0035] When the position of the cavity 11 in the thickness direction of the substrate 10 changes, the thickness of the membrane 12 changes. Therefore, in the sensor device 100, the thickness of the membrane 12 is different, that is, the sensitivity and pressure resistance can be easily changed.

[0036] <Modification Example 1> FIG. 15 is a plan view for explaining the laser beam irradiation step S21 according to Modification Example 1. As shown in FIG. 15, a part of the plurality of cavities 13 may be formed to be arranged in a matrix in the first region R1 in a plan view, and another part of the plurality of cavities 13 may be formed to be arranged in a matrix in the second region R2 in a plan view. The first region R1 and the second region R2 are different regions in a plan view. In this case, it is possible to form a plurality of cavities 11 in the substrate 10.

[0037] <Modification Example 2> FIG. 16 is a plan view for explaining the laser beam irradiation step S21 according to Modification Example 2. As shown in FIG. 16, the plurality of cavities 13 may be arranged in a row. In this case, by connecting the plurality of cavities 13 arranged in a row, a cavity 11 extending linearly in a plan view is formed. Thus, the shape of the cavity 11 is not limited.

[0038] FIG. 17 is a plan view of an example of a sensor device 100 to which the laser light irradiation step S21 according to Modification 2 is applied. The sensor device 100 is not limited to an absolute pressure sensor. In FIG. 17, the illustration of the configuration other than the substrate 10 is omitted. As shown in FIG. 17, the sensor device 100 may be a biosensor. In this case, by connecting a plurality of cavities 11 extending linearly in a plan view, it is possible to form a flow path through which a culture medium or the like flows inside the substrate 10.

[0039] (Second Embodiment) The sensor device according to the second embodiment will be described. The sensor device according to the second embodiment is referred to as a sensor device 200. Here, the points different from the sensor device 100 will be mainly described, and overlapping descriptions will not be repeated.

[0040] <Configuration of Sensor Device 200> The configuration of the sensor device 200 will be described below.

[0041] FIG. 18 is a cross-sectional view of the sensor device 200. As shown in FIG. 18, the sensor device 200 includes a substrate 10, an insulating film 20, pads 30, and a protective film 40. In this regard, the configuration of the sensor device 200 is common to the configuration of the sensor device 100.

[0042] In the sensor device 200, a cavity 14 is formed inside the substrate 10. The cavity 14 communicates with the outside of the substrate 10 through the cavity 11. More specifically, the cavity 14 communicates with the outside of the substrate 10 at the side surface 10c through the cavity 11 extending along a direction intersecting the thickness direction of the substrate 10. In other words, the cavity 14 is open to the atmosphere. In the sensor device 200, the portion of the substrate 10 between the cavity 14 and the main surface 10a forms a membrane 12. The sensor device 200 is a differential pressure sensor. That is, since the cavity 14 is open to the atmosphere, the membrane 12 bends according to the differential pressure with the atmospheric pressure, and the sensor device 200 outputs a signal corresponding to the bending. In these regards, the configuration of the sensor device 200 is different from the configuration of the sensor device 100.

[0043] <Method for manufacturing sensor device 200> The method for manufacturing the sensor device 200 will be described below.

[0044] The method for manufacturing the sensor device 200 includes a preparation step S1, a cavity formation step S2, a first insulating film formation step S3, an ion implantation step S4, a second insulating film formation step S5, a contact hole formation step S6, a pad formation step S7, and a protective film formation step S8. In this regard, the method for manufacturing the sensor device 200 is common to the method for manufacturing the sensor device 100.

[0045] FIG. 19 is a cross-sectional view for explaining the preparation step S1 performed in the method for manufacturing the sensor device 200. As shown in FIG. 19, in the method for manufacturing the sensor device 200, in the preparation step S1, a substrate 10 in which a cavity 14 is formed is prepared. The cavity 14 may be formed by a conventionally known method. For example, it may be formed by the method using heat treatment described in Comparative Example 1 or the method of attaching an SOI substrate described in Comparative Example 2. Of course, the cavity 14 may also be formed by the same method as the cavity formation step S2.

[0046] FIG. 20 is a cross-sectional view for explaining the laser light irradiation step S21 performed in the method for manufacturing the sensor device 200. FIG. 21 is a cross-sectional view for explaining the heat treatment step S22 performed in the method for manufacturing the sensor device 200. As shown in FIGS. 20 and 21, a plurality of cavities 13 are formed by the condensing and absorption of the laser light L and the scanning of the laser light L inside the substrate 10, and a cavity 11 that communicates the cavity 14 with the outside of the substrate 10 is formed by connecting the plurality of cavities 13 by performing heat treatment. In this regard, the method for manufacturing the sensor device 200 is different from the method for manufacturing the sensor device 100.

[0047] <Modification 1> FIG. 22 is a cross-sectional view of the sensor device 200 according to Modification 1. As shown in FIG. 22, in the sensor device 200, a plurality of cavities 14 may be formed in the substrate 10. In the example shown in FIG. 22, two cavities 14 are formed, which may be referred to as cavity 14a and cavity 14b, respectively. Cavity 14a communicates with the outside of the substrate 10 at the side surface 10c by cavity 11. On the other hand, cavity 14b does not communicate with the outside of the substrate 10 by cavity 11.

[0048] In this case, the membrane 12 above cavity 14b is deflected by the ambient pressure, while the membrane 12 above cavity 14a is not deflected by the ambient pressure because cavity 14b does not communicate with the outside of the substrate 10 by cavity 11. Therefore, it is possible to use the electrical resistance value of the resistor formed in the membrane 12 above cavity 14a as a reference, and it is possible to provide the sensor device 200 with a reference function.

[0049] <Modification 2> FIG. 23 is a cross-sectional view of the sensor device 200 according to Modification 2. As shown in FIG. 23, the sensor device 200 may further include a telescopic member 60. The telescopic member 60 is disposed on the membrane 12. The constituent material of the telescopic member 60 is a material that expands and contracts with heat, a material that expands and contracts by absorbing water vapor, a material that expands and contracts by absorbing odor substances or chemical substances, and the like. In the sensor device 200, since the cavity 14 communicates with the outside of the substrate 10 by the cavity 11, the membrane 12 is not deflected by the ambient pressure and is deflected only by the expansion and contraction of the telescopic member 60. Therefore, in this case, the sensor device 200 becomes a sensor that detects heat, water vapor, odor, chemical substances, etc.

[0050] FIG. 24 is a cross-sectional view of the sensor device 200 according to Modification 3. Although an example in which the cavity 14 communicates with the outside of the substrate 10 at the main surface 10a by the cavity 11 has been described above, as shown in FIG. 24, the cavity 14 may communicate with the outside of the substrate 10 at the main surface 10a by the cavity 11.

[0051] <Effects of the sensor device 200> The effects of the sensor device 200 will be described below.

[0052] In the sensor device 200, since the cavity 14 communicates with the outside of the substrate 10 through the cavity 11, it is possible to endow the sensor device 200 with various functions. Note that forming the cavity 11 as a lateral hole that allows the cavity 14 to communicate with the outside of the substrate 10 on the side surface 10c is extremely difficult or impossible with conventional methods.

[0053] (Supplementary Note) Each of the above embodiments includes the following configurations.

[0054] <Supplementary Note 1> A step of preparing a substrate, and A step of forming a first cavity inside the substrate, and The step of forming the first cavity includes a step of forming a plurality of second cavities inside the substrate by condensing and absorbing laser light inside the substrate, and a step of connecting the plurality of second cavities by performing heat treatment on the substrate to form the first cavity. A method for manufacturing a sensor device.

[0055] <Supplementary Note 2> A method for manufacturing a sensor device according to Supplementary Note 1, wherein the formation position of the first cavity in the thickness direction of the substrate is changed by changing the formation positions of the plurality of second cavities in the thickness direction of the substrate.

[0056] <Supplementary Note 3> A method for manufacturing a sensor device according to Supplementary Note 1 or Supplementary Note 2, wherein the plurality of second cavities are arranged in a matrix in a plan view.

[0057] <Supplementary Note 4> A method for manufacturing a sensor device according to Supplementary Note 1 or Supplementary Note 2, wherein the plurality of second cavities are arranged in a column in a plan view.

[0058] <Supplementary Note 5> A part of the plurality of second cavities is arranged in a matrix within a first region in a plan view, The method for manufacturing a sensor device according to appended claim 1 or appended claim 2, wherein the other part of the plurality of second cavities is arranged in a matrix in a second region different from the first region in a plan view.

[0059] <Appended claim 6> A step of preparing a substrate, A step of forming a first cavity inside the substrate, The step of forming the first cavity includes a step of forming a plurality of second cavities inside the substrate by condensing and absorbing laser light inside the substrate, and a step of connecting the plurality of second cavities by performing heat treatment on the substrate to form the first cavity. A third cavity is formed inside the substrate, The method for manufacturing a sensor device, wherein the third cavity communicates with the outside of the substrate through the first cavity.

[0060] <Appended claim 7> The method for manufacturing a sensor device according to appended claim 6, wherein the third cavity communicates with the outside of the substrate on the main surface or the side surface of the substrate through the first cavity.

[0061] <Appended claim 8> Comprising a substrate, A first cavity is formed inside the substrate, The main surface of the substrate has a first portion above the first cavity and a second portion around the first portion, The first portion and the second portion are continuously flat, A sensor device, wherein unevenness is formed on the bottom surface of the first cavity.

[0062] <Appended claim 9> The sensor device according to appended claim 8, wherein the side surface of the first cavity is curved in a cross-sectional view.

[0063] <Appended claim 10> The sensor device according to appended claim 8 or appended claim 9, wherein the substrate has a membrane between the first cavity and the main surface of the substrate.

[0064] <Supplementary Note 11> Comprising a substrate, Inside the substrate, a first cavity and a third cavity are formed, The third cavity is communicated with the outside of the substrate on the side surface of the substrate by the first cavity, a sensor device.

[0065] <Supplementary Note 12> The substrate has a first membrane between the third cavity and the main surface of the substrate, the sensor device according to Supplementary Note 11.

[0066] <Supplementary Note 13> Further comprising a telescopic member disposed on the first membrane, the sensor device according to Supplementary Note 12.

[0067] <Supplementary Note 14> Inside the substrate, a fourth cavity is further formed, The substrate has a second membrane between the fourth cavity and the main surface of the substrate, the sensor device according to Supplementary Note 12.

[0068] As described above, the embodiments of the present disclosure have been described, but the above embodiments can be variously modified. Also, the scope of the present invention is not limited to the above embodiments. The scope of the present invention is indicated by the scope of the claims, and is intended to include all changes within the meaning and scope equivalent to the scope of the claims.

Explanation of Reference Numerals

[0069] 10 Substrate, 10a, 10b Main surface, 10c Side surface, 10d Groove, 10e Recess, 11 Cavity, 12 Membrane, 13, 14, 14a, 14b Cavities, 20 Insulating film, 20a Contact hole, 21 First layer, 22 Second layer, 30 Pad, 40 Protective film, 50 SOI substrate, 51, 52 Semiconductor layers, 53 Insulating layer, 60 Stretchable member, 100 Sensor device, 200 Sensor device, L Laser light, R1 First region, R2 Second region, S1 Preparation process, S2 Cavity formation process, S21 Laser light irradiation process, S22 Heat treatment process, S3 First insulating film formation process, S4 Ion implantation process, S5 Second insulating film formation process, S6 Contact hole formation process, S7 Pad formation process, S8 Protective film formation process.

Claims

1. A step of preparing a substrate, and A step of forming a first cavity inside the substrate, and the method for manufacturing a sensor device includes: The step of forming the first cavity includes a step of forming a plurality of second cavities inside the substrate by condensing and absorbing laser light inside the substrate, and a step of connecting the plurality of second cavities by performing heat treatment on the substrate to form the first cavity.

2. The method for manufacturing a sensor device according to claim 1, wherein the formation position of the first cavity in the thickness direction of the substrate is changed by changing the formation positions of the plurality of second cavities in the thickness direction of the substrate.

3. The method for manufacturing a sensor device according to claim 1, wherein the plurality of second cavities are arranged in a matrix in a plan view.

4. The method for manufacturing a sensor device according to claim 1, wherein the plurality of second cavities are arranged in a column in a plan view.

5. A part of the plurality of second cavities are arranged in a matrix within a first region in a plan view, and Another part of the plurality of second cavities are arranged in a matrix within a second region different from the first region in a plan view. The method for manufacturing a sensor device according to claim 1.

6. A step of preparing a substrate, and A step of forming a first cavity inside the substrate, and the method for manufacturing a sensor device includes: The step of forming the first cavity includes a step of forming a plurality of second cavities inside the substrate by condensing and absorbing laser light inside the substrate, and a step of connecting the plurality of second cavities by performing heat treatment on the substrate to form the first cavity. And A third cavity is formed inside the substrate, and The third cavity communicates with the outside of the substrate through the first cavity. The method for manufacturing a sensor device.

7. The method for manufacturing a sensor device according to claim 6, wherein the third cavity communicates with the outside of the substrate through the first cavity on a main surface or a side surface of the substrate.

8. A substrate is provided, and A first cavity is formed inside the substrate, and The main surface of the substrate has a first portion above the first cavity and a second portion surrounding the first portion, and The first portion and the second portion are continuously flat, and A sensor device, wherein unevenness is formed on the bottom surface of the first cavity.

9. The sensor device according to claim 8, wherein a side surface of the first cavity is curved in a cross-sectional view.

10. The sensor device according to claim 8 or claim 9, wherein the substrate has a membrane between the first cavity and the main surface of the substrate.

11. Comprising a substrate, Inside the substrate, a first cavity and a third cavity are formed, The sensor device, wherein the third cavity is communicated with the outside of the substrate on the side surface of the substrate by the first cavity.

12. The sensor device according to claim 11, wherein the substrate has a first membrane between the third cavity and the main surface of the substrate.

13. The sensor device according to claim 12, further comprising a telescopic member disposed on the first membrane.

14. Inside the substrate, a fourth cavity is further formed, The sensor device according to claim 12, wherein the substrate has a second membrane between the fourth cavity and the main surface of the substrate.

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