Semiconductor device

Abstract

To provide a semiconductor device which suppresses occurrence of Kirkendall voids and improves reliability.SOLUTION: A semiconductor device has: a first conductive member; a first conductive film which is provided on a part of the first conductive member and is barrier metal; a first solder material which is provided on the first conductive film; a semiconductor element which is provided on the first solder material; a second solder material which is provided on the semiconductor element; a second conductive member having a first region facing the semiconductor element through the second solder material; a resin part for sealing the part of the first conductive member, the second conductive member, the first conductive film, the first solder material, the second solder material and the semiconductor element; and a first peripheral region which is positioned in the periphery of the overlapping region of the semiconductor element, in the first conductive member, and comes in direct contact with the resin part.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] The bonding between a semiconductor element and a conductive member such as a die pad may be performed using solder. For example, when the solder is a metal containing Sn and the die pad is a metal containing Cu, due to the mutual diffusion between different metal elements, kirkendall voids may occur in the die pad. There is a risk.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the present invention is to provide a semiconductor device that suppresses the generation of kirkendall voids and improves reliability. That is.

Means for Solving the Problems

[0005] The semiconductor device of the embodiment includes a first conductive member, a first conductive film that is a barrier metal provided on a part of the first conductive member, a first solder material provided on the first conductive film, a semiconductor element provided on the first solder material, a second solder material provided on the semiconductor element, a second conductive member having a first region facing the semiconductor element via the second solder material, a part of the first conductive member, the second conductive member, the first conductive film, the first solder material, and the semiconductor element, and the second solder material, and the first region of the second conductive member facing the semiconductor element via the second solder material, a part of the first conductive member, the second conductive member, the first conductive film, the first solder material, and the semiconductor element, and the second solder material, and the first region of the second conductive member facing the semiconductor element via the second solder material, a part of the first conductive member, the second conductive member, the first conductive film, the first solder A solder material, a resin portion that seals the second solder material and the semiconductor element, and among the first conductive members which is located around the region where the semiconductor element overlaps and is in direct contact with the resin portion, a first peripheral region .

[0006] A semiconductor device according to another embodiment includes a first conductive member, a first conductive film provided on a part of the first conductive member and containing at least Ni, a first solder material provided on the first conductive film, a semiconductor element provided on the first solder material, a second solder material provided on the semiconductor element, a second conductive member having a first region facing the semiconductor element through the second solder material, a resin portion that seals a part of the first conductive member, the second conductive member, the first conductive film, the first solder material, the second solder material, and the semiconductor element, and among the first conductive members, a first peripheral region that is located around the region where the semiconductor element overlaps and is in direct contact with the resin portion. .

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4A

Figure 4B

Figure 4C

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Embodiments for Carrying Out the Invention

[0008] Hereinafter, each embodiment of the present invention will be described with reference to the drawings.

[0009] Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes, etc. are not necessarily the same as the actual ones. Also, in the case of representing the same part even if it is the same part, there are cases where the dimensions and ratios of each other are represented differently in the drawings.

[0010] For example, in the cross-sectional views shown in the specification of the present application, there are those showing a stacked structure, but the ratio of the thicknesses of the layers of the stacked structure is not necessarily the same as the actual one. In the cross-sectional view, even if one layer is shown to be thicker than the other layer, in reality, the thickness of one layer and the other layer may be the same, or one layer may be thinner than the other layer. That is the dimensions such as the thickness shown in the drawings in the specification of the present application may be different from the actual ones.

[0011] The direction from the first conductive member 11 toward the semiconductor element 40 is defined as the Z direction (first direction). Also the direction orthogonal to the Z direction is the X direction (second direction), and the direction intersecting the X direction and the Z direction is the Y direction (third direction). The semiconductor device 101 shown in FIG. 3 shows a cross-sectional view in the X-Z plane is. In the present embodiment, the X direction, Y direction, and Z direction are shown as orthogonal, but they are not limited to being orthogonal and may have an intersecting relationship with each other.

[0012] Also, for the purpose of explanation, the positive direction of the Z direction is referred to as "up", and the negative direction of the Z direction is referred to as "down". However, the directions of "up" and "down" are not limited to the direction of gravity or the direction at the time of mounting the semiconductor device.

[0013] In the present specification and each figure, the same elements as those described above with respect to the previously shown figures are given the same reference numerals, and detailed descriptions are appropriately omitted.

[0014] (First Embodiment) FIGS. 1 and 2 show perspective views of a semiconductor device 101 according to the first embodiment. FIG. 1 shows the appearance including the resin portion 50, and FIG. 2 shows an example of the internal wiring structure. As shown in FIG. 1, a part of the first conductive member 11 and the second conductive member 12 included in the semiconductor device 101 protrudes from the resin portion 50. The first conductive member 11 is, for example, a lead frame. A plurality of portions of the first conductive member 11 and the second conductive member 12 may each be exposed from the resin portion 50. Note that when referring to exposure, it includes cases where they protrude as shown in FIGS. 1 and 2, and cases where they are exposed on the lower surface of the package.

[0015] FIG. 2 shows the internal wiring structure sealed in the resin portion 50 in FIG. 1. A semiconductor element 40 is provided between the first conductive member 11 and the second conductive member 12. Among the second conductive member 12, the region facing the semiconductor element 40 in the Z direction is referred to as the first region 12a. The semiconductor element 40 is sealed in the resin portion 50. The first conductive member 11 and the second conductive member 12 are each ​​​​​​The first conductive member 11 and the second conductive member 12 are electrically connected to the semiconductor element 40. It is sealed with a resin part 50.

[0016] For example, a MOSFET is formed in the semiconductor element 40. The first conductive member 11 is, for example, The second conductive member 12 is connected to the drain electrode of the semiconductor element 40, for example. The semiconductor device 101 further includes a third conductive member 13. The third conductive member 13 is electrically connected to, for example, the gate electrode of the MOSFET. The third conductive member 13 is not limited to the plate-shaped member shown in FIG. may include, for example, bonding wires.

[0017] The first conductive member 11 has a first exposed portion 11p protruding from the resin portion 50. Although the exposed portions 11p are provided at four positions in FIG. 2, they do not necessarily have to be provided at four positions. The second conductive member 12 may have a second exposed portion 12p protruding from the resin portion 50. Although the second exposed portions 12p are provided at three locations in FIG. 2, they are not necessarily provided at three locations. It is not necessary to be kicked.

[0018] The shapes of the first exposed portion 11p and the second exposed portion 12p are not limited to the shapes shown in FIG. For example, it may be a gull-wing type or a J type. A gull-wing type is a type where the position in the Z direction is different. Towards the tip of the first exposed portion 11p or the second exposed portion 12p The step is provided in the negative direction of the Z direction. The first exposed portion 11p is bent inwardly, and the tip of the first exposed portion 11p faces in the positive direction of the X direction. The exposed portion 11p and the second exposed portion 12p do not need to protrude from the resin portion 50 in the X direction. On the lower surface of the resin portion 50, electrical connection with the outside may be achieved.

[0019] Figure 3 shows the cross-section A - A' shown in Figure 2. The cross-section A - A' is the cross-section passing through the first exposed portion 11p of the first conductive member 11 and the second exposed portion 12p of the second conductive member 12. It exists.

[0020] Between the first conductive member 11 and the second conductive member 12, a first conductive film 21, a first solder material 31, a semiconductor element 40, and a second solder material 32 are provided. The first conductive film 21 is provided on a part of the first conductive member 11. The first solder material 31 is provided on the first conductive film 21 and is in contact with a part of the first conductive member 11 and at least a part of the first conductive film 21. The semiconductor element 40 is provided on the first solder material 31.

[0021] The first conductive film 21 is not provided on the first exposed portion 11p of the first conductive member 11. It is desirable that the first conductive film 21 is covered by the first solder material 31 and does not contact the resin portion 50, because the adhesion of the resin portion 50 can be improved as described later.

[0022] The second conductive member 12 has a first region 12a that faces the semiconductor element 40 in the Z direction. A second solder material 32 is provided between the semiconductor element 40 and the first region 12a of the second conductive member 12. The first region 12a and the semiconductor element 40 face each other via the second solder material 32 and are electrically connected.

[0023] The first conductive member 11 and the second conductive member 12 are metals containing, for example, Cu. The first conductive member 11 and the second conductive member 12 may be formed from the same material.

[0024] The first conductive film 21 is a metal containing, for example, Ni. The first conductive film 21 functions as a barrier metal at the joint surface between the first conductive member 1 1 and the first solder material 31. The first conductive film 21 contains a metal element with a smaller diffusion coefficient than that of the first conductive member 11. Here, a small diffusion coefficient means that the movement of metal atoms is less likely to occur at the joint surface with a different metal.

[0025] The first solder material 31 and the second solder material 32 are solders containing, for example, Sn. The first solder material 31 and the second solder material 32 are formed from, for example, the same material. The first solder material 31 and the second solder material 32 may contain Sn, for example, at a mass percentage concentration of 50% or more . In addition to Sn, the first solder material 31 may contain at least one of Pb, Sb, Ni, Ag, Bi, Cu, or Zn .

[0026] The resin part 50 seals the first conductive film 21, the first solder material 31, the semiconductor element 40, the second solder material 3 2, a part of the first conductive member 11, and a part of the second conductive member 12. The resin part 50 contains, for example, an epoxy resin.

[0027] The first conductive member 11 has a first peripheral region 11 r located around the region where the semiconductor element 40 overlaps. Here, the region where the semiconductor element 40 overlaps means that when the semiconductor element 40 is projected in one direction (for example, the Z direction), it is the region where the shadow of the semiconductor element 40 extends within the first conductive member 11. Referring to FIG. 3 for explanation, the first peripheral region 11r is a part of the upper surface of the first conductive member 11 and is located so as to surround the region where the first conductive member 11 is in contact with the first solder material 31 or the first conductive film 21. The first conductive member 11 has at least one of the first peripheral region 11r ​In the section, it is in direct contact with the resin part 50.

[0028] The first exposed part 11p and the second exposed part 12p are exposed from the resin part 50. The first exposed part 11p and the second exposed part 12p are provided for electrical connection with an external electrode. For example, by applying a voltage between the first exposed part 11p and the second exposed part 12p, current can flow from the first conductive member 11 , through the semiconductor element 40, to the second conductive member 12.

[0029] The first peripheral region 11r does not include the first exposed part 11p that is exposed from the resin part 50.

[0030] Above, with reference to FIG. 3, the cross-sectional view of the semiconductor device 101 according to the first embodiment has been described. That's it.

[0031] Next, with reference to FIG. 4, an example of the positional relationship between the first conductive film 2 1 and the first solder material 31 in the semiconductor device 101 according to the first embodiment will be described. FIGS. 4A, B, and C are XY plan views showing the first conductive member 11 and the first conductive film 21.

[0032] In FIG. 4, the resin part 50 is located in the region surrounded by the dashed-dotted line. Also, the first solder material 31 is located in the region surrounded by the dotted line. The hatching of the resin part 50 and the first solder material 31 is omitted.

[0033] The first exposed part 11p is exposed from the resin part 50. FIG. 4 shows an example in which four first exposed parts 11p are provided, but it is not limited thereto. Note that the first solder material 31 and the semiconductor element 40 above the first solder material 31 may have, for example, the same outer shape. That is, the region surrounded by the dotted line can be understood as the region where the first solder material 31 is located, or the semiconductor element 40 It may be interpreted as the region where it is located.

[0034] The first peripheral region 11r of the first conductive member 11 is located around the region where the semiconductor element 40 overlaps. It is the surrounding area. The first peripheral region 11r is around the semiconductor element 40 and is located in the positive and negative directions in the X direction, and the positive and negative directions in the Y direction. In FIG. 4, the first peripheral region 11r is shown as the region outside the region (the region where the semiconductor element 40 is provided) indicated by the dotted line in the first conductive member 11 and does not include the first exposed portion 11p.

[0035] Note that the shape of the first conductive film 21 can be determined by the arrangement of the electrodes of the semiconductor element 40 provided on the first solder material 31. For example, by arranging the first conductive film 21 at a position overlapping the electrode when viewed from the Z direction, it is possible to suppress the generation of kirkendall voids in the portion where the current mainly flows, which is desirable.

[0036] First, an explanation will be given with reference to FIG. 4A. The first conductive film 21 is covered by the first solder material 31 in the XY plane. Therefore, the resin portion 50 does not contact the first conductive film 21. At least the first solder material 31 is interposed between the resin portion 50 and the first conductive film 21. In other words, the outer shape of the first conductive film 21 in the XY plane is smaller than the outer shape of the first solder material 31 (semiconductor element 40). In this case, a part of the first solder material 31 is in direct contact with the first conductive member 11.

[0037] In the example shown in FIG. 4A, the first conductive film 21 does not directly contact the resin portion 50. The first peripheral region 11r directly contacts the resin portion 50. In particular, the region located near the first exposed portion 11p in the first peripheral region 11r directly contacts the resin portion 50. In other words, ​​​​​​​​​ A first peripheral region 11r that contacts the resin portion 50 is located between the first conductive film 21 and the first exposed portion 11p. is located.

[0038] FIG. 4B shows a case where the shape of the first conductive film 21 is not square and has no corners. In a shape having corners, stress may concentrate on a portion with a large curvature (small radius of curvature) at the interface between the first conductive film 21 and the first solder material 31. By providing the first conductive film 21 in a shape without corners, such as an oval or an ellipse, it is possible to relieve stress. In a shape having corners, stress may concentrate on a portion with a large curvature (small radius of curvature) at the interface between the first conductive film 21 and the first solder material 31. is located. By providing the first conductive film 21 in a shape without corners, such as an oval or an ellipse, it is possible to relieve stress. is provided, stress can be relieved.

[0039] Also, as shown in FIG. 4C, the first conductive film 21 may be divided into a plurality of parts. FIG. 4C shows a case where it is divided into two rows in the X direction and the Y direction, but it may be further finely divided, or may be divided into different numbers in the X direction and the Y direction. shows a case where it is divided into two rows in the X direction and the Y direction, but it may be further finely divided, or may be divided into different numbers in the X direction and the Y direction. and may be divided into different numbers in the X direction and the Y direction.

[0040] In FIGS. 4A, 4B, and 4C, the area of the region where the first solder material 31 is provided (the region surrounded by the dotted line ) may be, for example, 20 - 90% of the area of the region where the first conductive film 21 is provided. Also, it may be 30 - 80% of the area. and may be 30 - 80% of the area.

[0041] According to the semiconductor device 101 according to the present embodiment, the first conductive film 21 is provided on a part of the first conductive member 11 and is interposed between the first conductive member 11 and the first solder material 31, thereby suppressing the generation of kirkendall voids in the first conductive member 11 and suppressing the deterioration of the characteristics of the semiconductor device. Further, since the first conductive member 11 can be in close contact with the resin portion 50 in the first peripheral region 11r, the adhesiveness of the resin portion 50 is improved, and the reliability of the semiconductor device is improved. is provided on a part of the first conductive member 11 and is interposed between the first conductive member 11 and the first solder material 31, thereby suppressing the generation of kirkendall voids in the first conductive member 11 and suppressing the deterioration of the characteristics of the semiconductor device. is interposed between the first conductive member 11 and the first solder material 31, thereby suppressing the generation of kirkendall voids in the first conductive member 11 and suppressing the deterioration of the characteristics of the semiconductor device. can be suppressed. Further, since the first conductive member 11 can be in close contact with the resin portion 50 in the first peripheral region 11r, the adhesiveness of the resin portion 50 is improved, and the reliability of the semiconductor device is improved. is provided on a part of the first conductive member 11 and is interposed between the first conductive member 11 and the first solder material 31, thereby suppressing the generation of kirkendall voids in the first conductive member 11 and suppressing the deterioration of the characteristics of the semiconductor device. Further, since the first conductive member 11 can be in close contact with the resin portion 50 in the first peripheral region 11r, the adhesiveness of the resin portion 50 is improved, and the reliability of the semiconductor device is improved. is improved.

[0042] According to the semiconductor device 101 according to this embodiment, it is possible to suppress the generation of Kirkendall voids. Hereinafter, for the sake of explanation, an example will be described in which the first conductive member 11 contains Cu, the first conductive film 21 contains Ni, and the first solder material 31 contains Sn.

[0043] First, consider the case where the first conductive film 21 is not provided. That is, the first conductive member 11 containing Cu is in contact with the first solder material 31 containing Sn. At the interface where the metal containing Cu and the metal containing Sn are joined, an alloy containing Cu and Sn is formed. Cu atoms and Sn atoms have different diffusion rates at the interface, and the diffusion of Cu atoms proceeds faster than that of Sn atoms (the diffusion coefficient is large). As a result, the amount of Cu atoms diffusing from the first conductive member 11 toward the first solder material 31 becomes larger than the amount of Sn atoms diffusing in the opposite direction. As described above, the effect of interdiffusion at the interface where different metals are joined is called the Kirkendall effect. Due to the difference in the diffusion coefficients of Cu and Sn, Cu atoms are lost from the first conductive member 11 containing Cu or the alloy region generated at the interface, resulting in the generation of vacancies. The vacancies generated by the Kirkendall effect are called Kirkendall voids. That is, when the first conductive member 11 containing Cu is in contact with the first solder material 31 containing Sn, Kirkendall voids may be generated in the first conductive member 11. The generation of Kirkendall voids may deteriorate the conductivity of the first conductive member 11 and increase the on-voltage of the semiconductor element 40.

[0044] On the other hand, like the semiconductor device 101 according to this embodiment, when the first conductive film 21 containing Ni is provided

[0045]

[0046] ​​​​​​​​​​​Consider the case where Ni has a smaller diffusion coefficient than Cu. Therefore, the first conductive film 21 can suppress the diffusion of atoms from the first conductive member 11 to the first solder material 31. It is possible to suppress the Kirkendall voids of the first conductive member 11.

[0047] By providing the first conductive film 21 at least partially between the first conductive member 11 and the first solder material 31, the Kirkendall voids can be suppressed, and the deterioration of the characteristics of the semiconductor device can be suppressed.

[0048] Furthermore, according to the semiconductor device 101 according to the present embodiment, the adhesion of the resin portion 50 can be improved. Hereinafter, for the sake of explanation, an example in which the first conductive member 11 contains Cu and the first conductive film 21 contains Ni will be described. The resin portion 50 contains, for example, an epoxy resin. It is known that the adhesion between Cu and the epoxy resin is superior to the adhesion between Ni and the epoxy resin.

[0049] Unlike the present embodiment, when the first conductive film 21 is formed over the entire upper surface of the first conductive member 11 and is also provided in the first peripheral region and the first exposed portion 11p, the adhesion of the resin portion 50 decreases. This is because the first conductive film 21 is also formed over the first peripheral region 11r, and the first conductive film 21 is in direct contact with the resin portion 50. Since the first conductive film 21 containing Ni has lower adhesion to the resin portion 50 containing the epoxy resin than the first conductive member 11 containing Cu, the risk of resin peeling increases, reducing the reliability of the semiconductor device.

[0050] The peeling (crack) that occurs between the first conductive film 21 over the first peripheral region 11r and the resin portion 50 may reach the first solder material 31 and the semiconductor element 40 from the vicinity of the first exposed portion 11p. ​​Yes. For example, moisture may enter from the outside through cracks, which may deteriorate the performance of the semiconductor device. As described above, when the first conductive film 21 is provided over the entire upper surface of the first conductive member 11, there is a risk that cracks may occur in the resin portion 50 and the reliability of the semiconductor device may be impaired. There is a risk.

[0051] On the other hand, according to the present embodiment, as shown in FIG. 3, by not providing the first conductive film 21 in the vicinity of at least the first exposed portion 11p in the first peripheral region 11r, the first conductive member 11 is in contact with the resin portion 50 in at least a part of the first peripheral region 11r. Since the first conductive member 11 containing Cu has a greater adhesion to the resin portion 50 than the first conductive film 21 containing Ni, the risk of resin peeling in the first peripheral region 11r is small.

[0052] As shown in FIG. 4A, the first conductive film 21 is covered with, for example, the first solder material 31. In other words, the first conductive film 21 does not contact the resin portion 50. By covering the first conductive film 21 with the first solder material 31, it is possible to suppress a decrease in adhesion due to contact between the first conductive film 21 and the resin portion 50. In order to enhance the adhesion of the resin portion 50, it is desirable that the first conductive film 21 be covered with the first solder material 31.

[0053] According to the semiconductor device 101 according to the present embodiment, by contacting the resin portion 50 and the first conductive member 11 in the first peripheral region 11r, resin peeling in the first peripheral region 11r is suppressed, and the reliability of the semiconductor device is improved. In order to enhance the adhesion of the resin portion 50, it is desirable that the first conductive film 21 be covered with the first solder material 31.

[0054] When the first conductive film 21 is covered with the first solder material 31, the resin portion 50 can be more reliably... It is possible to improve the adhesion. For example, as shown in FIG. 4A, when the first conductive film 21 is formed When the first solder material 31 and the semiconductor element 40 are provided, if misalignment occurs However, as long as the degree of misalignment is equal to or less than a predetermined size, the first conductive film 21 does not protrude from the first solder material 31 When forming the first conductive film 21 having the same size as the outer shape of the first conductive member 11 or the semiconductor element 40, if misalignment occurs, the first conductive film 21 may protrude from the first solder material 31 There is a risk of coming out.

[0055] According to the semiconductor device 101 according to the present embodiment, by forming the first conductive film 21 at least in part between the first conductive member 11 and the first solder material 31, voids can be suppressed, and deterioration of the characteristics of the semiconductor device can be suppressed. In addition, by not forming the first conductive film 21 in at least a part of the first peripheral region 11r, peeling of the resin portion 50 can be suppressed, and the reliability of the semiconductor device can be improved.

[0056] (Second Embodiment) FIG. 5 is a cross-sectional view taken along line A-A' of the semiconductor device 102 according to the second embodiment. Hereinafter, when referring to a cross-sectional view taken along line A-A' ', in each embodiment, it is intended to be a cross-sectional view at a position corresponding to the line A-A' in FIG. 2 according to the first embodiment. FIG. 6 is a plan view showing the arrangement of the first conductive film 21 in the second embodiment. A common part with the semiconductor device 101 according to the first embodiment will be partially omitted from the description.

[0057] First, the cross-sectional structure will be described with reference to FIG. 5. As shown in FIG. 5, the first conductive film 21 is provided on a part of the first conductive member 11. On the first conductive film 21, the first solder material 31 is provided. In other words, a first conductive film 21 is provided between the first solder material 31 and the first conductive member 11, and the first solder material 31 and the first conductive member 11 do not contact directly. The first conductive film 21 contacts the resin portion 50 in part. The first peripheral region 11r of the first conductive member 11 contacts the resin portion 50 directly at least in part. A part of the first peripheral region 11r has the first conductive film 21 protruding from the first solder material 31. In a part of the first peripheral region 11r, the first conductive member 11 and the resin portion 50 face each other with the first conductive film 21 therebetween.

[0058] On the other hand, in the first peripheral region 11r, near the first exposed portion 11p, the first conductive film 21 is not provided. In other words, the first exposed portion 11p and the first conductive film 21 are separated, and there is the first peripheral region 11r contacting the resin portion 50 between the first exposed portion 11p and the first conductive film 21. A part of the first peripheral region 11r contacts the resin portion 50 directly at least in part. A part of the first peripheral region 11r has the first conductive film 21 protruding from the first solder material 31. In a part of the first peripheral region 11r, the first conductive member 11 and the resin portion 50 face each other with the first conductive film 21 therebetween. A part of the first peripheral region 11r has the first conductive film 21 protruding from the first solder material 31. In a part of the first peripheral region 11r, the first conductive member 11 and the resin portion 50 face each other with the first conductive film 21 therebetween. In a part of the first peripheral region 11r, the first conductive member 11 and the resin portion 50 face each other with the first conductive film 21 therebetween. .

[0059] On the other hand, in the first peripheral region 11r, near the first exposed portion 11p, the first conductive film 21 is not provided. In other words, the first exposed portion 11p and the first conductive film 21 are separated, and there is the first peripheral region 11r contacting the resin portion 50 between the first exposed portion 11p and the first conductive film 21. The first exposed portion 11p and the first conductive film 21 are separated, and there is the first peripheral region 11r contacting the resin portion 50 between the first exposed portion 11p and the first conductive film 21. is provided.

[0060] Next, with reference to FIG. 6, the positional relationship between the first conductive film 21 and the first solder material 31 will be described. The configuration of FIG. 6 is common with the configurations of FIGS. 4A, B, and C except for the shape of the first conductive film 21. For example, in FIG. 6, the resin portion 50 is located in the region surrounded by the dashed-dotted line. The first solder material 31 is located in the region surrounded by the dotted line. Also, the region surrounded by the dotted line can be understood to show the semiconductor element 40 provided on the first solder material 31. The hatching of the resin portion 50 and the first solder material 31 is omitted. For example, in FIG. 6, the resin portion 50 is located in the region surrounded by the dashed-dotted line. The first solder material 31 is located in the region surrounded by the dotted line. Also, the region surrounded by the dotted line can be understood to show the semiconductor element 40 provided on the first solder material 31. The hatching of the resin portion 50 and the first solder material 31 is omitted. The first solder material 31 is formed on the first conductive film 21. The first solder material 31 is provided .

[0061] The first solder material 31 is formed on the first conductive film 21. The first solder material 31 is provided The area is smaller than the area where the first conductive film 21 is provided. A first solder material 31 and the first conductive A first conductive film 21 is interposed between the member 11.

[0062] The first peripheral region 11r of the first conductive member 11 is around the region where the semiconductor element 40 overlaps and is located in the positive and negative directions in the X direction and the positive and negative directions in the Y direction. The first conductive film 2 1 is provided in at least a part of the first peripheral region 11r in the positive and negative directions in the X direction and the positive and negative directions in the Y direction. However, the first conductive film 21 is separated from the first exposed portion 11p.

[0063] That is, as long as the first conductive film 21 does not reach the first exposed portion 11p, the first conductive film 21 can be formed to protrude from the first solder material 31 and have a wide area. Regarding the positive direction in the X direction of the first conductive member and the positive and negative directions in the Y direction, the first conductive film 21 may be formed larger than the case shown in FIG. 6. 1 can be formed. For example, the first conductive film 21 may be formed over the entire surface of the first peripheral region 11r except for the vicinity of the first exposed portion 11p. That is, the formation of the first conductive film 21 is performed by, for example, plating treatment. However, the mask for the plating treatment can be limited to the vicinity of the first exposed portion 11p in the first peripheral region 11r. In other words, the mask for the plating treatment only needs to cover at least the first exposed portion 11p. There is no need to form a mask in the region located in the positive direction in the X direction beyond a predetermined position between the first exposed portion 11p and the semiconductor element 40 in the X direction, which facilitates mask formation.

[0064]

[0065] ​​​​​​​​According to the semiconductor device 102 according to the second embodiment, while providing the first conductive film 21 over a wider area than the semiconductor device 101 according to the first embodiment, among the first peripheral regions 11r, resin peeling can be suppressed in the vicinity of the first exposed portion 11p, and the reliability of the semiconductor device can be improved. Also, compared with the semiconductor device 101 according to the first embodiment, generation of kirkendall voids can be further suppressed, so that deterioration of the characteristics of the semiconductor device can be suppressed. While providing it over a wider area than the semiconductor device 101, among the first peripheral regions 11r, resin peeling is suppressed in the vicinity of the first exposed portion 11p, and the reliability of the semiconductor device can be improved. Also, compared with the semiconductor device 101 according to the first embodiment, generation of kirkendall voids can be further suppressed, so that deterioration of the characteristics of the semiconductor device can be suppressed.

[0066] In the semiconductor device 102 shown in FIG. 5, although the first conductive film 21 is provided over a wider area than the semiconductor device 101 according to the first embodiment, the first conductive film 21 is not formed in the vicinity of the first exposed portion 11p among the first peripheral regions 11r. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. This is because in the vicinity of the first exposed portion 11p among the first peripheral regions 11r, the first peripheral region 11r and the resin portion 50 are in direct contact and have high adhesion. Resin peeling is suppressed in the vicinity of the first exposed portion 11p among the first peripheral regions 11r, and intrusion of moisture or the like from the outside into the resin portion 50 is suppressed. While providing it over a wider area than the semiconductor device 101 according to the first embodiment, the first conductive film 21 is not formed in the vicinity of the first exposed portion 11p among the first peripheral regions 11r. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p. That is, the region where the first conductive film 21 and the resin portion 50 are in contact is a region close to the semiconductor element 40 among the first peripheral regions 11r, and even if resin peeling occurs, it is possible to suppress growth into a crack reaching the first exposed portion 11p.

[0067] Also, as shown in FIG. 6, by forming the first conductive film 21 over a wider area than the first solder material 31, it is possible to surely suppress contact between the first conductive member 11 and the first solder material 31. Even if displacement of the first solder material 31 or the semiconductor element 40 occurs, since the first conductive film 21 is provided over a wide area, contact between the first solder material 31 and the first conductive member 11 can be suppressed. Also, as shown in FIG. 6, by forming the first conductive film 21 over a wider area than the first solder material 31, it is possible to surely suppress contact between the first conductive member 11 and the first solder material 31. Also, as shown in FIG. 6, by forming the first conductive film 21 over a wider area than the first solder material 31, it is possible to surely suppress contact between the first conductive member 11 and the first solder material 31. Also, as shown in FIG. 6, by forming the first conductive film 21 over a wider area than the first solder material 31, it is possible to surely suppress contact between the first conductive member 11 and the first solder material 31. Also, as shown in FIG. 6, by forming the first conductive film 21 over a wider area than the first solder material 31, it is possible to surely suppress contact between the first conductive member 11 and the first solder material 31.

[0068] That is, in the present embodiment, instead of partially allowing contact between the first conductive film 21 and the resin portion 50, more reliably, the first conductive film 21 can be formed between the first conductive member 11 and the first solder material 31. The generation of kirkendall voids can be suppressed by the first conductive film 21, so that, compared with the first embodiment, further deterioration of the characteristics of the semiconductor device can be suppressed.

[0069] (Third Embodiment) FIG. 7 is a cross-sectional view of a semiconductor device 103 according to the third embodiment. A part of the common part with the semiconductor device 101 according to the first embodiment will be omitted from the description.

[0070] A second conductive film 22 is provided in at least a part between the second solder material 32 and the first region 12a of the second conductive member 12. The second conductive film 22 is covered with the second solder material 32. In other words, the second conductive film 22 is not in contact with the resin portion 50.

[0071] The second conductive film 22 contains a metal element having a smaller diffusion coefficient than the metal element constituting the first region 12a of the second conductive member 12. The second solder material 32 is, for example, a solder containing Sn. The second conductive film 22 is, for example, a metal containing Ni. The first region 12a of the second conductive member 12 is, for example, a metal containing Cu.

[0072] The second conductive film 22 is, for example, a film of a metal containing Ni provided in at least a part between a metal containing Sn and a metal containing Cu. The second conductive film 22 functions as a barrier metal that suppresses the kirkendall effect occurring between a metal containing Sn and a metal containing Cu.

[0073] Also, regarding the shape of the second conductive film 22, as described with reference to FIGS. 4A, 4B, and 4C, the shape can be various shapes such as a square or an oval, and may also be divided into a plurality of parts. .

[0074] According to the semiconductor device 103 according to the present embodiment, by providing the second conductive film 22 in at least a part between the second solder material 32 and the first region 12a, the Kirkendall effect between the second solder material 32 and the first region 12a can be suppressed, and the generation of Kirkendall voids in the first region 12a can be suppressed. The generation of Kirkendall voids can be suppressed on both the upper side and the lower side of the semiconductor element 40, and the deterioration of the characteristics of the semiconductor device

[0075] 103 can be suppressed. According to the semiconductor device 103 according to the present embodiment, compared with the semiconductor device 101 according to the first embodiment, the generation of Kirkendall voids can be further suppressed, and the deterioration of the characteristics of the semiconductor device can be suppressed.

[0076] (Fourth Embodiment) FIG. 8 is a cross-sectional view showing a semiconductor device 104 according to the fourth embodiment. A part of the description of the common part with the semiconductor device 103 according to the third embodiment will be omitted.

[0077] The second conductive member 12 shown in FIG. 8 has a structure different from that of the semiconductor device 103 according to the third embodiment between the first region 12a and the second exposed portion 12p. The second conductive member 12 further includes a second region 12b, a third conductive film 23, a third solder material 33, a fourth conductive film 24, and a third region 12c in addition to the first region 12a and the second exposed portion 12p.

[0078] The second region 12b is formed continuously with the first region 12a. The second region 12b is, for example, ​​​​​It is a metal containing Cu. Between the first region 12a and the second region 12b, there may be provided a portion where the positions in the Z direction are different from those of the first region 12a and the second region 12b. For example, as shown in FIG. 8, it is located in the positive direction in the Z direction with respect to the first region 12a and the second region 12b , and a structure for suppressing a short-circuit defect due to the second solder material 32 is possible.

[0079] The third conductive film 23 is formed between the second region 12b and the third solder material 33. The third conductive film 23 is, for example, a metal containing Ni and may be formed of the same material as the second conductive film 22. The third conductive film 23 is formed, for example, by plating.

[0080] The third solder material 33 is provided between the third conductive film 23 and the fourth conductive film 24. The third solder material 33 is, for example, a solder containing Sn. The third solder material 33 may be formed of the same material as the first solder material 31 and the second solder material 32.

[0081] The fourth conductive film 24 is formed between the third solder material 33 and the third region 12c. The fourth conductive film 24 is, for example, a metal containing Ni and may be formed of the same material as the third conductive film 23.

[0082] The third region 12c is provided under the fourth conductive film 24 and is formed continuously, for example, with the second exposed portion 12p. In the third region 12c, the fourth conductive film 24 is formed, while it is desirable that the fourth conductive film is not formed on the second exposed portion 12p.

[0083] The region located between the third region 12c and the second exposed portion 12p is called the second peripheral region 12r. Even when the third region 12c and the second exposed portion 12p are integrally formed, the fourth conductive film 24 is selectively formed between the third solder material 33 and the third region 12c to form the fourth conductive film 24 It is desirable not to provide it in the second peripheral region 12r. The adhesion between the second conductive member 12 and the resin portion 50 can be improved.

[0084] Note that the portion including the second exposed portion 12p and the third region 12c is formed of, for example, the same material as the first conductive member 11 Hereinafter, an example of the process of forming the second exposed portion 12p and the third region 12c will be described.

[0085] First, from the first exposed portion 11p of the first conductive member 11 to the second exposed portion 12p of the second conductive member 12 is prepared as a continuous single conductive member. Next, by cutting the single conductive member the first conductive member 11 shown in FIG. 8 is obtained as the side including the first exposed portion 11p. On the other hand, the side including the second exposed portion 12p requires a step of further bending the conductive member. Through the step of bending the conductive member a step of providing a step in the Z direction between the second exposed portion 12p and the third region 12c results in the structure shown in FIG. 8.

[0086] That is, the structure shown in FIG. 8 can perform, in part, the step of forming the first conductive member 11 and the step of forming the portion from the second exposed portion 12p to the third region 12c of the second conductive member 12 simultaneously. In the semiconductor device 103 according to the third embodiment, the second conductive member 12 had to be separately prepared as something different from the first conductive member 11. On the other hand, according to the present embodiment since a part of the first conductive member 11 and the second conductive member 12 can be formed of the same material manufacturing efficiency can be improved.

[0087] According to the semiconductor device 104 according to the present embodiment, the second conductive member 12 includes the second region 12b and a third region 12c electrically connected by the second region 12b and the third solder material 33 The member including the third region 12c can be formed of the same material as the first conductive member 11 is. Therefore, it is possible to improve manufacturing efficiency and reduce manufacturing costs.

[0088] Further, the second conductive member 12 is not integrally formed, and a third solder material 33 is provided between the second region 12b and the third region 12c. By forming the third conductive film 23 and the fourth conductive film 24, the second region 12b and the third solder material 33, and the kirkendall effect between the third region 12c and the third solder material 33 can be suppressed.

[0089] On the other hand, the fourth conductive film 24 is preferably selectively provided under the third solder material 33. In the second peripheral region 12r, the fourth conductive film 24 and the resin portion 50 are prevented from adhering to each other, so that the adhesion between the second conductive member 12 and the resin portion 50 can be improved.

[0090] According to the semiconductor device 104 according to the present embodiment, the manufacturing efficiency of the first conductive member 11 and the second conductive member 12 is improved, and the second region 12b and the third region 12c, and the third solder material 33, the generation of kirkendall voids therebetween is suppressed, and the risk of resin peeling in the second peripheral region 12r can be reduced.

[0091] (Fifth Embodiment) FIG. 9 is a cross-sectional view of a semiconductor device 105 according to the fifth embodiment. A part of the description of the common part with the semiconductor device 104 according to the fourth embodiment will be omitted.

[0092] In FIG. 9, the second conductive film 22 is continuously formed from the first region 12a to the second region 12b. ​​​​It is formed. The second conductive film 22 is a metal containing, for example, Ni.

[0093] In FIG. 8, the second conductive film 22 and the third conductive film 23 are illustrated as separate conductive films formed separately and spaced apart. On the other hand, as shown in FIG. 9, a structure in which the second conductive film 22 is continuously formed from the first region 12a to the second region 12b can be formed by uniformly performing plating treatment over the entire surface. Compared with the case of selectively performing plating treatment as in the semiconductor device 104 according to the fourth embodiment, since mask formation is unnecessary, the manufacturing cost can be reduced.

[0094] Of the portion including the first region 12a and the second region 12b, the second conductive film 22 is provided only on the lower surface facing the second solder material 32 and the third solder material 33. In other words, on the opposite surface, the second conductive member 12 is in contact with the resin portion 50. The second conductive member 12 is a metal containing, for example, Cu, and the adhesion with the resin portion can be enhanced on the upper surface.

[0095] According to the semiconductor device 105 according to the present embodiment, by integrally forming the second conductive film 22 from the first region 12a to the second region 12b, the manufacturing cost can be reduced.

[0096] Note that between the first region 12a and the second region 12b, there is a portion where the second conductive film 22 is in contact with the resin portion 50, and there is a possibility of resin peeling. However, the interface between the second conductive film 22 and the resin portion 50 is located away from the first exposed portion 11p and the second exposed portion 12p in the resin portion 50, and it is possible to reduce the risk that cracks due to resin peeling reach the vicinity of the first exposed portion 11p and the second exposed portion 12p and moisture or the like enters from the outside.

[0097] ​According to at least one embodiment described above, by forming the first conductive film 21 on at least a part between the first conductive member 11 and the first solder material 31, voids are suppressed to suppress deterioration of the characteristics of the semiconductor device. At the same time, by not forming the first conductive film 21 on at least a part of the first peripheral region 11r, peeling of the resin portion 50 is suppressed, and the reliability of the semiconductor device can be improved.

[0098] The embodiments have been described with reference to specific examples. However, the embodiments are not limited to these specific examples. That is, those obtained by appropriately making design changes by those skilled in the art to these specific examples are also included in the scope of the embodiments as long as they have the features of the embodiments. Each element included in the above-described specific examples, and their arrangements, materials, conditions, shapes, sizes, etc. are not limited to the illustrated examples and can be changed as appropriate.

[0099] In addition, each element included in each of the above-described embodiments can be combined as much as technically possible, and those obtained by combining these are also included in the scope of the embodiments as long as they include the features of the embodiments. In addition, within the scope of the idea of the embodiments, those skilled in the art can come up with various modification examples and correction examples, and it is understood that those modification examples and correction examples also belong to the scope of the embodiments.

[0100] Some embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are within the scope of the invention and ​ Included in the gist, and included in the invention described in the claims and its equivalent scope .

Explanation of reference numerals

[0101] 101, 102, 103, 104, 105 ··· semiconductor devices 11 ··· first conductive member 12 ··· second conductive member 13 ··· third conductive member 11r ··· first peripheral region 11p ··· first exposed portion 12p ··· second exposed portion 12a ··· first region 12b ··· second region 12c ··· third region 12r ··· second peripheral region 21 ··· first conductive film 22 ··· second conductive film 23 ··· third conductive film 24 ··· fourth conductive film 31 ··· first solder material 32 ··· second solder material 33 ··· third solder material 40 ··· semiconductor element 50 ··· resin portion

Claims

1. a first conductive member, a first conductive film which is a barrier metal provided on a part of the first conductive member, a first solder material provided on the first conductive film, a semiconductor element provided on the first solder material, a second solder material provided on the semiconductor element, a second conductive member having a first region facing the semiconductor element through the second solder material, and 、 a resin portion for sealing a part of the first conductive member, the second conductive member, the first conductive film, the first solder material, the second solder material, and the semiconductor element; a first peripheral region located around the region where the semiconductor element overlaps the first conductive member and directly contacting the resin portion at least partially, a semiconductor device.

2. a first conductive member, a first conductive film provided on a part of the first conductive member and containing at least Ni, a first solder material provided on the first conductive film, a semiconductor element provided on the first solder material, a second solder material provided on the semiconductor element, a second conductive member having a first region facing the semiconductor element through the second solder material, and a resin portion for sealing a part of the first conductive member, the second conductive member, the first conductive film, the first solder material, the second solder material, and the semiconductor element; a first peripheral region located around the region where the semiconductor element overlaps the first conductive member and directly contacting the resin portion at least partially, 、 a semiconductor device.

3. The first conductive member has a first exposed portion exposed from the resin portion, and in the vicinity of the first exposed portion in the first peripheral region, the first peripheral region and the resin portion are in direct contact, The semiconductor device according to claim 1 or 2.

4. The first solder material contains at least Sn, The semiconductor device according to claim 1 or 2.

5. The first solder material contains Sn at 50% or more by mass percentage, The semiconductor device according to claim 4.

6. The first solder material contains at least one of Pb, Sb, Ni, Ag, Bi, Cu, or Zn, The semiconductor device according to claim 5.

7. The semiconductor device according to claim 1 or 2, further having a second conductive film formed at least partially between the first region and the second solder material and containing at least Ni.

8. The second conductive member has a second exposed portion exposed from the resin portion, ​ ​ ​ ​ ​ ​ ​ Provided between the second exposed portion of the second conductive member and the first region, and continuous with the first region a second region formed continuously; a third region formed continuously with the second exposed portion and spaced apart from the second region; a third solder material provided between the second region and the third region; a third conductive film provided on at least a part between the second region and the third solder material; a fourth conductive film provided on at least a part between the third region and the third solder material; further comprising the semiconductor device according to claim 7.

9. The second conductive film is formed continuously with the third conductive film from between the first region and the first solder material to between the second region and the third solder material. the semiconductor device according to claim 8.

10. The first conductive film contains a metal element having a smaller diffusion coefficient than the first conductive member. the semiconductor device according to claim 1 or 2.

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