Semiconductor device

By maintaining higher impurity concentrations at the pn junction interface, the semiconductor device stabilizes the pn junction depth and threshold voltage, addressing the variation issue in trench gate semiconductor devices.

JP2025102179APending Publication Date: 2025-07-08DENSO CORP +2
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Patent Information

Application Number
JP2023219479
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-12-26
Publication Date
2025-07-08

AI Technical Summary

Technical Problem

The variation in the depth of the pn junction interface between the body region and the source region in semiconductor devices with trench gates leads to increased variation in the threshold voltage, necessitating a solution to suppress this variation.

Method used

The concentration of second conductivity type impurities at the pn junction interface between the body and source regions is maintained higher than one-seventh of the peak concentration to stabilize the pn junction interface depth, thereby stabilizing the body region thickness and threshold voltage.

Benefits of technology

This approach effectively suppresses the variation in the threshold voltage of the semiconductor device by controlling the impurity concentration at the pn junction interface, ensuring consistent device performance.

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Abstract

To provide a technique for suppressing the variation in depth of a pn junction interface between a body region and a source region in order to suppress the variation in threshold voltage of a semiconductor device.SOLUTION: A concentration distribution of n-type impurities measured along a thickness direction of a semiconductor layer 10 at a depth including a source region 18 and a body region 16 from a first main surface 10a of the semiconductor layer 10 has at least one n-type peak concentration range 180a, 180b. The concentration of n-type impurities at the pn junction interface between the body region 16 and the source region 18 is higher than the concentration at which the n-type peak concentration of the n-type peak concentration range 180a closest to the body region 16 is attenuated to one-seventh.SELECTED DRAWING: Figure 1
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