Semiconductor module

Abstract

To provide a semiconductor module in which a power route and a signal route can be surely electrically insulated.SOLUTION: A semiconductor module 10 houses a semiconductor element 30 and a heat dissipation member 40 by a resin member 9. At least a part of the heat discharge member 40 is exposed to an external part from the resin member 9. A signal pad 35 of the semiconductor element 30 and a signal terminal 61 are connected by a flexible substrate as a wiring member 80. The wiring member 80 is housed in a resin member 20, and is a member softer than the signal terminal 61. The wiring member 80 includes: electric insulation resin layers 81 and 83; and a metal layer 82 supported by resin layers 81 and 83.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The disclosure in this specification relates to a semiconductor module.

Background Art

[0002] Patent Document 1 discloses a semiconductor module that houses a semiconductor element including a switching element. This semiconductor module includes a wiring sheet. The wiring sheet is formed of a flexible printed circuit board. The wiring sheet of Patent Document 1 includes a land portion that solders and connects an electrode and a terminal as a power path of the switching element. Further, the wiring sheet of Patent Document 1 includes a control wiring connected to a control electrode of the switching element. The description of the prior art document is incorporated by reference as an explanation of the technical elements in this specification.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The wiring sheet of Patent Document 1 has difficulty in electrical insulation between the power path and the control wiring. For this reason, it has been difficult to provide a semiconductor module that satisfies a practical level from the viewpoints of electrical insulation and size. From the above viewpoints, or other viewpoints not mentioned, further improvements are required for the semiconductor module.

[0005] One object to be disclosed is to provide a semiconductor module in which reliable electrical insulation between a power path and a signal path is provided.

Means for Solving the Problems

[0006] The semiconductor module disclosed herein includes a semiconductor element (30) having signal pads (35) for signal paths and power pads (33, 34) for power paths with power greater than that of the signal pads, a heat dissipation member (40) thermally joined to the semiconductor element (30), a resin member (20) that houses the semiconductor element so as to expose a part of the heat dissipation member, a metal signal terminal (61) disposed so as to be exposed from the resin member, and a wiring member (80) housed in the resin member, the wiring member being a member more flexible than the signal terminal and including an electrically insulating resin layer and a metal layer supported by the resin layer, the metal layer having a first joint (80a) connected to the signal pad and a second joint (80b) connected to the signal terminal. Further, joint members (71, 73) are provided for joining between the semiconductor element and the heat dissipation member and / or between the signal pad and the metal layer. The wiring member defines an opening surrounding the joint member and has a recess (86) communicating with the opening. The semiconductor module disclosed herein includes a semiconductor element (30) having signal pads (35) for signal paths and power pads (33, 34) for power paths with power greater than that of the signal pads, a heat dissipation member (40) thermally joined to the semiconductor element (30), a resin member (20) that houses the semiconductor element so as to expose a part of the heat dissipation member, a metal signal terminal (61) disposed so as to be exposed from the resin member, and a wiring member (80) housed in the resin member, the wiring member being a member more flexible than the signal terminal and including an electrically insulating resin layer and a metal layer supported by the resin layer, the metal layer having a first joint (80a) connected to the signal pad and a second joint (80b) connected to the signal terminal. The wiring member (B80) positions the semiconductor element and the heat dissipation member. The semiconductor module disclosed herein includes a semiconductor element (30) having signal pads (35) for signal paths and power pads (33, 34) for power paths with power greater than that of the signal pads, a heat dissipation member (40) thermally joined to the semiconductor element (30), a resin member (20) that houses the semiconductor element so as to expose a part of the heat dissipation member, a metal signal terminal (61) disposed so as to be exposed from the resin member, and a wiring member (80) that is housed in the resin member and is a member more flexible than the signal terminal and includes an electrically insulating resin layer and a metal layer supported by the resin layer, the metal layer having a first joint (80a) connected to the signal pad and a second joint (80b) connected to the signal terminal. Further, the semiconductor module includes a pair of power terminals (51a, 51b) electrically connected to the power pads, and the wiring member (C80) reaches between the pair of power terminals and is stacked so as to overlap the pair of power terminals on both sides of the wiring member.

[0007] The disclosed semiconductor module houses a semiconductor element inside a resin member. Further, the semiconductor module includes a metal signal terminal disposed so as to be exposed from the resin member. The signal pads of the semiconductor element and the signal terminal are connected by a wiring member inside the resin member. The wiring member is housed in the resin member. The wiring member is a member more flexible than the signal terminal. The wiring member includes an electrically insulating resin layer and a metal layer supported by the resin layer. The wiring member has a first joint where the metal layer is connected to the signal pad and a second joint where the metal layer is connected to the signal terminal. The semiconductor module provides high connection workability by including the signal terminal. Moreover, even inside the resin member, the connection workability of the signal path can be improved by the wiring member. The wiring member having an electrically insulating resin layer contributes to the electrical insulation between the power path and the signal path. As a result, a semiconductor module with reliable electrical insulation between the power path and the signal path is provided. In the present specification, the plurality of forms disclosed adopt different technical means to achieve their respective purposes. The claims and the reference numerals in parentheses described in this section exemplify the correspondence with the parts of the embodiments described later, and are not intended to limit the technical scope. The objects, features, and effects disclosed in this specification will become clearer by referring to the subsequent detailed description and the attached drawings.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Figure 27

Figure 28

Figure 29

Figure 30

Figure 31

Figure 32

Figure 33

Figure 34

Figure 35

Figure 36

Figure 37

Figure 38

Embodiments for Carrying Out the Invention

[0009] A plurality of embodiments will be described with reference to the drawings. In a plurality of embodiments, functionally and / or structurally, corresponding parts and / or associated parts may be assigned the same reference numerals, or reference numerals that differ in the hundreds place or more. For corresponding parts and / or associated parts, the description of other embodiments can be referred to.

[0010] First Embodiment In FIG. 1, the electric system 1 includes a power supply device 2, a rotating electric machine (RM) 3, and a power conversion circuit 4. The power supply device 2 is a rechargeable DC power supply. The power supply device 2 may be provided by a DC power supply including a lithium-ion battery, a fuel cell system, or a solar cell system. Also, the power supply device 2 is provided by a power generation system that generates electricity using a power source such as an internal combustion engine. The rotating electric machine 3 is provided by an electric motor or a motor generator. The rotating electric machine 3 is a polyphase AC rotating electric machine. In the illustrated example, the rotating electric machine 3 is a three-phase rotating electric machine. The rotating electric machine 3 is used as a power source for a moving body or a power source for a machine such as a generator or a water pump. Here, the moving body includes a vehicle, an aircraft, a ship, a passenger amusement device, and a vehicle simulation device.

[0011] The power conversion circuit 4 is electrically connected to the power supply device 2 and the rotating electrical machine 3. The power conversion circuit 4 converts at least one element of power between the power supply device 2 and the rotating electrical machine 3. The elements of power include the direction of current, direct / alternating current, voltage, current, phase, and the like. The power conversion circuit 4 is capable of operating in a power running direction of supplying power from the power supply device 2 to the rotating electrical machine 3 and / or a regeneration direction of charging power from the rotating electrical machine 3 to the power supply device 2. In this embodiment, the power conversion circuit 4 provides at least bidirectional voltage conversion and bidirectional direct / alternating current conversion.

[0012] The power conversion circuit 4 includes a converter circuit 5, a smoothing capacitor 6, an inverter circuit 7, and a control device 8. The power conversion circuit 4 can further include an inductive element and / or a capacitive element that provide a filter circuit. The converter circuit 5 is electrically disposed between the power supply device 2 and the rotating electrical machine 3. The converter circuit 5 provides bidirectional voltage conversion. The converter circuit 5 may step up or step down the voltage output by the power supply device 2 and output it to the outside. The converter circuit 5 steps up or steps down the voltage supplied from the outside and supplies it to the power supply device 2. The inverter circuit 7 is electrically disposed between the power supply device 2 and the rotating electrical machine 3. The inverter circuit 7 is electrically disposed between the converter circuit 5 and the rotating electrical machine 3. The inverter circuit 7 provides bidirectional direct / alternating current conversion. When the inverter circuit 7 supplies power from the power supply device 2 to the rotating electrical machine 3, it provides conversion from direct current to alternating current. When the inverter circuit 7 supplies power from the rotating electrical machine to the power supply device 23, it provides conversion from alternating current to direct current. The smoothing capacitor 6 is disposed between the converter circuit 5 and the inverter circuit 7. The smoothing capacitor 6 provides a part of a filter circuit that smoothes direct current power.

[0013] The inverter circuit 7 includes a plurality of switching elements 10 (SW elements 10), a plurality of power lines 50, and a plurality of signal lines 60. The plurality of SW elements 10 includes, for example, SW elements 11 and 12 for the U phase, SW elements 13 and 14 for the V phase, and SW elements 15 and 16 for the W phase. The plurality of SW elements 10, together with the power lines 50, form a multiphase bridge circuit. The multiphase bridge circuit forms a plurality of switching arms 18 corresponding to the number of the plurality of phases. For example, the switching arm of the U phase includes an SW element 11 providing an upper arm and an SW element 12 providing a lower arm. The switching arm of the V phase includes an SW element 13 providing an upper arm and an SW element 14 providing a lower arm. The switching arm of the W phase includes an SW element 15 providing an upper arm and an SW element 16 providing a lower arm.

[0014] The plurality of power lines 50 includes a positive line 52 and a negative line 54. The positive line 52 and the negative line 54 are also called a pair of DC buses. Further, the power lines 50 include a connection line 56 and a phase line 58. The connection line 56 connects an SW element providing an upper arm and an SW element providing a lower arm. The phase line 58 connects the connection line 56 and one phase winding of the rotating electrical machine 3. Therefore, the inverter circuit 7 includes a plurality of switching arms 18 arranged between a pair of DC buses. The plurality of signal lines 60 are electrically connected to each of the plurality of SW elements 10. The signal lines 60 may include drive signal lines for switching the SW elements 10 and a plurality of detection signal lines such as current values and temperatures.

[0015] The converter circuit 5 may also include a switching arm. In this case, the converter circuit 5 is configured as a chopper circuit including an inductance element.

[0016] The plurality of SW elements 10 have the same or similar configurations to each other. One SW element 10 includes a semiconductor element 30. The semiconductor element 30 is a semiconductor that is currently or will be available, such as made of Si or SiC. The semiconductor element 30 includes a transistor element 31 and a diode element 32. The transistor element 31 is an element that can be switched and controlled in response to a control signal, which is currently or will be available, such as an IGBT element (Insulated-Gate Bipolar Transistor) or a MOS-FET element (Metal-Oxide-Semiconductor Field-Effect Transistor). The diode element 32 is an anti-parallel diode. One SW element 10 may include one transistor element or a plurality of transistor elements connected in series and / or in parallel.

[0017] One SW element 10 is also called one semiconductor module 10 or a semiconductor package. The semiconductor module 10 is provided by encapsulating at least one SW element 10 with a resin member 20 described later. The semiconductor module 10 may be provided by encapsulating one switching arm 18 with the resin member 20. In this case, the semiconductor module 10 has a plurality of signal terminals exposed to the outside, a pair of power terminals exposed to the outside, and one power terminal providing the phase line 58. Further, one semiconductor module 10 may accommodate a plurality of switching arms 18.

[0018] The control device 8 is constituted by an electrical circuit. The control device 8 controls the converter circuit 5 and the inverter circuit 7. The control device 8 is electrically connected to the converter circuit 5 and the inverter circuit 7. The control device 8 and the inverter circuit 7 are connected by a plurality of signal lines 60. The control device 8 generates and outputs at least a control signal for controlling the inverter circuit 7.

[0019] The control device 8 in this specification may also be referred to as an electronic control unit (ECU). The control device 8 or the control system is provided by (a) a plurality of algorithms as logic in the form of if-then-else, or (b) a learned model tuned by machine learning, such as an algorithm as a neural network.

[0020] The control device 8 is provided by a control system including at least one computer. The control system may include a plurality of computers linked by a data communication device. The computer includes at least one processor (hardware processor) that is hardware. The hardware processor can be provided by the following (i), (ii), or (iii).

[0021] (i) The hardware processor may be at least one processor core 8a (CPU) that executes a program stored in at least one memory 8b (MMR). In this case, the computer is provided by at least one memory and at least one processor core. The processor core is called a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), a RISC-CPU, etc. The memory is also called a storage medium. The memory is a non-transitory and physical storage medium that non-temporarily stores "programs and / or data" readable by the processor. The storage medium is provided by a semiconductor memory, a magnetic disk, an optical disk, etc. The program may circulate by itself or as a storage medium in which the program is stored.

[0022] (ii) The hardware processor may be a hardware logic circuit. In this case, the computer is provided by a digital circuit including a number of programmed logic units (gate circuits). The digital circuit is also called a logic circuit array, for example, an ASIC (Application-Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), a SoC (System on a Chip), a PGA (Programmable Gate Array), a CPLD (Complex Programmable Logic Device), etc. The digital circuit may be provided with a memory storing a program and / or data. The computer may be provided by an analog circuit. The computer may be provided by a combination of a digital circuit and an analog circuit.

[0023] (iii) The hardware processor may be a combination of (i) and (ii) above. (i) and (ii) are arranged on different chips or on a common chip. In these cases, the part of (ii) is also called an accelerator.

[0024] The control device, the signal source, and the controlled object provide various elements. At least some of these elements can be called blocks, modules, or sections. Furthermore, the elements included in the control system are called functional means only when intended.

[0025] Hereinafter, with reference to a plurality of drawings, the semiconductor module 10 will be described in detail. In the drawings referred to hereinafter and in the description of the specification, dimensions such as the thickness, width, height, and length of a plurality of members are schematically illustrated and described in order to assist in understanding the relative arrangement and mutual positional relationship of the plurality of members. The thickness of the first bonding member 71 in the X direction to be described later can be set to about 0.2 millimeters as a non-limiting example. The dimensions of each part should be understood as having a numerical range that is understandable as obvious to those skilled in the art belonging to the current and future semiconductor technology fields. Also, in some of the drawings, the three-axis directions are illustrated. The X direction is called the thickness direction, the Y direction is called the width direction, and the Z direction is called the height direction. These designations do not reflect the posture of the semiconductor module 10 in the usage state. These designations should be understood as being for convenience.

[0026] In FIG. 2, the semiconductor module 10 has a flat plate-like outer shape. The outer shape is mainly defined by the resin member 20. The resin member 20 is a member obtained by molding a resin material in a molten state into a required shape by a mold and then curing it again. A non-limiting example of the resin member 20 is an epoxy resin. The semiconductor module 10 seals the semiconductor element 30 with the resin member 20. The semiconductor element 30 is a semiconductor chip. The semiconductor element 30 is a plate-like member.

[0027] The semiconductor module 10 has at least a pair of power terminals 51 exposed outside the resin member 20. The pair of power terminals 51 includes a P terminal on the positive electrode side and an N terminal on the negative electrode side. The semiconductor module 10 has a plurality of signal terminals 61 exposed outside the resin member 20. In addition to the pair of power terminals 51, the semiconductor module 10 may include power terminals as the input / output ends of the switching arm. The power terminals 51 and the signal terminals 61 can be clearly distinguished by the difference in the power flowing through them. The power terminals 51 conduct the power of the rotating electrical machine 3 as the control object. On the other hand, the signal terminals 61 are the control signals of the semiconductor element 30 and the transistor element 31, or the power at the signal level of the control device 8.

[0028] The power terminal 51 and the signal terminal 61 are partially embedded inside the resin member 20, and the remaining portions are exposed outside the resin member 20. The power terminal 51 is provided by a metal plate material such as copper or iron, for example. The signal terminal 61 is provided by a metal plate material such as copper or iron, for example. The power terminal 51 and the signal terminal 61 are provided by a metal plate called a so-called lead frame. The power terminal 51 and the signal terminal 61 extend from any one of the outer peripheral edge portions of the semiconductor module 10 and the four side surfaces of the outer periphery when viewed as a plate shape. The power terminal 51 and the signal terminal 61 have a hardness to maintain their shapes in a normal temperature environment.

[0029] Furthermore, the semiconductor module 10 has a heat dissipation member 40 exposed outside the resin member 20. The heat dissipation member 40 is thermally coupled to the semiconductor element 30. The semiconductor module 10 is air-cooled or liquid-cooled. The semiconductor module 10 has at least one heat dissipation member 40 for dissipating the heat of the semiconductor element 30. The semiconductor module 10 may be arranged such that the exposed surface of the heat dissipation member 40 is in contact with a coolant pipe. In this case, the semiconductor module 10 dissipates heat indirectly from the heat dissipation member 40 to the coolant pipe. The semiconductor module 10 may be arranged inside the passage of the coolant. In this case, the semiconductor module 10 dissipates heat directly from the contact surface with the coolant (including the heat dissipation member 40) to the coolant.

[0030] The heat dissipation member 40 has two heat dissipation members 41 and 42 exposed on both sides of the semiconductor module 10. The heat dissipation member 41 may be referred to as the first heat dissipation member. The heat dissipation member 42 may be referred to as the second heat dissipation member. In this case, the semiconductor module 10 is called a double-sided heat dissipation package. The semiconductor module 10 may be arranged such that the exposed surface of the first heat dissipation member 41 contacts one coolant pipe and the exposed surface of the second heat dissipation member 42 contacts the other coolant pipe between the two coolant pipes. The semiconductor module 10 dissipates heat indirectly from one plate-like surface of the semiconductor element 30 to the coolant pipe through the first heat dissipation member 41. The semiconductor module 10 dissipates heat indirectly from the other plate-like surface of the semiconductor element 30 to the coolant pipe through the second heat dissipation member 42. The semiconductor module 10 may be arranged in the coolant passage. In this case, the semiconductor module 10 dissipates heat directly to the coolant from the contact surface with the coolant (including the two heat dissipation members 41 and 42).

[0031] The semiconductor module 10 includes a wiring member 80. The wiring member 80 provides at least one signal path. The wiring member 80 is also called a wiring sheet. The wiring member 80 is housed in the resin member 20. The wiring member 80 is plate-shaped. The wiring member 80 includes an electrically insulating resin layer and a metal layer supported by the resin layer. The wiring member 80 includes one metal layer or a plurality of metal layers. The thickness of the wiring member 80 is equal to or less than the thickness of the first joining member 71. The wiring member 80 extends substantially parallel along the Y-Z plane so as to intersect the thickness direction X. The wiring member 80 is a member more flexible than the signal terminal 61. Due to its flexibility, the wiring member 80 may be arranged in a slightly bent shape.

[0032] The wiring member 80 electrically connects the signal pads of the semiconductor element 30 and the signal terminals 61. The wiring member 80 is positioned and fixed by the bonding at the joints 80a and 80b and the contact with the resin member 20. In the illustrated example, the wiring member 80 is completely embedded in the resin member 20 and is not exposed to the outside. The wiring member 80 may be provided by a flexible printed circuit board (FPC). The wiring member 80 may be provided by a single-sided FPC, a double-sided FPC, or a multilayer FPC. The resin layer can be provided by, as a non-limiting example, a polyimide resin, a liquid crystal polymer resin (LCP), or the like. The metal layer can be provided by, as a non-limiting example, a copper foil, a silver paste, or the like.

[0033] The wiring member 80 enables various arrangements such as approaching, dispersing, and detouring with respect to one metal layer. Also, the wiring member 80 enables various variations with respect to the area of the metal layer. Furthermore, the resin layer provides stable electrical insulation between the electrical connection provided by the wiring member 80 and other adjacent members. In a typical example, one wiring member 80 includes a plurality of metal layers. The plurality of metal layers provide a plurality of electrical connections between the plurality of signal pads and the plurality of signal terminals 61. In this case, the wiring member 80 enables shortening of the process time in the manufacturing stage for providing a plurality of electrical connections. In addition, in this case, the wiring member 80 provides stable electrical insulation between the plurality of electrical connections. The wiring member 80 enables the metal layers to be arranged to pass through various paths inside the wiring member 80. The wiring member 80 enables various arrangements such as crossing, connecting, and branching with respect to the plurality of metal layers. Furthermore, the positions of the plurality of metal layers are fixedly held by the resin layer relative to each other. As a result, compared with wire bonding, the variation in the mutual coupling inductance between signal paths is small. As a result, the wiring member 80 contributes to the stable driving of the semiconductor element 30.

[0034] In FIG. 3, a cross section of the semiconductor module 10 in the X-Z plane is shown. In the semiconductor module 10, the resin member 20 houses the semiconductor element 30. The semiconductor element 30 is joined to the heat dissipation member 40 by the joining member 70 on both of its surfaces. The joining member 70 has a flat polygonal columnar shape. The joining member 70 has a columnar shape with a slightly trapezoidal cross section. This joining provides both electrical connection and thermal coupling. The semiconductor element 30 has a power pad 33 on the first surface which is the upper surface in the figure. The power pad 33 provides a main power path controlled by this semiconductor element 30. The power pad 33 is joined to the first heat dissipation member 41 by the first joining member 71. The semiconductor element 30 has a power pad 34 on the second surface which is the lower surface in the figure. The power pad 34 provides a main power path controlled by this semiconductor element 30. The power pad 34 is joined to the second heat dissipation member 42 by the second joining member 72. The power pads 33, 34 may be called by names indicating their uses such as power electrodes, collector electrodes, emitter electrodes, etc. The joining member 70 can be provided by a material called so-called solder.

[0035] The heat dissipation member 40 has a flat plate-like shape. The heat dissipation member 40 provides a high thermal conductivity (accurately, heat transfer rate) between its two surfaces. The heat dissipation member 40 is also called a terminal member that provides a power path. The heat dissipation member 40 provides high electrical insulation between its two surfaces. The heat dissipation member 40 is also called an electrically insulating substrate. The heat dissipation member 40 includes an electrically insulating resin plate disposed between a pair of metal plates.

[0036] The first heat dissipation member 41 includes an external metal plate 43 that provides a heat dissipation surface and an internal metal plate 45 that provides a joining surface. The internal metal plate 45 provides a part of the power path. The internal metal plate 45 is electrically joined to one terminal that provides the power line 50. At least a part of the surface of the external metal plate 43 is exposed to the outside from the resin member 20. One surface of the external metal plate 43 provides a heat dissipation surface. The first heat dissipation member 41 includes a resin plate 44 as an electrically insulating layer disposed between the external metal plate 43 and the internal metal plate 45.

[0037] The second heat radiating member 42 includes an external metal plate 46 that provides a heat radiating surface and an internal metal plate 48 that provides a bonding surface. The internal metal plate 48 provides a part of the power path. The internal metal plate 48 is electrically joined to one terminal that provides the power line 50. At least a part of the surface of the external metal plate 46 is exposed to the outside from the resin member 20. One surface of the external metal plate 46 provides a heat radiating surface. The second heat radiating member 42 includes a resin plate 47 as an electrical insulating layer disposed between the external metal plate 46 and the internal metal plate 48.

[0038] The semiconductor element 30 has signal pads 35 on the first surface. The signal pads 35 are disposed at the outer edge of the semiconductor element 30 so as to be able to form power pads 33 having a relatively large area on the first surface. The signal pads 35 have a current-carrying area that is clearly smaller than those of the power pads 33 and 34. In a typical example, the semiconductor element 30 has a plurality of signal pads 35. The signal pads 35 may be called by names indicating uses such as signal electrodes, sensor electrodes, and gate electrodes.

[0039] The wiring member 80 is positioned away from the heat radiating member 40. The wiring member 80 may be disposed in contact with the surface of the semiconductor element 30. The signal pad 35 and the signal terminal 61 are electrically connected by the wiring member 80. The wiring member 80 is disposed inside the resin member 20 so as to bridge between the signal pad 35 and the signal terminal 61. The wiring member 80 has a resin layer 81 made of an electrically insulating resin material. The wiring member 80 has a resin layer 83 made of an electrically insulating resin material. The resin layer 81 and the resin layer 83 may be made of a continuous resin material. The wiring member 80 may be coated with an electrically insulating insulating film outside the resin layers 81 and 83. The insulating film contributes to enhancing the electrical insulation between the wiring member 80 and other components.

[0040] The wiring member 80 has a metal layer 82 disposed between a resin layer 81 and a resin layer 83. The metal layer 82 is arranged in a form that can be called linear or ribbon-like in the wiring member 80. The metal layer 82 is made of metal. The metal layer 82 may also be called an energization member or a signal line for signal transmission. The metal layer 82 is continuously arranged from one end to the other end.

[0041] The wiring member 80 includes a first joint portion 80a for enabling electrical connection between the metal layer 82 and the signal pad 35. The second joint portion 80b is provided at one end of the metal layer 82. The wiring member 80 has a second joint portion 80b for enabling electrical connection between the metal layer 82 and the signal terminal 61. The second joint portion 80b is provided at the other end of the metal layer 82. The first joint portion 80a and the second joint portion 80b are partitioned by window portions formed in the resin layers 81 and 83. The window portions expose a part of the metal layer 82 from the resin layers 81 and 83. The first joint portion 80a and the second joint portion 80b may be regarded as a part of the metal layer 82. In the first joint portion 80a, the signal pad 35 of the semiconductor element 30 and one end of the metal layer 82 are electrically connected by a third joint member 73. In the second joint portion 80b, the other end of the metal layer 82 and the signal terminal 61 are electrically connected by a fourth joint member 74.

[0042] FIG. 4 is a partial cross-sectional view taken along line IV-IV of FIG. 3 with the resin member 20 removed. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are arranged in a stacked manner with respect to the X direction. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are in a parallel relationship with each other. The heat dissipation member 40 and the semiconductor element 30 are arranged parallel to each other so as to overlap. The semiconductor element 30 and the wiring member 80 are arranged parallel to each other so as to overlap only at the first joint portion 80a. The wiring member 80 and the signal terminal 61 are arranged parallel to each other so as to overlap only at the second joint portion 80b. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are plate-shaped. The heat dissipation member 40, the semiconductor element 30, the wiring member 80, and the signal terminal 61 are arranged such that the surfaces as plates are parallel to the Y-Z plane. Therefore, the signal terminal 61 extends from the side surface of the resin member 20 in parallel with the Y-Z plane.

[0043] The semiconductor element 30 is disposed and joined on the second heat dissipation member 42. The power pad 33 of the semiconductor element 30 is joined to a first heat dissipation member 41 (not shown) by a first joining member 71. The semiconductor element 30 has a plurality of signal pads 35. In the illustration, the power pad 33 and the signal pads 35 are represented by a rectangular shape. The pads of the semiconductor element 30 can be provided in various shapes such as circular, elliptical, rounded polygonal, and polygonal.

[0044] The plurality of signal pads 35 are arranged apart from each other at the outer edge portion of the upper surface of the semiconductor element 30. The plurality of signal pads 35 are arranged in a row along the outer edge portion. The plurality of signal pads 35 may be arranged at the corner portions of the upper surface of the semiconductor element 30. The plurality of signal pads 35 may be dispersedly arranged on the upper surface of the semiconductor element 30 so as to form a plurality of groups. The plurality of signal pads 35 are arranged with a pad pitch Pp. The pad pitch Pp is the minimum pad pitch among the plurality of signal pads 35. The plurality of signal pads 35 are arranged within a range of width Wp.

[0045] The plurality of signal terminals 61 have a shape that can be called an elongated rod shape or a ribbon shape. The plurality of signal terminals 61 are arranged parallel to each other. One ends of the plurality of signal terminals 61 are arranged aligned in a straight line. The plurality of signal terminals 61 may have different thicknesses. The plurality of signal terminals 61 may have different lengths. The plurality of signal terminals 61 are arranged with a terminal pitch Pi. The terminal pitch Pi is the minimum terminal pitch among the plurality of signal terminals 61. The plurality of signal terminals 61 are arranged within a range of width Wi.

[0046] The terminal pitch Pi is equal to or greater than the pad pitch Pp (Pi≧Pp). In the illustrated example, the terminal pitch Pi is greater than the pad pitch Pp (Pi>Pp). The terminal pitch Pi and the pad pitch Pp are different. There is a difference Dp (Dp = Pi - Pp) between the terminal pitch Pi and the pad pitch Pp. The terminal pitch Pi and the pad pitch Pp may be equal.

[0047] The width Wi is equal to or greater than the width Wp (Wi≧Wp). In the illustrated example, the width Wi is greater than the width Wp (Wi>Wp). The width Wi and the width Wp are different. There is a difference Dw (Dw = Wi - Wp) between the width Wi and the width Wp. The width Wi and the width Wp may be equal.

[0048] The wiring member 80 is arranged between the signal pad 35 and the signal terminal 61. The wiring member 80 is arranged to bridge the plurality of signal pads 35 and the plurality of signal terminals 61. The wiring member 80 has resin layers 81, 83 and a metal layer 82. The wiring member 80 has a plurality of metal layers 82 that are electrically independent of each other. Each of the plurality of metal layers 82 electrically connects each of the plurality of signal pads 35 and each of the plurality of signal terminals 61. The plurality of metal layers 82 are insulated from other members by the resin layers 81, 83 except at the joint portions 80a, 80b.

[0049] The wiring member 80 includes a first joint portion 80a for connecting the metal layer 82 and the signal pad 35. The first joint portion 80a is formed by exposing the metal layer 82 from the resin layer 81 and / or the resin layer 83. The first joint portion 80a is formed by a window portion partitioned in the resin layer 81 and / or the resin layer 83 and an exposed portion of the metal layer 82 exposed in the window portion. The window portion is an opening with a predetermined area in the resin layer 81 and / or the resin layer 83. The exposed portion has an area and shape that can be joined to the signal pad 35.

[0050] The wiring member 80 includes a second joint portion 80b for connecting the metal layer 82 and the signal terminal 61. The second joint portion 80b is formed by exposing the metal layer 82 from the resin layer 81 and / or the resin layer 83. The second joint portion 80b is formed by a window portion partitioned in the resin layer 81 and / or the resin layer 83 and an exposed portion of the metal layer 82 exposed in the window portion. The window portion is an opening with a predetermined area in the resin layer 81 and / or the resin layer 83. The exposed portion has an area and shape that can be joined to the signal terminal 61.

[0051] The laying paths of the plurality of metal layers 82 in the wiring member 80 are set to provide electrical connection while allowing the difference Dp and / or the difference Dw. The width in which the plurality of metal layers 82 are laid is wider on the signal terminal 61 side than the width Wp on the signal pad 35 side. The shape of the wiring member 80 is also set to provide electrical connection while allowing the difference Dp and / or the difference Dw. The width of the wiring member 80 itself is wider at the end on the signal terminal 61 side than the width at the end on the signal pad 35 side.

[0052] The shapes of the plurality of metal layers 82 in the Y-Z plane are substantially parallel to each other. However, the shapes of the plurality of metal layers 82 in the Y-Z plane are formed so as to absorb the difference between the width Wi and the width Wp by the change in the distance between the plurality of metal layers 82. The shapes of the plurality of metal layers 82 are set to change the distance between them. The distance between the plurality of metal layers 82 can also be referred to as the metal layer pitch. The metal layer pitch is equal to the terminal pitch Pi on the signal terminal 61 side. The metal layer pitch is equal to the pad pitch Pp on the signal pad side. The metal layer pitch decreases from the terminal pitch Pi toward the pad pitch Pp. In the illustrated example, the metal layer pitch changes stepwise. Instead of this, the metal layer pitch may change gradually.

[0053] The manufacturing method of the semiconductor module 10 has a preparation step of preparing a plurality of components. The preparation step is a step of preparing the main components. The preparation step includes a step of preparing the material of the resin member 20 before molding, the semiconductor element 30, the heat dissipation member 40, the lead frame providing the power terminal 51, the lead frame providing the signal terminal 61, the joining member 70, and the wiring member 80.

[0054] The manufacturing method of the semiconductor module 10 has a joining step of joining a plurality of components electrically and / or thermomechanically. The joining step includes a semiconductor joining step of joining the heat dissipation member 40 and the semiconductor element 30 by the joining members 71 and 72. The semiconductor joining step includes a first joining member step of joining the first heat dissipation member 41 and the semiconductor element 30 by the first joining member 71. The semiconductor joining step includes a second joining member step of joining the second heat dissipation member 42 and the semiconductor element 30 by the second joining member 72. The first joining member step and the second joining member step may be such that the first joining member step is performed after the second joining member step. The first joining member step and the second joining member step may be such that the second joining member step is performed after the first joining member step. The first joining member step and the second joining member step may be performed simultaneously.

[0055] The joining process includes a power terminal joining process of joining the heat dissipation member 40 and the power terminal 51. The joining process includes a signal path joining process of connecting the signal pad 35 and the signal terminal 61 via the wiring member 80. The signal path joining process includes a third joining member process of joining the signal pad 35 and the wiring member 80 with the third joining member 73. The signal path joining process includes a fourth joining member process of joining the signal terminal 61 and the wiring member 80 with the fourth joining member 74. The third joining member process and the fourth joining member process can be carried out simultaneously. The third joining member process and the fourth joining member process may be carried out in numerical order or in the reverse order of numerical order. The semiconductor joining process and the signal path joining process can be carried out simultaneously. Further, simultaneously with these, the power terminal joining process may be carried out.

[0056] The semiconductor joining process, the power terminal joining process, and the signal path joining process can be carried out, for example, by a temporary heating process of melting and then re-hardening the solder when the solder is used as the joining member 70. For example, at least the second joining member process and the third joining member process, and / or at least the second joining member process and the fourth joining member process may be carried out simultaneously by a temporary heating process. In this case, in the placement process preceding the heating process, the second heat dissipation member 42, the second joining member 72, and the semiconductor element 30 are stacked and arranged. In the placement process, the signal pad 35, the third joining member 73, and the first joining portion 80a are stacked and arranged. Further, in the placement process, the signal terminal 61, the fourth joining member 74, and the second joining portion 80b are stacked and arranged. In the heating process, by melting the joining members 72, 73, 74, the joining of the semiconductor element 30 and the second heat dissipation member 42 and the joining of the wiring member 80 can be carried out simultaneously. Note that in the placement process, the semiconductor element 30, the first joining member 71, and the first heat dissipation member 41 may be stacked and arranged. In this case, in the heating process, the joining members 71, 72, 73, 74 are melted simultaneously. The joining process is executed so as to join all the joining portions. The joining process includes a hardening process of hardening the joining member. By the joining process, a plurality of members are joined.

[0057] The manufacturing method of the semiconductor module 10 has a resin molding process of wrapping an intermediate product joined by a joining process with a resin member 20. The resin molding process is carried out so as to provide intended electrical insulation by the resin member penetrating into the gaps between the members of the intermediate product. The resin molding process is a process of molding the resin member 20 so as to expose the heat dissipation member 40, the power terminal 51, and the signal terminal 61 and cover the semiconductor element 30. The resin molding process includes an arranging process of arranging a plurality of parts after joining in a mold. The resin molding process includes an injection process of injecting the molten resin member 20 into the mold. The resin molding process includes a curing process of curing the molten resin member 20. The resin molding process includes a taking-out process of taking out the molded product from the mold. The resin molding process further includes a finishing process including a process of cutting the lead frame and a process of removing resin burrs.

[0058] According to the embodiment described above, an electrical connection between the signal pad 35 of the semiconductor element 30 and the signal terminal 61 is provided by the wiring member 80. The wiring member 80 enables an easy joining process. Also, the wiring member 80 itself has electrical insulation by the resin layers 81, 83. Therefore, the wiring member 80 improves the reliability of electrical insulation between the metal layer 82 and other members. When the wiring member 80 has a plurality of metal layers 82, the reliability of electrical insulation between the plurality of metal layers 82 is improved.

[0059] Furthermore, the wiring member 80 is wrapped, fixed, and supported by the resin member 20. Therefore, the intrusion of foreign matter from the outside to the inside of the semiconductor module 10 is blocked. Foreign matter includes liquids such as water and corrosive gases. In other words, the wiring member 80 and the resin member 20 provide high sealing performance.

[0060] Second Embodiment This embodiment is a modification of the preceding embodiment as the basic form. In the above embodiment, the plurality of signal pads 35 are dispersedly arranged along one short side of the semiconductor element 30. Instead of this, in this embodiment, a plurality of signal pads 235 intensively arranged in a part of the semiconductor element 30 are adopted. For the semiconductor element 30, it is desirable that the active region that exhibits activity as a switching element is relatively large. The relatively large active region enables control of a large current. This embodiment provides a semiconductor element 30 that can make the active region relatively large.

[0061] FIG. 5 shows a perspective view of a plurality of components in a state where the resin member 20 and the first heat dissipation member 41 are removed. The semiconductor element 30 is plate-shaped with a rectangular surface. The semiconductor element 30 is substantially square. The semiconductor element 30 includes a plurality of signal pads 235 in a rectangular region near the corners of the outer edge portion on the surface. The plurality of signal pads 235 are intensively arranged in the rectangular region. The plurality of signal pads 235 are arranged in a row along the outer edge of the surface. The plurality of signal pads 235 are arranged with a pad pitch Pp2 in the column direction. The pad pitch Pp2 is smaller than the pad pitch Pp of the preceding embodiment. The pad pitch Pp2 is set to a value that can be called fine compared to the size of the semiconductor element 30.

[0062] The wiring member 80 has a plurality of first joints 80a and a plurality of second joints 80b. Each of the plurality of first joints 80a is joined to each of the plurality of signal pads 235. Therefore, the plurality of signal pads 35 are arranged to form a pad pitch Pp2 in the column direction. The plurality of second joints 80b are arranged to form a terminal pitch Pi in the column direction. Each of the plurality of second joints 80b is joined to each of the plurality of signal terminals 61. The plurality of metal layers 82 are arranged to expand the fine pad pitch Pp2 to the terminal pitch Pi. The plurality of metal layers 82 are laid so as to meander between the first joint 80a and the second joint 80b.

[0063] The wiring member 80 has an outer edge portion 284 disposed along the outer edge of the surface of the semiconductor element 30 where a plurality of signal pads 235 are not arranged. The outer edge portion 284 is arranged along the longitudinal direction of the outer edge. The outer edge portion 284 is disposed on the outer edge portions of three sides out of the four-side outer edge of the surface of the semiconductor element 30 where the signal pads 235 are not arranged. As a result, the wiring member 80 is arranged to surround the power pad 33 for flowing the main current on the surface of the semiconductor element 30. In other words, the wiring member 80 is arranged to surround the first bonding member 71. The wiring member 80 defines an opening 285. The outer edge portion 284 is formed only by the resin layer 81 or the resin layer 83. The outer edge portion 284 may include a metal layer 82. The outer edge portion 284 facilitates the positioning of the wiring member 80 with respect to the semiconductor element 30. As a result, even with a fine pad pitch Pp2, the plurality of signal pads 235 and the plurality of first joints 80a can be accurately and easily positioned. The outer edge portion 284 improves the electrical insulation at the outer periphery of the semiconductor element 30. The wiring member 80 improves the electrical insulation between a member such as an electrode as a power path of the semiconductor element 30 and a part such as an electrode as a signal path. The outer edge portion 284 may define the shape of the first bonding member 71.

[0064] The fine pad pitch Pp2 enables the area occupied by the plurality of signal pads 235 to be relatively small. As a result, the area occupied by the bonding member 70 in the semiconductor element 30 and / or the area of the active region for passing current can be relatively increased. In the illustrated example, the active region extends substantially over the range where the first bonding member 71 is disposed. The active region extends so as to be adjacent to all four sides of the semiconductor element 30. One side of the semiconductor element 30 is shared by the range occupied by the plurality of signal pads 235 and the range occupied by the active region. The range occupied by the plurality of signal pads 235 is 2 / 3 or less, or 1 / 2 or less of one side of the semiconductor element 30. The fine pad pitch Pp2, from one viewpoint, enables suppression of the current density and / or improvement of the heat transfer property due to an increase in the area of the bonding member 70 on the surface of the semiconductor element 30. Also, from another viewpoint, an increase in the size of the active region in the semiconductor element 30 enables suppression of the size of the semiconductor element 30 and / or cost reduction due to suppression of the element size.

[0065] Third Embodiment This embodiment is a modified example based on the preceding embodiment. In the above embodiment, one semiconductor module 10 includes one semiconductor element 30. Instead, one semiconductor module 10 can include two or more semiconductor elements. This embodiment is an example in the case of including a plurality of semiconductor elements. This embodiment provides a semiconductor module 10 that houses a plurality of semiconductor elements 30 arranged in parallel or in series.

[0066] In FIG. 6, in the semiconductor module 10, two semiconductor elements 30a and 30b are stacked with respect to the second heat radiating member 42. The two semiconductor elements 30a and 30b have the same shape or similar shapes. The two semiconductor elements 30a and 30b are arranged rotationally symmetrically on the second heat radiating member 42. In this embodiment, the two semiconductor elements 30a and 30b are arranged in parallel in the power path. The semiconductor element 30a has a power pad 33a and a plurality of signal pads 35a. The semiconductor element 30a and the bonding member 71a are stacked. The semiconductor element 30b has a power pad 33b and a plurality of signal pads 35b. The semiconductor element 30b and the bonding member 71b are stacked.

[0067] The two semiconductor elements 30a and 30b may be arranged in series in the power path. For example, one of the semiconductor elements 30a and 30b may be an upper arm, and the other of the semiconductor elements 30a and 30b may be a lower arm. In this case, one semiconductor module 10 provides one switching arm 18.

[0068] The wiring member 80 is provided by the wiring member 380. The wiring member 380 includes a plurality of first joints 80a for the semiconductor element 30a. The wiring member 380 includes a plurality of first joints 80a for the semiconductor element 30b. Further, the wiring member 380 includes a common second joint 80b for the plurality of semiconductor elements 30a and 30b. In this embodiment, the plurality of metal layers 82 have an independent metal layer 382a and a common metal layer 382c. The independent metal layer 382a is joined to only one of the plurality of signal pads 35a and 35b. The common metal layer 382c is commonly joined to one signal pad 35a of the semiconductor element 30a and one signal pad 35b of the semiconductor element 30b. The metal layers 382a and 382c are joined to the signal terminal 61 at the second joint 80b.

[0069] The plurality of signal terminals 61 includes dedicated signal terminals 61a for only the semiconductor element 30a, dedicated signal terminals 61b for only the semiconductor element 30b, and a common signal terminal 61c common to the semiconductor element 30a and the semiconductor element 30b. For example, the dedicated signal terminals 61a and 61b are used as sensor terminals for the temperature, current, etc. of the semiconductor elements 30a and 30b. Further, the common signal terminal 61c is used as a gate terminal or the like for driving the plurality of semiconductor elements 30a and 30b at the same timing. In the illustrated example, the dedicated signal terminals 61a and 61b are arranged on both sides in the column of the plurality of signal terminals 61, and the common signal terminal 61c is arranged at the central portion in the column of the plurality of signal terminals 61.

[0070] The wiring member 80 can provide dedicated connection and common connection inside the wiring member 80 by including an independent metal layer 382a and a common metal layer 382c. The wiring member 80 can correspond to different arrangements of the plurality of signal pads 35a and 35b by changing the laying pattern of the plurality of metal layers 82. Further, the wiring member 80 can change the arrangement of the dedicated signal terminals 61a and 61b and the common signal terminal 61c by changing the laying pattern of the plurality of metal layers 82.

[0071] Fourth Embodiment This embodiment is a modification example based on the preceding embodiment. This embodiment is an example in the case of including a plurality of semiconductor elements. One semiconductor module 10 includes a plurality of semiconductor elements 30a, 30b, 30c, and 30d.

[0072] In FIG. 7, the four semiconductor elements 30a, 30b, 30c, and 30d are stacked and arranged in parallel with respect to the second heat dissipation member 42. The plurality of semiconductor elements 30 have the same shape or similar shapes. The plurality of semiconductor elements 30 are arranged such that the signal pads 35 are located on one side of the second heat dissipation member 42. The plurality of semiconductor elements 30 are arranged dispersedly in a grid pattern.

[0073] The wiring member 80 is provided by the wiring member 480. The wiring member 480 has an area that spreads across a plurality of semiconductor elements 30a, 30b, 30c, and 30d. The wiring member 480 has an outer edge portion 484 and an opening 485. The outer edge portion 484 extends in a grid pattern. As a result, the wiring member 480 has four openings 485. Each of the four openings 485 opens at a position corresponding to each of the four semiconductor elements 30. The opening 485 provides an opening for the first joining member 71 to pass through.

[0074] The wiring member 480 has a plurality of metal layers 82. The plurality of metal layers 82 includes a dedicated metal layer 82a and a common metal layer 82c. The metal layers 82 are laid so as to bypass the semiconductor element 30 and extend continuously between the first joint portion 80a and the second joint portion 80b.

[0075] Fifth Embodiment This embodiment is a modified example based on the preceding embodiment. This embodiment is an example in the case of including a plurality of semiconductor elements. One semiconductor module 10 includes a plurality of semiconductor elements 30a, 30b, 30c, and 30d.

[0076] In FIG. 8, the four semiconductor elements 30a, 30b, 30c, and 30d are arranged in a square. Moreover, the four semiconductor elements 30a, 30b, 30c, and 30d are arranged rotationally symmetrically with respect to the central axis AXC. Signal pads 35 are positioned at the corners of each of the plurality of semiconductor elements 30. The plurality of semiconductor elements 30 are arranged such that signal pads 35 are positioned in the vicinity of the central axis AXC.

[0077] The wiring member 80 is provided by the wiring member 580. The wiring member 580 has a metal layer 82c. The wiring member 580 includes four first joint portions 80a. The wiring member 580 includes a second joint portion 80b that is connected to a common terminal member. The metal layer 82c has a portion that extends between the second joint portion 80b and the central axis AXC, and a plurality of branched portions that extend radially from the central axis AXC and reach the first joint portions 80a. The common metal layer 82c provides an electrical connection common to the plurality of semiconductor elements 30a, 30b, 30c, 30d. The common metal layer 82c provides signal paths of substantially equal length to the plurality of signal pads 35 from the second joint portion 80b. Substantially equal length means that the electrical characteristics are substantially equal, or even if there is a difference, it is a difference that can be substantially ignored in terms of the nature of the signal. For example, the signal pad 35 can be a pad for a drive signal such as a gate signal. In this case, it is possible to suppress the difference in the drive signals applied to the plurality of semiconductor elements 30.

[0078] Sixth Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 is positioned away from the heat dissipation member 40. Instead, in this embodiment, the wiring member 680 is arranged in contact with both the semiconductor element 30 and the first heat dissipation member 41. Further, the wiring member 680 includes a recess 86. The recess 86 functions as a volume adjustment portion for adjusting the volume of the first joint member 71 to an appropriate amount for joining the power pad 33 of the semiconductor element 30 and the first heat dissipation member 41. The recess 86 is provided by the recess 686. This embodiment provides a semiconductor module 10 that can stabilize the physical size of the first joint member 71.

[0079] In FIG. 9, the semiconductor module 10 includes a semiconductor element 30 disposed between a first heat dissipation member 41 and a second heat dissipation member 42. The semiconductor module 10 includes a wiring member 680. The wiring member 80 is provided by the wiring member 680. The wiring member 680 is positioned between the semiconductor element 30 and the first heat dissipation member 41. The wiring member 680 is disposed in contact with both the semiconductor element 30 and the first heat dissipation member 41. The wiring member 680 electrically connects between a signal pad 35 of the semiconductor element 30 and a signal terminal 61. The wiring member 680 has resin layers 81 and 83. Each of the resin layers 81 and 83 is formed by an aggregate in which a plurality of resin layers are stacked. Note that the resin layers 81 and 83 may be formed by a single resin layer formed of a continuous resin material.

[0080] The wiring member 680 has an outer edge portion 684 disposed along an edge of the first joining member 71. The outer edge portion 684 surrounds the first joining member 71 in the Y-Z plane. As a result, the outer edge portion 684 defines an opening 685 that defines the position of the first joining member 71 and the maximum range in the Y-Z plane. The wall surface of the opening 685 may form a minute gap with the first joining member 71 or may contact the first joining member 71. When the wall surface of the opening 685 contacts the first joining member 71, the opening 685 partitions the range of the first joining member 71.

[0081] The wiring member 680 includes a recess 686. The recess 686 opens to a wall surface that defines an opening 685. The recess 686 is formed by a notch that penetrates at least one of the plurality of resin layers forming the resin layers 81 and 83. Thus, the recess 686 has a thickness in the X direction corresponding to at least one resin layer. In the illustrated embodiment, the recess 686 is provided by the resin layer located at the outermost end among the plurality of resin layers. Therefore, the recess 686 also opens to the end face of the wiring member 680 in the X direction (thickness direction). The recess 686 defines an expansion chamber that communicates with the opening 685. The recess 686 provides a side wall of the expansion chamber. The wall surface of the expansion chamber in the X direction is provided by another resin layer. The recess 686 is positioned only at a part of the wall surface of the opening 685. The recess 686 has a shape that can also be called a notch portion of the wiring member 680. The recess 686 expands the volume of the opening 685 only in a part of the Y-Z plane. The recess 686 expands the volume of the opening 685 only in a part of the X-Z plane. The volume expansion chamber defined by the recess 686 may accommodate an excess portion of the first joining member 71. The excess portion of the first joining member 71 flows out into the recess 686 so as to be extruded or by its own fluidity, and hardens and remains in the recess 686. In the figure, the excess portion 675 remaining in the recess 686 is illustrated.

[0082] When a large number of semiconductor modules 10 are manufactured, there are products in which the volume expansion chamber accommodates the excess portion 675 of the first joining member 71 and products in which the volume expansion chamber does not accommodate the excess portion 675 of the first joining member 71. The volume expansion chamber functions as a relief capacity for absorbing an excessive amount of the first joining member 71 when an excessive amount of the first joining member 71 exists in the opening 685.

[0083] The recess 686 is arranged so as to partition the expansion volume chamber by a part of the surface of the first heat radiating member 41. The recess 686 is positioned adjacent to the first heat radiating member 41. The recess 686 is provided only in a part of the plurality of resin layers. In the illustrated example, the recess 686 is provided only in the resin layer closest to the first heat radiating member 41. As a result, one surface of the expansion volume chamber provided by the recess 686 is partitioned by the first heat radiating member 41. The recess 686 is provided so as not to reach the metal layer 82. The recess 686 is formed so as to maintain a good electrical insulation state between the first joining member 71 and the metal layer 82. The recess 686 is provided so as to provide a predetermined electrical insulation distance from the metal layer 82.

[0084] The wiring member 680 has a thickness TF1. The thickness TF1 is the thickness at which the wiring member 80 contacts the surface of the semiconductor element 30 and the first heat radiating member 41. The thickness TF1 is the thickness that defines the thickness of the first joining member 71 and is equal to the thickness of the first joining member 71.

[0085] The manufacturing method of the semiconductor module 10 has a first joining step of joining the first heat radiating member 41 and the semiconductor element 30 by the first joining member 71. The manufacturing method has an arranging step before the first joining step. In the arranging step, the first heat radiating member 41, the wiring member 680, and the semiconductor element 30 are stacked and arranged. At this time, the first joining member 71 before joining (before melting and re-hardening) is arranged in the opening 685. The first joining member 71 in the arranging step has a thickness equal to or thicker than the thickness TF1.

[0086] After the configuration process, the first bonding process is performed. In the first bonding process, the first bonding member 71 melts and flows. In the first bonding process, the first bonding member 71 bonds the first heat dissipation member 41 and the semiconductor element 30 and then cures again. In the first bonding process, in the process where the first bonding member 71 melts and then cures again, the thickness of the first bonding member 71 changes. In many cases, the thickness of the first bonding member 71 decreases from before the bonding process to after the bonding process. Further, in the first bonding process, pressure may be applied in a direction to bring the first heat dissipation member 41 and the semiconductor element 30 closer together. This pressure also decreases the thickness of the first bonding member 71.

[0087] In the first bonding process, the wiring member 680 contacts the first heat dissipation member 41 and the semiconductor element 30. At the same time, the opening 685 suppresses the flow of the first bonding member 71. In the process where the first bonding member 71 melts and then cures again, if there is an excessive amount of the first bonding member 71, the distance between the first heat dissipation member 41 and the semiconductor element 30 may not be stable. At this time, the excess portion of the first bonding member 71 is pushed out toward the recess 686. The excess portion of the first bonding member 71 may flow into the recess 686 without being pushed out. The excess portion of the first bonding member 71 remains in the recess 686 as the excess portion 675 by curing again. As a result, the excess portion 675 is held in the recess 686. It can be said that the recess 686 provides a relief volume for the first bonding member 71.

[0088] At this time, the recess 686 is adjacent to the first heat dissipation member 41. Therefore, the excess portion 675 contacts the first heat dissipation member 41 and contributes to providing a wide bonding cross-sectional area. Providing a wide bonding cross-sectional area enhances the heat transfer property in the first bonding member 71 and enables suppression of the current density.

[0089] Furthermore, in the bonding process, gas components may be mixed into the first bonding member 71, or gas components may be generated when the first bonding member 71 melts. The recess 686 may allow these gas components to flow in. The gas components may create voids inside the re-hardened first bonding member 71. When the gas components flow into the recess 686, generation of voids in the first bonding member 71 may be suppressed. It can be said that the recess 686 provides a escape volume for the gas components in the bonding process.

[0090] In this embodiment, the volume provided by the recess 686 is provided as an additional volume with respect to the standard volume for the first bonding member 71 provided by the opening 685. As a result, when the first bonding member 71 tends to overflow from the standard volume, the first bonding member 71 flows into the additional volume provided by the recess 686. Even after the first bonding member 71 re-hardens, the first bonding member 71 may remain in the additional volume provided by the recess 686. As a result, an appropriate volume of the first bonding member 71 remains in the standard volume provided by the opening 685. The first bonding member 71 remaining in the opening 685 provides an appropriate bonding state between the semiconductor element 30 and the first heat dissipation member 41. For example, the recess 686 suppresses the inclination between the semiconductor element 30 and the first heat dissipation member 41, unstable bonding, and unintentional leakage of the first bonding member 71.

[0091] In this embodiment, the entire wiring member 680 has a thickness TF1. Alternatively, the wiring member 680 may be configured to have a thickness TF1 only in the portion located between the semiconductor element 30 and the first heat dissipation member 41. For example, the wiring member 680 may be configured to have a thickness thinner than TF1 in the portion arranged to bridge between the semiconductor element 30 and the signal terminal 61. Such a configuration provides the flexibility required for the portion arranged to bridge between the semiconductor element 30 and the signal terminal 61.

[0092] Seventh Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the metal layer 82 of the wiring member 80 only connects the signal pad 35 and the signal terminal 61. Instead, in this embodiment, the wiring member 780 includes a metal layer 787 joined to the first joining member 71. From one perspective, this embodiment provides a semiconductor module 10 capable of stably adjusting the thickness of the joining member to a predetermined value. From another perspective, this embodiment provides a semiconductor module 10 capable of stably setting the position of the wiring member 780.

[0093] In FIG. 10, the wiring member 80 is provided by the wiring member 780. The wiring member 780 is disposed between the signal pad 35 and the signal terminal 61. The wiring member 780 is disposed so as to overlap the signal pad 35 in the X direction. Further, the wiring member 780 is disposed so as to overlap the power pad 33 in the X direction. The wiring member 780 extends so as to overlap both the signal pad 35 and the power pad 33. In other words, the wiring member 780 extends into the region where the first joining member 71 is disposed.

[0094] The wiring member 780 has an outer edge portion 784 disposed along the first joining member 71. The outer edge portion 784 surrounds the range where the first joining member 71 should be installed. The outer edge portion 784 demarcates an opening 785 in the resin layers 81 and 83 corresponding to the range of the first joining member 71. The wiring member 780 includes a metal layer 787 exposed in the opening 785. The opening 785 is also called a notch for exposing the metal layer 787 from the resin layers 81 and 82. The metal layer 787 is formed of the same material as the metal layer 82. The metal layer 787 providing the power path is electrically insulated from the metal layer 82 providing the signal path. The metal layer 787 is exposed from the wiring member 780 over at least the region of the first joining member 71 in the Y-Z plane.

[0095] The metal layer 787 is disposed and joined within the first joining member 71. As a result, the metal layer 787 partitions the first joining member 71 into a first layer 71c and a second layer 71d. The first layer 71c joins the power pad 33 of the semiconductor element 30 and the metal layer 787. The second layer 71d joins the metal layer 787 and the first heat dissipation member 41. In other words, the metal layer 787 is embedded within the first joining member 71. Note that the metal layer 787, or the opening 785, may have a communication opening for forming the first layer 71c and the second layer 71d as a continuous joining member. For example, the opening 785 can form a communication opening between the resin layers 81, 83 and the metal layer 787. Alternatively, or additionally, the metal layer 787 can be provided with a notch or a hole as a communication opening that communicates both sides of the metal layer 787.

[0096] The metal layer 787 is positioned so as to be embedded within the first joining member 71. As a result, the position of the wiring member 780 is stabilized by the first joining member 71. Further, the wiring member 780 is subjected to the flow of the resin and the pressure of the resin in the molding process of molding the resin member 20. However, the wiring member 780 with the metal layer 787 embedded within the first joining member 71 is less likely to deform even in the molding process and maintains a predetermined shape. For example, the wiring member 780 is less likely to warp even when subjected to the pressure of the resin.

[0097] A thickness adjustment member 776 for adjusting the thickness of the first layer 71c is disposed between the metal layer 787 and the first heat dissipation member 41. The thickness adjustment member 776 can be provided by, for example, nickel balls (Ni balls), bonding pads, or wire bonding. The thickness adjustment member 776 is provided by a conductive member that functions as the first bonding member 71 together with the first layer 71c, or a conductive metal member. The thickness adjustment member 776 is also disposed between the metal layer 787 and the semiconductor element 30. The thickness adjustment member 776 contributes to adjusting the thicknesses of the first layer 71c and the second layer 71d to a predetermined thickness. As a result, it is possible to suppress the thicknesses of the first layer 71c and the second layer 71d from becoming excessively large, that is, the thickness of the first bonding member 71 from becoming excessively large. As a result, for example, fluctuations in thermal resistance and / or fluctuations in electrical resistance are suppressed. Further, the stabilization of the thicknesses of the first layer 71c and the second layer 71d improves the reliability of the aluminum-silicon electrode (Al-Si electrode) on the power pad 33 on the semiconductor element 30. Further, when a thermal repetitive cycle is applied, the deformation direction of the metal layer 787 and the deformation direction of the resin member 20 may be the same direction, and the reliability of the aluminum-silicon electrode may be improved.

[0098] Eighth Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 is plate-shaped and provides a continuous surface. The plate-shaped wiring member 80 may, from one perspective, affect the flow of the resin, such as impeding the flow of the resin, in the molding process of the resin member 20. Also, the plate-shaped wiring member 80 may, from another perspective, receive force from the resin flow, such as being deformed by the resin flow. Instead of this, in this embodiment, the wiring member 880 has a communication portion 88 that allows the flow of the resin member 20 in the molding process. As a result, the resin member 20 penetrates through the plate-shaped wiring member 880 through the communication portion 88 and exists as a continuous resin material. From one perspective, this embodiment provides a semiconductor module 10 that can improve the flow of the resin in the molding process. From another perspective, this embodiment provides a semiconductor module 10 that can suppress the force acting on the wiring member 880 in the molding process.

[0099] In FIG. 11, the wiring member 80 is provided by the wiring member 880. The wiring member 880 can be used in one of the embodiments described in this specification. The wiring member 880 includes a communication portion 88 that communicates both sides of the wiring member 880. The resin member 20 penetrates through the communication portion 88. The communication portion 88 is formed by holes located adjacent to the metal layer 82. The holes penetrate through the resin layers 81 and 83 in the front and back directions. The wiring member 880 has one or a plurality of communication portions 88. The wiring member 880 may have holes 888a positioned between a plurality of metal layers 82. The wiring member 880 may have holes 888b positioned between the metal layer 82 and the outer edge of the wiring member 880.

[0100] The communication part 88 enables the resin member 20 to flow through the communication part 88 in the molding process. Even if there is a wiring member 880, the resin member 20 can flow from the front to the back and from the back to the front of the wiring member 880. As a result, the molding quality of the resin member 20 is improved. Also, the force acting on the wiring member 880 from the flow of the resin member 20 is suppressed. As a result, the displacement of the position of the wiring member 880 or the deformation of the wiring member 880 is suppressed. Further, the occurrence of joining defects including joining failure at the first joining part 80a and / or the second joining part 80b is suppressed.

[0101] Embodiment 9 This embodiment is a modified example based on the preceding embodiment. This embodiment shows an example of the communication part 88.

[0102] In FIG. 12, the wiring member 80 is provided by a wiring member 980. The wiring member 980 includes a communication part 88. The communication part 88 is provided by a single hole 988 provided in the wiring member 980. In this embodiment, the plurality of metal layers 82 are arranged so as to bypass the hole 988. According to this embodiment, a hole 988 having a relatively large area can be provided at a predetermined position of the wiring member 980. As a result, in the molding process, a relatively large amount of the resin member 20 can be made to flow at a position where the flow of the resin member 20 is required. Note that the position of the hole 988 is set so as to obtain the required flow of the resin material. For example, the position of the hole 988 is set in consideration of the gate position for injecting the resin member 20 into the mold in the molding process. In addition, in this embodiment as well, the same operational effects as those of the preceding embodiment can be obtained.

[0103] Embodiment 10 This embodiment is a modified example based on the preceding embodiment. This embodiment shows an example of the communication part 88.

[0104] In FIG. 13, the wiring member 80 is provided by the wiring member A80. The wiring member A80 includes a communication portion 88. The communication portion 88 is provided by a notch portion A88 formed in the wiring member A80. The notch portion A88 is formed as an omega-shaped notch continuous from the outer edge of the wiring member A80. The notch portion A88 opens toward the outer edge. The notch portion A88 may divide the wiring member A80 into a plurality of sub-members as shown by the broken line. A communication portion 88 that allows the resin to flow during the molding process is formed between the plurality of sub-members. Also in this embodiment, the same operational effects as those of the preceding embodiments can be obtained.

[0105] Embodiment 11 This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the thickness of the wiring member 80 is equal to or less than the thickness of the first joining member 71. Instead, in this embodiment, the thickness of the wiring member B80 exceeds the thickness of the first joining member 71. Further, the thickness of the wiring member B80 is equal to or less than the distance between the first heat dissipation member 41 and the second heat dissipation member 42. In the preceding embodiment, a jig may be used in the joining process to appropriately maintain the distance between the plurality of members. Also, in the joining process, the joining member 70 may adhere to an unintended position due to leakage or splashing of the joining member 70. In this embodiment, the wiring member B80 is in contact with both the first heat dissipation member 41 and the second heat dissipation member 42. Further, the wiring member B80 includes an opening B85 for partitioning the positions and shapes of the first joining member 71 and the second joining member 72. From one perspective, this embodiment provides a semiconductor module 10 that can accurately control the shapes of the first joining member 71 and the second joining member 72. From another perspective, this embodiment provides a semiconductor module 10 that can accurately control the interval between the first heat dissipation member 41 and the second heat dissipation member 42.

[0106] In FIG. 14, the semiconductor module 10 has a first heat radiating member 41 and a second heat radiating member 42. The wiring member 80 is provided by the wiring member D80. The wiring member B80 has a thickness TF2. The thickness TF2 is a thickness that brings the wiring member B80 into contact with the first heat radiating member 41 and also brings the wiring member B80 into contact with the second heat radiating member 42. The gap between the first heat radiating member 41 and the second heat radiating member 42 is defined by the thickness TF2 of the wiring member B80.

[0107] The wiring member B80 has an outer edge portion B84. The wiring member B80 has an opening B85. The outer edge portion B84 extends so as to surround the opening B85. The opening B85 has a stepped inner wall surface. The inner wall surface is a stepped surface that alternately repeats side surfaces facing in the Y direction or the Z direction and planes facing in the X direction. The inner wall surface enables the first heat radiating member 41, the first joining member 71, the semiconductor element 30, the second joining member 72, and the second heat radiating member 42 to be stacked and positioned inside the opening B85 in this order.

[0108] On the side of the first heat radiating member 41, the inner wall surface of the opening B85 is in contact with at least the side surface of the first heat radiating member 41. Specifically, on the side of the first heat radiating member 41, the inner wall surface of the opening B85 is in contact with at least the side surface of the internal metal plate 45. Thereby, the wiring member B80 positions the first heat radiating member 41 in the Y direction and the Z direction. The inner wall surface of the opening B85 is in contact with the outer edge portion of the surface (the lower surface in the figure) of the internal metal plate 45 of the first heat radiating member 41. Thereby, the wiring member B80 positions the first heat radiating member 41 in the X direction.

[0109] The inner wall surface of the opening B85 is in contact with at least the side surface of the second heat radiating member 42 on the side of the second heat radiating member 42. Specifically, the inner wall surface of the opening B85 is in contact with at least the side surface of the internal metal plate 48 on the side of the second heat radiating member 42. Thereby, the wiring member B80 positions the second heat radiating member 42 in the Y direction and the Z direction. The inner wall surface of the opening B85 is in contact with the outer edge portion of the surface (the upper surface in the figure) of the internal metal plate 48 of the second heat radiating member 42. Thereby, the wiring member B80 positions the second heat radiating member 42 in the X direction.

[0110] The inner wall surface of the opening B85 is in contact with the side surface of the semiconductor element 30 at approximately the central portion. Thereby, the wiring member B80 positions the semiconductor element 30 in the Y direction and the Z direction. The inner wall surface of the opening B85 is in contact with the outer edge portion of the surface (the upper surface in the figure) of the semiconductor element 30 at approximately the central portion. Thereby, the wiring member B80 positions the semiconductor element 30 in the X direction.

[0111] The inner wall surface of the opening B85 is in contact with at least the side surface of the first joining member 71 at the position where the first joining member 71 is disposed. This contact is realized by the inner wall surface preventing the flow of the first joining member 71 in the molding process. At the same time, the inner wall surface defines the shape of the first joining member 71. The wiring member B80 positions the first joining member 71 in the Y direction and the Z direction. The inner wall surface of the opening B85 is in contact with at least the side surface of the second joining member 72 at the position where the second joining member 72 is disposed. This contact is realized by the inner wall surface preventing the flow of the second joining member 72 in the molding process. At the same time, the inner wall surface defines the shape of the second joining member 72. The wiring member B80 positions the second joining member 72 in the Y direction and the Z direction.

[0112] The inner wall surface in the portion where the first joining member 71 is disposed defines a volume chamber having a size that defines the size of the first joining member 71. The inner wall surface in the portion where the second joining member 72 is disposed defines a volume chamber having a size that defines the size of the second joining member 72. In the joining process, in the process where the joining member 70 is melted and then cured again, the inner wall surface of the opening B85 suppresses the leakage and scattering of the first joining member 71. Further, the inner wall surface of the opening B85 defines the size and shape of the first joining member 71 in the melting process and the curing process of the first joining member 71. In the joining process, in the process where the joining member 70 is melted and then cured again, the inner wall surface of the opening B85 suppresses the leakage and scattering of the second joining member 72. Further, the inner wall surface of the opening B85 defines the size and shape of the second joining member 72 in the melting process and the curing process of the second joining member 72.

[0113] According to this embodiment, the gap between the first heat radiating member 41 and the second heat radiating member 42 is defined by the wiring member B80. As a result, the use of additional jigs can be suppressed, and the shape of the semiconductor module 10 can be defined by effectively using the wiring member B80. Note that this embodiment does not eliminate the use of jigs to zero. Further, this embodiment may be used in combination with the concave portion 686 described in the sixth embodiment. Also in this embodiment, the wiring member B80 may be configured to have a thickness TF2 only in the portion located between the first heat radiating member 41 and the second heat radiating member 42. For example, the wiring member 680 may be configured to have a thickness thinner than the thickness TF2 in the portion disposed so as to bridge between the semiconductor element 30 and the signal terminal 61. Such a configuration provides the flexibility required for the portion disposed so as to bridge between the semiconductor element 30 and the signal terminal 61.

[0114] 12th Embodiment This embodiment is a modified example based on the preceding embodiment. In the preceding embodiment, the wiring member 80 only reaches the periphery of the semiconductor element 30. When the semiconductor module 10 is used as a device that handles a large current, arranging the member through which the current flows on the positive electrode side and the member through which the current flows on the negative electrode side close to each other contributes to suppressing the inductance component. However, when the member through which the current flows on the positive electrode side and the member through which the current flows on the negative electrode side are brought close to each other, the electrical insulation between the members may be impaired. In this embodiment, the wiring member C80 is arranged as an insulating member between the pair of power terminals 51. From one viewpoint, this embodiment provides a semiconductor module 10 with improved electrical insulation. From another viewpoint, this embodiment provides a semiconductor module 10 with a suppressed inductance component.

[0115] In FIG. 15, the vicinity of the pair of power terminals 51 of the semiconductor module 10 is illustrated. Each of the pair of power terminals 51 is electrically connected to each of the first heat dissipation member 41 and the second heat dissipation member 42. One power terminal 51a is joined to the internal metal plate 45 by a joining member C77. The other power terminal 51b is joined to the internal metal plate 48 by a joining member C78. One power path is provided by the power terminal 51a, the joining member C77, and the internal metal plate 45. The other power path is provided by the power terminal 51b, the joining member C78, and the internal metal plate 48. For example, the power terminal 51a is connected to the positive electrode line 52, and the power terminal 51b is connected to the negative electrode line 54. The relationship between the power terminals 51a, 51b and the positive electrode and the negative electrode may be reversed.

[0116] In this embodiment, the wiring member 80 is provided by the wiring member C80. The wiring member C80 connects the signal pad 35 of the semiconductor element 30 and the signal terminal 61. Further, the wiring member C80 also reaches between the pair of power terminals 51a and 51b. A part of the wiring member C80 is disposed between the pair of power terminals 51a and 51b. The wiring member C80 positions the pair of power terminals 51a and 51b in a stacked manner so as to overlap both sides of the wiring member C80. A resin layer C89 of the wiring member C80 is disposed between the pair of power terminals 51a and 51b. The resin layer C89 is formed as an extension portion extending from a main portion of the wiring member C80 disposed so as to bridge between the signal pad 35 and the signal terminal 61. The resin layer C89 extends in a tongue shape from the main portion including the metal layer 82. The power terminals 51a and 51b have an embedded portion embedded in the resin member 20 and an exposed portion exposed from the resin member 20. The resin layer C89 is disposed between the power terminal 51a and the power terminal 51b over the entire area of the embedded portions of the power terminals 51a and 51b. The resin layer C89 slightly extends up to the exposed portions of the power terminals 51a and 51b.

[0117] In the embedded portion, electrical insulation between the power terminal 51a and the power terminal 51b is provided by the resin layer C89. In the embedded portion, the resin member 20 does not penetrate between the power terminal 51a and the power terminal 51b. Further, in the exposed portion, the resin member 20 does not penetrate between the power terminal 51a and the power terminal 51b. To provide this state, the resin layer C89 is positioned so as to be exposed from the resin member 22 between the power terminals 51a and 51b. The resin member 20 formed by flowing and curing in the molding process contains many unstable elements regarding electrical insulation such as thickness, density, and the amount of foreign matter mixed in compared with the resin layer C89. In this embodiment, the electrical insulation between the pair of power terminals 51a and 51b is provided solely by the resin layer C89 of the wiring member C80. As a result, even when the pair of power terminals 51a and 51b are arranged close to each other, stable electrical insulation is provided.

[0118] The power terminals 51a and 51b are arranged close to each other so as to exert their mutual electromagnetic actions on each other. The power terminals 51a and 51b have the resin layer C89 arranged therebetween in a laminated manner. The power terminals 51a and 51b are arranged close to each other with a distance equal to the thickness of only the resin layer C89 therebetween. Since currents flow in opposite directions through the power terminals 51a and 51b, their mutual electromagnetic action acts to suppress the inductance component. The inductance component generates a surge during high-speed switching of the semiconductor module 10. For this reason, the semiconductor module 10 needs to be used with its switching speed suppressed. Suppression of the inductance component suppresses the surge and enables high-speed switching. As a result, this embodiment provides a semiconductor module 10 capable of high-frequency driving.

[0119] The configuration of this embodiment can be adopted for a semiconductor module 10 having a single semiconductor element 30. Further, the configuration of this embodiment can also be adopted for a semiconductor module 10 having a plurality of semiconductor elements 30 and accommodating one switching arm. In this case, the plurality of semiconductor elements 30 within the semiconductor module 10 can be arranged so as to provide various current paths. For example, the plurality of semiconductor elements 30 can adopt an arrangement in which current flows in an N shape within the semiconductor module 10, or an arrangement in which current flows in a U shape within the semiconductor module 10.

[0120] FIG. 16 is an exploded perspective view showing a semiconductor module 10 that provides one switching arm. The illustrated example is an arrangement in which current flows in an N shape within the semiconductor module 10. The semiconductor module 10 includes four heat dissipation members C40a, C40b, C40c, and C40d within a resin member 20. These heat dissipation members may be given first to fourth names. The semiconductor module 10 includes, as power terminals 51, a positive power terminal 51a, a negative power terminal 51b, and a power terminal 51c as an AC terminal. These power terminals may be given first to third names. The semiconductor module 10 includes two semiconductor elements 30a and 30b. Further, the semiconductor module 10 includes a wiring member C80d for the semiconductor element 30a and a wiring member C80e for the semiconductor element 30b. The wiring member C80d and the wiring member C80e may be integrally formed of a continuous resin material. One signal terminal 61 is illustrated in the figure.

[0121] The heat dissipation member C40a and the heat dissipation member C40b are joined via the semiconductor element 30a. The heat dissipation member C40c and the heat dissipation member C40d are joined via the semiconductor element 30b. These joints are provided by a joint member 70. The heat dissipation member C40b and the heat dissipation member C40c have an overlapping portion positioned overlappingly in the stacking direction (X direction). The overlapping portion is provided by a protruding portion protruding from a part of the heat dissipation members C40b and C40c. In the overlapping portion, the heat dissipation member C40b and the heat dissipation member C40c are joined by a joint member 70. The heat dissipation member C40a and the power terminal 51a are joined by a joint member C77. The heat dissipation member C40c and the power terminal 51b are joined by a joint member C78.

[0122] The wiring member C80 for the semiconductor element 30a has a tongue-shaped resin layer C89. The resin layer C89 is interposed between the power terminal 51a and the power terminal 51b. The resin layer C89 and the power terminal 51a face each other on the opposing surface C89a. The resin layer C89 and the power terminal 51a are in close contact with each other on the opposing surface C89a. The resin layer C89 and the power terminal 51b face each other on the opposing surface C89b. The resin layer C89 and the power terminal 51b are in close contact with each other on the opposing surface C89b. The close contact between the resin layer C89 and the power terminals 51a, 51b prevents the intrusion of the resin member 20 in the molding process. The close contact between the resin layer C89 and the power terminals 51a, 51b also prevents the intrusion of foreign matter even after the completion of the semiconductor module 10.

[0123] In the figure, for example, when current flows from the power terminal 51a to the power terminal 51b, the current path is illustrated by a thick dashed arrow. The power terminal 51a and the power terminal 51b are electrically insulated by the resin layer C89. Since the current flowing through the power terminal 51a and the current flowing through the power terminal 51b are arranged in proximity by the resin layer C89, the inductance component is suppressed by the mutual electromagnetic action. The heat dissipation member C40a and the heat dissipation member C40d have an overlapping portion that is positioned overlappingly in the stacking direction (X direction). The overlapping portion is provided by a protruding portion that protrudes from a part of the heat dissipation members C40a, C40d. In the overlapping portion, the resin layer C89 is disposed between the heat dissipation member C40a and the heat dissipation member C40d. As a result, the resin layer C89 improves the electrical insulation between the heat dissipation member C40a and the heat dissipation member C40d in the overlapping portion.

[0124] According to this embodiment, the inductance component in the pair of power terminals 51 is suppressed. As a result, this embodiment provides a semiconductor module 10 capable of high-frequency driving.

[0125] Embodiment 13 This embodiment is a modified example based on the preceding embodiment. In the preceding embodiment, the semiconductor element 30 and the first heat dissipation member 41 are joined only by the joining member 70. In this case, if the thickness of the joining member 70 is small, the flow of the resin member 20 in the molding process may be inhibited. Also, the thickness of the joining member 70 may allow the inclination of the semiconductor element 30, and the electrical insulation may be impaired. In this embodiment, between the semiconductor element 30 and the first heat dissipation member 41, in addition to the joining member 70, a spacer member D77 having a predetermined thickness is disposed. From one viewpoint, this embodiment provides a semiconductor module 10 appropriately molded by the resin member 20. From another viewpoint, this embodiment provides a semiconductor module 10 in which the thickness of the joining member 70 is suppressed and the inclination of the semiconductor element 30 is suppressed.

[0126] In FIG. 17, the semiconductor module 10 has a joining member 70 and a spacer member D77 between the semiconductor element 30 and the first heat dissipation member 41. The spacer member D77 is provided by a material having high conductivity and high thermal conductivity. In this embodiment, the spacer member D77 is provided by a metal plate made of copper or aluminum. The spacer member D77 is provided in the first joining member 71 between the semiconductor element 30 and the first heat dissipation member 41. The spacer member D77 may also be called a terminal member with respect to the semiconductor element 30. The first joining member 71 includes a first layer 71c located between the power pad 33 of the semiconductor element 30 and the spacer member D77, and a second layer 71d located between the spacer member D77 and the first heat dissipation member 41. It can be said that the spacer member D77 partitions the first joining member 71 into the first layer 71c and the second layer 71d. Note that the first layer 71c and the second layer 71d may be continuous on the side surface of the spacer member D77.

[0127] The spacer member D77 adjusts the distance between the semiconductor element 30 and the first heat dissipation member 41 to a predetermined value or more. The predetermined value is a gap that maintains good fluidity of the resin member 20 in the molding process. By providing a gap of a predetermined value or more, the resin member 20 can flow into the gap between the semiconductor element 30 and the first heat dissipation member 41. For example, the resin member 20 can flow into the vicinity of the first joint portion 80a of the wiring member 80. As a result, the generation of voids in the resin member 20 is suppressed, and the resin member 20 is properly molded. The properly molded resin member 20 stably supports and fixes a plurality of components at predetermined positions. Further, the properly molded resin member 20 provides the required electrical insulation.

[0128] The spacer member D77 suppresses the thickness of the joint member 70 between the semiconductor element 30 and the first heat dissipation member 41. The thickness of the first joint member 71 is suppressed to the thickness of the first layer 71c and the thickness of the second layer 71d. Thereby, the inclination of the semiconductor element 30 and the inclination of the first heat dissipation member 41 are suppressed.

[0129] Embodiment 14 This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 is formed of resin layers 81, 83 and a metal layer 82. The wiring member 80 may be deformed in the molding process. For example, the wiring member 80 may undergo a warping deformation such that residual stress is generated in the joint portions 80a, 80b. In addition, the flexible wiring member 80 may cause an unintentional deterioration of electrical insulation due to deformation in the molding process. In this embodiment, a wiring member E80 provided with an additional metal layer E90 is used to cause a plastic deformation to the extent of maintaining a predetermined shape. The additional metal layer E90 imparts mechanical strength to the wiring member E80 that can maintain a predetermined shape while having flexibility that can be deformed by reversible plastic deformation. This embodiment provides a semiconductor module 10 in which unintentional deformation of the wiring member 80 is suppressed.

[0130] FIG. 18 shows an enlarged cross-sectional view of the first joint portion 80a. The wiring member 80 is provided by the wiring member E80. The semiconductor element 30 has signal pads 35. The metal layer 82 is joined to the signal pads 35 at the first joint portion 80a. In the figure, the joining means E70 that joins the metal layer 82 and the signal pads 35 is illustrated by a triangular symbol. The joining means E70 includes various joining means that can be used for the electrical connection of the metal layer 82. The joining means E70 includes the joining member 70 described in the previous embodiment. The joining means E70 includes welding joints such as laser welding and electric welding.

[0131] The wiring member E80 includes resin layers 81 and 82, a metal layer 82 as an energizing member, and further an additional metal layer E90. The additional metal layer E90 is provided additionally to the wiring member E80. The additional metal layer E90 is made of, for example, stainless steel. The additional metal layer E90 is adhered to the resin layer 83. The additional metal layer E90 is located only on the surface of the resin layer 83 and is not added to the exposed portion of the metal layer 82. The additional metal layer E90 is electrically insulated from the metal layer 82 as a signal path. A resin layer may be additionally provided so as to cover the additional metal layer E90.

[0132] The additional metal layer E90 has a rigidity that can be reversibly plastically deformed. As a result, the wiring member E80 can be deformed more flexibly than the signal terminal 61, but has a rigidity that can maintain its shape under the pressure of the resin member 20 in the molding process. The wiring member E80 suppresses deformation in the molding process. As a result, warping deformation at the first joint portion 80a or the second joint portion 80b is suppressed. Suppression of warping deformation suppresses the stress that may destabilize or break the joint at the first joint portion 80a or the second joint portion 80b. As a result, this embodiment provides a semiconductor module 10 having high reliability.

[0133] The wiring member E80 is deformed so as to curve in a direction away from the surface of the semiconductor element 30. In the figure, the wiring member E80c of the comparative example is shown by a broken line. The wiring member E80c of the comparative example is flat. The wiring member E80c of the comparative example is arranged in contact with the surface of the semiconductor element 30. In this case, the wiring member E80c of the comparative example may cause dielectric breakdown. The wiring member E80 having a curved shape in a direction away from the surface of the semiconductor element 30 can suppress the possibility of dielectric breakdown. For example, the curved shape of the wiring member E80 allows the resin member 20 to flow into the gap between the wiring member E80 and the surface of the semiconductor element 30. The resin member 20 that has flowed into the gap suppresses the possibility of dielectric breakdown.

[0134] 15th Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member E80 includes an additional metal layer E90 that undergoes plastic deformation. When the wiring member E80 is used, the end face of the wiring member E80 is arranged in the vicinity of the semiconductor element 30. In this case, noise may occur in the metal layer 82 due to the influence of a large current flowing through the semiconductor element 30. In this embodiment, the additional metal layer E90 is used as a shield layer against electromagnetic noise.

[0135] In FIG. 19, the wiring member 80 is provided by the wiring member E80. The additional metal layer E90 is arranged to overlap with the metal layer 82 for the signal path. The additional metal layer E90 extends over the entire plate-like range of the wiring member E80. The wiring member E80 includes a grounding member F91 that electrically grounds the additional metal layer E90. A non-limiting example of the grounding member F91 is to ground the additional metal layer E90 to the reference potential of the semiconductor element 30. When the semiconductor element 30 includes a signal pad 35 of the reference potential, the grounding member F91 grounds the additional metal layer E90 to the signal pad 35 of the reference potential. The reference potential is the Kelvin emitter potential (KE potential) when the SW element is an IGBT, and is provided by the Kelvin source potential (KS potential) when the SW element is a MOSFET. The additional metal layer E90 functions as an electromagnetic shielding layer for the metal layer 82. The additional metal layer E90 suppresses noise related to the metal layer 82 included in the wiring member E80. As a result, according to this embodiment, a semiconductor module 10 with suppressed noise is provided.

[0136] 16th Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the joining process is performed after the joining member 70 is arranged between the signal pad 35 and the metal layer 82, or between the signal terminal 61 and the metal layer 82. In this case, it was difficult to accurately manage the volume of the joining member 70. If the volume of the joining member 70 is insufficient with respect to the appropriate amount, a joining defect occurs. If the volume of the joining member 70 is excessive with respect to the appropriate amount, unintended joining may occur. Also, the arranged joining member 70 may leak before the joining process. This embodiment enables reliable and easy management of the volume of the joining member 70 in the first joining portion 80a and / or the second joining portion 80b.

[0137] In FIG. 20, the wiring member 80 is provided by the wiring member G80. The figure shows an intermediate state in a manufacturing method showing the third bonding step and / or the fourth bonding step related to the wiring member G80. The intermediate product 10a is installed and held on the jig G92 used in the manufacturing method. The jig G92 is provided by a holder that can be positioned in a melting furnace for melting the bonding member 70, or a transporter for transporting the intermediate product 10a. The intermediate product 10a includes a second heat dissipation member 42 and a semiconductor element 30 joined to the second heat dissipation member 42 by a second bonding member 72. Further, the intermediate product 10a includes a power terminal 51 and a signal terminal 61. The power terminal 51 and the signal terminal 61 are held by the jig G92. The intermediate product 10a further includes a wiring member G80. The wiring member G80 is arranged and held in a specified position using alignment marks provided on the wiring member G80 and the semiconductor element 30. The alignment marks can be provided in the vicinity of the signal pads 35 of the semiconductor element 30.

[0138] The wiring member G80 has a first surface G80f facing the semiconductor element 30 and a second surface G80g opposite to the first surface G80f. The wiring member G80 has an opening G80h at the first bonding portion 80a through which the third bonding member G73 can be supplied from above in the gravitational direction. The wiring member G80 has an opening G80i at the second bonding portion 80b through which the fourth bonding member G74 can be supplied from above in the gravitational direction.

[0139] FIG. 21 is a plan view showing a wiring member G80 in this embodiment. The wiring member G80 has, at a first joint portion 80a, an opening G80h and a metal layer 82 exposed in the opening G80h. The metal layer 82 has a gap G93 as a communication portion between the metal layer 82 and the opening G80h. A part of a third joining member G73 supplied from above passes through the gap G93 to join the metal layer 82 and the signal pad 35. The metal layer 82 has a hole G94 as a communication portion that communicates with the opening G80h and opens on both surfaces of the metal layer 82. A part of the third joining member G73 supplied from above passes through the hole G94 to join the metal layer 82 and the signal pad 35. As shown in the figure, either one of the gap G93 and the hole G94 may be provided. In any configuration, a communication portion that connects the front and back of the metal layer 82 is provided at the opening G80h.

[0140] The wiring member G80 has, at a second joint portion 80b, an opening G80i and a metal layer 82 exposed in the opening G80i. The metal layer 82 has a gap G93 as a communication portion between the metal layer 82 and the opening G80i. A part of a fourth joining member G74 supplied from above passes through the gap G93 to join the metal layer 82 and the signal terminal 61. The metal layer 82 has a hole G94 as a communication portion that communicates with the opening G80i and opens on both surfaces of the metal layer 82. A part of the fourth joining member G74 supplied from above passes through the hole G94 to join the metal layer 82 and the signal terminal 61. As shown in the figure, either one of the gap G93 and the hole G94 may be provided. In any configuration, a communication portion that connects the front and back of the metal layer 82 is provided at the opening G80i.

[0141] Returning to FIG. 20, in the joining process, the supply of the third joining member G73 from above in the direction of gravity can be carried out by a manufacturing method in which the fourth joining member G74 in a molten state is dropped. After being dropped, the third joining member G73 flows into the space between the metal layer 82 and the signal pad 35 through the communication portion, joins them, and hardens. In the joining process, the supply of the fourth joining member G74 from above in the direction of gravity can be carried out by a manufacturing method in which the fourth joining member G74 in a molten state is dropped. After being dropped, the fourth joining member G74 flows into the space between the metal layer 82 and the signal terminal 61 through the communication portion, joins them, and hardens.

[0142] The joining process may include a supply process and a heating process. In the supply process, the paste-like or solid-state third joining member G73 is supplied from above in the direction of gravity to the opening G80h. In the heating process, the third joining member G73 is melted. As a result, the third joining member G73 flows into the space between the metal layer 82 and the signal pad 35 through the communication portion, joins them, and hardens. In the supply process, the paste-like or solid-state fourth joining member G74 is supplied from above in the direction of gravity to the opening G80i. In the heating process, the fourth joining member G74 is melted. As a result, the fourth joining member G74 flows into the space between the metal layer 82 and the signal terminal 61 through the communication portion, joins them, and hardens.

[0143] According to this embodiment, the third joining member G73 or the fourth joining member G74 can be supplied to the opening G80h or the opening G80i from above in the direction of gravity. As a result, volume management can be easily carried out.

[0144] Embodiment 17 This embodiment is a modified example based on the preceding embodiment. In the preceding embodiment, the wiring member 80 is joined by the joining member 70 that has hardened after melting. Instead of this, this embodiment employs a contact-type welding method as the joining means.

[0145] In FIG. 22, the wiring member 80 is provided by the wiring member H80. The intermediate product 10a is installed and held on the jig H92 used in the manufacturing method. The jig H92 is provided by a holder suitable for welding the metal layer 82 of the wiring member H80 to the signal pad 35 and the signal terminal 61, or by a transporter that transports the intermediate product 10a. The welding of the metal layer 82 is performed by the welding tools H73 and H74. The welding tools H73 and H74 are welding tools involving physical contact. When the welding is ultrasonic welding, the welding tools H73 and H74 are provided by an ultrasonic oscillator and a horn. The ultrasonic welding welds the metal layer 82 and the signal pad 35. The ultrasonic welding welds the metal layer 82 and the signal terminal 61. When the welding is electric welding, the welding tools H73 and H74 are provided by welding electrodes. The jig H92 provides a current path for flowing a welding current. The electric welding welds the metal layer 82 and the signal pad 35. The electric welding welds the metal layer 82 and the signal terminal 61.

[0146] Embodiment 18 This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 is joined by the joining member 70 that hardened after melting. Instead of this, this embodiment adopts a non-contact welding method as the joining means.

[0147] In FIG. 23, the wiring member 80 is provided by the wiring member I80. The intermediate product 10a is installed and held on the jig I92 used in the manufacturing method. The jig I92 is provided by a holder suitable for welding the metal layer 82 of the wiring member I80 to the signal pad 35 and the signal terminal 61, or by a transporter that transports the intermediate product 10a. The welding of the metal layer 82 is performed by the supply of high energy supplied from the welding tools I73 and I74. The welding tools I73 and I74 are non-contact welding tools without physical contact. When the welding is laser welding, the welding tools I73 and I74 are provided by a laser oscillator and a laser guide. The laser welding welds the metal layer 82 and the signal pad 35. The laser welding welds the metal layer 82 and the signal terminal 61.

[0148] 19th Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the semiconductor element 30 may be joined only by the joining member 70. The joining member 70 is a material that cures after melting. Therefore, the semiconductor element 30 may be fixed in an inclined state. There is concern about a decrease in electrical insulation or a decrease in heat conductivity due to the inclination of the semiconductor element 30. This embodiment provides a semiconductor module 10 having desired electrical characteristics by suppressing the inclination of the semiconductor element 30 with respect to the heat dissipation member 40.

[0149] In FIG. 24, an inclination suppressing member J76 for suppressing the inclination of the semiconductor element 30 is disposed in the joining member 70 between the semiconductor element 30 and the heat dissipation member 40. The inclination suppressing member J76 can be provided by a metal ball or the like having high conductivity and high heat conductivity. The metal ball can be provided by copper, nickel, or the like. These metal balls do not prevent the melting and curing of the joining member 70. In the illustrated example, the inclination suppressing member J76 is provided in the first joining member 71, the second joining member 72, the third joining member 73, and the fourth joining member 74. From the viewpoint of suppressing the inclination of the semiconductor element 30, the inclination suppressing member J76 is preferably provided in the first joining member 71 and / or the second joining member 72. Since the inclination suppressing member J76 adjusts the thickness of the joining member 70 to a predetermined range, it can also be called a thickness setting member.

[0150] A non-limiting example of the tilt suppression member J76 is provided by the metal ball described in this embodiment. A non-limiting example of the tilt suppression member J76 can be provided by a wiring member 80 disposed outside the semiconductor element 30. In this case, the wiring member 80 can include a frame-shaped portion surrounding the semiconductor element 30. A non-limiting example of the tilt suppression member J76 can be provided by a convex portion that partially protrudes from the heat dissipation member 40 toward the semiconductor element 30. In this case, the heat dissipation member 40 can include a plurality of convex portions. The tilt suppression member J76 is provided, for example, by a stud bonding that protrudes from the heat dissipation member 40 toward the semiconductor element 30. A non-limiting example of the tilt suppression member J76 can be provided by a groove provided in the heat dissipation member 40 corresponding to the outer peripheral portion of the semiconductor element 30. A non-limiting example of the tilt suppression member J76 can be provided by an insulating film disposed on the surface of the heat dissipation member 40 facing the semiconductor element 30.

[0151] The wiring member 80 illustrated in FIG. 9 or FIG. 14 is also effective as the tilt suppression member J76. In these examples, the wiring member 80 is positioned so as to surround the semiconductor element 30, thereby defining the thickness of the joining member 70. Therefore, the wiring member 80 in these examples acts as the tilt suppression member J76.

[0152] 20th Embodiment This embodiment is a modified example based on the preceding embodiment. This embodiment shows an example of a tilt suppression member.

[0153] In FIG. 25, the semiconductor element 30 includes a tilt suppression member K76 on at least one surface. The tilt suppression member K76 suppresses the tilt of the semiconductor element 30 with respect to the heat dissipation member 40. The tilt suppression member K76 is provided by a stud bonding formed on at least one surface of the semiconductor element 30. The stud bonding provides conductive convex portions on the surface of the semiconductor element 30. The stud bonding may sometimes be called a stud bump. The stud bonding is made of a metal such as gold, copper, or aluminum.

[0154] In the illustrated example, the semiconductor element 30 includes a plurality of tilt suppression members K76 on both of its surfaces. The tilt suppression member K76 is formed on one surface so as to be located within the first bonding member 71. The tilt suppression member K76 is formed, for example, within the range of the power pad 33 and is provided by a plurality of stud bondings protruding from the semiconductor element 30 toward the first heat dissipation member 41. The tilt suppression member K76 is formed on the other surface so as to be located within the second bonding member 72. The tilt suppression member K76 is formed, for example, within the range of the power pad 34 and is provided by a plurality of stud bondings protruding from the semiconductor element 30 toward the second heat dissipation member 42.

[0155] In the bonding step of the manufacturing method, excessive proximity between portions other than the power pads 33 and 34, such as the side surface of the semiconductor element 30, and the heat dissipation member 40 may cause an unintended deterioration or breakage of the insulation state. When the thickness of the bonding member 70 in contact with the semiconductor element 30 is partially or entirely smaller than a predetermined minimum thickness, the above-mentioned excessive proximity is a concern.

[0156] According to this embodiment, when the bonding member 70 is in a molten state, the tilt suppression member K76 suppresses the tilt of the semiconductor element 30 with respect to the heat dissipation member 40. From another perspective, the tilt suppression member K76 is also called a thickness defining member that defines the thickness of the bonding member 70. Further, the tilt suppression member K76 is positioned within the bonding member 70. The tilt suppression member K76 is made of a metal that is easily compatible with the molten bonding member 70 and easily bonds to the bonding member 70. For this reason, the tilt suppression member K76 prevents the bonding member 70 from flowing away from the surface of the semiconductor element 30 in the bonding step of the manufacturing method. In other words, the tilt suppression member K76 acts to hold the bonding member 70 above and / or below the surface of the semiconductor element 30. From this perspective, the tilt suppression member K76 is also called a flow suppression member that suppresses the flow of the bonding member 70.

[0157] In the bonding step of the manufacturing method, when the bonding member 70 is in a molten state, the tilt suppression member K76 suppresses the thickness of the bonding member 70 in contact with the semiconductor element 30 from becoming smaller than a predetermined minimum thickness. As a result, the tilt of the semiconductor element 30 is suppressed. In other words, a situation where a portion other than the power pads 33 and 34, such as the side surface of the semiconductor element 30, approaches the heat dissipation member 40 excessively is suppressed.

[0158] 21st Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 electrically connects the signal pad 35 and the signal terminal 61 in the semiconductor element 30. In the manufacturing method, the wiring member 80 may be positioned with reference to the signal pad 35. In this case, due to misalignment, dimensional errors, etc. of the semiconductor element 30, the signal terminal 61, and the wiring member 80, etc., the signal terminal 61 and the wiring member 80 may not be positioned in the intended positional relationship. Also, the reverse case is assumed. In the manufacturing method, the wiring member 80 may be positioned with reference to the signal terminal 61. In this case, due to misalignment, dimensional errors, etc. of the semiconductor element 30, the signal terminal 61, and the wiring member 80, etc., the signal pad 35 and the wiring member 80 may not be positioned in the intended positional relationship. In particular, when a plurality of signal pads 35 are arranged with a relatively small pad pitch, the above problem becomes prominent. In this embodiment, the opening L80h in the first bonding portion 80a is formed smaller than the opening L80i in the second bonding portion 80b. This shape enables a relatively small pad pitch while allowing for misalignment and dimensional errors of the components. Thereby, a semiconductor module 10 is provided that enables the formation of an electrical connection by the wiring member 80 while allowing error components including misalignment and dimensional errors of the components.

[0159] In FIG. 26, this embodiment is a modified example based on the embodiment of FIG. 6. The wiring member 80 is provided by the wiring member L80. The wiring member L80 includes an opening L80h for joining the signal pads 35a and 35b and the metal layer 82. The wiring member L80 includes an opening L80i for joining the signal terminal 61 and the metal layer 82. The openings L80h and L80i are window portions provided in the resin layers 81 and 83, and expose a part of the metal layer 82. The openings L80h and L80i are provided as holes. The openings L80h and L80i may be provided as notches. The area Ah of the opening L80h is smaller than the area Ai of the opening L80i (Ah < Ai). The difference between the area Ah and the area Ai allows for error components of a plurality of components in the joining process and enables joining at the second joining portion 80b. Here, the shape of the opening L80i is set according to the error components. For example, when the error components include many error components in the Y direction, the shape of the opening L80i is set to a shape having a longitudinal direction in the Y direction. Also, for example, when the error components include many error components in the Z direction, the shape of the opening L80i is set to a shape having a longitudinal direction in the Z direction. Note that as error components, component misalignment in the placement process and / or component dimensional error in the preparation process can be assumed.

[0160] The placement step of the manufacturing method is performed so that the first joint portion 80a coincides with a plurality of signal pads 35a, 35b. That is, the placement step is performed so that the opening L80h of the wiring member L80 is accurately positioned with respect to the signal pads 35a, 35b. As a result, when the bonding step is performed after the placement step, even when the pad pitch is small, it is possible to bond the plurality of signal pads 35a, 35b and the plurality of metal layers 82. Further, in the placement step, the second joint portion 80b is disposed in the vicinity of the plurality of signal terminals 61. At this time, the second joint portion 80b having the relatively large opening L80i is disposed so as to coincide with the plurality of signal terminals 61 even if there are error components. At this time, the large-area opening L80i positions the plurality of signal terminals 61 and the plurality of metal layers 82 in a positional relationship that allows them to be bonded to each other while allowing for error components. For example, a single signal terminal 61 is positioned within the range of the opening L80i. As a result, when the bonding step is performed after the placement step, even if there are error components, a plurality of bonding portions are formed between each of the plurality of signal terminals 61 and each of the plurality of metal layers 82 while allowing for the error components.

[0161] According to this embodiment, even if there are error components, the wiring member L80 can provide a plurality of electrical connections between the plurality of signal pads 35a, 35b and the plurality of signal terminals 61. In particular, this embodiment can perform bonding at the plurality of signal pads 35a, 35b with high positional accuracy even when the plurality of signal pads 35a, 35b have a small pad pitch. This configuration is effective, for example, when the active region of the semiconductor element 30 as an element is relatively enlarged by a small pad pitch.

[0162] 22nd Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the wiring member 80 includes a metal layer 82 for electrical connection. The wiring member 80 may be flexibly deformed in each of the placement process, the bonding process, and the molding process. On the other hand, when the wiring member 80 is excessively deformed, an unintended decrease in electrical insulation may occur. From another perspective, there is also concern that a desired electrical characteristic may not be obtained even when the amount of deformation of the wiring member 80 is less than the intended amount of deformation. This embodiment imparts appropriate rigidity to the wiring member 80. Thereby, excessive deformation of the wiring member 80 is suppressed. From another perspective, this embodiment imparts different rigidities to different parts of the wiring member 80. Thereby, it is possible to cause a desired deformation in one part of the wiring member 80 and suppress deformation in other parts.

[0163] In FIG. 27, the wiring member 80 is provided by the wiring member M80. The wiring member M80 includes a metal layer 82 for electrical connection. Further, the wiring member M80 includes additional metal layers M95 and M96 on one side of the metal layer 82, on both sides of the metal layer 82, or between a plurality of metal layers 82. The additional metal layers M95 and M96 increase the rigidity of the wiring member M80 as compared with the wiring member 80 that does not include them.

[0164] The wiring member M80 may have an additional metal layer only on a part of the wiring member M80 and not on the remaining part. As a non-limiting example, an additional metal layer M95 is shown. The additional metal layer M95 is disposed only at the first joint 80a and / or the second joint 80b. In this case, the additional metal layer M95 adjusts the rigidity of the wiring member M80 at the first joint 80a and / or the second joint 80b to be higher than the rigidity of the wiring member M80 in other portions. The high rigidity of the wiring member M80 only at the first joint 80a and / or the second joint 80b improves the positioning accuracy in the placement process at the first joint 80a and / or the second joint 80b. Also, the high rigidity of the wiring member M80 only at the first joint 80a and / or the second joint 80b improves the reliability of the joint process. As a result, the high rigidity of the wiring member M80 only at the first joint 80a and / or the second joint 80b improves the reliability of the joint portion and the reliability of the semiconductor module 10.

[0165] The wiring member M80 may include an additional metal layer parallel to the metal layer 82. As a non-limiting example, an additional metal layer M96 is shown. The additional metal layer M96 adjusts the rigidity of the wiring member M80 to be high over the entire area between the first joint 80a and the second joint 80b.

[0166] From one aspect, this embodiment provides a wiring member M80 having a desired rigidity. From another aspect, this embodiment provides a wiring member M80 with partially different rigidities. These configurations enable the deformation of the wiring member M80 to be set in a planned manner. As a result, this embodiment provides a highly reliable semiconductor module 10 related to the wiring member M80.

[0167] 23rd Embodiment This embodiment is a modified example based on the preceding embodiment. In the preceding embodiment, the wiring member 80 includes a plurality of metal layers 82 arranged at equal intervals from each other. The shape of the plurality of metal layers 82 in the wiring member 80 affects the inductance component in the signal path. The wiring member N80 of this embodiment includes signal lines N82g and N82s arranged close to each other so as to suppress the inductance component. This embodiment provides a semiconductor module 10 capable of increasing the switching speed.

[0168] In FIG. 28, the wiring member 80 is provided by the wiring member N80. The wiring member N80 includes a plurality of metal layers 82. The plurality of metal layers 82 include a metal layer 82 that provides the drive signal line N82g and a metal layer 82 that provides the reference potential signal line N82s. When the semiconductor element 30 provides a MOSFET, the drive signal line N82g is the gate line. In this case, the reference potential signal line N82s is the source line. When the semiconductor element 30 provides an IGBT, the drive signal line N82g is the base line. In this case, the reference potential signal line N82s is the emitter line. When attempting to speed up the switching operation of the semiconductor element 30, the inductance of the loop circuit including the drive signal line and the reference potential signal line hinders the speed increase. In particular, in the case of a semiconductor element 30 made of SiC for which a speed increase is expected, suppression of the inductance in the signal path is an important issue.

[0169] The plurality of metal layers 82 are arranged at the first joint 80a so as to provide a pad pitch Pp of the plurality of signal pads. The plurality of metal layers 82 are arranged at the second joint 80b so as to provide a terminal pitch Pi of the plurality of signal terminals 61. Further, the drive signal line N82g and the reference potential signal line N82s are arranged so as to form a line pitch Pn between the first joint 80a and the second joint 80b. The line pitch Pn is smaller than the terminal pitch Pi (Pi > Pn). The line pitch Pn is smaller than the pad pitch Pp (Pp > Pn). At least one of the drive signal line N82g and the reference potential signal line N82s is arranged in a meandering shape in the Y-Z plane so as to approach the other and form the line pitch Pn. In this embodiment, both the drive signal line N82g and the reference potential signal line N82s are arranged in a meandering shape so as to approach each other. Both the drive signal line N82g and the reference potential signal line N82s are arranged to be line-symmetrical with respect to an intermediate line CTL located in the middle of the two signal lines. The meandering arrangement is provided by a shape including a diagonal part extending obliquely in the vicinity of the first joint 80a, a straight part extending linearly between the first joint 80a and the second joint 80b, and a diagonal part extending obliquely in the vicinity of the second joint 80b.

[0170] In this embodiment, the line pitch Pn increases the mutual inductance M between the drive signal line N82g and the reference potential signal line N82s. The mutual inductance M becomes larger than when the line pitch is equal to the terminal pitch Pi or the pad pitch Pp. As a result, the inductance component of the loop circuit formed by the drive signal line N82g and the reference potential signal line N82s decreases.

[0171] Furthermore, the drive signal line N82g and the reference potential signal line N82s are provided by the metal layer 82 fixed by the resin layers 81 and 83. Therefore, the distance between the drive signal line N82g and the reference potential signal line N82s is less likely to vary compared to wire bonding. For this reason, the inductance of the signal line is stabilized, and as a result, the SW element provided by the semiconductor element 30 can operate stably at high speed.

[0172] 24th Embodiment This embodiment is a modified example based on the preceding embodiment. In the preceding embodiment, the driving signal line N82g and the reference potential signal line N82s only suppress the inductance of the loop circuit by increasing the mutual inductance M. In this embodiment, further, the driving signal line N82g and the reference potential signal line N82s are provided by a laminate of a plurality of metal layers that are electrically connected in parallel. Also in this embodiment, a semiconductor module 10 capable of increasing the switching speed is provided.

[0173] In FIG. 29, the wiring member 80 is provided by the wiring member o80. The driving signal line o82g and the reference potential signal line o82s are provided by a laminate of a plurality of metal layers that are electrically connected in parallel. Each of the driving signal line N82g and the reference potential signal line N82s includes a plurality of metal layers 82 that are stacked with respect to the thickness direction X of the wiring member 80. The plurality of metal layers 82 are connected in parallel at the first joint 80a and the second joint 80b. As an example that is not limiting, three metal layers 82 are illustrated. For example, the driving signal line o82g is provided by a laminate of the metal layer o82p, the metal layer o82q, and the metal layer o82r. The plurality of metal layers o82p, o82q, o82r are stacked at a distance Gp apart by the insulating layers provided by the resin layers 81, 83. Similarly, the reference potential signal line o82s is also provided by a laminate of three metal layers. Further, in this embodiment, the laminate of the plurality of metal layers that provides the driving signal line o82g and the laminate of the plurality of metal layers that provides the reference potential signal line o82s are arranged so as to form a line pitch Pn with each other.

[0174] According to this embodiment, the inductance as a loop circuit can be suppressed. One configuration for suppressing the inductance is a configuration in which the drive signal line o82g and the reference potential signal line o82s are brought close to each other with a line pitch Pn. Thereby, by increasing the mutual inductance between the drive signal line o82g and the reference potential signal line o82s, the inductance of the loop circuit is suppressed. Another configuration for suppressing the inductance is a configuration in which each of the drive signal line o82g and the reference potential signal line o82s is provided by a laminate of a plurality of electrically parallel metal layers. Thereby, both the inductance of the drive signal line o82g itself and the inductance of the reference potential signal line o82s itself are suppressed. As a result, in this embodiment, the SW element provided by the semiconductor element 30 can be operated at high speed.

[0175] In this embodiment, the drive signal line o82g and the reference potential signal line o82s may be arranged without being brought close to each other. Also in this case, the laminate of the metal layers suppresses the inductance.

[0176] 25th Embodiment This embodiment is a modified example based on the preceding embodiment. In the embodiment illustrated in FIG. 9, the recess 686 has a thickness of at least one resin layer. In this embodiment, the wiring member P80 is formed by a single resin layer 81. The wiring member P80 partitions the recess 86 by only a part of the resin layer 81. The recess 86 includes a recess P86a and a recess P86b. Also in this embodiment, the recesses P86a and P86b allow the intrusion of the excessive bonding member 70 in the bonding process. As a result, a semiconductor module 10 is provided in which a performance degradation due to the excessive bonding member 70 is suppressed.

[0177] In FIG. 30, the semiconductor module 10 includes a wiring member P80. The wiring member 80 is provided by the wiring member P80. The wiring member P80 is disposed between the semiconductor element 30 and the first heat dissipation member 41. The wiring member P80 includes a metal layer 82 that electrically connects the signal pad 35 and the signal terminal 61. The wiring member P80 is formed of a single resin layer 81. The resin layer 81 defines an opening P85 for the first bonding member 71. The opening P85 functions as a molding wall that defines the shape of the first bonding member 71 in a fluid state during the bonding process and defines the shape when the first bonding member 71 cures again. The first bonding member 71 is polygonal prism-shaped.

[0178] The resin layer 81 has a recess P86a that opens into the opening P85 and communicates with the opening P85. The resin layer 81 has a recess P86b that opens into the opening P85 and communicates with the opening P85. The recess P86a and the recess P86b open at different positions toward the opening P85. The recess P86a and the recess P86b are positioned so as to open facing each other.

[0179] FIG. 31 is a partial cross-sectional view taken along line XXXI-XXXI of FIG. 30 in a state where the resin member 20 is removed. The opening P85 defined by the wiring member P80 is polygonal prism-shaped. In the illustrated example, an opening P85 that can be called a quadrangular prism shape or a quadrilateral prism shape is defined. The recess P86a and the recess P86b are disposed on different wall surfaces among the plurality of wall surfaces that define the opening P85. At least one of the recesses P86a and 86b opens over substantially the entire width in the Y direction (width direction) of the wall surface that defines the opening P85. Alternatively, at least one of the recesses P86a and 86b may open only in a part of the entire width of the wall surface that defines the opening P85. The recesses P86a and 86b are formed in a groove shape having a longitudinal direction in the Y direction by extending only elongately in the Y direction.

[0180] The recess P86a and the recess P86b surround the opening P85 and are arranged on the wall surfaces facing each other. The recess P86a and the recess P86b can be formed on at least one or more of the plurality of wall surfaces partitioning the opening P85. Further, the recess P86a and the recess P86b may open in a continuous groove shape so as to surround the opening P85.

[0181] The manufacturing method of the semiconductor module 10 has an arranging step of arranging the semiconductor element 30, the wiring member P80, and the first heat radiating member 41 in a laminated manner. In the arranging step, the first bonding member 71 is arranged in the opening P85. Further, the manufacturing method of the semiconductor module 10 has a bonding step of melting and then curing the first bonding member 71 after the arranging step to bond the semiconductor element 30 and the first heat radiating member 41. In the bonding step, the opening P85 shapes the first bonding member 71. When the amount of the first bonding member 71 is appropriate in the bonding step, the first bonding member 71 bonds the semiconductor element 30 and the first heat radiating member 41 without flowing into the recesses P86a and P86b. On the other hand, when an excessive amount of the first bonding member 71 is arranged, the melted first bonding member 71 in the bonding step flows into the recesses P86a and P86b by being extruded toward the recesses P86a and P86b.

[0182] Further, in this embodiment, the wiring member P80 defines the distance and parallelism between the semiconductor element 30 and the first heat radiating member 41. Therefore, an unintended inclination of the semiconductor element 30 with respect to the first heat radiating member 41 is suppressed. The wiring member P80 enables the distance and parallelism of the semiconductor element 30 with respect to the first heat radiating member 41 to be managed with high precision. As a result, good electrical connection can be provided at the power pads 33 and the signal pads 35.

[0183] According to this embodiment, a performance degradation of the semiconductor module 10 caused by an excessive amount of the first bonding member 71 is suppressed. As a result, a semiconductor module 10 with a performance degradation suppressed due to an excessive first bonding member 71 is provided.

[0184] Twenty-sixth embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the recesses P86a and P86b are groove-shaped elongated in the Y direction. The recesses 86 can be provided in various shapes. In this embodiment, the recesses 86 are provided by the recesses Q86. The recesses Q86 include two grooves having longitudinal directions in both the Y direction (width direction) and the X direction (thickness direction). This embodiment shows a non-limiting example of the opening shape of the recesses. The recesses can have various opening shapes, such as a circle, a polygon, and the cross shape shown in the figure.

[0185] 32, wiring member Q80 is provided. Wiring member Q80 is arranged between the semiconductor element 30 and the first heat dissipation member 41 so as to overlap them. Wiring member Q80 defines an opening Q85 for accommodating the first joint member 71. Furthermore, wiring member Q80 has a recess Q86 on the wall surface of opening Q85.

[0186] Fig. 33 shows a cross section taken along line XXXIII-XXXIII in Fig. 32. The recess Q86 has a horizontal groove portion that extends in the Y direction and a vertical groove portion that extends in the X direction. The designations "vertical" and "horizontal" are for convenience and do not indicate the installation state of the semiconductor module 10. The horizontal groove portion is a groove having a longitudinal direction in the Y direction and communicates with the opening Q85 through a long and thin opening. The vertical groove portion is a groove having a longitudinal direction in the X direction and communicates with the opening Q85 through a long and thin opening. The horizontal groove portion and the vertical groove portion intersect. The horizontal groove portion and the vertical groove portion communicate with each other at those groove portions.

[0187] Twenty-seventh embodiment This embodiment is a modified example based on the preceding embodiment. In the preceding embodiment, the recess Q86 extends straight in the main direction away from the opening, that is, in the depth direction. In this embodiment, the recess 86 is provided by the recess R86. The recess R86 extends also in a sub-direction intersecting the main direction away from the opening R85. It includes two grooves having longitudinal directions in both the Y direction (width direction) and the X direction (thickness direction). This embodiment shows an example that is not limited to the internal shape of the recess. The recess can have an internal shape with various branching portions such as an F shape, a T shape, a cross shape, or an internal shape with various bent portions such as a J shape, an L shape, etc.

[0188] In FIG. 34, the wiring member 80 is provided by the wiring member R80. The wiring member R80 demarcates the opening R85 for the first joining member 71. The wiring member R80 has the recess R86. The recess R86 opens to the inner wall surface of the opening R85. The recess R86 extends in a direction away from the opening R85. The direction away from the opening R85 can also be called the depth direction of the recess R86. Further, the recess R86 has a branch portion branching from the depth direction at a position away from the opening R85. The recess R86 can include one or a plurality of branch portions. The branch portion may include an upward branch extending upward in the direction of gravity with respect to the posture in the joining process. In this case, the upward branch may be suitable for the purpose of accumulating gas components. The gas components accumulated in the upward branch may adjust the pressure in the recess R86 and may adjust the inflow of the joining member 70 into the recess R86. The branch portion may include a downward branch extending downward in the direction of gravity with respect to the posture in the joining process. In this case, the downward branch may be suitable for the purpose of quickly accumulating the joining member 70 in a flowing state. The downward branch may accumulate the joining member 70 in the early stage of the joining process and may limit the amount of the joining member 70 flowing into the recess R86 in the later stage of the joining process.

[0189] 28th Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, in the placement step, the joining member placed in the opening may be insufficient compared to the appropriate amount. In this case, the joining member after the joining step may contain voids. Voids may cause current concentration, heat concentration, reduction in heat transfer amount, reduction in mechanical strength of the joining member, stress concentration, etc. in the joining member. The problems caused by these voids may also affect the performance of the semiconductor module 10. This embodiment suppresses the problems caused by the shortage of the joining member. In this embodiment, the recess 86 is provided by the recess S86.

[0190] In FIG. 35, the wiring member S80 demarcates the opening S85 for the first joining member 71. The wiring member S80 has a recess S86. The recess S86 houses the preliminary joining member S79. The preliminary joining member S79 is used for joining the semiconductor element 30 and the first heat dissipation member 41 when the main first joining member 71 is insufficient compared to the appropriate amount. The preliminary joining member S79 is a joining member provided in advance to assist the shortage of the main first joining member 71. The preliminary joining member S79 may be mixed with the first joining member 71 and form a continuous joining member 70 in the joining step in the manufacturing method. In this case, in the state of the completed semiconductor module 10, the preliminary joining member S79 does not remain in the recess S86. Rarely, in the state of the completed semiconductor module 10, the preliminary joining member S79 may remain in the recess S86. The illustrated example shows the case where the preliminary joining member S79 remains. Or, the illustrated example may be understood as showing the preliminary joining member S79 before melting before the joining step.

[0191] The preliminary joining member S79 is arranged in the recess S86 before the joining step in the manufacturing method. In a typical example, the preliminary joining member S79 is arranged in the recess S86 in the preparation step. The preliminary joining member S79 is arranged so as not to completely fill the recess S86 before the joining step. The preliminary joining member S79 is arranged to leave a cavity inside the recess S86 before the joining step. The cavity is used to accommodate the excess portion when the first joining member 71 is excessive. The preliminary joining member S79 is also called a preform joining member. When the joining member 70 is solder, the preliminary joining member S79 is also called a preform solder.

[0192] In the preparation step or the placement step of the manufacturing method, the preliminary joining member S79 is positioned in the recess S86. The preliminary joining member S79 is arranged in the placement step so as to face the first joining member 71 before melting through the recess S86. In this state, the preliminary joining member S79 and the first joining member 71 are lumps of the separate joining member 70.

[0193] In the first half of the joining step, the preliminary joining member S79 and the first joining member 71 are heated and transition to a molten state. The molten preliminary joining member S79 can flow inside the recess S86. At the same time, the first joining member 71 flows into the recess S86 and can flow through the recess S86. When the flowing preliminary joining member S79 and the flowing first joining member 71 meet, the preliminary joining member S79 and the first joining member 71 are mixed and transition to a continuous state. When the preliminary joining member S79 and the first joining member 71 are cooled in the second half of the joining step, they harden again.

[0194] In the bonding process, when the first bonding member 71 is insufficient by an appropriate amount, the preliminary bonding member S79 compensates for the shortage of the first bonding member 71. As a result, a good bonding state is formed between the semiconductor element 30 and the first heat radiating member 41. On the other hand, when the first bonding member 71 is excessive, the excessive portion flows into the recess S86. As a result, a good bonding state is formed between the semiconductor element 30 and the first heat radiating member 41. Thus, according to this embodiment, a good bonding state can be formed whether the first bonding member 71 is excessive or insufficient.

[0195] 29th Embodiment This embodiment is a modified example based on the preceding embodiment. In the preceding embodiment, the recess 86 is provided so as to open to the opening that houses the first bonding member 71. The recess 86 can be provided at various positions so as to absorb the excess amount of the bonding member 70. This embodiment shows an example where the position where the recess is provided is not limited. The recess 86 includes a recess T86a that opens to the opening that houses the third bonding member 73.

[0196] In FIG. 36, the wiring member 80 is provided by the wiring member T80. The wiring member T80 includes a recess T86. The recess T86 opens so as to communicate with the opening T85 that houses the first bonding member 71. Further, the wiring member T80 includes a recess T86a. The recess T86a opens so as to communicate with the opening that houses the third bonding member 73. The opening that houses the third bonding member 73 is provided by the first bonding portion 80a or a window portion formed in the resin layer 81 so as to form the first bonding portion 80a. The recess T86a can accommodate the excess amount of the third bonding member 73.

[0197] 30th Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the resin member 20 completely encloses the wiring member 80 disposed between the signal pad 35 of the semiconductor element 30 and the signal terminal 61. In other words, at least a part of the signal terminal 61 is enclosed in the resin member 20. Instead of this, a part of the wiring member 80 may extend from the resin member 20.

[0198] In FIG. 37, the wiring member 80 is provided by the wiring member U80. The wiring member U80 extends from the resin member 20. The wiring member U80 is joined to the signal terminal U61 by the fourth joining member 74 at the second joining portion 80b. The signal terminal U61 is a terminal that provides a signal path. The signal terminal U61 can be provided, for example, by a terminal provided on a printed circuit board, a land of the printed circuit board, or a coated electric wire connected to the printed circuit board.

[0199] 31st Embodiment This embodiment is a modification based on the preceding embodiment. In the preceding embodiment, the signal terminal 61 and the wiring member 80 are arranged in parallel so as to partially overlap with respect to the semiconductor element 30. For this reason, the signal terminal 61 extends parallel to the Y-Z plane. Instead of this, the signal terminal 61 may be arranged parallel to the X-Y plane. In this case, by utilizing the flexibility of the wiring member 80, the direction of the signal path can be bent inside the resin member 20.

[0200] In FIG. 38, the wiring member 80 is provided by the wiring member V80. The wiring member V80 has a bent portion V98 that is substantially at a right angle within the resin member 20. The semiconductor module 10 includes a plurality of signal terminals 61. The plurality of signal terminals 61 extend from the resin member 20 in parallel with the X-Y plane. The plurality of signal terminals 61 extend in parallel with the X direction. The plurality of signal terminals 61 are arranged in a column along the Y direction. The wiring member 80 is disposed between the plurality of signal pads 35 and the plurality of signal terminals 61 via the bent portion V98. In this embodiment, by utilizing the flexibility of the wiring member V80, the extending direction of the signal terminals 61 can be adjusted inside the resin member 20.

[0201] Other embodiments The disclosure in this specification, drawings, etc. is not limited to the illustrated embodiments. The disclosure includes the illustrated embodiments and variations by those skilled in the art based on them. For example, the disclosure is not limited to the combination of components and / or elements shown in the embodiments. The disclosure can be implemented by various combinations. The disclosure can have additional parts that can be added to the embodiments. The disclosure includes those in which the components and / or elements of the embodiments are omitted. The disclosure includes the replacement or combination of components and / or elements between one embodiment and another. The technical scope disclosed is not limited to the description of the embodiments. Some of the technical scopes disclosed are indicated by the description of the claims, and should be understood to include all changes within the meaning and scope equivalent to the description of the claims.

[0202] The disclosure in the specification, drawings, etc. is not limited by the description of the claims. The disclosure in the specification, drawings, etc. includes the technical idea described in the claims, and further extends to more diverse and extensive technical ideas than the technical idea described in the claims. Therefore, various technical ideas can be extracted from the disclosure in the specification, drawings, etc. without being restricted by the description of the claims.

[0203] In the embodiments described in this specification, the heat dissipation member 40 is exposed and disposed on both sides of the plate-shaped outer shape of the semiconductor module 10. Alternatively, the heat dissipation member 40 may be disposed only on one side of the semiconductor module 10. For example, only the first heat dissipation member 41 or only the second heat dissipation member 42 can be disposed. Further, the heat dissipation member 40 also serves as a member responsible for heat dissipation and a member providing an electric power path. Alternatively, the heat dissipation member 40 may be used solely as a member responsible for heat dissipation or solely as a member responsible for the electric power path. For example, the spacer member D77 can be used as an electric power terminal.

Description of Reference Numerals

[0204] 10 Semiconductor module, 20 Resin member, 30 Semiconductor element, 40 Heat dissipation member, 61 Signal terminal, 70 Joining member, 80 Wiring member.

Claims

1. A semiconductor element (30) having a signal pad (35) for a signal path and power pads (33, 34) for a power path with a power greater than that of the signal pad, a heat dissipation member (40) thermally joined to the semiconductor element (30), a resin member (20) that houses the semiconductor element so as to expose a part of the heat dissipation member, a metal signal terminal (61) arranged to be exposed from the resin member, a wiring member (80) that is housed in the resin member and is a member more flexible than the signal terminal, includes an electrically insulating resin layer and a metal layer supported by the resin layer, and has a first joint (80a) where the metal layer is connected to the signal pad and a second joint (80b) where the metal layer is connected to the signal terminal, further comprising a joint member (71, 73) that joints between the semiconductor element and the heat dissipation member and / or between the signal pad and the metal layer, The wiring member partitions an opening surrounding the joint member and has a recess (86) communicating with the opening, a semiconductor module.

2. The semiconductor module according to claim 1, wherein the wiring member (B80) positions the semiconductor element and the heat dissipation member.

3. A semiconductor element (30) having a signal pad (35) for a signal path and power pads (33, 34) for a power path with a power greater than that of the signal pad, a heat dissipation member (40) thermally joined to the semiconductor element (30), a resin member (20) that houses the semiconductor element so as to expose a part of the heat dissipation member, a metal signal terminal (61) arranged to be exposed from the resin member, a wiring member (80) that is housed in the resin member and is a member more flexible than the signal terminal, includes an electrically insulating resin layer and a metal layer supported by the resin layer, and has a first joint (80a) where the metal layer is connected to the signal pad and a second joint (80b) where the metal layer is connected to the signal terminal, The semiconductor module, wherein the wiring member (B80) positions the semiconductor element and the heat dissipation member.

4. Further comprising a pair of power terminals (51a, 51b) electrically connected to the power pads The semiconductor module according to any one of claims 1 to 3, wherein the wiring member reaches between the pair of power terminals and the pair of power terminals are stacked so as to overlap both surfaces of the wiring member.

5. A semiconductor element (30) having signal pads (35) for signal paths and power pads (33, 34) for power paths with power greater than that of the signal pads; A heat dissipation member (40) thermally joined to the semiconductor element (30); A resin member (20) that houses the semiconductor element so as to expose a part of the heat dissipation member; A metal signal terminal (61) arranged so as to be exposed from the resin member; A wiring member (80) that is housed in the resin member, is a member more flexible than the signal terminal, includes an electrically insulating resin layer and a metal layer supported by the resin layer, and the metal layer has a first joint (80a) connected to the signal pad and a second joint (80b) connected to the signal terminal; Furthermore, a pair of power terminals (51a, 51b) electrically connected to the power pads are provided; The semiconductor module, wherein the wiring member (C80) reaches between the pair of power terminals and the pair of power terminals are stacked so as to overlap both surfaces of the wiring member.

6. The semiconductor module according to any one of claims 1 to 5, wherein the semiconductor element includes a plurality of semiconductor elements, and the plurality of semiconductor elements are connected to the signal terminals by the wiring member.

7. The semiconductor module according to any one of claims 1 to 6, wherein the wiring member spreads over both the signal pad and the power pad and has a metal layer (787) joined to the power pad.

8. The semiconductor module according to any one of claims 1 to 7, wherein the wiring member has a communication part (88) through which the resin member passes.

9. The semiconductor module according to any one of claims 1 to 8, further comprising a conductive spacer member (D77) arranged between the power pad and the heat dissipation member.

10. The semiconductor module according to any one of claims 1 to 9, wherein the wiring member is insulated from the metal layer as a signal line and includes additional metal layers (E90, M95, M96) for adjusting the rigidity of the wiring member.

11. The semiconductor module according to claim 10, wherein the additional metal layer (E90) is arranged to overlap the metal layer and is grounded to the reference potential of the semiconductor element.

Images