Silicon sample analytical method and sample transportation tray

Abstract

To provide a new method that is contributed to a reduction in a lead time of a quality inspection of a singly crystal silicon sample.SOLUTION: A silicon sample analytical method includes: a sample mounting step of mounting a silicon sample cut out from a silicon ingot onto a sample mounting surface of a sample transportation tray in an outside of an FT-IR (Fourier Transform Infrared Spectroscopy) device; a tray carrying-in step of arranging a sample transportation tray 1 to which the silicon sample is mounted to a measurement position in the FT-IR device; a measurement step of executing an FT-IR measurement of the silicon sample on the sample transportation tray in the FT-IR device; and a tray carry-out process of carrying out the sample transportation tray to which the silicon sample is mounted after the FT-IR measurement to the outside of the FT-IR device.SELECTED DRAWING: Figure 4-1

Description

Technical Field

[0001] The present invention relates to a silicon sample analysis method and a tray for sample conveyance, and more particularly to a method for analyzing a silicon sample by FT-IR measurement and a tray for sample conveyance.

Background Art

[0002] As methods for growing single crystal silicon ingots, the CZ (Czochralski) method, the FZ (Floating Zone) method, etc. are known. By subjecting wafers cut from the grown single crystal silicon ingots to various processes, single crystal silicon wafers to be shipped as products are manufactured.

[0003] In the manufacturing process of single crystal silicon wafers, quality inspections may be performed, for example, as follows. After the single-crystal silicon ingot is peripherally ground to adjust its diameter, the top and tail parts are cut off, and then the cylindrical ingot is longitudinally divided and cut into silicon blocks of a predetermined length. Thereafter, in order to examine whether the cut silicon blocks satisfy the desired crystal quality over the entire length, sample wafers for quality inspection (generally called "slag sample wafers") are cut out from both ends of the silicon blocks (see, for example, Patent Document 1 and Patent Document 2), and inspections of various quality items are performed. Then, based on the inspection results of various quality items, a pass / fail determination of the silicon block quality is made. Hereinafter, the sample wafers and sample pieces prepared for quality inspection as described above are also referred to as "inspection samples". For example, when the inspection results of the inspection sample satisfy the target quality level, predetermined product processing is advanced for the silicon block from which this inspection sample was cut out. For example, a plurality of silicon wafers are cut out by slicing the silicon block using a wire saw. Thereafter, by performing various processing steps such as etching, grinding, polishing, and cleaning on the cut silicon wafers, silicon wafers to be shipped as products are completed. On the other hand, when the inspection results of the inspection sample do not meet the target quality level, the silicon block from which this inspection sample was cut out is determined to be a defective product, and no subsequent product processing is performed on this defective silicon block. In this way, it is possible to prevent silicon blocks that do not meet the quality standards from being subjected to various processes for wafer productization.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the manufacturing process of single-crystal silicon wafers, shortening the lead time of quality inspection of inspection samples cut from silicon blocks obtained from the above ingots is desirable because it will ultimately improve the wafer production yield.

[0006] In view of the above, one aspect of the present invention aims to provide a new method that contributes to shortening the lead time of quality inspection of single-crystal silicon samples.

Means for Solving the Problems

[0007] As an example of the quality inspection items of single-crystal silicon, the impurity concentration obtained by FT-IR measurement (Fourier Transform Infrared Spectroscopy) can be mentioned. Specific examples of the impurity concentration obtained by FT-IR measurement include oxygen concentration, carbon concentration, etc. The analysis of the impurity concentration by FT-IR measurement can be performed, for example, as follows. An infrared absorption spectrum is obtained by FT-IR measurement for the single-crystal silicon to be measured. The difference spectrum between the infrared absorption spectrum thus obtained and the infrared absorption spectrum obtained for the reference sample is determined. The above reference sample is a reference sample that does not contain or substantially does not contain the impurity to be detected (for example, oxygen, carbon, etc.). Then, the impurity concentration of the single-crystal silicon to be measured is determined from the above difference spectrum.

[0008] When performing FT-IR measurement with an FT-IR device, if the single-crystalline silicon to be measured is in the form of a wafer with a disc shape, for example, the wafer can be taken out from a wafer transfer cassette containing a plurality of wafers, transferred into the FT-IR device, the FT-IR measurement of the wafer can be performed within the FT-IR device, the wafer can be carried out of the FT-IR device and re-accommodated in the cassette, and these operations can be continuously automated for a plurality of wafers, for example. On the other hand, in the quality inspection of the slag sample wafer, in order to reduce the number of slag sample wafers prepared for quality inspection, a plurality of sample pieces obtained by dividing the slag sample wafer into a plurality of parts are prepared, and each sample piece is subjected to different quality inspections. Specific examples of the shape of such sample pieces include a quarter-circle shape, a semi-circle shape, etc. obtained by dividing a disc-shaped wafer. Also, in some cases, sample pieces with an arbitrary shape and arbitrary size, such as a rectangle, are cut out from a block cut out from an ingot. Thus, since the shape and / or size of the inspection sample cut out from the ingot can be various, conventionally, the inspection sample cut out from the ingot has to be placed one by one at the measurement position of the FT-IR device by the operator himself / herself, and after the FT-IR measurement is completed, the operator himself / herself has to take it out from the FT-IR device. In contrast, as a result of intensive studies, the present inventor has found a new silicon sample analysis method including placing the inspection sample to be measured on a sample transfer tray outside the FT-IR device and carrying the tray into and out of the FT-IR device, instead of directly placing the inspection sample to be measured at the measurement position of the FT-IR device as in the prior art. In such a silicon sample analysis method, for example, a series of steps from loading the measurement target sample into the FT-IR device to unloading it can be automated regardless of the shape and size of the measurement target sample. Thereby, it becomes possible to shorten the lead time of quality inspection. Also, the monitoring work of the FT-IR measurement device by the operator can be eliminated, and the work burden of the operator can be reduced.

[0009] That is, one aspect of the present invention is as follows. In the present invention and this specification, "silicon" shall mean single crystal silicon unless otherwise specified.

[0010] [1] A sample placement step of placing a silicon sample cut from a silicon ingot on the sample placement surface of a sample carrier tray outside the FT-IR apparatus, A tray loading step of placing the sample carrier tray on which the silicon sample is placed at the measurement position inside the FT-IR apparatus, A measurement step of performing FT-IR measurement of the silicon sample on the sample carrier tray inside the FT-IR apparatus, A tray unloading step of unloading the sample carrier tray on which the silicon sample is placed outside the FT-IR apparatus after the FT-IR measurement, A silicon sample analysis method having the above steps. [2] The sample carrier tray has a through-opening, In the sample placement step, the silicon sample is placed on a region including the through-opening of the sample placement surface of the sample carrier tray. The silicon sample analysis method according to [1]. [3] The sample placement surface has a recess, In the sample placement step, the silicon sample is placed in the recess. The silicon sample analysis method according to [1] or [2]. [4] Further including a sample preparation step of cutting a disk-shaped sample wafer from the silicon ingot and cutting the silicon sample from the sample wafer. The silicon sample analysis method according to any one of [1] to [3]. [5] The sample carrier tray has a notch groove at the outer edge. The silicon sample analysis method according to any one of [1] to [4]. [6] The sample placement surface of the sample carrier tray is an anodized surface. The silicon sample analysis method according to any one of [1] to [5]. [7] Further include a cassette preparation step of preparing a cassette in which a plurality of sample transfer trays with silicon samples placed on the sample placement surface are accommodated at intervals in the height direction, In the tray loading step, take out one sample transfer tray with a silicon sample placed on the sample placement surface from the cassette, transfer it into the FT-IR apparatus, and place it at the measurement position, In the tray unloading step, after the FT-IR measurement, unload the sample transfer tray with the silicon sample placed thereon out of the FT-IR apparatus and relocate it into the cassette. The silicon sample analysis method according to any one of [1] to [6]. [8] The sample transfer tray has a through-opening, In the sample placement step, place the silicon sample on a region including the through-opening of the sample placement surface of the sample transfer tray, Further include a sample preparation step of cutting out a disc-shaped sample wafer from the silicon ingot and cutting out the silicon sample from the sample wafer, The sample transfer tray has a notch groove at the outer edge, The sample placement surface of the sample transfer tray is an anodized surface, Further include a cassette preparation step of preparing a cassette in which a plurality of sample transfer trays with silicon samples placed on the sample placement surface are accommodated at intervals in the height direction, In the tray loading step, take out one sample transfer tray with a silicon sample placed on the sample placement surface from the cassette, transfer it into the FT-IR apparatus, and place it at the measurement position, In the tray unloading step, after the FT-IR measurement, unload the sample transfer tray with the silicon sample placed thereon out of the FT-IR apparatus and relocate it into the cassette. The silicon sample analysis method according to any one of [1] to [7]. [9] The sample placement surface has a recess, The silicon sample analysis method according to [8], wherein in the sample placement step, the silicon sample is placed in the recessed portion.

[10] A disk-shaped tray made of metal, having a notch groove on the outer edge of the disk shape, and a sample transport tray including a through-opening that penetrates the front and back surfaces of the tray in a sample placement area of a sample placement surface on which a silicon sample cut out from a silicon ingot is placed.

[11] The sample transport tray according to

[10] , having a recessed portion on the sample placement surface, and having the sample placement area in the recessed portion.

[12] The sample transport tray according to

[11] , wherein the outer shape of the recessed portion is substantially the same as the outer shape of the sample.

[13] The sample transport tray according to any one of

[10] to

[12] , wherein the metal is aluminum and the sample placement surface is an anodized surface. [Advantages of the Invention]

[0011] According to one aspect of the present invention, it is possible to provide a new method that contributes to shortening the lead time for quality inspection of single crystal silicon samples. [Brief Description of the Drawings]

[0012]

Figure 1

Figure 2

Figure 3

Figure 4-1

Figure 4-2

[0013] One aspect of the present invention relates to a silicon sample analysis method (also simply referred to as "analysis method"). The above analysis method has the following steps. A sample placement step of placing a silicon sample cut out from a silicon ingot on a sample placement surface of a sample carrier tray outside the FT-IR apparatus; A tray loading step of placing the sample carrier tray on which the silicon sample is placed at a measurement position inside the FT-IR apparatus; A measurement step of performing FT-IR measurement of the silicon sample on the sample carrier tray inside the FT-IR apparatus; A tray unloading step of unloading the sample carrier tray on which the silicon sample is placed outside the FT-IR apparatus after the FT-IR measurement.

[0014] Hereinafter, details of the above various steps and various steps that can be optionally performed will be described. Hereinafter, description may be made with reference to the drawings. However, the embodiments shown in the drawings are examples, and the present invention is not limited to the embodiments illustrated in the drawings.

[0015] [Sample Placement Step] <Silicon Sample to be Measured> The measurement target of the above analysis method is a silicon sample cut from a silicon ingot. Such a silicon sample is a wafer piece obtained by cleaving a silicon wafer in the thickness direction. The silicon sample cut from the silicon ingot may be an inspection sample cut directly from the silicon ingot, or may be, for example, an inspection sample cut from a silicon block obtained by longitudinally dividing and cutting the silicon ingot as described above. Further, the method for growing the silicon ingot from which the silicon sample is cut is not particularly limited, and for example, it is a silicon ingot grown by the CZ method or the FZ method. The shape of the measurement target silicon sample is arbitrary and is not particularly limited. From the viewpoint of reducing the number of slag sample wafers prepared for various quality inspections such as FT-IR measurement, it is preferably a shape other than a disc shape. For example, the measurement target silicon sample can be prepared by cutting disc-shaped sample wafers from both ends of a silicon block and then cutting samples of a plurality of wafer pieces from this sample wafer. The shape of the sample of the silicon wafer piece thus prepared is more preferably a shape obtained by dividing a disc-shaped sample wafer into partial circles (for example, quarter circles, semi-circles, etc.). A "quarter circle" is a partial circle obtained by dividing a circle into 1 / 4, and a "semi-circle" is a partial circle obtained by dividing a circle into 1 / 2. Also, a silicon sample having an arbitrary shape such as a rectangle may be used. A rectangle is not limited to one in which all four sides are straight lines, and includes those in which one or more of the four sides include curves. Note that the shape of the sample is allowed to include shape errors that can occur in normal working processes.

[0016] <Sample transfer tray> The sample transfer tray for placing the measurement target silicon sample is preferably a disc-shaped tray from the viewpoint of ease of placement on an FT-IR device commonly used for inspecting semiconductor wafers.

[0017] In the tray for sample conveyance, the placement surface (also referred to as the "sample placement surface" or "placement surface") on which the silicon sample to be measured is placed is a flat surface in one form. Here, the "flat surface" is a surface that does not have a recessed portion on which the silicon sample to be measured is placed as described later.

[0018] In another form, in the tray for sample conveyance, the placement surface on which the silicon sample to be measured is placed has a recessed portion, and the silicon sample to be measured is placed within this recessed portion. FIG. 1 is a schematic plan view of an example of a tray for sample conveyance having a recessed portion for placing a silicon sample. The tray for sample conveyance 1 shown in each figure has a recessed portion 11 on the placement surface 10 on which the silicon sample to be measured is placed, and the outer shape of the recessed portion 11 is a quarter-circular shape. Note that the outer shape of the recessed portion is not limited to a quarter-circular shape. For example, it may be a semi-circular shape or a rectangular shape, and it is desirable to have an outer shape corresponding to the shape of the silicon sample to be measured.

[0019] That is, it is preferable that the outer shape of the recessed portion of the tray for sample conveyance is substantially the same shape as the outer shape of the silicon sample to be measured placed within this recessed portion. Here, "substantially the same shape" means that the shape types are the same, and the outer dimensions (vertical dimension and / or horizontal dimension of the outer shape) may be the same or different. For example, it is preferable to place a silicon sample to be measured having an outer shape of a four-part circular shape within a recessed portion having an outer shape of a quarter-circular shape. In order to accommodate the silicon sample to be measured within the recessed portion of the tray for sample conveyance, it is preferable that the outer dimensions of the recessed portion of the tray for sample conveyance are larger than the outer dimensions of the silicon sample to be measured. That is, it is preferable that there is a gap between the outer edge of the silicon sample to be measured and the outer edge of the recessed portion when the silicon sample to be measured is accommodated within the recessed portion of the tray for sample conveyance. The gap can be, for example, more than 0 mm and 10 mm or less. The depth of the recessed portion of the tray for sample conveyance may be larger than, the same as, or smaller than the value of the thickness of the silicon sample to be measured. That is, it is not essential that the entire thickness direction of the silicon sample to be measured fits within the recessed portion of the tray for sample conveyance.

[0020] The FT-IR device performs FT-IR measurement by detecting infrared rays that have passed through the sample to be measured. Therefore, the sample carrier tray may have a through-opening that penetrates the front and back surfaces of the tray in order to allow infrared rays to pass through the sample to be measured placed on the tray. That is, the through-opening is an opening that penetrates from one surface to the other surface of the sample carrier tray.

[0021] FIG. 2 is a schematic plan view showing an example of a state in which a silicon sample to be measured is placed on a sample carrier tray having a through-opening. In FIG. 2, the sample carrier tray 1 has a through-opening 12 in the placement surface 10. The silicon sample S to be measured is placed on an area including the through-opening in the placement surface 10. In FIG. 4, the opening shape of the through-opening 12 is rectangular, and a part of the through-opening 12 is covered by the silicon sample S to be measured. However, the opening shape of the through-opening and the placement state of the silicon sample are not limited to the embodiment shown in FIG. 2. The opening shape of the through-opening may be any shape other than rectangular, or the entire through-opening may be covered by the silicon sample. The width of the through-opening may be a width through which infrared rays can pass. The length of the through-opening may be set to be equal to or greater than the length capable of measuring the FT-IR measurement area of the silicon sample to be measured. Further, a through-opening may be provided in a part of the recess described above.

[0022] The number of silicon samples placed on the placement surface of the sample transfer tray may be one or a plurality (i.e., two or more). FIG. 3 is a schematic plan view showing another example of a state in which a silicon sample to be measured is placed on a sample transfer tray having a through-opening. In FIG. 3, four quarter-circular silicon samples (Sa, Sb, Sc, Sd) are placed on the placement surface 10. In FIG. 3, the sample transfer tray 1 has four through-openings (12a, 12b, 12c, 12d) in the placement surface 10. The silicon sample Sa to be measured is placed on a region including the through-opening 12a of the placement surface 10. The silicon sample Sb to be measured is placed on a region including the through-opening 12b of the placement surface 10. The silicon sample Sc to be measured is placed on a region including the through-opening 12c of the placement surface 10. The silicon sample Sd to be measured is placed on a region including the through-opening 12d of the placement surface 10. In FIG. 3, the opening shapes of the through-openings 12a to 12d are rectangular, and a part of each through-opening is covered by each silicon sample to be measured.

[0023] Regarding the material of the sample transfer tray, from the viewpoint of ensuring high rigidity even when through-openings are provided, it is desirable that the sample transfer tray be made of metal. The metal may be a pure metal or an alloy. Further, in order to prevent corrosion of the metal, it is desirable to cover the metal surface with a film. For example, it is particularly desirable from the viewpoints of ensuring high rigidity and suppressing corrosion of the metal that the sample transfer tray be made of aluminum and the surface of the aluminum be anodized to form an oxide film (aluminum oxide) on the surface.

[0024] From the perspective of continuously and automatically performing the conveyance of wafers into the FT-IR apparatus, FT-IR measurement within the FT-IR apparatus, and conveyance out of the FT-IR apparatus for a plurality of silicon samples, it is preferable to accommodate a plurality of sample conveyance trays each having a silicon sample placed on a sample placement surface in a cassette with a space in the height direction. Examples of such cassettes include commercially available cassettes commonly used for the conveyance of semiconductor wafers, such as commercially available FOUP (Front-Opening Unified Pod) or FOSB (Front Open Shipping BOX). Also from the perspective of using such a wafer conveyance cassette, the sample conveyance tray is preferably a disk-shaped tray. From the perspective of ease of alignment when accommodating the sample conveyance tray with the silicon sample to be measured placed thereon in the cassette and / or when placing the sample conveyance tray with the silicon sample to be measured placed thereon in the FT-IR apparatus, the sample conveyance tray preferably has a notch groove as an alignment mark on the outer edge. Such a notch groove can have the same shape as the notch (V-notch shape) typically provided on a semiconductor wafer. The sample conveyance tray shown in FIG. 1 is provided with such a notch groove.

[0025] [Tray Loading Process] In the sample loading process, the sample conveyance tray on which the silicon sample to be measured is placed is arranged at the measurement position within the FT-IR apparatus in the tray loading process. When taking out the sample conveyance tray from the cassette, a wafer conveyance arm commonly used for sequentially performing the loading and unloading of the FT-IR apparatus for each of a plurality of semiconductor wafers can be used.

[0026] [FT-IR Measurement Process] In the FT-IR measurement process, the FT-IR measurement of the silicon sample placed on the sample transfer tray arranged at the measurement position inside the FT-IR apparatus is carried out. As the FT-IR apparatus, a commercially available FT-IR apparatus can be used. For example, the impurity concentration of the silicon sample can be determined using the infrared spectrum obtained by FT-IR measurement. The details of this point are as described above.

[0027] [Tray unloading process] After the FT-IR measurement is carried out, the sample transfer tray on which the silicon sample is placed is unloaded outside the FT-IR apparatus and, for example, is housed in a cassette.

[0028] [Specific example of FT-IR measurement automation system] Hereinafter, a specific example of a system for continuously and automatically performing FT-IR measurements on a plurality of silicon samples will be described. Here, "automation" means that it is not necessary for an operator to manually place a plurality of silicon samples one by one at the measurement position of the FT-IR apparatus and remove them from the measurement position of the FT-IR apparatus after the FT-IR measurement is completed.

[0029] FIG. 4 (FIGS. 4-1 and 4-2) is an explanatory diagram of a specific example of the FT-IR measurement automation system. Hereinafter, the specific example shown in FIG. 4 will be described.

[0030] In FIG. 4(a), a plurality of sample transfer trays 1 on which silicon samples are placed on the placement surface are housed in a cassette 3 with a space in the height direction. Between the FT-IR apparatus 2 and the cassette 3, tray receiving lanes 50A and 50B are arranged. The details of the sample transfer tray 1 and the silicon sample placed thereon are as described above.

[0031] The arm portion of the tray transfer arm 4 is telescopic, and a vacuum suction mechanism (not shown) is provided at the tip of the arm portion, and is configured to be able to adsorb and hold the back surface of the sample transfer tray 1. With the arm portion of the tray transfer arm 4 extended, one of the plurality of sample transfer trays 1 accommodated in the cassette 3 is placed on the arm portion (Fig. 4(a)), and the orientation of the arm portion is changed to place the sample transfer tray 1 above the tray receiving lanes 50A and 50B (Fig. 4(b)). Then, the arm portion of the tray transfer arm 4 is retracted to place the sample transfer tray 1 on the tray receiving lanes 50A and 50B (Fig. 4(c)). The interval between the tray receiving lanes 50A and 50B is wider than the interval between the tray transfer lanes 51A and 51B, and the tray receiving lanes 50A and 50B are located above the tray transfer lanes 51A and 51B (Fig. 4(b)). Although not shown in Fig. 4, the tray transfer lanes 51A and 51B continue from outside the FT-IR measuring device into the FT-IR measuring device 2.

[0032] The tray receiving lanes 50A and 50B are movable up and down. By moving the tray receiving lanes 50A and 50B downward (in the direction of the arrow in Fig. 4(d)), the sample transfer tray 1 is placed on the tray transfer lanes 51A and 51B (Fig. 4(d)).

[0033] The angle adjustment stage 52 shown in Fig. 4 is movable up and down and rotatable about the central axis as the rotation axis. After placing the sample transfer tray 1 on the sample transfer lanes 51A and 51B, the angle adjustment stage 52 is moved upward (in the direction of the arrow in Fig. 4(e)) to support the sample transfer tray 1 by the angle adjustment stage 52 ((Fig. 4(e)). Then, by rotating the angle adjustment stage 52, the sample transfer tray 1 is rotated. Thereby, the orientation (angle) of the silicon sample on the sample transfer tray 1 can be adjusted. Then, the angle adjustment stage 52 is moved downward (in the direction of the arrow in Fig. 4(f)) to release the support by the angle adjustment stage 52, and the sample transfer tray 1 is placed on the tray transfer lanes 51A and 51B (Fig. 4(f)).

[0034] The tray transfer lanes 51A and 51B move the sample transfer tray 1 on the lanes to the measurement position inside the FT-IR device 2 by means of a belt conveyor mechanism (Fig. 4(g)). An infrared path 20 is installed above and below the measurement position, with one emitting infrared rays and the other receiving infrared rays. The dotted arrows in Fig. 4(g) schematically show the infrared ray L. By performing FT-IR measurement in this way, the infrared spectrum of the silicon sample is obtained.

[0035] After the FT-IR measurement, the sample transfer tray 1 on the lanes is carried out of the FT-IR device 2 by the belt conveyor mechanism of the sample transfer lanes 51A and 51B (Fig. 4(h)). Then, by moving the tray receiving lanes 50A and 50B upward (in the direction of the arrow in Fig. 4(i)), the sample transfer tray 1 is placed on the tray receiving lanes 50A and 50B (Fig. 4(i)).

[0036] The tray transfer arm 4 extends its arm part to receive the sample transfer tray 1 on the tray receiving lanes 50A and 50B onto the arm part (Fig. 4(j)). Then, the direction of the arm part of the tray transfer arm 4 is changed to re-accommodate the sample transfer tray 1 into the cassette 3 (Fig. 4(k)).

[0037] Next, the tray transfer arm 4 is moved upward (in the direction of the thick arrow in Fig. 4(l)) with the arm portion retracted. When the arm portion is extended at this position, the sample transfer tray 1 arranged above the tray on which the silicon sample that has been FT-IR measured in the cassette 3 is placed can be placed on the arm portion of the tray transfer arm 4. Thereafter, by sequentially repeating the unloading of the tray shown in Figs. 4(b) to (k) and the re-accommodation into the cassette, FT-IR measurement of the silicon samples respectively arranged on the plurality of sample transfer trays 1 in the cassette 3 can be performed. Further, for example, when a plurality of silicon samples are placed on the sample transfer tray 1 as shown in Fig. 5, after the sample transfer tray 1 is discharged outside the FT-IR apparatus and before it is re-accommodated into the cassette 3, the sample transfer tray 1 is rotated by the angle adjustment stage 52 to adjust the orientation of the silicon samples on the sample transfer tray 1, and then this sample transfer tray 1 is transferred into the FT-IR apparatus 2 to perform FT-IR measurement repeatedly, whereby FT-IR measurement of the plurality (four in Fig. 5) of silicon samples on the sample transfer tray 1 can be sequentially performed.

[0038] By using the sample transfer tray, for example, as described above, a series of processes from loading to unloading of the sample to be measured into the FT-IR apparatus can be automated regardless of the shape and size of the sample to be measured, and the lead time of quality inspection can be shortened.

[0039] One aspect of the present invention relates to a sample transfer tray in the shape of a metal disc, having a notch groove at the outer edge of the disc shape and including a through-opening penetrating the front and back surfaces of the tray in the sample placement area of the sample placement surface on which a silicon sample cut out from a silicon ingot is placed. The details of such a sample transfer tray are as described above. The sample transfer tray can be used for loading a sample into the FT-IR measurement apparatus and unloading the sample from the FT-IR measurement apparatus.

Industrial Applicability

[0040] One aspect of the present invention is useful in the field of manufacturing single crystal silicon wafers. By automating the quality inspection of inspection samples, the lead time can be shortened, thereby reducing the workload of workers, and ultimately improving the wafer production yield. As a result, it becomes possible to improve the productivity and quality of products, meet more demand, and improve the productivity of the entire semiconductor industry. In this way, one aspect of the present invention can contribute to the promotion of economic growth (development goal: SDGs8).

Claims

1. A sample placement step of placing a silicon sample cut out from a silicon ingot on a sample placement surface of a sample carrier tray outside the FT-IR apparatus; A tray loading step of placing the sample carrier tray on which the silicon sample is placed at a measurement position inside the FT-IR apparatus; A measurement step of performing FT-IR measurement of the silicon sample on the sample carrier tray inside the FT-IR apparatus; A tray unloading step of unloading the sample carrier tray on which the silicon sample is placed outside the FT-IR apparatus after the FT-IR measurement; A silicon sample analysis method comprising the above steps.

2. The sample carrier tray has a through-opening; The silicon sample analysis method according to claim 1, wherein in the sample placement step, the silicon sample is placed on a region including the through-opening of the sample placement surface of the sample carrier tray.

3. The sample placement surface has a recess; The silicon sample analysis method according to claim 1, wherein in the sample placement step, the silicon sample is placed in the recess.

4. The silicon sample analysis method according to claim 1, further comprising a sample preparation step of cutting out a disc-shaped sample wafer from the silicon ingot and cutting out the silicon sample from the sample wafer.

5. The sample carrier tray according to claim 1 has a notch groove at its outer edge.

6. The silicon sample analysis method according to claim 1, wherein the sample placement surface of the sample carrier tray is an anodized surface.

7. Further comprising a cassette preparation step of preparing a cassette in which a plurality of sample carrier trays with silicon samples placed on their sample placement surfaces are accommodated at intervals in the height direction; In the tray loading step, one sample carrier tray with a silicon sample placed on its sample placement surface is taken out from the cassette, transported into the FT-IR apparatus, and placed at the measurement position; The silicon sample analysis method according to claim 1, wherein in the tray unloading step, the sample carrier tray with the silicon sample placed on it after the FT-IR measurement is unloaded outside the FT-IR apparatus and rearranged in the cassette.

8. The sample carrier tray has a through-opening; In the sample placement step, the silicon sample is placed on a region including the through-opening of the sample placement surface of the sample transfer tray. The method further includes a sample preparation step of cutting out a disk-shaped sample wafer from the silicon ingot and cutting out the silicon sample from the sample wafer. The sample transfer tray has a notch groove at its outer edge. The sample placement surface of the sample transfer tray is an anodized surface. The method further includes a cassette preparation step of preparing a cassette in which a plurality of sample transfer trays with silicon samples placed on the sample placement surfaces are accommodated at intervals in the height direction. In the tray loading step, one sample transfer tray with a silicon sample placed on the sample placement surface is taken out from the cassette, transported into the FT-IR device, and placed at the measurement position. The silicon sample analysis method according to claim 1, wherein in the tray unloading step, after the FT-IR measurement, the sample transfer tray with the silicon sample placed thereon is unloaded outside the FT-IR device and rearranged in the cassette.

9. The sample placement surface has a recess. The silicon sample analysis method according to claim 8, wherein in the sample placement step, the silicon sample is placed in the recess.

10. A disk-shaped tray made of metal, having a notch groove at the outer edge of the disk shape, and including a through-opening that penetrates the front and back surfaces of the tray in a sample placement region of the sample placement surface for placing a silicon sample cut out from a silicon ingot, the sample transfer tray.

11. The sample transfer tray according to claim 10, wherein the sample placement surface has a recess, and the sample placement region is in the recess.

12. The sample transfer tray according to claim 11, wherein the outer shape of the recess is substantially the same as the outer shape of the sample.

13. The sample transfer tray according to any one of claims 10 to 12, wherein the metal is aluminum and the sample placement surface is an anodized surface.

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