Semiconductor device

Abstract

To provide a novel layout.SOLUTION: A semiconductor device has: a first conductive layer; a first insulation layer on the first conductive layer; an oxide semiconductor layer on the first insulation layer; a second conductive layer electrically connected with the oxide semiconductor layer; a third conductive layer electrically connected with the oxide semiconductor layer; a fourth conductive layer on the first insulation layer; a second insulation layer on the oxide semiconductor layer, on the second conductive layer, on the third conductive layer and on the fourth conductive layer; a fifth conductive layer on the second insulation layer; a first opening in the first insulation layer and the second insulation layer; and a second opening in the second insulation layer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The technical field relates to semiconductor devices and the like.

Background Art

[0002] Improvement of layout is an eternal issue.

[0003] For example, Patent Document 1 discloses a semiconductor device having a new layout.

[0004] Patent Document 1 discloses the layout of two transistors.

[0005] The concept of Patent Document 1 is to arrange one of the two transistors above the other of the two transistors. above it.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] Although the concept of Patent Document 1 is excellent, the number of processes increases.

[0008] An object is to provide a new layout based on a concept different from that of Patent Document 1. for.

Means for Solving the Problems

[0009] <Basic Elements of Transistor> A transistor includes at least a first gate electrode, a first insulator above the first gate electrode. An insulating layer, a semiconductor layer above the first insulating layer, a source electrode electrically connected to the semiconductor layer, and has a drain electrode electrically connected to the semiconductor layer.

[0010] <Basic element of a circuit> The first gate electrode of the first transistor is electrically connected to one of the source electrode or the drain electrode of the second transistor.

[0011] Note that, in order to distinguish the two transistors, ordinal numbers are attached to the "transistor".

[0012] <An example of a concept> Above the semiconductor layer of the first transistor, the source electrode of the first transistor, the first transistor has a drain electrode, a semiconductor layer of the second transistor, a source electrode of the second transistor, and there is a second insulating layer above the drain electrode of the second transistor.

[0013] There is a conductive layer above the second insulating layer.

[0014] The first insulating layer has a first opening.

[0015] The second insulating layer has a second opening and a third opening.

[0016] The conductive layer is electrically connected to the first gate electrode of the first transistor through the first opening and the second opening.

[0017] The conductive layer is electrically connected to one of the source electrode or the drain electrode of the second transistor through the third opening.

[0018] The conductive layer has a region overlapping with the channel formation region of the first transistor.

[0019] ​​The conductive layer has at least two functions.

[0020] One of the two functions is the function as a connection electrode.

[0021] The other of the two functions is the function as the second gate electrode of the first transistor.

[0022] Since the first transistor has two gate electrodes, the electrical characteristics of the first transistor are good. For example, the mobility of the first transistor having two gate electrodes is high .

[0023] That is, by devising the layout of the connection electrode, the electrical characteristics of the first transistor are improved.

[0024] An example of the new layout is to dispose the connection electrode above the channel formation region of the first transistor via the second insulating layer.

[0025] <Transistor having an oxide semiconductor layer (OS-FET)> Although the semiconductor layer of the transistor is not limited, it is interesting that the semiconductor layer is an oxide semiconductor layer.

[0026] Why it is interesting will become clear from the description in this specification.

[0027] <Examples of the disclosed invention> For example, a semiconductor device has a first conductive layer, a first insulating layer above the first conductive layer , an oxide semiconductor layer above the first insulating layer, a second conductive layer electrically connected to the oxide semiconductor layer, a third conductive layer electrically connected to the oxide semiconductor layer, a fourth conductive layer above the first insulating layer, and above and ​Above the second conductive layer, above the third conductive layer, and above the fourth conductive layer, there is a second insulating layer, and above the second insulating layer, there is a fifth conductive layer. The first insulating layer has a first opening, the second insulating layer has a second opening, the second insulating layer has a third opening, and the fifth conductive layer is electrically connected to the first conductive layer through the first opening and the second opening, and the fifth conductive layer is electrically connected to the fourth conductive layer through the third opening. The fourth conductive layer has a first region that can function as one of the source electrode or the drain electrode of the transistor, and the oxide semiconductor layer has a second region that overlaps with the first conductive layer and the fifth conductive layer. For example, a semiconductor device has a first conductive layer, has a first insulating layer above the first conductive layer , has an oxide semiconductor layer above the first insulating layer, has a second conductive layer electrically connected to the oxide semiconductor layer, has a third conductive layer electrically connected to the oxide semiconductor layer, has a fourth conductive layer above the first insulating layer, has a sixth conductive layer above the first insulating layer, has a second insulating layer above the oxide semiconductor layer, above the second conductive layer, above the third conductive layer, and above the fourth conductive layer, and has a fifth conductive layer above the second insulating layer. The first insulating layer has a first opening. The second insulating layer has a second opening, the second insulating layer has a third opening, the sixth conductive layer is electrically connected to the first conductive layer through the first opening, the fifth conductive layer is electrically connected to the sixth conductive layer through the second opening, and the fifth conductive layer

[0028] ​​​​​​​​​​electrically connected to the fourth conductive layer through the third opening, and the fourth conductive layer has a first region that can function as one of a source electrode or a drain electrode of a transistor, and the oxide semiconductor layer has a second region that overlaps with the first conductive layer and the fifth conductive layer.

[0029] For example, the second opening does not overlap with the first opening.

[0030] For example, the semiconductor device has an oxide layer between the oxide semiconductor layer and the second insulating layer. The first conductive layer has a third region that does not overlap with the oxide layer, and the fifth conductive layer has a fourth region that overlaps with the third region.

Advantages of the Invention

[0031] A new layout based on a concept different from the prior art can be provided.

Brief Description of the Drawings

[0032]

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Embodiments for Carrying Out the Invention

[0033] The embodiments will be described in detail with reference to the drawings as necessary.

[0034] Each of the contents shown in the embodiments is merely an example.

[0035] Those skilled in the art will easily understand that the form and details can be changed without departing from the spirit of the invention.

[0036] Therefore, the invention should not be construed as being limited only to the contents shown in the embodiments.

[0037] In the embodiments, repeated descriptions of the same reference numerals may be omitted.

[0038] ​In the embodiments and the drawings, the same reference numerals are used for the same parts or parts having similar functions. Please note that this is the case.

[0039] Also, it is possible to combine each of the contents shown in the respective embodiments.

[0040] (Embodiment 1) Examples of semiconductor devices are shown in FIGS. 1 to 3.

[0041] FIG. 1(A) is an example of a circuit element.

[0042] FIG. 1(B) is a top view showing an example of a layout.

[0043] FIG. 1(C) is a top view showing an example of a layout.

[0044] FIG. 2 is an example of a cross-sectional view taken along the line A - B of FIG. 1(B).

[0045] FIG. 3 is an example of a cross-sectional view taken along the line C - D of FIG. 1(B).

[0046] In FIG. 1(A), one of the source electrode or the drain electrode of the transistor Tr2 is electrically connected to the first gate electrode of the transistor Tr1.

[0047] In FIG. 1(A), one of the source electrode or the drain electrode of the transistor Tr2 is electrically connected to the second gate electrode of the transistor Tr1.

[0048] For the following description, please refer to FIGS. 1 to 3 as necessary.

[0049] <Conductive layer 21, conductive layer 22> There is a conductive layer 21 above the substrate 10.

[0050] There is a conductive layer 22 above the substrate 10.

[0051] The conductive layer 21 has a region that can function as the first gate electrode of the transistor Tr1.

[0052] The conductive layer 22 has a region that can function as the gate electrode of the transistor Tr2.

[0053] For example, the conductive layer 21 and the conductive layer 22 may be formed through a process of etching the same conductive layer.

[0054] In FIGS. 2 to 3, the conductive layer 21 is in contact with the substrate 10, but it is possible to form an insulating layer having a function as an underlying insulating layer between the substrate 10 and the conductive layer 21.

[0055] <Insulating layer 30> There is an insulating layer 30 above the conductive layer 21 and the conductive layer 22.

[0056] The insulating layer 30 has a region that can function as the gate insulating layer of the transistor Tr1.

[0057] The insulating layer 30 has a region that can function as the gate insulating layer of the transistor Tr2.

[0058] <Semiconductor layer 41, Semiconductor layer 42> There is a semiconductor layer 41 above the insulating layer 30.

[0059] There is a semiconductor layer 42 above the insulating layer 30.

[0060] The semiconductor layer 41 has a region overlapping with the conductive layer 21.

[0061] The semiconductor layer 42 has a region overlapping with the conductive layer 22.

[0062] ​​​​​​The semiconductor layer 41 has a channel formation region of the transistor Tr1.

[0063] The semiconductor layer 42 has a channel formation region of the transistor Tr2.

[0064] Since the off-currents of the transistor Tr1 and the transistor Tr2 are small, it is preferable that each of the semiconductor layer 4 1 and the semiconductor layer 42 is an oxide semiconductor layer.

[0065] For example, the semiconductor layer 41 and the semiconductor layer 42 may be formed through a process of etching the same semiconductor layer. formed.

[0066] <Conductive layers 51, 52, 53, 54> Above the insulating layer 30 and the semiconductor layer 41, there is a conductive layer 51 electrically connected to the semiconductor layer 41. is present.

[0067] Above the insulating layer 30 and the semiconductor layer 41, there is a conductive layer 52 electrically connected to the semiconductor layer 41. is present.

[0068] Above the insulating layer 30 and the semiconductor layer 42, there is a conductive layer 53 electrically connected to the semiconductor layer 42. is present.

[0069] Above the insulating layer 30 and the semiconductor layer 42, there is a conductive layer 54 electrically connected to the semiconductor layer 42. is present.

[0070] The conductive layer 51 has a region overlapping with the semiconductor layer 41.

[0071] The conductive layer 52 has a region overlapping with the semiconductor layer 41.

[0072] The conductive layer 53 has a region overlapping with the semiconductor layer 42.

[0073] The conductive layer 54 has a region overlapping with the semiconductor layer 42.

[0074] The conductive layer 51 has a region that can function as one of the source electrode or the drain electrode of the transistor Tr1. It has a region that can function as one of the source electrode or the drain electrode of the transistor Tr1.

[0075] The conductive layer 52 has a region that can function as the other of the source electrode or the drain electrode of the transistor Tr1. It has a region that can function as the other of the source electrode or the drain electrode of the transistor Tr1.

[0076] The conductive layer 53 has a region that can function as one of the source electrode or the drain electrode of the transistor Tr2. It has a region that can function as one of the source electrode or the drain electrode of the transistor Tr2.

[0077] The conductive layer 54 has a region that can function as the other of the source electrode or the drain electrode of the transistor Tr2. It has a region that can function as the other of the source electrode or the drain electrode of the transistor Tr2.

[0078] For example, the conductive layer 51, the conductive layer 52, the conductive layer 53, and the conductive layer 54 may be formed through a process of etching the same conductive layer. They may be formed through a process of etching the same conductive layer.

[0079] In addition, when layers overlap in each top view, there are cases where the region of the layer located on the lower side is indicated by a dashed line. For example, in FIG. 1(B), the semiconductor layer 42 below the conductive layer 53 is indicated by a dashed line. Also, a part of the dashed line may be omitted.

[0080] The transistors Tr1 and Tr2 in FIGS. 1 to 3 have a top contact structure. They have a top contact structure.

[0081] The top contact structure is a structure having a source electrode and a drain electrode above the semiconductor layer. It is a structure having a source electrode and a drain electrode above the semiconductor layer.

[0082] For example, it is preferable that the source electrode and the drain electrode are in contact with the upper surface of the semiconductor layer.

[0083] However, the structures of transistor Tr1 and transistor Tr2 are not limited to that of the top contact structure. For example, it is possible to apply a bottom contact structure to transistor Tr1 and transistor Tr2.

[0084] For example, it is possible to apply a bottom contact structure to transistor Tr1 and transistor Tr2. is possible.

[0085] The bottom contact structure is a structure having a source electrode and a drain electrode below a semiconductor layer. is.

[0086] In the top contact structure and the bottom gate structure, each of the source electrode and the drain electrode is electrically connected to the semiconductor layer. is electrically connected to the semiconductor layer.

[0087] <oxide layer 61, insulating layer 62> There is an oxide layer 61 above the semiconductor layer 41, the semiconductor layer 42, the conductive layer 51, the conductive layer 52, the conductive layer 53, and the conductive layer 54. is above.

[0088] There is an insulating layer 62 above the oxide layer 61.

[0089] The oxide layer 61 is an oxide semiconductor layer or an oxide insulating layer.

[0090] It is possible not to form the oxide layer 61.

[0091] However, when each of the semiconductor layer 41 and the semiconductor layer 42 is an oxide semiconductor layer, oxygen can be supplied from the oxide layer 61 to each of the semiconductor layer 41 and the semiconductor layer 42. is possible.

[0092] By the supply of oxygen, the oxygen deficiency of the semiconductor layer 41 and the semiconductor layer 42 is reduced.

[0093] Each of the oxide layer 61 and the insulating layer 62 is the second gate insulating layer of the transistor Tr1. It has a region that can function as

[0094] <Openings 81 and 82> As shown in an example in FIG. 3, there is an opening 81 that penetrates the insulating layer 30, the oxide layer 61, and the insulating layer 62.

[0095] Opening 81 has an opening formed in the insulating layer 30, an opening formed in the oxide layer 61, and an opening formed in the insulating layer 62.

[0096] Also, as shown in an example in FIG. 3, there is an opening 82 that penetrates the oxide layer 61 and the insulating layer 62 .

[0097] Opening 82 has an opening formed in the oxide layer 61 and an opening formed in the insulating layer 62. .

[0098] The conductive layer 21 has a region that overlaps with the opening 81.

[0099] The conductive layer 53 has a region that overlaps with the opening 82.

[0100] Each of the openings 81 and 82 functions as a contact hole.

[0101] For example, the openings 81 and 82 can be formed by performing etching only once. It can be done.

[0102] <Conductive layer 71> There is a conductive layer 71 above the insulating layer 62.

[0103] The conductive layer 71 is electrically connected to the conductive layer 21 through the opening 81.

[0104] The conductive layer 71 is electrically connected to the conductive layer 53 through the opening 82.

[0105] The conductive layer 71 has a function as a connection electrode.

[0106] The conductive layer 71 has a region overlapping with the semiconductor layer 41.

[0107] The conductive layer 71 has a region that can function as the second gate electrode of the transistor Tr1. region.

[0108] For example, when the semiconductor device is a display device, the conductive layer 71 and the pixel electrode may be formed through a process of etching the same conductive layer. formed.

[0109] For example, when the semiconductor device is a display device, the conductive layer 71 and the common electrode may be formed through a process of etching the same conductive layer. formed.

[0110] The pixel electrode is the first electrode of the display element.

[0111] The common electrode is the second electrode of the display element. <Concept>

[0112] The conductive layer 71 has at least two functions.

[0113] One of the two functions is the function as a connection electrode.

[0114] The other of the two functions is the function as the second gate electrode of the transistor Tr1.

[0115] Since the transistor Tr1 has two gate electrodes, the electrical characteristics of the transistor Tr1 are good. characteristics are good.

[0116] By devising the layout of the connection electrode, the electrical characteristics of the transistor Tr1 are improved. improved.

[0117] It is possible to have the perspective that "the bridge of the connection electrode spans between the opening 81 and the opening 82". It is possible.

[0118] Since there is a semiconductor layer 41 between the opening 81 and the opening 82, it is possible to have the perspective that "there is a semiconductor layer 41 under the bridge of the connection electrode". It is possible.

[0119] Since the opening 81, the semiconductor layer 41, and the opening 82 are arranged along the channel width direction of the transistor Tr1, the shape of the conductive layer 71 can be simplified. For example, in FIG. 1, the conductive layer 71 is rectangular.

[0120] For example, in FIG. 1, the conductive layer 71 is rectangular.

[0121] When the channel length direction of the transistor Tr1 intersects with the channel length direction of the transistor Tr2, the semiconductor layer 42, the opening 81, the semiconductor layer 41, and the opening 82 can be arranged along the channel width direction of the transistor Tr1. For example, refer to FIG. 1(C). For example, refer to FIG. 1(C).

[0122] For example, refer to FIG. 1(C).

[0123] The layout of FIG. 1(C) is simpler than the layout of FIG. 1(B).

[0124] FIG. 1(C) can arrange the transistor Tr1 and the transistor Tr2 with a smaller area than FIG. 1(B). For example, the transistor Tr1 and the transistor Tr2 can be arranged with a smaller area than FIG. 1(B).

[0125] Since the longitudinal direction of the conductive layer 71 intersects with the channel length direction of the transistor Tr1, the parasitic capacitance formed between the conductive layer 71 and the conductive layer 51 can be reduced. For example, the overlapping area between the conductive layer 71 and the conductive layer 51 can be reduced.

[0126] For example, the overlapping area between the conductive layer 71 and the conductive layer 51 can be reduced.

[0127] Since the longitudinal direction of the conductive layer 71 intersects with the channel length direction of the transistor Tr1, the parasitic capacitance formed between the conductive layer 71 and the conductive layer 52 can be reduced.

[0128] For example, the overlapping area between the conductive layer 71 and the conductive layer 52 can be reduced.

[0129] For example, in FIG. 1, the conductive layer 71 has an area that does not overlap with the conductive layer 51.

[0130] For example, in FIG. 1, the conductive layer 71 has an area that does not overlap with the conductive layer 52.

[0131] Since the area of the opening is large, it is preferable that the number of openings is minimized.

[0132] Increasing the number of gate electrodes increases the number of openings. Therefore, it is preferable that the number of gate electrodes of the transistor Tr2 is only one.

[0133] A transistor having only one gate electrode is named a single-gate transistor. named.

[0134] A single-gate transistor having a gate electrode below the semiconductor layer is named a bottom-gate type transistor.

[0135] A transistor having two gate electrodes is named a dual-gate transistor. .

[0136] (Embodiment 2) An example of a semiconductor device is shown in FIG. 4.

[0137] In FIG. 4, there is an opening 81 between the opening 82 and the semiconductor layer 41.

[0138] FIG. 4(A) is the same as FIG. 1(A).

[0139] Figure 4(B) is the same as Figure 1(B), but the position of the opening 81 is different.

[0140] Figure 4(C) is the same as Figure 1(C), but the position of the opening 81 is different.

[0141] In Figure 4, compared with Figure 1, the opening 81 is approaching the opening 82.

[0142] In Figure 4, compared with Figure 1, the resistance between the opening 81 and the opening 82 decreases.

[0143] The content of Embodiment 1 can be applied to this embodiment.

[0144] (Embodiment 3) An example of a semiconductor device is shown in Figure 5.

[0145] The semiconductor device shown in Figure 5 can have a plurality of openings 81.

[0146] In Figure 5, there are an opening 81a and an opening 81b.

[0147] The cross-sectional structure of the opening 81a and the opening 81b is the same as that of the opening 81.

[0148] In Figure 5, there is a semiconductor layer 41 between the opening 81a and the opening 81b.

[0149] In Figure 5, there is an opening 81b between the opening 82 and the semiconductor layer 41.

[0150] Figure 5(A) is the same as Figure 1(A).

[0151] Figure 5(B) is the same as Figure 1(B), but the number of the openings 81 is different.

[0152] Figure 5(C) is the same as Figure 1(C), but the number of the openings 81 is different.

[0153] By increasing the number of openings 81, the contact resistance can be reduced as compared with FIG. 1. 。

[0154] The contents of Embodiments 1 to 2 can be applied to this embodiment.

[0155] (Embodiment 4) Examples of semiconductor devices are shown in FIGS. 6 to 10.

[0156] FIG. 6 is an example in which a transistor Tr3 is added to FIG. 1.

[0157] FIG. 7 is an example in which a transistor Tr3 is added to FIG. 4.

[0158] FIG. 8 is an example in which a transistor Tr3 is added to FIG. 5.

[0159] FIG. 9 is an example in which a transistor Tr3 is added to FIG. 1.

[0160] FIG. 10 is an example in which a transistor Tr3 is added to FIG. 5.

[0161] In FIGS. 6 to 10, one of the source electrode or drain electrode of the transistor Tr3 is electrically connected to the gate electrode of the transistor Tr1.

[0162] The cross-sectional structures of FIGS. 6 to 10 are the same as those of FIGS. 2 to 3.

[0163] The semiconductor devices of FIGS. 6 to 10 have an insulating layer 30, similarly to FIGS. 1 to 3.

[0164] The insulating layer 30 has a region that can function as the gate insulating layer of the transistor Tr3 and has.

[0165] The semiconductor devices of FIGS. 6 to 10 have an oxide layer 61 and an insulating layer 62 similarly to FIGS. 1 to 3.

[0166] It is possible not to form the oxide layer 61.

[0167] <FIGS. 6 to 8> In FIGS. 6 to 8, the conductive layer 23 has a region that can function as the gate electrode of the transistor Tr3. and has a region where it can function.

[0168] In FIGS. 6(B), 7(B), and 8(B), the semiconductor layer 43 has the channel formation region of the transistor Tr 3.

[0169] Each of FIGS. 6(C), 7(C), and 8(C) has the semiconductor layers 42 and 43.

[0170] The semiconductor layers 42 and 43 have the channel formation region of the transistor Tr2.

[0171] The semiconductor layers 42 and 43 have the channel formation region of the transistor Tr3.

[0172] The semiconductor layers 42 and 43 have a region where they can function as the auxiliary wiring of the conductive layer 53 .

[0173] For example, it is preferable that the upper surface of the semiconductor layers 42 and 43 is in contact with the conductive layer 53.

[0174] The region where it can function as the auxiliary wiring of the conductive layer 53 overlaps with the conductive layer 53.

[0175] In FIGS. 6 to 8, the conductive layer 53 has a region where it can function as one of the source electrode or the drain electrode of the transistor Tr3. and has a region where it can function.

[0176] In FIGS. 6 to 8, the conductive layer 55 has a region where it can function as the other of the source electrode or the drain electrode of the transistor Tr3. and has a region where it can function.

[0177] For example, in FIGS. 6 to 8, the conductive layer 21, the conductive layer 22, and the conductive layer 23 may be formed through a process of etching the same conductive layer.

[0178] For example, in FIGS. 6(B), 7(B), and 8(B), the semiconductor layer 41, the semiconductor layer 42, and the semiconductor layer 43 may be formed through a process of etching the same semiconductor layer.

[0179] For example, in FIGS. 6(C), 7(C), and 8(C), the semiconductor layer 41 and the semiconductor layer 4243 may be formed through a process of etching the same semiconductor layer.

[0180] For example, in FIGS. 6 to 8, the conductive layer 51, the conductive layer 52, the conductive layer 53, the conductive layer 54, and the conductive layer 55 may be formed through a process of etching the same conductive layer.

[0181] <FIGS. 9 and 10> In FIGS. 9 and 10, the conductive layer 24 has a region that can function as the gate electrode of the transistor Tr3.

[0182] In FIGS. 9 and 10, the semiconductor layer 44 has a channel formation region of the transistor Tr3.

[0183] In FIGS. 9 and 10, the conductive layer 56 has a region that can function as one of the source electrode or the drain electrode of the transistor Tr3.

[0184] In FIGS. 9 and 10, the conductive layer 57 has a region that can function as the other of the source electrode or the drain electrode of the transistor Tr3.

[0185] ​​​​In FIGS. 9 and 10, there is an opening 83 that penetrates the oxide layer 61 and the insulating layer 62.

[0186] In FIGS. 9 and 10, the conductive layer 71 is electrically connected to the conductive layer 56 through the opening 83. connected.

[0187] As shown in FIGS. 9(C) and 10(C), the semiconductor layer 42, the semiconductor layer 41, and the semiconductor layer 4 4 can be arranged along the channel width direction of the transistor Tr1.

[0188] For example, the channel width direction of the transistor Tr1 can intersect the channel length direction of the transistor Tr2 or the channel length direction of the transistor Tr3. direction or the channel length direction of the transistor Tr3.

[0189] For example, in FIGS. 9 and 10, the conductive layer 21, the conductive layer 22, and the conductive layer 24 may be formed through a process of etching the same conductive layer. conductive layer.

[0190] For example, in FIGS. 9 and 10, the semiconductor layer 41, the semiconductor layer 42, and the semiconductor layer 44 may be formed through a process of etching the same semiconductor layer.

[0191] For example, in FIGS. 9 and 10, the conductive layer 51, the conductive layer 52, the conductive layer 53, the conductive layer 54 the conductive layer 56, and the conductive layer 57 may be formed through a process of etching the same conductive layer. good.

[0192] For example, in FIG. 9, the openings 81, 82, and 83 can be formed by performing only one etching. etching.

[0193] For example, in FIG. 10, the openings 81a, 81b, 82, and 83 can be formed by performing only one etching. etching.

[0194] The contents of Embodiments 1 to 3 can be applied to this embodiment.

[0195] (Embodiment 5) In FIGS. 1 to 10, the other of the source electrode or the drain electrode of transistor Tr2 can be electrically connected to one of the source electrode or the drain electrode of transistor Tr1 (in this embodiment, this connection is called connection D).

[0196] FIG. 11 is an example of a concept in which connection D is applied to FIG. 1.

[0197] FIG. 12 is an example of a concept in which connection D is applied to FIG. 4.

[0198] FIG. 13 is an example of a concept in which connection D is applied to FIG. 5.

[0199] FIG. 14 is an example of a concept in which connection D is applied to FIG. 6.

[0200] FIG. 15 is an example of a concept in which connection D is applied to FIG. 7.

[0201] FIG. 16 is an example of a concept in which connection D is applied to FIG. 8.

[0202] FIG. 17 is an example of a concept in which connection D is applied to FIG. 9.

[0203] FIG. 18 is an example of a concept in which connection D is applied to FIG. 10.

[0204] As shown in FIGS. 11 to 18, a conductive layer 5154 can be used instead of the conductive layers 51 and 54.

[0205] In FIGS. 11 to 18, the conductive layer 5154 is the source electrode of transistor Tr1 or ​It has a region that can function as one of the drain electrodes.

[0206] In FIGS. 11 to 18, the conductive layer 5154 has a region that can function as the source electrode of the transistor Tr2 or a region that can function as the other of the drain electrodes.

[0207] As in FIGS. 11(C), 12(C), 13(C), 17(C), and 18(C), the semiconductor layer 4142 can be used instead of the semiconductor layers 41 and 42. The semiconductor layer 4142 has a channel formation region of the transistor Tr1.

[0208] The semiconductor layer 4142 has a channel formation region of the transistor Tr2.

[0209] The semiconductor layer 4142 has a region that can function as an auxiliary wiring of the conductive layer 5154.

[0210] The region that can function as an auxiliary wiring of the conductive layer 5154 overlaps with the conductive layer 5154.

[0211] As in FIGS. 14(C), 15(C), and 16(C), the semiconductor layer 414243 can be used instead of the semiconductor layers 41, 4 2, and 43.

[0212] The semiconductor layer 414243 has a channel formation region of the transistor Tr1. The semiconductor layer 414243 has a channel formation region of the transistor Tr2.

[0213] The semiconductor layer 414243 has a channel formation region of the transistor Tr2.

[0214] The semiconductor layer 414243 has a channel formation region of the transistor Tr3.

[0215] The semiconductor layer 414243 has a channel formation region of the transistor Tr3.

[0216] ​The semiconductor layers 414243 have regions that can function as auxiliary wirings of the conductive layers 5154. It has.

[0217] The regions that can function as auxiliary wirings of the conductive layers 5154 overlap with the conductive layers 5154. .

[0218] The contents of Embodiments 1 to 4 can be applied to this embodiment.

[0219] (Embodiment 6) The semiconductor device is a device having semiconductor elements.

[0220] The type of semiconductor element is not limited.

[0221] For example, there are transistors and the like as semiconductor elements.

[0222] For example, as the transistor, there are field effect transistors and the like.

[0223] The type of semiconductor device is not limited.

[0224] For example, the semiconductor device can be selected from display devices, sensor devices, memory devices, and the like. .

[0225] The display device is a device having display elements.

[0226] The type of display element is not limited.

[0227] For example, the display element can be selected from EL elements (light emitting elements), liquid crystal elements, and the like.

[0228] The type of display device is not limited.

[0229] For example, the display device can be selected from EL display devices (light emitting devices), liquid crystal display devices, and the like. It can be selected.

[0230] An EL display device is a device having an EL element.

[0231] The EL element has a first electrode (e.g., a pixel electrode), a second electrode (e.g., a common electrode), and an EL layer.

[0232] For example, the EL layer is between the first electrode and the second electrode.

[0233] A liquid crystal display device is a device having a liquid crystal element.

[0234] The liquid crystal element has a first electrode (e.g., a pixel electrode), a second electrode (e.g., a common electrode), and a liquid crystal layer.

[0235] For example, the liquid crystal layer is between the first electrode and the second electrode.

[0236] The contents of Embodiments 1 to 5 can be applied to this embodiment.

[0237] (Embodiment 7) FIG. 19 shows a pixel circuit of a display device.

[0238] In FIG. 19, one of the source electrode or the drain electrode of transistor Tr2 is electrically connected to the first gate electrode of transistor Tr1.

[0239] In FIG. 19, one of the source electrode or the drain electrode of transistor Tr2 is electrically connected to the second gate electrode of transistor Tr1.

[0240] In FIG. 19, one of the source electrode or the drain electrode of transistor Tr1 is electrically connected to the first electrode (pixel electrode) of display element EL.

[0241] For example, display element EL is an EL element.

[0242] In FIGS. 19(B), 19(D), and 19(F), one of the source electrode or the drain electrode of transistor Tr3 is electrically connected to the first gate electrode of transistor Tr1. In FIGS. 19(B), 19(D), and 19(F), one of the source electrode or the drain electrode of transistor Tr3 is electrically connected to the second gate electrode of transistor Tr1. In FIGS. 19(C) and 19(D), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to the other of the source electrode or the drain electrode of transistor Tr1.

[0243] In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1. In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1. In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1.

[0244] In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1. In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1. In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1.

[0245] In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1. In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1. In FIGS. 19(E) and 19(F), the other of the source electrode or the drain electrode of transistor Tr2 is electrically connected to one of the source electrode or the drain electrode of transistor Tr1.

[0246] In FIG. 19, the parasitic capacitance of transistor Tr1 can be used as a holding capacitance.

[0247] In FIG. 19, a capacitive element having a function as a holding capacitance can be electrically connected to the first gate electrode of transistor Tr1. In FIG. 19, a capacitive element having a function as a holding capacitance can be electrically connected to the first gate electrode of transistor Tr1.

[0248] For example, a current is supplied to display element EL through transistor Tr1.

[0249] For example, a video signal can be written by turning on transistor Tr2.

[0250] In particular, for example, in FIGS. 19(C), 19(D), 19(E), and 19(F), by turning on the transistor Tr2, the variation in the threshold voltage of the transistor Tr1 can be corrected.

[0251] For example, by turning on the transistor Tr3, the video signal can be erased.

[0252] For example, the polarities of the transistors Tr1 in FIGS. 19(C) and 19(D) are opposite to the polarities of the transistors Tr1 in FIGS. 19(E) and 19(F).

[0253] The contents of Embodiments 1 to 6 can be applied to this embodiment.

[0254] (Embodiment 8) Examples of semiconductor devices are shown in FIGS. 20 to 22.

[0255] The oxide layer 61 is preferably island-shaped.

[0256] For example, as shown in FIG. 20, instead of the oxide layer 61, an oxide layer 61a and an oxide layer 61b can be used.

[0257] Since FIG. 20 is the same as FIG. 1(B), repeated description is omitted.

[0258] In FIG. 20, the shapes of the oxide layer 61a and the oxide layer 61b are each indicated by a broken line.

[0259] FIG. 21 is an example of a cross-sectional view taken along line A - B of FIG. 20.

[0260] FIG. 22 is an example of a cross-sectional view taken along line C - D of FIG. 20.

[0261] ​​Since the oxide layer 61a covers the semiconductor layer 41, the oxide layer 61a has regions in contact with the upper surface and side surfaces of the semiconductor layer 41. The conductive layer 21 has a first region that overlaps with the oxide layer 61a.

[0262] The conductive layer 21 has a first region that overlaps with the oxide layer 61a.

[0263] The conductive layer 21 has a second region that does not overlap with the oxide layer 61a between the oxide layer 61a and the opening 81. The conductive layer 21 has a second region that does not overlap with the oxide layer 61a between the oxide layer 61a and the opening 81.

[0264] The conductive layer 21 has a third region that does not overlap with the oxide layer 61a between the oxide layer 61a and the opening 82. The conductive layer 21 has a third region that does not overlap with the oxide layer 61a between the oxide layer 61a and the opening 82.

[0265] The first region is located between the second region and the third region.

[0266] Since each of the second region and the third region overlaps with the conductive layer 71, the conductive layer 71 approaches the side surface of the semiconductor layer 41. Since the conductive layer 71 approaches the side surface of the semiconductor layer 41, the carriers flowing through the side surface of the semiconductor layer 41 increase.

[0267] Since the oxide layer 61b covers the semiconductor layer 42, the oxide layer 61b has regions in contact with the upper surface and side surfaces of the semiconductor layer. The conductive layer 22 has a region that overlaps with the oxide layer 61b.

[0268] Since the oxide layer 61b covers the semiconductor layer 42, the oxide layer 61b has regions in contact with the upper surface and side surfaces of the semiconductor layer. The conductive layer 22 has a region that overlaps with the oxide layer 61b.

[0269] The conductive layer 22 has a region that overlaps with the oxide layer 61b.

[0270] The conductive layer 22 has a region that does not overlap with the oxide layer 61b.

[0271] The conductive layer 22 may not have a region that does not overlap with the oxide layer 61b.

[0272] When hydrogen is contained in the oxide semiconductor layer, the electrical characteristics of the transistor may deteriorate. When hydrogen is contained in the oxide semiconductor layer, the electrical characteristics of the transistor may deteriorate.

[0273] If the insulating layer 62 contains hydrogen, it is preferable that the semiconductor layer 41 does not contact the insulating layer 62. Preferably.

[0274] If the insulating layer 62 contains hydrogen, it is preferable that the semiconductor layer 42 does not contact the insulating layer 62. Preferably.

[0275] The content of Embodiments 1 to 7 can be applied to this embodiment.

[0276] (Embodiment 9) For example, in FIGS. 1 to 3, the etching time for forming the opening 81 is longer than the etching time for forming the opening 82. 2.

[0277] For example, if the conductive layer 58 is used as shown in FIGS. 23 to 26, the etching time for forming the opening 81 becomes the same as the etching time for forming the opening 82.

[0278] In FIGS. 23 to 26, compared with FIGS. 1 to 3, the etching process becomes easier.

[0279] Since FIG. 23 is the same as FIG. 1(B), repeated description is omitted.

[0280] FIG. 24 is an example of a cross-sectional view taken along the line C-D of FIG. 23.

[0281] Since FIG. 25 is the same as FIG. 1(B), repeated description is omitted.

[0282] FIG. 26 is an example of a cross-sectional view taken along the line E-F of FIG. 25.

[0283] The insulating layer 30 has an opening 81c.

[0284] The oxide layer 61 and the insulating layer 62 have an opening 81d.

[0285] The opening 81d has an opening in the oxide layer 61 and an opening in the insulating layer 62.

[0286] The conductive layer 58 is electrically connected to the conductive layer 21 through the opening 81c.

[0287] The conductive layer 71 is electrically connected to the conductive layer 58 through the opening 81d.

[0288] The conductive layer 71 is electrically connected to the conductive layer 53 through the opening 82.

[0289] For example, the conductive layer 51, the conductive layer 52, the conductive layer 53, the conductive layer 54, and the conductive layer 58 may be formed through a process of etching the same conductive layer.

[0290] For example, the opening 81d and the opening 82 can be formed by performing etching only once to form them.

[0291] In FIGS. 23 to 24, the opening 81d has a region overlapping with the opening 81c.

[0292] In FIGS. 25 to 26, since the opening 81d does not overlap with the opening 81c, disconnection of the conductive layer 71 can be prevented.

[0293] The contents of Embodiments 1 to 8 can be applied to this embodiment.

[0294] (Embodiment 10) The material of the substrate and the materials of each layer will be described.

[0295] Of course, the material of the substrate and the materials of each layer are not limited to only the materials exemplified in this embodiment alone.

[0296] <Layer> For example, the layer is a single film or a laminated film.

[0297] A single film is one film.

[0298] A laminated film is a plurality of films.

[0299] For example, the laminated film has at least a first film and a second film.

[0300] For example, the material of the first film is different from that of the second film.

[0301] For example, the material of the first film is the same as that of the second film.

[0302] For example, each of the first film and the second film can be selected from the films exemplified in the present embodiment and can be done.

[0303] <Material> For example, the substrate can be selected from a glass substrate, a plastic substrate, a metal substrate, etc. and can be.

[0304] For example, the conductive layer has a layer having a metal or a layer having an oxide conductor.

[0305] For example, the conductive layer has only a layer having a metal.

[0306] For example, the conductive layer has only a layer having an oxide conductor.

[0307] For example, the conductive layer has a layer having a metal and a layer having an oxide conductor.

[0308] For example, the metal can be selected from aluminum, gold, silver, copper, tungsten, titanium, molybdenum, chromium, niobium, nickel, cobalt, etc. and can be.

[0309] For example, the layer having a metal has a metal film, an alloy film, or a metal nitride film.

[0310] For example, the oxide conductor can be selected from indium tin oxide (ITO), indium tin oxide having silicon, and indium zinc oxide, etc.

[0311] For example, the oxide conductor has translucency.

[0312] For example, the first electrode (pixel electrode) or the second electrode (common electrode) has translucency.

[0313] For example, the first electrode (pixel electrode) or the second electrode (common electrode) has ITO.

[0314] For example, the oxide layer has an oxide semiconductor layer or an oxide insulating layer.

[0315] For example, the oxide layer has only an oxide semiconductor layer.

[0316] For example, the oxide layer has only an oxide insulating layer.

[0317] For example, the oxide layer has an oxide semiconductor layer and an oxide insulating layer.

[0318] For example, in the oxide layer, the oxide semiconductor layer is above the oxide insulating layer.

[0319] For example, in the oxide layer, the oxide semiconductor layer is below the oxide insulating layer.

[0320] For example, the insulating layer has an oxide insulating layer, a nitride insulating layer, or an organic insulating layer.

[0321] For example, the semiconductor layer has an oxide semiconductor layer or a silicon semiconductor layer.

[0322] The oxide insulating layer is a layer having an oxide insulator.

[0323] For example, the oxide insulator is silicon oxide, aluminum oxide, and gallium oxide It can be selected from etc.

[0324] For example, the oxide insulator can contain nitrogen.

[0325] The nitride insulating layer is a layer having a nitride insulator.

[0326] For example, the nitride insulator can be selected from silicon nitride, aluminum nitride, gallium nitride etc.

[0327] For example, the nitride insulator can contain oxygen.

[0328] The organic insulating layer is a layer having an organic insulator.

[0329] For example, the organic insulator can be selected from acrylic, polyimide, siloxane, etc. and so on.

[0330] The oxide semiconductor layer is a layer having an oxide semiconductor.

[0331] The silicon semiconductor layer is a layer having a silicon semiconductor.

[0332] For example, the silicon semiconductor can be selected from silicon, silicon gallium, silicon carbide, etc. and so on.

[0333] <oxide semiconductor> For example, the oxide semiconductor contains indium (In), tin (Sn), zinc (Zn), or gallium (Ga).

[0334] For example, the oxide semiconductor can be selected from indium oxide, tin oxide, zinc oxide, etc. and so on.

[0335] For example, the oxide semiconductor can be selected from indium zinc oxide, tin zinc oxide, etc. It can be cut.

[0336] For example, as the oxide semiconductor, an oxide having In, element M, and Zn can be used. It is possible.

[0337] For example, element M can be selected from typical metals, transition metals, etc.

[0338] For example, the typical metal can be selected from Ga, Al, Sn, etc.

[0339] For example, the transition metal can be selected from Ti, Hf, lanthanoids, actinoids, etc. It is possible.

[0340] <CAAC(C Axis Aligned Crystalline)> Since the oxide semiconductor layer has a crystal region with c-axis orientation along the direction X, the density of the oxide semiconductor layer increases. The density of the oxide semiconductor layer becomes high.

[0341] Since the density of the oxide semiconductor layer increases, it is possible to prevent the intrusion of H2O into the oxide semiconductor layer. It can be prevented.

[0342] For example, the direction X is a direction perpendicular to the surface of the oxide semiconductor layer.

[0343] For example, the angle formed by the c-axis and the surface of the oxide semiconductor layer is 90 degrees.

[0344] For example, the direction X is a direction substantially perpendicular to the surface of the oxide semiconductor layer.

[0345] For example, the angle formed by the c-axis and the surface of the oxide semiconductor layer is 80 degrees or more and 100 degrees or less.

[0346] The crystal region with c-axis orientation along the direction X is named CAAC (C Axis Aligned Crystalline). rystalline).

[0347] <Stacked film> It is interesting that the oxide semiconductor layer is a stacked film.

[0348] There are defects at the interface between the oxide semiconductor layer and the insulating layer.

[0349] In particular, when the insulating layer or the oxide semiconductor layer contains silicon, the defects at the interface between the oxide semiconductor layer and the insulating layer tend to increase.

[0350] By separating the channel from the defects, the reliability of the transistor is improved.

[0351] Since the oxide semiconductor layer is a specific stacked film, the channel can be separated from the interface between the oxide semiconductor layer and the insulating layer and the insulating layer.

[0352] For example, the oxide semiconductor layer has an oxide semiconductor film A and an oxide semiconductor film B.

[0353] For example, the oxide semiconductor film B is above the oxide semiconductor film A.

[0354] For example, the oxide semiconductor film B is below the oxide semiconductor film A.

[0355] For example, each of the oxide semiconductor film A and the oxide semiconductor film B contains indium (In), gallium (Ga), and zinc (Zn).

[0356] For example, the oxide semiconductor layer has an oxide semiconductor film A, an oxide semiconductor film B, and an oxide semiconductor film C.

[0357] For example, the oxide semiconductor film B is above the oxide semiconductor film A.

[0358] For example, the oxide semiconductor film C is below the oxide semiconductor film A.

[0359] For example, each of the oxide semiconductor film A, the oxide semiconductor film B, and the oxide semiconductor film C contains indium (In), gallium (Ga), and zinc (Zn).

[0360] For example, it is preferable that the ratio of gallium in the oxide semiconductor film B is high.

[0361] For example, it is preferable that the ratio of zinc in the oxide semiconductor film B is high.

[0362] For example, it is preferable that the ratio of gallium in the oxide semiconductor film C is high.

[0363] For example, it is preferable that the ratio of zinc in the oxide semiconductor film C is high.

[0364] For example, "the ratio of gallium in the oxide semiconductor film B / the ratio of indium in the oxide semiconductor film B" is larger than "the ratio of gallium in the oxide semiconductor film A / the ratio of indium in the oxide semiconductor film A".

[0365] For example, "the ratio of zinc in the oxide semiconductor film B / the ratio of indium in the oxide semiconductor film B" is larger than "the ratio of zinc in the oxide semiconductor film A / the ratio of indium in the oxide semiconductor film A".

[0366] For example, "the ratio of gallium in the oxide semiconductor film C / the ratio of indium in the oxide semiconductor film C" is larger than "the ratio of gallium in the oxide semiconductor film A / the ratio of indium in the oxide semiconductor film A".

[0367] For example, "the ratio of zinc in the oxide semiconductor film C / the ratio of indium in the oxide semiconductor film C" is larger than "the ratio of zinc in the oxide semiconductor film A / the ratio of indium in the oxide semiconductor film A". ​​​​

[0368] For example, in the oxide semiconductor film A, element M can be used instead of Ga.

[0369] For example, in the oxide semiconductor film B, element M can be used instead of Ga.

[0370] For example, in the oxide semiconductor film C, element M can be used instead of Ga.

[0371] For example, as the element M, the metals shown in this embodiment can be used.

[0372] Since the ratio of indium in the oxide semiconductor film is low, the band gap of the oxide semiconductor film becomes large. becomes large.

[0373] Since the ratio of indium in the oxide semiconductor film is high, the band gap of the oxide semiconductor film becomes small. becomes small.

[0374] If the oxide semiconductor layer is a stacked film, the channel is formed in the oxide semiconductor film having the smallest band gap. is formed.

[0375] For example, if the oxide semiconductor layer has the oxide semiconductor film A and the oxide semiconductor film B, the channel is formed in the oxide semiconductor film A. is formed.

[0376] For example, if the oxide semiconductor layer has the oxide semiconductor film A, the oxide semiconductor film B, and the oxide semiconductor film C, the channel is formed in the oxide semiconductor film A.

[0377] If the channel is formed in the oxide semiconductor film A, the channel is away from defects.

[0378] For example, the oxide semiconductor film A is CAAC.

[0379] For example, the oxide semiconductor film B or the oxide semiconductor film C has lower crystallinity than the oxide semiconductor film A. Yes.

[0380] For example, metal impurities such as nickel, copper, and cobalt move from a region with high crystallinity to a region with low crystallinity. Yes.

[0381] Since the crystallinity of the oxide semiconductor film B or the oxide semiconductor film C is lower than that of the oxide semiconductor film A, if so, the metal impurities are gettered into the oxide semiconductor film B or the oxide semiconductor film C.

[0382] That is, the metal impurities can be gettered from the channel.

[0383] For example, the clarity of the spots in electron beam diffraction is a criterion for judging crystallinity.

[0384] For example, if the spots in electron beam diffraction are clear, it can be judged that the crystallinity is high.

[0385] For example, if the spots in electron beam diffraction are unclear, it can be judged that the crystallinity is low.

[0386] By comparing the results of electron beam diffraction of the two films, the clarity can be judged. Yes.

[0387] Also, for example, as the oxide layer, an oxide semiconductor layer having a larger bandgap than the oxide semiconductor layer having the channel formation region can be used. Yes.

[0388] The contents of Embodiments 1 to 9 can be applied to this embodiment.

Description of Signs

[0389] 10 Substrate 21 Conductive layer 22 Conductive layer 23 Conductive layer 24 Conductive layer 30 Insulating layer 41 Semiconductor layer 42 Semiconductor layer 43 Semiconductor layer 44 Semiconductor layer 4142 Semiconductor layer 4243 Semiconductor layer 414243 Semiconductor layer 51 Conductive layer 52 Conductive layer 53 Conductive layer 54 Conductive layer 55 Conductive layer 56 Conductive layer 57 Conductive layer 58 Conductive layer 5154 Conductive layer 61 Oxide layer 61a Oxide layer 61b Oxide layer 62 Insulating layer 71 Conductive layer 81 Opening 81a Opening 81b Opening 81c Opening 81d Opening 82 Opening 83 Opening Tr1 Transistor Tr2 Transistor Tr3 Transistor EL display element

Claims

【Claim 1】 having a first conductive layer, having a first insulating layer above the first conductive layer, having an oxide semiconductor layer above the first insulating layer, having a second conductive layer electrically connected to the oxide semiconductor layer, having a third conductive layer electrically connected to the oxide semiconductor layer, having a fourth conductive layer above the first insulating layer, having a second insulating layer above the oxide semiconductor layer, above the second conductive layer, above the third conductive layer, and above the fourth conductive layer, having a fifth conductive layer above the second insulating layer, the first insulating layer having a first opening, the second insulating layer having a second opening, the second insulating layer having a third opening, the fifth conductive layer being electrically connected to the first conductive layer through the first opening and the second opening, the fifth conductive layer being electrically connected to the fourth conductive layer through the third opening, the fourth conductive layer having a first region that can function as one of a source electrode or a drain electrode of a transistor, the oxide semiconductor layer having a second region overlapping the first conductive layer and the fifth conductive layer, a semiconductor device.

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