Light emitting device

Abstract

To manufacture a flexible light emitting device that can be changed in shape and to manufacture a portable telephone in which such a light emitting device is incorporated.SOLUTION: A light emitting device includes: a first flexible substrate having a first electrode, a light emission layer on the first electrode, and a second electrode arranged on the light emission layer and having a projection; a semiconductor circuit; and a second flexible substrate having a third electrode electrically connected with the semiconductor circuit. The projection of the second electrode and the third electrode are electrically connected. There are provided the light emitting device, a manufacturing method thereof, and a portable device which has a housing having a length direction and a width direction, and in which the light emitting device is incorporated and the light emitting device is arranged above a front and the length direction of the housing.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The invention disclosed in this specification relates to a light-emitting device, a method for manufacturing the same, and a mobile phone. to.

Background Art

[0002] Conventionally, when manufacturing a light-emitting device having a light-emitting element, a semiconductor circuit for driving the light-emitting element is formed on a substrate such as a glass substrate using a semiconductor process, and an insulating film (planarization film) is formed on the semiconductor circuit, and a light-emitting element is formed thereon. That is, a semiconductor circuit for driving the light-emitting element and the light-emitting element are formed so as to be stacked in order from the bottom on the substrate. That is, the semiconductor circuit for driving the light-emitting element and the light-emitting element are formed so as to be stacked in order from the bottom on the substrate. order. was.

[0003] In the light-emitting device manufactured by the conventional manufacturing process, since the light-emitting element is formed on the semiconductor circuit for driving the light-emitting element, there are steps and the like caused by elements and wirings formed in the lower layer than the light-emitting element. (See Patent Document 1). existed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] As described above, one of the problems is that coverage defects and the like may occur due to steps and the like caused by elements and wirings formed in the lower layer than the light-emitting element. is.

[0006] In addition, a semiconductor circuit for driving the light-emitting element is formed, and further, a light-emitting element is manufactured on the semiconductor circuit. Then, one of the problems is that the production time becomes long and the production cost becomes high. This is the case.

[0007] In addition, since the light-emitting layer in the light-emitting element is vulnerable to moisture, it is also one of the problems that moisture must not be mixed into the light-emitting layer. This is one of the problems.

[0008] Also, when manufacturing a light-emitting element and a semiconductor circuit for driving the same on a hard substrate such as a glass substrate, since there is no flexibility and the shape cannot be changed, it is also one of the problems that it cannot be incorporated into electronic devices of various shapes. This is one of the problems. This is one of the problems.

[0009] Also, when manufacturing a light-emitting element and a semiconductor circuit for driving the same on a flexible substrate, although the shape of the substrate can be freely changed, when stress is applied, there is a risk that the light-emitting element and the semiconductor circuit for driving the same may be damaged. This is also one of the problems. This is one of the problems. This is one of the problems.

Means for Solving the Problems

[0010] In view of the above problems, in the invention disclosed in this specification, a semiconductor circuit for driving a light-emitting element and the light-emitting element are arranged on a flexible substrate, bonded together, and the light-emitting element and the semiconductor circuit for driving the same are electrically connected. The light-emitting element and the semiconductor circuit for driving the same are formed on separate substrates, separated from the substrates, and further arranged and bonded to the flexible substrate respectively. This may be done. The light-emitting element and the semiconductor circuit for driving the same are formed on separate substrates, separated from the substrates, and further arranged and bonded to the flexible substrate respectively. This may be done. This may be done.

[0011] Since the light-emitting element and the semiconductor circuit for driving the same are arranged on separate substrates, the semiconductor circuit is not formed in the lower layer than the light-emitting element. This is the case.

[0012] In addition, a convex portion is formed on a part of the light-emitting element, and the light-emitting element and the semiconductor circuit for driving the same are bonded together. When they are laminated, arrange them so that a gap is formed between them. Place a desiccant in the gap. This can be done.

[0013] In addition, since a light-emitting element and a semiconductor circuit for driving the same can be arranged on a flexible substrate, the shape can be changed even when they are bonded together. This can be done.

[0014] Furthermore, even when a light-emitting element and a semiconductor circuit for driving the same are arranged on a flexible substrate, arrange them so that a space (gap) for relaxing stress is formed between the light-emitting element and the semiconductor circuit for driving the same. This can be done. This can be done.

[0015] The invention disclosed in this specification relates to a light-emitting device having a first flexible substrate having a first electrode, a light-emitting layer on the first electrode, and a second electrode disposed on the light-emitting layer and having a convex portion, a semiconductor circuit, and a third electrode electrically connected to the semiconductor circuit, wherein the convex portion of the second electrode and the third electrode are electrically connected. This can be done. This can be done. This can be done. This can be done.

[0016] The invention relates to a light-emitting device characterized in that a desiccant is filled in a gap formed by the opposed arrangement of the first flexible substrate and the second flexible substrate. This can be done.

[0017] In addition, the invention disclosed in this specification relates to a light-emitting device having a first flexible substrate having a first electrode, a light-emitting layer on the first electrode, and a second electrode disposed on the light-emitting layer and having a convex portion, a semiconductor circuit, and a third electrode electrically connected to the semiconductor circuit, wherein the convex portion of the second electrode and the third electrode include anisotropic conductive particles. This can be done. This can be done. This can be done. It relates to a light-emitting device characterized by being electrically connected by a conductive film.

[0018] Covering the semiconductor circuit, having a structure of a fibrous body and an organic resin, and having the third electrode which is a conductive resin penetrating the structure. It relates to a light-emitting device characterized by having the above.

[0019] On a first substrate, a first separation layer, a first insulating film, a first electrode, a light-emitting layer, and a second electrode having a convex portion are formed. Using the first separation layer, the first substrate, the first insulating film, the first electrode, the light-emitting layer, and the second electrode are separated. On a first flexible substrate, a first adhesive layer is formed. By the first adhesive layer, the first insulating film, the first electrode, the light-emitting layer, and the second electrode are bonded onto the first flexible substrate. On a second substrate, a second separation layer, a second insulating film, a semiconductor circuit, and a third electrode electrically connected to the semiconductor circuit are formed. Using the second separation layer, the second substrate, the second insulating film, the semiconductor circuit, and the third electrode are separated. On a second flexible substrate, a second adhesive layer is formed. By the second adhesive layer, the second insulating film, the semiconductor circuit, and the third electrode are bonded onto the second flexible substrate. The convex portion of the second electrode and the third electrode are electrically connected. It relates to a method for manufacturing a light-emitting device characterized by the above.

[0020]

[0020] It relates to a method for manufacturing a light-emitting device characterized in that a desiccant is filled in a void formed by the first flexible substrate and the second flexible substrate being arranged opposite to each other.

[0021]

[0021] Also, the invention disclosed in this specification is that on a first substrate, a first separation layer, a first insulating film, a first Form an electrode of 1, a light-emitting layer, and a second electrode having a convex portion, and use the first separation layer to Separate the first substrate, the first insulating film, the first electrode, the light-emitting layer, and the second electrode Then, form a first adhesive layer on the first flexible substrate, and by means of the first adhesive layer, On the first flexible substrate, bond the first insulating film, the first electrode, the light-emitting layer, and The second electrode, form a second separation layer, a second insulating film, a semiconductor circuit, And a third electrode electrically connected to the semiconductor circuit on a second substrate, and use the second separation layer to Separate the second substrate, the second insulating film, the semiconductor circuit, and the third electrode, and form a second Adhesive layer on the second flexible substrate, and by means of the second adhesive layer, bond the second Insulating film, the semiconductor circuit, and the third electrode on the second flexible substrate, Form an anisotropic conductive film containing conductive particles between the first flexible substrate and the second flexible substrate, and electrically connect the convex portion of the second electrode and the third electrode with the anisotropic conductive Film. The present invention relates to a method for manufacturing a light-emitting device.

[0022] Cover the semiconductor circuit to form a structure having a fibrous body and an organic resin, and form a conductive resin penetrating the structure as the third electrode. The present invention relates to a method for manufacturing a light-emitting device.

[0023] In addition, the invention disclosed in this specification includes a first flexible substrate having a first electrode, a light-emitting layer on the first electrode, and a second electrode disposed on the light-emitting layer and having a convex portion, And a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit. ​​​​The second substrate, the convex portion of the second electrode, and the third electrode are electrically connected. A light-emitting device characterized by the above, a housing incorporating the light-emitting device, and having a longitudinal direction and a lateral direction The light-emitting device is arranged on the front surface and the upper part in the longitudinal direction of the housing. This is the gist of a mobile phone. Regarding a mobile phone.

Effects of the Invention

[0024] As a result, since the semiconductor circuit is not formed in the layer below the light-emitting element, it is possible to suppress the occurrence of cover edge defects due to steps. It is possible to suppress the occurrence of cover edge defects due to steps.

[0025] In addition, since a desiccant can be arranged in the gap between the light-emitting element and the semiconductor circuit that drives it, it is possible to prevent moisture from entering the light-emitting layer. It is possible to prevent moisture from entering the light-emitting layer.

[0026] In addition, since the light-emitting element and the semiconductor circuit that drives it can be arranged on the flexible substrate, the shape can be changed even when they are bonded together, and they can be incorporated into electronic devices of various shapes. It is possible to change the shape even when they are bonded together, and they can be incorporated into electronic devices of various shapes. They can be incorporated into electronic devices of various shapes.

[0027] Furthermore, since a space (gap) is formed between the light-emitting element arranged on the flexible substrate and the semiconductor circuit that drives it, the stress can be relaxed even when the flexible substrate is bent. The stress can be relaxed even when the flexible substrate is bent.

Brief Description of the Drawings

[0028]

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Embodiments for Carrying Out the Invention

[0029] Hereinafter, embodiments of the invention disclosed in this specification will be described with reference to the drawings. However, the invention disclosed in this specification can be implemented in many different modes, and it is easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and scope of the invention disclosed in this specification. Therefore, it should not be construed as being limited to the description of this embodiment. In the drawings shown below, the same reference numerals are given to the same parts or parts having the

[0030] same function, and the repeated description thereof will be omitted. In this specification, a semiconductor circuit refers to a circuit that functions by using a semiconductor. Furthermore, a semiconductor device refers to an element and a device in general that function by using a semiconductor, and includes electrical devices such as

[0031] electronic circuits, liquid crystal display devices, light-emitting devices, etc., and electronic equipment on which such electrical devices are mounted.

[0032] [Embodiment 1] In this embodiment, a light-emitting device and a method for manufacturing the same will be described with reference to FIGS. 1, 2(A) to 2(C), 3(A) to 3(B), 4(A) to 4(B), 5(A) to 5(B), 6 (A) to 6(C), 7(A) to 7(D), 8(A) to 8(C), 9(A) to 9(C), 10(A) to 10(B), 11, 12, 14(A) to 14(B), 9. This will be described with reference to FIGS. 20 and 21.

[0033] First, regarding the light-emitting element and its manufacturing method, FIGS. 2(A) to 2(C), FIGS. 3(A) to 3 (B), FIGS. 4(A) to 4(B), FIGS. 5(A) to 5(B), and FIGS. 6(A) to 6(C) will be used for the description.

[0034] First, a separation layer 132, an underlayer film 102, and an electrode 111 are formed on a substrate 131 ( see FIG. 2(A)). As the substrate 131, a glass substrate, a quartz substrate, a semiconductor substrate, a ceramic substrate, or the like may be used.

[0035] As the underlayer film 102, any one of a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, or a silicon nitride film containing oxygen, or a laminated film of two or more of them may be used. The underlayer film 102 has a function of preventing moisture from mixing into the light-emitting layer 112 formed later.

[0036] As the separation layer 132, by a plasma CVD method, a sputtering method, or the like, tungsten ( W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium ( Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (I r), silicon (Si), an element selected therefrom, or an alloy material or a compound material mainly composed of the above elements is formed as a single layer or laminated. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

[0037] When the separation layer 132 has a single-layer structure, preferably, tungsten, molybdenum, tungsten A layer containing any one of a mixture of tungsten and molybdenum, tungsten oxide, tungsten oxynitride, tungsten nitride oxide, molybdenum oxide, molybdenum oxynitride, molybdenum nitride oxide, oxide of a mixture of tungsten and molybdenum, oxynitride of a mixture of tungsten and molybdenum, and nitride oxide of a mixture of tungsten and molybdenum is formed. Here, the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. When the separation layer 132 has a laminated structure, preferably, as the first layer, a layer containing tungsten, molybdenum, and a mixture of tungsten and molybdenum is formed, and as the second layer, tungsten oxide, molybdenum oxide, oxide of a mixture of tungsten and molybdenum, tungsten oxynitride, molybdenum oxynitride, and oxynitride of a mixture of tungsten and molybdenum are formed. Thus, when the separation layer 132 has a laminated structure, it is preferable to have a laminated structure of a metal film and a metal oxide film. As an example of a method for forming the metal oxide film, a method of directly forming a metal oxide film by sputtering, a method of oxidizing the surface of a metal film formed on the substrate 131 by heat treatment or plasma treatment in an oxygen atmosphere to form a metal oxide film, etc. can be mentioned. In addition to the aforementioned tungsten (W) and molybdenum (Mo), as the metal film, an element selected from titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or the above elements For example, when forming a layer containing any one of a mixture of tungsten and molybdenum, tungsten oxide, tungsten oxynitride, tungsten nitride oxide, molybdenum oxide, molybdenum oxynitride, molybdenum nitride oxide, oxide of a mixture of tungsten and molybdenum, oxynitride of a mixture of tungsten and molybdenum, and nitride oxide of a mixture of tungsten and molybdenum. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

[0038] When the separation layer 132 has a laminated structure, preferably, as the first layer, a layer containing tungsten, molybdenum, and a mixture of tungsten and molybdenum is formed, and as the second layer, tungsten oxide, molybdenum oxide, oxide of a mixture of tungsten and molybdenum, tungsten oxynitride, molybdenum oxynitride, and oxynitride of a mixture of tungsten and molybdenum are formed. In this way, when the separation layer 132 has a laminated structure, it is preferable to have a laminated structure of a metal film and a metal oxide film. As an example of a method for forming the metal oxide film, a method of directly forming a metal oxide film by sputtering, a method of oxidizing the surface of a metal film formed on the substrate 131 by heat treatment or plasma treatment in an oxygen atmosphere to form a metal oxide film, etc. can be mentioned.

[0039] In addition to the aforementioned tungsten (W) and molybdenum (Mo), as the metal film, an element selected from titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or the above elements ​​​​​​​​​​​A film made of an alloy material or a compound material mainly composed of elements can be used.

[0040] Before forming the separation layer 132, an insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, or a silicon nitride film containing oxygen may be formed on the substrate 131, and the separation layer 1 32 may be formed on the insulating film. By providing such an insulating film between the substrate 131 and the separation layer 132, it is possible to prevent impurities contained in the substrate 131 from penetrating into the upper layer. In addition, there is a step of irradiating a laser later, and during this step, it is possible to prevent the substrate 131 from being etched. Here, among the silicon oxide film containing nitrogen and the silicon nitride film containing oxygen, the former contains more oxygen than nitrogen, and the latter contains more nitrogen than oxygen, and they are used separately in this sense. It is possible to prevent impurities contained in the substrate 131 from penetrating into the upper layer. In addition, there is a step of irradiating a laser later, and during this step, it is possible to prevent the substrate 131 from being etched. Here, among the silicon oxide film containing nitrogen and the silicon nitride film containing oxygen, the former contains more oxygen than nitrogen, and the latter contains more nitrogen than oxygen, and they are used separately in this sense. Among the silicon oxide film containing nitrogen and the silicon nitride film containing oxygen, the former contains more oxygen than nitrogen, and the latter contains more nitrogen than oxygen, and they are used separately in this sense. In addition, there is a step of irradiating a laser later, and during this step, it is possible to prevent the substrate 131 from being etched.

[0041] The electrode 111 may be formed using a conductive film having translucency. The material of the conductive film having translucency can be formed and used by using a sputtering method or a vacuum evaporation method with materials such as indium oxide (In2O3) or indium tin oxide alloy (In2O3― SnO2; Indium Tin Oxide (ITO)). An indium zinc oxide alloy (In2O3 ―ZnO) may also be used. In addition, zinc oxide (ZnO) is also a suitable material, and zinc oxide (ZnO:Ga ―ZnO) added with gallium (Ga) to increase the transmittance and conductivity of visible light can also be used. When the electrode 111 is formed using such a material, the electrode 111 becomes the anode. When the electrode 111 is used as the cathode, an extremely thin film of a material having a low work function such as aluminum is used. 111 becomes the anode.

[0042] When the electrode 111 is the cathode, an extremely thin film of a material with a low work function such as aluminum is used. by using the laminated structure of such a thin film of a substance and a conductive film having the above-described translucency It can be produced.

[0043] Next, an insulating film 121 is formed covering the base film 102 and the electrode 111 (see Fig. 2(B)) Reference). For the insulating film 121, an inorganic material or an organic material can be used .

[0044] As the inorganic material, for example, any one of silicon oxide, silicon nitride, silicon oxide containing nitrogen, diamond-like carbon (Diamond Like Carbon (DLC)), or , a laminated structure of two or more can be used. As the organic material, polyimide, acryl ril, polyamide, polyimide amide, resist or benzocyclobutene, siloxane Any one of them, or a laminated structure of two or more may be used.

[0045] Siloxane is formed using a polymer material having a skeleton structure composed of a bond between silicon (Si) and oxygen (O) and having at least hydrogen in the substituent, or having at least one of fluorine, an alkyl group, or an aromatic hydrocarbon in the substituent as a starting material. Further, a fluoro group may be used as the substituent, and furthermore, an organic group containing at least hydrogen and a fluoro group may be used as the substituent. in the substituent as a starting material. Also, a fluoro group may be used as the substituent, and furthermore, an organic group containing at least hydrogen and a fluoro group may be used as the substituent. and a fluoro group may be used as the substituent, and furthermore, an organic group containing at least hydrogen and a fluoro group may be used as the substituent.

[0046] Next, using the insulating film 121, spacers 105, partition walls 104a, and partition walls 104b are formed (see Fig. 2(C)). At this time, the spacers 105 are formed in a forward taper shape, that is, the cross-sectional shape is formed into a trapezoid with the upper base shorter than the lower base. Also, the partition walls 104a and the partition walls 104b are each formed in an inverse taper shape, that is, the cross-sectional shape is formed into a trapezoid with the upper base longer than the lower base Reference). At this time, the spacer 105 is formed in a forward taper shape, that is, the cross-sectional shape is formed into a trapezoid with the upper base shorter than the lower base. Also, the partition walls 104a and the partition walls 104b are each formed in an inverse taper shape, that is, the cross-sectional shape is formed into a trapezoid with the upper base longer than the lower base​ Do it.

[0047] Furthermore, the cross-sectional shape of the spacer 105 may be a trapezoidal shape with rounded corners at the four corners so that the coverage of the later-formed light-emitting layer 112 and electrode 113 is improved.

[0048] The partition walls 104a and 104b each have a function of separating the later-formed light-emitting layer 112 and electrode 113 for each pixel.

[0049] Note that the spacer 105, the partition wall 104a, and the partition wall 104b may be formed into their respective shapes from the beginning using an insulator without forming the insulating film 121. For example, they may be formed into an inverted taper shape from the beginning by an inkjet method or the like.

[0050] Next, using any of the materials mentioned in the description of the insulating film 121, an insulating film 138 is formed to cover the base film 102, the electrode 111, the spacer 105, the partition wall 104a, and the partition wall 104b (see Fig. 3(A)). Alternatively, the insulating film 138 may be formed using a material different from that of the insulating film 121.

[0051] Using the insulating film 138, a spacer 106 is formed on the spacer 105 (see Fig. 3(B)). The spacer 106 is formed in a forward taper shape, that is, the cross-sectional shape is a trapezoid with the upper base shorter than the lower base.

[0052] Note that the spacer 106 may be formed into its shape from the beginning using an insulator without forming the insulating film 138. For example, it may be formed into a forward taper shape from the beginning by an inkjet method or the like.

[0053] The cross-sectional shape of the spacer 106 is such that the coverage of the later-formed light-emitting layer 112 and electrode 113 The four corners of the trapezoid may be shaped to have a radius of curvature so as to face upward.

[0054] By forming the spacers 105 and 106, the later-formed light-emitting layer 11 2 and the electrode 113 will be lifted along the spacers 105 and 106. That is, convex portions are formed in the light-emitting layer 112 and the electrode 113, and the convex portion of the electrode 113 is electrically connected to the conductive resin 306 that is electrically connected to the TFT 211 described later. The convex portion of the electrode 11 3 and the conductive resin 306 are connected at a position away from the electrode 113, the light-emitting layer 112, and the TFT 211, so damage to the electrode 113, the light-emitting layer 112, and the TFT 211 can be prevented. 3's convex portion and the conductive resin 306 are connected at a position away from the electrode 113, the light-emitting layer 112, and the TFT 211, so damage to the electrode 113, the light-emitting layer 112, and the TFT 211 can be prevented. Since they are connected at a position away from the electrode 113, the light-emitting layer 112, and the TFT 211, damage to the electrode 113, the light-emitting layer 112, and the TFT 211 can be prevented. It can be prevented.

[0055] Next, the light-emitting layer 112 and the electrode 113 are formed in the region on the electrode 111 surrounded by the partition walls 104a and 104b (see FIG. 4(A)). Note that an EL material layer 107a made of the same material as the light-emitting layer 112 and a conductive material layer 108a made of the same material as the electrode 113 are formed on the partition wall 104a, and an EL material layer 107b made of the same material as the light-emitting layer 112 and a conductive material layer 108b made of the same material as the electrode 113 are formed on the partition wall 104b. However, since they are electrically insulated from the electrode 111 by the partition walls 104a and 104b made of insulating films, they do not emit light. 112 and the electrode 113 are formed in the region on the electrode 111 surrounded by the partition walls 104a and 104b (see FIG. 4(A)). Note that an EL material layer 107a made of the same material as the light-emitting layer 112 and a conductive material layer 108a made of the same material as the electrode 113 are formed on the partition wall 104a, and an EL material layer 107b made of the same material as the light-emitting layer 112 and a conductive material layer 108b made of the same material as the electrode 113 are formed on the partition wall 104b. However, since they are electrically insulated from the electrode 111 by the partition walls 104a and 104b made of insulating films, they do not emit light. 12 and a conductive material layer 108a made of the same material as the electrode 113 are formed on the partition wall 104a, and an EL material layer 107b made of the same material as the light-emitting layer 112 and a conductive material layer 108b made of the same material as the electrode 113 are formed on the partition wall 104b. However, since they are electrically insulated from the electrode 111 by the partition walls 104a and 104b made of insulating films, they do not emit light. 108a, and on the partition wall 104b, an EL material layer 107b made of the same material as the light-emitting layer 112 and a conductive material layer 108b made of the same material as the electrode 113 are formed. However, since they are electrically insulated from the electrode 111 by the partition walls 104a and 104b made of insulating films, they do not emit light. 07b and a conductive material layer 108b made of the same material as the electrode 113 are formed, but since they are electrically insulated from the electrode 111 by the partition walls 104a and 104b made of insulating films, they do not emit light. Since they are electrically insulated from the electrode 111 by the partition walls 104a and 104b made of insulating films, they do not emit light. Since they are electrically insulated from the electrode 111 by the partition walls 104a and 104b made of insulating films, they do not emit light.

[0056] The light-emitting layer 112 may be a single layer, or layers for injecting, transporting, or recombining both electrons and holes, that is, carrier transport layers, carrier injection layers, etc. can be freely combined between the light-emitting layer and the electrode 111 or between the light-emitting layer and the electrode 113. layer and the electrode 113, layers for injecting, transporting, or recombining both electrons and holes, that is, carrier transport layers, carrier injection layers, etc. can be freely combined between the light-emitting layer and the electrode 111 or between the light-emitting layer and the electrode 113. layer and the electrode 113, that is, layers for injecting, transporting, or recombining both electrons and holes, such as carrier transport layers and carrier injection layers, can be freely combined. This is possible. Also, when the light-emitting layer 112 is a single light-emitting layer or has a stacked structure combined with a carrier transport layer, a carrier injection layer, etc., it shall also be collectively referred to as the light-emitting layer 112.

[0057] Hereinafter, the materials constituting the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer will be specifically described.

[0058] The hole injection layer is provided in contact with the anode, which is one of the electrodes 111 or 113, and is a layer containing a substance with high hole injection properties. Molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, etc. can be used. In addition, phthalocyanine-based compounds such as phthalocyanine (abbreviation: H2Pc) and copper phthalocyanine (CuPC), aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N-(3-methylphenyl)-N-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or polymers such as poly(ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used to form the hole injection layer.

[0059] Also, as the hole injection layer, a composite material in which an acceptor substance is contained in a substance with high hole transport properties can be used. By using a substance in which an acceptor substance is contained in a substance with high hole transport properties, the material for forming the electrode can be selected regardless of the work function of the electrode. That is, not only materials with a large work function can be used as the anode, but also materials with a small work function. The acceptor substance can be 7,7,8,8-tetracyano- 2,3,5,6-Tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, etc. In addition, transition metal oxides can be mentioned. Examples of the oxides include oxides of metals belonging to Groups 4 to 8 of the oxides of the metals ... Vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide Among them, rhenium oxide, manganese oxide, and rhenium oxide are preferred because of their high electron-accepting properties. Ribidene is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle.

[0060] As a substance having a high hole transporting property used in the composite material, an aromatic amine compound, carbazole, Derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.) Various compounds can be used. It is preferable that the organic compound has a high hole transporting property. -6 cm 2 / Vs or later However, it is preferable that the material has a higher hole mobility than that of the material having a higher hole transporting property ... electron transporting property. Other materials may be used as long as they are suitable for the composite material. Specific examples of organic compounds that can be used are listed below.

[0061] For example, the aromatic amine compound is N,N'-di(p-tolyl)-N,N'-diphenyl Phenyl-p-phenylenediamine (DTDPPA), 4,4'-bis[N-(4- Diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4 ,4'-Bis(N-{4-[N-(3-methylphenyl)-N-phenylamino]phenyl {Ru}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[N -(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3 B), etc. can be mentioned.

[0062] As the carbazole derivatives that can be used in the composite material, specifically, 3-[N- (9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarb azole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3 -yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2) , 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino] -9-phenylcarbazole (abbreviation: PCzPCN1), etc. can be mentioned.

[0063] In addition, as the carbazole derivatives that can be used in the composite material, 4,4'- di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N- carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl- 9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis 4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. can be used .

[0064] In addition, as the aromatic hydrocarbons that can be used in the composite material, for example, 2-tert -butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2- tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3, 5-Diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9 ,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,1 0-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthra cene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAn th), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA) , 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene ne, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7- tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetrameth yl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,1 0'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl yl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaf enyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, etc. can be mentioned. Also moreover, pentacene, coronene, etc. can also be used. Thus, 1×10 -6 cm 2 / Vs or more hole mobility, and it is more preferable to use aromatic hydrocarbons having 14 to 42 carbon atoms .

[0065] In addition, the aromatic hydrocarbons that can be used in the composite material may have a vinyl skeleton . As the aromatic hydrocarbon having a vinyl group, for example, 4,4'-bis(2,2- Diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2- Diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), etc. can be mentioned.

[0066] Also, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphe nylamine) (abbreviation: PVTPA), poly[N-(4-{N’-[4-(4-diphenyl amino)phenyl]phenyl-N’-phenylamino}phenyl)methacrylamide]( abbreviation: PTPDMA), poly[N,N’-bis(4-butylphenyl)-N,N’-bis( phenyl)benzidine] (abbreviation: Poly-TPD), etc. of polymer compounds can also be used.

[0067] The hole transport layer is a layer containing a substance with high hole transportability. Examples of substances with high hole transportability include , for example, 4,4’-bis[N-(1-naphthyl)-N-phenylamino]biphenyl( abbreviation: NPB), N,N’-bis(3-methylphenyl)-N,N’-diphenyl-[1 ,1’-biphenyl]-4,4’-diamine (abbreviation: TPD), 4,4’,4’’-tri s(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4’, 4’’-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4’-bis[N-(spiro-9,9’-bifluorene- 2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), etc. of aromatic amine compounds can be used. The substances described here mainly have a hole mobility of 10 cm -6 / Vs or more. However, as long as it is a substance with higher hole transportability than electrons, this 2 substance is sufficient. Note that the layer containing a substance having a high hole transporting property is not limited to a single layer. Alternatively, two or more layers made of the above-mentioned materials may be laminated.

[0068] In addition, poly(N-vinylcarbazole) (abbreviation: PVK) and poly( Polymer compounds such as 4-vinyltriphenylamine (PVTPA) can also be used. can.

[0069] The light-emitting layer is a layer containing a light-emitting substance. There are two types of light-emitting layer: Even in the case of a so-called single-film light-emitting layer in which the light-emitting center material is dispersed in the host material, The light-emitting layer may be of any host-guest type.

[0070] There is no limitation on the luminescence center material to be used, and any known fluorescent or phosphorescent material may be used. As a fluorescent material, for example, N,N'-bis[4-(9H-carbazolyl) N,N'-diphenylstilbene-4,4'-diamine (abbreviation Name: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl- 9-Anthryl)triphenylamine (abbreviation: YGAPA), etc., and nm or more 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2 -Anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N -[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-a PCAPA, Perylene, 2,5,8,11-Tetra-tert-butylperylene Rylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl Nil-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N ,N’’-(2-tert-butylanthracene-9,10-diyl-di-4,1-phenylene rene)bis[N,N’,N’-triphenyl-1,4-phenylenediamine] (abbreviation: D PABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4 -(9,10-diphenyl-2-anthryl)phenyl]-N,N’,N’-triphenyl -1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N’,N’,N’ ’,N’’,N’’’,N’’’-octaphenyldibenz[g,p]chrysene-2,7 ,10,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,10-dip henyl-2-anthryl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1’-biphenyl-2-yl)-2- anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCA BPhA), N-(9,10-diphenyl-2-anthryl)-N,N’,N’-trip henyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis( 1,1’-biphenyl-2-yl)-2-anthryl]-N,N’,N’-triphenyl -1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1’ -biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]- N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-tri phenylanthracene-9-amine (abbreviation: DPhAPhA) coumarin 545T, N,N ’-Diphenylquinacridone, (abbreviation: DPQd), rubrene, 5,12-bis(1,1 ’-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2- (2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyr an-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6- 2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2) , N,N,N’,N’-tetrakis(4-methylphenyl)tetracene-5,11-dia mine (abbreviation: p-mPhTD), 7,13-diphenyl-N,N,N’,N’-tetrak is(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diam ine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7 -tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolidi ne-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl -2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl )ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB) , 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-py ran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis [2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro -1H,5H-benzo[ij]quinolin-9-yl)ethenyl]-4H-pyran-4 Examples include { }propandinitrile (abbreviation: BisDCJTM), etc. Phosphorescent As the phosphorescent material, for example, bis[2-(4’,6’-difluorophenyl)pyridinato- N,C 2’ iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FI r6), and in addition, bis[2-(4’,6 ’-difluorophenyl)pyridinato-N,C 2’ iridium(III) picolinate (abbreviation: FIrpic), bis[2-(3’,5’-bis(trifluoromethyl)phenyl) pyridinato-N,C 2’ iridium(III) picolinate (abbreviation: Ir(CF3pp y)2(pic)), bis[2-(4’,6’-difluorophenyl)pyridinato-N, C 2’ iridium(III) acetylacetonate (abbreviation: FIracac), emission wavelength of 500 nm (green emission) or more, tris(2-phenylpyridinato)iridium(II I) (abbreviation: Ir(ppy)3), bis(2-phenylpyridinato)iridium(III ) acetylacetonate (abbreviation: Ir(ppy)2(acac)), tris(acetylaceta tonato)(monophenanthroline)terbium(III) (abbreviation: Tb(acac)3 (Phen)), bis(benzo[h]quinolinato)iridium(III) acetylacet nato (abbreviation: Ir(bzq)2(acac)), bis(2,4-diphenyl-1,3- oxazolato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: Ir( dpo)2(acac)), bis[2-(4’-perfluorophenylphenyl)pyrid Sodium iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph)2( acac)), bis(2-phenylbenzothiazolato-N,C 2’ ) iridium(III ) acetylacetonate (abbreviation: Ir(bt)2(acac)), bis[2-(2’-be nzothieno[4,5-α]thienyl)pyridinato-N,C 3’ iridium(III) acetyl acetonate (abbreviation: Ir(btp)2(acac)), bis(1-phenylisoquinoli nato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: Ir(piq) 2(acac)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl ) quinoxalinato]iridium(III) (abbreviation: Ir(Fdpq)2(acac)), (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(II I) (abbreviation: Ir(tppr)2(acac)), 2,3,7,8,12,13,17, 18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) , tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline) europium(III) (abbreviation: Eu(DBM)3(Phen)), tris[1-(2- tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europi um(III) (abbreviation: Eu(TTA)3(Phen)), etc. can be mentioned. From the above materials or other known materials, if selected considering the emission color in each light-emitting element, it is good.

[0071] When using a host material, for example, tris(8-quinolinolato)aluminum(III )(Abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (Abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium II) (Abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylph enolato)aluminum(III) (Abbreviation: BAlq), bis(8-quinolinolato)zinc (II) (Abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc II) (Abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc II) (Abbreviation: ZnBTZ) and other metal complexes, 2-(4-biphenylyl)-5-(4-t ert-butylphenyl)-1,3,4-oxadiazole (Abbreviation: PBD), 1,3- bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (Abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-( 4-tert-butylphenyl)-1,2,4-triazole (Abbreviation: TAZ), 2,2 ’,2’’-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (Abbreviation: TPBI), bathophenanthroline (Abbreviation: BPhen), bathoqu uproin (Abbreviation: BCP), 9-[4-(5-phenyl-1,3,4-oxadiazol -2-yl)phenyl]-9H-carbazole (Abbreviation: CO11) and other heterocyclic compounds 、NPB (or α-NPD), TPD, BSPB and other aromatic amine compounds are included . Also, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives 、condensed polycyclic aromatic compounds such as dibenzo[g,p]chrysene derivatives are included. Specifically 、9,10-diphenylanthracene (Abbreviation: DPAnth), N,N-diphenyl-9 、10-phenylphenanthrene (Abbreviation: DPPhen), etc. are included -[4-(10-Phenyl-9-anthryl)phenyl]-9H-carbazole-3- amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenyl amine (abbreviation: DPhPA), 4-(9H-carbazol-9-yl)-4'-(10-p henyl-9-anthryl)triphenylamine (abbreviation: YGAPA), N,9-diphenyl -N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole- 3-amine (abbreviation: PCAPA), N,9-diphenyl-N-{4-[4-(10-p henyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviation : PCAPBA), N,9-diphenyl-N-(9,10-diphenyl-2-anthryl )-9H-carbazole-3-amine (abbreviation: 2PCAPA), 6,12-dimethoxy- 5,11-diphenylchrysene, N,N,N',N',N'',N'',N''',N' ''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H -carbazole (abbreviation: CzPA), 3,6-diphenyl-9-[4-(10-phenyl -9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 9,10 -bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di (2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di (2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-bianthryl (abbre iation: BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation :DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 3,3',3''-(benzene-1,3,5-triyl)tripyrene (abbreviation: TPB3), etc. can be mentioned. From these and known substances, each has an energy gap greater than the energy gap (triplet energy in the case of phosphorescence emission) of the luminescent center substance to be dispersed and has a substance with an energy gap (triplet energy) and selects a substance that exhibits a transport property matching the transport property that each layer should have.

[0072] The electron transport layer is a layer containing a substance with high electron transport properties. For example, tris(8-quinolinolato)aluminum (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation: BAlq), etc., and is a layer composed of metal complexes having a quinoline skeleton or a benzoquinoline skeleton . In addition, other metal complexes having an oxazole-based , a metal complex having a thiazole-based ligand such as bis[2-(2-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX)2), bis[2-(2-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ)2) can also be used. Furthermore, in addition to metal complexes, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3, 4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7) , 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)- 1,2,4-triazole (abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen ), bathocuproine (abbreviation: BCP), etc. can also be used. The substances described here are , mainly substances having an electron mobility of 10 -6 cm 2 / Vs or more. Note that as long as the substance has a higher electron transport property than holes, substances other than the above can be used as the electron transport layer.

[0073] In addition, the electron transport layer may be not only a single layer but also a layer in which two or more layers made of the above substances are stacked.

[0074] Also, a layer for controlling the movement of electron carriers may be provided between the electron transport layer and the light-emitting layer. This is a layer in which a small amount of a substance with a high electron trapping property is added to a material with a high electron transport property as described above, and by suppressing the movement of electron carriers, it becomes possible to adjust the carrier balance. Such a configuration has a great effect on suppressing problems (for example, a decrease in device lifetime) caused by electrons passing through the light-emitting layer.

[0075] In addition, an electron injection layer may be provided in contact with the cathode, which is the other of electrode 111 or electrode 113. As the electron injection layer, alkali metals or alkaline earth metals or their compounds such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. can be used. For example, those containing an alkali metal or an alkaline earth metal or their compounds in a layer made of a substance having electron transport properties, for example, those containing magnesium (Mg) in Alq etc. can be used. Note that the electron injection layer As a result, by using a layer containing an alkali metal or an alkaline earth metal in a layer made of a substance having electron transporting properties, electron injection from the cathode can be efficiently performed, which is more preferable.

[0076] When using the electrode 113 as a cathode, a metal, alloy, electrically conductive compound, or a mixture thereof having a small work function (specifically, less than 3.8 eV) can be used. Specific examples of such cathode materials include elements belonging to Group 1 or Group 2 of the periodic table, i.e., alkali metals such as lithium (Li) and cesium (Cs), and alkaline earth metals such as magnesium ( Mg), calcium (Ca), and strontium (Sr), and alloys containing these (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb ), and alloys containing these. However, by providing an electron injection layer between the cathode and the electron transport layer, various conductive materials regardless of the work function, such as Al, Ag, ITO, indium tin oxide containing silicon or silicon oxide, etc., can be used as the cathode. These conductive materials can be formed into a film by using a sputtering method, an inkjet method, a spin coating method, etc.

[0077] When using the electrode 113 as an anode, it is preferable to use a metal, alloy, conductive compound, or a mixture thereof having a large work function (specifically, 4.0 eV or more). Specifically, for example, indium tin oxide (ITO: Indium Tin Oxide), indium tin oxide containing silicon or silicon oxide, indium oxide Indium-zinc oxide (IZO: Indium Zinc Oxide), indium oxide containing tungsten oxide and zinc oxide, etc. can be mentioned. These conductive metal oxide films are usually formed by sputtering, but may also be produced by applying the sol-gel method or the like. For example, indium-zinc oxide (IZO) can be formed by sputtering using a target containing 1 to 20 wt % of zinc oxide with respect to indium oxide. In addition, indium oxide containing tungsten oxide and zinc oxide can be formed by sputtering using a target containing 0.5 to 5 wt% of tungsten oxide and 0.1 to 1 wt% of zinc oxide with respect to indium oxide. Furthermore, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo ), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metal materials (for example, titanium nitride) etc. can be mentioned. Also, by providing the above-mentioned composite material in contact with the anode, the material of the electrode can be selected regardless of the work function. Next, as shown in FIG. 4(B), a laser beam 134, for example, a UV laser beam, is irradiated

[0078] to form an opening 135 in the separation layer 132 and the base film 102 as shown in FIG. 5(A). Before irradiating the laser beam 134, a resin for separation may be provided to cover the laminate formed on the substrate 131. By forming the opening 135, the separation layer 132 is partially removed, which triggers the separation from the substrate 131 of the base film 102, the electrode 111, the spacers 105, 106,

[0079] and the like. From the substrate 131, the base film 102, the electrode 111, the spacers 105, 106, A stacked structure 137 including a partition 104a, a partition 104b, a light-emitting layer 112, and an electrode 113 can be easily separated. This separation is performed at the boundary inside the separation layer 132 or between the separation layer 13 2 and the base film 102.

[0080] In this embodiment, a UV laser beam is used as the laser beam 134, but the type of the laser beam 134 is not particularly limited as long as it can form the opening 135.

[0081] The laser oscillator that oscillates the laser beam 134 is composed of a laser medium, an excitation source, and a resonator. Lasers can be classified by the medium into gas lasers, liquid lasers, and solid lasers and can be classified by the characteristics of oscillation into free electron lasers, semiconductor lasers, and X-ray lasers. In this embodiment, any laser can be used. Preferably, a gas laser or a solid laser is used, and more preferably, a solid laser is used.

[0082] Gas lasers include helium-neon lasers, carbon dioxide lasers, excimer lasers, and argon ion lasers. Excimer lasers include rare gas excimer lasers and rare gas halide excimer lasers. Rare gas excimer lasers oscillate with three types of excited molecules of argon, krypton, and xenon. Argon ion lasers include rare gas ion lasers and metal vapor ion lasers.

[0083] Liquid lasers include inorganic liquid lasers, organic chelate lasers, and dye lasers. Inorganic liquid lasers and organic chelate lasers use rare earth ions such as neodymium used in solid lasers as the laser medium.

[0084] The laser medium used in a solid-state laser is a solid host doped with an active species that exhibits laser action. The solid host is either a crystal or a glass. Crystals include YAG (yttrium aluminum garnet crystal), YLF, YVO4, YAlO3, sapphire, ruby, and alexandrite. The active species that exhibits laser action is, for example, trivalent ions (Cr3+, Nd3+, Yb3+, Tm3+, Ho3+, Er3+, Ti3+). )

[0085] When using ceramic (polycrystalline) as the medium, it is possible to form the medium into a free shape in a short time and at low cost. When using a single crystal as the medium, usually, a cylindrical one with a diameter of several millimeters and a length of several tens of millimeters is used. However, when using ceramic (polycrystalline) as the medium, it is possible to make a larger one. Also, the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission can't be significantly changed whether in a single crystal or a polycrystal. Therefore, there is a certain limit to improving the laser output by increasing the concentration. However, when using ceramic as the medium, the size of the medium can be significantly increased compared to a single crystal, resulting in a significant improvement in output. Furthermore, when using ceramic as the medium, it is possible to easily form a medium in the shape of a parallelepiped or a rectangular cuboid. When using a medium of such a shape and making the oscillating light travel zigzag inside the medium, the oscillating optical path can be lengthened. As a result, the amplification becomes larger, enabling oscillation at a high output. Also, the laser beam emitted from a medium of such a shape has a rectangular cross-sectional shape at the time of emission, which is advantageous for shaping it into a linear beam compared to a round beam. By shaping the laser beam emitted in this way using an optical system, a linear beam with a short side length of 1 mm or less and a long side length of several millimeters to several meters can be easily obtained. Also, by uniformly irradiating the excitation light onto the medium, the linear beam will have a uniform energy distribution in the long side direction. By irradiating this linear beam onto the semiconductor film, it becomes possible to anneal the entire surface of the semiconductor film more uniformly. If uniform annealing up to both ends of the linear beam is necessary, devices such as placing slits at both ends and blocking the energy attenuation part are required. Note that as the laser beam 134 used in this embodiment, a continuous wave (CW) laser beam or a pulsed laser beam can be used. The irradiation conditions of the laser beam 134, for example, frequency, power density, energy density, beam profile, etc., are appropriately controlled in consideration of the thickness and material of the base film 102 and the separation layer 132.

[0086] Next, the laminated structure 137 including the base film 102, the electrode 111, the spacer 105, the spacer 106, the partition wall 104a, the partition wall 104b, the light emitting layer 112, and the electrode 113 is separated from the substrate 131 (see Fig. 5(B)). Also, an insulating film 142 and an adhesive layer 143 are formed on the substrate 141 (see Fig. 6(A)). However, the insulating film 142 may be formed as needed, and it does not have to be formed if not necessary.

[0087] The substrate 141 is a flexible substrate and has light transmissivity. As such a substrate, a plastic substrate with light transmissivity can be used, for example, polyethylene

[0088]

[0089] lene, etc. Polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resin, polymethyl methacrylate resin, polycarbonate resin (PC), polyethersulfone resin (PES), polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin, etc. can be preferably used. Also, the insulating film 142 may be made of any of the materials mentioned in the description of the base film 102. The adhesive layer 143 can use various curable adhesives such as reaction-curable, thermosetting, and ultraviolet-curable adhesives, anaerobic adhesives, etc. The materials of these adhesives include epoxy resin,

[0090] acrylic resin, silicone resin, phenolic resin, etc.

[0091] Next, the base film 102 in the laminated structure 137 and the adhesive layer 143 on the substrate 141 are opposed to each other and bonded together (see Fig. 6(B)). In this way, the light-emitting element 145 is fabricated on the flexible substrate (see Fig. 6(C)).

[0092]

[0093]

[0094] )

[0094] Also, the semiconductor circuit for driving the light-emitting element and its manufacturing method will be described with reference to Figs. 7(A) to 7( D), Figs. 8(A) to 8(C), Figs. 9(A) to 9(C), Figs. 10(A) to 10(B) , Fig. 11, Fig. 12, Figs. 14(A) to 14(B), Fig. 15, Fig. 16, Figs. 17(A) to 1 7(B), Figs. 18(A) to 18(B), Fig. 19, Fig. 20, Fig. 21, Figs. 23(A) to 23 (B).

[0095] First, a separation layer 222 and a base film 204 are formed on a substrate 221 (see FIG. 7(A)). The substrate 221, the separation layer 222, and the undercoat film 204 are the substrate 131, the separation layer 132, and the undercoat film 204, respectively. Any of the materials mentioned in the description of membrane 102 may be used.

[0096] Next, an island-shaped semiconductor film 231 is formed on the base film 204. A gate insulating film 205 is disposed on the island-shaped semiconductor film 231. Then, a contact electrode 236 is formed (see FIG. 7(B)).

[0097] The island-shaped semiconductor film 231 is formed of a material such as silicon (Si) or germanium (Ge). Amorphous semiconductors are produced by vapor deposition or sputtering using a gas containing the semiconductor material. (Amorphous) semiconductors, the amorphous semiconductors are crystallized using light energy or thermal energy. Polycrystalline semiconductors or microcrystalline (semi-amorphous or microcrystalline) Semiconductors that are mainly composed of organic materials, etc. can be used. The semiconductor film 231 is formed by sputtering, LPCVD, plasma CVD, or the like. After the film is formed, it may be etched to form an island shape. In this embodiment, the island-shaped semiconductor film 23 As No. 1, an island-shaped silicon film is formed.

[0098] The island-shaped semiconductor film 231 may be made of silicon (Si), germanium (Ge), or the like. In addition to the elements, compounds such as GaAs, InP, SiC, ZnSe, GaN, and SiGe are also used. Compound semiconductors can also be used. SnO2, magnesium zinc oxide, gallium oxide, indium oxide, and the above oxides For example, an oxide semiconductor composed of a plurality of oxide semiconductors can be used. An oxide semiconductor composed of zinc, indium oxide, and gallium oxide may also be used. When zinc oxide is used for the island-like semiconductor film 231, the gate insulating film 205 is preferably made of Y. 2O3, Al2O3, TiO2, or a laminate of these materials may be used. The electrodes 215a and 215b described later may be made of ITO, Au, Ti, or the like. In, Ga, etc. can also be added to ZnO.

[0099] The gate electrode 236 is formed by depositing Ag, Au, C, etc., using a CVD method, a sputtering method, a droplet discharge method, etc. u, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, An element selected from Si, Ge, Zr, Ba, or an alloy material whose main component is an element It may be made of a compound material. It may also be made of polycrystalline silicon doped with impurity elements such as phosphorus. Alternatively, a semiconductor film such as a silicon film or an AgPdCu alloy may be used. A structure in which several layers are laminated may also be used.

[0100] In addition, in the island-like semiconductor film 231, a channel forming region 233, a source region or a drain region A region 234a is one of the source and drain regions, and a region 234b is the other of the source and drain regions. (See FIG. 7C). The region 234a and the region 234b are formed in the island-shaped semiconductor film 231. By doping an impurity element having one conductivity type into the gate electrode 236 as a mask, The impurity element having one conductivity type is an impurity element that imparts n-type conductivity. For example, phosphorus (P) or arsenic (As) can be used, and boron can be used as an impurity element to give the p-type. (B) should be used.

[0101] Also, low-concentration impurity regions may be formed between the channel formation region 233 and the region 234a, and between the channel formation region 233 and the region 234b, respectively. Next, an insulating film 206 and an insulating film 207 are formed to cover the gate insulating film 205 and the gate electrode 236. Further, on the insulating film 207, an electrode 215a electrically connected to the region 234a and an electrode 215b electrically connected to the region 234b are formed. In the above-described manner, the TFT 211 included in the semiconductor circuit is manufactured (see Fig. 7(D)). Although only one TFT is shown in Fig. 7(D), the number of TFTs may be two or more. A semiconductor circuit may be formed by electrically connecting a plurality of TFTs.

[0102] The insulating film 206 and the insulating film 207 may be formed using any of the materials described in the explanation of the base film 204. In this embodiment, a silicon nitride film containing oxygen is formed as the insulating film 206, and a silicon oxide film containing nitrogen is formed as the insulating film 207. This is done to terminate the dangling bonds of the island semiconductor film 231 by hydrogen contained in the silicon nitride film containing oxygen by heat treatment. Also, either one of the insulating film 206 and the insulating film 207 may be formed as necessary. The electrode 215a and the electrode 215b may be formed using any of the materials described in the explanation of the gate electrode 236. Next, an insulating film 208 is formed to cover the insulating film 207, the electrode 215a, and the electrode 215b.

[0103]

[0104]

[0105] ​​​​​​​​​​​​An electrode 217 that is electrically connected to either the electrode 215a or the electrode 215b is formed on the insulating film 208 (see Fig. 8(A)). (See Fig. 8(A)).

[0106] The insulating film 208 may be formed using an organic insulating material or an inorganic insulating material.

[0107] As the inorganic material, for example, any one of silicon oxide, silicon nitride, silicon oxide containing nitrogen, diamond-like carbon (Diamond Like Carbon (DLC)), or a laminated structure of two or more thereof can be used. As the organic material, any one of polyimide, acryl ril, polyamide, polyimide amide, resist, or benzocyclobutene, siloxane can be used, or a laminated structure of two or more thereof may be used.

[0108] The electrode 217 may be formed using any of the materials mentioned in the description of the gate electrode 236. (See Fig. 8(A)).

[0109] A structure 305 in which the sheet-like fibrous body 302 is impregnated with the organic resin 301 is provided on the insulating film 208 and the electrode 217 (see Fig. 8(B)). Such a structure 305 is also called a prepreg. Specifically, the prepreg is a composition in which a matrix resin is diluted with an organic solvent and impregnated into a sheet-like fibrous body, and then dried to volatilize the organic solvent and semi-cure the matrix resin. (See Fig. 8(B)). Such a structure 305 is also called a prepreg. The prepreg is specifically a composition in which a matrix resin is diluted with an organic solvent and impregnated into a sheet-like fibrous body, and then dried to volatilize the organic solvent and semi-cure the matrix resin. After impregnating a composition in which a matrix resin is diluted with an organic solvent into a sheet-like fibrous body, it is dried to volatilize the organic solvent and semi-cure the matrix resin. It is a semi-cured matrix resin after drying to volatilize the organic solvent.

[0110] In the drawings of this specification, the sheet-like fibrous body 302 is shown as a plain woven fabric made of a yarn bundle having an elliptical cross-section. Also, although the TFT 211 is larger than the yarn bundle of the sheet-like fibrous body 302, there are cases where the size of the TFT 211 is smaller than the yarn bundle of the sheet-like fibrous body 302. In the drawings of this specification, the sheet-like fibrous body 302 is shown as a plain woven fabric made of a yarn bundle having an elliptical cross-section. Also, although the TFT 211 is larger than the yarn bundle of the sheet-like fibrous body 302, there are cases where the size of the TFT 211 is smaller than the yarn bundle of the sheet-like fibrous body 302. .

[0111] Here, regarding the structure (also referred to as "prepreg") 305 having the sheet-like fibrous body 302 and the organic resin 301, it will be described in detail with reference to FIGS. 14(A) to 14(B), FIGS. 15, 16, 17(A) to 17(B).

[0112] FIG. 14(A) and FIG. 14(B) show a top view of a woven fabric in which the sheet-like fibrous body 302 is woven using a yarn bundle as warp and weft, and FIG. 17(A) shows a cross-sectional view thereof. Further, FIG. 17(B) shows a cross-sectional view of the structure 305 in which the sheet-like fibrous body 302 is impregnated with the organic resin 301.

[0113] The sheet-like fibrous body 302 is a woven fabric or a non-woven fabric of an organic compound or an inorganic compound. Also, as the sheet-like fibrous body 302, high-strength fibers of an organic compound or an inorganic compound may be used.

[0114] Also, the sheet-like fibrous body 302 may be a woven fabric woven using a bundle of fibers (single filaments, hereinafter referred to as a yarn bundle) as warp and weft, or a non-woven fabric formed by randomly or unidirectionally depositing yarn bundles of a plurality of types of fibers. In the case of a woven fabric, plain weave, twill weave, satin weave, etc. may be appropriately used.

[0115] The cross-section of the yarn bundle may be circular or elliptical. As the yarn bundle, a yarn bundle subjected to fiber opening processing by high-pressure water flow, high-frequency vibration using a liquid as a medium, continuous ultrasonic vibration, pressing by a roll, etc. may be used. The yarn bundle subjected to fiber opening processing has a wider yarn bundle width and can reduce the number of single filaments in the thickness direction, and the cross-section of the yarn bundle becomes elliptical or flat plate-shaped. Also, by using a low-twist yarn as the yarn bundle, the yarn bundle is easily flattened, and the cross-sectional shape of the yarn bundle becomes elliptical or flat plate-shaped. ​​​​​​​​​​Thus, by using a yarn bundle having an elliptical or flat plate-shaped cross section, the thickness of the sheet-like fibrous body 302 can be reduced. Therefore, the thickness of the structure 305 can be reduced, and a thin semiconductor device can be manufactured.

[0116] As shown in FIG. 14(A), in the sheet-like fibrous body 302, warp threads 302a are woven at regular intervals and weft threads 302b are woven at regular intervals. Such a fibrous body has regions (referred to as basket holes 302c) where the warp threads 302 a and the weft threads 302b do not exist. In such a sheet-like fibrous body 302, the proportion of the organic resin 301 impregnated into the fibrous body increases, and the adhesion of the sheet-like fibrous body 302 can be enhanced. Note that in the basket holes 302c in the structure 305, the warp threads 302a and the weft threads 302b do not exist, but the basket holes 302c are filled with the organic resin 301.

[0117] Further, as shown in FIG. 14(B), the sheet-like fibrous body 302 may have a high density of the warp threads 302a and the weft threads 302b and a low proportion of the basket holes 302c. Typically, it is preferable that the size of the basket holes 302c is smaller than the area locally pressed. Typically, it is preferable that the basket holes 302c are rectangles with one side being 0.01 mm or more and 0.2 mm or less. When the area of the basket holes 302c of the sheet-like fibrous body 302 is thus small, even if pressed by a thin member at the tip (typically, writing utensils such as pens and pencils), the pressure can be absorbed by the entire sheet-like fibrous body 302.

[0118] In addition, in order to increase the penetration rate of the organic resin 301 into the yarn bundle, the yarn bundle is surface-treated. is also acceptable. For example, corona discharge treatment, plasma discharge treatment, etc. for activating the surface of the fiber bundle are available. In addition, there is surface treatment using a silane coupling material or a titanate coupling material .

[0119] Moreover, high-strength fibers are specifically fibers with a high tensile elastic modulus. Or, fibers with a high Young's modulus . Representative examples of high-strength fibers include polyvinyl alcohol-based fibers, polyester -based fibers, polyamide-based fibers, polyethylene-based fibers, aramid-based fibers, polyparaphenylene benzobisoxazole fibers, glass fibers, or carbon fibers. As glass fibers , glass fibers using E-glass, S-glass, D-glass, Q-glass, etc. can be used . Note that the sheet-like fiber body 302 may be formed of one type of the above high-strength fibers. Also , it may be formed of a plurality of types of the above high-strength fibers.

[0120] The organic resin 301 impregnated in the sheet-like fiber body 302 can be an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide triazine resin, or a cyanate resin, etc. of thermosetting resins can be used. Also, thermoplastic resins such as polyphenylene oxide resin, polyether imide resin, or fluororesin can be used. Also, a plurality of the above thermoplastic resins and the above thermosetting resins may be used. By using the above organic resin, it is possible to fix the sheet-like fiber body to the semiconductor element layer by heat treatment. Note that the higher the glass transition temperature of the organic resin 301, the more difficult it is to break under local pressing, which is preferable. 301 is preferably such that the higher the glass transition temperature, the more difficult it is to break under local pressing.

[0121] A high thermal conductivity filler may be dispersed in the organic resin 301 or within the fiber bundle of the fiber. High thermal Examples of conductive fillers include aluminum nitride, boron nitride, silicon nitride, alumina, etc. In addition, examples of high thermal conductivity fillers include metal particles such as silver and copper. When the high thermal conductivity filler is contained in the organic resin or the fiber bundle, it becomes easier to release the heat generated in the element layer to the outside, so that it is possible to suppress the heat accumulation of the semiconductor device and reduce the destruction of the semiconductor device. This can be achieved.

[0122] In FIGS. 14(A) and 14(B), a sheet-like fibrous body formed by weaving one warp thread and one weft thread each is shown, but the number of warp threads and weft threads is not limited to this. The number of warp threads and weft threads may be determined as needed. For example, FIG. 15 shows a top view of a sheet-like fibrous body formed by weaving, as one bundle, a bundle of 10 warp threads and 10 weft threads each, and FIG. 16 shows a cross-sectional view. In FIG. 15, the sheet-like fibrous body 302 is impregnated with the organic resin 301 to form the structure 305. 301 and forms the structure 305. 301 and forms the structure 305.

[0123] Next, a conductive resin 306 is disposed on the structure 305 and on the electrode 217 (see FIG. 8( C)). In this embodiment, a conductive paste containing a metal element, for example, a silver paste, is used as the conductive resin 306. The metal element may be contained in the conductive paste as metal particles. That's fine.

[0124] The conductive paste is preferably a paste containing any one of copper (Cu), silver (Ag), nickel (Ni), gold ( Au), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo), titanium (Ti).

[0125] The method of disposing the conductive resin 306 on the structure 305 includes screen printing and inkjet The Toray method may be used.

[0126] When the conductive resin 306 is disposed on the structure 305, the organic resin 301 in the structure 305 and the components of the conductive resin 306, for example, when using a conductive paste, the paste reacts, and a part of the organic resin 301 dissolves, and the metal particles in each of the conductive resins 306 pass through the gaps of the sheet-like fiber body 302 and move to the surface (the second surface) opposite to the surface (the first surface) where the conductive resin 306 was first formed. As a result, a through electrode is formed inside the structure 305 (see Fig. 9(A)).

[0127] Note that the area of the conductive resin 306 on the second surface of the structure 305 may be smaller or larger than the area on the first surface. That is, the movement of the conductive resin 306 into the structure 305 may be a movement while converging or a movement while spreading.

[0128] By not forming a through hole (also referred to as a contact hole) in the structure 305, that is, by not cutting the sheet-like fiber body 302, it is possible to electrically connect one surface and the other surface of the structure 305 while maintaining the strength of the structure 305.

[0129] Thereafter, a heating process and a pressure bonding process are performed to cure the organic resin 301 that did not melt in the structure 305.

[0130] Here, the laminated structure from the substrate 221 to the structure 305, as well as the laminated structure of the conductive resin 306 will be referred to as the laminated structure 237.

[0131] Next, as shown in Fig. 9(B), in order to easily perform the subsequent separation process, from the structure 305 side Irradiate the laminated structure from the separation layer 222 to the structure 305 with a laser beam 225, As shown in FIG. 9(C), a groove 227 may be formed in the laminated structure of the separation layer 222, the base film 204, the gate insulating film 205, the insulating film 2 06, the insulating film 207, the insulating film 208, and the structure 305. The laser beam 225 may be any of those described in the description of the laser beam 134.

[0132] Next, using the groove 227 as a trigger, at the interface between the separation layer 222 and the base film 204, the substrate 221 on which the separation layer 222 is formed and the laminated structure 232 having the base film 204, the gate insulating film 205, the insulating film 206 , the insulating film 207, the insulating film 208, the structure 305, and the TFT 211 are separated by physical means (see FIG. 10(A)).

[0133] The physical means refers to mechanical means or mechanical means, and refers to means for applying some mechanical energy (mechanical energy), and the means typically applies a mechanical force (for example, a process of peeling off with a human hand or a gripping jig, or a process of separating while rotating a roller). At this time, providing a pressure-sensitive adhesive sheet that can be peeled off by light or heat on the surface of the structure 305 makes the separation easier.

[0134] Alternatively, a liquid may be dropped into the groove 227, and the liquid may be infiltrated into the interface between the separation layer 222 and the base film 204 to peel the laminated structure 232 from the separation layer 222. In this case, the liquid may be dropped only into the groove 227, or the entire laminated structure formed on the substrate 221 may be immersed in the liquid , and the liquid may be infiltrated into the interface between the separation layer 222 and the base film 204 from the groove 227.

[0135] Also, in FIG. 9(C), a fluorinated gas such as NF3, BrF3, or ClF3 is introduced into the groove 227, and the separation layer 222 is etched and removed with the fluorinated gas to separate the laminated structure 232 from the substrate 221. A method can be used. Next, a substrate 201 on which an insulating film 202 and an adhesive layer 203 are formed is prepared. Then, the underlying film 204 in the laminated structure 232 and the adhesive layer 203 on the substrate 201 are opposed to each other and bonded together. The substrate 201, the insulating film 202, and the adhesive layer 203 may each use the materials described in the description of the substrate 141, the insulating film 142, and the adhesive layer 143. In this way, the semiconductor circuit element 235 is manufactured (see FIG. 10(B)).

[0136] Next, the light-emitting element 145 and the semiconductor circuit element 235 are opposed to each other (see FIG. 1). At this time, they are opposed so that the convex portion of the electrode 113 and the conductive resin 306 overlap. The case where the convex portion of the electrode 113 and the conductive resin 306 are directly bonded is shown in FIG. 11. Before direct bonding, it is preferable to perform plasma treatment on the surfaces of the light-emitting element 145 and the semiconductor circuit element 235 respectively. Also, by energizing the electrode 113 and the conductive resin 306, the bonding becomes stronger. Also, a space 241 is formed surrounded by the electrode 113, the partition wall 104a, and the structure 305. When a desiccant 242 is disposed in the space 241, it is possible to prevent moisture from entering the light-emitting layer 112. Furthermore, since the space 241 exists, stress can be relaxed even when the substrate 141 and the substrate 201 are bent. (See FIG. 10(B)).

[0137]

[0138]

[0138]

[0139]

[0140]

[0140]

[0141] Further, an example in which the light-emitting element 145 and the semiconductor circuit element 235 are bonded together with an anisotropic conductive resin film 331 is shown in FIG. 12. Examples of the anisotropic conductive resin film 331 include ACP (Anisotropic Conductive Paste) and ACF (Anisotropic Conductive Film). By bonding the light-emitting element 145 and the semiconductor circuit element 235 using the anisotropic conductive resin film 331, the convex portion of the electrode 113 and the conductive resin 306 are electrically connected via the conductive particles 332 contained in the anisotropic conductive resin film 331. Since the anisotropic conductive resin film 331 conducts only in the longitudinal direction, conduction occurs only between the convex portion of the electrode 113 and the conductive resin 306. Also, the light-emitting element 145 and the semiconductor circuit element 235 may be bonded together with a non-conductive paste (Non Conductive Paste: NCP). The semiconductor circuit element having a configuration different from that of FIG. 10(B), its manufacturing method, and the light-emitting device and its manufacturing method will be described with reference to FIGS. 18(A) to 18(B), FIG. 19, FIG. 20, and FIG. 21. First, based on the manufacturing process up to FIG. 8(B), a structure 305 having a separation layer 222, an underlayer film 204, a gate insulating film 205, an insulating film 206, an insulating film 207, an insulating film 208, a TFT 261 having electrodes 262 and 263, a sheet-like fibrous body 302, and an organic resin 301 is formed on the substrate 221. At this time, the TFT 261 may be formed in the same manner as the TFT 211, but the electrode 262 is formed in place of the electrode 215a, and the electrode 263 is formed in place of the electrode 215b. The gate insulating film 205, the insulating film

[0142]

[0143]

[0144]

[0145] ​​​​​​​​​​​​​ Form contact holes reaching the region 234b and the isolation layer 222 in the edge film 206, the insulating film 207, and the insulating film 208, and form one of the electrodes 262 and 263, which is the electrode 26 3 in the present embodiment, so as to be in contact with the region 234b and the isolation layer 222.

[0146] Next, based on the manufacturing processes shown in FIGS. 9(B) and 9(C), form a groove 227 in the laminated structure of the gate insulating film 205, the insulating film 206, the insulating film 207, the insulating film 208, and the structure 305 (see FIG. 18(A)). (See FIG. 18(A)).

[0147] Next, using the groove 227 as a trigger, separate the substrate 221 on which the isolation layer 222 is formed from the semiconductor circuit element 245 having the underlayer film 204, the gate insulating film 205, the insulating film 206, the insulating film 207, the insulating film 208, the structure 305, and the TFT 261 at the interface between the isolation layer 222 and the underlayer film 204 (see FIG. 18(B)). As a result, the electrode 263 is exposed on the surface of the underlayer film 204.

[0148] Next, oppose the underlayer film 204 in the semiconductor circuit element 245 to the electrode 113 in the light-emitting element (see FIG. 19). At this time, arrange them so that the convex portion of the electrode 113 overlaps with the electrode 263 exposed on the underlayer film 204.

[0149] FIG. 20 shows the case where the convex portion of the electrode 113 and the electrode 263 are directly joined. Before direct joining, it is preferable to perform plasma treatment on the surfaces of the light-emitting element 145 and the semiconductor circuit element 245 respectively. Also, by energizing the electrode 113 and the electrode 263, the joining becomes stronger.

[0150] In addition, a space 247 surrounded by the electrode 113, the partition wall 104a, and the underlayer film 204 is generated, and the space 24 When the desiccant 242 is disposed at 7, it is possible to prevent moisture from entering the light-emitting layer 112.

[0151] Further, an example in which the light-emitting element 145 and the semiconductor circuit element 245 are bonded together by the anisotropic conductive resin film 331 is shown in FIG. 21. By bonding the light-emitting element 145 and the semiconductor circuit element 245 using the anisotropic conductive resin film 331, the convex portion of the electrode 113 and the electrode 217 are electrically connected via the conductive particles 332 contained in the anisotropic conductive resin film 331. Since the anisotropic conductive resin film 331 conducts only in the longitudinal direction, conduction occurs only between the convex portion of the electrode 113 and the electrode 263. The anisotropic conductive resin film 331 conducts only in the longitudinal direction, so conduction occurs only between the convex portion of the electrode 113 and the electrode 263. The anisotropic conductive resin film 331 conducts only in the longitudinal direction, so conduction occurs only between the convex portion of the electrode 113 and the electrode 263. Conduction occurs.

[0152] Further, the light-emitting element 145 and the semiconductor circuit element 245 may be bonded together with a non-conductive paste (Non Conductive Paste: NCP). uctive Paste: NCP).

[0153] Further, regarding a semiconductor circuit element having a configuration different from that of FIG. 10(B), a method for manufacturing the same, and a light-emitting device and a method for manufacturing the same, FIGS. 23(A) to 23(B) and FIGS. 24(A) to 24(B) will be used for explanation.

[0154] First, based on the manufacturing process up to FIG. 8(B), on the substrate 221, a separation layer 222, an underlayer film 204, a gate insulating film 205, an insulating film 206, an insulating film 207, an electrode 217, an insulating film 208 , and a TFT 211 having an electrode 215a and an electrode 215b are formed.

[0155] On the insulating film 208 and the electrode 217, a resin layer 251 and a support 252 are formed (see FIG. 23 (A)). In the present embodiment, a water-soluble resin is used as the resin layer 251, and a UV tape is used as the support 2 52. Further, before forming the resin layer 251 and the support 252, Similarly to the manufacturing process shown in FIG. 9(B), a laser beam may be irradiated to form a groove.

[0156] Next, at the interface between the separation layer 222 and the base film 204, the substrate 221 on which the separation layer 222 is formed is separated from the semiconductor circuit element 255 having the base film 204, the gate insulating film 205, the insulating film 206, the insulating film 207, the insulating film 2 08, the TFT 211, and the electrode 217. Next, the substrate 201 on which the insulating film 202 and the adhesive layer 203 are formed and the semiconductor circuit element 255 are bonded together by the adhesive layer 203 (see FIG. 23(B)).

[0157] Next, the support 252 is separated by dissolving and removing the resin layer 251. Other soluble resins, plastic resins, etc. may also be used for the resin layer 251, and the semiconductor circuit element 255 and the support 252 may be separated chemically or physically (see FIG. 24(A)).

[0158] Based on the manufacturing processes shown in FIGS. 1, 2(A) to 2(C), 3(A) to 3(B), 4(A) to 4(B), 5(A) to 5(B), and 6(A) to 6(C), the light-emitting element 145 is manufactured, and the convex portion of the electrode 113 in the light-emitting element 145 and the electrode 217 in the semiconductor circuit element 255 are directly bonded together (see FIG. 24(B)).

[0159] Before directly bonding the convex portion of the electrode 113 and the electrode 217, it is preferable to perform plasma treatment on the surfaces of the light-emitting element 145 and the semiconductor circuit element 255, respectively. Also, by energizing the electrode 113 and the electrode 2 17, the bonding becomes stronger.

[0160] In addition, a space 241 is formed surrounded by the electrode 113, the partition wall 104a, and the structure 305, and the space 24 ​​When the desiccant 242 is arranged at 1, it is possible to prevent moisture from entering the light-emitting layer 112.

[0161] Furthermore, since the space 241 exists, even if the substrates 141 and 201 are bent, the stress can be relieved thereby.

[0162] Also, in the same manner as the configuration shown in FIG. 12, through the anisotropic conductive resin film 331 containing the conductive particles 332, the light-emitting element 145 and the semiconductor circuit element 255 may be bonded together, and the convex portion of the electrode 113 and the conductive resin 306 may be electrically connected.

[0163] Also, the light-emitting element 145 and the semiconductor circuit element 255 may be bonded together with a non-conductive paste (Non Cond uctive Paste: NCP).

[0164] As described above, a light-emitting device having a light-emitting element and a semiconductor circuit element is manufactured. By manufacturing the light-emitting element and the semiconductor circuit element on separate substrates and bonding them together, a semiconductor circuit is not formed below the light-emitting element, and the occurrence of coverage failure due to steps can be suppressed .

[0165] Also, since the light-emitting element and the semiconductor circuit element for driving it can be arranged on a flexible substrate, even if they are bonded together, the shape can be changed, and they can be incorporated into electronic devices of various shapes.

[0166] [Embodiment 2] In this embodiment, a mobile phone incorporating the light-emitting device described in Embodiment 1 will be described with reference to FIGS. 13(A) to 13(D), FIGS. 22(A) to 22(B), FIGS. 25, 26, 27 (A) to 27(D), FIGS. 28(A) to 28(B). In this embodiment, ​​In the drawings, the same elements are denoted by the same symbols.

[0167] FIG. 13(C) is a front view of the mobile phone, and FIG. 13(D) is a side view of the mobile phone. 13B is a vertical view of the mobile phone, and FIG. 13A is a cross-sectional view of the housing 411. The shape of the housing 411 when viewed from the front is a rectangle having a long side and a short side. In this embodiment, the corners are rounded in a direction parallel to the long side of the rectangular front shape. is called the longitudinal direction, and the direction parallel to the shorter side is called the transverse direction.

[0168] In addition, the shape of the housing 411 when viewed from the side is also a rectangle having a long side and a short side. In this embodiment, the corners are rounded in a direction parallel to the long side of the rectangular shape. is the longitudinal direction, and the direction parallel to the short side is called the depth direction.

[0169] The mobile phone shown in FIG. 13(A) to FIG. 13(D) includes a housing 411, a housing 402, a housing A display area 413, an operation button 404, an EL panel 421, and a touch panel 412 are incorporated in the The substrate 416 includes a support 416 and a panel 423 .

[0170] The EL panel 421 and a driving circuit 412 described later are the same as those described in the first embodiment. The EL panel 421 may be formed using a light-emitting device having a semiconductor circuit element. A semiconductor circuit element is used as a pixel circuit for driving the light element and the light emitting element. The driver circuit 412 may further be fabricated using semiconductor circuit elements.

[0171] FIG. 28A is a perspective view of the housing 411, and shows the largest area of ​​the housing 411. The surface of the front surface 455 is the back surface 452, and the surface between the front surface 455 and the back surface 452 is the back surface 452. The area to be processed is surrounded by the side surface 453, the front surface 455, the back surface 452, and the area within the area surrounded by the side surface 453. One of them is the upper surface 454.

[0172] Also, FIG. 22(A) is a view seen from the back surface of the mobile phone shown in FIGS. 13(A) to 13(D). It is.

[0173] As shown in FIG. 22(A), the drive circuit 412 is arranged on the back surface 452 of the housing 411. It is manufactured in such a way.

[0174] FIG. 22(B) is a top view when rotated 90° horizontally from the state shown in FIG. 13(C). The mobile phone of this embodiment can display images and characters whether it is placed vertically or horizontally. It can.

[0175] As shown in FIG. 13(A), inside the housing 411, there is a support 416, and an EL panel 421 is arranged on the support 416. Here, it covers the upper surface area of the support 416. It is. It is.

[0176] In this way, the display area 413 exists at the upper part in the longitudinal direction of the mobile phone. That is, the display area 413 exists on the upper surface 454. As a result, for example, even if the mobile phone is placed in a chest pocket, it is possible to view the display area 413 without taking it out. That is, the display area 413 exists on the upper surface 454. As a result, for example, even if the mobile phone is placed in a chest pocket, it is possible to view the display area 413 without taking it out. In this way, the display area 413 exists at the upper part in the longitudinal direction of the mobile phone. That is, the display area 413 exists on the upper surface 454. As a result, for example, even if the mobile phone is placed in a chest pocket, it is possible to view the display area 413 without taking it out.

[0177] The display area 413 may display the presence or absence of mail, the presence or absence of an incoming call, the date and time, the phone number, the name of the person, etc. Also, if necessary, by displaying the area existing on the upper surface 454 of the display area 413 and not displaying the other areas, energy saving can be achieved. It can be achieved. By not displaying the other areas, energy saving can be achieved.

[0178] The cross-sectional view of FIG. 13(D) is shown in FIG. 25. As shown in FIG. 25, within the housing 411, the EL panel 421 and the touch panel 423 are arranged along the support 416, and the display area 413 exists on the front surface 455 and the upper surface 454 of the housing 411.

[0179] Also, the development views of the EL panel 421 and the drive circuit 412 are shown in FIG. 26. In FIG. 26 the EL panel 421 is fabricated to be arranged on the upper surface 454 and the back surface 452, and the drive circuit 412 is arranged on the back surface 452. By fabricating the EL panel 421 not separately for the front surface 4 55 and the upper surface 454 but to exist on both the front surface 455 and the upper surface 454, the manufacturing cost and the manufacturing time can be suppressed.

[0180] The touch panel 423 is arranged on the EL panel 421, and the buttons 414 of the touch panel are displayed in the display area 413. By touching the buttons 414 with a finger or the like the display content of the display area 413 can be operated. Also, making a phone call or creating a mail can be done by touching the buttons 414 in the display area 413 with a finger or the like.

[0181] The buttons 414 of the touch panel 423 may be displayed when necessary, and when the buttons 414 are not necessary, an image or characters can be displayed over the entire display area 413 as shown in FIG. 22(B).

[0182] Furthermore, a display area 433 also exists at the upper part in the longitudinal direction of the mobile phone, and an example where the upper long side also has a radius of curvature in the cross-sectional shape of the mobile phone is shown in FIGS. 27(A) to 27(D) and ​​​​​as shown in Fig. 28(B).

[0183] Fig. 27(C) is a front view of the mobile phone, Fig. 27(D) is a side view of the mobile phone seen from the side, Fig. 27(B) is a top view of the mobile phone, and Fig. 27(A) is a cross-sectional view of the housing 431 is. The shape of the housing 431 seen from the front is a rectangle having a long side and a short side, and the corners of the rectangle may be rounded. In the present embodiment, the direction parallel to the long side of the rectangle is referred to as the longitudinal direction and the direction parallel to the short side is referred to as the short side direction.

[0184] The mobile phone shown in Figs. 27(A) to 27(D) includes a housing 431, a housing 402, a housing 431 incorporated with a display area 433, operation buttons 404, an EL panel 441, a touch panel 443, and a support 436.

[0185] The EL panel 441 and the drive circuit 412 may be formed using the light-emitting element and the semiconductor circuit element described in Embodiment 1. As the EL panel 441, a light-emitting element and a pixel circuit for driving the light-emitting element are used as semiconductor circuit elements. As the drive circuit 412 for driving the pixel circuit Furthermore, it may be manufactured using semiconductor circuit elements.

[0186] Note that Fig. 28(B) is a perspective view of the housing 431. Similar to Fig. 28(A), the largest area region of the housing 43 1 is the front 455, the surface opposite to the front 455 is the back surface 452, and the region existing between the front 45 5 and the back surface 452 is the side surface 453. One of the regions surrounded by the front 455, the back surface 452, and the side surface 45 3 is defined as the upper surface 454.

[0187] Also, the view of the mobile phone shown in Figs. 27(A) to 27(D) seen from the back is shown in Fig. 13(A ) is the same as that shown in FIGS. 13(D) and is FIG. 22(A).

[0188] Similar to FIG. 22(A), the drive circuit 412 is arranged on the back surface 452 of the housing 431. It is manufactured. The views of the mobile phone seen from the back surface shown in FIGS. 27(A) to 27(D) may be obtained by replacing the housing 411 in FIG. 22(A) with the housing 431.

[0189] In the mobile phone shown in FIGS. 27(A) to 27(D), the cross-sectional shape of the support 436 is formed to have a radius of curvature on the upper long side. As a result, in the cross-sectional shape of each of the EL panel 441 and the touch panel 443, the upper long side has a radius of curvature. Also, the upper part of the housing 431 is curved. That is, when the display area 433 is viewed from the front 455, it protrudes roundly forward.

[0190] If the radius of curvature of the upper long side of the support 436 is R1, the radius of curvature R1 is preferably 20 cm to 30 cm.

[0191] Since the upper long side of the support 436 is curved so as to have a radius of curvature R1, the EL panel 441 covering the support 4 36, the touch panel 443 covering the EL panel 441, and the housing 431 also have a curved upper long side.

[0192] In the mobile phone shown in FIGS. 27(A) to 27(D), the display area 433 also exists in the upper part in the longitudinal direction of the mobile phone. That is, the display area 433 also exists on the upper surface 454. As a result, for example, even if the mobile phone is placed in a chest pocket, the display area 433 can be viewed without taking it out.

[0193] The display area 433 can display the presence or absence of emails, incoming calls, date and time, phone numbers, names of people, etc. If necessary, the area existing on the upper surface 454 of the display area 433 may be displayed, and by not displaying the other areas, energy saving can be achieved.

[0194] Also, the developed views of the EL panel 441 and the drive circuit 412 are shown in FIGS. 13(A) to 13(D). Similarly, it is FIG. 26. Just replace the EL panel 421 with the EL panel 441. In FIG. 26, the drive circuit 412 is arranged on the upper surface 454 and the back surface 452.

Explanation of Reference Numerals

[0195] 102 Base film 104a Partition 104b Partition 105 Spacer 106 Spacer 107a EL material layer 107b EL material layer 108a Conductive material layer 108b Conductive material layer 111 Electrode 112 Light-emitting layer 113 Electrode 121 Insulating film 131 Substrate 132 Separation layer 134 Laser beam 135 Opening 137 Laminated structure 138 Insulating film 141 Substrate 142 Insulating film 143 Adhesive layer 145 Light-emitting element 201 Substrate 202 Insulating film 203 Adhesive layer 204 Base film 205 Gate insulating film 206 Insulating film 207 Insulating film 208 Insulating film 211 TFT 215a Electrode 215b Electrode 217 Electrode 221 Substrate 222 Separation layer 225 Laser beam 227 Groove 231 Island semiconductor film 232 Laminated structure 233 Channel formation region 234a Region 234b Region 235 Semiconductor circuit element 236 Gate electrode 237 Laminated structure 241 Space 242 Desiccant 245 Semiconductor circuit element 247 Space 251 Resin layer 252 Support material 255 Semiconductor circuit element 261 TFT 262 Electrode 263 Electrode 301 Organic resin 302 Sheet-like fibrous body 302a Warp 302b Weft 302c Basket hole 305 Structure 306 Conductive resin 331 Anisotropic conductive resin film 332 Conductive particles 402 Housing 404 Operation button 411 Housing 412 Drive circuit 413 Display area 414 Button 416 Support 421 EL panel 423 Touch panel 431 Housing 433 Display area 436 Support 441 EL Panel 443 Touch Panel 452 Back Surface 453 Side Surface 454 Top Surface 455 Front Surface

Claims

【Claim 1】 A first flexible substrate having a first electrode, a light-emitting layer on the first electrode, and a second electrode disposed on the light-emitting layer and having a convex portion; A second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit; and The convex portion of the second electrode and the third electrode are electrically connected by an anisotropic conductive film containing conductive particles. A light-emitting device characterized by that.

Images