Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction, and method of setting the same

Abstract

To provide a monocrystalline semiconductor semi-finished product and a monocrystalline semiconductor substrate having improved mechanical robustness to fissure, and a method of producing such monocrystalline semiconductor semi-finished product and / or substrate.SOLUTION: A monocrystalline semiconductor semi-finished product or a monocrystalline semiconductor substrate having a central axis and an at least partially curved lateral surface parallel to the central axis, in which the crystal structure of the monocrystalline semiconductor is oriented in a predetermined orientation relative to the central axis and the at least partially curved lateral surface, wherein in the predetermined orientation, a first crystallographic axis perpendicular to a set of first cleavage planes makes a first tilt angle with a plane transverse to the central axis, and a second crystallographic axis perpendicular to both a set of second cleavage planes and the first crystallographic axis makes a second tilt angle with the plane transverse to the central axis, thereby causing each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage planes to be inclined relative to the central axis.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor single crystal having a specific orientation of a crystal structure and a method for manufacturing a semiconductor single crystal having such an orientation in order to reduce or eliminate the occurrence of cracks and fractures during mechanical processing.

Background Art

[0002] Semiconductor substrates are commonly used in the manufacture of electronic and optoelectronic components for a wide range of applications such as power electronics, radio frequency, and optoelectronic applications. Semiconductor substrates are generally made from a suitable raw material substance by growing a bulk semiconductor single crystal by a crystal growth process such as physical vapor transport (PVT), solution growth, or melt growth. The semiconductor substrate is then obtained by cutting the wafer using a wire saw and then refining the wafer surface in multiple polishing steps. Subsequently, in a subsequent epitaxy process, a thin single crystal layer of a semiconductor material (e.g., SiC, GaN) is deposited on the semiconductor substrate. The properties of those epitaxial layers and the components made therefrom depend critically on the quality of the underlying semiconductor substrate.

[0003] The desired diameter of the substrate and one or more orientation flats (OF) are generally set on the grown semiconductor crystal through a mechanical process such as grinding of the crystal side surface, and each main surface of the crystal cylinder thus processed is prepared for a wafer separation process (e.g., by wire sawing). As shown in FIG. 1, the semiconductor semi-finished product 100 obtained from such a mechanical process has the diameter of the future substrate wafer and the side cylindrical surface 13 ​​One or two orientation flats 110 (or notches) defined at 0 and a cylindrical body having parallel and flat main surfaces 120a, 120b.

[0004] The semiconductor semi-finished product 100 is then separated into individual raw single crystal semiconductor substrates, for example using a wire saw process. After quality control, the single crystal semiconductor substrates undergo further mechanical processing. As an example, the following process steps may be used. After mechanical processing of the edge, a single or multi-step grinding or polishing process is performed to remove the damaged layer generated during the substrate separation process and gradually reduce the roughness of the substrate. Next, a chemical mechanical polishing process (CMP) is applied to one or both sides of the substrate for final finishing of each surface. The orientation of the underlying crystal structure with respect to the finished surface is one of the determining factors for the properties of the epitaxial layer to be grown later on the substrate. During the multi-step mechanical processing as described above, the bulk single crystal and the substrate are subjected to significant mechanical forces. However, semiconductor crystals are known to exhibit high brittleness and low ductility. Specifically,

[0005] cracks and fractures are, for example, in the form in semiconductors having a wurtzite-type crystal structure (e.g., AlN, Ga N, InN) and the crystal planes of, or in semiconductors having a zinc blende-type crystal structure (e.g., GaAs, GaN, InP, etc.)

[0006]

Number

[0007]

Number

[0008] In the mechanical processing of semiconductor semi-finished products, both the step of machining the edge of the substrate and the step of polishing are very important. For example, when chamfering the edge of the substrate, a cup-shaped grinding wheel is used, and a radial force is applied to the outer diameter of the substrate. During polishing when the substrate is guided inside a rotary disk, a similar radial force is exerted on the outer diameter of the substrate by those rotary disks.

[0009]

[0010] As a result, during the mechanical processing of each bulk crystal and substrate, special attention must be paid to the presence of the cleavage lattice plane as well as the high brittleness of the semiconductor material.

[0011] So far, the existing technology has not addressed the anisotropy of the mechanical properties of the semiconductor crystal lattice, which is why, in practice, the yield loss caused by the generation of cracks during mechanical processing has occurred. ​​​​​​​​​​​​​It has generally been allowed that there is always a certain amount of waste in bulk semiconductor crystals and semiconductor substrates. However, these have a negative impact on the yield of the overall process chain. However, these have a negative impact on the yield of the overall process chain.

[0012] During the mechanical processing of the outer periphery of a bulk semiconductor cylinder, by adjusting the parameters of the mechanical process steps themselves, such as the applied force and grinding speed, it is possible to reduce the occurrence of cracks and fractures within certain limits, even if they cannot be completely eliminated. However, such adjustments have a negative impact on other process parameters, such as an increase in the duration and cost of the process. During the mechanical processing of the outer periphery of a bulk semiconductor cylinder, by adjusting the parameters of the mechanical process steps themselves, such as the applied force and grinding speed, it is possible to reduce the occurrence of cracks and fractures within certain limits, even if they cannot be completely eliminated. However, such adjustments have a negative impact on other process parameters, such as an increase in the duration and cost of the process. During the mechanical processing of the outer periphery of a bulk semiconductor cylinder, by adjusting the parameters of the mechanical process steps themselves, such as the applied force and grinding speed, it is possible to reduce the occurrence of cracks and fractures within certain limits, even if they cannot be completely eliminated. However, such adjustments have a negative impact on other process parameters, such as an increase in the duration and cost of the process. During the mechanical processing of the outer periphery of a bulk semiconductor cylinder, by adjusting the parameters of the mechanical process steps themselves, such as the applied force and grinding speed, it is possible to reduce the occurrence of cracks and fractures within certain limits, even if they cannot be completely eliminated. However, such adjustments have a negative impact on other process parameters, such as an increase in the duration and cost of the process. During the mechanical processing of the unprocessed semiconductor substrate obtained after wire sawing a semiconductor semi-finished product cylinder (for example, during chamfering of the edge, mechanical grinding, mechanical or chemical mechanical polishing, etc.), fractures and cracks can be reduced by adjusting the process parameters, but they cannot be completely avoided. Such adjustments also have a negative impact on other process parameters, such as a significant increase in the duration of the mechanical processing of the substrate. During the mechanical processing of the unprocessed semiconductor substrate obtained after wire sawing a semiconductor semi-finished product cylinder (for example, during chamfering of the edge, mechanical grinding, mechanical or chemical mechanical polishing, etc.), fractures and cracks can be reduced by adjusting the process parameters, but they cannot be completely avoided. Such adjustments also have a negative impact on other process parameters, such as a significant increase in the duration of the mechanical processing of the substrate. During the mechanical processing of the unprocessed semiconductor substrate obtained after wire sawing a semiconductor semi-finished product cylinder (for example, during chamfering of the edge, mechanical grinding, mechanical or chemical mechanical polishing, etc.), fractures and cracks can be reduced by adjusting the process parameters, but they cannot be completely avoided. Such adjustments also have a negative impact on other process parameters, such as a significant increase in the duration of the mechanical processing of the substrate. During the mechanical processing of the unprocessed semiconductor substrate obtained after wire sawing a semiconductor semi-finished product cylinder (for example, during chamfering of the edge, mechanical grinding, mechanical or chemical mechanical polishing, etc.), fractures and cracks can be reduced by adjusting the process parameters, but they cannot be completely avoided. Such adjustments also have a negative impact on other process parameters, such as a significant increase in the duration of the mechanical processing of the substrate. During the mechanical processing of the unprocessed semiconductor substrate obtained after wire sawing a semiconductor semi-finished product cylinder (for example, during chamfering of the edge, mechanical grinding, mechanical or chemical mechanical polishing, etc.), fractures and cracks can be reduced by adjusting the process parameters, but they cannot be completely avoided. Such adjustments also have a negative impact on other process parameters, such as a significant increase in the duration of the mechanical processing of the substrate.

[0013] Among the known prior art methods, there is none that takes into account the special requirements regarding crystal orientation presented for the processing of single-crystalline semiconductors in bulk or substrate form due to the anisotropy of the mechanical properties of single-crystalline semiconductors. Also, so far, the influence of crystal orientation on the susceptibility of the final semi-finished product and / or substrate to cracking has not been considered by the prior art. Among the known prior art methods, there is none that takes into account the special requirements regarding crystal orientation presented for the processing of single-crystalline semiconductors in bulk or substrate form due to the anisotropy of the mechanical properties of single-crystalline semiconductors. Also, so far, the influence of crystal orientation on the susceptibility of the final semi-finished product and / or substrate to cracking has not been considered by the prior art. Among the known prior art methods, there is none that takes into account the special requirements regarding crystal orientation presented for the processing of single-crystalline semiconductors in bulk or substrate form due to the anisotropy of the mechanical properties of single-crystalline semiconductors. Also, so far, the influence of crystal orientation on the susceptibility of the final semi-finished product and / or substrate to cracking has not been considered by the prior art. Among the known prior art methods, there is none that takes into account the special requirements regarding crystal orientation presented for the processing of single-crystalline semiconductors in bulk or substrate form due to the anisotropy of the mechanical properties of single-crystalline semiconductors. Also, so far, the influence of crystal orientation on the susceptibility of the final semi-finished product and / or substrate to cracking has not been considered by the prior art. Among the known prior art methods, there is none that takes into account the special requirements regarding crystal orientation presented for the processing of single-crystalline semiconductors in bulk or substrate form due to the anisotropy of the mechanical properties of single-crystalline semiconductors. Also, so far, the influence of crystal orientation on the susceptibility of the final semi-finished product and / or substrate to cracking has not been considered by the prior art.

[0014] A solution for reducing the occurrence of cracks that may occur even during the mechanical processing of a semiconductor semi-finished product or semiconductor substrate with low stress or no stress due to the applied mechanical force has not been disclosed. A solution for reducing the occurrence of cracks that may occur even during the mechanical processing of a semiconductor semi-finished product or semiconductor substrate with low stress or no stress due to the applied mechanical force has not been disclosed.

[0015] Therefore, while improving the quality and yield of semiconductor semi-products and semiconductor substrates, without significantly increasing the overall cost and time of mechanical processing, the amount of defective semiconductor semi-products and / or semiconductor substrates caused by the occurrence of cracks during mechanical processing is efficiently reduced. A solution is needed that enables this.

Summary of the Invention

[0016] The present invention has been made in view of the drawbacks and inconveniences of the prior art, and its object is to provide single-crystal semiconductor semi-products and single-crystal semiconductor substrates with improved mechanical robustness against forces applied during manufacturing and / or during mechanical processing of the external surface of the semiconductor substrate, and a method for manufacturing such single-crystal semiconductor semi-products and / or substrates. This object is solved by the subject matter of the independent claims. Advantageous embodiments of the invention are the subject matter of the dependent claims.

[0017] According to the present invention, there is provided a single-crystal semiconductor semi-product or single-crystal semiconductor substrate having improved mechanical robustness against cleavage, the semiconductor semi-product or substrate having a central axis and a side surface that is at least partially curved and parallel to the central axis, and the crystal structure of the single-crystal semiconductor being oriented in a predetermined orientation with respect to the central axis and the at least partially curved side surface, and in the predetermined orientation, a first crystal axis perpendicular to a first set of cleavage planes forms a first inclination angle with a plane transverse to the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane transverse to the central axis, whereby the first or

[0018] According to the present invention, a single-crystal semiconductor semi-product or single-crystal semiconductor substrate having improved mechanical robustness against cleavage is provided, the semiconductor semi-product or substrate having a central axis and a side surface that is at least partially curved and parallel to the central axis, and the crystal structure of the single-crystal semiconductor being oriented in a predetermined orientation with respect to the central axis and the at least partially curved side surface, and in the predetermined orientation, a first crystal axis perpendicular to a first set of cleavage planes forms a first inclination angle with a plane transverse to the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane transverse to the central axis, whereby the first or It has a side surface that is at least partially curved and parallel to the central axis, and the crystal structure of the single-crystal semiconductor is oriented in a predetermined orientation with respect to the central axis and the at least partially curved side surface. In the predetermined orientation, a first crystal axis perpendicular to a first set of cleavage planes forms a first inclination angle with a plane transverse to the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane transverse to the central axis. Thus, the first or The crystal structure of the single-crystal semiconductor is oriented in a predetermined orientation with respect to the central axis and the at least partially curved side surface. In the predetermined orientation, a first crystal axis perpendicular to a first set of cleavage planes forms a first inclination angle with a plane transverse to the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane transverse to the central axis. As a result, the first or In the predetermined orientation, a first crystal axis perpendicular to a first set of cleavage planes forms a first inclination angle with a plane transverse to the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane transverse to the central axis. Thereby, the first or axis forms a first inclination angle with a plane transverse to the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane transverse to the central axis, such that the first or axis forms a first inclination angle with a plane transverse to the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane transverse to the central axis, so that the first or Each set of parallel cleavage planes that is symmetrically equivalent to any of the second cleavage planes is inclined with respect to the central axis. It is characterized in that.

[0019] According to a further development form, the first inclination angle and the second inclination angle are such that each set of the first and second cleavage planes intersects a side surface that is at least partially curved along a line segment parallel to the central axis, and there are at least a predetermined minimum number of parallel cleavage planes per unit length of the line segment. The first and second cleavage planes are each selected accordingly. The first and second cleavage planes are each selected accordingly. It is selected respectively.

[0020] According to a further development form, the predetermined minimum number of parallel cleavage planes per unit length is at least 1000 planes per millimeter, and / or the central axis is the axis of symmetry of a cylindrical surface defined by the curved portion of the side surface that is at least partially curved. It is. It is. There is.

[0021] According to a further development form, the first inclination angle is estimated based on the distance between the first cleavage planes perpendicular to the first crystal axis so as to provide the at least predetermined minimum number of parallel cleavage planes per unit length, and / or the second inclination angle is estimated based on the distance between the second cleavage planes perpendicular to the second crystal axis. The first inclination angle is estimated based on the distance between the first cleavage planes perpendicular to the first crystal axis so as to provide the at least predetermined minimum number of parallel cleavage planes per unit length. The second inclination angle is estimated based on the distance between the second cleavage planes perpendicular to the second crystal axis. There is.

[0022] According to a further development form, the first crystal axis and the first inclination angle are further selected based on the requirements for epitaxial growth on a substrate made of a single crystal semiconductor. It is selected.

[0023] According to a further development form, the single crystal semiconductor semi - product or substrate further comprises first and second main surfaces, and the first and second main surfaces are opposite to the side surface that is at least partially curved. The first and second main surfaces are opposite to the side surface that is at least partially curved. being perpendicular respectively, and / or one or both of the first and second major surfaces being perpendicular to the central axis, and / or said at least partially curved side surface having a curved portion defining a cylindrical surface, said central axis being its axis of symmetry.

[0024] According to a further development, the semiconductor semi-finished product or semiconductor substrate is made of a semiconductor material selected from the group comprising silicon, III-V -HL type semiconductors, II-VI-HL type semiconductors, and II-VI mixed crystals.

[0025] According to a further development, the semiconductor semi-finished product or substrate is made of a semiconductor material having one of a wurtzite structure, a diamond -type structure, and a zinc blende structure.

[0026] According to a further development, the semiconductor crystal structure is a wurtzite structure, and the first crystal axis is one of the axes or

[0027]

Number

[0028]

Number

[0029] According to a further development, the semiconductor crystal structure is a diamond-type structure, and the first crystal ​​The axis is a crystal that is the

[0111] axis or a crystal axis symmetrically equivalent to the

[0111] axis in a diamond-type structure of the axes, or the semiconductor crystal structure is a zinc blende-type structure, and the first crystal axis is a crystal axis that is the

[0110] axis or a crystal axis symmetrically equivalent to the

[0110] axis in a zinc blende-type structure of the axes.

[0030] The present invention further provides a method for manufacturing a single-crystal semiconductor semi-finished product or a single-crystal semiconductor substrate having improved mechanical robustness against cleavage, the single-crystal semiconductor semi-finished product or substrate having a central axis and a side surface that is at least partially curved and parallel to the central axis, the method comprising orienting the semiconductor crystal structure in a predetermined orientation with respect to the central axis and the at least partially curved side surface, the method including performing a process of setting the orientation of the semiconductor crystal structure in a predetermined orientation with respect to the central axis and the at least partially curved side surface, wherein in the predetermined orientation, a first crystal axis perpendicular to a first set of cleavage planes forms a first inclination angle with a plane intersecting the central axis, and a second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane intersecting the central axis, whereby each set of parallel cleavage planes that is symmetrically equivalent to either the first or second cleavage plane is inclined with respect to the central axis. According to a further development, the first inclination angle and the second inclination angle are such that each set of the first and second cleavage planes intersects the at least partially curved side surface along a line segment parallel to the central axis, and there are at least a predetermined minimum number of parallel cleavage planes per unit length of the line segment such that, respectively, they are selected.

[0031] According to a further development, the predetermined minimum number of parallel cleavage planes per unit length is milli

[0032] ​​​​​​At least 1000 surfaces per meter and / or the central axis is the axis of symmetry of the cylindrical surface defined by the curved portion of the side surface that is at least partially curved.

[0033] According to a further development form, the method estimates the first tilt angle based on the distance between the first cleavage planes perpendicular to the first crystal axis so as to provide at least the predetermined minimum number of parallel cleavage planes per unit length and / or estimates the second tilt angle based on the distance between the second cleavage planes perpendicular to the second crystal axis.

[0034] According to a further development form, the first crystal axis and the first tilt angle are further selected based on the requirements for epitaxial growth on a substrate made of a single crystal semiconductor.

[0035] According to a further development form, the semiconductor crystal structure is one of a wurtzite structure, a diamond structure, and a zinc blende structure.

[0036] According to a further development form, the semiconductor crystal structure is a wurtzite structure, and the first crystal axis is in the wurtzite structure

[0037]

Number

[0038]

Number

[0111] axis in the diamond crystal structure or a crystal axis that is symmetrically equivalent to the

[0111] axis, or the semiconductor crystal structure is zinc blende It has a zinc blende crystal structure, and the first crystal axis is either the

[0110] axis in the zinc blende crystal structure or a crystal axis that is symmetrically equivalent to the

[0110] axis.

[0039] According to a further development form, the process of setting the predetermined orientation of the semiconductor crystal structure with respect to the central axis of the semiconductor semi-finished product is such that the semiconductor crystal structure is spatially oriented with respect to the alignment axis so as to realize the predetermined orientation of the semiconductor crystal structure with respect to the plane crossing the alignment axis, and at least one of the side surfaces that is at least partially curved and substantially parallel to the alignment axis, and at least one main surface that is substantially perpendicular to the alignment axis, is formed by machining the outer surface of the spatially oriented semiconductor crystal structure with reference to the alignment axis, and the alignment axis of the spatially oriented semiconductor crystal structure is selected to be parallel to the central axis of the semiconductor semi-finished product. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting.

[0040] According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis includes aligning the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane crosses a set of first and second cleavage planes, and tilting the reference lattice plane by a first tilt angle in a first direction, where the first direction corresponds to the first crystal axis perpendicular to the set of first cleavage planes, whereby the set of first cleavage planes is tilted by the first tilt angle with respect to the alignment axis and the set of second cleavage planes remains parallel to the alignment axis, including tilting.

[0041] According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis is to tilt the reference lattice plane by a second tilt angle in a second direction, where the second direction corresponds to a second crystal axis, whereby a set of second cleavage planes is tilted by the second tilt angle with respect to the alignment axis, and further includes tilting. In a further development form, the semiconductor crystal structure is a wurtzite structure, and the first crystal axis is one of the axes or a crystal axis symmetrically equivalent to the axis in the wurtzite structure. Further, in the case of SiC, the first tilt angle may be 4° with an allowable tolerance of ±0.5°, and / or the second tilt angle is a value selected from the interval [0.015°; 0.153°], or preferably 0.023°. According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis is to align the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane intersects the cleavage plane of the first crystal form, and align the reference lattice plane by a predetermined rotation angle in the clockwise or counterclockwise direction around the alignment direction, and tilt the rotated reference lattice plane by a given tilt angle. Including. Including.

[0042] According to a further development form, the semiconductor crystal structure is a wurtzite structure, and the first crystal axis is one of the axes or a crystal axis symmetrically equivalent to the axis in the wurtzite structure. In the wurtzite structure.

[0043]

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[0044]

Number

[0045] According to a further development form, the process of spatially orienting the semiconductor crystal structure with respect to the alignment axis is to align the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane intersects the cleavage plane of the first crystal form, and align the reference lattice plane by a predetermined rotation angle in the clockwise or counterclockwise direction around the alignment direction, and tilt the rotated reference lattice plane by a given tilt angle. Align the main crystal axis of the selected reference lattice plane along the alignment direction, where the reference lattice plane intersects the cleavage plane of the first crystal form, and align the reference lattice plane by a predetermined rotation angle in the clockwise or counterclockwise direction around the alignment direction, and tilt the rotated reference lattice plane by a given tilt angle. Aligning, where the reference lattice plane intersects the cleavage plane of the first crystal form, and aligning the reference lattice plane by a predetermined rotation angle in the clockwise or counterclockwise direction around the alignment direction, and tilting the rotated reference lattice plane by a given tilt angle. And rotate the reference lattice plane by a predetermined rotation angle in the clockwise or counterclockwise direction around the alignment direction, and tilt the rotated reference lattice plane by a given tilt angle. Tilt the rotated reference lattice plane by a given tilt angle. tilting in a first direction, the first direction being parallel to a cleavage plane of a first crystal form corresponding to the crystal axes of the set, the tilting, and comprising.

[0046] According to a further development form, the semiconductor crystal structure is a wurtzite structure, and the reference lattice plane is the bottom plane (0001), and the first crystal axis is in the wurtzite structure

[0047]

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[0048]

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[0049]

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[0050]

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[0051]

Number

[0052] According to a further development form, the semiconductor semi-finished product is selected from the group consisting of silicon, III-V-HL type semiconductors, II-VI-HL type semiconductors, and II-VI mixed crystals, and is made of a semiconductor material selected from the group.

[0053] The accompanying drawings are incorporated herein for the purpose of illustrating the principles of the present invention and form a part thereof. The drawings are not to be construed as limiting the invention to the illustrated and described examples of how the invention may be made and used.

[0054] Further features and advantages of the present invention will become apparent from the following more detailed description of the invention illustrated in the accompanying drawings.

Brief Description of the Drawings

[0055]

Figure 1

Figure 2

[0001] being inclined at 0° with respect to the cylindrical symmetry axis C (central axis), and the crystal form

[0056]

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[0057]

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[0058]

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[0059]

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[0060]

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[0061]

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[0062]

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[0063]

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[0064]

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[0065]

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Figure 3A

[0066]

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Figure 3B

[0067]

Number

[0068] [Number] The bottom surface at an angle δ of 4° in the direction (i.e., in the direction parallel to the main flat OF in Fig. 3A) (0001) and a diagram depicting the inclination of the corresponding

[0001] crystal axis.

Figure 4A

[0069] [Number] A schematic side view of a semiconductor semi-finished product having a wurtzite-type structure and an off-axis orientation of 4°, as seen from the side containing the crystal direction (i.e., the side of the main flat OF), and the initial

[0070] [Number] A diagram depicting the inclination of the bottom surface (0001) (reference lattice plane) and the corresponding

[0001] crystal direction at an inclination angle δ of 4° in the direction.

Figure 4B

[0071] [Number] A further schematic side view of the semiconductor semi-finished product shown in Fig. 4A when viewed from the side opposite to the crystal direction, with a cleavage plane parallel to the central symmetry axis C of the semiconductor cylinder

[0072] [Number] depicting the orientation of, and the crystal axis having an off-axis orientation of 4°

[0073] [Number] is not perpendicular to the plane of Fig. 4B, but is inclined downward by an angle of 4° in the viewing direction .

Figure 5

Figure 6

Figure 7

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Figure 8

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Figure 9A

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[0080]

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Figure 9B

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Figure 10A

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Figure 10B

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Figure 11

Figure 12

Figure 13A

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Figure 13B

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[0090]

Mathematics

DETAILED DESCRIPTION OF THE INVENTION

[0091] In the present application, since the atomic scale is discussed, it should be noted that the dimensions and relative angles shown in the drawings are for illustrative purposes only and are not drawn to a certain scale. For the purpose of understanding, and are not drawn to a certain scale.

[0092] The present invention will hereinafter be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout. However, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout. The principles underlying the present invention are based on the recognition by the inventors that the occurrence of cracks or fractures in single-crystalline semiconductor semi-products and substrates during individual mechanical processes can be significantly reduced or even eliminated by setting the orientation of the crystal structure of the single-crystalline semiconductor to a predetermined orientation with respect to the central axis and / or the side surface of the semiconductor semi-product or substrate, where the crystal axes associated with the preferential cleavage lattice planes are inclined by respective inclination angles with respect to a plane transverse to the central axis.

[0093] The principles underlying the present invention are based on the recognition by the inventors that the occurrence of cracks or fractures in single-crystalline semiconductor semi-products and substrates during individual mechanical processes can be significantly reduced or even eliminated by setting the orientation of the crystal structure of the single-crystalline semiconductor to a predetermined orientation with respect to the central axis and / or the side surface of the semiconductor semi-product or substrate, where the crystal axes associated with the preferential cleavage lattice planes are inclined by respective inclination angles with respect to a plane transverse to the central axis. and the substrate can be significantly reduced or even eliminated by setting the orientation of the crystal structure of the single-crystalline semiconductor to a predetermined orientation with respect to the central axis and / or the side surface of the semiconductor semi-product or substrate, where the crystal axes associated with the preferential cleavage lattice planes are inclined by respective inclination angles with respect to a plane transverse to the central axis. product or substrate, where the crystal axes associated with the preferential cleavage lattice planes are inclined by respective inclination angles with respect to a plane transverse to the central axis. The crystal axes associated with the preferential cleavage lattice planes are inclined by respective inclination angles with respect to a plane transverse to the central axis. By setting the orientation to a predetermined orientation, the occurrence of cracks or fractures can be significantly reduced or even eliminated. It is derived from the recognition of this fact.

[0094] As a result, the parallel cleavage planes associated with each crystal axis are also inclined by the same inclination angle with respect to the central axis. will tend to tilt, and the external mechanical force applied radially to the semiconductor semi-product or substrate will , regardless of the position on the side surface where the mechanical force is applied, be distributed over at least a predetermined minimum number of parallel cleavage planes, so that the radial force per unit area is reduced . The amount and / or direction of the tilt angle may be set according to the crystal form of the preferential cleavage lattice plane and the corresponding crystal axes so as to ensure that the mechanical force per unit area is lower than the cleavage threshold specific to a particular form of cleavage plane.

[0095] Accordingly, the present invention provides a technique for setting an optimal orientation of the crystal structure in a single crystal semiconductor semi-product and / or substrate, which improves the mechanical robustness of the semiconductor single crystal against cleavage, and as a result, improves the yield of the semiconductor semi-product and / or substrate without significantly affecting the quality of the epitaxial layer to be grown on the final substrate later.

[0096] The principle of the present invention will hereinafter be described with reference to a semiconductor semi-product or substrate of AlN, which is an example of a III-V type semiconductor having a wurtzite crystal structure. Nevertheless, the principle of the present invention is also applicable to any other semiconductor material having a wurtzite, diamond, or zinc blende crystal structure, such as any of the semiconductor materials shown in Table 1, in order to achieve the same effect of improving the robustness against cleavage.

[0097] As described above, cracks and fissures are forms in semiconductors having a wurtzite structure

[0098]

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[0099]

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[0100]

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[0101]

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[0001] forms an angle with the longitudinal axis C of the semiconductor cylinder 200 at 0 °C. The longitudinal axis C, which will be referred to hereinafter, is defined as the axis of symmetry of the cylindrical surface defined by the curved side surface of the semiconductor semi-finished product (or substrate). FIG. 2 shows the side parallel to the (0001) lattice plane of the semiconductor semi-finished product 2 00 (or the substrate) when viewed from each main surface 220 such as the main surface 120a of FIG. 1. The main orientation flag (OF) is the crystal direction

[0102]

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[0120] [Number] The cleavage plane of [Number] also intersects the side surface of the semiconductor semi - product 200 at a right angle, which means that the semiconductor semi - product 200 will crack easily when a radial force is applied along the drawn cleavage plane. product 200 will crack easily when a radial force is applied along the drawn cleavage plane. means.

[0121] Semiconductor substrates are generally used either in an on - axis orientation or an off - axis orientation. In the on - axis orientation, the reference lattice plane selected for forming an epitaxial layer on the substrate is parallel to the substrate surface on which the epitaxial layer will be formed later, or to the main surface of the semiconductor semi - product from which the substrate is made. And the crystal axis of the reference lattice plane is aligned with the longitudinal axis C of the semiconductor substrate or semi - product. In the case of off - axis orientation, the reference lattice plane for epitaxial growth is not parallel to the substrate surface, but is tilted by a small tilt angle corresponding to the angle between each crystal axis and the central axis C. This small tilt of the reference lattice plane serves the purpose of improving the quality of the epitaxial layer grown on the substrate. The direction and degree of the tilt are selected according to the substrate semiconductor material and the epitaxial layer to be grown. In the on - axis orientation, the reference lattice plane selected for forming an epitaxial layer on the substrate is parallel to the substrate surface on which the epitaxial layer will be formed later, or to the main surface of the semiconductor semi - product from which the substrate is made. And the crystal axis of the reference lattice plane is aligned with the longitudinal axis C of the semiconductor substrate or semi - product. layer is later formed, or to the main surface of the semiconductor semi - product from which the substrate is made, and is parallel. And the crystal axis of the reference lattice plane is aligned with the longitudinal axis C of the semiconductor substrate or semi - product. In the case of off - axis orientation, the reference lattice plane for epitaxial growth is not parallel to the substrate surface, but is tilted by a small tilt angle corresponding to the angle between each crystal axis and the central axis C. This small tilt of the reference lattice plane serves the purpose of improving the quality of the epitaxial layer grown on the substrate. The direction and degree of the tilt are selected according to the substrate semiconductor material and the epitaxial layer to be grown. This small tilt of the reference lattice plane serves the purpose of improving the quality of the epitaxial layer grown on the substrate. The direction and degree of the tilt are selected according to the substrate semiconductor material and the epitaxial layer to be grown. layer is selected according to the substrate semiconductor material and the epitaxial layer to be grown.

[0122] To set the selected off - axis orientation degree in the semiconductor semi - product or substrate, the grown semiconductor crystal or semiconductor semi - product is spatially oriented with respect to a reference direction (e.g., the vertical direction) such that the crystal axis of the reference lattice plane is tilted by a desired tilt angle with respect to the reference direction. To set the selected off - axis orientation degree in the semiconductor semi - product or substrate, the grown semiconductor crystal or semiconductor semi - product is spatially oriented with respect to a reference direction (e.g., the vertical direction) such that the crystal axis of the reference lattice plane is tilted by a desired tilt angle with respect to the reference direction. For example, the vertical direction) so that the crystal axis of the reference lattice plane is tilted by a desired tilt angle with respect to the reference direction. The side outer surface of the semiconductor crystal spatially oriented in this way is then mechanically processed to set the following cross - section to the desired substrate diameter, and one or both tips are made flat at a right angle to the reference axis C. section to the desired substrate diameter, and one or both tips are made flat at a right angle to the reference axis C. Set on the surface. A semiconductor substrate having a desired off-axis orientation is first spatially oriented as described above and then the substrate wafer is cut in a direction transverse to the reference direction C, yielding a semiconductor crystal as grown. Alternatively, the semiconductor substrate may be cut in a direction parallel to the major surface of a semiconductor semi-finished product in which the desired off-axis orientation is already predetermined. Good quality of the epitaxial layer and the components to be subsequently processed can be achieved for a semiconductor substrate having an off-axis orientation of, for example, 4° in the SiC substrate. An example of a semiconductor substrate 300 having a 4° off-axis orientation of the bottom surface (0001) in the

[0123]

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[0001] axis is and is represented by the short arrows in the inset of FIG. 3A, which depicts the

[0001] vector components of the axis along the main plane 320a. The main flat generally

[0128]

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[0001] is inclined by an inclination angle δ of 4° (+ / -0.5°) with respect to the central axis C of the semiconductor substrate.

[0133] As described above,

[0134]

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[0001] is also reflected in the crystal orientation of the cleavage plane . For example, as depicted in FIG. 2 with respect to the on-axis orientation

[0135]

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[0139] A similar situation also occurs in the single - crystal semiconductor semi - finished product 400 with an off - axis orientation of 4° as shown in FIGS. 4A - 4B. FIG. 4A shows a side view of the semiconductor semi - finished product 400 viewed from the

[0140]

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[0001] orientations, and cleavage planes

[0143]

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[0144]

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[0001] bond Due to the 4° off-axis orientation of the crystal axes, they are inclined at 4° with respect to the central axis C.

[0145]

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[0146] FIG. 4B illustrates a further side view of the semiconductor workpiece 400 shown in FIG. 4A, where

[0147]

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[0160] However, for any of the on-axis or off-axis orientations by 4° described above, when a radial mechanical force is applied to the region where the semiconductor semi-product or the semiconductor substrate, especially where the cleavage plane intersects the respective cylindrical surfaces aligned with the symmetry axis C, it is still very likely to crack during mechanical processing, which is the case for the cleavage plane described above.

[0161]

Number

[0162] As shown in FIG. 5, during the mechanical processing of a single-crystal semiconductor semi-product (or substrate), the primary Approximately, assume that a tool used during a mechanical process such as grinding applies a mechanical force F along a line segment L ( line segment of force) on the surface of a single crystal, and that this force is transmitted radially into the single crystal. The determining factor for cleavage is the strength of the force exerted inwardly on the single crystal semiconductor semi - product, that is, the radial component F of the total force F. rad The tangential force component (F tang ) in the direction that can occur during machining can be ignored for the purpose of evaluating its influence on cleavage. The length of the line segment L is approximately the length of the contact area with each respective processing tool, such as the thickness h of the grinding wheel, as shown in FIG. 6. Actually, during machining, the mechanical force is not applied along a single line segment L of length h, but is applied to a very narrow area of the same h. This narrow area can be regarded as being formed by a series of parallel line segments. And the conditions for achieving a reduction in cleavage along the line segment according to the principles of the present invention described below can be applied to each of these individual lines. For the purpose of evaluating the influence of the radial mechanical force applied inwardly to the cleavage plane in the contact area, take into account both the contact area and the actual length of the line segment L along which the mechanical force is actually applied. The line

[0163] segment L and / or the length h of the narrow area are basically determined by the thickness h of the processing tool. During the mechanical processing of a semiconductor semi - product having an off - axis orientation in a given crystal direction as described above with reference to FIGS. 4A - 4B, or an on - axis orientation as shown in FIG. 2, for example, the radial force applied along the outer circumference of the crystal cylinder surface by a grinding wheel is such that this radial force is

[0164] Depending on the location / area along the circumference of the cylinder where the stress is applied, it may cause cracks to appear in the crystal. The following extreme situations are shown in Figures 7 and 8, which are related to the area of action of radial forces: A distinction can be made regarding the orientation of different cleavage planes relating to the region.

[0165] Figure 7 shows the structure of a wurtzite structure such as AlN, which is aligned in the single crystal direction (i.e.

[0166]

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[0176] Figure 8 is here

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[0191] From the above, semiconductor semi-products and / or substrates having off-axis orientation in the crystal direction related to the cleavage plane of the first crystal form still remain with the direction parallel to the central axis C of the semiconductor cylinder 400, and can exhibit a preferential cleavage plane of the second crystal form, for example, crossing the cleavage plane of the first form. ​This means that the cleavage plane corresponding to the first tilt angle, for example, 4° off-axis orientation, shown in FIGS. 7 to 8 for improving the quality of epitaxial growth is the most sensitive cleavage plane to cracks and fractures during mechanical processing, and the possibility of crack generation along these cleavage planes is very high. Therefore, the inventors

[0192]

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[0193]

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[0194]

[0195] ​​​​​​​​​​A method for setting the optimal orientation of the crystal structure is provided.

[0196] The principle underlying the present invention is that a first crystal axis perpendicular to a first set of cleavage planes is aligned along the center A first inclination angle is formed with respect to a plane intersecting the axis, and the second cleavage plane and the first crystal axis are inclined relative to each other. a second crystal axis perpendicular to the central axis and forming a second inclination angle with the plane intersecting the central axis, The underlying crystal structure relative to the central axis and / or side surfaces of the workpiece (or semiconductor substrate) A specific orientation of the structure is set to create a parallel cleavage plane that is symmetrically equivalent to either the first or second cleavage plane. By making each set of cleavage planes inclined to the central axis, lattice surface

[0197]

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[0198]

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[0199] The first set of cleavage planes are the cleavage lattice planes in the wurtzite structure.

[0200]

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[0201]

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[0202] At least one set of cleavage lattice planes of a given crystal form intersects the side surface of the semiconductor semi-product (or substrate) along a line segment parallel to the central axis C, and there are at least a predetermined minimum number of parallel cleavage planes per unit length. At the same time, the off-axis orientation of the reference lattice plane of 4° of the bottom surface (0001) of the AlN semiconductor maintains the benefit of bringing about the epitaxial quality of each semiconductor substrate. Intersects the side surface of the semiconductor semi-product (or substrate), and there are at least a predetermined minimum number of parallel cleavage planes per unit length. And the off-axis orientation of the bottom surface (0001) of the AlN semiconductor is 4°. Which off-axis orientation of the reference lattice plane brings about the epitaxial quality of each semiconductor substrate and maintains the benefit. Maintains the benefit.

[0203] The principle of the present invention will be described below with reference to a semiconductor having a wurtzite structure such as AlN and having an off-axis orientation of 4° in a certain direction. Nevertheless, the present invention is applicable to single-crystal semi-products and substrates of other single-crystal semiconductor materials having crystal structures other than the wurtzite structure, other preferential cleavage planes, and / or other off-axis orientations in order to improve the robustness against cleavage.

[0204]

Number

[0205] To reduce or avoid the formation of cracks along the preferential cleavage plane, the present invention sets a specific orientation of the crystal structure on the semiconductor semi-product or substrate with respect to each external surface, such as one or both of the side surface and / or the main surface of the semiconductor semi-product or substrate. In this specific orientation, regardless of the position on the outer periphery of the semiconductor semi-product or substrate, the radial force applied to the side surface of the semiconductor semi-product or substrate during mechanical processing is dispersed per unit length of the line segment L of the force to at least a predetermined minimum number of parallel cleavage planes of the given form. The condition is that it is dispersed to at least a predetermined minimum number of parallel cleavage planes of the given form. In this specific orientation, regardless of the position on the outer periphery of the semiconductor semi-product or substrate, during mechanical processing, The radial force applied to the side surface of the semiconductor semi-product or substrate is such that It is dispersed to at least a predetermined minimum number of parallel cleavage planes of the given form per unit length of the line segment L of the force. To fill, cleavage planes in a semiconductor having a wurtzite crystal structure

[0206]

Number

[0207] The minimum number of parallel cleavage planes intersecting the line segment of force per unit length is such that the radial force per cleavage plane obtains an optimal value lower than a given cleavage threshold for each form of cleavage plane, and may be estimated based on the interatomic distance in the semiconductor crystal lattice. For example, for a semiconductor wur tzite crystal structure cleavage plane

[0208]

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[0209]

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[0210]

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[0211] ​​The surface per line segment of force per unit length

[0212]

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[0213]

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[0214] Exemplary embodiments of semiconductor semi-finished products having a predetermined orientation of the underlying semiconductor crystal structure that improves the mechanical robustness along the entire circumference of the side cylindrical surface include the wurtzite-type structure and preferential cleavage planes cleavage planes

[0215]

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[0216]

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[0217] FIGS. 9A-9B schematically show a semiconductor semi-finished product 500 according to an exemplary embodiment, where , the spatial orientation of the wurtzite crystal structure with respect to the longitudinal axis C of the semiconductor semi-finished product 500 (or with respect to one or both of its tips 520a, 520b and / or the side surface 530) is in the direction by a tilt angle δ1 of the first kind (e.g., δ1 = 4° ± 0.5° as shown in FIG. 9A), and in addition to the off-axis orientation of the bottom surface (0001) in the direction

[0218]

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[0221]

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[0222]

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[0223]

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[0224]

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[0225] existing.

[0225] Therefore, the situation where the radial force applied during the grinding process, as described above with reference to FIG. 4B, acts on only one or several cleavage planes of a certain type at a certain position is the predetermined orientation described above

[0226]

Number

[0227] Furthermore, for each unit length of the line segment, at least a predetermined minimum number of intersections of each crystal form results in parallel cleavage planes, and the radial force applied per plane is lower than a given cleavage threshold specific to that particular cleavage plane. By estimating the value of the first inclination angle δ1 and / or the second inclination angle δ2, the occurrence of cracks during mechanical processing of the semiconductor semi - product 500, or of a semiconductor substrate having the same predetermined orientation can be significantly reduced in a controlled manner, or even avoided.

[0228] For example, the first inclination angle δ1 is based on the known distance between two equivalent and parallel cleavage planes of the first crystal form, for example in the embodiment shown in the figure

[0229]

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[0230]

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[0231] 10A-10B show a mechanically-modified ferroelectric material having a wurtzite structure according to a further exemplary embodiment. The present invention relates to a semi-finished semiconductor product 600 having a different predetermined orientation of the crystal structure for improved robustness. In this configuration, the semiconductor crystal structure is oriented with respect to the longitudinal axis C of the semiconductor workpiece 600. (or one or both of its tips 620a, 620b and / or side surfaces 6 30), have a predetermined spatial orientation, such that each bottom surface (0001) Only the first tilt angle δ1 (e.g., δ1=4°±0.5° as shown in FIG. 10A) shaft

[0232]

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[0001] , which is tilted in the direction of , crystal axis

[0233]

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[0234]

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[0235]

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[0236]

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[0237] [Number] are inclined by angles δ1 and δ2, respectively, with respect to the central axis C. Thus, similar to the embodiment of FIGS. 9A-9 B, the line segment L of the force on the side surface 630 parallel to the central axis C is determined by the position on the side surface 630 defined by the line segment L, and thus the position where the radial force is applied during the grinding process. Depending on the position, per unit length of the line segment L, at least the form is intersected by a predetermined minimum number of parallel cleavage planes N1 of a certain form, and the form is intersected by a predetermined minimum number of parallel cleavage planes N2 of a certain form. Also, in this case, the value of the first inclination angle δ1 and / or the second inclination angle δ2 is considered in view of the parameters of the mechanical process and / or the known cleavage threshold values for a particular type of cleavage plane, per unit length of the line segment, at least a predetermined minimum number of parallel cleavage planes intersecting in each form, that is, the radial force distributed per cleavage plane is lower than the given cleavage threshold value for each form of cleavage plane. The number of planes N1 and N2 can be estimated so as to achieve this. Alternatively

[0238] [Number] is intersected by a predetermined minimum number of parallel cleavage planes N1 of a certain form, and the form

[0239] [Number] is intersected by a predetermined minimum number of parallel cleavage planes N2 of a certain form. Also, in this case, the value of the first inclination angle δ1 and / or the second inclination angle δ2 is considered in view of the parameters of the mechanical process and / or the known cleavage threshold values for a particular type of cleavage plane, per unit length of the line segment, at least a predetermined minimum number of parallel cleavage planes intersecting in each form, that is, the radial force distributed per cleavage plane is lower than the given cleavage threshold value for each form of cleavage plane. The number of planes N1 and N2 can be estimated so as to achieve this. Alternatively one or both of the first inclination angle δ1 and the second inclination angle δ2 may be determined empirically and / or the known cleavage threshold values for a particular type of cleavage plane, per unit length of the line segment, at least a predetermined minimum number of parallel cleavage planes intersecting in each form, that is, the radial force distributed per cleavage plane is lower than the given cleavage threshold value for each form of cleavage plane. The number of planes N1 and N2 can be estimated so as to achieve this. Alternatively at least a predetermined minimum number of parallel cleavage planes intersecting in each form, that is, the radial force distributed per cleavage plane is lower than the given cleavage threshold value for each form of cleavage plane. The number of planes N1 and N2 can be estimated so as to achieve this. Alternatively per cleavage plane is lower than the given cleavage threshold value for each form of cleavage plane. The number of planes N1 and N2 can be estimated so as to achieve this. Alternatively than the given cleavage threshold value for each form of cleavage plane. The number of planes N1 and N2 can be estimated so as to achieve this. Alternatively either or both of the first inclination angle δ1 and the second inclination angle δ2 may be determined empirically as well.

[0240] Both of the exemplary embodiments of FIGS. 9A-9B and FIGS. 10A-10B reduce the occurrence of cracks To reduce or even eliminate it, at positions on the entire circumference of the semiconductor semi-finished product where an external mechanical force is applied Regardless, the external mechanical force applied to the side surface of the semiconductor semi-finished product is a complex number of equivalent and parallel cleavage planes that are prone to cleavage, for example, in a wurtzite structure And

[0241]

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[0242]

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[0243] A similar improvement in mechanical robustness against cleavage is achieved in a semiconductor substrate or wafer having the same spatial orientation as the semiconductor crystal structure described above with reference to FIGS. 9A - 9B and FIGS. 10A - 10 B In

[0244] A predetermined orientation of the semiconductor crystal structure for improving mechanical robustness may be set in the semiconductor semi-finished product by the method described below By

[0245] In the as-grown semiconductor crystal obtained after crystal growth and / or after the first rough mechanical treatment (pre-treated semiconductor crystal), the lattice planes and the reference surfaces (e.g., one of the processed main surfaces or the cylindrical surface) are not yet aligned with each other according to the required exact orientation as in the final semiconductor semi-finished product For this reason, at the beginning of the mechanical treatment, the as-grown semiconductor crystal (or pre-treated semiconductor crystal) is aligned on its main surface to enable high-precision setting of the crystal orientation for the mechanical treatment One or the cylindrical surface With each other

[0246] For this reason, at the start of the mechanical treatment, the as-grown semiconductor crystal (or pre-treated semiconductor crystal) is, for the purpose of enabling high-precision setting of the crystal orientation for the mechanical treatment, on its main surface Of the semiconductor crystal One (e.g., in the case of the wurtzite structure, the (0001) plane or

[0247]

Number

[0248] For example, as shown in FIGS. 4A-4B, to set an off-axis orientation of 4° of the reference lattice plane in a certain crystal direction, in the first step, the as-grown crystal orientation is adjusted with a goniometer in the X-ray apparatus, and the bottom surface (0001) (or

[0249]

Number

[0001] axis is aligned along the C axis).

[0250] In a subsequent step, to obtain a desired off-axis orientation of δ1 of the bottom surface for high-quality epitaxy of a future semiconductor substrate, the as-grown semiconductor crystal (or pre-treated semiconductor single crystal) so oriented is tilted by a first tilt angle δ1 (e.g., 4° + / - 0.5°) using a goniometer in a first crystal direction, e.g., the direction in the wurtzite structure.

[0251]

Number

[0001] axis of the bottom surface and the future cylindrical axis C is δ1 = 4° (+ / - 0.5°).

[0252] Thereafter, the outer diameter of the cylinder is set to the diameter of the future substrate, for example, by a grinding process. This is good. The diameter setting process is one of the most important steps regarding the occurrence of cracks, as described above. During this setting process, the orientation of the grid plane with respect to the cylinder surface, which was previously adjusted by the goniometer, is accurately transferred. Furthermore, a main or sub-orientation flat and / or notch can be ground during this process step. The desired orientation of the grid plane with respect to the cylinder surface is then confirmed / controlled using an X-ray device before further processing.

[0253] After processing the outer diameter and / or orientation flat, and controlling the desired orientation of the grid plane with respect to the cylinder surface, a process for defining the main surface of the semiconductor single crystal is performed, thereby obtaining a final semiconductor semi-finished product having an outer shape similar to that shown in FIG. 1.

[0254] To set a predetermined spatial orientation of the crystal structure that improves the mechanical robustness along two or more types of cleavage planes, such as the predetermined orientation depicted in FIGS. 9A - 9B or FIGS. 10A - 10B, the raw semiconductor crystal (or pre-treated semiconductor crystal) is subjected to a process for setting a desired predetermined orientation that includes orienting the raw (or pre-treated) SiC crystal spatially by using any of the following orientation process procedures. Each step of the orientation process procedure preferably ensures an accurate orientation at each step of the process procedure. It is carried out using a goniometer and a commercially available X-ray apparatus to achieve

[0255] According to a first orientation process procedure for setting a predetermined orientation of a semiconductor crystal structure within a semiconductor semi-finished product 500 as shown in FIGS. 9A-9B, an unprocessed or pre-treated semiconductor crystal is spatially oriented with respect to an alignment direction, which is preferably selected to be parallel to the direction of the central axis C and the cylindrical side surface of the final semiconductor semi-finished product 500 as follows First, the selected reference lattice plane, i.e., the bottom surface in the illustrated embodiment, is aligned along the alignment direction so that the main crystal axis of the bottom surface forms an initial orientation substantially perpendicular to the alignment axis. In a subsequent step, the semiconductor crystal is tilted by an amount δ1 in a direction such that the direction of a selected first crystal axis associated with a set of parallel cleavage planes of the first crystal form, e.g., in a wurtzite structure is oriented in the direction of the crystal axis associated with the cleavage plane. Thereby, the bottom surface is tilted by a first tilt angle δ1 in the direction of the crystal axis associated with the cleavage plane. Then, the set of the first cleavage planes

[0256]

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[0260]

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[0266] According to an alternative second orientation process procedure for setting a predetermined orientation of a semiconductor crystal structure within a semiconductor semi - product 600 as shown in FIGS. 10A - 10B, the reference lattice plane (e.g., the bottom surface) similarly, first, the direction of the central axis C (which corresponds to the direction of the future cylindrical side surface 630) is It is oriented to have an initial orientation perpendicular to (). The bottom surface is then from the initial orientation to the first orientation, to the first crystal direction (e.g., in FIG. 10A

[0267]

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[0268]

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[0269]

Number

[0270] In the first and second orientation process procedures described above, the value of the first tilt angle is preferably 4° ± 0.5° in the case of Si C semiconductor material, where the error of ±0.5° still allows to obtain the desired improvement in the epitaxy of each semiconductor substrate and is related to the allowable tolerance of the value of the first tilt angle. The value of the second tilt angle δ2 is preferably is 0.023°. However, any value within the range of [0.015°; 0.153°] that can achieve the desired effect of the orientation on mechanical robustness can be used as the second tilt angle δ2 and. Specifically, as described above, the value of the first and / or second tilt angle is based on the distance between equivalent and parallel cleavage planes of each form where the cleavage effect should be minimized and the unit of the line segment of force, where the applied force per unit area is less than the above critical cleavage threshold It may be estimated with reference to at least a predetermined minimum number of intersecting cleavage planes per length.

[0271] In the case of AlN semiconductor material, the values of both the first and second tilt angles may be set to a smaller angle, for example 0.042°.

[0272] According to a third orientation process procedure for setting a further predetermined orientation to improve mechanical robustness the reference lattice plane (e.g., the bottom surface) is first aligned to an initial orientation perpendicular to the direction of the central axis C, i.e., the direction of the future cylindrical side surface. The bottom surface is then rotated by a predetermined rotation angle in the clockwise direction about this initial direction. The predetermined rotation angle is preferably 0.33°, but any value within the range [0.22°; 2.19°] may be used. In a subsequent step, the bottom surface is further tilted by an inclination angle δ3 in the direction of a first crystal direction, for example, the wurtzite structure direction. The inclination angle δ3 is preferably equal to 4° (with a tolerance of ±0.5°) in the case of SiC semiconductors. However, depending on the type of semiconductor material, the underlying crystal structure, and / or the off-axis orientation that gives the best epitaxial results on the final substrate, other values of the inclination angle δ3 may be used. Alternatively, a fourth orientation process procedure may be used, where the reference lattice plane (e.g., the bottom surface) is also first aligned to an initial orientation perpendicular to the direction of the central axis C, i.e., the direction of the future cylindrical side surface. Then the bottom surface is rotated counterclockwise about this initial direction

[0273]

Number

[0274] Alternatively, a fourth orientation process procedure may be used, where the reference lattice plane (for example the bottom surface) is also first aligned to an initial orientation perpendicular to the direction of the central axis C, i.e., the direction of the future cylindrical side surface. Then the bottom surface is rotated counterclockwise about this initial direction about this initial direction It is rotated in the circumferential direction by a predetermined rotation angle. The predetermined rotation angle is preferably 0.33°, but can be any value within the range [0.22°; 2.1 9°] in order to obtain the desired effect of the orientation on the mechanical robustness. In a subsequent step, the bottom surface is

[0275]

Number

[0276] After the crystal direction of the raw semiconductor crystal (or pre-treated semiconductor crystal) has been aligned by any of the orientation process procedures described above, one or more external reference surfaces of the final 4H-Si semi-finished product may be machined with reference to the alignment axis C. For example, a side surface that is at least partially curved may be machined in a direction parallel to the alignment axis C on the oriented raw or pre-treated semiconductor crystal. Additionally or alternatively, one or two main surfaces of the final 4H-Si semi-finished product may be machined in a direction orthogonal to the C axis.

[0277] Thus, a predetermined orientation of a reference lattice plane such as the bottom surface (0001) or other lattice planes of the semiconductor structure can be accurately set with respect to at least one reference surface of the semiconductor semi-finished product, i.e., one or both of the curved side surfaces and / or

[0278] The diameter of the curved side surface is the intended It may be set to substantially correspond to the diameter. Specifically, the technology of the present invention may be applied to improve the mechanical robustness of semiconductor semi-finished products and semiconductor substrates obtained therefrom. .

[0279] Furthermore, the technology of the present invention may be applied to improve the mechanical robustness of semiconductor semi-finished products or unprocessed semiconductor crystals of a height preselected to yield a desired number of semiconductor substrate slices.

[0280] As described above, the semiconductor semi-finished product and / or the substrate can be obtained either in an on-axis or off-axis orientation, depending on the type and use of the semiconductor material. In the case of a semiconductor material having a wurtzite structure and an on-axis orientation, since the reference lattice plane is perpendicular to the central axis C, all cleavage planes crossing the reference lattice plane intersect at right angles with the side surfaces of the semiconductor semi-finished product or the substrate. In this case, all the cleavage planes shown in FIG. 2 become important with respect to cleavage. To improve the mechanical robustness against cleavage, a predetermined orientation of the crystal structure is such that the reference lattice plane is sequentially tilted by a predetermined tilt angle that enables minimizing cleavage in two different crystal directions related to two different forms of preferential cleavage planes, for example, directions perpendicular to each other, so that the grown semiconductor crystal having an on-axis orientation or the semiconductor substrate may be set in space. Then, each cleavage plane is inclined with respect to a line segment along the side surface of the semiconductor crystal or the substrate, and the external radial force applied along that line segment satisfies the condition that it is dispersed over at least a minimum number of parallel cleavage planes per unit length. In the case of an AlN semiconductor material having a wurtzite structure, for each form of cleavage plane At least 1.000 minimum number of parallel cleavages per unit length intersecting the cylindrical side surface The conditions for obtaining the plane can be realized by the following spatial orientation process.

[0281] In the first step, the bottom surface (reference lattice plane) is first oriented so as to be perpendicular to the alignment axis (corresponding to the central axis C of the final semi - product or the substrate). The bottom surface is then direction

[0282]

Number

[0283]

Number

[0284]

Number

[0285] Still, the principle of the present invention can be applied to semi - products and / or substrates made of other semiconductor materials, such as any of the semiconductor materials listed in Table 1 below, and / or having a crystal structure other than those described above, in order to improve the robustness along the direction of the important cleavage plane. and / or applicable to semi - products and / or substrates having a crystal structure other than those described above. and / or applicable to semi - products and / or substrates having a crystal structure other than those described above. It may be applicable.

[0286]

Table 1

[0287] A semiconductor semi - product with a predetermined orientation of the semiconductor lattice set to improve mechanical robustness is Thereafter, a generally known wafer separation process such as multi-wire sawing using a diamond-based slurry, spark etching using a wire, or other alternative separation processes can be used to divide the substrate wafer. This predetermined orientation of the semiconductor lattice can be transferred to the substrate wafer by reference to any of the reference surfaces of the semiconductor semi-finished product during the separation process.

[0288] Alternative exemplary embodiments for supporting the semiconductor semi-finished product during the wafer separation process and transferring the predetermined orientation of the underlying semiconductor lattice to the semiconductor

[0289] substrate are shown in FIGS. 11 and 12. FIG. 11 shows a configuration in which the crystal orientation of a single-crystal semiconductor semi-finished product 700, such as any of the single-crystal semiconductor semi-finished products 500 and 600 described above, is transferred to a semiconductor substrate 740 via a cylindrical side surface 730. In the case of a separation process in which the support of the single-crystal semiconductor semi-finished product to be processed 700 is implemented via the support of the cylindrical side surface 730, the cylindrical side surface 730 requires accurate alignment with respect to the orientation of the semiconductor lattice plane. In this separation method, the orientation of the lattice plane is thus

[0290] transferred through their respective alignments with respect to the cylindrical side surface 730. FIG. 12 shows a configuration in which the crystal semiconductor semi-finished product 700 is supported by one of the main surfaces 720b. In the case of a separation process in which the support of the single-crystal semiconductor semi-finished product to be processed is implemented via the support of the main surface, the main surface requires accurate alignment with respect to the orientation of the lattice plane. In these separation methods, the orientation​ The orientation is preferably measured using X-ray radiography and set using a goniometer and is accurately transferred, for example, during a mechanical process using a grinding process. In order to accurately transfer a predetermined orientation of a semiconductor lattice plane to a substrate wafer 740, one of the following basic conditions must be satisfied by a single-crystalline semiconductor semi-finished product 700: At least one of both main surfaces 720a and / or 720b (reference surfaces) is oriented perpendicular to the cylindrical side surface 730. That is, the lattice orientation is accurately transferred through one of the reference surfaces; Both main surfaces 720a and 720b (reference surfaces) are oriented perpendicular to the cylindrical side surface 730. That is, the lattice orientation can be accurately transferred through both reference surfaces.

[0291] FIGS. 13A and 13B depict a finished semiconductor substrate 800 with a predetermined semiconductor crystal orientation set for improving the mechanical robustness of the substrate against cleavage, obtained after using any of the separation processes described above from a semiconductor semi-finished product with a predetermined orientation set as described with reference to FIGS. 9A - 9B of the semiconductor semi-finished product 500.

[0292] When a raw substrate semiconductor 740 is manufactured from a single-crystalline semiconductor semi-finished product 700 such as the semiconductor crystal semi-finished products 500 and 600, where a desired predetermined orientation has already been set as described above with reference to FIGS. 9A - 9B and 10A - 10B, the predetermined orientation of the semiconductor crystal lattice is already set with respect to at least one reference surface of the semiconductor semi-finished product 700, for example, the side cylindrical surface 730 and / or one or both of the main surfaces 720a and 720b. This relative orientation of the semiconductor crystal lattice is then, as shown in FIGS. 11 and 12, then ​​​​​​​​​​​​​​ By using one of the reference surfaces, it is transferred to the raw semiconductor substrate 740 during slicing of the semiconductor semi-finished product 700. For example, in the configuration shown in FIG. 11, the reference surface for transferring the crystal orientation is the side surface 730 of the semiconductor semi-finished product 700. In the configuration shown in FIG. 12, one of the main surfaces 720a and 720b of the semiconductor semi-finished product 700 is used as the reference surface. After slicing, the crystal orientation in the raw semiconductor substrate 740 is then determined using a goniometer and X-ray measurement to determine whether the desired orientation according to the principles of the present invention has been accurately transferred. If a deviation from the desired orientation is identified, the process of setting a predetermined orientation of the semiconductor crystal structure in the semiconductor substrate 800 may include applying a planarization process involving pre-alignment with the raw semiconductor substrate 740 to correct the orientation of the semiconductor crystal lattice with respect to the main surface and / or side surface of the semiconductor substrate. In summary, the present invention provides an optimal orientation of the preferential cleavage plane with respect to the side surface and / or one or both main surfaces of the semiconductor semi-finished product or semiconductor substrate such that the radial mechanical force applied to a given area during mechanical processing is always distributed over at least a predetermined minimum number of preferential cleavage planes, regardless of the position around the semiconductor semi-finished product or semiconductor substrate to which the mechanical force is applied. This makes it possible to reduce the occurrence of cracking during mechanical processing of the semiconductor single crystal and / or semiconductor substrate. As a result, through this optimal orientation of the semiconductor crystal structure, without degrading the quality of future substrate epitaxy, and without significantly increasing the cost and / or time of each mechanical process.

[0293] After slicing, the crystal orientation in the raw semiconductor substrate 740 is then determined using a goniometer and X-ray measurement to determine whether the desired orientation according to the principles of the present invention has been accurately transferred. If a deviation from the desired orientation is identified, the process of setting a predetermined orientation of the semiconductor crystal structure in the semiconductor substrate 800 may include applying a planarization process involving pre-alignment with the raw semiconductor substrate 740 to correct the orientation of the semiconductor crystal lattice with respect to the main surface and / or side surface of the semiconductor substrate. After slicing, the crystal orientation in the raw semiconductor substrate 740 is then determined using a goniometer and X-ray measurement to determine whether the desired orientation according to the principles of the present invention has been accurately transferred. If a deviation from the desired orientation is identified, the process of setting a predetermined orientation of the semiconductor crystal structure in the semiconductor substrate 800 may include applying a planarization process involving pre-alignment with the raw semiconductor substrate 740 to correct the orientation of the semiconductor crystal lattice with respect to the main surface and / or side surface of the semiconductor substrate. If a deviation from the desired orientation is identified, the process of setting a predetermined orientation of the semiconductor crystal structure in the semiconductor substrate 800 may include applying a planarization process involving pre-alignment with the raw semiconductor substrate 740 to correct the orientation of the semiconductor crystal lattice with respect to the main surface and / or side surface of the semiconductor substrate. If a deviation from the desired orientation is identified, the process of setting a predetermined orientation of the semiconductor crystal structure in the semiconductor substrate 800 may include applying a planarization process involving pre-alignment with the raw semiconductor substrate 740 to correct the orientation of the semiconductor crystal lattice with respect to the main surface and / or side surface of the semiconductor substrate. If a deviation from the desired orientation is identified, the process of setting a predetermined orientation of the semiconductor crystal structure in the semiconductor substrate 800 may include applying a planarization process involving pre-alignment with the raw semiconductor substrate 740 to correct the orientation of the semiconductor crystal lattice with respect to the main surface and / or side surface of the semiconductor substrate. If a deviation from the desired orientation is identified, the process of setting a predetermined orientation of the semiconductor crystal structure in the semiconductor substrate 800 may include applying a planarization process involving pre-alignment with the raw semiconductor substrate 740 to correct the orientation of the semiconductor crystal lattice with respect to the main surface and / or side surface of the semiconductor substrate.

[0294] In summary, the present invention provides an optimal orientation of the preferential cleavage plane with respect to the side surface and / or one or both main surfaces of the semiconductor semi-finished product or semiconductor substrate such that the radial mechanical force applied to a given area during mechanical processing is always distributed over at least a predetermined minimum number of preferential cleavage planes, regardless of the position around the semiconductor semi-finished product or semiconductor substrate to which the mechanical force is applied. This makes it possible to reduce the occurrence of cracking during mechanical processing of the semiconductor single crystal and / or semiconductor substrate. In summary, the present invention provides an optimal orientation of the preferential cleavage plane with respect to the side surface and / or one or both main surfaces of the semiconductor semi-finished product or semiconductor substrate such that the radial mechanical force applied to a given area during mechanical processing is always distributed over at least a predetermined minimum number of preferential cleavage planes, regardless of the position around the semiconductor semi-finished product or semiconductor substrate to which the mechanical force is applied. This makes it possible to reduce the occurrence of cracking during mechanical processing of the semiconductor single crystal and / or semiconductor substrate. In summary, the present invention provides an optimal orientation of the preferential cleavage plane with respect to the side surface and / or one or both main surfaces of the semiconductor semi-finished product or semiconductor substrate such that the radial mechanical force applied to a given area during mechanical processing is always distributed over at least a predetermined minimum number of preferential cleavage planes, regardless of the position around the semiconductor semi-finished product or semiconductor substrate to which the mechanical force is applied. This makes it possible to reduce the occurrence of cracking during mechanical processing of the semiconductor single crystal and / or semiconductor substrate. In summary, the present invention provides an optimal orientation of the preferential cleavage plane with respect to the side surface and / or one or both main surfaces of the semiconductor semi-finished product or semiconductor substrate such that the radial mechanical force applied to a given area during mechanical processing is always distributed over at least a predetermined minimum number of preferential cleavage planes, regardless of the position around the semiconductor semi-finished product or semiconductor substrate to which the mechanical force is applied. This makes it possible to reduce the occurrence of cracking during mechanical processing of the semiconductor single crystal and / or semiconductor substrate. In summary, the present invention provides an optimal orientation of the preferential cleavage plane with respect to the side surface and / or one or both main surfaces of the semiconductor semi-finished product or semiconductor substrate such that the radial mechanical force applied to a given area during mechanical processing is always distributed over at least a predetermined minimum number of preferential cleavage planes, regardless of the position around the semiconductor semi-finished product or semiconductor substrate to which the mechanical force is applied. This makes it possible to reduce the occurrence of cracking during mechanical processing of the semiconductor single crystal and / or semiconductor substrate. In summary, the present invention provides an optimal orientation of the preferential cleavage plane with respect to the side surface and / or one or both main surfaces of the semiconductor semi-finished product or semiconductor substrate such that the radial mechanical force applied to a given area during mechanical processing is always distributed over at least a predetermined minimum number of preferential cleavage planes, regardless of the position around the semiconductor semi-finished product or semiconductor substrate to which the mechanical force is applied. This makes it possible to reduce the occurrence of cracking during mechanical processing of the semiconductor single crystal and / or semiconductor substrate.

[0295] As a result, through this optimal orientation of the semiconductor crystal structure, without degrading the quality of future substrate epitaxy, and without significantly increasing the cost and / or time of each mechanical process. As a result, through this optimal orientation of the semiconductor crystal structure, without degrading the quality of future substrate epitaxy, and without significantly increasing the cost and / or time of each mechanical process. Higher mechanical robustness during mechanical processing of the bulk semiconductor crystal and the semiconductor substrate without significant increase, thus enabling higher yield of single crystal semi-finished and final products. It is achievable.

[0296] Certain features of the above exemplary embodiments have been described using terms such as "downward", "upper", "bottom", and "vertical direction", but these terms are merely for the purpose of facilitating the description of the respective features and their relative orientations within the semiconductor single crystal and / or the semiconductor substrate, and should not be construed as limiting the claimed invention or its components to a specific spatial orientation.

Description of Reference Numerals

[0297] C Geometric longitudinal axis L Line segment h Height of the grinding wheel, length of the line segment L 100 AlN semi-finished product 110 Orientation flat (OF) 120a, 120b Upper and lower main surfaces of the cylinder 130 Side cylinder surface 200 AlN semi-finished product with on-axis orientation (prior art) 220 Main surface 230 Cylinder side surface 240 Grinding wheel 300 AlN substrate with 4° off-axis orientation (prior art) 320a, 320b Upper and lower main surfaces of the cylinder 330 Cylinder side surface 400 AlN semi-finished product with 4° off-axis orientation (prior art) 420a, 420b Upper and lower main surfaces of the cylinder 430 Cylinder side surface 500 AlN semi-finished product 520a, 520b Upper and lower main surfaces of the cylinder 530 Cylindrical side surface 600 AlN semi-finished product 620a, 620b Upper and lower main surfaces of the cylinder 630 Cylindrical side surface 700 Single-crystal semiconductor semi-finished product 710 Support 720a, 720b, 730 Main surface and side surface 740 Substrate wafer 800 Finished semiconductor substrate 820a, 820b Upper and lower main surfaces of the substrate 830 Cylindrical side surface of the substrate

Claims

1. A single-crystal semiconductor semi-finished product or single-crystal semiconductor substrate having improved mechanical robustness against cleavage, wherein the semiconductor semi-finished product or substrate has a central axis and a side surface that is at least partially curved and parallel to the central axis, The crystal structure of the single-crystal semiconductor is oriented in a predetermined orientation with respect to the central axis and the at least partially curved side surfaces, and in the predetermined orientation, A first crystal axis perpendicular to the first set of cleavage planes forms a first inclination angle with a plane that intersects the central axis. A second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane that intersects the central axis, thereby inclining each set of parallel cleavage planes that are symmetrically equivalent to either the first or second cleavage plane with respect to the central axis. It is characterized by, The semiconductor semi-finished product or substrate is a single-crystal semiconductor semi-finished product or single-crystal semiconductor substrate made from a semiconductor material having a wurtzite-type structure.

2. The single-crystal semiconductor semi-finished product or substrate according to claim 1, wherein the first and second inclination angles are selected such that each set of first and second cleavage planes intersects the at least partially curved side surface along a line segment parallel to the central axis, and there are at least a predetermined minimum number of parallel cleavage planes per unit length of the line segment.

3. The predetermined minimum number of parallel cleavage planes per unit length is at least 1,000 planes per millimeter of the line segment length, and / or The single-crystal semiconductor semi-finished product or substrate according to claim 2, wherein the central axis is the axis of symmetry of the cylindrical surface defined by the curved portion of the at least partially curved side surface.

4. A single-crystal semiconductor semi-finished product or substrate according to any one of claims 1 to 3, wherein the first inclination angle is estimated based on the distance between the first cleavage planes perpendicular to the first crystal axis, and / or the second inclination angle is estimated based on the distance between the second cleavage planes perpendicular to the second crystal axis.

5. The single-crystal semiconductor semi-finished product or substrate according to any one of claims 1 to 4, wherein the first crystal axis and the first tilt angle are further selected based on the requirements for epitaxial growth on the substrate made of the single-crystal semiconductor.

6. Further comprising first and second main surfaces, The first and second principal surfaces are perpendicular to at least the partially curved lateral surface, and / or one or both of the first and second principal surfaces are perpendicular to the central axis, and / or The single-crystal semiconductor semi-finished product or substrate according to any one of claims 1 to 5, wherein the at least partially curved side surface has a curved portion defining a cylindrical surface, and the central axis is its axis of symmetry.

7. The single-crystal semiconductor semi-finished product or substrate according to any one of claims 1 to 6, wherein the semiconductor semi-finished product or semiconductor substrate is made from a semiconductor material selected from the group of type III-V semiconductors, the group includes SiC semiconductors, AIN semiconductors, and GaN semiconductors.

8. The first crystal axis in the wurtzite-type structure [Math 1] shaft or the [Math 2] It is one of the crystal axes that is symmetrically equivalent to the axis, and / or The first inclination angle is 4° and has a tolerance of ±0.5°, and / or The single-crystal semiconductor semi-finished product or substrate according to claim 1, wherein the second inclination angle is a value selected from the interval [0.015°; 0.153°], or preferably 0.023°.

9. A method for manufacturing a single-crystal semiconductor semi-finished product or single-crystal semiconductor substrate having improved mechanical robustness against cleavage, wherein the single-crystal semiconductor semi-finished product or substrate has a central axis and at least partially curved side surfaces parallel to the central axis, and the method is The process includes setting the orientation of a semiconductor crystal structure in a predetermined orientation with respect to the central axis and the at least partially curved side surface, wherein in the predetermined orientation, A first crystal axis perpendicular to the first set of cleavage planes forms a first inclination angle with a plane that intersects the central axis. A second crystal axis perpendicular to the second set of cleavage planes and the first crystal axis forms a second inclination angle with the plane that intersects the central axis, and thereafter, each set of parallel cleavage planes that is symmetrically equivalent to either the first or second cleavage plane is inclined with respect to the central axis. The semiconductor crystal structure is a wurtzite-type structure, according to the method.

10. The first and second inclination angles are selected such that each set of first and second cleavage planes intersects the at least partially curved lateral surface along a line segment parallel to the central axis, and there are at least a predetermined minimum number of parallel cleavage planes per unit length of the line segment. The method according to claim 9.

11. The predetermined minimum number of parallel cleavage planes per unit length is at least 1,000 planes per millimeter of the line segment length, and / or The central axis is the axis of symmetry of the cylindrical surface defined by the curved portion of the at least partially curved side surface. The method according to claim 10.

12. The method further includes estimating the first inclination angle based on the distance between the first cleavage planes perpendicular to the first crystal axis, and / or estimating the second inclination angle based on the distance between the second cleavage planes perpendicular to the second crystal axis, such that the first inclination angle yields at least a predetermined minimum number of parallel cleavage planes per unit length. The method according to any one of claims 9 to 11.

13. The first crystal axis and the first tilt angle are further selected based on the requirements for epitaxial growth on the substrate made of the single-crystal semiconductor. The method according to any one of claims 9 to 12.

14. The first crystal axis in the wurtzite-type structure [Math 3] shaft or the [Math 4] It is one of the crystal axes that is symmetrically equivalent to the axis. The method according to claim 9.

15. The process for setting the predetermined orientation of the semiconductor crystal structure with respect to the central axis of the semiconductor semi-finished product is, The semiconductor crystal structure is spatially oriented with respect to the alignment axis so as to achieve the predetermined orientation of the semiconductor crystal structure with respect to a plane transverse to the alignment axis, A side surface that is substantially parallel to the alignment axis and at least partially curved, and At least one surface substantially perpendicular to the alignment axis, The process includes machining the outer surface of the spatially oriented semiconductor crystal structure with reference to the alignment axis so as to form at least one of the following: The method according to any one of claims 9 to 14, wherein the alignment axis of the spatially oriented semiconductor crystal structure is selected to be parallel to the central axis of the semiconductor semi-finished product.

16. The process for spatially oriented the semiconductor crystal structure with respect to the alignment axis is, The process involves aligning the principal crystal axis of a selected reference lattice plane along the alignment direction, such that the reference lattice plane traverses the set of first and second cleavage planes. The method according to claim 15, comprising tilting the reference lattice plane in a first direction by a first inclination angle, wherein the first direction corresponds to a first crystal axis perpendicular to the set of first cleavage planes, so that the set of first cleavage planes is tilted by a first inclination angle with respect to the alignment axis, and the set of second cleavage planes remains parallel to the alignment axis.

17. The process for spatially oriented the semiconductor crystal structure with respect to the alignment axis in the predetermined orientation is, The method according to claim 16, further comprising tilting the reference lattice plane in a second direction by a second inclination angle, wherein the second direction corresponds to the second crystal axis, and thereby the set of second cleavage planes is tilted by a second inclination angle with respect to the alignment axis.

18. The first crystal axis in the wurtzite-type structure [Math 5] shaft or the [Math 6] It is one of the crystal axes that is symmetrically equivalent to the axis, the first inclination angle is 4°, and has a tolerance of ±0.5°, The second inclination angle is a value selected from the intervals [0.015°; 0.153°], or preferably 0.023°. The method according to any one of claims 15 to 17.

19. The process for spatially oriented the semiconductor crystal structure with respect to the alignment axis is, The process involves aligning the principal crystal axis of a selected reference lattice plane along the alignment direction, such that the reference lattice plane intersects the cleavage plane of the first crystal form. The aforementioned reference grid plane is rotated by a predetermined rotation angle in a clockwise or counterclockwise direction around the alignment direction, The method according to claim 15, comprising tilting the rotated reference lattice plane in a first direction by a given inclination angle such that the first direction corresponds to the crystal axes of the set of parallel cleavage planes of the first crystal form.

20. The reference grid plane is the bottom plane (0001), The first crystal axis in the wurtzite-type structure [Number 7] shaft or the [Number 8] It is one of the crystal axes that is symmetrically equivalent to the axis, the first inclination angle is 4°, and has a tolerance of ±0.5°, The method according to claim 19, wherein the predetermined rotation angle is 0.33° or a value within the range [0.22°, 2.19°].

21. The method according to any one of claims 9 to 20, wherein the semiconductor semi-finished product is made from a semiconductor material selected from the group of type III-V semiconductors, the group includes SiC semiconductors, AIN semiconductors, and GaN semiconductors.

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