Semiconductor optical device and method of manufacturing the same, and sensor

Abstract

To provide a semiconductor optical device that can facilitate management of the supply amount of a joint member and also has improved reliability.SOLUTION: A semiconductor optical device 1 comprises a substrate 8 including a die pad 10, a semiconductor optical element 30, and a joint member 40. A first edge 11 and a second edge 12 of the die pad 10 extend along a longer direction of the semiconductor optical element 30. The semiconductor optical element 30 overlaps with a principal surface 10a, a first recessed part 16 formed at the first edge 11, and a second recessed part 17 formed at the second edge 12 in plan view of the principal surface 10a. The joint member 40 is provided on the principal surface 10a and in the first recessed part 16 and second recessed part 17.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a semiconductor optical device, a method for manufacturing the same, and a sensor.

Background Art

[0002] Japanese Unexamined Patent Application Publication No. 2013-225690 (Patent Document 1) discloses a semiconductor light-emitting device including an electrode and an LED chip. The electrode includes a die bonding pad and an extension portion. The outer edge of the die bonding pad is located inward of the outer edge of the LED chip. The extension portion extends outward of the LED chip from the die bonding pad. The LED chip is bonded to the die bonding pad using silver paste.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0004] An object of the present disclosure is to provide a semiconductor optical device, a method for manufacturing the same, and a sensor that can facilitate the management of the supply amount of a bonding member and have improved reliability when the semiconductor optical element has an elongated shape in plan view.

[0005] The semiconductor optical device of the present disclosure includes a substrate, a semiconductor optical element, and a bonding member. The substrate includes an insulating substrate and a die pad disposed on the insulating substrate. The die pad includes a first edge, a second edge, a third edge, and a fourth edge, and has a main surface defined by the first edge, the second edge, the third edge, and the fourth edge. The first edge and the second edge each extend along the longitudinal direction of the semiconductor optical element in a plan view of the main surface. The third edge and the fourth edge each extend along the short-side direction of the semiconductor optical element in a plan view of the main surface and are connected to the first edge and the second edge. A first recess recessed toward the second edge is formed in the first edge. A second recess recessed toward the first edge is formed in the second edge. The semiconductor optical element is bonded to the main surface of the die pad using the bonding member, and in a plan view of the main surface, the semiconductor optical element overlaps the main surface, the first recess, and the second recess. The bonding member is provided on the main surface, in the first recess, and in the second recess.

[0006] The manufacturing method of the semiconductor optical device of the present disclosure includes supplying a bonding member onto a substrate. The substrate includes an insulating substrate and a die pad disposed on the insulating substrate. The die pad includes a first edge, a second edge, a third edge, and a fourth edge, and has a main surface defined by the first edge, the second edge, the third edge, and the fourth edge. The third edge and the fourth edge are each connected to the first edge and the second edge. A first recess recessed toward the second edge is formed in the first edge. A second recess recessed toward the first edge is formed in the second edge. The bonding member is provided on the main surface, in the first recess, and in the second recess. The manufacturing method of the semiconductor optical device of the present disclosure includes placing a semiconductor optical element on the bonding member. In a plan view of the main surface, the semiconductor optical element overlaps the main surface, the first recess, and the second recess. The first edge and the second edge each extend along the longitudinal direction of the semiconductor optical element in a plan view of the main surface. The third edge and the fourth edge each extend along the short-side direction of the semiconductor optical element in a plan view of the main surface. The manufacturing method of the semiconductor optical device of the present disclosure includes curing the bonding member and bonding the semiconductor optical element to the main surface of the die pad using the bonding member.

[0007] The sensor of the present disclosure includes a semiconductor optical device of the present disclosure and a light receiving element that receives light emitted from a semiconductor light emitting element included in the semiconductor optical device.

Brief Description of Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

[0009] Details of embodiments of the present disclosure will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated. At least some of the configurations of the embodiments described below may be arbitrarily combined.

[0010] With reference to FIGS. 1 to 4, a semiconductor optical device 1 according to an embodiment of the present disclosure will be described. The semiconductor optical device 1 includes a substrate 8, a semiconductor optical element 30, a bonding member 40, a conductive wire 50, a resist 52, and a sealing member 55.

[0011] Referring to FIGS. 1 to 4, the substrate 8 includes an insulating substrate 9, a die pad 10, connection electrodes 21, 22, 23, 24, a bonding pad 25, and terminal electrodes 27, 28.

[0012] The insulating substrate 9 is formed of an electrical insulating material such as glass epoxy. The insulating substrate 9 has a main surface 9a and a main surface 9b on the opposite side of the main surface 9a. The main surface 9a and the main surface 9b each extend in a first direction (x direction) and a second direction (y direction) perpendicular to the x direction. The thickness direction of the insulating substrate 9 is a third direction (z direction) perpendicular to the x direction and the y direction. The main surface 9a and the main surface 9b are both end faces of the insulating substrate 9 in the thickness direction (z direction). Concave portions 9r are provided at the four corners of the insulating substrate 9. The concave portions 9r penetrate the insulating substrate 9 in the thickness direction (z direction) of the insulating substrate 9 and are connected to the main surface 9a and the main surface 9b.

[0013] The die pad 10 is disposed on the main surface 9a of the insulating substrate 9. The die pad 10 has a main surface 10a. In a plan view of the main surface 10a, the die pad 10 includes a first edge 11, a second edge 12, a third edge 13, and a fourth edge 14. The main surface 10a is defined by the first edge 11, the second edge 12, the third edge 13, and the fourth edge 14. The first edge 11 and the second edge 12 each extend along the longitudinal direction (y direction) of the die pad 10 in a plan view of the main surface 10a. The first edge 11 and the second edge 12 are both end edges of the die pad 10 in the short side direction (x direction) of the die pad 10. The third edge 13 and the fourth edge 14 each extend along the short side direction of the die pad 10 in a plan view of the main surface 10a. The third edge 13 and the fourth edge 14 are each connected to the first edge 11 and the second edge 12. The third edge 13 and the fourth edge 14 are both end edges of the die pad 10 in the longitudinal direction of the die pad 10.

[0014] The distance d between the first edge 11 and the second edge 12 in the short side direction (x direction) of the semiconductor optical element 30 11 (see FIG. 4) is the short side length of the die pad 10 and the first element length L of the semiconductor optical element 30 in the short side direction of the semiconductor optical element 3021 is larger than (see FIG. 4). The distance d between the third edge 13 and the fourth edge 14 in the longitudinal direction (y direction) of the semiconductor optical element 30 12 (see FIG. 4) is the longitudinal length of the die pad 10 and is the second element length L of the semiconductor optical element 30 in the longitudinal direction of the semiconductor optical element 30 22 is larger than (see FIG. 4).

[0015] A first recess 16 that is recessed toward the second edge 12 is formed in the first edge 11. A second recess 17 that is recessed toward the first edge 11 is formed in the second edge 12. In a plan view of the main surface 10a, the first recess 16 and the second recess 17 each have an elongated shape in the longitudinal direction (y direction) of the die pad 10.

[0016] A third recess 18 is formed in the edge (the third edge 13) of the third edge 13 and the fourth edge 14 that is proximal to the connection electrodes 21 and 22. The third recess 18 is provided, for example, at the center of the third edge 13. In a plan view of the main surface 10a, the third recess 18 has an elongated shape in the longitudinal direction (y direction) of the die pad 10. In the longitudinal direction (y direction) of the die pad 10, the third recess 18 is displaced from the first recess 16 and the second recess 17. In the short-side direction (x direction) of the die pad 10, the third recess 18 is displaced from the first recess 16 and the second recess 17. No recess is formed in the edge (in this embodiment, the fourth edge 14) of the third edge 13 and the fourth edge 14 that is distal from the connection electrodes 21 and 22.

[0017] Referring to FIGS. 1 and 2, the bonding pad 25 is disposed on the main surface 9a of the insulating substrate 9. The bonding pad 25 is separated from the die pad 10 in the longitudinal direction (y direction) of the die pad 10. The bonding pad 25 faces the fourth edge 14 of the die pad 10 in the longitudinal direction (y direction) of the die pad 10.

[0018] Referring to FIG. 1, the connection electrodes 21 and 22 are disposed on the main surface 9a of the insulating substrate 9. The connection electrodes 21 and 22 are connected to the die pad 10. The connection electrode 21 is connected to, for example, the first corner of the die pad 10 formed by the first edge 11 and the third edge 13. The connection electrode 22 is connected to, for example, the second corner of the die pad 10 formed by the second edge 12 and the third edge 13.

[0019] The connection electrodes 23 and 24 are disposed on the main surface 9a of the insulating substrate 9. The connection electrodes 23 and 24 are connected to the bonding pad 25. For example, the connection electrode 23 is connected to one edge of the bonding pad 25. The connection electrode 24 is connected to the other edge of the bonding pad 25. The connection electrodes 23 and 24 are separated from the die pad 10 and the connection electrodes 21 and 22.

[0020] Referring to FIGS. 2 and 3, the terminal electrodes 27 and 28 are disposed on the main surface 9b of the insulating substrate 9. The terminal electrode 27 is electrically connected to the connection electrodes 21 and 22 via a conductive film (not shown) formed on the recess 9r. The terminal electrode 28 is electrically connected to the connection electrodes 23 and 24 via a conductive film (not shown) formed on the recess 9r.

[0021] The die pad 10, the connection electrodes 21, 22, 23, and 24, the bonding pad 25, the terminal electrodes 27 and 28, and the conductive film (not shown) formed on the recess 9r are formed of a conductive material such as copper (Cu), for example.

[0022] Referring to FIGS. 1 to 4, the semiconductor optical element 30 is a semiconductor light-emitting element such as a light-emitting diode (LED), for example. The semiconductor optical element 30 may be a semiconductor light-receiving element such as a photodiode (PD) or a phototransistor.

[0023] In a plan view of the main surface 10a, the semiconductor optical element 30 has an elongated shape (e.g., rectangular shape) in the longitudinal direction (y direction) of the die pad 10. The longitudinal direction (y direction) of the semiconductor optical element 30 is the longitudinal direction of the die pad 10. The short-side direction (x direction) of the semiconductor optical element 30 is the short-side direction (x direction) of the die pad 10. The thickness direction (z direction) of the semiconductor optical element 30 is the thickness direction (z direction) of the insulating substrate 9. The semiconductor optical element 30 includes longitudinal side surfaces 36, 37 and short-side surfaces 38, 39. The longitudinal side surfaces 36, 37 each extend in the longitudinal direction of the semiconductor optical element 30 and the thickness direction (z direction) of the semiconductor optical element 30. The longitudinal side surfaces 36, 37 are both end surfaces in the short-side direction (x direction) of the semiconductor optical element 30. The short-side surfaces 38, 39 each extend in the short-side direction of the semiconductor optical element 30 and the thickness direction (z direction) of the semiconductor optical element 30. The short-side surfaces 38, 39 are both end surfaces in the longitudinal direction (y direction) of the semiconductor optical element 30.

[0024] The semiconductor optical element 30 includes an element main body 31, a first electrode 32, a pad electrode 33, and a second electrode 34. The element main body 31 includes a light-emitting portion (not shown) or a light-receiving portion (not shown). The light-emitting portion or the light-receiving portion is configured by, for example, a pn junction or a pin junction. The first electrode 32 and the pad electrode 33 are disposed, for example, on the upper surface of the element main body 31. The first electrode 32 is, for example, a strip-shaped electrode. The pad electrode 33 is connected to the first electrode 32. The second electrode 34 is disposed, for example, on the back surface of the element main body 31.

[0025] In a plan view of the main surface 10a, the semiconductor optical element 30 is disposed inside the first edge 11 (excluding the first recess 16), the second edge 12 (excluding the second recess 17), the third edge 13, and the fourth edge 14 of the die pad 10. In other words, in a plan view of the main surface 10a, the first edge 11 (excluding the first recess 16), the second edge 12 (excluding the second recess 17), the third edge 13, and the fourth edge 14 of the die pad 10 are outside the longitudinal side surfaces 36, 37 and the lateral side surfaces 38, 39 of the semiconductor optical element 30. In a plan view of the main surface 10a, the semiconductor optical element 30 overlaps the main surface 10a, the first recess 16, and the second recess 17. The semiconductor optical element 30 is disposed between the edge (the fourth edge 14 in the present embodiment) of the third edge 13 and the fourth edge 14 that is distal from the connection electrodes 21, 22 and the third recess 18. The semiconductor optical element 30 is disposed offset from the third recess 18 and does not overlap the third recess 18 in a plan view of the main surface 10a.

[0026] The semiconductor optical element 30 is bonded to the die pad 10 using a bonding member 40. The bonding member 40 is, for example, a conductive paste such as silver paste or solder.

[0027] Specifically, in a plan view of the main surface 10a, the bonding member 40 spreads isotropically from the center 40c (see FIG. 4) of the bonding member 40. The distance d 21 from the center 40c (see FIG. 4) of the bonding member 40 to each of the longitudinal side surfaces 36, 37 22 is shorter than the distance d from the center 40c (see FIG. 4) of the bonding member 40 to each of the lateral side surfaces 38, 39. Also, as going from the center 40c (see FIG. 4) of the bonding member 40 toward the periphery of the bonding member 40, the height of the bonding member 40 decreases isotropically. The bonding member 40 is provided on the main surface 10a and within the first recess 16 and the second recess 17.

[0028] The semiconductor optical element 30 is bonded to the main surface 10a of the die pad 10 and the main surface 9a of the insulating substrate 9 in the first recess 16 and the second recess 17 using a bonding member 40. The bonding member 40 is in contact with the back surface of the element body 31 and the second electrode 34. The bonding member 40 crawls up the longitudinal side surfaces 36, 37 and the short side surfaces 38, 39, covering a part of the longitudinal side surface 36, a part of the longitudinal side surface 37, a part of the short side surface 38, and a part of the short side surface 39. The first height h1 (see FIG. 3) of the bonding member 40 on each of the longitudinal side surfaces 36, 37 is greater than the second height h2 (see FIG. 2) of the bonding member 40 on each of the short side surfaces 38, 39.

[0029] Referring to FIGS. 1 and 2, the conductive wire 50 is, for example, a metal wire such as a gold (Au) wire, a copper (Cu) wire, or an aluminum (Al) wire. The conductive wire 50 is bonded to the pad electrode 33 of the semiconductor optical element 30 and the bonding pad 25 of the substrate 8. The semiconductor optical element 30 is electrically connected to the terminal electrode 27 through a conductive film (not shown) formed on the die pad 10, the connection electrodes 21, 22, and the recess 9r. The semiconductor optical element 30 is electrically connected to the terminal electrode 28 through the conductive wire 50, the bonding pad 25, the connection electrodes 23, 24, and a conductive film (not shown) formed on the recess 9r. When a voltage or current is applied between the terminal electrode 27 and the terminal electrode 28, the semiconductor optical element 30 operates. For example, when the semiconductor optical element 30 is an LED, the semiconductor optical element 30 emits light.

[0030] Referring to FIG. 1, the resist 52 is, for example, a solder resist. The resist 52 covers the connection electrodes 21, 22, 23, 24 and closes the recess 9r. At least a part of the die pad 10 and at least a part of the bonding pad 25 are exposed from the resist 52.

[0031] Referring to FIGS. 1 to 3, the sealing member 55 covers the semiconductor optical element 30 and seals the semiconductor optical element 30. The sealing member 55 may further cover the die pad 10, the connection electrodes 21, 22, 23, 24, the bonding pad 25, the main surface 9a, and the resist 52. The sealing member 55 is formed of an insulating resin such as an epoxy resin, for example. When the semiconductor optical element 30 is a semiconductor light-emitting element, the sealing member 55 is formed of a material transparent to the light emitted from the semiconductor light-emitting element. When the semiconductor optical element 30 is a semiconductor light-receiving element, the sealing member 55 is formed of a material transparent to the light received by the semiconductor light-receiving element.

[0032] Hereinafter, with reference to FIG. 4, the first concave portion 16 and the second concave portion 17 of the die pad 10 will be described in detail.

[0033] The first length L of the first concave portion 16 in the short side direction (x direction) of the semiconductor optical element 30 11 and the second length L of the second concave portion 17 in the short side direction of the semiconductor optical element 30 12 are each 30 μm or more. Therefore, even considering the alignment tolerance of the semiconductor optical element 30, the semiconductor optical element 30 more surely overlaps the main surface 10a, the first concave portion 16, and the second concave portion 17 in a plan view of the main surface 10a.

[0034] d 11 -(L 11 +L 12 ) is, for example, 90% or less of L 21 , provided that L 11 is the first length of the first concave portion 16 in the short side direction (x direction) of the semiconductor optical element 30, L 12 is the second length of the second concave portion 17 in the short side direction of the semiconductor optical element 30, and L 21 is the first element length of the semiconductor optical element 30 in the short side direction of the semiconductor optical element 30. Also, as already described, d 11is the distance between the first edge 11 and the second edge 12 in the short side direction of the semiconductor optical element 30, that is, the length of the die pad 10 in the short side direction. Therefore, even considering the alignment tolerance of the semiconductor optical element 30, the semiconductor optical element 30 more reliably overlaps the main surface 10a, the first recess 16, and the second recess 17 in a plan view of the main surface 10a. d 11 -(L 11 +L 12 ) is, for example, 40% or more of L 21 . Therefore, the overlap between the semiconductor optical element 30 and the die pad 10 in a plan view of the main surface 10a does not become excessively small. The heat generated in the semiconductor optical element 30 can be efficiently dissipated to the outside of the semiconductor optical device 1 through the die pad 10. Note that d 11 -(L 11 +L 12 ) is the distance between the first recess 16 and the second recess 17 in the short side direction of the semiconductor optical element 30. d 11 -(L 11 +L 12 ) is the length of the portion of the die pad 10 between the first recess 16 and the second recess 17 in the short side direction of the semiconductor optical element 30.

[0035] The first distance D1 between the third edge 13 and the first recess 16 in the longitudinal direction (y direction) of the semiconductor optical element 30, the second distance D2 between the third edge 13 and the second recess 17 in the longitudinal direction of the semiconductor optical element 30, the third distance D3 between the fourth edge 14 and the first recess 16 in the longitudinal direction of the semiconductor optical element 30, and the fourth distance D4 between the fourth edge 14 and the second recess 17 in the longitudinal direction of the semiconductor optical element 30 are each 30 μm or more. Therefore, even considering the alignment tolerance of the semiconductor optical element 30, the semiconductor optical element 30 more reliably overlaps the main surface 10a, the first recess 16, and the second recess 17 in a plan view of the main surface 10a.

[0036] The first width W1 of the first recess 16 in the longitudinal direction (y direction) of the semiconductor optical element 30 and the second width W2 of the second recess 17 in the longitudinal direction of the semiconductor optical element 30 are each the second element length L of the semiconductor optical element 30 in the longitudinal direction of the semiconductor optical element 30 22is 30% or more. Therefore, the difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36 and 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short side surfaces 38 and 39 of the semiconductor optical element 30 is reduced. The first width W1 of the first recess 16 and the second width W2 of the second recess 17 are each 90% or less of the second element length L of the semiconductor optical element 30 in the longitudinal direction of the semiconductor optical element 30 22 is 90% or less. Therefore, the overlap between the semiconductor optical element 30 and the die pad 10 in a plan view of the main surface 10a does not become excessively small. Heat generated in the semiconductor optical element 30 can be efficiently dissipated to the outside of the semiconductor optical device 1 through the die pad 10

[0037] Referring to FIG. 5, a method for manufacturing the semiconductor optical device 1 of the present embodiment will be described

[0038] The bonding member 40 is supplied onto the substrate 8 (step S1). The bonding member 40 is supplied, for example, onto the main surface 10a of the die pad 10 and onto the main surface 9a of the insulating substrate 9 within the first recess 16 and the second recess 17 by a pin transfer method. The bonding member 40 is provided on the main surface 10a and within the first recess 16 and the second recess 17. In a plan view of the main surface 10a, the bonding member 40 spreads isotropically from the center 40c of the bonding member 40 (see FIG. 4). Also, as going from the center 40c of the bonding member 40 (see FIG. 4) toward the periphery of the bonding member 40, the height of the bonding member 40 decreases isotropically

[0039] The semiconductor optical element 30 is placed on the bonding member 40 (step S2). The semiconductor optical element 30 is aligned with the die pad 10 with the third recess 18 of the die pad 10 as a guide. The bonding member 40 contacts the back surface of the element body 31 and the second electrode 34. A part of the semiconductor optical element 30 sinks into the bonding member 40 due to the self-weight of the semiconductor optical element 30. The bonding member 40 crawls up the longitudinal side surfaces 36 and 37 and the short side surfaces 38 and 39, covering a part of the longitudinal side surface 36, a part of the longitudinal side surface 37, a part of the short side surface 38, and a part of the short side surface 39. The distance d from the center 40c of the bonding member 40 (see FIG. 4) to each of the longitudinal side surfaces 36 and 37 21is the distance d from the center 40c of the joining member 40 (see FIG. 4) to each of the short sides 38, 39 22 Therefore, a first height h1 of the joining member 40 on each of the long sides 36, 37 is greater than a second height h2 of the joining member 40 on each of the short sides 38, 39.

[0040] The bonding member 40 is hardened (step S3). In this manner, the semiconductor optical device 30 is bonded to the main surface 10a of the die pad 10 and the main surface 9a of the insulating substrate 9 in the first recess 16 and the second recess 17.

[0041] The conductive wire 50 is bonded to the pad electrode 33 and the bonding pad 25 of the semiconductor optical element 30 (step S4). Then, a sealing member 55 is provided (step S5). In this manner, the semiconductor optical device 1 is obtained.

[0042] 6, the semiconductor optical device 1 is used in a sensor 2. The sensor 2 includes the semiconductor optical device 1 and a light receiving element 3. The semiconductor optical device 1 includes a semiconductor light emitting element such as an LED as a semiconductor optical element 30. The light receiving element 3 receives light emitted from the semiconductor light emitting element of the semiconductor optical device 1. The light receiving element 3 is, for example, a photodiode. The sensor 2 is configured to perform various sensing operations based on the intensity of light detected by the light receiving element 3.

[0043] The operation of the semiconductor optical device 1 of this embodiment will be described in comparison with a comparative semiconductor optical device 1a shown in Figures 7 and 8. The comparative semiconductor optical device 1a has a similar configuration to the semiconductor optical device 1 of this embodiment, but differs from the semiconductor optical device 1 of this embodiment in that the die pad 10 does not have the first recess 16 and the second recess 17.

[0044] When the bonding member 40 is supplied onto the substrate 8 (step S1 in FIG. 5), the bonding member 40 spreads isotropically in a plan view of the main surface 10a from the center 40c of the bonding member 40 (see FIG. 4). As going from the center 40c of the bonding member 40 (see FIG. 4) toward the periphery of the bonding member 40, the height of the bonding member 40 decreases isotropically. When the semiconductor optical element 30 is placed on the bonding member 40 (step S2 in FIG. 5), the distance d 21 from the center 40c of the bonding member 40 (see FIG. 4) to each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 22 is shorter than the distance d from the center 40c of the bonding member 40 (see FIG. 4) to each of the short-side surfaces 38, 39 of the semiconductor optical element 30. In the semiconductor optical device 1a of the comparative example, the first recess 16 and the second recess 17 are not provided in the die pad 10.

[0045] Therefore, the bonding member 40 climbs up high along the longitudinal side surfaces 36, 37 of the semiconductor optical element 30. In the semiconductor optical device 1a of the comparative example, the difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short-side surfaces 38, 39 of the semiconductor optical element 30 is large. Due to the tolerance of the supply amount of the bonding member 40, as shown in FIG. 8, the bonding member 40 may contact the upper surface (for example, the first electrode 32 or the pad electrode 33) of the semiconductor optical element 30. When the bonding member 40 contacts the upper surface of the semiconductor optical element 30, the intensity of the light emitted from the semiconductor optical element 30 decreases, or the intensity of the light incident on the semiconductor optical element 30 decreases. When the bonding member 40 contacts the first electrode 32 or the pad electrode 33, the semiconductor optical element 30 does not operate. Thus, the semiconductor optical device 1 becomes defective.

[0046] When the supply amount of the bonding member 40 is decreased, contact of the bonding member 40 with the upper surface (e.g., the first electrode 32 or the pad electrode 33) of the semiconductor optical element 30 is prevented. However, the second height h2 of the bonding member 40 on each of the short side surfaces 38, 39 of the semiconductor optical element 30 decreases, and the bonding strength of the semiconductor optical element 30 by the bonding member 40 decreases. Therefore, the semiconductor optical device 1 becomes defective. In order to prevent these defects of the semiconductor optical device 1, the supply amount of the bonding member 40 must be managed more precisely, and the manufacturing cost of the semiconductor optical device 1 increases.

[0047] On the other hand, in the semiconductor optical device 1 of the present embodiment, the first recess 16 and the second recess 17 are provided in the die pad 10. Since the bonding member 40 also exists in the first recess 16 and the second recess 17, the first height h1 of the bonding member 40 on the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 decreases. The difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short side surfaces 38, 39 of the semiconductor optical element 30 in the semiconductor optical device 1 of the present embodiment is smaller than the difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short side surfaces 38, 39 of the semiconductor optical element 30 in the semiconductor optical device 1a of the comparative example.

[0048] Therefore, contact of the bonding member 40 with the upper surface (e.g., the first electrode 32 or the pad electrode 33) of the semiconductor optical element 30 due to the tolerance of the supply amount of the bonding member 40 is prevented. A decrease in the intensity of light emitted from the semiconductor optical element 30 and a decrease in the intensity of light incident on the semiconductor optical element 30, which are caused by contact of the bonding member 40 with the upper surface of the semiconductor optical element 30, are prevented. Since the bonding member 40 is separated from the first electrode 32 or the pad electrode 33, the semiconductor optical element 30 operates normally. Defects of the semiconductor optical device 1 are prevented without more precisely managing the supply amount of the bonding member 40. Management of the supply amount of the bonding member 40 becomes easy. The productivity of the semiconductor optical device 1 is improved, and the manufacturing cost of the semiconductor optical device 1 is reduced.

[0049] In addition, in the present embodiment, since it is not necessary to reduce the supply amount of the bonding member 40 in order to prevent the bonding member 40 from contacting the upper surface of the semiconductor optical element 30 (for example, the first electrode 32 or the pad electrode 33), the bonding of the semiconductor optical element 30 by the bonding member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0050] A modification of the semiconductor optical device 1 according to the present embodiment will be described. When the second electrode 34 of the semiconductor optical element 30 is provided on a surface other than the back surface of the element main body 31 (for example, the upper surface of the element main body 31), the bonding member 40 may be an insulating resin adhesive such as an epoxy resin, and the second electrode 34 may be electrically connected to the die pad 10 using a conductive wire (not shown) different from the conductive wire 50.

[0051] The effects of the semiconductor optical device 1, its manufacturing method, and the sensor 2 according to the present embodiment will be described.

[0052] The semiconductor optical device 1 according to the present embodiment includes a substrate 8, a semiconductor optical element 30, and a bonding member 40. The substrate 8 includes an insulating substrate 9 and a die pad 10 disposed on the insulating substrate 9. The die pad 10 includes a first edge 11, a second edge 12, a third edge 13, and a fourth edge 14. The die pad 10 has a main surface 10a defined by the first edge 11, the second edge 12, the third edge 13, and the fourth edge 14. The first edge 11 and the second edge 12 each extend along the longitudinal direction of the semiconductor optical element 30 in a plan view of the main surface 10a. The third edge 13 and the fourth edge 14 each extend along the short-side direction of the semiconductor optical element 30 in a plan view of the main surface 10a and are connected to the first edge 11 and the second edge 12. A first recess 16 that is recessed toward the second edge 12 is formed in the first edge 11. A second recess 17 that is recessed toward the first edge 11 is formed in the second edge 12. The semiconductor optical element 30 is bonded to the main surface 10a of the die pad 10 using the bonding member 40, and in a plan view of the main surface 10a, the semiconductor optical element 30 overlaps the main surface 10a, the first recess 16, and the second recess 17. The bonding member 40 is provided on the main surface 10a, inside the first recess 16, and inside the second recess 17.

[0053] Since the joining member 40 is also provided in the first recess 16 and the second recess 17, the height (first height h1) of the joining member 40 on the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 decreases. The difference between the first height h1 of the joining member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the joining member 40 on each of the short-side surfaces 38, 39 of the semiconductor optical element 30 decreases. Therefore, defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the joining member 40 are prevented. The management of the supply amount of the joining member 40 becomes easy. Further, since it is not necessary to reduce the supply amount of the joining member 40 in order to prevent the joining member 40 from contacting the upper surface of the semiconductor optical element 30, the joining of the semiconductor optical element 30 by the joining member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0054] In the semiconductor optical device 1 of the present embodiment, the first length L of the first recess 16 in the short-side direction of the semiconductor optical element 30 11 and the second length L of the second recess 17 in the short-side direction of the semiconductor optical element 30 12 are each 30 μm or more.

[0055] Therefore, even considering the alignment tolerance of the semiconductor optical element 30, the semiconductor optical element 30 more surely overlaps the main surface 10a, the first recess 16, and the second recess 17 in a plan view of the main surface 10a. Defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the joining member 40 are prevented. The management of the supply amount of the joining member 40 becomes easy. Further, since it is not necessary to reduce the supply amount of the joining member 40 in order to prevent the joining member 40 from contacting the upper surface of the semiconductor optical element 30, the joining of the semiconductor optical element 30 by the joining member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0056] In the semiconductor optical device 1 of the present embodiment, d 11 -(L 11 +L 12 ) is 90% or less of L 21 , where d 11 is the distance between the first edge 11 and the second edge 12 in the short-side direction of the semiconductor optical element 30, and L 11is the first length of the first recess 16 in the short direction of the semiconductor optical element 30, L 12 is the second length of the second recess 17 in the short direction of the semiconductor optical element 30, L 21 is the first element length of the semiconductor optical element 30 in the short direction of the semiconductor optical element 30.

[0057] Therefore, even considering the alignment tolerance of the semiconductor optical element 30, the semiconductor optical element 30 more surely overlaps the main surface 10a, the first recess 16, and the second recess 17 in a plan view of the main surface 10a. Defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the joining member 40 are prevented. Management of the supply amount of the joining member 40 becomes easy. Also, since it is not necessary to reduce the supply amount of the joining member 40 in order to prevent contact of the joining member 40 with the upper surface of the semiconductor optical element 30, the joining of the semiconductor optical element 30 by the joining member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0058] In the semiconductor optical device 1 of the present embodiment, d 11 -(L 11 +L 12 ) is 40% or more of L 21 .

[0059] Therefore, the overlap between the semiconductor optical element 30 and the die pad 10 in a plan view of the main surface 10a does not become excessively small. Heat generated in the semiconductor optical element 30 is efficiently dissipated to the outside of the semiconductor optical device 1 through the die pad 10.

[0060] In the semiconductor optical device 1 of the present embodiment, a first distance D1 between the third edge 13 and the first recess 16 in the longitudinal direction of the semiconductor optical element 30, a second distance D2 between the third edge 13 and the second recess 17 in the longitudinal direction of the semiconductor optical element 30, a third distance D3 between the fourth edge 14 and the first recess 16 in the longitudinal direction of the semiconductor optical element 30, and a fourth distance D4 between the fourth edge 14 and the second recess 17 in the longitudinal direction of the semiconductor optical element 30 are each 30 μm or more.

[0061] Therefore, even considering the alignment tolerance of the semiconductor optical element 30, the semiconductor optical element 30 more reliably overlaps the main surface 10a, the first concave portion 16, and the second concave portion 17 in a plan view of the main surface 10a. Defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the bonding member 40 are prevented. The management of the supply amount of the bonding member 40 becomes easy. Further, since it is not necessary to reduce the supply amount of the bonding member 40 in order to prevent contact of the bonding member 40 with the upper surface of the semiconductor optical element 30, the bonding of the semiconductor optical element 30 by the bonding member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0062] In the semiconductor optical device 1 of the present embodiment, the first width W1 of the first concave portion 16 in the longitudinal direction of the semiconductor optical element 30 and the second width W2 of the second concave portion 17 in the longitudinal direction of the semiconductor optical element 30 are each 30% or more of the second element length L of the semiconductor optical element 30 in the longitudinal direction of the semiconductor optical element 30. 22 of the semiconductor optical element 30.

[0063] Therefore, the difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short side surfaces 38, 39 of the semiconductor optical element 30 is reduced. Defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the bonding member 40 are prevented. The management of the supply amount of the bonding member 40 becomes easy. Further, since it is not necessary to reduce the supply amount of the bonding member 40 in order to prevent contact of the bonding member 40 with the upper surface of the semiconductor optical element 30, the bonding of the semiconductor optical element 30 by the bonding member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0064] In the semiconductor optical device 1 of the present embodiment, the distance d between the third edge 13 and the fourth edge 14 12 is larger than the second element length L of the semiconductor optical element 30 in the longitudinal direction of the semiconductor optical element 30. 22 is larger than the second element length L of the semiconductor optical element 30 in the longitudinal direction of the semiconductor optical element 30.

[0065] Since the area of the die pad 10 increases, heat generated in the semiconductor optical element 30 is efficiently dissipated to the outside of the semiconductor optical device 1 through the die pad 10.

[0066] In the semiconductor optical device 1 of the present embodiment, the substrate 8 further includes a connection electrode 21 connected to a corner portion of the die pad 10 formed by the first edge 11 and the third edge 13. In a plan view of the main surface 10a, the first recess 16 and the second recess 17 each have an elongated shape in the longitudinal direction of the semiconductor optical element 30.

[0067] The die pad 10 and the connection electrode 21 are part of a heat dissipation path for the semiconductor optical element 30. The first recess 16 and the second recess 17 have a shape that is less likely to increase the thermal resistance of the heat dissipation path. Therefore, the heat dissipation performance of the semiconductor optical element 30 can be ensured.

[0068] In the semiconductor optical device 1 of the present embodiment, the substrate 8 further includes a connection electrode 21 connected to the die pad 10. A recess is not formed in an edge (for example, the fourth edge 14) that is distal from the connection electrode 21 among the third edge 13 and the fourth edge 14.

[0069] Therefore, the difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short side surfaces 38, 39 of the semiconductor optical element 30 is reduced. Defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the bonding member 40 are prevented. The management of the supply amount of the bonding member 40 becomes easy. Also, since it is not necessary to reduce the supply amount of the bonding member 40 to prevent contact of the bonding member 40 with the upper surface of the semiconductor optical element 30, the bonding of the semiconductor optical element 30 by the bonding member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0070] In the semiconductor optical device 1 of the present embodiment, a third recess 18 is formed in an edge (for example, the third edge 13) that is proximal to the connection electrode 21 among the third edge 13 and the fourth edge 14. The semiconductor optical element 30 is disposed between an edge (for example, the fourth edge 14) that is distal from the connection electrode 21 among the third edge 13 and the fourth edge 14 and the third recess 18.

[0071] Therefore, the semiconductor optical element 30 is aligned with the die pad 10 with the third recess 18 as a reference. Displacement of the semiconductor optical element 30 is prevented. Also, since the third recess 18 is located at a position where it is difficult to increase the thermal resistance of the heat dissipation path for the semiconductor optical element 30, the heat dissipation performance of the semiconductor optical element 30 can be ensured. When the semiconductor optical device 1 is used for the sensor 2 (see FIG. 6), the accuracy of the sensor 2 can be improved.

[0072] In the semiconductor optical device 1 of the present embodiment, the semiconductor optical element 30 is a semiconductor light emitting element.

[0073] Therefore, the difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short side surfaces 38, 39 of the semiconductor optical element 30 is reduced. Defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the bonding member 40 (for example, failure of the semiconductor light emitting element or decrease in the intensity of light emitted from the semiconductor light emitting element) are prevented. Management of the supply amount of the bonding member 40 becomes easy. Also, since it is not necessary to reduce the supply amount of the bonding member 40 to prevent contact of the bonding member 40 with the upper surface of the semiconductor optical element 30, the bonding of the semiconductor optical element 30 by the bonding member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0074] The sensor 2 of the present embodiment includes the semiconductor optical device 1 of the present embodiment and a light receiving element 3 that receives light emitted from the semiconductor light emitting element.

[0075] Therefore, the difference between the first height h1 of the bonding member 40 on each of the longitudinal side surfaces 36, 37 of the semiconductor optical element 30 and the second height h2 of the bonding member 40 on each of the short side surfaces 38, 39 of the semiconductor optical element 30 is reduced. Defects of the sensor 2 due to the tolerance of the supply amount of the bonding member 40 (for example, failure of the semiconductor light-emitting element or decrease in the intensity of light emitted from the semiconductor light-emitting element) are prevented. The management of the supply amount of the bonding member 40 becomes easy. Also, since it is not necessary to reduce the supply amount of the bonding member 40 to prevent contact of the bonding member 40 with the upper surface of the semiconductor optical element 30, the bonding of the semiconductor optical element 30 by the bonding member 40 is strong. The reliability of the sensor 2 is improved.

[0076] The manufacturing method of the semiconductor optical device 1 according to the present embodiment includes supplying the bonding member 40 onto the substrate 8 (step S1). The substrate 8 includes an insulating substrate 9 and a die pad 10 disposed on the insulating substrate 9. The die pad 10 includes a first edge 11, a second edge 12, a third edge 13, and a fourth edge 14, and has a main surface 10a defined by the first edge 11, the second edge 12, the third edge 13, and the fourth edge 14. The third edge 13 and the fourth edge 14 are each connected to the first edge 11 and the second edge 12. A first concave portion 16 recessed toward the second edge 12 is formed in the first edge 11. A second concave portion 17 recessed toward the first edge 11 is formed in the second edge 12. The bonding member 40 is provided on the main surface 10a, in the first concave portion 16, and in the second concave portion 17. The manufacturing method of the semiconductor optical device 1 according to the present embodiment includes placing the semiconductor optical element 30 on the bonding member 40 (step S2). In a plan view of the main surface 10a, the semiconductor optical element 30 overlaps the main surface 10a, the first concave portion 16, and the second concave portion 17. The first edge 11 and the second edge 12 each extend along the longitudinal direction of the semiconductor optical element 30 in a plan view of the main surface 10a. The third edge 13 and the fourth edge 14 each extend along the short side direction of the semiconductor optical element 30 in a plan view of the main surface 10a. The manufacturing method of the semiconductor optical device 1 according to the present embodiment includes curing the bonding member 40 (step S3) and bonding the semiconductor optical element 30 to the main surface 10a of the die pad 10 using the bonding member 40.

[0077] Therefore, the height (first height h1) of the joining member 40 on the longitudinal side surfaces 36 and 37 of the semiconductor optical element 30 decreases. The difference between the first height h1 of the joining member 40 on each of the longitudinal side surfaces 36 and 37 of the semiconductor optical element 30 and the second height h2 of the joining member 40 on each of the short-side surfaces 38 and 39 of the semiconductor optical element 30 decreases. Defects of the semiconductor optical device 1 due to the tolerance of the supply amount of the joining member 40 are prevented. The management of the supply amount of the joining member 40 becomes easy. Further, since it is not necessary to reduce the supply amount of the joining member 40 in order to prevent the joining member 40 from contacting the upper surface of the semiconductor optical element 30, the joining of the semiconductor optical element 30 by the joining member 40 is strong. The reliability of the semiconductor optical device 1 is improved.

[0078] Hereinafter, aspects of the present disclosure will be collectively described as appendices. (Appendix 1) A substrate, A semiconductor optical element, And a joining member, The substrate includes an insulating substrate and a die pad disposed on the insulating substrate, The die pad includes a first edge, a second edge, a third edge, and a fourth edge, and has a main surface defined by the first edge, the second edge, the third edge, and the fourth edge, The first edge and the second edge each extend along the longitudinal direction of the semiconductor optical element in a plan view of the main surface, The third edge and the fourth edge each extend along the short-side direction of the semiconductor optical element in the plan view and are connected to the first edge and the second edge, A first recess recessed toward the second edge is formed in the first edge, A second recess recessed toward the first edge is formed in the second edge, The semiconductor optical element is joined to the main surface of the die pad using the joining member, and in the plan view, the semiconductor optical element overlaps the main surface, the first recess, and the second recess, The joining member is provided on the main surface, inside the first concave portion, and inside the second concave portion, a semiconductor optical device. (Appendix 2) The first length of the first concave portion in the short side direction of the semiconductor optical element and the second length of the second concave portion in the short side direction of the semiconductor optical element are each 30 μm or more, the semiconductor optical device according to Appendix 1. (Appendix 3) d 11 -(L 11 +L 12 ) is 90% or less of L, provided that d 21 is the distance between the first edge and the second edge in the short side direction of the semiconductor optical element, L 11 is the first length of the first concave portion in the short side direction of the semiconductor optical element, L 11 is the second length of the second concave portion in the short side direction of the semiconductor optical element, L 12 is the first element length of the semiconductor optical element in the short side direction of the semiconductor optical element, the semiconductor optical device according to Appendix 1. 21 is the first element length of the semiconductor optical element in the short side direction of the semiconductor optical element, the semiconductor optical device according to Appendix 1. (Appendix 4) d 11 -(L 11 +L 12 ) is 40% or more of L, the semiconductor optical device according to Appendix 3. 21 is the first element length of the semiconductor optical element in the short side direction of the semiconductor optical element, the semiconductor optical device according to Appendix 3. (Appendix 5) The first distance between the third edge and the first concave portion in the longitudinal direction of the semiconductor optical element, the second distance between the third edge and the second concave portion in the longitudinal direction of the semiconductor optical element, the third distance between the fourth edge and the first concave portion in the longitudinal direction of the semiconductor optical element, and the fourth distance between the fourth edge and the second concave portion in the longitudinal direction of the semiconductor optical element are each 30 μm or more, the semiconductor optical device according to any one of Appendices 1 to 4. (Appendix 6) The first width of the first recess in the longitudinal direction of the semiconductor optical element and the second width of the second recess in the longitudinal direction of the semiconductor optical element are each 30% or more of the second element length of the semiconductor optical element in the longitudinal direction of the semiconductor optical element. The semiconductor optical device according to any one of Appendices 1 to 5. (Appendix 7) The distance between the third edge and the fourth edge is greater than the second element length of the semiconductor optical element in the longitudinal direction of the semiconductor optical element. The semiconductor optical device according to any one of Appendices 1 to 5. (Appendix 8) The substrate further includes a connection electrode connected to a corner of the die pad formed by the first edge and the third edge. In the plan view, each of the first recess and the second recess has an elongated shape in the longitudinal direction of the semiconductor optical element. The semiconductor optical device according to any one of Appendices 1 to 7. (Appendix 9) The substrate further includes a connection electrode connected to the die pad. No recess is formed at an edge of the third edge and the fourth edge that is distal from the connection electrode. The semiconductor optical device according to any one of Appendices 1 to 7. (Appendix 10) A third recess is formed at an edge of the third edge and the fourth edge that is proximal to the connection electrode. The semiconductor optical element is disposed between the edge of the third edge and the fourth edge that is distal from the connection electrode and the third recess. The semiconductor optical device according to Appendix 8 or 9. (Appendix 11) The semiconductor optical element is a semiconductor light emitting element. The semiconductor optical device according to any one of Appendices 1 to 10. (Appendix 12) The semiconductor optical device according to Appendix 11. A sensor including a light receiving element that receives light emitted from the semiconductor light emitting element. (Appendix 13) Comprising supplying a bonding member onto a substrate, the substrate including an insulating substrate and a die pad disposed on the insulating substrate, the die pad including a first edge, a second edge, a third edge, and a fourth edge, and having a main surface defined by the first edge, the second edge, the third edge, and the fourth edge, the third edge and the fourth edge being respectively connected to the first edge and the second edge, a first recess recessed toward the second edge being formed in the first edge, a second recess recessed toward the first edge being formed in the second edge, and the bonding member being provided on the main surface, within the first recess, and within the second recess. Comprising placing a semiconductor optical element onto the bonding member, in a plan view of the main surface, the semiconductor optical element overlapping the main surface, the first recess, and the second recess, the first edge and the second edge respectively extending along the longitudinal direction of the semiconductor optical element in the plan view, the third edge and the fourth edge respectively extending along the short-side direction of the semiconductor optical element in the plan view, and further A method for manufacturing a semiconductor optical device, comprising curing the bonding member and bonding the semiconductor optical element to the main surface of the die pad using the bonding member.

[0079] The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. The scope of the present disclosure is indicated by the scope of claims rather than the above description, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims.

Description of Reference Numerals

[0080] 1, 1a Semiconductor optical device, 2 Sensor, 3 Light-receiving element, 8 Substrate, 9 Insulating substrate, 9a, 9b Main surface, 9r Concave portion, 10 Die pad, 10a Main surface, 11 First edge, 12 Second edge, 13 Third edge, 14 Fourth edge, 16 First concave portion, 17 Second concave portion, 18 Third concave portion, 21, 22, 23, 24 Connection electrode, 25 Bonding pad, 27, 28 Terminal electrode, 30 Semiconductor optical element, 31 Element body, 32 First electrode, 33 Pad electrode, 34 Second electrode, 36, 37 Longitudinal side surface, 38, 39 Lateral side surface, 40 Bonding member, 40c Center, 50 Conductive wire, 52 Resist, 55 Sealing member.

Claims

1. A substrate, a semiconductor optical element, and a bonding member, wherein the substrate includes an insulating substrate and a die pad disposed on the insulating substrate, the die pad includes a first edge, a second edge, a third edge, and a fourth edge, and has a main surface defined by the first edge, the second edge, the third edge, and the fourth edge, the first edge and the second edge each extend along the longitudinal direction of the semiconductor optical element in a plan view of the main surface, the third edge and the fourth edge each extend along the short transverse direction of the semiconductor optical element in the plan view and are connected to the first edge and the second edge, a first recess recessed toward the second edge is formed in the first edge, a second recess recessed toward the first edge is formed in the second edge, the semiconductor optical element is bonded to the main surface of the die pad using the bonding member, and in the plan view, the semiconductor optical element overlaps the main surface, the first recess, and the second recess, the bonding member is provided on the main surface, in the first recess, and in the second recess, a semiconductor optical device.

2. The semiconductor optical device according to claim 1, wherein a first length of the first recess in the short transverse direction of the semiconductor optical element and a second length of the second recess in the short transverse direction of the semiconductor optical element are each 30 μm or more.

3. d １１ -(L １１ +L １２ ) is 90% or less of L ２１ , provided that d １１ is the distance between the first edge and the second edge of the semiconductor optical element in the short side direction of the semiconductor optical element, L １１ is the first length of the first recess in the short side direction of the semiconductor optical element, L １２ is the second length of the second recess in the short side direction of the semiconductor optical element, L ２１ is the first element length of the semiconductor optical element in the short side direction of the semiconductor optical element, the semiconductor optical device according to claim 1.

4. d １１ -(L １１ +L １２ ) is 40% or more of L ２１ The semiconductor optical device according to claim 3

5. The semiconductor optical device according to claim 1, wherein a first distance between the third edge and the first recess in the longitudinal direction of the semiconductor optical element, a second distance between the third edge and the second recess in the longitudinal direction of the semiconductor optical element, a third distance between the fourth edge and the first recess in the longitudinal direction of the semiconductor optical element, and a fourth distance between the fourth edge and the second recess in the longitudinal direction of the semiconductor optical element are each 30 μm or more.

6. The semiconductor optical device according to claim 1, wherein a first width of the first recess in the longitudinal direction of the semiconductor optical element and a second width of the second recess in the longitudinal direction of the semiconductor optical element are each 30% or more of a second element length of the semiconductor optical element in the longitudinal direction of the semiconductor optical element.

7. The semiconductor optical device according to claim 1, wherein the distance between the third edge and the fourth edge is greater than a second element length of the semiconductor optical element in the longitudinal direction of the semiconductor optical element.

8. The substrate further includes a connection electrode connected to a corner of the die pad formed by the first edge and the third edge, In the plan view, each of the first recess and the second recess has an elongated shape in the longitudinal direction of the semiconductor optical element. The semiconductor optical device according to claim 1.

9. The substrate further includes a connection electrode connected to the die pad, No recess is formed at an edge of the third edge and the fourth edge that is distal from the connection electrode. The semiconductor optical device according to claim 1.

10. A third recess is formed at an edge of the third edge and the fourth edge that is proximal to the connection electrode, The semiconductor optical element is disposed between the edge of the third edge and the fourth edge that is distal from the connection electrode and the third recess. The semiconductor optical device according to claim 8.

11. The semiconductor optical element is a semiconductor light emitting element. The semiconductor optical device according to any one of claims 1 to 10.

12. A sensor comprising the semiconductor optical device according to claim 11, And a light receiving element that receives light emitted from the semiconductor light emitting element.

13. Comprising supplying a bonding member onto a substrate, the substrate includes an insulating substrate and a die pad disposed on the insulating substrate, the die pad includes a first edge, a second edge, a third edge, and a fourth edge, and has a main surface defined by the first edge, the second edge, the third edge, and the fourth edge, the third edge and the fourth edge are each connected to the first edge and the second edge, a first recess recessed toward the second edge is formed in the first edge, a second recess recessed toward the first edge is formed in the second edge, and the bonding member is provided on the main surface, in the first recess, and in the second recess. A method of manufacturing a semiconductor optical device, comprising placing a semiconductor optical element on the bonding member, wherein in a plan view of the main surface, the semiconductor optical element overlaps the main surface, the first recess, and the second recess, the first edge and the second edge each extend along the longitudinal direction of the semiconductor optical element in the plan view, the third edge and the fourth edge each extend along the short-side direction of the semiconductor optical element in the plan view, and further, curing the bonding member to bond the semiconductor optical element to the main surface of the die pad using the bonding member.

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