Sample holding unit, ion milling device equipped with the same, and method for preparing tem sample

Abstract

To provide a clamp-type sample holding unit that prevents a substrate material from getting onto a sample surface during ion milling.SOLUTION: A sample holding unit 1000 includes a sample clamping and fixing portion 100 and a cylindrical mounting stage 200. The sample clamping and fixing portion 100 includes a first sample clamping plate having a first through hole in the center and a groove formed along the first through hole along which the outer periphery of the sample is placed, and a second sample clamping plate having a second through hole in the center and clamping the outer periphery of the sample together with the first sample clamping plate. The cylindrical mounting stage 200 includes a cylindrical portion and a mounting portion arranged at one end of the cylindrical portion and having a third through hole in the center, on which the first sample clamping plate and the second sample clamping plate are placed while clamping the outer periphery of the sample.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a sample holding unit, an ion milling apparatus including the same, and a method for producing a sample for TEM.

Background Art

[0002] According to a transmission electron microscope (TEM), based on a transmission electron image obtained by irradiating a sample with an electron beam accelerated at a high voltage, findings such as the crystal structure and interface state of the sample can be obtained with atomic-level resolution. Therefore, for improving the properties of a sample such as a functional thin film, whose microstructure is strongly correlated with the properties, the transmission electron microscope is useful for observing the microstructure and clarifying its expression mechanism.

[0003] In order to observe a sample with a transmission electron microscope, it is usually necessary to thin the sample to about several tens of nm. Generally, the ion milling method is used for thinning the sample. The ion milling method is a technique for shaving a sample by utilizing a sputtering phenomenon in which an argon ion beam accelerated in a vacuum collides with the sample to eject atoms and molecules on the sample surface.

[0004] When observing a bulk sample with a transmission electron microscope, usually, after thinning the bulk sample to about several tens of μm using sandpaper or a dimple-making device, ion milling is performed from both sides of the sample to make a small hole, and the thin region around the hole is observed. On the other hand, when observing a thin film of a sample in which a thin film is formed on a substrate with a transmission electron microscope, the process of thinning to about several tens of μm is the same as that for a bulk sample, but ion milling is performed from the surface on the opposite side of the surface on which the thin film is formed of the substrate.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] FIG. 14A and FIG. 14B show partial schematic views of an example of a sample holding unit that has been conventionally used in an ion milling apparatus. FIG. 14A is a cross-sectional schematic view, and FIG. 14B is a plan schematic view. The sample holding unit 1 shown in FIGS. 14A and 14B is an example of a clamping method for sandwiching and holding a sample S.

[0007] The sample holding unit 1 includes a cylindrical sample placement member 2 having two sample support receiving portions 2A and 2B erected on the upper end side, and sample clamping portions 3A and 3B that are arranged outside the sample placement member 2 and sandwich the sample S together with the two sample support receiving portions 2A and 2B. The sample clamping portion 3A has a columnar portion 3Aa and an arm portion 3Ab located on the upper end side thereof. Similarly, the sample clamping portion 3B has a columnar portion 3Ba and an arm portion 3Bb located on the upper end side thereof. The sample clamping portions 3A and 3B are arranged across the sample placement member 2 on a line connecting the sample support receiving portion 2A and the sample support receiving portion 2B.

[0008] The sample clamping portions 3A and 3B are movable in the vertical direction. When placing the sample S, first, the sample clamping portions 3A and 3B are moved upward, and then the sample clamping portions 3A and 3B are moved downward to clamp the sample S between the sample support receiving portion 2A and the arm portion 3Ab and between the sample support receiving portion 2B and the arm portion 3Bb.

[0009] When performing ion milling by applying an ion beam to the sample S from the side of the substrate Sb of the sample S using the sample holding unit 1, there has been a problem that the material of the ion-milled substrate Sb wraps around the film surface F of the thin film of the sample S and contaminates the film surface F.

[0010] On the other hand, as another conventional example of a sample holding unit used in an ion milling apparatus, a sample sticking type (not shown) is known. In the sample sticking type sample holding unit, since the sample is fixed by sticking it to the mounting surface with wax, contamination due to intrusion is completely prevented. However, when removing the sample from the mounting surface, it is necessary to apply heat or immerse it in an organic solvent, and the portion suitable for observing the thin area around the hole may be damaged.

[0011] The present invention has been made in view of the above circumstances, and an object thereof is to provide a clamping type sample holding unit in which intrusion of substrate material onto the sample surface during ion milling is prevented, an ion milling apparatus including the same, and a method for producing a TEM sample.

Means for Solving the Problems

[0012] In order to solve the above problems, the present invention provides the following means.

[0013] Aspect 1 of the present invention is a sample holding unit used in an ion milling apparatus, comprising a first sample clamping plate having a first through hole in a central portion and a groove formed along the first through hole for placing an outer peripheral portion of a sample, a second sample clamping plate having a second through hole in a central portion and sandwiching the outer peripheral portion of the sample together with the first sample clamping plate, a cylindrical portion, and a cylindrical mounting table having a mounting portion disposed on one end side of the cylindrical portion, having a third through hole in a central portion, and on which the first sample clamping plate and the second sample clamping plate in a state of sandwiching the outer peripheral portion of the sample are placed.

[0014] Aspect 2 of the present invention is the sample holding unit according to Aspect 1, further comprising a spring member capable of fixing the sample by elastic force in a state where the outer peripheral portion of the sample is sandwiched between the first sample clamping plate and the second sample clamping plate.

[0015] Aspect 3 of the present invention is, in the sample holding unit of Aspect 2, provided with a frame-shaped member that supports an outer peripheral portion of either the sample clamping first plate or the sample clamping second plate and has a spring locking groove into which the spring member is locked, and the frame-shaped member is placed on the placing portion of the cylindrical placing table.

[0016] Aspect 4 of the present invention is, in the sample holding unit of Aspect 3, the frame-shaped member is provided with a locking convex portion that can be locked in a locking groove provided at one end of the cylindrical portion.

[0017] Aspect 5 of the present invention is, in the sample holding unit of Aspect 4, the locking convex portion has a radial length such that it protrudes radially from the outer surface of the cylindrical portion in a state of being locked in the locking groove provided at one end of the cylindrical portion.

[0018] Aspect 6 of the present invention is an ion milling apparatus including one sample holding unit among Aspects 1 to 5.

[0019] Aspect 7 of the present invention is a method for manufacturing a sample for TEM, which performs ion milling with an ion milling apparatus using one sample holding unit among Aspects 1 to 5 to manufacture a sample for a transmission electron microscope.

Advantages of the Invention

[0020] According to the present invention, it is possible to provide a clamping type sample holding unit in which the intrusion of the substrate material onto the sample surface during ion milling is prevented.

Brief Description of the Drawings

[0021]

Figure 1

Figure 2A

Figure 2B

Figure 3A

Figure 3B

Figure 3C

Figure 3D

Figure 4A

Figure 4B

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11A

Figure 11B

Figure 12A

Figure 12B

Figure 13

Figure 14A

Figure 14B

Embodiments for Carrying Out the Invention

[0022] Hereinafter, the present invention will be described in detail with appropriate reference to the drawings. The drawings used in the following description may show, for the sake of clarity, the characteristic parts enlarged for convenience, and the dimensional ratios of each component may be different from the actual ones. The dimensions and the like exemplified in the following description are merely examples, and the present invention is not limited thereto, and it can be appropriately modified and implemented within the scope in which the effects of the present invention can be achieved. Hereinafter, unless otherwise specified, the configuration described in one embodiment may be applied to other embodiments.

[0023] (Sample Holding Unit) FIG. 1 is a perspective schematic view of an example of a sample holding unit according to an embodiment of the present invention. FIG. 2A is a perspective schematic view of a cylindrical mounting table among the sample clamping and fixing portion and the cylindrical mounting table that constitute the sample holding unit, and FIG. 2B is a plan schematic view of the sample clamping and fixing portion. FIG. 3A is a plan schematic view of a first sample clamping plate among the four components (first sample clamping plate, second sample clamping plate, spring member, and frame member) that constitute the sample clamping and fixing portion, FIG. 3B is a plan schematic view of the second sample clamping plate, FIG. 3C is a plan schematic view of the spring member, and FIG. 3D is a plan schematic view of the frame member. FIG. 4A is a plan schematic view of the sample holding unit, and FIG. 4B is a cross-sectional schematic view taken along line A-A of FIG. 4A.

[0024] As shown in FIG. 1, a sample holding unit 1000 used in an ion milling apparatus includes a sample clamping and fixing portion 100 and a cylindrical mounting table 200. The sample holding unit 1000 is fixedly used in the ion milling apparatus. The sample holding unit 1000 may be processed (for example, a threaded portion) for fixing within the ion milling apparatus.

[0025] As used herein, the "ion milling apparatus" generally refers to an apparatus having a function of irradiating and cutting a surface or cross-section of a substance with an argon ion beam, and is not limited to those for sample preparation for a transmission electron microscope.

[0026] The sample clamping and fixing portion 100 includes a first sample clamping plate 110 having a first through hole 111 in the central portion and a groove 112 formed along the first through hole 111 for placing the outer peripheral portion of the sample, and a second sample clamping plate 120 having a second through hole 121 in the central portion and sandwiching the outer peripheral portion of the sample together with the first sample clamping plate 110.

[0027] The sample clamping and fixing part 100 shown in Fig. 1 further has a sample fixing member 130 that fixes the outer peripheral part of the sample in a state of being sandwiched between the first sample clamping plate 110 and the second sample clamping plate 120. The sample fixing member 130 shown in Fig. 1 is a spring member that can fix the sample by elastic force, but a member that fixes by a known elastic force other than the spring member or a member that fixes by a known method other than elastic force may also be used.

[0028] The sample clamping and fixing part 100 shown in Fig. 1 further has a frame-shaped member 140 that supports the outer peripheral parts of the first sample clamping plate 110 and the second sample clamping plate 120 and has a sample fixing member locking groove (spring locking groove) 141 in which the sample fixing member 130 is locked.

[0029] When the sample is set in the groove 112 and the outer peripheral part of the sample is sandwiched between the first sample clamping plate 110 and the second sample clamping plate 120, the flat surface 113 of the first sample clamping plate 110 and the flat surface 123 of the second sample clamping plate 120 will be aligned.

[0030] In the sample clamping and fixing part 100 shown in the figure, an example having the frame-shaped member 140 is shown, but a configuration without using the frame-shaped member 140 may also be used.

[0031] The first sample clamping plate 110, the second sample clamping plate 120, the spring member 130, and the frame-shaped member 140, which are the four components constituting the sample clamping and fixing part 100, are preferably made of a material that is difficult to be cut. Examples of such materials include SUS and molybdenum (Mo).

[0032] The depth of the groove 112 that the sample clamping first plate 110 has along the first through hole 111 is designed according to the stability (firmness of fixation, difficulty of movement) of the sample to be placed. For example, in the case of a TEM sample, it can be set to about 30 μm to 150 μm according to the thickness of the TEM sample. For example, for a sample that is prone to cracking depending on the material of the sample, a groove 112 with a depth of 70 μm can be prepared, for a sample that is less prone to cracking, a groove 112 with a depth of 50 μm can be prepared, and for glass used for calibration of an ion milling device, a groove 112 with a depth of 100 μm can be prepared.

[0033] The sample clamping first plate 110 is disc-shaped, but is not limited to being disc-shaped. When the sample clamping first plate 110 is disc-shaped, the diameter can be, for example, 3 mm or more.

[0034] The diameter of the first through hole 111 of the sample clamping first plate 110 can be, for example, 0.3 to 2.5 mm. Also, the diameter of the inner wall of the groove 112 (the diameter of the recess formed by the groove 112) can be, for example, 3.0 to 3.1 mm.

[0035] The thickness of the sample clamping first plate 110 can be, for example, 0.1 to 0.2 mm.

[0036] The diameter of the second through hole 121 of the sample clamping second plate 120 can be, for example, 0.4 to 2.9 mm. If the diameter of the second through hole 121 is smaller than the diameter of the inner wall of the groove 112, the sample can be held.

[0037] The sample clamping second plate 120 is also disc-shaped, but is not limited to being disc-shaped. When the sample clamping second plate 120 is disc-shaped, the diameter can be, for example, 3 mm or more.

[0038] The thickness of the sample clamping second plate 120 can be, for example, 0.1 to 0.2 mm.

[0039] As shown in FIG. 3C, the spring member 130 is preferably a wire spring. The wire spring can have various shapes. When the wire spring 130 shown in FIG. 3C is fixed in the spring locking groove 141 of the frame member 140, it is performed in a state where the angle θ formed by the pair of spring arms 131 and 132 that bear the elastic force is small.

[0040] In the sample holding unit 1000, although the configuration in which the wire spring 130 is locked by the spring locking groove 141 of the frame member 140 is shown, it may also be configured such that a spring locking groove is provided on the inner wall of the cylindrical portion 210 of the cylindrical mounting table 200 to lock the wire spring 130.

[0041] The frame member 140 includes an annular mounting surface 142 on which the outer peripheral portions of the sample clamping first plate 110 and the sample clamping second plate 120 are mounted, a spring locking groove 141 in which the spring member 130 is locked, and locking convex portions 143a, 143b, and 143c that are locked to the locking groove 211 (see FIG. 2A) provided at the upper end of the cylindrical portion 210 of the cylindrical mounting table 200.

[0042] Among the three locking convex portions 143a, 143b, and 143c, the locking convex portion 143c has a longer radial length than the other two locking convex portions 143a and 143b. For this reason, the locking convex portions 143a and 143b are locked to the locking groove 211 provided at the upper end of the cylindrical portion 210 without protruding radially from the outer surface of the cylindrical portion 210, while the locking convex portion 143c is locked in a state of protruding radially from the outer surface of the cylindrical portion 210 (see FIG. 1).

[0043] By gripping the protruding locking convex portion 143c, the sample clamping and fixing portion 100 can be attached to and detached from the cylindrical mounting table 200. After performing ion milling on the substrate side of the sample S with a thin film formed on the substrate, the frame-shaped member 140 is taken out from the cylindrical mounting table 200, and the frame-shaped member 140 is set on the cylindrical mounting table 200 in a turned-over state, so that processes such as applying an ion beam to the film surface of the thin film of the sample S for cleaning can be performed. In this way, without removing the sample S from the sample clamping and fixing part 100, the surface on the opposite side of the surface where the ion milling of the sample S is performed can be processed while the sample S is clamped between the sample clamping first plate 110 and the sample clamping second plate 120.

[0044] The frame-shaped member 140 is configured to include three locking convex portions, but is not limited to three. Also, while the number of locking convex portions of the frame-shaped member 140 is three, the number of locking grooves 211 provided at the upper end of the cylindrical portion 210 is six. Thus, the number of locking convex portions of the frame-shaped member 140 and the number of locking grooves 211 provided at the upper end of the cylindrical portion 210 may be different or the same.

[0045] The sample clamping first plate, the sample clamping second plate, the spring member, and the frame-shaped member can be assembled and handled without removing the sample. Therefore, by using the sample clamping and fixing part provided in the present invention, it is possible to observe with a normal optical microscope during an intermediate stage of sample processing (for example, ion milling). That is, since the sample clamping and fixing part provided in the present invention can be taken out from the cylindrical mounting table 200 and handled with the sample attached, it is not affected by the height of the cylindrical mounting table 200, and thus can be adjusted to the focal length of any optical microscope. For this reason, even if observation with an optical microscope is accompanied during ion milling, the ion milling can be interrupted and continued without displacement of the sample. Usually, when fabricating a TEM sample, the thickness is grasped using interference fringes simply with an optical microscope before TEM observation, but by using the sample clamping and fixing part provided in the present invention, the process can be easily performed with a normal optical microscope.

[0046] On the one hand, for example, when using the sample fixing jig disclosed in Patent Document 1, the sample (reference numeral 24 in FIG. 4 of Patent Document 1) is sandwiched and fixed by a sample holding member (reference numeral 4 in FIG. 1 of Patent Document 1) and a sample cover (reference numeral 16 in FIG. 4 of Patent Document 1). The sample holding member is configured to be supported by support members (reference numerals 8a, 8b, 8c in FIG. 1 of Patent Document 1) whose other ends are fixed to a pedestal (reference numeral 6 in FIG. 1 of Patent Document 1). In this configuration, when attempting to observe with an optical microscope while the sample is sandwiched between the sample holding member and the sample cover, first, it is necessary to remove the sample holding member from the support member. However, it is not easy to do so without causing displacement of the sample. Also, in order to prevent this displacement of the sample, when observing the sample with an optical microscope without removing the sample holding member from the support member, it is necessary to prepare a special optical microscope.

[0047] In addition, in the sample clamping and fixing part provided in the present invention, since the sample can be handled without removing the sample while the sample clamping first plate, the sample clamping second plate, the spring member, and the frame-shaped member are assembled, it is also possible to turn over the sample clamping and fixing part and install it on the cylindrical mounting table, and the front and back of the sample can be processed.

[0048] The cylindrical mounting table 200 includes a cylindrical part 210 and a mounting part 220 disposed on one end side of the cylindrical part 210 and having a third through hole 221 in the central part. Different from the conventional clamp-type sample holding unit shown in FIGS. 14A and 14B, the sample holding unit according to the present embodiment can prevent the substance on the substrate side of the sample S from flowing into the film surface side of the thin film of the sample S until a small hole is opened by ion milling after setting the sample S in the sample holding unit, and can prevent the film surface of the thin film of the sample S from being contaminated.

[0049] The cylindrical mounting table 200 is preferably made of a material having high thermal conductivity. For example, aluminum (Al), copper (Cu), etc. can be exemplified.

[0050] The placement unit 220 is arranged horizontally (parallel to the horizontal cross-section of the cylindrical part 210), but it may be arranged inclined with respect to the horizontal cross-section of the cylindrical part 210.

[0051] (Ion milling device) The ion milling device according to the embodiment of the present invention includes the sample holding unit according to the embodiment of the present invention as described above.

[0052] (Method for producing a TEM sample) The method for producing a TEM sample according to the embodiment of the present invention produces a transmission electron microscope sample using the sample holding unit according to the embodiment of the present invention as described above.

Example

[0053] Hereinafter, the present invention will be described in more detail using examples. However, the present invention is not limited to the examples shown below.

[0054] (Example) In the example, a sample having the film structure shown in FIG. 5 was evaluated for a transmission electron microscope sample obtained by performing ion milling using the sample holding unit of the present invention.

[0055] FIG. 5 is a cross-sectional view showing the film structure of the thin film of the sample on which ion milling was performed. For the sample, NiTa was formed as a heat sink layer on a thermally oxidized Si substrate to a thickness of 100 nm (first step), then oxygen exposure was performed (second step), and Cr was formed to a thickness of 50 nm at room temperature (third step). Thereafter, the obtained sample was heat-treated (fourth step) and returned to room temperature. After forming MgO to a thickness of 10 nm at room temperature (fifth step), the substrate temperature was set again to 600° C. and FePt was formed to a thickness of 5 nm (sixth step). It is a cross-sectional view showing the film structure of the thin film of the sample on which ion milling was performed.

[0056] Summarizing the details of the sputtering conditions and processing conditions for thin film formation in the first to sixth steps, they are as follows. The sputtering apparatus used was a revolver type sputtering apparatus ES3050 (manufactured by Eiko Corporation).

[0057] Step 1 (NiTa film formation) : Film thickness: 100 nm Substrate temperature: Room temperature DC voltage: 0.01 kW Ar gas: 10 ccm Ar gas pressure: 7 mTorr

[0058] Step 2 (oxygen exposure): Oxygen amount: 2 ccm Time: 2 minutes and 24 seconds O2 gas pressure: 0.1 mTorr

[0059] Step 3 (Cr film formation): Film thickness: 50 nm Substrate temperature: Room temperature DC voltage: 0.01 kW Ar gas: 10 ccm Ar gas pressure: 7 mTorr

[0060] Step 4 (heat treatment): Substrate temperature: 500 °C Time: 30 minutes

[0061] Step 5 (MgO film formation): Film thickness: 10 nm Substrate temperature: Room temperature DC voltage: 0.01 kW Ar gas: 38.2 ccm Ar gas pressure: 11.5 mTorr

[0062] Step 6 (FePt film formation): Film thickness: 5 nm Substrate temperature: 600 °C DC voltage: 0.01 kW Ar gas: 10 ccm Ar gas pressure: 7 mTorr

[0063] Next, ion milling was performed on the obtained sample from the side of the thermally oxidized Si substrate. The ion milling apparatus used was the TEM Mill M1051 (manufactured by Fischione Instruments).

[0064] The ion milling conditions are as follows; 4 KV: 3 hours 20 minutes 1 KV: 1 minute 30 seconds 0.5 KV: 2 minutes (cleaning) 0.3 KV: 5 seconds (film surface cleaning) All of the above steps were performed at an angle of 8°.

[0065] Figure 6 shows the XRD patterns when the temperature of the fourth step (heat treatment) was changed after the third step (Cr film formation). The XRD patterns were measured using a SmartLab (manufactured by Rigaku Corporation). Since no diffraction line from Cr(110) was observed in the heat treatment at 500 °C, this condition was taken as the optimal heat treatment temperature.

[0066] Figure 7 shows the magnetization curves of the thin film fabricated at the optimal heat treatment temperature (500 °C). The magnetization curve with a large hysteresis was obtained when the magnetic field was applied perpendicular to the film, and the magnetization curve with a small hysteresis was obtained when the magnetic field was applied in the in-plane direction. The thin film shows strong perpendicular anisotropy and a high coercive force exceeding 2 T.

[0067] Figures 8(a) and 8(b) are, respectively, the bright-field image and the selected-area diffraction image of the microstructure observed by a transmission electron microscope using an in-plane TEM sample fabricated using the ion milling apparatus with the sample holding unit of the present invention. It can be seen from the bright-field image that the FePt particles are uniformly dispersed with a particle size of about 50 nm, and further from the diffraction contrast that the particle size of Cr is about 100 nm. From the selected-area diffraction image, it can be seen that the thin film is strongly (001)-oriented because the diffraction intensity of FePt(001) is very weak. Although the substrate is a Si single crystal, no diffraction spots due to the single crystal are obtained, indicating that the TEM sample has been thinned to the desired thickness.

[0068] Figures 9(a) and 9(b) are HAADF-STEM (High-Angle Annular Dark Field Scanning TEM) images. Figure 9(a) shows the tissue observed at low magnification, and Figure 9(b) shows the tissue observed at high magnification. FePt particles are clearly observed, and the grain boundary phase of Cr is also clearly observed.

[0069] Figures 10(a) to 10(e) show element maps observed using EDS. Figure 10(a) is a HAADF-STEM image, Figure 10(b) is an Fe map, Figure 10(c) is a Pt map, Figure 10(d) is a Ni map, and Figure 10(e) is a Ta map. It can be seen that the FePt particles are uniformly dispersed, and Ni and Ta are diffusing along the grain boundaries of Cr. Note that the apparent diffusion of Ta into the FePt particles is an artifact.

[0070] (Comparative Example) In the comparative example, a sample having the film structure shown in Figure 5 was ion milled using a conventional clamp-type sample holding unit as shown in Figures 14A and 14B, and the obtained transmission electron microscope sample was evaluated.

[0071] Figure 11A is a photograph taken from the film surface side of the TEM sample of the comparative example, and Figure 11B is a photograph taken from the film surface side of the TEM sample of the example. In the TEM sample of the comparative example, the film surface was discolored yellow, and contamination due to redeposition was observed. On the other hand, it was found that the TEM sample of the example maintained a metallic color and the contamination due to redeposition was suppressed.

[0072] Figures 12A and 12B are HAADF-STEM images of the TEM sample of the comparative example. In both Figures 12A and 12B, the contours of the FePt particles are less clear compared to the TEM sample of the example. This is considered to be due to the contamination caused by redeposition.

[0073] Figs. 13(a) to 13(e) show element maps observed using EDS. Fig. 13(a) is a HAADF-STEM image, Fig. 13(b) is an Fe map, Fig. 13(c) is a Pt map, Fig. 13(d) is a Ni map, and Fig. 13(e) is a Ta map. Although the FePt particles are observed relatively clearly, the grain boundary diffusion part surrounded in Fig. 13(a) is not clearly observed in the Ni map and the Ta map.

[0074] As described above, in the examples, since a sufficiently thin region remains compared to the comparative examples, high-precision observation can be performed, and the effect of using the sample holding unit of the present invention could be shown.

Description of Reference Numerals

[0075] 100 Sample clamping and fixing part 200 Cylindrical mounting table 1000 Sample holding unit

Claims

1. A sample holding unit used in an ion milling apparatus, comprising: a first sample clamping plate having a first through hole in a central portion thereof, and a groove formed along the first through hole for placing an outer peripheral portion of a sample; a second sample clamping plate having a second through hole in a central portion thereof, and clamping the outer peripheral portion of the sample together with the first sample clamping plate; a cylindrical mounting table having a cylindrical portion, a mounting portion disposed at one end side of the cylindrical portion, the mounting portion having a third through hole in a central portion thereof and for placing the first sample clamping plate and the second sample clamping plate in a state where the outer peripheral portion of the sample is clamped.

2. The sample holding unit according to claim 1, further comprising a spring member capable of fixing the sample by an elastic force in a state where the outer peripheral portion of the sample is clamped between the first sample clamping plate and the second sample clamping plate.

3. The sample holding unit according to claim 2, further comprising a frame-shaped member having a spring locking groove for supporting an outer peripheral portion of either one of the first sample clamping plate and the second sample clamping plate and for locking the spring member, and the frame-shaped member is placed on the mounting portion of the cylindrical mounting table.

4. The sample holding unit according to claim 3, wherein the frame-shaped member includes a locking convex portion capable of being locked in a locking groove provided at one end of the cylindrical portion.

5. The sample holding unit according to claim 4, wherein the locking convex portion has a radial length protruding radially from an outer surface of the cylindrical portion in a state of being locked in the locking groove provided at one end of the cylindrical portion.

6. An ion milling apparatus comprising the sample holding unit according to any one of claims 1 to 5.

7. A method for manufacturing a TEM sample, comprising manufacturing a sample for a transmission electron microscope using the sample holding unit according to any one of claims 1 to 5.

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