RF reference measurement circuit for direct drive system that supplies power to generate plasma in substrate processing system

Abstract

SOLUTION: A substrate processing system includes a driver circuit, an RF reference measurement circuit, and a make-break connector. The driver circuit generates an RF drive signal at a first RF frequency, the RF reference measurement circuit includes an LC circuit having an input impedance and an output impedance, the output of the LC circuit is connected to an RF power meter and a dummy load, the make-break connector connects the driver circuit to the RF reference measurement circuit and one of the processing chamber loads including components of the substrate processing system, the output impedance of the driver circuit matches the impedance of the input impedance of the LC circuit, the output impedance of the driver circuit does not match the impedance of the RF power meter and the dummy load, and the LC circuit matches the impedance of the driver circuit to the RF power meter and the dummy load.SELECTED DRAWING: Figure 3A

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims the benefit of priority of U.S. Provisional Patent Application No. 62 / 991,960, filed on Mar. 19, 2020. The entire disclosure of the above - mentioned related application is incorporated herein by reference.

[0002] The present disclosure relates to a substrate processing system, and more particularly, to a radio frequency (RF) reference measurement circuit for measuring an RF reference generated by a direct - drive system that supplies RF power to the substrate processing system.

Background Art

[0003] The description of the background art provided herein is for the purpose of generally presenting the content of the present disclosure. The research by the inventors named herein is not to be regarded as prior art against the present disclosure, either explicitly or implicitly, to the extent that such description is not within the scope described in this background art section and cannot be regarded as prior art at the time of filing.

[0004] Substrate processing systems are generally used to etch thin films on substrates such as semiconductor wafers. Etching typically includes either wet chemical etching or dry etching. Dry etching may be performed using a plasma generated by inductively coupled plasma (ICP). A magnetic field is generated by one or more induction coils disposed adjacent to a dielectric window outside the processing chamber. The process gas flowing within the processing chamber is ignited by the magnetic field to generate a plasma. Also, in some applications, RF bias power may be supplied to an electrode within the substrate support.

[0005] The frequency of the RF plasma power or the RF bias power can be varied to provide additional process control. Further, the magnitude or level of the RF plasma power or the RF bias power can be varied during processing to provide additional process control. Changes in the RF plasma power or level and / or changes in the RF bias power or level can cause a change in the impedance seen by the drive circuit. When an impedance mismatch occurs between the load and the drive circuit, power is reflected and is inefficient.

SUMMARY OF THE INVENTION

[0006] A substrate processing system includes a drive circuit, an RF reference measurement circuit, and a make-break connector. The drive circuit is configured to generate an RF drive signal at a first RF frequency. The RF reference measurement circuit includes an LC circuit having an input impedance and an output impedance. The output of the LC circuit is configured to be connected to an RF power meter and a dummy load. The make-break connector is configured to connect the drive circuit to one of the RF reference measurement circuit and a processing chamber load including components of the substrate processing system. The output impedance of the drive circuit matches the impedance of the input impedance of the LC circuit. The output impedance of the drive circuit does not match the impedance of the RF power meter and the dummy load. The LC circuit is configured to match the impedance of the drive circuit to the RF power meter and the dummy load.

[0007] In another feature, the RF reference measurement circuit includes a first conductor connected to the output of the LC circuit, and the RF power meter is connected to the first conductor.

[0008] In another feature, the RF reference measurement circuit includes a second conductor connected to the output of the RF power meter, and the dummy load is connected to the second conductor.

[0009] In another feature, the output impedance of the drive circuit and the input impedance of the LC circuit are in the range of 0.1 Ω to 10 Ω.

[0010] In other features, the output impedance of the drive circuit and the input impedance of the LC circuit are in the range of 0.5 Ω to 2 Ω.

[0011] In other features, the output impedance of the LC circuit, the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 20 Ω to 100 Ω.

[0012] In other features, the output impedance of the LC circuit, the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in the range of 45 Ω to 55 Ω.

[0013] In other features, the LC circuit includes a first connector connected to a make-break connector, an inductor having one end connected to the first connector, a first capacitor connected in series to the opposite end of the inductor, and a second capacitor connected in parallel between the opposite end of the inductor and the first capacitor.

[0014] In other features, the first capacitor includes one or more ceramic capacitors having a first terminal connected to the second capacitor and a second terminal connected to the second connector.

[0015] In another feature, the second conductor includes a coaxial cable.

[0016] In another feature, the second capacitor includes one or more vacuum capacitors.

[0017] In other features, the input impedance of the LC circuit is in the range of 0.5 Ω to 2 Ω, and the output impedance of the LC circuit is in the range of 45 Ω to 55 Ω.

[0018] In another feature, the first RF frequency is in the range of 1.8 MHz to 2.2 MHz.

[0019] In other features, the LC circuit includes a first connector connected to a make-break connector, an inductor having one end connected to the first connector, a first capacitor connected in series to the opposite end of the inductor, and a second capacitor connected in parallel to the opposite end of the first capacitor.

[0020] In another feature, the first capacitor and the second capacitor include one or more vacuum capacitors.

[0021] In another feature, the first RF frequency ranges from 12.35 MHz to 13.65 MHz.

[0022] In other features, the make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, and a connector removably attached to the second conductor and configured to connect the second conductor to an RF reference measurement circuit and not to a drive circuit. The connector is T-shaped and includes a body connected to the second conductor and a cylindrical portion extending from the body and including a cavity. The cavity of the cylindrical portion is configured to connect to an RF reference measurement circuit.

[0023] In other features, the make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, and a connector removably attached to the second conductor and configured to connect the second conductor to a drive circuit and not to an RF reference measurement circuit. The connector includes a body, a bore within the body, and a fastener extending through the bore to connect the body to the second conductor.

[0024] In other features, the make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, and a connector removably attached to the second conductor and configured to connect the second conductor to one of an RF reference measurement circuit and a drive circuit. The connector includes a T-shaped connector.

[0025] In other features, the T-shaped connector includes a first leg and a second leg each including a first and a second cavity. The first leg and the second leg are slidably received on the second conductor. The T-shaped connector includes a third leg disposed in a transverse direction with respect to the first leg and the second leg and including a cavity configured to connect to the RF reference measurement circuit.

[0026] In other features, the T-shaped connector includes a body including a bore, a fastener extending through the bore for connecting the body to the second conductor, and a cylindrical portion extending from the body and including a cavity configured to connect to the RF reference measurement circuit.

[0027] In other features, the cylindrical portion has an axis and the fastener is connected in a transverse direction with respect to the axis.

[0028] In other features, the cylindrical portion has an axis and the fastener is connected in a direction parallel to the axis.

[0029] Further areas applicable to the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0030] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0031]

Figure 1

[0032]

Figure 2A

Figure 2B

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Figure 3A

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Figure 3B

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Figure 4

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Figure 5

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Figure 6

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Figure 7

[0039]

Figure 8A

Figure 8B

[0040]

Figure 9A

Figure 9B

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Figure 10A

Figure 10B

[0042]

Figure 11

[0043]

Figure 12A

Figure 12B

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Figure 13

[0045]

Figure 14

[0046] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

DETAILED DESCRIPTION OF THE INVENTION

[0047] In some applications, the RF frequency of the RF source power or RF bias power supplied to the ICP coil and / or the electrodes within the substrate support is switched between two or more frequencies and / or two or more pulse levels. RF pulses at multiple frequencies and / or multiple levels are shown and described in U.S. Patent No. 9,515,633 to the same applicant entitled "Transformer-Coupled Capacitive Tuning Circuit with High-Speed Impedance Switching for a Plasma Etching Chamber", the entire disclosure of which is incorporated herein by reference.

[0048] In these systems, the impedance of the RF generator is matched to the load (such as the induction coil and the plasma, or the electrode and the plasma). However, the impedance of the load changes due to changes in the plasma state, changes in the pulse level, and / or various other factors. When impedance mismatch occurs, power is reflected by the load and is inefficient. Adjusting the circuit using a variable capacitor is difficult due to the amount of time required to change the value of the capacitance for the switching period between frequency changes and / or changes between levels.

[0049] To mitigate some of the foregoing problems, an RF direct drive circuit having a low output impedance can be used. In some examples, the impedance of the RF direct drive circuit is primarily resistive and has a relatively low resistance (e.g., about 1 Ω, etc.). For example, direct drive circuits and hybrid direct drive circuits are shown in U.S. Patent Application No. 16 / 007,481, filed on June 13, 2018, by the same applicant and entitled "Direct Drive RF Circuit for a Substrate Processing System", the entire disclosure of which is incorporated herein by reference. Further examples of direct drive circuits are shown and described in U.S. Patent Publication No. 2019 / 0007004, published on January 3, 2019, and entitled "High Gain Resonant Amplifier for Resistive Output Impedance", the entire disclosure of which is incorporated herein by reference.

[0050] To ensure that the substrate processing system can operate reliably within the desired operating parameters (such as non-uniformity), the RF power or RF bias output by the direct drive system should be measured periodically (or for each event) and calibrated as needed. However, it is difficult to measure the output of the direct drive circuit because it has a relatively low impedance compared to the impedance of commercially available and / or other existing coaxial cables, RF power meters, and / or dummy loads already located in the fab. Most existing coaxial cables, RF power meters, and / or dummy loads have an impedance of about 50 Ω. The systems and methods described herein are used to measure one or more parameters of the RF power and / or RF bias signals generated by an RF direct drive system.

[0051] The systems and methods according to the present disclosure include a make-break connector disposed between a direct drive circuit and a process chamber load (e.g., a process chamber and / or plasma components). The make-break connector connects the direct drive circuit to the process chamber load or to an RF reference measurement circuit including a dummy load. The RF reference measurement circuit includes an LC circuit having an input impedance matching the impedance of the direct drive circuit and an output impedance matching the impedance of a coaxial cable, an RF power meter, and the dummy load. Thereby, since measurement can be performed using an existing RF power meter, coaxial cable, and dummy load, costs can be reduced.

[0052] Referring now to FIG. 1, an example of a substrate processing system 10 according to the present disclosure is shown. The substrate processing system 10 includes an RF drive circuit 12. The RF drive circuit 12 may include an RF source and a matching network or the direct drive circuit described herein.

[0053] In some examples, a plenum 20 may be disposed between the coil 16 and the dielectric window 24 to control the temperature of the dielectric window 24 with a hot air flow and / or a cold air flow. The dielectric window 24 is disposed along one side of the process chamber 28. The process chamber 28 further includes a substrate support (or pedestal) 32. The substrate support 32 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chucks. A process gas is supplied to the process chamber 28, and a plasma 40 is generated within the process chamber 28. The plasma 40 etches the exposed surface of the substrate 34.

[0054] An RF bias may be provided to the electrodes within the substrate support 32 during operation using an RF drive circuit 52. The RF drive circuit 52 may include an RF source and a matching network or the direct drive circuit (described herein). At least one of the RF drive circuits 12 and / or 52 includes an RF direct drive circuit.

[0055] The process gas mixture may be supplied to the processing chamber 28 using the gas supply system 56. The gas supply system 56 may include a process gas and inert gas source 57, a gas metering system 58 such as valves and mass flow controllers, and a manifold 59. A gas such as air may be used to cool the coil 16 and the dielectric window 24. The heater / cooler 64 may be used to heat / cool the substrate support 32 to a predetermined temperature. The exhaust system 65 includes a valve 66 and a pump 67 to remove reactants from the processing chamber 28 by purge or evacuation. The etching process may be controlled using the controller 54. The controller 54 monitors system parameters and controls the supply of the gas mixture, plasma collisions, plasma maintenance and quenching, removal of reactants, supply of cooling gas, etc.

[0056] Referring now to FIGS. 2A and 2B, an example of an RF direct drive circuit 200 for supplying RF bias power or RF plasma power is shown. In FIG. 2A, the RF direct drive circuit 200 includes a clock 220 operating at one or more selected RF frequencies. The clock signal output by the clock 220 is input to the gate drive circuit 222. In some examples, the gate drive circuit 222 includes an amplifier 244 and an inverter amplifier 246 each having an input connected to the clock 220.

[0057] The output of the gate drive circuit 222 is input to the half-bridge circuit 238. In some examples, the half-bridge circuit 238 includes a first switch 240 and a second switch 242. In some examples, the first switch 240 and the second switch 242 include metal oxide semiconductor field effect transistors (MOSFETs). Each of the first switch 240 and the second switch 242 includes a control terminal and first and second terminals. The output of the amplifier 244 of the gate drive circuit 222 is input to the control terminal of the first switch 240. The output of the inverter amplifier 246 of the gate drive circuit 222 is input to the control terminal of the second switch 242.

[0058] The output node 230 is connected to a second terminal of a first switch 240 and a first terminal of a second switch 242. The first terminal of the first switch 240 is connected to a first DC power source 270. The second terminal of the second switch 242 is connected to a reference potential, such as ground.

[0059] The output node 230 is connected to the cathode 234 by an inductor 232. In some examples, a resistor R p and a capacitance C in series p may be used to model the impedance seen by the RF direct drive circuit 200 (e.g., plasma capacitance and resistance, capacitance and resistance of an electrode (or another component) in the substrate support, and / or other stray or parasitic capacitance and resistance).

[0060] The RF direct drive circuit of Figure 2B uses +V DC / 2 and -V DC 2A , the first DC power supply 270 and the second DC power supply 280 operate at half the voltage of the single DC power supply 270. In some examples, to obtain the same output RF power, both the first and second DC power supplies 270 and 280 operate at half the voltage of the single DC power supply 280 of FIG. 2A . In some examples, the first DC power supply 270 and the second DC power supply 280 operate at approximately the same magnitude but opposite polarity. As used herein, approximately the same refers to a difference in the magnitude of the DC voltage output by the first DC power supply 270 relative to the second DC power supply 280 being less than 20%, 5%, or 2%. The first DC power supply 270 is connected to a first terminal of the first switch 240. The second DC power supply 280 is connected to a second terminal of the second switch 242.

[0061] In some examples, current sensor 282 and voltage sensor 284 sense current and voltage at output node 230. Phase offset computer 290 receives the sensed current and voltage signals and generates a phase offset signal that is output to clock frequency adjustment device 292. Clock frequency adjustment device 292 generates a clock adjustment signal based on the phase offset signal. In other features, clock frequency adjustment device 292 increases the frequency of clock 220 when the current leads the voltage, and decreases the frequency of clock 220 when the voltage leads the current.

[0062] Referring now to FIGS. 3A and 3B, direct drive circuit 310 can be connected to a load 312, such as a component of the processing chamber, or to an RF reference measurement circuit 314 that performs measurements to evaluate the operation of direct drive circuit 310. In FIG. 3A, make-break connector 316 is configured to connect direct drive circuit 310 to load 312 during normal operation mode. Make-break connector 316 may include fasteners, conductors, and / or other hardware that are manually attached and / or removed to make and / or break the appropriate connection. During operation in the normal operation mode, direct drive circuit 310 drives load 312 as described above.

[0063] Periodically, or for each event, the output of the direct drive circuit is tested to confirm that the processing chamber is operating correctly. However, the dummy load, RF power meter, and coaxial cable connectors have a much higher impedance that does not match the output impedance of the direct drive circuit.

[0064] In FIG. 3B, make-break connector 316 is configured to connect direct drive circuit 310 to LC circuit 320 during RF reference measurement mode. The output of LC circuit 320 is connected to RF power meter 324. Conductor 326 connects RF power meter 324 to dummy load 328. In some examples, conductor 326 includes a coaxial cable, although other conductors can also be used.

[0065] The output impedance of the direct drive circuit 310 does not match the impedance of the conductor 326, the impedance of the RF power meter 324, and the impedance of the dummy load. In some examples, the output impedance of the direct drive circuit 310 is in the range of 0.1 ohm (Ω) to 5 Ω. In some examples, the output impedance of the direct drive circuit 310 is in the range of 0.5 ohm (Ω) to 2 Ω.

[0066] In some examples, the impedance of the conductor 326 and the RF power meter 324 is greater than the output impedance of the direct drive circuit 310. For example, the impedance of the conductor 326, the RF power meter 324, and the dummy load 328 may be in the range of 20 ohms (Ω) to 100 Ω. For example, the impedance of the conductor 320, the RF power meter 324, and the dummy load 328 may be in the range of 45 ohms (Ω) to 55 Ω. For example, the impedance of the conductor 320 and the RF power meter 324 may be 50 Ω.

[0067] Referring now to FIG. 4, the direct drive circuit 410 is shown in the RF reference measurement mode. The direct drive circuit 410 includes a first output and a second output in a first frequency range as well as a second frequency range. In some examples, the first frequency range is from 1.8 MHz to 2.2 MHz, although other frequency ranges are also possible. In some examples, the second frequency range is from 12.35 MHz to 13.65 MHz, although other frequency ranges are also possible.

[0068] The make-break connector 414 connects the first output of the direct drive circuit 410 to the LC circuit 420 during the first reference measurement mode or to the load 412 during the first direct drive mode. The LC circuit 420 is connected to the RF power meter 424 by a conductor 426. The conductor 426 connects the RF power meter 424 to the dummy load 428. In some examples, the conductor 426 includes a coaxial cable.

[0069] The make-break connector 434 connects the second output of the direct drive circuit 410 to the LC circuit 440 during the second RF reference measurement mode or to a load 432 such as a component of the processing chamber during the second direct drive mode. In some examples, the loads 412 and 432 are the same load or separate loads. The LC circuit 440 is connected to the RF power meter 444 by a conductor 446. The conductor 446 connects the RF power meter 444 to a dummy load 448. In some examples, the conductor 446 includes a coaxial cable.

[0070] Referring now to FIG. 5, an example of the LC circuit 440 in the first frequency range is shown. The LC circuit 420 includes an inductor L1 (having a resistance value R L1 connected in series with a capacitor C1. A capacitor C2 is connected between the inductor L1 and the capacitor C1. In some examples, the LC circuit 420 has an input impedance that matches the impedance of the direct drive circuit and an output impedance that matches the impedance of the connector, RF power meter, and dummy load.

[0071] Referring now to FIG. 6, an example of the LC circuit 420 in the second frequency range is shown. The LC circuit 440 includes an inductor L2 (having a resistance R L2 connected in series with a capacitor C3. A capacitor C4 is connected between the capacitor C3 and the output of the LC circuit 440. In some examples, the LC circuit 440 has an input impedance that matches the impedance of the direct drive circuit and an output impedance that matches the impedance of the connector, RF power meter, and load.

[0072] Referring now to FIG. 7, an example of the direct drive system 700 is shown. The direct drive system 700 includes a plurality of stacked enclosures that define an upper level 704, a middle level 706, and a lower level 708. In some examples, the direct drive system 700 may be disposed above the processing chamber. In some examples, the side walls and the top and bottom surfaces are made of a conductive material such as aluminum.

[0073] The upper level 704 includes a housing 710 that houses the direct drive circuit 712 described above. In some examples, the intermediate level 706 includes a plurality of housings. The housing 713-1 houses the first RF reference measurement circuit 714-1 and includes a connector 716-1 (such as a coaxial connector) located on the outer wall of the housing 713-1. The intermediate level 706 further includes a housing 713-2 that houses the second RF reference measurement circuit 714-2 and includes a connector 716-2 (such as a coaxial connector) located on the outer wall of the housing 713-2.

[0074] In some examples, the housing 713-1 is arranged in a parallel and spaced relationship with respect to the housing 713-2. In some examples, the intermediate level 706 may include one or more additional housings (such as the housing 718). In some examples, one or more of the housings of the intermediate level 706 include one or more fans 720 for circulating air within the housing.

[0075] The lower level 708 includes a housing 724-1 that houses the first make-break connector 726-1. The first make-break connector 726-1 connects one of the outputs of the direct drive circuit 712 to the first RF reference measurement circuit 714-1 or a component of the processing chamber (such as an induction coil or electrode within the substrate support), or disconnects the direct drive circuit 712 from both the first RF reference measurement circuit 714-1 and the components of the processing chamber.

[0076] The lower level 708 further includes another housing 724-2 that houses the second make-break connector 726-2 for connecting one of the outputs of the direct drive circuit 712 to the second RF reference measurement circuit 714-2 or a component of the processing chamber, or for disconnecting the direct drive circuit 712 from both the second RF reference measurement circuit 714-2 and the components of the processing chamber.

[0077] Referring now to FIGS. 8A and 8B, a first RF reference measurement circuit 714-1 for a direct drive system is shown. The first RF reference measurement circuit 714-1 includes a plate 810 electrically connected to a connector 716-1. The plate 810 is also connected to a first terminal of one or more capacitors 816 connected in parallel to the plate 810. A second terminal of the one or more capacitors 816 is connected to a plate 812. In some examples, the capacitor 816 includes a ceramic capacitor, but other types of capacitors can also be used.

[0078] One or more capacitors 820 are connected in parallel between the plate 812 and the reference potential. For example, the reference potential may be provided by the grounded lower surface of the housing. In some examples, the capacitor includes a vacuum capacitor. An extension 824 of the plate 812 is connected to one end of an inductor 830. In some examples, the inductor 830 includes a conductive material wound in a helical coil. In some examples, the conductive material includes copper or silver (Ag)-plated copper. The opposite end of the inductor 830 is connected to one end of a plate 842. In some examples, the windings of the inductor 830 are held in a spaced relationship by a separator 834 extending therebetween. In some examples, the separator 834 includes a body 835 and a plurality of protrusions 836 extending at a position spaced from the body 835. The ends of the plurality of protrusions 836 are located between the windings of the inductor 830. In some examples, the separator 834 is made of a non-conductive material such as plastic, but other materials can also be used. In some examples, the separator 834 is made of polyetheretherketone (PEEK). The opposite end of the plate 842 is connected to a connector 844. The connector 844 extends through the housing to a connector 850. In some examples, the connector 850 includes a male connector having a cylindrical body.

[0079] Referring now to FIGS. 9A and 9B, a second RF reference measurement circuit 714-2 for a direct drive system is shown. The second RF reference measurement circuit 714-2 includes a plate 910 connected to a connector 716-1. One or more capacitors 912 are connected in parallel between the plate 910 and a reference potential (such as ground, e.g., a grounded housing wall). An extension 924 of the plate 910 is connected to one end of an inductor 930. The opposite end of the inductor 930 is connected to one end of a plate 942. In some examples, the windings of the inductor 930 are separated by a separator 934.

[0080] The opposite end of the plate 942 is connected to a connector 944. The connector 944 extends through the housing to a connector 950. In some examples, the connector 950 includes a male connector such as a cylindrical conductive portion.

[0081] Referring now to FIGS. 10A and 10B, an upper portion of a make-break connector 1010 for a direct drive system is shown. The make-break connector 1010 includes a conductor 1020 surrounded by one or more ring portions 1022 and 1024 and a base portion 1024. In some examples, one or more of the ring portions 1022 and 1024 have a centering function for a female connector of a direct drive circuit. In some examples, the conductor 1020 includes a cylindrical conductor portion, although other shapes may be used.

[0082] A conductor 1028 extends downward from the base portion 1024 and is electrically connected to the conductor 1020. In some examples, the conductor 1028 has a cylindrical shape and includes a mounting portion 1029 configured to receive a T-shaped connector 1040. In some examples, the mounting portion 1029 has a flat surface configured to mate with a flat surface of a body 1042 of the T-shaped connector 1040.

[0083] The T-shaped connector 1040 extends from a body 1042 and includes a cylindrical portion 1048 that forms a central cavity 1050. In some examples, the central cavity 1050 is cylindrical and configured to receive one of the connectors 850, 950. In some examples, the T-shaped connector 1040 includes one or more fasteners 1044, such as threaded bolts, that are received within a bore 1030 to attach the T-shaped connector 1040 to the conductor 1028. In some examples, the fasteners 1044 extend in a transverse direction relative to the axis of the central cavity 1050. While a particular configuration for the make-break connector 1010 is shown, other configurations are also usable.

[0084] Referring now to FIG. 11, a make-break connector 1100 for a direct drive system is shown. The connector 1150 is shown in a direct drive mode (connected) and an RF reference measurement mode (disconnected). In some examples, the connector 1150 includes a rectangular body and one or more flanges 1155 that extend along opposite side surfaces of the rectangular body. One or more fasteners 1154 connect and position the connector 1150 relative to the conductor 1028.

[0085] The connector 1150 is attached or coupled to a strap 1120. The strap 1120 is connected to a capacitor 1124 whose one end is supported (fixedly or rotatably) by a support bracket 1125. The opposite end of the capacitor 1124 is connected to one end of a strap 1227 and a capacitor 1128 (connected to a bracket 1170). The opposite end of the capacitor is connected to the support bracket 1125. In some examples, the bracket 1170 is connected to a housing wall. In some examples, the strap 1120 is rotatable relative to the attachment bracket 1125. The conductor 1134 is connected to components of the processing chamber by conductors 1180, 1182.

[0086] Referring now to FIGS. 12A and 12B, an upper portion of another example of a make-break connector 1200 for a direct drive system is shown. Instead of using a conductor 1028 with an attachment portion 1029, a conductor 1210 and a T-shaped slide connector 1220 are used. In some examples, the conductor 1210 has a cylindrical shape. The conductor 1210 is slidably received by the conductive cylindrical inner cavity of the T-shaped slide connector 1220. The T-shaped slide connector 1220 includes a first leg 1230 and a second leg 1232 that are axially aligned. The first leg 1230 is connected to the conductor 1210. The T-shaped slide connector 1220 includes a third leg 1234 that is disposed transverse to the first leg 1230 and the second leg 1232. The conductive cavity 1238 of the third leg 1234 is configured to connect to one of the connectors 850, 950 when disposed in the RF reference measurement mode.

[0087] In FIG. 12A, when disposed in the direct drive mode, the second leg 1232 is shown to connect to a mating connector 1242 (best seen in FIG. 12B) that extends from a strap 1120 (instead of the connector 1150). The third leg 1234 is disconnected from the connectors 850, 950.

[0088] In FIG. 12B, when in the RF reference measurement mode, the second leg 1232 is disconnected from the mating connector 1242 and the third leg 1234 is connected to one of the connectors 850, 950. As can be appreciated, the T-shaped slide connector 1220 enables rapid reconfiguration between the direct drive mode and the RF reference measurement mode.

[0089] Referring now to FIG. 13, the top of another make-break connector 1300 is shown in direct drive mode. (Similar to 1120, but with a different end configuration) The top of the strap 1304 is also shown. The strap 1304 includes an "L"-shaped end 1320 that includes a first portion 1322 and a second portion 1324. In some examples, the first portion 1322 is transverse to the second portion 1324. The first portion 1322 further includes one or more bores 1334 for receiving one or more threaded fasteners 1330, respectively. In FIG. 13, the strap 1304 is connected to the make-break connector 1300 in a plane that is transverse to the plane that includes the widest portion of the strap 1304 (in contrast to FIG. 11 which is parallel).

[0090] Referring now to FIG. 14, the top of the make-break connector 1300 is shown configured in RF reference measurement mode. The top of the strap 1304 is cut. In some examples, the strap 1304 rotates around the support bracket 1125 away from the top of the make-break connector 1300. The T-shaped connector 1410 includes an "L"-shaped end 1420 that includes a first portion 1422 and a second portion 1424. In some examples, the first portion 1422 is transverse to the second portion 1424. The first portion 1422 further includes one or more bores 1434 for receiving one or more threaded fasteners 1430, respectively. The T-shaped connector 1410 includes a cylindrical portion 1452 that forms an inner cavity 1454 for receiving one of the connectors 850 or 950. In this example, the fasteners are attached in a direction parallel to the axis of the cavity (different from other versions that are attached transversely). By adjusting the position of the fasteners, the T-shaped connector 1410 can be more easily attached.

[0091] The foregoing description is merely exemplary in nature and is in no way intended to limit the disclosure, its application, or its use. The broad teachings of the disclosure can be implemented in a variety of forms. Accordingly, while this disclosure includes specific examples, it will be apparent to those skilled in the art from consideration of the drawings, the specification, and the following claims that other changes, modifications, and variations are possible, and hence the true scope of the disclosure should not be limited to such examples. It should be understood that one or more steps within a method may be performed in a different order (or concurrently) without altering the principles of the disclosure. Further, although each embodiment has been described as having certain features, any one or more of these features described with respect to any embodiment of the disclosure may be implemented in and / or combined with any other embodiment, even if such combination is not explicitly described, i.e., the described embodiments are not mutually exclusive, and swapping one or more embodiments with each other remains within the scope of the disclosure.

[0092] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." In the above disclosure, when the relationship between a first element and a second element is described, unless explicitly described as "direct," the relationship can be not only a direct relationship with no other intervening elements between the first element and the second element, but also an indirect relationship with one or more intervening elements (spatially or functionally) between the first element and the second element. As used herein, the expression "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using a non-exclusive logical OR and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0093] In some embodiments, the controller may be part of the system and part of the examples described above. Such a system may comprise a semiconductor processing apparatus including one or more processing tools, one or more chambers, one or more processing platforms, and / or certain processing components (such as a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling system operation before, during, and after the processing of semiconductor wafers or substrates. The electronics may sometimes be referred to as a "controller" and may control various components or sub-parts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, depending on the processing requirements and / or the type of system. Such processes may include the supply of processing gases, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid supply setting, position and motion setting, loading and unloading of wafers to and from tools, and loading and unloading of wafers to and from other transfer tools and / or load locks connected or interfaced with a particular system.

[0094] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logics, memories, and / or software that receive commands, issue commands, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuits may include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). The program instructions are commands communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for executing a specific process on or for a semiconductor wafer or for a system. The operating parameters may, in some embodiments, be part of a recipe defined by a process engineer and may achieve one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0095] In some embodiments, the controller may be integrated with, coupled to, or, if not, network-connected to the system, or may be part of or coupled to a computer that is a combination thereof. For example, the controller may be within the "cloud" or may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system, monitor the current progress of manufacturing operations, investigate the history of past manufacturing operations, investigate trends or performance criteria from multiple manufacturing operations, change the parameters of the current process, set the processing steps following the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system through a network. Such a network may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, and such parameters and / or settings are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data specifies the parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more individual controllers that are network-connected to each other and cooperate towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely located (such as at the platform level or as part of a remote computer) and coupled to control the process on the chamber.

[0096] Exemplary systems may include, but are not limited to, a plasma etching chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etching chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etching (ALE) chamber or module, an ion implantation chamber or module, a tracking chamber or module, and any other semiconductor processing system that may be related to or used in the fabrication and / or manufacture of semiconductor wafers.

[0097] As described above, depending on one or more process steps performed by a tool, the controller may communicate with one or more of the other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, proximate tools, tools located throughout the factory, the main computer, another controller, or a tool used for material transfer to and from a tool location and / or load port within a semiconductor manufacturing facility to carry wafers in containers.

Claims

1. A substrate processing system, comprising: a drive circuit configured to generate an RF drive signal at a first RF frequency; an RF reference measurement circuit including an LC circuit having an input impedance and an output impedance, wherein an output of the LC circuit is configured to be connected to an RF power meter and a dummy load; a make-break connector configured to connect the drive circuit to one of the RF reference measurement circuit and a processing chamber load including components of the substrate processing system; and an output impedance of the drive circuit is matched to an input impedance of the LC circuit; the output impedance of the drive circuit is not matched to the impedance of the RF power meter and the dummy load; and the LC circuit is configured to match the impedance of the drive circuit to the RF power meter and the dummy load.

2. The substrate processing system according to claim 1, wherein the RF reference measurement circuit includes a first conductor connected to an output of the LC circuit, and the RF power meter is connected to the first conductor.

3. The substrate processing system according to claim 2, wherein the RF reference measurement circuit includes a second conductor connected to an output of the RF power meter, and the dummy load is connected to the second conductor.

4. The substrate processing system according to claim 3, wherein the output impedance of the drive circuit and the input impedance of the LC circuit are in a range of 0.1 Ω to 10 Ω.

5. The substrate processing system according to claim 4, wherein the output impedance of the drive circuit and the input impedance of the LC circuit are in a range of 0.5 Ω to 2 Ω.

6. The substrate processing system according to claim 3, wherein the output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in a range of 20 Ω to 100 Ω.

7. The substrate processing system according to claim 6, wherein the output impedance of the LC circuit and the impedance of the RF power meter, the dummy load, the first conductor, and the second conductor are in a range of 45 Ω to 55 Ω.

8. The substrate processing system according to claim 3, wherein the LC circuit comprises a first connector connected to the make-break connector, an inductor having one end connected to the first connector, a first capacitor connected in series to the opposite end of the inductor, and a second capacitor connected in parallel between the opposite end of the inductor and the first capacitor is a substrate processing system.

9. The substrate processing system according to claim 8, wherein the first capacitor includes one or more ceramic capacitors having a first terminal connected to the second capacitor and a second terminal connected to the second connector, is a substrate processing system.

10. The substrate processing system according to claim 9, wherein the second conductor includes a coaxial cable, is a substrate processing system.

11. The substrate processing system according to claim 8, wherein the second capacitor includes one or more vacuum capacitors, is a substrate processing system.

12. The substrate processing system according to claim 8, wherein the input impedance of the LC circuit is in the range of 0.5 Ω to 2 Ω, and the output impedance of the LC circuit is in the range of 45 Ω to 55 Ω, is a substrate processing system.

13. The substrate processing system according to claim 8, wherein the first RF frequency is in the range of 1.8 MHz to 2.2 MHz, is a substrate processing system.

14. The substrate processing system according to claim 3, wherein the LC circuit comprises a first connector connected to the make-break connector, an inductor having one end connected to the first connector, a first capacitor connected in series to the opposite end of the inductor, and a second capacitor connected in parallel to the opposite end of the first capacitor is a substrate processing system.

15. The substrate processing system according to claim 14, wherein the first capacitor and the second capacitor include one or more vacuum capacitors, is a substrate processing system.

16. The substrate processing system according to claim 14, wherein the first RF frequency is in the range of 12.35 MHz to 13.65 MHz, is a substrate processing system.

17. The substrate processing system according to claim 1, wherein the make-break connector comprises a bracket, a first conductor extending from one side of the bracket, It extends from the opposite side of the bracket and includes a second conductor connected to the first conductor, a connector removably attached to the second conductor, configured to connect the second conductor to the RF reference measurement circuit and not to the drive circuit and includes the connector is T-shaped and includes a main body connected to the second conductor and a cylindrical portion extending from the main body and including a cavity, the cavity of the cylindrical portion is configured to be connected to the RF reference measurement circuit, a substrate processing system. **Claim 18** The substrate processing system according to claim 1, wherein the make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, a connector removably attached to the second conductor, configured to connect the second conductor to the drive circuit and not to the RF reference measurement circuit and includes the connector includes a main body, a bore in the main body, and a fastener extending through the bore to connect the main body to the second conductor, a substrate processing system. **Claim 19** The substrate processing system according to claim 1, wherein the make-break connector includes a bracket, a first conductor extending from one side of the bracket, a second conductor extending from the opposite side of the bracket and connected to the first conductor, a connector removably attached to the second conductor, configured to connect the second conductor to one of the RF reference measurement circuit and the drive circuit and includes the connector includes a T-shaped connector, a substrate processing system. **Claim 20** The substrate processing system according to claim 19, wherein the T-shaped connector includes a first leg and a second leg each including a first and a second cavity, the first leg and the second leg are slidably received on the second conductor, the T-shaped connector includes a third leg disposed in a transverse direction with respect to the first leg and the second leg and including a cavity configured to be connected to the RF reference measurement circuit, a substrate processing system. **Claim 21** The substrate processing system according to claim 19, wherein the T-shaped connector includes a main body including a bore, a fastener extending through the bore to connect the main body to the second conductor, A cylindrical portion including a cavity extending from the main body and configured to be connected to the RF reference measurement circuit, and A substrate processing system including the same. **Claim 22** The substrate processing system according to claim 21, wherein The cylindrical portion has an axis, and The fastener is connected in a transverse direction with respect to the axis. A substrate processing system. **Claim 23** The substrate processing system according to claim 21, wherein The cylindrical portion has an axis, and The fastener is connected in a direction parallel to the axis. A substrate processing system.

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