Composition for vapor deposition

Abstract

To provide a novel composition for an EL device, or to provide a composition for an EL device, in an embodiment, capable of easily manufacturing an EL device with stable characteristics, or to provide a composition for an EL device, in another embodiment, capable of manufacturing an EL device with stable characteristics at low cost.SOLUTION: There is provided a composition for an EL device in which different substances are mixed in advance, and which does not cause a change in characteristics of the EL device even when evaporation is repeatedly performed using the composition, wherein the difference in the 5% weight loss temperature under a pressure of 0.1 Pa or less between the contained substances is less than or equal to 50°C.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a composition for an EL device. Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an article, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, the technical field of one aspect of the present invention disclosed in this specification includes semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, memory devices, imaging devices, their driving methods, or their manufacturing methods, as an example.

Background Art

[0002] The practical application of EL devices (organic EL devices) that utilize electroluminescence (EL) using organic compounds is progressing. The basic configuration of these EL devices is one in which an organic compound layer (EL layer) containing a light-emitting material is sandwiched between a pair of electrodes. By applying a voltage to this device to inject carriers and utilizing the recombination energy of the carriers, light emission from the light-emitting material can be obtained.

[0003] Since such an EL device is self-luminous, when used as a pixel of a display, it has advantages such as higher visibility and no need for a backlight compared to liquid crystals, and is suitable as a flat panel display element. In addition, a display using such an EL device can be manufactured to be thin and lightweight, which is also a great advantage. Furthermore, it is also characterized by a very fast response speed.​​​​​​​​​​​​​​

[0004] In addition, since these EL devices can form a light-emitting layer continuously in two dimensions, light emission in a planar shape can be obtained. This is a characteristic that is difficult to achieve with point light sources typified by incandescent bulbs and LEDs, or linear light sources typified by fluorescent lamps. Therefore, it has high utility value as a planar light source applicable to lighting and the like.

[0005] Such EL devices are manufactured by wet methods typified by the inkjet method and dry methods typified by the vapor deposition method. However, due to reasons such as ease of high definition and ease of long life, currently, manufacturing by the vapor deposition method is the mainstream.

[0006] When manufacturing an EL device by the vapor deposition method, the light-emitting layer is formed by co-vapor depositing at least two types of substances, a light-emitting center substance and a host material. Co-vapor deposition is a vapor deposition method in which different substances are simultaneously vapor deposited from different vapor deposition sources. However, due to improvement of carrier balance inside the light-emitting layer and other reasons, there are cases where three or more types of substances are co-vapor deposited.

[0007] When co-vapor depositing a plurality of substances, the same number of vapor deposition sources as the number of substances is required, and the cost of the vapor deposition apparatus and the labor for maintenance may increase.

Prior Art Documents

Patent Documents

[0008]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0009] In one aspect of the present invention, an object is to provide a composition for a novel EL device. Or, In one aspect of the present invention, an EL device composition capable of easily manufacturing an EL device with stable characteristics is provided. Or, an object is to provide a composition for an EL device. Or, in one aspect of the present invention, an object is to provide a composition for an EL device capable of manufacturing an EL device with stable characteristics at low cost. Or, an object is to provide a composition for an EL device capable of manufacturing an EL device with stable characteristics at low cost. is the purpose.

[0010] Note that the description of these problems does not prevent the existence of other problems. Note that one aspect of the present invention does not necessarily have to have all of these problems. Note that other problems will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract these other problems from the description of the specification, drawings, claims, etc. Note that one aspect of the present invention does not necessarily have to have all of these problems. Note that other problems will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract these other problems from the description of the specification, drawings, claims, etc. will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract these other problems from the description of the specification, drawings, claims, etc. will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract these other problems from the description of the specification, drawings, claims, etc.

[0011] The present invention only needs to solve any one of the above problems.

Means for Solving the Problems

[0012] One aspect of the present invention is a composition for an EL device containing at least two or more organic compounds, wherein the difference in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the two or more organic compounds is 50 degrees or less, which is a composition for an EL device. Or, another aspect of the present invention is a composition for an EL device containing a first organic compound and a second organic compound,

[0013] wherein the difference in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the first organic compound and the second organic compound is 50 degrees or less, which is a composition for an EL device. wherein the difference in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the first organic compound and the second organic compound is 50 degrees or less, which is a composition for an EL device. wherein the difference in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the first organic compound and the second organic compound is 50 degrees or less, which is a composition for an EL device. is a composition for an EL device.

[0014] Alternatively, in the above structure, another embodiment of the present invention is a semiconductor device in which the first organic compound has an electron-transporting property. wherein the second organic compound has hole transport properties.

[0015] Alternatively, another embodiment of the present invention is a photosensitive resin composition according to the above structure, wherein the first organic compound is benzophenone. The composition for an EL device has a rhodazine skeleton or a benzothiodiazine skeleton.

[0016] Alternatively, another embodiment of the present invention is a method for manufacturing a semiconductor device according to the above structure, wherein the first organic compound is naphthofuroate. Pyrazine skeleton, phenanthrofuropyrazine skeleton, naphthothiopyrazine skeleton, or phenanthrofuropyrazine skeleton The composition for an EL device has any one of the thiopyrazine skeletons.

[0017] Alternatively, another embodiment of the present invention is a compound having the above structure, wherein the first organic compound is represented by the following general formula: The composition for an EL device is represented by (G1).

[0018] [ka]

[0019] In the general formula (G1), Q represents oxygen or sulfur. 1 is a replacement or represents an unsubstituted fused aromatic ring. 1 and R 2 One is hydrogen transporting and the other is hole transporting. represents a group having a total of 1 to 100 carbon atoms and a skeleton of the formula:

[0020] Alternatively, another embodiment of the present invention is a compound having the above structure, wherein the first organic compound is represented by the following structural formula: The composition for an EL device is represented by (100).

[0021] [ka]

[0022] Or, another aspect of the present invention is that, in the above configuration, the first organic compound is benzofuro a composition for an EL device having a pyrimidine skeleton or a benzothiopyrimidine skeleton.

[0023] Or, another aspect of the present invention is that, in the above configuration, the first organic compound is represented by the following general formula (G2) and is a composition for an EL device.

[0024] [Chemical formula]

[0025] In the formula, Q represents oxygen or sulfur. Ar 1 , Ar 2 , Ar 3 , and Ar 4 each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is , an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, or a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or is any one of cyano groups, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less . Further, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms, and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring , a heterocyclic aromatic ring containing a triphenylene ring, a dibenzothiophene ring, a heterocyclic aromatic ring containing a dibenzofuran ring , a heterocyclic aromatic ring containing a carbazole ring, a benzimidazole ring, a triphenylamine structure . Further, R is hydrogen, an alkyl having 1 to 6 carbon atoms 1 , A kill group, a substituted or unsubstituted monocyclic saturated hydrocarbon having 5 to 7 carbon atoms, a substituted or unsubstituted polycyclic saturated hydrocarbon having 7 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms.

[0026] Alternatively, another aspect of the present invention is that the first organic compound is an EL device composition represented by the following structural formula (200) or the following structural formula (201).

[0027]

Chemical formula

[0028] Alternatively, another aspect of the present invention is that, in the above configuration, the second organic compound is an EL device composition having an aromatic amine skeleton.

[0029] Alternatively, another aspect of the present invention is that, in the above configuration, the second organic compound is an EL device composition having a carbazole skeleton.

[0030] Alternatively, another aspect of the present invention is that, in the above configuration, the second organic compound is an EL device composition having a triarylamine skeleton.

[0031] Alternatively, another aspect of the present invention is that, in the above configuration, the second organic compound is an EL device composition having a bicarbazole skeleton.

[0032] Alternatively, another aspect of the present invention is that, in the above configuration, the bicarbazole skeleton is an EL device composition in which two carbazolyl groups are bonded to each other at any one of the 2nd to 4th positions. That is.

[0033] Alternatively, another aspect of the present invention is, in the above configuration, an EL device composition in which the second organic compound has a triarylamine skeleton and a carbazole skeleton.

[0034] Alternatively, another aspect of the present invention is, in the above configuration, an EL device composition in which the nitrogen atom in the triarylamine and the carbazole skeleton are bonded via a phenylene group.

[0035] Alternatively, another aspect of the present invention is, in the above configuration, an EL device composition in which the carbazole skeleton is bonded at the 2nd to 4th or 9th position.

[0036] Alternatively, another aspect of the present invention is, in the above configuration, an EL device composition in which the second organic compound has at least one fluorene skeleton.

[0037] Alternatively, another aspect of the present invention is, in the above configuration, an EL device composition in which the first organic compound and the second organic compound form an exciplex.

[0038] Alternatively, another aspect of the present invention is, in the above configuration, an EL device composition in which the difference in the 5% weight loss temperature is 40 degrees or less.

[0039] Alternatively, another aspect of the present invention is, in the above configuration, an EL device composition in which the difference in the 5% weight loss temperature is 30 degrees or less.

[0040] Note that the light-emitting device in this specification includes an image display device using an EL device. In addition, a connector, for example, an anisotropic conductive film or TCP (Tape A module to which a carrier package is attached, a printed wiring board provided at the end of a TCP, a module provided with a wiring board, or a module in which an IC (integrated circuit) is directly mounted by a COG (Chip On Glass) method are also included in the light-emitting device in some cases. Furthermore, lighting fixtures and the like may have a light-emitting device.

Advantages of the Invention

[0041] In one aspect of the present invention, a novel composition for an EL device can be provided. Or, in one aspect of the present invention, a composition for an EL device capable of easily manufacturing an EL device with stable characteristics can be provided. Or, in one aspect of the present invention, a composition for an EL device capable of manufacturing an EL device with stable characteristics at low cost can be provided. In one aspect of the present invention, a composition for an EL device capable of easily manufacturing an EL device with stable characteristics can be provided. Or, in one aspect of the present invention, a composition for an EL device capable of manufacturing an EL device with stable characteristics at low cost can be provided.

[0042] Note that the description of these effects does not prevent the existence of other effects. Note that one aspect of the present invention does not necessarily have all of these effects. Note that other effects will be apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc.

[0043]

Brief Description of the Drawings

[0043]

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DETAILED DESCRIPTION OF THE INVENTION

[0044] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is as follows Without being limited to the description, those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. This is easily understood by those skilled in the art. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below. It is not limited to the description of the embodiments shown below.

[0045] (Embodiment 1) An organic EL device is usually formed by sandwiching an EL layer containing an organic compound between a pair of electrodes. The EL layer has a laminated structure with separated functions. The laminated structure is, for example, the EL layer 103 shown in FIG. 1A, which includes a hole injection layer 111, a hole transport layer 112, a light emitting layer 113, an electron transport layer 114, an electron injection layer 115, and other functional layers such as a carrier blocking layer and a charge generation layer. It is composed of. Each functional layer may be a layer composed of a single substance or a layer in which a plurality of substances are mixed. In particular, the light emitting layer 113 often has a host-guest type structure in order to suppress the quenching phenomenon due to the interference between excitons and to adjust the position of the light emitting region.

[0046] Usually, in the manufacture of an organic EL device by a dry process, in order to obtain a light emitting device in which two or more different substances are uniformly mixed and present in one layer, a co-evaporation method using different evaporation sources for each substance is selected. This is because substances have different sublimation temperatures and evaporation temperatures, so it is necessary to adjust the temperature of the evaporation source to a temperature suitable for each substance and the required evaporation rate. However, in this method, an evaporation source needs to be prepared for each type of material used, so there are disadvantages such as an increase in the investment amount for the apparatus and the number of substances to be mixed depending on the apparatus.

[0047] Usually, in the manufacture of an organic EL device by a dry process, in order to obtain a light emitting device in which two or more different substances are uniformly mixed and present in one layer, a co-evaporation method using different evaporation sources for each substance is selected. This is because substances have different sublimation temperatures and evaporation temperatures, so it is necessary to adjust the temperature of the evaporation source to a temperature suitable for each substance and the required evaporation rate. However, in this method, an evaporation source needs to be prepared for each type of material used, so there are disadvantages such as an increase in the investment amount for the apparatus and the number of substances to be mixed depending on the apparatus. and evaporation temperatures, so it is necessary to adjust the temperature of the evaporation source to a temperature suitable for each substance and the required evaporation rate. This is because substances have different sublimation temperatures and evaporation temperatures, so it is necessary to adjust the temperature of the evaporation source to a temperature suitable for each substance and the required evaporation rate.

[0048] However, in this method, since an evaporation source needs to be prepared for each type of material used, there are disadvantages such as an increase in the investment amount for the apparatus and the number of substances to be mixed depending on the apparatus. That is, there are disadvantages such as an increase in the investment amount for the apparatus and the number of substances to be mixed depending on the apparatus.

[0049] On the other hand, due to the demand for more efficient and longer-lived EL devices, the structure of the light-emitting layer 113 has further evolved from the above-described host-guest type, and structures composed of three or more substances such as a host, an assist, and a guest have begun to be put into practical use. As described above, the types of substances that can be mixed in one light-emitting layer depend on the number of evaporation sources of the device, and furthermore, a certain amount of investment is required to add evaporation sources. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition.

[0050] As described above, the types of substances that can be mixed in one light-emitting layer depend on the number of evaporation sources of the device, and furthermore, a certain amount of investment is required to add evaporation sources. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition.

[0051] Furthermore, considering mass production and sending many products to the market, even if a plurality of devices are manufactured using the same evaporation source continuously, it is necessary to provide an EL device with no characteristic variation. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition.

[0052] Furthermore, considering mass production and sending many products to the market, even if a plurality of devices are manufactured using the same evaporation source continuously, it is necessary to provide an EL device with no characteristic variation. Here, consider a method of depositing a film of two or more substances using one evaporation source by mixing a plurality of substances in advance. FIG. 14 is a schematic diagram when forming a layer in which three substances (Compound 1, Compound 2, dopant) are mixed by evaporation. In FIG. 14A, since it shows a diagram when evaporating three substances from different evaporation sources, three evaporation sources are required. On the other hand, FIG. 14B shows a diagram when depositing a composition in which two substances (Compound 1, Compound 2) are mixed in advance from one evaporation source, so even when depositing three substances, only two evaporation sources are needed. However, since substances have their own evaporation temperatures and sublimation temperatures, even if a film is formed using a pre-mixed material, it is difficult to form a layer with a targeted film thickness and composition. Furthermore, considering mass production and sending many products to the market, even if a plurality of devices are manufactured using the same evaporation source continuously, it is necessary to provide an EL device with no characteristic variation.

[0053] As described above, the evaporation temperature and sublimation temperature of a substance are unique values for each substance. When multiple substances are mixed and vapor deposition is performed using a single vapor deposition source, the substance with the lower temperature may evaporate more readily, and the composition of the substances inside the vapor deposition source may gradually change. When the composition of the sample inside the vapor deposition source changes, the composition of the film changes each time vapor deposition is repeated, and as a result, the characteristics of the EL device change.

[0054] Therefore, the inventors of the present invention studied a composition for an EL device in which different substances were mixed in advance, and found that even when vapor deposition was repeatedly performed using the composition, there was no change in the characteristics of the EL device. As a result, at a pressure of 0.1 Pa or less, a composition for an EL device in which the difference in the 5% weight loss temperature of the substances contained is 50°C or less was found to be less likely to change in composition during repeated vapor deposition, and also less likely to cause significant changes in the characteristics of the EL device fabricated using the composition. That is, one aspect of the present invention is a composition for an EL device containing at least two or more organic compounds, wherein the difference

[0055] in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the two or more organic compounds is 50 degrees or less in all cases. The 5% weight loss temperature can be determined from the relationship between weight and temperature (thermogravimetric measurement) by performing thermogravimetric measurement - differential thermal analysis (TG-DTA: Thermogravimetry-Differential Thermal Analysis). Note that the measurement

[0056] is preferably performed in an atmosphere of 0.1 Pa or less in view of the fact that the vapor deposition operation is performed in a pressure environment of 0.1 Pa or less. weight and temperature (thermogravimetric measurement). In addition, considering that the measurement is performed in a pressure environment where the vapor deposition operation is 0.1 Pa or less, it is preferably performed in an atmosphere of 0.1 Pa or less. is preferable. When the pressure for vapor deposition in advance is determined, it is preferable to use the value measured under that pressure.

[0057] For a sample obtained from a composition in which materials having a difference in 5% weight loss temperature measured in this way of 50 ° C or less are mixed, even in repeated vapor deposition, the composition change is small and the characteristics are good. An EL device can be stably manufactured. The difference in 5% weight loss temperature is preferably 40 ° C or less, more preferably 30 ° C or less, and even more preferably 20 ° C or less. is even more preferable.

[0058] When the composition for an EL device according to one aspect of the present invention is composed of two substances, a first organic compound and a second organic compound, the first organic compound has electron transporting properties, and the second organic compound. It is preferable that the compound has hole transporting properties. In this case, the composition for the EL device is useful as a composition for forming the light emitting layer 113 in the EL device. Further, when the first organic compound and the second organic compound form an exciplex, it is more useful as a composition for forming the light emitting layer 113. The mixing ratio is preferably the first organic compound: the second organic compound = 1: 9 to 9: 1 by weight ratio, and more preferably 2: 8 to 8: 2. is even more preferable.

[0059] Further, by using a material having hole transporting properties as the first organic compound and a substance showing electron accepting properties to the first organic compound as the second organic compound, it can be used as a composition for forming the hole injection layer 111. Useful. Further, by using a material having electron transporting properties as the first organic compound and a substance showing electron donating properties to the first organic compound as the second organic compound, the electron transport layer 114 can be formed. ​​​​​​​​​​​​​ It is useful as a composition for [purpose not clear from the context].

[0060] In addition, when the first organic compound has electron transporting properties and the second organic compound has hole transporting properties, the first organic compound having a benzofurazidine skeleton or a benzothiadiazine skeleton is effective for producing a more stable EL device. In that case, the first organic compound is more preferably any of a naphthofuropyrazine skeleton, a phenanthrofuropyrazine skeleton, a naphthothiopyrazine skeleton, or a phenanthrothiopyrazine skeleton, and even more preferably an organic compound represented by the following general formula (G1). In this case, the composition for an EL device is useful as a composition for forming the light-emitting layer 113 in the EL device. case, the composition for an EL device is useful as a composition for forming the light-emitting layer 113 in the EL device. It is useful as a composition for forming the light-emitting layer 113 in the EL device.

[0061]

Chemical formula

[0062] Alternatively, another aspect of the present invention is a composition for an EL device in the above configuration, wherein the first organic compound has the following structural formula (100).

[0063] ​​ [Chemical formula]

[0064] Further, when the first organic compound has electron transporting property and the second organic compound has hole transporting property, the first organic compound preferably has a benzofuropyrimidine skeleton or a benzothiopyrimidine skeleton, and more preferably is an organic compound represented by the following general formula (G2) in order to fabricate a more stable EL device. [Chemical formula] In the formula, Q represents oxygen or sulfur. Ar1, Ar2, Ar3, and Ar4 each independently represent a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms [Chemical formula]

[0065] [Chemical formula]

[0066] In the formula, Q represents oxygen or sulfur. Ar1, Ar2, Ar3, and Ar4 each independently represent a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms 1 Ar1 2 Ar2 3 Ar3 4 Ar4 each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R1 is hydrogen, an alkyl group having 1 to 6 carbon atoms 1 R1 an alkyl group, a substituted or unsubstituted monocyclic saturated hydrocarbon having 5 to 7 carbon atoms, a substituted or unsubstituted polycyclic saturated hydrocarbon having 7 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms. In the general formula (G2), m and n are preferably 0.

[0067] Or, another aspect of the present invention is that the first organic compound is a composition for an EL device represented by the following structural formula (200) or the following structural formula (201).

[0068] [Chemical formula]

[0069] Further, when the first organic compound has electron transporting properties and the second organic compound has hole transporting properties it is preferable that the second organic compound has an aromatic amine skeleton because it has high hole transporting properties and good stability In addition, it is preferable that the second organic compound has a triarylamine skeleton or a carbazole skeleton or both.

[0070] When the second organic compound is an organic compound having both the above triarylamine skeleton and carbazole skeleton it is preferable that the nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group because it is stable and has good reliability. Similarly, when the second organic compound is an organic compound having both the above triarylamine skeleton and carbazole skeleton, it is preferable that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position because of reliability and is preferable from the viewpoint.

[0071] When the second organic compound is an organic compound having a carbazole skeleton, it is preferable that the second organic compound is an organic compound having a bicarbazole skeleton because of good hole transportability and high stability. At this time, the bicarbazole skeleton preferably has a structure in which two carbazolyl groups are bonded to each other at any one of the 2nd to 4th positions.

[0072] The composition for an EL device according to one embodiment of the present invention having the above configuration is less likely to cause a large change in the composition itself or the composition of the formed film even when continuous evaporation is performed. Therefore, an EL device manufactured using the composition for an EL device can be an EL device exhibiting good and stable characteristics.

[0073] In addition, since a plurality of organic compounds can be vapor-deposited from a single vapor-deposition source, an EL device having good characteristics can be manufactured without additional or extra capital investment. That is, an EL device having good characteristics can be manufactured at low cost.

[0074] (Embodiment 2) In this embodiment, a detailed aspect of an EL device that can be manufactured using the composition for an EL device shown in Embodiment 1 will be described. FIG. 1 shows an EL device that can be manufactured using the composition for an EL device shown in Embodiment 1. The EL device shown in FIG. 1A has an anode 101, a cathode 102, and an EL layer 103.

[0075] In FIG. 1, the EL layer 103 has various functional layers including a light-emitting layer 113, In addition to the above light-emitting layer, a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, an electron injection layer 115, etc. may be included. The light-emitting layer 113 contains a light-emitting material, and the EL device described in this embodiment obtains light emission from the light-emitting material. The light-emitting layer 113 may contain a host material and other materials.

[0076] Subsequently, the detailed structure and material examples of the above-described EL device will be described.

[0077] The anode 101 is preferably formed using a metal, alloy, conductive compound having a large work function (specifically, 4.0 eV or more), and mixtures thereof. Specifically, for example,[[]] indium tin oxide (ITO: Indium Tin Oxide), indium tin oxide containing silicon or silicon oxide, indium zinc oxide, indium oxide containing tungsten and zinc oxide (IWZO), etc. can be mentioned. These conductive metal oxide films are usually formed by sputtering, but a sol-gel method or the like can also be applied for fabrication. As an example of the fabrication method, indium zinc oxide is formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide.[[]] There are methods such as this. Also, indium oxide containing tungsten and zinc oxide (IWZO) can be formed by a sputtering method using a target containing 0.5 to 5 wt% of tungsten oxide and 0.1 to 1 wt% of zinc oxide with respect to indium oxide.[[]] This can also be formed by the method. In addition, gold (Au), platinum (Pt), nickel (Ni), tantalum (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co)<000062{6> ​, copper (Cu), palladium (Pd), or nitrides of metal materials (e.g., titanium nitride), etc. can be mentioned. Graphene can also be used. By using it in the layer in contact with the anode 101 in the EL layer 10 3, regardless of the work function, the electrode material can be selected so that it becomes possible.

[0078] The EL layer 103 preferably has a laminated structure, but there are no particular limitations on the laminated structure, and various layer structures such as a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, a carrier blocking layer, an exciton blocking layer, and a charge generation layer can be applied. In this embodiment, as shown in Fig. 1A, in addition to the hole injection layer 111, the hole transport layer 112, and the light-emitting layer 11 3, a configuration having an electron transport layer 114 and an electron injection layer 115, and as shown in Fig. 1B likewise, in addition to the hole injection layer 111, the hole transport layer 112, and the light-emitting layer 113, an electron transport layer 114 and an electron injection layer 115, and a configuration having a charge generation layer 116 will be described for two types of configurations . The materials constituting each layer will be specifically shown below.

[0079] The hole injection layer 111 can be formed using a substance having electron accepting properties. Electron accepting substances include molybdenum oxide, vanadium oxide, ruthenium oxide , tungsten oxide, manganese oxide, etc. Among them, in particular, molybdenum oxide is stable in the air, has low hygroscopicity, and is a preferable substance because it is easy to handle .

[0080] In addition to the above-mentioned substances, organic compounds having an electron-withdrawing group (halogen group or cyano group) can be mentioned . Electron-withdrawing groups (especially halogen groups such as fluoro groups and cyano groups) having The [3]radialene derivative is an organic compound that can be suitably used as a substance having electron-accepting properties because of its very high electron-accepting ability. Such organic compounds include, for example, , 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation : F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8, 9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8 -hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), etc., and α,α’,α’’-1,2,3-cyclopropanetriylidene tris[4-cyano-2, 3,5,6-tetrafluorobenzeneacetonitrile], α,α’,α’’-1,2,3 -cyclopropanetriylidene tris[2,6-dichloro-3,5-difluoro-4-( trifluoromethyl)benzeneacetonitrile], α,α’,α’’-1,2,3-cyclopropanetriylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], etc. As organic compounds having electron-accepting properties, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms, such as HAT-CN, are thermally stable and preferable.

[0081] In addition, phthalocyanine-based complex compounds such as phthalocyanine (abbreviation: H2Pc) and copper phthalocyanine (CuPc), 4,4’-bis[N-(4-diphenylaminophenyl)-N -phenylamino]biphenyl (abbreviation: DPAB), N,N’-bis{4-[bis(3- methylphenyl)amino]phenyl}-N,N’-diphenyl-(1,1’-biphenyl ​ Aromatic amine compounds such as 4,4'-diamine (abbreviation: DNTPD) can also be used. In addition, poly(3,4-ethylenedioxythiophene) / poly(styrene sulfone) Polymers such as PEDOT / PSS (polyethylenediaminetetraacetic acid) can also be used.

[0082] These electron-accepting substances are capable of transferring electrons from the adjacent hole transport layer (or hole transport material) to the By applying an electric field, electrons can be extracted, and by extracting electrons, the adjacent hole transport layer (or hole transport material) can inject (generate) holes.

[0083] In addition, the hole-injection layer 111 may be formed by adding a substance having an electron-accepting property to a substance having a hole-transporting property. A composite material having an electron-accepting property can also be used. By using a composite material containing a substance having the above properties, an electrode can be formed regardless of the work function. In other words, the anode 101 can be made of not only a material with a large work function, but also a material with a large work function. It is possible to use materials with a small work function. As the electron acceptor, the above-mentioned substances having electron acceptability can be used.

[0084] The hole transporting substance used in the composite material includes aromatic amine compounds, carbazole, and the like. Derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.), etc. Various organic compounds having hole transport properties can be used for the composite material. As a substance, 1×10 -6 cm 2 It is preferable that the material has a hole mobility of 1 / Vs or more. The following describes a compound that can be used as a substance having hole transport properties in a composite material. Specific examples of organic compounds are listed below.

[0085] Aromatic amine compounds that can be used in composite materials include N,N'-di(p-tolyl) )-N,N'-diphenyl-p-phenylenediamine (DTDPPA), 4,4' -Bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation Name: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl }-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: D NTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenyl 1,1-bis-(4-bis(4-methyl- (phenyl)-amino-phenyl)-cyclohexane (abbreviation: TAPC), etc. Specific examples of carbazole derivatives include 3-[N-(9-phenylcarbazole] [N-3-yl]-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPC A1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenyla 3-[N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzPCA2), -N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazol (abbreviation: PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: C BP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: T CPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-cal CzPA (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2 , 3,5,6-tetraphenylbenzene, etc. can be used as aromatic hydrocarbons. is, for example, 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation : t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene , 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9, 10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene , 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9’ -bianthryl, 10,10’-diphenyl-9,9’-bianthryl, 10,10’- bis(2-phenylphenyl)-9,9’-bianthryl, 10,10’-bis[(2, 3,4,5,6-pentaphenyl)phenyl]-9,9’-bianthryl, anthracene , tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene and the like. In addition, pentacene, coronene, etc. can also be used. It may have a vinyl skeleton. Examples of aromatic hydrocarbons having a vinyl group include , 4,4’-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9, 10 - bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPV PA), etc. can be mentioned.

[0086] Also, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenyl lamine) (abbreviation: PVTPA), poly[N-(4-{N’-[4-(4-diphenyl amino)phenyl]phenyl-N’-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N’-bis(4-butylphenyl)-N,N’-bis( phenyl)benzidine] (abbreviation: Poly-TPD), etc. of polymer compounds can also be used.

[0087] The hole transport layer 112 is formed by including a material having hole transportability. The material having hole transportability is preferably one having a hole mobility of 1×10 -6 cm 2 / Vs or more. .

[0088] Examples of the material having the above hole transportability include 4,4’-bis[N-(1-naphthyl)-N-phenyl amino]biphenyl (abbreviation: NPB), N,N’-bis(3-methylphenyl)- N,N’-diphenyl-[1,1’-biphenyl]-4,4’-diamine (abbreviation: TPD ), 4,4’-bis[N-(spiro-9,9’-bifluorene-2-yl)-N-phenyl amino]biphenyl (abbreviation: BSPB), 4-phenyl-4’-(9-phenylfluoro rene-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3’-( 9-phenylfluorene-9-yl)triphenylamine (abbreviation: mBPAFLP), 4 -phenyl-4’-(9-phenyl-9H-carbazol-3-yl)triphenylamine ン(abbreviation: PCBA1BP), 4,4’-diphenyl-4’’-(9-phenyl-9H- carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1- naphthyl)-4’-(9-phenyl-9H-carbazol-3-yl)triphenylamine ン(abbreviation: PCBANB), 4,4’-di(1-naphthyl)-4’’-(9-phenyl- 9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9- dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl) phenyl]fluorene-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-( 9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9’-bifluoro rene-2-amine (abbreviation: PCBASF), etc. compounds having an aromatic amine skeleton, and 1 ,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4’-di(N-carb azolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)- 9-phenylcarbazole (abbreviation: CzTP), 3,3’-bis(9-phenyl-9H- carbazole) (abbreviation: PCCP), etc. compounds having a carbazole skeleton, and 4,4’ ,4’’-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: D BT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene -9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4 -(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzoth ophene (abbreviation: DBTFLP-IV), etc. compounds having a thiophene skeleton, and 4,4 ’,4’’-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DB F3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), etc. compounds having a furan skeleton are exemplified. Among those described above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferable because they have good reliability, high hole transportability, and contribute to reducing the driving voltage. In addition, the substances listed as hole-transporting materials used in the composite material of the hole injection layer 111 can also be suitably used as the materials constituting the hole transport layer 112. The light-emitting layer 113 is a layer containing a host material and a light-emitting material. The light-emitting material may be a fluorescent light-emitting substance, a phosphorescent light-emitting substance, a substance showing thermally activated delayed fluorescence (TADF), or other light-emitting materials. Also, the light-emitting layer 113 may be a single layer or may be composed of a plurality of layers containing different light-emitting materials. In the light-emitting layer 113, examples of the fluorescent light-emitting substances that can be used as the light-emitting material include the following. Also, other fluorescent light-emitting substances can be used. 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bi

[0089]

[0090]

[0091] ​​​​​​​​​​​​​​ S(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren- 9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn ), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-di phenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol -9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA ), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2- anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl -N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole -3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert- butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-( 9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAP A), N,N''-(2-tert-butylanthracene-9,10-diyl-di-4,1 -phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine]( abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2- anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N ',N'',N'',N''',N''' - octaphenyldibenz[g,p]chrysene -2,7,10,15-Tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,1 0-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazole-3-a mine (abbreviation: 2PCAPA), N-[9,10-bis(1,1’-biphenyl-2-yl )-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N’,N’ -triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10 -bis(1,1’-biphenyl-2-yl)-2-anthryl]-N,N’,N’-tri phenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis( 1,1’-biphenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phen yl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N, 9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545 T, N,N’-diphenylquinacridone, (abbreviation: DPQd), Rubrene, 5,12-bi s(1,1’-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BP T), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl- 4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-meth yl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoli nium-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N’,N’-tetrakis(4-methylphenyl)tetracene-5, 11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N’,N’ -Tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,1 0-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1, 1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitro rile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7- tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoline -9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: D CJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl} -4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2 ,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-te trahydro-1H,5H-benzo[ij]quinolin-9-yl)ethenyl]-4H-pi ran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N’-dif enyl-N,N’-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naph tho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03) etc. are mentioned. In particular, condensed aromatic diamine compounds represented by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6Bn fAPrn-03 are preferable because they have high hole trap properties and are excellent in luminous efficiency and reliability.

[0092] In the light-emitting layer 113, examples of the phosphorescent light-emitting substance that can be used as the light-emitting material include For example, the following can be mentioned.

[0093] Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H -1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III )(abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl -4H-1,2,4-triazolato)iridium(III)(abbreviation: [Ir(Mpt z)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H -1,2,4-triazolato]iridium(III)(abbreviation: [Ir(iPrptz-3 b)3]) and other organometallic iridium complexes having a 4H-triazole skeleton, tris [3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-tri zolato]iridium(III)(abbreviation: [Ir(Mptz1-mp)3]), tris(1 -methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium (III)(abbreviation: [Ir(Prptz1-Me)3]) and other organometallic iridium complexes having a 1H-triazole skeleton, fac-tris[1-(2,6-diisopropyl phenyl)-2-phenyl-1H-imidazole]iridium(III)(abbreviation: [Ir (iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimi (dazole[1,2-f]phenanthridinato]iridium(III)(abbreviation: [Ir(dmp impt-Me)3]) and other organometallic iridium complexes having an imidazole skeleton, bis[2-(4’,6’-difluorophenyl)pyridinato-N,C iridium( 2’ III) Tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4', ,6'-difluorophenyl)pyridinato-N,C 2’ iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)f enyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir( CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyr dinato-N,C 2’ iridium(III) acetylacetonate (abbreviation: FIr(ac ac)) and other organometallic iridium complexes having a phenylpyridine derivative with an electron-withdrawing group as a ligand are exemplified. These are compounds that exhibit blue phosphorescent emission and are compounds having a peak of emission from 440 nm to 520 nm.

[0094] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iri dium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis (6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mp pm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4- phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(ac ac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylp yrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl Pyrimidinato iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]) ), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(II I) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes having a pyrimidine skeleton such as (acetylacetonato)bis(3,5-dimethyl-2-phenyl pyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac) ), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyr dinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]) ), organometallic iridium complexes having a pyrazine skeleton such as, tris(2-phenylpyrid inato-N,C 2’ )iridium(III) (abbreviation: [Ir(ppy)3]), bis(2- phenylpyridinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(I II) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(be nzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris (2-phenylquinolinato-N,C 2’ )iridium(III) (abbreviation: [Ir(pq) 3]), bis(2-phenylquinolinato-N,C 2’ )iridium(III) acetylac etonate (abbreviation: [Ir(pq)2(acac)]), organometallic iridium complexes having a pyridine skeleton such as, tris(acetylacetonato)(monophenanthroline)te rbium(III) (abbreviation: [Tb(acac)3(Phen)]), rare earth metals such as ​Examples of complexes include compounds that mainly exhibit green phosphorescent emission, having an emission peak at 500 nm to 6 00 nm. Among them, organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because of their outstanding reliability and luminescence efficiency.

[0095] Also, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis [4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di( naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]) and other organometallic iridium complexes having a pyrimidine skeleton, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2, 3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis (4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]) and other organometallic iridium complexes having a pyrazine skeleton, tris(1-phenylisoquinolinato-N,C )iridium(III) (abbreviation: [Ir (piq)3]), bis(1-phenylisoquinolinato-N,C )iridium(II I)acetylacetonate (abbreviation: [Ir(piq)2(acac)]) and other organometallic iridium complexes having a pyridine skeleton. 2’ 2’ ​​​​​​​In addition to the organometallic iridium complex having a pyrazine skeleton, 2,3,7,8,12,13,17,18 -octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP), platinum complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophen anthroline) europium(III) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthro line) europium(III) (abbreviation: [Eu(TTA)3(Phen)]) and the like rare earth metal complexes are mentioned. These are compounds that exhibit red phosphorescent emission and have an emission peak in the range of 60 0 nm to 700 nm. In addition, the organometallic iridium complex having a pyrazine skeleton can obtain red emission with good chromaticity.

[0096] In addition to the phosphorescent compounds described above, known phosphorescent emission materials can also be selected and used.

[0097] In the light-emitting layer 113, as the TADF material that can be used, fullerenes and their derivatives, acridine and its derivatives, eosin derivatives, etc. can be used. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd), etc. are mentioned. Examples of the metal-containing porphyrin include protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (Sn F2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride as shown by the following structural formula, etc. ​ Complex (SnF2(Copro III-4Me)), octaethylporphyrin-fluoride Tin complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(E tio I)), octaethylporphyrin-platinum chloride complex (PtCl2OEP), etc. can also be cited. be cited.

[0098]

Chemical formula

[0099] Also, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine ( abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9’-phenyl-9H,9’H-3,3’-bicarbazole (abbreviation: PCCzT zn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl -4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4 -(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5- diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACR XTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl] sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10’H-spiro[a ... ... ... ... ... π-electron excess type complex aromatic rings such as a heterocyclic compound having one or both of a π-electron deficient type complex aromatic ring and a π-electron excess type complex aromatic ring can also be used. Since the heterocyclic compound has a π-electron excess type complex aromatic ring and a π-electron deficient type complex aromatic ring, it has both high electron transporting properties and hole transporting properties, which is preferable. Among them, among the skeletons having a π-electron deficient type complex aromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and a triazine skeleton are preferable because they are stable and have good reliability. In particular, a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are preferable because they have high acceptor properties and good reliability. Among the skeletons having a π-electron excess type complex aromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton are stable and have good reliability, so it is preferable to have at least one of these skeletons. Note that a dibenzofuran skeleton is preferable as the furan skeleton, and a dibenzothiophene skeleton is preferable as the thiophene skeleton. As the pyrrole skeleton, an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton are particularly preferable. Note that a substance in which a π-electron excess type complex aromatic ring and a π-electron deficient type complex aromatic ring are directly bonded has both strong electron donating properties of the π-electron excess type complex aromatic ring and strong electron accepting properties of the π-electron deficient type complex aromatic ring, and the energy difference between the S1 level and the T1 level becomes small. Therefore, it is particularly preferable because thermally activated delayed fluorescence can be efficiently obtained. Note that instead of the π-electron deficient type complex aromatic ring, an electron withdrawing group such as a cyano group is bonded. ​​​​​​​​​​​​ An aromatic ring may also be used. Further, as the π-electron-excessive type skeleton, an aromatic amine skeleton, a phenanthrene skeleton, etc. can be used. Further, as the π-electron-deficient type skeleton, a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or borantrene, an aromatic ring or a heteroaromatic ring having a nitrile group such as benzonitrile or a cyano group such as cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. Thus, a π-electron-deficient type skeleton and a π-electron-excessive type skeleton can be used instead of at least one of the π-electron-deficient type heteroaromatic ring and the π-electron-excessive type heteroaromatic ring. Further, as the π-electron-deficient type skeleton, a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or borantrene, an aromatic ring or a heteroaromatic ring having a nitrile group such as benzonitrile or a cyano group such as cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. An oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or borantrene, an aromatic ring or a heteroaromatic ring having a nitrile group such as benzonitrile or a cyano group such as cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. An anthraquinone skeleton, a boron-containing skeleton such as phenylborane or borantrene, an aromatic ring or a heteroaromatic ring having a nitrile group such as benzonitrile or a cyano group such as cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. An aromatic ring or a heteroaromatic ring having a nitrile group such as benzonitrile or a cyano group such as cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. A carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. Thus, a π-electron-deficient type skeleton and a π-electron-excessive type skeleton can be used instead of at least one of the π-electron-deficient type heteroaromatic ring and the π-electron-excessive type heteroaromatic ring. Thus, a π-electron-deficient type skeleton and a π-electron-excessive type skeleton can be used instead of at least one of the π-electron-deficient type heteroaromatic ring and the π-electron-excessive type heteroaromatic ring. can be used.

[0100]

Chemical formula

[0101] Note that a TADF material is a material having a function capable of converting energy from triplet excitation energy to singlet excitation energy due to a small difference between the S1 level and the T1 level and reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted (reverse intersystem crossing) to singlet excitation energy by a small amount of thermal energy, and a singlet excited state can be efficiently generated. Further, triplet excitation energy can be converted into light emission. Note that a TADF material is a material having a function capable of converting energy from triplet excitation energy to singlet excitation energy due to a small difference between the S1 level and the T1 level and reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted (reverse intersystem crossing) to singlet excitation energy by a small amount of thermal energy, and a singlet excited state can be efficiently generated. Therefore, triplet excitation energy can be upconverted (reverse intersystem crossing) to singlet excitation energy by a small amount of thermal energy, and a singlet excited state can be efficiently generated. Further, triplet excitation energy can be converted into light emission. .

[0102] Further, an exciplex (also referred to as an exciplex or an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 level and the T1 level. Further, an exciplex (also referred to as an exciplex or an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 level and the T1 level. As a TADF material capable of converting triplet excitation energy into singlet excitation energy It has such a function.

[0103] Note that as an index of the T1 level, a phosphorescence spectrum observed at low temperature (for example, from 77K to 10K) can be used. As the TADF material, a tangent is drawn at the trailing edge on the short-wavelength side of its fluorescence spectrum, and the energy of the wavelength at the position where the extrapolated line intersects the X-axis is defined as the S1 level. A tangent is drawn at the trailing edge on the short-wavelength side of the phosphorescence spectrum, and when the energy of the wavelength of the extrapolated line is defined as the T1 level, it is preferable that the difference between S1 and T1 is 0.3 eV or less, and more preferably 0.2 eV or less.

[0104] When the TADF material is used as the light-emitting center material, the S1 level of the host material is preferably higher than the S1 level of the TADF material. Also, the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0105] As the host material of the light-emitting layer, various carrier transport materials such as materials having electron transport properties, materials having hole transport properties, and the above-mentioned TADF materials can be used.

[0106] As the material having hole transport properties, the substances listed as the materials having hole transport properties included in the hole transport layer 112 can be preferably used. In particular, an organic compound having an aromatic amine skeleton is preferable because it has high hole transport properties and good stability. Also, among the organic compounds having an aromatic amine skeleton, it is preferable to have a triarylamine skeleton or a carbazole skeleton or both.

[0107] In addition, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable that the nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group because it is stable and has good reliability. Similarly, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable from the viewpoint of reliability that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position. When the nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group, it is preferable because it is stable and has good reliability. Similarly, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable from the viewpoint of reliability that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position. When the nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group, it is preferable because it is stable and has good reliability. Similarly, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable from the viewpoint of reliability that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position. In addition, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable that the nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group because it is stable and has good reliability. Similarly, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable from the viewpoint of reliability that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position. In addition, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable that the nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group because it is stable and has good reliability. Similarly, when the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable from the viewpoint of reliability that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position. When the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable from the viewpoint of reliability that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position. When the material having hole transporting properties is an organic compound having both the above-mentioned triarylamine skeleton and carbazole skeleton, it is preferable from the viewpoint of reliability that the carbazole skeleton is bonded to the amine at the 2nd to 4th or 9th position.

[0108] In addition, when the material having hole transporting properties is an organic compound having a carbazole skeleton, it is preferable that it is an organic compound having a bicarbaazole skeleton because it has good hole transporting properties and high stability. At this time, it is preferable that the bicarbaazole skeleton has a structure in which two carbazolyl groups are bonded to each other at any one of the 2nd to 4th positions. In addition, when the material having hole transporting properties is an organic compound having a carbazole skeleton, it is preferable that it is an organic compound having a bicarbaazole skeleton because it has good hole transporting properties and high stability. At this time, it is preferable that the bicarbaazole skeleton has a structure in which two carbazolyl groups are bonded to each other at any one of the 2nd to 4th positions. In addition, when the material having hole transporting properties is an organic compound having a carbazole skeleton, it is preferable that it is an organic compound having a bicarbaazole skeleton because it has good hole transporting properties and high stability. At this time, it is preferable that the bicarbaazole skeleton has a structure in which two carbazolyl groups are bonded to each other at any one of the 2nd to 4th positions. In addition, when the material having hole transporting properties is an organic compound having a carbazole skeleton, it is preferable that it is an organic compound having a bicarbaazole skeleton because it has good hole transporting properties and high stability. At this time, it is preferable that the bicarbaazole skeleton has a structure in which two carbazolyl groups are bonded to each other at any one of the 2nd to 4th positions.

[0109] Examples of the material having hole transporting properties having such a structure include the following. Examples of the material having hole transporting properties having such a structure include the following.

[0110]

Chemical formula

[0111] Examples of the material having electron transporting properties include, for example, bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl) Examples of the material having electron transporting properties include, for example, bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl) Examples of the material having electron transporting properties include, for example, bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl) Examples of the material having electron transporting properties include, for example, bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl) Phenolate]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl) Phenolate]zinc(II) (abbreviation: ZnBTZ) and other metal complexes, 2-(4-bipheny ryl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation : PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylph enyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-te rt-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl) phenyl]-9H-carbazole (abbreviation: CO11), 2,2’,2’’-(1,3,5 -benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TP BI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H -benzimidazole (abbreviation: mDBTBIm-II) and other heterocyclic compounds having a polyazole skeleton, 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzof ,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3’-(dibenzothio ,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3’-(9H-carbazol-9-yl)bipheny l-3-yl]dibenzof,h]quinoxaline (abbreviation: 2mCzBPDBq), 4,6 -bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPn P2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation 4,6- bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation : 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation : Heterocyclic compounds having a diazine skeleton such as 4,6mDBTP2Pm-II), and 3,5 -bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCz PPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmP yPB), and other heterocyclic compounds having a pyridine skeleton can be mentioned. Among those described above, dia heterocyclic compounds having a zine skeleton and heterocyclic compounds having a pyridine skeleton have good reliability and are preferable. In particular, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties and contribute to reducing the driving voltage.

[0112] In addition, as a material having electron transport properties, an organic compound having a benzofluorodiazine skeleton or a benzothiadia zine skeleton is particularly preferable, and among them, an organic compound represented by the following general formula (G1) is preferable.

[0113]

Chemical formula

[0114] In the above general formula (G1), Q represents oxygen or sulfur. Also, Ar 1 represents a substituted or unsubstituted condensed aromatic ring. Also, R 1 and R 2 represent a group having a total carbon number of 1 to 100, where one is hydrogen and the other is a hole transport property skeleton. As the hole transport property skeleton, a π-electron excess type heteroaromatic ring skeleton such as a pyrrole skeleton, a furan skeleton, a thiophene skeleton, a carbazole skeleton, etc., and a condensed aromatic hydrocarbon ring skeleton and an aromatic amine skeleton can be mentioned.

[0115] In particular, an organic compound represented by the following structural formula (100) is preferable.

[0116]

Chem.

[0117] In addition, as the material having electron transporting properties, an organic compound having a benzofuropyrimidine skeleton or a benzothiopyrimidine skeleton is also preferable. Among them, an organic compound represented by the following general formula (G2) is preferable. is preferable.

[0118]

Chem.

[0119] In the formula, Q represents oxygen or sulfur. Ar 1 , Ar 2 , Ar 3 , and Ar 4 each independently represents a substituted or unsubstituted aromatic hydrocarbon ring. The substituent of the aromatic hydrocarbon ring is , an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Further, A is a group having 12 to 100 carbon atoms and has one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a heterocyclic aromatic ring containing a triphenylene ring, a dibenzothiophene ring, a heterocyclic aromatic ring containing a dibenzofuran ring, a heterocyclic aromatic ring containing a carbazole ring, a benzimidazole ring, a triphenylamine structure. Also, R is hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted monocyclic saturated hydrocarbon having 5 to 7 carbon atoms, a substituted or unsubstituted 1 is hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted monocyclic saturated hydrocarbon having 5 to 7 carbon atoms, a substituted or unsubstituted monocyclic saturated hydrocarbon having 5 to 7 carbon atoms,​​​​​ a polycyclic saturated hydrocarbon having 7 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms. In the general formula (G2), m and n are preferably 0.

[0120] A benzofurodiazine skeleton or a benzothiadiazine skeleton that can be suitably used as a material having electron transporting properties as described above, or an organic compound having a benzofuropyrimidine skeleton or a benzothiopyrimidine skeleton. Examples of the organic compound include the following ones. can be mentioned.

[0121]

Chemical formula

[0122] Among the above-described organic compounds, an organic compound represented by the following structural formula (200) or (201) is particularly preferred. is preferred.

[0123]

Chemical formula

[0124] When a fluorescent substance is used as a light-emitting material, as the host material, a material having an anthracene skeleton is suitable. When a substance having an anthracene skeleton is used as the host material of a fluorescent substance, it is possible to realize a light-emitting layer having both good luminous efficiency and durability. Since many materials having an anthracene skeleton have a deep HOMO level, one aspect of the present invention can be suitably applied thereto. Examples of the substance having an anthracene skeleton used as the host material include di anthracene. Substances having a phenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, are preferred because they are chemically stable. Also, when the host material has a carbazole skeleton, it is preferred because the hole injection and transport properties are enhanced. However, when a benzocarbazole skeleton in which a benzene ring is further condensed with carbazole is included, the HOMO becomes about 0.1 eV shallower than that of carbazole, and holes can more easily enter, which is even more preferred. In particular, when the host material includes a dibenzocarbazole skeleton, the HOMO becomes about 0.1 eV shallower than that of carbazole, holes can more easily enter, the hole transport property is excellent, and the heat resistance is also high, which is suitable. Therefore, more preferably, the host material is a substance having a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton) at the same time. From the above viewpoints of hole injection and transport properties, instead of the carbazole skeleton, a benzofluorene skeleton or a dibenzofluorene skeleton may be used. Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phen yl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7- [4-(10-phenyl-9-anthryl)phenyl]-7H-dibenz[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10- diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA )、9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphe Examples include {nil-4'-yl} anthracene (abbreviation: FLPPA). In particular, CzPA , cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties, so they are preferred choices.

[0125] Note that the host material may be a material obtained by mixing a plurality of substances. When using the mixed host material , it is preferable to mix a material having electron transporting properties and a material having hole transporting properties. By mixing a material having electron transporting properties and a material having hole transporting properties , the transport properties of the light emitting layer 113 can be easily adjusted, and the control of the recombination region can also be easily performed . The ratio of the content of the material having hole transporting properties to the material having electron transporting properties may be such that the material having hole transporting properties: the material having electron transporting properties = 1:9 to 9:1.

[0126] In addition, an exciplex may be formed between these mixed materials. The exciplex is preferably formed by selecting a combination that exhibits light emission overlapping with the wavelength of the absorption band on the lowest energy side of the light emitting material so that energy transfer becomes smooth and efficient light emission can be obtained. In addition, since the driving voltage is also reduced by using this configuration, it is preferable.

[0127] Since the light emitting layer 113 often has a configuration in which a plurality of substances are present in the same layer, the composition for an EL device according to an aspect of the present invention can be preferably used in its production. The composition for an EL device according to an aspect of the present invention is obtained by selecting two or more from the materials listed above so that the difference in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the two or more organic compounds is 50 degrees or less, and mixing them in an arbitrary ratio. The EL device composition of an aspect of the present invention is obtained by selecting two or more from the materials listed above and mixing them in an arbitrary ratio such that the difference in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the two or more organic compounds is 50 degrees or less. ​ The composition for the vice is such that even when continuous vapor deposition is performed, there is little change in the composition of the composition itself or the film formed. Therefore, an EL device manufactured using the composition for the EL device can be an EL device exhibiting good and stable characteristics. The vice can be an EL device exhibiting good and stable characteristics. In addition, since it is possible to vapor-deposit a plurality of organic compounds from a single vapor deposition source, an EL device with good characteristics can be manufactured without making additional or extra capital investment. That is, an EL device with good characteristics can be manufactured at low cost.

[0128] In addition, since it is possible to vapor-deposit a plurality of organic compounds from a single vapor deposition source, an EL device with good characteristics can be manufactured without making additional or extra capital investment. That is, an EL device with good characteristics can be manufactured at low cost. In other words, an EL device with good characteristics can be manufactured at low cost. The electron transport layer 114 is a layer containing a substance having electron transport properties. As the substance having electron transport properties, those mentioned as the substances having electron transport properties that can be used for the host material can be used.

[0129] The electron transport layer 114 is a layer containing a substance having electron transport properties. As the substance having electron transport properties, those mentioned as the substances having electron transport properties that can be used for the host material can be used. Among them, those that can be used can be used. Among them, those that can be used can be used.

[0130] Between the electron transport layer 114 and the cathode 102, as the electron injection layer 115, a layer containing an alkali metal or alkaline earth metal or a compound thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. may be provided. The electron injection layer 115 may be a layer containing an alkali metal or alkaline earth metal or a compound thereof in a layer made of a substance having electron transport properties, or an electride may be used. As the electride, for example, substances obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration can be mentioned. Between the electron transport layer 114 and the cathode 102, as the electron injection layer 115, a layer containing an alkali metal or alkaline earth metal or a compound thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. may be provided. The electron injection layer 115 may be a layer containing an alkali metal or alkaline earth metal or a compound thereof in a layer made of a substance having electron transport properties, or an electride may be used. As the electride, for example, substances obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration can be mentioned. Between the electron transport layer 114 and the cathode 102, as the electron injection layer 115, a layer containing an alkali metal or alkaline earth metal or a compound thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. may be provided. The electron injection layer 115 may be a layer containing an alkali metal or alkaline earth metal or a compound thereof in a layer made of a substance having electron transport properties, or an electride may be used. As the electride, for example, substances obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration can be mentioned. Between the electron transport layer 114 and the cathode 102, as the electron injection layer 115, a layer containing an alkali metal or alkaline earth metal or a compound thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. may be provided. The electron injection layer 115 may be a layer containing an alkali metal or alkaline earth metal or a compound thereof in a layer made of a substance having electron transport properties, or an electride may be used. As the electride, for example, substances obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration can be mentioned. Between the electron transport layer 114 and the cathode 102, as the electron injection layer 115, a layer containing an alkali metal or alkaline earth metal or a compound thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. may be provided. The electron injection layer 115 may be a layer containing an alkali metal or alkaline earth metal or a compound thereof in a layer made of a substance having electron transport properties, or an electride may be used. As the electride, for example, substances obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration can be mentioned. Between the electron transport layer 114 and the cathode 102, as the electron injection layer 115, a layer containing an alkali metal or alkaline earth metal or a compound thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. may be provided. The electron injection layer 115 may be a layer containing an alkali metal or alkaline earth metal or a compound thereof in a layer made of a substance having electron transport properties, or an electride may be used. As the electride, for example, substances obtained by adding electrons to a mixed oxide of calcium and aluminum at a high concentration can be mentioned. Among them, those that can be used can be mentioned.

[0131] In addition, as the electron injection layer 115, a fluoride of the above alkali metal or alkaline earth metal in a microcrystalline state is used in a substance having electron transport properties (preferably an organic compound having a bipyridine skeleton). In addition, as the electron injection layer 115, a fluoride of the above alkali metal or alkaline earth metal in a microcrystalline state is used in a substance having electron transport properties (preferably an organic compound having a bipyridine skeleton). It is also possible to use a layer containing a concentration equal to or higher than a certain concentration (50 wt% or higher). Since this layer has a low refractive index, it becomes possible to provide an EL device with better external quantum efficiency. Since it is a layer with a low refractive index, it becomes possible to provide an EL device with better external quantum efficiency.

[0132] Also, a charge generation layer 116 may be provided instead of the electron injection layer 115 (Fig. 1B). The charge generation layer 116 is a layer that can inject holes into the cathode and electrons into the layer in contact with the anode side by applying a potential. The charge generation layer 116 contains at least a P-type layer 117. The P-type layer 117 is preferably formed using the composite material cited as the material that can constitute the above-mentioned hole injection layer 111. Also, the P-type layer 117 may be formed by laminating a film containing an acceptor material and a film containing a hole transport material as the materials constituting the composite material. By applying a potential to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode 102, and the EL device operates. The charge generation layer 116 is a layer that can inject holes into the cathode and electrons into the layer in contact with the anode side by applying a potential. The charge generation layer 116 contains at least a P-type layer 117. The P-type layer 117 is preferably formed using the composite material cited as the material that can constitute the above-mentioned hole injection layer 111. Also, the P-type layer 117 may be formed by laminating a film containing an acceptor material and a film containing a hole transport material as the materials constituting the composite material. By applying a potential to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode 102, and the EL device operates.

[0133] Note that the charge generation layer 116 preferably has either or both of an electron relay layer 118 and an electron injection buffer layer 119 in addition to the P-type layer 117.

[0134] The electron relay layer 118 contains at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is preferably between the LUMO level of the substance having electron accepting properties in the P-type layer 117 and the LUMO level of the substance contained in the layer in contact with the charge generation layer 116 in the electron transport layer 114. The electron relay layer 118 contains at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is preferably between the LUMO level of the substance having electron accepting properties in the P-type layer 117 and the LUMO level of the substance contained in the layer in contact with the charge generation layer 116 in the electron transport layer 114. layer 118 contains at least a substance having electron transport properties and has a function of preventing the interaction between the electron injection buffer layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is preferably between the LUMO level of the substance having electron accepting properties in the P-type layer 117 and the LUMO level of the substance contained in the layer in contact with the charge generation layer 116 in the electron transport layer 114. The electron relay ​​​​​The specific LUMO level of the material having electron transport properties used in the layer 118 is −5.0 eV or more, preferably -5.0 eV or more and -3.0 eV or less. The electron transporting material used in the electron transport layer 118 is a phthalocyanine material or a gold material. It is preferred to use metal complexes having metal-oxygen bonds and aromatic ligands.

[0135] The electron injection buffer layer 119 contains an alkali metal, an alkaline earth metal, a rare earth metal, and These compounds (alkali metal compounds (oxides such as lithium oxide, halides, lithium carbonate) Alkaline earth metal compounds (including carbonates such as titanium and cesium carbonate), alkaline earth metal compounds (oxides, halogens compounds of rare earth metals (including oxides, halides, carbonates) or compounds of rare earth metals (including oxides, halides, carbonates) It is possible to use a material with high electron injection properties, such as SiO 2 .

[0136] The electron injection buffer layer 119 is formed by containing a substance having an electron transporting property and a donor substance. When the donor material is an alkali metal, an alkaline earth metal, or a rare earth metal, and their compounds (alkali metal compounds (oxides such as lithium oxide, halides , including carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (oxides, compounds of rare earth metals (including oxides, halides, carbonates) In addition to tetrathianaphthacene (abbreviated as TTN), nickelocene, decamethicone, An organic compound such as nickelocene can also be used. The electron transport layer 114 may be formed using the same material as that used for forming the electron transport layer 114 described above. This can be done.

[0137] The material for forming the cathode 102 is gold, which has a small work function (specifically, 3.8 eV or less). Metals, alloys, electrically conductive compounds, and mixtures thereof can be used. Specific examples of such cathode materials include alkali metals such as lithium (Li) and cesium (Cs). , and elements such as magnesium (Mg), calcium (Ca), and strontium (Sr) Elements belonging to Group 1 or 2 of the periodic table and alloys containing these elements (MgAg, AlL i), europium (Eu), ytterbium (Yb), and other rare earth metals, and However, the electron injection between the cathode 102 and the electron transport layer 114 is not required. By providing an interlayer, the work function can be controlled by using Al, Ag, ITO, silicon, or Various conductive materials such as indium oxide-tin oxide containing silicon oxide are used as the cathode 102. These conductive materials can be used by dry deposition methods such as vacuum deposition and sputtering. The film can be formed by a method such as a printing method, an ink jet method, or a spin coating method. It may be formed by a wet method using a sol-gel method, or by a wet method using a paste of a metal material. It may be formed.

[0138] The EL layer 103 can be formed by various methods, including dry and wet methods. For example, vacuum deposition, gravure printing, offset printing, screen printing, etc. A printing method, an ink jet method, a spin coating method, or the like may also be used. When a plurality of substances are present in one layer, the composition for an EL device according to one embodiment of the present invention is By using this, it is possible to manufacture an EL device with good and stable characteristics. It also has cost advantages, as it reduces the need for increased capital investment and maintenance work.

[0139] Each of the above-described electrodes or layers may be formed using different film-forming methods.

[0140] Note that the configuration of the layer provided between the anode 101 and the cathode 102 is not limited to the above. However, in order to suppress quenching caused by the proximity of the light-emitting region to the metal used for the electrode or the carrier injection layer, a configuration in which a light-emitting region where holes and electrons recombine is provided at a site distant from the anode 101 and the cathode 102 is preferable. Moreover, the hole transport layer or the electron transport layer in contact with the light-emitting layer 113, particularly the carrier transport layer close to the recombination region in the light-emitting layer 113, suppresses energy transfer from the excitons generated in the light-emitting layer. Therefore, it is preferably composed of a light-emitting material constituting the light-emitting layer or a material having a band gap larger than the band gap of the light-emitting material contained in the light-emitting layer.

[0141]

[0142] Subsequently, an embodiment of an EL device (also referred to as a stacked device or a tandem device) having a configuration in which a plurality of light-emitting units are stacked will be described with reference to FIG. 1C. This EL device is an EL device having a plurality of light-emitting units between an anode and a cathode. One light-emitting unit has substantially the same configuration as the EL layer 103 shown in FIG. 1A. That is, it can be said that the EL device shown in FIG. 1C is an EL device having a plurality of light-emitting units, and the EL device shown in FIG. 1A or FIG. 1B is an EL device having one light-emitting unit.

[0143] In FIG. 1C, between the anode 501 and the cathode 502, there are a first light-emitting unit 511 and a second ​​​​​​​​​​​The light-emitting units 512 are stacked, and a charge generation layer 513 is provided between the first light-emitting unit 511 and the second light-emitting unit 512. The anode 501 and the cathode 502 correspond to the anode 101 and the cathode 102 in FIG. 1A, respectively, and the same ones as those described in the description of FIG. 1A can be applied. Also, the first light-emitting unit 511 and the second light-emitting unit 512 may have the same configuration or different configurations. The charge generation layer 513 has a function of injecting electrons into one light-emitting unit and holes into the other light-emitting unit when a voltage is applied between the anode 501 and the cathode 502. That is, in FIG. 1C, when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 may inject electrons into the first light-emitting unit 511 and holes into the second light-emitting unit 512. The charge generation layer 513 is preferably formed with the same configuration as the charge generation layer 116 described in FIG. 1B. Since the composite material of the organic compound and the metal oxide is excellent in carrier injection property and carrier transport property, low-voltage driving and low-current driving can be realized. When the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer of the light-emitting unit, so the light-emitting unit does not necessarily need to be provided with a hole injection layer. Also, when an electron injection buffer layer 119 is provided in the charge generation layer 513, since the electron injection buffer layer 119 serves as an electron injection layer in the light-emitting unit on the anode side, it is not always necessary to form an electron injection layer in the light-emitting unit on the anode side.

[0144] When a voltage is applied to the anode 501 and the cathode 502, the charge generation layer 513 has a function of injecting electrons into one light-emitting unit and holes into the other light-emitting unit. That is, in FIG. 1C, when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 may inject electrons into the first light-emitting unit 511 and holes into the second light-emitting unit 512. The charge generation layer 513 is preferably formed with the same configuration as the charge generation layer 116 described in FIG. 1B. Since the composite material of the organic compound and the metal oxide is excellent in carrier injection property and carrier transport property, low-voltage driving and low-current driving can be realized. When the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer of the light-emitting unit, so the light-emitting unit does not necessarily need to be provided with a hole injection layer. When a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 may inject electrons into the first light-emitting unit 511 and holes into the second light-emitting unit 512. The charge generation layer 513 is preferably formed with the same configuration as the charge generation layer 116 described in FIG. 1B. Since the composite material of the organic compound and the metal oxide is excellent in carrier injection property and carrier transport property, low-voltage driving and low-current driving can be realized. When the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer of the light-emitting unit, so the light-emitting unit does not necessarily need to be provided with a hole injection layer. The charge generation layer 513 may inject electrons into the first light-emitting unit 511 and holes into the second light-emitting unit 512 when a voltage is applied between the anode 501 and the cathode 502.

[0145] The charge generation layer 513 is preferably formed with the same configuration as the charge generation layer 116 described in FIG. 1B. Since the composite material of the organic compound and the metal oxide is excellent in carrier injection property and carrier transport property, low-voltage driving and low-current driving can be realized. When the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer of the light-emitting unit, so the light-emitting unit does not necessarily need to be provided with a hole injection layer. The composite material of the organic compound and the metal oxide is excellent in carrier injection property and carrier transport property, so low-voltage driving and low-current driving can be realized. When the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer of the light-emitting unit, so the light-emitting unit does not necessarily need to be provided with a hole injection layer. When the surface on the anode side of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer of the light-emitting unit, so the light-emitting unit does not necessarily need to be provided with a hole injection layer. The charge generation layer 513 can also serve as a hole injection layer of the light-emitting unit, so the light-emitting unit does not necessarily need to be provided with a hole injection layer.

[0146] Also, when an electron injection buffer layer 119 is provided in the charge generation layer 513, since the electron injection buffer layer 119 serves as an electron injection layer in the light-emitting unit on the anode side, it is not always necessary to form an electron injection layer in the light-emitting unit on the anode side. Since the electron injection buffer layer 119 serves as an electron injection layer in the light-emitting unit on the anode side, it is not always necessary to form an electron injection layer in the light-emitting unit on the anode side. It is not always necessary to form an electron injection layer in the light-emitting unit on the anode side. ​​

[0147] In FIG. 1C, an EL device having two light-emitting units has been described. However, the above configuration can be similarly applied to an EL device in which three or more light-emitting units are stacked. As in the EL device according to the present embodiment, by arranging a plurality of light-emitting units between a pair of electrodes with a charge generation layer 513 interposed therebetween, high-brightness light emission can be achieved while keeping the current density low, and an EL device with a longer lifespan can be realized. Further, a light-emitting device that can be driven at a low voltage and consumes low power can be realized.

[0148] Also, by making the emission colors of the respective light-emitting units different, emission of a desired color can be obtained for the entire EL device. For example, in an EL device having two light-emitting units, by obtaining red and green emission colors in the first light-emitting unit and a blue emission color in the second light-emitting unit, it is also possible to obtain an EL device that emits white light as the entire EL device.

[0149] (Embodiment 3) In the present embodiment, a light-emitting device using the EL device described in Embodiment 2 will be described.

[0150] In the present embodiment, a light-emitting device manufactured using the EL device described in Embodiment 2 will be described with reference to FIG. 2. Note that FIG. 2A is a top view showing the light-emitting device, and FIG. 2B is a cross-sectional view taken along A-B and C-D of FIG. 2A. This light-emitting device includes a drive circuit unit (source line drive circuit) 601, a pixel unit 60 2, and a drive circuit unit (gate line drive circuit) 603, which are indicated by dotted lines, for controlling the light emission of the EL device. Further, 604 is a sealing substrate, 6 ​​​​​05 is a sealing material, and the inside surrounded by the sealing material 605 forms a space 607.

[0151] The routing wiring 608 is wiring for transmitting signals input to the source line drive circuit 601 and the gate line drive circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from an FPC (Flexible Printed Circuit) 609 which serves as an external input terminal. Although only the FPC is illustrated here, a printed wiring board (PWB) may be attached to this FPC. The light-emitting device in this specification includes not only the light-emitting device main body but also a state in which an FPC or a PWB is attached thereto.

[0152] Next, the cross-sectional structure will be described with reference to FIG. 2B. A drive circuit section and a pixel section are formed on the element substrate 610. Here, a source line drive circuit 601 which is a drive circuit section and one pixel in the pixel section 602 are shown.

[0153] The element substrate 610 may be made of a substrate such as glass, quartz, organic resin, metal, alloy, semiconductor, or a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, etc.

[0154] The structure of the transistor used for the pixel and the drive circuit is not particularly limited. For example, it may be an inverted staggered type transistor or a staggered type transistor. Also, it may be a top gate type transistor or a bottom gate type transistor. The material used for the transistor ​​​​​​​​​​​​​The semiconductor material is not particularly limited. For example, silicon, germanium, silicon carbide, nitride gallium, etc. can be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn-based metal oxide, may be used.

[0155] The crystallinity of the semiconductor material used for the transistor is also not particularly limited, and any of an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region partially) may be used. Using a semiconductor having crystallinity is preferable because it can suppress deterioration of transistor characteristics.

[0156] Here, in addition to the transistors provided in the above pixels and drive circuits, for semiconductor devices such as transistors used for a touch sensor and the like described later, it is preferable to apply an oxide semiconductor . In particular, it is preferable to apply an oxide semiconductor having a wider bandgap than silicon. By using an oxide semiconductor having a wider bandgap than silicon, the current in the off state of the transistor can be reduced.

[0157] The above oxide semiconductor preferably contains at least indium (In) or zinc (Zn). Further, it is more preferable that it is an oxide semiconductor containing an oxide represented by In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or Hf).

[0158] Here, the oxide semiconductor that can be used in one aspect of the present invention will be described below. .

[0159] ​​​​​​​Oxide semiconductors can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (c-axis aligned crystalline oxide semiconductor), polycrystalline oxide semiconductors, nc-OS (nano crystalline oxide semiconductor), pseudo-amorphous oxide semiconductors (a-like OS: amorphous-like oxide semiconductor), and amorphous oxide semiconductors.

[0160] CAAC-OS has c-axis orientation and a crystal structure in which a plurality of nanocrystals are connected in the a-b plane direction and have strain. Note that the strain refers to a location where the lattice arrangement changes between a region with an aligned lattice arrangement and another region with an aligned lattice arrangement in the region where the plurality of nanocrystals are connected.

[0161] Nanocrystals are based on hexagons, but are not necessarily regular hexagons and may be non-regular hexagons. Also, in the strain, there may be lattice arrangements such as pentagons and heptagons. In CAAC-OS, it is difficult to confirm a clear grain boundary (also called a grain boundary) even near the strain. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal elements.

[0162] In addition, CAAC-OS has a layered crystal structure (also referred to as a layered structure) in which a layer containing indium and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are stacked. Note that indium and element M can replace each other. When element M in the (M,Zn) layer is replaced by indium, it can also be represented as an (In,M,Zn) layer. Also, when indium in the In layer is replaced by element M, it can be represented as an (In,M ) layer.

[0163] CAAC-OS is a highly crystalline oxide semiconductor. On the other hand, since it is difficult to confirm distinct crystal grain boundaries in CAAC-OS, it can be said that a decrease in electron mobility due to crystal grain boundaries is unlikely to occur. Also, since the crystallinity of an oxide semiconductor may decrease due to the incorporation of impurities or the generation of defects, CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies (V :oxygen vacancy)). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. For this reason, the oxide semiconductor having CAAC-OS is heat-resistant and highly reliable. O

[0164] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS does not show regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film. Thus, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor .

[0165] Note that indium, gallium, and zinc are oxide semiconductors. The IGZO nanocrystals mentioned above are stable. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. , small crystals (e.g., crystals of several mm or several cm) are more likely to be formed than large crystals (here, crystals of several mm or several cm). For example, the nanocrystals mentioned above may be structurally more stable.

[0166] The a-like OS is an oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The ke-OS has lower crystallinity than the nc-OS and CAAC-OS.

[0167] Oxide semiconductors have a variety of structures, each with different properties. Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and nc- The compound may have two or more of the above-mentioned OS and CAAC-OS.

[0168] In addition to the oxide semiconductors mentioned above, Cloud-Aligned Computing (CAC) osite)-OS may also be used.

[0169] CAC-OS has a conductive function in some parts of the material and an insulating function in other parts of the material. The entire material functions as a semiconductor. When used in a semiconductor layer, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the gate and the insulating function work in a complementary manner, the switching function (O The function of turning it on / off can be imparted to the CAC-OS. In the CAC-OS By separating each function, both functions can be enhanced to the maximum extent.

[0170] In addition, the CAC-OS has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. Also, in the material the conductive region and the insulating region may be separated at the nanoparticle level. Also, the conductive region and the insulating region may be unevenly distributed in the material respectively. Also, the conductive region may be observed with a blurred periphery and connected in a cloud shape.

[0171] Also, in the CAC-OS, the conductive region and the insulating region are each dispersed in the material with a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less. There are cases.

[0172] Also, the CAC-OS is composed of components having different band gaps. For example, the CAC-OS is composed of a component having a wide band gap caused by the insulating region and a component having a narrow band gap caused by the conductive region. In this case of the configuration, when carriers flow, mainly carriers flow in the component having the narrow band gap. Also, the component having the narrow band gap acts complementarily on the component having the wide band gap, and carriers also flow in the component having the wide band gap in conjunction with the component having the narrow band gap. Therefore when the above CAC-OS is used in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field effect mobility can be obtained in the on state of the transistor. gap acts complementarily on the component having a wide band gap, and carriers also flow in the component having a wide band gap in conjunction with the component having a narrow band gap. For this reason when the component having a narrow band gap is interlocked with the component having a narrow band gap, carriers also flow in the component having a wide band gap. Therefore when the above CAC-OS is used in the channel formation region of a transistor, a high current driving force, that is, a large on-current, and a high field effect mobility can be obtained in the on state of the transistor. In the on state, a high current driving force, that is, a large on-current, and a high field effect mobility can be obtained. It can be done.

[0173] That is, CAC-OS can also be referred to as a matrix composite or a metal matrix composite. It can also be called.

[0174] By using the above-mentioned oxide semiconductor material as the semiconductor layer, fluctuations in electrical characteristics can be suppressed, and a highly reliable transistor can be realized. A highly reliable transistor can be realized.

[0175] In addition, due to its low off-current, the transistor having the above-mentioned semiconductor layer can hold the charge accumulated in the capacitor through the transistor for a long period of time. By applying such a transistor to a pixel, it is possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. It is possible to hold the charge accumulated in the capacitor through the transistor for a long period of time. By applying such a transistor to a pixel, it is possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, an electronic device with extremely low power consumption can be realized. It can be realized.

[0176] For the purpose of stabilizing the characteristics of the transistor, etc., it is preferable to provide an underlayer film. As the underlayer film, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, and it can be formed as a single layer or by lamination. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, a MOCVD (Metal Organic CVD) method, etc.), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, etc. Note that the underlayer film may not be provided if it is not necessary. An inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, and it can be formed as a single layer or by lamination. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, a MOCVD (Metal Organic CVD) method, etc.), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, etc. CVD (Chemical Vapor Deposition) method (plasma CVD method , thermal CVD method, MOCVD (Metal Organic CVD) method, etc.), ALD ( Atomic Layer Deposition) method, coating method, printing method, etc. Note that the underlayer film may not be provided if it is not necessary.

[0177] Note that FET623 indicates one of the transistors formed in the drive circuit section 601. This is also the case. The drive circuit can be formed by various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown. However, this is not necessarily required, and the drive circuit can be formed outside the substrate instead of on the substrate. .

[0178] In addition, the pixel portion 602 is formed by a plurality of pixels including a switching FET 611, a current control FET 612, and an anode 613 electrically connected to its drain. However, the present invention is not limited to this, and a pixel portion combining three or more FETs and a capacitive element may be used. Here, an insulating material 614 is formed to cover the end portion of the anode 613. Here, it can be formed by using a positive photosensitive acrylic resin film. In addition, in order to improve the covering property of the EL layer and the like formed later, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulating material 614. For example, when a positive photosensitive acrylic resin is used as the material of the insulating material 614, it is preferable to provide a curved surface having a radius of curvature (0.2 μm to 3 μm) only at the upper end portion of the insulating material 614. In addition, either a negative photosensitive resin or a positive photosensitive resin can be used as the insulating material 614.

[0179] An EL layer 616 and a cathode 617 are respectively formed on the anode 613. Here, as the material used for the anode 613 that functions as an anode, it is desirable to use a material having a large work function. For example, an ITO film, or an indium tin oxide film containing silicon, 2 .

[0180] In addition, in order to improve the covering property of the EL layer and the like formed later, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulating material 614. For example, when a positive photosensitive acrylic resin is used as the material of the insulating material 614, it is preferable to provide a curved surface having a radius of curvature (0.2 μm to 3 μm) only at the upper end portion of the insulating material 614. In addition, either a negative photosensitive resin or a positive photosensitive resin can be used as the insulating material 614. In addition, in order to improve the covering property of the EL layer and the like formed later, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulating material 614. For example, when a positive photosensitive acrylic resin is used as the material of the insulating material 614, it is preferable to provide a curved surface having a radius of curvature (0.2 μm to 3 μm) only at the upper end portion of the insulating material 614. In addition, either a negative photosensitive resin or a positive photosensitive resin can be used as the insulating material 614. When a positive photosensitive acrylic resin is used as the material of the insulating material 614, it is preferable to provide a curved surface having a radius of curvature (0.2 μm to 3 μm) only at the upper end portion of the insulating material 614. 0.2 μm to 3 μm) is preferably provided. In addition, as the insulating material 614 either a negative photosensitive resin or a positive photosensitive resin can be used.

[0181] An EL layer 616 and a cathode 617 are respectively formed on the anode 613. Here, as the material used for the anode 613 that functions as an anode, it is desirable to use a material having a large work function. For example, an ITO film, or an indium tin oxide film containing silicon, 2 An indium oxide film containing 0 to 20 wt% zinc oxide, a titanium nitride film, a chromium film, a tungsten film, a Zn film, a Pt film, etc. In addition to single-layer films, a laminate of a titanium nitride film and a film mainly composed of aluminum, a three-layer structure of a titanium nitride film, a film mainly composed of aluminum, and a titanium nitride film, etc. can be used. When a laminated structure is used, the resistance as wiring is low, good ohmic contact can be achieved, and it can further function as an anode. In addition, the EL layer 616 is formed by various methods such as vapor deposition using a vapor deposition mask, inkjet method, spin coating method, etc. The EL layer 616 includes the structure as described in Embodiment 2. Also, as other materials constituting the EL layer 616, low molecular compounds or high molecular compounds (including oligomers and dendrimers) may be used. Furthermore, as the material used for the cathode 617 formed on the EL layer 616 and functioning as a cathode, materials with a small work function (Al, Mg, Li, Ca, or alloys and compounds thereof (MgAg, MgIn, AlLi, etc.)) are preferably used. When the light generated in the EL layer 616 passes through the cathode 617, it is preferable to use a laminate of a thin metal film with a reduced film thickness and a transparent conductive film (ITO, indium tin oxide containing 2 to 20 wt% zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) as the cathode 617.

[0182] Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment Note that the EL layer 616 is formed by various methods such as vapor deposition using a vapor deposition mask, inkjet method, spin coating method, etc. The EL layer 616 includes the structure as described in Embodiment 2. Also, as other materials constituting the EL layer 616, low molecular compounds or high molecular compounds (including oligomers and dendrimers) may be used. Furthermore, as the material used for the cathode 617 formed on the EL layer 616 and functioning as a cathode, materials with a small work function (Al, Mg, Li, Ca, or alloys and compounds thereof (MgAg, MgIn, AlLi, etc.)) are preferably used. When the light generated in the EL layer 616 passes through the cathode 617, it is preferable to use a laminate of a thin metal film with a reduced film thickness and a transparent conductive film (ITO, indium tin oxide containing 2 to 20 wt% zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) as the cathode 617.

[0183] Furthermore, as the material used for the cathode 617 formed on the EL layer 616 and functioning as a cathode, materials with a small work function (Al, Mg, Li, Ca, or alloys and compounds thereof (MgAg, MgIn, AlLi, etc.)) are preferably used. When the light generated in the EL layer 616 passes through the cathode 617, it is preferable to use a laminate of a thin metal film with a reduced film thickness and a transparent conductive film (ITO, indium tin oxide containing 2 to 20 wt% zinc oxide, indium tin oxide containing silicon, zinc oxide (ZnO), etc.) as the cathode 617. Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment

[0184] Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment Note that the EL device 618 is formed by the anode 613, the EL layer 616, and the cathode 617. The EL device 618 is the EL device described in Embodiment 2. The pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment Note that the pixel portion is formed of a plurality of EL devices, but in the light-emitting device of the present embodiment may contain both the EL device described in Embodiment 2 and EL devices having other configurations. They may be mixed.

[0185] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, an EL device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filling material, and in addition to the case where an inert gas (such as nitrogen or argon) is filled, there is also a case where it is filled with a sealing material. Forming a recess in the sealing substrate and providing a drying material therein can suppress deterioration due to the influence of moisture, which is a preferable configuration. The EL device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filling material, and in addition to the case where an inert gas (such as nitrogen or argon) is filled, there is also a case where it is filled with a sealing material. Forming a recess in the sealing substrate and providing a drying material therein can suppress deterioration due to the influence of moisture, which is a preferable configuration. Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, an EL device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filling material, and in addition to the case where an inert gas (such as nitrogen or argon) is filled, there is also a case where it is filled with a sealing material. Forming a recess in the sealing substrate and providing a drying material therein can suppress deterioration due to the influence of moisture, which is a preferable configuration. Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, an EL device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filling material, and in addition to the case where an inert gas (such as nitrogen or argon) is filled, there is also a case where it is filled with a sealing material. Forming a recess in the sealing substrate and providing a drying material therein can suppress deterioration due to the influence of moisture, which is a preferable configuration. Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, an EL device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filling material, and in addition to the case where an inert gas (such as nitrogen or argon) is filled, there is also a case where it is filled with a sealing material. Forming a recess in the sealing substrate and providing a drying material therein can suppress deterioration due to the influence of moisture, which is a preferable configuration. Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with the sealing material 605, an EL device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605. Note that the space 607 is filled with a filling material, and in addition to the case where an inert gas (such as nitrogen or argon) is filled, there is also a case where it is filled with a sealing material. Forming a recess in the sealing substrate and providing a drying material therein can suppress deterioration due to the influence of moisture, which is a preferable configuration.

[0186] Note that it is preferable to use an epoxy resin or glass frit for the sealing material 605. Also, these materials are desirably materials that hardly permeate moisture and oxygen. Also, as materials used for the sealing substrate 604, in addition to glass substrates and quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, or acrylic resin can be used. Note that it is preferable to use an epoxy resin or glass frit for the sealing material 605. Also, these materials are desirably materials that hardly permeate moisture and oxygen. Also, as materials used for the sealing substrate 604, in addition to glass substrates and quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, or acrylic resin can be used. Note that it is preferable to use an epoxy resin or glass frit for the sealing material 605. Also, these materials are desirably materials that hardly permeate moisture and oxygen. Also, as materials used for the sealing substrate 604, in addition to glass substrates and quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, or acrylic resin can be used. Note that it is preferable to use an epoxy resin or glass frit for the sealing material 605. Also, these materials are desirably materials that hardly permeate moisture and oxygen. Also, as materials used for the sealing substrate 604, in addition to glass substrates and quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, or acrylic resin can be used. Note that it is preferable to use an epoxy resin or glass frit for the sealing material 605. Also, these materials are desirably materials that hardly permeate moisture and oxygen. Also, as materials used for the sealing substrate 604, in addition to glass substrates and quartz substrates, plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (polyvinyl fluoride), polyester, or acrylic resin can be used.

[0187] Although not shown in FIG. 2, a protective film may be provided on the cathode. The protective film may be formed of an organic resin film or an inorganic insulating film. Also, the protective film may be formed so as to cover the exposed portion of the sealing material 605. Also, the protective film can be provided to cover the exposed side surfaces of the surfaces and sides of the pair of substrates, the sealing layer, the insulating layer, etc. Although not shown in FIG. 2, a protective film may be provided on the cathode. The protective film may be formed of an organic resin film or an inorganic insulating film. Also, the protective film may be formed so as to cover the exposed portion of the sealing material 605. Also, the protective film can be provided to cover the exposed side surfaces of the surfaces and sides of the pair of substrates, the sealing layer, the insulating layer, etc. Although not shown in FIG. 2, a protective film may be provided on the cathode. The protective film may be formed of an organic resin film or an inorganic insulating film. Also, the protective film may be formed so as to cover the exposed portion of the sealing material 605. Also, the protective film can be provided to cover the exposed side surfaces of the surfaces and sides of the pair of substrates, the sealing layer, the insulating layer, etc. Although not shown in FIG. 2, a protective film may be provided on the cathode. The protective film may be formed of an organic resin film or an inorganic insulating film. Also, the protective film may be formed so as to cover the exposed portion of the sealing material 605. Also, the protective film can be provided to cover the exposed side surfaces of the surfaces and sides of the pair of substrates, the sealing layer, the insulating layer, etc.

[0188] A material that hardly permeates impurities such as water can be used for the protective film. Therefore, water It is possible to effectively suppress the diffusion of impurities such as from the outside to the inside.

[0189] As the material constituting the protective film, oxides, nitrides, fluorides, sulfides, ternary compounds, metals or polymers can be used. For example, aluminum oxide, hafnium oxide, ha hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide , titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide , cerium oxide, scandium oxide, erbium oxide, vanadium oxide or indium ium oxide and other materials containing such substances, or materials containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, nit titanium, niobium nitride, molybdenum nitride, zirconium nitride or gallium nitride and other materials, nitrides containing titanium and aluminum, oxides containing titanium and aluminum , oxides containing aluminum and zinc, sulfides containing manganese and zinc, sulfides containing cerium and strontium, oxides containing erbium and aluminum, oxides containing yttrium and zirconium and other materials can be used.

[0190] The protective film is preferably formed using a film formation method with good step coverage. One such technique is the atomic layer deposition (ALD) method. It is preferable to use a material that can be formed using the ALD method for the protective film. By using the ALD method, a dense protective film with reduced defects such as cracks and pinholes or a uniform thickness can be formed. Also, the damage caused to the processing member when forming the protective film can be reduced.

[0191] For example, by forming a protective film using the ALD method, it is possible to form a protective film that is uniform and has few defects on a surface having a complex uneven shape, or on the upper surface, side surface, and back surface of a touch panel. .

[0192] As described above, a light-emitting device manufactured using the EL device described in Embodiment 2 can be obtained.

[0193] Since the light-emitting device in the present embodiment uses the EL device described in Embodiment 2, a light-emitting device having good characteristics can be obtained. Specifically, since the EL device described in Embodiment 2 has good luminous efficiency, it is possible to obtain a light-emitting device with low power consumption.

[0194] FIG. 3 shows an example of a full-color light-emitting device formed by forming an EL device that exhibits white light emission and providing a coloring layer (color filter) or the like. FIG. 3A shows a substrate 1001, an underlying insulating film 1002, a gate insulating film 1003, gate electrodes 1006, 1007, 1008, a first interlayer insulating film 1020, a second interlayer insulating film 1021, a peripheral portion 1042, a pixel portion 1040, a driving circuit portion 1041, anodes 1024W, 1024R, 1024G, 1024B of the EL device, a partition wall 1025, an EL layer 1028, a cathode 1029 of the EL device, a sealing substrate 1031, a sealing material 1032, etc.

[0195] Also, in FIG. 3A, the coloring layers (red coloring layer 1034R, green coloring layer 1034G, blue coloring layer 1034B) are provided on a transparent base material 1033. Also, a black matrix 1035 may be further provided. The transparent base material 1033 provided with the coloring layer and the black matrix 3 is aligned and fixed to the substrate 1001. Note that the coloring layer and the black matrix 1035 is covered with an overcoat layer 1036. Also, in FIG. 3A, light There are a light-emitting layer that does not transmit light through the coloring layer to the outside and a light-emitting layer that transmits light through each coloring layer to the outside. Light that does not transmit through the coloring layer is white, and light that transmits through the coloring layer is red, green, or blue. Thus, an image can be expressed with four-color pixels.

[0196] In FIG. 3B, an example of forming the coloring layer (red coloring layer 1034R, green coloring layer 1034G, blue coloring layer 1 034B) between the gate insulating film 1003 and the first interlayer insulating film 1020 is shown. In this way, the coloring layer may be provided between the substrate 1001 and the sealing substrate 1031.

[0197] Also, in the light-emitting device described above, a light-emitting device having a structure (bottom emission type) that emits light from the side of the substrate 1001 on which the FET is formed is used. However, a light-emitting device having a structure (top emission type) that emits light from the side of the sealing substrate 1031 may also be used. A cross-sectional view of the top emission type light-emitting device is shown in FIG. 4. In this case, a substrate that does not transmit light can be used for the substrate 1001. Until a connection electrode connecting the FET and the anode of the EL device is fabricated, it is formed in the same manner as the bottom emission type light-emitting device. Then, a third interlayer insulating film 1037 is formed to cover the anode 1022. This insulating film may also serve as a planarization layer. The third interlayer insulating film 1037 can be formed using the same material as the second interlayer insulating film, as well as other known materials. The anodes 1024W, 1024R, 1024G, 1024B of the EL device are the anodes here and

[0198] ​​​​​​However, it may be a cathode. Also, a top-emission type light-emitting device as shown in Figure 4 In this case, it is preferable that the anode is a reflective electrode. The EL layer 103 has the same structure as that described in the second embodiment, and white light is emitted. The device structure is as follows.

[0199] In the top emission structure shown in Figure 4, the colored layers (red colored layer 1034R, green colored layer The sealing is performed by a sealing substrate 1031 provided with a blue color layer 1034G and a blue color layer 1034B. The sealing substrate 1031 has a black matrix disposed between the pixels. A coloring layer (red coloring layer 1034R, green coloring layer 1034G, The blue colored layer 1034B) and the black matrix are covered by the overcoat layer 1036. The sealing substrate 1031 may be covered. Note that a light-transmitting substrate is used. Although an example of full-color display using four colors, red, green, blue, and white, is shown here, there is no particular limitation. Alternatively, full color display may be performed using four colors of red, yellow, green, and blue, or three colors of red, green, and blue.

[0200] In a top-emission type light-emitting device, the microcavity structure can be suitably applied. EL devices with a microcavity structure have an anode as a reflective electrode and a cathode as a semi-transparent / semi-reflective electrode. The reflective electrode and the semi-transmissive / semi-reflective electrode are separated by at least It has an EL layer, and at least has a light-emitting layer that becomes a light-emitting region.

[0201] The reflectance of the reflective electrode for visible light is 40% to 100%, preferably 70% to 100%. %, and its resistivity is 1×10 -2 The film is assumed to be less than Ωcm. The semi-reflective electrode has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and is a film with a resistivity of 1×10 -2 Ωcm or less.

[0202] The light emitted from the light-emitting layer contained in the EL layer is reflected by the reflective electrode and the semi-transmissive / semi-reflective electrode and resonates.

[0203] The EL device can change the optical distance between the reflective electrode and the semi-transmissive / semi-reflective electrode by changing the thicknesses of the transparent conductive film, the above-mentioned composite material, the carrier transport material, etc. By doing so, it is possible to enhance the light of the resonant wavelength and attenuate the light of the non-resonant wavelength between the reflective electrode and the semi-transmissive / semi-reflective electrode. Furthermore, since the light (the first reflected light) reflected back by the reflective electrode causes significant interference with the light (the first incident light) directly incident on the semi-transmissive / semi-reflective electrode from the light-emitting layer, it is preferable to adjust the optical distance between the reflective electrode and the light-emitting layer to (2n - 1)λ / 4 (where n is a natural number of 1 or more and λ is the wavelength of the amplified emitted light). By adjusting the optical distance, it is possible to align the phases of the first reflected light and the first incident light and further amplify the light emitted from the light-emitting layer.

[0204] In addition, in the above configuration, the EL layer may have a structure having a plurality of light-emitting layers or a structure having a single light-emitting layer. For example, in combination with the configuration of the tandem-type EL device described above, a plurality of EL layers may be provided with a charge generation layer sandwiched between them in one EL device, and one or more light-emitting layers may be formed in each EL layer. This configuration may also be applied.

[0205]

[0206] ​​​​​​​​By having a microcavity structure, it is possible to enhance the forward emission intensity of a specific wavelength, so that power consumption can be reduced. In the case of a light-emitting device that displays an image with four sub-pixels of red, yellow, green, and blue, in addition to the luminance improvement effect due to yellow light emission, a microcavity structure adapted to the wavelength of each color can be applied to all sub-pixels, resulting in a light-emitting device with good characteristics.

[0207] Since the light-emitting device in this embodiment uses the EL device described in Embodiment 2, a light-emitting device with good characteristics can be obtained. Specifically, since the EL device described in Embodiment 2 has good luminous efficiency, it is possible to obtain a light-emitting device with low power consumption.

[0208] So far, the active matrix type light-emitting device has been described. From the following, the passive matrix type light-emitting device will be described. Fig. 5 shows a passive matrix type light-emitting device fabricated by applying the present invention. Note that Fig. 5A is a perspective view showing the light-emitting device, and Fig. 5B is a cross-sectional view obtained by cutting Fig. 5A along X-Y. In Fig. 5, an EL layer 955 is provided between an electrode 952 and an electrode 956 on a substrate 951. The end of the electrode 952 is covered with an insulating layer 953. And a partition layer 954 is provided on the insulating layer 953. The side walls of the partition layer 954 have an inclination such that the distance between one side wall and the other side wall becomes narrower as it approaches the substrate surface. That is, the cross-section of the partition layer 954 in the short side direction is trapezoidal, and the bottom side (the side facing the same direction as the surface direction of the insulating layer 953 and in contact with the insulating layer 953) is shorter than the upper side (the side facing the same direction as the surface direction of the insulating layer 953 and not in contact with the insulating layer 953). In Fig. 5, an EL layer 955 is provided between an electrode 952 and an electrode 956 on a substrate 951. The end of the electrode 952 is covered with an insulating layer 953. And a partition layer 954 is provided on the insulating layer 953. The side walls of the partition layer 954 have an inclination such that the distance between one side wall and the other side wall becomes narrower as it approaches the substrate surface. That is, the cross-section of the partition layer 954 in the short side direction is trapezoidal, and the bottom side (the side facing the same direction as the surface direction of the insulating layer 953 and in contact with the insulating layer 953) is shorter than the upper side (the side facing the same direction as the surface direction of the insulating layer 953 and not in contact with the insulating layer 953). The side walls of the partition layer 954 have an inclination such that the distance between one side wall and the other side wall becomes narrower as it approaches the substrate surface. That is, the cross-section of the partition layer 954 in the short side direction is trapezoidal, and the bottom side (the side facing the same direction as the surface direction of the insulating layer 953 and in contact with the insulating layer 953) is shorter than the upper side (the side facing the same direction as the surface direction of the insulating layer 953 and not in contact with the insulating layer 953). (the side facing the same direction as the surface direction of the insulating layer 953 and not in contact with the insulating layer 953). ​​By providing the partition layer 954 in this way, defects in the EL device caused by static electricity or the like can be prevented. Also, in a passive matrix type light emitting device, the EL device described in Embodiment 2 is used, and a light emitting device with good reliability or a light emitting device with low power consumption can be obtained.

[0209] As described above, the light emitting device can be suitably used as a display device for displaying an image because it is possible to control each of a large number of minute EL devices arranged in a matrix.

[0210] In addition, this embodiment can be freely combined with other embodiments.

[0211] (Embodiment 4) In this embodiment, an example in which the EL device described in Embodiment 2 is used as an illumination device will be described with reference to FIG. 6. FIG. 6B is a top view of the illumination device, and FIG. 6A is a cross-sectional view taken along the line e-f in FIG. 6B.

[0212] In the illumination device according to this embodiment, an anode 401 is formed on a light-transmissive substrate 400 that is a support. The anode 401 corresponds to the anode 101 in Embodiment 2. When extracting light from the anode 401 side, the anode 401 is formed of a light-transmissive material.

[0213] A pad 412 for supplying a voltage to the cathode 404 is formed on the substrate 400.

[0214] An EL layer 403 is formed on the anode 401. The EL layer 403 has the same configuration as the EL layer 103 in Embodiment 2, or is a combination of the light emitting units 511, 512 and the charge generation layer 513. ​​​​​​​​​It corresponds to a configuration or the like. For these configurations, please refer to the description.

[0215] The cathode 404 is formed covering the EL layer 403. The cathode 404 corresponds to the cathode 1 in Embodiment 2. 02. When extracting light from the anode 401 side, the cathode 404 is formed of a material with high reflectivity. The cathode 404 is connected to the pad 412 so that voltage is supplied. Thereby.

[0216] As described above, the lighting device shown in this embodiment has the EL device having the anode 401, the EL layer 403, and the cathode 404. Since the EL device is an EL device with high luminous efficiency, the lighting device in this embodiment can be a lighting device with low power consumption. Therefore, the lighting device in this embodiment can be a lighting device with low power consumption. Since the EL device is an EL device with high luminous efficiency, the lighting device in this embodiment can be a lighting device with low power consumption.

[0217] The substrate 400 on which the EL device having the above configuration is formed and the sealing substrate 407 are fixed and sealed using the sealing materials 405 and 406, thereby completing the lighting device. Either of the sealing materials 405 and 406 may be used. Also, a desiccant can be mixed into the inner sealing material 406 (not shown in FIG. 6B), whereby moisture can be adsorbed, leading to an improvement in reliability. The substrate 400 on which the EL device having the above configuration is formed and the sealing substrate 407 are fixed and sealed using the sealing materials 405 and 406, thereby completing the lighting device. Either of the sealing materials 405 and 406 may be used. Also, a desiccant can be mixed into the inner sealing material 406 (not shown in FIG. 6B), whereby moisture can be adsorbed, leading to an improvement in reliability. 405, 406. Also, a desiccant can be mixed into the inner sealing material 406 (not shown in FIG. 6B), whereby moisture can be adsorbed, leading to an improvement in reliability. 405, 406. Also, a desiccant can be mixed into the inner sealing material 406 (not shown in FIG. 6B), whereby moisture can be adsorbed, leading to an improvement in reliability. This leads to an improvement in reliability.

[0218] Also, by extending a part of the pad 412 and the anode 401 outside the sealing materials 405 and 406, it can be used as an external input terminal. Also, an IC chip 420 or the like on which a converter or the like is mounted may be provided thereon. Also, by extending a part of the pad 412 and the anode 401 outside the sealing materials 405 and 406, it can be used as an external input terminal. Also, an IC chip 420 or the like on which a converter or the like is mounted may be provided thereon. Also, an IC chip 420 or the like on which a converter or the like is mounted may be provided thereon.

[0219] As described above, the lighting device described in this embodiment uses the EL device described in Embodiment 2 for the EL device, and can be a light-emitting device with low power consumption. As described above, the lighting device described in this embodiment uses the EL device described in Embodiment 2 for the EL device, and can be a light-emitting device with low power consumption.

[0220] (Embodiment 5) In this embodiment, an example of an electronic device including the EL device described in Embodiment 2 as a part thereof will be described. The EL device described in Embodiment 2 is an EL device with good luminous efficiency and low power consumption. As a result, the electronic device described in this embodiment can be an electronic device having a light emitting portion with low power consumption. As an electronic device to which the above EL device is applied, for example, a television device (also referred to as a TV or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device), a portable game machine, a portable information terminal, an audio playback device, a large game machine such as a pachinko machine, etc. can be mentioned. Specific examples of these electronic devices are shown below. As a result, the electronic device described in this embodiment can be an electronic device having a light emitting portion with low power consumption.

[0221] As an electronic device to which the above EL device is applied, for example, a television device (also referred to as a TV or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device), a portable game machine, a portable information terminal, an audio playback device, a large game machine such as a pachinko machine, etc. can be mentioned. Specific examples of these electronic devices are shown below. FIG. 7A shows an example of a television device. The television device has a display portion 7103 incorporated in a housing 7101. Here, a configuration in which the housing 7101 is supported by a stand 7105 is shown. The display portion 7103 can display an image, and the display portion 7103 is configured by arranging the EL devices described in Embodiment 2 in a matrix. The operation of the television device can be performed by an operation switch provided in the housing 7101 or a separate remote control operation device 7110. The operation keys 7109 provided in the remote control operation device 7110 can be used to operate the channel and volume, and the image displayed on the display portion 7103 can be operated. Also, the remote control operation device 7110 is provided with the remote control operation device 7110.

[0222] FIG. 7A shows an example of a television device. The television device has a display portion 7103 incorporated in a housing 7101. Here, a configuration in which the housing 7101 is supported by a stand 7105 is shown. The display portion 7103 can display an image, and the display portion 7103 is configured by arranging the EL devices described in Embodiment 2 in a matrix. The display portion 7103 can display an image, and the display portion 7103 is configured by arranging the EL devices described in Embodiment 2 in a matrix.

[0223] The operation of the television device can be performed by an operation switch provided in the housing 7101 or a separate remote control operation device 7110. The operation keys 7109 provided in the remote control operation device 7110 can be used to operate the channel and volume, and the image displayed on the display portion 7103 can be operated. Also, the remote control operation device 7110 is provided with the remote control operation device 7110.​​​​​​ It may be configured to include a display unit 7107 that displays information output from

[0224] Note that the television device is configured to include a receiver, a modem, etc. The receiver can receive general television broadcasts, and can further communicate with a wired or wireless communication network via a modem to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.)

[0225] FIG. 7B1 shows a computer, which includes a main body 7201, a housing 7202, a display unit 7203, a keyboard 7204, an external connection port 7205, a pointing device 7206, etc. Note that this computer is manufactured by arranging the EL devices described in Embodiment 2 in a matrix form and using them for the display unit 7203. The computer in FIG. 7B1 may be in a form such as that in FIG. 7B2. The computer in FIG. 7B2 is provided with a second display unit 7210 instead of the keyboard 7204 and the pointing device 7206. The second display unit 7210 is of a touch panel type, and input can be performed by operating the input display displayed on the second display unit 7210 with a finger or a dedicated pen. In addition, the second display unit 7210 can display not only input displays but also other images. Also, the display unit 7203 may be a touch panel. By connecting the two screens with a hinge, it is possible to prevent problems

[0226] such as damage or breakage of the screens when storing or transporting. In addition to the display unit 7402, there are an operation button 7403, an external connection port 7404, a speaker 7405, a microphone 7406, etc. The mobile phone has a display unit 7402 made by arranging EL devices described in Embodiment 2 in a matrix form.

[0227] The mobile terminal shown in FIG. 7C can also be configured such that information can be input by touching the display unit 7402 with a finger or the like. In this case, any operation such as making a call or creating an email can be performed by touching the display unit 7402 with a finger or the like.

[0228] The screen of the display unit 7402 mainly has three modes. The first is a display mode mainly for displaying images, the second is an input mode mainly for inputting information such as characters, and the third is a display + input mode in which the two modes of the display mode and the input mode are mixed.

[0229] For example, when making a call or creating an email, the display unit 7402 may be set to the character input mode mainly for character input, and an input operation on the characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display unit 7402.

[0230] Also, by providing a detection device having sensors such as a gyro and an acceleration sensor inside the mobile terminal to detect the inclination, the orientation (portrait or landscape) of the mobile terminal can be determined, and the display on the screen of the display unit 7402 can be automatically switched.

[0231] Also, the switching of the screen mode is performed by touching the display unit 7402 or operating the operation button 7403 of the housing 7401. Also, according to the type of image displayed on the display unit 7402, ​ For example, if the image signal to be displayed on the display unit is a video signal, If it is data, the display mode is switched to, and if it is text data, the input mode is switched to.

[0232] In the input mode, the optical sensor of the display unit 7402 detects a signal and displays it. If there is no input by touch operation on the part 7402 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0233] The display portion 7402 can also function as an image sensor. By touching the device with your palm or fingers and capturing an image of your palm print or fingerprint, you can authenticate your identity. In addition, a backlight that emits near-infrared light to the display unit or a sensing light that emits near-infrared light By using a source, it is also possible to image finger veins, palm veins, etc.

[0234] Note that the structure described in this embodiment mode may be obtained by appropriately combining the structures described in Embodiment Modes 2 to 4. They can be used in combination.

[0235] As described above, the light-emitting device including the EL device according to the second embodiment has a very wide range of applications. This light emitting device can be applied to electronic devices in a wide range of fields. By using the described EL device, electronic devices with low power consumption can be obtained.

[0236] FIG. 8A is a schematic diagram showing an example of a cleaning robot.

[0237] The cleaning robot 5100 has a display 5101 on the top surface and multiple The camera 5102, the brush 5103, and the operation button 5104 are also shown. However, the bottom surface of the cleaning robot 5100 is equipped with tires, suction ports, etc. When cleaning In addition to the above, the cleaning robot 5100 is equipped with various sensors such as infrared sensors, ultrasonic sensors, acceleration sensors, piezo sensors, optical sensors, and gyro sensors. The cleaning robot 5100 is also equipped with wireless communication means.

[0238] The cleaning robot 5100 can move autonomously, detect dust 5120, and suck up the dust through the suction port provided on its bottom surface.

[0239] In addition, the cleaning robot 5100 can analyze the images captured by the camera 5102 and determine the presence or absence of obstacles such as walls, furniture, or steps. Also, when an object that may get entangled in the wiring 5103, etc. is detected through image analysis, the rotation of the brush 5103 can be stopped.

[0240] The display 5101 can display the remaining battery level, the amount of dust sucked up, etc. It is also possible to display the path traveled by the cleaning robot 5100 on the display 5101. Also, the display 5101 can be a touch panel, and the operation buttons 5104 can be provided on the display 5101.

[0241] The cleaning robot 5100 can communicate with a mobile electronic device 5140 such as a smartphone. The images captured by the camera 5102 can be displayed on the mobile electronic device 5140. Therefore, the owner of the cleaning robot 5100 can know the condition of the room even when away from home. Also, the display on the display 5101 can be confirmed on a mobile electronic device such as a smartphone.

[0242] The light-emitting device described in Embodiment 3 can be used for the display 5101 .

[0243] The robot 2100 shown in FIG. 8B includes a computing device 2110, an illuminance sensor 2101, a microphone 2102, upper camera 2103, speaker 2104, display 2105, lower camera It is equipped with a camera 2106, an obstacle sensor 2107 and a movement mechanism 2108.

[0244] The microphone 2102 has a function of detecting the user's voice and environmental sounds. The speaker 2104 has a function of emitting sound. The device 2102 and the speaker 2104 can be used to communicate with the user. It is possible.

[0245] The display 2105 has the function of displaying various information. Any information desired by the user can be displayed on the display 2105. The display 2105 may be equipped with a touch panel. It may be an information terminal that can be charged by placing it in a fixed position on the robot 2100. and enables data transfer.

[0246] The upper camera 2103 and the lower camera 2106 are used to capture images of the surroundings of the robot 2100. The obstacle sensor 2107 detects the obstacles in the robot 210 by using the moving mechanism 2108. When moving forward, the robot can sense whether there are any obstacles in its path. 00 uses an upper camera 2103, a lower camera 2106, and an obstacle sensor 2107. The light emitting device described in the third embodiment can recognize the surrounding environment and move safely. The device can be used for the display 2105.

[0247] FIG. 8C is a diagram showing an example of a goggle-type display. The goggle-type display is, for example, a housing 5000, a display unit 5001, a speaker 5003, an LED lamp 5004, an operation key 5005 (including a power switch or an operation switch), a connection terminal 5006, a sensor 5 007 (having a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays), a microphone 5008, a display unit 5002, a support unit 5012, earphones 5013, etc.

[0248] The light-emitting device described in Embodiment 3 can be used for the display unit 5001 and the second display unit 5002. It can be used.

[0249] FIG. 9 shows an example in which the EL device described in Embodiment 2 is used for an electric stand which is a lighting device. The electric stand shown in FIG. 9 has a housing 2001 and a light source 200 2. As the light source 2002, the lighting device described in Embodiment 3 may be used.

[0250] FIG. 10 shows an example in which the EL device described in Embodiment 2 is used as an indoor lighting device 3001. Since the EL device described in Embodiment 2 is an EL device with high luminous efficiency, it can be made into a lighting device with low power consumption. In addition, since the EL device described in Embodiment 2 can be made into a large area, it can be used as a large-area lighting device. Also, since the EL device described in Embodiment 2 is thin, it can be used as a thin lighting device. It becomes possible. It can be used.

[0251] The EL device described in Embodiment 2 can also be mounted on the windshield or dashboard of an automobile. Fig. 11 shows an aspect of using the EL device described in Embodiment 2 for the windshield or dashboard of an automobile. Display areas 5200 to 5203 are display areas provided using the EL device described in Embodiment 2. The display areas 5200 and 5201 are display devices equipped with the EL device described in Embodiment 2 provided on the windshield of the automobile.

[0252] The display area 5200 and the display area 5201 are display devices equipped with the EL device described in Embodiment 2 provided on the windshield of the automobile. The EL device described in Embodiment 2 can be made into a so-called see-through display device in which the anode and cathode are made of light-transmissive electrodes so that the opposite side can be seen through. In the case of a see-through display, even if it is installed on the windshield of an automobile, it can be installed without obstructing the view. When providing a transistor or the like for driving, it is preferable to use a light-transmissive transistor such as an organic transistor made of an organic semiconductor material or a transistor using an oxide semiconductor. The display area 5202 is a display device equipped with the EL device described in Embodiment 2 provided in the pillar portion. By projecting the video from the imaging means provided on the vehicle body onto the display area 5202, the view blocked by the pillar can be complemented. Similarly, the display area 5203 provided in the dashboard portion complements the view blocked by the vehicle body by projecting the video from the imaging means provided outside the automobile, thereby compensating for the blind spot and improving safety.

[0253] The display area 5203 provided in the dashboard portion complements the view blocked by the vehicle body by projecting the video from the imaging means provided outside the automobile, thereby compensating for the blind spot and improving safety. By projecting the video so as to complement the invisible part, it becomes more natural. By projecting the video so as to complement the invisible part, it becomes more natural. By projecting the video so as to complement the invisible part, it becomes more natural. By projecting the video so as to complement the invisible part, it becomes more natural. Safety confirmation can be performed without discomfort.

[0254] The display area 5203 can also provide various information by displaying navigation information, speedometers, tachometers, driving distances, fuel gauges, gear states, air conditioner settings, etc. The display can be appropriately changed in terms of its display items and layout according to the user's preferences. Note that these pieces of information can also be displayed in the display areas 5200 to 5202. Also the display areas 5200 to 5203 can also be used as lighting devices.

[0255] Also, FIGS. 12A and 12B show a foldable portable information terminal 5150. The foldable portable information terminal 5150 has a housing 5151, a display area 5152, and a bending part 5153 FIG. 12A shows the portable information terminal 5150 in an unfolded state. FIG. 12B shows the folded state of the portable information terminal 5150. Despite having a large display area 5152, the portable information terminal 5150 can be folded up to be compact and highly portable.

[0256] The display area 5152 can be folded in half by the bending part 5153. The bending part 515 3 is composed of a stretchable member and a plurality of support members. When folding, the stretchable member extends. The bending part 5153 has a radius of curvature of 2 mm or more, preferably 3 mm or more, and is folded.

[0257] Note that the display area 5152 may be a touch panel (input / output device) equipped with a touch sensor (input device). The light-emitting device described in Embodiment 3 can be used for the display area 5152 as well.

[0258] In addition, FIGS. 13A to 13C show a foldable mobile information terminal 9310. FIG. 13A shows the mobile information terminal 9310 in a deployed state. FIG. 13B shows the mobile information terminal 9310 in a state where it is changing from one of the deployed state or the folded state to the other. FIG. 13C shows the mobile information terminal 9310 in a folded state. The mobile information terminal 9310 has excellent portability in the folded state, and in the deployed state, it has excellent visibility due to a seamless and wide display area. The display panel 9311 is supported by three housings 9315 connected by a hinge 9313. Note that the display panel 9311 may be a touch panel (input / output device) equipped with a touch sensor (input device). Also, the display panel 9311 can be reversibly deformed from the deployed state of the mobile information terminal 9310 to the folded state by bending between the two housings 9315 via the hinge 9313. The light-emitting device described in Embodiment 3 can be used for the display panel 9311.

[0259]

Example

[0260] In this example, EL device 1 and EL device 2 manufactured using the composition for an EL device of one aspect of the present invention described in the embodiment, and EL device 3 manufactured using a comparative composition for an EL device will be described. The structural formulas of the organic compounds used in this example are shown below.

[0261]

Chemical formula

[0262]

Chemical formula

[0263] (Method for manufacturing EL device 1) First, indium tin oxide (ITSO) containing silicon oxide was formed into a film on a glass substrate by sputtering method to form anode 101. The film thickness was set to 70 nm, and the electrode area was 2 mm × 2 mm.

[0264] Next, as a pretreatment for forming an EL device on the substrate, the substrate surface was washed with water, and after baking at 2 00 °C for 1 hour, UV ozone treatment was performed for 370 seconds.

[0265] Thereafter, the substrate was introduced into a vacuum evaporation apparatus whose interior was evacuated to about 10 -4 Pa, and after performing vacuum baking at 170 °C for 30 minutes in the heating chamber of the vacuum evaporation apparatus, the substrate was allowed to cool for about 30 minutes and cooled.

[0266] Next, with the surface on which anode 101 was formed facing downward, the substrate on which anode 101 was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus, and on anode 101, 4,4’,4’’-(benzene-1,3,5-tri yl)tri(dibenzothiophene) (abbreviation: DBT3P-II) represented by the above structural formula (i) and molybdenum(VI ) oxide were co-evaporated at a weight ratio of 2:1 (= DBT3P-II: molybdenum(VI) oxide) to a thickness of 75 nm by evaporation method using resistance heating to form hole injection layer 111. ) and molybdenum(VI ) oxide were co-evaporated at a weight ratio of 2:1 (= DBT3P-II: molybdenum(VI) oxide) to a thickness of 75 nm

[0267] Next, on hole injection layer 111, N-(1,1’-bipheny yl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl -9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) was formed to a film thickness of 2 The hole transport layer 112 was formed by vapor deposition so as to have a thickness of 0 nm.

[0268] Next, 9-[(3'-dibenzothiophen-4-yl)-2-methyl-2-methyl-1 ... )biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine( abbreviation: 9mDBtBPNfpr) and 9,9-dimethyl- N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl] Fluorene-2-amine (abbreviation: PCBAF) was previously mixed at a weight ratio of 0.8:0.2 ( =9mDBtBPNfpr:PCBAF), and v) bis{4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl )-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2 ,2,6,6-tetramethyl-3,5-heptanedionato-κ2O,O')iridium( III) (abbreviation: [Ir(dmdppr-mCP)(dpm)]) in a weight ratio of 1 :0.1(=[9mDBtBPNfpr and PCBAF mixed composition]:[Ir(dm 40 nm of the light-emitting layer 113 was formed by co-evaporation so that When the light-emitting layer 113 was formed, the above 9mDBtBPNfpr and the above PCB AF was deposited from the same deposition source as the premixed composition sample.

[0269] Thereafter, 9mDBtBPNfpr was evaporated onto the light-emitting layer 113 to a thickness of 30 nm. Then, 2,9-bis(naphthalene-2-yl)-4,7- Diphenyl-1,10-phenanthroline (abbreviation: NBPhen) was applied to a film thickness of 15 nm. The electron transport layer 114 was formed by vapor deposition in the following manner.

[0270] After forming the electron transport layer 114, lithium fluoride (LiF) was evaporated to a thickness of 1 nm. Then, aluminum is evaporated to a thickness of 200 nm. Thus, the cathode 102 was formed, and the EL device 1 was fabricated.

[0271] For EL device 1, deposition of the light-emitting layer was performed continuously without replacing the sample in the deposition source. Eight devices with the same stack structure, n=1 to n=8, were fabricated.

[0272] (Method for fabricating EL device 2) EL device 2 is the same as EL device 1 except that PCBAF in the light-emitting layer is replaced with PCBAF represented by the above structural formula (vii). N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-bis (9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: PCBFF) Other than that, the EL device was fabricated in the same manner as in the EL device 1. When the light-emitting layer 113 was formed, 9mDB The weight ratio of tBPNfpr and PCBFF was 0.8:0.2 (=9mDBtBPN The samples were mixed to form a mixture of PCBFF and PCB-free fluorine-containing ... I arrived.

[0273] For EL device 2, the deposition of the light-emitting layer was carried out continuously without replacing the sample in the deposition source. Eight devices with the same stack structure, n=1 to n=8, were fabricated.

[0274] (Method for fabricating EL device 3) EL device 3 is the same as EL device 1 except that PCBBiF in hole transport layer 112 is replaced with the above structure. 4,4'-diphenyl-4''-(9-phenyl-9H-carbamoyl)- ... is changed to (3-(dibenzothiophen-4-yl)phenyl)[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), and the light-emitting layer 1 13 is represented by the above structural formula (ix) as 8-(2,2'-binaphthyl-6-yl)-4- 3-(dibenzothiophen-4-yl)phenyl)[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), and 9,9-dimethyl-N-[4-(1-naphthyl)phenyl]-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine (abbreviation: PCBNBF) represented by the above structural formula (x) are mixed in advance so that the weight ratio is 0.7:0.3 (= 8(βN2)-4mDBtPBfpm:PCBNBF), and [Ir(dmdppr-m5CP)2(dpm)]) is co-evaporated at a weight ratio of 1:0.1 (= [composition of 8(βN2)-4mDBtPBfpm and PCBNBF mixed]:[Ir(dmdppr-m5CP)2(dpm)]) to form 40 nm, and 9mDBtBPNfpr in the electron transport layer 114 is changed to 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), and the EL device 1 is fabricated in the same manner. When forming the light-emitting layer 113, 8(βN2)-4mDBtPBfpm and PCBNBF are evaporated from the same evaporation source as a sample of the pre-mixed composition. is changed to (3-(dibenzothiophen-4-yl)phenyl)[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), and 9,9-dimethyl-N-[4-(1-naphthyl)phenyl]-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine (abbreviation: PCBNBF) represented by the above structural formula (x) are mixed in advance so that the weight ratio is 0.7:0.3 (= 8(βN2)-4mDBtPBfpm:PCBNBF), and [Ir(dmdppr-m5CP)2(dpm)]) is co-evaporated at a weight ratio of 1:0.1 (= [composition of 8(βN2)-4mDBtPBfpm and PCBNBF mixed]:[Ir(dmdppr-m5CP)2(dpm)]) to form 40 nm, and 9mDBtBPNfpr in the electron transport layer 114 is changed to 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), and the EL device 1 is fabricated in the same manner. When forming the light-emitting layer 113, 8(βN2)-4mDBtPBfpm and PCBNBF are evaporated from the same evaporation source as a sample of the pre-mixed composition. 9,9-dimethyl-N-[4-(1-naphthyl)phenyl]-N-[4-(9-phenyl -9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine (abbreviation: PCBNBF) are mixed in advance so that the weight ratio is 0.7:0.3 (= 8(βN2)-4mDBtP Bfpm):PCBNBF), and [Ir(dmdppr-m 5CP)2(dpm)]) are co-evaporated at a weight ratio of 1:0.1 (= [8(βN2)-4mDBtP Bfpm and the composition of PCBNBF mixed]:[Ir(dmdppr-m5CP)2(d pm)]) to form 40 nm, and 9mDB tBPNfpr in the electron transport layer 114 is changed to 9-[3-(4,6-diphenyl-1 ,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H- carbazole (abbreviation: mPCCzPTzn-02), and the EL device 1 is fabricated in the same manner. When forming the light-emitting layer 113, 8(βN2)-4mDBtPBfpm and P CBNBF are evaporated from the same evaporation source as a sample of the pre-mixed composition. CBNBF are evaporated from the same evaporation source as a sample of the pre-mixed composition.

[0275] Note that for the EL device 3, the evaporation of the light-emitting layer was continuously performed without changing the sample in the evaporation source. Five devices with the same stacked structure from n = 1 to n = 5 were fabricated.

[0276] The device structures of EL devices 1 to 3 are summarized in the following table.

[0277]

Table 1

[0278] Here, Table 2 shows the results of measuring the 5% weight loss temperatures of two types of organic compounds for each device used as the composition premixed when forming the light-emitting layer 113 of EL devices 1 to 3 by vapor deposition under a vacuum (about 1 × 10 -2 Pa). The 5% weight loss temperature was determined from the relationship between weight and temperature (thermogravimetry) by performing thermogravimetry-differential thermal analysis (TG-DTA). A high-vacuum differential type differential thermal balance (TG-DTA2410SA, manufactured by Bruker AXS K.K.) was used for the measurement. When forming the light-emitting layer 113 of EL devices 1 to 3 by vapor deposition, the 5% weight loss temperatures of two types of organic compounds for each device used as the composition premixed were measured under a vacuum (about 1 × 10 -2 Pa). ×10 -2 Pa). The results are shown. The 5% weight loss temperature was determined from the relationship between weight and temperature (thermogravimetry) by performing thermogravimetry-differential thermal analysis (TG-DTA). A high-vacuum differential type differential thermal balance (TG-DTA2410SA, manufactured by Bruker AXS K.K.) was used for the measurement. temperature was determined from the relationship between weight and temperature (thermogravimetry) by performing thermogravimetry-differential thermal analysis (TG-DTA: Thermogravimetry-D ifferential Thermal Analysis). A high-vacuum differential type differential thermal balance (TG-DTA2410SA, manufactured by Bruker AXS K.K.) was used for the measurement. When forming the light-emitting layer 113 of EL devices 1 to 3 by vapor deposition, the 5% weight loss temperatures of two types of organic compounds for each device used as the composition premixed were measured under a vacuum (about 1 × 10 -2 Pa). The 5% weight loss temperature was determined from the relationship between weight and temperature (thermogravimetry) by performing thermogravimetry-differential thermal analysis (TG-DTA). A high-vacuum differential type differential thermal balance (TG-DTA2410SA, manufactured by Bruker AXS K.K.) was used for the measurement.

[0279]

Table 2

[0280] As shown in Table 2, the differences in the 5% weight loss temperatures of the organic compounds contained in the samples of the premixed composition were 43 °C for EL device 1, 21 °C for EL device 2, and 66 °C for EL device 3. After these EL devices were sealed with a glass substrate in a glove box under a nitrogen atmosphere so that the EL devices were not exposed to the atmosphere (applying a sealing material around the device and performing UV treatment and heat treatment at 80 °C for 1 hour during sealing), the initial characteristics were measured. °C.

[0281] After these EL devices were sealed with a glass substrate in a glove box under a nitrogen atmosphere so that the EL devices were not exposed to the atmosphere (applying a sealing material around the device and performing UV treatment and heat treatment at 80 °C for 1 hour during sealing), the initial characteristics were measured. After these EL devices were sealed with a glass substrate in a glove box under a nitrogen atmosphere so that the EL devices were not exposed to the atmosphere (applying a sealing material around the device and performing UV treatment and heat treatment at 80 °C for 1 hour during sealing), the initial characteristics were measured. After these EL devices were sealed with a glass substrate in a glove box under a nitrogen atmosphere so that the EL devices were not exposed to the atmosphere (applying a sealing material around the device and performing UV treatment and heat treatment at 80 °C for 1 hour during sealing), the initial characteristics were measured. This was measured using a color luminance meter (Topcon Corporation, BM-5A) for luminance and CIE chromaticity and a multi-channel spectroscope (Hamamatsu Photonics, PMA-11) for measuring the electroluminescence spectrum.

[0282] The luminance-current density characteristics of EL device 1 are shown in Fig. 15, the luminance-voltage characteristics are shown in Fig. 16, the current-voltage characteristics are shown in Fig. 17, the external quantum efficiency-luminance characteristics are shown in Fig. 18, the emission spectrum is shown in Fig. 19, and the luminance-current density characteristics of EL device 2 are shown in Fig. 20, the luminance-voltage characteristics are shown in Fig. 21, the current-voltage characteristics are shown in Fig. 22, the external quantum efficiency-luminance characteristics are shown in Fig. 23, the emission spectrum is shown in Fig. 24, and the luminance-current density characteristics of EL device 3 are shown in Fig. 25, the luminance-voltage characteristics are shown in Fig. 26, the current-voltage characteristics are shown in Fig. 27, the external quantum efficiency-luminance characteristics are shown in Fig. 28, and the emission spectrum is shown in Fig. 29.

[0283] Also, the main characteristics of each EL device near a luminance of 1000 cd / cm 2 are shown in the following table. In addition to the characteristics of the above-described devices, the characteristics of devices deposited using separate evaporation sources are also shown as references.

[0284]

Table 3

[0285] From Figs. 15 to 29 and Table 3, it was found that both EL device 1 and EL device 2 exhibit equally good initial characteristics. On the other hand, it was found that EL device 3 is an EL device with large variations in characteristics.

[0286] Also, a graph showing the change in luminance with respect to the driving time at a current density of 75 mA / cm 2 is shown in Fig. shown in FIGS. 30 to 32 and FIG. 39. FIG. 30 shows the results of EL device 1, FIGS. 31 and 39 show the results of EL device 2, and FIG. 32 shows the results of EL device 3. Note that FIG. 39 is a graph showing the change in luminance with respect to the driving time at a high temperature of 85°C. From these results, it was found that both EL device 1 and EL device 2 showed similarly good lifetimes. On the other hand, EL device 3 had a large variation in lifetime and unstable device characteristics.

[0287] From FIGS. 30 to 32, the materials constituting the composition obtained by mixing two types of materials used as vapor deposition samples, the difference in the 5% weight loss temperature under high vacuum is 50°C or less. EL devices 1 and 2 fabricated using the composition of one embodiment of the present invention were found to be EL devices with little deterioration in characteristics due to continuous vapor deposition. On the other hand, EL device 3 using a sample having a 66°C difference in the 5% weight loss temperature of the materials constituting the composition used as the vapor deposition sample was found to be an EL device with large deterioration and variation in characteristics.

[0288] Here, among the device groups of EL device 2 showing good characteristics, the results of investigating the composition of 9mDBtBPNfpr and PCBFF in the light-emitting layer in EL devices with n = 1 to n = 4 are shown. The measurement samples were prepared by dissolving the devices with n = 1 to n = 4 of the above-mentioned device 2 cut into 2 mm and each reference device in 40 μl of a mixed solvent (acetonitrile: chloroform = 7:3). Also, 0.5 of a sample mixed so that the weight ratio The mg was dissolved in 2 ml of chloroform and diluted 5-fold with acetonitrile, and used as a reference measurement. Also, the sample remaining in the evaporation source after fabricating the EL device was also measured in the same manner as the sample before evaporation.

[0289] The measurement was performed using Waters Acquity UPLC (registered trademark). The column used was Acquity UPLC BEH C8 (2.1×100 mm 1.7 μm) and the column temperature was set at 40°C. The mobile phase was mobile phase A as acetonitrile and mobile phase B as 0.1% formic acid aqueous solution. Also, the injection volume of the sample was set at 5.0 μL. The results are shown in the following table.

[0290]

Table 4

[0291] Thus, the ratio of 9mDBtBPNfpr and PCBFF in the EL device vapor-deposited using the composition for an EL device of one aspect of the present invention was almost the same as the composition of the composition for an EL device mixed in advance, and the composition of the sample remaining in the evaporation source also had a similar composition. That is, it was found that the composition for an EL device of one aspect of the present invention is a composition for an EL device in which the composition of the vapor-deposited film is less likely to change even when repeated vapor deposition is performed. Also, as a result, it was found that the characteristics of the EL device fabricated using the composition are less likely to vary significantly.

Example

[0292] In this example, an EL device was fabricated using the composition for an EL device of one aspect of the present invention described in the embodiment. The fabricated EL device 4 will be described. The structural formula of the organic compound used in this example is as follows shown below.

[0293] [Chemical formula]

[0294] (Method for fabricating EL device 4) First, indium tin oxide (ITSO) containing silicon oxide was deposited on a glass substrate by sputtering to form the anode 101. The film thickness was 70 nm, and the electrode area was 2 mm × 2 mm.

[0295] Next, as a pretreatment for forming the EL device on the substrate, the substrate surface was washed with water and baked at 2 00 °C for 1 hour, and then UV ozone treatment was performed for 370 seconds.

[0296] After that, the substrate was introduced into a vacuum evaporation apparatus whose internal pressure was reduced to about 10 -4 Pa, and vacuum baking was performed at 170 °C for 30 minutes in the heating chamber of the vacuum evaporation apparatus. Then, the substrate was allowed to cool for about 30 minutes and cooled.

[0297] Next, with the surface on which the anode 101 was formed facing downward, the substrate on which the anode 101 was formed was fixed to the substrate holder provided in the vacuum evaporation apparatus, and on the anode 101, 4,4’,4’’-(benzene-1,3,5-tri yl)tri(dibenzothiophene) (abbreviation: DBT3P-II) represented by the above structural formula (i) and molybdenum(VI) oxide were co-evaporated at a weight ratio of 2:1 (= DBT3P-II: molybdenum(VI) oxide) to form a hole injection layer 111 with a thickness of 45 nm by resistive heating evaporation method. ) and and

[0298] Next, on the hole injection layer 111, 4,4'-diphenyl -4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation : PCBBi1BP) was deposited to a thickness of 20 nm to form a hole transport layer 112 .

[0299] Subsequently, 8-(1,1'-biphenyl-4-yl)-4 -[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d pyrimidine (abbreviation: 8BP-4mDBtPBfpm), and 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4 -yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP) were mixed in advance so that the weight ratio was 0.5:0.5 (= 8BP-4mDBtPBfpm: mBPCCBP). A composition, [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN) phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(mdppy)]) represented by the above structural formula (xiv) and were co-evaporated at a weight ratio of 1:0.1 (= [composition of 8BP-4mDBtPBfpm and mBPCCBP mixed in advance]: [Ir(ppy)2(mdppy)]) to a thickness of 40 nm to form a light-emitting layer 113. When forming the light-emitting layer 113, 8BP-4mDBtPBf pm and mBPCCBP were deposited from the same evaporation source as a pre-mixed sample . Thereafter, on the light-emitting layer 113, 8BP-4mDBtPBfpm was deposited to a thickness of 20 nm so that the thickness became 20 nm . When forming the light-emitting layer 113, 8BP-4mDBtPBf pm and mBPCCBP were deposited from the same evaporation source as a pre-mixed sample .

[0300] Then, on the light-emitting layer 113, 8BP-4mDBtPBfpm was deposited to a thickness of 20 nm After deposition, 2,9-bis(naphthalene-2-yl)-4 represented by the above structural formula (vi) ,7-Diphenyl-1,10-phenanthroline (abbreviation: NBPhen) The electron transport layer 114 was formed by vapor deposition so as to form the electron transport layer 114.

[0301] After forming the electron transport layer 114, lithium fluoride (LiF) was evaporated to a thickness of 1 nm. Then, aluminum is evaporated to a thickness of 200 nm. In this way, a cathode 102 was formed, and an EL device 4 was fabricated.

[0302] For EL device 4, deposition of the light-emitting layer was performed continuously without replacing the sample in the deposition source. Four devices with the same stack structure, n=1 to n=4, were fabricated.

[0303] The device structure of EL Device 4 is summarized in the table below.

[0304] [Table 5]

[0305] Here, Table 5 shows the compounds that were mixed in advance when the light-emitting layer 113 of the EL device 4 was formed by vapor deposition. Each device was used as a mixed composition of two organic compounds in vacuum (1 × 10 -2 About Pa The 5% weight loss temperature was measured by thermogravimetry. Differential thermal analysis (TG-DTA:Thermogravimetry-Differenti Thermal Analysis was performed to determine the relationship between weight and temperature (thermogravimetry). The measurements were carried out using a high vacuum differential thermobalance (manufactured by Bruker AXS Co., Ltd.). TG-DTA2410SA) was used.

[0306] [Table 6]

[0307] The samples of the premixed compositions used to fabricate EL Device 4 were as shown in Table 6. The difference in the 5% weight loss temperature of the organic compounds contained in the sample was 14°C.

[0308] The EL device 4 was placed in a glove box with a nitrogen atmosphere so that the EL device was not exposed to the atmosphere. The process of sealing the device with a glass substrate to prevent the device from being damaged (sealing material is applied around the device and sealed After UV treatment and heat treatment at 80°C for 1 hour at the time of shutdown, the initial characteristics were measured. The measurement method was the same as in Example 1.

[0309] The luminance-current density characteristics are shown in Figure 33, the luminance-voltage characteristics in Figure 34, and the current-voltage characteristics in Figure 35. The external quantum efficiency-luminance characteristics are shown in FIG. 36, and the emission spectrum is shown in FIG.

[0310] In addition, the luminance of EL device 4 was 1000 cd / cm 2 The main characteristics of the area are as follows: In addition to the characteristics of the devices mentioned above, the The characteristics of the device deposited using the evaporation source are also shown as a reference.

[0311] [Table 7]

[0312] 33 to 37 and Table 7, all EL devices 4 exhibited equally good initial characteristics. I found that.

[0313] In addition, the current density is 50mA / cm 2A graph showing the change in luminance with respect to the driving time in is shown in FIG. 38. From FIG. 38, it was found that each EL device is a device having an equally good lifespan.

[0314] From FIG. 38, using a composition of the present invention in which the difference in the 5% weight loss temperature under high vacuum of the materials constituting the composition in which two types of materials that are samples for vapor deposition are mixed is 50° C. or less, the EL device 4 produced was found to be an EL device with little deterioration in characteristics and lifespan due to continuous vapor deposition.

[0315] (Reference Example) Since 9mDBtBPNfpr, 8(βN2)-4mDBtPBfpm, and 8BP-4mDBtPBfpm used in the examples are unpublished substances, the synthesis methods for each will be described.

[0316] ≪Synthesis Method of 9mDBtBPNfpr≫ In Example 1, the synthesis method of 9-[(3'-dibenzothiophen- 4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyridine (abbreviation: 9mDBtBPNfpr), shown as structural formula (iii), will be described. Note that the structure of 9mDB tBPNfpr is shown below.

[0317] [Chemical Formula]

[0318] [Step 1: Synthesis of 6-chloro-3-(2-methoxynaphthalen-1-yl)pyrazine-2- amine> First, 4.37 g of 3-bromo-6-chloropyrazine-2-amine and 2-methoxynaphthalene ​​​​​4.23 g of 1-boronic acid, 4.14 g of potassium fluoride, and 75 mL of dehydrated tetrahydrofuran were placed in a three-necked flask equipped with a reflux condenser, and the inside was purged with nitrogen. The inside of the flask was degassed by stirring under reduced pressure, and then 0.57 g of tris(dibenzylideneacetone)dipalladium(0) ( abbreviation: Pd2(dba)3) and 4.5 mL of tri-tert-butylphosphine (abbreviation: t -Bu3P) were added, and the mixture was stirred at 80 °C for 54 hours to cause a reaction.

[0319] After a predetermined time had elapsed, the resulting mixture was suction filtered, and the filtrate was concentrated. Then, purification was performed by silica gel column chromatography using toluene:ethyl acetate = 9:1 as the developing solvent, and the target pyrazine derivative was obtained (yellowish-white powder, yield 2.19 g, yield 36%). The synthesis scheme of Step 1 is shown below. is shown below.

[0320]

Chemical formula

[0321] <Step 2: Synthesis of 9-chloronaphtho[1’,2’:4,5]furo[2,3-b]pyrazine > Next, 2.18 g of 6-chloro-3-(2-methoxynaphthalen-1-yl)pyrazine-2-amine obtained in Step 1 above, 63 mL of dehydrated tetrahydrofuran, and 84 mL of glacial acetic acid were placed in a three-necked flask, and the inside was purged with nitrogen. After cooling the flask to -10 °C, 2.8 mL of tert-butyl nitrite was added dropwise, and the mixture was stirred at -10 °C for 30 minutes and at 0 °C for 3 hours. After a predetermined time had elapsed, 250 mL of water was added to the resulting suspension, and the target pyrazine derivative was obtained by suction filtration (yellowish-white powder, yield 1.48 g, yield 77%). The synthesis scheme of Step 2 is shown below. is shown below. is shown below. is shown below.

[0322]

Chem.

[0323] <Step 3: Synthesis of 9-[(3’-Dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1’,2’:4,5]fluoro[2,3-b]pyrazine (abbreviation: 9mDBtBPNf pr)> Furthermore, 1.48 g of 9-chloronaphtho[1’,2’:4,5]fluoro[2,3- b]pyrazine obtained in Step 2 above, 3.41 g of 3’-(4-dibenzothiophen)-1,1’-biphenyl- 3-boronic acid, 8.8 mL of 2M aqueous potassium carbonate solution, 100 mL of toluene, and 10 mL of ethanol were placed in a three-necked flask, and the inside was purged with nitrogen. After degassing by stirring the flask under reduced pressure, 0.84 g of bis(triphenylphosphine)palladium(II) dichloride (abbreviation: PdCl2(PPh3)2) was added, and the mixture was stirred at 80 °C for 18 hours to cause a reaction. After a predetermined time had elapsed, the resulting suspension was suction filtered and washed with water and ethanol. The obtained solid was dissolved in toluene and filtered through a filter aid composed of Celite, alumina, and Celite stacked in that order. After filtration, recrystallization was carried out using a mixed solvent of toluene and hexane to obtain the target product (

[0324] pale yellow solid, yield 2.66 g, yield 82%).

[0325] 2.64 g of the obtained pale yellow solid was sublimation-purified by the train sublimation method. The sublimation purification conditions were as follows: while flowing argon gas at a flow rate of 15 mL / min under a pressure of 2.6 Pa, the solid was heated at 3 15 °C. After sublimation purification, the pale yellow solid of the target product was obtained in a yield of 2.34 g and a yield of 89 % Obtained in %. The synthesis scheme of Step 3 is shown below.

[0326]

Chemical formula

[0327] In addition, the nuclear magnetic resonance spectroscopy ( 1 1H-NMR) analysis results of the pale yellow solid obtained in Step 3 above are shown below. From these results, it was found that 9mDBtBPNfpr was obtained. .

[0328] 1 1H-NMR. δ(CD2Cl2): 7.47 - 7.51(m, 2H), 7.60 - 7. 69(m, 5H), 7.79 - 7.89(m, 6H), 8.05(d, 1H), 8.10 - 8.11(m, 2H), 8.18 - 8.23(m, 3H), 8.53(s, 1H), 9 .16(d, 1H), 9.32(s, 1H).

[0329] ≪Synthesis method of 8(βN2)-4mDBtPBfpm≫ In Example 1, the synthesis method of 8-[(2,2'-binaphthalene)-6 - yl]-4-[3-(dibenzothiophen-4-yl)phenyl-[1]benzofuro [3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm) will be described. The structure of 8(βN2)-4mDBtPBfpm is shown below.

[0330]

Chemical formula

[0331] <8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophen- 4-yl)phenyl-[1]benzofuro[3,2-d]pyrimidine synthesis> 8-Chloro-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzof uro[3,2-d]pyrimidine 1.21 g, [2,2'-binaphthalen]-6-ylboronic acid 0.857 g, tripotassium phosphate 1.67 g, diglyme 26 mL, t-butanol 0. 583 g were placed in a three-necked flask, and the inside of the flask was degassed by stirring under reduced pressure and then purged with nitrogen. Then.

[0332] This mixture was heated to 60 °C, 18.9 mg of palladium(II) acetate and 61.1 mg of di(1-adamantyl)-n-butylphosphine were added, and the mixture was stirred at 120 °C for 10 hours. Water was added to the reaction solution and suction filtration was performed. The obtained filtrate was washed with water, ethanol and toluene. The filtrate was dissolved in hot toluene and passed through a filter aid filled in the order of celite, alumina, and celite. The obtained solution was concentrated to dryness to obtain a white solid. All of the obtained solid, 0.348 g of [2,2'-binaphthalen]-6-ylboronic acid, 0.621 g of tripotassium phosphate, 13 mL of diglyme, and 0.239 g of t-butanol were placed in a three-necked flask.

[0333] The inside of the flask was degassed by stirring under reduced pressure and then purged with nitrogen. This mixture was heated to 6 0 °C, 8.7 mg of palladium(II) acetate and 25.1 mg of di(1-adamantyl)-n-butylphosphine were added, and the mixture was stirred at 120 °C for 18.5 hours. Water was added to the reaction solution and suction filtration was performed. The obtained filtrate was washed with water, ethanol and toluene. The filtrate was dissolved in hot toluene and passed through a filter aid filled in the order of celite, alumina, and celite. The obtained solution was concentrated to dryness and recrystallized from toluene to obtain the target product.

[0334] ​​​A white solid was obtained in a yield of 1.16 g and a recovery rate of 65%. 1.15 g of the obtained white solid was subjected to sublimation purification by the rain sublimation method. The sublimation purification conditions were a pressure of 2.64 Pa, and while flowing argon gas at a flow rate of 10 mL / min, the solid was heated at 365 °C. After sublimation purification, 8(βN2)-4mDBtPBfpm of the present invention was obtained as 0.958 g (recovery rate 83%, white solid). This synthesis scheme is shown below.

[0335]

Chemical formula

[0336] In addition, the analysis results of the white solid obtained in the above reaction by nuclear magnetic resonance spectroscopy 1 (1H-NMR) are shown below. From these results, it was found that 8(βN2)-4mDBtPBfpm was obtained.

[0337] 1 1H-NMR. δ(CDCl3): 7.50 - 7.757 (m, 4H), 7.64 - 7 .67 (m, 2H), 7.82 (t, 1H), 7.86 - 8.00 (m, 9H), 8.0 5 - 8.09 (m, 2H), 8.14 (d, 1H), 8.22 - 8.26 (m, 5H), 8.69 (s, 1H), 8.74 (d, 1H), 9.07 (s, 1H), 9.35 (s, 1H).

[0338] ≪Synthesis method of 8BP-4mDBtPBfpm≫ In Example 2, the synthesis method of 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), shown as structural formula (xii), will be described. The structure of 8BP-4mDBtPBfpm is shown below.

[0339] [ka]

[0340] <8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophene-4-yl)] Synthesis of [1-(triphenyl)phenyl]-[1]benzofuro[3,2-d]pyrimidine 8-chloro-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzophenone 1.37g of 3,2-d-pyrimidine, 0.657g of 4-biphenylboronic acid, phosphoric acid 1.91 g of tripotassium chloride, 30 mL of diglyme, and 0.662 g of t-butanol were placed in a three-neck flask. The contents of the flask were degassed by stirring under reduced pressure, and the atmosphere was replaced with nitrogen.

[0341] The mixture was heated to 60° C., and 23.3 mg of palladium(II) acetate, di(1-adamantanium) 66.4 mg of (ethyl)-n-butylphosphine was added, and the mixture was stirred at 120°C for 27 hours. Water was added to the reaction mixture, which was then subjected to suction filtration. The residue was washed with water, ethanol, and toluene. The filtered material was dissolved in hot toluene and packed in the order of celite, alumina and celite. The resulting solution was concentrated to dryness and recrystallized from toluene to obtain The target product, a white solid, was obtained in an amount of 1.28 g and a yield of 74%.

[0342] 1.26 g of this white solid was purified by train sublimation. The conditions were a pressure of 2.56 Pa, argon gas flow rate of 10 mL / min, and The solid was heated at ℃. After purification by sublimation, 1.01 g of the target pale yellow solid was obtained with a recovery rate of 80%. The synthesis scheme is shown below.

[0343] [Chemical formula]

[0344] In addition, the analysis results of the pale yellow solid obtained by the above reaction by nuclear magnetic resonance spectroscopy ( 1 1H-NMR) are shown below. From these results, it was found that 8BP-4mDBtPBfpm was obtained.

[0345] 1 1H-NMR. δ(CDCl3): 7.39 (t, 1H), 7.47 - 7.53 (m, 4 H), 7.63 - 7.67 (m, 2H), 7.68 (d, 2H), 7.75 (d, 2H) , 7.79 - 7.83 (m, 4H), 7.87 (d, 1H), 7.98 (d, 1H), 8 .02 (d, 1H), 8.23 - 8.26 (m, 2H), 8.57 (s, 1H), 8.7 3 (d, 1H), 9.05 (s, 1H), 9.34 (s, 1H).

Explanation of symbols

[0346] 101: Anode, 102: Cathode, 103: EL layer, 111: Hole injection layer, 112: Hole transport layer, 113: Light-emitting layer, 114: Electron transport layer, 115: Electron injection layer, 116: Charge generation layer, 117: P-type layer, 118: Electron relay layer, 119: Electron injection buffer layer, 400: Substrate, 401: Anode, 403: EL layer, 404: Cathode, 405: Sealing material, 406: Sealing material, 407: Sealing substrate, 412: Pad, 420: IC chip, 501: Anode, 502: Cathode , 511: First light-emitting unit, 512: Second light-emitting unit, 513: Charge generation layer, 6 01: Driving circuit section (source line driving circuit), 602: Pixel section, 603: Driving circuit section (gate Line drive circuit), 604: Sealing substrate, 605: Sealing material, 607: Space, 608: Wiring, 6 09: FPC (Flexible Printed Circuit), 610: Element substrate, 611: Switching FET for, 612: FET for current control, 613: Anode, 614: Insulator, 616: EL layer, 617: Cathode, 618: EL device, 951: Substrate, 952: Electrode, 953: Insulating layer, 954: Partition layer, 955: EL layer, 956: Electrode, 1001 Substrate, 1002 Underlying insulating film, 1003 Gate insulating film, 1006 Gate electrode, 1007 Gate electrode, 1008 Gate electrode, 1020 First interlayer insulating film, 1021 Second interlayer insulating film, 1 022 Electrode, 1024W Anode, 1024R Anode, 1024G Anode, 1024B Anode, 1025 Partition, 1028 EL layer, 1029 Cathode, 1031 Sealing substrate, 10 32 Sealing material, 1033 Transparent base material, 1034R Red coloring layer, 1034G Green Coloring layer, 1034B Blue coloring layer, 1035 Black matrix, 1036 Ohmic Overcoat layer, 1037 Third interlayer insulating film, 1040 Pixel portion, 1041 Driving circuit portion , 1042 Peripheral portion, 2001: Housing, 2002: Light source, 2100: Robot, 2110 : Arithmetic unit, 2101: Illuminance sensor, 2102: Microphone, 2103: Upper camera , 2104: Speaker, 2105: Display, 2106: Lower camera, 2107: Obstacle Sensor, 2108: Moving mechanism, 3001: Lighting device, 5000: Housing, 5001: Front Display portion, 5002: Second display portion, 5003: Speaker, 5004: LED lamp, 500 5: Operation key, 5006: Connection terminal, 5007: Sensor, 5008: Microphone, 5 012: Support portion, 5013: Earphone, 5100: Cleaning robot, 5101: Display I. 5102: Camera, 5103: Brush, 5104: Operation Button, 5150: Portable Information Terminal, 5151: Housing, 5152: Display Area, 5153: Bending Portion, 5120: Dust, 52 00: Display Area, 5201: Display Area, 5202: Display Area, 5203: Display Area, 71 01: Housing, 7103: Display Unit, 7105: Stand, 7107: Display Unit, 7109: Op eration Key, 7110: Remote Control Operation Unit, 7201: Main Body, 7202: Housing, 7203: Display Unit, 7204: Keyboard, 7205: External Connection Port, 7206: Pointing Dev ice, 7210: Second Display Unit, 7401: Housing, 7402: Display Unit, 7403: Operation Bo tton, 7404: External Connection Port, 7405: Speaker, 7406: Microphone, 9310: Portable Information Terminal, 9311: Display Panel, 9312: Display Area, 9313: Hinge, 931 5: Housing

Claims

1. A vapor deposition composition obtained by mixing a first organic compound having at least one of a naphthofuropyrazine skeleton and a benzofuropyrimidine skeleton and a second organic compound having at least one of a triarylamine skeleton and a carbazole skeleton, wherein the difference in the 5% weight loss temperature measured by thermogravimetric measurement under a pressure of 0.1 Pa or less between the first organic compound and the second organic compound is 50 degrees or less.

2. In Claim 1, the vapor deposition composition wherein the first organic compound is represented by the following general formula (G1). 【Chemical 1】 (In the formula, Q represents oxygen. Also, Ar ５ represents a substituted or unsubstituted condensed aromatic ring. Also, R １ and R ２ represent a group having 1 to 100 carbon atoms in total, where one is hydrogen and the other has a hole-transporting skeleton.)

3. In Claim 1 or Claim 2, the vapor deposition composition wherein the first organic compound is represented by the following structural formula (100). 【Chemical Formula 2】

4. In Claim 1, the vapor deposition composition wherein the first organic compound is represented by the following general formula (G2). 【Chemical Formula 3】 (wherein, Q represents oxygen. Ar １ , Ar ２ , Ar ３ , and Ar ４ each independently represents a substituted or unsubstituted aromatic hydrocarbon ring, and the substituent of the aromatic hydrocarbon ring is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a monocyclic saturated hydrocarbon group having 5 to 7 carbon atoms, a polycyclic saturated hydrocarbon group having 7 to 10 carbon atoms, or a cyano group, and the number of carbon atoms forming the aromatic hydrocarbon ring is 6 or more and 25 or less. Also, m and n are each 0 or 1. Also, A is a group having 12 to 100 carbon atoms in total, and has any one or more of a benzene ring, a naphthalene ring, a fluorene ring, a phenanthrene ring, a triphenylene ring, a heteroaromatic ring containing a dibenzothiophene ring, a heteroaromatic ring containing a dibenzofuran ring, a heteroaromatic ring containing a carbazole ring, a benzimidazole ring, and a triphenylamine structure. Also, R １ represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted monocyclic saturated hydrocarbon having 5 to 7 carbon atoms, a substituted or unsubstituted polycyclic saturated hydrocarbon having 7 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 12 carbon atoms.)

5. In Claim 1 or Claim 4, the vapor deposition composition wherein the first organic compound is represented by the following structural formula (200) or (201). 【Chemical Formula 4】

6. In any one of Claims 1 to 5, the vapor deposition composition wherein the second organic compound has a bicarbazole skeleton.

7. In Claim 6, the vapor deposition composition wherein in any one of the 2nd to 4th positions of the bicarbazole skeleton, two carbazolyl groups are bonded to each other.

8. In any one of Claims 1 to 5, the vapor deposition composition wherein the second organic compound has a triarylamine skeleton and a carbazole skeleton.

9. In Claim 8, the vapor deposition composition wherein a nitrogen atom in the triarylamine skeleton and the carbazole skeleton are bonded via a phenylene group.

10. In Claim 8 or Claim 9, the vapor deposition composition wherein the carbazole skeleton is bonded at the 2nd to 4th positions or the 9th position.

11. In any one of Claims 1 to 10, the vapor deposition composition wherein the second organic compound has at least one fluorene skeleton.

12. In any one of Claims 1 to 11, the vapor deposition composition wherein the first organic compound and the second organic compound form an exciplex combination.

13. In any one of Claims 1 to 12, the vapor deposition composition wherein the difference in the 5% weight loss temperature is 40 degrees or less.

14. In any one of Claims 1 to 12, the vapor deposition composition wherein the difference in the 5% weight loss temperature is 30 degrees or less.

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