Display device

By positioning the light receiving area between light emitting elements and using time-division imaging, the display device achieves high resolution and enhanced imaging functions without increasing sensor density, addressing manufacturing complexities and costs.

JP2025114764AInactive Publication Date: 2025-08-05SEMICON ENERGY LAB CO LTD
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Patent Information

Application Number
JP2025079535
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2019-07-17
Filing Date
2025-05-12
Publication Date
2025-08-05
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Existing display devices face challenges in achieving high resolution without increasing the density of image sensors, which complicates the manufacturing process and increases costs, and they lack the ability to capture high-resolution images of objects like fingerprints effectively.

Method used

A layout is designed where the light receiving area of the image sensor is positioned between the light emitting areas of multiple light emitting elements on the same substrate, combined with time-division imaging to increase resolution without changing the density of the image sensor.

Benefits of technology

This configuration allows for a display device with improved imaging capabilities and high resolution without increasing manufacturing complexity or costs, enabling features like biometric authentication and touch sensing.

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Abstract

To provide a display device having a function of emitting visible light and infrared light and an imaging function, and achieve higher resolution without changing imaging element density while maintaining image display resolution of the display device to be high.SOLUTION: The display device has a layout in which light receiving regions of imaging elements are provided between light emission regions of a plurality of light-emitting elements on the same substrate. In imaging function of the display device, imaging means for achieving higher resolution achieves higher resolution by performing time-division imaging as imaging without changing imaging element density.SELECTED DRAWING: Figure 10
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Description

[Technical Field]

[0001] TECHNICAL FIELD One embodiment of the present invention relates to a display device or an imaging device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. One aspect relates to an article, a method, or a manufacturing method. Manufacture or composition of matter. More specifically, the technical field of one embodiment of the present invention disclosed in this specification and the like is a semiconductor device, Display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices, input / output devices , their driving methods, or their manufacturing methods can be cited as examples.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to semiconductor devices in general, including semiconductor elements such as transistors, semiconductor circuits, arithmetic units, and memory devices. The device is one aspect of a semiconductor device. devices, input / output devices, electro-optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.) ), and electronic devices may include semiconductor devices. [Background technology]

[0004] An imaging panel having a plurality of imaging pixels on an insulating surface of a substrate is known (Patent Document 1). The imaging pixels are made up of a number of windows that transmit visible light and are arranged in a matrix. and a detection circuit to which the signal is supplied. do. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-005280 Summary of the Invention [Problem to be solved by the invention]

[0006] One aspect of the present invention is to provide a display device that has a function of emitting visible light and infrared light. An object of one embodiment of the present invention is to provide a highly convenient display device. An object of one embodiment of the present invention is to provide a multifunctional display device. An object of one embodiment is to provide a novel display device.

[0007] One embodiment of the present invention provides a display device that has a function of emitting visible light and infrared light and an imaging function. One of our goals is to provide

[0008] The resolution of the imaging function is mainly determined by the density of the imaging element used. Increasing the number of image elements can reduce the resolution of the display device and complicate the process. This may lead to

[0009] To make a full-color display device, at least three types of light-emitting elements, R, G, and B, are arranged. The display surface of the display device is limited, and the light-emitting area of the light-emitting element and the light-receiving area of the image sensor are all located at the same distance. Therefore, increasing the number of image sensors requires a smaller area. There are limitations due to limitations in the manufacturing process and precision of the process.

[0010] Therefore, we have developed a method to display images on a display device with high resolution without changing the density of the image sensor. One of the challenges is to improve the quality of the system.

[0011] Also, the display device has a means for capturing high-resolution and accurate images of fingerprints etc. that touch the display surface. It is also an object of the present invention to provide a new device having the above-mentioned features.

[0012] Furthermore, even if the light receiving area is provided on the display surface, the increase in manufacturing costs of the display device is suppressed. This is also one of the challenges. [Means for solving the problem]

[0013] A layout in which the light receiving area of an image sensor is located between the light emitting areas of multiple light emitting elements on the same substrate. The image pickup function of this display device is to further increase the resolution. As an imaging method, time-division imaging is used to increase the resolution without changing the density of the imaging element. .

[0014] Time-division imaging refers to taking multiple images consecutively over a predetermined exposure time. By capturing images continuously at intervals, the image is synthesized using multiple images that are read out by intermittent exposure. In this specification, the first light emitted from the light-emitting region on one side arranged adjacent to the image sensor is 1 exposure (exposure with the first time-division exposure time) and the second exposure from the light-emitting area on the other side (exposure in the second time-division exposure time) are performed in sequence.

[0015] The configuration of the invention disclosed in this specification comprises a light-transmitting substrate and a substrate fixed to face the substrate. a substrate having an insulating surface, and a plurality of light receiving regions and a plurality of light emitting regions on the substrate having the insulating surface; a first light-shielding layer having an opening in a light-transmitting substrate; and a second light-shielding layer that is formed on the first light-shielding layer, the opening of the first light-shielding layer overlapping one of the plurality of light-receiving regions. The second light-shielding layer is disposed so as to overlap a part of one of the light-receiving regions. It is a display device.

[0016] In the above configuration, the plurality of light emitting regions include a green light emitting region, a blue light emitting region, and a red light emitting region. and either one of the infrared emission regions.

[0017] Another aspect of the present invention is a light-transmitting substrate and an insulating substrate fixed to face the substrate. a substrate having an insulating surface, two light-emitting regions on the substrate, and a gap between the two light-emitting regions; a first light-shielding layer having an opening in a light-transmitting substrate; and a second light-shielding layer having a gap therebetween, and the opening of the first light-shielding layer is The second light-shielding layer is arranged to overlap a part of one of the light-receiving regions. The display device is arranged as follows.

[0018] In the above configuration, the light emitting region may be a monochromatic light emitting region, for example, a green light emitting region. do.

[0019] In each of the above configurations, the number of light-emitting regions in the display device is greater than the number of light-receiving regions. It is possible to maintain high image resolution without changing the image sensor density. Higher resolution can be achieved.

[0020] In each of the above configurations, the width of the second light-shielding layer is 5 μm or more and 10 μm or less. Within this range of values, a sufficient S / N ratio can be obtained even when imaging is performed in a time-division manner.

[0021] In each of the above structures, the first light-shielding layer and the second light-shielding layer are made of the same material. If the light-shielding layer and the second light-shielding layer can be formed using the same material and in the same process, the manufacturing process can be simplified. The light receiving element can be built into the display device without significantly increasing the process.

[0022] In each of the above structures, a transparent substrate is provided between the light-transmitting substrate and the substrate having an insulating surface. It contains an organic resin with optical properties.

[0023] In each of the above structures, the light-emitting region is formed by a pixel electrode and an organic compound layer overlapping the pixel electrode. and,

[0024] In each of the above structures, the light receiving region is made of the same material as the organic compound layer that overlaps the pixel electrode. The organic compound layer overlapping the pixel electrode can be formed using the same material and in the same process. If this is possible, it will be possible to incorporate a light-receiving element into a display device without significantly increasing the number of manufacturing steps. . [Effects of the Invention]

[0025] According to one aspect of the present invention, a multi-function display device can be provided. According to one embodiment of the present invention, a display device having a function of emitting visible light and infrared light and an imaging function can be provided. It is possible to provide a display device having the functions.

[0026] According to one embodiment of the present invention, the resolution can be improved without increasing the density of the image sensor. It is possible. [Brief explanation of the drawings]

[0027] [Figure 1] 1A and 1B are cross-sectional views illustrating one embodiment of the present invention. [Figure 2] FIG. 2A shows an example in which two lights are emitted simultaneously, and FIG. 2B is a cross-sectional view showing one embodiment of the present invention. [Figure 3]FIG. 3A is a structure showing the setting conditions for calculation, and FIGS. 3B, 3C, and 3D are comparative examples showing arrangement models. [Figure 4] 4A, 4B, and 4C are arrangement models illustrating this embodiment. [Figure 5] FIG. 5 is a diagram showing the calculation results of the layout model 1. [Figure 6] FIG. 6 is a diagram showing the calculation results of the layout model 6. [Figure 7] Figure 7 is a graph showing a summary of the calculation results for placement models 1, 2, 3, 4, 5, and 6. [Figure 8] Figure 8 is a graph showing the results of comparing the number of received light rays for layout models 1, 2, 3, 4, 5, and 6. [Figure 9] 9A, 9B, 9C, and 9D are cross-sectional views showing an example of a display device, and FIGS. 9E, 9F, 9G, 9H, and 9I are top views showing an example of a pixel. [Figure 10] FIG. 10 is a cross-sectional view showing an example of a display device. [Figure 11] 11A and 11B are circuit diagrams showing an example of a pixel circuit. [Figure 12] FIG. 12A is a perspective view showing an example of an electronic device, and FIG. 12B is a cross-sectional view showing the example of the electronic device. [Figure 13] 13A and 13B are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0028] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the following description, and various modifications in form and details are possible by those skilled in the art. Furthermore, the present invention should not be construed as being limited to the description of the following embodiments. It is not something that can be done.

[0029] (Embodiment 1) 1A and 1B are schematic cross-sectional views of a display device according to one embodiment of the present invention.

[0030] 1A and 1B, a first substrate 51, a second substrate 59, a resin layer 58, a first emitting layer 59, a second emitting layer 59 ... The light emitting element OLED1, the second light emitting element OLED2, the image pickup element OPD, and the element layer 55 are is shown.

[0031] An element layer 55 is provided on the first substrate 51. The element layer 55 includes transistors, capacitors, etc. Includes:

[0032] In addition, both the resin layer 58 and the second substrate 59 are transparent to visible light or infrared light. The second substrate 59 may be a glass substrate, or a film-like plastic substrate. Plastic substrates, such as polyimide (PI), aramid, polyethylene terephthalate ( PET), polyethersulfone (PES), polyethylene naphthalate (PEN), Polycarbonate (PC), nylon, polyether ether ketone (PEEK), poly Polypropylene (PSF), polyetherimide (PEI), polyarylate (PAR), polybutene Use a plastic substrate such as polyethylene terephthalate (PBT) or silicone resin. can be done.

[0033] 1A and 1B show how a fingerprint is captured in a time-division manner. When the second exposure is performed sequentially, FIG. 1A is a schematic diagram showing the state during the first exposure, and FIG. 1B is a schematic diagram showing the state during the first exposure. FIG. 10 is a schematic diagram showing the state during the second exposure.

[0034] In FIG. 1A, light emitted from the first light-emitting element OLED1 is reflected by a finger, and the reflected light is captured by the image sensor O. The area that is mainly imaged is the area that overlaps with the object 52, such as a finger, in FIG. 1A. The range is indicated by the double arrows in the position.

[0035] In addition, in FIG. 1B, the light emitted from the second light emitting element OLED2 is reflected by the finger and is captured. The area that is mainly imaged is the area that overlaps with the object 52 such as a finger. The range indicated by the double arrow is as follows.

[0036] When the first light-emitting element OLED1 and the second light-emitting element OLED2 emit light almost simultaneously, As shown in FIG. 2A, the image sensor OPD is positioned in a wide area (e.g., a finger or other object 5) directly above the image sensor OPD. The reflected light from the area indicated by the double arrow at the position overlapping with 2 is detected.

[0037] On the other hand, if the main component of the detected reflected light is the specular component, as shown in Figure 2B, The light emitted from the second light emitting element OLED1 and the light emitted from the second light emitting element OLED2 are detected. The position where the light is reflected is different. Reflection of light can be broadly divided into two types: specular reflection and diffuse reflection. The specular reflection component is the component where the angle of incidence and the angle of reflection are equal and the reflected light is parallel. In this case, the light emission timing of the first light emitting element OLED1 and the light emission timing of the second light emitting element OLED2 If the reflected light is detected at different timings (time division), it can be detected with a single OPD image sensor. This means that reflected light from multiple locations can be detected without increasing the number of OPDs. This means that the captured image can be made higher in definition.

[0038] Below, optical simulation (ray tracing) is performed to examine the optical system.

[0039] FIG. 3A shows a cross-sectional view of the optical system used in the optical simulation.

[0040] Optical design assuming a pixel density of 212 ppi (pixel size 120 μm square) for the display panel The simulation is performed by placing the image pickup element OPD at the center (X=0) and placing the first The first light-emitting element OLED1 and the second light-emitting element OLED2 are disposed at a distance of 60 μm from each other. The vertical axis configuration (lamination configuration) is also set with film thickness and optical constants that are assumed for a display panel. (Detailed conditions are also shown in FIG. 3A.) The thickness of the resin layer 58 is 10 μm, and its refractive index is The refractive index n is 1.6. The thickness of the substrate (second substrate 59) is 200 μm. The width of the opening of the light-shielding layer 45 is 20 μm. In this example, the width of the light receiving region is also set to 20 μm. The scatterer width is 60 μm (equivalent to 424 ppi).

[0041] FIG. 3B shows a light-shielding layer arrangement model 1 as a comparative example. corresponds to Figure 3A.

[0042] FIG. 3C shows another comparative example of light-shielding layer arrangement model 2. The width of the opening is set to 30 μm.

[0043] FIG. 3D shows another comparative example of light-shielding layer arrangement model 3. The light-shielding layer arrangement model 3 is The width of the opening is set to 10 μm.

[0044] In the above simulation, a completely scattering object (subject) was placed on the second substrate 59. The change in the amount of light detected by the OPD image sensor was simulated while shifting its position in the X-axis direction. This allows us to determine the position where the scattering object is located and the strongest reflected light is received. In other words, it is possible to check from which position the reflected light is received most strongly. How the lighting state of the first light-emitting element OLED1 and the second light-emitting element OLED2 is affected by this? Check whether

[0045] The results of the comparative example (arrangement model 1) are shown in FIG.

[0046] As shown in Figure 2B, when both light-emitting elements are turned on, the light is scattered from the center at X=0. When the disturbance object is placed (directly above the OPD), the number of received light rays is the largest. On the other hand, only the first light-emitting element OLED1 and the second light-emitting element OLED When only 2 is turned on, the center position of the scatterer where the number of received rays is the maximum is From X=0, the first light-emitting element OLED1 side and the second light-emitting element OLED2 side are approximately 4 It can be seen that the deviation is about 0 μm, and in larger cases, it is about 50 μm.

[0047] Therefore, the first light-emitting element OLED1 and the second light-emitting element OLED2 are alternately turned on and imaged. This allows the detection of reflection components mainly from different positions, which is the principle shown in Figure 2B. However, in FIG. 5, there is a first Even if only the light emitting element OLED1 is lit, the OLED2 side (the scatterer center position is 0) In addition, a second reflection component was detected near -30 μm in Figure 5. Even if only the optical element OLED2 is lit, the OLED1 side (the center position of the scatterer is smaller than 0) In this way, in the comparative example (arrangement model 1), the S / The N ratio is not sufficient.

[0048] The S / N ratio represents the ratio of the white level to the black level of the entire signal received by the image sensor OPD. The level is measured when a certain amount of light is irradiated, and the black level is measured when light is blocked. It is determined.

[0049] Furthermore, the two comparative examples (arrangement models 2 and 3) both resulted in low S / N ratios.

[0050] Therefore, in order to improve the S / N ratio, the island-shaped light-shielding layer (second light-shielding layer 44) is arranged as one imaging element. The light-shielding layer 4 is provided at a position overlapping a part of the light-receiving region of the daughter OPD. 4) is disposed apart from the other light-shielding layer (first light-shielding layer 45) and is not in contact with it. The elements 45 may be connected to each other in a grid pattern on a plane.

[0051] FIG. 4A shows an arrangement model 4 in which the width of the second light-shielding layer 44 is 5 μm. In this case, the minimum width of the light-shielding layer processing precision is about 5 μm, so a light-shielding layer with a width of less than 5 μm It is difficult to form the second light-shielding layer 44. The width is 20 μm.

[0052] FIG. 4B shows an arrangement model 5 in which the width of the second light-shielding layer 44 is 10 μm. The width of the opening in the optical layer 45 is 20 μm, which is the same as that of the arrangement model 1.

[0053] FIG. 4C shows an arrangement model 6 in which the width of the second light-shielding layer 44 is 10 μm. The width of the opening in the optical layer 45 is 30 μm.

[0054] The calculation results using Model 6 in Figure 4C are shown in Figure 6. The S / N ratio is improved compared to Figure 5. Even if only OLED1 is lit, the OLED2 side (in the scattering medium) is lit up at around 60 μm. Almost no reflection components were detected in the area where the center position is greater than 0.

[0055] Moreover, a summary of the calculation results for placement models 1, 2, 3, 4, 5, and 6 is shown in Figure 7.

[0056] In Figure 7, the condition when OLED1 is turned on is as shown in Figure 3A, with a scatterer placed directly above it. Since the LED is not illuminated, it will be black (= low light receiving number). Since a scatterer is placed, it becomes white (= high number of received light rays). Therefore, when OLED2 is lit The number of light rays / number of light rays when OLED1 is lit corresponds to the S / N ratio near the boundary of the scattering object. .

[0057] In the case of the light-shielding layer arrangement models 1, 2, and 3, which differ only in the size of the opening of the light-shielding layer, Although the number of light rays itself increases or decreases according to the aperture, there is a clear tendency for the S / N ratio itself to remain unchanged. On the other hand, in the layout models 4, 5, and 6 in which the second light-shielding layer 44 is arranged on the OPD, It can be seen that the S / N ratio improves.

[0058] Here, the number of received light rays when OLED2 is lit and when both OLED1 and OLED2 are lit simultaneously Figure 8 shows the results of comparing the number of received light rays when

[0059] From the results of FIG. 8, the layout models 4, 5, and 6 in which the second light-shielding layer 44 is arranged directly above the OPD Number of light rays when OLED2 is lit and number of light rays received when both OLED1 and OLED2 are lit From these results, it can be seen that there is no significant difference in the number of OLEDs. Even if the optical axis is turned off, the reflected light reaches the OPD, causing a decrease in the S / N ratio. This shows that the area was located directly above the OPD, i.e., directly above the exposure area. The second light-shielding layer 44 blocks the light from the In Figure 7, the S / N ratio is improved for layout models 4, 5, and 6.

[0060] (Embodiment 2) In this embodiment, the top surface and cross-sectional structures of the OPD shown in Embodiment 1 will be described below. do.

[0061] The display device exemplified below has a function of displaying an image and a function of capturing an image of a subject that overlaps the screen. It is a device that has the following functions.

[0062] The display device of this embodiment mode has a light-receiving element and a light-emitting element in a display portion. The display unit has light-emitting elements arranged in a matrix, and an image is displayed on the display unit. can be done.

[0063] The display unit has light receiving elements arranged in a matrix. The light receiving section can be used as an image sensor or a touch sensor. In other words, by detecting light with the light receiving unit, image data is acquired, or in other words, imaging is performed. It is possible to detect the proximity or contact of an object (such as a finger or pen).

[0064] In the display device of this embodiment, when the object reflects light emitted from the light-emitting element included in the display portion, The light-receiving element can detect the reflected light, allowing for imaging and touch (including near-touch) even in dark places. (including detection) is possible.

[0065] The display device of this embodiment mode has a function of displaying an image using a light-emitting element. The light-emitting element functions as a display element.

[0066] The light-emitting element is an OLED (Organic Light Emitting Diode). ode) and QLED(Quantum-dot Light Emitting Dio) It is preferable to use an EL element such as a fluorescent material. Light-emitting materials (fluorescent materials), phosphorescent materials (phosphorescent materials), inorganic compounds (quantum dots) materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence Activated Delayed Fluorescence (TADF) materials, etc. As a light emitting element, micro LED (Light Emitting Diode) An LED such as a LED (LED) can also be used.

[0067] The display device of this embodiment mode has a function of detecting light using a light-receiving element.

[0068] When the light receiving element is used as an image sensor, the display device of the present embodiment uses the light receiving element. An image can be captured by the above method.

[0069] For example, an image sensor can be used to acquire data such as fingerprints, palm prints, or irises. That is, the display device of this embodiment can incorporate a biometric authentication sensor. By incorporating a biometric authentication sensor into the display device, it is possible to install a biometric authentication sensor separately from the display device. Compared to when a capacitor is provided, the number of components in the electronic device can be reduced, making the electronic device smaller and lighter. It can be quantified.

[0070] In addition, an image sensor is used to measure the user's facial expression, eye movement, or changes in pupil diameter. By analyzing this data, the user's physical and mental information can be obtained. Based on this information, the display and / or audio output contents can be changed. By doing so, for example, it will be possible to develop devices for VR (Virtual Reality) and AR (A Devices for Augmented Reality (MR) or Mixed Reality (MR) y) devices, it is possible to ensure that users can use the devices safely.

[0071] In addition, when the light receiving element is used as a touch sensor, the display device of the present embodiment uses the light receiving element as It can be used to detect the proximity or contact of an object.

[0072] As the light receiving element, for example, a pn-type or pin-type photodiode can be used. The light receiving element acts as a photoelectric conversion element that detects the light incident on the light receiving element and generates an electric charge. The amount of charge generated is determined based on the amount of incident light.

[0073] In particular, an organic photodiode having a layer containing an organic compound is used as the light receiving element. The organic photodiode can be easily made thin, lightweight, and large in area, and Furthermore, since there is a high degree of freedom in shape and design, it can be applied to a variety of display devices.

[0074] In one embodiment of the present invention, an organic EL element is used as the light-emitting element, and an organic photodiode is used as the light-receiving element. The organic photodiode uses a layer that can be configured in common with the organic EL element. Therefore, it is possible to incorporate a light-receiving element into a display device without significantly increasing the number of manufacturing steps. For example, the active layer of the light receiving element and the light emitting layer of the light emitting element can be separately formed, and the other layers can be The light emitting element and the light receiving element can have the same configuration.

[0075] 9A, 9B, 9C, and 9D are schematic cross-sectional views of a part of a display device according to one embodiment of the present invention. show.

[0076] The display device 50A shown in FIG. 9A includes a light receiving element 51 and a second substrate 59 between them. and a layer 57 having a light-emitting element.

[0077] The display device 50A and the display device 50B emit red (R), green (G), and blue light from the layer 57 having the light-emitting elements. The LED emits light of green (G) and blue (B).

[0078] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more sub-pixels. One sub-pixel has one light-emitting element. For example, The pixel has three sub-pixels (three colors of R, G, and B, or yellow (Y), cyan (C), and magenta (M), or a configuration having four sub-pixels (R, G, You can apply four colors (red, green, blue, white, or red, green, blue, and yellow) to the image. The pixel has a light receiving element. The light receiving element may be provided in all pixels, or in some pixels. Furthermore, one pixel may have a plurality of light receiving elements.

[0079] The transistor-containing element layer 55 includes a first transistor and a second transistor. The first transistor is preferably electrically connected to the light receiving element. The transistor is electrically connected to the light emitting element.

[0080] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger that is in contact with the display device. For example, as shown in FIG. 9C, a layer 57 having a light-emitting element may have a light-emitting layer. The light emitted by the light element is reflected by the subject 52, such as a finger, that touches the display device 50B. The light receiving elements in the layer 53 having the light receiving elements detect the reflected light. It is possible to detect that a subject 52 such as a finger has come into contact with the positioning device 50B.

[0081] The display device according to one embodiment of the present invention is located adjacent to the display device 50B (as shown in FIG. 9D). The sensor may have the ability to detect or capture an object (without contact).

[0082] 9E, 9F, 9G, 9H, and 9I show examples of pixels.

[0083] The pixel shown in FIG. 9E and FIG. 9F has three sub-pixels (three light-emitting elements) of R, G, and B, and a light-receiving FIG. 9E shows a 2×2 matrix of three sub-pixels and a light receiving element OPD. FIG. 9F shows an example in which three sub-pixels and a light receiving element OP are arranged in one horizontal row. This is an example where D and

[0084] The pixel shown in FIG. 9G has four sub-pixels (four light-emitting elements) of R, G, B, and W, and a light-receiving element OPD and

[0085] The pixel shown in FIG. 9H includes three sub-pixels of R, G, and B, a light-emitting element IR that emits infrared light, and The optical receiving element OPD has a function of detecting infrared light. The light receiving element OPD has a function of detecting both visible light and infrared light. The wavelength of light to be detected by the light receiving element OPD can be determined depending on the application of the sensor. can be done.

[0086] The pixel shown in FIG. 9I shows two pixels, each having three sub-pixels of R, G, and B. When the first embodiment is used, the photodetector OPD has two pixels and one photodetector OPD. The sub-OPD is driven in a time-division manner. For example, when the sub-OPD is driven in a time-division manner, one of the sub-pixels After R emits light, the other sub-pixel R emits light, and the timing of light emission is shifted to form a single receiving In addition, in imaging driven in a time-division manner, sub-pixels B and C are used. Pixel G does not need to be lit. Figures 9E, 9F, 9G, and 9H show one OP per pixel. The figure shows an example of an arrangement where one OPD is provided for each pixel. The resolution can be approximately twice as high as the resolution of the pixel of the light-emitting element. This is an example of an installation where one OPD is provided per pixel, allowing for a wide total light-emitting area. In addition, even if one OPD is provided for two pixels, by using time-division driving, two OPDs can be installed. The resolution can be the same as that obtained when

[0087] A detailed configuration of a display device according to one embodiment of the present invention will be described below with reference to FIG. do.

[0088] FIG. 10 is a cross-sectional view of a part of a display device 50B capturing an image of a subject 52 in contact with the display surface. Shows.

[0089] The display device 50B includes a light receiving element OPD, a first light emitting element OLED1, a second light emitting element O Has LED2.

[0090] The light receiving element OPD includes a pixel electrode 111, a common layer 112, an active layer 113, a common layer 114, and a and a common electrode 115 .

[0091] The first light-emitting element OLED1 includes a pixel electrode 192, a common layer 112, a light-emitting layer 193a, and a common layer 114 and a common electrode 115 .

[0092] The second light-emitting element OLED2 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193b, and a common layer 114 and a common electrode 115 .

[0093] Pixel electrode 111, pixel electrodes 191 and 192, common layer 112, active layer 113, light-emitting layer 19 3a, 193b, the common layer 114, and the common electrode 115 may each have a single layer structure. It may also have a laminated structure.

[0094] The pixel electrode 111 and the pixel electrodes 191 and 192 are located on the insulating layer 214. The pixel electrodes 111, 191, and 192 are formed from the same material and in the same process. can be done.

[0095] The common layer 112 is located on the pixel electrode 111, the pixel electrode 191, and the pixel electrode 192. The common layer 112 is common to the light receiving element OPD, the light emitting element OLED1, and the light emitting element OLED2. This is a commonly used layer.

[0096] The active layer 113 overlaps with the pixel electrode 111 via the common layer 112. The active layer 113 overlaps with the pixel electrode 191 via the common layer 112. The light-emitting layers 193a and 193b contain a second organic compound different from the first organic compound. Has.

[0097] The common layer 114 is formed on the common layer 112, the active layer 113, and the light-emitting layers 193a and 193b. The common layer 114 is located at the light receiving element OPD, the light emitting element OLED1, and the light emitting element OLED. This is a layer commonly used in both 2.

[0098] The common electrode 115 is connected to the pixel electrode via the common layer 112, the active layer 113, and the common layer 114. The common electrode 115 has a portion overlapping with the common layer 112 and the light-emitting layer 193. a, 193b, and a common layer 114, and has a portion overlapping with the pixel electrode 191. The electrode 115 is used in common by the light receiving element OPD, the light emitting element OLED1, and the light emitting element OLED2. This is the layer where

[0099] In the display device of this embodiment, an organic compound is used for the active layer 113 of the light receiving element OPD. The light receiving element OPD has layers other than the active layer 113 as a light emitting element OLED1 (first EL element). The light emitting element OLED2 (second EL element) can have the same configuration. A process for forming an active layer 113 is added to the manufacturing process of the optical element OLED1 and the light emitting element OLED2. By simply adding the OLED1 and OLED2, the light-receiving element OP is formed in parallel with the formation of the light-emitting element OLED1 and the light-emitting element OLED2. D. Also, the light-emitting element OLED1, the light-emitting element OLED2, and the light-receiving element Therefore, the number of manufacturing steps can be significantly reduced. Therefore, the light receiving element OPD can be built into the display device without any need for a separate optical fiber.

[0100] In the display device 50B, the active layer 113 of the light receiving element OPD and the light emitting layer OLED1 The light-receiving element O is formed in the same manner as the light-receiving element O except that the light-emitting layer 193a of the light-emitting element OLED2 and the light-emitting layer 193b of the light-emitting element OLED3 are separately formed. This shows an example in which the PD, the light emitting element OLED1, and the light emitting element OLED2 have a common configuration. The configuration of the light receiving element OPD, the light emitting element OLED1, and the light emitting element OLED2 is not limited to this. The light receiving element OPD, the light emitting element OLED1, and the light emitting element OLED2 are formed by an active layer 113 and a light emitting layer In addition to 193a and 193b, layers that are separately formed may also be provided. D, the light-emitting element OLED1, and the light-emitting element OLED2 have one layer (common layer) that is used in common. This makes it possible to manufacture a display device without significantly increasing the manufacturing process. A photodetector OPD can be built in.

[0101] The display device 50B has a pair of substrates (a first substrate 51 and a second substrate 59) between which a light receiving element OPD, light-emitting element OLED1, light-emitting element OLED2, transistor 41, transistor 4 2, and transistor 43.

[0102] In the light receiving element OPD, the pixel electrodes 111 and the common electrode 115 are located between the pixel electrodes 111 and the common electrode 115. The common layer 112, the active layer 113, and the common layer 114 are called organic layers (layers containing organic compounds). It is preferable that the pixel electrode 111 has a function of reflecting visible light. The end of the electrode 111 is covered by a partition wall 216. The common electrode 115 is transparent to visible light. It has the function of

[0103] The light receiving element OPD has a function of detecting light. Specifically, the light receiving element OPD It is a photoelectric conversion element that receives light incident from outside the device 50B and converts it into an electrical signal. The light received by the light receiving element OPD is light emitted by the light emitting element 190 and reflected by the object. It can also be done as follows.

[0104] The surface of the second substrate 59 facing the first substrate 51 is provided with a first light-shielding layer 45 and a second light-shielding layer 44. The first light-shielding layer 45 is provided at a position overlapping the light-receiving element OPD and at a position overlapping the light-emitting element 19. 0. By providing the first light-shielding layer 45, the light-receiving element OPD is The range in which the signal is detected can be controlled.

[0105] The first light-shielding layer 45 and the second light-shielding layer 44 are made of a material that blocks light emitted from the light-emitting element. The first light-shielding layer 45 and the second light-shielding layer 44 can absorb visible light. The first light-shielding layer 45 and the second light-shielding layer 44 may be made of, for example, a metal material or a face material. A black matrix is formed using a material (such as carbon black) or a resin material containing a dye. The first light-shielding layer 45 and the second light-shielding layer 44 can be formed with a red color filter. Alternatively, the color filter may have a laminated structure of a green color filter, a blue color filter, and a green color filter.

[0106] Here, the light emitted from the light emitting element OLED1 and the light emitting element OLED2 is reflected by the object 52 However, the light receiving element OPD detects the light reflected by the light emitting element OLED1. The light emitted from the element OLED2 is reflected within the display device 50B and reaches the light receiving element O without passing through the object. The first light-shielding layer 45 suppresses the influence of such stray light. For example, if the first light-shielding layer 45 is not provided, the light-emitting element OLE The light emitted from D2 is reflected by the second substrate 59, and the reflected light is incident on the light receiving element OPD. By providing the first light-shielding layer 45, it is possible to prevent reflected light from entering the light-receiving element OPD. This reduces noise and increases the sensitivity of sensors that use OPD light-receiving elements. It is possible.

[0107] In addition, a second light-shielding layer 44 is provided at a position that partially overlaps the light-receiving element OPD. By providing the layer 44, the light emission timing of the two light emitting elements is shifted, and the image is taken in a time-division manner. Even when imaging, a sufficient S / N ratio can be obtained.

[0108] In the light-emitting element OLED1, the pixel electrodes 192 and the common electrode 115 are located between the pixel electrodes 192 and the common electrode 115. The common layer 112, the light-emitting layer 193a, and the common layer 114 can also be called an EL layer. In the light-emitting element OLED2, the pixel electrode 191 and the common electrode 115 are The common layer 112, the light-emitting layer 193b, and the common layer 114 can also be called an EL layer. do.

[0109] It is preferable that the pixel electrodes 191 and 192 have a function of reflecting visible light. The ends of the pixel electrodes 111 and 192 are covered by the partition wall 216. The pixel electrodes 111 and 112 are electrically insulated from each other by the partition wall 216. The electrodes 192 are electrically isolated from each other by a partition wall 216. The common electrode 115 is visible. It has the function of transmitting light.

[0110] The light-emitting elements OLED1 and OLED2 have the function of emitting visible light. The light-emitting elements OLED1 and OLED2 are connected to the pixel electrode 191 and the common electrode 115. By applying a voltage between the pixel electrode 192 and the common electrode 115, the second substrate 5 It is an electroluminescent element that emits light to the side 9 (see light emission 21).

[0111] The pixel electrode 111 is connected to the transistor 41 through an opening in the insulating layer 214. The end of the pixel electrode 111 is electrically connected to the source or drain of the pixel electrode 111. So it is covered.

[0112] The pixel electrode 191 is connected to the transistor 42 through an opening in the insulating layer 214. The end of the pixel electrode 191 is electrically connected to the source or drain of the pixel electrode 191. The transistor 42 has a function of controlling the driving of the light-emitting element OLED2. Has.

[0113] The pixel electrode 192 is connected to the transistor 43 through an opening in the insulating layer 214. The end of the pixel electrode 192 is electrically connected to the source or drain of the pixel electrode 192. The transistor 43 has a function of controlling the driving of the light-emitting element OLED1. Has.

[0114] The transistors 41, 42, and 43 are arranged in the same layer (in FIG. 10, The first substrate 51 is provided on the first layer.

[0115] At least a part of the circuit electrically connected to the light receiving element OPD is electrically connected to the light emitting element 190. It is preferable that the circuit is formed from the same material and in the same process as the circuit to which it is electrically connected. This allows the thickness of the display device to be thinner than when the two circuits are formed separately. In addition, the manufacturing process can be simplified.

[0116] The light receiving element OPD, the light emitting element OLED1, and the light emitting element OLED2 are each provided with a protective layer 10, the protective layer 195 is preferably formed on the common electrode 115. By providing the protective layer 195, the light receiving element OPD and the light emitting element O The LED 1 and the light-emitting element OLED 2 are prevented from being penetrated by impurities such as water, and the light-receiving element O This can improve the reliability of the PD and the light emitting element 190. In addition, the resin layer 58 provides protection. The protective layer 195 and the second substrate 59 are bonded together.

[0117] FIG. 11A shows an example of a first pixel circuit having a light receiving element, and FIG. 11B shows an example of a first pixel circuit having a light emitting element. 1 shows an example of a second pixel circuit having a transistor.

[0118] The pixel circuit PIX1 shown in FIG. 11A includes a light receiving element OPD, a transistor M1, a transistor The transistor M2, the transistor M3, the transistor M4, and the capacitance element C1. An example is shown in which an organic photodiode is used as the light receiving element OPD.

[0119] The cathode of the photodiode OPD is electrically connected to the wiring V1, and the anode of the photodiode OPD is electrically connected to the transistor M The gate of the transistor M1 is electrically connected to either the source or the drain of the transistor M2. The other of the source and drain is electrically connected to one electrode of the capacitance element C1. The source or drain of the transistor M2 is electrically connected to the gate of the transistor M3. The transistor M2 has a gate electrically connected to the wiring RES and a source or The other of the drains is electrically connected to the wiring V2. One of the inputs is electrically connected to the wiring V3, and the other of the source or drain is connected to the transistor M The gate of the transistor M4 is electrically connected to either the source or the drain of the transistor M4. The other of the source and drain is electrically connected to the wiring OUT1. do.

[0120] A constant potential is supplied to the wiring V1, wiring V2, and wiring V3. When D is driven with a reverse bias, a potential lower than the potential of the wire V1 is applied to the wire V2. The transistor M2 is controlled by a signal supplied to the wiring RES. The potential of the node connected to the gate of the transistor M3 is reset to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX. It has a function to control the timing when the potential of the above node changes depending on the current flowing through the OPD. The transistor M3 acts as an amplifying transistor that outputs an output according to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE. The output corresponding to the potential of the terminal is read out by an external circuit connected to the wiring OUT1. It functions as a star.

[0121] The pixel circuit PIX2 shown in FIG. 11B includes a light-emitting element EL, a transistor M5, a transistor Here, the light-emitting element EL includes: This shows an example using a light-emitting diode. In particular, an organic EL element is used as the light-emitting element EL. It is preferable that

[0122] The transistor M5 has a gate electrically connected to the wiring VG and a source or drain One of the source and drain terminals is electrically connected to the wiring VS, and the other of the source and drain terminals is connected to one of the capacitors C2. The source of the transistor M6 is electrically connected to the electrode of the transistor M1 and the gate of the transistor M6. One of the drain and the anode of the light-emitting element EL is electrically connected to the wiring V4, and the other is electrically connected to the anode and the drain of the light-emitting element EL. and electrically connected to either the source or the drain of the transistor M7. 7, the gate is electrically connected to the wiring MS, and the other of the source and drain is connected to the wiring OUT2 The cathode of the light-emitting element EL is electrically connected to a wiring V5.

[0123] A constant potential is supplied to the wiring V4 and the wiring V5. The transistor M can be set to a high potential and the cathode side can be set to a lower potential than the anode side. 5 is controlled by a signal supplied to the wiring VG, and controls the selection state of the pixel circuit PIX2. The transistor M6 also functions as a select transistor for It functions as a driving transistor that controls the current flowing through the light-emitting element EL according to the potential applied When the transistor M5 is in a conducting state, the potential supplied to the wiring VS is The potential is supplied to the gate, and the luminance of the light emitting element EL can be controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS, and the transistor M6 and the light emitting The potential between the element EL and the element EL is output to the outside via a wiring OUT2.

[0124] In the display device of this embodiment, an image is displayed by making the light emitting element emit light in a pulsed manner. By shortening the driving time of the light emitting element, the power consumption of the display device can be reduced, and In particular, organic EL elements have excellent frequency characteristics, The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0125] Here, the pixel circuit PIX1 has a transistor M1, a transistor M2, a transistor transistor M3, transistor M4, and transistor M5 of pixel circuit PIX2, The transistors M6 and M7 each have a semiconductor layer in which a channel is formed. It is preferable to use a transistor using a metal oxide (oxide semiconductor) for the gate insulating film.

[0126] Using metal oxides with a wider band gap and lower carrier density than silicon The transistor can achieve an extremely small off-state current. The off-state current allows the charge accumulated in the capacitor connected in series with the transistor to be released over a long period of time. Therefore, it is possible to hold the capacitance by connecting the capacitance element C1 or the capacitance element C2 in series. The transistors M1, M2, and M5 connected to It is preferable to use a transistor in which a semiconductor is applied. Similarly, by using a transistor including an oxide semiconductor, the manufacturing cost of the transistor can be reduced. It is possible.

[0127] In addition, the transistors M1 to M7 have a semiconductor in which a channel is formed. It is also possible to use transistors that use silicon. By using highly crystalline silicon such as silicon dioxide, high field-effect mobility can be achieved. This is preferable because it allows for faster operation.

[0128] In addition, an oxide semiconductor is used for at least one of the transistors M1 to M7. In addition, a silicon-based transistor is used. Good too.

[0129] In addition, in FIGS. 11A and 11B, the transistors are n-channel transistors. However, a p-channel transistor can also be used.

[0130] The transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are It is preferable that they are formed side by side on the same substrate. The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed in one area and periodically It is preferable to have a configuration in which the electrodes are arranged.

[0131] In addition, a transistor and a capacitor are provided at a position overlapping the light receiving element OPD or the light emitting element EL. It is preferable to provide one or more layers having one or both of the above. The effective area occupied by the circuit can be reduced, and a high-definition light receiving section or display section can be realized.

[0132] The configuration examples exemplified in this embodiment and the corresponding drawings etc. are at least partly The above can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0133] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0134] (Embodiment 3) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. 12 and 13. do.

[0135] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be applied to the display portion. The device has a light detection function, so it can perform biometric authentication on the display or by touch. This allows for the detection of touch or near-touch, which can improve the functionality and convenience of electronic devices. can be increased.

[0136] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information Examples include terminals, sound reproduction devices, etc.

[0137] The electronic device of this embodiment is a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, , distance, light, liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared radiation) It may be possible.

[0138] The electronic device of this embodiment can have various functions. For example, various information ( Still images, videos, text images, etc.) on the display, touch panel function, calendar It has the functions of displaying the date, time, etc., and running various software (programs). functions, wireless communication functions, and functions to read programs or data recorded on recording media. They may have abilities, etc.

[0139] The electronic device 6500 shown in FIG. 12A is a portable information device that can be used as a smartphone. It is a news terminal.

[0140] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, and a 504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0141] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0142] FIG. 12B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0143] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. The space surrounded by the protective member 6510 is provided with a display panel 6511, an optical member 6512, a tab The touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. do.

[0144] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The flannel 6513 is fixed by an adhesive layer (not shown).

[0145] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. IC6516 is mounted on the FPC6515, which is mounted on the printed circuit board 6517. is connected to the terminal.

[0146] The display of one embodiment of the present invention can be applied to the display panel 6511. This allows for extremely lightweight electronic devices. This allows the electronic device to be equipped with a large-capacity battery 6518 while keeping the thickness of the electronic device small. , fold back a part of the display panel 6511 and connect it to the FPC 6515 on the back side of the pixel area. By arranging the display panel in this manner, it is possible to realize an electronic device with a narrow frame.

[0147] FIG. 13A shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 72 13, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being done.

[0148] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0149] FIG. 13B shows an example of digital signage.

[0150] The digital signage 7300 shown in FIG. 13B includes a housing 7301, a display unit 7000, and It also has a speaker 7303, etc., and an LED lamp, an operation key (power switch, or It can have a control switch, connection terminals, various sensors, a microphone, etc. .

[0151] In FIG. 13B, the display device of one embodiment of the present invention can be applied to the display portion 7000. Cut.

[0152] The larger the display unit 7000, the more information can be displayed at once. The wider the display unit 7000, the more easily it will be noticed by people, which can increase the effectiveness of advertising, for example. can.

[0153] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is not only a display but also allows users to operate it intuitively, which is desirable. When used to provide information such as road traffic information, intuitive operation is required. This can further improve usability.

[0154] As shown in FIG. 13B, the digital signage 7300 can be used to display the It is preferable that the device can be linked to an information terminal 7311 such as a smartphone via wireless communication. For example, the advertisement information displayed on the display unit 7000 may be displayed on the screen of the information terminal 7311. In addition, by operating the information terminal 7311, the display of the display unit 7000 can be displayed. You can switch between

[0155] In addition, the digital signage 7300 displays the screen of the information terminal 7311 as an operation means (controller It is also possible to run games with other users. You can join the game and have fun at the same time.

[0156] The configuration examples exemplified in this embodiment and the corresponding drawings etc. are at least partly The above can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0157] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0158] 21: light emission, 41: transistor, 42: transistor, 43: transistor, 44: 2: light-shielding layer, 45: first light-shielding layer, 50A: display device, 50B: display device, 51: first Substrate, 52: object, 53: layer, 55: element layer, 57: layer, 58: resin layer, 59: second Substrate, 111: pixel electrode, 112: common layer, 113: active layer, 114: common layer, 115: Common electrode, 190: light emitting element, 191: pixel electrode, 192: pixel electrode, 193a: light emitting layer , 193b: light-emitting layer, 195: protective layer, 214: insulating layer, 216: partition wall, 6500: electron Equipment, 6501: Housing, 6502: Display, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510 : Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery ,7000: Display unit, 7200: Notebook personal computer, 7211: Housing, 7 212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device

Claims

1. a first substrate; a second substrate facing the first substrate; a light-emitting element disposed between the first substrate and the second substrate; an imaging element disposed between the first substrate and the second substrate; a first light-shielding layer disposed between the first substrate and the second substrate and having a region in contact with the second substrate; a second light-shielding layer disposed between the first substrate and the second substrate and having a region in contact with the second substrate, the first light-shielding layer has a first opening and a second opening, the first opening has a region overlapping with the light emitting element, the second opening has a region overlapping with the imaging element, The display device, wherein the second light-shielding layer is disposed at a distance from the first light-shielding layer in the second opening and has a region that overlaps with the imaging element.

2. In claim 1, The display device wherein the light emitting element is one of green light emitting, blue light emitting, red light emitting, and infrared light emitting.

Citation Information

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