Conductive substrate and touch panel

Abstract

To provide a conductive substrate capable of reducing time-dependent degradation of corrosion resistance of conductive fine lines, and a touch panel having the conductive substrate.SOLUTION: A conductive substrate having a base material and conductive fine lines arranged on the base material, wherein the conductive fine lines contain a metal and at least one specific compound selected from the group consisting of a compound represented by formula (1A) and a compound represented by formula (1B).SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a conductive substrate and a touch panel. [Background technology]

[0002] Conductive substrates having conductive thin wires (thin wire-like wiring that exhibits conductivity) are widely used in a variety of applications, such as touch panels, solar cells, and EL (electroluminescence) elements. In particular, in recent years, the rate at which touch panels are installed in mobile phones and portable game devices has increased, and the demand for conductive substrates for capacitive touch panels that are capable of multi-point detection has been rapidly expanding.

[0003] For example, Patent Document 1 discloses a technology relating to a method for manufacturing an electrode pattern sheet having a plurality of repeating units each consisting of an image unit having a conductive pattern made of metal and a peripheral wiring portion connected to the conductive pattern, and a non-conductive portion that disables connection between adjacent image units. As methods for forming the conductive pattern and the peripheral wiring portion, a printing method, a photolithography method, and a method using a silver halide photographic photosensitive material as a conductive material precursor are described. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-133239 Summary of the Invention [Problem to be solved by the invention]

[0005] Such touch panels are equipped with a conductive substrate and various other components mounted therearound. Furthermore, during use of the touch panel, the conductive substrate is exposed to various components present in the surrounding environment. Depending on the types of components present in these surrounding components and the surrounding environment, the performance of the conductive substrate may be affected. The present inventors have studied conductive substrates having conductive thin wires with reference to Patent Document 1 and have found that there is room for further improvement in suppressing deterioration over time of the corrosion resistance of the conductive thin wires when the conductive substrate is used for a long period of time.

[0006] In view of the above circumstances, an object of the present invention is to provide a conductive substrate that suppresses deterioration over time of the corrosion resistance of conductive thin wires, and a touch panel having the conductive substrate. [Means for solving the problem]

[0007] As a result of extensive research into the above-mentioned problems, the present inventors have found that the above-mentioned problems can be solved by the following configuration.

[0008] [1] A conductive substrate having a base material and conductive thin wires arranged on the base material, the conductive thin wires containing a metal and at least one specific compound selected from the group consisting of a compound represented by formula (1A) described later and a compound represented by formula (1B) described later. [2] Q and Y 1

[0013] The conductive substrate according to [1], wherein each independently represents a hydroxyl group or a sulfonamide group. [3] The conductive substrate according to [1] or [2], wherein r represents an integer of 1 or more, and s represents an integer of 2 or more. [4] The conductive substrate according to any one of [1] to [3], wherein the specific compound has a molecular weight of 700 or more. [5] Q and Y 1 each independently represent a hydroxyl group or a sulfonamide group, r represents an integer of 1 or more, s represents an integer of 2 or more, and the molecular weight of the specific compound is 700 or more. [6] A light-emitting device further comprising a transparent insulating part that does not contain metal and is disposed adjacent to the thin conductive wires on the substrate, the transparent insulating part containing a specific compound, and the content of the specific compound per total area of the thin conductive wires and the transparent insulating part is 7 to 25 nmol / cm 2 The conductive substrate according to any one of [1] to [5], [7] The conductive substrate according to any one of [1] to [6], wherein the metal includes silver. [8] The substrate does not have a transparent insulating portion adjacent to the thin conductive wires, and the content of the specific compound per area of the surface of the substrate on which the thin conductive wires are arranged is 0.01 to 2.5 nmol / cm 2 The conductive substrate according to any one of [1] to [5], [9] The conductive substrate according to any one of [1] to [8], which has a mesh pattern formed by the conductive thin wires.

[10] A touch panel having the conductive substrate according to any one of [1] to [9]. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a conductive substrate in which deterioration over time of the corrosion resistance of conductive thin wires is suppressed, and also to provide a touch panel having the conductive substrate. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view showing an example of the configuration of a conductive substrate of the present invention. [Figure 2] 1 is a plan view showing an example of a mesh pattern formed by conductive thin wires of a conductive substrate of the present invention. [Figure 3] 1 is a plan view showing an example of the configuration of a touch sensor film to which the conductive substrate of the present invention is applied. [Figure 4] FIG. 2 is a plan view showing an example of the configuration of lead wiring and detection electrodes of the touch sensor film. [Figure 5] 10 is a plan view showing an example of the configuration of an external connection terminal of the touch sensor film. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0011] The conductive substrate of the present invention will be described in detail below with reference to the drawings. The following description of the components is based on a representative embodiment of the present invention, and the present invention is not limited to such an embodiment. Also, the drawings shown below are examples for explaining the present invention, and the present invention is not limited by the drawings shown below. In this specification, a numerical range expressed using "to" means a range that includes the numerical values before and after "to" as the lower and upper limits. In this specification, when two or more types of a component are present, the "content" of that component means the total content of those two or more components. In the present specification, in the numerical ranges described in stages, the upper or lower limit value described in a certain numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in the present specification, the upper or lower limit value described in a certain numerical range may be replaced with a value shown in the examples. In this specification, the term "polymer" or "polymer compound" refers to a compound having a weight-average molecular weight of 2000 or more. Here, the weight-average molecular weight is defined as a polystyrene-equivalent value measured by GPC (Gel Permeation Chromatography). In this specification, angles expressed by specific numerical values and expressions relating to angles such as "parallel," "perpendicular," and "orthogonal" include error ranges generally accepted in the relevant technical field unless otherwise specified. As used herein, a combination of two or more preferred embodiments is a more preferred embodiment.

[0012] In this specification, the bonding direction of a divalent group (e.g., -CO-O-, etc.) is not limited unless otherwise specified. For example, when Y is -CO-O- in a compound represented by the formula "XYZ," the compound may be either "XO-CO-Z" or "X-CO-OZ."

[0013] In this specification, when a formula showing a chemical structure contains a plurality of identical symbols indicating the type or number of groups, the contents of the plurality of identical symbols are independent of each other, and the contents of the same symbols may be the same or different, unless otherwise specified. In this specification, when a formula showing a chemical structure contains a plurality of groups of the same type (for example, alkyl groups, etc.), the specific details of the plurality of groups of the same type are independent of each other, and the specific details of the groups of the same type may be the same or different.

[0014] In this specification, the term "aliphatic hydrocarbon group" refers to, for example, a group obtained by removing one or more (for example, 1 to 5) hydrogen atoms from an aliphatic hydrocarbon. In this specification, the term "aromatic ring group" includes, for example, a group obtained by removing one or more (e.g., 1 to 5, etc.) hydrogen atoms from the above-mentioned aromatic ring. In this specification, the term "aromatic hydrocarbon ring group" includes, for example, a group obtained by removing one or more (e.g., 1 to 5, etc.) hydrogen atoms from the above-mentioned aromatic hydrocarbon ring, and the term "aromatic heterocyclic group" includes, for example, a group obtained by removing one or more (e.g., 1 to 5, etc.) hydrogen atoms from the above-mentioned aromatic heterocycle. In this specification, the term "aliphatic cyclic group" includes, for example, a group obtained by removing one or more (e.g., 1 to 5, etc.) hydrogen atoms from a ring corresponding to an aliphatic ring (e.g., an aliphatic hydrocarbon ring and an aliphatic heterocyclic ring). In this specification, the term "x-valent group" refers to a group obtained by removing x hydrogen atoms from the structure constituting the group. For example, an x-valent aromatic ring group is a group obtained by removing x hydrogen atoms from an aromatic ring constituting an aromatic ring group.

[0015] In addition, in the present specification, when it is stated that "may have a substituent", the type, position, and number of the substituent are not particularly limited. The number of the substituents may be, for example, 1 or 2 or more, and is often 1 to 3. Examples of the substituents include monovalent non-metallic atomic groups excluding hydrogen atoms, which can be selected, for example, from the following substituent group Y. In this specification, examples of halogen atoms include chlorine atoms, fluorine atoms, bromine atoms, and iodine atoms.

[0016] Substituent group Y: Halogen atoms (-F, -Br, -Cl, -I, etc.), hydroxyl groups, amino groups, carboxylic acid groups and their conjugate base groups, carboxylic anhydride groups, cyanate ester groups, unsaturated polymerizable groups, epoxy groups, oxetanyl groups, aziridinyl groups, thiol groups, isocyanate groups, thioisocyanate groups, aldehyde groups, alkoxy groups, aryloxy groups, alkylthio groups, arylthio groups, alkyldithio groups, aryldithio groups, N-alkylamino groups, N,N-dialkylamino groups, N-arylamino groups, N,N-diarylamino groups, N-alkyl-N-arylamino groups, an acyloxy group, a carbamoyloxy group, an N-alkylcarbamoyloxy group, an N-arylcarbamoyloxy group, an N,N-dialkylcarbamoyloxy group, an N,N-diarylcarbamoyloxy group, an N-alkyl-N-arylcarbamoyloxy group, an alkylsulfoxy group, an arylsulfoxy group, an acylthio group, an acylamino group, an N-alkylacylamino group, an N-arylacylamino group, a ureido group, an N'-alkylureido group, an N',N'-dialkylureido group, an N'-arylureido group, or an N',N'-diarylureido group; N'-Alkyl-N'-arylureido group, N-alkylureido group, N-arylureido group, N'-alkyl-N-alkylureido group, N'-alkyl-N-arylureido group, N',N'-dialkyl-N-alkylureido group, N',N'-dialkyl-N-arylureido group, N'-aryl-N-alkylureido group, N'-aryl-N-arylureido group, N',N'-diaryl-N-alkylureido group, N',N'-diaryl-N-arylureido group, N'-alkyl-N'-aryl-N-alkylureido group , N'-alkyl-N'-aryl-N-arylureido group, alkoxycarbonylamino group, aryloxycarbonylamino group, N-alkyl-N-alkoxycarbonylamino group, N-alkyl-N-aryloxycarbonylamino group, N-aryl-N-alkoxycarbonylamino group, N-aryl-N-aryloxycarbonylamino group, formyl group, acyl group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, N-alkylcarbamoyl group, N,N-dialkylcarbamoyl group, N-arylcarbamoyl group, N,N-diarylcarbamoyl group, N-alkyl-N-arylcarbamoyl group, alkylsulfinyl group, arylsulfinyl group, alkylsulfonyl group, arylsulfonyl group, sulfonyl group (-SO3H) and its conjugate base group, alkoxysulfonyl group, aryloxysulfonyl group, sulfinamoyl group, N-alkylsulfinamoyl group, N,N-dialkylsulfinamoyl group, N-arylsulfinamoyl group, N,N-diarylsulfinamoyl group, N-alkyl-N-arylsulfinamoyl group, sulfamoyl group, N-alkylsulfamoyl group, N,N-dialkylsulfamoyl group, N-arylsulfamoyl group, N,N-diarylsulfamoyl group, N-alkyl-N-arylsulfamoyl group, N-acylsulfamoyl group and its conjugate base group, N-alkylsulfonylsulfamoyl group (-SONHSO(alkyl)) and its conjugate base group, N-arylsulfonylsulfamoyl group (-SONHSO(aryl)) and its conjugate base group, N-alkylsulfonylcarbamoyl group (-CONHSO(alkyl)) and its conjugate base group, N-arylsulfonylcarbamoyl group (-CONHSO(aryl)) and its conjugate base group, alkoxysilyl group (-Si(Oalkyl)3), aryloxysilyl group (-Si(Oaryl)3), hydroxysilyl group (-Si(OH)3) and its conjugate base group, phosphono group (-PO3H2) and its conjugate base group, dialkylphosphono group (-PO3(alkyl)) 2), diarylphosphono group (-PO3(aryl)2), alkylarylphosphono group (-PO3(alkyl)(aryl)), monoalkylphosphono group (-PO3H(alkyl)) and its conjugate base group, monoarylphosphono group (-PO3H(aryl)) and its conjugate base group, phosphonooxy group (-OPO3H2) and its conjugate base group, dialkylphosphonooxy group (-OPO3(alkyl)2), diarylphosphonooxy group (-OPO3(aryl)2), alkylarylphosphonooxy group (-OPO3(alkyl)(aryl)), monoalkylphosphonooxy group (-OPO3H(alkyl)) and its conjugate base group, monoarylphosphonooxy group (-OPO3H(aryl)) and its conjugate base group, cyano group, nitro group, aryl group, alkenyl group, alkynyl group, and alkyl group. Furthermore, if possible, these substituents may or may not be bonded to each other or to the group they substitute to form a ring.

[0017] [Conductive substrate] The conductive substrate according to the present invention includes a substrate and conductive thin wires disposed on the substrate, the conductive thin wires including a metal and at least one specific compound selected from the group consisting of a compound represented by formula (1A) and a compound represented by formula (1B) described later.

[0018] FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a conductive substrate according to the present invention. The conductive substrate 1 shown in Fig. 1 has a base material 2 and a conductive layer 3 disposed on the surface of the base material 2. The conductive layer 3 is a layer composed of conductive thin wires 4 and a transparent insulating portion 5 adjacent to the conductive thin wires 4. 1 has a conductive layer 3 including thin conductive wires 4 and transparent insulating portions 5 adjacent to the thin conductive wires, the conductive substrate according to the present invention may not include transparent insulating portions adjacent to the thin conductive wires. That is, the conductive substrate according to the present invention may have a configuration including thin conductive wires arranged on at least one surface of the base material. In addition, although two thin conductive wires 4 extending in a direction perpendicular to the paper surface are shown in FIG. 1, the arrangement of the thin conductive wires 4 and the number thereof are not particularly limited.

[0019] [Base material] The substrate is not particularly limited in type as long as it is a member capable of supporting the conductive thin wires, and examples thereof include plastic substrates, glass substrates, and metal substrates, with plastic substrates being preferred. The substrate is preferably flexible in that the resulting conductive member has excellent bendability. Examples of flexible substrates include the above-mentioned plastic substrates. The thickness of the substrate is not particularly limited and is often 25 to 500 μm. When the conductive substrate is applied to a touch panel and the substrate surface is used as the touch surface, the thickness of the substrate may exceed 500 μm.

[0020] Materials constituting the substrate are preferably resins with a melting point of approximately 290°C or less, such as polyethylene terephthalate (PET) (258°C), polycycloolefin (134°C), polycarbonate (250°C), acrylic film (128°C), polyethylene naphthalate (269°C), polyethylene (135°C), polypropylene (163°C), polystyrene (230°C), polyvinyl chloride (180°C), polyvinylidene chloride (212°C), and triacetyl cellulose (290°C), with PET, polycycloolefin, or polycarbonate being more preferred. Of these, PET is particularly preferred due to its excellent adhesion to the conductive thin wires. The values in parentheses above are melting points or glass transition temperatures. The total light transmittance of the substrate is preferably 85 to 100%. The total light transmittance is measured according to "Plastics - Determination of total light transmittance and total light reflectance" as defined in JIS (Japanese Industrial Standards) K 7375:2008.

[0021] A primer layer may be disposed on the surface of the substrate. The undercoat layer preferably contains a specific polymer, which will be described later. Use of this undercoat layer further improves the adhesion of the conductive thin wires, which will be described later, to the substrate. The method for forming the undercoat layer is not particularly limited, and examples thereof include a method in which a composition for forming an undercoat layer containing a specific polymer described below is applied to a substrate, and heat treatment is performed as necessary. The composition for forming an undercoat layer may contain a solvent as necessary. The type of solvent is not particularly limited, and examples include solvents used in the composition for forming a photosensitive layer described below. Furthermore, a latex containing particles of the specific polymer may be used as the composition for forming an undercoat layer containing the specific polymer. The thickness of the undercoat layer is not particularly limited, but is preferably 0.02 to 0.3 μm, more preferably 0.03 to 0.2 μm, in terms of better adhesion of the conductive thin wire to the substrate.

[0022] [Conductive thin wire] The conductive thin wires, which contain a metal and a specific compound, are disposed on the substrate. The conductive thin wires are a part that ensures the conductive properties of the conductive substrate by containing the metal.

[0023] <Metal> Metals contained in the conductive thin wires include silver (metallic silver), copper (metallic copper), gold (metallic gold), nickel (metallic nickel), and palladium (metallic palladium), which have superior conductive properties. The conductive thin wires preferably contain at least one of the above metal group, more preferably contain silver or copper, and even more preferably contain silver. The metal contained in the conductive thin wire may be either a simple metal or an alloy, with a simple metal being preferred. The metal contained in the conductive thin wire is preferably simple silver, simple copper, or an alloy containing at least one of silver and copper, more preferably simple silver or simple copper, and even more preferably simple silver.

[0024] In this specification, the term "conductive thin wires" refers to thin wire-like regions that are disposed on the surface of a substrate and are integrally formed of a metal-containing material. For example, the silver halide-free layer formed in step H described below and the protective layer formed in step I described below, together with the thin wire-like metal-containing layer (silver-containing layer) formed in steps A and B described below, constitute the conductive thin wires. The thin conductive wires may or may not be electrically connected to an external member of the conductive substrate, and a part of the thin conductive wires may be a dummy electrode electrically insulated from the outside.

[0025] The metal contained in the conductive thin wire is usually in the form of solid particles. The average particle diameter of the metal is preferably 10 to 1000 nm, more preferably 10 to 200 nm, in equivalent-sphere diameter. The equivalent-sphere diameter is the diameter of a spherical particle having the same volume, and the average particle diameter of metal particles is obtained by measuring the equivalent-sphere diameters of 100 objects and arithmetically averaging them. The shape of the metal particles is not particularly limited, and examples thereof include spherical, cubic, tabular, octahedral, and tetradecahedral shapes. The metal particles may be partially or entirely bonded together by fusion. The conductive thin wire may have a structure in which multiple metals are dispersed in a polymer compound described below, or metal particles may be aggregated in the polymer compound to exist as aggregates. Also, at least some of the multiple metals contained in the conductive thin wire may be bonded to each other by a metal derived from metal ions used in a plating process described below. The metal content of the conductive thin wire is not particularly limited, and is preferably 3.0 to 20.0 g / m in order to provide a conductive substrate with better conductivity. 2 is preferred, and 5.0 to 15.0 g / m 2 is more preferred.

[0026] <Specific compound> The conductive thin wire contains at least one specific compound selected from the group consisting of compounds represented by formula (1A) and compounds represented by formula (1B).

[0027] [ka]

[0028] In formula (1A) and formula (1B), E 1 ~E 6 each independently represents a single bond, —O—, —S—, —NH—, or —NR—. R represents a substituent. B 1 , B 2 , B 3 , and B 4 represent k+1-valent, l+1-valent, m+1-valent, and n+1-valent organic groups, respectively. 1 , B 2 , B 3 , and B 4 At least one of B represents an aromatic ring group having a valence of k+1, l+1, m+1, or n+1, which may have a substituent; 1 and B 2 At least one of these represents an optionally substituted aromatic ring group having a valence of k+1 or 1+1. k, l, m, and n each independently represent an integer of 0 or greater, provided that in formula (1A), the sum of k, l, m, and n is 2 or greater, and in formula (1B), the sum of k and l is 2 or greater. Each L independently represents a divalent organic group. r represents an integer of 0 or greater. T represents an s-valent organic group. s represents an integer of 1 or greater. X 1 ~X 4 and Z 1 ~Z 2 each independently represents a group represented by formula (2). In formula (2), * represents a bonding position. D 1 each independently represents a single bond or a divalent linking group. A 1 each independently represents an aromatic ring group which may have a substituent, or an aliphatic ring group which may have a substituent. Q and Y 1 each independently represents a specific functional group selected from the group consisting of a hydroxyl group, an amino group, a carboxylic acid group, a sulfonic acid group, an amide group, a sulfonamide group, and an alkoxy group. Each p independently represents an integer of 0 or more. Each q independently represents an integer of 0 to 2.

[0029] In the conductive substrate according to the present invention, at least the conductive thin wires contain a specific compound, thereby achieving the effect of suppressing deterioration over time of the corrosion resistance of the conductive thin wires. The reason why the specific compound can suppress deterioration over time of the corrosion resistance of the conductive thin wires is not entirely clear, but the inventors speculate as follows. Note that the following speculation does not limit the mechanism by which the effect is obtained. In other words, even if the effect is obtained by a mechanism other than the one described below, it is still within the scope of the present invention. The specific compound has a predetermined specific functional group that interacts with the metal contained in the conductive thin wire. Furthermore, since the specific compound has a predetermined triazine skeleton and one or more aromatic rings, there are numerous hydrogen bond sites and π-π interaction sites. Due to the above structure, the specific compound easily adheres to the surface of the metal that constitutes the conductive thin wire, and specific compounds can stack with each other. In this way, a corrosion prevention film of the specific compound is formed on the conductive thin wire, and this corrosion prevention film is dense and less likely to undergo decomposition reactions and diffusion over time. As a result, it is presumed that deterioration of the corrosion resistance of the conductive thin wire over time can be suppressed. Hereinafter, in this specification, the excellent performance of suppressing deterioration over time of corrosion resistance of conductive thin wires will also be referred to as "the effect of the present invention is excellent."

[0030] In formula (1A) and formula (1B), E 1 ~E 6 each independently represents a single bond, —O—, —S—, —NH—, or —NR—. R represents a substituent. Examples of the substituent represented by R include those selected from the above-mentioned group Y of substituents, and a linear or branched alkyl group having 1 to 5 carbon atoms is preferred. When a plurality of R's are present, the plurality of R's may be the same or different. E 1 ~E 6 As the alkyl group, a single bond, -S- or -NH- is preferred, a single bond or -NH- is more preferred, and -NH- is even more preferred, in terms of better effects of the present invention.

[0031] E 1 , E 2 , E 3 , E 4 , E 5 , E 6 If there are multiple, there are multiple E 1 , E 2 , E 3 , E 4 , E 5 , or E 6 may be the same or different from each other.

[0032] In formula (1A) and formula (1B), B 1 , B 2 , B 3 , and B 4 represent k+1-valent, l+1-valent, m+1-valent, and n+1-valent organic groups, respectively. B 1 ~B 4 Examples of the organic group represented by the formula (1) include a j-valent hydrocarbon group having 1 to 20 carbon atoms, which may have a heteroatom and which may have a substituent. Here, j refers to k+1, l+1, m+1, or n+1. Examples of the hydrocarbon group having 1 to 20 carbon atoms which may have a heteroatom include an aliphatic hydrocarbon group having 1 to 20 carbon atoms, an aliphatic heterocyclic group having 3 to 20 carbon atoms, and an aromatic ring group having 3 to 20 carbon atoms. Examples of aliphatic hydrocarbons constituting the aliphatic hydrocarbon group having 1 to 20 carbon atoms (preferably 1 to 7 carbon atoms) include linear or branched aliphatic hydrocarbons such as methane, ethane, propane, butane, pentane, hexane, and heptane, as well as aliphatic hydrocarbon rings such as a cyclohexane ring, a cycloheptane ring, a norbornane ring, and an adamantane ring. Examples of the aliphatic heterocycle constituting the aliphatic heterocyclic group having 3 to 20 carbon atoms (preferably 3 to 10 carbon atoms) include a piperidine ring, a tetrahydropyran ring, and a piperazine ring. Examples of the aromatic ring constituting the aromatic ring group having 3 to 20 carbon atoms include an aromatic hydrocarbon ring having 6 to 20 carbon atoms and an aromatic heterocyclic ring having 3 to 20 carbon atoms. Examples of aromatic hydrocarbon rings having 6 to 20 carbon atoms (preferably 6 to 10 carbon atoms) include a benzene ring, a naphthalene ring, and an anthracene ring, and examples of aromatic heterocycles having 3 to 20 carbon atoms (preferably 3 to 10 carbon atoms) include a furan ring, a pyrrole ring, a thiophene ring, a pyridine ring, a thiazole ring, a carbazole ring, an indole ring, and a benzothiazole ring. Examples of the substituent that the hydrocarbon having 1 to 20 carbon atoms which may have a heteroatom include a substituent selected from the above-mentioned group Y of substituents other than the specific functional groups, and a linear or branched alkyl group having 1 to 5 carbon atoms is preferred. Among them, B 1 ~B 4 The j-valent organic group represented by the formula (I) is preferably a j-valent aromatic ring group having 3 to 10 carbon atoms which may have a substituent, or a j-valent aliphatic hydrocarbon group having 1 to 7 carbon atoms which may have a substituent, and more preferably a j-valent benzene ring group which may have a substituent. However, in formula (1A), B 1 , B 2 , B 3 , and B 4 At least one of B represents an aromatic ring group having a valence of k+1, l+1, m+1, or n+1, which may have a substituent; 1 and B 2 At least one of represents an optionally substituted aromatic ring group having a valence of k+1 or 1+1.

[0033] B 1 , B 2 , and B 3 If there are multiple B 1 , B 2 , or B 3 may be the same or different from each other.

[0034] In formula (1A) and formula (1B), k, l, m, and n each independently represent an integer of 0 or more. k, l, m, and n are preferably integers of 0 to 5, more preferably integers of 1 to 5, and even more preferably 1 or 2. In formula (1A), the sum of k, l, m, and n is 2 or more, and is preferably an integer of 2 to 12, and more preferably an integer of 4 to 8. In other words, the value of k+l+r×m+n is 2 or more, and is preferably 2 to 12, and more preferably 4 to 8. In addition, in formula (1B), the sum of k and l is 2 or more, preferably an integer of 2 to 12, and more preferably an integer of 4 to 8. In other words, the value of s×k+s×l is 2 or more, preferably 2 to 12, and more preferably 4 to 8.

[0035] When there are multiple k's, the multiple k's may be the same or different, when there are multiple l's, the multiple l's may be the same or different, and when there are multiple m's, the multiple m's may be the same or different.

[0036] In formula (1A), L represents a divalent organic group. Examples of the organic group include a divalent aromatic ring group which may have a substituent, a divalent aliphatic hydrocarbon group which may have a substituent, a divalent aliphatic heterocyclic group which may have a substituent, -N(R N )-, -CO-, and combinations thereof. Also included are groups combining the above groups with at least one selected from the group consisting of -O-, -NH-, -S-, and -SO2-. R N represents an organic group. N Examples of the organic group represented by the formula include linear or branched alkyl groups having 1 to 5 carbon atoms.

[0037] The aromatic ring group may be either a monocyclic or polycyclic group, and is preferably a monocyclic group. Examples of divalent aromatic ring groups include groups in which two hydrogen atoms have been removed from an aromatic ring, and examples of the aromatic ring include aromatic hydrocarbon rings having 6 to 20 carbon atoms and aromatic heterocycles having 3 to 20 carbon atoms. Examples of aromatic hydrocarbon rings having 6 to 20 carbon atoms include monocyclic aromatic rings such as a benzene ring; and polycyclic aromatic rings such as a naphthalene ring, an anthracene ring, and a fluorene ring. Examples of aromatic heterocycles having 3 to 20 carbon atoms include monocyclic aromatic rings such as a furan ring, a pyrrole ring, a thiophene ring, a pyridine ring, and a thiazole ring; and polycyclic aromatic rings such as a benzothiazole ring, a carbazole ring, and an indole ring. Of the divalent aromatic ring groups, divalent aromatic hydrocarbon ring groups having 6 to 20 carbon atoms are preferred, with divalent benzene ring groups, divalent naphthalene ring groups, and divalent fluorene ring groups being more preferred, and divalent benzene ring groups (phenylene groups) being even more preferred.

[0038] The divalent aliphatic hydrocarbon group preferably has 1 to 12 carbon atoms, and more preferably 1 to 3 carbon atoms. Examples of the divalent aliphatic hydrocarbon group include linear or branched alkylene groups having 1 to 12 carbon atoms, and specific examples include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, a methylhexylene group, and a heptylene group. The divalent aliphatic hydrocarbon group also includes a divalent aliphatic hydrocarbon ring group. The divalent aliphatic hydrocarbon ring group includes a group in which two hydrogen atoms have been removed from an aliphatic hydrocarbon ring. The aliphatic hydrocarbon ring may be either a monocyclic or polycyclic ring, and examples thereof include a cyclohexane ring, a cycloheptane ring, a norbornane ring, and an adamantane ring.

[0039] The divalent aliphatic heterocyclic group may be either monocyclic or polycyclic. Examples of divalent aliphatic heterocyclic groups include groups in which two hydrogen atoms have been removed from an aliphatic heterocycle, and examples of the aliphatic heterocycle include a piperazine ring, a tetrahydrofuran ring, and a piperidine ring.

[0040] Examples of the substituent that the aromatic ring group, aliphatic hydrocarbon group, and aliphatic heterocyclic group may have include groups selected from the above-mentioned substituent group Y other than the specific functional group, and a linear or branched alkyl group having 1 to 5 carbon atoms is preferred.

[0041] The group formed by combining the groups exemplified as the organic group represented by L may be a group formed by combining two or more types of groups, or may be a group in which two or more groups of the same type (for example, aromatic ring groups) are linked via a single bond.

[0042] L is E3 , E 4 , and ,E 6 It is preferable that the atom bonded to the group represented by the following formula (I) is a carbon atom. The carbon atom may be a ring atom. L is preferably a group containing at least one group selected from the group consisting of an optionally substituted divalent aromatic ring group, an optionally substituted divalent aliphatic ring group, and a linear or branched alkylene group, and more preferably a group containing an optionally substituted divalent aromatic ring group. As for L, *-Ar-*, *-Ar-(L 1 -Ar) nl -*, *-Ar-L 1 -Ar-Ar-L 1 -Ar-*, *-Ar-Ar-*, *-Ar-Ar-Ar-*, or *-Cy-L 1 -Cy-* is preferred, *-Ar-*, *-Ar-(L 1 -Ar) nl -*, *-Ar-L 1 -Ar-Ar-L 1 -Ar-* or *-Ar-Ar-* is more preferred. Each Ar independently represents a divalent aromatic ring group which may have a substituent, preferably a divalent aromatic hydrocarbon ring group having 6 to 20 carbon atoms which may have a substituent, and more preferably a phenylene group which may have a substituent. L 1 are each independently -O-, -NH-, -S-, -SO2-, -N(R N )-, -C(=O)-, or a linear or branched alkylene group having 1 to 3 carbon atoms, and is preferably -O-, -S-, -SO2-, or a linear or branched alkylene group having 1 to 3 carbon atoms. nl represents an integer of 1 to 5, and an integer of 1 to 3 is preferred. Each Cy independently represents a divalent aliphatic hydrocarbon ring group or a divalent aliphatic heterocyclic group which may have a substituent, preferably a divalent aliphatic hydrocarbon group which may have a substituent, and more preferably a divalent cyclohexane ring group which may have a substituent. * indicates the bond position.

[0043] When a plurality of L's are present, the plurality of L's may be the same or different.

[0044] In formula (1A), r represents an integer of 0 or more. In terms of achieving better effects of the present invention, r is preferably an integer of 1 or more. The upper limit is preferably 20 or less, more preferably 10 or less, and even more preferably 5 or less.

[0045] In formula (1B), T represents an s-valent organic group. Examples of the organic group include an aromatic ring group which may have a substituent, an aliphatic hydrocarbon group which may have a substituent, an aliphatic heterocyclic group which may have a substituent, -N(R N )-, -CO-, and groups formed by combining these. Also included are groups formed by combining the above groups with at least one selected from the group consisting of -O-, -NH-, -N<, -S-, and -SO2-. N is as described above.

[0046] The aromatic ring group may be either monocyclic or polycyclic. Examples of the aromatic ring constituting the aromatic ring group include the aromatic rings exemplified as the aromatic ring constituting the aromatic ring group represented by L. Of the aromatic ring groups, aromatic hydrocarbon ring groups having 6 to 20 carbon atoms are preferred, a benzene ring group or a naphthalene ring group is more preferred, and a benzene ring group is even more preferred. When T is an s-valent aromatic ring group, examples include groups in which s hydrogen atoms have been removed from the above-mentioned aromatic hydrocarbon ring or aromatic heterocycle.

[0047] Examples of the aliphatic hydrocarbon group include linear or branched aliphatic hydrocarbon groups having 1 to 12 carbon atoms and aliphatic hydrocarbon ring groups having 3 to 12 carbon atoms, and linear or branched aliphatic hydrocarbon groups having 1 to 6 carbon atoms are preferred.

[0048] The aliphatic heterocyclic group may be either monocyclic or polycyclic. Examples of the aliphatic heterocycle constituting the above aliphatic heterocyclic group include the aliphatic heterocycles exemplified as the aliphatic heterocycle constituting the aliphatic heterocyclic group represented by L. When T is an s-valent aliphatic heterocyclic group, examples of the group include groups in which s hydrogen atoms have been removed from the above-mentioned aliphatic heterocycle.

[0049] Examples of the substituent that the aromatic ring group, aliphatic hydrocarbon group, and aliphatic heterocyclic group may have include groups selected from the above-mentioned substituent group Y other than the specific functional group, and a linear or branched alkyl group having 1 to 5 carbon atoms is preferred.

[0050] The group formed by combining the groups exemplified as the organic group represented by T may be a group formed by combining two or more types of groups, or may be a group in which two or more groups of the same type (for example, aromatic ring groups) are linked via a single bond.

[0051] T is E 3 When the group represented by E is a group other than a single bond, 3 The atom bonded to E is preferably a carbon atom. The carbon atom may be a ring atom. 3 When the group represented by E 3 It is preferable that the atom bonded to is a nitrogen atom.

[0052] T preferably contains at least one group selected from the group consisting of an aromatic ring group which may have a substituent, and a linear or branched aliphatic hydrocarbon group. T is preferably an s-valent aromatic hydrocarbon ring group having 6 to 20 carbon atoms which may have a substituent, and more preferably an s-valent benzene ring group which may have a substituent. In addition, T can be -N<, -NH-, -N(R N A group formed by combining at least one group selected from the group consisting of —N—, —O—, and —CO— with an aliphatic hydrocarbon group is also preferred, and —N<, —NH—, and —N(R N)- and a linear or branched aliphatic hydrocarbon group having 1 to 6 carbon atoms are more preferred. Also, as T, *-Ar-*, *-Ar-(L 1 -Ar) nl -*, *-Ar-L 1 -Ar-Ar-L 1 -Ar-*, *-Ar-Ar-*, *-Ar-Ar-Ar-*, or *-Cy-L 1 -Cy-* is also preferred. Ar, L 1 , nl, and Cy are as described above.

[0053] Examples of the compound represented by formula (1B) include a compound represented by formula (1B-1) and a compound represented by formula (1B-2).

[0054] [ka]

[0055] In formula (1B-1), W 1 each independently represents a group represented by formula (W). In formula (W), E 1 ~E 3 , B 1 , B 2 , Z 1 , Z 2 , k, and l are the same as the respective groups in formula (1B). * represents the bonding position.

[0056] In formula (1B-1), L B1 each independently represents a single bond or a divalent organic group. Examples of the divalent organic group include the groups exemplified as the divalent organic group represented by L above, and a linear or branched alkylene group having 1 to 12 carbon atoms is preferred, and a linear or branched alkylene group having 1 to 4 carbon atoms is more preferred.

[0057] In formula (1B-1), L B2 each independently represents a divalent organic group. Examples of the divalent organic group include the groups exemplified as the divalent organic group represented by L above, and a linear or branched alkylene group having 1 to 12 carbon atoms is preferred, and a linear or branched alkylene group having 1 to 4 carbon atoms is more preferred.

[0058] b1 represents an integer of 0 to 3, with 0 or 1 being preferred.

[0059] Multiple Ws 1 may be the same or different, and multiple L B1 may be the same or different. B2 If there are multiple L B2 may be the same or different from each other.

[0060] In formula (1B-2), W 1 each independently represents a group represented by formula (W), where formula (W) is as defined above.

[0061] L B3 each independently represents a single bond or a divalent organic group. Examples of the divalent organic group include the groups exemplified as the divalent organic group represented by L above, and include a divalent aliphatic hydrocarbon group, or a combination of a divalent aliphatic hydrocarbon group and —N(R N )-, -CO-, -O-, -NH-, -S-, and -SO2- are preferred. L B3 Among them, *-Al-L B4 -Al-* or *-Al-* are preferred. Each Al independently represents a linear or branched alkylene group having 1 to 12 carbon atoms, and preferably a linear or branched alkylene group having 1 to 4 carbon atoms. L B4 is -N(R N )-, -CO-, -O-, -NH-, -S-, -SO2-, or a group formed by combining these, and -CO-, -O-, or a group formed by combining these is more preferred. * indicates the bond position.

[0062] R B each independently represents a hydrogen atom or a substituent. Examples of the substituent include those selected from the above-mentioned group Y of substituents, and a linear or branched alkyl group having 1 to 5 carbon atoms is preferred.

[0063] b2 represents 3 or 4, with 3 being preferred.

[0064] Multiple Ws 1 may be the same or different, and multiple L B2 may be the same or different. B If there are multiple R B may be the same or different from each other.

[0065] In formula (1B), s represents an integer of 1 or more. In terms of achieving better effects of the present invention, s is preferably an integer of 2 or more, more preferably an integer of 3 or more. The upper limit is preferably 6 or less, more preferably 4 or less.

[0066] In formula (1A) and formula (1B), X 1 ~X 4 and Z 1 ~Z 2 each independently represents a group represented by formula (2).

[0067] [ka]

[0068] In formula (2), * represents a bonding position.

[0069] In formula (2), D 1 each independently represents a single bond or a divalent linking group. The divalent linking group includes —O—, —S—, —CO—, and —NR N-, -SO2-, alkylene groups, and groups formed from combinations thereof. N is as described above. The alkylene group is preferably a linear or branched alkylene group having 1 to 8 carbon atoms. Among them, D 1 is preferably a group consisting of a combination selected from the group consisting of -O-, -CO-, and an alkylene group, or a single bond, and A -Alkylene group -O-CO-* B , * A -CO-O-alkylene group-* B , * A -O-Alkylene group -O-* B , * A -CO-O-Alkylene group -O-CO-* B , * A -CO-O-Alkylene group -O-* B , or * A -O-Alkylene group -O-CO-* B is more preferred. * A is A 1 is the opposite binding position, and * B is A 1 This is the bonding position with

[0070] In formula (2), A 1 each independently represents an aromatic ring group which may have a substituent, or an aliphatic ring group which may have a substituent.

[0071] The aromatic ring group may be either monocyclic or polycyclic. The aromatic ring preferably has 5 to 20 ring members, more preferably 5 to 16 ring members, and even more preferably 5 to 10 ring members. The aromatic ring group may be either an aromatic hydrocarbon ring group or an aromatic heterocyclic group. The number of heteroatoms contained in the aromatic heterocyclic group is preferably 1 to 5. Examples of the heteroatom include a nitrogen atom, a sulfur atom, an oxygen atom, a selenium atom, a tellurium atom, a phosphorus atom, a silicon atom, and a boron atom, and a nitrogen atom, a sulfur atom, or an oxygen atom is preferred. Examples of the aromatic ring group include a benzene ring group, a naphthalene ring group, an anthracene ring group, a benzothiazole ring group, a carbazole ring group, and an indole ring group.

[0072] The aliphatic cyclic group may be either monocyclic or polycyclic. The aliphatic ring group preferably has 5 to 20 ring members, more preferably 5 to 16 ring members, and even more preferably 5 to 10 ring members. The aliphatic cyclic group may be either an aliphatic hydrocarbon cyclic group or an aliphatic heterocyclic group. Examples of the aliphatic ring group include a cyclohexane ring group, a cycloheptane ring group, a norbornane ring group, and an adamantane ring group.

[0073] In formula (2), Q and Y 1 are each independently a hydroxyl group (-OH), an amino group (-N(R E )2), thiol group (-SH), carboxylic acid group (-COOH), sulfonic acid group (-SO3H2), amide group (-CONH2), sulfonamide group (-SO2NH2), and alkoxy group (-OR A R represents a specific functional group selected from the group consisting of E R each independently represents a hydrogen atom or an alkyl group. A represents an alkyl group (preferably having 1 to 6 carbon atoms). The specific functional group is a group that interacts with a metal, and the presence of the specific functional group enables the specific compound to adhere firmly to the metal surface. The interaction can be a coordinate bond, a covalent bond, an acid-base interaction, or the like, and is typically a coordinate bond. The specific functional group is preferably a hydroxyl group or a sulfonamide group, as these groups provide better effects for the present invention.

[0074] In formula (2), p represents an integer of 0 or more. p is preferably an integer of 0 to 5, more preferably 0 or 1, and even more preferably 0. When p is 0, X 1 ~X 4 or Z 1 ~Z 2But, Y 1 represents a specific functional group represented by the formula:

[0075] In formula (2), q represents an integer of 0 to 2. q is preferably 0 or 1.

[0076] A 1 , D 1 ,Q, Y1, p, and ,q, if there are multiple, there are multiple A 1 , D 1 , Q, Y1, p, or q may be the same or different from each other.

[0077] X 1 , X 2 , X 3 , X 4 , Z 1 , and Z 2 If there are multiple Xs, 1 , X 2 , X 3 , X 4 , Z 1 , or Z 2 may be the same or different from each other.

[0078] B is a specific compound with low light absorption in the visible light region, which can suppress coloration of conductive substrates. 1 ~B 4 When the groups represented by L and T contain a divalent conjugated group, the number of π electrons contained in the divalent conjugated group is preferably 13 or less. Examples of the divalent conjugated group include an aromatic ring group, an alkenylene group, an alkynylene group, and a divalent conjugated group formed by linking these groups. Specifically, for example, the number of π electrons of a phenylene group is 6, and the number of π electrons of a divalent conjugated group represented by -Ph-CH=CH-Ph- (Ph represents a phenylene group) is 14.

[0079] The content of the aliphatic hydrocarbon group in the specific compound is preferably 30.0% or less, more preferably 20.0% or less, and even more preferably 10.0% or less. The lower limit may be 0%. The content of the aliphatic hydrocarbon group is the percentage of the total atomic weight of all atoms constituting the aliphatic hydrocarbon group in the specific compound relative to the molecular weight of the specific compound. The aliphatic hydrocarbon group is an aliphatic group consisting of carbon atoms and hydrogen atoms, containing at least one carbon atom and one hydrogen atom. The carbon atom in the aliphatic hydrocarbon group may be primary, secondary, tertiary, or quaternary. The aliphatic hydrocarbon group may be a monovalent group (e.g., methyl, ethyl, t-butyl, etc.) or a divalent or higher group (e.g., -CH2-, >CH-CH2-, and >CH-CH<).

[0080] The heteroatom content of the specific compound is preferably 15.0% or more, more preferably 20.0% or more, even more preferably 25.0% or more, and particularly preferably 35.0% or more. The upper limit is preferably 65.0% or less, more preferably 55.0% or less. The heteroatom content is the percentage of the total atomic weight of all heteroatoms contained in a specific compound relative to the molecular weight of the specific compound.

[0081] The molecular weight of the specific compound is preferably 350 or more, more preferably 700 or more, and even more preferably 1000 or more, in terms of achieving better effects of the present invention. The molecular weight of the specific compound is preferably 10000 or less, and more preferably 5000 or less, in terms of achieving better solubility in the immersion solvent.

[0082] Of the specific compounds, specific examples of the compound represented by formula (1A) include compounds in which each group in formula (1A) is selected from the groups shown below. E 1 ~E 6 : Single bond, -S-, -NH-, -N(CH3)- B 1 ~B 4 :B-1 to B-6 below k, l, m, n: 0, 1 r:0, 1, 2, 3 X 1 ~X 4 : Hydroxyl group, sulfonamide group, methoxy group L: L-1 to L-17 below

[0083] [ka]

[0084] [ka]

[0085] Specific examples of the compound represented by formula (1B) include compounds in which each group in formula (1B) is selected from the groups shown below. E 1 ~E 3 : Single bond, -S-, -NH-, -N(CH3)- B 1 , B 2 : B-1 to B-6 above k, l: 0, 1 s:1, 2, 3, 4 X 1 ~X 4 : Hydroxyl group, sulfonamide group, methoxy group T: T-1 to T-27 below

[0086] [ka]

[0087] The conductive thin wire may contain only one type of specific compound, or two or more types of specific compounds. When two or more specific compounds are used, the mixing ratio may be adjusted as desired. When the conductive thin wire contains two or more specific compounds, the ratio of the content of one specific compound to the content of the other specific compounds may be, for example, 0.01 to 200 in mass ratio.

[0088] The content of the specific compound is not particularly limited, but when the conductive substrate further has a transparent insulating part described later, the content of the specific compound per total area of the conductive thin wires and the transparent insulating part is 5 to 30 nmol / cm 2 is preferably 7 to 25 nmol / cm2 More preferably, it is 10 to 20 nmol / cm 2 It is more preferable that: In addition, when the conductive substrate does not have a transparent insulating part described later, the content of the specific compound per area of the surface of the base material on which the conductive thin wires are arranged is 0.01 to 2.5 nmol / cm 2 is preferably 0.02 to 1.0 nmol / cm 2 More preferably, the concentration is 0.05 to 0.8 nmol / cm 2 It is more preferable that: When the content of the specific compound is equal to or less than the upper limit, the electrical connectivity (hereinafter also referred to as "FPC connectivity") when the conductive substrate is used as a touch panel connected to an FPC (Flexible Printed Circuit) is better. When the content of the specific compound is equal to or more than the lower limit, the effects of the present invention are better.

[0089] The content of the specific compound can be measured by immersing the conductive substrate in a solvent, extracting the specific compound, and then quantifying the content of the specific compound in the solvent. A detailed method for measuring the content of the specific compound will be described in the Examples below.

[0090] Although the method for incorporating the specific compound into the conductive thin wires is not particularly limited, a method of bringing the conductive thin wires into contact with the specific compound or a composition containing the specific compound during or after the production of a conductive substrate having the conductive thin wires on a base material is preferred. Among these, a method of bringing the conductive thin wires into contact with the composition containing the specific compound by step P described below is more preferred. The content of the specific compound contained in the conductive thin wire can be adjusted by changing the contact time when the conductive thin wire is brought into contact with the specific compound or a composition containing the specific compound, the concentration of the composition, etc.

[0091] <Polymer compounds> The conductive thin wire may contain a polymer compound in addition to the metal and the specific compound. The type of polymer compound contained in the conductive thin wire is not particularly limited, and known polymer compounds can be used. Among them, polymer compounds other than gelatin (hereinafter also referred to as "specific polymers") are preferred because they can form a silver-containing layer and conductive thin wires with superior strength. The type of specific polymer is not particularly limited as long as it is different from gelatin, and a polymer that is not decomposed by proteolytic enzymes or oxidizing agents that decompose gelatin, which will be described later, is preferred. Examples of the specific polymer include hydrophobic polymers (water-insoluble polymers), such as at least one resin selected from the group consisting of (meth)acrylic resins, styrene resins, vinyl resins, polyolefin resins, polyester resins, polyurethane resins, polyamide resins, polycarbonate resins, polydiene resins, epoxy resins, silicone resins, cellulose polymers, and chitosan polymers, or copolymers of monomers constituting these resins. The specific polymer preferably has a reactive group that reacts with a crosslinking agent, which will be described later. The specific polymer is preferably in the form of particles, that is, the conductive thin wire preferably contains particles of the specific polymer.

[0092] The specific polymer is preferably a polymer (copolymer) represented by the following general formula (1). General formula (1): -(A) x -(B) y -(C) z -(D) w - In the general formula (1), A, B, C, and D represent repeating units represented by the following general formulae (A) to (D), respectively.

[0093] [ka]

[0094] R 11 represents a methyl group or a halogen atom, and is preferably a methyl group, a chlorine atom, or a bromine atom. p represents an integer of 0 to 2, preferably 0 or 1, and more preferably 0. R 12 represents a methyl group or an ethyl group, with a methyl group being preferred. R 13 represents a hydrogen atom or a methyl group, and preferably a hydrogen atom. L represents a divalent linking group, and preferably a group represented by the following general formula (2). General formula (2):-(CO-X 1 )rX 2 - In general formula (2), X 1 is an oxygen atom or NR 30 - where R 30 represents a hydrogen atom, an alkyl group, an aryl group, or an acyl group, each of which may have a substituent (e.g., a halogen atom, a nitro group, or a hydroxyl group). 30 is preferably a hydrogen atom, an alkyl group having 1 to 10 carbon atoms (for example, a methyl group, an ethyl group, an n-butyl group, and an n-octyl group), or an acyl group (for example, an acetyl group and a benzoyl group). 1 is preferably an oxygen atom or NH-. X 2 represents an alkylene group, an arylene group, an alkylenearylene group, an arylenealkylene group, or an alkylenearylenealkylene group, and these groups include -O-, -S-, -CO-, -COO-, -NH-, -SO2-, -N(R 31 )- or -N(R 31 )SO2- etc. may be inserted in the middle. R 31 represents a linear or branched alkyl group having 1 to 6 carbon atoms. 2 is preferably a dimethylene group, a trimethylene group, a tetramethylene group, an o-phenylene group, an m-phenylene group, a p-phenylene group, -CH2CH2OCOCH2CH2-, or -CH2CH2OCO(C6H4)-. r represents 0 or 1. q represents 0 or 1, with 0 being preferred.

[0095] R 14represents an alkyl group, an alkenyl group, or an alkynyl group, and is preferably an alkyl group having 5 to 50 carbon atoms, more preferably an alkyl group having 5 to 30 carbon atoms, and even more preferably an alkyl group having 5 to 20 carbon atoms. R 15 is a hydrogen atom, a methyl group, an ethyl group, a halogen atom, or -CH2COOR 16 represents a hydrogen atom, a methyl group, a halogen atom, or -CH2COOR 16 is preferred, and a hydrogen atom, a methyl group, or -CH2COOR 16 is more preferred, and a hydrogen atom is even more preferred. R 16 represents a hydrogen atom or an alkyl group having 1 to 80 carbon atoms, and R 14 may be the same as or different from R 16 The number of carbon atoms is preferably 1 to 70, and more preferably 1 to 60.

[0096] In the general formula (1), x, y, z, and w represent the molar ratio of each repeating unit. x is 3 to 60 mol %, preferably 3 to 50 mol %, and more preferably 3 to 40 mol %. y is 30 to 96 mol %, preferably 35 to 95 mol %, and more preferably 40 to 90 mol %. z is 0.5 to 25 mol %, preferably 0.5 to 20 mol %, and more preferably 1 to 20 mol %. w is 0.5 to 40 mol %, preferably 0.5 to 30 mol %. In the general formula (1), it is preferable that x is 3 to 40 mol %, y is 40 to 90 mol %, z is 0.5 to 20 mol %, and w is 0.5 to 10 mol %.

[0097] The polymer represented by the general formula (1) is preferably a polymer represented by the following general formula (2).

[0098] [ka]

[0099] In the general formula (2), x, y, z and w are as defined above.

[0100] The polymer represented by general formula (1) may contain repeating units other than the repeating units represented by the above general formulae (A) to (D). Examples of monomers for forming other repeating units include acrylic acid esters, methacrylic acid esters, vinyl esters, olefins, crotonates, itaconic acid diesters, maleic acid diesters, fumaric acid diesters, acrylamides, unsaturated carboxylic acids, allyl compounds, vinyl ethers, vinyl ketones, vinyl heterocyclic compounds, glycidyl esters, and unsaturated nitriles. These monomers are also described in paragraphs 0010 to 0022 of Japanese Patent No. 3754745. From the viewpoint of hydrophobicity, acrylic acid esters or methacrylic acid esters are preferred, and hydroxyalkyl methacrylates or hydroxyalkyl acrylates are more preferred. The polymer represented by general formula (1) preferably contains a repeating unit represented by general formula (E).

[0101] [ka]

[0102] In the above formula, L E represents an alkylene group, preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 2 to 6 carbon atoms, and even more preferably an alkylene group having 2 to 4 carbon atoms.

[0103] As the polymer represented by the general formula (1), a polymer represented by the following general formula (3) is particularly preferred.

[0104] [ka]

[0105] In the above formula, a1, b1, c1, d1, and e1 represent the molar ratio of each repeating unit, where a1 represents 3 to 60 (mol%), b1 represents 30 to 95 (mol%), c1 represents 0.5 to 25 (mol%), d1 represents 0.5 to 40 (mol%), and e1 represents 1 to 10 (mol%). The preferred range of a1 is the same as the preferred range of x described above, the preferred range of b1 is the same as the preferred range of y described above, the preferred range of c1 is the same as the preferred range of z described above, and the preferred range of d1 is the same as the preferred range of w described above. e1 is 1 to 10 mol %, preferably 2 to 9 mol %, and more preferably 2 to 8 mol %.

[0106] The specific polymer can be synthesized by referring to, for example, Japanese Patent No. 3305459 and Japanese Patent No. 3754745. The weight average molecular weight of the specific polymer is not particularly limited, but is preferably from 1,000 to 1,000,000, more preferably from 2,000 to 750,000, and even more preferably from 3,000 to 500,000.

[0107] The conductive thin wires may contain materials other than the above-mentioned materials as needed. Examples of the additives include antistatic agents, nucleation accelerators, spectral sensitizing dyes, surfactants, antifogging agents, hardeners, anti-black spot agents, redox compounds, monomethine compounds, and dihydroxybenzenes, as described in paragraphs 0220 to 0241 of JP-A No. 2009-004348. Furthermore, the photosensitive layer may contain physical development nuclei. The conductive thin wire may also contain a crosslinking agent used to crosslink the specific polymers described above. By containing the crosslinking agent, crosslinking between the specific polymers progresses, and the connection between the metals in the conductive thin wire is maintained.

[0108] The line width Wa of the conductive thin wire is preferably less than 5.0 μm, more preferably 2.5 μm or less, and even more preferably 2.0 μm or less, from the viewpoint of making the conductive thin wire less visible. There is no particular lower limit, but from the viewpoint of improving the conductivity of the conductive thin wire, it is preferably 0.5 μm or more, more preferably 1.2 μm or more. The line width of the conductive thin wire means the total length of the conductive thin wire in the direction along the surface of the substrate, which is perpendicular to the direction in which the conductive thin wire extends. The line width Wa of the above-mentioned conductive thin wire is determined by using a scanning electron microscope to select any five points corresponding to the line width of one conductive thin wire, and taking the arithmetic mean value of the line widths of the five points as the line width Wa.

[0109] The thickness T of the conductive thin wire is not particularly limited, but is preferably 0.5 to 3.0 μm, more preferably 1.0 to 2.0 μm. The thickness T of the conductive thin wire described above is determined by using a scanning electron microscope to arbitrarily select five locations corresponding to the thickness of one conductive thin wire and calculate the arithmetic mean value of the thicknesses at the five locations.

[0110] The line resistance of the conductive thin wire is preferably less than 200 Ω / mm, more preferably less than 100 Ω / mm, and even more preferably less than 60 Ω / mm, from the viewpoint of operability when used as a touch panel. The linear resistance is the resistance measured by the four-probe method divided by the distance between the measurement probes. More specifically, after breaking both ends of any one conductive thin wire constituting the mesh pattern and separating it from the mesh pattern, four microprobes (A, B, C, D) (tungsten probes (diameter 0.5 μm) manufactured by Micro Support Co., Ltd.) are brought into contact with the separated conductive thin wire, and a constant current I is applied to the outermost probes A and D using a source meter (KEITHLEY Source Meter 2400 general-purpose source meter) so that the voltage V between the inner probes B and C becomes 5 mV. The resistance Ri = V / I is measured, and the linear resistance is calculated by dividing the obtained resistance Ri by the distance between B and C.

[0111] The thin conductive wires may form a predetermined pattern, that is, the conductive substrate may have a pattern formed by the thin conductive wires. The shape of the pattern formed by the conductive thin wires is not particularly limited, and is preferably, for example, a triangle such as an equilateral triangle, an isosceles triangle, or a right-angled triangle; a quadrangle such as a square, a rectangle, a rhombus, a parallelogram, or a trapezoid; a (regular) n-gon such as a (regular) hexagon or a (regular) octagon; a circle; an ellipse; a star; or a geometric figure combining these figures, and more preferably a mesh shape (mesh pattern). The conductive substrate preferably has a mesh pattern formed by conductive thin wires.

[0112] FIG. 2 is a plan view showing an example of a mesh pattern formed by conductive thin wires of a conductive substrate according to the present invention. The mesh shape refers to a shape including a plurality of non-thin wire portions (lattices) 6, each of which is formed by intersecting thin conductive wires 4 and is spaced apart from one another, as shown in FIG. 2. In FIG. 2, the non-thin wire portions 6 are square with a side length of L. However, the non-thin wire portions of the mesh pattern may have other shapes, such as polygonal shapes (e.g., triangles, quadrilaterals (diamonds, rectangles, etc.), hexagons, and random polygons). The shape of the sides may be curved shapes other than straight lines, or may be arc-shaped. When the sides are arc-shaped, for example, two opposing sides may be arc-shaped outwardly convex, and the other two opposing sides may be arc-shaped inwardly convex. Each side may also be wavy, with an outwardly convex arc and an inwardly convex arc continuing in series. Of course, each side may also be a sine curve.

[0113] The length L of one side of the non-thin line portion 6 is not particularly limited, but is preferably 1500 μm or less, more preferably 1300 μm or less, and even more preferably 1000 μm or less. The lower limit of the length L is not particularly limited, but is preferably 5 μm or more, more preferably 30 μm or more, and even more preferably 80 μm or more. When the length of one side of the non-thin line portion is within the above-mentioned range, it is possible to maintain good transparency, and when the conductive substrate is attached to the front of a display device, the display can be viewed without any sense of incongruity.

[0114] In terms of visible light transmittance, the opening ratio of the mesh pattern formed by the conductive thin wires is preferably 90% or more, more preferably 95% or more, and even more preferably 99% or more. There is no particular upper limit, but it can be less than 100%. The aperture ratio means the ratio (area ratio) of the area where the mesh pattern is formed on the conductive substrate, excluding the area where the conductive thin wires are arranged, to the entire area occupied by the mesh pattern.

[0115] [Transparent insulation part] The conductive substrate may further include a transparent insulating portion adjacent to the thin conductive wires on the base material. As shown in Figure 1, the thin conductive wires and the transparent insulating portion are arranged side by side in the in-plane direction on the surface of the base material. The transparent insulating portion is a region that does not contain conductive metal and does not exhibit conductivity. Here, the transparent insulating portion "does not contain metal" means that the metal content in the transparent insulating portion is 0.1 mass% or less relative to the total mass of the transparent insulating portion. The metal content in the transparent insulating portion is preferably 0.05 mass% or less relative to the total mass of the transparent insulating portion. In addition, in this specification, "transparent" means that the average transmittance of visible light with a wavelength of 400 to 700 nm is 80% or more. The average transmittance of the transparent insulating portion for visible light is preferably 90% or more. There is no particular upper limit, and it is, for example, 99% or less. The transmittance can be measured using a spectrophotometer.

[0116] The transparent insulating portion preferably contains a polymer compound as a main component. Examples of the polymer compound contained in the transparent insulating part include the polymer compound contained in the conductive thin wire, and the specific polymer is preferred. In particular, it is more preferred to contain the same polymer compound as the polymer compound (preferably the specific polymer) contained in the conductive thin wire. The transparent insulating part "contains a polymer compound as a main component" means that the content of the polymer compound is 50% by mass or more relative to the total mass of the transparent insulating part. The content of the polymer compound in the transparent insulating part is preferably 90% by mass or more, and more preferably 95% by mass or more. There is no particular upper limit, and it may be 100% by mass. The transparent insulating portion may contain components other than the polymer compound, such as specific compounds.

[0117] The method for forming the transparent insulating portion is not particularly limited, and for example, in the method for producing a conductive substrate described later, a silver halide-containing photosensitive layer is exposed to light in a pattern to form unexposed portions, and then the unexposed portions are developed to form a transparent insulating portion mainly composed of a polymer compound. Furthermore, a process for removing gelatin is carried out as necessary to form a transparent insulating portion mainly composed of a specific polymer.

[0118] [Other components] The conductive substrate may have other members in addition to the above-mentioned base material, conductive thin wires, and transparent insulating portion. Other members that the conductive substrate may have include a conductive portion having a structure different from that of the conductive thin wires, which will be described later.

[0119] [Method for manufacturing conductive substrate] Next, a method for producing the conductive substrate will be described. The method for producing the conductive substrate is not particularly limited as long as it can produce a conductive substrate having the above-mentioned configuration, and any known method can be used. Examples include a method of performing exposure and development using silver halide, a method of forming a metal-containing layer on the entire surface of a support and then removing part of the metal-containing layer using a resist pattern to form a thin line-shaped metal-containing layer, and a method of ejecting a composition containing a metal and a resin onto a substrate by a known printing method such as inkjet printing to form a thin line-shaped metal-containing layer. Among these, a method of exposure and development using silver halide is preferred in terms of superior productivity and conductivity of the conductive thin wires. Specifically, a method of manufacturing a conductive substrate having the steps A to D described below in this order can be mentioned. Hereinafter, a method for producing a conductive substrate including steps A to D will be described in detail, but the method for producing a conductive substrate according to the present invention is not limited to the following method.

[0120] <Process A> Step A is a step of forming a silver halide-containing photosensitive layer (hereinafter also referred to as "photosensitive layer") containing silver halide, gelatin, and a specific polymer (a polymer compound different from gelatin) on a substrate. This step produces a substrate with a photosensitive layer that is subjected to an exposure treatment described below. First, the materials and components used in process A will be described in detail, and then the procedure for process A will be described in detail. The substrate and the specific polymer used in step A are as described above.

[0121] (silver halide) The halogen atom contained in the silver halide may be any of chlorine atom, bromine atom, iodine atom, and fluorine atom, or a combination thereof.For example, silver halide mainly composed of silver chloride, silver bromide, or silver iodide is preferred, and silver halide mainly composed of silver chloride or silver bromide is more preferred.In addition, silver chlorobromide, silver iodochlorobromide, or silver iodobromide is also preferably used. Here, for example, "silver halide mainly composed of silver chloride" refers to a silver halide in which the molar fraction of chloride ions in the total halide ions in the silver halide composition is 50% or more. This silver halide mainly composed of silver chloride may contain bromide ions and / or iodide ions in addition to chloride ions. Alternatively, the silver halide may contain a metal compound other than silver, and the compounds described in paragraphs 0031 to 0038 of JP-A No. 2006-332459 can be preferably used. Alternatively, the silver halide is preferably subjected to chemical sensitization treatment using a chemical sensitizer exemplified in paragraphs 0039 to 0045 of JP-A No. 2006-332459. By using these metal compounds and chemical sensitizers to control the properties of the silver halide-containing photosensitive layer, such as its sensitivity to light and gradation, it is possible to increase the silver density of the conductive fine wires formed by developing the photosensitive layer, thereby further improving the conductivity.

[0122] The silver halide is usually in the form of solid particles, and the average particle size of the silver halide is preferably from 10 to 1000 nm, more preferably from 10 to 300 nm, in terms of equivalent spherical diameter. By reducing the silver halide particle size, it is possible to reduce light scattering by the silver halide particles when the silver halide photosensitive layer is exposed to light in the step B described below, and therefore it is preferable to be able to suppress an increase in the line width of the conductive thin wires due to light scattering. On the other hand, if the silver halide particle size is too small, the surface area of the developed silver formed in step B increases, which may increase the amount of surface adsorbates that cause a decrease in conductivity, so the average particle size of the silver halide particles is preferably in the range described above. The equivalent sphere diameter is the diameter of a spherical particle having the same volume. The "equivalent sphere diameter" used as the average particle diameter of the silver halide mentioned above is an average value, which is obtained by measuring the equivalent sphere diameters of 100 silver halide particles and calculating the arithmetic mean thereof.

[0123] The shape of the silver halide grains is not particularly limited, and examples thereof include spherical, cubic, tabular (hexagonal tabular, triangular tabular, quadrangular tabular, etc.), octahedral, and tetradecahedral shapes.

[0124] (gelatin) The type of gelatin is not particularly limited, and examples thereof include lime-processed gelatin and acid-processed gelatin. In addition, gelatin hydrolysates, enzymatic decomposition products, and gelatin modified with amino groups and / or carboxy groups (phthalated gelatin and acetylated gelatin) may also be used.

[0125] The photosensitive layer contains the above-mentioned specific polymer, which further improves the strength of the conductive thin wires and transparent insulating portion formed from the photosensitive layer.

[0126] (Step A procedure) The method for forming the photosensitive layer containing the above-mentioned components in step A is not particularly limited, but from the viewpoint of productivity, a method in which a photosensitive layer-forming composition containing silver halide, gelatin, and a specific polymer is brought into contact with a substrate to form a photosensitive layer on the substrate is preferred. The form of the photosensitive layer-forming composition used in this method will be described in detail below, and then the steps will be described in detail.

[0127] (Materials contained in the composition for forming the photosensitive layer) The composition for forming a photosensitive layer contains the above-mentioned silver halide, gelatin, and specific polymer. If necessary, the specific polymer may be contained in the composition for forming a photosensitive layer in the form of particles. The photosensitive layer-forming composition may contain a solvent, if necessary. Examples of the solvent include water, organic solvents (for example, alcohols, ketones, amides, sulfoxides, esters, and ethers), ionic liquids, and mixed solvents thereof.

[0128] The method for contacting the photosensitive layer-forming composition with the substrate is not particularly limited, and examples thereof include a method of applying the photosensitive layer-forming composition onto the substrate and a method of immersing the substrate in the photosensitive layer-forming composition. After the above treatment, a drying treatment may be carried out as necessary.

[0129] (Silver halide-containing photosensitive layer) The photosensitive layer formed by the above-described procedure contains silver halide, gelatin, and a specific polymer. The content of silver halide in the photosensitive layer is not particularly limited, but is preferably 3.0 to 20.0 g / m in terms of silver, since this provides a conductive substrate with better conductivity. 2 is preferred, and 5.0 to 15.0 g / m 2 The term "silver equivalent" means that the silver halide is converted into the mass of silver produced by reduction of all the silver halide. The content of the specific polymer in the photosensitive layer is not particularly limited, and is preferably 0.04 to 2.0 g / m in order to provide a conductive substrate with better conductivity. 2 is preferable, and 0.08 to 0.40 g / m 2 More preferably, 0.10 to 0.40 g / m 2 is more preferred.

[0130] Although a single silver halide photosensitive layer may be used, it is also preferable to laminate multiple photosensitive layers as needed. When multiple silver halide photosensitive layers are laminated, it is preferable to design the layer farther from the light source (hereinafter referred to as the "lower layer") to be more sensitive than the layer closer to the light source (hereinafter referred to as the "upper layer") when exposing the photosensitive layer. Because the intensity of light reaching the lower layer is reduced due to absorption and scattering by the silver halide in the upper layer, increasing the sensitivity of the lower layer allows the lower photosensitive layer to be photosensitive even with light of reduced intensity, which is preferable, thereby increasing the amount of silver per given line width of the conductive thin wire. It is also preferable to design the silver halide particles in the upper layer to be smaller in size than the silver halide particles in the lower layer. The problem of light scattering by the silver halide particles in the upper layer expanding the irradiated area of light reaching the lower layer and resulting in a thicker line width of the conductive thin wire can be prevented by reducing the particle size of the silver halide particles in the upper layer, which is preferable. Furthermore, by increasing the particle size of the silver halide grains in the lower layer, the surface area of developed silver can be reduced compared to when the particle size of the silver halide grains in the lower layer is reduced, which is preferable because it can reduce surface adsorption substances that inhibit conductivity. Although the preferred sensitivity ratio between the upper and lower silver halide photosensitive layers cannot be generally determined because light absorption and scattering characteristics vary depending on factors such as the silver halide grain size, halogen composition, thickness of the photosensitive layer, and wavelength of the light source used for exposure, the sensitivity of the lower layer relative to the sensitivity of the upper layer is preferably in the range of 1.1 to 10 times, and more preferably 1.5 to 4 times. Alternatively, the average silver halide grain size is preferably in the range of 40 to 180 nm for the upper layer and 100 to 300 nm for the lower layer.

[0131] <Process B> In step B, the photosensitive layer is exposed to light and then developed to form a fine line-shaped silver-containing layer containing metallic silver, gelatin, and a specific polymer.

[0132] By exposing the photosensitive layer to light, a latent image is formed in the exposed areas. The exposure may be carried out in a pattern. For example, to obtain a mesh pattern consisting of conductive thin wires, examples include a method of exposing through a mask having a mesh-shaped opening pattern, and a method of exposing in a mesh pattern by scanning with laser light. There are no particular restrictions on the type of light used for exposure, as long as it can form a latent image on the silver halide, and examples thereof include visible light, ultraviolet light, and X-rays.

[0133] By subjecting the exposed photosensitive layer to a development process, metallic silver is precipitated in the exposed areas (areas where a latent image is formed). The method of development is not particularly limited, and examples thereof include known methods used for silver halide photographic films, photographic paper, films for printing plate making, and emulsion masks for photomasks. The development process usually uses a developer, and the type of developer is not particularly limited, but examples include PQ (phenidone hydroquinone) developer, MQ (Metol hydroquinone) developer, and MAA (Metol ascorbic acid) developer.

[0134] This step may further include a fixing treatment for the purpose of removing and stabilizing the silver halide in the unexposed areas. Fixing treatment is carried out simultaneously with and / or after development. The method of fixing treatment is not particularly limited, and examples thereof include methods used for silver halide photographic film, photographic paper, film for printing plate making, and emulsion masks for photomasks. In the fixing process, a fixing solution is usually used. The type of fixing solution is not particularly limited, and examples thereof include the fixing solutions described on page 321 of "Chemistry of Photography" (by Sasai, published by Shashin Kogyo Shuppansha Co., Ltd.).

[0135] By carrying out the above-mentioned treatment, a thin line-shaped silver-containing layer containing metallic silver, gelatin, and the specific polymer is formed, and an insulating layer containing no metallic silver but gelatin and the specific polymer is formed. The width of the silver-containing layer can be adjusted, for example, by adjusting the opening width of the mask used during exposure. For example, the exposure area can be adjusted by setting the opening width of the mask to 1.0 μm or more and less than 5.0 μm. Furthermore, when a mask is used during exposure, the width of the silver-containing layer formed can be adjusted by adjusting the exposure dose. For example, when the opening width of the mask is narrower than the target width of the silver-containing layer, the width of the region where the latent image is formed can be adjusted by increasing the exposure dose more than usual. That is, the line width of the conductive thin wire can be adjusted by adjusting the exposure dose. Furthermore, when a laser beam is used, the exposure area can be adjusted by adjusting the focusing range and / or scanning range of the laser beam.

[0136] The width of the silver-containing layer is preferably 1.0 μm or more and less than 5.0 μm, and more preferably 2.0 μm or less, since the formed conductive thin wires are difficult to visually recognize. The silver-containing layer obtained by the above procedure is in the form of thin lines, and the width of the silver-containing layer means the length (width) of the silver-containing layer in a direction perpendicular to the direction in which the thin lines of the silver-containing layer extend.

[0137] <Process C> Step C is a step of subjecting the silver-containing layer and insulating layer (hereinafter, both of which are also referred to as the "silver-containing layer, etc.") obtained in Step B to a heat treatment. By carrying out this step, fusion between specific polymers in the silver-containing layer, etc. progresses, and the strength of the silver-containing layer, etc. is improved.

[0138] The method of heat treatment is not particularly limited, and examples thereof include a method of bringing the silver-containing layer or the like into contact with superheated steam and a method of heating with a temperature control device (e.g., a heater), and the method of bringing the silver-containing layer or the like into contact with superheated steam is preferred.

[0139] The superheated steam may be superheated steam or a mixture of superheated steam and other gases. The contact time between the superheated vapor and the silver-containing layer etc. is not particularly limited, but is preferably 10 to 70 seconds. The supply rate of superheated steam is 500 to 600 g / m3 The temperature of the superheated steam is preferably 100 to 160°C (more preferably 100 to 120°C) at 1 atmospheric pressure.

[0140] The heating conditions for the method of heating the silver-containing layer etc. with a temperature regulator are preferably 100 to 200° C. (preferably 100 to 150° C.) for 1 to 240 minutes (preferably 60 to 150 minutes).

[0141] <Process D> Step D is a step of removing gelatin from the silver-containing layer etc. obtained in step C. By carrying out this step, gelatin is removed from the silver-containing layer etc., and spaces are formed inside the silver-containing layer etc.

[0142] The method for removing gelatin is not particularly limited, and examples thereof include a method using a protease (hereinafter also referred to as "Method 1") and a method for decomposing and removing gelatin using an oxidizing agent (hereinafter also referred to as "Method 2").

[0143] The proteolytic enzyme used in Method 1 includes known plant or animal enzymes that can hydrolyze proteins such as gelatin. Examples of proteolytic enzymes include pepsin, rennin, trypsin, chymotrypsin, cathepsin, papain, ficin, thrombin, renin, collagenase, bromelain, and bacterial proteases, with trypsin, papain, ficin, and bacterial proteases being preferred. The procedure in Method 1 may be any method that brings the silver-containing layer or the like into contact with the above-mentioned protease, such as a method of bringing the silver-containing layer or the like into contact with a treatment liquid containing a protease (hereinafter also referred to as "enzyme liquid"). Examples of contacting methods include a method of immersing the silver-containing layer or the like in the enzyme liquid, and a method of applying the enzyme liquid onto the silver-containing layer or the like. The content of the protease in the enzyme solution is not particularly limited, and is preferably 0.05 to 20% by mass, more preferably 0.5 to 10% by mass, relative to the total amount of the enzyme solution, in that the degree of decomposition and removal of gelatin can be easily controlled. The enzyme solution often contains water in addition to the above-mentioned proteolytic enzymes. The enzyme solution may contain other additives (for example, a pH buffer, an antibacterial compound, a humectant, and a preservative) as needed. The pH of the enzyme solution is selected so as to maximize the activity of the enzyme, and is preferably 5 to 9. The temperature of the enzyme solution is preferably a temperature at which the activity of the enzyme is enhanced, specifically 20 to 45°C.

[0144] If necessary, after the treatment with the enzyme solution, a washing treatment may be carried out in which the obtained silver-containing layer or the like is washed with warm water. The washing method is not particularly limited, and a method of bringing the silver-containing layer or the like into contact with warm water is preferred. Examples include a method of immersing the silver-containing layer or the like in warm water and a method of applying warm water onto the silver-containing layer or the like. The optimum temperature of the hot water is selected depending on the type of protease used, and from the viewpoint of productivity, a temperature of 20 to 80°C is preferred, and 40 to 60°C is more preferred. The contact time (washing time) between the hot water and the silver-containing layer or the like is not particularly limited, and from the viewpoint of productivity, it is preferably from 1 to 600 seconds, more preferably from 30 to 360 seconds.

[0145] The oxidizing agent used in Method 2 may be any oxidizing agent that can decompose gelatin, and is preferably an oxidizing agent with a standard electrode potential of +1.5 V or higher. The standard electrode potential here refers to the standard electrode potential (25°C, E0) of the oxidizing agent in an aqueous solution relative to a standard hydrogen electrode. Examples of the oxidizing agent include persulfuric acid, percarbonic acid, perphosphoric acid, hypoperchloric acid, peracetic acid, metachloroperbenzoic acid, hydrogen peroxide, perchloric acid, periodic acid, potassium permanganate, ammonium persulfate, ozone, hypochlorous acid or a salt thereof, and the like. From the viewpoints of productivity and economy, however, hydrogen peroxide (standard electrode potential: 1.76 V), hypochlorous acid or a salt thereof is preferred, and sodium hypochlorite is more preferred.

[0146] The procedure in Method 2 may be any method that brings the silver-containing layer, etc., into contact with the above-mentioned oxidizing agent, such as a method of bringing the silver-containing layer, etc., into contact with a treatment liquid containing an oxidizing agent (hereinafter also referred to as "oxidizing agent liquid"). Examples of the contact method include a method of immersing the silver-containing layer, etc., in the oxidizing agent liquid and a method of applying the oxidizing agent liquid onto the silver-containing layer, etc. The type of solvent contained in the oxidizing agent liquid is not particularly limited, and examples thereof include water and organic solvents.

[0147] <Process E> The method for producing a conductive substrate may include step E of plating the silver-containing layer obtained in step D. By carrying out this step, the internal space of the silver-containing layer formed by removing the gelatin is filled with a metal (plating metal), thereby improving the conductivity of the conductive thin wires.

[0148] The type of plating treatment is not particularly limited, but examples include electroless plating (chemical reduction plating or displacement plating) and electrolytic plating, with electroless plating being preferred. As the electroless plating, a known electroless plating technique is used. Examples of plating treatments include silver plating treatment, copper plating treatment, nickel plating treatment, and cobalt plating treatment. Silver plating treatment or copper plating treatment is preferred, with silver plating treatment being more preferred, as they provide better conductivity to the conductive thin wires.

[0149] The components contained in the plating solution used in the plating process are not particularly limited, but typically contain, in addition to a solvent (e.g., water), 1. metal ions for plating, 2. a reducing agent, 3. an additive (stabilizer) that improves the stability of the metal ions, and 4. a pH adjuster. In addition to these, this plating bath may also contain known additives such as a plating bath stabilizer. The type of metal ions contained in the plating solution can be appropriately selected depending on the type of metal to be deposited, and examples include silver ions, copper ions, nickel ions, and cobalt ions.

[0150] The procedure for the above-mentioned plating treatment is not particularly limited, and any method can be used as long as it brings the silver-containing layer into contact with a plating solution. Examples of the method include a method of immersing the silver-containing layer in a plating solution and a method of applying a plating solution to the silver-containing layer. The contact time between the silver-containing layer and the plating solution is not particularly limited, but is preferably 20 seconds to 30 minutes from the viewpoint of superior conductivity of the conductive thin wire and productivity.

[0151] <Process F> The method for producing a conductive substrate may further include a step F of subjecting the silver-containing layer obtained in the above step to a smoothing treatment.

[0152] The method of the smoothing treatment is not particularly limited, and for example, a calendering treatment step in which a substrate having a silver-containing layer or the like is passed between at least a pair of rolls under pressure is preferred. Hereinafter, the smoothing treatment using calender rolls will be referred to as calendering treatment. The rolls used for the calendering treatment include plastic rolls and metal rolls, with plastic rolls being preferred from the viewpoint of preventing wrinkles. The pressure between the rolls is not particularly limited, but is preferably 2 MPa or more, more preferably 4 MPa or more, and is preferably 120 MPa or less. The pressure between the rolls can be measured using a Prescale (for high pressure) manufactured by Fujifilm Corporation. The temperature for the smoothing treatment is not particularly limited, but is preferably 10 to 100°C, and more preferably 10 to 50°C.

[0153] <Process G> The method for producing a conductive substrate may include a step G of subjecting the silver-containing layer obtained in the above step to a heat treatment. By carrying out this step, a conductive thin wire having superior conductivity can be obtained. The method for subjecting the conductive thin wires to heat treatment is not particularly limited, and the methods described in step C can be used.

[0154] <Process H> The method for producing a conductive substrate may include, before step A, step H of forming a silver halide-free layer containing gelatin and a specific polymer on the substrate. By carrying out this step, a silver halide-free layer is formed between the substrate and the silver halide-containing photosensitive layer. This silver halide-free layer plays the role of a so-called antihalation layer and contributes to improving adhesion between the conductive thin wires and the substrate. The silver halide-free layer contains the above-mentioned gelatin and specific polymer, while the silver halide-free layer does not contain any silver halide. The ratio of the mass of the specific polymer to the mass of gelatin in the silver halide-free layer (mass of specific polymer / mass of gelatin) is not particularly limited, but is preferably 0.1 to 5.0, more preferably 1.0 to 3.0. The content of the specific polymer in the silver halide-free layer is not particularly limited, and is not more than 0.03 g / m 2 In most cases, the adhesiveness of the conductive thin wire is better, so 1.0 g / m 2 The upper limit is not particularly limited, but is preferably 1.63 g / m 2 The following cases are common:

[0155] The method for forming the silver halide-free layer is not particularly limited, and examples thereof include a method in which a layer-forming composition containing gelatin and a specific polymer is applied to a substrate, and if necessary, a heat treatment is carried out. The layer-forming composition may contain a solvent, if necessary. Examples of the solvent include the solvents used in the photosensitive layer-forming composition described above. The thickness of the silver halide-free layer is not particularly limited, and is often 0.05 μm or more. In terms of better adhesion of the conductive thin wires, it is preferably more than 1.0 μm, and more preferably 1.5 μm or more. The upper limit is not particularly limited, but it is preferably less than 3.0 μm.

[0156] <Process I> The method for producing a conductive substrate may include step I of forming a protective layer containing gelatin and a specific polymer on the silver halide-containing photosensitive layer after step A and before step B. By providing the protective layer, it is possible to improve the scratch resistance and mechanical properties of the photosensitive layer. The ratio of the mass of the specific polymer to the mass of gelatin in the protective layer (mass of specific polymer / mass of gelatin) is not particularly limited, but is preferably more than 0 and not more than 2.0, more preferably more than 0 and not more than 1.0. The content of the specific polymer in the protective layer is not particularly limited, and is not more than 0 g / m 2 Super 0.3g / m 2 Preferably, 0.005 to 0.1 g / m or less 2 is more preferred.

[0157] The method for forming the protective layer is not particularly limited, and examples thereof include a method in which a protective layer-forming composition containing gelatin and a specific polymer is applied onto a silver halide-containing photosensitive layer, and if necessary, a heat treatment is carried out. The composition for forming a protective layer may contain a solvent, if necessary. Examples of the solvent include the solvents used in the composition for forming a photosensitive layer described above. The thickness of the protective layer is not particularly limited, but is preferably 0.03 to 0.3 μm, and more preferably 0.075 to 0.20 μm.

[0158] The above-mentioned steps H, A and I may be carried out simultaneously by simultaneous multilayer coating.

[0159] The conductive substrate may contain additives, as needed, such as film-forming aids, matting agents, slipping agents, antifoaming agents, foam inhibitors, dyes, fluorescent brightening agents, preservatives, antifungal agents, pH adjusters, viscosity adjusters, dispersion stabilizers, rust inhibitors, antioxidants, oxidizing agents, reducing agents, radical scavengers, light stabilizers such as hindered amine compounds, water softeners, crosslinking agents, antistatic agents, ultraviolet absorbers, fluorescent brightening agents, leveling agents, refractive index adjusters, inorganic or organic fine particles, and surfactants.

[0160] Known surfactants can be used for the purpose of adjusting the surface tension, leveling properties, defoaming properties, foam suppression properties, and dispersibility of contained materials of each layer during the production of the conductive substrate, or for the purpose of adjusting the electrostatic charge, triboelectric series, adhesion resistance, slip properties, wettability, and water content of the conductive substrate. Examples of surfactants include ionic surfactants (anionic surfactants, cationic surfactants, amphoteric surfactants) and nonionic surfactants (nonionic surfactants, silicone-based surfactants, fluorine-based surfactants), which can be used alone or in combination.

[0161] Examples of anionic surfactants include alkylbenzenesulfonates such as dodecylbenzenesulfonic acid, aromatic sulfonic acid surfactants such as dodecylphenyl ether sulfonate, monosoap anionic surfactants, ether sulfate surfactants, phosphate surfactants, and carboxylic acid surfactants. Examples of cationic surfactants include alkylamine salts, quaternary ammonium salts, etc. Examples of amphoteric surfactants include alkylbetaine surfactants, amine oxide surfactants, etc. Examples of nonionic surfactants include sugar ester surfactants such as sorbitan fatty acid esters and polyoxyethylene sorbitan fatty acid esters, fatty acid ester surfactants such as polyoxyethylene resin acid esters and polyoxyethylene fatty acid diethyl esters, and ether surfactants such as polyoxyethylene alkyl ethers, polyoxyethylene alkylphenyl ethers, and polyoxyethylene polypropylene glycols.

[0162] The silicone surfactant refers to a surfactant having a polysiloxane structure, and may have a functional group such as a hydrophilic group, a hydrophilic polymer chain, etc., at a side chain, terminal, etc., such as a polyether-modified group, a polyether-alkyl co-modified group, a polyglycerin-modified group, or a polyglycerin-alkyl co-modified group. More specifically, it is preferable to include a silicone surfactant represented by the following formula (1):

[0163] [ka]

[0164] In formula (1), m is an integer of 1 or more and 200 or less, preferably an integer of 2 or more and 100 or less, and more preferably an integer of 5 or more and 50 or less, and n is an integer of 1 or more and 100 or less, preferably an integer of 2 or more and 80 or less, and more preferably an integer of 4 or more and 50 or less. In formula (1), a is an integer of 0 or more and 40 or less, preferably an integer of 35 or less, more preferably an integer of 25 or less, and even more preferably an integer of 15 or less, and b is an integer of 0 or more and 40 or less, preferably an integer of 2 or more and 35 or less, more preferably an integer of 4 or more and 25 or less, and even more preferably an integer of 6 or more and 20 or less. (a+b) is preferably 1 or more and 50 or less, more preferably 2 or more and 40 or less, and even more preferably 5 or more and 30 or less. Each of the structural units m, n, a and b may be a block copolymer or a random copolymer.

[0165] From the viewpoint of drying property of the coating composition, the ratio of m to n (m / n) is preferably 1.5 or more and 20 or less, more preferably 1.8 or more and 15 or less, and even more preferably 2.0 or more and 10 or less. The ratio (m / n) can be determined by proton nuclear magnetic resonance ( 1 It is calculated from the ratio of modified and unmodified Si elements by H-NMR spectroscopy. From the viewpoint of improving the wetting and spreading properties of the coating composition, the ratio [(a+b) / (m / n)] is preferably 1.6 or more and 6.3 or less, more preferably 1.7 or more and 5.5 or less, and even more preferably 1.8 or more and 5.0 or less.

[0166] R in formula (1) represents a hydrogen atom or an alkyl group, preferably a hydrogen atom or an alkyl group having 1 to 15 carbon atoms, more preferably a hydrogen atom or an alkyl group having 1 to 8 carbon atoms, even more preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and still more preferably a methyl group.

[0167] Examples of polyether-modified silicone surfactants represented by formula (1) include PEG-3 dimethicone, PEG-9 dimethicone, PEG-9PEG-9 dimethicone, PEG-9 methyl ether dimethicone, PEG-10 dimethicone, PEG-11 methyl ether dimethicone, PEG / PPG-20 / 22 butyl ether dimethicone, PEG-32 methyl ether dimethicone, PEG-9 polydimethylsiloxyethyl dimethicone, lauryl PEG-9 polydimethylsiloxyethyl dimethicone, dimethicone / (PEG-10 / 15) crosspolymer, and (PEG-15 / lauryl polydimethylsiloxyethyl dimethicone) crosspolymer.

[0168] Commercially available silicone surfactants include, for example, BYK-302, BYK-306, BYK-307, BYK-326, BYK-333, BYK-341, BYK-345, BYK-346, BYK-347, BYK-348, BYK-379, BYK-3451, BYK-3565, and BYK-UV3530 (all trade names, manufactured by BYK-Chemie Japan Co., Ltd.), KF-351A, KF-352A, KF-353, KF-354L, KF-355A, KF-615A, KF-618, KF-642, KF-643, KF-945, KF-640, and KF- 642, KF-643, KF-6020, X-22-4515, KF-6011, KF-6012, KF-6013, KF-6015, KF-6017, KF-6028, KF-6038, KF-6043, KP-101, KP-104, KP-105, KP-106, KP-109, KP-110, KP-112, KP-118, KP-120, KP-121, KP-124, KP-125, KP-341 (all trade names, manufactured by Shin-Etsu Chemical Co., Ltd.), SAG503A, SAG014 (all trade names, manufactured by Nissin Chemical Industry Co., Ltd.), TEGO WET240, TEGO Examples of such silicone rubbers include WET270 (trade names, manufactured by Evonik), EMALEX-SS-5602, SS-1906EX (trade names, manufactured by Nippon Emulsion Co., Ltd.), FZ-2105, FZ-2118, FZ-2154, FZ-2161, FZ-2162, FZ-2163, FZ-2164 (trade names, manufactured by Dow Corning Toray Silicone Co., Ltd.), BYK-33, BYK-387 (trade names, manufactured by BYK-Chemie Co., Ltd.), TSF4440, TSF4452, TSF4453 (trade names, manufactured by Toshiba Silicone Co., Ltd.), and the like.

[0169] Examples of fluorine-based surfactants include surfactants having a fluoro-alkyl group, alkenyl group, or aryl group having 4 or more carbon atoms, and having an anionic group (sulfonic acid (salt), sulfuric acid (salt), carboxylic acid (salt), phosphoric acid (salt)), a cationic group (amine salt, ammonium salt, aromatic amine salt, sulfonium salt, phosphonium salt), a hetaine group (carboxyamine salt, carboxyammonium salt, sulfoamine salt, sulfoammonium salt, phosphoammonium salt), or a nonionic group (substituted or unsubstituted polyoxyalkylene group, polyglyceryl group, or sorbitan residue) as an ionic group.

[0170] <Process P> The method for producing a conductive substrate includes a step P of bringing a specific compound into contact with the conductive thin wires formed on the base material to produce conductive thin wires containing the specific compound. The method for contacting the conductive thin wire with the specific compound is not particularly limited, and examples thereof include a method of immersing a substrate on which the conductive thin wire has been formed in a treatment liquid containing the specific compound, and a method of applying a treatment liquid containing the specific compound to the surface of a substrate on which the conductive thin wire has been formed. It is presumed that the corrosion resistance of the conductive thin wire is improved by carrying out step P and allowing the specific compound to be contained in the conductive thin wire through penetration, adsorption, etc.

[0171] The treatment liquid containing the specific compound is preferably a solution obtained by dissolving the specific compound in a solvent. The type of solvent used is not particularly limited, and examples thereof include the solvents used in the photosensitive layer-forming composition described above. Preferred solvents include alcohols and ethers. Specific examples of preferred solvents include ethanol, 1-propanol, 2-propanol, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monopropyl ether, and diethylene glycol monobutyl ether. The content of the specific compound in the treatment liquid may be determined appropriately depending on the amount of the specific compound to be contained in the target conductive thin wire and the treatment conditions, but is preferably 0.01 to 2 mass %, more preferably 0.05 to 1 mass %, relative to the total mass of the treatment liquid. The temperature of the treatment liquid when it is brought into contact with the conductive thin wire is, for example, 25 to 60°C. The contact time between the specific compound and the conductive thin wire is not particularly limited, but is preferably 0.1 to 10 minutes, more preferably 0.2 to 3 minutes.

[0172] [Uses of conductive substrates] The conductive substrate obtained as described above can be used in a variety of applications, including touch panels (or touch sensor films), semiconductor chips, various electric wiring boards, FPCs (Flexible Printed Circuits), COFs (Chip on Film), TABs (Tape Automated Bonding), antennas, multilayer wiring boards, and motherboards. In particular, the conductive substrate according to the present invention is preferably used for touch panels (capacitive touch panels). In a touch panel having a conductive substrate, the conductive thin wires can effectively function as detection electrodes. When the conductive substrate is used in a touch panel, examples of the display panel that can be used in combination with the conductive substrate include a liquid crystal panel and an OLED (organic light emitting diode) panel, and a combination with an OLED panel is preferred.

[0173] In addition to the thin conductive wires, the conductive substrate may have a conductive part having a different configuration from the thin conductive wires. This conductive part may be electrically connected to the thin conductive wires to provide electrical continuity. Examples of the conductive part include peripheral wiring that applies a voltage to the thin conductive wires, and alignment marks that adjust the position of a member to be laminated on the conductive substrate.

[0174] 3 to 5 are plan views showing examples of the configuration of a touch sensor film to which the conductive substrate according to the present invention is applied. The touch sensor film 10 shown in FIG. 3 has a substrate 2, a first conductive layer 3A disposed on a first surface 2A of the substrate 2, and a second conductive layer 3B disposed on a second surface 2B of the substrate 2. As shown in FIG. 3, the substrate 2 has, on the first surface 2A, a plurality of first electrode regions Q1 that extend in a certain direction and are arranged in a direction perpendicular to that direction.

[0175] The first conductive layer 3A disposed on the first surface 2A of the substrate 2 includes a plurality of first detection electrodes 11 disposed in the plurality of first electrode regions Q1 and extending in the same direction as the first electrode regions Q1, a plurality of first lead-out wires 13 disposed around the plurality of first detection electrodes 11, and a plurality of first external connection terminals 14 electrically connected to the plurality of first lead-out wires 13. The first detection electrode 11 is connected to one end of the first lead-out wire 13, and the first external connection terminal 14 is connected to the other end. Each of the plurality of first external connection terminals 14 has an elongated shape extending in a fixed extension direction from one end connected to the first lead-out wire 13 to the other end. The plurality of first detection electrodes 11, the plurality of first lead-out wires 13, and the plurality of first external connection terminals 14 are made of the same composition. The plurality of first detection electrodes 11, the plurality of first lead-out wires 13, and the plurality of first external connection terminals 14 are formed simultaneously.

[0176] For the sake of explanation, the fixed direction in which the multiple first detection electrodes 11 extend is referred to as the X direction, the arrangement direction of the multiple first detection electrodes 11 perpendicular to the X direction is referred to as the Y direction, and the thickness direction of the multiple first detection electrodes 11 perpendicular to the X and Y directions is referred to as the Z direction. In the example of Fig. 3, the extension direction of the multiple first external connection terminals 14 is the X direction, which is the same as the extension direction of the multiple first detection electrodes 11.

[0177] FIG. 4 shows an enlarged view of an example of the configuration of the first lead wiring 13 and the first detection electrode 11 of the touch sensor film 10. As shown in FIG. One end of each of the multiple first lead-out wirings 13 is arranged near one end of the corresponding first detection electrode 11 in the X direction, and the other end is connected to a first external connection terminal 14. One end of the first lead-out wiring 13 arranged near the first detection electrode 11 has a wiring portion 15 that is arranged around the first detection electrode 11 and has one end connected to the first external connection terminal 14, and a terminal portion 16 that is connected to the other end of the wiring portion 15 and extends along the Y direction. The terminal portion 16 and the first detection electrode 11 are connected to each other in the X direction, as shown in Fig. 4. Furthermore, the first detection electrode 11 is made up of a plurality of thin metal wires MW formed in the first electrode region Q1, as shown in Fig. 4, and the plurality of thin metal wires MW form a diamond-shaped mesh pattern MP.

[0178] FIG. 5 shows an enlarged view of an example of the configuration of the first external connection terminal 14 and the second external connection terminal 24 of the touch sensor film 10. 5 are configured to include thin metal wires 30 that are thinner than the first outgoing wiring 13 and the second outgoing wiring 23 and form a mesh pattern, respectively, thereby reducing the area of the first external connection terminal 14 and the second external connection terminal 24 and improving spark resistance, and the particularly thin thin metal wires 30 improve connection reliability.

[0179] Other uses of the conductive substrate according to the present invention include, for example, an electromagnetic wave shield that blocks electromagnetic waves such as radio waves and microwaves (ultra-high frequency waves) generated from electronic devices such as personal computers and workstations, and prevents static electricity. Such an electromagnetic wave shield can be used not only in personal computers, but also in electronic devices such as video recording devices and electronic medical devices. The conductive substrate according to the present invention can also be used for a transparent heating element.

[0180] The conductive substrate according to the present invention may be used in the form of a laminate comprising the conductive substrate and other components such as an adhesive sheet and a release sheet during handling and transportation. The release sheet functions as a protective sheet to prevent scratches on the conductive substrate during transportation of the laminate. Examples of the adhesive sheet include sheets made of known adhesives used in optical systems, such as optical clear adhesives (OCA) and acrylic adhesives. The conductive substrate may also be handled in the form of a composite having, for example, a conductive substrate, an adhesive sheet, and a protective layer in this order.

[0181] The present invention is basically configured as described above. Although the conductive substrate of the present invention has been described in detail, the present invention is not limited to the above-described embodiment, and various improvements or modifications may be made without departing from the spirit and scope of the present invention. [Example]

[0182] The present invention will be explained in more detail below with reference to examples. Note that the materials, amounts used, ratios, treatment contents, and treatment procedures shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as being limited by the specific examples shown below.

[0183] [Specific compound] In the examples, the following compounds (1) to (10) were used as specific compounds.

[0184] [ka] [ka]

[0185] (Synthesis of Compound (2)) Compound (2) was synthesized according to the following procedure.

[0186] [ka]

[0187] A mixture of cyanuric chloride (74.7 g, 0.41 mol) and 2-butanone (400 ml) was ice-cooled, and 3-aminophenol (1.26 mol) was added in small portions. Then, an aqueous solution of sodium acetate trihydrate (110.2 g, 0.81 mol) dissolved in water (165 ml) was added to the mixture. The mixture was stirred at 80°C for 2 hours, cooled to room temperature, and an aqueous solution of sodium carbonate (103 g, 0.97 mol) dissolved in water (596 ml) was added dropwise to the mixture and stirred for 30 minutes. The mixture was allowed to stand, the aqueous layer was removed, and the organic layer was filtered through Celite, and 150 ml of ethanol was added. Water (1.91 L) was added dropwise to the resulting organic layer while stirring, and after stirring for 2 hours, the precipitated crystals were collected by filtration and dried to obtain compound (2).

[0188] (Synthesis of Compound (1)) Compound (1) was synthesized in the same manner as compound (2), except that 3-aminophenol was replaced with m-anisidine.

[0189] (Synthesis of compound (3)) Compound (3) was synthesized according to the following procedure.

[0190] [ka]

[0191] A mixture of cyanuric chloride (87.6 g, 0.475 mol) and 2-butanone (620 ml) was ice-cooled, and 3-aminophenol (0.95 mol) was added in small portions. Then, an aqueous solution of sodium acetate trihydrate (135.8 g, 0.998 mol) dissolved in water (193 ml) was added to the mixture. The mixture was stirred at 45°C for 2 hours, cooled to room temperature, and an aqueous solution of sodium carbonate (80.6 g, 0.76 mol) dissolved in water (700 ml) was added dropwise to the mixture and stirred for 30 minutes. The mixture was allowed to stand, the aqueous layer was removed, and the organic layer was filtered through Celite, and 210 ml of ethanol was added. Water (1.75 L) was added dropwise to the resulting organic layer while stirring, and after stirring for 2 hours, the precipitated crystals were collected by filtration and dried to obtain Intermediate 3. The diamine compound (0.175 mol) was added to a mixture of intermediate 3 (0.35 mol) and 2-butanone (410 ml). Water (170 ml) was added to the mixture, which was stirred at 80°C for 2 hours and then cooled to room temperature. An aqueous solution of sodium carbonate (29.8 g, 0.28 mol) dissolved in water (620 ml) was added dropwise to the mixture and stirred for 30 minutes. The mixture was allowed to stand, the aqueous layer was removed, and the organic layer was filtered through Celite. The resulting organic layer was evaporated using an evaporator and dissolved in 2-propanol (195 ml). The resulting solution was added dropwise to water (2.25 L), stirred for 2 hours, and the precipitated crystals were collected by filtration and dried to obtain compound (3).

[0192] (Synthesis of Compounds (4) and (5)) Compounds (4) and (5) were each synthesized in the same manner as in the synthesis of compound (3), except that the diamine compound reacted with intermediate 3 was changed to a diamine compound that would yield the target compound.

[0193] (Synthesis of compound (6)) Compound (6) was synthesized in the same manner as in the synthesis of compound (3), except that 3-aminophenol was changed to 3-aminobenzenesulfonamide and the diamine compound reacted with intermediate 3 was changed to a diamine compound that would yield the target compound.

[0194] (Synthesis of compound (7)) Compound (7) was synthesized according to the following procedure.

[0195] [ka]

[0196] Intermediate 3 was obtained according to the synthesis method of compound (3). The above triamine compound (0.117 mol) was added dropwise to a mixture of intermediate 3 (0.35 mol) and N,N-dimethylacetamide (410 ml). N-Ethyldiisopropylamine (0.42 mol) was added dropwise to the mixture, which was then stirred at 120°C for 2 hours and cooled to room temperature. Ethyl acetate (200 ml) / tetrahydrofuran (600 ml), 2N aqueous hydrochloric acid (200 ml), and 10% saline (200 ml) were added to the mixture to extract the target product. The resulting organic layer was washed sequentially with 1N aqueous hydrochloric acid, 5% aqueous sodium bicarbonate, and 5% saline. The organic layer was dried over magnesium sulfate and filtered through Celite. The solvent was removed from the resulting organic layer using an evaporator and dissolved in 2-propanol (195 ml). The resulting solution was added dropwise to water (2.25 L) and stirred for 2 hours. The precipitated crystals were then filtered and dried to obtain compound (7).

[0197] (Synthesis of compound (8)) Compound (8) was synthesized in the same manner as in the synthesis of compound (7), except that 3-aminophenol was replaced with 3-aminobenzenesulfonamide.

[0198] (Synthesis of compound (9)) Compound (9) was synthesized according to the following scheme.

[0199] [ka]

[0200] A mixture of cyanuric chloride (87.6 g, 0.475 mol) and 2-butanone (620 ml) was cooled on ice, and 3-aminophenol (0.475 mol) was added in small portions. Then, an aqueous solution of sodium acetate trihydrate (0.523 mol) dissolved in water (193 ml) was added dropwise to the mixture. After stirring the mixture at room temperature for 2 hours, an aqueous solution of sodium carbonate (0.38 mol) dissolved in water (700 ml) was added dropwise and stirred for 30 minutes. The mixture was allowed to stand and the aqueous layer was removed, and the organic layer was filtered through Celite, and 210 ml of ethanol was added. Water (1.75 L) was added dropwise to the resulting organic layer while stirring, and after stirring for 2 hours, the precipitated crystals were collected by filtration and dried to obtain Intermediate 9. To a mixture of intermediate 9 (4.28 mmol), intermediate 3 (8.56 mmol), N,N-dimethylacetamide (25 ml), and 2-butanone (25 ml), bis(3-aminophenyl)sulfone (10.7 mmol) was added and stirred at 100°C for 2 hours, then cooled to room temperature. The mixture was added dropwise to water (300 ml), and the precipitated solid was collected by filtration. The resulting solid was dissolved in ethyl acetate (25 ml) / tetrahydrofuran (75 ml) and washed with 5% aqueous sodium bicarbonate and 5% brine, successively. The organic layer was dried over magnesium sulfate and then filtered through Celite. The resulting organic layer was evaporated using an evaporator and dissolved in 2-propanol (25 ml). The resulting solution was added dropwise to water (300 ml) and stirred for 2 hours. The precipitated crystals were collected by filtration and dried to obtain compound (9). The average r of compound (9) was 5.

[0201] (Method for synthesizing compound (10)) Compound (10) was synthesized in the same manner as compound (9), except that intermediate 9 (7.55 mmol) and intermediate 3 (7.55 mmol) were replaced with intermediate 9 (2.08 mmol), intermediate 3 (9.36 mmol), and bis(3-aminophenyl)sulfone (10.4 mmol). The average r of compound (10) was 10.

[0202] [Example 1] [Preparation of Silver Halide Emulsion A] To Solution 1 below, maintained at 38°C and pH 4.5, were added 90% of each of Solutions 2 and 3 below over a period of 20 minutes while stirring, forming 0.16 μm core particles. Solutions 4 and 5 below were then added to the resulting solution over a period of 8 minutes, and the remaining 10% of Solutions 2 and 3 below were added over a period of 2 minutes, growing the core particles to 0.21 μm. 0.15 g of potassium iodide was then added to the resulting solution, which was then aged for 5 minutes to complete particle formation.

[0203] 1 liquid: 750mL water 8.6g gelatin Sodium chloride 3g 1,3-dimethylimidazolidine-2-thione 20mg Sodium benzenethiosulfonate 10mg Citric acid 0.7g 2 liquid: 300mL water Silver nitrate 150g 3 liquid: 300mL water 38g sodium chloride 32g potassium bromide Potassium hexachloroiridate(III) (0.005%KCl 20% aqueous solution) 5mL Ammonium hexachlororhodate (0.001%NaCl 20% aqueous solution) 7mL 4 liquid: 100mL water Silver nitrate 50g 5 liquid: 100mL water Sodium chloride 13g Potassium bromide 11g Yellow prussic acid 5mg

[0204] The emulsion was then washed by the usual flocculation method. Specifically, the temperature of the resulting solution was lowered to 35°C, and the pH was lowered using sulfuric acid until the silver halide precipitated (pH 3.6 ± 0.2). Approximately 3 L of the supernatant was removed from the resulting solution (first wash). 3 L of distilled water was then added to the resulting solution, and sulfuric acid was added until the silver halide precipitated. Another 3 L of the supernatant was removed from the resulting solution (second wash). The same procedure as the second wash was repeated once more (third wash), completing the washing and desalting steps. The washed and desalted emulsion was adjusted to pH 6.4 and pAg 7.5, and chemically sensitized at 55°C to obtain the optimum sensitivity by adding 2.5 g of gelatin, 10 mg of sodium benzenethiosulfonate, 3 mg of sodium benzenethiosulfinate, 15 mg of sodium thiosulfate, and 10 mg of chloroauric acid. Then, 100 mg of 1,3,3a,7-tetraazaindene as a stabilizer and 100 mg of Proxel (trade name, manufactured by ICI Co., Ltd.) as a preservative were added to the resulting emulsion. The finally obtained emulsion was a silver chlorobromide cubic grain emulsion containing 0.08 mol % silver iodide and a silver chlorobromide ratio of 70 mol % silver chloride and 30 mol % silver bromide, with an average grain size (equivalent to a sphere) of 200 nm and a coefficient of variation of 9%. The resulting emulsion is also referred to as "Silver Halide Emulsion A" or simply "Emulsion A."

[0205] [Preparation of Photosensitive Layer Forming Composition] The above emulsion A was mixed with 1,3,3a,7-tetraazaindene (1.2 × 10 -4 mol / mol Ag), hydroquinone (1.2 × 10 -2 mol / mol Ag), citric acid (3.0 × 10 -4 The composition was then adjusted to a pH of 5.6 with citric acid. To the above composition, a polymer latex containing a polymer represented by the following structural formula (P-1) (hereinafter also referred to as "Polymer 1"), a dispersant consisting of dialkylphenyl PEO (PEO is an abbreviation for polyethylene oxide) sulfate ester, and water (the ratio of the mass of dispersant to the mass of Polymer 1 (mass of dispersant / mass of Polymer 1, unit: g / g) was 0.02, and the solid content was 22% by mass) was added so that the ratio of the mass of Polymer 1 to the total mass of gelatin in the composition (mass of Polymer 1 / mass of gelatin, unit: g / g) was 0.25 / 1, thereby obtaining a polymer latex-containing composition. Here, in the polymer latex-containing composition, the ratio of the mass of gelatin to the mass of silver derived from silver halide (mass of gelatin / mass of silver derived from silver halide, unit: g / g) was 0.11. Furthermore, EPOXY RESIN DY 022 (trade name: manufactured by Nagase ChemteX Corporation) was added as a crosslinking agent to the polymer latex-containing composition. The amount of the crosslinking agent added was determined so that the amount of the crosslinking agent in the silver halide-containing photosensitive layer described below was 0.09 g / m. 2 It was adjusted so that In this manner, a composition for forming a photosensitive layer was prepared. Polymer 1 was synthesized with reference to Japanese Patent Nos. 3305459 and 3754745.

[0206] [ka]

[0207] [Formation of Undercoat Layer] The above-mentioned polymer latex was applied to both sides of a 40 μm thick polyethylene terephthalate (PET) film substrate (a roll of long film manufactured by Fujifilm Corporation) to form a 0.05 μm thick primer layer. This process was carried out by roll-to-roll, and the following processes (steps) were also carried out by the same roll-to-roll method. The roll width was 1 m and the length was 1000 m.

[0208] [Process H1, Process A1, Process I1] Next, the silver halide-free layer-forming composition, which was a mixture of the above-mentioned polymer latex and gelatin, the above-mentioned photosensitive layer-forming composition, and the protective layer-forming composition, which was a mixture of the above-mentioned polymer latex and gelatin, were simultaneously coated on the undercoat layer in a multilayer manner to form a silver halide-free layer, a silver halide-containing photosensitive layer, and a protective layer on the undercoat layer. The resulting photosensitive layer-containing laminate was designated Photosensitive Film A. The thickness of the silver halide-free layer was 2.0 μm, the mixture mass ratio of polymer 1 to gelatin in the silver halide-free layer (polymer 1 / gelatin) was 2 / 1, and the content of polymer 1 was 1.3 g / m 2 It was. The thickness of the silver halide-containing photosensitive layer was 2.5 μm, the mixture mass ratio of polymer 1 to gelatin in the silver halide-containing photosensitive layer (polymer 1 / gelatin) was 0.25 / 1, and the content of polymer 1 was 0.19 g / m 2 It was. The thickness of the protective layer was 0.15 μm, the mixture mass ratio of polymer 1 to gelatin in the protective layer (polymer 1 / gelatin) was 0.1 / 1, and the content of polymer 1 was 0.015 g / m 2 It was.

[0209] [Process B1] The photosensitive film A thus prepared was exposed to parallel light from a high-pressure mercury lamp as a light source through a lattice-shaped photomask (hereinafter also referred to as a "mesh pattern electrode"). A pattern-forming mask was used as the photomask, and the line width of the unit square lattice forming the lattice shown in Figure 2 was 1.2 μm, and the length L of one side of the lattice (opening) was 600 μm.

[0210] After exposure, the resulting sample was developed with the developer described below and further developed using a fixer (product name: N3X-R for CN16X: manufactured by Fujifilm Corporation). It was then rinsed with pure water at 25°C and dried to obtain Sample A, a conductive substrate having a conductive layer including conductive thin wire portions containing metallic silver and transparent insulating portions, with the conductive thin wire portions formed in a mesh pattern. In Sample A, a conductive mesh pattern region measuring 21.0 cm x 29.7 cm was formed.

[0211] (Developer composition) The following compounds are contained in 1 liter (L) of developer: Hydroquinone 0.037 mol / L N-methylaminophenol 0.016 mol / L Sodium metaborate 0.140 mol / L Sodium hydroxide 0.360 mol / L Sodium bromide 0.031 mol / L Potassium metabisulfite 0.187 mol / L

[0212] The obtained sample was immersed in warm water at 50° C. for 180 seconds, then the water was removed with an air shower and the sample was allowed to dry naturally.

[0213] [Process C1] The sample obtained in step B1 was placed in a superheated steam treatment tank at 110°C and left to stand for 30 seconds to undergo superheated steam treatment. The steam flow rate at this time was 100 kg / h.

[0214] [Process D1] The sample obtained in step C1 was immersed in an aqueous protease solution (40°C) for 30 seconds. The sample was removed from the aqueous protease solution and washed by immersing it in warm water (liquid temperature: 50°C) for 120 seconds. The water was then removed with an air shower and the sample was allowed to air dry. The aqueous protease solution used was prepared according to the following procedure. Triethanolamine and sulfuric acid were added to an aqueous solution of a protease (Biophrase 30L, manufactured by Nagase ChemteX Corporation) (protease concentration: 0.5% by mass) to adjust the pH to 8.5.

[0215] [Process G1] The sample obtained in step D1 was placed in a superheated steam treatment tank at 110°C and left to stand for 30 seconds to undergo superheated steam treatment. The steam flow rate at this time was 100 kg / h.

[0216] [Process P1] The sample obtained in step G1 was immersed in treatment solution A (40°C) for 60 seconds. The sample was removed from treatment solution A and washed by immersing it in water at 25°C for 50 seconds. Treatment solution A (total amount 1200 g) had the following composition. Compound (1) was a compound synthesized by the above method, and all components other than compound (1) were manufactured by Fujifilm Wako Pure Chemical Industries, Ltd. (Composition of Processing Solution A) ·Compound (1) 6.0g 597g of ethanol ·Water remainder

[0217] [Drying process] The sample obtained in step P1 was heated at 65°C for 90 seconds and dried. Through the above steps, a sample of a conductive substrate having a mesh pattern electrode made of conductive thin wires was produced.

[0218] [Examples 2 to 13] Samples of the conductive substrates of Examples 2 to 13 were each produced according to the procedure described in Example 1, except that when preparing the treatment liquid used in step P1, the specific compounds listed in Table 1 described below were used and the content of the specific compounds per total area of the conductive thin wires and transparent insulating portion was appropriately adjusted to the amount listed in Table 1 described below.

[0219] [Example 14] [Process E1] The sample obtained in step D1 of Example 1 was immersed for 5 minutes in a plating solution (30°C) having the following composition: The sample was removed from the plating solution and immersed in warm water (50°C) for 120 seconds to be washed. The plating solution (total volume 1200 mL) had the following composition: The pH of the plating solution was 9.9, which was adjusted by adding a predetermined amount of potassium carbonate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) The following components used were all manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.

[0220] (Plating Solution Composition) 2.1g AgNO3 86g sodium sulfite Sodium thiosulfate pentahydrate 60g Aron T-50 (manufactured by Toagosei Co., Ltd., solid content 40%) 36g Methylhydroquinone 13g Potassium carbonate (prescribed amount) ·Water remainder

[0221] Thereafter, the sample was immersed for 90 seconds in a treatment solution (40°C) having the following composition: The sample was removed from the treatment solution and immersed in warm water (30°C) for 40 seconds to be washed. The obtained sample was placed in a superheated steam treatment tank at 110°C and left to stand for 30 seconds to undergo superheated steam treatment. The steam flow rate at this time was 100 kg / h. The composition of the treatment liquid (total volume 1200 mL) was as follows: All of the following components used were manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.

[0222] (Composition of Processing Solution) 2-Mercapto-5-benzimidazolesulfonic acid sodium salt pentahydrate 3.2g ·Water remainder

[0223] A sample of a conductive substrate was prepared according to the procedure described in Example 7, except that in step P1, the sample obtained in step E1 was used instead of the sample obtained in step G1.

[0224] [Examples 15 to 18] Samples of the conductive substrates of Examples 15 to 18 were each produced according to the procedure described in Example 14, except that when preparing the treatment liquid used in step P1, the specific compounds listed in Table 1 described below were used and the content of the specific compounds per total area of the conductive thin wires and transparent insulating portion was appropriately adjusted to the amount listed in Table 1 described below.

[0225] [Examples 19 to 23] A sample of the conductive substrate of Example 19 was prepared according to the procedure described in Example 7, except that in Step H1, Step A1, and Step I1, a surfactant shown in Table A below was added to the composition for forming a silver halide-free layer, the composition for forming a photosensitive layer, and the composition for forming a protective layer to prepare Photosensitive Film A. In addition, in step I1, samples of conductive substrates of Examples 20 to 23 were prepared according to the procedure described in Example 7, except that photosensitive film A was prepared by adding the surfactant shown in Table A below to the composition for forming the protective layer. The content of surfactant contained in each composition was adjusted appropriately so that the content of surfactant contained in each layer per area of the conductive thin wire was the amount shown in Table A below.

[0226] [Table 1]

[0227] [Comparative Examples 1 to 2] A sample of a conductive substrate was produced according to the procedure described in Example 1, except that step P1 was not carried out on the sample obtained in step G1 (Comparative Example 1). Furthermore, a sample of a conductive substrate was produced according to the procedure described in Example 14, except that step P1 was not carried out on the sample obtained in step E1 (Comparative Example 2).

[0228] [Measurement and Evaluation] As the change over time in corrosion resistance of the conductive thin wires on the conductive substrate, the change over time in sulfuration resistance was evaluated by the following procedure.

[0229] [Quantitative determination of specific compounds] The content of the specific compound contained in each conductive substrate produced in the examples was determined by the following method. The prepared samples were cut into 1 cm x 1 cm pieces. 15 cut samples were immersed in 100 mL of tetrahydrofuran (temperature: 30°C) and left to stand for 24 hours to extract specific compounds contained in the samples. After taking out a sample from the tetrahydrofuran solution, the tetrahydrofuran solution containing the extracted specific compound was measured by high performance liquid chromatography (HPLC)-mass spectrometry under the following measurement conditions, and the specific compound was quantified by the absolute calibration curve method. Table 1 below shows the content (unit: nmol / cm) of specific compounds contained in each sample per total area of the conductive thin wires and transparent insulating part. 2 ) is shown. The specific compounds contained in the 40 μm-thick polyethylene terephthalate film used to prepare each conductive substrate were quantified using the method described above, and the content of the specific compounds was found to be below the detection limit.

[0230] (HPLC measurement conditions) Column: ODS (Octadecyl Silyl) column (4.6 mm x 50 mm) (GL Sciences, Inc., "InertSustain AQ-C18") Eluent: 0.1% phosphoric acid aqueous solution / 0.1% phosphoric acid acetonitrile (mixing ratio: 50 / 50) Flow rate: 0.7mL / min Detector: Photodiode array Sample injection volume: 10 μL

[0231] [Changes in sulfuration resistance over time] The change over time in sulfuration resistance of each of the conductive substrates produced in the Examples and Comparative Examples was evaluated by the sulfuration resistance test method described below.

[0232] <Sulfuration resistance test> The resistance (R0) of the fabricated mesh-patterned samples was measured. For each sample, the electrical resistance (unit: kΩ) between terminals at a distance of 4 cm was measured using an Agilent 34405A multimeter. Next, an OCA film (3M's "OCA CEF1906") was attached to the surface of the sample on which the resistance value was measured, to obtain a laminate sample. At this time, the surface of the OCA film from which the light release film had been peeled was attached to the sample, while the heavy release film was left attached to the OCA film. Thereafter, the laminate sample was pressurized in an autoclave (40°C, 0.5 MPa, 20 minutes) and irradiated with ultraviolet light (metal halide light source, 200 mW / cm). 2 , 3J / cm 2 ) The laminate sample was then cut so that the distance from the cut end to the mesh pattern formed by the conductive thin wire portion was 1 mm. The laminate sample was left standing at 70°C for 4 days to prepare an evaluation sample. The beaker containing the evaluation sample and 100 g of sulfur was placed in a sealed desiccator and left to stand for 4 days at 70°C. After removing the evaluation sample, the OCA film was peeled off while the evaluation sample was heated at 70°C, and the resistance value (R1) of the sample was measured in the same manner as above. The resistance change rate was calculated from the measured resistance value using the formula: Resistance change rate = (R1 / R0-1) × 100 [%]. From the calculated resistance change rate, the change in sulfuration resistance of each sample over time was evaluated according to the following criteria. If the change in sulfuration resistance over time was evaluated as A, B, or C, it was considered to be satisfactory for practical use.

[0233] (Evaluation criteria for changes in sulfur resistance over time) "A": Resistance change rate is 15% or less. "B": Resistance change rate is more than 15% and less than 30%. "C": Resistance change rate is more than 30% and less than 50%. "D": Resistance change rate is over 50%.

[0234] [FPC connectivity] For each example and comparative example, an evaluation sample having an FPC connection pattern was prepared according to the method for preparing a conductive substrate sample described in Example 1, except that the grid-shaped photomask used in step B1 of Example 1 was changed to a photomask corresponding to the pattern of a plurality of first detection electrodes 11, a plurality of first extraction wirings 13, and a plurality of first external connection terminals 14 (hereinafter also referred to as the "FPC connection pattern") shown in Figures 3, 4, and 5. As shown in Fig. 3, each evaluation sample had a plurality of first detection electrodes 11, a plurality of first lead-out wirings 13, and a plurality of first external connection terminals 14 formed on one surface of a substrate 2. In this case, the line width of the first lead-out wirings 13 was 5 µm, the line width of the thin line portions (thin metal wires 30 in Fig. 5) of the first external connection terminals 14 was 2 µm, and the spacing between the thin line portions of the thin metal wires 30 was a 20 µm square. The outer shape of the first external connection terminals 14 was a width W of 150 µm and a length L of 1500 µm.

[0235] (FPC connectivity test) An FPC was bonded to the external connection terminals of the prepared evaluation sample via an anisotropic conductive film (ACF) CP920CM-25AC (manufactured by Dexerials) by pre-press bonding at 100°C for 3 seconds and final pressing at 130°C under 2.5 MPa for 10 seconds. After bonding, the sample was aged at 60°C and 90% RH for 10 days, and then the resistance between the external output terminals on the FPC and the connection between the external connection terminals and the lead wiring was measured. This test was performed on 10 connection terminals, and the FPC connectivity of each sample was evaluated based on the average value according to the following criteria. FPC connectivity ratings of A, B, or C were considered acceptable for practical use.

[0236] (FPC connectivity evaluation criteria) "A": Resistance value is 0.5Ω or less. "B": Resistance value is over 0.5Ω and 1.5Ω or less. "C": Resistance change rate is over 1.5Ω and 5.0Ω or less. "D": Resistance change rate is over 5.0Ω.

[0237] [result] The following table shows the types of specific compounds used in the examples and the evaluation results.

[0238] [Table 2]

[0239] From the results shown in the above table, it was confirmed that the conductive substrate of the present invention suppresses deterioration over time in the corrosion resistance of the conductive thin wires.

[0240] From a comparison of Example 1 and Examples 2 to 23, it is clear that Q and Y in the group represented by formula (2) 1 It has been confirmed that when represents a hydroxyl group or a sulfonamide group, the effects of the present invention are more excellent.

[0241] Comparison of Examples 1-2 and Examples 3-23 confirmed that the effects of the present invention are even better when the specific compound is represented by formula (1A) and r is an integer of 1 or more, or when the specific compound is represented by formula (1B) and s is an integer of 2 or more.

[0242] Comparison of Examples 1 and 2 with Examples 3 to 23 confirmed that when the molecular weight of the specific compound is 700 or more, the effects of the present invention are even more excellent.

[0243] Comparison of Examples 13 and 18 with Examples 1 to 12, 14 to 17, and 19 to 23 shows that the content of the specific compound per total area of the conductive thin wires and transparent insulating portion is 20 nmol / cm 2 It was confirmed that the FPC connectivity is better when the following conditions are met:

[0244] [Example 101] First, a 50 μm thick PET film (Cosmoshine A4300, manufactured by Toyobo Co., Ltd.) with easy-adhesion layers formed on both sides was prepared as a transparent insulating substrate.

[0245] [Formation of copper film] Next, copper oxide films were formed as adhesive layers on both sides of the PET film. Specifically, using copper as a target, sputtering was performed under the conditions of a pressure in the deposition chamber of 0.4 Pa, a power density of 1.7 W / cm2, and a roll temperature of 90°C while introducing a mixed gas of oxygen gas (flow rate: 90 sccm) and argon gas (flow rate: 270 sccm) into the sputtering apparatus. The thickness of the resulting copper oxide film was 20 nm.

[0246] Next, a copper film was formed on one of the copper oxide films formed on both sides of the PET film. Specifically, using copper as a target, sputtering was performed under the conditions of a pressure inside the film formation chamber of 0.4 Pa, a power density of 4.2 W / cm2, and a roll temperature during film formation of 90°C while argon gas (flow rate: 270 sccm) was introduced into the sputtering apparatus. In the laminate thus obtained, the copper film had a thickness of 300 nm.

[0247] [Formation of Conductive Thin Wires] After forming the copper film, an anti-rust treatment was performed on the copper film, and then the copper film was patterned by photolithography using the following method to form conductive thin wires. First, a positive resist was applied to the copper film to a thickness of 2 μm. Next, a glass photomask was prepared having a mesh pattern with a line width of 5 μm corresponding to the mesh pattern shown in Figure 2. With the glass photomask placed on the resist film, the copper film was irradiated with a metal halide lamp, and then the laminate with the resist film was immersed in a 3% aqueous sodium hydroxide solution for development, resulting in a resist film having a pattern corresponding to the mesh pattern shown in Figure 2. Using this resist film as a mask, the copper oxide film and the copper film were simultaneously etched using a 5% aqueous solution of ferric chloride to form a mesh pattern of metal wiring. Finally, the remaining resist film was peeled off to produce a sample with conductive thin wires formed in the mesh pattern shown in Figure 2 on the substrate.

[0248] [Process P101] The obtained sample was immersed in treatment solution A (40°C) for 60 seconds. The sample was removed from treatment solution A and washed by immersing it in water at 25°C for 50 seconds. Treatment solution A (total amount 1200 g) had the following composition. Compound (1) was a compound synthesized by the above method, and all components other than compound (1) were manufactured by Fujifilm Wako Pure Chemical Industries, Ltd. (Composition of Processing Solution A) ·Compound (1) 6.0g 597g of ethanol ·Water remainder

[0249] [Drying process] The sample obtained in step P101 was heated at 65°C for 90 seconds and dried. Through the above steps, a sample of a conductive substrate having a mesh pattern electrode made of conductive thin wires was produced.

[0250] [Examples 102 to 113] Samples of conductive substrates of Examples 102 to 113 were each produced according to the procedure described in Example 101, except that when preparing the treatment liquid used in step P101, the specific compound listed in Table 2 described below was used and the content of the specific compound per surface area of the substrate on which the conductive thin wires were formed was appropriately adjusted to the amount listed in Table 2 described below.

[0251] [Evaluation of humidity and heat resistance] As the change over time in the corrosion resistance of the conductive thin wires on the conductive substrate, the change over time in the wet heat resistance (oxidation resistance) was evaluated by the following procedure. The resistance (R0) of the fabricated mesh-patterned samples was measured. For each sample, the electrical resistance (unit: kΩ) between terminals at a distance of 4 cm was measured using an Agilent 34405A multimeter. Next, an OCA film (3M's "OCA CEF1906") was attached to the surface of the sample on which the resistance value was measured, to obtain a laminate sample. At this time, the surface of the OCA film from which the light release film had been peeled was attached to the sample, while the heavy release film was left attached to the OCA film. Thereafter, the laminate sample was pressurized in an autoclave (40°C, 0.5 MPa, 20 minutes) and irradiated with ultraviolet light (metal halide light source, 200 mW / cm). 2 , 3J / cm 2 Further, the laminate sample was cut so that the distance from the cut end to the mesh pattern formed by the conductive thin wire portion was 1 mm, and an evaluation sample was obtained. The evaluation sample was left to stand for 10 days in an environment of 85°C and 85% RH. After removing the evaluation sample, the OCA film was peeled off while the evaluation sample was heated at 70°C, and the resistance value (R1) of the sample was measured in the same manner as above. The resistance change rate was calculated from the measured resistance value using the formula: resistance change rate = (R1 / R0-1) × 100 [%]. From the calculated resistance change rate, the change in humidity and heat resistance over time of each sample was evaluated according to the following criteria. If the change in humidity and heat resistance over time was evaluated as A, B, or C, it was considered to be satisfactory for practical use.

[0252] (Evaluation criteria for changes in humidity and heat resistance over time) "A": Resistance change rate is 15% or less. "B": Resistance change rate is more than 15% and less than 30%. "C": Resistance change rate is more than 30% and less than 50%. "D": Resistance change rate is over 50%.

[0253] [result] The following table shows the types of specific compounds used in the examples and the evaluation results.

[0254] [Table 3]

[0255] From the results shown in the above table, it was confirmed that the conductive substrate of the present invention suppresses deterioration over time in the corrosion resistance of the conductive thin wires.

[0256] From a comparison of Example 101 and Examples 102 to 113, it is clear that Q and Y in the group represented by formula (2) 1 It has been confirmed that when represents a hydroxyl group or a sulfonamide group, the effects of the present invention are more excellent.

[0257] Comparison of Examples 101 to 102 and Examples 103 to 113 confirmed that the effects of the present invention are even better when the specific compound is represented by formula (1A) and r is an integer of 1 or more, or when the specific compound is represented by formula (1B) and s is an integer of 2 or more.

[0258] Comparison of Examples 101 to 102 and Examples 103 to 113 confirmed that when the molecular weight of the specific compound is 700 or more, the effects of the present invention are even more excellent.

[0259] From a comparison of Example 111 with Examples 101 to 110 and 112 to 113, it was found that the content of the specific compound per area of the surface of the substrate on which the conductive thin wires were formed was 0.02 nmol / cm 2 In the above cases, it was confirmed that the effects of the present invention are even more excellent. [Explanation of symbols]

[0260] REFERENCE SIGNS LIST 1 conductive substrate, 2 base material, 2A first surface, 2B second surface, 3 conductive layer, 3A first conductive layer, 3B second conductive layer, 4 conductive thin wire, 5 transparent insulating portion, 6 non-thin wire portion, 10 touch sensor film, 11 first detection electrode, 13 first lead wiring, 14 first external connection terminal, 15, 25 wiring portion, 16, 26 terminal portion, 21 second detection electrode, 23 second lead wiring, 24 second external connection terminal, 30 first metal thin wire, MP pattern, MW metal thin wire, Q1 first electrode region, Q2 second electrode region

Claims

1. A substrate; a conductive thin wire disposed on the substrate, The conductive thin wire comprises a metal and at least one specific compound selected from the group consisting of a compound represented by the following formula (1A) and a compound represented by the following formula (1B): 【Chemical 1】 In formula (1A) and formula (1B), E １ ~E ６ each independently represents a single bond, —O—, —S—, —NH—, or —NR—, and R represents a substituent. B １ , B ２ , B ３ , and B ４ represent k+1, l+1, m+1, and n+1 valent organic groups, respectively. １ , B ２ , B ３ , and B ４ At least one of B represents an aromatic ring group having a valence of k+1, l+1, m+1, or n+1, which may have a substituent; １ and B ２ At least one of the groups represents an optionally substituted aromatic ring group having a valence of k+1 or 1+1. k, l, m, and n each independently represent an integer of 0 or more, provided that the sum of k, l, m, and n in formula (1A) is 2 or more, and the sum of k and l in formula (1B) is 2 or more. Each L independently represents a divalent organic group. r represents an integer of 0 or more. T represents an s-valent organic group. s represents an integer of 1 or more. X １ ~X ４ and Z １ ~Z ２ each independently represents a group represented by formula (2). 【Chemistry 2】 In formula (2), * represents a bonding position. D １ each independently represents a single bond or a divalent linking group. A １ each independently represents an aromatic ring group which may have a substituent, or an aliphatic ring group which may have a substituent. Q and Y １ each independently represents a specific functional group selected from the group consisting of a hydroxyl group, an amino group, a thiol group, a carboxylic acid group, a sulfonic acid group, an amide group, a sulfonamide group, and an alkoxy group. Each p independently represents an integer of 0 or more. Each q independently represents an integer of 0 to 2.

2. Q and Y １ The conductive substrate according to claim 1 , wherein each independently represents a hydroxyl group or a sulfonamide group.

3. r represents an integer of 1 or more; The conductive substrate according to claim 1 , wherein s represents an integer of 2 or more.

4. The conductive substrate according to claim 1 , wherein the specific compound has a molecular weight of 700 or more.

5. Q and Y １ each independently represents a hydroxyl group or a sulfonamide group, r represents an integer of 1 or more; s represents an integer of 2 or more; The conductive substrate according to claim 1 , wherein the specific compound has a molecular weight of 700 or more.

6. The substrate further includes a transparent insulating portion that does not contain metal and is disposed adjacent to the thin conductive wires, the transparent insulating portion contains a specific compound, The content of the specific compound per total area of the conductive thin wires and the transparent insulating portion is 7 to 25 nmol / cm ２ The conductive substrate according to claim 1 ,

7. The conductive substrate of claim 1 , wherein the metal comprises silver.

8. There is no transparent insulating portion adjacent to the conductive thin wire on the substrate, The content of the specific compound per area of the surface of the substrate on which the conductive thin wires are arranged is 0.01 to 2.5 nmol / cm ２ The conductive substrate according to claim 1 ,

9. The conductive substrate according to claim 1 , having a mesh pattern formed by the conductive thin wires.

10. A touch panel comprising the conductive substrate according to any one of claims 1 to 9.

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