Method and device for measuring size of metal plate and method for manufacturing mask

Abstract

To provide a method and device for more exactly measuring the size of a metal plate constituting a mask, and a method for manufacturing the mask.SOLUTION: A method for measuring the size of a metal plate constituting a mask comprises: an arrangement step of arranging the metal plate so that the metal plate overlaps with a support surface 811 of a stage 81 in a plane view; a pulling step of generating electric force pulling the metal plate on the support surface; and a measurement step of measuring the size of the metal plate.SELECTED DRAWING: Figure 12

Description

[Technical Field]

[0001] FIELD Embodiments of the present disclosure relate to a method and apparatus for measuring dimensions of a metal plate, and a method for manufacturing a mask. [Background technology]

[0002] There is a market demand for high-definition display devices in electronic devices such as smartphones and tablet PCs, which have pixel densities of, for example, 400 ppi or more or 800 ppi or more.

[0003] Organic electroluminescent (EL) display devices have attracted attention due to their excellent response, low power consumption, and high contrast. Vapor deposition is a known method for forming components of organic EL display devices, such as pixels and electrodes, on a substrate. Vapor deposition uses a masking device. The masking device includes a mask with multiple through-holes and a frame that supports the mask. Layers constituting the pixels, electrodes, etc. are formed on the substrate by the material passing through the multiple through-holes and adhering to the substrate. The accuracy of the shape and position of the layer formed on the substrate is affected by the accuracy of the shape and position of the through-holes in the mask. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2019 / 049600 Summary of the Invention [Problem to be solved by the invention]

[0005] The metal plate that constitutes the mask may contain locally warped portions, which hinder accurate mask inspection. [Means for solving the problem]

[0006] A method for measuring the dimensions of a metal plate according to one embodiment of the present disclosure may include a positioning step of positioning the metal plate so that the metal plate overlaps a support surface of a stage in a planar view, a attracting step of generating an electrical force that attracts the metal plate toward the support surface, and a measuring step of measuring the dimensions of the metal plate. [Effects of the Invention]

[0007] According to the present disclosure, the dimensions of a metal plate can be measured more accurately. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of an organic device. [Figure 2] FIG. 2 is a plan view showing an example of an organic device group. [Figure 3] FIG. 1 is a cross-sectional view showing an example of a vapor deposition apparatus. [Figure 4] FIG. 1 is a plan view showing an example of a mask device. [Figure 5] FIG. 1 is a plan view showing an example of a mask. [Figure 6] FIG. 1 is a cross-sectional view showing an example of a mask. [Figure 7] FIG. 2 is a diagram showing an example of a rolling process for rolling a base material. [Figure 8] 1A to 1C are diagrams showing a processing step for forming a plurality of through holes in a metal plate. [Figure 9] FIG. 1 is a diagram showing an example of a mask having local warpage. [Figure 10] FIG. 1 is a diagram showing an example of a mask having local warpage. [Figure 11] FIG. 1 is a diagram showing an example of a mask having local warpage. [Figure 12] FIG. 1 is a diagram illustrating an example of a measuring device. [Figure 13] FIG. 10 is a cross-sectional view showing an example of a pulling device. [Figure 14] FIG. 1 is a diagram illustrating an example of a measuring device. [Figure 15] FIG. 10 is a cross-sectional view showing an example of a pulling device. DETAILED DESCRIPTION OF THE INVENTION

[0009] In this specification and drawings, unless otherwise specified, terms that refer to a material that forms the basis of a certain configuration, such as "substrate," "base material," "plate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0010] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0011] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirectly in contact. Unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the reversed up-down direction.

[0012] In this specification and drawings, unless otherwise specified, the same or similar symbols are used for the same parts or parts having similar functions, and repeated explanations may be omitted. For convenience of explanation, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0013] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other embodiments to the extent that no contradiction occurs. Other embodiments may also be combined with each other to the extent that no contradiction occurs.

[0014] In the present specification and drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. The order of the disclosed steps is arbitrary within the range that does not cause a contradiction.

[0015] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values before and after the symbol "to." For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

[0016] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic electroluminescence (EL) display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form components of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). For example, the mask of this embodiment may be used to form components of a display device other than an organic electroluminescence (EL) display device, such as electrodes of a liquid crystal display device. For example, the mask of this embodiment may be used to form components of a device other than a display device, such as electrodes of a pressure sensor.

[0017] A first aspect of the present disclosure is a method for measuring dimensions of a metal plate, comprising: a positioning step of positioning the metal plate so that the metal plate overlaps a support surface of a stage in a plan view; a pulling step of generating an electrical force that pulls the metal plate toward the support surface; and a measuring step of measuring the dimensions of the metal plate.

[0018] A second aspect of the present disclosure may include the following aspect in the measurement method according to the first aspect: The metal plate may constitute a mask, and the mask may include a first end and a second end facing each other in a first direction, and an intermediate portion located between the first end and the second end and having a plurality of through holes formed therein.

[0019] A third aspect of the present disclosure may include the following aspect in the measurement method according to the first or second aspect: The measurement step may include a first measurement step of measuring a dimension of the metal plate in the first direction, and a second measurement step of measuring a dimension of the metal plate in a second direction perpendicular to the first direction.

[0020] A fourth aspect of the present disclosure may include the following aspect in the measurement method according to the second aspect: Each of the plurality of through holes may have a dimension of 50 μm or less.

[0021] A fifth aspect of the present disclosure may include the following feature in the measurement method according to any one of the first to fourth aspects: The metal plate may have a thickness of 30 μm or less.

[0022] A sixth aspect of the present disclosure may include the following aspect in the measurement method according to any one of the first to fifth aspects: The electrical force may be a Coulomb force or a Johnsen-Rahbek force.

[0023] A seventh aspect of the present disclosure may include the following aspects in the measurement method according to the sixth aspect: The stage may be constituted by an electrostatic chuck.

[0024] An eighth aspect of the present disclosure may include the following aspect in the measurement method according to the sixth aspect: The attracting step may include a charging step of charging the metal plate, and a step of attracting the charged metal plate to the support surface using a conductor.

[0025] A ninth aspect of the present disclosure may be the measurement method according to the eighth aspect, further comprising the following aspect: The charging step may be performed by a charging bar positioned above the metal plate and extending across the metal plate in a plan view.

[0026] A tenth aspect of the present disclosure may be the following aspect in the measurement method according to any one of the first to ninth aspects: The measuring step may include an observation step of observing the metal plate using a camera positioned above the metal plate.

[0027] An eleventh aspect of the present disclosure may be the measurement method according to the tenth aspect, further comprising the following: The observing step may include a step of detecting positions of a plurality of marks on the surface of the metal plate.

[0028] A twelfth aspect of the present disclosure may include the following aspect in the measurement method according to any one of the first to eleventh aspects: The metal plate may be disposed on a glass plate.

[0029] A thirteenth aspect of the present disclosure may include the following feature in the measurement method according to the twelfth aspect: The glass plate may have a thickness of 100 μm or more and 2000 μm or less.

[0030] A fourteenth aspect of the present disclosure is a method for manufacturing a mask, comprising: providing a metal plate; forming a plurality of through holes in the metal plate; a step of partially cutting out the metal plate in which the through holes are formed to obtain the mask; and measuring the dimensions of the mask using the measurement method according to any one of the first to thirteenth aspects.

[0031] A fifteenth aspect of the present disclosure is a device for measuring dimensions of a metal plate, a stage including a support surface on which the metal plate is placed in a plan view; a pulling device that generates an electrical force that pulls the metal plate toward the support surface; The measuring device includes an observation device for observing the metal plate.

[0032] A sixteenth aspect of the present disclosure may be the measurement device according to the fifteenth aspect, further comprising the following aspect: The pulling device may include an electrostatic chuck that functions as the stage.

[0033] A seventeenth aspect of the present disclosure may be the measurement device according to the fifteenth aspect, further comprising: the attracting device may include a charging device that charges the metal plate, and a conductor that attracts the charged metal plate to the support surface.

[0034] An eighteenth aspect of the present disclosure may be the measurement device according to the seventeenth aspect, further comprising the following aspect: The charging device may include a charging bar positioned above the metal plate and extending across the metal plate in a plan view.

[0035] A nineteenth aspect of the present disclosure may be the measurement device according to any one of the fifteenth to eighteenth aspects, further comprising the following aspect: The observation device may include a camera positioned above the metal plate.

[0036] A nineteenth aspect of the present disclosure may include the following aspect in the measurement device according to any one of the fifteenth to nineteenth aspects: The measurement device may include a glass plate supporting the metal plate.

[0037] An embodiment of the present disclosure will be described in detail with reference to the drawings. The following embodiment is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0038] An organic device 100 including elements formed using a mask will be described below. FIG. 1 is a cross-sectional view showing an example of the organic device 100.

[0039] The organic device 100 includes a substrate 110 including a first surface 111 and a second surface 112, and a plurality of elements 115 located on the first surface 111 of the substrate 110. The elements 115 are, for example, pixels. The elements 115 may be aligned along an in-plane direction of the first surface 111. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0040] The element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130. The element formed by using a mask may be the organic layer 130 or the second electrode 140. The element formed by using a mask is also referred to as a deposited layer.

[0041] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap edges of the first electrodes 120 in a plan view.

[0042] The organic device 100 may be an active matrix type. For example, although not shown, the organic device 100 may include a switch electrically connected to each of the multiple elements 115. The switch is, for example, a transistor. The switch can control the ON / OFF of a voltage or current to the corresponding element 115.

[0043] The substrate 110 may be an insulating plate-like member. The substrate 110 is preferably transparent so as to transmit light. The material of the substrate 110 may be, for example, a rigid material with no flexibility, such as quartz glass, Pyrex (registered trademark) glass, or a synthetic quartz plate, or a flexible material with flexibility, such as a resin film, an optical resin plate, or thin glass. The base material may also be a laminate having a barrier layer on one or both sides of a resin film.

[0044] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140, or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that forms an image.

[0045] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0046] The organic layer 130 includes an organic material. When a current flows through the organic layer 130, the organic layer 130 can perform some function. The organic layer 130 may be a light-emitting layer that emits light in response to a current. The organic layer 130 may include an organic semiconductor material. The transmittance, refractive index, and other properties of the organic layer 130 may be adjusted as appropriate.

[0047] 1, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0048] When a voltage is applied between the first electrode 120 and the second electrode 140, a current flows through the organic layer 130. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0049] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

[0050] The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by a mask-based vapor deposition method. Materials that can be used to form the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), and carbon. These materials can be used alone or in combination of two or more. When two or more materials are used, layers made of each material can be stacked. An alloy containing two or more materials can also be used. For example, magnesium alloys such as MgAg and aluminum alloys such as AlLi, AlCa, and AlMg can be used. MgAg is also called magnesium silver. Magnesium silver is preferably used as the material for the second electrode 140. Alloys of alkali metals and alkaline earth metals can also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc. can be used.

[0051] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of the other element 115.

[0052] The second electrode 140 may be composed of a single layer. For example, the second electrode 140 may be a layer formed by a vapor deposition process using a single mask.

[0053] Alternatively, as shown in FIG. 1 , the second electrode 140 may include a first layer 140A and a second layer 140B. The first layer 140A may be a layer formed by a vapor deposition process using a first mask. The second layer 140B may be a layer formed by a vapor deposition process using a second mask. In this manner, the second electrode 140 may be formed using two or more masks. This increases the degree of freedom in the pattern of the second electrode 140 in plan view. For example, the organic device 100 may include a region where the second electrode 140 is not present in plan view. The region where the second electrode 140 is not present may have a higher transmittance than the region where the second electrode 140 is present.

[0054] 1, the end of the first layer 140A and the end of the second layer 140B may partially overlap, thereby electrically connecting the first layer 140A and the second layer 140B.

[0055] Although not shown, the second electrode 140 may include other layers, such as a third layer, which may be electrically connected to the first layer 140A and the second layer 140B.

[0056] In the following description, when describing the configuration of the second electrode 140 that is common to the first layer 140A, the second layer 140B, the third layer, etc., the term "second electrode 140" and the reference numerals will be used.

[0057] In the method for manufacturing the organic device 100, an organic device group 102 as shown in FIG. 2 may be fabricated. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in a first direction D1 and a second direction D2. The second direction D2 is a direction intersecting the first direction D1. The second direction D2 may be perpendicular to the first direction D1. A single substrate 110 may be used for two or more organic devices 100. For example, the organic device group 102 may be located on a single substrate 110 and include layers such as a first electrode 120, an organic layer 130, and a second electrode 140 that constitute two or more organic devices 100. The organic device 100 is obtained by dividing the organic device group 102.

[0058] The first direction D1 may be the direction in which a mask used to manufacture the organic device 100 extends, as will be described later.

[0059] The dimension A1 of the organic device 100 in the first direction D1 may be, for example, 10 mm or more, 30 mm or more, or 100 mm or more. The dimension A1 may be, for example, 200 mm or less, 500 mm or less, or 1000 mm or less. The range of the dimension A1 may be defined by a first group consisting of 10 mm, 30 mm, and 100 mm and / or a second group consisting of 200 mm, 500 mm, and 1000 mm. The range of the dimension A1 may be defined by a combination of any one of the values included in the first group described above with any one of the values included in the second group described above. The range of the dimension A1 may be defined by a combination of any two of the values included in the first group described above. The range of the dimension A1 may be defined by a combination of any two of the values included in the second group described above. For example, the dimension A1 may be 10 mm or more and 1000 mm or less, 10 mm or more and 500 mm or less, 10 mm or more and 200 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 30 mm or less, 30 mm or more and 1000 mm or less, 30 mm or more and 500 mm or less, 30 mm or more and 200 mm or less, 30 mm or more and 100 mm or less, 100 mm or more and 1000 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 200 mm or less, 200 mm or more and 1000 mm or less, 200 mm or more and 500 mm or less, or 500 mm or more and 1000 mm or less.

[0060] The dimension A2 of the organic device 100 in the second direction D2 may be, for example, 10 mm or more, 20 mm or more, or 50 mm or more. The dimension A2 may be, for example, 100 mm or less, 200 mm or less, or 500 mm or less. The range of the dimension A2 may be defined by a first group consisting of 10 mm, 20 mm, and 50 mm and / or a second group consisting of 100 mm, 200 mm, and 500 mm. The range of the dimension A2 may be defined by a combination of any one of the values included in the first group described above with any one of the values included in the second group described above. The range of the dimension A2 may be defined by a combination of any two of the values included in the first group described above. The range of the dimension A2 may be defined by a combination of any two of the values included in the second group described above. For example, the dimension A2 may be 10 mm or more and 500 mm or less, 10 mm or more and 200 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 500 mm or less, 20 mm or more and 200 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 50 mm or more and 500 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 200 mm or less, or 200 mm or more and 500 mm or less.

[0061] The organic device group 102 includes a device region 103 in which a plurality of organic devices 100 are located. The device region 103 has a dimension G12 in a first direction D1 and a dimension G22 in a second direction D2.

[0062] By increasing the size of the substrate 110, the dimensions G12 and G22 of the device region 103 can be increased, thereby increasing the number of organic devices 100 formed on one substrate 110. This allows the manufacturing cost of the organic devices 100 to be reduced.

[0063] The dimension G11 of the substrate 110 in the first direction D1 may be, for example, 1000 mm or more, 1200 mm or more, 1300 mm or more, or 2100 mm or more. The dimension G11 may be, for example, 1200 mm or less, 1300 mm or less, 1900 mm or less, 2100 mm or less, or 2300 mm or less. The range of the dimension G11 may be defined by a first group consisting of 1000 mm, 1200 mm, 1300 mm, and 2100 mm, and / or a second group consisting of 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of the dimension G11 may be defined by a combination of any one of the values included in the first group described above with any one of the values included in the second group described above. The range of the dimension G11 may be defined by a combination of any two of the values included in the first group described above. The range of the dimension G11 may be defined by a combination of any two of the values included in the second group mentioned above. For example, the dimension G11 may be 1000 mm or more and 2300 mm or less, 1000 mm or more and 2100 mm or less, 1000 mm or more and 1900 mm or less, 1000 mm or more and 1300 mm or less, 1000 mm or more and 1200 mm or less, 1200 mm or more and 2300 mm or less, 1200 mm or more and 2100 mm or less, 1200 mm or more and 1900 mm or less, 1200 mm or more and 1300 mm or less, 1300 mm or more and 2300 mm or less, 1300 mm or more and 2100 mm or less, 1300 mm or more and 1900 mm or less, 1900 mm or more and 2300 mm or less, 1900 mm or more and 2100 mm or less, or 2300 mm or less.

[0064] The dimension G21 of the substrate 110 in the second direction D2 may be, for example, 1200 mm or more, 1300 mm or more, 1500 mm or more, 2000 mm or more, or 2400 mm or more. The dimension G21 may be, for example, 1300 mm or less, 2300 mm or less, 2400 mm or less, or 2600 mm or less. The range of the dimension G21 may be defined by a first group consisting of 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm, and / or a second group consisting of 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of the dimension G21 may be defined by a combination of any one of the values included in the first group described above with any one of the values included in the second group described above. The range of the dimension G21 may be defined by a combination of any two of the values included in the first group described above. The range of the dimension G21 may be determined by a combination of any two of the values included in the second group described above. For example, the dimension G21 may be 1200 mm or more and 2600 mm or less, 1200 mm or more and 2400 mm or less, 1200 mm or more and 2300 mm or less, 1200 mm or more and 1500 mm or less, 1200 mm or more and 1300 mm or less, 1300 mm or more and 2600 mm or less, 1300 mm or more and 2400 mm or less, or 1300 mm or more and 2300 mm or less. It may be 1300mm or less and 1500mm or less, 1500mm or more and 2600mm or less, 1500mm or more and 2400mm or less, 1500mm or more and 2300mm or less, 2000mm or more and 2300mm or less, 2300mm or more and 2600mm or less, 2300mm or more and 2400mm or less, or 2400mm or more and 2600mm or less.

[0065] A specific numerical range for the dimension G11 may be combined with a specific numerical range for the dimension G21. For example, the dimension G11 may be 1000 mm or more and 1200 mm or less, and the dimension G21 may be 1200 mm or more and 1300 mm or less. For example, the dimension G11 may be 1200 mm or more and 1300 mm or less, and the dimension G21 may be 2000 mm or more and 2300 mm or less. For example, the dimension G11 may be 2100 mm or more and 2300 mm or less, and the dimension G21 may be 2400 mm or more and 2600 mm or less.

[0066] Next, a method for forming elements such as the organic layer 130 and the second electrode 140 by vapor deposition using a mask will be described.

[0067] The deposition method performed using the mask 50 may be physical vapor deposition or chemical vapor deposition. Physical vapor deposition includes, for example, vacuum deposition, ion plating, and sputtering. In both physical vapor deposition and chemical vapor deposition, a deposition layer is formed on the target at a position that overlaps the through-hole of the mask 50. The target may be, for example, a substrate.

[0068] Fig. 3 is a diagram showing an example of a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process to deposit a vapor deposition material on a substrate 110. In the example shown in Fig. 3, the vapor deposition apparatus 10 performs vacuum vapor deposition.

[0069] As shown in FIG. 3, the vapor deposition apparatus 10 may include an evaporation source 6, a heater 8, and a mask device 15 therein. The vapor deposition apparatus 10 may also include an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The evaporation source 6 is, for example, a crucible. The evaporation source 6 contains an evaporation material 7, such as an organic material or a metal material. The heater 8 heats the evaporation source 6 to evaporate the evaporation material 7 under a vacuum atmosphere.

[0070] As shown in FIG. 3 , the mask device 15 includes at least one mask 50. The mask device 15 may include a frame 40 that supports the mask 50. The frame 40 includes an opening 45. The mask 50 may extend across the opening 45 in a plan view. The mask 50 is fixed to the frame 40. The frame 40 may include a frame first surface 401 to which the mask 50 is fixed, and a frame second surface 402 located on the opposite side of the frame first surface 401. The frame 40 may support the mask 50 in a state where it is pulled in the direction of its surface so as to prevent the mask 50 from bending.

[0071] 3, the mask device 15 is disposed in the deposition device 10 so that the mask 50 faces the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 that allow the deposition material 7 flying from the deposition source 6 to pass through. In the following description, the surface of the mask 50 facing the substrate 110 will be referred to as the first surface 61. The surface of the mask 50 located opposite the first surface 61 will be referred to as the second surface 62. A portion of the second surface 62 faces the frame first surface 401.

[0072] As shown in FIG. 3 , the deposition apparatus 10 may include a substrate holder 2 that holds a substrate 110. The substrate holder 2 may be movable in the thickness direction of the substrate 110. The substrate holder 2 may be movable in the surface direction of the substrate 110. The substrate holder 2 may be configured to control the tilt of the substrate 110. For example, the substrate holder 2 may include multiple chucks attached to the outer edge of the substrate 110. Each chuck may be independently movable in the thickness direction or the surface direction of the substrate 110.

[0073] 3, the deposition apparatus 10 may include a mask holder 3 that holds a mask device 15. The mask holder 3 may be movable.

[0074] By moving at least one of the substrate holder 2 and the mask holder 3, the position of the mask 50 relative to the substrate 110 can be adjusted.

[0075] The deposition apparatus 10 may include a cooling plate 4. The cooling plate 4 may be disposed on the second surface 112 side of the substrate 110, as shown in Fig. 3 . The cooling plate 4 may have a flow path for circulating a coolant inside the cooling plate 4. The cooling plate 4 can suppress an increase in temperature of the substrate 110 during the deposition process.

[0076] The deposition apparatus 10 may include a magnet 5. As shown in FIG. 3, the magnet 5 may be disposed on the second surface 112 of the substrate 110. The magnet 5 may also be disposed on the surface of the cooling plate 4 that is farther from the substrate 110. The magnet 5 can attract the mask 50 toward the substrate 110 by magnetic force. This reduces or eliminates the gap between the mask 50 and the substrate 110. This prevents shadows from occurring during the deposition process. A shadow is a phenomenon in which the deposition material 7 enters the gap between the mask 50 and the substrate 110, causing the shape of the deposition layer to become uneven. The shape of the deposition layer refers to the thickness of the deposition layer, the dimensions of the deposition layer in a planar view, and the like. The mask 50 may be attracted toward the substrate 110 using an electrostatic chuck that utilizes electrostatic force.

[0077] 4 is a plan view showing the mask device 15. The mask device 15 may include a frame 40 and a plurality of masks 50 fixed to the frame 40. The frame 40 includes an opening 45 that overlaps the plurality of masks 50. The frame 40 may have a rectangular outline extending in a first direction D1 and a second direction D2. The frame 40 may support the masks 50 while applying tension to the masks 50 in the first direction D1. The plurality of masks 50 may be aligned in the second direction D2.

[0078] The mask 50 is fixed to the frame 40. In a plan view, the mask 50 includes a first end 51, a second end 52, and an intermediate portion 53. The first end 51 and the second end 52 overlap sides of the frame 40 in a plan view. The first end 51 and the second end 52 may face each other in the first direction D1. The intermediate portion 53 is located between the first end 51 and the second end 52 in a plan view. The intermediate portion 53 overlaps the opening 45 in a plan view. The intermediate portion 53 includes a group of through holes 54. The intermediate portion 53 may include a plurality of groups of through holes 54 aligned in the first direction D1.

[0079] The mask 50 will be described in detail. FIG. 5 is a plan view showing an example of the mask 50. In the plan view, the mask 50 may include a first side edge 501 and a second side edge 502 extending in a first direction D1, and a first end 503 and a second end 504. The first end 503 and the second end 504 are ends of the mask 50 in the first direction D1. The first side edge 501 and the second side edge 502 are ends of the mask 50 in the second direction D2.

[0080] The through-hole group 54 of the intermediate portion 53 includes a plurality of through-holes 56 that are regularly arranged in a plan view. The through-holes 56 may be arranged periodically in two directions. For example, the through-holes 56 may be arranged periodically in the first direction D1 and the second direction D2.

[0081] One through-hole group 54 corresponds to one organic device 100. For example, the multiple first organic layers 130A included in one organic device 100 are formed by the deposition material that has passed through the multiple through-holes 56 of one through-hole group 54. The mask 50 includes at least one through-hole group 54. The mask 50 may include two or more through-hole groups 54 aligned in the first direction D1.

[0082] 5, the intermediate portion 53 may include two or more first marks 57 aligned along the first side edge 501. The first marks 57 may be located between the first side edge 501 and the group of through holes 54 in the second direction D2. The intermediate portion 53 may include two or more second marks 58 aligned along the second side edge 502. The second marks 58 may be located between the second side edge 502 and the group of through holes 54 in the second direction D2.

[0083] When the through-hole group 54 has a rectangular outline, the first mark 57 and the second mark 58 may be arranged to correspond to corners of the outline of the through-hole group 54. For example, one first mark 57 or one second mark 58 may be arranged to correspond to one corner of the outline of the through-hole group 54.

[0084] The mask 50 may have dimensions L11, L12, L21, and L22. The dimension L11 is the distance between two first marks 57 that are furthest apart in the first direction D1. The dimension L12 is the distance between two second marks 58 that are furthest apart in the first direction D1. The dimension L21 is the distance in the second direction D2 between the first mark 57 closest to the first end 503 and the second mark 58 closest to the first end 503. The dimension L22 is the distance in the second direction D2 between the first mark 57 closest to the second end 504 and the second mark 58 closest to the second end 504. In a process of measuring the dimensions of the mask 50, which will be described later, at least one of the dimensions L11, L12, L21, and L22 may be measured.

[0085] The first mark 57 and the second mark 58 are, for example, depressions formed on the first surface 61 or the second surface 62. The depth of the depressions may be, for example, 2 μm or more, 3 μm or more, or 5 μm or more. The depth of the depressions may be, for example, 10 μm or less, 20 μm or less, or 30 μm or less. The range of depression depths may be defined by a first group consisting of 2 μm, 3 μm, and 5 μm and / or a second group consisting of 10 μm, 20 μm, and 30 μm. The range of depression depths may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of depression depths may be defined by a combination of any two of the values included in the first group. The range of depression depths may be defined by a combination of any two of the values included in the second group. For example, the depth of the depressions may be 2 μm or more and 30 μm or less, 2 μm or more and 20 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 30 μm or less, 3 μm or more and 20 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 30 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 10 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, or 20 μm or more and 30 μm or less.

[0086] The dimensions of the first mark 57 and the second mark 58 in plan view may be larger than a dimension r (described below) of the through portion 564 of the through hole 56. The ratio of the dimensions of the first mark 57 and the second mark 58 in plan view to the dimension r of the through portion 564 may be, for example, 1.03 or more, 2.0 or more, or 5.0 or more. The ratio of the dimensions of the first mark 57 and the second mark 58 in plan view to the dimension r of the through portion 564 may be, for example, 5.0 or less, 10 or less, or 50 or less. The range of the ratio of the dimensions of the first mark 57 and the second mark 58 in plan view to the dimension r of the through portion 564 may be defined by a first group consisting of 1.03, 2.0, and 5.0, and / or a second group consisting of 5.0, 10, and 50. The range of the ratio of the dimensions of the first mark 57 and the second mark 58 in plan view to the dimension r of the through portion 564 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the ratio of the dimensions of the first mark 57 and the second mark 58 in plan view to the dimension r of the through portion 564 may be determined by a combination of any two of the values included in the first group described above. The range of the ratio of the dimensions of the first mark 57 and the second mark 58 in plan view to the dimension r of the through portion 564 may be determined by a combination of any two of the values included in the second group described above. For example, the ratio of the dimension of the first mark 57 and the second mark 58 in a planar view to the dimension r of the through portion 564 may be 1.03 or more and 50 or less, or 1.03 or more and 10 or less, or 1.03 or more and 5.0 or less, or 1.03 or more and 5.0 or less, or 1.03 or more and 2.0 or less, or 2.0 or more and 50 or less, or 2.0 or more and 10 or less, or 2.0 or more and 5.0 or less, or 2.0 or more and 5.0 or less, or 5.0 or more and 50 or less, or 5.0 or more and 10 or less, or 5.0 or more and 50 or less, or 5.0 or more and 10 or less, or 10 or more and 50 or less.

[0087] The contour of the mask 50 has a dimension M11 in the first direction D1. The dimension M11 may be, for example, 600 mm or more, 800 mm or more, or 1000 mm or more. The dimension M11 may be, for example, 1200 mm or less, 1500 mm or less, or 2000 mm or less. The range of the dimension M11 may be defined by a first group consisting of 600 mm, 800 mm, and 1000 mm and / or a second group consisting of 1200 mm, 1500 mm, and 2000 mm. The range of the dimension M11 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension M11 may be defined by a combination of any two of the values included in the first group. The range of the dimension M11 may be defined by a combination of any two of the values included in the second group. For example, the dimension M11 may be 600 mm or more and 2000 mm or less, 600 mm or more and 1500 mm or less, 600 mm or more and 1200 mm or less, 600 mm or more and 1000 mm or less, 600 mm or more and 800 mm or less, 800 mm or more and 2000 mm or less, 800 mm or more and 1500 mm or less, 800 mm or more and 1200 mm or less, 800 mm or more and 1000 mm or less, 1000 mm or more and 2000 mm or less, 1000 mm or more and 1500 mm or less, 1000 mm or more and 1200 mm or less, 1200 mm or more and 2000 mm or less, 1200 mm or more and 1500 mm or less, or 1500 mm or more and 2000 mm or less.

[0088] The contour of the mask 50 has a dimension M21 in the second direction D2. The dimension M21 may be, for example, 50 mm or more, 100 mm or more, or 150 mm or more. The dimension M21 may be, for example, 200 mm or less, 300 mm or less, or 500 mm or less. The range of the dimension M21 may be defined by a first group consisting of 50 mm, 100 mm, and 150 mm and / or a second group consisting of 200 mm, 300 mm, and 500 mm. The range of the dimension M21 may be defined by a combination of any one of the values included in the first group described above with any one of the values included in the second group described above. The range of the dimension M21 may be defined by a combination of any two of the values included in the first group described above. The range of the dimension M21 may be defined by a combination of any two of the values included in the second group described above. For example, the dimension M21 may be 50 mm or more and 500 mm or less, 50 mm or more and 300 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 150 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 200 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 200 mm or less, 200 mm or more and 500 mm or less, 200 mm or more and 300 mm or less, or 300 mm or more and 500 mm or less.

[0089] Next, a description will be given of the cross-sectional structure of the mask 50. Fig. 6 is a cross-sectional view showing an example of the mask 50.

[0090] The mask 50 includes a metal plate 60 and a through hole 56 that penetrates the metal plate 60. The metal plate 60 includes a first surface 61 and a second surface 62. The through hole 56 penetrates the metal plate 60 from the first surface 61 to the second surface 62.

[0091] The through hole 56 may include a first recess 561, a second recess 562, and a connecting portion 563 connecting the first recess 561 and the second recess 562. The first recess 561 is located on the first surface 61 and is recessed toward the second surface 62. The second recess 562 is located on the second surface 62 and is recessed toward the first surface 61. The first recess 561 and the second recess 562 are connected by the connecting portion 563 to form the through hole 56. The first recess 561 is formed by processing the metal plate 60 from the first surface 61 side by etching, a laser, or the like. The second recess 562 is formed by processing the metal plate 60 from the second surface 62 side by etching, a laser, or the like.

[0092] The first recess 561 has a dimension r1 in plan view. The second recess 562 has a dimension r2 in plan view. The dimension r2 may be greater than the dimension r1. For example, the outline of the second recess 562 may surround the outline of the first recess 561 in plan view.

[0093] The connecting portion 563 is located between the first surface 61 and the second surface 62. The connecting portion 563 may have a continuous contour around the entire circumference. The connecting portion 563 may define a through portion 564 where the opening area of the through hole 56 is minimized when the mask 50 is seen in a plan view.

[0094] The dimension r of the through portion 564 may be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. The dimension r of the through portion 564 may be, for example, 40 μm or less, 45 μm or less, 50 μm or less, or 55 μm or less. The range of the dimension r of the through portion 564 may be defined by a first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm, and / or a second group consisting of 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the dimension r of the through portion 564 may be defined by a combination of any two of the values included in the first group. The range of the dimension r of the through portion 564 may be determined by a combination of any two of the values included in the second group described above.For example, the dimension r of the through portion 564 may be 10 μm or more and 55 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 45 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or more and 15 μm or more and 55 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 45 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or more and 55 μm or less , or may be 20 μm or more and 50 μm or less, or may be 20 μm or more and 45 μm or less, or may be 20 μm or more and 40 μm or less, or may be 20 μm or more and 25 μm or less, or may be 25 μm or more and 55 μm or less, or may be 25 μm or more and 50 μm or less, or may be 25 μm or more and 45 μm or less, or may be 25 μm or more and 40 μm or less, or may be 40 μm or more and 50 μm or less, or may be 40 μm or more and 45 μm or less, or may be 45 μm or more and 50 μm or less.

[0095] The dimension r of the through portion 564 is determined by the light transmitted through the through hole 56. Specifically, parallel light is incident on one of the first surface 61 or the second surface 62 of the mask 50 along the normal direction of the mask 50, passes through the through hole 56, and is emitted from the other of the first surface 61 or the second surface 62. The dimension of the area occupied by the emitted light in the surface direction of the mask 50 is adopted as the dimension r of the through portion 564.

[0096] 6 shows an example in which the second surface 62 of the metal plate 60 remains between two adjacent second recesses 562, but this is not limiting. Although not shown, etching may be performed so that two adjacent second recesses 562 are connected. In other words, there may be a location between two adjacent second recesses 562 where the second surface 62 of the metal plate 60 does not remain.

[0097] The materials of the mask 50 and the frame 40 will now be described. An iron alloy containing nickel can be used as the main material for the mask 50 and the frame 40. The iron alloy may further contain cobalt in addition to nickel. For example, the metal plate of the mask 50 can be made of an iron alloy containing nickel and cobalt in total at a content of 28% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less. This reduces the difference between the thermal expansion coefficients of the mask 50 and the frame 40 and the substrate 110, which contains glass. This prevents the dimensional accuracy and positional accuracy of layers formed on the substrate 110 by vapor deposition from being reduced due to thermal expansion of the mask 50, frame 40, substrate 110, etc.

[0098] The total content of nickel and cobalt in the metal plate of the mask 50 may be 28% by mass or more and 38% by mass or less. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super Invar, and Ultra Invar. Invar is an iron alloy containing 34% by mass or more and 38% by mass or less of nickel, with the balance being iron and unavoidable impurities. Super Invar is an iron alloy containing 30% by mass or more and 34% by mass or less of nickel, cobalt, and the balance being iron and unavoidable impurities. Ultra Invar is an iron alloy containing 28% by mass or more and 34% by mass or less of nickel, 2% by mass or more and 7% by mass or less of cobalt, 0.1% by mass or more and 1.0% by mass or less of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, and the balance being iron and unavoidable impurities.

[0099] The total content of nickel and cobalt in the mask 50 may be 38% by mass or more and 54% by mass or less. For example, the mask 50 may be made of an iron alloy containing 38% by mass or more and 54% by mass or less of nickel, with the remainder being iron and unavoidable impurities. Such a mask 50 may be manufactured by a plating method.

[0100] If the temperatures of the mask 50, frame 40, and substrate 110 do not reach high temperatures during the vapor deposition process, it is not necessary to set the thermal expansion coefficients of the mask 50 and frame 40 to values equivalent to that of the substrate 110. In this case, materials other than the iron alloys described above may be used as the material for the mask 50. For example, iron alloys other than the nickel-containing iron alloys described above, such as iron alloys containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy known as stainless steel may be used. Furthermore, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, may also be used.

[0101] The thickness T0 of the mask 50 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. Alternatively, the thickness T0 may be, for example, 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less. The range of the thickness T0 may be defined by a first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm, and / or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of the thickness T0 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the thickness T0 may be defined by a combination of any two of the values included in the first group. The range of the thickness T0 may be defined by a combination of any two of the values included in the second group. For example, the thickness T0 may be 8 μm or more and 50 μm or less, 8 μm or more and 40 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 20 μm or less, 8 μm or more and 15 μm or less, 8 μm or more and 13 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 40 μm or less, 10 μm or more and 30 μm or less, 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 10 μm or more and 13 μm or more and 13 μm or more and 50 μm or less. Alternatively, it may be 13 μm or more and 40 μm or less, 13 μm or more and 30 μm or less, 13 μm or more and 20 μm or less, 13 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, 15 μm or more and 40 μm or less, 15 μm or more and 30 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 40 μm or less, 20 μm or more and 30 μm or less, 30 μm or more and 50 μm or less, 30 μm or more and 40 μm or more and 40 μm or more and 50 μm or less.

[0102] Setting the thickness T0 to 50 μm or less can prevent the deposition material 7 from adhering to the wall surfaces of the through-holes 56 before passing through the through-holes 56. Setting the thickness T0 to 30 μm or less can further prevent the deposition material 7 from adhering to the wall surfaces. Prevention of the deposition material 7 from adhering to the wall surfaces can improve the utilization efficiency of the deposition material 7. Setting the thickness T0 to 8 μm or more can ensure the strength of the mask 50, thereby preventing damage or deformation of the mask 50.

[0103] An example of a method for manufacturing the metal plate 60 will be described. First, a base material 64 for the metal plate is prepared. The base material 64 is made by melting raw materials in a melting furnace. After the base material 64 is removed from the melting furnace, a grinding step may be performed to remove the surface of the base material 64.

[0104] Next, as shown in FIG. 7 , a rolling step is performed to roll the base material 64. For example, the base material 64 is transported toward a rolling device 65 while applying tension to the base material 64 in direction F. The rolling device 65 includes a pair of work rolls 66, 67. The base material 64 is rolled by the pair of work rolls 66, 67. By rolling, the thickness of the base material 64 is reduced and the base material 64 is elongated along direction F. By rolling, a metal plate 60 is obtained that is elongated in direction F and has a predetermined thickness T. The direction F in which the metal plate 60 elongates is also referred to as the rolling direction F. The rolling direction F may be parallel to the first direction D1 of the mask 50.

[0105] The rolling process may include a hot rolling process, a cold rolling process, etc. Between the hot rolling process and the cold rolling process, a heat treatment process may be performed to heat the metal plate 60. After the rolling process, an annealing process may be performed.

[0106] An example of a method for manufacturing a mask 50 using a metal plate 60 will be described. A resist film is provided on a first surface 61 and a second surface 62 of the metal plate 60. The resist film is then exposed to light and developed. Through the exposure and development steps, a first resist pattern is formed on the first surface 61, and a second resist pattern is formed on the second surface 62. The first resist pattern and the second resist pattern include openings corresponding to the through holes 56.

[0107] A first etching step is carried out in which the first surface 61 is etched using an etching solution. By the first etching step, a plurality of first recesses 531 are formed in the first surface 61. Recesses constituting the first marks 57 and the second marks 58 may be formed in the first surface 61 at the same time as the first recesses 531.

[0108] A second etching step is carried out in which the second surface 62 is etched using an etching solution. By the second etching step, a plurality of second recesses 532 are formed in the second surface 62. The recesses constituting the first marks 57 and the second marks 58 may be formed in the second surface 62 simultaneously with the second recesses 532. The recesses on the first surface 61 and the recesses on the second surface 62 are connected to form the through holes 56.

[0109] A plurality of through holes 56 are formed in the metal plate 60 by the first etching step and the second etching step.

[0110] 8 is a plan view showing an example of a metal plate 60 having a plurality of through holes 56 formed therein. The mask 50 is obtained by partially cutting out the metal plate 60 having the plurality of through holes 56 formed therein. For example, the mask 50 is obtained by cutting out the region indicated by the dotted line from the metal plate 60.

[0111] 8, the region indicated by the dotted line may extend in the rolling direction F. That is, the first direction D1 may be parallel to the rolling direction F. As shown in FIG. 8, two or more masks 50 may be taken out from the metal plate 60 in a direction perpendicular to the rolling direction F.

[0112] 9 to 11 are diagrams showing an example of the mask 50 removed from the metal plate 60. Local warping may occur in the mask 50. In the example shown in FIG. 9, a wavy shape extending along the first direction D1 appears at the first side edge 501 and the second side edge 502 of the mask 50. In the examples shown in FIGS. 10 and 11, a wavy shape extending along the first direction D1 appears at a position between the first side edge 501 and the second side edge 502. The cause of local warping in the mask 50 is not particularly limited.

[0113] The manufacturing method of the mask 50 may include an inspection step of inspecting the mask 50. The inspection step may include, for example, a dimension measurement step of measuring the dimensions of the mask 50. The quality of the mask 50 may be determined based on the measured dimensions.

[0114] An example of a method for measuring the dimensions of the mask 50 will be described. FIG. 12 is a diagram showing an example of a measuring device 80 for measuring the dimensions of the mask 50. The measuring device 80 includes at least a stage 81 on which the mask 50 is placed, a pulling device 82, and an observation device 89. The observation device 89 observes the mask 50 placed on the stage 81. The observation device 89 may include, for example, a camera 891 positioned above the mask 50 placed on the stage 81. The measuring device 80 may include a computer that controls the processes performed by the measuring device 80.

[0115] The stage 81 is a platform on which an observation target such as the mask 50 is placed. The stage 81 includes a support surface 811 on which the mask 50 is placed in a plan view. The support surface 811 may extend in the horizontal direction.

[0116] 12 , the measurement device 80 may include a glass plate 87 that is positioned between the support surface 811 of the stage 81 and the mask 50 and supports the mask 50. The glass plate 87 is disposed on the support surface 811 of the stage 81. The mask 50 may be in contact with the glass plate 87.

[0117] The pulling device 82 generates an electrical force that pulls the mask 50 onto the support surface 811. The electrical force can cause the mask 50 to have a flatter shape. For example, the electrical force can eliminate the wavy shape of the mask 50.

[0118] When the above-described frame 40 of the mask device 15 applies tension to the mask 50, the mask 50 has high flatness. That is, when the mask 50 is in a state where it is in use, the mask 50 has high flatness. The dimension measurement process is preferably carried out in a state where the mask 50 is close to a state where it is in use. By using the pulling device 82, the dimension measurement process can be carried out in a state where the mask 50 is close to a state where it is in use.

[0119] The electric force generated by the attraction device 82 may be a Coulomb force, a Johnsen-Rahbek force, etc. As shown in FIG.

[0120] The electrostatic chuck 83 may include a first electrode layer 831 and a second electrode layer 832. The first electrode layer 831 and the second electrode layer 832 may be aligned parallel to each other in the in-plane direction of the support surface 811. The direction of the voltage applied to the first electrode layer 831 and the direction of the voltage applied to the second electrode layer 832 may be opposite. For example, a negative voltage may be applied to the first electrode layer 831, and a positive voltage may be applied to the second electrode layer 832. Charges in the mask 50 move so as to attract each other between the first electrode layer 831 and the second electrode layer 832. As shown in FIG. 13 , positive charges are distributed in the mask 50 overlapping the first electrode layer 831 in a plan view, and negative charges are distributed in the mask 50 overlapping the second electrode layer 832 in a plan view. The charges on the first electrode layer 831 and the second electrode layer 832 and the charges on the mask 50 attract each other, generating an electric force that attracts the mask 50 to the support surface 811 .

[0121] The glass plate 87 preferably has a small thickness. The smaller the thickness of the glass plate 87, the more the electrical force caused by the glass plate 87 is suppressed from being reduced. The thickness of the glass plate 87 may be, for example, 100 μm or more, 200 μm or more, or 300 μm or more. The thickness of the glass plate 87 may be, for example, 500 μm or less, 1000 μm or less, or 2000 μm or less. The thickness range of the glass plate 87 may be defined by a first group consisting of 100 μm, 200 μm, and 300 μm, and / or a second group consisting of 500 μm, 1000 μm, and 2000 μm. The thickness range of the glass plate 87 may be defined by a combination of any one of the values included in the first group and any one of the values included in the second group. The thickness range of the glass plate 87 may be defined by a combination of any two of the values included in the first group. The range of thickness of the glass plate 87 may be determined by a combination of any two of the values included in the second group mentioned above. The thickness of the glass plate 87 may be, for example, 100 μm or more and 2000 μm or less, 100 μm or more and 1000 μm or less, 100 μm or more and 500 μm or less, 100 μm or more and 300 μm or less, 100 μm or more and 200 μm or less, 200 μm or more and 2000 μm or less, 200 μm or more and 1000 μm or less, 200 μm or more and 500 μm or less, 200 μm or more and 300 μm or less, 300 μm or more and 2000 μm or less, 300 μm or more and 1000 μm or less, 300 μm or more and 500 μm or less, 500 μm or more and 2000 μm or less, 500 μm or more and 1000 μm or less, or 1000 μm or more and 2000 μm or less.

[0122] The electrostatic chuck 83 may function as the stage 81. For example, the electrostatic chuck 83 may include a support surface 811. The support surface 811 may be made of an inorganic material such as ceramics.

[0123] The measurement device 80 may include a moving device that moves the observation device 89 along an in-plane direction of the support surface 811. The moving device may include a first moving device 91 and a second moving device 92. The second moving device 92 may move the observation device 89 along the second direction D2. The second moving device 92 may support the observation device 89 at a position above the mask 50. The first moving device 91 may move the second moving device 92 along the first direction D1. The first moving device 91 may support the second moving device 92 at a position above the mask 50.

[0124] The observation device 89 observes the mask 50 at a plurality of positions in the first direction D1 and the second direction D2. Based on the observation results by the observation device 89, the dimensions of the mask 50 are measured. The observation device 89 may include an optical transmitter that emits light toward the support surface 811. The dimensions of the mask 50 may be calculated based on the light reflected from the mask 50, the glass plate 87, or the support surface 811. For example, the dimensions of the mask 50 may be calculated based on the light reflected from the first mark 57 and the second mark 58 on the mask 50.

[0125] An example of a measurement method using the measurement device 80 will be described.

[0126] An arrangement step of arranging the mask 50 is performed. For example, a step of arranging the mask 50 on a glass plate 87 and a step of arranging the glass plate 87 on the support surface 811 are performed. If the thickness of the mask 50 is small, it is not easy to arrange the mask 50 directly on the support surface 811. By using the glass plate 87, the arrangement step is facilitated. For example, deformation such as bending of the mask 50 is suppressed.

[0127] Next, an attracting step is performed to generate an electric force that attracts the mask 50 to the support surface 811. For example, a negative charge is applied to the first electrode layer 831 of the electrostatic chuck 83, and a positive charge is applied to the second electrode layer 832. The electric force generated between the electrostatic chuck 83 and the mask 50 attracts the mask 50 toward the support surface 811. The electric force improves the flatness of the shape of the mask 50. For example, the electric force eliminates the wavy shape of the mask 50.

[0128] Next, a measurement step is performed to measure the dimensions of the mask 50. An observation device 89 observes the mask 50 at a plurality of positions in the first direction D1 and the second direction D2. Since the mask 50 has high flatness, the accuracy of the measurement step is improved.

[0129] The measurement process may include a first measurement process and a second measurement process. The first measurement process measures the dimension of the mask 50 in the first direction D1. For example, the first measurement process may calculate the above-mentioned dimensions L11 and L12 of the mask 50 based on the detected positions of the first mark 57 and the second mark 58. The second measurement process measures the dimension of the mask 50 in the second direction D2. For example, the second measurement process may calculate the above-mentioned dimensions L21 and L22 of the mask 50 based on the detected positions of the first mark 57 and the second mark 58.

[0130] Subsequently, a determination step may be performed. In the determination step, the quality of the mask 50 may be determined based on the measured dimensions. For example, a mask 50 whose difference between the measured dimensions and the ideal dimensions is equal to or smaller than a threshold value may be determined to be acceptable. Only masks 50 that are determined to be acceptable may be shipped.

[0131] The mask 50 that has been determined to be acceptable is used in the manufacturing process of the mask device 15. The mask 50 can have high dimensional accuracy when tension is applied to enhance flatness. Therefore, in the state of the mask device 15, the positional accuracy of the multiple through-holes 56 of the mask 50 is improved. Therefore, the positional accuracy of the layer vapor-deposited on the substrate 110 through the mask 50 is improved.

[0132] Various modifications can be made to the embodiment described above. Other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the embodiment described above will be designated by the same reference numerals as those used for the corresponding parts in the embodiment described above, and duplicated descriptions will be omitted. If it is clear that the effects obtained in the embodiment described above can also be obtained in other embodiments, the descriptions thereof may be omitted.

[0133] 14 is a diagram showing an example of a measuring device 80 for measuring the dimensions of the mask 50. The attracting device 82 of the measuring device 80 may include a charging device 84 and a conductor 85.

[0134] The charging device 84 is a device for charging the mask 50. The charging device 84 charges the mask 50 by, for example, corona discharge. The charging device 84 may be located above the mask 50. The charging device 84 may cross the mask 50 in a plan view. The charging device 84 may be a charging bar. The charging bar may include multiple electrodes extending toward the mask 50. By applying a voltage to the multiple electrodes, molecules in the air are charged. The charged molecules attach to the mask 50, thereby charging the mask 50.

[0135] The conductor 85 is a member having electrical conductivity. The conductor 85 may include a metal such as aluminum. The conductor 85 is located between the mask 50 and the stage 81. The conductor 85 may extend in the in-plane direction of the support surface 811 so as to overlap the mask 50 in a plan view.

[0136] The pulling device 82 may include an insulator 86 positioned between the mask 50 and the conductor 85. The insulator 86 may be a member that is movable independently of the conductor 85. The insulator 86 may be an insulating layer formed on the surface of the conductor 85.

[0137] The measuring device 80 may include a glass plate 87 positioned between the conductor 85 and the mask 50. The glass plate 87 may function as the insulator 86. For example, although not shown, the glass plate 87 may be in contact with the conductor 85.

[0138] In the examples shown in FIGS. 14 and 15 , the attracting step includes a charging step in which the mask 50 is charged using a charging device 84. When the mask 50 is charged, a charge of a polarity opposite to that of the charge generated on the mask 50 is generated on the conductor 85. For example, as shown in FIG. 15 , if the mask 50 is positively charged, a negative charge is applied to the conductor 85. The charge on the conductor 85 and the charge on the mask 50 attract each other, generating an electric force that attracts the mask 50 to the support surface 811. The electric force enhances the flatness of the shape of the mask 50. Subsequently, a measuring step is performed in which the dimensions of the mask 50 are measured. Since the mask 50 has high flatness, the accuracy of the measuring step is enhanced.

[0139] The measuring device 80 may be used to measure the dimensions of the metal plate 60 without the through-holes 56 formed therein. The dimensions of the metal plate 60 may be calculated based on the positions of marks formed on the surface of the metal plate 60. The dimensions of the metal plate 60 may also be calculated based on the positions of the contours of the metal plate 60.

Claims

1. A method for measuring dimensions of a metal plate, comprising: a positioning step of positioning the metal plate so that the metal plate overlaps a support surface of a stage in a plan view; a pulling step of generating an electrical force that pulls the metal plate toward the support surface; a measuring step of measuring the dimensions of the metal plate.

2. the metal plate constitutes a mask, 2. The measurement method according to claim 1, wherein the mask includes a first end and a second end that face each other in a first direction, and an intermediate portion located between the first end and the second end and having a plurality of through holes formed therein.

3. 3. The measurement method according to claim 2, wherein the measurement step includes a first measurement step of measuring a dimension of the metal plate in the first direction, and a second measurement step of measuring a dimension of the metal plate in a second direction perpendicular to the first direction.

4. The method of claim 2 , wherein each of the plurality of through holes has a dimension of 50 μm or less.

5. The measurement method according to any one of claims 1 to 4, wherein the metal plate has a thickness of 30 µm or less.

6. The measurement method according to any one of claims 1 to 4, wherein the electrical force is a Coulomb force or a Johnsen-Rahbek force.

7. The measuring method according to claim 6 , wherein the stage is constituted by an electrostatic chuck.

8. The measurement method according to claim 6 , wherein the attracting step includes a charging step of charging the metal plate, and a step of attracting the charged metal plate to the support surface using a conductor.

9. The measurement method according to claim 8 , wherein the charging step is performed by using a charging bar that is positioned above the metal plate and crosses the metal plate in a plan view.

10. The measuring method according to any one of claims 1 to 4, wherein the measuring step includes an observing step of observing the metal plate using a camera positioned above the metal plate.

11. The measuring method according to claim 10 , wherein the observing step includes a step of detecting positions of a plurality of marks on the surface of the metal plate.

12. The measuring method according to any one of claims 1 to 4, wherein in the placing step, the metal plate is placed on a glass plate.

13. The measurement method according to claim 12, wherein the glass plate has a thickness of 100 μm or more and 2000 μm or less.

14. A method for manufacturing a mask, comprising: providing a metal plate; forming a plurality of through holes in the metal plate; a step of partially cutting out the metal plate in which the through holes are formed to obtain the mask; A method for manufacturing a mask, comprising: measuring dimensions of the mask using the measurement method according to any one of claims 1 to 4.

15. A device for measuring dimensions of a metal plate, a stage including a support surface on which the metal plate is placed in a plan view; a pulling device that generates an electrical force that pulls the metal plate toward the support surface; A measuring device comprising: an observation device for observing the metal plate.

16. The measuring device of claim 15 , wherein the attracting device includes an electrostatic chuck that functions as the stage.

17. The measuring device of claim 15 , wherein the attracting device includes a charging device that charges the metal plate, and a conductor that attracts the charged metal plate to the support surface.

18. The measuring device according to claim 17 , wherein the charging device includes a charging bar positioned above the metal plate and extending across the metal plate in a plan view.

19. The measuring device according to any one of claims 15 to 18, wherein the observation device includes a camera positioned above the metal plate.

20. The measuring device according to any one of claims 15 to 18, further comprising a glass plate supporting the metal plate.

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