Film forming apparatus for coating consumable parts, and method for manufacturing consumable parts having silicon-containing films

Abstract

To provide a technique for forming a film while suppressing oxidation.SOLUTION: An apparatus comprises: an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a film deposition apparatus and a method for manufacturing a component having a silicon-containing film. [Background technology]

[0002] Patent Document 1 discloses a method for producing a silicon film by spraying a slurry containing silicon particles by a high velocity flame spraying method. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-48378 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for forming a film while suppressing oxidation. [Means for solving the problem]

[0005] A film formation apparatus according to one aspect of the present disclosure includes a chamber, an exhaust unit, a holding unit, a supply unit, and a heat source. The exhaust unit reduces the pressure inside the chamber to a predetermined vacuum level. The holding unit is disposed inside the chamber and holds a film-forming target member. The supply unit supplies a film-forming material containing silicon to a surface of the film-forming target member. The heat source is capable of heating at the predetermined vacuum level, and melts the supplied film-forming material. [Effects of the Invention]

[0006] According to the present disclosure, a film can be formed while suppressing oxidation. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing an example of a schematic configuration of a film forming apparatus according to the first embodiment. [Figure 2]FIG. 2 is a diagram illustrating an outline of film formation by the film formation apparatus according to the first embodiment. [Figure 3] FIG. 3 is a diagram showing an example of a result of forming a silicon film according to the embodiment. [Figure 4] FIG. 4 is a diagram showing an example of a schematic configuration of a film forming apparatus according to the second embodiment. [Figure 5] FIG. 5 is a diagram illustrating an outline of film formation by the film formation apparatus according to the second embodiment. [Figure 6] FIG. 6 is a diagram showing an example of a schematic configuration of a film forming apparatus according to the third embodiment. [Figure 7] FIG. 7 is a diagram illustrating an outline of film formation by the film formation apparatus according to the third embodiment. [Figure 8] FIG. 8 is a diagram showing an example of a schematic configuration of a film forming apparatus according to the fourth embodiment. [Figure 9] FIG. 9 is a diagram illustrating an outline of film formation by the film formation apparatus according to the fourth embodiment. [Figure 10] FIG. 10 is a diagram showing another example of the schematic configuration of the film forming apparatus according to the first embodiment. [Figure 11] FIG. 11 is a diagram showing another example of the schematic configuration of the film forming apparatus according to the second embodiment. [Figure 12] FIG. 12 is a diagram showing another example of the schematic configuration of the film forming apparatus according to the third embodiment. [Figure 13] FIG. 13 is a diagram showing another example of the schematic configuration of the film forming apparatus according to the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the film forming apparatus and the method for manufacturing a component having a silicon-containing film disclosed in the present application will be described in detail with reference to the drawings. Note that the disclosed film forming apparatus and the method for manufacturing a component having a silicon-containing film are not limited to the present embodiments.

[0009] Silicon (Si) is used as a surface coating material for components inside the chamber of semiconductor manufacturing equipment. When this silicon film is formed in a non-vacuum environment, the surfaces of the silicon particles oxidize during film formation, forming oxidized areas with weak adhesion in the silicon film. These oxidized areas make the silicon particles more likely to peel off from the silicon film, and the peeled silicon particles turn into particles, causing contamination and potentially impairing the functionality of the semiconductor being manufactured.

[0010] Therefore, new technologies for forming films while suppressing oxidation are expected.

[0011] [First embodiment] [Device configuration] A first embodiment will be described. Fig. 1 is a diagram showing an example of a schematic configuration of a film formation apparatus 1 according to the first embodiment. The film formation apparatus 1 according to the first embodiment includes a chamber 10, a mounting table 20, a supply unit 30, a heat source 40, and an exhaust unit 50. The film formation apparatus 1 further includes a control unit 51.

[0012] The chamber 10 is airtight and can be depressurized inside. For example, the chamber 10 is made of a material such as aluminum and has a rectangular box shape.

[0013] The mounting table 20 is disposed in a lower region within the chamber 10. The mounting table 20 is provided with a holding portion 21 that holds a film-forming target member. In the following embodiment, the film-forming target member is a plate-shaped member P, and a film is formed on the surface of the member P. The holding portion 21 is configured to be able to fix the member P. For example, the holding portion 21 is provided with engagement portions 22 on the outer sides of the side surfaces of the member P, and the engaging portions 22 clamp the side surfaces of the member P from the outside, thereby fixing and holding the position of the member P.

[0014] The mounting table 20 is provided with a drive unit 23 that drives the holder 21. The drive unit 23 is configured to move the holder 21 within the upper surface of the mounting table 20. For example, a pair of guide rails 24a and a ball screw 27a are provided parallel to one horizontal direction (a direction perpendicular to the plane of FIG. 1) on the upper surface of the mounting table 20. A moving base 26 is provided on the guide rail 24a. A nut 26a that meshes with the ball screw 27a is fixed to the moving base 26. A driving mechanism, such as a motor and gears, that rotates the ball screw 27a is provided at the end of the ball screw 27a. The moving base 26 is movable along the guide rail 24a by rotating the ball screw 27a with the driving force of the motor. Similarly, a pair of guide rails 24b and a ball screw (not shown) are provided parallel to the moving base 26 in an intersecting direction (the left-right direction in FIG. 1) that intersects the one direction. The holder 21 is provided on the guide rail 24b. A nut meshing with a ball screw is fixed to the holding unit 21. A drive mechanism, such as a motor and gears, that rotates the ball screw is provided at the end of the ball screw. The holding unit 21 is movable in a horizontal intersecting direction along the guide rail 24b by rotating the ball screw with the driving force of the motor. In this way, the moving base 26 on which the holding unit 21 is mounted moves in one direction, and the holding unit 21 moves in the intersecting direction, so that the holding unit 21 is movable in two directions within the upper surface of the mounting table 20. Note that the configuration of the driving unit 23 is not limited to this. The driving unit 23 may have any configuration as long as it can move the holding unit 21 within the upper surface of the mounting table 20.

[0015] A supply unit 30 is disposed above the mounting table 20. The supply unit 30 is airtightly mounted on the ceiling of the chamber 10. The supply unit 30 is provided with a storage unit 31 that stores a film-forming material. In the following embodiment, a case will be described in which silicon is used as the film-forming material and a silicon film is formed on a member P. The storage unit 31 stores powdered silicon as the film-forming material. A tube 32 is connected to the bottom of the storage unit 31. The tube 32 communicates with the storage unit 31 and has a supply port 32a at its bottom end. The powdered silicon stored in the storage unit 31 is supplied into the chamber 10 via the tube 32 and drops onto the member P from the supply port 32a.

[0016] A heat source 40 for heating and melting the film forming material is disposed within the chamber 10. The heat source 40 is capable of heating the film forming material even in a vacuum. Examples of heat sources capable of heating the film forming material even in a vacuum include an electron beam and a laser beam. The heat source 40 emits an electron beam or a laser beam. In the following embodiments, the heat source 40 emits an electron beam 40a, but the heat source 40 may also emit a laser beam. The heat source 40 is disposed so that the emitted electron beam 40a strikes a portion of the surface of the member P where the film forming material is supplied from the supply unit 30. That is, in the first embodiment, the heat source 40 is disposed so that the electron beam 40a strikes a portion of the surface of the member P below the supply port 32a. Note that, although the heat source 40 is disposed within the chamber 10 in FIG. 1, the configuration is not limited to this. A heat source that outputs an electron beam or laser light may be placed outside the chamber 10, and the electron beam or laser light output from the heat source may be guided into the chamber 10 by a light-guiding member such as a mirror, lens, transparent window, or optical fiber, and irradiated onto the component P.

[0017] The exhaust unit 50 may be connected to, for example, an exhaust port 10e provided at the bottom of the chamber 10. The exhaust unit 50 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0018] An opening 10a for carrying in or out the member P is provided in the sidewall of the chamber 10. The opening 10a can be opened and closed by a gate valve 10b.

[0019] The control unit 51 processes computer-executable instructions that cause the film forming apparatus 1 to perform the various steps described in this disclosure. The control unit 51 can be configured to control each element of the film forming apparatus 1 to perform the various steps described herein. The control unit 51 is configured to include, for example, a computer.

[0020] As mentioned above, silicon is used as a surface coating material for components inside the chambers of semiconductor manufacturing equipment. However, when a material like silicon, which is prone to oxidation, is deposited using a non-vacuum process such as thermal spraying, it is difficult to prevent oxidation of the silicon particle surface when the silicon is melted, resulting in the formation of oxidized areas with weak adhesion in the deposited silicon film. These oxidized areas can peel off, and the peeled silicon particles can become particles, causing contamination and impairing the functionality of the semiconductor being manufactured.

[0021] Conventionally, attempts have been made to prevent oxidation in thermal spraying by reducing pressure or replacing with an inert gas, but it has not been possible to reduce the oxygen concentration in the atmosphere to a level where silicon does not oxidize, and the technical challenge of forming a film while suppressing oxidation remains.

[0022] Therefore, the film forming apparatus 1 forms a silicon film by a film forming method described below.

[0023] A member P to be film-formed is transported into the chamber 10 through the opening 10a and placed on the holder 21. The film-forming apparatus 1 holds the placed member P on the holder 21. The film-forming apparatus 1 closes the gate valve 10b, drives the exhaust unit 50, and reduces the pressure inside the chamber 10 to a predetermined vacuum level. For example, the film-forming apparatus 1 reduces the pressure inside the chamber 10 to 10 -6 Torr over 10 -2 Torr or less, more preferably less than 10 -5 Torr over 10 -3The pressure in the chamber 10 is reduced to less than Torr. If oxidation can be prevented by introducing a reducing gas or the like into the chamber 10 after or while the pressure in the chamber 10 is reduced and forming the film in a reducing gas atmosphere, the pressure in the chamber 10 can be reduced. -3 Torr or higher. FIG. 10 is a diagram showing another example of the schematic configuration of the film formation apparatus 1 according to the first embodiment. The film formation apparatus 1 shown in FIG. 10 is configured to include a gas supply system 90 for supplying a reducing gas and a dilution gas to the film formation apparatus 1 shown in FIG. 1. The gas supply system 90 includes a reducing gas supply source 91 and a dilution gas supply source 92 for supplying a dilution gas. The chamber 10 includes gas inlets 10c and 10d. The reducing gas supply source 91 supplies a reducing gas to the gas inlet 10c via a flow rate controller 93, allowing the reducing gas to be introduced into the chamber 10 from the gas inlet 10c. The dilution gas supply source 92 supplies a dilution gas to the gas inlet 10d via a flow rate controller 94, allowing the dilution gas to be introduced into the chamber 10 from the gas inlet 10d. The film forming apparatus 1 may supply a reducing gas from at least the reducing gas supply source 91 after or while reducing the pressure in the chamber 10, and introduce the reducing gas into the chamber 10 to perform the following film formation in a reducing gas atmosphere. The reducing gas may be, for example, CO gas, H gas, CH gas, C3H8 gas, or C4H 10 The gas contains at least one gas selected from the group consisting of a dilution gas, a noble gas such as Ar gas, etc. Note that a dilution gas such as Ar gas may be supplied from a dilution gas supply source 92 to the reducing gas and introduced into the chamber 10, and a gas in which the reducing gas and the noble gas are combined may be introduced into the chamber 10 to perform the following film formation.

[0024] The film forming apparatus 1 supplies a film forming material from a supply unit 30 onto the surface of a member P and melts the supplied film forming material using a heat source 40 to form a film. FIG. 2 is a diagram illustrating an overview of film formation using the film forming apparatus 1 according to the first embodiment. FIG. 2 shows a storage unit 31 and a tube 32 that constitute the supply unit 30. The storage unit 31 has an internal space for storing powdered silicon S1, and the width of the internal space gradually narrows toward the bottom. The tube 32 is connected to the bottom of the storage unit 31 and communicates with the internal space. A throttle mechanism 33 that can change the size of an opening is provided at the connection between the storage unit 31 and the tube 32. The supply unit 30 can adjust the amount of powder flowing from the storage unit 31 to the tube 32 by changing the size of the opening using the throttle mechanism 33. The storage unit 31 may also be configured to reduce pressure so that the amount of powder supplied is not affected by pressure.

[0025] The silicon S1 that has flowed into the tube 32 is supplied by free fall from the supply port 32a onto the surface of the component P. The heat source 40 irradiates the electron beam 40a onto a position on the surface of the component P that is below the supply port 32a. As a result, the silicon S1 that has fallen from the supply port 32a is heated and melted by the electron beam 40a emitted from the heat source 40, and a silicon film is formed.

[0026] The member P is configured to be movable within the upper surface of the mounting table 20 by the driving unit 23. The film forming apparatus 1 moves the holding unit 21 that holds the member P by the driving unit 23, thereby moving the location on the member P where the silicon film is to be formed, and forms the silicon film on the surface of the member P.

[0027] In this way, the film formation apparatus 1 according to the first embodiment can form a silicon film while suppressing oxidation of silicon by forming the silicon film in the reduced-pressure chamber 10. As a result, the film formation apparatus 1 can manufacture a component having a film containing silicon while suppressing oxidation of silicon.

[0028] 3 is a diagram showing an example of a result of forming a silicon film according to the embodiment. -4A silicon film formed under reduced pressure of Torr is shown as "high vacuum state." Also, in Figure 3, as a reference example, a silicon film formed by inert gas substitution is shown as "inert gas substitution." In Figure 3, the oxidized portions of the silicon film are shown in black. The oxidized portions of the silicon film were investigated by mapping oxygen atoms using energy dispersive X-ray analysis (EDX analysis). As shown in Figure 3, the silicon film formed under the "high vacuum state" has fewer black oxidized portions compared to the silicon film formed under the "inert gas substitution." In this way, the film formation apparatus 1 can form a silicon film while suppressing oxidation. This allows, for example, coating the surfaces of components inside the chamber of a semiconductor manufacturing equipment with a silicon film using the film formation apparatus 1, thereby suppressing contamination in the semiconductor manufacturing equipment.

[0029] Here, physical vapor deposition (PVD) and chemical vapor deposition (CVD) are methods for depositing a silicon film in the reduced-pressure chamber 10. PVD and CVD are vacuum processes, making them useful for depositing a film while preventing oxidation. However, PVD and CVD have difficulty depositing films with a thickness of 10 μm or more, making it difficult to deposit thick films, which are highly desired as coatings for consumable parts.

[0030] On the other hand, the film forming apparatus 1 can form a film having a thickness of several hundred microns or more without oxidizing a material that is easily oxidized, such as silicon. The member P on which the film is formed is, for example, a consumable part such as a component within a chamber of a semiconductor manufacturing device. Examples of such consumable parts include an edge ring, an upper electrode, an exhaust ring, and a deposition shield. This allows the film forming apparatus 1 according to the embodiment to form a thick silicon film on a consumable part such as a component within a chamber of a semiconductor manufacturing device.

[0031] As described above, the film formation apparatus 1 according to the first embodiment includes the chamber 10, the exhaust unit 50, the holding unit 21, the supply unit 30, and the heat source 40. The exhaust unit 50 reduces the pressure inside the chamber 10 to a predetermined vacuum level. The holding unit 21 is disposed inside the chamber 10 and holds a film-forming target member (member P). The supply unit 30 supplies a silicon-containing film formation material (silicon S1) to the surface of the film-forming target member. The heat source 40 is capable of heating at a predetermined vacuum level, melting the supplied film formation material. This allows the film formation apparatus 1 to form a film while suppressing oxidation. The film formation apparatus 1 also allows the film formation material to form a thick film.

[0032] The film formation apparatus 1 according to the first embodiment further includes a drive unit 23. The heat source 40 heats the area where the film formation material is supplied from the supply unit 30 to the surface of the film formation target member. The drive unit 23 drives the holder 21 so that the area where the film formation material is supplied moves on the surface of the film formation target member. This allows the film formation apparatus 1 to form a film while suppressing oxidation on the surface of the film formation target member.

[0033] The exhaust unit 50 exhausts the inside of the chamber 10. -6 Torr over 10 -2 Torr or less, more preferably 10 -5 Torr over 10 -3 The pressure in the chamber 10 is reduced to less than Torr. This allows the film formation apparatus 1 to form a film while suppressing oxidation. Furthermore, after or while the pressure in the chamber 10 is reduced, a reducing gas or the like is introduced into the chamber 10 through the gas inlets 10c and 10d, and the film formation material is melted and formed in an atmosphere of the reducing gas, thereby forming a silicon film while suppressing oxidation of the silicon.

[0034] The heat source 40 outputs an electron beam or a laser to melt the film forming material. -6 Torr over 10 -2 Even in a vacuum state of less than Torr, the film-forming material can be melted and formed into a film on the target member.

[0035] The film forming material is silicon, which allows the film forming apparatus 1 to form a silicon film that is highly resistant to plasma on the surface of the film forming target member.

[0036] Furthermore, supply unit 30 supplies the powdered film forming material. Supply unit 30 is disposed above holding unit 21, stores the powdered film forming material in storage unit 31 formed to gradually narrow downward, and supplies the film forming material from supply port 32a disposed below storage unit 31 and communicating with storage unit 31. This allows film forming apparatus 1 to form a film of the film forming material while suppressing oxidation on the surface of the film forming target member, even when using a powdered film forming material.

[0037] [Second embodiment] Next, a second embodiment will be described. Fig. 4 is a diagram showing an example of a schematic configuration of a film formation apparatus 1 according to the second embodiment. The film formation apparatus 1 according to the second embodiment has a configuration that is partially similar to that of the film formation apparatus 1 according to the first embodiment shown in Fig. 1, so the same parts are given the same reference numerals and their explanations are omitted, and the following mainly describes the different parts. The film formation apparatus 1 according to the second embodiment has a supply unit 60 that supplies a film formation material.

[0038] The film forming apparatus 1 according to the second embodiment has a plurality of robot arms as the supply unit 60. In the example of FIG. 4, two robot arms 61a and 61b are provided in the chamber 10 as the supply unit 60. In this embodiment, the film forming material is formed in a rod shape. The supply unit 60 supplies the rod-shaped film forming material. For example, the robot arms 61a and 61b hold rod-shaped silicon and bring the rod-shaped silicon into contact with the surface of the member P.

[0039] The heat source 40 is disposed so that the emitted electron beam 40a strikes a location on the surface of the member P where the rod-shaped film formation material is supplied from the supply unit 60. For example, the heat source 40 is disposed so that the electron beam 40a strikes a contact location where the rod-shaped silicon comes into contact with the surface of the member P, and irradiates the contact location with the electron beam 40a.

[0040] The supply unit 60 may bring the rod-shaped silicon into contact with the surface of the component P, or may supply the silicon so that it is not in contact with the surface of the component P but is positioned near the surface of the component P. When the silicon is not in contact with the surface of the component P, the electron beam 40a may be applied to the tip of the rod-shaped silicon, causing the melted silicon to fall onto the component P and form a film.

[0041] When a silicon film is formed on a target member P by the film forming apparatus 1 according to the second embodiment, the member P is transported into the chamber 10 through the opening 10a and placed on the holder 21. The film forming apparatus 1 holds the placed member P on the holder 21. The film forming apparatus 1 closes the gate valve 10b, drives the exhaust unit 50, and reduces the pressure inside the chamber 10 to a predetermined vacuum level. For example, the film forming apparatus 1 reduces the pressure inside the chamber 10 by 10. -6 Torr over 10 -2 Torr or less, more preferably 10 -5 Torr over 10 -3 The pressure in the chamber 10 is reduced to less than Torr. If oxidation can be prevented by introducing a reducing gas or the like into the chamber 10 after or while the pressure in the chamber 10 is reduced and forming the film in a reducing gas atmosphere, the pressure in the chamber 10 can be reduced. -3 Torr or higher. FIG. 11 is a diagram showing another example of the schematic configuration of the film formation apparatus 1 according to the second embodiment. The film formation apparatus 1 shown in FIG. 11 is configured such that a gas supply system 90 having the same configuration as that shown in FIG. 10 is provided in the film formation apparatus 1 shown in FIG. 4. The reducing gas supply source 91 is configured to supply a reducing gas to the gas inlet 10c via a flow rate controller 93, and to introduce the reducing gas into the chamber 10 from the gas inlet 10c. The dilution gas supply source 92 is configured to supply a dilution gas to the gas inlet 10d via a flow rate controller 94, and to introduce the dilution gas into the chamber 10 from the gas inlet 10d. The film formation apparatus 1 may supply a reducing gas from at least the reducing gas supply source 91 and introduce it into the chamber 10 after or while the pressure inside the chamber 10 is reduced, and perform the following film formation under a reducing gas atmosphere. The reducing gas may be, for example, CO gas, H gas, CH gas, C3H8 gas, or C4H 10The gas contains at least one gas selected from the group consisting of a dilution gas, a noble gas such as Ar gas, etc. Note that a dilution gas such as Ar gas may be supplied from a dilution gas supply source 92 to the reducing gas and introduced into the chamber 10, and a gas such as a combination of the reducing gas and the noble gas may be introduced into the chamber 10 to perform the following film formation.

[0042] The film forming apparatus 1 supplies a film forming material from a supply unit 60 to the surface of a member P and melts the supplied film forming material using a heat source 40 to form a film. FIG. 5 is a diagram illustrating an overview of film formation using the film forming apparatus 1 according to the second embodiment. FIG. 5 shows two robot arms 61a and 61b constituting the supply unit 60. The robot arms 61a and 61b hold rod-shaped silicon rods S2 and bring the silicon rods S2 into contact with the surface of the member P. The robot arms 61a and 61b alternately bring the silicon rods S2 into contact with the surface of the member P to ensure an uninterrupted supply of silicon. For example, one of the robot arms 61a and 61b supplies silicon by bringing the silicon rods S2 into contact with the surface of the member P. Then, when the length of the silicon rods S2 supplied by one robot arm falls below a predetermined length, the other robot arm brings the silicon rods S2 into contact with the surface of the member P to supply silicon. One robot arm replaces the silicon rods S2 that have fallen below the predetermined length with new silicon rods S2. The length of the silicon rod S2 is detected, for example, from the position of the tip of a robot arm that holds the silicon rod S2. In the film formation apparatus 1 according to the second embodiment, a plurality of silicon rods S2 are placed in advance in the chamber 10 for replacement.

[0043] The silicon rods S2 are supplied to the surface of the member P by the robot arms 61a and 61b. The heat source 40 irradiates the electron beam 40a onto the position where the silicon rods S2 come into contact with the surface of the member P. As a result, the silicon rods S2 are heated and melted by the electron beam 40a emitted from the heat source 40, and a silicon film is formed.

[0044] The member P is configured to be movable within the upper surface of the mounting table 20 by the driving unit 23. The film forming apparatus 1 moves the holding unit 21 that holds the member P by the driving unit 23, thereby moving the location on the member P where the silicon film is to be formed, and forms the silicon film on the surface of the member P.

[0045] In this way, the film formation apparatus 1 according to the second embodiment can form a silicon film while suppressing oxidation of silicon by forming the silicon film in the depressurized chamber 10. Furthermore, after or while the pressure inside the chamber 10 is reduced, a reducing gas or the like is introduced into the chamber 10 through the gas inlets 10c and 10d, and the film formation material is melted and formed in the reducing gas atmosphere, thereby forming a silicon film while suppressing oxidation of silicon.

[0046] As described above, the supply unit 60 supplies the rod-shaped film formation material (silicon rods S2). The supply unit 60 supplies the film formation material from one or more directions. The supply unit 60 uses multiple robot arms 61a, 61b to hold and supply the rod-shaped film formation material. This allows the film formation apparatus 1 to form a film of the film formation material while suppressing oxidation on the surface of the film formation target member, even when using rod-shaped film formation material.

[0047] [Third embodiment] Next, a third embodiment will be described. Fig. 6 is a diagram showing an example of a schematic configuration of a film formation apparatus 1 according to the third embodiment. The film formation apparatus 1 according to the third embodiment has a configuration that is partially similar to that of the film formation apparatus 1 according to the first and second embodiments shown in Figs. 1 and 4, and therefore the same parts are denoted by the same reference numerals and their explanations are omitted, and the following mainly describes the different parts. The film formation apparatus 1 according to the second embodiment has a supply unit 70 that supplies a film formation material.

[0048] The supply unit 70 is provided with a cartridge 71 that contains a plurality of rod-shaped film forming materials. A straight pipe 72 is connected to the cartridge 71. The pipe 72 is made of, for example, quartz. The pipe 72 communicates with the cartridge 71, and its lower end serves as a supply port 72a. The cartridge 71 contains rod-shaped silicon. The rod-shaped silicon contained in the cartridge 71 is supplied to the pipe 72 sequentially.

[0049] The heat source 40 is disposed so that the emitted electron beam 40a strikes a portion of the surface of the member P where the rod-shaped film forming material is supplied from the supply portion 70.

[0050] When a silicon film is formed on a target member P by the film forming apparatus 1 according to the third embodiment, the member P is transported into the chamber 10 through the opening 10a and placed on the holder 21. The film forming apparatus 1 holds the placed member P on the holder 21. The film forming apparatus 1 closes the gate valve 10b, drives the exhaust unit 50, and reduces the pressure inside the chamber 10 to a predetermined vacuum level. For example, the film forming apparatus 1 reduces the pressure inside the chamber 10 by 10. -6 Torr over 10 -2 Torr or less, more preferably 10 -5 Torr over 10 -3 The pressure in the chamber 10 is reduced to less than Torr. If oxidation can be prevented by introducing a reducing gas or the like into the chamber 10 after or while the pressure in the chamber 10 is reduced and forming the film in a reducing gas atmosphere, the pressure in the chamber 10 can be reduced. -3Torr or higher. FIG. 12 is a diagram showing another example of the schematic configuration of the film formation apparatus 1 according to the third embodiment. The film formation apparatus 1 shown in FIG. 12 is configured such that a gas supply system 90 having the same configuration as that shown in FIG. 10 is provided in the film formation apparatus 1 shown in FIG. 6. The reducing gas supply source 91 is configured to supply a reducing gas to the gas inlet 10c via a flow rate controller 93, and to introduce the reducing gas into the chamber 10 from the gas inlet 10c. The dilution gas supply source 92 is configured to supply a dilution gas to the gas inlet 10d via a flow rate controller 94, and to introduce the dilution gas into the chamber 10 from the gas inlet 10d. The film formation apparatus 1 may supply a reducing gas from at least the reducing gas supply source 91 and introduce it into the chamber 10 after or while the pressure inside the chamber 10 is reduced, and perform the following film formation under a reducing gas atmosphere. The reducing gas may be, for example, CO gas, H gas, CH gas, C3H8 gas, or C4H 10 The gas contains at least one gas selected from the group consisting of a dilution gas, a noble gas such as Ar gas, etc. Note that a dilution gas such as Ar gas may be supplied from a dilution gas supply source 92 to the reducing gas and introduced into the chamber 10, and a gas such as a combination of the reducing gas and the noble gas may be introduced into the chamber 10 to perform the following film formation.

[0051] The film forming apparatus 1 supplies a film forming material from a supply unit 70 to the surface of a member P and melts the supplied film forming material using a heat source 40 to form a film. FIG. 7 is a diagram illustrating an overview of film formation using the film forming apparatus 1 according to the third embodiment. FIG. 7 shows a cartridge 71 constituting the supply unit 70. The cartridge 71 contains a plurality of rod-shaped silicon rods S2. A straight tube 72 is connected to the cartridge 71. The silicon rods S2 are sequentially and continuously supplied from the cartridge 71 to the tube 72. A coil 73 is disposed around the outer periphery of the tube 72 at its midpoint on the way to the supply port 72a. High-frequency power is supplied to the coil 73 from a high-frequency power source (not shown) when the ends of the silicon rods S2 pass through the coil 73. The ends of the continuously supplied silicon rods S2 are heated and melted by high-frequency induction due to the high-frequency power flowing through the coil 73, and the ends of adjacent silicon rods S2 are connected to each other. That is, the individual silicon rods S2 are connected within the tube 72. The connected silicon rods S2 are output from the supply port 72a. The supply unit 70 is provided with a pair of conveying rollers 74 at the tip of the supply port 72a. The pair of conveying rollers 74 sandwich the silicon rods S2 therebetween, and the rotation thereof can be controlled by a motor (not shown). The supply unit 70 can adjust the supply amount of silicon rods S2 by changing the rotation speed of the conveying rollers 74.

[0052] The silicon rods S2 sent out by the conveying rollers 74 are supplied to the surface of the member P. The heat source 40 irradiates the electron beam 40a onto the position where the silicon rods S2 contact the surface of the member P. As a result, the silicon rods S2 are heated and melted by the electron beam 40a emitted from the heat source 40, and a silicon film is formed.

[0053] The member P is configured to be movable within the upper surface of the mounting table 20 by the driving unit 23. The film forming apparatus 1 moves the holding unit 21 that holds the member P by the driving unit 23, thereby moving the location on the member P where the silicon film is to be formed, and forms the silicon film on the surface of the member P.

[0054] In this way, the film formation apparatus 1 according to the third embodiment can form a silicon film while suppressing oxidation of silicon by forming the silicon film in the depressurized chamber 10. Furthermore, after or while the pressure inside the chamber 10 is reduced, a reducing gas or the like is introduced into the chamber 10 through the gas inlets 10c and 10d, and the film formation material is melted and formed in the reducing gas atmosphere, thereby forming a silicon film while suppressing oxidation of silicon.

[0055] As described above, the supply unit 70 supplies the rod-shaped film formation material (silicon rods S2). The supply unit 70 supplies the film formation material from one or more directions. The supply unit 70 supplies the film formation material using rollers (conveyor rollers 74). This allows the film formation apparatus 1 to form a film of the film formation material while suppressing oxidation on the surface of the film formation target member, even when using rod-shaped film formation material.

[0056] Furthermore, the supply unit 70 sequentially supplies a plurality of rod-shaped film forming materials to the pipe 72, heats the ends of each film forming material using a heating mechanism provided in the pipe 72, and supplies the film forming materials after joining the ends of each film forming material. This allows the film forming apparatus 1 to stably supply the film forming material without interruption even when the film forming material is supplied in rod form.

[0057] [Fourth embodiment] Next, a fourth embodiment will be described. Fig. 8 is a diagram showing an example of a schematic configuration of a film formation apparatus 1 according to the fourth embodiment. The film formation apparatus 1 according to the fourth embodiment has a configuration that is partially similar to that of the film formation apparatuses 1 according to the first to third embodiments shown in Figs. 1, 4, and 6, and therefore the same parts are denoted by the same reference numerals and their descriptions are omitted, and the following mainly describes the different parts. The film formation apparatus 1 according to the fourth embodiment has a supply unit 80 that supplies a film formation material.

[0058] The supply unit 80 is disposed above the mounting table 20. The supply unit 80 is airtightly provided on the ceiling of the chamber 10. The supply unit 80 is provided with a heating container 81 that contains a film-forming material. The heating container 81 contains silicon in a liquid state as the film-forming material by heating it. A linear nozzle 82 is connected to the bottom of the heating container 81. The nozzle 82 is made of, for example, quartz. The nozzle 82 is connected to the heating container 81, and its lower end serves as a supply port 82a. The liquid silicon contained in the heating container 81 is cooled in the nozzle 82 and solidifies into a rod-like shape, and is supplied into the chamber 10 through the nozzle 82.

[0059] The heat source 40 is disposed so that the emitted electron beam 40a strikes a portion of the surface of the member P where the rod-shaped film forming material is supplied from the supply portion 80.

[0060] When a silicon film is formed on a target member P by the film forming apparatus 1 according to the fourth embodiment, the member P is transported into the chamber 10 through the opening 10a and placed on the holder 21. The film forming apparatus 1 holds the placed member P on the holder 21. The film forming apparatus 1 closes the gate valve 10b, drives the exhaust unit 50, and reduces the pressure inside the chamber 10 to a predetermined vacuum level. For example, the film forming apparatus 1 reduces the pressure inside the chamber 10 by 10. -6 Torr over 10 -2 Torr or less, more preferably 10 -5 Torr over 10 -3 The pressure in the chamber 10 is reduced to less than Torr. If oxidation can be prevented by introducing a reducing gas or the like into the chamber 10 after or while the pressure in the chamber 10 is reduced and forming the film in a reducing gas atmosphere, the pressure in the chamber 10 can be reduced. -3Torr or higher. FIG. 13 is a diagram showing another example of the schematic configuration of the film forming apparatus 1 according to the fourth embodiment. The film forming apparatus 1 shown in FIG. 13 is configured such that a gas supply system 90 having the same configuration as that shown in FIG. 10 is provided in the film forming apparatus 1 shown in FIG. 8. The reducing gas supply source 91 is configured to supply a reducing gas to the gas inlet 10c via a flow rate controller 93, and to introduce the reducing gas into the chamber 10 from the gas inlet 10c. The dilution gas supply source 92 is configured to supply a dilution gas to the gas inlet 10d via a flow rate controller 94, and to introduce the dilution gas into the chamber 10 from the gas inlet 10d. The film forming apparatus 1 may supply a reducing gas from at least the reducing gas supply source 91 and introduce it into the chamber 10 after or while the pressure inside the chamber 10 is reduced, and perform the following film formation under a reducing gas atmosphere. The reducing gas may be, for example, CO gas, H gas, CH gas, C3H8 gas, or C4H 10 The gas contains at least one gas selected from the group consisting of a dilution gas, a noble gas such as Ar gas, etc. Note that a dilution gas such as Ar gas may be supplied from a dilution gas supply source 92 to the reducing gas and introduced into the chamber 10, and a gas in which the reducing gas and the noble gas are combined may be introduced into the chamber 10 to perform the following film formation.

[0061] The film forming apparatus 1 supplies a film forming material from a supply unit 80 onto the surface of a member P, and a heat source 40 melts the supplied film forming material to form a film. FIG. 9 is a diagram illustrating an overview of film formation by the film forming apparatus 1 according to the fourth embodiment. FIG. 9 shows a heating container 81 and a nozzle 82 that constitute the supply unit 80. The heating container 81 contains silicon S3, and a coil 83 is provided along the periphery of the container. High-frequency power is supplied to the coil 83 from a high-frequency power source (not shown). The heating container 81 heats the silicon S3 by high-frequency induction caused by the high-frequency power flowing through the coil 83, and contains the silicon S3 in a liquid state.

[0062] A nozzle 82 is connected to the heating container 81. A water-cooled cooling pipe 84, for example, is arranged around the outer periphery of the nozzle 82 at an intermediate portion on the way to the supply port 82a, thereby cooling the intermediate portion. Liquid silicon S3 flowing into the nozzle 82 is cooled and solidified at the intermediate portion, and is output in a rod-like shape from the supply port 82a. The supply unit 80 is provided with a pair of conveying rollers 85 at the end of the supply port 82a. The pair of conveying rollers 85 sandwich rod-shaped silicon S3 therebetween, and the rotation of the pair of conveying rollers 85 can be controlled by a motor (not shown). The supply unit 80 can adjust the amount of silicon S3 supplied by changing the rotation speed of the conveying rollers 85.

[0063] The silicon S3 sent out by the transport roller 85 is supplied to the surface of the member P. The heat source 40 irradiates the electron beam 40a to the position where the silicon S3 contacts the surface of the member P. As a result, the silicon S3 is heated and melted by the electron beam 40a emitted from the heat source 40, and a silicon film is formed.

[0064] The member P is configured to be movable within the upper surface of the mounting table 20 by the driving unit 23. The film forming apparatus 1 moves the holding unit 21 that holds the member P by the driving unit 23, thereby moving the location on the member P where the silicon film is to be formed, and forms the silicon film on the surface of the member P.

[0065] In this way, the film formation apparatus 1 according to the fourth embodiment can form a silicon film while suppressing oxidation of silicon by forming the silicon film in the depressurized chamber 10. Furthermore, after or while the pressure inside the chamber 10 is reduced, a reducing gas or the like is introduced into the chamber 10 through the gas inlets 10c and 10d, and the film formation material is melted and formed in the reducing gas atmosphere, thereby forming a silicon film while suppressing oxidation of silicon.

[0066] As described above, the supply unit 80 melts the film forming material in the heating container 81, and then flows the melted film forming material into a rod shape and supplies it through the nozzle 82. This allows the film forming apparatus 1 to stably supply the film forming material without interruption.

[0067] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims.

[0068] For example, in each of the above embodiments, the case where the driving unit 23 drives the holding unit 21 within the upper surface of the mounting table 20 to form a film has been described as an example. However, the disclosed technology is not limited to this. The film forming apparatus 1 may form a film while the driving unit 23 drives the supply units 30, 60, 70, 80 and the heat source 40 to move relative to the mounting table 20.

[0069] In the second embodiment, the two robot arms 61a and 61b each grip and supply a rod-shaped film forming material. However, the disclosed technology is not limited to this. The film forming apparatus 1 may also have three robot arms each grip and supply a rod-shaped film forming material.

[0070] Furthermore, in the film forming apparatus 1 of the above-described embodiment, sufficient preheating may be performed, and the temperature drop after film formation may also be controlled. For example, the film forming apparatus 1 may be provided with a heater in the region of the holding unit 21 that contacts the member P, and the temperature drop after film formation may be controlled by the heater. For example, the temperature drop rate at which cracks do not occur in the formed silicon film is determined by experiment or the like, and the temperature is controlled to be lowered at the determined temperature drop rate. This makes it possible to prevent cracks in the formed silicon film.

[0071] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0072] 1 Film deposition equipment 10 Chambers 10c, 10d Gas inlet 20 Mounting table 21 Holding part 23 Drive unit 30 Supply section 40 Heat source 50 Exhaust section 60 Supply section 61a, 61b Robot arm 70 Supply section 71 Cartridge 72 tube 73 Coil 74 Conveyor roller 80 Supply section 81 Heating container 82 nozzles 85 Conveyor roller 84 Water cooling pipe 83 Coil 90 Gas supply system 91 Reducing gas supply source 92 Dilution gas supply source P member S1, S3 silicon S2 Silicone rod

Claims

1. Chamber and an exhaust unit that reduces the pressure inside the chamber to a vacuum level of 10 −6 Torr or more but less than 10 −2 Torr; a holding part that is disposed in the chamber and holds a film-forming target member; a supply unit that supplies a coating material containing silicon to the surface of the film-forming target member; a heat source capable of heating at the vacuum level and melting the supplied coating film-forming material; A film forming apparatus for coating consumable parts, comprising:

2. the heat source heats a portion where the coating material is supplied from the supply unit to the surface of the film-forming target member; The apparatus further includes a drive unit that drives the holding unit or the supply unit and the heat source so that the location moves on the surface of the film-forming target member. The film-forming device for coating consumable parts according to claim 1.

3. The exhaust unit exhausts the inside of the chamber by 10 －５ Torr or more 10 －３ Reduce pressure to less than Torr The film-forming device for coating consumable parts according to claim 1 or 2.

4. The heat source outputs an electron beam or a laser to melt the coating material.

4. The film-forming device for coating consumable parts according to claim 1.

5. The supply unit supplies the coating material in powder form.

5. The film-forming device for coating consumable parts according to claim 1.

6. The supply unit is disposed above the holding unit, stores the powder coating material in a storage unit whose width gradually narrows downward, and supplies the coating material from a supply port disposed below the storage unit and communicating with the storage unit. The film-forming device for coating consumable parts according to claim 5.

7. The supply unit supplies the film-forming material for coating in a rod shape.

5. The film-forming device for coating consumable parts according to claim 1.

8. The supply unit supplies the coating material from one or more directions. The film-forming device for coating consumable parts according to claim 7.

9. The supply unit uses a plurality of robot arms to hold and supply the rod-shaped coating material. The film-forming device for coating consumable parts according to claim 7 or 8.

10. The supply unit supplies the coating material by a roller. The film-forming device for coating consumable parts according to claim 7 or 8.

11. The supply unit sequentially supplies a plurality of rod-shaped coating materials to a pipe, heats an end of each coating material by a heating mechanism provided in the pipe, and supplies the coating materials by joining the ends of each coating material.

11. The film-forming device for coating consumable parts according to claim 7, 8 or 10.

12. The supply unit melts the coating material in a heating container, and the melted coating material flows into a nozzle to form a rod-like shape and supply it.

11. The film-forming device for coating consumable parts according to claim 7, 8 or 10.

13. a gas inlet for introducing a reducing gas into the chamber; The film-forming device for coating consumable parts according to any one of claims 1 to 12.

14. a step of holding a film-forming target member on a holding part disposed in a chamber; reducing the pressure inside the chamber to a vacuum level of 10 −6 Torr or more but less than 10 −2 Torr; supplying a coating material containing silicon from a supply unit onto the surface of the film-forming target member; a step of melting the supplied coating film-forming material by a heat source capable of heating at the vacuum level; A method for manufacturing a consumable part having a film containing silicon, comprising:

15. The melting step includes heating a portion of the surface of the film-forming target member to which the film-forming material is supplied by the heat source, The method further includes a step of driving the holding unit, or the supply unit and the heat source, so that the location moves on the surface of the film formation target member. A method for producing a consumable part having a film containing silicon according to claim 14.

16. The step of reducing the pressure in the chamber is －５ Torr or more 10 －３ Reduce pressure to less than Torr A method for producing a consumable part having a silicon-containing film according to claim 14 or 15.

17. The heat source outputs an electron beam or a laser to melt the coating material. A method for producing a consumable part having a silicon-containing film according to any one of claims 14 to 16.

18. The method further comprises the step of introducing a reducing gas into the chamber through the gas inlet after or while reducing the pressure inside the chamber; The melting step melts the supplied coating material under a reducing gas atmosphere. A method for producing a consumable part having a silicon-containing film according to any one of claims 14 to 17.

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