Display device having touch sensor

Abstract

To reduce the number of components of a display device having a touch sensor, and to simplify a process.SOLUTION: A display device has: a transparent resin board in which first to fourth transparent resin layers are laminated; a first sensor electrode between the first transparent resin layer and the second transparent resin layer; a second sensor electrode between the second transparent resin layer and the third transparent resin layer; a shield electrode including a first opening between the third transparent resin layer and the fourth transparent resin layer; a first insulating layer on the fourth transparent resin layer, a second insulating layer on the first insulating layer, a third insulating layer on the second insulating layer, and a sealing layer for covering the third insulating layer; and a drive circuit connected to a connection terminal between the first insulating layer and the second insulating layer. The first sensor electrode and the connection terminal are connected by a first contact hole penetrating the first insulating layer, the fourth transparent resin layer, the third transparent resin layer, and the second transparent resin layer. The first contact hole is disposed inside the first opening, and is covered with the third insulating layer and the sealing layer. The connection terminal is disposed in an area exposed from the third insulating layer and the sealing layer, and the shield electrode extends to an area overlapping with the drive circuit.SELECTED DRAWING: Figure 40

Description

[Technical Field]

[0001] One embodiment of the present invention is a touch sensor that detects biometric information such as fingerprints and palm prints. This relates to a display device equipped with a sensor that can output a signal. [Background technology]

[0002] To prevent fraudulent use and protect personal information, we have implemented a system that identifies users through biometric authentication. Development of sub-devices is underway. For example, display panels with pixels formed by organic light-emitting diodes are being developed. A display device with a fingerprint authentication sensor attached to the back of the panel has been disclosed (Patent Document 1 In addition, a touch sensor is installed on the display panel, which can recognize fingerprints and touch pressure. A possible display device has been disclosed (see Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-085114 [Patent Document 2] Japanese Patent Application Publication No. 2018-005910 Summary of the Invention [Problem to be solved by the invention]

[0004] Portable electronic devices whose display screens occupy the entire front of the device are designed to enhance functionality. There is a market need to enable fingerprint authentication on any surface. In contrast to the conventional display devices, the display device disclosed in Patent Document 1 has a small fingerprint authentication sensor. Because it is installed as a separate component, it cannot detect fingerprints across the entire screen. There is a problem: if fingerprint authentication were to be enabled on the entire screen, the device would have to be made larger. There is a problem that...

[0005] On the other hand, the display device disclosed in Patent Document 2 includes a circuit for displaying images and a circuit for driving a fingerprint sensor. Since the circuits are completely separated, the number of connection terminals for signal input and output is significantly increased. The dimensions of the display panel are determined by the electronic device to be mounted, and the connection terminals Therefore, in addition to the connection terminal for inputting the video signal, If a terminal for outputting a signal from the fingerprint sensor is added, the pitch of the connection terminals must be narrowed. However, when the pitch of the terminal electrodes becomes narrower, the connection using the conventional anisotropic conductive film (ACF) becomes difficult. This method makes it difficult to connect to the flexible wiring board, resulting in a decrease in yield. do. [Means for solving the problem]

[0006] The display device with touch and fingerprint detection functions according to an embodiment of the present invention receives a plurality of data signals. a display unit including a line and at least one first sensor electrode; and a terminal including a first terminal and a second terminal. The display unit is disposed between the terminal unit and the display unit, and has one input terminal and a plurality of output terminals. and a switching circuit that distributes an input signal input to the input terminal to a plurality of output terminals, the input side is connected to the first terminal, and a plurality of data signal lines are connected to a plurality of output terminals; The sensor has a structure in which one first sensor electrode is connected to the second terminal.

[0007] A display device with a touch and fingerprint sensor according to an embodiment of the present invention includes a first direction extending a first sensor electrode, a second sensor electrode extending in a second direction intersecting the first direction, and a second sensor electrode extending in the second direction a scanning signal line extending to the pixel, a pixel overlapping the second sensor electrode, and a transistor provided in the pixel. The gate electrode of the transistor is connected to a scanning signal line, and the scanning signal line is connected to a second cell. It is connected to the sensor electrode. [Effects of the Invention]

[0008] According to one embodiment of the present invention, by having a switching circuit connected to a plurality of data signal lines, The first sensor electrodes can be arranged at high density, and even in this case, the number of connection terminals does not increase. As a result, poor connection between the terminal and the flexible circuit board can be prevented. According to one embodiment of the present invention, the scanning signal line is connected to the second sensor electrode. By connecting the scanning signal line, the scanning signal line can be used as an auxiliary electrode for the second sensor electrode. . [Brief explanation of the drawings]

[0009] [Figure 1] 1 shows an exploded view of a display device with a touch and fingerprint sensor according to an embodiment of the present invention; [Figure 2] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a drive circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 3A] 1 shows a timing chart illustrating the operation of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 3B] 1 shows a timing chart illustrating the operation of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 4] 1 shows an example of an equivalent circuit of a pixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 5] 3 shows the configuration of a switching circuit, a terminal unit, and a second driving circuit of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 6]3 shows the configuration of a switching circuit, a terminal unit, and a second driving circuit of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 7] 3 shows the configuration of a switching circuit, a terminal unit, and a second driving circuit of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 8] 3 shows the configuration of a switching circuit, a terminal unit, and a second driving circuit of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 9] 2 shows an arrangement of pixels and an arrangement of first and second sensor electrodes of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 10] 1 shows the pixel arrangement and the arrangement of the first and second sensor electrodes of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and shows an example in which one first sensor electrode is provided for every two pixel columns, and one second sensor electrode is provided for every two pixel rows. [Figure 11A] 1 shows a plan view of a first sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention; [Figure 11B] 2 shows a cross-sectional view corresponding to line A1-A2 shown in the plan view of a first sensor electrode of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. FIG. [Figure 12A] 1 shows a plan view of a first sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention; [Figure 12B] 2 shows a cross-sectional view corresponding to line B1-B2 shown in the plan view of a first sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. FIG. [Figure 13A] 1 shows a plan view of a second sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention; [Figure 13B] 10 shows a cross-sectional view corresponding to line C1-C2 shown in the plan view of the second sensor electrode of the display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 14A] 1 shows a plan view of a second sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention; [Figure 14B]10 shows a cross-sectional view corresponding to line C3-C4 shown in the plan view of the second sensor electrode of the display device with a touch and fingerprint sensor according to one embodiment of the present invention. FIG. [Figure 14C] 10 shows a cross-sectional view corresponding to line C5-C6 shown in the plan view of the second sensor electrode of the display device with a touch and fingerprint sensor according to one embodiment of the present invention. FIG. [Figure 15] 1 shows an example of a planar layout of a drive transistor, a selection transistor, a capacitance element, and an EL element that constitute a subpixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 16A] 16 shows a configuration of a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and is a cross-sectional view taken along line D1-D2 in FIG. 15. [Figure 16B] 16 shows a configuration of a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and is a cross-sectional view corresponding to the line D3-D4 shown in FIG. 15. [Figure 17] 1 shows an example of a planar layout of a drive transistor, a selection transistor, a capacitance element, and an EL element that constitute a subpixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 18] 1 shows an example of a planar layout of a drive transistor, a selection transistor, a capacitance element, and an EL element that constitute a subpixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 19A] 19 shows a configuration of a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and is a cross-sectional view corresponding to the line D5-D6 shown in FIG. 18. [Figure 19B] 19 shows a configuration of a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and is a cross-sectional view corresponding to the line D7-D8 shown in FIG. 18. [Figure 20] 1 shows an example of a planar layout of a drive transistor, a selection transistor, a capacitance element, and an EL element that constitute a subpixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 21A]21 shows a configuration of a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and is a cross-sectional view corresponding to the line D9-D10 shown in FIG. 20. [Figure 21B] 21 shows a configuration of a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and is a cross-sectional view corresponding to the line D11-D12 shown in FIG. 20. [Figure 22A] 1 shows a configuration in which a light-shielding layer extends below a terminal portion as an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 22B] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, a configuration in which a first insulating layer extends below a terminal portion is shown. [Figure 23A] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, a configuration is shown in which a light-shielding layer extends below the terminal portion and a second insulating layer extends above the lead-out wiring. [Figure 23B] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, a configuration is shown in which a first insulating layer extends below the lead-out wiring and a second insulating layer extends above the lead-out wiring. [Figure 24A] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, a configuration is shown in which a light-shielding layer, a first insulating layer, and a second insulating layer extend below the lead-out wiring and terminal portion. [Figure 24B] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, a configuration in which a first insulating layer and a second insulating layer extend below a terminal portion is shown. [Figure 25A] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, a light-shielding layer is provided below the terminal portion, and the lead-out wiring is connected to the first sensor electrode by a plurality of contact holes. [Figure 25B]As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, a configuration in which the lead-out wiring is connected to the first sensor electrode through a plurality of contact holes is shown. [Figure 26] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a flexible circuit board of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 27] 1 shows a wiring structure of a flexible circuit board of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 28] 1 shows a connection structure between a terminal portion of a display device with a touch and fingerprint sensor and a flexible circuit board according to an embodiment of the present invention. [Figure 29] 1 shows a connection structure between a terminal portion of a display device with a touch and fingerprint sensor and a flexible circuit board according to an embodiment of the present invention. [Figure 30] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a flexible circuit board of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 31] 1 shows a wiring structure of a flexible circuit board of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 32] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a drive circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 33] 1 illustrates an example of an output switching circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 34] 1 illustrates an example of an output switching circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 35] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a drive circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 36A] 1 shows a plan view of a second sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention; [Figure 36B]10 shows a structure of a second sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, and is a cross-sectional view corresponding to line C7-C8 shown in the plan view. [Figure 36C] 10 shows a structure of a second sensor electrode of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, and is a cross-sectional view corresponding to line C9-C10 shown in the plan view. [Figure 37] 1 shows a timing chart illustrating the operation of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 38] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a drive circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 39] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a drive circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 40] 1 shows a connection structure between a terminal portion and a drive circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 41] 1 shows an example of an equivalent circuit of a pixel provided in a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 42] 1 shows a timing chart illustrating a method for driving pixels of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 43] 1 shows an example of an equivalent circuit of a pixel provided in a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 44] 1 shows a timing chart illustrating a method for driving pixels of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 45] 1 shows a connection structure between a terminal portion of a display device with a touch and fingerprint sensor and a flexible circuit board according to an embodiment of the present invention. [Figure 46] 1 shows the configurations of a display unit, a touch and fingerprint sensor unit, a switching circuit, and a drive circuit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 47]1 shows the layout of data signal lines and common wirings provided in a display unit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 48] 1 shows an example of a planar layout of a drive transistor, a selection transistor, a capacitance element, and an EL element that constitute a subpixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 49] 1 shows a cross-sectional view of a sub-pixel of a display with touch and fingerprint sensor according to an embodiment of the present invention; [Figure 50] 1 shows a planar layout of an organic EL element provided in a subpixel of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, and a cross-sectional structure between E1 and E2 and between E3 and E4 shown in the figure. [Figure 51] 1 shows an example of an equivalent circuit of a pixel provided in a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 52] 1 shows an example of a planar layout of a drive transistor, a selection transistor, a capacitance element, and an EL element that constitute a subpixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 53] 1 shows a cross-sectional view of a sub-pixel of a display with touch and fingerprint sensor according to an embodiment of the present invention; [Figure 54] 1 shows an example of a planar layout of a drive transistor, a selection transistor, a capacitance element, and an EL element that constitute a subpixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 55] 1 shows a cross-sectional view of a sub-pixel of a display with touch and fingerprint sensor according to an embodiment of the present invention; [Figure 56] 1 is a cross-sectional view of a sub-pixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, showing a structure in which a wire grid polarizer and a light scattering layer are provided. [Figure 57] 1 is a cross-sectional view of a sub-pixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, showing a structure in which a wire grid polarizer and a light scattering layer are provided. [Figure 58]1 shows a cross-sectional structure of a wire grid polarizer provided in a display unit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 59] 1 shows a cross-sectional structure of a wire grid polarizer provided in a display unit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 60] 10 shows the relationship between a wire grid polarizer provided in a display unit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention and the polarization axis of a polarization axis rotation plate. [Figure 61] 1 shows the arrangement of a wire grid polarizer provided in a display unit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 62] 1 shows the arrangement of a wire grid polarizer provided in a display unit of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 63A] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, a connection structure between a second sensor electrode and a lead-out wiring formed in the same layer as a data signal line is shown. [Figure 63B] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, a connection structure between a second sensor electrode and a lead-out wiring formed in the same layer as a scanning signal line is shown. [Figure 64A] As an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to one embodiment of the present invention, a connection structure between the first sensor electrode and a lead-out wiring formed in the same layer as the scanning signal line is shown. [Figure 64B] 1 shows a connection structure between a second electrode of an organic EL element and a lead-out wire as an example of a connection structure between a first sensor electrode and a lead-out wire in a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 65A] 1 shows a connection structure between a data signal line and a lead-out line as a connection structure between a first sensor electrode and a lead-out line of a display device with a touch and fingerprint sensor according to one embodiment of the present invention. [Figure 65B]1 shows a connection structure between a second sensor electrode and a lead-out wiring as an example of a connection structure between a first sensor electrode and a lead-out wiring of a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 66] 1 is a cross-sectional view of a sub-pixel of a display device with a touch and fingerprint sensor according to an embodiment of the present invention, showing a structure in which a wire grid polarizer and a light scattering layer are provided. [Figure 67] 1 illustrates the layout of a wire grid polarizer in a display device with a touch and fingerprint sensor according to an embodiment of the present invention. [Figure 68] 1 shows the cross-sectional structure and operation principle of a wire grid polarizer provided in a display unit with a touch and fingerprint sensor according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present specification includes various aspects and is not to be construed as being limited to the following exemplary embodiments. In order to clarify the explanation, the drawings attached hereto may be slightly different in width, thickness, shape, etc. from the actual state. Although the state of the device may be shown schematically, it is merely an example and should not be construed as a limitation of the present invention. The present invention is not limited to the specific embodiments shown in the drawings. When an element in one drawing has the same or corresponding relationship with a specific element shown in another drawing, the same element is used. A single code (or a code with a, b, etc., added after the number written as the code) is added, and The explanation of the return may be omitted as appropriate. In addition, "first" and "second" are added to each element. The letters are convenient symbols used to distinguish each element, and unless otherwise specified, Unless otherwise specified, it has no further meaning.

[0011] As used herein, one element or region may be "over (or under)" another element or region. Unless otherwise specified, this applies when it is directly above (or directly below) another component or area. This includes not only cases where the object is located above (or below) other components or areas, but also cases where the object is located above (or below) other components or areas. There is another component between a certain member or area and above (or below) the member or area. This also includes cases where

[0012] [First embodiment] This embodiment is an example of a display device in which a display unit and a touch and fingerprint sensor unit are arranged in an overlapping manner. show.

[0013] 1-1. Configuration of display device with touch and fingerprint sensor FIG. 1 is an exploded view of a display device 100 with a touch and fingerprint sensor according to an embodiment of the present invention. The display device 100 with a touch and fingerprint sensor has a display on which a plurality of pixels 104 are arranged. a display unit 102, at least one first sensor electrode 112, and at least one second sensor The display unit 102 includes a touch and fingerprint sensor unit 110 including electrodes 114. A shield electrode 116 is disposed between the print sensor unit 110 and the shield electrode 116 .

[0014] At least one first sensor electrode 112 is arranged to extend in the Y direction, and at least At least one second sensor electrode 114 is arranged to extend in the X direction. The first sensor electrode 112 is a plurality of first sensor electrodes (hereinafter similarly designated by the reference numeral "112"). The plurality of first sensor electrodes 112 are arranged in the X direction. The sensor electrode 114 is composed of a plurality of second sensor electrodes (hereinafter similarly designated by the reference numeral "114"). The plurality of second sensor electrodes 114 are arranged in the Y direction. The second sensor electrodes 114 are arranged to intersect with each other with an insulating layer (not shown) sandwiched therebetween. .

[0015] In the area outside the display unit 102, a first drive circuit 118, a switching circuit 120 ("multiple The shield is provided with a terminal section 122. The electrode 116 electrically separates the display unit 102 from the touch and fingerprint sensor unit 110. A constant potential (for example, ground potential) is applied to the shield electrode 116.

[0016] Each of the plurality of pixels 104 includes a light-emitting element. The plurality of pixels 104 are made up of electroluminescent elements (hereinafter also referred to as "EL elements"). The EL elements provided in each of the layers are bottom-emitting elements that emit light toward the shield electrode 116 side. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 11 The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 6 are transparent. The first sensor electrode 112 and the second sensor electrode 116 are formed of a transparent conductive film. 4 and the shield electrode 116 are provided with openings in accordance with the arrangement of the plurality of pixels 104. With this configuration, the light emitted from the EL element is transmitted to the shield electrode 116 and the touch panel. and is emitted through the fingerprint sensor unit 110.

[0017] The display device 100 with touch and fingerprint sensor is configured to allow a user to touch an image displayed on the display unit 102. The touch and fingerprint sensor unit 110 is configured to be visible from the side where the touch and fingerprint sensor unit 110 is provided. The sensor unit 110 is provided so as to overlap the display unit 102, and therefore has a touch and fingerprint sensor. This allows the display device 100 to detect touches and fingerprints at any position on the display screen.

[0018] A sealing layer 124 may be provided on the display unit 102. The sealing is provided to protect the unit 102, the first driving circuit 118, and the switching circuit 120. The layer 124 may have any configuration. For example, the sealing layer 124 may be made of a silicon oxide film or a silicon nitride film. The sealing layer 124 is made of an inorganic insulating film such as a polyimide resin or an acrylic resin. Alternatively, it may be formed using a resin material such as epoxy resin.

[0019] FIG. 2 shows a display unit 102 of the display device 100 with a touch and fingerprint sensor according to this embodiment. A touch and fingerprint sensor unit 110, a first drive circuit 118, a switching circuit 120, a terminal unit 122, The second driving circuit 128 is shown. The display unit 102, the touch and fingerprint sensor unit 110, the first driving circuit The path 118 , the switching circuit 120 , and the terminal section 122 are provided on a transparent resin substrate 200 . The second drive circuit 128 is provided on the flexible circuit board 126. 8 is mounted on a flexible circuit board 126 by COF (Chip on Film).

[0020] The display unit 102 includes a plurality of pixels 104. The plurality of pixels 104 are arranged, for example, in a stripe arrangement. Arrays such as rows, delta arrays, Bayer arrays, pentile arrays, and diamond pentile arrays The display unit 102 is provided with data signal lines 108 and scanning signal lines (not shown). For a plurality of pixels 104 arranged in a first direction (column direction) and a second direction (row direction), The data signal lines 108 extend in a first direction (column direction), and the scanning signal lines intersect with the first direction. They are arranged to extend in the second direction (row direction).

[0021] The first driving circuit 118 is disposed in the area outside the display unit 102 (hereinafter also referred to as the "peripheral area"). The first driving circuit 118 is connected to a scanning signal line (not shown). The wiring 118 is disposed along one side of the display unit 102. 08 are arranged in the first direction (column direction) and are connected to the switching circuit 120.

[0022] A terminal section 122 is provided at one end of the transparent resin substrate 200, on which a plurality of connection terminals are arranged. The switching circuit 120 is disposed in the area between the display unit 102 and the terminal unit 122. The switching circuit 120 has a function of distributing one input to multiple outputs. One connection terminal provided on the substrate 101 is connected to a plurality of data signal lines 108.

[0023] The touch and fingerprint sensor unit 110 includes a plurality of first sensors extending in a first direction (column direction). The sensor element 110 includes an electrode 112 and a plurality of second sensor electrodes 114 extending in a second direction (row direction). Each of the plurality of first sensor electrodes 112 is connected to a connection terminal disposed on the terminal portion 122. The plurality of second sensor electrodes 114 are connected to a first drive circuit 118. The first sensor electrode 112 and the plurality of second sensor electrodes 114 intersect with each other with an insulating layer (not shown) interposed therebetween. It functions as a fingerprint sensor and a touch sensor.

[0024] The flexible circuit board 126 includes the first drive circuit 118, the switching circuit 120, and the first sensor. The flexible circuit board 1 includes wiring that connects the electrode 112 and the second driving circuit 128. 26 is connected to the connection terminal of the terminal portion 122 via an anisotropic conductive material. The scanning signal line driving circuit block 130 is connected to the first driving circuit 118 and receives the data signal. The line driver circuit block 132 is connected to the switching circuit 120 and the touch and fingerprint sensor detection circuit The block 134 is connected to the first sensor electrode 112 .

[0025] In the second driving circuit 128, the scanning signal line driving circuit block 130 A first driving circuit 11 outputs a scanning signal and a scanning signal for the touch and fingerprint sensor unit 110. 8, and the data signal line driving circuit block 132 The touch and fingerprint sensor detection circuit block 134 has a function of outputting a video signal. The sensing signal output from the sensor electrode 112 is amplified and converted into a digital signal as a sensor output. It has the function of generating a signal.

[0026] FIG. 2 shows a second driving circuit 128 in which multiple circuit blocks are integrated into one semiconductor chip. This section shows an example of a composite integrated circuit (composite IC) that uses such a composite integrated circuit. This reduces the number of processes compared to mounting individual IC chips, and reduces manufacturing costs. The second driving circuit 128 is not limited to this example, and each The circuit blocks may be implemented as separate integrated circuits.

[0027] 3A and 3B are timing charts of the display device with touch and fingerprint sensor 100 shown in FIG. The display device 100 with a touch and fingerprint sensor includes a first drive circuit 118. , a scanning signal line driving circuit of the display unit 102 and a scanning signal output circuit of the touch and fingerprint sensor unit 110 Therefore, the display device 100 with a touch and fingerprint sensor has a display period The driving is performed so that the sensing period and the sensing period appear alternately.

[0028] FIG. 3A shows an example in which a sensing period appears for each display period of one frame. The following shows an example in which a sensing period appears once per frame of display time. The length of the interval is arbitrary and can be set to be shorter than one frame period. Since the frequency is 60 Hz or more, even if a sensing period is provided between frames, the display unit 102 To perform touch or fingerprint sensing while displaying an image without affecting vision. can be done.

[0029] 1-2.Pixel equivalent circuit 4 shows an example of an equivalent circuit of the pixel 104. The pixel 104 includes a first sub-pixel 105r, a second sub-pixel 105r, and a third sub-pixel 105r. The first subpixel 105r includes a second subpixel 105g and a third subpixel 105b. a select transistor 138, a capacitor element 140, and an EL element 142. The second subpixel 105g and the third subpixel 105b also have the same configuration. The symbols for transistor 136 and select transistor 138 are semiconductors with two gate electrodes. The driving transistor 136 has a dual gate structure sandwiching a lower layer. The select transistor 138 has a first gate electrode 150 and a second gate electrode 151 on the upper side. The driving transistor 1 has a first gate electrode 152 on the side and a second gate electrode 153 on the upper side. 36 and the selection transistor 138 are n-channel transistors.

[0030] The second gate electrode 153 of the selection transistor 138 is connected to the scanning signal line 106a. The data signal line 108 and the drain side of the capacitor element 140 and the second drive transistor 136 The first gate electrode 150 of the driving transistor 136 is connected to the common The source side is the common electrode 144a, and the drain side is the cathode of the EL element 142. The capacitance element 140 has one terminal (first terminal) connected to the selection transistor 138. The drain side of the EL element 142 and the other terminal are connected to the common wiring 144b. is connected to the power supply line 154.

[0031] In FIG. 4, the common electrode 144a and the common wiring 144b are distinguished in the equivalent circuit. Although shown, both are at the same potential and are fixed at a constant potential (e.g., ground potential). The power supply line 154 is connected to the common electrode 144a and the common wiring 144b. A power supply potential VDD higher than the potential of 44b is applied. At this time, a current flows through the EL element 142 from the power supply line 154 to the common electrode 144a. The current flowing at this time is also the drain current of the drive transistor 136, The amount of current (which is also the light emission intensity of the EL element) is controlled by the potential of the second gate electrode 151. It is possible.

[0032] The equivalent circuit of the pixel shown in FIG. 4 is an example, and the touch and fingerprint sensor according to this embodiment The display device 100 with a pixel circuit may also be applied with pixel circuits having other circuit configurations. For example, a pixel circuit incorporating a circuit for correcting the threshold voltage of the driving transistor is applied. It is possible.

[0033] 1-3.Switching circuit FIG. 5 shows the switching circuit 120 of the display device 100 with a touch and fingerprint sensor according to this embodiment. (120_1 to 120_h), the terminal unit 122, and the second drive circuit 128. The paths 120 (120_1 to 120_h) and the terminal portions 122 are provided on the transparent resin substrate 200. The second drive circuit 128 is mounted on the flexible circuit board 126.

[0034] The terminal section 122 includes a first connection terminal 146a and a second connection terminal 146b. 146a is a terminal connected to the switching circuit 120 (120_1 to 120_h), and the second connection The connection terminal 146b is a terminal connected to the first sensor electrodes 112 (112_1 to 112_k). The flexible circuit board 126 has a third connection terminal 148a and a fourth connection terminal 148b. The first connection terminal 146a is connected to the third connection terminal 148a, and the second connection terminal 146b is connected to the fourth connection terminal 148b. The connection terminal 148b is connected to the connection terminal provided on the transparent resin substrate 200 side. The connection terminals provided on the cable circuit board 126 are connected by an anisotropic conductive adhesive.

[0035] The switching circuit 120 (120_1 to 120_h) includes one input terminal and three output terminals. The switching circuit 120 (120_1 to 120_h) is a third switching circuit provided between the input terminal and the output terminal. A first switching element 156a, a second switching element 156b, and a third switching element The first switching element 156a, the second switching element 156b, and The first switching element 156c and the third switching element 156d are formed of transistors. The first switching element 156a, the second switching element 156b, and the third switching element 156c are The control signal lines 157a, 157b, and 157c connected to the gates of the transistors are turned on and off. Off is controlled.

[0036] The first switching circuit 120_1 includes a first switching element 156a, a second switching element 156b, and a 56b and a third switching element 156c, and The first switching element 1 is exclusively switched by the control signal of the first switching element 157c. The second switching element 156a receives a control signal from the control signal line 157a, and the second switching element 156b receives a control signal from the control signal line 157b. The third switching element 156c is turned on by the control signal on the line 157b. The control signal c controls one of these switching elements. is turned on and the other two switching elements are turned off. The other switching circuits 120_2 to 120_h operate in the same manner.

[0037] The first switching circuit 120_1 has an input terminal connected to a first connection terminal 146a and an output terminal connected to a plurality of The data signal lines 108 (S1 to S3) are connected to the first switching circuit 120_1. In this case, the first switching element 156a is connected to the first connection terminal 146a and the data signal line 108. (S1), and the second switching element 156b is connected to the first connection terminal 146a. The third switching element 156c is connected between the first connection terminal and the data signal line 108 (S2). The other switching circuit 120 is connected between the terminal 146a and the data signal line 108 (S3). 2 to 120_h have the same circuit configuration. a first switching element 156a, a second switching element 156b, and a third switching element 156 By the switching operation of the signal input to the first connection terminal 146a, a plurality of data The other switching circuits 120_2 to 120_3 have the function of distributing the signal to the signal lines 108 (S1 to S3). _h has a similar function.

[0038] A first sensor electrode 112_ is provided between the first switching circuit 120_1 and the second switching circuit 120_2. The first sensor electrode 112_1 is connected to the second connection terminal 146b. Similarly, the first sensor electrodes 112_2 to 112_k are connected to the other switching circuits 120_2 to 120_h. is disposed between the

[0039] The shield electrode 116 is provided so as to overlap the area of ​​the terminal portion 122. The end of 116 is located outside the first connection terminal 146a and the second connection terminal 146b. The first connection terminal 146a and the second connection terminal 146b are sealed with an insulating layer (not shown) sandwiched therebetween. The first connection terminal 146a and the second connection terminal 146b are provided on the upper layer side of the bond electrode 116. is provided on the upper side of the shield electrode 116, and the flexible circuit board 126 is connected It can withstand the crimping process when used, and can prevent dents, deformation, and peeling. In addition, the first connection terminal 146a and the second connection terminal 146b are provided on the upper side of the shield electrode 116. By providing the sensor, the video signal is propagated to the touch and fingerprint sensor unit 110 as noise. This can prevent the following.

[0040] The first sensor electrodes 112_1 to 112_k are shield electrodes with an insulating layer (not shown) sandwiched therebetween. The first sensor electrode 112_1 and the second connection terminal 146b are provided on the lower layer side of the first sensor electrode 112_2. A first opening 158 is provided in the shield electrode 116 to connect the extending wiring. A first contact hole 159 is formed inside the first opening 158 and penetrates an insulating layer (not shown). The first sensor electrode 112_1 and the second connection terminal 146b are connected to each other through a first opening 158. The connection is made by a first contact hole 159 having a hole diameter smaller than the diameter of the first contact hole 159.

[0041] The second driving circuit 128 is connected to the data signal line driving circuit block 132 and the touch and fingerprint sensor. detection circuit block 134 (further including a scanning signal line driving circuit block 13, not shown) The data signal line driving circuit block 132 includes the switching circuits 120 (120_1 to 120_1). 20_h). The arrangement of the lock is arbitrary, and the data signal line driving circuit block 132 and the touch and fingerprint sensor The arrangement of the detection circuit block 134 may be reversed from the arrangement shown.

[0042] In a terminal section where the connection terminals are arranged, a plurality of data signal lines and a plurality of first sensor electrodes are arranged. If you try to connect all of these separately and independently to the individual connection terminals, the pitch of the connection terminals will be too high. Generally, the smaller the pitch of the connection terminals on the terminal section, the more flexible the cable becomes. This makes it difficult to connect to the circuit board, leading to defects and a decrease in manufacturing yield. do.

[0043] In contrast, the display device 100 with a touch and fingerprint sensor according to this embodiment includes a switching circuit 1 The number of connection terminals has been reduced by providing 20 (120_1 to 120_h). That is, by providing the switching circuit 120, multiple signals can be connected to one first connection terminal 146a. It is possible to connect multiple data signal lines 108 (for example, S1 to S3), and the connection terminal As a result, the number of electrodes connected to the first sensor electrode 112 is reduced. Even if the second connection terminal 146b is added, a simple increase in the number of connection terminals is prevented, and the narrow pin pitch of the connection terminal is reduced. As a result, poor connection with the flexible circuit board 126 can be prevented. It can be prevented.

[0044] FIG. 6 shows a first switching element constituting the switching circuit 120 (120_1 to 120_h). The first switching element 156a, the second switching element 156b, and the third switching element 156c are The first switching element 156a and the second switching element 156b are configured with a double-gate transistor. The third switching element 156b and the third switching element 156c are of dual gate type. By using a transistor, the rise and fall of switching becomes steeper, The switching circuits 120 (120_1 to 120_h) can operate even if the driving frequency is increased. This allows the frame frequency of the display device 100 with a touch and fingerprint sensor to be increased. Even if the frame frequency is changed, the switching circuits 120 (120_1 to 120_h) are synchronized with the frame frequency. In addition, the first switching element 156a and the second switching element 156b, and the third switching element 156c is a dual-gate transistor. By doing so, the off-current (leakage current when the switch is off) can be reduced, and This allows for efficient switching operation and reduces power consumption.

[0045] FIG. 7 shows an example in which the end of the shield electrode 116 is arranged inside the terminal portion 122. The end of the field electrode 116 is disposed in the region between the terminal portion 122 and the first opening 158, and the The first connection terminal 146a and the second connection terminal 146b are disposed outside the shield electrode 116. According to this structure, the first connection terminal 146a and the second connection terminal 146b are connected to the seal. This reduces the parasitic capacitance between the gate electrode 116 and the semiconductor substrate 110, thereby reducing power consumption. In FIG. 7, the configuration other than the shield electrode 116 is the same as that shown in FIG.

[0046] FIG. 5 shows a case where one first sensor electrode 112 is provided for one row of pixels 104. If a certain degree of decrease in sensitivity as a fingerprint sensor is acceptable, It is also possible to reduce the number of sensor electrodes 112. For example, if the pixels 104 are arranged in two columns, A single first sensor electrode 112 may be provided for each of the first and second sensor electrodes 112. FIG. 8 shows a switching circuit in this case. 8 shows the arrangement of the first sensor electrodes 112 and the first sensor electrodes 120. As shown in FIG. Even when the number of terminals is reduced, the switching circuit 120 can be arranged, and the connection of the terminal portion 122 The terminal pitch can be increased.

[0047] 5, 6, 7, and 8, the connection terminals of the terminal portion 122 are arranged at a uniform pitch. Although it has not been done yet, the yield of the process of connecting the terminal portion 122 and the flexible circuit board 126 is To further improve the reliability, it is preferable to arrange the connection terminals at a uniform pitch.

[0048] 1-4. Structure of the sensor electrode 1-4-1. First sensor electrode FIG. 9 shows an arrangement of a plurality of pixels 104, a plurality of first sensor electrodes 112, and a plurality of second sensor electrodes 113. 9 shows the arrangement of the first sub-electrode 114 corresponding to red (R). The pixel 105r, the second sub-pixel 105g corresponding to green (G), the third sub-pixel 105g corresponding to blue (B), The pixel 105b is included, and sub-pixels corresponding to each color are arranged in stripes in the first direction (column direction). The first sensor electrode 112 extending in the first direction (column direction) is connected to a plurality of pixels 1. 4 in the first direction (column direction) and extending in the second direction (row direction). The sensor electrodes 114 are also arranged in accordance with the arrangement of the plurality of pixels 104 in the second direction (row direction). do.

[0049] In order to detect a fingerprint, the first sensor electrodes 112 are provided at a pitch of 25 μm to 120 μm. The most suitable pitch range is 45 μm to 75 μm. The first sensor electrode 112 and the second sensor electrode 114 must also be arranged at a similar pitch. If the pitch of the electrodes 114 is too large, the resolution will decrease and the fingerprint will not be detected accurately. On the other hand, even if the pitch is reduced to less than 25 μm, the accuracy of fingerprint detection does not improve, and the number of sensor electrodes increases. This will result in over-spec.

[0050] Although not shown in FIG. 9, the data signal lines are connected to the first subpixel 105r, the second subpixel 105g, and third sub-pixels 105b are provided corresponding to the arrangement in the first direction (column direction). The first sensor electrodes 112 are provided at a ratio of one to three data signal lines. The data signal lines corresponding to the pixel 105r, the second subpixel 105g, and the third subpixel 105b The pitch is, for example, 5.5 inches, a full HD smartphone display panel. Therefore, the distance between the first sensor electrodes 104 in the column direction is 17 μm. 12, the pitch of the first sensor electrodes 112 is 51 μm. 6 and 7, the first connection terminals 146a are arranged at a pitch of 51 μm. The second connection terminal 146b is disposed between the terminals 122. The pitch of the second sensor electrode 114 is 25.5 μm. The second subpixel 105r, the second subpixel 105g, and the third subpixel 105b correspond to the second direction (row direction). The pitch of the scanning signal lines is 51 μm, and the pitch of the second sensor electrodes 114 is also 51 μm. It becomes m.

[0051] For fingerprint detection, the pitch of the sensor electrodes is about 50 μm from the viewpoint of resolution. It is considered necessary to have a fingerprint sensor that is acceptable even if its sensitivity is reduced to some extent. In this case, the number of first sensor electrodes 112 may be reduced. In that case, according to the above example, the first sensor electrode 112 The pitch is 102 μm, and the pitch of the connection terminals in the terminal portion 122 is widened to about 34 μm. It becomes possible to

[0052] 10 shows the arrangement of the first sensor electrodes 112 and the second sensor electrodes 114 shown in FIG. 10 shows an example in which the pitch of both sensor electrodes is increased. One first sensor electrode 112 is provided for two rows of the sensor electrodes 104 in the column direction, and two first sensor electrodes 112 are provided for two rows of the sensor electrodes 104 in the row direction. In this example, one second sensor electrode 114 is provided for the row arrangement. The pitch between the first sensor electrode 112 and the second sensor electrode 114 is about 100 μm. The arrangement of the first sensor electrodes 112 shown in FIG. The arrangement of the connection terminals in the switching circuit 120 and the terminal section 122 for the column is as shown in FIG. This allows the pitch of the connection terminals to be increased.

[0053] 11A and 11B show an example of the first sensor electrode 112. 11B shows a plan view of electrode 112, and FIG. 11B shows a cross-sectional view corresponding to A1-A2.

[0054] The first sensor electrodes 112 are strips extending along a first direction (column direction) in the display unit 102. The first sensor electrode 112 has a stripe pattern. The first sensor electrode layer 204 is formed of, for example, indium tin oxide (IndI ITO, aluminum (Al) or gallium (Ga) doped zinc oxide Lead (Zinc Oxide: ZnO), Indium Zinc Oxide (IZO), Oxide Tin (Tin Oxide: SnO2) and niobium (Nb) doped titanium oxide (TiO x ) etc. Titanium nitride (TiN), a metal oxide with high electrical conductivity x ), titanium oxynitride (TiON), etc. conductive transparent conductive films such as metal nitrides or metal oxynitrides, conductive films such as polyaniline and graphene, The width W1 of the first sensor electrode 112 is equal to the width W1 of the sub-pixel 105. The first sensor electrode layer 204 is formed so as to be wider than Wp. Since the first sensor electrodes 112 are arranged in accordance with the arrangement in the column direction, It is provided to cover the entire surface.

[0055] A first auxiliary electrode 205a may be added to the first sensor electrode layer 204. The electrodes 205a are arranged along the upper edges of both sides of the stripe pattern of the first sensor electrode layer 204. The first auxiliary electrodes 205a have a thin line pattern. In the region where the adjacent sub-pixels 105 are spaced apart, a strip-shaped pattern is formed to connect the thin line-shaped patterns on both sides. The first auxiliary electrode 205a forms the first sensor electrode layer 204. The first auxiliary electrode 205a is made of a material with a lower resistance than the transparent conductive film material. For example, the first auxiliary electrode 205a is made of aluminum. Metal films such as aluminum (Al), metal nitrides such as titanium nitride (TiN), titanium silicide ( TiSi x The conductive material is a metal silicide such as The first auxiliary electrodes 205a are formed in a manner to be connected to the data signal lines 108 provided in the display section 102. The first electrode 104 is formed to have substantially the same width (thickness) and is disposed at a position overlapping the data signal line 108. By providing the first auxiliary electrode 205a in contact with the sensor electrode layer 204, the first sensor electrode 11 2 can be reduced in resistance.

[0056] Since the width W1 of the first sensor electrode layer 204 is larger than the width Wp of the subpixel 105, The resistance of the first sensor electrode 112 can be reduced without reducing the aperture ratio of the element 105. For example, the display of the 5.5-inch, full HD smartphone mentioned above In the case of a display panel, the width of the first sensor electrode 112 is set to 20 μm, which is wider than 17 μm (51 μm / 3). The pitch L1 of the strip-shaped pattern of the first auxiliary electrode 205a can be set to m. It is preferable that the pitch L1 of this strip-shaped pattern is greater than the length Lp of the sub-pixel 105. , may be the same as the pitch of the scanning signal lines. In the above example, the pitch L1 is 51 μm. may be.

[0057] The width (thickness) of this strip-shaped pattern is formed to be substantially the same as the width (thickness) of the scanning signal line 106. The pixel electrodes 104 are formed and arranged at positions overlapping the scanning signal lines 106. By such an arrangement, the aperture ratio is Therefore, the resistance of the first sensor electrode 112 can be reduced without causing a decrease in the resistance of the first sensor electrode 112.

[0058] In this way, by providing the first auxiliary electrode 205a on the first sensor electrode layer 204, This allows the resistance of the touch and fingerprint sensor unit 112 to be reduced. This prevents a decrease in sensitivity and a decrease in response speed.

[0059] 12A and 12B show another example of the first sensor electrode 112. 12A shows a plan view of the sensor electrode 112, and FIG. 12B shows a cross-sectional view corresponding to the line B1-B2.

[0060] The first auxiliary electrode 205b is provided in contact with the first sensor electrode layer 204. 05b is a thin line pattern provided in the center of the first sensor electrode layer 204 and a sub-pixel The pattern has a composite shape with the strip-shaped pattern provided in the area between the arrays of 105. The first auxiliary electrode 205b is formed of a metal film, a metal nitride film, or a metal silicide film. The first auxiliary electrodes 205b having the shapes shown in FIGS. 12A and 12B are connected to the data signal lines 10 of the display unit 102. 8 and is arranged to overlap with the data signal line 108. The strip-shaped pattern of the first auxiliary electrode 205b has substantially the same width (thickness) as the scanning signal line 106. and is arranged so as to overlap the scanning signal line 106. The resistance of the first sensor electrode 112 can also be reduced by 5b.

[0061] 1-4-2. Second sensor electrode Figure 13A shows a plan view of the second sensor electrode 114. Figure 13A also shows the second sensor electrode 114 (first gate electrode 152, The second oxide semiconductor layer 180b and the second gate electrode 153 are indicated by dotted lines. 3A shows a cross-sectional structure corresponding to the section C1-C2 shown in FIG.

[0062] The second sensor electrodes 114 are strips extending in the second direction (row direction) in the display unit 102. The second sensor electrode 114 has a stripe pattern. The second sensor electrode 114 is provided so as to extend across the substrate 110 in the direction perpendicular to the substrate 110 and reach the peripheral region at both ends. The second sensor electrode layer 206 is formed of a light-transmitting second sensor electrode layer 206. Like the first sensor electrode layer 204, it is formed of a transparent conductive film.

[0063] The second sensor electrode 114 is provided with a second auxiliary electrode 207. The second auxiliary electrode 207 is The second auxiliary electrode 207 is provided in contact with the second sensor electrode layer 206. The second auxiliary electrode 207 is formed of a metal film, a metal nitride film, a metal The second sensor electrode 114 is formed of a silicide film. The second sensor electrode layer 206 and the second auxiliary electrode 207 are formed to reduce resistance. do.

[0064] FIG. 13B shows a transparent resin substrate 200 including a first transparent resin layer 202a, a second transparent resin layer 202b, and a 02b, the third transparent resin layer 202c, the fourth transparent resin layer 202d, the first insulating layer 210, the second insulating layer The second sensor electrode layer 206 is formed on the second transparent resin layer 202. The second auxiliary electrode 207 is provided between the second sensor electrode 202b and the third transparent resin layer 202c. The shield electrode 116 is provided between the polar layer 206 and the third transparent resin layer 202c. The fourth transparent resin layer 202 is provided on the shield electrode 116. The first insulating layer 210 is provided on the fourth transparent resin layer 202d. The second oxide semiconductor layer 180b is provided between the first insulating layer 210 and the second insulating layer 212. A second gate electrode 153 is provided on the second insulating layer 212 .

[0065] A second light-shielding layer 208b is provided below the first gate electrode 152. b is formed of a conductive film that continues from the second auxiliary electrode 207. In other words, As shown in the figure, the linear pattern of the second auxiliary electrodes 207 extending in the second direction (row direction) is The area where the transistor 138 is provided has a pattern that protrudes in a convex shape. The second auxiliary electrode 207 having turns serves as a second light-shielding layer 208b for the subpixel 105. In addition, when viewed from above, the second light-shielding layer 208b protruding from the second auxiliary electrode 207 has the following function. The shape in the drawing is arbitrary and is not limited to the shape shown in FIG. 13A.

[0066] The second auxiliary electrodes 207 are used as the scanning signal lines (gate bus lines) 106 of the display section 102. The second gate electrode 153 is provided on the second insulating layer 212. The second gate electrode 153 is separated and provided for each sub-pixel 105. The second insulating layer 212, the first insulating layer 210, the fourth transparent resin layer 202d, the third transparent resin layer 2 The second auxiliary electrode 207 is connected to the third contact hole 163 that penetrates the first electrode 02c. The shield electrode 1 disposed between the third transparent resin layer 202c and the fourth transparent resin layer 202d The third contact hole 163 has a diameter d1 larger than the diameter d2 of the third contact hole 163. The third contact hole 163 is formed in the area inside the third opening 162. It is provided so as to penetrate the area.

[0067] The first gate electrode 152 is provided on and connected to the shield electrode 116 . The first gate electrode 152 is fixed to the same potential as the shield electrode 116. Selection Transistor 138 is a gate electrode to which a constant potential is applied on the opposite side (back channel side) of the second gate electrode 153. By providing the first gate electrode 152, fluctuations in electrical characteristics are suppressed.

[0068] In the structure shown in FIGS. 13A and 13B, the scanning signal line 106 is connected to the second oxide semiconductor layer 180. Since the second insulating layer 212 is disposed on the lower layer side than the layer b, the thickness of the second insulating layer 212 is set to about 100 nm to 200 nm. The second gate electrode 153 does not cross the data signal line 108. Therefore, even if the film thickness of the second insulating layer 212 is made thin, the two will not be short-circuited. By thinning the second insulating layer 212, which functions as a gate insulating layer, the switching characteristics are excellent and the response speed is high. A fast select transistor 138 can be obtained.

[0069] Note that FIG. 13A shows only the selection transistor 138, and the drive transistor 136 is omitted. However, the metal layer forming the second auxiliary electrode 207 is used to form the driving transistor 1. A light-shielding layer can also be provided for 36 in the same manner.

[0070] 14A and 14B show a case where the second sensor electrode 114 has the same structure as that shown in FIGS. 13A and 13B. 14A shows a plan view of the second sensor electrode 114. The structure of a part of the selection transistor 138 provided on the second sensor electrode 114 (first gate) The gate electrode 152, the second oxide semiconductor layer 180b, the second gate electrode 153, the scanning signal line 10 14B shows a cross-sectional structure corresponding to the section C3-C4 shown in FIG. 14A. 4C shows a cross-sectional structure corresponding to the section C5-C6 shown in FIG. 14A.

[0071] The second sensor electrode 114 is formed by a second sensor electrode layer 206 and a second auxiliary electrode 207. The second auxiliary electrode 207 is arranged along the longitudinal direction of the second sensor electrode 114 in the display unit 102. The second sensor electrode 114 has a linear pattern extending from the first auxiliary electrode 207. The second light-shielding layer 208b is formed by a metal film that forms a second oxide semiconductor layer 180b. It can be done.

[0072] The second gate electrode 153 and the scanning signal line 106 are provided on the second insulating layer 212. The gate electrode 153 is formed in a pattern that continues from the scanning signal line 106. The second gate electrode 153 and the scanning signal line 106 are formed of the same conductive layer. 153 is provided for each row of the sub-pixels 105 and is connected by the scanning signal line 106.

[0073] The scanning signal line 106 is connected to the second auxiliary electrode 207 in the peripheral region. The shield electrode 116 is provided with a fourth opening 164. The fourth opening 164 is provided inside the fourth opening 164 and has a smaller diameter than the diameter of the fourth opening 164. The second light-shielding layer 208b is connected to the second auxiliary electrode 207 through a contact hole 165. The second auxiliary electrode 207 may be separate as shown, or may be a single electrode as shown in FIG. 13B. As shown, the second auxiliary electrode 207 may be provided so as to be continuous with the second auxiliary electrode 207.

[0074] In this way, by connecting the scanning signal line 106 to the second auxiliary electrode 207 in the peripheral region, In other words, the second auxiliary electrode 207 can be connected to the scanning signal line 10. It can be used as auxiliary wiring for 6.

[0075] 14A and 14C show only the selection transistor 138 and the drive transistor 1 The drive transistor 136 has the same structure as the selection transistor 138. The second light-shielding layer 208b is provided using the metal film that forms the second auxiliary electrode 207. It's fine.

[0076] 1-5. Partial structure of pixels and sensors FIG. 15 shows the subpixel 105 (first subpixel 105r, second subpixel 10 5g, and the third sub-pixel 105b) are shown in FIG. 15, the first sensor electrode 112, the second sensor electrode 114, and the EL element 142 The details of the laminated structure are omitted.

[0077] As shown in FIG. 15, the subpixel 105 includes a driving transistor 136 and a selection transistor 13 8, a capacitance element 140, and an EL element 142. In the area of ​​the sub-pixel 105, a scanning signal line 10 6a, a data signal line 108, a common electrode 144a, and a common wiring 144b are provided. The drive transistor 136 has a first gate electrode 150 ( The selective transistor has a structure in which a first gate electrode 151 (lower layer side) and a second gate electrode 152 (upper layer side) are provided. The gate electrode 138 is connected to the first gate electrode 152 (lower layer side) with the second oxide semiconductor layer 180b interposed therebetween. The driving transistor 136 has a structure in which a second gate electrode 153 (upper layer side) is provided. A first light-shielding layer 208a is provided on the lower layer side, and a second light-shielding layer 208b is provided on the lower layer side of the select transistor 138. The first light-shielding layer 208a and the second light-shielding layer 208b are provided to shield the scanning signal line 1. The first light-shielding layer 208a and the second light-shielding layer 206a are made of the same conductive layer. The scanning signal line 208b is formed in a pattern that continues from the scanning signal line 106a.

[0078] The driving transistor 136 includes a first oxide semiconductor layer 180a, a first metal oxide conductive layer 17 6a, and second metal oxide conductive layer 176b. The second metal oxide conductive layer 176b is provided so as to be in contact with the first oxide semiconductor layer 180a. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are spaced apart from each other at their ends. The edge and the spaced apart region are the first gate electrode 150. , the second gate electrode 151, and the first oxide semiconductor layer 180a. The channel of the driving transistor 136 is formed by the first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b. The conductive layer 176b is formed in a portion where the conductive layer 176b is separated.

[0079] The first metal oxide conductive layer 176a is provided in contact with the source wiring 170. 70 is connected to the common electrode 144a through a fifth contact hole 166. The metal oxide conductive layer 176b is formed in contact with the first electrode 220 that forms the EL element 142. The second metal oxide conductive layer 176b and the first electrode 220 are provided in a continuous pattern. .

[0080] The second metal oxide conductive layer 176b extends to the area of ​​the EL element 142 and serves as the first electrode (cathode). The first oxide semiconductor layer 180a is extended to the region of the EL element 142, The first electron transport layer 222a is formed. The first electron transport layer 222a is formed so as to cover the first electrode 220. It will be set up like this.

[0081] The selection transistor 138 is formed by the second oxide semiconductor layer 180b, the third metal oxide conductive layer 17 6c, and a fourth metal oxide conductive layer 176d. The fourth metal oxide conductive layer 176d is provided so as to be in contact with the second oxide semiconductor layer 180b. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are spaced apart from each other at their ends. The edge and the spaced apart region are the first gate electrode 152. , the second gate electrode 153, and the second oxide semiconductor layer 180b. The channel of the select transistor 138 is formed by the third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d. The conductive layer 176d is formed in a portion where the conductive layer 176d is separated.

[0082] The third metal oxide conductive layer 176c is formed so as to include an area overlapping and contacting the data signal line 108. The fourth metal oxide conductive layer 176d is provided so as to be in contact with the drain wiring 173. The fourth metal oxide conductive layer 176d and the drain wiring 173 are formed in the region of the capacitor element 140. The slits are provided so as to extend into the area.

[0083] The second gate electrode 153 of the selection transistor 138 is provided individually for each sub-pixel 105. and is connected to the scanning signal line 106a (207) through the third contact hole 163. The second gate electrode 151 of the driving transistor 136 is connected to the seventh contact hole 168. It is connected to the drain wiring 173 via the drain wiring 173 .

[0084] The capacitance element 140 is connected to the drain wiring 173, the fourth metal oxide conductive layer 176d, and a common The drain wiring 173 and the fourth metal oxide conductive layer 144b are formed in an area where they overlap. An insulating layer (not shown in FIG. 15) is interposed between the layer 176d and the common wiring 144b. stomach).

[0085] 16A shows a cross-sectional structure of the subpixel 105 corresponding to the line D1-D2 shown in FIG. 16B shows a cross-sectional structure of the subpixel 105 corresponding to the line D3-D4 shown in FIG. 16A shows the cross-sectional structure of the driving transistor 136 and the EL element 142, and FIG. 16B shows the cross-sectional structure of the selection transistor 1 shows the cross-sectional structure of a transistor 138 and a capacitor element 140.

[0086] The first sensor electrode 112 and the second sensor electrode 114 are provided on a transparent resin substrate 200 . A driving transistor 136, a selection transistor 138, a capacitance element 140, and an EL element 14 2 is provided on a transparent resin substrate 200. The transparent resin substrate 200 is made up of a plurality of transparent resin layers stacked together. The transparent resin substrate 200 has a layered structure. The transparent resin substrate 200 has a first transparent resin layer 202a, a second transparent resin layer 202b, and a The first transparent resin layer 202b and the third transparent resin layer 202c are laminated together. The first sensor electrode 112 is provided between the second transparent resin layer 202a and the second transparent resin layer 202b. The second sensor electrode 114 is provided between the resin layer 202b and the third transparent resin layer 202c. The touch and fingerprint sensor unit 110 is embedded in a transparent resin substrate 200. do.

[0087] The display device 100 with a touch and fingerprint sensor according to this embodiment includes a pixel 104 (specifically, The light emitted from the EL element 142 provided in each sub-pixel 105 is emitted from the transparent resin substrate 200 side. The first sensor electrode 112 and the second sensor electrode 113 are arranged in the area overlapping the pixel 104. 114 is formed of a transparent conductive film so that light emitted from the pixel 104 can pass through. is an opening through which light passes in accordance with the arrangement of the first sensor electrode 112 and the second sensor electrode 114. That is, the first sensor electrode 112 and the second sensor electrode 114 may be provided. The first auxiliary electrode 205a has a ladder-shaped pattern like the first auxiliary electrode 205a shown in FIGS. 11A and 11B. Metal films such as aluminum (Al), metal nitride films such as titanium nitride (TiN), titanium nitride films, etc. Reside (TiSi x ) or the like.

[0088] A first transparent resin layer 202a, a second transparent resin layer 202b, a third transparent resin layer 202c, and The transparent resin layer 202d has a thickness of 3 μm to 20 μm, preferably 10 μm to 15 μm. The transparent resin substrate 200 is flexible due to the structure in which transparent resin layers with such thicknesses are laminated. The display device 100 with a touch and fingerprint sensor has a transparent resin substrate 200 side that is a sensor. The first sensor electrode 112 and the second sensor electrode 114 are used to detect a fingerprint. When the first transparent resin layer 202a is used as an electrode for outputting light, it is preferable that the thickness of the first transparent resin layer 202a is thin. The first transparent resin layer 202a and the second transparent resin layer 202b have a thickness of about 10 μm to 15 μm. By providing the contact holes at a certain depth, high fingerprint detection sensitivity can be achieved. In order to form the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 20 2d is preferably as thin as possible if pinholes are not generated, but parasitic capacitance increases. Therefore, it is preferable that the thickness of the first transparent electrode is 3 μm to 5 μm. The resin layer 202a is a layer that becomes the skeleton of the transparent resin substrate 200, and therefore has a thickness of 20 μm to 50 μm. It is preferable that the thickness is about the same.

[0089] A first light-shielding layer 208a is formed on the second sensor electrode 114 and overlaps the driving transistor 136. A second light-shielding layer 208b is provided to overlap the first and second light-shielding layers 208a and 208b, and the first and second light-shielding layers 208a and 208b overlap the first and second light-shielding layers 208a and 208b. The second light-shielding layer 8a and the second light-shielding layer 208b are formed of a metal film, a metal nitride film, or a metal silicide film. The first light-shielding layer 208a and the second light-shielding layer 208b are formed on the second sensor electrode 11 as shown in FIG. 4, the scanning signal line 106a (which is also the second auxiliary electrode 207) is provided in the same layer. do.

[0090] A driving transistor 136, a selection transistor 138, a capacitance element 140, and an EL element 1 42 and the first and second sensor electrodes 112 and 114. The shield electrode 116 is formed by the third transparent resin layer 202c and the fourth transparent resin layer 202d. The shield electrode 116 is provided over the entire display unit 102.

[0091] The shield electrode 116 is formed of a transparent conductive film. Tin (Indium Tin Oxide: ITO), Zinc Oxide (ZnO), Indium Zinc Oxide (Indium Conductive metal oxides such as zinc oxide (IZO), tin oxide (SnO2), titanium nitride Conductive metal nitrides such as titanium (TiNx) and titanium oxynitride (TiON) or metal oxynitrides Organic materials having conductivity such as transparent conductive films, polyaniline, graphene, etc. are used. Alternatively, the shield electrode 116 may be made of a metal material such as aluminum, titanium, or copper. and has a structure in which openings are provided to allow light to pass through in accordance with the pixel arrangement. A common electrode 144a and a common wiring 144b are provided in contact with the upper surface of the shield electrode 116. The common wiring 144b extends in the same direction as the scanning signal line 106a. The common electrode 144a and the common wiring 144b are made of aluminum (Al The common electrode 144a, the common wiring 144b and the shield electrode 144b are formed of a metal film such as a metal film. 16 are at the same potential and a constant potential is applied. For example, the shield electrode 116 and the common electrode The ground potential is applied to the common wiring 144a and the common wiring 144b.

[0092] Above the shield electrode 116, a first gate electrode 150 of the drive transistor 136 and a selector electrode 150 are provided. A first gate electrode 152 of the select transistor 138 is provided. The first gate electrode 152 is formed in the same layer as the common electrode 144a and the common wiring 144b. The first gate electrode 150 and the first gate electrode 152 are formed of a metal film. The electrode 150 and the first gate electrode 152 are provided in contact with the upper surface of the shield electrode 116. The first gate electrode 150 and the first gate electrode 152 are applied with the same potential as the shield electrode 116. can be.

[0093] In the touch and fingerprint sensor unit 110, the first sensor electrode 112 is a receiver electrode (Rx The second sensor electrode 114 functions as a transmitter electrode (Tx electrode). When the touch and fingerprint sensor unit 110 is activated, the second sensor electrode 114 has a rectangular shape. A pulse voltage is applied. A voltage generated by a rectangular pulse voltage applied to the second sensor electrode 114 The electric field is shielded by the shield electrode 116. Therefore, the display unit 102 and the touch and fingerprint sensor unit 110 can be driven without interfering with each other. The touch and fingerprint sensor unit 110 is immune to the influence of noise caused by driving the display unit 102. This eliminates the need for touch screens, allowing for highly accurate fingerprint detection. The image can be displayed in a stable state without being affected by the fingerprint sensor unit 110.

[0094] A fourth transparent resin layer 202d is provided on the shield electrode 116. 02a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202 Since the first sensor electrode 112 and the second sensor electrode 11d are formed by applying a resin composition, 4, the first gate electrode 150, the first gate electrode 152, and the common electrode 144a, The unevenness caused by the lines 144b can be filled in, and the surface of the fourth transparent resin layer 202d can be flattened. It is possible.

[0095] First transparent resin layer 202a, second transparent resin layer 202b, third transparent resin layer 202c, fourth transparent resin layer The resin material for forming the transparent resin layer 202d may be a transparent polyimide resin, a transparent polyethylene naphtha, or the like. Phthalate resin, transparent para-polyamide resin, etc. are used. Transparent polyimide resin, transparent Polyethylene naphthalate resin has poorer gas barrier properties than glass substrates, so A gas barrier film made of a silicon nitride film or the like may be provided. Since the polyamide resin has transparency, heat resistance, and gas barrier properties, the transparent resin substrate 200 The first transparent resin layer 202a and the second transparent resin layer 202b can be suitably used as a material for forming the first transparent resin layer 202a and the second transparent resin layer 202b. The resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d are made of the same resin material. Alternatively, some or all of the layers may be formed from different resin materials. For example, the fourth transparent resin layer 202d may be made of a transparent para-polymer resin having high rigidity and high gas barrier properties. By using the polyamide resin, the long-term reliability of the EL element 142 can be improved.

[0096] The transparent resin substrate 200 preferably has heat resistance of 150°C to 400°C. The maximum process temperature ( If the heating temperature is 250°C or less, para-polyamide resin should be used as the resin material. By using para-polyamide resin, the transparent resin substrate 200 itself can be made to have a gas barrier property. On the other hand, the drive transistor 136 and the selection transistor 138 When the maximum process temperature (heating temperature) when forming is 250°C or higher, From the viewpoint of the above, it is preferable to use a transparent polyimide resin as the material for forming the transparent resin substrate 200. I wish.

[0097] In addition, nanocellulose fiber was used for transparent polyimide resin and transparent para-polyamide resin. CNF may be mixed with transparent polyimide resin or transparent para-polyamide resin. Transparent polyimide resin and transparent para-polymer resin mixed with nanocellulose fiber (CNF) Polyamide resins offer the advantages of increased rigidity, reduced shrinkage, and improved dimensional stability. In order to improve the heat resistance of the transparent resin substrate 200, the first transparent resin layer 202a, The second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d At least one layer may contain cellulose nanofibers (CNF). Nanocellulose fiber (CN) for light polyimide resin and transparent para-polyamide resin The mixing ratio of F) is preferably 1% by weight to 10% by weight.

[0098] The driving transistor 136 shown in FIG. 16A includes a first gate electrode 150, a first insulating layer 210, and a , a first oxide semiconductor layer 180a, a second insulating layer 212, and a second gate electrode 151 are stacked. The first gate electrode 150 is connected to the first oxide semiconductor layer 1 via the first insulating layer 210. The second gate electrode 151 is disposed so as to overlap the first insulating layer 212. The first gate electrode 150 and the second gate electrode 160 are disposed so as to overlap with the oxide semiconductor layer 180a. The electrode 151 and the first oxide semiconductor layer 180a have overlapping regions, and the driving transistor The channel of the driving transistor 136 is formed in the overlapping region. 36, the first gate electrode 150 is applied with the same potential as the shield electrode 116, and the second gate A voltage based on a data signal (a voltage based on a video signal) is applied to electrode 151 .

[0099] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are formed on the first insulating layer 21. 0 and the first oxide semiconductor layer 180a. The second metal oxide conductive layer 176b is formed between the first gate electrode 150 and the second gate electrode 150 in plan view. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are disposed so as to sandwich the electrode 151 from both sides. The metal oxide conductive layer 176b is provided so as to be in contact with the lower surface of the first oxide semiconductor layer 180a. The driving transistor 136 has a second metal oxide conductive layer 176b and a first oxide semiconductor layer 176c. The region in contact with the first metal oxide conductive layer 176a becomes the drain region, and the first oxide conductive layer 176b becomes the drain region. The region in contact with the semiconductor layer 180a becomes the source region.

[0100] The first oxide semiconductor layer 180a is formed using a metal oxide semiconductor material. Semiconductor materials include quaternary metal oxide materials, ternary metal oxide materials, and binary metal oxide materials. The metal oxide semiconductor materials are The metal oxide semiconductor material may have a single layer structure or a multilayer structure. may be amorphous or may have crystalline properties.

[0101] As quaternary oxide materials, In2O3-Ga2O3-SnO2-ZnO oxide materials, Ternary oxide materials include In2O3-Ga2O3-SnO2 oxide materials, In2O3- Ga2O3-ZnO-based oxide materials, In2O3-SnO2-ZnO-based oxide materials, In2 O3-Al2O3-ZnO oxide materials, Ga2O3-SnO2-ZnO oxide materials, Ga2O3-Al2O3-ZnO oxide materials, SnO2-Al2O3-ZnO oxides Materials, binary oxide materials such as In2O3-ZnO oxide materials and SnO2-ZnO oxide materials oxide materials, Al2O3-ZnO-based oxide materials, MgO-ZnO-based oxide materials, SnO2- MgO-based oxide materials, In2O3-MgO-based oxide materials, and single-component oxide materials, such as In 2O3-based metal oxide materials, SnO2-based metal oxide materials, ZnO-based metal oxide materials, etc. In addition, silicon (Si), nickel (Ni), tungsten (Tungsten), and the like can be added to the oxide semiconductor. Contains titanium (Ti), tantalum (Ta), and tungsten (W). For example, the In—Ga—Zn—O-based oxide material shown above may be at least It is an oxide material containing In, Ga, and Zn, and there is no particular limitation on the composition ratio. Quaternary oxide materials, ternary oxide materials, binary oxide materials, and single oxide materials are included. The oxide to be used is not limited to one having a stoichiometric composition, and may have a composition deviating from the stoichiometric composition. Such metal oxide semiconductor materials may be made of an oxide material. It has a band gap of 1000 or more and is transparent to light in the visible light range.

[0102] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b have electrical conductivity. It is made of metal oxide material, metal nitride material or metal oxynitride material. Examples of suitable metal oxide materials include indium tin oxide (ITO) and zinc oxide (Zn O), indium zinc oxide (IZO), tin oxide (SnO2), niobium-doped oxide Titanium (TiNbO x ) and titanium nitride (TiN x ), titanium oxynitride It is also possible to use metal nitrides and metal oxynitrides that have transparency and conductivity, such as TiON. can.

[0103] The source electrode (first metal oxide conductive layer 176a) of the driving transistor 136 is a common electrode. The first metal oxide conductive layer 176a is connected to the fifth contact hole 166. The first metal oxide conductive layer 176a is provided to be in contact with the common electrode 144a via a metal oxide conductive layer 176b. A source wiring 170 made of a metal film is provided on the fifth contact. The fifth contact hole 166 is provided so as to extend to the area of ​​the first contact hole 166. The source wiring 170 is formed so as to penetrate the insulating layer 210 and the fourth transparent resin layer 202d. The common electrode 144a and the common wiring 144b are made of titanium (Ti) and aluminum (Al ), molybdenum (Mo), copper (Cu), and other metal materials.

[0104] The first insulating layer 210 is, for example, a first silicon nitride film from the fourth transparent resin layer 202d side. The second insulating layer 212 has a structure in which a first silicon oxide film 214a and a first silicon oxide film 215a are stacked. For example, from the side of the first oxide semiconductor layer 180a, the second silicon oxide film 215b and the second nitride film 215c are formed. The first oxide semiconductor layer 180a has a structure in which a first oxide semiconductor film 214b is stacked. The first oxide film 215a is provided in contact with the second silicon oxide film 215b. The upper and lower surfaces of the compound semiconductor layer 180a are in contact with the silicon oxide film, so that the oxide Defect formation is suppressed.

[0105] The first gate electrode 150 and the second gate electrode 151 are made of aluminum (Al), molybdenum (Mo), or the like. It uses metal materials such as molybdenum (Mo), tungsten (W), zirconium (Zr), and copper (Cu). The aluminum alloy is made of aluminum-neodymium alloy (AlNd). , aluminum-neodymium-nickel alloy (AlNdNi), aluminum-carbon Nickel alloy (AlCNi), copper-nickel alloy (CuNi), etc. can be used. For example, the first gate electrode 150 and the second gate electrode 151 may be made of aluminum (Al), molybdenum (Mo), or silicon (Si). Molybdenum-tungsten (MoW) alloy, molybdenum-titanium (MoTi) alloy, etc. is formed.

[0106] The select transistor 138 comprises a first gate electrode 152, a first insulating layer 210, a second oxide semiconductor layer 212, and a second insulating layer 214. It has a structure in which a conductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are stacked. The selection transistor 138 has a second oxide semiconductor layer 180b that is connected to the first gate electrode 152 and A channel is formed in the region overlapping with the second gate electrode 153. The first gate electrode 152 , and is provided in contact with the shield electrode 116 .

[0107] The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are connected to the first insulating layer 210. and the second oxide semiconductor layer 180b. The fourth metal oxide conductive layer 176d is provided in contact with the lower surface of the second oxide semiconductor layer 180b. The third metal oxide conductive layer 176c functions as a source region and a drain region. The fourth metal oxide conductive layer 176d is a layer formed by the first gate electrode 152 and the second gate electrode 153 in a plan view. The electrodes 153 are provided so as to sandwich the electrodes 153 from both sides.

[0108] The third metal oxide conductive layer 176c is provided in contact with the lower surface of the data signal line 108. The data signal line 108 is in direct contact with the third metal oxide conductive layer 176c, forming a contact hole. The contact area is increased compared to when the connection is made via a cable, and the contact resistance is reduced.

[0109] The drain wiring 173 is provided in contact with the upper surface of the fourth metal oxide conductive layer 176d. The oxide semiconductor layer 180b is formed on the fourth metal oxide conductive layer 176d and the drain wiring 173. The drain wiring 173 is provided to cover the second gate of the driving transistor 136. The seventh contact hole 168 is connected to the ground electrode 151 .

[0110] The capacitor element 140 shown in FIG. 16B includes a drain wiring 173, a fourth metal oxide conductive layer 176, and a d, in the region where the first insulating layer 210, the fourth transparent resin layer 202d, and the common wiring 144b overlap each other, The capacitor element 140 is formed by the fourth metal oxide conductive layer 176d and the drain wiring 173. forms one of the capacitance electrodes, and the common wiring 144b forms the other capacitance electrode. 140 is provided between the drain electrode of the selection transistor 138 and the common wiring 144b. can be.

[0111] The drive transistor 136 and the select transistor 138 are covered with a third insulating layer 216. The third insulating layer 216 is made of acrylic resin, polyimide resin, epoxy resin, or polysiloxane. The third insulating layer 216 is made of an organic resin material such as resin or polyamide resin. The drive transistor 136 and the select transistor 138 are formed from a resin composition. The third insulating layer 216 functions as a buried planarizing film. It may be formed of an inorganic insulating film such as a silicon film.

[0112] As shown in FIG. 16A, the EL element 142 is connected to the transparent resin substrate 200 side by a light emitting element corresponding to a cathode. The first electrode 220, the electron transport layer 222 (first electron transport layer 222a, second electron transport layer 22 2b), an electron injection layer 224, an emitting layer 226, a hole transport layer 228, a hole injection layer 230, and an anode. The EL element has a structure in which a second electrode 232 corresponding to the anode is laminated. A structure in which the hole transport layer, light emitting layer, electron transport layer, and cathode are stacked from the anode side is called a sequential stacking structure. The reverse stacking order is called a reverse stacking structure. The EL element 142 is classified as having an inverted stack structure.

[0113] The first electrode 220 is continuous with the first metal oxide conductive layer 176a and is connected to the first electron transport layer 222a. The first oxide semiconductor layer 180a has a structure that is continuous with the first oxide semiconductor layer 180a. This allows the drive transistor 136 and the EL element 142 to be connected without using a contact hole. The first electrode 220, which corresponds to the cathode, is formed on the first metal oxide conductive layer 17. The first electron transport layer 222a is made of the same metal oxide conductive material as the first oxide. It is formed of the same oxide semiconductor material as the oxide semiconductor layer 180a.

[0114] In the region where the EL element 142 is formed, the third insulating layer 216 and the second insulating layer 212 are provided with a third insulating layer. The third opening 234 allows the second electrode 220 to pass through the second opening 234. The upper surface of the first electron transport layer 222a is exposed. 2 electron transport layer 222b, electron injection layer 224, light emitting layer 226, hole transport layer 228, hole injection The first electrode 22 is laminated with the first electrode 230 and the second electrode 232 as an anode. The area where these lines overlap is the light-emitting area of ​​the EL element 142.

[0115] The first electrode 220 is provided with a first oxide semiconductor layer 180a formed in the same layer as the first oxide semiconductor layer 180a. The first electron transport layer 222a is provided. The first electron transport layer 222a has a band gap of 3.0e The second electron transport layer 222b has a conductivity of 0.5 V or more and is transparent to visible light. , Indium oxide, Zinc oxide, Gallium (Ga) oxide, Tin (Sn) oxide, Magnesium Magnesium (Mg) oxide, silicon (Si) oxide, hafnium (Hf) oxide, tantalum Metals containing one or more elements selected from Ta (Ta) oxide and niobium (Nb) oxide These metal oxide materials have a band gap of 3.0 eV or more. The second electron transport layer 222b has a thickness of 50 nm to 1000 nm and is transparent to visible light. In the EL element 142, the second electron transport layer 222b is formed to a thickness of about 100 nm. By providing this, a short circuit between the first electrode 220 and the second electrode 232 is prevented.

[0116] The carrier concentration of the second electron transport layer 222b is 1 / 2 times that of the first electron transport layer 222a. It is preferable that the ratio is 1 / 10 or less, and more preferably 1 / 100 or less. The carrier concentration of the electron transport layer 222b is 10 13 / cm 3 ~10 17 / cm 3 While The carrier concentration of the first electron transport layer 222a is 10 15 / cm 3 ~10 19 / cm 3 Example of The difference in carrier concentration between the two is one order of magnitude or more, preferably two orders of magnitude or more, as described above. The first electron transport layer 222a preferably has a carrier concentration of 10 15 / cm 3 ~10 19 / cm 3 By setting the range of This reduces the resistance loss and suppresses the increase in driving voltage. b is the carrier concentration of 10 20 / cm 3 In this case, the excited state in the light-emitting layer 226 On the other hand, when the carrier concentration of the second electron transport layer 222b is 10 13 / cm 3 If it is less than this, the number of carriers supplied to the light-emitting layer 226 will decrease, making it difficult to obtain sufficient brightness. In this way, the first electron transport layer 222a is in contact with the second electron transport layer 222b. By providing a layer with a different carrier concentration, the increase in driving voltage is prevented, and the EL element The light emitting efficiency of the element 142 can be improved.

[0117] The carrier concentration of the first electron transport layer 222a and the second electron transport layer 222b is The oxygen vacancies in the oxide semiconductor act as donors. Increasing the oxygen vacancy density in an oxide semiconductor increases the carrier concentration, When the density is reduced, the carrier concentration is reduced. Oxygen vacancies in oxide semiconductors are caused by, for example, hydrogen It can be increased by applying oxygen to the tissue, and decreased by supplying oxygen. This can be done.

[0118] In an EL device, the electron injection layer provides the energy required to inject electrons from the cathode to the electron transport layer. The electron injection layer 224 is used to reduce the barrier. The electron injection layer 224 is provided to facilitate the injection of electrons into the second electroluminescent layer 226. It is provided between the electron transport layer 222b and the light emitting layer 226.

[0119] The electron injection layer 224 is made of a material having a small work function. , C12A7(12CaO·7Al2O3) electride, Mg 0.3 Zn 0.7 O. Zn 0.7 Si 0.3 O x The electron injection layer 224 is formed of an oxide semiconductor material containing The electron injection layer 224 is formed to a thickness of 100 nm to 150 nm. The amount of electrons injected from the electron transport layer 222b into the light emitting layer 226 can be increased, and the light emitting efficiency can be improved. The rate can be increased.

[0120] The light-emitting layer 226 can be made of various light-emitting materials. materials, phosphorescent materials that emit phosphorescence, thermally activated delayed fluorescence (TADF) The light-emitting layer 226 is formed using a deposited fluorescence material. Materials having different luminescent colors are used corresponding to the plurality of sub-pixels 105. The light-emitting layer 22 has a structure in which a blue light-emitting layer and a yellow light-emitting layer are stacked. 6 is made by evaporation, transfer, spin coating, spray coating, gravure printing, etc. The thickness of the light-emitting layer 226 may be appropriately selected, but for example, it may be 10 nm. It is provided in the range of about 100 nm.

[0121] The hole transport layer 228 is made of, for example, an arylamine compound, an amine compound containing a carbazole group, or the like. The hole transport layer 228 is formed of a compound, an amine compound including a fluorene derivative, etc. The hole transport layer 228 is formed by a vacuum deposition method, a coating method, etc. When the hole injection layer 230 is formed, the hole transport layer 228 is omitted. This may be done.

[0122] The hole injection layer 230 may be formed of molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, or the like. The hole injection layer is formed using a metal oxide such as tin oxide or manganese oxide. 230 is phthalocyanine (HPc), copper(II) phthalocyanine (abbreviation: CuPc) , hexaazatriphenylene hexacarbonitrile (HAT-(CN)6) and other materials. The hole injection layer 230 is formed to a thickness of 1 nm to 100 nm.

[0123] The second electrode 232, which corresponds to the anode, is formed of a material having a work function of 4.0 eV or more. The second electrode 232 is preferably made of, for example, indium tin oxide (ITO), indium oxide, or the like. IZO, Tungsten Oxide (WO x ) and zinc oxide (ZnO)-containing oxide The EL element 142 is formed using a conductive metal oxide such as indium (IWZO). Since it is a Tom emission type, the second electrode 232 preferably has a light reflecting surface. The conductive metal oxides mentioned above are transparent, so aluminum (Al), silver (Ag It is preferable to form a light reflecting surface by laminating a metal film such as

[0124] Although not shown in FIGS. 16A and 16B, the intrusion of oxygen and moisture onto the EL element 142 A passivation film for blocking the above may be provided.

[0125] In this way, the sub-pixel 105 according to this embodiment includes an n-channel driving transistor 13 The EL element 142 is a bottom-emitting type. The EL element 142 is a polarized light emitting element and has a structure that emits light toward the shield electrode 116 side. Since the electron transport layer and the electron injection layer are made of inorganic metal oxide semiconductor materials, moisture (H2O) It has a structure that suppresses the deterioration of light-emitting properties due to oxygen (O2).

[0126] 17 is a planar layout diagram showing another configuration of the subpixel 105. The sub-pixel 105 is connected to the second gate electrode 153 of the selection transistor 138 and the scanning signal line 106a. The second auxiliary electrode 2 is formed on the second sensor electrode 114 using the same conductive layer. 17, the pattern of the second sensor electrode 114 is omitted, and the pattern of the second auxiliary electrode 07 is provided. The first light-shielding layer 208a and the second light-shielding layer 208b are formed by a second auxiliary It is formed from the same metal film as the electrode 207 and is provided on the second sensor electrode 114 .

[0127] FIG. 18 shows a planar layout of the sub-pixel 105, and is a diagram showing the driving circuit for the sub-pixel 105 shown in FIG. 1 shows a different embodiment of the connection structure between the driving transistor 136 and the common electrode 144a. 19A shows a cross-sectional structure corresponding to the line D5-D6 shown in FIG. 18, and FIG. 19B shows a cross-sectional structure corresponding to the line D7-D8 The cross-sectional structure corresponding to the line is shown.

[0128] As shown in FIGS. 18 and 19A, the source wiring 170 of the driving transistor 136 is The common electrode 144 is connected to the gate electrode 151 by a connecting wiring 172 formed of the same conductive layer as the gate electrode 151. The connection wiring 172 is connected to the eighth contact hole formed in the second insulating layer 212. The second insulating layer 212, the first insulating layer 210, and the source wiring 170 are connected by a wire 171. and a fifth contact hole 166 formed in the fourth transparent resin layer 202d, which allows the common electrode 1 Even with this connection structure, the first subpixel 44a shown in the equivalent circuit of FIG. The first subpixel 105r, the second subpixel 105g, and the third subpixel 105b can be realized by using the Cut.

[0129] FIG. 20 shows a planar layout of the subpixel 105, which is selected for the subpixel 105 shown in FIG. 1 shows a different connection structure between the select transistor 138 and the data signal line 108. 21A shows a cross-sectional structure corresponding to the line D9-D10 shown in FIG. 20, and FIG. 21B shows a cross-sectional structure corresponding to the line D11-D10 shown in FIG. The cross-sectional structure corresponding to the D12 line is shown.

[0130] As shown in FIGS. 20 and 21B, the source electrode 174 of the select transistor 138 is The gate electrode 153 is connected to the data signal line 108 formed of the same conductive layer. The wiring 108 is provided on the second insulating layer 212 and is connected to the wiring 108 via the ninth contact hole 175. The scanning signal line 106a is connected to the source electrode 174. The scanning signal line 106a is located below the first insulating layer 210. Therefore, even if the second insulating layer 212 is formed thin, the second gate The data signal line 108 provided in the same layer as the port electrode 153 crosses the scanning signal line 106a. Even if the wiring is provided in this manner, short circuits at the intersections can be prevented.

[0131] 1-6. Sealing structure FIG. 22A shows an example of a connection structure between first sensor electrode 112 and lead wiring 147. In FIG. The lead wire 147 is a wire that connects the first sensor electrode 112 and the second connection terminal 146b. The first sensor electrode 112 is connected to the lead wiring 147 in the outer region of the display unit 102. The lead wiring 147 is connected to the fourth transparent resin layer 202d in the same manner as the second connection terminal 146b. Similar to the structure shown in FIG. 5, the shield electrode 116 is provided on the second connection terminal 14. The second connection terminal 146b is provided so as to extend to the bottom of the upper side of the shield electrode 116. By providing the flexible circuit board 126 thereon, the flexible circuit board 126 can withstand the pressure bonding process when it is connected. This makes it possible to prevent the second connection terminal 146b from collapsing, deforming, and peeling off.

[0132] The shield electrode 116 has a first opening 158. The opening of the first opening 158 is A first contact hole 159 having a hole diameter smaller than the diameter of the first contact hole 159 is provided. The hole 159 is formed between the fourth transparent resin layer 202d, the third transparent resin layer 202c, and the second transparent resin layer 202d. The lead wire 14 penetrates the layer 202b, exposing the top surface of the first sensor electrode 112. 7 is a first sensor electrode extending from the second connection terminal 146b to the first contact hole 159. It is connected to pole 112.

[0133] On the fourth transparent resin layer 202d, a first insulating layer 210, a second insulating layer 212, and a third insulating layer 213 are formed. A third insulating layer 216 is provided. A second electrode 232 is provided on top of the third insulating layer 216. FIG. 2 shows a state in which a sealing layer 236 is provided on the upper layer side of the second electrode 232. Structure of the sealing layer 236 There are various types of silicon nitride film, for example, silicon carbon nitride film 237a, silicon nitride film 238, silicon The carbon nitride film 237b is laminated on the silicon nitride film 237c.

[0134] The lead wiring 147 extends from the area covered with the third insulating layer 216 and the sealing layer 236 to the outside (transparent The lead wire 146 extends to the end of the transparent resin substrate 200 and is connected to the second connection terminal 146b. The wiring 147 and the second connection terminal 146b are formed from the same conductive layer and are one continuous pattern. is formed.

[0135] FIG. 22A shows an embodiment in which a dividing region 240 is provided in the region near the end of the transparent resin substrate 200. The transparent resin substrate 200 is provided on a support substrate (not shown) during the manufacturing process. When the display panel is divided into individual panels, the display panel is divided at the division area 240. A continuous opening groove is formed so as to surround the panel. The opening groove is formed by, for example, laser processing. After the dividing region 240 is formed, the transparent resin substrate 200 is subjected to laser ablation. The film is peeled off from the support substrate by the process.

[0136] 22B shows that the shield electrode 116 extends to the area of ​​the second connection terminal 146b as shown in FIG. In this structure, the lead-out wiring 147 and the second connection terminal 146b are not extended. It is preferable that a first insulating layer 210 is provided on the lower side. The insulating layer 210, the fourth transparent resin layer 202d, the third transparent resin layer 202c, and the second transparent resin layer 202b is connected to the first sensor electrode 112 by a first contact hole 159 passing through the first sensor electrode 112. do.

[0137] Even if the shield electrode 116 is not provided below the second connection terminal 146b, the first insulating The layer 210 is provided to facilitate the pressure bonding process when connecting the flexible circuit board 126. Therefore, the second connection terminal 146b can be prevented from being depressed, deformed, or peeled off. Although not shown, the first insulating layer 210 and the shielding layer 212 are provided below the second connection terminal 146b. The same effect can be obtained even if both the electrode 116 and the gate electrode 116 are provided. Although not shown in FIGS. 22A and 22B, the structure of the first connection terminal 146a in the terminal portion is similar to that of the second connection terminal 146b. This is similar to the connection terminal 146b, and the same effect can be obtained.

[0138] 23A and 23B show a state in which the configuration of the second insulating layer 212 is different from that in FIGS. 22A and 22B. 23A and 23B, the parts different from those in FIGS. 22A and 22B are explained. The explanation will focus on minutes.

[0139] FIG. 23A shows a structure in which a shield electrode 116 is provided below the second connection terminal 146b. In addition, a second insulating layer 212 is provided on the lead-out wiring 147. The layer 212 covers the top and side surfaces of the lead-out wiring 147, and although not shown, In the region where the second insulating layer 247 is not provided, the second insulating layer 247 is provided in contact with the fourth transparent resin layer 202d. 12 is provided extending to the outside of the third insulating layer 216 (the side of the second connection terminal 146b). The second insulating layer 212 has a region that contacts the sealing layer 236 outside the third insulating layer 216 .

[0140] The second insulating layer 212 and the sealing layer 236 include an insulating film made of an inorganic insulating material. The second insulating layer 212 and the sealing layer 236 are provided in contact with each other on the outside of the third insulating layer 216. As shown in FIG. 16A, the EL element 142 is formed The layer that forms the insulating layer 216 is provided in contact with the third insulating layer 216. 16 is sandwiched between the second insulating layer 212 and the sealing layer 236, and the end of the third insulating layer 216 is The second insulating layer 212 and the sealing layer 236 are disposed inside the outer end portions of the EL element 1. Furthermore, the second insulating layer 212 can improve the performance of preventing deterioration of the lead wire 42. In addition, since it functions as a protective film for the wiring 147, it is possible to prevent deterioration and damage to the wiring. The other structures are the same as those in Fig. 22A, and similar effects can be obtained.

[0141] FIG. 23B shows a structure in which a first insulating layer 210 is provided under the second connection terminal 146b. In addition, the second insulating layer 212 is provided on the lead-out wiring 147. 23A, the sealing performance can be improved. Although not shown in FIG. 23B, the same effect can be obtained. The first insulating layer 210 and the shield electrode 116 are both provided on the lower layer side of the second connection terminal 146b. The same effect can be obtained even if

[0142] 24A and 24B show that the configurations of the first insulating layer 210 and the second insulating layer 212 are the same as those in FIGS. 23A and 23B. 24A and 24B are different from those in FIGS. 23A and 23B. The following description will focus on the differences from FIG. 23B.

[0143] 24A and 24B show a case where a shield electrode 116 is provided below the second connection terminal 146b. The first insulating layer 21 is formed under the lead-out wiring 147 and the second connection terminal 146b. The first insulating layer 210 and the second insulating layer 212 are provided. Since the flexible circuit board 12 is provided on the entire lower surface of the second connection terminal 146b, 6, and the second connection terminal 146b is not depressed, deformed, or and resistance to peeling can be improved.

[0144] In addition, in the region outside the third insulating layer 216, the sealing layer 236 contacts the lead wiring 147, and and the second insulating layer 212 (not shown), the sealing performance can be improved. This makes it possible to prevent the EL element 142 from deteriorating.

[0145] 25A and 25B differ from the configuration of the lead wiring 147 in FIGS. 22A and 22B. The difference between FIG. 25A and FIG. 25B is that the shield electrode 146b is located below the second connection terminal 146b. The explanation of Fig. 25A and Fig. 25B is based on Fig. 22A and Fig. 22B. The following will focus on the differences.

[0146] As shown in FIGS. 25A and 25B, the first sensor electrode 112 and the second connection terminal 146b The connection structure is a structure in which connections are made by a plurality of contact holes and a plurality of lead wirings. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, The first lead wiring 147a is connected to the first sensor electrode 112, and the third transparent resin layer 202c A contact hole 169b is formed in the second lead-out wiring 147b, and the second lead-out wiring 147b is connected to the first lead-out wiring 147b. 147a, and a contact hole 169c is formed in the fourth transparent resin layer 202d. The third lead-out wiring 147c is connected to the second lead-out wiring 147b.

[0147] A contact provided to connect the first lead wire 147a to the first sensor electrode 112 The hole 169a connects the second lead-out wiring 147b to the first lead-out wiring 147a. The position of the contact hole 169b for the second lead wiring 14 is different. the position of a contact hole 169b for connecting the first lead 147a to the first lead 147b; A contact hole for connecting the third lead-out wiring 147c to the second lead-out wiring 147b. In this way, the positions of the contact holes 169c are shifted. By providing the contact holes in this way, the depth of each contact hole can be made shallower, and the contact holes can be drawn out more easily. The wiring connection can be reliably formed.

[0148] The configurations shown in FIGS. 25A and 25B are similar to those shown in FIGS. 23A and 23B, 24A and 24B. This can be applied to the configuration shown.

[0149] 1-7. Flexible circuit boards and integrated circuits FIG. 26 shows a transparent resin substrate on which a display unit 102 and a touch and fingerprint sensor unit 110 are provided. 200 and the configuration of the flexible circuit board 126 on which the second drive circuit 128 is provided. show.

[0150] The flexible circuit board 126 has a third connection terminal 148 provided on the film substrate 127. a, the fourth connection terminal 148b, the fifth connection terminal 148c, the sixth connection terminal 149, and the wiring group 1 The wiring group 129 includes the third connection terminal 148a to the fifth connection terminal 148b. c and the second drive circuit 128, and between the second drive circuit 128 and the sixth connection terminal 149. The third connection terminal 148a is connected to the first connection terminal 146a on the transparent resin substrate 200 side. The fourth connection terminal 148b is connected to the second connection terminal 146b on the transparent resin substrate 200 side. The fifth connection terminal 148c is connected to the first drive circuit 118 on the transparent resin substrate 200 side. The sixth connection terminal 149 is connected to the display device with touch and fingerprint sensor 1. It is connected to an external circuit that drives 00.

[0151] As shown in FIG. 5, the second driving circuit 128 includes a first scanning signal line driving circuit block, a data A composite integrated circuit that integrates a signal line driver circuit block and a touch and fingerprint sensor detection circuit block. The second driving circuit 128 is mounted on the film substrate 127 by COF (Chip on Film). It is mounted on the surface of the

[0152] 27 shows a plan view of the flexible circuit board 126. The third connection terminal 148a is provided on the first side of the film substrate 127 made of polyimide or the like. A fourth connection terminal 148b and a fifth connection terminal 148c are provided on a second side opposite the first side. The sixth connection terminal 149 is provided on the side of the film substrate 127. The area where the second driving circuit 128 is mounted is indicated by a dotted line in FIG. .

[0153] The third connection terminal 148a, the fourth connection terminal 148b, and the fifth connection terminal 148c and the second drive A wiring group 129a is provided in the region between the second driving circuit 128 and the sixth connection A wiring group 129b is provided in the region between the connection terminals 149. The wiring extends from the sixth connection terminal 149 to the area where the pad 135 of the second driving circuit 128 is located. Each wire of the wiring group 129a is connected to the pad 1 of the second driving circuit 128. 35 is located in the area from the third connection terminal 148a, the fourth connection terminal 148b, and the fifth connection terminal The child has been drawn up to 148c.

[0154] The pads 135 of the second drive circuit 128 are provided corresponding to the functional blocks. The pads 135 of the second driving circuit 128 are connected to the scanning signal line driving circuit block 130 and the data signal line driving circuit block 132. The signal line driving circuit block 132 and the touch and fingerprint sensor detection circuit block 134 are connected to the , are arranged in the area of ​​each circuit block. The wiring and the pad 135 are connected by a conductive material. a, the fourth connection terminal 148b and the fifth connection terminal 148c, and the connection on the transparent resin substrate 200 side The connection with the terminal is also made by a conductive material.

[0155] 28 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in FIG. A flexible circuit board 126 is placed on the part 122, and a connection terminal is connected to the part 122 with a conductive material. The flexible circuit board 126 is provided on the terminal portion 122 of the transparent resin substrate 200. The third connection terminal 148 corresponds to the first connection terminal 146a and the second connection terminal 146b. As described with reference to FIG. 5, the first connection terminal 148a and the fourth connection terminal 148b are provided. The first connection terminal 146a is connected to the switching circuit 120, and the second connection terminal 146b is connected to the shield electrode 116. The first cell is connected to the first contact hole 159 formed in the region inside the first opening 158. The sensor electrode 112 is connected to the sensor electrode 112 .

[0156] The first connection terminal 146a and the third connection terminal 148a, and the second connection terminal 146b and the fourth connection terminal The first connection terminal 146a and the third connection terminal 148b are disposed opposite each other with a gap therebetween. At least one conductive particle 242 is provided between the at least one conductive particle 242 and the at least one conductive particle 242. The conductive particles 242 are deformed by pressure between the first connection terminal 146a and the third connection terminal 148a. At least one conductive particle 242 is held in a state where it is connected to the first connection terminal 146a and The first connection terminal 146a and the third connection terminal 148a are in contact with each other. , are electrically connected by at least one conductive particle 242. Conductive particles are also provided between the first connection terminal 148a and the fourth connection terminal 148b. Preferably, each conductive particle 242 is made up of a plurality of conductive particles.

[0157] The conductive particles 242 are dispersed in the resin 244 and are attached to the first connection terminal 146a (or In this state, the first connection terminal 146a and the third connection terminal 148a are The terminal 148a is placed opposite the conductive particles 242, and the distance between the two is narrowed to the extent that the conductive particles 242 are deformed by pressure. When the resin 244 is inserted, the conductive particles 242 protrude from the resin 244 and contact the first connection terminal 146a and the third connection terminal 146b. It can be in direct contact with the connecting terminal 148a.

[0158] It is preferable that a plurality of conductive particles 242 are contained in the resin 244. For example, It is preferable that one area of ​​the resin 244 contains 2 to 7 conductive particles 242. As a result, a plurality of conductive particles are formed between the first connection terminal 146a and the third connection terminal 148a. 242 is interposed, ensuring a reliable electrical connection.

[0159] As shown in FIG. 28, the resin 244 containing the plurality of conductive particles 242 is 6a and the third connection terminal 148a. Between the first connection terminal 146a and the third connection terminal 148a, conductive particles 242 are disposed. The number and positions of the first and third connection terminals 146a and 146b are controlled. The conductive particles 242 are arranged in a controlled manner in the region between the connecting terminals 148a and 148b. By doing so, it is possible to reliably form an electrical connection state and also to short-circuit adjacent connection terminals. This configuration can prevent the connection terminals from being connected to each other when the pitch between the connection terminals is narrow. This is effective in such cases.

[0160] The diameter of the conductive particles 242 is preferably in the range of 2 μm to 10 μm. If the size is as shown above, even if the pitch of the connection terminals is 30 μm or less, the adjacent connection terminals 28, the conductive particles 242 can be used to prevent short circuits between the electrodes. When the resin 244 is arranged so as to be dispersed at a plurality of locations between the connection terminals, the dispersed locations The distance between the conductive particles 242 is preferably 5 μm or more. The resin 244 containing the resin is formed so as not to protrude from the first connection terminal 146a and the third connection terminal 148a. This allows the distance between the first connection terminal 146a and the third connection terminal 148a to be kept constant. It is possible to do this.

[0161] The structure, shape, and material of the conductive particles 242 are not limited. For example, a highly hard resin material may be used. A particle core coated with a rubber-like elastic resin, or a particle core made of a highly hard inorganic material coated with a rubber-like inorganic elastic body. The particles were metal-coated particles coated with metals such as nickel (Ni), copper (Cu), and gold (Au). The shape of the conductive particles 242 is not limited to a spherical shape, but may be an elongated spheroid, a cone-shaped shape, or the like. may be.

[0162] The resin 244 is a curable resin material. The curable resin material includes a radical polymerization type resin. The radical polymerization type resin material is a (meth)acrylic monomer or a (meth)acrylic It is preferably a ester oligomer, and more preferably one bonded in an ester form. The (meth)acrylic oligomer has at least one (meth)acryloyl group. For example, epoxy acrylate, urethane acrylate, polyester acrylate acrylate, polybutadiene acrylate, polyol acrylate, polyether acrylate Examples of the resin that can be used include silicone resin acrylate, silicone resin acrylate, and melamine acrylate. The polymer may be either monofunctional or polyfunctional, but preferably contains polyfunctional monomers or oligomers. The curable resin material is preferably a (meth)acrylate monomer and a (meth)acrylate copolymer. It may be configured by selecting two or more types of oligomers.

[0163] Although not shown, a second resin may be provided around the resin 244. A curable resin material is used. As the curable resin material, fluorene acrylate is used. and allyl ether groups, vinyl ether groups, acrylate groups and methacrylate groups. an ene compound having two or more functional groups selected from the group consisting of acrylate groups in the molecule, or Ene compounds which are mixtures of two or more of the above ene compounds, and compounds containing two or more thiol groups in one molecule An ene / thiol-based curable resin containing a thiol compound having an aryl group is treated with an oxidizing compound. The product obtained by the above method may also be used.

[0164] The resin 244 and the second resin further include a photo-curing initiation component. A radical initiator that generates radicals when irradiated with ultraviolet or visible light. Any compound may be used. Examples of ultraviolet radical initiators include acetophenone-based initiators. , benzoin ether initiators, benzophenone initiators, α-diketone initiators, and Thioxanthone initiators and the like can be used.

[0165] The resin 244 containing the conductive particles 242 is printed on the first connection terminal 146a (or the third connection terminal 146b) by a printing method. The printing method can be offset printing. Since the resin 244 corresponding to the ink contains the conductive particles 242, the offset printing can be performed. Among the printing methods, it is preferable to use pad printing using an intaglio plate.

[0166] The resin 244 containing the conductive particles 242 is printed on the first connection terminal 146a (or the third connection terminal 146b) by a printing method. 148a) to connect the flexible circuit board 126 to the transparent resin substrate 200. Therefore, even if the connection terminals are miniaturized and the pitch is narrowed, accurate connection is possible. The display device 100 with a touch and fingerprint sensor according to the present embodiment includes a touch and fingerprint sensor unit 110 The first sensor electrode 112 is miniaturized, so that the connection terminal for extracting the sensor signal As shown in FIG. 26, the terminal section 122 includes a display section 102 for displaying an image. The connection terminal for inputting a signal for the touch sensor unit 110 and the connection terminal for the fingerprint sensor unit 110 are the same. Even if the pitch is narrowed by including the conductive particles 242 in the array, the resin containing the conductive particles 242 244 to connect to the flexible circuit board 126, 126 can be attached to the terminal portion 122 to form an electrical connection.

[0167] 29 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in FIG. A flexible circuit board 126 is placed on the part 122, and a connection terminal is connected to the part 122 with a conductive material. 29 shows a state in which one first sensor electrode 112 is provided for two columns of pixels 104. Therefore, a first connection terminal provided in the terminal portion 122 and connected to the switching circuit 120 is provided. The terminal 146a and the third connection terminal 148a provided on the flexible circuit board 126 are adjacent to each other. Even with such an arrangement of the connection terminals, the first connection terminal 146a and the third connection terminal When connecting the connecting terminal 148a, the conductive particles dispersed in the resin 244 in a controlled number are By using the conductive particles 242, short circuits between adjacent terminals can be prevented.

[0168] FIG. 30 shows a second driving circuit 128 configured as a composite integrated circuit in which multiple functions are integrated. The display device 100 with a touch and fingerprint sensor according to this embodiment is not limited to this example. 30, the driver IC 125a that drives the display unit 102 and the touch and The driver IC 125b that drives the fingerprint sensor is formed on a separate IC chip. The power supply 122 may be mounted on a cable circuit board 126.

[0169] FIG. 31 shows a driver IC 125a that drives the display unit 102 and a touch and fingerprint sensor. 1 shows a plan view of a flexible circuit board 126 on which a driver IC 125b is mounted. The wiring through which the signal of the first sensor electrode 112 is output is connected to the driver IC 12 that drives the display unit. 5a and reaches the driver IC 125b that drives the touch and fingerprint sensor. The driver IC 125a that drives the display unit is connected to the sixth connection terminal 149. The wiring passes through the area of ​​the driver IC 125b that drives the touch and fingerprint sensor. It is disposed so as to reach the connection terminal 149 .

[0170] The driver IC 125a that drives the display unit is connected to the scanning signal line driving circuit block 130 and the data The signal line driving circuit block 132 may be partitioned into a plurality of signal line driving circuit blocks 132. In this embodiment, as shown in FIG. In this way, the first drive circuit 118 serves as both a scanning signal line drive circuit and a drive circuit for the second sensor electrode 114. The first driving circuit 118 receives a signal for driving the scanning signal line and a signal for driving the display unit. The signal output from the driver IC 125a to control the driving of the second sensor electrode is It is output from the driver IC 125b that drives the fingerprint sensor.

[0171] As shown in Figures 30 and 31, the driver IC that drives the display and the touch and fingerprint sensor are Even if the driver IC that drives the sub-unit is provided separately, the wiring structure can be changed. This allows two driver ICs to be mounted on the flexible circuit board 126.

[0172] According to the display device with a touch and fingerprint sensor of this embodiment, the data signal line is switched. By connecting to the circuit, the number of connection terminals is reduced even when a touch sensor and fingerprint sensor are installed. In other words, by connecting the data signal line to the switching circuit, the first Even if the sensor electrodes (receiver electrodes) are arranged at high density, the increase in the number of connection terminals can be suppressed. As a result, poor connection between the terminals and the flexible circuit board can be reduced. .

[0173] According to the display device with a touch and fingerprint sensor of this embodiment, the touch and fingerprint sensor The second sensor electrode (transmitter electrode) of the display unit 110 is connected to the scanning signal line of the display unit 102. By doing so, the scanning signal lines of the display unit 102 are used as auxiliary electrodes that reduce the resistance of the second sensor electrodes. In addition, the scanning signal line is provided in contact with the second sensor electrode, and the second gate electrode is provided in contact with the second sensor electrode. The electrodes and the scanning signal lines are connected through contact holes, making the second gate insulating layer thinner. Even if the transistor (thin film transistor) is used, a short circuit between the data signal line and the scanning signal line can be prevented. The driving capability of the second sensor electrode (transistor) can be improved. By forming a metal layer in contact with the transistor, the metal layer forms a light-shielding layer for the transistor. It is possible.

[0174] [Second embodiment] FIG. 32 shows a display section 102 in which pixels 104 are arranged, a first sensor electrode 112, and a second sensor electrode 113. The touch and fingerprint sensor unit 110 includes a first driving circuit 118 and a switching circuit 119. A touch and fingerprint sensor having a circuit 120, a terminal portion 122, and a flexible circuit board 126. The display device 100 includes a first driver circuit 118 that applies scanning signals to the scanning signal lines and a second driver circuit 118 that applies scanning signals to the scanning signal lines. a scanning signal line driving circuit 118a that outputs a scanning signal to the sensor electrode 114; and an output switching circuit 118b that switches the connection with the sensor electrode 114.

[0175] The second driving circuit 128 is an integrated circuit of circuit blocks having different functions, similar to the first embodiment. The scanning signal line driver circuit 118a and the output switch circuit 118b may be formed as a composite integrated circuit. The control signal for the switching circuit 118b is output from the scanning signal line driving circuit block 130.

[0176] FIG. 33 shows the arrangement of the output switching circuit 118b corresponding to the arrangement of the second sensor electrodes 114 shown in FIG. An example is shown below. The output switching circuit 118b switches the output of the first driving circuit 118 to the scanning signal line ( The first switching element 141_1 connected to the second sensor electrode 114 (SC_ The first switching element 141 includes a second switching element 145_1 connected to the first switching element 141. The scanning signal lines (G_1 to G_1) and the second switching element 145_1 are connected in parallel. n), first switching elements 141_1 to 141_n are provided, and second sensor electrodes 114 (SC_1 to SC_n), second switching elements 145_1 to 145_n are provided. The first switching element 141_1 and the second switching element 145_1 are transistors. The gates for controlling ON / OFF are connected to the first output switching signal line 143a and the second output The first output switching signal line 143a and the second output switching signal line 143b are connected to the first output switching signal line 143a and the second output switching signal line 143b. The line 143b is connected to the second driving circuit 128, and the scanning signal line driving circuit block 130 The on / off state is controlled by a control signal output from the

[0177] During the display period, the first switching element 143 is turned on by the control signal of the first output switching signal line 143a. The output terminals 141_1 to 141_n are turned on, and the output terminals 141_1 to 141_n are turned on by the control signal of the second output switching signal line 143b. The second switching elements 145_1 to 145_n are turned off, and the scanning signal lines (G_1 to G_ During the sensing period, scanning signals are sequentially output to the first output switching signal line 14 The first switching elements 141_1 to 141_n are turned off by the control signal 3a, and the second switching elements 141_1 to 141_n are turned off by the control signal 3a. The second switching elements 145_1 to 145_n are controlled by a control signal from the output switching signal line 143b. is turned on, and scan signals are sequentially output to the second sensor electrodes 114 (SC_1 to SC_n). In this way, the first driving circuit 118 controls the first switching elements 141_1 to 141_1. _n and the second switching elements 145_1 to 145_n, the scanning signal lines (G_1 to G _n) and the second sensor electrodes 114 (SC_1 to SC_n) are switched to display A scanning signal line driving circuit for driving the touch sensor unit 102 and a scanning circuit for the touch and fingerprint sensor unit 110 It is possible to standardize the above.

[0178] FIG. 34 shows the configuration of the switching circuit 118b corresponding to the arrangement of the second sensor electrodes 114 shown in FIG. FIG. 10 shows a configuration in which one second sensor electrode 114 is arranged for two rows of pixels 104. Therefore, the number of second sensor electrodes 114 is half the number of scanning signal lines. The switching circuit 118b is connected to the scanning signal line (G_1) for the output of the first driving circuit 118. The first switching element 141_1 is connected to the second sensor electrode 114 (SC_1). a circuit in which the second switching element 145_1 is provided in parallel, and a second scanning signal line (G_2 ) and a circuit having only the first switching element 141_2 connected to the first switching element 141_2 are alternately arranged. The configuration of the switching circuit 118b shown in FIG. _n) and the second sensor electrodes 114 (SC_1 to SC_(n+1) / 2) are switched and touched. The display device 100 with a switch and fingerprint sensor can be driven.

[0179] The display device with a touch and fingerprint sensor shown in FIG. 32 has a different configuration of the first drive circuit 118. Other than that, it is the same as the display device with a touch and fingerprint sensor shown in the first embodiment, and has the same function. The effect can be obtained.

[0180] [Third embodiment] In contrast to the first embodiment, this embodiment has a scanning signal and a driving circuit for outputting the scanning signal. An example of a display device with a touch and fingerprint sensor having a different configuration is shown below. In this regard, the following description will focus on the differences from the first embodiment.

[0181] FIG. 35 shows a display section 102 in which pixels 104 are arranged, a first sensor electrode 112, and a second sensor electrode 113. The touch and fingerprint sensor unit 110 includes a first driving circuit 118 and a switching circuit 119. A touch and fingerprint sensor having a circuit 120, a terminal portion 122, and a flexible circuit board 126. The display device 100 includes a first driving circuit 118 that outputs scanning signals to the scanning signal lines. The scanning signal line driving circuit 118c and the scanning signal line driving circuit 118d output a scanning signal to the second sensor electrode 114. The circuit 118c is divided into two circuit blocks, circuit 118d.

[0182] The second driving circuit 128 is an integrated circuit of circuit blocks having different functions, similar to the first embodiment. The scanning signal line driving circuit 11 of the display unit 102 may be formed of a composite integrated circuit. 8c and the control signal to the scan circuit 118d of the touch and fingerprint sensor unit 110 is a scan signal It is output from the line driver circuit block 130.

[0183] The display device 100 with a touch and fingerprint sensor shown in FIG. c and scan circuit 118d are formed by two independent circuit blocks. Image display and touch and fingerprint sensor sensing can be performed simultaneously.

[0184] FIG. 36A shows a plan view of the second sensor electrode 114 corresponding to the configuration shown in FIG. 6B also shows the scanning signal line 106 provided on the second sensor electrode 114, the selection transistor The dashed line indicates the star 138. FIG. 36B shows a cross-sectional structure corresponding to the section C7-C8 shown in FIG. 36A. 36C shows the cross-sectional structure corresponding to the section C9-C10.

[0185] As shown in FIG. 36A, the second sensor electrode 114 comprises a second sensor electrode layer 206 and a second auxiliary electrode layer 208. As shown in FIG. 36B, the second sensor electrode 114 and the scanning signal line 1 Between the fourth transparent resin layer 202d, the first insulating layer 210, and the second insulating layer 212 are With this wiring structure, the second sensor electrode 114 The scan signal for the scanning signal line 106 and the scan signal for the scanning signal line 107 can be input simultaneously. That is, the display device with touch and fingerprint sensor 100 can detect a fingerprint while displaying an image. Detection of the above can be performed.

[0186] FIG. 37 is a timing chart of the display device 100 with a touch and fingerprint sensor shown in FIG. As shown in FIG. 37, the display device 1 with the touch and fingerprint sensor according to this embodiment 00 appears at the same timing during the display period and the sensing period. In the display device 100 with a switch and fingerprint sensor, the first drive circuit 118 controls the The scanning signal line driving circuit 118c and the scan circuit 118d of the touch and fingerprint sensor unit 110 is provided as an independent circuit block, and the second driving circuit 128 outputs a data signal The line driver circuit block 132 and the touch and fingerprint sensor detection circuit block 134 are also independent circuits. Since it is made up of road blocks, it is possible to display images and perform sensing simultaneously. .

[0187] According to the display device 100 with a touch and fingerprint sensor according to this embodiment, for example, Touch or fingerprint sensing can be performed while displaying. Other configurations are the same as those of the first embodiment. The present invention is the same as the display device with touch and fingerprint sensor in the prior art, and can achieve the same effects. Cut.

[0188] [Fourth embodiment] In this embodiment, the display device 100 with the touch and fingerprint sensor shown in the first embodiment has the following features: Part of the transparent resin substrate 200 is replaced with ultra-thin tempered glass (Ultra-Thin Glass: UTG). An example will be described.

[0189] FIG. 38 shows a touch and fingerprint sensor in which ultra-thin tempered glass is used in part of the transparent resin substrate 200. 1 shows a sensor-equipped display device 100. Specifically, the transparent resin substrate 200 according to this embodiment is In the structure of the transparent resin substrate 200 shown in FIGS. 16A and 16B, the first transparent resin layer 202a The thickness of the ultra-thin tempered glass that can be applied is 25μm~50μm. As shown in FIG. 38, the transparent resin substrate 20 according to this embodiment has a thickness of 30 μm. To prevent breakage, the four corners of the 0 are rounded with a radius (R) of 2mm to 5mm. The ultra-thin tempered glass is bendable, and such a transparent resin substrate 200 The display device 100 with touch and fingerprint sensor used is a foldable display screen. It can be applied to child devices (for example, smartphones, tablet terminals, etc.). The configuration according to this embodiment is the same as that of the second and third embodiments, except that it has a touch and fingerprint sensor. The present invention can be applied to a display device.

[0190] [Fifth embodiment] In this embodiment, a chip-on-plastic (Chip On Plastic) mounting method is used for the driver circuit. An example of a display device with a touch and fingerprint sensor that uses a mounting method using COP (plastic:COP) is shown below. show.

[0191] FIG. 39 shows a touch and fingerprint sensor in which ultra-thin tempered glass is used in part of the transparent resin substrate 200. The sensor-equipped display device 100 includes a display unit 102, a touch and fingerprint sensor unit 110, a first The drive circuit 118, the switching circuit 120, the terminal portion 122, and the transparent resin substrate 200 are On the other hand, in this embodiment, the second driving circuit 128 is transparent. The difference is that it is mounted on a resin substrate 200 .

[0192] Similar to the transparent resin substrate shown in the fourth embodiment, the transparent resin substrate 200 of this embodiment also has four The corners are rounded to a radius (R) of 2 mm to 5 mm. When using thin tempered glass, the corner shape makes it difficult to assemble the glass during assembly. This prevents damage to the four corners and improves yield.

[0193] FIG. 40 shows the cross-sectional structure of the area where the second drive circuit 128 is mounted and the terminal portion 122. The second driving circuit 128 includes a first pad 135a and a second pad 135b. 35a is connected to the first connection terminal 146a via the conductive particles 242, and the second pad 135 b is connected to the second connection terminal 146b via the conductive particles 242. can be mounted on the transparent resin substrate 200 by adopting a non-heating room temperature pressure mounting technique. The conductive particles 242 are dispersed in a resin 244, the details of which will be explained in detail in the description of FIG. As detailed above.

[0194] The terminal portion 122 is provided outside the area where the second drive circuit 128 is mounted. The shield electrode 116 and the first insulating layer 210 are disposed at the edge of the area where the second drive circuit 128 is mounted. The structure shown is extended to the area of ​​the second drive circuit 122. The rigidity of the area where the circuit 128 is mounted can be increased, and deformation and peeling of the connection terminal can be prevented. This makes it possible to improve the yield of the process of connecting the second driving circuit 128. In addition, the fourth transparent resin layer 202d is made of a para-polyamide resin having high rigidity. and even more preferable.

[0195] As shown in FIGS. 39 and 40, the second driving circuit 128 is mounted on the transparent resin substrate 200 by CPO. By implementing the above, the display device 100 with the touch and fingerprint sensor can be realized. The display device 100 with a touch and fingerprint sensor according to this embodiment includes a second driving circuit 12 8 is mounted on the transparent resin substrate 200, the flexible circuit board is omitted, The number of items and manufacturing processes can be reduced.

[0196] [Sixth embodiment] In this embodiment, the circuit configuration of the pixel 104 is different from that of the first embodiment. 1 shows the configuration of a display device 100 with a fingerprint sensor.

[0197] FIG. 41 is an example of an equivalent circuit of the pixel 104, which is an example of a pixel circuit of a voltage writing system. As described in the first embodiment, the pixel 104 includes a first subpixel 105r and a second subpixel 41 includes the first subpixel 105r and the second subpixel 105g. The pixel 104 has a column of first sub-pixels 105r, a column of second sub-pixels 105g, and ... second sub-pixels 105g. A column of the first sub-pixels 105a and a column of the third sub-pixels 105b are arranged in a stripe pattern.

[0198] The first subpixel 105r includes a driving transistor 136r, a selection transistor 138r, a capacitor The second subpixel 105g includes a driving transistor 140r and an EL element 142r. 136g, a selection transistor 138g, a capacitance element 140g, and an EL element 142g. The selection transistor 138r of the first subpixel 105r has a second gate electrode connected to the scanning signal line 10 6 (GBn) and the source side is connected to the data signal line 108 (Dm). The selection transistor 138g of the element 105g has a second gate electrode connected to the scanning signal line 136 (GAn ) and the source side is connected to the data signal line 108 (Dm+1). The selection transistor 138b of the element 105b has a second gate electrode connected to the scanning signal line 136 (GBn ) and the source side is connected to the data signal line 108 (Dm+1). In the pixel circuit according to the embodiment, the second gate electrodes of the selection transistors of adjacent subpixels are different. The pixel electrodes are connected to the scanning signal lines, and the source side is connected to the same data signal line. In addition, in the pixel 104, the common wiring 144 is connected to the column Lr of the first subpixel 105r and the column Lr of the second subpixel 10 5g and column Lg.

[0199] FIG. 42 shows a timing chart for driving the pixel 104 shown in FIG. 2 indicates that the scanning signal of the scanning signal line 106 (GAn) is -1 So it's low level (L level) The select transistor 138g transitions from the high level to the high level (H level) and turns on. A data signal is input to the data signal line 108 (Dm+1) and the second subpixel 105g is decoded. At time t0, the scan signal transitions to the L level, and the select transistor 138g is turned off, and at the same time, the scanning signal of the scanning signal line 106 (GBn) becomes low level ( The select transistor 138r and the select transistor 138r change from a low level (L level) to a high level (H level). The transistor 138b is turned on, and in synchronization with this, the data signal line 108 (Dm) and the data A data signal is input to the data signal line 108(Dm+1), and the first subpixel 108r and the third subpixel Data is written to 108b, and at time t1, the scanning signal transitions to the L level, causing the selection transistor 14 shows the operation in which the select transistor 138r and the select transistor 1438b are turned off.

[0200] In this way, adjacent subpixels (the first subpixel 105r and the second subpixel 105g, The selection transistors of the third subpixel 105g and the third subpixel 105b are connected to different scanning signal lines. As a result, data is transferred between adjacent subpixels (for example, the second subpixel 105b and the third subpixel 105b). The data signal line 108 (Dm+1) is shared, and data is written at different timings. Such a pixel circuit configuration makes it possible to reduce the number of data signal lines. That is, the number of connection terminals in the terminal section 122 can be reduced.

[0201] FIG. 43 is an example of an equivalent circuit of the pixel 104, which is an example of a pixel circuit of a current writing type. The pixel 104 includes a first subpixel 105r, a second subpixel 105g, and a third subpixel 105b. 43 shows the configuration of the first subpixel 105r and the second subpixel 105g in detail.

[0202] The first subpixel 105r includes a first transistor 138r (selection transistor), a second transistor a driving transistor 136r, a light-emitting control transistor 137r, and a capacitance element The first transistor 138r and the second transistor 140r are included. The second gate electrode of the transistor 139r is connected to the scanning signal line 106 (GBn) and the source side is connected to the data line. The drain side of the first transistor 138r is connected to the driving signal line 108 (Dm). The second gate electrode of the transistor 136 is connected to the capacitor element 140, and a data signal is written to the second gate electrode of the transistor 136. The second transistor 139r is used to control the timing of the driving transistor. The drain of the first transistor 136 is connected to the drain of the second transistor 138r, and is turned on and off at the same timing as the first transistor 138r. The operation of the drive transistor 136r is controlled and provided to compensate for the threshold voltage of the drive transistor 136r. The light-emitting control transistor 137r is connected between the EL element 142r and the drive transistor 136r. The second gate is connected to the second scanning signal line 107 (En). The second sub-pixel 105g has a similar configuration.

[0203] A second capacitance element is provided between the second scanning signal line 107 and the drain of the first transistor 138r. By providing the second capacitance element 274r, the first transistor When the resistor 138r falls, the capacitance Cgd between the gate and drain changes. The voltage of the element 140r can be prevented from fluctuating by ΔVgd.

[0204] Although not shown, the first sub-pixel 105r has a similar configuration to the column Lr of the first sub-pixel 105r. The source side of the first transistor and the source side of the second transistor are connected to the data signal line 108 (Dm+1), The second gate electrode of the light emission control transistor is connected to the scanning signal line 106 (GBn). The gate electrode has a column of third sub-pixels 105b connected to the second scanning signal line 107 (En). .

[0205] FIG. 44 shows a timing chart for driving the pixel 104 shown in FIG. 4 indicates that the scanning signal of the scanning signal line 106 (GAn) changes from low level (L level) at time t0. The first transistor 138g and the second transistor 13 9g turns on, and in synchronization with this, a data signal is input to the data signal line 108 (Dm+1). The data is written to the second subpixel 105g, and the threshold of the driving transistor 136g is set. At time t1, the scanning signal of the scanning signal line 106 (GAn) is changes to the L level, and the first transistor 138g and the second transistor 139g are turned off. At the same time, the scanning signal of the scanning signal line 106 (GBn) becomes low level (L level) at time t1. ) to a high level (H level), and the first transistor 138r and the second transistor The data signal is input to the data signal line 108 (Dm) in synchronization with this. The first subpixel 108r is driven to write data and drive the threshold voltage of the driving transistor 136r. During such a data writing period, the second scanning signal line 107(En) is at L level, and the light emission control transistors 137r and 137g are on. It is written as "fu".

[0206] When the data writing period ends, the light emitting period begins. 07 changes from L level to H level, a light emission signal is input, and the light emission control transistor 13 As a result, the first subpixel 105r and the second subpixel 108g are turned on. A current corresponding to the drain current of the driving transistors 136r and 136g flows through the EL element 142. r, 142g and emits light.

[0207] The selection transistors of adjacent subpixels (the first subpixel 105r and the second subpixel 105g) are different. By connecting the data signal lines 108 to the scanning signal lines 109, the number of data signal lines 108 can be reduced. The number of connection terminals in the terminal section 122 can be reduced.

[0208] FIG. 47 shows the layout of the data signal lines 108 and the common wiring 144 shown in FIGS. The data signal line 108 is provided above the fourth transparent resin layer 202d, The common wiring 144 is between the third transparent resin layer 202c and the fourth transparent resin layer 202d, The shield electrode 116 is formed of a transparent conductive film. On the other hand, the common wiring 144 is formed of a metal film. The shield electrode 116 is provided in a loop-shaped pattern so as to extend from one end to the other end. As a result, the resistance of the shield electrode 116 can be reduced.

[0209] FIG. 46 shows a transparent resin substrate 200 according to this embodiment in which ultra-thin tempered glass is used in part. 46 shows a display device 100 with a touch and fingerprint sensor. The display device 100 with a built-in LED is not provided with the switching circuit 120, and the third connection terminal 148a and The configuration is the same as that shown in FIG. 39 except for the configuration of the second scanning signal line driving circuit 118e. Has.

[0210] In the second driving circuit 128, the third driving circuit provided in the data signal line driving circuit block 132 The connection terminal 148a is connected to the data signal line 108, and the data is transmitted without going through a switching circuit. A signal is output to each pixel 104 of the display unit 102. As shown in FIGS. The number of signal lines 108 is arranged so as to be shared by adjacent pixel columns. The number of terminals 148a is reduced compared to the conventional case.

[0211] FIG. 45 shows details of the connection between the transparent resin substrate 200 and the second drive circuit 128. The resin substrate 200 is provided with a first connection terminal 146a and a second connection terminal 146b. The terminal 146a is connected to the data signal line 108, and the second connection terminal 146b is connected to the first sensor electrode The third connection terminal 148a of the second drive circuit 128 is connected to the first connection terminal 146. a, and the fourth terminal 148b is connected to the second connection terminal 146b. Conductive particles 242 dispersed in 244 are used. The details of the connection structure are shown in FIG. The structure is similar.

[0212] According to this embodiment, the display unit 102 has pixels corresponding to each color arranged in a stripe pattern. In the case where the pixel circuits are arranged such that adjacent pixel columns share the data signal line 108, By providing the above, the number of data signal lines 108 can be reduced, and the switching circuit 120 can be omitted. Even if the number of connection terminals is small, the number of connection terminals can be reduced.

[0213] [Seventh embodiment] In this embodiment, the layout of each element constituting the voltage write type pixel 104 shown in FIG. An example of this is shown below.

[0214] FIG. 48 shows an example of the layout of the first subpixel 105r and the second subpixel 105g. The subpixel 105r includes a first transistor 138r, a second transistor 139r, a driving transistor 138r, a a light-emitting control transistor 137r, and a capacitance element 140r. The element 105g includes a first transistor 138g, a second transistor 139g, a driving transistor The light emitting element includes a capacitor 136g, a light emitting control transistor 137g, and a capacitance element 140g. The layers constituting the electrodes 142r and 142g are omitted. The first sensor electrode 114 and the second sensor electrode 114 are also omitted.

[0215] Focusing on the first subpixel 105r, the first transistor 138r has a first oxide semiconductor layer 180a, a third metal oxide conductive layer 176c forming the source, and a fourth metal oxide conductive layer 176b forming the drain. The metal oxide conductive layer 176d is stacked with the first scanning signal line 106 (GBn) and forms the first transistor. A second gate electrode 153 formed of a transparent conductive film extending to the region of the gate electrode 138r is provided. The insulating layer 212 is laminated on the substrate 100 via a second insulating layer 212 (not shown). The first gate electrode 152 formed by the field electrode 116 has a stacked structure. The first gate electrode 152 is provided below the first oxide semiconductor layer 180a, and the second gate electrode The top electrode 153 is provided on the upper layer.

[0216] The second transistor 139r has a configuration similar to that of the first transistor 138r. The fifth metal oxide conductive layer 176e forming the gate is connected to the second metal oxide conductive layer 176f forming the driving transistor 136r. It has a configuration in which it is connected to the metal oxide conductive layer 176a.

[0217] The driving transistor 136r includes a first oxide semiconductor layer 180a, a first metal oxide conductive layer 1 76a and the second metal oxide conductive layer 176b. The second gate electrode 151 is provided. The capacitor element 140r is formed in the region where the conductive layer 176b overlaps.

[0218] The light-emitting control transistor 137r includes a first oxide semiconductor layer 180a, a first metal oxide conductive layer 180b, and a second metal oxide conductive layer 180c. a sixth metal oxide conductive layer 176f connected to layer 176a, the sixth metal oxide conductive layer 176f being spaced apart from the conductive layer; a seventh metal oxide conductive layer 176g overlapping the two metal oxide conductive layers and The scanning signal line 107 (En) is formed in an area overlapping the light emission control transistor 137r. The second gate electrode 268 is formed by the shield electrode 116 (not shown). The first gate electrode (266) is laminated. 142r is connected to the light-emitting control transistor 137r through the eighth contact hole 264. will be done.

[0219] The second subpixel 105g has a similar configuration, and the first subpixel 105r is connected to the common wiring 144. The layout is inverted in both the vertical and horizontal directions.

[0220] FIG. 49 shows a partial cross-sectional structure of the first subpixel 105r, and mainly shows the structure described in FIG. 1 shows the cross-sectional structures of a light-emitting control transistor 137r, a capacitance element 140r, and an EL element 142r. As shown in FIG. 49, the light-emitting control transistor 137r includes a sixth metal oxide conductive layer 176 f and the second metal oxide conductive layer 176g are connected to the first insulating layer 210 and the first oxide semiconductor layer 180. a, and the first gate electrode 248 is formed in the same layer as the shield electrode 116, The second gate electrode 250 (second scanning signal line 107) is connected to the first oxide film 212 via the second insulating layer 212. The capacitor element 140r is provided so as to overlap the semiconductor layer 180a. The transparent conductive film and the second metal oxide conductive film that form the second gate electrode 151 overlap each other with the gate electrode 12 sandwiched therebetween. The second metal oxide conductive layer 176b is formed by the fifth contact hole. The EL element 142r is connected to the shield electrode 116 by a cable 166. From the first electrode 220 (cathode) side, an electron transport layer 222, an electron injection layer 224, and an emitting layer 226 , an electron blocking layer 227, a hole transport layer 228, a hole injection layer 230, and a second electrode 232. The light-emitting control transistor 137r and other elements are covered with a planarization layer 246. A passivation layer 248 is provided on the EL element 142r. It can be done.

[0221] FIG. 50 shows the planar layout of the EL element 142 and cross sections between E1 and E2 and between E3 and E4. The first electrode 220 has a peripheral portion covered with a partition wall 262. The eighth contact hole 264 connected to the light-emitting control transistor 137 is also formed by the partition wall 262. When the electron transport layer 222 is formed of a coating material, the electron The transport layer 222 is provided on the upper surface of the first electrode 220 in an area surrounded by the partition wall 262. Electron injection layer 224, electron blocking layer 227, hole transport layer 228, hole injection layer 230 When the insulating film 262 is formed by the vapor deposition method, it is provided so as to cover the partition wall 262 and to extend over the entire display section 102. The light-emitting layer 226 is formed by using a shadow mask during vapor deposition, and is then placed over the opening of the partition wall 262. The light-emitting layer 226 is formed by ink-jet coating, gravure offset printing, or the like. It is also possible to form it by using a dot printing method or the like.

[0222] As is clear from FIGS. 48 and 50, the EL element 142 and the first transistor 138, a second transistor 139, a driving transistor 136, and a light-emitting control transistor The gates of these transistors that form the pixel circuit are arranged so as to overlap with each other. The electrodes, source and drain electrodes, and oxide semiconductor layer are made of transparent materials that transmit visible light. Therefore, even if the EL element 142 is a bottom emission type, the transparent resin substrate 200 Light can be emitted to the outside through this.

[0223] [Eighth embodiment] The driving transistor 136 that drives the EL element 142 maintains a voltage based on a data signal. The capacitor 140 is provided to hold the voltage information. However, due to the gate-drain capacitance Cgd of the selection transistor 138, the gate voltage When the capacitance of the capacitor 140 is large, this does not cause a problem. However, as the resolution of small and medium-sized displays has increased, pixel size has decreased and capacity When the capacitance of the element 140 cannot be made large, this effect cannot be ignored. In the write method, if the capacitance of the capacitor 140 is increased, the write time must be increased. However, the number of pixels and the drive frequency do not allow for sufficient writing time, which hinders gradation expression. There is a problem that this can cause problems.

[0224] FIG. 51 shows an example of a pixel circuit that can suppress the above-mentioned fluctuations in ΔVgd. Specifically, the subpixel 105 is configured such that the first transistor 138 (selection transistor) is a driving transistor. A data signal is applied to the gate of the transistor 136, and the EL element 142 is driven by the transistor 136. In a configuration in which a light-emission control transistor 137 is connected between the light-emission control transistor 136 and the light-emission control transistor 137, The second transistor 139 is connected to the data line signal 108 and the drain of the light emission control transistor 137. and further connected between the second gate of the second transistor 139 and the drive transistor 136. By connecting the second capacitance element 274 between the gate electrode of the first transistor 138 and the When the voltage falls, the voltage of the capacitance element 140 does not fluctuate by ΔVgd. .

[0225] FIG. 52 shows a planar layout of the subpixel 105 shown in FIG. 51, and FIG. 53 shows a planar layout of the subpixel 105 1 is a partial cross-sectional view of a first transistor 138, a second capacitance element 274, and The cross-sectional structure of the EL element 142 disposed on the upper layer side is shown. An electrode 272 extends from the first transistor 138 to the fourth metal oxide conductive layer 176d and the second insulating layer 176e. The second capacitance electrode 272 is provided so as to overlap with the edge layer 212. Since it can be formed in the same layer as the second gate electrode 151 of the transistor 136, This eliminates the need to add additional layers and allows the formation of the film without increasing the number of photomasks. .

[0226] 54 and 55 show a layout diagram of the subpixel 105 and a partial cross-sectional view of the subpixel 105, respectively. As shown, the second gate electrode 151 of the driving transistor 136 is connected to the light-emitting control transistor 1 a fourth metal oxide conductive layer 17 connected to the drain of the first transistor 138; 6d and the second insulating layer 212 are provided so as to overlap each other, thereby forming a second capacitance element 274. It may be possible to do so.

[0227] In this way, by providing the second capacitance element 274, the gate of the selection transistor 138 When the gate voltage falls due to the drain capacitance Cgd, it fluctuates by ΔVgd. This embodiment is different from the first embodiment in that it can suppress the voltage fluctuation of the capacitance element 140. The present invention can be implemented in appropriate combination with a display device equipped with a touch and fingerprint sensor.

[0228] [Ninth embodiment] In this embodiment, the EL element 142 provided in the display device 100 with the touch and fingerprint sensor An example of the light extraction structure is shown below.

[0229] 56 shows a cross-sectional structure of the subpixel 105 according to this embodiment. 105 is provided with a wire grid polarizer 250 on the side where the EL element 142 emits light. For example, the wire grid polarizer 250 has a first sensor electrode 112 and a second sensor electrode 113. The sensor electrode 114 is provided between the transparent resin substrate 200 and the EL element 142. Specifically, in FIG. 56, the wire grid polarizer 250 is provided on the upper surface of the shield electrode 116. As described with reference to FIG. 16A, the EL element 142 has a first electrode 22 Between the positive electrode 200 and the second electrode 232, an electron transport layer 222, an electron injection layer 224, an emitting layer 226, a positive ... It has a structure in which a hole transport layer 228 and a hole injection layer 230 are stacked.

[0230] The EL element 142 emits light toward the transparent resin substrate 200 side, so the first electrode 220 is transparent. The first electrode 231 is formed of a transparent conductive film, and the second electrode 232 is formed of a metal film. 42 further includes a light scattering layer 251 between the electron injection layer 230 and the second electrode 232. The light scattering layer 251 is made of a transparent adhesive ink 254 containing transparent light scattering beads 252. For example, transparent light-scattering beads 2 The transparent adhesive ink 254 containing the ink 52 is applied to the sub-pixels 10 by a printing method such as inkjet printing. By applying the coating to the area 5, the light scattering layer 251 can be formed.

[0231] FIG. 58 shows the detailed structure of the wire grid polarizer 250. Wire grid polarizer 2 50 has a structure in which a fine line pattern is periodically arranged. The fine line pattern is made of aluminum ( Al), aluminum-silver alloy (AlAg), aluminum with silicon or neodymium additions The wires 258 are made of aluminum alloys (Al-Si, Al-Nd) or the like. A light absorbing layer 256 that absorbs visible light is provided on the shield electrode 116 side of the metal wire 258. The light absorbing layer 256 may be made of silicon (Si), germanium (Ge), silicon Semiconductor materials with optical absorption bands in the visible light range, such as germanium (SiGe), and refractory metal silica Iodides (chromium (Cr), cobalt (Co), nickel (Ni), tantalum (Ta), molybdenum (Mo) Compounds of silicon with high melting point metals such as butenone (Mo), titanium (Ti), and niobium (Nb) The width of the metal thin wire 258 is preferably 100 nm or less, and more preferably 7 0 nm or less, and a thickness of 100 nm or more, preferably 200 nm or more, and The metal is arranged at a pitch of less than half (for example, 200 nm or less). The shiny surface is visible, but the thin metal wires 25 are attached to the surface of the wire grid polarizer 250 that is visible. By providing a light absorbing layer 256 on the display screen 8, it is possible to prevent the display screen from becoming a mirror surface. do.

[0232] FIG. 59 shows an example in which a wire grid polarizer 250 is provided on an insulating layer 260. The metal thin wires 258 that make up the yagrid polarizer 250 have a pitch that is less than half the wavelength of visible light. (for example, 200 nm or less), it can also serve as a shield electrode 116. At this time, the thin metal wire 258 is held at a constant potential (for example, It is preferable that the potential be controlled to a ground potential.

[0233] Wire grid polarizer 250 is a linear polarizer, having a transmission polarization axis and a reflection polarization axis. As shown in FIG. 68, the wire grid polarizer 250 is provided, and thus the EL element 1 Of the emitted light 42, the polarized component parallel to the transmission polarization axis (TM wave) is transmitted and passes through the transparent resin substrate 20 The polarized component (TE wave) that is parallel to the reflected polarization axis is reflected from EL Half of the light emitted from element 142 is reflected by wire grid polarizer 250 and returned to the EL element. The light that re-enters the EL element 142 is scattered by the light scattering layer 251 and the polarization axis Then, the light is emitted again from the EL element 142, and some of it is wire grid polarized light. The remaining component is reflected. By providing the polarizer 250 and the light scattering layer 251, the light emitted from the EL element 142 is scattered. By multiple reflection, the polarization axis of the emitted light can be made to converge in one direction.

[0234] Although not shown in FIG. 56, the display device 100 with a touch and fingerprint sensor has a control To improve cost, a polarization axis rotation plate is provided on the display screen side. It is a combination of 1 / 2 retardation plates, and the linear polarization axis and the 1 / 2 retardation delay axis are at 45 degrees. At this time, as shown in Figure 60, the wire grid polarizer By tilting the linear polarization axis of the polarization axis rotation plate by 45 degrees with respect to the transmitted polarization axis of 250, The extraction efficiency of the light emitted from the L element 142 can be greatly improved.

[0235] The direction of the transmission polarization axis of the wire grid polarizer 250 is changed by changing the direction in which the thin metal wires 258 extend. 61 shows the relationship between the scanning signal line 106 and the data signal line 107. A pattern of thin metal wires 258 is provided within the area surrounded by the line 108 (the area of ​​the subpixel 105). As shown in FIG. 61, the thin metal wires 258 are arranged along the line where the scanning signal lines 106 extend. By having a pattern extending in a direction parallel to the direction of the data signal line 1, the transmission polarization axis 08. Although not shown, the thin metal wires 258 However, it may have a pattern extending in a direction parallel to the direction in which the data signal lines 108 extend. FIG. 62 shows that the pattern of the thin metal wires 258 is By having a pattern arranged at a predetermined angle with respect to the metal fine An example in which the wire 258 is arranged in a direction perpendicular to its longitudinal direction is shown.

[0236] FIG. 57 shows a wire grid polarizer 250 embedded in the planarization layer 246. The thin metal wires 258 are formed to a thickness of about 100 nm to 200 nm. By providing such thin metal wires 258 so as to be embedded in the planarizing film 246, a wire grip Even if the rod polarizer 250 is provided in a so-called in-cell form, the flatness is not impaired and the EL element 14 2 can be set.

[0237] FIG. 66 shows an example in which a wire grid polarizer 250 is provided on the upper surface of the first electrode 220. The thin metal wires 258 and the light absorbing layer 256 that constitute the wire grid polarizer 250 are The metal thin wires 258 and the light absorbing layer 256 are formed on the transparent conductive film that forms the electrode 220. In this case, a concave-convex structure is formed on the upper surface of the first electrode 220, but the electron transport layer 222 is made of a coating material. The thin metal wires 258 are embedded so as not to affect the light-emitting layer 226. A short circuit with the second electrode 232 can be prevented.

[0238] 67 shows a plan view of the first electrode 220 and the thin metal wire 258. The thin metal wire 258 is It is provided on the transparent conductive film that forms the electrode 220. As shown in FIG. 67, the thin metal wires 258 are formed so as to extend to the side. A metal pattern is provided that surrounds the outer periphery of the first electrode 238 using a metal film that forms the wire 258, and the metal thin wire By connecting 258, the resistance of the transparent conductive film (first electrode 220) can be reduced.

[0239] As shown in this embodiment, among the layers forming the display device with touch and fingerprint sensor 100, By providing a wire grid polarizer 250 at the Even if a rotating plate is provided, the light extraction efficiency can be significantly improved.

[0240] [Tenth embodiment] This embodiment is a further variation of the sealing structure and the lead wiring structure shown in the first embodiment. This indicates the application.

[0241] FIG. 63A shows the first wiring 147 formed in the same layer as the data signal line 108. 2 shows a structure in which the sensor electrode 114 is connected to wiring or a circuit on the transparent resin substrate 200. The lead-out wiring 147 is provided on the first insulating layer 210, and the first insulating layer 210, the fourth transparent resin The contact hole 159 is connected to the second transparent resin layer 202c. The second insulating layer is formed on the first lead-out wiring 147 and the first contact hole 159. The edge layer 212 is provided and further covered with the silicon nitride film 214c, so that the outer It can prevent moisture from entering.

[0242] FIG. 63B shows a lead-out line formed in the same layer as the scanning signal line 106 or the second scanning signal line 107. The second sensor electrode 114 is connected to the wiring or circuit on the transparent resin substrate 200 by the wiring 147. The lead wiring 147 is provided on the second insulating layer 212. A contact hole penetrating the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer 202d The shield electrode 116 is formed on the third transparent resin layer 202c by the rule 159. The first lead-out wiring 147a is connected to the third lead-out wiring 147b. The second sensor electrode 114 is connected to the transparent resin layer 202c through a contact hole 169 formed in the transparent resin layer 202c. With this structure, the second sensor electrode 114 is also connected to the transparent resin substrate 2. It can be connected to the wiring or circuit on 00.

[0243] 64A shows the structure shown in FIG. 22A, except that the lead wiring 147 is disposed on the second insulating layer 212. The drawing wiring 147 is formed in the same layer as the second scanning signal line 107. The top of the lead-out wiring 147 is covered with the silicon nitride film 214c. The lead wire 147 extends outward to form the second connection terminal 146b. Even if the thickness is small, a structure in close contact with the sealing layer 236 can be formed, thereby improving reliability. .

[0244] 64B shows the connection structure between the second electrode 232 and the third connection terminal 146c. 232 is drawn out to the end of the transparent resin substrate 200 and is formed in the same layer as the second scanning signal line 107. The lead-out wiring 147 is connected to the third connection terminal 146. c), but even in this structure, the lead wiring 14 7 is covered with the silicon nitride film 214c, thereby forming a structure in close contact with the sealing layer 236. This allows for increased reliability.

[0245] FIG. 65A shows the connection structure between the data signal line 108 and the first connection terminal 146a. The signal line 108 is drawn out to the end of the transparent resin substrate 200 and has the same structure as the second scanning signal line 107. The lead wiring 147 is connected to the first connection wiring 147. The terminal 146a has a structure extending outward, but this structure also has a drawn-out structure. The wiring 147 is covered with the silicon nitride film 214c, and thus adheres to the sealing layer 236. The structure can be formed, and the reliability can be improved.

[0246] 65B shows a configuration in which the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer 214 are arranged in a different manner from FIG. 63B. 202d, and is led out by a contact hole 159 penetrating the third transparent resin layer 202c. The wiring 147 is directly connected to the second sensor electrode 114. However, the second sensor electrode 114 can be connected to the wiring or circuit on the transparent resin substrate 200. Cut.

[0247] 16, 19, 21, 49, 53, and 55, the display panel is External light entering the interior is reflected by the various metals that make up the display panel and then emitted back out into the outside world. This contrast reduction is caused by the light being reflected from the object. To prevent this, a circular polarizer (a linear polarizer and a quarter-wave plate are used as an optical component) is actually used. The transparent resin layer 202a is placed so as to be in close contact with the transparent resin layer 202a, but this is omitted in the above drawings. do.

[0248] 56, 57, and 66 show wire grids used to improve light extraction efficiency. The display panel includes a built-in polarizer 250. When external light enters the display panel, the polarizer The light is reflected by various electrodes and wiring made of metal materials and is then emitted back into the outside world. In order to prevent this kind of decrease in contrast, The electrodes and wiring made of metal materials that make up the display panel are layered under a wire grid polarization It is preferable to provide a light absorbing layer similar to the light absorbing layer 256 constituting the photon 250. It is omitted in the above drawings. [Explanation of symbols]

[0249] 100: Display device with touch and fingerprint sensor, 102: Display unit, 104: Screen 105...subpixels, 106...scanning signal lines, 107...second scanning signal lines, 10 8: data signal line; 110: touch and fingerprint sensor section; 112: first sensor electrode, 114... second sensor electrode, 116... shield electrode, 118... first drive electrode circuit, 118b: output switching circuit, 118c: scanning signal line driving circuit, 118d: Scan circuit, 120 switching circuit, 122 terminal portion, 124 sealing layer, 1 25 Driver IC, 126 Flexible circuit board, 127 Film substrate material, 128... second drive circuit, 129... wiring group, 130... scanning signal line drive circuit block, 132...data signal line driving circuit block, 134...touch and fingerprint sensor Sensor detection circuit block, 135, pad, 136, drive transistor, 137, Light-emitting control transistor, 138 Selection transistor (first transistor), 13 9... second transistor, 140... capacitance element, 142... EL element, 141... First switching element, 143, output switching signal line, 144a, common electrode, 1 44b···· common wiring, 145··· second switching element, 146··· connection terminal, 147: Lead-out wiring, 148: Connection terminal, 149: Sixth connection terminal, 150 First gate electrode, 151 Second gate electrode, 152 First gate electrode, 1 53: second gate electrode; 154: power supply line; 156: switching element; 15 7 control signal line, 158 first opening, 159 first contact hole, 1 60: second opening; 161: second contact hole; 162: third opening; 163: Third contact hole; 164: Fourth opening; 165: Fourth contact Contact hole, 166···5th contact hole, 168···7th contact hole, 169: Contact hole, 170: Source wiring, 171: Eighth contact Hole, 172...connection wiring, 173...drain wiring, 174...source electrode, 175···Ninth contact hole, 176··Metal oxide conductive layer, 180···Oxide Semiconductor layer, 200 transparent resin substrate, 202 transparent resin layer, 204 first sensor a sensor electrode layer, 205 a first auxiliary electrode, 206 a second sensor electrode layer, 207 a second auxiliary electrode layer, 2 auxiliary electrode, 208 light-shielding layer, 210 first insulating layer, 212 second insulating layer, 214: silicon nitride film; 215: silicon oxide film; 216: third insulating layer; 220...first electrode, 222...electron transport layer, 224...electron injection layer, 226... ·Emitting layer, 227···Electron blocking layer, 228···Hole transport layer, 230···Positive hole injection layer, 232...second electrode, 234...third opening, 236...sealing layer, 23 7···Silicon carbon nitride film, 238···Silicon nitride film, 240···Separation region, 2 42...conductive particles, 244...resin, 246...flattening layer, 248...passi Inversion layer, 250...wire grid polarizer, 251...light scattering layer, 252... ·Beads, 254···Adhesive ink, 256···Light absorbing layer, 258···Metallic wire, 2 60 insulating layer, 262 partition wall, 264 eighth contact hole, 266 First gate electrode 268 Second gate electrode 270 Second capacitance element 272 Capacitive electrode, 274, second capacitive element

Claims

1. A first transparent resin layer, a second transparent resin layer, a third transparent resin layer, and a fourth transparent resin layer are formed in this order. a laminated transparent resin substrate; a plurality of transparent resin layers disposed between the first transparent resin layer and the second transparent resin layer and extending in a first direction; a first sensor electrode; a first transparent resin layer disposed between the second transparent resin layer and the third transparent resin layer and intersecting the first direction; a plurality of second sensor electrodes extending in a second direction; a shield disposed between the third transparent resin layer and the fourth transparent resin layer and including a first opening; An electrode; a first insulating layer on the fourth transparent resin layer; a second insulating layer on the first insulating layer; a third insulating layer on the second insulating layer; a sealing layer covering the third insulating layer; a plurality of connection terminals between the first insulating layer and the second insulating layer; a drive circuit connected to the plurality of connection terminals; and The plurality of first sensor electrodes and the plurality of connection terminals are connected to the first insulating layer, the fourth transparent a first contact hole penetrating the resin layer, the third transparent resin layer, and the second transparent resin layer; Connected via The first contact hole is disposed inside the first opening, and the third insulating layer and covered with the sealing layer, the plurality of connection terminals are arranged in an area exposed from the third insulating layer and the sealing layer, The shield electrode extends to a region overlapping with the drive circuit. A display device with a touch sensor.

2. a plurality of lead-out wirings between the first insulating layer and the second insulating layer; The plurality of second sensor electrodes and the plurality of lead-out wirings are connected to the first insulating layer, the fourth insulating layer, and the a transparent resin layer, the transparent resin layer being connected via a second contact hole penetrating the third transparent resin layer; The second contact hole is disposed at a position where it does not overlap with the shield electrode, 3 covered with the insulating layer and the sealing layer, The display device with a touch sensor according to claim 1 .

3. the transparent resin substrate has corners, and the corners have a rounded shape; The display device with a touch sensor according to claim 1 .

4. The driving circuit includes a scanning signal line driving circuit block, a data signal line driving circuit block, a touch panel ... and a fingerprint sensor detection circuit block, The display device with a touch sensor according to claim 1 .

5. a display unit in which a plurality of pixels are arranged, The display unit includes a first electrode provided for each of the plurality of pixels and a second electrode provided across the plurality of pixels. a second electrode extending therethrough; and a light-emitting layer between the first electrode and the second electrode; the second electrode extends on the third insulating layer and is covered by the sealing layer; The display device with a touch sensor according to claim 1 .

6. a plurality of data signal lines disposed in the display unit and extending in the first direction; a plurality of switching circuits between the display unit and the plurality of connection terminals; Each of the plurality of switching circuits is connected to one connection terminal selected from the plurality of connection terminals. switching the connection to two or more data signal lines among the plurality of data signal lines; the plurality of switching circuits and the plurality of connection terminals are arranged along the second direction, The first contact holes are disposed between the plurality of connection terminals and the plurality of switching circuits. And, The plurality of first sensor electrodes are sandwiched between the plurality of switching circuits and are connected to the first contact holes. extending into the area of ​​the The display device with a touch sensor according to claim 5 .

7. the plurality of switching circuits are arranged in two sets along the second direction, The plurality of first sensor electrodes extend between the two sets of the plurality of switching circuits. There are, The display device with a touch sensor according to claim 6 .

8. Each of the plurality of pixels includes a transistor connected to the first electrode, a capacitance element, and , including The transistor and the capacitor element are configured to include an oxide semiconductor layer and a transparent conductive film. It is being The display device with a touch sensor according to claim 5 .

9. a wire grid polarizer disposed between the first electrode and the transparent resin substrate; a light scattering layer disposed between the light emitting layer and the second electrode. The display device with a touch sensor according to claim 8 .

10. the shield electrode is interposed between the transistor and the plurality of second sensor electrodes; the wire grid polarizer is provided on one surface of the shield electrode; The display device with a touch sensor according to claim 9 .

11. The wire grid polarizer is provided between the transistor and the first electrode. 、 The display device with a touch sensor according to claim 9 .

12. The wire grid polarizer has a light absorbing layer on the transparent resin substrate side and a gold layer on the first electrode side. and a metal wire, The display device with a touch sensor according to claim 9 .

13. a plurality of pixels, a plurality of scanning signal lines extending in the second direction, and a plurality of scanning signal lines extending in the first direction; a display unit including a plurality of data signal lines; a peripheral area outside the display unit; a scanning signal line drive circuit for outputting scanning signals to the plurality of scanning signal lines; a scan circuit that outputs a scan signal to the second sensor electrode; The scanning signal line driving circuit and the scanning circuit are arranged on both sides of the display unit in the peripheral region. and extending in the first direction, the scanning signal line driving circuit is disposed near the display unit, the scanning circuit is disposed outside the scanning signal line driving circuit; The display device with a touch sensor according to claim 1 .

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