Photoelectric conversion device, and apparatus

Abstract

To provide a photoelectric conversion device that, when the amounts of signal charges generated from a plurality of photoelectronic conversion elements are different from each other, can acquire an appropriate signal and perform phase difference detection.SOLUTION: A first pixel and a second pixel are each arranged on a semiconductor substrate, and have a floating diffusion part shared by a first photoelectric conversion element, a second photoelectric conversion element, a third photoelectric conversion element, and a fourth photoelectric conversion element. A first element separation including a trench structure is arranged between the first pixel and the second pixel. A second element separation including a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element. A third element separation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element. The length in a first direction of the trench structure in the second element separation is longer than the length in a second direction of the trench structure in the third element separation.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a photoelectric conversion device and an apparatus. [Background technology]

[0002] There is known a photoelectric conversion device in which a plurality of pixels, each having a plurality of photoelectric conversion elements and a floating diffusion region shared by the plurality of photoelectric conversion elements, are arranged side by side. For example, Patent Document 1 discloses that one pixel includes four photoelectric conversion elements arranged in two rows and two columns, and a floating diffusion region disposed between the four photoelectric conversion elements, and an isolation region having a trench structure is disposed between the photoelectric conversion elements in the pixel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-3799 Summary of the Invention [Problem to be solved by the invention]

[0004] In Patent Document 1, when the amounts of signal charges generated in the four photoelectric conversion elements arranged in a pixel are different, the signal charge overflowing from the first photoelectric conversion element may overflow into the photoelectric conversion elements arranged in the row direction or into the photoelectric conversion elements arranged in the column direction. In this case, it may be impossible to obtain an appropriate signal, making it difficult to detect a phase difference in a specific direction.

[0005] The present invention has been made in consideration of the above-mentioned problems, and aims to provide a photoelectric conversion device that can acquire an appropriate signal and perform phase difference detection when the amount of signal charge generated among multiple photoelectric conversion elements differs. [Means for solving the problem]

[0006] According to one disclosure of the present specification, there is provided a photoelectric conversion device having a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, wherein each of the first pixel and the second pixel is arranged on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and has a first photoelectric conversion element and a second photoelectric conversion element that are aligned in order in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element that are aligned in order in the first direction, and a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, wherein the first photoelectric conversion element and the third photoelectric conversion element are aligned in order in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are aligned in order in the second direction, and the floating diffusion portion a diffusion portion is arranged between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element; a first element isolation including a trench structure is arranged between the first pixel and the second pixel; in the first pixel, a second element isolation including a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a third element isolation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element; in a plan view of the first surface, an area of ​​the trench structure in the second element isolation is different from an area of ​​the trench structure in the third element isolation; and the difference between the area of ​​the trench structure in the second element isolation and the area of ​​the trench structure in the third element isolation is 5% or more. [Effects of the Invention]

[0007] According to the present invention, in a photoelectric conversion device, when the amount of signal charge generated among a plurality of photoelectric conversion elements differs, it is possible to obtain an appropriate signal and perform phase difference detection. [Brief explanation of the drawings]

[0008] [Figure 1]FIG. 1 is a block diagram illustrating a photoelectric conversion device according to a first embodiment. [Figure 2] Diagram showing the unit configuration [Figure 3] Diagram showing the unit configuration [Figure 4] 1 is a drive timing diagram illustrating the operation of a photoelectric conversion device; [Figure 5] 1 is a diagram showing the configuration of a stacked photoelectric conversion device; [Figure 6] FIG. 1 is a plan view illustrating a photoelectric conversion device according to a first embodiment; [Figure 7] 1 is a potential diagram for signal charges illustrating a photoelectric conversion device according to a first embodiment; [Figure 8] FIG. 1 is a plan view illustrating a photoelectric conversion device according to a first modified example of the first embodiment. [Figure 9] FIG. 10 is a plan view illustrating a photoelectric conversion device according to a second modification of the first embodiment. [Figure 10] FIG. 10 is a plan view illustrating a photoelectric conversion device according to a second embodiment. [Figure 11] FIG. 10 is a plan view illustrating a photoelectric conversion device according to a third embodiment. [Figure 12] FIG. 10 is a plan view illustrating a photoelectric conversion device according to a modification of the third embodiment. [Figure 13] FIG. 10 is a plan view illustrating the concept of a photoelectric conversion device according to a fourth embodiment. [Figure 14] FIG. 10 is a plan view illustrating a photoelectric conversion device according to a fourth embodiment. [Figure 15] FIG. 10 is a plan view illustrating a photoelectric conversion device according to a modification of the fourth embodiment. [Figure 16] Schematic diagram illustrating a device according to a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Each embodiment will be described below with reference to the drawings. Note that the following embodiments do not limit the scope of the claimed invention. Although the embodiments describe multiple features, not all of these features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same or similar components are designated by the same reference numerals, and redundant description will be omitted. Furthermore, each embodiment described below will focus on a CMOS sensor as an example of a photoelectric conversion device. However, each embodiment is not limited to a CMOS sensor and can be applied to other examples of photoelectric conversion devices. Examples include CCDs, imaging devices, distance measuring devices (devices for measuring distance using focus detection or TOF (Time Of Flight)), and photometric devices (devices for measuring the amount of incident light).

[0010] In this specification, terms indicating specific directions or positions (for example, "upper," "lower," "right," "left," and other terms including these terms) are used as necessary. The use of these terms is for the purpose of facilitating understanding of the embodiments with reference to the drawings, and the meaning of these terms does not limit the technical scope of the present invention.

[0011] In this specification, "plane" refers to a surface in a direction parallel to the main surface of a semiconductor substrate. Furthermore, "plan view" refers to a view from a direction perpendicular to the main surface of the semiconductor substrate. Furthermore, "cross section" refers to a surface in a direction perpendicular to the light incident surface of the semiconductor layer. Furthermore, "cross section" refers to a view from a direction parallel to the main surface of the semiconductor substrate.

[0012] The main surface of the semiconductor substrate may be a light incident surface of a semiconductor substrate including a photoelectric conversion element, a surface on which a plurality of AD conversion units are repeatedly arranged, or a bonding surface between substrates in a stacked photoelectric conversion device.

[0013] In this specification, the impurity concentration of each semiconductor region does not refer to the concentration corresponding to the actual amount of ion implantation, but rather refers to the impurity concentration that contributes to the behavior of the semiconductor region as a predetermined conductivity type. In other words, it refers to the concentration of the difference between the donor concentration and the acceptor concentration, and this impurity concentration is called the net doping concentration. For example, if a semiconductor region behaving as a P-type contains an impurity (donor) to make it N-type, the concentration of the impurity (donor) to make it N-type is subtracted from the concentration of the impurity (acceptor) to make it P-type. The subtracted concentration is then treated as the impurity concentration to make the semiconductor region the predetermined conductivity type.

[0014] First Embodiment The configuration of a photoelectric conversion device according to a first embodiment of the present invention will be described with reference to FIGS.

[0015] 1 is an example of a block diagram showing a schematic configuration of a photoelectric conversion device according to this embodiment. The photoelectric conversion device includes a pixel array 101, a vertical scanning circuit 102, a column amplifier circuit 103, a horizontal scanning circuit 104, an output circuit 105, and a control circuit 106. Here, the photoelectric conversion device is a semiconductor device formed on a semiconductor substrate such as a silicon substrate.

[0016] The pixel array 101 includes a plurality of pixels 107 arranged two-dimensionally on a semiconductor substrate in a first direction D1 and a second direction D2 intersecting the first direction D1. The first direction D1 is, for example, the row direction, and the second direction D2 is, for example, the column direction. A vertical scanning circuit 102 supplies a plurality of control signals for controlling a plurality of transistors included in the pixels 107 to be on (conductive state) or off (non-conductive state). Each column of the pixels 107 is provided with a column signal line 108, and signals from the pixels 107 are read out to the column signal line 108 for each column. A column amplifier circuit 103 amplifies the pixel signals output to the column signal line 108 and performs processes such as correlated double sampling based on the signals at the time of resetting the pixels 107 and the signals at the time of photoelectric conversion. A horizontal scanning circuit 104 supplies a switch connected to the amplifier of the column amplifier circuit 103 with a control signal for controlling the switch to be on or off. The control circuit 106 controls the vertical scanning circuit 102, the column amplifier circuit 103, and the horizontal scanning circuit 104. The output circuit 105 includes a buffer amplifier, a differential amplifier, etc., and outputs pixel signals from the column amplifier circuit 103 to a signal processing unit outside the imaging device. Alternatively, the photoelectric conversion device may be configured to output digital pixel signals by further providing an AD conversion unit in the photoelectric conversion device.

[0017] In FIG. 2, the unit U includes a pixel P(x, y) and a pixel P(x, y+1).

[0018] Each unit U has photoelectric conversion elements PD1 to PD8, a floating diffusion FD, transfer transistors M1 to M8, a reset transistor M9, an amplification transistor M10, and a selection transistor M11. In the unit U, eight photoelectric conversion elements PD1 to PD8 share one floating diffusion FD. Note that while a configuration in which one amplification transistor M10 is provided for two pixels has been shown here, a configuration in which multiple amplification transistors M10-1, M10-2, and M10-3 are provided may also be used, as shown in FIG. 3, and the number of amplification transistors is not limited.

[0019] Each of the photoelectric conversion elements PD1 to PD8 is a photoelectric conversion element that photoelectrically converts incident light to generate and accumulate electric charges corresponding to the incident light. Each of the photoelectric conversion elements PD1 to PD8 is, for example, a photodiode. The anode of the photodiode constituting each of the photoelectric conversion elements PD1 to PD8 is connected to a node at ground potential. The cathode of the photodiode constituting each of the photoelectric conversion elements PD1 to PD8 is connected to the source of the transfer transistor M1 to M8, respectively. Note that, although a configuration in which eight PD1 to PD8 share one FD is shown here, this example is not limiting. One FD may be arranged to correspond to one PD1, or one FD may be arranged to correspond to four PD1 to PD4.

[0020] The drains of the transfer transistors M1 to M8 are connected to a floating diffusion FD, which is a connection node between the source of the reset transistor M9 and the gate of the amplification transistor M10. The drain of the reset transistor M9 and the drain of the amplification transistor M10 are electrically connected to a power supply line having a pixel power supply potential VCC. The source of the amplification transistor M10 is connected to the drain of the selection transistor M11. The source of the selection transistor M11 is electrically connected to a current source (not shown) via the vertical output line Vline(m). This allows the amplification transistor M10 and the current source to operate as a source follower circuit. In other words, the amplification transistor M10 functions as an output unit that can output a signal corresponding to the potential of the floating diffusion FD to the vertical output line Vline(m). The floating diffusion FD includes a capacitance component (floating diffusion capacitance), and this capacitance component allows it to function as a charge storage unit.

[0021] Control signals PTX1(n) to PTX8(n) are input to the gates of the transfer transistors M1 to M8, respectively, from the vertical scanning circuit 102. The transfer transistors M1 to M8 transfer the charges accumulated in the photoelectric conversion elements PD1 to PD8 to the floating diffusion FD based on the control signals PTX1(n) to PTX8(n), respectively. That is, each of the transfer transistors M1 to M8 functions as a charge transfer unit. The floating diffusion FD holds the transferred charges.

[0022] A control signal PRES(n) is input to the gate of the reset transistor M9 from the vertical scanning circuit 102. The reset transistor M9 resets the potential of the floating diffusion FD to a predetermined potential based on the control signal PRES(n).

[0023] A control signal PSEL(n) is input to the gate of the selection transistor M11 from the vertical scanning circuit 102. The control signal PSEL(n) is a signal that selects a row from which a signal is to be output, and the selection transistor M11 becomes conductive or non-conductive based on the control signal PSEL(n). The subscript n of each control signal indicates the row number of the corresponding row.

[0024] A transistor is assumed to be in a conductive state when the control signal input to its gate is high level, and in a non-conductive state when it is low level. Also, a high level corresponds to a logical value of "1" and a low level corresponds to a logical value of "0."

[0025] When the transfer transistors M1 to M8 are non-conductive, the photoelectric conversion elements PD1 to PD8 are in an accumulation state in which they accumulate charges generated by photoelectric conversion. When the transfer transistors M1 to M8 are in an conductive state and the reset transistor M9 is in an conductive state, the photoelectric conversion elements PD1 to PD8 are in a non-accumulation state in which no charges are accumulated, i.e., a reset state. When any of the transfer transistors M1 to M8 are in an conductive state and the reset transistor M9 is in an non-conductive state, the pixel P(m,n) is in a readout state in which the charges of the photoelectric conversion elements PD1 to PD8 can be transferred to the floating diffusion FD and read out. The reset of the photoelectric conversion elements PD1 to PD8 may be controlled by a charge discharging transistor configured to electrically connect the cathodes of the photoelectric conversion elements PD1 to PD8 to a power supply line having a power supply potential.

[0026] In this embodiment, each transistor is an N-channel MOS transistor, but it may be a P-channel MOS transistor, in which case the level of each control signal may be changed as appropriate.

[0027] Next, the pixel drive pulses output from the vertical scanning circuit 102 will be described with reference to Fig. 4. Fig. 4 is a timing chart of control signals output from the vertical scanning circuit 102 according to this embodiment. Fig. 4 shows the timing of pixel drive pulses corresponding to three rows of pixels P, including the n-1th, nth, and n+1th rows. Note that the timing of the pixel drive pulses for the n-1th and n+1th rows is shifted in the time direction relative to the timing of the nth row, and therefore the pixel drive pulse for the nth row will be described below, and descriptions of the other rows will be omitted.

[0028] Before time t1, the control signal RES[n] and the control signals TX1[n] to TX8[n] are maintained at high level. As a result, the photoelectric conversion elements PD1 to PD8 are maintained in a reset state. In addition, the control signal SEL[n] is maintained at low level, and the selection transistor M11 is in a non-conductive state.

[0029] At time t1, the control signals TX1[n] to TX8[n] transition to low level, thereby releasing the reset state of the photoelectric conversion elements PD1 to PD8.

[0030] At time t2, the control signal TX1[n] transitions to high level, and the photoelectric conversion element to which the control signal TX1[n] is input is temporarily reset. Then, at time t3, the control signal TX1[n] transitions to low level. These operations cause the photoelectric conversion element to which the control signal TX1[n] is input to start accumulating charge.

[0031] At time t4, the control signal TX2[n] transitions to high level, and the photoelectric conversion element to which the control signal TX2[n] is input is temporarily reset. Then, at time t5, the control signal TX2[n] transitions to low level. These operations cause the photoelectric conversion element to which the control signal TX2[n] is input to start accumulating charge.

[0032] Similarly, during the period from time t6 to time t17, pulses of control signals TX3[n] to TX8[n] are output, and accumulation in each photoelectric conversion element begins sequentially. The series of operations from time t2 to time t17 is called reset scanning of the nth row.

[0033] Furthermore, the length of the period from time t17, which is immediately after the reset scan of the nth row, to time t18, when the next operation starts, can be set appropriately. By adjusting the length of this period, it is possible to control the charge accumulation time in the photoelectric conversion elements PD1 to PD8. The length of this period is set, for example, by a control signal from the CPU 1. Figure 4 shows a case where the length of the period from time t17 to time t18 is approximately the shortest.

[0034] At time t18, the control signal SEL[n] transitions to high level, turning on the selection transistor M11. This electrically connects the amplification transistor M10 of the pixel P(m,n) to the vertical output line Vline(m) via the selection transistor M11. This operation enables a signal based on the potential of the floating diffusion FD to be output to the vertical output line Vline(m) of the mth column.

[0035] Between time t18 and time t19, the control signal RES[n] transitions to low level, thereby releasing the reset state of the floating diffusion FD.

[0036] After the reset of the floating diffusion FD is released, at time t19, the control signal TX1[n] transitions to high level. This operation causes the charge accumulated in the photoelectric conversion element to which the control signal TX1[n] is input to be transferred to the floating diffusion FD. Then, a signal corresponding to the potential of the floating diffusion FD is output to the vertical output line Vline(m) of the mth column. The signal output to the vertical output line Vline(m) is amplified and AD converted by the column amplifier circuit 103, and then stored in the column memory as a digital signal.

[0037] Then, at time t20, the control signal TX1[n] transitions to low level, completing the transfer of the charges stored in the photoelectric conversion element. That is, the period from time t3 to time t20 corresponds to the charge storage period in the photoelectric conversion element.

[0038] Between time t20 and time t21, the control signal RES[n] transitions to high level, and after a predetermined time, transitions to low level again. This operation resets the potential of the floating diffusion FD.

[0039] At time t21, the control signal TX2[n] transitions to high level, and a transfer operation similar to that at time t19 begins. Then, at time t22, the control signal TX2[n] transitions to low level, and the transfer operation of the charge accumulated in the photoelectric conversion element is completed.

[0040] Similarly, during the period from time t23 to time t34, pulses of control signals TX3[n] to TX8[n] are output, and transfer operations from each photoelectric conversion element to the floating diffusion FD are performed sequentially. The series of operations from time t19 to time t34 is called readout scanning of the nth row.

[0041] At time t35, the control signal SEL[n] transitions to low level, and the selection transistor M11 becomes non-conductive, thereby electrically disconnecting the amplification transistor M10 of the pixel P from the vertical output line Vline(m).

[0042] At time t36, the control signals TX1[n] to TX8[n] transition to high level, which resets the photoelectric conversion elements PD1 to PD8. In this way, a series of operations from the start of charge accumulation in the unit U on the nth row to the end of readout scanning on the nth row is completed.

[0043] Here, the operation of reading out signal charges from PD1 to PD8 one by one by individually controlling the control signals TX1[n] to TX8[n] has been described, but the present invention is not limited to this operation. For example, when performing focus detection focusing on the vertical direction of the subject, signals may be simultaneously read out from adjacent PDs in the row direction. That is, the control signal TX1[n] and the control signal TX3[n] may be synchronized, and the control signal TX2[n] and the control signal TX4[n] may be synchronized. Furthermore, when performing focus detection focusing on the horizontal direction of the subject, the control signal TX1[n] and the control signal TX2[n] may be synchronized, and the control signal TX3[n] and the control signal TX4[n] may be synchronized.

[0044] FIG. 5 is a configuration diagram of a photoelectric conversion device of this embodiment. The photoelectric conversion device of this embodiment has a stacked sensor structure in which a first substrate SUB1 and a second substrate SUB2, which are semiconductor substrates, are stacked. The first substrate SUB1 is typically formed using single crystal silicon. The second substrate SUB2 may also be formed using single crystal silicon. However, this is not a limitation, and the first substrate SUB1 and the second substrate SUB2 may also be compound semiconductor substrates that combine multiple materials. In other words, the first substrate SUB1 and the second substrate SUB2 can each be a variety of semiconductor substrates.

[0045] Furthermore, the arrangement of the members shown in FIG. 1 on each of the first substrate SUB1 and the second substrate SUB2 can be changed as appropriate.

[0046] This embodiment is not limited to a stacked sensor, but may be a back-illuminated non-stacked sensor in which the second substrate SUB2 serves as a support substrate and all of the components shown in FIG.

[0047] The pixel array 101 shown in FIG. 1 is disposed on the first substrate SUB1. Meanwhile, the second substrate SUB2 is provided with the components of the configuration shown in FIG. 1 other than the pixel array 101. Electrical connection between the first substrate SUB1 and the second substrate SUB2 can be achieved using a known method. For example, a via structure having a metal portion penetrating the first substrate SUB1 may be provided, and this via structure may connect the wiring between the first substrate SUB1 and the bonding surface to the wiring between the second substrate SUB2 and the bonding surface. This connection method is sometimes called Through Silicon Via (TSV). As another form, an exposed metal junction is provided inside the insulating film on the bonding surface on the first substrate SUB1 side. This metal junction is connected to the wiring between the first substrate SUB1 and the bonding surface. Similarly, an exposed metal junction is provided inside the insulating film on the bonding surface on the second substrate SUB2 side. This metal junction is connected to the wiring between the second substrate SUB2 and the bonding surface. The metal bonding portions provided on the bonding surface on the first substrate SUB1 side and the bonding surface on the second substrate SUB2 side are bonded to each other, and the insulating films are bonded to each other. This allows electrical connection between the wiring between the first substrate SUB1 and the bonding surface and the wiring between the second substrate SUB2 and the bonding surface. This bonding method is sometimes called hybrid bonding.

[0048] 6(a) and 6(b) show examples of plan views of a pixel 107. FIG. 6(b) is a plan view of a semiconductor substrate, and FIG. 6(a) is a plan view of FIG. 6(b) with a transfer gate 202 disposed thereon. The pixel 107 includes four photoelectric conversion elements 201a to 201d, each of which is disposed on a semiconductor substrate. The semiconductor substrate has a first surface that serves as a light incident surface and a second surface opposite to the first surface, and FIG. 6 is a plan view as viewed from the second surface side. A microlens 205 is disposed on the second surface side, but is indicated by a dashed line to make it easier to understand its positional relationship with the photoelectric conversion elements 201a to 201d.

[0049] 6(a) and 6(b), in the pixel 107, a plurality of photoelectric conversion elements 201a, 201b, 201c, and 201d are arranged so as to share the same microlens 205. When expressing the plurality of photoelectric conversion elements 201a, 201b, 201c, and 201d in general terms, they are referred to as photoelectric conversion elements 201.

[0050] Photoelectric conversion elements 201a (first photoelectric conversion element) and 201b (second photoelectric conversion element) are arranged in order in a first direction D1, and photoelectric conversion elements 201c (third photoelectric conversion element) and 201d (fourth photoelectric conversion element) are arranged in order in the first direction D1. Furthermore, photoelectric conversion elements 201a and 201c are arranged in order in a second direction D2, and photoelectric conversion elements 201b and 201d are arranged in order in the second direction D2.

[0051] The photoelectric conversion element may be a photodiode, and includes at least a semiconductor region of a first conductivity type (first semiconductor region) that accumulates signal charges.

[0052] 6(a), transfer gates 202 are arranged corresponding to the respective photoelectric conversion elements 201. Furthermore, in a plan view of the second surface side of the semiconductor substrate, floating diffusions (FDs) 203 and element isolations 204a, 204b, 204c, 204d, and 204e are arranged between the multiple photoelectric conversion elements 201.

[0053] The floating diffusion region 203 is disposed between the photoelectric conversion elements 201a and 201d and between the photoelectric conversion elements 201b and 201c. The floating diffusion region 203 is formed, for example, of an N-type semiconductor region capable of accumulating signal charges, and is shared by the photoelectric conversion elements 201a to 201d.

[0054] Each transfer gate 202 is disposed adjacent to a floating diffusion region 203 and transfers signal charges output from a corresponding photoelectric conversion element 201 to the floating diffusion region 203. The transfer gate 202 may be a horizontal (planar) transfer gate 202 disposed on the second surface of the semiconductor substrate, or a vertical transfer gate. A vertical transfer gate has a portion of the gate extending in the depth direction of the semiconductor substrate. That is, in a vertical transfer gate, the transfer gate extends from the first surface to the second surface of the semiconductor substrate. The floating diffusion region 203 and the charge accumulation region of the photoelectric conversion element may be disposed at different depths. In such a case, by using a vertical transfer gate, signal charges can be transferred from the photoelectric conversion element 201 disposed at a deep position to the floating diffusion region.

[0055] The multiple photoelectric conversion elements 201 are separated by an isolation region 204. Between the photoelectric conversion element of the first pixel and the photoelectric conversion element of the second pixel, an isolation (first isolation) 204c including a trench structure penetrating from the first surface to the second surface of the semiconductor substrate is arranged. The first pixel receives light through a first microlens, and the second pixel receives light through a second microlens. Within one pixel 107, the photoelectric conversion elements 201a and 201b are separated by an isolation (second isolation) 204a. The photoelectric conversion elements 201c and 201d are separated by an isolation 204d (fourth isolation). Furthermore, the photoelectric conversion elements 201a and 201c are separated by an isolation (third isolation) 204b. The photoelectric conversion element 201b and the photoelectric conversion element 201d are separated by an isolation 204e (fifth isolation). In this embodiment, the isolation 204a and the isolation 204d have the same configuration, and the isolation 204b and the isolation 204e have the same configuration. The trench structure of the isolation 204c does not need to penetrate from the first surface to the second surface, and may be formed partially in the semiconductor substrate as long as it has a higher potential for signal charges than the isolation within the pixel.

[0056] In this embodiment, the element isolations 204a and 204b each include a trench structure. The trench structure includes, for example, at least one of an insulator and a metal. The element isolations 204a and 204b may also include an isolation region formed by a semiconductor region of a different conductivity type (second conductivity type) from the charge accumulation region of the photoelectric conversion element. For example, they may include a P-type semiconductor region.

[0057] In this embodiment, the length L1 of the trench structure of the isolation 204a in the second direction D2 is longer than the length L2 of the trench structure of the isolation 204b in the first direction D1. In Fig. 6, the trench structures between the horizontally arranged photoelectric conversion elements are arranged closer to the floating diffusion region than the trench structures between the vertically arranged photoelectric conversion elements.

[0058] By changing the lengths L1 and L2 of the element isolations 204a and 204b in this way, when high-intensity light is incident on the photoelectric conversion element 201a and signal charges overflow, the overflowed signal charges can be made to easily overflow into the photoelectric conversion element 201c. In other words, the signal charges can be made to overflow in a specific direction within the pixel. In other words, the potential level for the signal charges between the photoelectric conversion elements within the pixel can be changed.

[0059] In this embodiment, L2 is shortened, and the height of the potential for the signal charge between the photoelectric conversion elements 201a and 201c arranged in the second direction D2 is made lower than the height of the potential for the signal charge between the photoelectric conversion elements 201a and 201b arranged in the first direction D1. This makes it easier for the signal charge to overflow into the photoelectric conversion element 201c. This improves the phase difference detection accuracy for an object with vertical stripe contrast.

[0060] The difference between length L1 and length L2 is preferably 5% or more, and more preferably 10% or more. This makes it easier to create a path for signal charge to overflow. Length L1 can be, for example, 5% or more and 40% or less of the size of the pixel 107. Also, length L2 can be, for example, 5% or more and 40% or less of the size of the pixel 107.

[0061] In this embodiment, the trench structure of the element isolation 204a, the trench structure of the element isolation 204b, and the trench structure of the element isolation 204c are connected to form an integrated structure, but this is not limiting. For example, the trench structure of the element isolation 204a, the trench structure of the element isolation 204b, and the trench structure of the element isolation 204c may not be connected to each other.

[0062] 6(a) shows a configuration in which four photoelectric conversion elements 201 are arranged for one pixel 107, but this does not necessarily have to be four. Similarly to the photoelectric conversion elements 201, Fig. 2 also shows a configuration in which four transfer gates are arranged for one pixel 107, but this does not necessarily have to be four and there may be four or more.

[0063] A color filter may be disposed between the microlens 205 and the semiconductor substrate. The color filters may be arranged in a Bayer array. The Bayer array may be arranged for each pixel, or a Bayer array in which 2×2 pixels are of the same color may be used. For example, a red color filter may be disposed between the pixel 107 and the microlens 205a, and a green color filter may be disposed between the pixel 107 and the microlens 205b. A green color filter may be disposed between the pixel 107 and the microlens 205c, and a blue color filter may be disposed between the pixel 107 and the microlens 205d. Alternatively, a green filter may be disposed for a 2×2 pixel, a red filter for the adjacent 2×2 pixel, a blue filter for the 2×2 pixel, and a green filter for the adjacent 2×2 pixel. Color filters of the same color may also be disposed corresponding to multiple pixels. Note that color filters do not necessarily have to be disposed.

[0064] Figure 7 shows the potential level for signal charges at AB in Figure 6(a). P1 indicates the difference between the potential for signal charges in the element isolation 204c and the potential for signal charges between the photoelectric conversion element and the floating diffusion region. P2 indicates the difference between the potential for signal charges between the photoelectric conversion element and the floating diffusion region and the potential for signal charges between photoelectric conversion elements in the same pixel. P3 indicates the difference between the potential for signal charges between photoelectric conversion elements in the same pixel and the potential for signal charges between photoelectric conversion elements 201a and 201b.

[0065] The potential difference P1 prevents excess charge generated in the photoelectric conversion element 201 from being discharged to the floating diffusion region, thereby reducing the risk of signal charge overflowing to adjacent pixels and causing blooming. Furthermore, the potential difference P2 makes it easier for signal charge accumulated in each photoelectric conversion element to be discharged to the floating diffusion region than in adjacent pixels, thereby reducing the degradation of linearity under high illuminance. Furthermore, according to this embodiment, the potential difference P3 can be made as large as possible. If the potential difference P3 is small, signals accumulated in each photoelectric conversion element during phase difference detection overflow into other photoelectric conversion elements, resulting in a deterioration in the output of the photoelectric conversion element during phase difference detection under high illuminance. On the other hand, according to this embodiment, the potential difference P3 can be ensured, making it easier for signal charge to overflow between photoelectric conversion elements performing phase difference detection, thereby enabling an appropriate signal to be acquired during phase difference detection.

[0066] If the sum of signal charges generated in multiple photoelectric conversion elements 201 is used as a photoelectric conversion signal, there is a risk of deterioration in the linearity of pixel output characteristics when capturing an image of a subject with high illumination. Therefore, a potential structure is provided in which, when the signal charge of a photoelectric conversion element 201 becomes saturated, it leaks between the multiple photoelectric conversion elements 201 in the pixel. This allows a portion of the signal charge discharged to the floating diffusion region 203 to leak to adjacent photoelectric conversion elements 201, making it possible to reduce deterioration in linearity of pixel output characteristics when capturing an image with high illumination. However, if the signal charge leaks in various directions when the signal charge becomes saturated between the multiple photoelectric conversion elements 201 in the pixel, the accuracy of phase difference detection may be reduced.

[0067] Therefore, in this embodiment, a potential structure is used in which signal charge leaks easily and infrequently between multiple photoelectric conversion elements 201 within a pixel. In a pixel 107 in which multiple photoelectric conversion elements 201 share the same microlens 205, the signal output of each photoelectric conversion element 201 must be processed for phase difference detection. At the same time, the signal output of each photoelectric conversion element 201 must also be processed as a signal used for imaging. In this case, the signal charge photoelectrically converted by the multiple photoelectric conversion elements 201 sharing the same microlens 205 is summed and processed as a single pixel signal to reduce optical shot noise relative to the signal amount and improve readout speed. Even if the signal charge of only one photoelectric conversion element 201 reaches the saturated charge amount, excess signal charge leaks and accumulates in the other photoelectric conversion element 201 that performs phase difference detection. This reduces the degradation of the accuracy of phase difference detection.

[0068] The length of the trench structure of the element isolation 204b may be longer than the length of the trench structure of the element isolation 204a. Also, the relationship between the length of the trench structure of the element isolation 204a and the length of the trench structure of the element isolation 204b may be changed for each pixel.

[0069] In addition, in FIG. 6, the length of the trench structure of the element isolation 204e is longer than the length of the trench structure of the element isolation 204d, but the length of the trench structure of the element isolation 204d and the length of the trench structure of the element isolation 204e may be the same.

[0070] The configuration of a photoelectric conversion device according to a first modification of the first embodiment will be described with reference to Fig. 8. Note that the same components as those in the first embodiment are denoted by the same reference numerals, and the description of these components may be omitted or simplified. Note that Fig. 8 is a plan view as seen from the second surface side of the semiconductor substrate, similar to Fig. 6.

[0071] 8, in a pixel 107 (first pixel) of four pixels arranged in two rows and two columns, the length L1 in the second direction D2 of the trench structure of the element isolation 204a is longer than the length L2 in the first direction D1 of the trench structure of the element isolation 204b. In a pixel 107 (third pixel) other than the pixel 107 of the four pixels, the length L3 in the second direction D2 of the trench structure of the element isolation 204a is shorter than the length L4 of the trench structure of the element isolation 204b.

[0072] In this embodiment, the length L1 and the length L4 are the same, and the length L2 and the length L3 are the same, but this is not limiting, and the length L1 and the length L4 may be different lengths, and the length L2 and the length L3 may be different lengths.

[0073] For example, when color filters of the same color are arranged for a certain pixel 107 and another pixel 107, the phase difference detection accuracy can be improved for an object having vertical stripe contrast in one pixel. Furthermore, the phase difference detection accuracy can be improved for an object having horizontal stripe contrast in the other pixel. Therefore, according to the first modification, the phase difference detection accuracy can be improved for an object having either vertical stripe or horizontal stripe contrast. The lengths L3 and L4 can also be arranged for pixels having color filters of different colors.

[0074] The configuration of a photoelectric conversion device according to a second modified example of the first embodiment will be described with reference to Fig. 9. Note that the same components as those in the first embodiment are given the same reference numerals, and the description of these components may be omitted or simplified. Note that Fig. 9 is a plan view as viewed from the second surface side of the semiconductor substrate, similar to Fig. 6.

[0075] In the photoelectric conversion device according to the second modification, the trench structure of the element isolation 204a is connected to the trench structure of the element isolation 204c, but the trench structure of the element isolation 204b is not connected to the trench structure of the element isolation 204c.

[0076] According to the second modification, excess signal charge can be leaked to the side away from the floating diffusion region 203. This makes it easier to reduce excess signal charge from entering the floating diffusion region 203, and makes it easier to improve linearity under high illuminance.

[0077] Second Embodiment The configuration of a photoelectric conversion device according to a second embodiment of the present invention will be described with reference to FIG.

[0078] 10 is a plan view of the second surface side of the semiconductor substrate, similar to FIG. 6. Components similar to those in the first embodiment are denoted by the same reference numerals, and descriptions of these components may be omitted or simplified. Furthermore, other than the points described below, the second embodiment is substantially similar to the first embodiment, and therefore descriptions thereof will be omitted.

[0079] This embodiment differs from the first embodiment in that the width of the trench structure of the isolation 204a is different from the width of the trench structure of the isolation 204b. The trench structure of the isolation 204a has a length L1 in a first direction D1, and the trench structure of the isolation 204b has a length L2 in a second direction D2. The length L1 is greater than the length L2.

[0080] According to this embodiment, similarly to the first embodiment, the potential of the horizontal element isolation 204a relative to the signal charge can be made higher than the potential of the vertical element isolation 204b relative to the signal charge, thereby improving the phase difference detection accuracy for an object having vertical stripe contrast.

[0081] 10, the width of the trench structure of the element isolation 204a is wider than the width of the trench isolation of the element isolation 204b, but the width of the trench structure of the element isolation 204a may be narrower than the width of the trench isolation 204b. Also, the relationship between the width of the trench structure of the element isolation 204a and the width of the trench structure of the element isolation 204b may be changed for each pixel. Also, the width of the trench structure of the element isolation 204d and the width of the trench structure of the element isolation 204e may be the same.

[0082] Third Embodiment The configuration of a photoelectric conversion device according to a third embodiment of the present invention will be described with reference to FIG. 11. FIG. 11(a) is a plan view of the second surface side of a semiconductor substrate. FIG. 11(b) is an example of a cross-sectional view of a pixel 107 taken along the line A-A' in FIG. 11(a). Components similar to those in the first embodiment are denoted by the same reference numerals, and descriptions of these components may be omitted or simplified. Furthermore, other than the points described below, the third embodiment is substantially similar to the first embodiment, and therefore descriptions thereof will be omitted.

[0083] In this embodiment, the depth of one trench structure of the element isolation 204b and the depth of the other trench structure are different. For example, this embodiment differs from the first embodiment in that the depth of the trench structure of the element isolation 204b is shallower than the depth of the trench structure of the element isolation 204a. In addition, the trench structure of the element isolation 204b is formed from the second surface 207 side of the semiconductor substrate.

[0084] For example, the trench structure of the isolation 204a penetrates the semiconductor substrate, while the trench structure of the isolation 204b does not penetrate the semiconductor substrate. The trench structure of the isolation 204b is preferably formed to a thickness in the range of, for example, 1 / 2 to 1 / 20 of the thickness of the semiconductor substrate.

[0085] According to this embodiment, it is possible to provide paths through which signal charges easily leak and paths through which signal charges do not easily leak between multiple photoelectric conversion elements, thereby improving the accuracy of phase difference detection. Furthermore, since the trench structure can be formed on the side away from the microlens 205, it is possible to suppress a decrease in sensitivity due to light entering the trench structure.

[0086] The configuration of a photoelectric conversion device according to a modified example of the third embodiment will be described with reference to Fig. 12. Fig. 12(a) is a plan view of the second surface side of the semiconductor substrate. Fig. 12(b) is an example of a cross-sectional view of a pixel 107 taken along the line A-A' in Fig. 12(a).

[0087] In the modified example, the trench structure in the element isolation 204b is formed from the side of the first surface 208. According to the modified example, the trench structure is formed between the photoelectric conversion elements 201 in the pixel on the side closer to the second surface.

[0088] According to this embodiment, the trench structure of the element isolation 204b is formed at a position away from the first surface 208 side of the semiconductor substrate, so that the potential of each photoelectric conversion element can be easily designed.

[0089] Fourth Embodiment The configuration of a photoelectric conversion device according to a fourth embodiment of the present invention will be described with reference to Figures 13 to 15. Note that the same components as those in the first to third embodiments are denoted by the same reference numerals, and the description of these components may be omitted or simplified.

[0090] FIG. 13 is a diagram illustrating the concept of this embodiment. In this embodiment, the trench structure of the element isolation 204a and the trench structure of the element isolation 204b are the same. That is, the width and length of the trench structure between the photoelectric conversion elements in a pixel are the same. In this embodiment, the ease of leakage of signal charge in the horizontal direction and the ease of leakage of signal charge in the vertical direction are changed by controlling the implantation of a semiconductor region of a different conductivity type from the signal charge into the semiconductor substrate. For example, in FIG. 13, signal charge leakage between photoelectric conversion elements in the vertical direction is made more likely to occur than signal charge leakage between photoelectric conversion elements in the horizontal direction.

[0091] 14 shows a plan view of the second surface side of the semiconductor substrate of a pixel in this embodiment. In this embodiment, the element isolation 204a includes a trench structure and a semiconductor region 204a-1 (second semiconductor region) of a conductivity type different from that of the signal charge. The element isolation 204b includes a trench structure and a semiconductor region 204b-1 (third semiconductor region) of a conductivity type different from that of the signal charge. The width of the semiconductor region 204a-1 is wider than the width of the semiconductor region 204b-1.

[0092] According to this embodiment as well, it is possible to provide paths through which signal charges are likely to leak and paths through which signal charges are unlikely to leak between photoelectric conversion elements within a pixel.

[0093] FIG. 15 shows a modification of the pixel of this embodiment. In this embodiment, the element isolation 204a includes a trench structure and a semiconductor region 204a-1 (second semiconductor region) of a conductivity type different from that of the signal charge. The element isolation 204b includes a trench structure and a semiconductor region 204b-1 (third semiconductor region) of a conductivity type different from that of the signal charge. The element isolation 204d includes a trench structure and a semiconductor region (fourth semiconductor region) of a conductivity type different from that of the signal charge. The element isolation 204e includes a trench structure and a semiconductor region (fifth semiconductor region) of a conductivity type different from that of the signal charge. The impurity concentration of the semiconductor region 204a-1 is higher than the impurity concentration of the semiconductor region 204b-1. This also makes it possible to provide paths through which signal charge is likely to leak and paths through which signal charge is unlikely to leak between photoelectric conversion elements in a pixel.

[0094] The impurity concentration of the semiconductor region 204a-1 can be set to, for example, 1E15 to 1E19 [ / cm^3]. The impurity concentration of the semiconductor region 204b-1 can be set to, for example, 1E15 to 1E19 [ / cm^3]. The impurity concentration of the semiconductor region 204b-1 is preferably 4 / 5 or less of that of the semiconductor region 204a-1.

[0095] Fifth Embodiment The fifth embodiment can be applied to any of the first to fourth embodiments. FIG. 16(a) is a schematic diagram illustrating a device 9191 including a semiconductor device 930 of this embodiment. The photoelectric conversion device of each of the above-described embodiments can be used for the semiconductor device 930. The device 9191 including the semiconductor device 930 will be described in detail. In addition to the semiconductor device 910, the semiconductor device 930 can include a package 920 that houses the semiconductor device 910. The package 920 can include a base to which the semiconductor device 910 is fixed and a lid such as glass that faces the semiconductor device 910. The package 920 can further include bonding members such as bonding wires and bumps that connect terminals provided on the base to terminals provided on the semiconductor device 910.

[0096] The equipment 9191 can include at least one of an optical device 940, a control device 950, a processing device 960, a display device 970, a storage device 980, and a mechanical device 990. The optical device 940 corresponds to the semiconductor device 930. The optical device 940 is, for example, a lens, a shutter, or a mirror, and includes an optical system that guides light to the semiconductor device 930. The control device 950 controls the semiconductor device 930. The control device 950 is, for example, a semiconductor device such as an ASIC.

[0097] The processing device 960 processes the signal output from the semiconductor device 930. The processing device 960 is a semiconductor device such as a CPU or ASIC for configuring an AFE (analog front end) or a DFE (digital front end). The display device 970 is an EL display device or a liquid crystal display device that displays information (images) obtained by the semiconductor device 930. The storage device 980 is a magnetic device or a semiconductor device that stores information (images) obtained by the semiconductor device 930. The storage device 980 is a volatile memory such as an SRAM or a DRAM, or a non-volatile memory such as a flash memory or a hard disk drive.

[0098] The mechanical device 990 has a moving part or a propulsion part such as a motor or an engine. In the device 9191, the signal output from the semiconductor device 930 is displayed on the display device 970, or transmitted to the outside by a communication device (not shown) provided in the device 9191. For this purpose, the device 9191 preferably further includes a memory device 980 and a processing device 960 in addition to the memory circuit and arithmetic circuit provided in the semiconductor device 930. The mechanical device 990 may be controlled based on the signal output from the semiconductor device 930.

[0099] The device 9191 is also suitable for electronic devices such as information terminals with a photographing function (for example, smartphones and wearable devices) and cameras (for example, interchangeable lens cameras, compact cameras, video cameras, and surveillance cameras). The mechanical device 990 in the camera can drive components of the optical device 940 for zooming, focusing, and shutter operation. Alternatively, the mechanical device 990 in the camera can move the semiconductor device 930 for vibration isolation operations.

[0100] Furthermore, the device 9191 may be transportation equipment such as a vehicle, a ship, or an aircraft. The mechanical device 990 in transportation equipment can be used as a moving device. The device 9191 as transportation equipment is suitable for transporting the semiconductor device 930 or for assisting and / or automating driving (piloting) using a photographing function. The processing device 960 for assisting and / or automating driving (piloting) can perform processing for operating the mechanical device 990 as a moving device based on information obtained by the semiconductor device 930. Alternatively, the device 9191 may be a medical device such as an endoscope, a measuring device such as a distance measuring sensor, an analytical device such as an electron microscope, an office machine such as a copier, or an industrial device such as a robot.

[0101] According to the above-described embodiment, it is possible to obtain good pixel characteristics. Therefore, the value of the semiconductor device can be increased. In this case, increasing the value corresponds to at least one of adding functions, improving performance, improving characteristics, improving reliability, improving manufacturing yield, reducing environmental impact, reducing costs, reducing size, and reducing weight.

[0102] Therefore, if the semiconductor device 930 according to this embodiment is used in the equipment 9191, the value of the equipment can also be improved. For example, by installing the semiconductor device 930 in a transport equipment, excellent performance can be obtained when photographing the exterior of the transport equipment or measuring the external environment. Therefore, when manufacturing and selling transport equipment, deciding to install the semiconductor device according to this embodiment in the transport equipment is advantageous in terms of improving the performance of the transport equipment itself. In particular, the semiconductor device 930 is suitable for transport equipment that performs driving assistance and / or automatic driving of the transport equipment using information obtained by the semiconductor device.

[0103] The photoelectric conversion system and the moving object of this embodiment will be described with reference to FIGS. 16(b) and 16(c).

[0104] FIG. 16(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 8 includes a photoelectric conversion device 80. The photoelectric conversion device 80 is the photoelectric conversion device (image capture device) described in any of the above embodiments. The photoelectric conversion system 8 includes an image processing unit 801 that performs image processing on multiple pieces of image data acquired by the photoelectric conversion device 80, and a parallax acquisition unit 802 that calculates parallax (phase difference between parallax images) from the multiple pieces of image data acquired by the photoelectric conversion system 8. The photoelectric conversion system 8 also includes a distance acquisition unit 803 that calculates the distance to an object based on the calculated parallax, and a collision determination unit 804 that determines whether or not there is a possibility of a collision based on the calculated distance. Here, the parallax acquisition unit 802 and the distance acquisition unit 803 are examples of distance information acquisition means that acquire information about the distance to the object. That is, the distance information is information about the parallax, the defocus amount, the distance to the object, etc. The collision determination unit 804 may determine the possibility of a collision using any of this distance information. The distance information acquisition means may be realized by dedicated hardware, a software module, a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or a combination thereof.

[0105] The photoelectric conversion system 8 is connected to a vehicle information acquisition device 810 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 8 is also connected to a control ECU 820, which is a control device that outputs a control signal to generate a braking force for the vehicle based on the determination result of the collision determination unit 804. The photoelectric conversion system 8 is also connected to an alarm device 830 that issues an alarm to the driver based on the determination result of the collision determination unit 804. For example, if the determination result of the collision determination unit 804 indicates a high possibility of a collision, the control ECU 820 performs vehicle control to avoid the collision and mitigate damage by applying the brakes, releasing the accelerator, suppressing engine output, etc. The alarm device 830 warns the user by sounding an alarm, displaying alarm information on the screen of a car navigation system, etc., or vibrating the seat belt or steering wheel.

[0106] In this embodiment, the photoelectric conversion system 8 captures an image of the surroundings of the vehicle, for example, the front or rear.

[0107] 16(c) shows a photoelectric conversion system when capturing an image of the area ahead of the vehicle (image capturing range 850). A vehicle information acquisition device 810 sends instructions to the photoelectric conversion system 8 or the photoelectric conversion device 80. This configuration can further improve the accuracy of distance measurement.

[0108] Although the above describes an example of control to prevent collision with other vehicles, the present invention can also be applied to control of automatic driving by following other vehicles, and control of automatic driving to prevent deviation from a lane. Furthermore, the photoelectric conversion system is not limited to vehicles such as the subject vehicle, but can be applied to moving bodies (moving devices) such as ships, aircraft, and industrial robots. In addition, the present invention can be applied not only to moving bodies but also to a wide range of devices that use object recognition, such as intelligent transport systems (ITS).

[0109] The above-described embodiments can be modified as appropriate without departing from the spirit of the present invention. The disclosure of this specification includes not only what is described herein but also all matters that can be understood from the specification and the accompanying drawings. The disclosure of this specification also includes the complement of the concepts described herein. In other words, if the specification contains a statement that "A is greater than B," even if the statement that "A is not greater than B" is omitted, the specification can still be said to disclose that "A is not greater than B." This is because the statement that "A is greater than B" presupposes that the case in which "A is not greater than B" is taken into consideration.

[0110] The disclosure of this embodiment includes the following configurations and methods.

[0111] (Configuration 1) a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, wherein each of the first pixel and the second pixel is disposed on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and includes a first photoelectric conversion element and a second photoelectric conversion element that are sequentially arranged in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element that are sequentially arranged in the first direction, and a floating diffusion region shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, wherein the first photoelectric conversion element and the third photoelectric conversion element are sequentially arranged in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are sequentially arranged in the second direction; a floating diffusion region disposed between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element; a first element isolation including a trench structure is disposed between the first pixel and the second pixel; in the first pixel, a second element isolation including a trench structure is disposed between the first photoelectric conversion element and the second photoelectric conversion element; and a third element isolation including a trench structure is disposed between the first photoelectric conversion element and the third photoelectric conversion element; and in a planar view of the first surface, a length in the first direction of the trench structure of the second element isolation is longer than a length in the second direction of the trench structure of the third element isolation.

[0112] (Configuration 2) A photoelectric conversion device having a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, wherein each of the first pixel and the second pixel is arranged on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and has a first photoelectric conversion element and a second photoelectric conversion element that are aligned in order in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element that are aligned in order in the first direction, and a floating diffusion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, wherein the first photoelectric conversion element and the third photoelectric conversion element are aligned in order in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are aligned in order in the second direction, and the floating diffusion a first element isolation including a trench structure is arranged between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element, and between the first pixel and the second pixel, a second element isolation including a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element in the first pixel, and a third element isolation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element, wherein, in a plan view of the first surface, an area of ​​the trench structure in the second element isolation is different from an area of ​​the trench structure in the third element isolation, and a difference between the area of ​​the trench structure in the second element isolation and the area of ​​the trench structure in the third element isolation is 5% or more.

[0113] (Configuration 3) a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the second ... a first element isolation including a trench structure is arranged between the first pixel and the second pixel, the first element isolation including a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element in the first pixel, a second element isolation including a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element in the first pixel, and a third element isolation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element, the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element each include a first semiconductor region of a first conductivity type that accumulates signal charge, and in a planar view of the first surface, a length in the first direction of a second semiconductor region of a second conductivity type arranged adjacent to the trench structure of the second element isolation is longer than a length in the second direction of a third semiconductor region of the second conductivity type arranged adjacent to the trench structure of the third element isolation.

[0114] (Configuration 4) a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the first photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the second ... second photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the second photoelectric conversion element, the second photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the second photoelectric conversion element, the second photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the second photoelectric conversion element, the second photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the second photoelectric conversion element, the second photoelectric conversion element, and the fourth photoelectric conversion element; a floating diffusion portion shared by the second photoelectric conversion element, the and the third photoelectric conversion element, a first element isolation including a trench structure is arranged between the first pixel and the second pixel, a second element isolation including a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element in the first pixel, and a third element isolation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element, the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element each include a first semiconductor region of a first conductivity type that accumulates signal charge, and in a plan view of the first surface, an impurity concentration of a second semiconductor region of a second conductivity type arranged adjacent to the trench structure of the second element isolation is higher than an impurity concentration of a third semiconductor region of the second conductivity type arranged adjacent to the trench structure of the third element isolation.

[0115] (Configuration 5) a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, wherein each of the first pixel and the second pixel is disposed on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and includes a first photoelectric conversion element and a second photoelectric conversion element that are sequentially arranged in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element that are sequentially arranged in the first direction, and a floating diffusion region shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, wherein the first photoelectric conversion element and the third photoelectric conversion element are sequentially arranged in a second direction that intersects the first direction, and the first pixel and the second pixel are arranged in a row with the fourth photoelectric conversion element in the second direction, the floating diffusion region is arranged between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element, a first element isolation including a trench structure is arranged between the first pixel and the second pixel, a second element isolation is arranged between the first photoelectric conversion element and the second photoelectric conversion element in the first pixel, and a third element isolation is arranged between the first photoelectric conversion element and the third photoelectric conversion element, and a depth of one trench structure of the second element isolation and the third element isolation is different from a depth of the other trench structure.

[0116] (Configuration 6) The photoelectric conversion device described in configuration 2, characterized in that, in a planar view of the first surface, the length of the trench structure in the second direction in the second element isolation is longer than the length of the trench structure in the third element isolation in the first direction.

[0117] (Configuration 7) a third pixel including a first photoelectric conversion element and a second photoelectric conversion element arranged in the first direction on the semiconductor substrate, a third photoelectric conversion element and a fourth photoelectric conversion element arranged in the first direction, and a floating diffusion region shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element; wherein in the third pixel, a second isolation having a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element, and a third isolation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element; and wherein, in the planar view, the length of the trench structure of the second isolation in the third pixel in the second direction is shorter than the length of the trench structure of the third isolation in the third pixel in the first direction.

[0118] (Configuration 8) The photoelectric conversion device according to any one of structures 1 to 7, characterized in that, in a planar view of the first surface, the trench structure in the second element isolation and the trench structure in the third element isolation are connected to the trench structure in the first element isolation.

[0119] (Configuration 9) The photoelectric conversion device according to any one of structures 1 to 7, characterized in that, in the planar view, the trench structure in the second element isolation is connected to the trench structure in the first element isolation, and the trench structure in the third element isolation is not connected to the trench structure in the first element isolation.

[0120] (Configuration 10) The photoelectric conversion device described in any one of structures 1 to 9, wherein each of the second element isolation and the third element isolation includes an insulator, and the area of ​​the insulator in the second element isolation is different from the area of ​​the insulator in the third element isolation.

[0121] (Configuration 11) 11. The photoelectric conversion device according to any one of configurations 1 to 10, wherein the second isolation and the third isolation each have a semiconductor region of a conductivity type different from that of a signal charge.

[0122] (Configuration 12) 12. The photoelectric conversion device according to any one of structures 1 to 11, wherein the trench structure in the second element isolation and the trench structure in the third element isolation are formed to a depth that does not penetrate the semiconductor substrate.

[0123] (Configuration 13) 13. The photoelectric conversion device according to any one of configurations 1 to 12, wherein the potential of the second element isolation with respect to the signal charge is higher than the potential of the third element isolation with respect to the signal charge.

[0124] (Configuration 14) a transfer gate is disposed between the first photoelectric conversion element and the floating diffusion region; 14. The photoelectric conversion device according to any one of structures 1 to 13, wherein the transfer gate extends from the first surface toward the second surface.

[0125] (Configuration 15) 15. The photoelectric conversion device according to any one of structures 1 to 14, wherein the trench structure in the first element isolation penetrates from the first surface to the second surface.

[0126] (Configuration 16) The photoelectric conversion device described in configuration 1, characterized in that in the first pixel, a fourth element isolation including a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth element isolation including a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element, and in a planar view of the first surface, the length of the trench structure in the fourth element isolation in the first direction is the same as the length of the trench structure in the fifth element isolation in the second direction.

[0127] (Configuration 17) The photoelectric conversion device described in configuration 2, characterized in that in the first pixel, a fourth element isolation including a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth element isolation including a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element, and in a planar view of the first surface, the length of the trench structure in the fourth element isolation in the second direction is the same as the length of the trench structure in the fifth element isolation in the first direction.

[0128] (Configuration 18) The photoelectric conversion device described in configuration 3, characterized in that in the first pixel, a fourth element isolation including a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth element isolation including a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element, and in a planar view of the first surface, the length in the first direction of the fourth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fourth element isolation is the same as the length in the second direction of the fifth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fifth element isolation.

[0129] (Configuration 19) The photoelectric conversion device described in configuration 4, characterized in that in the first pixel, a fourth element isolation including a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth element isolation including a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element, and in a planar view of the first surface, the impurity concentration of the fourth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fourth element isolation is the same as the impurity concentration of the fifth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fifth element isolation.

[0130] (Configuration 20) The photoelectric conversion device described in configuration 5, characterized in that in the first pixel, a fourth element isolation including a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth element isolation including a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element, and in a planar view of the first surface, the depth of the trench structure in the fourth element isolation is the same as the depth of the trench structure in the fifth element isolation.

[0131] (Configuration 21) 21. An apparatus including the photoelectric conversion device according to any one of configurations 1 to 20, comprising: an optical device that guides light to the photoelectric conversion device; a control device that controls the photoelectric conversion device; and a processing device that processes a signal output from the photoelectric conversion device. An apparatus characterized by further comprising at least one of a display device that displays information obtained by the photoelectric conversion device, a storage device that stores information obtained by the photoelectric conversion device, and a mechanical device that operates based on information obtained by the photoelectric conversion device. [Explanation of symbols]

[0132] 107 pixels 201 Photoelectric conversion element 202 Transfer Gate 203 Floating diffusion section 204 Element isolation 205 Micro Lens D1 First direction D2 Second direction

Claims

1. A photoelectric conversion device having a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, Each of the first pixel and the second pixel is arranged on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and includes a first photoelectric conversion element and a second photoelectric conversion element aligned in order in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element aligned in order in the first direction, and a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, the first photoelectric conversion element and the third photoelectric conversion element are arranged side by side in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are arranged side by side in the second direction, the floating diffusion region is disposed between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element; a first element isolation including a trench structure is disposed between the first pixel and the second pixel; In the first pixel, a second isolation including a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element, and a third isolation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element. A photoelectric conversion device characterized in that, in a planar view of the first surface, the length of the trench structure in the second element isolation in the first direction is longer than the length of the trench structure in the third element isolation in the second direction.

2. A photoelectric conversion device having a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, Each of the first pixel and the second pixel is arranged on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and includes a first photoelectric conversion element and a second photoelectric conversion element aligned in order in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element aligned in order in the first direction, and a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, the first photoelectric conversion element and the third photoelectric conversion element are arranged side by side in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are arranged side by side in the second direction, the floating diffusion region is disposed between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element; a first element isolation including a trench structure is disposed between the first pixel and the second pixel; in the first pixel, a second isolation having a trench structure is disposed between the first photoelectric conversion element and the second photoelectric conversion element, and a third isolation having a trench structure is disposed between the first photoelectric conversion element and the third photoelectric conversion element; an area of ​​a trench structure in the second element isolation region and an area of ​​a trench structure in the third element isolation region are different in a plan view of the first surface; a difference between an area of ​​the trench structure in the second element isolation and an area of ​​the trench structure in the third element isolation being 5% or more;

3. A photoelectric conversion device having a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, Each of the first pixel and the second pixel is arranged on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and includes a first photoelectric conversion element and a second photoelectric conversion element aligned in order in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element aligned in order in the first direction, and a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, the first photoelectric conversion element and the third photoelectric conversion element are arranged side by side in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are arranged side by side in the second direction, the floating diffusion region is disposed between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element; a first element isolation including a trench structure is disposed between the first pixel and the second pixel; in the first pixel, a second isolation having a trench structure is disposed between the first photoelectric conversion element and the second photoelectric conversion element, and a third isolation having a trench structure is disposed between the first photoelectric conversion element and the third photoelectric conversion element; the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element each include a first semiconductor region of a first conductivity type that accumulates signal charges; A photoelectric conversion device characterized in that, in a planar view of the first surface, the length in the first direction of a second semiconductor region of a second conductivity type arranged adjacent to the trench structure of the second element isolation is longer than the length in the second direction of a third semiconductor region of the second conductivity type arranged adjacent to the trench structure of the third element isolation.

4. A photoelectric conversion device having a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, Each of the first pixel and the second pixel is arranged on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and includes a first photoelectric conversion element and a second photoelectric conversion element aligned in order in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element aligned in order in the first direction, and a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, the first photoelectric conversion element and the third photoelectric conversion element are arranged side by side in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are arranged side by side in the second direction, the floating diffusion region is disposed between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element; a first element isolation including a trench structure is disposed between the first pixel and the second pixel; in the first pixel, a second isolation having a trench structure is disposed between the first photoelectric conversion element and the second photoelectric conversion element, and a third isolation having a trench structure is disposed between the first photoelectric conversion element and the third photoelectric conversion element; the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element each include a first semiconductor region of a first conductivity type that accumulates signal charges; a second semiconductor region of the second conductivity type arranged adjacent to the trench structure of the second element isolation, the second semiconductor region having an impurity concentration higher than a third semiconductor region of the second conductivity type arranged adjacent to the trench structure of the third element isolation, in a planar view of the first surface;

5. A photoelectric conversion device having a first pixel that receives light through a first microlens and a second pixel that receives light through a second microlens, Each of the first pixel and the second pixel is arranged on a semiconductor substrate having a first surface and a second surface opposite to the first surface, and includes a first photoelectric conversion element and a second photoelectric conversion element aligned in order in a first direction, a third photoelectric conversion element and a fourth photoelectric conversion element aligned in order in the first direction, and a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, the first photoelectric conversion element and the third photoelectric conversion element are arranged side by side in a second direction intersecting the first direction, and the second photoelectric conversion element and the fourth photoelectric conversion element are arranged side by side in the second direction, the floating diffusion region is disposed between the first photoelectric conversion element and the fourth photoelectric conversion element and between the second photoelectric conversion element and the third photoelectric conversion element; a first element isolation including a trench structure is disposed between the first pixel and the second pixel; in the first pixel, a second element isolation is disposed between the first photoelectric conversion element and the second photoelectric conversion element, and a third element isolation is disposed between the first photoelectric conversion element and the third photoelectric conversion element; a trench structure of the second isolation layer and a trench structure of the third isolation layer, the trench structure having a depth different from the depth of the other trench structure;

6. 3. The photoelectric conversion device according to claim 2, wherein, in a planar view of the first surface, the length of the trench structure in the second direction in the second element isolation is longer than the length of the trench structure in the third element isolation in the first direction.

7. a third pixel; the third pixel includes a first photoelectric conversion element and a second photoelectric conversion element that are arranged in order in the first direction and are disposed on the semiconductor substrate, a third photoelectric conversion element and a fourth photoelectric conversion element that are arranged in order in the first direction, and a floating diffusion portion shared by the first photoelectric conversion element, the second photoelectric conversion element, the third photoelectric conversion element, and the fourth photoelectric conversion element, in the third pixel, a second element isolation having a trench structure is arranged between the first photoelectric conversion element and the second photoelectric conversion element, and a third element isolation including a trench structure is arranged between the first photoelectric conversion element and the third photoelectric conversion element; 7. The photoelectric conversion device according to claim 6, characterized in that, in the planar view, the length in the second direction of the trench structure of the second element isolation in the third pixel is shorter than the length in the first direction of the trench structure of the third element isolation in the third pixel.

8. 2. The photoelectric conversion device according to claim 1, wherein, in a plan view of the first surface, the trench structure in the second element isolation and the trench structure in the third element isolation are connected to the trench structure in the first element isolation.

9. 5. The photoelectric conversion device according to claim 4, wherein, in the planar view, the trench structure in the second element isolation is connected to the trench structure in the first element isolation, and the trench structure in the third element isolation is not connected to the trench structure in the first element isolation.

10. each of the second isolation and the third isolation includes an insulator; 2. The photoelectric conversion device according to claim 1, wherein an area of ​​the insulator in the second isolation region is different from an area of ​​the insulator in the third isolation region.

11. 9. The photoelectric conversion device according to claim 8, wherein each of the second isolation layer and the third isolation layer has a semiconductor region of a conductivity type different from that of the signal charge.

12. 2. The photoelectric conversion device according to claim 1, wherein the trench structure in the second isolation layer and the trench structure in the third isolation layer are formed to a depth that does not penetrate the semiconductor substrate.

13. 3. The photoelectric conversion device according to claim 2, wherein the trench structure in the second isolation layer and the trench structure in the third isolation layer are formed to a depth that does not penetrate the semiconductor substrate.

14. 2. The photoelectric conversion device according to claim 1, wherein a potential level of the second element isolation with respect to the signal charge is higher than a potential level of the third element isolation with respect to the signal charge.

15. 3. The photoelectric conversion device according to claim 2, wherein the potential of the second element isolation with respect to the signal charge is higher than the potential of the third element isolation with respect to the signal charge.

16. 4. The photoelectric conversion device according to claim 3, wherein the potential of the second element isolation with respect to the signal charge is higher than the potential of the third element isolation with respect to the signal charge.

17. 5. The photoelectric conversion device according to claim 4, wherein the potential of the second element isolation with respect to the signal charge is higher than the potential of the third element isolation with respect to the signal charge.

18. 6. The photoelectric conversion device according to claim 5, wherein the potential of the second element isolation with respect to the signal charge is higher than the potential of the third element isolation with respect to the signal charge.

19. a transfer gate is disposed between the first photoelectric conversion element and the floating diffusion region; 2. The photoelectric conversion device according to claim 1, wherein the transfer gate extends from the first surface toward the second surface.

20. 2. The photoelectric conversion device according to claim 1, wherein the trench structure in the first isolation penetrates from the first surface to the second surface.

21. 3. The photoelectric conversion device according to claim 2, wherein the trench structure in the first isolation penetrates from the first surface to the second surface.

22. 4. The photoelectric conversion device according to claim 3, wherein the trench structure in the first isolation penetrates from the first surface to the second surface.

23. 5. The photoelectric conversion device according to claim 4, wherein the trench structure in the first element isolation penetrates from the first surface to the second surface.

24. 6. The photoelectric conversion device according to claim 5, wherein the trench structure in the first isolation penetrates from the first surface to the second surface.

25. in the first pixel, a fourth isolation having a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth isolation having a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element; 2. The photoelectric conversion device according to claim 1, wherein, in a planar view of the first surface, the length of the trench structure in the fourth element isolation in the first direction is the same as the length of the trench structure in the fifth element isolation in the second direction.

26. in the first pixel, a fourth isolation having a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth isolation having a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element; 3. The photoelectric conversion device according to claim 2, wherein, in a planar view of the first surface, the length of the trench structure in the fourth element isolation in the second direction is the same as the length of the trench structure in the fifth element isolation in the first direction.

27. in the first pixel, a fourth isolation having a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth isolation having a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element; 4. The photoelectric conversion device according to claim 3, wherein, in a planar view of the first surface, the length in the first direction of the fourth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fourth element isolation is the same as the length in the second direction of the fifth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fifth element isolation.

28. in the first pixel, a fourth isolation having a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth isolation having a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element; 5. The photoelectric conversion device according to claim 4, wherein, in a planar view of the first surface, the impurity concentration of the fourth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fourth element isolation is the same as the impurity concentration of the fifth semiconductor region of the second conductivity type arranged adjacent to the trench structure in the fifth element isolation.

29. in the first pixel, a fourth isolation having a trench structure is arranged between the third photoelectric conversion element and the fourth photoelectric conversion element, and a fifth isolation having a trench structure is arranged between the second photoelectric conversion element and the fourth photoelectric conversion element; 6. The photoelectric conversion device according to claim 5, wherein, in a plan view of the first surface, the depth of the trench structure in the fourth element isolation is the same as the depth of the trench structure in the fifth element isolation.

30. An apparatus comprising the photoelectric conversion device according to any one of claims 1 to 29, an optical device that guides light to the photoelectric conversion device; a control device that controls the photoelectric conversion device; a processing device that processes a signal output from the photoelectric conversion device; a display device that displays information obtained by the photoelectric conversion device; a storage device that stores information obtained by the photoelectric conversion device; and and a mechanical device that operates based on information obtained by the photoelectric conversion device.

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