Sensor

The sensor achieves accurate detection by stabilizing temperature and reducing noise through a conductive layer configuration and control unit corrections, addressing instability in existing sensors.

JP2025126378APending Publication Date: 2025-08-29KK TOSHIBA
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Patent Information

Application Number
JP2024022503
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-02-19
Publication Date
2025-08-29

AI Technical Summary

Technical Problem

Existing sensors face challenges in achieving highly accurate detection due to instability and noise interference, particularly in environments with varying temperatures and detection targets.

Method used

The sensor design includes a conductive layer with specific configurations and gaps to stabilize temperature and reduce noise, utilizing a control unit to detect electrical resistance changes, and incorporating temperature detection elements for correction, ensuring uniform heat distribution and accurate detection.

Benefits of technology

The design enables highly accurate and stable detection of environmental conditions by minimizing ambient temperature influences and noise, allowing for precise measurement of detection targets.

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Abstract

To provide a sensor capable of highly accurate detection.SOLUTION: According to an embodiment, a sensor includes a base including a first base region including a first intermediate region, a first detection unit, a first conductive layer fixed to the base, and a first conductive layer terminal electrically connected to the first conductive layer. The first conductive layer includes a first conductive region and a first other conductive region. The first detection unit includes a first fixed portion fixed to the first base region and a first element supported by the first fixed portion. The first element includes a first resistance member and a first conductive member. The position of the first intermediate region in a second direction intersecting a first direction from the first base region to the first fixed portion is between the position of the first conductive region in the second direction and the position of the first other conductive region in the second direction. A first gap is provided between the first intermediate region and the first element in the first direction.SELECTED DRAWING: Figure 1
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Description

[Technical Field]

[0001] FIELD OF THE INVENTION An embodiment of the present invention relates to a sensor. [Background technology]

[0002] For example, there are sensors that use MEMS (Micro Electro Mechanical Systems) elements, etc. Stable detection is desired for sensors. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-41893 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments provide a sensor capable of highly accurate detection. [Means for solving the problem]

[0005] According to an embodiment, the sensor includes a base including a first base region including a first intermediate region, a first detection unit, a first conductive layer fixed to the base, and a first conductive layer terminal electrically connected to the first conductive layer. The first conductive layer includes a first conductive region and a first other conductive region. The first detection unit includes a first fixed portion fixed to the first base region and a first element supported by the first fixed portion. The first element includes a first resistance member and a first conductive member. The position of the first intermediate region in a second direction intersecting a first direction from the first base region to the first fixed portion is between the position of the first conductive region in the second direction and the position of the first other conductive region in the second direction. A first gap is provided between the first intermediate region and the first element in the first direction. [Brief explanation of the drawings]

[0006] [Figure 1] 1(a) to 1(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 2] 2A and 2B are schematic plan views illustrating the sensor according to the first embodiment. [Figure 3] FIG. 3 is a schematic plan view illustrating the sensor according to the first embodiment. [Figure 4] 4(a) to 4(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 5] 5(a) to 5(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 6] 6(a) to 6(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 7] 7(a) to 7(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 8] 8(a) to 8(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. [Figure 9] 9(a) to 9(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) 1(a) to 1(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. 2(a), 2(b), and 3 are schematic plan views illustrating the sensor according to the first embodiment. Fig. 1(a) is a cross-sectional view taken along line A1-A2 in Fig. 2(a), Fig. 1(b) is a cross-sectional view taken along line A3-A4 in Fig. 2(a), and Fig. 1(c) is a cross-sectional view taken along line A5-A6 in Fig. 2(a). As shown in these figures, the sensor 110 according to the embodiment includes a base 40, a first detection unit 10A, and a first conductive layer 51. The sensor 110 may further include a first conductive layer terminal 51T. As will be described later, the sensor 110 may further include a second detection unit 10B, etc.

[0009] The base 40 includes a first base region 41. The first base region 41 includes a first intermediate region 41c. The base 40 may include, for example, a substrate 40s, a first insulating layer 40i, and a second insulating layer 40j. The substrate 40s may be, for example, a semiconductor substrate. The substrate 40s may include, for example, a silicon substrate. The first insulating layer 40i is provided on the substrate 40s. The second insulating layer 40j is provided on the first insulating layer 40i. The first insulating layer 40i may include, for example, silicon oxide. The second insulating layer 40j may include, for example, silicon nitride.

[0010] The first conductive layer 51 is fixed to the base 40. In this example, the first conductive layer 51 is provided between the first insulating layer 40i and the second insulating layer 40j. The first conductive layer 51 includes a first conductive region 51c and a first other conductive region 51d. The first conductive layer terminal 51T is electrically connected to the first conductive layer 51.

[0011] The first detection unit 10A includes a first fixed portion 11F fixed to the first base region 41 and a first element 11E supported by the first fixed portion 11F. The first element 11E includes a first resistance member 11 and a first conductive member 21.

[0012] The first direction D1 from the first base region 41 to the first fixing portion 11F is defined as the Z-axis direction. The direction perpendicular to the Z-axis direction is defined as the Y-axis direction. The direction perpendicular to the Z-axis direction and the Y-axis direction is defined as the X-axis direction.

[0013] 2(b), the position of the first intermediate region 41c in a second direction D2 intersecting with the first direction D1 is between the position of the first conductive region 51c in the second direction D2 and the position of the first other conductive region 51d in the second direction D2. The second direction D2 may be, for example, the Y-axis direction.

[0014] As shown in FIG. 1(a), a first gap g1 is provided between the first intermediate region 41c and the first element 11E in the first direction D1.

[0015] 1(a), the first resistance member 11 includes a first resistance portion 11a and a first other resistance portion 11b, and the first conductive member 21 includes a first conductive portion 21a and a first other conductive portion 21b.

[0016] In an embodiment, a first power is supplied between the first conductive portion 21a and the first other conductive portion 21b. A first electrical resistance between the first resistive portion 11a and the first other resistive portion 11b is detected. As shown in FIG. 3 , the sensor 110 may be provided with a controller 70. The controller 70 may be configured to supply the first power. The controller 70 may be configured to detect the first electrical resistance.

[0017] The first electrical resistance varies depending on the detection target present in the space around the first element 11E. For example, as described above, supplying the first power to the first conductive member 21 increases the temperature of the first element 11E. The first power may be supplied in pulses, for example. After the temperature of the first element 11E increases due to the first power, the temperature of the first element 11E decreases toward its original temperature. Heat from the first element 11E is dissipated via the detection target present around the first element 11E. Therefore, the temperature of the first element 11E depends on the state of the detection target present around the first element 11E. The first electrical resistance of the first element 11E varies depending on the temperature of the first element 11E. The state of the detection target can be detected by detecting the first electrical resistance. The detection target is, for example, a gas. For example, the state of the detection target includes, among other things, the type and concentration of the detection target (gas).

[0018] In the embodiment, a first conductive layer 51 is provided. The first conductive layer 51 is provided on a base 40 having a large heat capacity. The first conductive layer 51 functions as a heat spreader layer. This makes it possible, for example, to make the temperature change characteristics of the first element 11E less susceptible to the influence of the ambient temperature. For example, stable detection becomes possible. For example, highly accurate detection becomes possible. According to the embodiment, a sensor capable of highly accurate detection can be provided.

[0019] As described above, a first conductive layer terminal 51T is provided, electrically connected to the first conductive layer 51. The potential of the first conductive layer terminal 51T may be fixed. The potential of the first conductive layer terminal 51T may be, for example, ground potential. The first conductive layer 51 functions as, for example, a ground layer. This stabilizes the potential, suppresses noise, and achieves higher accuracy.

[0020] For example, the potential of the first resistive portion 11a may be set to a first potential (ground potential) of the first conductive layer terminal 51T. The potential of the first conductive portion 21a may be set to a first potential (ground potential). The first conductive layer terminal 51T may be electrically connected to the control unit 70. The first other resistive portion 11b may be electrically connected to the control unit 70. The first other conductive portion 21b may be electrically connected to the control unit 70.

[0021] In the embodiment, the first conductive region area of ​​the first conductive region 51c in the first plane PL1 intersecting the first direction D1 is preferably larger than the first element area of ​​the first element 11E in the first plane PL1. The first plane PL1 is, for example, the XY plane. The first other conductive region area of ​​the first other conductive region 51d in the first plane PL1 is preferably larger than the first element area of ​​the first element 11E in the first plane PL1. These larger conductive regions can, for example, improve heat uniformity and enable more stable detection.

[0022] 1(c), 2(a), and 2(c), the sensor 110 may further include a first temperature detection element 58. The control unit 70 may be configured to output a value obtained by correcting the first electrical resistance using the value detected by the first temperature detection element 58. This allows for more accurate detection results to be obtained.

[0023] As shown in FIGS. 1(c) and 2(b), the first conductive layer 51 may further include a first temperature detection region 51x. The first temperature detection region 51x may be continuous with the first conductive region 51c. The boundary between these conductive regions may be clear or unclear. The first temperature detection region 51x may overlap the first temperature detection element 58 in the first direction D1. This makes the temperature in the first temperature detection element 58 more stable.

[0024] As shown in FIG. 2(b), the first conductive layer 51 may further include a first fixed portion region 51a continuous with the first conductive region 51c. The position of the first fixed portion 11F in the third direction D3 is between the position of the first fixed portion region 51a in the third direction D3 and the position of the first intermediate region 41c in the third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the X-axis direction. By providing the first fixed portion region 51a, a more uniform temperature distribution can be obtained.

[0025] As shown in FIGS. 1(a) and 2(b), the first detection unit 10A may further include a first other fixed portion 11G fixed to the first base region 41. The first element 11E is further supported by the first other fixed portion 11G. The first conductive layer 51 further includes a first other fixed portion region 51b continuous with the first conductive region 51c. The position of the first other fixed portion 11G in the third direction D3 is between the position of the first intermediate region 41c in the third direction D3 and the position of the first other fixed portion region 51b in the third direction D3. The provision of the first other fixed portion region 51b allows for a more uniform temperature distribution.

[0026] 1(b) and 2(b), the sensor 110 may further include a second detection portion 10B. The substrate 40 may further include a second substrate region 42 including a second intermediate region 42c.

[0027] The second detection unit 10B includes a second fixed portion 12F fixed to the second base region 42 and a second element 12E supported by the second fixed portion 12F. The second element 12E includes a second resistance member 12.

[0028] The first conductive layer 51 further includes a second conductive region 52c and a second other conductive region 52d that are continuous with the first conductive region 51c and the first other conductive region 51d. The position of the second intermediate region 42c in the second direction D2 is between the position of the second conductive region 52c in the second direction D2 and the position of the second other conductive region 52d in the second direction D2. A second gap g2 is provided between the second intermediate region 42c and the second element 12E in the first direction D1.

[0029] The control unit 70 may be configured to output a value corresponding to the difference between the second electrical resistance of the second resistive element 12 and the first electrical resistance of the first resistive element 11. The second element 12E may function as, for example, a reference element. As described above, when a first current is supplied to the first conductive element 21 of the first element 11E, the temperature of the first resistive element 11 changes. On the other hand, when no power is supplied to the second element 12E, the temperature of the second resistive element 12 does not substantially change. By detecting the difference between the first electrical resistance and the second electrical resistance, for example, a detection result in which the influence of the ambient temperature is suppressed can be obtained. For example, a compensated result can be obtained.

[0030] In the embodiment, the control unit 70 may be configured to output a value obtained by correcting the difference between the second electrical resistance of the second resistance member 12 and the first electrical resistance of the first resistance member 11 using the value detected by the first temperature detection element 58. This allows for even more accurate detection results to be obtained.

[0031] In the embodiment, the second conductive region 52c and the second other conductive region 52d are provided in the first conductive layer 51. This, for example, can improve the uniformity of heat and enable more stable detection.

[0032] In the embodiment, the second element 12E may include a second conductive member 22. No power may be supplied to the second conductive member 22. The second conductive member 22 is, for example, a dummy conductive member. By providing the second conductive member 22, for example, the thermal characteristics (for example, heat capacity) of the second element 12E become the same as the thermal characteristics (for example, heat capacity) of the first element 11E. Higher accuracy compensation can be obtained.

[0033] The first conductive layer 51 may further include a second fixing portion region 52a continuous with the second conductive region 52c. The position of the second fixing portion 12F in the third direction D3 is between the position of the second fixing portion region 52a in the third direction D3 and the position of the second intermediate region 42c in the third direction D3. The third direction D3 intersects with a plane including the first direction D1 and the second direction D2. The second fixing portion region 52a can improve heat uniformity.

[0034] The second detection unit 10B may further include a second other fixed portion 12G fixed to the second base region 42. The second element 12E is further supported by the second other fixed portion 12G. The first conductive layer 51 may further include a second other fixed portion region 52b continuous with the second conductive region 52c. The position of the second other fixed portion 12G in the third direction D3 is between the position of the second intermediate region 42c in the third direction D3 and the position of the second other fixed portion region 52b in the third direction D3. The second other fixed portion region 52b can improve heat uniformity.

[0035] As shown in FIG. 2(a), the first detection unit 10A may further include a first connection portion 11C. The first connection portion 11C is supported by a first fixing portion 11F. The first connection portion 11C supports the first element 11E. The width of the first connection portion 11C in the third direction D3 is smaller than the width of the first element 11E in the third direction D3. A portion of a first gap g1 is provided between the first base region 41 and the first connection portion 11C.

[0036] The first detection unit 10A may further include a first other connection unit 11D. The first other connection unit 11D is supported by the first other fixing unit 11G. The first other connection unit 11D supports the first element 11E. The width of the first other connection unit 11D in the third direction D3 is smaller than the width of the first element 11E in the third direction D3. A portion of a first gap g1 is provided between the first base region 41 and the first other connection unit 11D.

[0037] 1(a), for example, the first resistance wiring 11aL electrically connected to the first resistance portion 11a may pass through the first connection portion 11C and the first fixed portion 11F. For example, the first conductive wiring 21aL electrically connected to the first conductive portion 21a may pass through the first connection portion 11C and the first fixed portion 11F.

[0038] 1(a), for example, the first other resistance wiring 11bL electrically connected to the first other resistance portion 11b may pass through the first other connection portion 11D and the first other fixed portion 11G. For example, the first other conductive wiring 21bL electrically connected to the first other conductive portion 21b may pass through the first other connection portion 11D and the first other fixed portion 11G.

[0039] One of the first resistive wiring 11aL and the first other resistive wiring 11bL may be set to a first potential. One of the first conductive wiring 21aL and the first other conductive wiring 21bL may be set to a first potential.

[0040] As shown in FIG. 2(a), the second detection unit 10B may further include a second connection portion 12C. The second connection portion 12C is supported by a second fixing portion 12F. The second connection portion 12C supports the second element 12E. The width of the second connection portion 12C in the third direction D3 is smaller than the width of the second element 12E in the third direction D3. A portion of a second gap g2 is provided between the second base region 42 and the second connection portion 12C.

[0041] The second detection unit 10B may further include a second other connection portion 12D. The second other connection portion 12D is supported by the second other fixing portion 12G. The second other connection portion 12D supports the second element 12E. The width of the second other connection portion 12D in the third direction D3 is smaller than the width of the second element 12E in the third direction D3. A part of the second gap g2 is provided between the second base region 42 and the second other connection portion 12D.

[0042] 1(b), the second resistance member 12 includes a second resistance portion 12a and a second other resistance portion 12b, and the second conductive member 22 includes a second conductive portion 22a and a second other conductive portion 22b.

[0043] 1(b), for example, the second resistance wiring 12aL electrically connected to the second resistance portion 12a may pass through the second connection portion 12C and the second fixed portion 12F. For example, the second conductive wiring 22aL electrically connected to the second conductive portion 22a may pass through the second connection portion 12C and the second fixed portion 12F.

[0044] 1(b), for example, the second other resistance wiring 12bL electrically connected to the second other resistance portion 12b may pass through the second other connection portion 12D and the second other fixed portion 12G. For example, the second other conductive wiring 22bL electrically connected to the second other conductive portion 22b may pass through the second other connection portion 12D and the second other fixed portion 12G.

[0045] One of the second resistive wiring 12aL and the second other resistive wiring 12bL may be set to a first potential. One of the second conductive wiring 22aL and the second other conductive wiring 22bL may be set to a first potential. The control unit 70 does not need to supply an electrode to the second conductive member 22.

[0046] 1(a) and 1(b), the first element 11E may include a first insulating member 11i. The first insulating member 11i is provided around the first resistive member 11 and the first conductive member 21. The second element 12E may include a second insulating member 12i. The second insulating member 12i is provided around the second resistive member 12 and the second conductive member 22.

[0047] At least one of the first insulating member 11i and the second insulating member 12i may contain, for example, silicon nitride. As described below, at least one of the first insulating member 11i and the second insulating member 12i may contain, for example, metal oxide. The first insulating member 11i may be provided on the first connecting portion 11C and the first other connecting portion 11D. The second insulating member 12i may be provided on the second connecting portion 12C and the second other connecting portion 12D.

[0048] 4(a) to 4(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. As shown in FIGS. 4(a) to 4(c), in sensor 111 according to this embodiment, a portion of first conductive layer 51 overlaps with first fixed portion 11F in first direction D1. In this example, a portion of first conductive layer 51 overlaps with first other fixed portion 11G in first direction D1. A portion of first conductive layer 51 overlaps with second fixed portion 12F in first direction D1. In this example, a portion of first conductive layer 51 overlaps with second other fixed portion 12G in first direction D1. Except for this, the configuration of sensor 111 may be the same as the configuration of sensor 110. Sensor 111 can also provide a sensor capable of highly accurate detection.

[0049] A portion of the first conductive layer 51 may overlap with the first connection portion 11C in the first direction D1. A portion of the first conductive layer 51 may overlap with the first other connection portion 11D in the first direction D1. A portion of the first conductive layer 51 may overlap with the second connection portion 12C in the first direction D1. A portion of the first conductive layer 51 may overlap with the second other connection portion 12D in the first direction D1.

[0050] 5(a) to 5(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. 5(a) to 5(c), in the sensor 112 according to the embodiment, the first conductive layer 51 includes holes 51h, but the remaining configuration of the sensor 112 may be the same as that of the sensor 110 or the sensor 111. The holes 51h allow for appropriate control of thermal conductivity. The sensor 112 can also provide a sensor capable of highly accurate detection.

[0051] 6(a) to 6(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. As shown in FIGS. 6(a) to 6(c), in the sensor 113 according to this embodiment, the first conductive layer 51 includes a first conductive film 51f and a second conductive film 52f. At least a portion of the second conductive film 52f overlaps with the first conductive film 51f in the first direction D1. The second conductive film 52f is electrically connected to the first conductive film 51f. A portion of the base 40 may be provided between the first conductive film 51f and the second conductive film 52f. In this example, a portion of the second insulating layer 40j is provided between the first conductive film 51f and the second conductive film 52f. Except for these points, the configuration of the sensor 113 may be similar to that of the sensors 110 to 112. The first conductive film 51f and the second conductive film 52f provide low electrical resistance. High thermal uniformity is achieved.

[0052] 7(a) to 7(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. As shown in FIGS. 7(a) to 7(c), in a sensor 114 according to this embodiment, the control unit 70 includes a control element 45. The control element 45 may be, for example, a switching element such as a transistor. The control element 45 may overlap with at least one of the first element 11E and the first conductive layer 51 in the first direction D1. In this example, the control element 45 overlaps with the first element 11E in the first direction D1. The control element 45 may also overlap with the second element 12E in the first direction D1. A compact sensor can be easily obtained. Noise is suppressed. The remaining configuration of the sensor 114 may be similar to that of the sensors 110 to 113. In this example, the control element 45 includes a CMOS 46 (Complementary Metal Oxide Semiconductor).

[0053] 8(a) to 8(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. 8(a) and 8(c), in the sensor 115 according to this embodiment, at least a portion of the first temperature detection element 58 overlaps with the first element 11E in the first direction D1. The remaining configuration of the sensor 115 may be similar to the configurations of the sensors 110 to 114. The first temperature detection element 58 overlapping with the first element 11E allows the temperature of the first element 11E to be detected with higher accuracy.

[0054] 8(b), a second temperature detection element 59 may be provided in the sensor 115. At least a portion of the second temperature detection element 59 may overlap with the second element 12E in the first direction D1. The second temperature detection element 59 overlapping with the second element 12E allows the temperature of the second element 12E to be detected with higher accuracy. The control unit 70 may correct the detected value using the value detected by the second temperature detection element 59.

[0055] (Second embodiment) 9(a) to 9(c) are schematic cross-sectional views illustrating the sensor according to the first embodiment. Fig. 9(a) is a cross-sectional view corresponding to line A1-A2 in Fig. 2(a), Fig. 9(b) is a cross-sectional view corresponding to line A3-A4 in Fig. 2(a), and Fig. 9(c) is a cross-sectional view corresponding to line A5-A6 in Fig. 2(a). 9(a), in the sensor 120 according to the embodiment, the first detection unit 10A includes a first fixed electrode 51E. Except for this, the configuration of the sensor 120 may be similar to the configuration of the sensors 110-115.

[0056] In sensor 120, first fixed electrode 51E is fixed to first base region 41. A first gap g1 is provided between first fixed electrode 51E and first conductive member 21. In sensor 120, the distance between first fixed electrode 51E and first conductive member 21 changes depending on the state of the detection target present around first element 11E. The detection target can be detected by detecting a first capacitance between first fixed electrode 51E and first conductive member 21 that changes in distance.

[0057] In this example, the first insulating member 11i includes a first layer 61a in the first connecting portion 11C. The volume of the first layer 61a changes depending on the detection target (e.g., hydrogen) present around the first element 11E. The change in the volume of the first layer 61a applies stress to the first connecting portion 11C. The stress changes the distance between the first fixed electrode 51E and the first conductive member 21.

[0058] For example, the first insulating member 11i includes a first other layer 61b in the first other connection portion 11D. The volume of the first other layer 61b changes depending on the detection target present around the first element 11E. The change in the volume of the first other layer 61b applies stress to the first other connection portion 11D. The stress changes the distance between the first fixed electrode 51E and the first conductive member 21.

[0059] In sensor 120, second element 12E includes a second conductive member 22. In sensor 120, second detection unit 10B includes a second fixed electrode 52E. Second fixed electrode 52E is fixed to second base region 42. A second gap g2 is provided between second fixed electrode 52E and second conductive member 22. The distance between second fixed electrode 52E and second conductive member 22 changes depending on the state of the detection target present around second element 12E. The detection target can be detected by detecting a second capacitance between second fixed electrode 52E and second conductive member 22 that corresponds to the change in distance.

[0060] In this example, the second insulating member 12i includes a second layer 62a in the second connecting portion 12C. The volume of the second layer 62a changes depending on the detection target (e.g., hydrogen) present around the second element 12E. The change in the volume of the second layer 62a applies stress to the second connecting portion 12C. The stress changes the distance between the second fixed electrode 52E and the second conductive member 22.

[0061] For example, the second insulating member 12i includes a second other layer 62b in the second other connection portion 12D. The volume of the second other layer 62b changes depending on the detection target present around the second element 12E. The change in the volume of the second other layer 62b applies stress to the second other connection portion 12D. The stress changes the distance between the second fixed electrode 52E and the second conductive member 22.

[0062] At least one of the first layer 61a, the first other layer 61b, the second layer 62a, and the second other layer 62b contains, for example, a metal oxide. At least one of the first layer 61a, the first other layer 61b, the second layer 62a, and the second other layer 62b contains, for example, at least one metal selected from the group consisting of Pt, Pd, and Ti, and oxygen.

[0063] In the second embodiment, the first conductive member 21 and the second conductive member 22 function as, for example, fixed electrodes. In the second embodiment, the first resistive member 11 and the second resistive member 12 function as, for example, heaters.

[0064] In the first and second embodiments, the control unit 70 may include, for example, at least one of a gas detection circuit, a temperature detection circuit, a heater voltage generation circuit, and a control circuit. The gas detection circuit may include an electric resistance detection unit or an electrostatic capacitance detection unit.

[0065] In the embodiment, at least one of the first resistance member 11 and the second resistance member 12 may include at least one selected from the group consisting of, for example, TiN, Ti, W, Al, Cu, AlCu, Si, and Pd. At least one of the first conductive member 21 and the second conductive member 22 may include at least one selected from the group consisting of, for example, TiN, Ti, W, Al, Cu, AlCu, Si, and Pd.

[0066] The embodiments may include the following technical solutions. (Technical proposal 1) a substrate including a first substrate region including a first intermediate region; A first detection unit; a first conductive layer fixed to the substrate, the first conductive layer including a first conductive region and a first other conductive region; a first conductive layer terminal electrically connected to the first conductive layer; Equipped with The first detection unit a first fixed portion fixed to the first base region; a first element supported by the first fixed portion; Including, the first element includes a first resistive member and a first conductive member; a position of the first intermediate region in a second direction intersecting a first direction from the first base region to the first fixed portion is between a position of the first conductive region in the second direction and a position of the first other conductive region in the second direction; A sensor in which a first gap is provided between the first intermediate region and the first element in the first direction.

[0067] (Technical proposal 2) The sensor described in Technical Solution 1, wherein the first conductive area of ​​the first conductive area in a first plane intersecting the first direction is larger than the first element area of ​​the first element in the first plane.

[0068] (Technical proposal 3) the first resistance member includes a first resistance portion and a first other resistance portion; the first conductive member includes a first conductive portion and a first other conductive portion; a potential of the first resistor portion is set to a first potential of the first conductive layer terminal; The sensor according to technical proposal 1 or 2, wherein the potential of the first conductive part is fixed to the first potential.

[0069] (Technical proposal 4) a first power is supplied between the first conductive portion and the first other conductive portion; The sensor according to technical solution 3, wherein a first electrical resistance between the first resistive portion and the first other resistive portion is detected.

[0070] (Technical proposal 5) Further comprising a control unit, the control unit is configured to supply the first power; The sensor described in Technical Solution 4, wherein the control unit is configured to detect the first electrical resistance.

[0071] (Technical proposal 6) The sensor described in Technical Solution 5, wherein the first electrical resistance changes depending on the detection target present in the space around the first element.

[0072] (Technical proposal 7) Further comprising a first temperature detection element; The sensor described in Technical Solution 6, wherein the control unit is configured to output a value obtained by correcting the first electrical resistance based on the value detected by the first temperature detection element.

[0073] (Technical proposal 8) the first conductive layer further includes a first temperature detection region contiguous with the first conductive region; The sensor described in Technical Solution 7, wherein the first temperature detection area overlaps with the first temperature detection element in the first direction.

[0074] (Technical proposal 9) The sensor according to any one of Technical Schemes 1 to 8, wherein a portion of the first conductive layer overlaps with the first fixed portion in the first direction.

[0075] (Technical proposal 10) the first conductive layer further includes a first fixing portion region continuous with the first conductive region; a position of the first fixed portion in the third direction is between a position of the first fixed portion region in the third direction and a position of the first intermediate region in the third direction; The sensor according to any one of Technical Solutions 1 to 9, wherein the third direction intersects with a plane including the first direction and the second direction.

[0076] (Technical proposal 11) the first detection unit further includes a first other fixing unit fixed to the first base region, the first element is further supported by the first other fixing portion, the first conductive layer further includes a first other fixed portion region continuous with the first conductive region, The sensor described in Technical Solution 10, wherein the position of the first other fixed portion in the third direction is between the position of the first intermediate region in the third direction and the position of the first other fixed portion region in the third direction.

[0077] (Technical proposal 12) Further comprising a second detection unit, the substrate further comprises a second substrate region comprising a second intermediate region; The second detection unit a second fixing portion fixed to the second base region; a second element supported by the second fixed portion; Including, the second element includes a second resistive member; the first conductive layer further includes a second conductive region and a second other conductive region that are continuous with the first conductive region and the first other conductive region, a position of the second intermediate region in the second direction is between a position of the second conductive region in the second direction and a position of the second other conductive region in the second direction; The sensor described in Technical Solution 7 or 8, wherein a second gap is provided between the second intermediate region and the second element in the first direction, and the sensor overlaps with the second element.

[0078] (Technical proposal 13) The sensor described in Technical Proposal 12, wherein the control unit is configured to output a value obtained by correcting the difference between the second electrical resistance of the second resistance member and the first electrical resistance using the value detected by the first temperature detection element.

[0079] (Technical proposal 14) the first conductive layer further includes a second fixing portion region continuous with the second conductive region; a position of the second fixed portion in the third direction is between a position of the second fixed portion region in the third direction and a position of the second intermediate region in the third direction; The sensor according to technical proposal 12 or 13, wherein the third direction intersects with a plane including the first direction and the second direction.

[0080] (Technical proposal 15) the second detection unit further includes a second other fixing unit fixed to the second base region, the second element is further supported by the second other fixing portion, the first conductive layer further includes a second other fixing portion region that is continuous with the second conductive region, The sensor described in Technical Proposal 14, wherein the position of the second other fixed portion in the third direction is between the position of the second intermediate region in the third direction and the position of the second other fixed portion region in the third direction.

[0081] (Technical proposal 16) the control unit includes a control element; The sensor according to any one of Technical Solutions 12 to 15, wherein the control element overlaps with at least one of the first element and the first conductive layer in the first direction.

[0082] (Technical proposal 17) The sensor according to Technical Proposal 16, wherein the control element includes a CMOS (Complementary Metal Oxide Semiconductor).

[0083] (Technical proposal 18) The sensor according to any one of Technical Schemes 12 to 17, wherein the second element further includes a second conductive member.

[0084] (Technical proposal 19) the first conductive layer includes a first conductive film and a second conductive film; At least a portion of the second conductive film overlaps with the first conductive film in the first direction; the second conductive film is electrically connected to the first conductive film, The sensor according to any one of Technical Schemes 1 to 18, wherein a portion of the substrate is provided between the first conductive film and the second conductive film.

[0085] (Technical proposal 20) 20. The sensor according to any one of Technical Schemes 1 to 19, wherein the first conductive layer includes holes.

[0086] According to the embodiment, a sensor capable of highly accurate detection can be provided.

[0087] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of each element included in the sensor, such as the base, detection unit, resistance member, conductive member, temperature detection element, and control unit, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0088] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0089] In addition, all sensors that can be implemented by a person skilled in the art by appropriately modifying the design based on the sensor described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0090] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0091] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0092] 10A, 10B: first and second detection portions, 11, 12: first and second resistance members, 11C, 12C: first and second connection portions, 11D, 12D: first and second other connection portions, 11E, 12E: first and second elements, 11F, 12F: first and second fixed portions, 11G, 12G: first and second other fixed portions, 11a, 12a: first and second resistance portions, 11aL, 12aL: first and second resistance wirings, 11b, 12b: first and second other resistance portions, 11bL, 12bL: first and second other resistance wirings, 11i, 12i: first and second insulating members, 21, 22: first and second conductive members, 21a, 22a: first and second conductive portions, 21aL, 22bL: first and second conductive wiring, 21b, 22b: first and second other conductive parts, 21bL, 22bL: first and second other conductive wiring, 40: base body, 40i: first insulating layer, 40j: second insulating layer, 40s: substrate, 41, 42: first and second base region, 41c, 42c: first and second intermediate regions, 45: control element, 46: CMOS, 51: first conductive layer, 51E, 52E: first and second fixed electrodes, 51T: first conductive layer terminal, 51a, 52a: first and second fixed part regions, 51b, 52b: first and second other fixed part regions, 51c, 52c: first and second conductive regions, 51d, 52d: first and second other conductive regions; 51f, 52f: first and second conductive films; 51h: hole; 51x: first temperature detection region; 58, 59: first and second temperature detection elements; 61a, 62a: first and second layers; 61b, 62a: first and second other layers; 70: control unit; 110-115, 120: sensors; D1-D3: first to third directions; g1, g2: first and second gaps

Claims

1. a substrate including a first substrate region including a first intermediate region; A first detection unit; a first conductive layer fixed to the substrate, the first conductive layer including a first conductive region and a first other conductive region; a first conductive layer terminal electrically connected to the first conductive layer; Equipped with The first detection unit a first fixing portion fixed to the first base region; a first element supported by the first fixed portion; Including, the first element includes a first resistive member and a first conductive member; a position of the first intermediate region in a second direction intersecting a first direction from the first base region to the first fixed portion is between a position of the first conductive region in the second direction and a position of the first other conductive region in the second direction; A sensor having a first gap provided between the first intermediate region and the first element in the first direction.

2. the first resistance member includes a first resistance portion and a first other resistance portion; the first conductive member includes a first conductive portion and a first other conductive portion; a potential of the first resistor portion is set to a first potential of the first conductive layer terminal; The sensor of claim 1 , wherein the potential of the first conductive portion is fixed at the first potential.

3. a first power is supplied between the first conductive portion and the first other conductive portion; The sensor of claim 2 , wherein a first electrical resistance between the first resistive portion and the first other resistive portion is detected.

4. Further comprising a control unit, the control unit is configured to supply the first power; The sensor of claim 3 , wherein the controller is configured to detect the first electrical resistance.

5. The sensor according to claim 4 , wherein the first electrical resistance changes depending on a detection target present in a space around the first element.

6. Further comprising a first temperature detection element; The sensor according to claim 5 , wherein the control unit is configured to output a value obtained by correcting the first electrical resistance based on a value detected by the first temperature detection element.

7. the first conductive layer further includes a first temperature detection region contiguous with the first conductive region; The sensor of claim 6 , wherein the first temperature detection region overlaps with the first temperature detection element in the first direction.

8. 8. The sensor according to claim 1, wherein a portion of the first conductive layer overlaps with the first fixed portion in the first direction.

9. the first conductive layer further includes a first fixing portion region continuous with the first conductive region; a position of the first fixed portion in the third direction is between a position of the first fixed portion region in the third direction and a position of the first intermediate region in the third direction; The sensor of claim 1 , wherein the third direction intersects with a plane containing the first direction and the second direction.

10. Further comprising a second detection unit, the substrate further comprises a second substrate region comprising a second intermediate region; The second detection unit a second fixing portion fixed to the second base region; a second element supported by the second fixed portion; Including, the second element includes a second resistive member, the first conductive layer further includes a second conductive region and a second other conductive region that are continuous with the first conductive region and the first other conductive region, a position of the second intermediate region in the second direction is between a position of the second conductive region in the second direction and a position of the second other conductive region in the second direction; The sensor of claim 6 , wherein the sensor overlaps the second element in the first direction, with a second gap between the second intermediate region and the second element.

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