Determination method of exposure treatment, exposure apparatus, exposure method, production method of article, and program

Abstract

To provide a determination method having high productivity in exposure treatment of a substrate having a large flatness.SOLUTION: A determination method of exposure treatment of exposing a substrate by projecting an image of a pattern of an original plate on the substrate includes: a flatness-acquiring step of acquiring a flatness in an exposure region of the substrate; an evaluation value-deriving step of deriving an evaluation value on the basis of the flatness; and a determination step of determining whether to perform a multiple focus exposure of performing a plurality of times of exposure treatment at a plurality of focus positions to the exposure region of the substrate on the basis of the evaluation value.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a method for determining an exposure process, an exposure apparatus, an exposure method, a method for manufacturing an article, and a program. [Background technology]

[0002] As the variety of products manufactured using exposure tools increases, exposure tools must be able to handle a variety of substrates and processes. One example is exposure processing of SiC substrates, where large-diameter substrates are used to improve productivity. However, as the substrate diameter increases, the problem of in-plane flatness (the maximum difference in the height direction of the substrate) also increases.

[0003] Patent Document 1 discloses a technique in which, when a substrate with a high degree of flatness is exposed by an exposure apparatus, exposure is performed according to a focus offset for each shot area determined based on the degree of flatness. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-114526 Summary of the Invention [Problem to be solved by the invention]

[0005] The technology of Patent Document 1 determines the focal position for each exposure region of a substrate according to the flatness, and if the flatness is greater than the depth of focus, distortion occurs in the shape of the transferred pattern. A multi-focus exposure (FLEX: Focus Latitude Enhancement Exposure) method is known as a method for exposing a substrate with flatness exceeding the depth of focus. The FLEX method is an exposure method that performs multiple exposures at multiple different focal positions, and by applying it to an exposure region with flatness greater than the depth of focus, distortion of the shape of the transferred pattern can be prevented.

[0006] However, multi-focal exposure involves driving the focal position multiple times, which increases the exposure processing time and inevitably reduces productivity. An object of the present invention is to provide a method for determining an exposure process with high productivity in the exposure process of a substrate having a high degree of flatness. [Means for solving the problem]

[0007] The exposure processing determination method of the present invention is a method for determining an exposure processing in which an image of an original pattern is projected onto a substrate to expose the substrate, and is characterized by having a flatness acquisition step for acquiring flatness within an exposure area of ​​the substrate, an evaluation value derivation step for deriving an evaluation value based on the flatness, and a determination step for determining, based on the evaluation value, whether to perform multi-focus exposure in which multiple exposure processes are performed at multiple focus positions on the exposure area of ​​the substrate. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a method for determining an exposure process with high productivity in the exposure process of a substrate with a high degree of flatness. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a diagram showing an exposure apparatus according to an embodiment of the present invention. [Figure 2] FIG. 1 is a diagram illustrating a flatness measuring device according to an embodiment. [Figure 3] 10 is a flowchart for determining exposure processing according to an embodiment. [Figure 4] 10 is a flowchart for determining exposure processing according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. In the drawings, the same components are designated by the same reference numerals, and redundant explanations will be omitted.

[0011] In the following description, the direction perpendicular to the substrate placement surface on which the substrate W is placed on the substrate stage 115 (the direction parallel to the optical axis of the projection optical system 111) is defined as the Z direction. In a plane perpendicular to the Z direction, directions perpendicular to each other are defined as the X direction and the Y direction. In addition, the drawings shown below may be drawn at a scale different from the actual scale in order to facilitate understanding of this embodiment.

[0012] <Embodiment> 1 shows a schematic configuration diagram of an exposure apparatus 100 according to an embodiment of the present invention. The exposure apparatus 100 is a lithography apparatus for forming a pattern on a substrate W.

[0013] The exposure apparatus 100 according to this embodiment includes a light source 101 , a control unit C, an illumination optical system 104 , an original stage 109 , a projection optical system 111 , and a substrate stage 115 .

[0014] In the exposure apparatus 100 according to this embodiment, light from a light source 101 is used to project and expose an image of a pattern on an original G onto a photoresist surface on a substrate W. The original G is movably held on an original stage 109, and is disposed between an illumination optical system 104 and a projection optical system 111, specifically near the position of the object plane of the projection optical system 111. The substrate W is movably held on a substrate stage 115, and is disposed at the position of the image plane of the projection optical system 111.

[0015] The control unit C includes a light source control unit 102, a main control unit 103, an illumination system control unit 108, a master stage control unit 121, a projection system control unit 122, and a substrate stage control unit 123, and controls the entire exposure apparatus 100. The main control unit 103 has storage devices such as a CPU and memory (not shown), and controls each unit of the exposure apparatus 100. Specifically, it controls the process of projecting an image of the pattern on the master G onto the substrate W, i.e., the process of scanning and exposing the substrate W.

[0016] The exposure apparatus 100 exposes the substrate W by projecting an image of a pattern formed on the original G onto each of a plurality of shot areas on the substrate W. The exposure light emitted from the light source 101 is shaped into a predetermined shape by a shaping optical system (not shown) of the illumination optical system 104. The shaped exposure light is further incident on an optical integrator (not shown), which forms a number of secondary light sources for illuminating the original G with a uniform illuminance distribution.

[0017] A field stop 105 that defines the illumination area on the original G is provided on the optical path of the illumination optical system 104, and the position and size of the opening of the field stop 105 are controlled by an illumination system control unit 108. The field stop 105 is also called a masking blade. For example, the masking blade limits the illumination area to a rectangular shape, and its four sides are configured to be independently movable. This allows any area on the original G to be illuminated.

[0018] A half mirror 106 is disposed on the optical path of the exposure light emitted by the illumination optical system 104, and a portion of the exposure light illuminating the original G is reflected and extracted by the half mirror 106. A photosensor 107 is disposed on the optical path of the light reflected by the half mirror 106, and the photosensor 107 generates an output corresponding to the intensity of the exposure light (amount of exposure energy).

[0019] The output of the photosensor 107 is converted into the amount of exposure energy per pulse by an integration circuit (not shown) that performs integration for each pulse of light emitted from the light source 101, and is provided to the main control unit 103 via the illumination system control unit . The original G has a pattern formed thereon that corresponds to the circuit pattern of the semiconductor device to be manufactured, and is illuminated by exposure light emitted from an illumination optical system 104 .

[0020] The projection optical system 111 reduces and projects a part of the pattern area of ​​the original G at a predetermined reduction ratio β (for example, 1 / 4) onto the substrate W coated with photoresist. In this state, the original stage 109 and the substrate stage 115 are scanned in opposite directions (Y: scanning direction) relative to the exposure light at a speed ratio equal to the reduction ratio β of the projection optical system 111. Furthermore, as a result of the light source 101 repeatedly emitting pulsed light, the entire pattern area of ​​the original G is transferred onto a shot area on the substrate W (a shot area includes one or more chip areas).

[0021] The original stage 109 is configured to hold the original G. The original stage 109 is also provided with a movable mirror, and the position or displacement of the movable mirror is measured by a laser interferometer 110. This allows the positions of the original stage 109 in the X and Y directions to be detected.

[0022] The original stage control unit 121 controlled by the main control unit 103 controls the position of the original stage 109 by controlling a drive mechanism (not shown) based on the position of the original stage 109 detected using a laser interferometer 110.

[0023] The projection optical system 111 has a movable optical element 111a. The movable optical element 111a is held by the lens barrel of the projection optical system 111, and is driven in the optical axis direction of the projection optical system 111 by a drive mechanism 113. A projection system control unit 122 controlled by the main control unit 103 arranges an aperture stop 112 on the pupil plane of the projection optical system 111. The diameter of the opening of the aperture stop 112 can be controlled by a drive mechanism 114.

[0024] By adjusting the position of the movable optical element 111a in the optical axis direction of the projection optical system 111, the reduction ratio β and / or distortion of the projection optical system 111 can be adjusted. The driving mechanism 114 is configured to drive the movable optical element 111a by, for example, air pressure or a piezoelectric element.

[0025] The substrate stage 115 is configured to hold the substrate W, and can move in the optical axis direction (Z direction) of the projection optical system 111 and in a plane perpendicular to the optical axis direction (XY plane) by being driven by the drive mechanism 120. Furthermore, the substrate stage 115 can also be driven in a rotational direction around the Z axis, X axis, and Y axis.

[0026] Furthermore, the substrate stage 115 is provided with a movable mirror 118, and the position or displacement of the movable mirror 118 is measured by a laser interferometer 119. In this way, the positions of the substrate stage 115 in the X and Y directions are detected. The substrate stage control unit 123, which is controlled by the main control unit 103, controls the position of the substrate stage 115 in the XY plane by controlling the drive mechanism 120 based on the position of the substrate stage 115 detected using a laser interferometer 119.

[0027] The exposure apparatus 100 has a projection system that projects detection light onto a mark on the substrate W, and a light-receiving system that receives reflected light from the mark, and has an alignment measurement unit 117 that measures the position of the mark in the X and Y directions (alignment position). The alignment measurement unit 117 shown in Fig. 1 is configured as an off-axis detection system that detects the mark on the substrate W without going through the projection optical system 111, but is not limited to this.

[0028] For example, the alignment measurement unit 117 may be configured as a TTL (Through The Lens) detection system that detects marks on the substrate W via the projection optical system 111. The alignment measurement unit 117 can determine the relative position between the original stage 109 and the substrate stage 115.

[0029] The exposure apparatus 100 further includes a focus measurement unit. The focus measurement unit is a focal plane detection device that has a projection system 116a that projects detection light toward the surface of the substrate W and a light receiving system 116b that receives the reflected light, and measures the position of the substrate W in the Z axis direction (surface position, surface height).

[0030] The projection system 116a in the focus measurement unit of this embodiment can be configured to make detection light obliquely incident on the surface of the substrate W, and the light-receiving system 116b can be configured to receive detection light (reflected light) reflected by the surface of the substrate W. The projection system 116a and the light-receiving system 116b are each provided obliquely above and facing a mark whose position is measured by the alignment measurement unit 117.

[0031] In exposure apparatus 100 of the present embodiment, the surface position of a shot area is measured by a focus measurement unit, and height distribution information on the surface of the substrate W can be obtained based on the measurement values. This height distribution information can then be used in common for all shot areas to control the height of the substrate W when each shot area is exposed. For example, the height distribution information is referenced to calculate an offset value for the height of the substrate W that is corrected when each shot area is exposed, depending on the detection error of light receiving system 116b and the uneven shape of the pattern formed in each shot area.

[0032] As an example, a representative offset value for correcting the height of the substrate W can be obtained from the obtained height distribution information, and the representative offset value can be used in common for all shot areas to control the height of the substrate W during exposure of each shot area. The exposure apparatus 100 can determine the exposure process, which will be described later, based on the obtained data on the position (height) in the Z direction relative to the positions in the X and Y directions on the substrate.

[0033] The substrate stage control unit 123 issues a command to move the substrate stage 115 to a desired position in the X and Y directions specified by the main control unit 103, and the substrate stage control mechanism 129 adjusts the substrate stage 115. In addition, the substrate stage control mechanism 129 adjusts the substrate stage 115 to a position in the Z direction specified by the main control unit 103, so that the substrate W can be exposed multiple times at different focal positions.

[0034] 2 shows a measurement device (measurement apparatus) 140 that collects flatness data of the substrate W in this embodiment. The measurement device 140 may be provided as an apparatus external to the exposure apparatus 100, or may be provided within the exposure apparatus 100. The substrate W is held by a substrate holder 130 that is fixed to a substrate stage 115 that is movable in the X and Y directions.

[0035] The main control unit 103 controls the substrate stage control unit 123 to move the substrate stage 115 to a plurality of preset coordinate positions using the drive mechanism 120, and measures the Z-direction position (height) of the surface of the substrate W at each of the plurality of coordinate positions using the measurement device 140. The acquired measurement values ​​of the Z-direction position at each coordinate position (XY position) in the XY plane of the substrate W are stored in the control unit C as flatness data.

[0036] The acquired flatness data is divided into exposure areas according to the coordinate positions of the exposure areas on the substrate W, and exposure area flatness data for each exposure area is obtained.

[0037] The method for determining the exposure process in this embodiment will be described below with reference to the flowchart shown in Fig. 3. Each step of the flowchart is performed by, but is not limited to, the controller C. Each step of the flowchart may be performed by, for example, the main controller 103, or an information processing device external to the exposure apparatus 100.

[0038] In step S1, flatness data is acquired at a plurality of predetermined positions in the XY plane for all shot areas on the substrate W (flatness acquisition step), and the process proceeds to step S2. In step S2, a plurality of evaluation values ​​are calculated based on the acquired flatness data. In this embodiment, a first evaluation value R and a second evaluation value P are derived (evaluation value derivation step).

[0039] The first evaluation value R is an evaluation value calculated based on the difference (absolute value) between the maximum value (highest coordinate value in the Z direction) and the minimum value (lowest coordinate value in the Z direction) of the flatness data in each acquired shot area. That is, the maximum value of the flatness data in the shot area is S max , the minimum value is S min , and the depth of focus determined based on the exposure conditions is D, the first evaluation value R is calculated by the following formula (1). R=(S max -S min ) / D ··· (1) That is, the first evaluation value R is a value indicating how many times the range of the focal depth of the optical system corresponds to the maximum height difference in the height distribution of the substrate surface within the shot area.

[0040] The second evaluation value P is an evaluation value based on the value obtained from the flatness data within each divided region by dividing the shot region into multiple regions. The shot region is divided into four quadrants from the center, and the average flatness data for each quadrant is calculated for the multiple flatness data in the center (nearby) of each quadrant obtained in step S1. The difference between the maximum and minimum values ​​of the four average values ​​obtained is then obtained as the difference between the four quadrants.

[0041] Next, a second evaluation value P is calculated based on the obtained difference between the four quadrants and the focal depth of the optical system. J pieces of flatness data in the center of the ith quadrant (i: 1 to 4) of the shot area of ​​interest are calculated as S ij (j: 1 to J), the average value S of the flatness data in the center of the i-th quadrant in the shot area i is expressed by the following equation (2).

[0042]

number

[0043] The first evaluation value R is evaluated as the ratio of the maximum height difference in the height distribution of the substrate surface within a shot area of ​​interest to the depth of focus, while the second evaluation value P is evaluated as the ratio of the maximum height difference of the substrate surface between four divided areas of the shot area to the depth of focus.

[0044] Here, in this embodiment, an example has been shown in which two evaluation values ​​are used, but the present invention is not limited to the first evaluation value R and the second evaluation value P. A plurality of flatness data within the exposure area may be used, for example, flatness data at a specific position other than the center of the exposure area, as the evaluation value. Regarding the method of calculating the evaluation value, it is sufficient to determine the relative relationship between the target flatness data and the depth of focus.

[0045] In this embodiment, the number of focus positions is used as a condition for performing multi-focal exposure, and therefore the tolerance is determined as a multiple of the depth of focus.

[0046] In step S3 (decision step), based on the obtained first evaluation value R and second evaluation value P and the judgment table shown in Table 1, the exposure process for the exposure area (shot area) is decided. [Table 1]

[0047] The exposure process is determined from normal exposure, which exposes the entire shot area in one go; multi-focal exposure, which exposes the entire shot area multiple times by moving the focus to multiple positions in the Z direction; and divided exposure, which divides the shot area and exposes each divided area.

[0048] In step S4, it is determined whether or not the exposure process has been determined for all shot areas on the substrate W. If the exposure process has not been determined for all shot areas on the substrate W, the process returns to step S2; if the exposure process has been determined, the process proceeds to step S5.

[0049] In step S5, exposure processing of each shot area on the substrate W is performed using the exposure processing determined for that shot area. In this embodiment, the exposure processing is executed after the exposure processing for all shot areas on the substrate W is determined, but the present invention is not limited to this. Each time the exposure processing for one shot area is determined, the execution of the determined exposure processing for that shot area may be started.

[0050] Furthermore, if the determination result for all shot areas on substrate W in step S3 is divided exposure, the exposure process may be redetermined by repeating the process from step S1 for each of the divided exposure areas.

[0051] Based on the judgment table shown in Table 1, it is possible to determine which method of exposure processing for a shot area, which is an exposure area, among normal exposure, multi-focus exposure, and divided exposure, is used based on the first evaluation value R and the second evaluation value P of the shot area. The determination of the exposure process in step S3 of the flowchart in FIG. 3 will be described with reference to the flowchart shown in FIG.

[0052] In step S31, it is determined whether the first evaluation value R is equal to or less than 1. If it is equal to or less than 1, the process proceeds to step S35, where normal exposure is determined as the exposure process. If it is greater than 1, the process proceeds to step S32.

[0053] If the first evaluation value R is 1 or less, there are no two positions on the substrate W where the difference in surface height (difference in position in the Z direction) exceeds 1, and therefore the second evaluation value P is also 1 or less. In this case, once an appropriate focus position is set, exposure processing can be performed in a focused state for all positions (exposure positions) in the shot area.

[0054] In step S32, it is determined whether the first evaluation value R is greater than 1 and equal to or less than 2. If it is, the process proceeds to step S36, where multifocal exposure is determined as the exposure process. If it is not, the process proceeds to step S33.

[0055] If the first evaluation value R is greater than 1 and equal to or less than 2, there are no two positions in the shot area where the difference in surface height (difference in position in the Z direction) exceeds twice the depth of focus. Therefore, by performing two multi-focal exposures with appropriately set focal positions on that shot area, it is possible to subject all parts of that shot area to exposure processing within the depth of focus.

[0056] In step S33, it is determined whether the first evaluation value R is greater than 2 and equal to or less than 3, and if it is, the process proceeds to step S34, and if it is not, the process proceeds to step S37. If the first evaluation value R is greater than 2 and equal to or less than 3, there are two positions within the shot area where the maximum value of the height difference (difference in position in the Z direction) on the surface is more than twice the depth of focus and equal to or less than three times.

[0057] In step S34, it is determined whether the second evaluation value P is 1 or less, and if it is, the process proceeds to step S36, and if it is not, the process proceeds to step S37. In step S34, if the second evaluation value P is 1 or less, the first evaluation value R is greater than 2 and less than or equal to 3, so it can be determined that the variation in flatness between quadrants is small compared to the variation in flatness of the entire shot area.

[0058] Therefore, it is possible to determine that all four quadrants can be exposed under the same focus conditions, and perform exposure processing on the shot area by performing two multi-focal exposures with the focus position shifted, so that most of the shot area is within the depth of focus. Alternatively, it is also possible to perform exposure processing on all of the shot area by performing three multi-focal exposures with the focus position shifted, so that the entire shot area is within the depth of focus.

[0059] In step S37, a divided exposure process in which exposure is performed for each quadrant is determined as the exposure process. In the divided exposure process, one exposure process is performed for each divided area (each quadrant). Alternatively, each divided exposure area (each quadrant) may be treated as a shot area to be subjected to the process of step S1 shown in FIG. 3, and the process may be performed from step S1, and the exposure process may be determined again.

[0060] If it is determined in step S3 of Figure 3 that multi-focal exposure is to be performed, the number of multi-focal exposures (the number of focus positions to be exposed) and the focus position in each multi-focal exposure process are determined based on the flatness data of the exposure area.

[0061] Specifically, the number of times of multi-focal exposure, that is, the number of focal positions to be exposed, is determined based on the first evaluation value R based on the flatness data acquired in step S2.

[0062] If the first evaluation value R is greater than 1 and equal to or less than 2, two multi-focal exposures should be performed. The first focus position should be the minimum value of the flatness data (the surface position of the substrate W farthest from the original G), and the second focus position should be a position displaced from the first focus position toward the original G by the focal depth. Note that the first focus position does not have to be the position of the minimum value of the flatness data, but may be a position closer to the original G than that position and within the focal depth.

[0063] If the first evaluation value R is greater than 2 and equal to or less than 3, performing three multi-focal exposures will allow exposure under the condition that all positions within the exposure area are within the depth of focus at least once. The first focus position of the multi-focal exposure is the position corresponding to the median between the maximum and minimum values ​​of the flatness data.

[0064] The second and third focus positions of the multi-focal exposure are positions shifted higher and lower from the first focus position by the focal depth, respectively. By performing multi-focal exposure at three focus positions in this way, all positions in the exposure area can be exposed within at least one focal depth.

[0065] When the first evaluation value R is greater than 2 and equal to or less than 3, it may be selected to perform two multi-focal exposures. In particular, when the first evaluation value R is greater than 2 and equal to or less than 3 but close to 2, it may be selected to perform two multi-focal exposures. This makes it possible to perform exposure processing in which most of the exposure region is within the depth of focus while maintaining high throughput.

[0066] It is also possible to determine the focus position for multi-focal exposure without using the first evaluation value R and the second evaluation value P. The average value of all flatness data in the exposure area may be set as the first focus position for multi-focal exposure, and the maximum and minimum values ​​of all flatness data may be set as the second and third focus positions for multi-focal exposure.

[0067] Next, an example of a method for dividing the exposure area (shot area) into a plurality of areas when it is determined in step S3 of FIG. 3 that divided exposure is to be performed by dividing the exposure area will be described. The exposure area is divided into a preset number of divisions based on the design of the circuit pattern to be transferred formed on the master G. In this embodiment, the number of divisions is set to four, which is divided into quadrants, but it is also possible to divide an area formed by integrating multiple adjacent areas based on the design of the circuit pattern to be transferred.

[0068] Furthermore, the focus position of each divided region determined to be exposed by divided exposure may be determined based on the flatness data or an evaluation value based thereon. For example, the flatness value in each region (quadrant) used to calculate the second evaluation value P in step S2 may be determined as the focus position (exposure processing condition) of the divided region.

[0069] The flatness data of the substrate W used to calculate the first evaluation value R and the second evaluation value P can be acquired by the measuring device 140 in Fig. 2. Furthermore, as described above, the focus measurement units (116a, 116b) of the exposure apparatus 100 can also acquire flatness data as height distribution information of the surface of the substrate W. The acquired flatness data of the substrate W can be further utilized as follows.

[0070] When the exposure apparatus 100 collects flatness data for the substrate W, the surface of the substrate W is coated with a resist, which is a photosensitive material, and therefore the collected flatness data includes the thickness of the photosensitive material within the substrate W. By acquiring flatness data for the substrate W before the photosensitive material is coated in advance using the measuring device 140, data relating to the thickness of the coated photosensitive material can be obtained by comparing this data with the flatness data measured by the exposure apparatus 100 after the photosensitive material has been coated. The first evaluation value R and / or the second evaluation value P in step S2 may be calculated and used taking into account the obtained data relating to the thickness of the photosensitive material.

[0071] (Article manufacturing method) The method for manufacturing a semiconductor device as an article according to this embodiment, using the exposure apparatus described above, includes a pre-process of forming an integrated circuit chip on a substrate W, and a post-process of completing the integrated circuit chip on the substrate W formed by the pre-process as a product.

[0072] The article may be, but is not limited to, a semiconductor IC element, a liquid crystal display element, or a MEMS. The article is manufactured by exposing a substrate W coated with a photosensitive agent using the exposure apparatus described above, developing the substrate W, and then processing the developed substrate W through other well-known processes. These other well-known processes include etching, resist stripping, dicing, bonding, packaging, and the like. The article manufacturing method according to this embodiment allows articles to be manufactured with higher productivity than conventional methods.

[0073] (program) The present invention can also be realized by supplying a program that realizes one or more functions of the above-described embodiments to a system or device via a network or a storage medium, and having one or more processors in the computer of the system or device read and execute the program.The present invention can also be realized by a circuit (e.g., ASIC) that realizes one or more functions.

[0074] Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments and various modifications and changes are possible within the scope of the gist of the present invention.

[0075] The disclosure of this embodiment includes the following methods, configurations, and programs. (Method 1) 1. A method for determining an exposure process for exposing a substrate by projecting an image of a pattern of an original onto the substrate, comprising: a flatness acquisition step of acquiring flatness within an exposure area of ​​the substrate; an evaluation value derivation step of deriving an evaluation value based on the flatness; A method for determining an exposure processing method, characterized by having a decision step of determining whether to perform multi-focus exposure, which involves multiple exposure processes at multiple focus positions, on the exposure area of ​​the substrate based on the evaluation value. (Method 2) The method according to Method 1, characterized in that the evaluation value derivation step includes a step of deriving the evaluation value based on data relating to the depth of focus of a projection optical system included in an exposure apparatus that performs the exposure process and the flatness. (Method 3) The method according to method 2, characterized in that the data regarding flatness is the maximum and minimum values ​​of the flatness within the shot area. (Method 4) The method according to Method 2, wherein the data regarding the flatness includes maximum and minimum values ​​of the flatness in a plurality of regions obtained by dividing the shot region. (Method 5) The method according to Method 4, wherein the data regarding the flatness includes the maximum and minimum values ​​of the flatness at the center of each of the multiple regions into which the shot region is divided. (Method 6) The method described in Method 2, characterized in that the evaluation values ​​include a first evaluation value based on the depth of focus and the maximum and minimum values ​​of the flatness within the shot area, and a second evaluation value based on the depth of focus and the maximum and minimum values ​​of the flatness of multiple areas into which the shot area is divided. (Method 7) 7. A method according to any one of methods 1 to 6, wherein the exposure conditions for the multi-focal exposure are set based on at least one of the flatness and the evaluation value. (Method 8) 8. The method according to Method 7, wherein the exposure conditions include the number of different focus positions in the multi-focal exposure. (Method 9) 9. The method according to method 7 or 8, wherein the exposure conditions include a plurality of focus positions that are different from each other in the multi-focal exposure. (Method 10) A method according to any one of methods 1 to 9, characterized in that the determination step includes a step of determining, based on the evaluation value, whether to perform exposure processing for the exposure area of ​​the substrate in a single exposure, multi-focus exposure, or divided exposure in which the exposure area is divided into multiple areas and exposed. (Method 11) 11. The method according to claim 10, wherein when the divided exposure is determined, the division of the exposure area is performed based on a pattern formed on the original. (Method 12) A method according to method 10 or 11, characterized in that when the divided exposure is determined, the exposure processing conditions for each divided area into which the exposure area is divided are set based on at least one of the flatness or the evaluation value. (Method 13) 13. The method according to any one of methods 1 to 12, wherein the flatness is obtained by a measurement unit included in the exposure apparatus. (Method 14) 14. A method according to any one of methods 1 to 13, wherein the flatness is obtained by a measurement device that is an external device to the exposure apparatus. (Configuration 1) An exposure apparatus that exposes a substrate by projecting an image of a pattern of an original onto the substrate, characterized in that the exposure apparatus exposes the substrate using an exposure process determined based on the determination method described in any one of methods 1 to 14. (Method 15) An exposure method for exposing a substrate by projecting an image of a pattern of an original onto the substrate, characterized in that the substrate is exposed using an exposure process determined based on the determination method described in any one of methods 1 to 14. (Method 16) exposing a substrate to an exposure treatment determined based on the determination method according to any one of methods 1 to 14; developing the exposed substrate; and producing an article from the developed substrate. (Program 1) 15. A program that, when executed by a processor, causes the processor to perform the method for determining an exposure process according to any one of methods 1 to 14. [Explanation of symbols]

[0076] 100 Exposure device 116a, 116b focus measurement unit C control section R original version W substrate

Claims

1. 1. A method for determining an exposure process for exposing a substrate by projecting an image of a pattern of an original onto the substrate, comprising: a flatness acquisition step of acquiring flatness within an exposure area of ​​the substrate; an evaluation value derivation step of deriving an evaluation value based on the flatness; A method for determining an exposure process, characterized by comprising a decision step of determining whether to perform multi-focus exposure, which involves multiple exposure processes at multiple focus positions, on the exposure area of ​​the substrate based on the evaluation value.

2. 2. The method according to claim 1, wherein the evaluation value deriving step includes a step of deriving the evaluation value based on data relating to the depth of focus of a projection optical system included in an exposure apparatus that performs the exposure process and the flatness.

3. The method according to claim 2 , wherein the data relating to the flatness is a maximum value and a minimum value of the flatness within a shot area.

4. The method according to claim 2 , wherein the data relating to the flatness includes maximum and minimum values ​​of the flatness in a plurality of regions obtained by dividing the shot region.

5. The method according to claim 4 , wherein the data relating to the flatness includes a maximum value and a minimum value of the flatness at the center of each of the plurality of regions obtained by dividing the shot region.

6. The method according to claim 2, characterized in that the evaluation values ​​include a first evaluation value based on the depth of focus and the maximum and minimum values ​​of the flatness within the shot area, and a second evaluation value based on the depth of focus and the maximum and minimum values ​​of the flatness of multiple areas into which the shot area is divided.

7. 2. The method according to claim 1, wherein the exposure conditions for the multi-focal exposure are set based on at least one of the flatness and the evaluation value.

8. 8. The method according to claim 7, wherein the exposure conditions include the number of different focus positions in the multi-focal exposure.

9. 8. The method of claim 7, wherein the exposure conditions include a plurality of different focus positions in the multi-focal exposure.

10. The method according to claim 1, characterized in that the determination step includes a step of determining, based on the evaluation value, one of the following exposure processes for the exposure area of ​​the substrate: a single exposure process, the multi-focus exposure process, or a divided exposure process in which the exposure area is divided into multiple areas and exposed.

11. 11. The method according to claim 10, wherein when the divided exposure is determined, the division of the exposure area is performed based on a pattern formed on the original.

12. 11. The method according to claim 10, wherein when the divided exposure is determined, exposure processing conditions for each divided area into which the exposure area is divided are set based on at least one of the flatness and the evaluation value.

13. The method according to claim 1 , wherein the flatness is obtained by a measurement unit included in the exposure apparatus.

14. 2. The method according to claim 1, wherein the flatness is obtained by a measurement device that is an external device to the exposure apparatus.

15. An exposure apparatus that exposes a substrate by projecting an image of a pattern of an original onto the substrate, characterized in that the exposure apparatus exposes the substrate using an exposure process determined based on the determination method described in any one of claims 1 to 14.

16. An exposure method for exposing a substrate by projecting an image of a pattern of an original onto the substrate, the exposure method comprising exposing the substrate by an exposure process determined based on the determination method according to any one of claims 1 to 14.

17. exposing a substrate to an exposure process determined based on the determination method according to any one of claims 1 to 14; developing the exposed substrate; and producing an article from the developed substrate.

18. A program, which when executed by a processor, causes the processor to execute the method for determining an exposure process according to any one of claims 1 to 14.

Images