High temperature susceptor using metal matrix composite

Abstract

To provide a susceptor that controls the temperature of a substrate in a processing chamber to avoid defects.SOLUTION: A substrate support assembly 100 includes a metal matrix composite (MMC) susceptor body 110 that supports a substrate in a processing chamber. The MMC susceptor body forms one or more channels 112 that receive a heat transfer fluid. The heat transfer fluid heats the substrate during idle conditions of the processing chamber and cools the substrate during active conditions of the processing chamber.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate to susceptors, such as those used in connection with substrate processing systems, and in particular to susceptors used in high temperature applications. [Background technology]

[0002] In substrate processing and other electronics processes, processing chambers are used to perform substrate processing operations, and the temperature of the substrate in the processing chamber should be controlled to avoid defects. Summary of the Invention

[0003] The following is a simplified summary of the present disclosure to provide a basic understanding of some aspects of the disclosure. This summary is not an exhaustive overview of the disclosure. It is not intended to identify key or critical elements of the disclosure, nor is it intended to delineate any scope of particular embodiments of the disclosure or any scope of the claims. Its sole purpose is to present some concepts of the disclosure in a simplified form as a prelude to the more detailed description presented later.

[0004] In one aspect of the present disclosure, a substrate support assembly includes a metal matrix composite (MMC) susceptor body configured to support a substrate in a processing chamber. The MMC susceptor body forms one or more channels configured to receive a heat transfer fluid. The heat transfer fluid is operable to heat the substrate during an idle state of the processing chamber. The heat transfer fluid is operable to cool the substrate during an active state of the processing chamber.

[0005] In another aspect of the present disclosure, a system includes a metal matrix composite (MMC) susceptor body configured to support a substrate in a processing chamber. The MMC susceptor body forms one or more channels. The system further includes one or more fluid temperature adjustment devices configured to adjust a temperature of a heat transfer fluid. The system further includes a controller coupled to the one or more fluid temperature adjustment devices and the flow rate adjustment device. In response to determining that the processing chamber is in an idle state, the controller is for causing a first temperature adjustment of the heat transfer fluid flowing through the one or more channels via at least one of the one or more fluid temperature adjustment devices to heat the substrate to a first temperature between about 300 degrees Celsius and about 400 degrees Celsius. In response to determining that the processing chamber is in an active state, the controller is for causing a second temperature adjustment of the heat transfer fluid flowing through the one or more channels via one or more of the one or more fluid temperature adjustment devices to cool the substrate to a second temperature between about 300 degrees Celsius and about 400 degrees Celsius.

[0006] In another aspect of the present disclosure, the method includes flowing a heat transfer fluid through one or more channels formed by a metal matrix composite (MMC) susceptor body. The method further includes, in response to a processing chamber being in an idle state, causing a first temperature adjustment of the heat transfer fluid flowing through the one or more channels to heat a substrate disposed on the MMC susceptor body to a first temperature between about 300 degrees Celsius and about 400 degrees Celsius. The method further includes, in response to the processing chamber being in an active state, causing a second temperature adjustment of the heat transfer fluid flowing through the one or more channels to cool a substrate disposed on the MMC susceptor body to a second temperature between about 300 degrees Celsius and about 400 degrees Celsius.

[0007] The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numerals indicate similar elements. It should be noted that different references to "an" or "one" embodiment in the present disclosure are not necessarily to the same embodiment, and that such references mean at least one. [Brief explanation of the drawings]

[0008] [Figure 1] 1 illustrates a substrate support assembly in accordance with certain embodiments. [Figure 2A-C] 1 is a diagram of a plate of a susceptor body of a substrate support assembly, according to certain embodiments. [Figure 3A-C] 1 is a diagram of a gas distribution plate of a substrate support assembly in accordance with certain embodiments. [Figure 4A-C] 1 illustrates portions of a substrate support assembly, in accordance with certain embodiments. [Figure 5] 10A-10C illustrate a method of using a substrate support assembly, in accordance with certain embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0009] The embodiments described herein relate to high temperature susceptors using metal matrix composites (MMCs).

[0010] A substrate processing system is used to process substrates. The substrate is transferred into a processing chamber via a robot (e.g., a transfer chamber robot). The processing chamber is sealed, and a substrate processing operation (e.g., chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma-enhanced CVD (PECVD), plasma-enhanced ALD (PEALD), etching, etc.) is performed on the substrate. The temperature of the substrate should be controlled before, during, and after the substrate processing operation. Failure to control the temperature of the substrate can result in substrate defects, inconsistent substrate performance, reduced yield, etc.

[0011] Some conventional systems use electric resistive heaters in a susceptor to heat the substrate, which do not remove excess heat from the substrate during substrate processing, which can result in substrate defects.

[0012] The components, systems, and methods disclosed herein provide high temperature susceptors using MMCs.

[0013] The substrate support assembly includes an MMC susceptor body configured to support a substrate in a processing chamber. The MMC susceptor body forms a channel configured to receive a heat transfer fluid. In some embodiments, the MMC susceptor body includes a first plate and a second plate. A lower surface of the first plate forms the channel, and an upper surface of the second plate is bonded to a portion of the lower surface of the first plate. In some embodiments, the MMC susceptor body (e.g., a high-temperature susceptor, a susceptor fabricated from a high-thermal conductivity material MMC) and the heat transfer fluid (e.g., a high-temperature heat transfer fluid) are operable to be heated to a temperature between about 300 degrees Celsius and about 400 degrees Celsius.

[0014] The heat transfer fluid in the channels is operable to heat a substrate disposed on the MMC susceptor body (e.g., to about 350 degrees Celsius) during an idle state of the processing chamber (e.g., not performing substrate processing operations). The heat transfer fluid in the channels is operable to cool a substrate disposed on the MMC susceptor body (e.g., to about 350 degrees Celsius) during an active state of the processing chamber (e.g., performing substrate processing operations). The heat transfer fluid can remove excess heat imparted to the substrate by the substrate processing operations (e.g., that would heat the substrate to temperatures above about 350 degrees Celsius).

[0015] In some embodiments, a coating (e.g., one or more dielectric materials, a mixture of dielectric materials, alumina, etc.) is provided on the MMC susceptor body, the coating and the MMC susceptor body having similar coefficients of thermal expansion.

[0016] The components, systems, and methods disclosed herein have advantages over conventional solutions. The substrate support assembly of the present disclosure is configured for use at elevated temperatures (e.g., about 300 to about 400 degrees Celsius) compared to conventional solutions configured for use at lower temperatures. The heat transfer fluid of the present disclosure is operable to heat a substrate to elevated temperatures (e.g., about 300 to about 400 degrees Celsius) and maintain the substrate at elevated temperatures (e.g., cool the substrate to substantially the same temperature) during substrate processing compared to conventional solutions that do not heat the substrate to elevated temperatures and maintain (e.g., cool) the substrate at those temperatures during substrate processing operations. The substrate support assembly of the present disclosure can provide more precise control of substrate temperature (e.g., improved substrate temperature uniformity and control within 10 degrees Celsius before, during, and after substrate processing) compared to conventional solutions. The substrate support assembly of the present disclosure provides fewer substrate defects, more consistent substrate performance, and improved yield compared to conventional solutions.

[0017] 1 is a diagram illustrating a substrate support assembly 100 according to some embodiments. In some embodiments, the substrate support assembly 100 includes one or more of an electrostatic chuck, a vacuum chuck, a susceptor, a workpiece support surface, etc. In some embodiments, the substrate support assembly 100 chucks (e.g., secures) a substrate to an upper surface of the MMC susceptor body 110 (e.g., to ensure contact with the MMC susceptor body 110, to provide uniform contact, etc.). The substrate may refer to a wafer, a semiconductor, glass, a glass substrate, an electronic device, a glass device, a display device, etc.

[0018] In some embodiments, the substrate support assembly 100 is disposed in a processing chamber such as a plasma processing chamber, an annealing chamber, a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, an ion implantation chamber, an etching chamber, a deposition chamber (e.g., an atomic layer deposition (ALD) chamber, a chemical vapor deposition (CVD) chamber, a physical vapor deposition (PVD) chamber, and / or their plasma-enhanced (PE) versions, such as PEALD, PECVD, PEPVD, etc.), an annealing chamber, etc. In some embodiments, the processing chamber has a high-density plasma (HDP) source with a high temperature (e.g., greater than 350 degrees Celsius) to impart a large amount of heat to the substrate. Traditionally, the large amount of heat increases the substrate temperature, thereby creating problems for the substrate (e.g., creating problems for devices on glass). To precisely control the substrate temperature, the substrate support assembly 100, including the MMC susceptor body 110 and a heat transfer fluid (e.g., a high-temperature heat transfer fluid), is used to remove the large amount of heat from the plasma source (e.g., to maintain the substrate at a substantially constant temperature) and to maintain a set temperature for the substrate.

[0019] The substrate support assembly 100 includes an MMC susceptor body 110. The substrate support assembly 100 may include a susceptor (e.g., an electrostatic chuck (ESC or E-chuck) susceptor) that includes the susceptor body 110. The MMC susceptor body 110 forms channels 112 (e.g., heating channels and / or cooling channels) for receiving a heat transfer fluid. In some embodiments, the heat transfer fluid is a synthetic organic heat transfer medium. In some embodiments, the heat transfer fluid is operable for use in the liquid phase in a sealed, forced circulation heat transfer system. In some embodiments, the heat transfer fluid is operable for use over an operating range (e.g., from about -5 degrees Celsius to about 400 degrees Celsius) while being maintained under pressure. In some embodiments, the heat transfer fluid has a boiling range of about 350 degrees Celsius to above about 400 degrees Celsius at atmospheric pressure. In some embodiments, the heat transfer fluid is operable to not leave deposits on walls. In some embodiments, the heat transfer fluid has a liquid, clear appearance at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a density of about 1.0 grams per milliliter to about 1.1 (about 1.04 to about 1.05) grams per milliliter at about 20 degrees Celsius. In some embodiments, the heat transfer fluid has a viscosity of about 42 square millimeters per second to about 52 square millimeters per second at about 20 degrees Celsius. In some embodiments, the heat transfer fluid is compatible with graphite, polytetrafluoroethylene (PTFE), and fluoroelastomers. In some embodiments, the heat transfer fluid is operable to be heated to about 350 degrees Celsius to about 400 degrees Celsius. In some embodiments, the heat transfer fluid is operable to be heated to a temperature between about 300 degrees Celsius and about 400 degrees Celsius. In some embodiments, the heat transfer fluid is configured to maintain the MMC susceptor body within about 10 degrees Celsius during substrate processing. In some embodiments, the substrate support assembly 100 (eg, the MMC susceptor body 110) does not include an electrical resistance heater.In some embodiments, the substrate support assembly 100 (eg, the MMC susceptor body 110) includes one or more electrical resistance heaters in addition to the heat transfer fluid to control the temperature of the substrate.

[0020] In some embodiments, a substrate is disposed (e.g., clamped, electrostatically clamped) on the substrate support assembly 100 (e.g., to the MMC susceptor body 110). In some embodiments, in response to the processing chamber being idle (e.g., not performing substrate processing), the substrate support assembly 100 maintains the substrate temperature within + or −10 degrees of a predetermined temperature (e.g., a predetermined temperature between about 200 degrees Celsius and about 350 degrees Celsius), and in response to the processing chamber being active (e.g., performing substrate processing, radio frequency (RF) turned on, plasma processing, etc.), the substrate support assembly 100 maintains the substrate within + or −10 degrees of the predetermined temperature. The substrate support assembly 100 is configured to exhaust heat from the plasma source (e.g., heat from the substrate) during substrate processing.

[0021] In some embodiments, the MMC susceptor body 110 includes an upper plate 114 and a lower plate 116 (e.g., bonded to one another). In some examples, the channel 112 is formed by the lower surface of the upper plate 114, and the upper surface (e.g., a flat upper surface) of the lower plate 116 is fixed (e.g., bonded, clamped, welded, etc.) to at least a portion of the lower surface of the upper plate 114. In some examples, the channel 112 is formed by the upper surface of the lower plate 116, and the lower surface (e.g., a flat lower surface) of the upper plate 114 is fixed (e.g., bonded, clamped, welded, etc.) to at least a portion of the upper surface of the lower plate 116. In some examples, the channel 112 is formed by the lower surface of the upper plate 114 and by the upper surface of the lower plate 116.

[0022] At least a portion of the MMC susceptor body 110 (e.g., the upper plate 114, the lower plate) is made of an MMC material. In some embodiments, the upper plate 114 and the lower plate 116 include an MMC material. In some embodiments, the upper plate 114 and the lower plate 116 are made of an MMC material. In some embodiments, the MMC material (e.g., the susceptor body 110, the upper plate 114, the lower plate 116, etc.) is made of a metal matrix and a ceramic. The metal matrix can be one or more of an aluminum matrix, a magnesium matrix, a titanium matrix, a cobalt matrix, a cobalt-nickel alloy matrix. The ceramic can be one or more of silicon carbide, carbon fiber, boron filament, alumina, etc. The ceramic can be particles, fibers, filaments, etc. In some embodiments, the MMC susceptor body 110 is about 70% ceramic by volume and about 30% metal by volume. In some embodiments, the MMC susceptor body 110 is at least about 40% ceramic by volume (e.g., at least about 50% ceramic particles by volume). In some embodiments, the MMC susceptor body 110 is fabricated by dispersing a reinforcing material (e.g., ceramic particles) in a metal matrix. In some embodiments, the reinforcing material is coated to prevent chemical reaction with the metal matrix (e.g., nickel- or titanium boride-coated carbon fiber). The metal matrix can be a monolithic material with the reinforcing material embedded within it.

[0023] In some embodiments, the substrate support assembly 100 includes a coating 118 (e.g., a plasma spray coating, an e-chuck layer, alumina, one or more dielectric materials, etc.) on the MMC substrate body 110 (e.g., on the top surface of the upper plate 114). The coating 118 may be on the top surface of the MMC substrate body 110 (e.g., the top surface of the upper plate 114). The coating 118 may protect the MMC substrate body 110 from substrate processing operations. The coating 118 may have a first coefficient of thermal expansion, and the substrate body may have a second coefficient of thermal expansion that is substantially the same as the first coefficient of thermal expansion.

[0024] In some embodiments, the substrate support assembly 100 includes a gas distribution plate 120 (e.g., a helium distribution plate). The gas distribution plate 120 is fixed to the MMC susceptor body 110 (e.g., to the lower plate 116) (e.g., fastened by screws, bolts, or other fasteners). The gas distribution plate 120 includes channels 122. Gas (e.g., helium, argon, etc.) flows through the channels 122. Holes 119 in the MMC substrate body 110 (e.g., hole 119A in the coating 118, hole 119B in the upper plate 114, and hole 119C in the lower plate 116) align with one or more portions of the channels 122. Gas flows through the channels 122 and the holes 119 to a position above the MMC susceptor body 110 (e.g., a position below the substrate). The gas distribution plate 120 can substantially uniformly distribute gas through the holes 119 to different positions below the substrate. The substrate support assembly 100 may be an electrostatic chuck that uses a voltage to secure the substrate to the MMC susceptor body 110. The pressure provided by the gas flowing through the channels 112 and holes 119 may be less than the pressure provided by the electrostatic chuck voltage securing the substrate to the MMC susceptor body 110. In some embodiments, at least a portion of the gas distribution plate 120 includes a coating (e.g., a plasma spray coating, alumina, one or more dielectric materials, etc.) to prevent corrosion during substrate processing.

[0025] In some embodiments, the substrate support assembly 100 includes a susceptor shaft 130. The susceptor shaft 130 is disposed below the gas distribution plate 120. In some embodiments, at least a portion of the susceptor shaft 130 includes a coating (e.g., a plasma spray coating, alumina, one or more dielectric materials, etc.) to prevent corrosion during substrate processing.

[0026] A heat transfer fluid is configured to flow through supply channels 132 in the susceptor shaft 130 to channels 112 in the MMC susceptor body 110 and from channels 112 in the MMC susceptor body 110 to return channels 134 in the susceptor shaft 130. The heat transfer fluid may flow through the supply channels 132, 112, and return channels 134 at a rate of about 50 liters per minute to about 150 liters per minute. The heat transfer fluid may be at a temperature between about 300 degrees Celsius and about 400 degrees Celsius. In some embodiments, the supply channels 132 and the return channels 134 are formed by the susceptor shaft 130. In some embodiments, a supply pipe forms the supply channel 132 and a return pipe forms the return channel 134. The supply pipe and return pipe are routed through the interior volume of the susceptor shaft 130.

[0027] In some embodiments, the substrate support assembly 100 includes a manifold 138 (e.g., a high-temperature heat transfer fluid manifold). Heat transfer fluid may flow from a heat transfer fluid supply (e.g., a heat transfer fluid source, a pump, a valve, etc.) through the supply channels 132, through a first channel in the manifold 138, through the channel 112, through a second channel in the manifold 138, and through the return channels 134. The heat transfer fluid from the return channels 134 may be treated (e.g., heated, cooled, filtered, increased in flow rate, pumped, etc.) and provided to the supply channels 132. The manifold 138 may be fixed (e.g., clamped, bonded, etc.) to the MMC susceptor body 110 (e.g., to the lower plate 116). In some embodiments, the manifold is fixed to one or more of the lower plate 116, the gas distribution plate 120, and / or the susceptor shaft 130.

[0028] Gas (e.g., helium, argon, etc.) is configured to flow through gas channels 136 in the susceptor shaft 130 to channels 122 in the gas distribution plate 120 and through holes 119 in the susceptor body 110 to a position below the substrate. In some embodiments, the gas channels 136 are formed by the susceptor shaft 130. In some embodiments, gas conduits form the gas channels 136. The gas conduits are routed through the interior volume of the susceptor shaft 130.

[0029] In some embodiments, the supply channel 132 and the return channel 134 each have an inner diameter of about 0.5 inches to about 1.5 inches (e.g., about 1 inch), and the gas channel 136 has an inner diameter of about 0.2 inches to about 0.3 inches (e.g., about 0.25 inches).

[0030] The processing chamber may be used to perform substrate processing operations that increase the temperature within the processing chamber. The substrate support assembly 100 may heat the MMC susceptor body 110 to a temperature above room temperature and below the temperature of the substrate processing operation. In some examples, the substrate processing operation is a temperature above the temperature of the MMC susceptor body 110. For example, the substrate processing operation may exceed 350 degrees Celsius, and the heat transfer fluid may heat the MMC susceptor body 110 to about 350 degrees Celsius. The heat transfer fluid in the channels 112 may be operable to heat the substrate to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius) during an idle state of the processing chamber (e.g., not performing a substrate processing operation). The heat transfer fluid in the channels 112 may be operable to cool the substrate to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius) during an active state of the processing chamber (e.g., performing a substrate processing operation).

[0031] In some embodiments, the heat transfer fluid is at a lower temperature (e.g., about 300-340 degrees Celsius) for cooling the substrate (e.g., during substrate processing operations), and the heat transfer fluid is at a higher temperature (e.g., about 350-400 degrees Celsius) for heating the substrate (e.g., during idle states of the processing chamber).

[0032] In some embodiments, the controller 109 controls various aspects of the substrate support assembly 100, the processing chambers, the robot, and / or the substrate processing system. The controller 109 is and / or includes a computing device such as a personal computer, a server computer, a programmable logic controller (PLC), a microcontroller, etc. The controller 109 includes one or more processing devices, which in some embodiments are general-purpose processing devices such as a microprocessor, a central processing unit, etc. More specifically, in some embodiments, the processing device is a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets or a combination of instruction sets. In some embodiments, the processing device is one or more special-purpose processing devices such as an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a digital signal processor (DSP), a network processor, etc. In some embodiments, the controller 109 includes a data storage device (e.g., one or more disk drives and / or solid-state drives), a main memory, a static memory, a network interface, and / or other components. In some embodiments, the controller 109 executes instructions to perform any one or more of the methods or processes described herein. The instructions are stored (during execution of the instructions) in a computer-readable storage medium, including one or more of the main memory, static memory, secondary storage, and / or processing device. In some embodiments, the controller 109 is used to control one or more parameters of the substrate support assembly 100 (e.g., temperature, pressure, flow rate, voltage, etc.). The controller 109 receives sensor data from one or more sensors associated with the substrate support assembly 100.

[0033] In some embodiments, one or more sensors provide sensor data to the controller 109. The sensors may include one or more of a thermocouple sensor, a heat sensor, a temperature sensor, a pressure sensor, a flow sensor, a voltage sensor, etc.

[0034] In some embodiments, the controller 109 receives sensor data from a sensor (e.g., a thermocouple, a thermal sensor, a temperature sensor) related to the temperature of the substrate (e.g., the temperature of the MMC susceptor body 110). In response to the temperature of the substrate meeting a first threshold temperature (e.g., greater than about 350 degrees Celsius), the controller 109 causes a heat transfer fluid to flow through the channels 112 at a lower temperature (e.g., between 300 and 340 degrees Celsius) to cool the substrate. In response to the temperature meeting a second threshold temperature (e.g., less than about 350 degrees Celsius), the controller 109 causes a heat transfer fluid to flow through the channels 112 at a higher temperature (e.g., between 350 and 400 degrees Celsius) to heat the substrate.

[0035] In some embodiments, the controller 109 receives sensor data from a sensor (e.g., a pressure sensor, a flow sensor, etc.) related to the pressure of the gas associated with the gas distribution plate 120. In some embodiments, the sensor data is related to a gas inlet (e.g., of the gas channel 136). In some embodiments, the sensor data is related to the channel 122. In some embodiments, the sensor data is related to a position below a substrate disposed on the MMC susceptor body 110. The controller 109 can control the gas to a threshold pressure value. In some embodiments, the controller 109 receives voltage data related to an electrostatic chucking force that secures the substrate to the MMC susceptor body 110. In some embodiments, the threshold pressure value of the gas is determined based on the voltage data (e.g., the electrostatic chucking force).

[0036] In some embodiments, the system includes a substrate support assembly 100, a controller 109, one or more sensors, one or more fluid temperature regulation devices (e.g., fluid heaters, fluid coolers, etc.), and one or more flow regulation devices (e.g., pumps, valves, recirculation pumps, etc.). In response to the substrate processing apparatus being activated (e.g., turned on, operated by the controller 109), the controller 109 causes a first flow regulation device (e.g., pump, recirculation pump, etc.) to flow a heat transfer fluid through the supply channel 132, the channel 112, and the return channel 134. The controller 109 further causes the fluid temperature regulation device to regulate the temperature of the heat transfer fluid (e.g., cause a heater to heat the recirculating heat transfer fluid to about 300 degrees Celsius to about 400 degrees Celsius). The controller 109 causes a flow regulation device (e.g., a valve, a pump) to flow a gas (e.g., helium) through gas channel 136, through channel 122, and through holes 119 to the top surface of the substrate support assembly 100 (e.g., below the substrate). The controller 109 determines that the processing chamber meets a first threshold temperature (e.g., idle, below 350 degrees Celsius) and causes a fluid temperature regulation device (e.g., a heater) to regulate the temperature of the heat transfer fluid (e.g., between about 350 degrees Celsius and about 400 degrees Celsius) to heat the substrate to about 350 degrees Celsius. The controller 109 determines that the processing chamber meets a second threshold temperature (e.g., is in an active state, exceeds 350 degrees Celsius) and causes the fluid temperature adjustment device (e.g., a chiller, a condenser, etc.) to adjust the temperature of the heat transfer fluid (e.g., to about 300 to about 350 degrees Celsius) to cool the substrate to about 350 degrees Celsius. The controller 109 controls the temperature of the substrate by controlling the temperature of the heat transfer fluid to heat the substrate during the idle state and to cool the substrate during the active state. The controller 109 may control the temperature of the substrate to within + or -10 degrees (e.g., to about 340 to about 360 degrees Celsius).

[0037] 2A-2C show views of a plate (e.g., upper plate 114 in FIG. 1 ) of an MMC susceptor body 210 (e.g., MMC susceptor body 110 in FIG. 1 ) of a substrate support assembly 200 (e.g., substrate support assembly 100 in FIG. 1 ) according to certain embodiments. FIG. 2A is a top view, FIG. 2B is a side view, and FIG. 2C is a bottom view. Features with like reference numbers compared to features in other figures may include the same or similar structure and / or function.

[0038] MMC susceptor body 210 includes a coating 218 (e.g., coating 118 in FIG. 1 ) on an upper surface of MMC susceptor body 220. Holes 219 (e.g., holes 119 in FIG. 1 ) for a gas (e.g., helium) are formed by coating 218 (e.g., hole 219A) and by the MMC susceptor body (e.g., hole 219B in upper plate 214). The lower surface of upper plate 214 of MMC susceptor body 210 forms channels 212 (e.g., channels 112 in FIG. 1 ) for receiving a heat transfer fluid for heating MMC susceptor body 210 and a substrate disposed on MMC susceptor body 210.

[0039] 3A-3C show views of a gas distribution plate 320 (e.g., gas distribution plate 120 of FIG. 1) of a substrate support assembly 300 (e.g., substrate support assembly 100 of FIG. 1) according to certain embodiments. FIG. 3A is a top view, FIG. 3B is a side view, and FIG. 3C is a bottom view. Features with like reference numbers compared to features in other figures may include the same or similar structure and / or function.

[0040] The upper surface of the gas distribution plate 320 may form channels 322 for receiving gas (e.g., helium, argon, etc.), and the gas distribution plate 320 may be fixed (e.g., fastened) to a plate (e.g., the lower plate 116 of the MMC susceptor body 110 in FIG. 1 ) to provide an upper surface for the channels 322. One or more adapters 324 (e.g., gas plumbing inlets) may be configured to couple the channels 322 to gas channels (e.g., gas channels 136 in FIG. 1 ) in the susceptor shaft (e.g., the susceptor shaft 130 in FIG. 1 ) via gas inlet holes 326. The channels 322 align with holes in the MMC susceptor body (e.g., holes 119 in FIG. 1 , holes 219 in FIGS. 2A and 2C ) to provide gas to a location below the substrate.

[0041] 4A-4C show views of a portion of a substrate support assembly 400 (e.g., substrate support assembly 100 of FIG. 1) according to certain embodiments. FIG. 4A is a side view of a susceptor shaft 430 (e.g., susceptor shaft 130 of FIG. 1), FIG. 4B is a bottom view of the susceptor shaft 430, and FIG. 4C is a side view of the substrate support assembly 410 (e.g., substrate support assembly 100 of FIG. 1) without the susceptor shaft 430. Features with like reference numbers compared to features in other figures may include the same or similar structure and / or function.

[0042] The susceptor shaft 130 includes an elongated lower portion and a flanged upper portion configured to be secured (e.g., clamped) to a gas distribution plate 420 (e.g., gas distribution plate 120 of FIG. 1, gas distribution plate 320 of FIGS. 3A-3C, etc.).

[0043] A supply channel 432 (e.g., supply channel 132 in FIG. 1 ), a return channel 434 (e.g., return channel 134 in FIG. 1 ), and a gas channel 436 (e.g., gas channel 436 in FIG. 1 ) are disposed in the susceptor shaft 130. In some embodiments, the supply channel 432, the return channel 434, and the gas channel 436 are formed by tubes routed through the susceptor shaft 430.

[0044] 5 illustrates a method of using a substrate support assembly according to certain embodiments. In some embodiments, one or more of the operations of method 500 are performed by a controller (e.g., controller 109 of FIG. 1 ). Although shown in a particular sequence or order, the order of processes can be changed unless otherwise specified. Therefore, the illustrated embodiment should be understood as an example only, and the illustrated processes can be performed in a different order, and some processes can be performed in parallel. Furthermore, one or more processes can be omitted in various embodiments. Thus, not all processes are required in all embodiments.

[0045] 5, in block 502, a heat transfer fluid is caused to flow through channels formed by the MMC susceptor body to heat the MMC susceptor body. A controller may cause a fluid temperature regulation device (e.g., a heater) to heat the heat transfer fluid to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius), and the controller may cause the heat transfer fluid to flow through the MMC susceptor body (e.g., at about 50 liters per minute to about 150 liters per minute) via a flow regulation device (e.g., a pump, a recirculation pump, and / or a valve) to heat the MMC susceptor body to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius). The MMC susceptor body can be heated (e.g., via a heat transfer fluid) to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius) before a substrate is placed on the MMC susceptor body. In response to the substrate being placed on the MMC susceptor body, the substrate is heated (e.g., via heat conduction from the MMC susceptor body) to a temperature between about 300 degrees Celsius and about 400 degrees Celsius (e.g., about 350 degrees Celsius).

[0046] In block 504, a gas (e.g., helium, argon, etc.) is caused to flow through gas channels in the susceptor shaft, through channels in the gas distribution plate, and through holes in the MMC susceptor body to a position below the substrate. A controller may provide the gas flow via a flow regulating device (e.g., a pump, a valve, etc.). The gas exerts pressure on the underside of the substrate. In some embodiments, the outer periphery of the substrate is substantially sealed in the MMC susceptor body so that the gas is substantially confined below the substrate. The controller may provide the gas flow based on sensor data (e.g., pressure sensor data, flow rate data, etc.). The controller may cause the pressure of the gas below the substrate to be less than a chucking pressure (e.g., electrostatic chucking pressure) of the MMC susceptor body.

[0047] In block 506, it is determined that the processing chamber is in an idle state. In some embodiments, the controller receives sensor data related to the temperature of the substrate and / or the MMC susceptor body. In response to determining that the temperature meets a first threshold temperature (e.g., about 350 degrees Celsius or less), the controller may determine that the processing chamber is in an idle state (e.g., not performing a substrate processing operation). In some embodiments, the controller receives data indicating that the processing chamber is not performing a substrate processing operation. In some embodiments, the controller controls the processing chamber.

[0048] In block 508, in response to the processing chamber being in an idle state, a heat transfer fluid is caused to flow through the channels formed by the MMC susceptor body to heat the substrate. The controller may cause a first temperature adjustment of the heat transfer fluid flowing through the channels of the MMC susceptor body via a fluid temperature adjustment device (e.g., a heater) to heat the substrate. During the idle state, the heat transfer fluid is at a temperature below the substrate processing temperature (e.g., about 350 degrees Celsius) (e.g., between about 350 degrees Celsius and 400 degrees Celsius) to heat the substrate and maintain it at a temperature closer to the substrate processing temperature (e.g., about 350 degrees Celsius) than room temperature.

[0049] In block 510, it is determined that the processing chamber is in an active state. The controller may determine that the processing chamber is in an active state based on sensor data related to the temperature of the substrate and / or the MMC susceptor body. The controller may receive data indicating that the processing chamber is performing a substrate processing operation. The controller may have a schedule indicating when the processing chamber should perform a substrate processing operation. The controller may cause the processing chamber to perform a substrate processing operation.

[0050] In block 512, in response to the processing chamber being in an active state, a heat transfer fluid is caused to flow through channels formed by the MMC susceptor body to cool the substrate. The controller may cause a second temperature adjustment of the heat transfer fluid flowing through the channels of the MMC susceptor body via a fluid temperature adjustment device (e.g., a cooler, a condenser) to cool the substrate. The controller may cause the heat transfer fluid to flow through the MMC susceptor body at a lower temperature (e.g., about 300 to about 350 degrees Celsius) than in block 508. The heat transfer fluid may absorb excess heat from substrate processing to maintain the substrate (e.g., and the MMC susceptor body) within a threshold temperature (e.g., + or - 10 degrees Celsius) of the idle temperature of the substrate on the MMC susceptor body (e.g., about 350 degrees Celsius).

[0051] In some embodiments, each of the operations of method 500 is performed while maintaining a sealed environment in the processing chamber. In some embodiments, the predetermined temperature of the heat transfer fluid, the MMC susceptor body, and / or the substrate is adjusted based on the temperature of the substrate processing operation. In some embodiments, for each predetermined temperature of the heat transfer fluid, the MMC susceptor body, and / or the substrate associated with the corresponding substrate processing operation, the temperature of the heat transfer fluid, the MMC susceptor body, and / or the substrate is maintained within a threshold temperature (e.g., + or -10 degrees Celsius) before, during, and after the corresponding substrate processing operation.

[0052] Unless otherwise specified, terms such as "causing," "determining," "heating," "cooling," "flowing," "receiving," "transmitting," "generating," and the like refer to acts and processes performed or implemented by a computer system that manipulate and convert data represented as physical (electronic) quantities in computer system registers and memory into other data similarly represented as physical quantities in computer system memory or registers or other such information storage, transmission, or display devices. Also, as used herein, the terms "first," "second," "third," "fourth," and the like are intended as labels distinguishing between different elements and do not imply any ordering by their numerical designation.

[0053] The examples described herein also relate to apparatus for performing the methods described herein. In some embodiments, the apparatus is specially constructed to perform the methods described herein, or the apparatus comprises a general-purpose computer system that is selectively programmed by a computer program stored in the computer system. In some embodiments, such a computer program is stored in a computer-readable tangible storage medium.

[0054] The methods and illustrative examples described herein are not inherently related to any particular computer or other apparatus. Various general-purpose systems may be used in accordance with the teachings described herein, or more specialized apparatus may be constructed to perform the methods described herein and / or each of their individual functions, routines, subroutines, or operations. Example structures for a variety of these systems are set forth in the description above.

[0055] The preceding description has set forth numerous specific details, such as examples of specific systems, components, methods, etc., to provide a thorough understanding of some embodiments of the present disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of the present disclosure can be practiced without these specific details. In other instances, well-known components or methods have not been described in detail or have been presented in simple block diagram form to avoid unnecessarily obscuring the present disclosure. Thus, the specific details described are by way of example only. It is contemplated that particular embodiments may vary from these illustrative details and still be within the scope of the present disclosure.

[0056] As used herein, the terms "on," "beneath," "between," "disposed on," "supporting," and "over" refer to the relative position of one layer of material or component with respect to another layer or component. For example, a layer disposed on, above, or below another layer may be in direct contact with the other layer or may have one or more intervening layers. Moreover, a layer disposed between two layers may be in direct contact with the two layers or may have one or more intervening layers. Similarly, unless otherwise specified, a feature disposed between two features may be in direct contact with the adjacent feature or may have one or more intervening layers.

[0057] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described with respect to that embodiment is included in at least one embodiment. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or." When the terms "about" or "approximately" are used herein, this means that the stated nominal value is accurate to within ±10%.

[0058] Although the operations of the methods herein have been illustrated and described in a particular order, the order of the operations of each method may be changed such that some operations are performed at least partially concurrently with other operations, or such that some operations are performed in reverse order. In other embodiments, the sub-operations of instructions or separate processes are intermittent and / or alternating.

[0059] It is to be understood that the above description is illustrative, and not restrictive. Many other embodiments will become apparent to those skilled in the art upon reading and understanding the above description. The scope of the present disclosure should, therefore, be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims

1. METAL MATRIX COMPOSITE (MMC) SUSCEPTOR BODY CONFIGURED TO SUPPORT A SUBSTRATE IN A PROCESSING CHAMBER - Patent application wherein the MMC susceptor body forms one or more channels configured to receive a heat transfer fluid, the heat transfer fluid operable to heat the substrate during an idle state of the processing chamber, and the heat transfer fluid operable to cool the substrate during an active state of the processing chamber.

2. 10. The substrate support assembly of claim 1, wherein the heat transfer fluid is operable to heat the substrate to a first temperature between about 300 degrees Celsius and about 400 degrees Celsius during the idle state of the processing chamber, and wherein the heat transfer fluid is operable to cool the substrate to a second temperature between about 300 degrees Celsius and about 400 degrees Celsius during the active state of the processing chamber.

3. 10. The substrate support assembly of claim 1, further comprising a coating disposed on the MMC susceptor body, the coating having a first coefficient of thermal expansion similar to a second coefficient of thermal expansion of the MMC susceptor body.

4. 2. The substrate support assembly of claim 1, further comprising a gas distribution plate disposed below the MMC susceptor body, the gas distribution plate defining a plurality of channels operable to allow gas to flow through one or more channels of the gas distribution plate, through holes in the MMC susceptor body, and to a position below the substrate supported by the MMC susceptor body.

5. 5. The substrate support assembly of claim 4, wherein the MMC susceptor body comprises a first plate and a second plate, a lower surface of the first plate forming one or more channels, the second plate being bonded to at least a portion of the lower surface of the first plate, and an upper surface of the gas distribution plate forming the plurality of channels, and at least a portion of the upper surface of the gas distribution plate being fastened to the second plate.

6. 5. The substrate support assembly of claim 4, further comprising a susceptor shaft disposed below the gas distribution plate, wherein the heat transfer fluid is operable to flow through supply channels in the susceptor shaft to the MMC susceptor body and from the MMC susceptor body through return channels in the susceptor shaft, and wherein gas is operable to flow through gas channels in the susceptor shaft to the gas distribution plate, through the plurality of channels formed in the gas distribution plate, through the holes through the MMC susceptor body, and to the position below the substrate supported by the MMC susceptor body.

7. The substrate support assembly of claim 6 , further comprising a plasma spray coating on at least a portion of the gas distribution plate and at least a portion of the susceptor shaft to prevent corrosion during substrate processing.

8. 7. The substrate support assembly of claim 6, wherein the supply channel is formed by a first tube and the return channel is formed by a second tube, the first tube and the second tube being disposed in the susceptor shaft.

9. The substrate support assembly of claim 1 , wherein the substrate support assembly is an electrostatic chuck.

10. 2. The substrate support assembly of claim 1, wherein the heat transfer fluid is at a third temperature for heating the substrate during the idle state and the heat transfer fluid is at a fourth temperature for cooling the substrate during the active state, the fourth temperature being lower than the third temperature.

11. The substrate support assembly of claim 1 , wherein the heat transfer fluid is operable to flow through the one or more channels of the MMC susceptor body at between about 50 liters per minute and about 150 liters per minute.

12. The substrate support assembly of claim 1, wherein the heat transfer fluid is a synthetic organic heat transfer medium operable to be heated to about 350 degrees Celsius to about 400 degrees Celsius.

13. 10. The substrate support assembly of claim 1, wherein the heat transfer fluid is operable to maintain the substrate within about 10 degrees Celsius during the idle state of the processing chamber and the active state of the processing chamber.

14. The substrate support assembly of claim 1 , wherein the MMC susceptor body comprises a metal matrix composite material comprising a metal matrix and ceramic particles.

15. a metal matrix composite (MMC) susceptor body configured to support a substrate in a processing chamber, the MMC susceptor body forming one or more channels; one or more fluid temperature regulation devices configured to regulate the temperature of the heat transfer fluid; a controller coupled to the one or more fluid temperature regulation devices and flow regulation devices; The system includes: in response to determining that the processing chamber is idle, causing a first temperature adjustment of the heat transfer fluid flowing through the one or more channels to heat the substrate to a first temperature between about 300 degrees Celsius and about 400 degrees Celsius via at least one of the one or more fluid temperature adjustment devices; in response to determining that the processing chamber is in an active state, causing a second temperature adjustment of the heat transfer fluid flowing through the one or more channels to cool the substrate to a second temperature between about 300 degrees Celsius and about 400 degrees Celsius via one or more of the one or more fluid temperature adjustment devices; A system for performing the above.

16. To determine that the processing chamber is in the idle state, the controller: receiving sensor data from a sensor, and determining, based on the sensor data, that a third temperature associated with the substrate satisfies a first threshold temperature; or receiving information indicating that the processing chamber is not performing a substrate processing operation; 16. The system of claim 15, for performing one or more of the following:

17. To determine that the processing chamber is in the active state, the controller: receiving sensor data from a sensor and determining, based on the sensor data, that a fourth temperature associated with the substrate satisfies a second threshold temperature; or receiving information indicating that the processing chamber is performing a substrate processing operation; 16. The system of claim 15, for performing one or more of the following:

18. 16. The system of claim 15, further comprising a flow regulation device, wherein the controller is further configured to cause the fluid to flow through the one or more channels formed by the MMC susceptor body via the flow regulation device.

19. flowing a heat transfer fluid through one or more channels formed by a metal matrix composite (MMC) susceptor body; in response to a processing chamber being idle, causing a first temperature adjustment of the heat transfer fluid flowing through the one or more channels to heat a substrate disposed on the MMC susceptor body to a first temperature between about 300 degrees Celsius and about 400 degrees Celsius; in response to the processing chamber being in an active state, causing a second temperature adjustment of the heat transfer fluid flowing through the one or more channels to cool the substrate disposed on the MMC susceptor body to a second temperature between about 300 degrees Celsius and about 400 degrees Celsius; A method comprising:

20. 20. The method of claim 18, further comprising flowing gas through a gas channel in a susceptor shaft, through a plurality of channels in a gas distribution plate, through holes in the MMC susceptor body, and to a position below the substrate.

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