Light-emitting device and manufacturing method for the same

Abstract

To provide a light-emitting device that can improve light extraction efficiency and a manufacturing method for the same.SOLUTION: A manufacturing method for a light-emitting device includes a step of preparing a structure. The structure includes a wiring board having a wiring part on an upper surface, a light-emitting element, and a protection element. In the light-emitting element, a pair of first electrodes, a first semiconductor layer, and a first element substrate are stacked. In the protection element, a pair of second electrodes, a second semiconductor layer, and a second element substrate are stacked. The pair of first electrodes and the pair of second electrodes are connected to the wiring part while facing an upper surface of the wiring board. The manufacturing method for the light-emitting device includes a step of removing at least a part of the first element substrate of the light-emitting element and at least a part of the second element substrate of the protection element from the structure.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The embodiments relate to a light emitting device and a method for manufacturing the same. [Background technology]

[0002] In recent years, light-emitting devices using light-emitting diodes (LEDs) have become widespread. In such light-emitting devices, there is a demand for improving the light extraction efficiency in order to achieve both high brightness and power saving. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-207349 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments is to provide a light emitting device capable of improving light extraction efficiency and a method for manufacturing the same. [Means for solving the problem]

[0005] A method for manufacturing a light emitting device according to an embodiment includes a step of preparing a structure. The structure includes a wiring substrate having a wiring portion on an upper surface thereof, a light emitting element, and a protective element. In the light emitting element, a pair of first electrodes, a first semiconductor layer, and a first element substrate are stacked. In the protective element, a pair of second electrodes, a second semiconductor layer, and a second element substrate are stacked. The pair of first electrodes and the pair of second electrodes face an upper surface of the wiring substrate and are connected to the wiring portion. The method for manufacturing the light emitting device includes a step of removing, from the structure, at least a portion of the first element substrate of the light emitting element and at least a portion of the second element substrate of the protective element.

[0006] A light emitting device according to an embodiment includes a wiring substrate, a light emitting element disposed on the wiring substrate, a protective element disposed on the wiring substrate, a light-transmitting member disposed on the light emitting element, and a covering member disposed on the wiring substrate, the covering member exposing an upper surface of the light-transmitting member and covering side surfaces of the light emitting element and the protective element, wherein the upper surfaces of the light emitting element and the protective element are located in the same plane. [Effects of the Invention]

[0007] According to the embodiment, it is possible to realize a light emitting device capable of improving light extraction efficiency and a method for manufacturing the same. [Brief explanation of the drawings]

[0008] [Figure 1] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 2] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 3] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 5] 1 is a cross-sectional view showing a light emitting device according to a first embodiment. [Figure 6] 1 is a perspective view showing a light emitting device according to a first embodiment. [Figure 7] 5A to 5C are cross-sectional views illustrating a method for manufacturing a light emitting device according to a second embodiment. [Figure 8] 5A to 5C are cross-sectional views illustrating a method for manufacturing a light emitting device according to a second embodiment. [Figure 9] FIG. 4 is a cross-sectional view showing a light emitting device according to a second embodiment. [Figure 10] FIG. 10 is a cross-sectional view showing a light emitting device according to a third embodiment. [Figure 11] 10A to 10C are cross-sectional views illustrating a method for manufacturing a light emitting device according to a fourth embodiment. [Figure 12] FIG. 10 is a cross-sectional view showing a light emitting device according to a fourth embodiment. [Figure 13] FIG. 10 is a perspective view showing a light emitting device according to a fifth embodiment. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV shown in FIG. [Figure 15] FIG. 14 is a cross-sectional view taken along line XV-XV shown in FIG. [Figure 16A] 10 is a photomicrograph showing the appearance of the light emitting element, the protective element, and the first covering member after being ground. [Figure 16B] 10 is a photomicrograph showing the appearance of the light emitting element, the protective element, and the first covering member after being ground. [Figure 17A] 10 is a photomicrograph showing the appearance of the light emitting element, the protective element, and the first covering member after being ground. [Figure 17B] 10 is a photomicrograph showing the appearance of the light emitting element, the protective element, and the first covering member after being ground. [Figure 17C] 10 is a photomicrograph showing the appearance of the light emitting element, the protective element, and the first covering member after being ground. [Figure 18] 10 is a table showing the surface roughness of the light-emitting element, the protective element, and the first covering member. [Figure 19] 1 is a graph showing the surface profile of one sample, with the horizontal axis representing horizontal position and the vertical axis representing vertical position. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following describes a manufacturing method for a light-emitting device and a light-emitting device according to an embodiment, with reference to the drawings. The drawings are schematic and conceptual, and are appropriately emphasized and simplified. Therefore, the dimensions of each part may not accurately represent the actual product. Furthermore, the dimensional ratios, number, and positional relationships of the components may not necessarily match between the drawings. The same applies to the other drawings described below. The size and positional relationships of components shown in each drawing may be exaggerated for clarity. Furthermore, to avoid overly complex drawings, schematic diagrams may be used in which some elements are omitted, or end views showing only the cut surface may be used as cross-sectional views. Furthermore, in the embodiments, "covering" and "covering" are not limited to direct contact, but also include indirect covering, for example, via another component.

[0010] First Embodiment 1 to 4 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment. FIG. 5 is a cross-sectional view showing the light emitting device according to this embodiment. FIG. 6 is a perspective view showing the light emitting device according to this embodiment.

[0011] (Step of Preparing the Structure 100) 1, a wiring substrate 10, a light emitting element 20, and a protective element 30 are prepared. These may be prepared in any order.

[0012] The wiring board 10 includes an insulating base 11 and a conductive wiring portion 12. The wiring portion 12 is disposed at least on the upper surface 10a of the wiring board 10. In addition to the upper surface 10a of the wiring board 10, the wiring portion 12 may also be disposed inside the wiring board 10 and on the lower surface 10b thereof.

[0013] The light-emitting element 20 is, for example, a light-emitting diode. The light-emitting element 20 includes a pair of first electrodes 21, a first semiconductor layer 22, and a first element substrate 23. In the light-emitting element 20, the pair of first electrodes 21, the first semiconductor layer 22, and the first element substrate 23 are stacked in this order. The first element substrate 23 is, for example, a growth substrate for the first semiconductor layer 22, such as a sapphire substrate.

[0014] In the step of preparing the structure 100 (hereinafter also referred to as the "preparing step"), the thickness of the prepared light emitting element 20 is preferably 100 μm or more, for example, approximately 150 μm, in consideration of ease of mounting on the wiring substrate 10. The thickness of the first element substrate 23 is the thickness of the light emitting element 20 minus the thickness of the first electrode 21 and the thickness of the first semiconductor layer 22, and is, for example, approximately 130 μm. The light emitting element 20 is required to include at least a pair of positive and negative first electrodes 21 on the same side of the light emitting element 20, but multiple pairs of first electrodes 21, or different numbers of positive and negative first electrodes 21, may be provided. The thickness of the first electrode 21 is, for example, approximately 10 μm.

[0015] The first semiconductor layer 22 includes, for example, a gallium nitride (GaN) semiconductor. The thickness of the first semiconductor layer 22 is, for example, approximately 8 μm to 10 μm. In the first semiconductor layer 22, an n-type semiconductor layer 24, an active layer 25, and a p-type semiconductor layer 26 are stacked in this order from the first element substrate 23 side. Of the pair of first electrodes 21, one first electrode 21 is connected to the n-type semiconductor layer 24, and the other first electrode 21 is connected to the p-type semiconductor layer 26. In this specification, "connection" means electrical connection.

[0016] The protective element 30 protects the light-emitting element 20 from surge currents or static electricity and is, for example, a Zener diode. The protective element 30 includes a pair of second electrodes 31, a second semiconductor layer 32, and a second element substrate 33. In the protective element 30, the pair of second electrodes 31, the second semiconductor layer 32, and the second element substrate 33 are stacked in this order. The second element substrate 33 is, for example, a semiconductor substrate, such as a silicon (Si) substrate. In the preparation step, the thickness of the prepared protective element 30 is preferably 100 μm or more, for example, approximately 150 μm, in consideration of ease of mounting on the wiring substrate 10. The thickness of the second element substrate is, for example, approximately 120 μm. The protective element 30 may include at least a pair of positive and negative second electrodes 31 on the same side of the protective element 30. Multiple pairs of second electrodes 31, or different numbers of positive and negative second electrodes 31, may be provided. The thickness of the second electrodes is, for example, approximately 10 μm.

[0017] The second semiconductor layer 32 includes, for example, a silicon semiconductor. The thickness of the second semiconductor layer 32 is, for example, about 20 μm. The second semiconductor layer 32 includes, for example, a base material layer 34 having a p-type conductivity and a + The first semiconductor region 35 has a conductivity type of n + The first semiconductor region 35 includes a second semiconductor region 36 having a dopant type impurity. The impurity concentration in the first semiconductor region 35 is higher than the impurity concentration in the base material layer 34. The first semiconductor region 35 and the second semiconductor region 36 are exposed at the bottom surface of the base material layer 34. The second semiconductor region 36 is separated from the first semiconductor region 35 by the base material layer 34. Of the pair of second electrodes 31, one second electrode 31 is connected to the first semiconductor region 35, and the other second electrode 31 is connected to the second semiconductor region 36.

[0018] After preparing the wiring substrate 10, the light emitting element 20, and the protection element 30, the light emitting element 20 and the protection element 30 are arranged on the wiring substrate 10. At this time, it is preferable to flip-chip connect the light emitting element 20 and the protection element 30 to the wiring substrate 10. That is, each first electrode 21 of the light emitting element 20 is opposed to each wiring portion 12 of the wiring substrate 10, and the first electrode 21 is bonded to the wiring portion 12. Furthermore, each second electrode 31 of the protection element 30 is opposed to each wiring portion 12 of the wiring substrate 10, and the second electrode 31 is bonded to the wiring portion 12. The order of the step of arranging the light emitting element 20 and the step of arranging the protection element 30 on the wiring substrate 10 is arbitrary.

[0019] Each first electrode 21 of the light-emitting element 20 and / or each second electrode 31 of the protection element 30 can be connected to the wiring portion 12 of the wiring substrate 10 via a conductive bonding member. Examples of the bonding member include known bonding members such as eutectic solder, conductive paste, bumps, and plating. Note that each first electrode 21 of the light-emitting element 20 and / or each second electrode 31 of the protection element 30 may be directly bonded to the wiring portion 12 of the wiring substrate 10 without using a bonding member.

[0020] In this manner, the structure 100 is prepared. The structure 100 includes a wiring substrate 10, a light emitting element 20, and a protective element 30. The structure 100 may have only one set, or multiple sets, of at least one light emitting element 20 and at least one protective element 30 for protecting the at least one light emitting element 20 provided on one wiring substrate 10. Note that FIGS. 1 to 4 show only one set consisting of one light emitting element 20 and one protective element 30. In the structure 100, a pair of first electrodes 21 of the light emitting element 20 and a pair of second electrodes 31 of the protective element 30 face the upper surface 10a of the wiring substrate 10 and are connected to the wiring portion 12. The structure 100 may be prepared by manufacturing as described above, or may be obtained from an outside source by purchasing or the like.

[0021] (Step of placing the first covering member 41) Next, as shown in FIG. 2 , a first covering member 41 is disposed on the wiring board 10. The first covering member 41 may be, for example, a resin. Examples of resins used for the first covering member 41 include silicone resin. The first covering member 41 secures the first electrode 21 of the light-emitting element 20 to the wiring portion 12 of the wiring board 10, and also secures the second electrode 31 of the protection element 30 to the wiring portion 12 of the wiring board 10. For example, the first covering member 41 can cover the entire light-emitting element 20 and the entire protection element 30. That is, the first covering member 41 covers the first element substrate 23 of the light-emitting element 20 and the second element substrate 33 of the protection element 30. The first covering member 41 may be disposed between the wiring board 10 and the light-emitting element 20, and between the wiring board 10 and the protection element 30.

[0022] In the step of disposing the first covering member 41, uncured resin that constitutes the first covering member 41 is disposed on the wiring substrate 10. The uncured resin that constitutes the first covering member 41 can be disposed by, for example, potting, spraying, printing, transfer molding, injection molding, compression molding, or the like. The resin is then cured to form the first covering member 41. It is preferable that the hardened first covering member 41 has a lower hardness than the first element substrate 23 and the second element substrate 33. This makes it possible to remove the first covering member 41 together with the light emitting elements 20 and the protective elements 30 in the first removal step described below, and reduces cracking and chipping of the light emitting elements 20 and / or the protective elements 30.

[0023] (1st removal process) Next, as shown in FIG. 3 , at least a portion of the first element substrate 23 of the light-emitting element 20 and at least a portion of the second element substrate 33 of the protective element 30 are removed from the structure 100. Methods for removal include known methods such as grinding, cutting, etching, and blasting. Among these, grinding is particularly preferred. In this embodiment, the structure 100 is ground from the surface opposite the wiring substrate 10, i.e., the top surface of the first covering member 41, thereby simultaneously removing a portion of the first element substrate 23, a portion of the second element substrate 33, and a portion of the first covering member 41. This allows the top surfaces of the first element substrate 23, the second element substrate 33, and the first covering member 41 exposed by grinding to be flush with each other. This also reduces height variations in the light-emitting element 20 and the protective element 30 among the manufactured light-emitting devices.

[0024] As a result, in the structure 100 on which the first covering member is disposed, the first element substrate 23, the second element substrate 33, and the first covering member 41 are ground from the upper surface side, and a new upper surface 23a of the first element substrate 23 and a new upper surface 33a of the second element substrate 33 are exposed from the first covering member 41. The upper surfaces 23a and 33a of the structure 100 after grinding and the upper surface 41a of the first covering member are located on the same imaginary plane 90. At this time, the first semiconductor layer 22 and the first electrode 21 of the light emitting element 20, and the second semiconductor layer 32 and the second electrode 31 of the protection element 30 are not removed by grinding and remain in the structure 100. The thicknesses of the light emitting element 20, the protection element 30, and the first covering member 41 after grinding are, for example, 20 μm or more and 80 μm or less, e.g., approximately 60 μm.

[0025] (Step of placing the light-transmitting member 50) Next, as shown in FIG. 4, a light-transmitting member 50 is disposed on the light-emitting element 20 of the structure 100. The light-transmitting member 50 is a plate-shaped member having an upper surface 50a, a lower surface 50b opposite the upper surface 50a, and a side surface 50c between the upper surface 50a and the lower surface 50b. The light-transmitting member 50 is disposed on the light-emitting element 20 so that the lower surface 50b of the light-transmitting member 50 faces the upper surface 20a of the light-emitting element 20 (here, the upper surface 23a of the first element substrate 23). For example, the light-transmitting member 50 can be adhered to the upper surface 23a of the first element substrate 23 of the light-emitting element 20 by an adhesive layer 51. The adhesive layer 51 is light-transmitting. The light-transmitting member 50 may be directly bonded to the light-emitting element 20 without the adhesive layer 51.

[0026] The area of ​​the lower surface 50b of the light-transmitting member 50 may be the same as the area of ​​the upper surface 20a of the light-emitting element 20, or may be larger or smaller than the area of ​​the upper surface 20a of the light-emitting element 20. In particular, the area of ​​the lower surface 50b of the light-transmitting member 50 is preferably equal to or larger than the area of ​​the upper surface 20a of the light-emitting element 20, and more preferably equal to the area of ​​the upper surface 20a of the light-emitting element 20.

[0027] In a plan view, the entire upper surface 20a of the light-emitting element 20 is disposed facing the lower surface 50b of the light-transmitting member 50, which allows more light emitted from the light-emitting element 20 to be incident on the lower surface 50b of the light-transmitting member 50. Furthermore, the entire lower surface 50b of the light-transmitting member 50 is disposed facing the upper surface 20a of the light-emitting element 20, which allows the light emitted from the upper surface 20a of the light-emitting element 20 to be incident perpendicularly on the lower surface 50b of the light-transmitting member 50. This makes it possible to reduce unevenness in luminance and chromaticity on the upper surface 50a, which is the light extraction surface of the light-transmitting member 50.

[0028] When the light-transmitting member 50 is disposed on the light-emitting element 20 via the adhesive layer 51, the adhesive layer 51 is disposed at least in a region where the lower surface 50b of the light-transmitting member 50 faces the upper surface 20a of the light-emitting element 20. Furthermore, the adhesive layer 51 preferably covers the entire upper surface 20a of the light-emitting element 20 and the lower surface 50b of the light-transmitting member 50 in a plan view. This allows more light emitted from the light-emitting element 20 to be incident on the lower surface 50b of the light-transmitting member 50 via the adhesive layer 51.

[0029] The light-transmitting member 50 includes, for example, a phosphor. The phosphor absorbs the light emitted from the light-emitting element 20 and emits light of a different wavelength. In this embodiment, the light-transmitting member 50 is a plate-shaped ceramic containing the phosphor, for example, a sintered body of YAG (Yttrium Aluminum Garnet) phosphor and aluminum oxide (Al2O3). However, as will be described later, the configuration of the light-transmitting member 50 is not limited to this.

[0030] (Step of placing the second covering member 42) Next, as shown in FIG. 5 , a second covering member 42 is disposed on the first covering member 41. The second covering member 42 can be disposed by, for example, potting, spraying, printing, or compression molding using a mold. The second covering member 42 covers the upper surface 30a of the protection element 30 and the side surface 50c of the light-transmitting member 50, leaving the upper surface 50a of the light-transmitting member 50 exposed. The second covering member 42 is, for example, a resin material, including, for example, a silicone resin. The second covering member 42 covers the side surface 50c of the light-transmitting member 50, which constitutes the light-emitting surface of the light-emitting device 1. For this reason, it is preferable that the second covering member 42 have a higher reflectance of light emitted from the light-emitting element 20 than the first covering member 41. This reduces leakage of light emitted from the light-emitting element 20 from the upper surface of the second covering member 42.

[0031] Next, the wiring substrate 10 and the covering member 40 are separated into individual sets each including one light emitting element 20 and one protection element 30. In this manner, the light emitting device 1 according to this embodiment is manufactured. In the light emitting device 1, the first covering member 41 and the second covering member 42 constitute the covering member 40 of the light emitting device 1. Note that the light emitting device 1 may not necessarily be provided with the second covering member 42.

[0032] (Light-emitting device 1) Next, the configuration of the light emitting device 1 will be described. As shown in FIGS. 5 and 6, the light emitting device 1 includes a wiring substrate 10, a light emitting element 20, a protective element 30, a covering member 40, and a light-transmitting member 50. The light emitting element 20, the protective element 30, and the covering member 40 are all disposed on the wiring substrate 10. The light-transmitting member 50 is disposed on the light emitting element 20. The covering member 40 exposes the upper surface 50a of the light-transmitting member 50 and covers the side surface 20b of the light emitting element 20 and the upper surface 30a and side surface 30b of the protective element 30. The upper surface 20a of the light emitting element 20 and the upper surface 30a of the protective element 30 are located in the same plane 90. In this specification, the term "coplanar" means that a difference between the surfaces is allowed within ±15 μm.

[0033] The wiring substrate 10 has an insulating base 11 and a conductive wiring portion 12. The wiring portion 12 is disposed on at least the upper surface 10a of the wiring substrate 10. The wiring portion 12 may form an anode pad and a cathode pad on the upper surface 10a or the lower surface 10b of the wiring substrate 10, which serve as external connection terminals to be connected to the outside of the light emitting device 1.

[0034] The light-emitting element 20 has a pair of first electrodes 21, a first semiconductor layer 22, and a first element substrate 23. The first electrodes 21 are connected to the wiring portion 12 of the wiring substrate 10. The first semiconductor layer 22 includes, for example, a gallium nitride semiconductor. In the first semiconductor layer 22, a p-type semiconductor layer 26, an active layer 25, and an n-type semiconductor layer 24 are provided in this order from the wiring substrate 10 side. The p-type semiconductor layer 26 and the n-type semiconductor layer 24 are connected to first electrodes 21 of opposite polarities. The first element substrate 23 is light-transmitting. The first element substrate 23 is, for example, a sapphire substrate. The lower surface of the first element substrate 23 is in contact with the n-type semiconductor layer 24. The upper surface 23a of the first element substrate 23 constitutes the upper surface 20a of the light-emitting element 20.

[0035] In the light emitting device 1, the thickness of the light emitting element 20 is, for example, not less than 20 μm and not more than 80 μm, e.g., about 60 μm. Of these, the thickness of the first semiconductor layer 22 is, for example, about 8 to 10 μm, and the thickness of the first electrode 21 is about 10 μm. By thinning the light emitting element 20, it is possible to reduce the amount of light that is emitted laterally from the side surface of the light emitting element 20, passes through the covering member 40, and leaks outside the light emitting device 1.

[0036] In the first semiconductor layer 22, the active layer 25 may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The first semiconductor layer 22 includes multiple semiconductor layers made of nitride semiconductors. The nitride semiconductors are In x Al y Ga 1-x-y This includes semiconductors of all compositions in which the composition ratios x and y in the chemical formula N (0≦x, 0≦y, x+y≦1) are varied within the respective ranges. The emission peak wavelength of the active layer can be appropriately selected depending on the purpose. The active layer is configured to be able to emit, for example, visible light or ultraviolet light.

[0037] The first semiconductor layer 22 may include multiple light-emitting sections, each including an n-type semiconductor layer 24, an active layer 25, and a p-type semiconductor layer 26. When the first semiconductor layer 22 includes multiple light-emitting sections, each light-emitting section may include well layers with different emission peak wavelengths or well layers with the same emission peak wavelength. The same emission peak wavelength also includes cases where the emission peak wavelengths vary by a few nanometers. The combination of emission peak wavelengths of the multiple light-emitting sections can be appropriately selected. For example, when the first semiconductor layer includes two light-emitting sections, the combination of light emitted by each light-emitting section may be blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light. For example, when the semiconductor structure includes three light-emitting sections, the combination of light emitted by each light-emitting section may be blue light, green light, and red light. Each light-emitting section may include one or more well layers with emission peak wavelengths different from those of the other well layers.

[0038] The light emitting device 1 includes a protective element 30. Examples of the protective element 30 include a Zener diode, a varistor, and a capacitor. By including the protective element 30, the light emitting device 1 can short-circuit a reverse voltage applied to the light emitting element 20 and can short-circuit an excessive forward voltage applied to the light emitting element 20. The protective element 30 is, for example, a bare chip Zener diode. From the viewpoint of protecting the light emitting element 20 from excessive voltage, the Zener voltage is preferably in the range of approximately 16 to 40 V.

[0039] The protection element 30 has a pair of second electrodes 31, a second semiconductor layer 32, and a second element substrate 33. The second electrodes 31 are connected to the wiring portion 12 of the wiring substrate 10. The second element substrate 33 is, for example, a semiconductor substrate. The semiconductor substrate may be an intrinsic semiconductor that does not substantially contain impurities, or may be a p-type or n-type semiconductor substrate doped with p-type impurities or n-type impurities. For example, the second element substrate 33 is a p-type silicon semiconductor substrate.

[0040] The second semiconductor layer 32 is, for example, a silicon semiconductor, and includes, for example, a base material layer 34 having a p-type conductivity, and a first semiconductor region 35 and a second semiconductor region 36 that are spaced apart from each other in the base material layer 34. The conductivity type of the first semiconductor region 35 is p + The conductivity type of the second semiconductor region 36 is n + The first semiconductor region 35 and the second semiconductor region 36 are connected to second electrodes 31 having opposite polarities. The lower surface of the second element substrate 33 is in contact with the base material layer 34. The upper surface 33a of the second element substrate 33 forms the upper surface 30a of the protection element 30. The thickness of the second semiconductor layer 32 is, for example, about 20 μm.

[0041] In the protection element 30, the base material layer 34 of the second semiconductor layer 32 and the second element substrate 33 may be made of different materials or the same material. When the base material layer 34 of the second semiconductor layer 32 and the second element substrate 33 are made of the same material (for example, both are silicon semiconductors), there may be no clear boundary between the second element substrate 33 and the second semiconductor layer. Even if there is a boundary, it may be difficult to visually recognize it. In the drawings, the boundary between the second element substrate 33 and the second semiconductor layer 32 is indicated by a dashed line.

[0042] In the light emitting device 1, the protective element 30 has a thickness of, for example, about 60 μm. Among these, the second element substrate 33 has a thickness of, for example, about 30 μm, the second semiconductor layer 32 has a thickness of, for example, about 20 μm, and the second electrode 31 has a thickness of, for example, about 10 μm.

[0043] The covering member 40 is disposed on the wiring substrate 10, exposes the upper surface 50a of the light-transmitting member 50, and covers the side surface 20b of the light-emitting element 20 and the side surface 30b of the protection element 30. The upper surface 30a of the protection element 30 may be exposed from the covering member 40 or may be covered by the covering member 40. When the second element substrate 33 is a semiconductor substrate, it is preferable that the upper surface 30a of the protection element 30 is covered by the covering member 40. It is preferable that an insulating material is used for the covering member 40. It is also preferable that the covering member 40 has light-blocking properties, and it is more preferable that the covering member 40 has light-reflecting properties. The covering member 40 is, for example, a member made of a light-transmitting resin containing particles of a light-reflecting substance or the like.

[0044] Examples of resins used for the covering member 40 include silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, polyester resin, polyimide resin, and modified polyimide resin. Among these, it is preferable to use a thermosetting resin with excellent heat resistance, and for example, a silicone resin with excellent weather resistance can be suitably used. Examples of light-reflecting materials include titanium oxide, zirconium oxide, boron nitride, and aluminum oxide. The covering member 40 may be composed of an organic material such as a resin, an inorganic material, or both an organic material and an inorganic material. For example, the covering member 40 may be composed of an inorganic material including boron nitride or an alkali metal silicate.

[0045] The light emitting device 1 can have a first covering member 41 and a second covering member 42 as the covering member 40. The first covering member 41 contacts the wiring board 10 and covers the side surface 20b of the light emitting element 20 and the side surface 30b of the protection element 30. The upper surface 41a of the first covering member 41 is located within the plane 90. The second covering member 42 is disposed on the first covering member 41. The second covering member 42 covers the upper surface 30a of the protection element 30 and the side surface 50c of the light-transmitting member 50. It is preferable that the second covering member 42 has a higher reflectance of light emitted from the light emitting element 20 than the first covering member 41.

[0046] The surface roughness (Sa) of the upper surface 30a of the protective element 30 is preferably larger than the surface roughness (Sa) of the upper surface 20a of the light-emitting element 20. This improves the adhesion between the protective element 30 and the second covering member 42. Furthermore, the surface roughness (Sa) of the upper surface 41a of the first covering member 41 is preferably larger than the surface roughness (Sa) of the upper surface 20a of the light-emitting element 20 and the surface roughness (Sa) of the upper surface 30a of the protective element 30. This improves the adhesion between the first covering member 41 and the second covering member 42.

[0047] The light-transmitting member 50 is disposed on the light-emitting element 20 and transmits light emitted from the light-emitting element 20 to emit it to the outside. The light-transmitting member 50 is bonded to the first element substrate 23 of the light-emitting element 20 via a light-transmitting adhesive layer 51, for example.

[0048] The light-transmitting member 50 may be formed from any of inorganic materials such as ceramics such as aluminum nitride, aluminum oxide, yttrium oxide, yttrium aluminum perovskite (YAlO3:YAP), glass, sapphire, etc., or organic materials such as resins or hybrid resins containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, phenolic resin, and fluororesin.

[0049] The light-transmitting member 50 may contain a phosphor capable of converting at least a portion of the light emitted by the light-emitting element 20 into light of a different wavelength. Examples of the light-transmitting member 50 containing a phosphor include a sintered body of a phosphor and a light-transmitting base material such as resin, glass, or ceramic containing phosphor powder. The phosphor sintered body may be formed by sintering only the phosphor, or may be formed by sintering a mixture of the phosphor and a substance other than the phosphor (for example, a light-diffusing substance or a sintering aid). The light-transmitting member 50 may also be formed by disposing a phosphor layer on the surface of a light-transmitting base material such as resin, glass, or ceramic.

[0050] The phosphor is an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12:(Ce), lutetium-aluminum-garnet-based phosphor (e.g., Lu3(Al,Ga)5O 12 :(Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb3(Al,Ga)5O 12 :(Ce), CCA-based phosphor (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphor (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphor (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphor (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphor (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphor (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride-based phosphors, LSN-based phosphor (e.g., (La,Y)3Si6N 11 :Ce), BSESN-based phosphor (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphor (e.g., SrLiAl3N4:Eu), CASN-based phosphor (e.g., CaAlSiN3:Eu) or SCASN-based phosphor (e.g., (Sr,Ca)AlSiN3:Eu) and other nitride-based phosphors, KSF-based phosphor (e.g., K2SiF6:Mn), KSAF-based phosphor (e.g., K2(Si 1-x Al x )F 6-x :Mn Here, x satisfies 0 < x < 1.) or MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn) and other fluoride-based phosphors, quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 Here, FA and MA represent formamidinium and methylammonium, respectively.), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) etc. can be used.

[0051] The light-transmitting member 50 may contain a filler such as a light-diffusing material. Examples of light-diffusing materials include titanium oxide, barium titanate, aluminum oxide, YAP (yttrium aluminum perovskite), and silicon oxide. However, the light-diffusing material is not limited to these. The light-transmitting member 50 may have an optical film such as an anti-reflection film on the upper surface, or an optical film such as a reflective film on the side surface. The light-emitting device 1 may have a light-transmitting adhesive layer 51 made of silicone resin or the like between the light-transmitting member 50 and the light-emitting element 20.

[0052] When an external voltage is applied via the anode pad and cathode pad of the light-emitting device 1, a DC voltage is applied between the p-type semiconductor layer 26 and the n-type semiconductor layer 24 of the first semiconductor layer 22 via the pair of first electrodes 21 of the light-emitting element 20, causing the active layer 25 to emit, for example, blue light. The blue light emitted from the active layer 25 passes through the n-type semiconductor layer 24, the first element substrate 23, and the adhesive layer 51 and enters the light-transmitting member 50. The light-transmitting member 50 contains, for example, a phosphor that absorbs a portion of the incident blue light and emits yellow light. This allows the light-emitting device 1 to emit white light, a mixture of blue and yellow light, from the light-transmitting member 50. Furthermore, when a reverse surge current flows into the light-emitting device 1 due to static electricity or the like, the protective element 30 passes the surge current, thereby protecting the light-emitting element 20 from the surge current.

[0053] (effect) In this embodiment, in the step of removing the first element substrate 23 and the second element substrate 33 from the structure 100 shown in FIG. 3 (hereinafter also referred to as the "removing step"), a portion of the first element substrate 23 of the light emitting element 20 and a portion of the second element substrate 33 of the protection element 30 are removed. This allows the thickness of the light emitting element 20 (specifically, the thickness of the first element substrate 23) to be reduced. This reduces the amount of light emitted from the first semiconductor layer 22 that is emitted laterally from the side surfaces of the first element substrate 23. As a result, the light extraction efficiency of the light emitting device 1 is improved. Furthermore, the thickness of the protection element 30 (specifically, the thickness of the second element substrate 33) can also be reduced, which reduces absorption of light emitted from the light emitting element 20 by the protection element 30. This also improves the light extraction efficiency of the light emitting device 1.

[0054] Furthermore, in this embodiment, the light emitting element 20 and the protective element 30 are placed on the wiring substrate 10 in the process of preparing the structure before the light emitting element 20 and the protective element 30 are thinned in the removal process. This makes it easy to handle the light emitting element 20 and the protective element 30 in the process of placing them on the wiring substrate 10. In this embodiment, the thickness of the light emitting element 20 and the protective element 30 after portions are removed in the removal process is, for example, about 60 μm. If an attempt were made to place the light emitting element 20 and the protective element 30 that have been processed to this thickness on the wiring substrate 10, the light emitting element 20 and the protective element 30 may be damaged by stress during placement.

[0055] Furthermore, in this embodiment, in the step of arranging the first covering member, the first covering member 41 is arranged on the wiring substrate 10. As a result, in the removal step, the light emitting element 20 and the protection element 30 are fixed to the wiring substrate 10, making grinding easy.

[0056] Furthermore, in this embodiment, in the step of arranging the first covering member 41, the first covering member 41 only needs to cover at least the side surfaces of the first electrodes 21 of the light-emitting elements 20 and the wiring portion 12 of the wiring substrate 10, and the side surfaces of the second electrodes 31 of the protection elements 30 and the wiring portion 12 of the wiring substrate 10. This reduces peeling of the light-emitting elements 20 and the protection elements 30 from the wiring substrate 10 in the removal step. Note that at this time, if each first electrode 21 of the light-emitting elements 20 and / or each second electrode 31 of the protection elements 30 is connected to the wiring portion 12 of the wiring substrate 10 via a bonding member, the first covering member 41 covers the side surfaces of the bonding member.

[0057] Furthermore, in the step of arranging the first covering member 41, it is preferable that the first covering member 41 covers the side surfaces of the light emitting element 20 and the protective element 30, and it is more preferable that the first covering member 41 collectively covers the top surfaces of the light emitting element 20 and the protective element 30, as shown in Fig. 2. This can reduce damage such as cracking and chipping of the light emitting element 20 and / or the protective element 30 in the first removal step.

[0058] Furthermore, in this embodiment, in the removal step, only a portion of the second element substrate 33 of the protection element 30 is removed, leaving the entire second semiconductor layer 32. This allows the Zener voltage of the protection element 30 to be maintained.

[0059] Furthermore, in this embodiment, in the step of arranging the second covering member, the second covering member 42 is arranged on the first covering member 41, covering the side surface 50c of the light-transmitting member 50 and exposing the upper surface 50a of the light-transmitting member 50. This allows light emitted from the side surface 50c of the light-transmitting member 50 to be reflected by the second covering member 42 toward the light-transmitting member 50 and emitted from the upper surface 50a of the light-transmitting member 50. As a result, the light extraction efficiency is improved. By making the reflectance of the light emitted from the light-emitting element 20 at the second covering member 42 higher than the reflectance of the light emitted from the light-emitting element 20 at the first covering member 41, the light extraction efficiency is further improved.

[0060] Furthermore, in this embodiment, in the removal step, the structure 100 is ground from the surface opposite the wiring substrate 10, thereby removing a portion of the first element substrate 23, a portion of the second element substrate 33, and a portion of the first covering member 41. This allows the upper surface 23a of the first element substrate 23, the upper surface 33a of the second element substrate 33, and the upper surface 41a of the first covering member 41 to be positioned within the same plane 90. As a result, absorption by the protection element 30 of light emitted from the upper surfaces of the light-emitting elements 20 of the light-emitting device 1 is reduced, resulting in a light-emitting device with high light extraction efficiency. Furthermore, the light-emitting device 1 can be made smaller.

[0061] <Second embodiment> This embodiment differs from the first embodiment in that, after the first removal step, the remaining portion of the first covering member 41 is removed and a new covering member is placed. Here, for example, a thermoplastic polyimide resin is used as the first covering member 41. 7 and 8 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment. FIG. 9 is a cross-sectional view showing a light emitting device according to this embodiment. First, as shown in FIGS. 1 to 3, a step of preparing a structure, a step of arranging a first covering member, and a first removing step are carried out.

[0062] (Second removal process) 7, the remaining portion of the first covering member 41 is removed, leaving the wiring substrate 10, the light emitting element 20, and the protective element 30. For example, only the first covering member 41 is removed by dissolving it using an organic solvent such as cyclopentanone.

[0063] (Step of placing the light-transmitting member 50) 8, the light-transmitting member 50 is disposed on the light-emitting element 20. The light-transmitting member 50 is adhered to the upper surface 23a of the first element substrate 23 of the light-emitting element 20 via an adhesive layer 51, for example.

[0064] (Step of placing the second covering member 42) Next, as shown in FIG. 9 , a second covering member 42 is disposed on the wiring substrate 10. The second covering member 42 can be disposed by, for example, potting, spraying, printing, transfer molding, injection molding, compression molding, or the like. The second covering member 42 covers the upper surface 30a and side surface 30b of the protection element 30, the side surface 20b of the light-emitting element 20, and the side surface 50c of the light-transmitting member 50, leaving the upper surface 50a of the light-transmitting member 50 exposed. The second covering member 42 may penetrate between the wiring substrate 10 and the light-emitting element 20 and between the wiring substrate 10 and the protection element 30. The second covering member 42 may be formed of, for example, a resin material, such as a white resin material, e.g., a silicone resin containing light-reflective particles. The second covering member 42 may be formed as a single layer or multiple layers.

[0065] Furthermore, the second embodiment may include a step of arranging an underfill on the lower surface of the light emitting element 20 and the upper surface of the wiring substrate 10 after the second removal step and before the step of arranging the second covering member 42. The underfill may be made of the same resin material as the second covering member 42.

[0066] Next, the wiring substrate 10 and the second covering member 42 are separated into individual sets each including one light emitting element 20 and one protection element 30. In this manner, the light emitting device 2 according to this embodiment is manufactured.

[0067] (Light-emitting device 2) 9, the light emitting device 2 according to this embodiment includes a light emitting element 20 and a protective element 30 arranged on a wiring substrate 10, and the upper surface of the light emitting element 20 and the upper surface of the protective element 30 are located in the same plane. The light emitting device 2 differs from the light emitting device 1 shown in FIG. 5 in that it does not include a first covering member 41 located in the same plane as the upper surfaces of the light emitting element 20 and the protective element 30. In the light emitting device 2, the covering member 40 is composed of only a second covering member 42.

[0068] (effect) According to this embodiment, the light emitting element 20, the protective element 30, and the first covering member 41 are ground in the process shown in FIG. 3 , and then the remaining portion of the first covering member 41 is removed in the process shown in FIG. 7 . Then, the second covering member 42 is disposed in the process shown in FIG. 9 . As a result, the first covering member 41 does not remain in the manufactured light emitting device 2, and the material of the first covering member 41 can be selected based solely on its ability to secure the light emitting element 20 and the protective element 30 to the wiring substrate 10. For example, a resin material with high hardness, specifically a polyimide resin, can be used as the material for the first covering member 41. Meanwhile, for the second covering member 42, a material that emphasizes light reflectance and heat resistance, such as a white resin material, such as a silicone resin, can be used, as in the first embodiment. In this way, optimal materials can be selected for the first covering member 41 and the second covering member 42.

[0069] In this embodiment as well, it is preferable that the second covering member 42 is made of a material that has a high reflectance for light emitted from the light emitting element 20. Other than the above, the manufacturing method, configuration, and effects of this embodiment are the same as those of the first embodiment.

[0070] <Third embodiment> This embodiment differs from the first embodiment in the configuration of the light-transmitting member. FIG. 10 is a cross-sectional view showing the light emitting device according to this embodiment.

[0071] As shown in FIG. 10 , in the light emitting device 3 according to this embodiment, a light-transmitting member 52 is provided instead of the light-transmitting member 50. The light-transmitting member 52 has a resin layer 53 and a glass layer 54. The glass layer 54 is disposed on the resin layer 53. In the resin layer 53, a phosphor 56 and / or a light diffusing material 57 is disposed in a base material 55 made of a resin material such as silicone. Note that at least one of the phosphor 56 and the light diffusing material 57 does not necessarily have to be disposed. The glass layer 54 may be formed of a light-transmitting material other than glass (for example, a resin or a ceramic).

[0072] According to this embodiment, it is possible to emit light of a desired color by adjusting the type of phosphor 56 and / or light diffusing material 57 contained in the resin layer 53. Furthermore, when manufacturing light emitting devices that emit light of different colors, the thickness of the resin layer 53 required to emit the respective desired colors may be changed. However, according to this embodiment, it is possible to manufacture light emitting devices of the same size that emit different light colors by adjusting the thickness ratio between the resin layer 53 and the glass layer 54 in the light-transmitting member 52. Furthermore, because the phosphor 56 is not exposed to the outside of the light emitting device 3, deterioration of the phosphor 56 due to moisture in the atmosphere can be reduced. As a result, the reliability of the light emitting device 3 is improved. The manufacturing method, configuration, and effects of this embodiment other than those described above are the same as those of the first embodiment.

[0073] <Fourth embodiment> This embodiment differs from the first embodiment in that the first element substrate and the second element substrate are not left behind. FIG. 11 is a cross-sectional view showing a method for manufacturing a light emitting device according to this embodiment. FIG. 12 is a cross-sectional view showing a light emitting device according to this embodiment.

[0074] First, the steps shown in FIGS. 1 and 2 are carried out. 11, the structure 100 is ground from the surface opposite to the wiring substrate 10. At this time, the first element substrate 23 of the light emitting element 20 is entirely removed, and part of the n-type semiconductor layer 24 of the first semiconductor layer 22 is also removed. Furthermore, the second element substrate 33 of the protection element 30 is entirely removed, and part of the base material layer 34 of the second semiconductor layer 32 is also removed. Next, steps similar to those shown in FIGS. 4 and 5 are carried out. In this way, the light emitting device 4 according to this embodiment is manufactured, as shown in Fig. 12. In the light emitting device 4, the light emitting element 20, the protective element 30, and the first covering member 41 each have a thickness of, for example, about 20 µm.

[0075] As shown in FIG. 12, the light emitting device 4 differs from the light emitting device 1 according to the first embodiment in that the first element substrate 23 and the second element substrate 33 are not provided, and the n-type semiconductor layer 24 and the base material layer 34 are thin. This reduces absorption of light emitted from the active layer 25 by the n-type semiconductor layer 24, and prevents absorption by the first element substrate 23. Furthermore, light emitted from the active layer 25 is also prevented from being absorbed by the second element substrate 33. As a result, the light extraction efficiency is further improved. Furthermore, the light emitting device 4 can be made even more compact. The manufacturing method, configuration, and effects of this embodiment other than those described above are the same as those of the first embodiment.

[0076] <Fifth embodiment> This embodiment is an example in which a plurality of pairs of light emitting elements and protective elements are provided in one light emitting device. FIG. 13 is a perspective view showing a light emitting device according to this embodiment. FIG. 14 is a cross-sectional view taken along line XIV-XIV shown in FIG. FIG. 15 is a cross-sectional view taken along line XV-XV shown in FIG.

[0077] 13 to 15, in the light emitting device 5 according to this embodiment, a plurality of pairs of light emitting elements 20 and protective elements 30 are provided on one wiring substrate 10. In addition, a plurality of pads 13 serving as external connection terminals of the light emitting device 5 are provided on an upper surface 10a of the wiring substrate 10.

[0078] In the light emitting device 5, a plurality of light emitting elements 20 are arranged in a row, for example, periodically. In this embodiment, the arrangement direction of the light emitting elements 20 is referred to as the "X direction." Furthermore, the direction parallel to the upper surface 10a and perpendicular to the X direction is referred to as the "Y direction," and the direction perpendicular to the upper surface 10a is referred to as the "Z direction."

[0079] In the light emitting device 5, a plurality of protective elements 30 are also arranged in a line along the X direction, for example, periodically. The number of protective elements 30 is the same as the number of light emitting elements 20. A plurality of pads 13 are also arranged in a line along the X direction, for example, periodically. The number of pads 13 is one more than the number of light emitting elements 20. In other words, when the number of light emitting elements 20 is n, the number of protective elements 30 is n and the number of pads 13 is (n+1). In the examples shown in FIGS. 13 to 15, n is 12.

[0080] In one example, (n+1) pads 13 arranged in a row connect n light-emitting elements 20 in series. The light-emitting device 5 can drive each light-emitting element 20 individually using each of the (n+1) pads 13 as an external connection terminal. Furthermore, each protection element 30 is connected to each light-emitting element 20 in a one-to-one relationship. In the Y direction, the row of protection elements 30 is located between the row of light-emitting elements 20 and the row of pads 13.

[0081] As in the first embodiment, the light-emitting element 20 includes a first element substrate 23. The first element substrate 23 is, for example, a sapphire substrate, and the cleavability of sapphire can be utilized during singulation. Therefore, the singulated light-emitting element 20 may include a side surface of the first element substrate 23 that is not perpendicular to the upper surface 23a due to the cleavability of the first element substrate 23. When the side surface of the first element substrate 23 is not perpendicular to the upper surface 23a, for example, the shape of the first element substrate 23 viewed from the Y direction may become a parallelogram rather than a rectangle, and the position of the lower surface and the position of the upper surface 23a of the first element substrate 23 may be misaligned in the X direction. This misalignment may cause variations in the distance between adjacent light-emitting elements 20 in a light-emitting device 5 including multiple light-emitting elements 20.

[0082] 3, the first element substrate 23 is thinned, and therefore the amount of deviation in the X direction between the lower surface and the upper surface 23a of the first element substrate 23 is reduced. As a result, the deviation in the distance between adjacent light-emitting elements 20 can be reduced.

[0083] The light emitting device 5 can be used, for example, as a light source for an automobile headlamp. By independently controlling the multiple light emitting elements 20, for example, an ADB (Adaptive Driving Beam: a variable light distribution headlamp) can be realized. The manufacturing method, configuration, and effects of this embodiment other than those described above are the same as those of the first embodiment.

[0084] <Test example> Next, we will explain a test example in which the appearance of the upper surface 20a of the light-emitting element 20, the upper surface 30a of the protective element 30, and the upper surface 41a of the first covering member 41 was observed and the roughness was measured in the manufacturing method of the light-emitting device according to the first embodiment described above.

[0085] In this test example, multiple samples were prepared, and the steps of preparing the structure 100 shown in FIG. 1, disposing the first covering member 41 shown in FIG. 2, and the first removing step shown in FIG. 3 were carried out. In the structure 100, the first support substrate was a sapphire substrate, and the second support substrate was a silicon substrate. In the disposing step, a silicone resin containing titanium oxide was disposed as the first covering member. In the first removing step, the upper surface of each sample was ground using a grinding wheel containing diamond abrasive grains and having a grit size of 6000, which is capable of grinding sapphire. As a result, the upper surface 20a of the light-emitting element 20, the upper surface 30a of the protection element 30, and the upper surface 41a of the first covering member 41 were simultaneously ground. The surfaces of the ground samples were then observed using an optical microscope.

[0086] 16A and 16B and 17A to 17C are micrographs showing the appearance of the light emitting element, the protective element, and the first covering member after they have been ground. 16A and 16B were photographed using a surface roughness measuring device VK-3100 manufactured by Keyence Corporation while irradiating the surface with laser light used for roughness measurement. 17A to 17C were photographed using a Keyence VHX-8000 digital microscope, with light irradiated from a coaxial light source, in which the optical axis of the camera lens and the optical axis of the illumination light were approximately on the same axis.

[0087] Figures 16A and 16B, and 17A to 17C are photographs of different samples. In addition, in Figures 16A and 16B, and 17A to 17C, the direction of the grinding marks resulting from grinding is represented by three line segments. As shown in FIGS. 16A and 16B and 17A to 17C, grinding marks extending in the same direction were formed on the upper surface 20a of the light emitting element 20 and the upper surface 30a of the protection element 30.

[0088] FIG. 18 is a table showing the measurement results of the surface roughness of the light emitting element, the protective element, and the first covering member. 18, the surface roughness (Sa) of the four samples was measured before and after grinding by laser light irradiation using a surface roughness measuring device VK-3100 manufactured by Keyence Corporation. As a result, in the samples after grinding, the surface roughness (Sa) of the upper surface 30a of the protection element 30 was larger and rougher than the surface roughness (Sa) of the upper surface 20a of the light-emitting element 20. Furthermore, the surface roughness (Sa) of the upper surface 41a of the first covering member 41 was larger and rougher than the surface roughness (Sa) of the upper surface 30a of the protection element 30.

[0089] Sapphire constituting upper surface 20a of light-emitting element 20 is harder than silicon constituting upper surface 30a of protective element 30, and silicon is harder than silicone resin constituting upper surface 41a of first coating member 41. For this reason, it is presumed that grinding using a grindstone with a grit size capable of grinding sapphire, the hardest material, allowed the surface roughness (Sa) to be increased for materials with lower hardness.

[0090] Figure 19 is a graph showing the surface profile of one sample, with the horizontal axis representing horizontal position and the vertical axis representing vertical position. After grinding, the surface profile of one sample was measured by irradiating it with a laser beam using a surface roughness measuring device VK-3100 manufactured by Keyence Corporation.

[0091] 19, the upper surface 30a of the protection element 30 and the upper surface 20a of the light-emitting element 20 were located in approximately the same plane. On the other hand, the upper surface 41a of the first covering member 41 was located approximately 1 μm below the upper surfaces 30a of the protection element 30 and 20a of the light-emitting element 20. This is thought to be because the first covering member 41 was softer than the protection element 30 and the light-emitting element 20 and was therefore easier to grind.

[0092] The above-described embodiments are examples of realizing the present invention, and the present invention is not limited to these embodiments. For example, the present invention also includes embodiments in which some components or steps are added, deleted, or modified in the above-described embodiments.

[0093] The present invention includes the following aspects.

[0094] (Appendix 1) a step of preparing a structure including a wiring substrate having a wiring portion on an upper surface thereof, a light-emitting element in which a pair of first electrodes, a first semiconductor layer, and a first element substrate are stacked, and a protection element in which a pair of second electrodes, a second semiconductor layer, and a second element substrate are stacked, the pair of first electrodes and the pair of second electrodes facing the upper surface of the wiring substrate and connected to the wiring portion; removing at least a portion of the first element substrate of the light emitting element and at least a portion of the second element substrate of the protection element from the structure; A method for manufacturing a light emitting device comprising:

[0095] (Appendix 2) Between the providing step and the removing step, A method for manufacturing a light-emitting device as described in Appendix 1, further comprising a step of placing a first covering member on the wiring substrate to fix the first electrode of the light-emitting element and the second electrode of the protection element to the wiring substrate.

[0096] (Appendix 3) the first covering member covers the first element substrate and the second element substrate, The method for manufacturing a light-emitting device described in Appendix 2, wherein the removing step includes a first removing step of removing at least a portion of the first element substrate, at least a portion of the second element substrate, and a portion of the first covering member from the opposite side of the wiring substrate.

[0097] (Appendix 4) 4. The method for manufacturing a light emitting device according to claim 3, wherein the removing step further includes a second removing step of removing a remaining portion of the first covering member after the first removing step.

[0098] (Appendix 5) the first semiconductor layer includes, in order from the first element substrate side, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; 5. The method for manufacturing a light emitting device according to any one of claims 1 to 4, wherein in the removing step, the first element substrate is entirely removed and at the same time a part of the n-type semiconductor layer is removed.

[0099] (Appendix 6) the second element substrate is a semiconductor substrate, the second semiconductor layer includes a first semiconductor region connected to one of the second electrodes, and a second semiconductor region spaced apart from the first semiconductor region and connected to the other of the second electrodes; 6. The method for manufacturing a light emitting device according to any one of claims 1 to 5, wherein in the removing step, a portion of the second element substrate is removed and the entire second semiconductor layer remains.

[0100] (Appendix 7) After the removing step, placing a light-transmitting member on the light-emitting element; a step of disposing a second covering member on the first covering member, the second covering member covering a side surface of the light-transmitting member and exposing an upper surface of the light-transmitting member; 4. The method for manufacturing a light-emitting device according to claim 2 or 3, further comprising:

[0101] (Appendix 8) After the removing step, placing a light-transmitting member on the light-emitting element; a step of disposing a second covering member on the wiring substrate, the second covering member covering a side surface of the protection element, a side surface of the light-emitting element, and a side surface of the light-transmitting member and exposing an upper surface of the light-transmitting member; 5. A method for manufacturing a light emitting device according to claim 4, further comprising:

[0102] (Appendix 9) 5. The method for manufacturing a light emitting device according to claim 3, wherein the first removing step includes a step of grinding the structure from a surface opposite to the wiring substrate.

[0103] (Appendix 10) A wiring board; a light-emitting element disposed on the wiring substrate; a protection element disposed on the wiring substrate; a light-transmitting member disposed on the light-emitting element; a covering member disposed on the wiring substrate, exposing an upper surface of the light-transmitting member and covering a side surface of the light-emitting element and a side surface of the protection element; Equipped with The light emitting device has an upper surface of the light emitting element and an upper surface of the protective element positioned on the same plane.

[0104] (Appendix 11) The covering member is a first covering member that covers a side surface of the light emitting element and a side surface of the protection element and has an upper surface located in the same plane; a second covering member disposed on the first covering member and covering an upper surface of the protection element and a side surface of the light-transmitting member; 11. The light-emitting device of claim 10, comprising:

[0105] (Appendix 12) 12. The light emitting device according to claim 11, wherein the second covering member has a higher reflectance of light emitted from the light emitting element than the first covering member.

[0106] (Appendix 13) 13. The light emitting device according to any one of claims 10 to 12, wherein the thickness of the light emitting element is 20 μm or more and 80 μm or less.

[0107] (Appendix 14) 14. The light emitting device according to any one of claims 10 to 13, wherein the surface roughness of the upper surface of the protective element is greater than the surface roughness of the upper surface of the light emitting element.

[0108] (Appendix 15) 15. The light emitting device according to any one of claims 10 to 14, wherein the surface roughness of the upper surface of the first covering member is greater than the surface roughness of the upper surface of the light emitting element and the surface roughness of the upper surface of the protective element. [Industrial Applicability]

[0109] The present invention can be used, for example, as a light source for a lighting device. [Explanation of symbols]

[0110] 1, 2, 3, 4, 5 Light-emitting device 10. Wiring board 10a top surface 10b Bottom side 11 Base 12 Wiring section 13 Pad 20 Light-emitting element 20a top surface 20b side 21 1st electrode 22 First semiconductor layer 23 First element substrate 23a Top side 24 n-type semiconductor layer 25 Active layer 26 p-type semiconductor layer 30 Protection element 30a top surface 30b side 31 2nd electrode 32 Second semiconductor layer 33 Second element substrate 33a Top side 34 Base material layer 35 First semiconductor region 36 Second semiconductor region 40 Covering material 41 First covering member 41a Top side 42 2nd covering member 50 Translucent materials 50a above 50b below 50c side 51 Adhesive layer 52 Translucent materials 53 resin layer 54 ガラスlayer 55 base material 56 light body 57 Light and loose materials 90 plane 100 Construct

Claims

1. a step of preparing a structure including a wiring substrate having a wiring portion on an upper surface thereof, a light-emitting element in which a pair of first electrodes, a first semiconductor layer, and a first element substrate are stacked, and a protection element in which a pair of second electrodes, a second semiconductor layer, and a second element substrate are stacked, the pair of first electrodes and the pair of second electrodes facing the upper surface of the wiring substrate and connected to the wiring portion; removing at least a portion of the first element substrate of the light emitting element and at least a portion of the second element substrate of the protection element from the structure; A method for manufacturing a light emitting device comprising:

2. Between the providing step and the removing step, 2. The method for manufacturing a light emitting device according to claim 1, further comprising the step of arranging a first covering member on the wiring substrate to fix the first electrode of the light emitting element and the second electrode of the protection element to the wiring substrate.

3. the first covering member covers the first element substrate and the second element substrate, 3. The method for manufacturing a light-emitting device according to claim 2, wherein the removing step includes a first removing step of removing at least a portion of the first element substrate, at least a portion of the second element substrate, and a portion of the first covering member from the opposite side of the wiring substrate.

4. The method for manufacturing a light emitting device according to claim 3 , wherein the removing step further comprises a second removing step of removing a remaining portion of the first covering member after the first removing step.

5. the first semiconductor layer includes, in order from the first element substrate side, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; 5. The method for manufacturing a light emitting device according to claim 1, wherein in the removing step, the first element substrate is entirely removed and at the same time, a part of the n-type semiconductor layer is removed.

6. the second element substrate is a semiconductor substrate, the second semiconductor layer includes a first semiconductor region connected to one of the second electrodes, and a second semiconductor region separated from the first semiconductor region and connected to the other of the second electrodes; 5. The method for manufacturing a light emitting device according to claim 1, wherein in the removing step, a part of the second element substrate is removed and the whole of the second semiconductor layer remains.

7. After the removing step, placing a light-transmitting member on the light-emitting element; a step of disposing a second covering member on the first covering member, the second covering member covering a side surface of the light-transmitting member and exposing an upper surface of the light-transmitting member; The method for manufacturing a light-emitting device according to claim 2 or 3, further comprising:

8. After the removing step, placing a light-transmitting member on the light-emitting element; a step of disposing a second covering member on the wiring substrate, the second covering member covering a side surface of the protection element, a side surface of the light-emitting element, and a side surface of the light-transmitting member and exposing an upper surface of the light-transmitting member; The method for manufacturing a light emitting device according to claim 4 , further comprising:

9. 5. The method for manufacturing a light emitting device according to claim 3, wherein the first removing step includes a step of grinding the structure from a surface opposite to the wiring substrate.

10. A wiring board; a light-emitting element disposed on the wiring substrate; a protection element disposed on the wiring substrate; a light-transmitting member disposed on the light-emitting element; a covering member disposed on the wiring substrate, exposing an upper surface of the light-transmitting member and covering a side surface of the light-emitting element and a side surface of the protection element; Equipped with The light emitting device has an upper surface of the light emitting element and an upper surface of the protective element positioned on the same plane.

11. The covering member is a first covering member covering a side surface of the light emitting element and a side surface of the protection element and having an upper surface located in the same plane; a second covering member disposed on the first covering member and covering an upper surface of the protection element and a side surface of the light-transmitting member; The light emitting device according to claim 10, comprising:

12. The light emitting device according to claim 11 , wherein the second covering member has a higher reflectance for light emitted from the light emitting element than the first covering member.

13. The light emitting device according to claim 10 , wherein the thickness of the light emitting element is 20 μm or more and 80 μm or less.

14. The light emitting device according to claim 10 , wherein the surface roughness of the upper surface of the protective element is greater than the surface roughness of the upper surface of the light emitting element.

15. The light emitting device according to claim 10 , wherein the surface roughness of the upper surface of the first covering member is greater than the surface roughness of the upper surface of the light emitting element and the surface roughness of the upper surface of the protective element.

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