Photoelectric conversion element, photoelectric conversion module and photoelectric conversion system

Abstract

To provide a photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system capable of improving the adhesion between a sealing layer and other contact layers.SOLUTION: A photoelectric conversion element 10 has a lower substrate 12, a photoelectric conversion section PE provided on the lower substrate 12 and including a photoelectric conversion layer 15 containing a perovskite compound, a sealing layer 18 provided on the lower substrate 12 over the area where the photoelectric conversion section PE does not exist, and an inert layer 19 formed between the lower substrate 12 and the sealing layer 18.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a photoelectric conversion element, a photoelectric conversion module, and a photoelectric conversion system that use a perovskite compound. [Background technology]

[0002] Solar cells (perovskite solar cells) including a photoelectric conversion layer (organic active layer) using a perovskite compound have been attracting attention. Perovskite solar cells require sealing of the photoelectric conversion unit including the photoelectric conversion layer because the performance of the photoelectric conversion layer deteriorates when exposed to the outside air, moisture, etc. Patent Document 1 discloses a perovskite solar cell equipped with a barrier layer (sealing layer) that covers the photoelectric conversion element with an inorganic material. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 7016806 Summary of the Invention [Problem to be solved by the invention]

[0004] The barrier layer seals the photoelectric conversion element or the photoelectric conversion module, and is generally made of a resin material.

[0005] The sealing layer in a perovskite solar cell is formed between an upper substrate and a lower substrate, but if the adhesion to the substrate (or other contact layers between the substrates) is poor, sufficient sealing cannot be achieved, which could lead to a decrease in cell performance.

[0006] The present disclosure has been made in consideration of the above-mentioned problems, and aims to provide a photoelectric conversion element, a photoelectric conversion module, and a photoelectric conversion system that can improve adhesion between a sealing layer and other contact layers. [Means for solving the problem]

[0007] In order to solve the above problems, the following photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system are provided.

[0008] (1) Photoelectric conversion element The photoelectric conversion element according to the present disclosure is characterized by having a base, a photoelectric conversion unit provided on the base and including a photoelectric conversion layer containing a perovskite compound, a sealing layer provided on an area of ​​the base where the photoelectric conversion unit is not present, and an adhesion auxiliary layer formed between the base and the sealing layer.

[0009] While a sealing layer and an adhesion auxiliary layer are essential components of a photoelectric conversion element, it is not necessary to have one sealing layer for each photoelectric conversion unit. It is acceptable for a photoelectric conversion module (details below) having multiple photoelectric conversion units to have one sealing layer. In other words, a photoelectric conversion element refers to an element having at least a base, a photoelectric conversion unit, a sealing layer, and an adhesion auxiliary layer. Even a photoelectric conversion module having multiple photoelectric conversion units that shares a sealing layer and an adhesion auxiliary layer (e.g., the photoelectric conversion module shown in FIG. 8) can be considered a photoelectric conversion element and a photoelectric conversion module, which is one form of a photoelectric conversion element. Unless otherwise specified, "on the base" does not necessarily mean being in contact with the base and can include an area above the base. In other words, "on the base" means either an area above the base that is in contact with the base or an area above the base that is not in contact with the base. In the present disclosure, "on" also means the same thing when referring to something other than the base.

[0010] (2) Photoelectric conversion module The photoelectric conversion module of the present disclosure is characterized in that the photoelectric conversion element has a base, a photoelectric conversion unit provided on the base and including a photoelectric conversion layer containing a perovskite compound, a sealing layer provided on an area of ​​the base where the photoelectric conversion unit is not present, and an adhesion auxiliary layer formed between the base and the sealing layer, and the photoelectric conversion module has a plurality of photoelectric conversion units connected in series.

[0011] That is, a photoelectric conversion element having multiple photoelectric conversion units connected in series is called a photoelectric conversion module. In a photoelectric conversion module, multiple photoelectric conversion units can share a seal. That is, it is not necessary to seal each photoelectric conversion unit and then connect them. For example, in a photoelectric conversion module in which a certain number of photoelectric conversion units are connected, as in the photoelectric conversion module shown in FIG. 8, the certain number of photoelectric conversion units can be collectively sealed.

[0012] (3) Photoelectric conversion system A photoelectric conversion system according to the present disclosure includes the above-described photoelectric conversion module and a control circuit. [Effects of the Invention]

[0013] The photoelectric conversion element, photoelectric conversion module, and photoelectric conversion system of the present disclosure enable improved adhesion between the sealing layer and other contact layers. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element according to a first embodiment. [Figure 2] FIG. 4 is a cross-sectional view showing a modified example of the photoelectric conversion element of the first embodiment. [Figure 3] FIG. 4 is a cross-sectional view showing another modified example of the photoelectric conversion element according to the first embodiment. [Figure 4] FIG. 10 is a cross-sectional view showing yet another modified example of the photoelectric conversion element of the first embodiment. [Figure 5] FIG. 4 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element according to a second embodiment. [Figure 6] FIG. 10 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element according to a third embodiment. [Figure 7] FIG. 1 is a plan view of a photovoltaic conversion module according to the present disclosure. [Figure 8] FIG. 8 is a cross-sectional view of the photoelectric conversion module shown in FIG. [Figure 9] FIG. 8 is a circuit diagram of the photoelectric conversion module shown in FIG. [Figure 10] 1 is a schematic diagram of a photovoltaic conversion system according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0015] [First embodiment] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Fig. 1 shows an embodiment of the present disclosure and is a cross-sectional view illustrating a schematic configuration of a photoelectric conversion element 10. As shown in Figs.

[0016] As shown in FIG. 1, a photoelectric conversion element 10 has an upper substrate 11 and a lower substrate (base) 12, with a photoelectric conversion unit PE sandwiched between these substrates. The photoelectric conversion unit PE in FIG. 1 is configured by stacking a lower electrode 13, an electron transport layer 14, a photoelectric conversion layer 15, a hole transport layer 16, and an upper electrode 17 in this order (starting from the lower substrate 12 side in FIG. 1). Note that the stacking order does not necessarily have to be this order (forward structure type), and the order of the electron transport layer and the hole transport layer may be reversed (inverted structure type). That is, the hole transport side may be on the bottom and the electron transport side may be on the top. In this disclosure, the electron transport layer will be described as a forward structure type, but in the case of an inverted structure type, it may be replaced with a hole transport layer unless inconsistent.

[0017] The photoelectric conversion unit refers to the portion of the photoelectric conversion element (excluding the substrate) that includes at least a photoelectric conversion layer and may include an upper electrode and a lower electrode, and that exists in the region where the photoelectric conversion layer is present (when an upper electrode and a lower electrode are present, the overlapping region with the upper electrode and the lower electrode) when the photoelectric conversion layer is viewed in a planar view (meaning a view perpendicular to the surface of the substrate, as in the present disclosure). For example, as shown in the cross-sectional views of Figures 1 to 6, the portion outside the width of the photoelectric conversion layer, which is the width indicated by the photoelectric conversion unit PE, is not the photoelectric conversion unit. The photoelectric conversion layer refers to the portion that functions as the part responsible for the photoelectric conversion function of the photoelectric conversion element, and can be understood from its positional relationship with the components that constitute the photoelectric conversion element or photoelectric conversion module. In other words, the region without the photoelectric conversion unit can refer to the region outside the region where the photoelectric conversion layer responsible for the photoelectric conversion function of the photoelectric conversion element or photoelectric conversion module is viewed in a planar view (meaning a view perpendicular to the surface of the substrate, as in the present disclosure). The photoelectric conversion element 10 does not necessarily have to have the upper substrate 11 or the lower substrate (base) 12, and may optionally have one of them or neither if the functions of the two substrates are replaced by something else.

[0018] In this embodiment, the lower surface of the photoelectric conversion element 10 serves as the light-receiving surface, and the lower surface of the photoelectric conversion layer 15 (including the side below the photoelectric conversion layer 15, as in this disclosure) is transparent. That is, in this embodiment, the electron transport side (or negative electrode side, as in this disclosure) is transparent. For example, the lower substrate 12 serves as a transparent substrate, and the lower electrode 13 serves as a transparent electrode. The photoelectric conversion layer 15 is an active layer that converts light energy into electrical energy by absorbing light, and contains a perovskite compound. Note that the lower surface does not necessarily have to be the light-receiving surface; the upper surface may also be the light-receiving surface. In this case, the upper surface of the photoelectric conversion layer 15 (including the side above the photoelectric conversion layer 15, as in this disclosure; in this embodiment, the hole transport side) may be transparent. Alternatively, both the upper and lower surfaces may serve as light-receiving surfaces, and the lower surface of the photoelectric conversion layer 15 and the upper surface of the photoelectric conversion layer 15 are transparent.

[0019] It should be noted that transparency or light transmissivity means that light can pass through, but does not exclude those that reflect or absorb even a small amount of light, and it is sufficient if the material is provided on the light-receiving surface side of the photoelectric conversion element 10 and can transmit light appropriately, and can be considered to be synonymous with being provided on the light-receiving surface side of the photoelectric conversion element 10. Therefore, being provided at least on the light-receiving surface side of the photoelectric conversion element 10 can be considered to be transparent.

[0020] In the photoelectric conversion element 10, the photoelectric conversion unit PE is shielded from external air and moisture by the sealing layer 18. The sealing layer 18 is provided in a region between the upper substrate 11 and the lower substrate 12 where the photoelectric conversion unit PE is not present, and is formed so as to surround the periphery of the photoelectric conversion unit PE in a plan view seen along a direction perpendicular to the surfaces of the substrates. In addition, an inactive layer 19 is provided between the sealing layer 18 and the lower substrate 12. In this embodiment, among the layers forming the photoelectric conversion unit PE, the lower electrode 13 and the electron transport layer 14 extend outside the region of the photoelectric conversion unit PE and are formed on almost the entire surface of the lower substrate 12, and the inactive layer 19 is formed in contact with the electron transport layer 14. In the photoelectric conversion element 10, the inactive layer 19 functions as an adhesion auxiliary layer to improve adhesion between the sealing layer 18 and the electron transport layer 14.

[0021] The term "inactive" means that the material does not absorb light to generate electrons and holes, or at least does not generate them efficiently. For example, this is different from the perovskite compound used in the photoelectric conversion layer 15.

[0022] Furthermore, the adhesion auxiliary layer refers to a layer including an inactive layer 19 that exists in the area where the sealing layer 18 comes into close contact with another material and that assists adhesion. For example, the presence of the adhesion auxiliary layer in the area where the sealing layer 18 comes into close contact with another material may assist adhesion to the extent that the perovskite photoelectric conversion element has sufficient adhesion for commercialization. In other words, the degree of adhesion of the adhesion auxiliary layer is sufficient as long as a perovskite photoelectric conversion element having an adhesion auxiliary layer present in the area where the sealing layer 18 comes into close contact with another material can be commercialized, and confirmation of the physical properties is not required.

[0023] An example of a method for manufacturing the photoelectric conversion element 10 of this embodiment will be described below. First, a procedure for forming the photoelectric conversion section PE on the lower substrate 12 will be described.

[0024] The lower substrate 12 is also referred to as a substrate, base material, or substrate, and may be the same as or include any of these. The lower substrate 12 may be hard and highly rigid, or may be flexible and less rigid. When the lower substrate is used as the light-receiving surface, the lower substrate 12 may be made of a light-transmitting material. For example, glass may be used, or a resin film such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide. The upper substrate 17 may also be made of various materials for the lower substrate 12 described in this disclosure. However, when only the lower substrate 12 is used as the light-receiving surface, the upper substrate 17 may be hard and highly rigid, or may be flexible and less rigid; it does not need to be made of a light-transmitting material. It is also possible for both substrates to be made of light-transmitting materials, so that the photoelectric conversion element 10 itself is light-transmitting.

[0025] A lower electrode 13 is formed on the lower substrate 12. The lower electrode 13 is made of a light-transmitting conductive material, such as ITO, ZnO, FTO, SnO2, or IZO. The lower electrode 13 may be formed on the lower substrate 12 by a known method such as sputtering or vapor deposition. The thickness of the lower electrode 13 is, for example, 30 nm to 1000 nm.

[0026] An electron transport layer 14 is formed on the lower electrode 13. The electron transport layer 14 is a layer that has the function of transporting electrons generated in the photoelectric conversion layer 15. It is self-evident that the electron transport layer 14 on the negative electrode side of the photoelectric conversion layer 15 (including the negative electrode side of the photoelectric conversion layer 15, as in the present disclosure) has the function of transporting electrons as long as the photoelectric conversion element 10 functions, and no confirmation is required. In other words, as long as the photoelectric conversion element 10 functions as a photoelectric conversion element, the layer on the negative electrode side of the photoelectric conversion layer 15 is referred to as the electron transport layer. The negative electrode side can also be referred to as the electron transport side. The electron transport layer 14 can be made of tin oxide, titanium oxide, zinc oxide, or the like. The electron transport layer 14 may be formed by a known method such as spin coating or sputtering.

[0027] A photoelectric conversion layer 15 is formed on the electron transport layer 14. The photoelectric conversion layer is a layer that converts light into electricity. For example, a perovskite compound can be used as the photoelectric conversion layer 15. The photoelectric conversion layer 15 may be formed by a known film formation method such as spin coating, die coating, or inkjet printing. The thickness of the photoelectric conversion layer 15 is, for example, 100 nm to 1000 nm. As long as the photoelectric conversion element 10 has a photoelectric conversion function, it is a natural consequence that the photoelectric conversion layer 15 is present in the photoelectric conversion element 10. Therefore, as long as the photoelectric conversion element 10 has a photoelectric conversion function, there is no need to confirm the photoelectric conversion function of the layer itself to confirm the presence of the photoelectric conversion layer 15, as long as it is made of an appropriate material.

[0028] Perovskite compounds are General formula: ABX3...(1) The photoelectric conversion element 10 is composed of a compound represented by the formula (I). While the composition ratio of each element is preferably 1:1:3, it does not necessarily have to be 1:1:3. The content of each element may vary as appropriate, and each constituent element does not necessarily have to be a single type. As long as the photoelectric conversion element 10 has a photoelectric conversion function, there is a degree of freedom in the configuration as described above. In general formula (1), A is an organic molecule (including an organic group or an organic cation, the same applies in the present disclosure) or an inorganic atom (including an inorganic cation, the same applies in the present disclosure), or a combination thereof; B is a metal atom (including a metal cation, the same applies in the present disclosure); and X is a halogen atom (including a halogen anion, the same applies in the present disclosure). In general formula (1), the three Xs may be the same or different. When included in the photoelectric conversion layer 15, a perovskite compound can absorb light and convert it into electricity, and this fact should be taken into consideration. That is, a perovskite compound can be determined, for example, by containing organic molecules, metal atoms, and halogen atoms. Furthermore, a perovskite compound can be confirmed by detecting elements corresponding to A, B, and X, so long as the photoelectric conversion element has a photoelectric conversion function. For example, organic molecules containing carbon, nitrogen, and hydrogen are preferred, and therefore, carbon, nitrogen, hydrogen, a metal element, and a halogen element can be detected. Alternatively, a perovskite compound can be confirmed by having A, B, and X, for example, by detecting inorganic atoms, metal atoms, and halogen atoms. Furthermore, a perovskite compound can be confirmed by detecting elements corresponding to A, B, and X, so long as the photoelectric conversion element has a photoelectric conversion function. For example, cesium or rubidium is preferred as an inorganic atom, and therefore, cesium or rubidium, a metal element (preferably lead or tin), and a halogen can be detected. Furthermore, a perovskite compound does not necessarily need to be confirmed as having a crystalline structure, since it is a natural consequence of a photoelectric conversion element having a crystalline structure in order to have a photoelectric conversion function. The photoelectric conversion layer may contain a compound other than the perovskite compound.

[0029] Unless otherwise specified, the thickness or width of a layer is not specified, and it includes a pattern or island shape, or a layer having portions of different thickness. Preferably, a layer has a substantially constant thickness.

[0030] Unless otherwise specified, the terms "approximately" and "about" refer to the margin of manufacturing error, and preferably indicate that a variation of plus or minus 15% of the numerical value is allowed.

[0031] In the general formula (1), examples of the organic molecule represented by A include alkylamine, alkylammonium, and nitrogen-containing heterocyclic compounds. In the perovskite compound (1), the organic molecule represented by A may be only one type of organic molecule, or may be two or more types of organic molecules.

[0032] Examples of alkylamines include methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, trihexylamine, ethylmethylamine, methylpropylamine, butylmethylamine, methylpentylamine, hexylmethylamine, ethylpropylamine, and ethylbutylamine.

[0033] The alkylammonium is an ionized product of the alkylamine. Examples of the alkylammonium include methylammonium (CH3NH3), ethylammonium, propylammonium, butylammonium, pentylammonium, hexylammonium, dimethylammonium, diethylammonium, dipropylammonium, dibutylammonium, dipentylammonium, dihexylammonium, trimethylammonium, triethylammonium, tripropylammonium, tributylammonium, tripentylammonium, trihexylammonium, ethylmethylammonium, methylpropylammonium, butylmethylammonium, methylpentylammonium, hexylmethylammonium, ethylpropylammonium, and ethylbutylammonium.

[0034] Examples of the nitrogen-containing heterocyclic compound include imidazole, azole, pyrrole, aziridine, azirine, azetidine, azeto, azole, imidazoline, and carbazole. The nitrogen-containing heterocyclic compound may be an ionized compound. Phenethylammonium is preferred as the ionized nitrogen-containing heterocyclic compound.

[0035] In general formula (1), the organic molecule represented by A is preferably methylamine, ethylamine, propylamine, butylamine, pentylamine, hexylamine, methylammonium, ethylammonium, propylammonium, butylammonium, pentylammonium, hexylammonium, or phenethylammonium, more preferably methylamine, ethylamine, propylamine, methylammonium, ethylammonium, or propylammonium, and even more preferably methylammonium.

[0036] In general formula (1), examples of the metal atom represented by B include lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium. In the perovskite compound, the metal atom represented by B may be only one type of metal atom, or may be two or more types of metal atoms. From the viewpoint of improving the light absorption properties and charge generation properties of the perovskite compound, the metal atom represented by B is preferably a lead atom or a tin atom. From the viewpoint of reducing lead, a tin atom is preferred.

[0037] In addition, in general formula (1), examples of halogen atoms represented by X include fluorine atoms, chlorine atoms, bromine atoms, and iodine atoms, and examples of chalcogen atoms include oxygen atoms, sulfur atoms, selenium atoms, and tellurium atoms. In the perovskite compound, the halogen atoms or chalcogen atoms represented by X may be one type or two or more types. The halogen atom represented by X is preferably an iodine atom, from the viewpoint of enabling the perovskite compound to utilize light in a wide wavelength range. Specifically, of the three Xs, it is preferable that at least one X represents an iodine atom, and it is more preferable that all three Xs represent iodine atoms.

[0038] In the perovskite compound contained in the photoelectric conversion layer 15, in general formula (1), A is preferably one or more selected from the group consisting of cesium, rubidium, methylammonium, and formamidinium. In addition, in general formula (1), B is preferably one or more selected from the group consisting of lead and tin. In addition, in general formula (1), C is preferably one or more selected from the group consisting of iodine, bromine, and chlorine.

[0039] A hole transport layer 16 is formed on the photoelectric conversion layer 15. The hole transport layer 16 is a layer that has the function of transporting holes. As long as the photoelectric conversion element 10 functions, it is self-evident that the hole transport layer 16 on the positive electrode side of the photoelectric conversion layer 15 (including the positive electrode side of the photoelectric conversion layer, as in the present disclosure) has the function of transporting holes, and no confirmation is required. In other words, as long as the photoelectric conversion element 10 functions, the layer on the positive electrode side of the photoelectric conversion layer 15 is referred to as the hole transport layer. The positive electrode side may also be referred to as the hole transport side. Examples of materials that can be used for the hole transport layer 16 include spiro-OMeTAD (2,2',7,7'-Tetrakis(N,N-di-p-methoxyphenylamino)-9,9'-spirobifluorene), PTAA (Poly[bis(4-phenyl)(2,4,6-triMethylphenyl)amine]), P3HT (Poly(3-hexylthiophene-2,5-diyl)), poly-TPD (Poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzidine]), and PEDOT (Poly(3,4-EthyleneDiOxyThiophene)):PSS (Poly(4-StyreneSulfonate)). The hole transport layer 16 can be formed by a known film formation method such as spin coating, die coating, or inkjet printing. The thickness of the hole transport layer 16 is, for example, 40 nm to 600 nm. In order to improve the durability of the photoelectric conversion element 10, it is also preferable to use an inorganic material for the hole transport layer 16, such as nickel oxide or copper oxide.

[0040] An upper electrode 17 is formed on the hole transport layer 16. The upper electrode 17 preferably contains a metal or alloy containing at least one of Au, Ag, Cu, and Al. Alternatively, the upper electrode 17 may be made of a transparent conductive material such as ITO, ZnO, FTO, SnO2, or IZO. The upper electrode 17 may be formed by a known method such as vapor deposition, sputtering, spin coating, die coating, or inkjet printing. The thickness of the upper electrode 17 is, for example, 50 nm to 300 nm. The upper electrode 17 may be made of a conductive material such as graphite, graphene, carbon nanowires, carbon nanofibers, carbon nanotubes, or carbon black. Basically, any conductive material may be used.

[0041] Next, in the peripheral region of the lower substrate 12 (region other than the photoelectric conversion unit PE), the stacked portion from the photoelectric conversion layer 15 to the upper electrode 17 is etched and removed by wet etching, dry etching, laser scribing, mechanical scribing, or the like, to pattern the photoelectric conversion unit PE. At this time, at least a portion of the electron transport layer 14 is exposed in the etched region. At this time, the lower electrode 13 and the electron transport layer 14 may also be etched together, in which case at least a portion of the lower substrate 12 is exposed.

[0042] Next, a procedure for forming the sealing layer 18 and the inactive layer 19 around the photoelectric conversion unit PE will be described. In the area around the photoelectric conversion unit PE, the inactive layer 19 is formed on the electron transport layer 14 exposed by the etching. Furthermore, the sealing layer 18 is formed on the inactive layer 19. For the sealing layer 18, for example, a UV curable resin, a thermosetting resin, polyisobutylene, or the like can be used.

[0043] Thereafter, the upper substrate 11 is provided on the sealing layer 18 so that the photoelectric conversion unit PE is sandwiched between the lower substrate 12 and the upper substrate 11. As a result, the photoelectric conversion unit PE is surrounded by the lower substrate 12, the sealing layer 18, the upper substrate 11, etc., and is isolated (sealed) from the outside.

[0044] In the photoelectric conversion element 10 of this embodiment, by forming the inactive layer 19 between the sealing layer 18 and the electron transport layer 14, the adhesion (bonding strength) between the sealing layer 18 and the electron transport layer 14 is improved, and the durability of the photoelectric conversion element 10 is improved. The inactive layer 19 can be preferably formed as a layer as follows. The inactive layer 19 preferably has a higher electrical resistance in a direction parallel to the substrate surface than the photoelectric conversion layer 15. Unless otherwise specified, in this disclosure, "high electrical resistance" means "high electrical resistance in a direction parallel to the substrate surface." This allows the inactive layer 19 to improve the insulation of the photoelectric conversion unit PE from the outside. Furthermore, it is more preferable that the inactive layer 19 has a higher electrical resistance than the photoelectric conversion layer 15 under light irradiation. This allows the inactive layer 19 to improve the insulation of the photoelectric conversion unit PE from the outside, even under light irradiation. Furthermore, it is preferable that the inactive layer 19 contains a material having a higher electrical resistivity than the photoelectric conversion layer 15. Furthermore, it is more preferable that the inactive layer 19 contains a material having a higher electrical resistivity under light irradiation than the photoelectric conversion layer 15. Furthermore, it is preferable that the inactive layer 19 is made of a material having a higher electrical resistivity than the photoelectric conversion layer 15. Furthermore, it is more preferable that the inactive layer 19 is made of a material having a higher electrical resistivity under light irradiation than the photoelectric conversion layer 15. Furthermore, it is more preferable that the inactive layer 19 is made of a material having a higher electrical resistivity than the photoelectric conversion layer 15. Furthermore, it is more preferable that the inactive layer 19 contains an insulator. Furthermore, it is more preferable that the inactive layer 19 is made of an insulator. The passivation layer 19 can be formed by, for example, etching the peripheral region of the lower substrate 12 and then depositing lead iodide thereon by evaporation. The inactive layer 19 is preferably formed in the form of discontinuous islands. For example, the discontinuous islands can be formed by spraying a precursor solution by a spray method. The inactive layer 19 preferably has a non-perovskite structure. In this case, the electrical resistance of the inactive layer 19 tends to be high, making it easier to insulate it from the outside. The non-perovskite structure refers to a crystal structure different from that of a perovskite compound, and includes amorphous structures. The inactive layer 19 is preferably amorphous. In this case, the electrical resistance of the inactive layer 19 tends to be high, making it easier to insulate it from the outside. The passivation layer 19 may include at least one of an inorganic oxide and an inorganic nitride. The passivation layer 19 may be an inorganic oxide, an inorganic nitride, or an inorganic oxynitride. The passivation layer 19 may comprise at least one of silicon oxide or silicon nitride. The inert layer 19 may be silicon oxide, silicon nitride, or silicon oxynitride. In this case, the inert layer 19 can be formed by, for example, sputtering, CVD, or the like. The inactive layer 19 may contain at least one of lead iodide, lead bromide, tin iodide, and tin bromide. Alternatively, the inactive layer 19 may be lead iodide, lead bromide, tin iodide, or tin bromide. In this case, the inactive layer can be formed by, for example, a vapor deposition method or a spray method.

[0045] FIG. 2 is a cross-sectional view showing a modified example of the photoelectric conversion element 10 according to this embodiment. As shown in FIG. 2, the sealing layer 18 may be formed to fill the gap between the upper substrate 11 and the lower substrate 12 without any gaps. That is, the sealing layer 18 may be formed to cover the entire surface of the photoelectric conversion unit PE. In this case, the inactive layer 19 may be formed over the entire area surrounding the photoelectric conversion unit PE, or may be formed over only a portion of the area surrounding the photoelectric conversion unit PE. Note that when the photoelectric conversion element 10 is a photoelectric conversion module or the like and has components between the two substrates in addition to the photoelectric conversion unit PE (for example, when it has regions P1, P2, P3, etc. corresponding to the cutouts as shown in FIG. 8), even if the sealing layer 18 fills the gap between the upper substrate 11 and the lower substrate 12 without any gaps, the sealing layer 18 does not necessarily cover the entire surface of the photoelectric conversion unit PE in direct contact with the photoelectric conversion unit PE, but rather covers the components other than the photoelectric conversion unit PE.

[0046] 3 is a cross-sectional view showing another modified example of the photoelectric conversion element 10 according to the present embodiment. As shown in FIG. 3, in the photoelectric conversion section PE, the lower electrode 13, the electron transport layer 14, the photoelectric conversion layer 15, the hole transport layer 16, and the upper electrode 17 may all be patterned in the same region in a planar view. That is, the lower electrode 13 and the electron transport layer 14 do not need to be formed extending outside the region of the photoelectric conversion section PE as in the example of FIG. 1. In this case, the inactive layer 19 is formed in contact with the lower electrode 13.

[0047] 1, when the lower electrode 13 and the electron transport layer 14 are formed so as to extend outside the region of the photoelectric conversion section PE, patterning of the lower electrode 13 and the electron transport layer 14 is not required, which simplifies the manufacturing process of the photoelectric conversion element 10 and reduces manufacturing costs. However, in this case, the material of the electron transport layer 14 must be selected from the perspective of improving the device performance of the photoelectric conversion section PE, and there is no freedom in selecting a material to improve adhesion with the sealing layer 18. Therefore, it is effective to apply the configuration of the present disclosure, which interposes an inactive layer 19 between the electron transport layer 14 and the sealing layer 18 to improve adhesion of the sealing layer 18.

[0048] 4 is a cross-sectional view showing yet another modified example of the photoelectric conversion element 10 according to this embodiment. As shown in FIG. 4, the inactive layer 19 may be provided not only between the sealing layer 18 and the lower substrate 12, but also between the sealing layer 18 and the upper substrate 11. However, in this embodiment, the upper substrate 11 has a higher degree of freedom in material selection compared to the electron transport layer 14 (or the hole transport layer 16 in the third embodiment) or the lower substrate 12, which is a transparent substrate. For this reason, the upper substrate 11 itself can easily be made of a material that has high adhesion to the sealing layer 18, and it is also possible to omit the inactive layer 19 between the sealing layer 18 and the upper substrate 11.

[0049] Second Embodiment Fig. 5 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element 10 of this embodiment. As shown in Fig. 5, the inactive layer 19 may be formed in the form of a plurality of discrete islands, rather than being a layer formed to a uniform thickness. Other than that, the configuration can be the same as that of the first embodiment, including modified examples.

[0050] When the inactive layer 19 is formed in an island shape in this way, the contact area between the inactive layer 19 and the sealing layer 18 increases, and it is possible to further improve the adhesion (bonding strength) between the sealing layer 18 and the lower substrate 12. Furthermore, by forming the inactive layer 19 discretely, it is possible to further improve the insulation between the photoelectric conversion unit PE and the outside.

[0051] Third Embodiment Fig. 6 is a cross-sectional view showing a schematic configuration of a photoelectric conversion element 10 of this embodiment. The photoelectric conversion element 10 shown in Fig. 6 has a configuration in which the positions of the electron transport layer 14 and the hole transport layer 16 are swapped with respect to the photoelectric conversion element 10 shown in Fig. 1. That is, in the photoelectric conversion section PE, the hole transport layer 16 may be formed between the lower electrode 13 and the photoelectric conversion layer 15, and the electron transport layer 14 may be formed between the upper electrode 17 and the photoelectric conversion layer 15. Other than that, the configuration can be the same as that of the first embodiment, including the modified examples.

[0052] Furthermore, it is not essential that the photoelectric conversion section PE include both the electron transport layer 14 and the hole transport layer 16, and the photoelectric conversion section PE may include only one of the electron transport layer 14 and the hole transport layer 16. Alternatively, both the electron transport layer 14 and the hole transport layer 16 may be omitted from the photoelectric conversion section PE.

[0053] Furthermore, when the photoelectric conversion element 10 is provided with an electron transport layer 14 or a hole transport layer 16, and the electron transport layer 14 or the hole transport layer 16 is a layer that exists between the inactive layer 19 and the lower substrate 12, it is preferable that the layer be made of an inorganic material.

[0054] [Fourth embodiment] In this embodiment, a photovoltaic conversion module and a photovoltaic conversion system according to the present disclosure will be described. Fig. 7 is a plan view of a photovoltaic conversion module 100 according to the present disclosure, with the upper substrate 11 omitted. Fig. 8 is a cross-sectional view of the photovoltaic conversion module 100 taken along line VIII-VIII in Fig. 7. However, the upper substrate 11 is not omitted in Fig. 8.

[0055] The photoelectric conversion module 100 refers to a photoelectric conversion element 10 having a plurality of photoelectric conversion units PE connected in series. In other words, the photoelectric conversion module 100 is one form of the photoelectric conversion element 10. In the photoelectric conversion module 100, the sealing layer 18 is provided in common for the plurality of photoelectric conversion units PE. Furthermore, any of the photoelectric conversion elements 10 described in the first to third embodiments can be applied to the photoelectric conversion module 100, and FIG. 8 illustrates a photoelectric conversion module 100 to which the photoelectric conversion element 10 of FIG. 1 is applied.

[0056] The photoelectric conversion module 100 is patterned by several cuts and has regions P1, P2, and P3 corresponding to these cut locations, as shown in Fig. 7. In Fig. 7, the upper electrode 17 and the lower electrode 13 (or the electron transport layer 14) provided in the photoelectric conversion unit PE are present on the surface.

[0057] As shown in Figure 8, the notch in region P1 is formed by etching away the lower electrode 13, and separates the lower electrodes 13 of two adjacent photoelectric conversion units PE (for example, photoelectric conversion element units PEa and PEb in Figure 8).

[0058] The notches in region P2 are formed by etching away the electron transport layer 14, the photoelectric conversion layer 15, and the hole transport layer 16, and are provided to electrically connect two adjacent photoelectric conversion units PE (for example, photoelectric conversion units PEa and PEb in FIG. 8). That is, in region P2, the material of the upper electrode 17 is filled into the formed notches, thereby connecting the upper electrode 17 of one photoelectric conversion unit PE (for example, photoelectric conversion unit PEa) to the lower electrode 13 of the other photoelectric conversion unit PE (for example, photoelectric conversion unit PEb).

[0059] The notch in region P3 is formed by patterning the photoelectric conversion layer 15, the hole transport layer 16, and the upper electrode 17, and is provided to separate the upper electrodes 17 of two adjacent photoelectric conversion units PE (for example, photoelectric conversion units PEa and PEb in FIG. 8). Note that in region P3 in FIG. 8, the formed notch is etched away up to the photoelectric conversion layer 15, exposing the electron transport layer 14 on the surface of region P3. However, in region P3, it is sufficient that at least the upper electrode 17 is removed, and it is more preferable that the hole transport layer 16 is also removed. However, the photoelectric conversion layer 15 does not necessarily have to be removed. That is, a portion of the photoelectric conversion layer 15 may remain. In this case, the photoelectric conversion layer 15 is exposed on the surface of region P3. Alternatively, at least a portion of the hole transport layer 16 may be exposed without being removed. Alternatively, the electron transport layer 14 may also be removed to expose at least a portion of the lower electrode 13.

[0060] In the photoelectric conversion module 100, the region between region P3 and region P1 but not including region P2 is the formation region of the photoelectric conversion unit PE. That is, in the formation region of the photoelectric conversion unit PE, the upper electrode 17, the photoelectric conversion layer 15, and the lower electrode 13 of the same photoelectric conversion unit PE overlap in a planar view. Note that the region between region P3 and region P1 and including region P2 is a connection region for electrically connecting two adjacent photoelectric conversion units PE.

[0061] In this way, the photoelectric conversion module 100 is configured such that the photoelectric conversion units PE are separated by the regions P1 and P3, and two adjacent photoelectric conversion units PE are electrically connected by the region P2. As a result, the photoelectric conversion module 100 includes a plurality of photoelectric conversion units PE connected in series, as shown in the circuit diagram of FIG.

[0062] Fig. 10 is a schematic diagram of a photovoltaic conversion system 1000 according to the present disclosure. As shown in Fig. 10, the photovoltaic conversion system 1000 includes the above-described photovoltaic conversion module 100, a power conditioner 101, a distribution board 102, a power meter 103, a storage battery 104, and an electrical device 105. The photovoltaic conversion system 1000 illustrated in Fig. 10 is provided with one each of the photovoltaic conversion module 100, the power conditioner 101, the distribution board 102, the power meter 103, the storage battery 104, and the electrical device 105, but a plurality of each may be provided.

[0063] The power conditioner (control circuit) 101 controls the current and voltage so that the power output from the photovoltaic conversion module 100 is optimized, and also performs the desired power distribution while monitoring the output power of the photovoltaic conversion module 100 and the charge level of the storage battery 104, and outputs power to the storage battery 104 and the distribution board 102. At this time, DC power is output to the storage battery 104, and AC power is output to the distribution board 102. In other words, the power conditioner 101 has the function of converting DC power to AC power.

[0064] The distribution board 102 supplies the AC power received from the power conditioner 101 to the electrical equipment 105 and the power meter 103 in a desired distribution while monitoring the output power of the power conditioner 101 and the power consumption of the electrical equipment 105 .

[0065] The power meter 103 measures the power supplied from the distribution board 102 and supplies it to the commercial power system.

[0066] The electric device 105 may be connected to the power conditioner 101 instead of being connected to the distribution board 102. In this case, the power conditioner 101 performs the desired power distribution while monitoring the output power of the photovoltaic conversion module 100, the charge level of the storage battery 104, and the power consumption of the electric device 105, and supplies AC power to the distribution board 102, DC power to the storage battery 104, and AC power to the electric device 105. If the electric device 105 is for DC power, DC power may be supplied.

[0067] The embodiments disclosed herein are illustrative in all respects and are not intended to be limiting. Therefore, the technical scope of the present disclosure should not be interpreted solely by the above-described embodiments, but should be determined based on the claims. [Explanation of symbols]

[0068] 10 Photoelectric conversion element 11 Upper board 12 Lower board (base) 13 Lower electrode 14 Electron transport layer 15 Photoelectric conversion layer 16 Hole transport layer 17 Upper electrode 18 Sealing layer 19 Inactive layer 100 Photoelectric conversion module 101 Power conditioner (control circuit) 1000 Photoelectric Conversion System PE photoelectric conversion unit

Claims

1. a substrate; a photoelectric conversion section provided on the base body and including a photoelectric conversion layer containing a perovskite compound; a sealing layer provided on the base body in an area where the photoelectric conversion unit is not present; A photoelectric conversion element comprising an adhesion auxiliary layer formed between the substrate and the sealing layer.

2. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer is a layer having a higher electrical resistance in a direction parallel to a substrate surface than the photoelectric conversion layer.

3. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer is provided in the form of a plurality of discrete islands.

4. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer is provided in contact with the sealing layer.

5. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer is an inactive layer.

6. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer has a non-perovskite structure.

7. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer is amorphous.

8. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer contains at least one of an inorganic oxide and an inorganic nitride.

9. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer contains at least one of silicon oxide and silicon nitride.

10. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the adhesion auxiliary layer contains at least one of lead iodide, lead bromide, tin iodide, and tin bromide.

11. The photoelectric conversion element according to claim 1, The photoelectric conversion element, wherein the photoelectric conversion section has at least one of an electron transport layer and a hole transport layer.

12. The photoelectric conversion element according to claim 10, The photoelectric conversion element, wherein the adhesion auxiliary layer is provided in contact with one of the electron transport layer and the hole transport layer, which is closer to the substrate.

13. The photoelectric conversion element according to any one of claims 1 to 12, A photoelectric conversion element configured as a photoelectric conversion module having a plurality of the photoelectric conversion units connected in series.

14. A photoelectric conversion module that is one embodiment of the photoelectric conversion element according to claim 1 , A photoelectric conversion module comprising a plurality of photoelectric conversion units connected in series.

15. A photoelectric conversion system comprising the photoelectric conversion module according to claim 14 and a control circuit.

Images