Display device

Abstract

To provide a display device capable of reducing power consumption and improving its numerical aperture.SOLUTION: The display device comprises pixels including a first sub-pixel and a second sub-pixel. The first sub-pixel includes a first coloured layer and a first transistor. The second sub-pixel includes a second coloured layer and a second transistor. A portion of a semiconductor layer included in the first transistor and the second transistor, where a channel can be formed, is arranged so as to overlap with the first coloured layer. The first coloured layer is a coloured layer which is likely to absorb light in short wavelength side in comparison with the second coloured layer. A semiconductor layer, an electrode, wiring and the like constituting the transistor transmits visible light.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, and the like. , electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof The law can be cited as an example.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to devices in general. Transistors, semiconductor circuits, arithmetic units, memory devices, etc. are types of semiconductor devices. In addition, it is also used in imaging devices, electro-optical devices, power generation devices (thin film solar cells, organic thin film solar cells) and the like), and electronic devices may include semiconductor devices. [Background technology]

[0004] There is a demand for power saving in electronic devices, especially smartphones and tablet devices. Portable electronic devices use batteries as their power source, so if they consume a lot of power, they may not last long on a single charge. The usable period will be shorter.

[0005] Furthermore, a liquid crystal display device is known as one of the display devices mounted on electronic devices. The LCD device controls the amount of light transmitted from the backlight by utilizing the optical modulation effect of the liquid crystal. This allows contrast to be expressed and images to be displayed.

[0006] For example, a metal oxide channel-type switching element is used as a switching element connected to each pixel electrode. Active matrix liquid crystal display devices using transistors as a composition region are known. (Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-123861 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-96055 Summary of the Invention [Problem to be solved by the invention]

[0008] One way to reduce the power consumption of a liquid crystal display (LCD panel) is to use a backlight. One of the advantages of this method is that it allows efficient extraction of light from the glass.

[0009] An object of one embodiment of the present invention is to provide a display device that can reduce power consumption. Another object is to increase the aperture ratio of a display device. It is an object of the present invention to provide a display device that is highly reliable. One of our goals is to provide the following.

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter can be extracted from the description, drawings, claims, etc. [Means for solving the problem]

[0011] One embodiment of the present invention is a semiconductor device including a first colored layer, a second colored layer, a first transistor, and a second transistor. The display device includes a transistor, a first display element, and a second display element. The display element is electrically connected to the first transistor and overlaps with the first coloring layer. The second display element is electrically connected to the second transistor and overlaps with the second coloring layer. The first transistor has a first semiconductor layer, and the second transistor has a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are overlapped with the first colored layer. It has a part that does this.

[0012] Another aspect of the present invention is a liquid crystal display device including a first colored layer, a second colored layer, a third colored layer, and a third colored layer. a first transistor, a second transistor, a third transistor, and a first display element; The display device has a first display element, a second display element, and a third display element. The second display element is electrically connected to the first transistor and overlaps with the first coloring layer. The third transistor is electrically connected to the second coloring layer and overlaps the second coloring layer. The display element is electrically connected to the third transistor and overlaps with the third coloring layer. The first transistor has a first semiconductor layer, and the second transistor has a second semiconductor layer. The third transistor has a third semiconductor layer. The first colored layer and the third semiconductor layer each have a portion overlapping with the first colored layer.

[0013] In the above, the first colored layer transmits light having a longer wavelength than the second colored layer. Alternatively, it is preferable that the first colored layer transmits red light.

[0014] In the above, it is preferable to have a light source that emits white light. The color layer is located between the light source and the first semiconductor layer and between the light source and the second semiconductor layer. is preferred.

[0015] In the above, the first transistor includes a first gate electrode and a first semiconductor The second transistor has a first electrode and a second electrode connected to the layer, and a second gate electrode. a third electrode connected to the second semiconductor layer, and a fourth electrode connected to the second semiconductor layer; In this case, the first electrode, the second electrode, the third electrode, and the fourth electrode are preferably Each of them preferably transmits visible light and has a portion overlapping with the first colored layer. At this time, the first gate electrode and the second gate electrode also transmit visible light, and It is preferable that the first gate electrode and the second color layer overlap each other. The two gate electrodes may each have a function of blocking visible light.

[0016] In the above, it is preferable to have a first wiring and a second wiring. The first electrode is electrically connected to the first wiring, and the second electrode is electrically connected to the first display element. The third electrode is electrically connected to the second wiring, and the fourth electrode is electrically connected to the second display element. In this case, the fourth electrode is preferably connected to the second wiring at a portion where the fourth electrode intersects with the second wiring. Alternatively, the fourth electrode may have a portion intersecting the first wiring. It is preferable that the fourth electrode has a portion intersecting with the first wiring and a portion intersecting with the second wiring. It is preferable that the wiring does not cross either the first wiring or the second wiring.

[0017] In the above, it is preferable to have a first wiring and a second wiring. The first transistor has a first gate electrode and the second transistor has a second gate In this case, the first semiconductor layer has a portion overlapping with the first gate electrode. and a portion connected to the first wiring, and the second semiconductor layer overlaps the second gate electrode. The second semiconductor has a portion that is connected to the first wiring and a portion that is connected to the second wiring. It is preferable that the layer has a portion that intersects with the second wiring. The semiconductor layer has a portion intersecting with the second wiring and a portion intersecting with the first wiring. Alternatively, the second semiconductor layer does not intersect with either the first wiring or the second wiring. It is preferable that there is no

[0018] In the above, the first semiconductor layer and the second semiconductor layer each contain a metal oxide. It is preferred that it contains

[0019] In the above, the first display element has a fifth electrode, a sixth electrode, and a liquid crystal. In this case, the fifth electrode is preferably electrically connected to the first transistor. The first, fifth and sixth electrodes preferably transmit visible light. [Effects of the Invention]

[0020] According to one embodiment of the present invention, a display device capable of reducing power consumption can be provided. It is possible to increase the aperture ratio of the device. Alternatively, it is possible to develop a display that has both a high aperture ratio and high reliability. Alternatively, a novel display device can be provided.

[0021] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. can be extracted from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0022] [Figure 1] 1 shows an example of the configuration of a display device. [Figure 2] 1 shows an example of the configuration of a display device. [Figure 3] 1 shows an example of the configuration of a display device. [Figure 4] 1 shows an example of the configuration of a display device. [Figure 5] 1 shows an example of the configuration of a display device. [Figure 6] 1 shows an example of the configuration of a display device. [Figure 7] 1 shows an example of the configuration of a display device. [Figure 8] 1 shows an example of the configuration of a display device. [Figure 9] 1 shows an example of the configuration of a display device. [Figure 10] 1 shows an example of the configuration of a display device. [Figure 11] 1 shows an example of the configuration of a display device. [Figure 12] 1 shows an example of the configuration of a display device. [Figure 13] 1 shows an example of the configuration of a display device. [Figure 14] 1 shows an example of the configuration of a display device. [Figure 15] 1 shows an example of the configuration of a display device. [Figure 16] 1 shows an example of the configuration of a display device. [Figure 17] 1 shows an example of the configuration of an input device. [Figure 18] 1 shows an example of the configuration of an input device. [Figure 19] An example of a touch panel configuration. [Figure 20] Circuit diagram and timing chart. [Figure 21] An example of the display module configuration. [Figure 22] An example of the configuration of electronic devices. [Figure 23] An example of the configuration of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0023] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0024] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0025] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0027] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor can be , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT) ) is included.

[0028] In this specification, a display panel, which is one aspect of a display device, displays (outputs) an image or the like on a display surface. Therefore, a display panel is one aspect of an output device.

[0029] In this specification, the substrate of the display panel is provided with, for example, an FPC (Flexible Printed Circuit). Integrated Circuit) or TCP (Tape Carrier Packa ge) or a connector such as COG (Chip On Ground) is attached to the board. The IC mounted on the display panel module is called a display module. It may also be called a display panel or simply a display panel.

[0030] In this specification, a touch sensor is a sensor that is touched by a detected object such as a finger or a stylus. It has the function of detecting when something is pressed or approached. Therefore, the touch sensor is one aspect of the input device. For example, a touch sensor may have one or more sensor elements.

[0031] In addition, in this specification and the like, a substrate having a touch sensor is referred to as a touch sensor panel or a single In this specification, the base of the touch sensor panel is A board with a connector, such as an FPC or TCP, attached, or a substrate A device with an IC mounted on it using the COG method or other methods is called a touch sensor panel module. It may be called a sensor module, a sensor module, or simply a touch sensor.

[0032] In this specification and the like, a touch panel, which is one aspect of a display device, is a device for displaying images and the like on a display surface. The display function (output) and the function of detecting when a finger or stylus touches or presses the display surface. It also has a function as a touch sensor that detects approaching. A touch panel is one type of input / output device.

[0033] The touch panel is, for example, a display panel (or display device) with a touch sensor, It can also be called a display panel (or display device) with a display function.

[0034] The touch panel may also have a configuration including a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function inside or on its surface. It is also possible.

[0035] In addition, in this specification, a substrate of a touch panel is provided with a connector such as an FPC or TCP. Those with connectors attached, or those with ICs mounted on the board using the COG method, etc. When referred to as a touch panel module, display module, or simply a touch panel, There is.

[0036] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0037] One aspect of the present invention is a liquid crystal display device including a plurality of transmissive liquid crystal elements and transistors electrically connected to the liquid crystal elements. and a display device comprising:

[0038] The liquid crystal element has a pair of electrodes and a liquid crystal. One of the pair of electrodes functions as a pixel electrode and is electrically connected to the transistor. The other of the pair of electrodes functions as a common electrode, and is supplied with a potential common to other pixels.

[0039] The display area of ​​the display device has a configuration in which a plurality of pixels are arranged in a matrix. Each subpixel has one pixel electrode and a selection transistor. The semiconductor device has a transistor that functions as a color layer and a coloring layer.

[0040] For example, one pixel has a first subpixel and a second subpixel. The second subpixel has a first color layer and a first transistor, and the second subpixel has a second color layer and a second transistor. In this case, the first transistor and the second transistor are More specifically, at least the first colored layer is a portion of the semiconductor layer of each of the first and second transistors where a channel can be formed; The second color layer is disposed so as to overlap the first color layer.

[0041] As a result, the light irradiated onto the first transistor and the second transistor is The light is transmitted through the first colored layer. The data is made to be able to make the degree of influence received by each light irradiation equal. Therefore, it is possible to prevent the occurrence of variations in contrast between adjacent sub-pixels. This can be done.

[0042] Furthermore, the first colored layer is a colored layer that is more likely to absorb light on the short wavelength side than the second colored layer. In particular, the first colored layer transmits light of a longer wavelength than the second colored layer. However, it is preferable that the color layer absorbs other visible light. The light irradiated onto the first and second transistors through the first colored layer is Therefore, the short wavelength light is absorbed, reducing the effect of light on these transistors. Alternatively, the light transmitted through the first colored layer can be transmitted to each transistor. This makes it possible to realize a highly reliable display device.

[0043] Here, when a backlight is provided, the first transistor and the second transistor and a backlight is provided so that the first colored layer is disposed between the backlight and the first colored layer. This allows the first transistor and the second transistor to be illuminated from the backlight. This can suppress the influence of light irradiated onto the sensor.

[0044] In addition, a first colored layer is formed on the opposite side of the backlight (display surface side) with each transistor sandwiched therebetween. In this case, external light incident on the display device from the display surface side is reflected by the transistor. This can reduce the impact on the monitor.

[0045] The semiconductor layer in which the channels of the first transistor and the second transistor are formed contains a semiconductor Metal oxides that exhibit conductive properties (oxide semiconductors (OS) Furthermore, it is preferable to apply a semiconductor layer having a channel formation region. It is preferable that the low resistance region has a pair of low resistance regions sandwiching the channel formation region. This is the part with higher conductivity than the oxide conductor (OC). This allows the region where the semiconductor layer is disposed to be a region that transmits visible light. Since the transparent region can be used as a transparent region, the aperture ratio of the display device can be increased. can be done.

[0046] Furthermore, the electrodes and wirings constituting the first transistor and the second transistor are provided with a visible It is preferable to use a light-transmitting material, and it is particularly preferable to use a metal oxide. For example, the gate electrodes, source electrodes, and drain electrodes of the first transistor and the second transistor Each of the inner electrodes can be made of a light-transmitting conductive material. The aperture ratio of the display device can be further increased.

[0047] The low resistance region of the semiconductor layer, the source electrode, and the drain electrode each have light-transmitting properties. Therefore, these contact areas can also be used as transmissive areas, further increasing the aperture ratio. can be increased to.

[0048] As described above, the channel forming region of the semiconductor layer is disposed so as to overlap the first colored layer. Therefore, the gate electrode has a light-transmitting property, and light is irradiated to the channel forming region through the first colored layer. Even if the voltage is applied to each transistor, the influence on each transistor can be suppressed.

[0049] For example, in the first subpixel, the pixel electrode is made up of a semiconductor layer having light transmission properties, a gate electrode, a source electrode, and a The gate electrode may have a portion overlapping with the gate electrode, drain electrode, etc.

[0050] Each sub-pixel may have a capacitance element that functions as a storage capacitor. The pair of electrodes constituting the quantum element and the wiring electrically connected thereto are provided with a light-transmitting conductive material. It is preferable to use a conductive material. The color layer may be disposed on top of the color layer of the ink jet recording medium.

[0051] Here, a light-transmitting material is used for the source electrode and the drain electrode, and a light-shielding material is used for the gate electrode. In this case, a light-shielding gate electrode may be disposed on the display surface side, and the first It is preferable to place the colored layer 1 closer to the backlight than the transistors. The influence of light from the backlight can be suppressed by the first colored layer, and the light incident from the display surface side can be suppressed. The influence of external light entering the device can be suppressed by using a light-shielding gate electrode.

[0052] In addition, the wiring (also called bus line) for electrically supplying signals and potentials to each sub-pixel is Although a light-transmitting material may be used, a light-shielding material such as a metal may be used. The bus line is preferably a line through which a gate signal is supplied. lines (also called gate lines), and wiring to which source signals are supplied (also called source lines or signal lines). and wiring (also called power supply line) through which a common potential or a power supply potential is supplied. In this case, the entire area other than the bus lines can be made into a transparent area, achieving an extremely high aperture ratio. It can be achieved.

[0053] A pixel may have three or more sub-pixels of different colors. The transistor is not arranged in the area overlapping with the colored layer that transmits light, and the transistor is not arranged in the area overlapping with other colored layers. In particular, a structure that transmits light on the longest wavelength side can be used. It is preferable to arrange the transistors of the respective sub-pixels so as to overlap the colored layers. stomach.

[0054] For example, if a pixel has sub-pixels corresponding to three lights of red, green, and blue, each sub-pixel The transistors have a color layer other than blue, that is, a red or green color layer. In particular, three transistors can be arranged on top of the red colored layer. It is preferable to place

[0055] A more specific example will be described below with reference to the drawings.

[0056] [Configuration example 1] 1A shows a perspective schematic diagram of a display device 10. The display device 10 is made up of a substrate 11 and a substrate 12. 2 are bonded together. In FIG. 1(A), the substrate 12 is shown by a dashed line. FIG. 1(A) corresponds to a perspective schematic view when viewed from the opposite side to the display surface side. In the display device 10, the substrate 11 side is the display surface side.

[0057] The display device 10 includes a display unit 13, a circuit 14, wiring 15, etc. The substrate 11 is provided with, for example, The display section 13 includes a conductive layer 21 that functions as a pixel electrode, a circuit 14, and a wiring 15. In addition, Figure 1(A) shows an example in which an IC 17 and an FPC 16 are mounted on a board 11. Therefore, the structure shown in FIG. 1(A) can also be called a display module. do.

[0058] The circuit 14 can be, for example, a circuit that functions as a scanning line driver circuit.

[0059] The wiring 15 has a function of supplying signals and power to the display unit 13 and the circuit 14. Power is supplied from the outside to the wiring 15 via the FPC 16. Supplied to 5.

[0060] In FIG. 1A, a substrate 11 is provided with an I The example in which IC17 is provided is shown. IC17 is used as a signal line driver circuit, for example. An IC having the above functions can be applied. Note that the IC 17 may not be provided. C17 is mounted on FPC16 using the COF (Chip On Film) method, etc. That's fine.

[0061] FIG. 1A shows an enlarged view of a part of the display unit 13. The display unit 13 has a plurality of displays. The conductive layer 21 of the display element is arranged in a matrix. It functions as an electrode.

[0062] [Cross-sectional structure example] FIG. 1(B) shows an example of a cross section corresponding to the cutting line A1-A2 in FIG. 1(A). B) shows a cross section of an area including three adjacent pixels (sub-pixels). 1B shows an example in which a transmissive liquid crystal element 20 is used as a display element. In this case, the substrate 11 side is the display surface side.

[0063] The display device 10 has a configuration in which a liquid crystal 22 is sandwiched between a substrate 11 and a substrate 12. The liquid crystal element 20 is made up of a conductive layer 21 provided on the substrate 11 side and a conductive layer 22 provided on the substrate 12 side. The liquid crystal 22 is sandwiched between the conductive layer 21 and the liquid crystal 22. An alignment film 24a is provided between the liquid crystal 22 and the conductive layer 23, and an alignment film 24b is provided between the liquid crystal 22 and the conductive layer 23. are.

[0064] The conductive layer 21 functions as a pixel electrode, and the conductive layer 23 functions as a common electrode, etc. In addition, both the conductive layer 21 and the conductive layer 23 have the function of transmitting visible light. The liquid crystal element 20 is a transmissive liquid crystal element.

[0065] FIG. 1B shows three liquid crystal elements 20. Each liquid crystal element 20 is colored. The colored layer 41R, the colored layer 41G, or the colored layer 41B overlaps the colored layer 41R, the colored layer 41G, or the colored layer 41B. A light-shielding layer 42 is provided. An insulating layer 26 is provided to cover each colored layer and the light-shielding layer 42. The conductive layer 23 is provided to cover the insulating layer 26. The light-shielding layer 42 is also provided to cover the transistor 30. It is preferable that the R etc. are also arranged to overlap the contact portion between the conductive layer 21.

[0066] For example, the colored layer 41R transmits red light and absorbs visible light of other wavelengths. The colored layer 41G transmits green light and absorbs visible light of other wavelengths. B transmits blue light and absorbs light of other wavelengths. The light 25R, the light 25G, and the light 25B transmitted through the colored layer 41B are visible light. Although it may have two or more peaks in the optical region, it is light having a single peak in the visible light region. Here, it is preferable that the colored layer 41R transmits light of the longest wavelength among the three colored layers. This layer transmits light of wavelengths other than those mentioned above and absorbs light of wavelengths other than those mentioned above.

[0067] The colors of light transmitted through the colored layers 41R, 41G, and 41B are This is not limited to this.

[0068] In FIG. 1B, the area where the colored layer 41R is provided is the display area 13R, and the area where the colored layer 41G is provided is the display area 13R. The area where the colored layer 41B is provided is the display area 13G. 13B. A light-shielding layer 42 is provided between display areas of different colors. It is preferable to have a light region.

[0069] A polarizing plate 39a is disposed outside the substrate 11, and a polarizing plate 39b is disposed outside the substrate 12. Furthermore, a backlight unit 90 is disposed outside the polarizing plate 39b. In the display device 10 shown in Fig. 1(B), the substrate 11 side is the display surface side.

[0070] On the substrate 11, a transistor 30R, a transistor 30G, and a transistor 30B are provided. Each transistor is, for example, a selection transistor of a sub-pixel. The transistor 30R is electrically connected to the conductive layer 21 that overlaps the colored layer 41R. The transistor 30G is electrically connected to the conductive layer 21 that overlaps the colored layer 41G. The transistor 30B is electrically connected to the conductive layer 21 that overlaps the colored layer 41B.

[0071] In FIG. 1C, the transistors 30R, 30G, and 30B are An enlarged view of a transistor 30 that can be applied is shown. 30 is a transistor with a so-called bottom gate channel etch structure. The gate electrode 30 includes a conductive layer 31 that functions as a gate electrode and an insulating layer 32 that functions as a gate insulating layer. 34, a semiconductor layer 32, and a pair of conductive layers 33 functioning as a source electrode and a drain electrode. The portion of the semiconductor layer 32 that overlaps with the conductive layer 31 serves as a channel formation region. The semiconductor layer 32 and the conductive layer 33 are provided in contact with each other.

[0072] The conductive layer 21 functioning as a pixel electrode is provided on the insulating layer 81. The insulating layer 81 is electrically connected to the conductive layer 33 through the opening. It preferably functions as a layer.

[0073] Here, the conductive layer 31, the semiconductor layer 32, the conductive layer 33, and the insulating layer 34 are each resistant to visible light. It is preferable that the film has light-transmitting properties. The light 25R can pass through the transistor 30. By arranging the colored layer 41R and the colored layer 41R on top of each other, the region where the transistor 30 is provided becomes transparent. The display area 40t functions as a display area 40t and can be used as part of the display area. A display with a high transmittance (i.e., the ratio of the area of ​​the transparent area per unit area within the display area) It is possible to realize a display device.

[0074] As shown in FIG. 1B, a plurality of transistors constituting a pixel are arranged in one colored layer 41R. By stacking them, light 25R of the same wavelength and intensity is incident on each transistor. Therefore, the electrical characteristics of each transistor change when irradiated with light 25R. If the product is affected by the above, the degree of the impact can be considered to be the same. This can prevent differences in contrast between the sub-pixels.

[0075] Furthermore, the light 25R transmitted through the colored layer 41R has the longest wavelength compared to the other light (i.e., Since it is light with a wavelength shorter than red, it is not absorbed by the semiconductor layer 32, etc. Therefore, the light 25R is absorbed by the semiconductor layer 32 of each transistor. Even in a transmissive configuration, a highly reliable display device can be realized.

[0076] As in the transistor 30a shown in FIG. 2, a conductive layer functioning as a gate electrode is A conductive layer 31a that blocks visible light may be applied. By blocking the light, external light incident from the display surface side is prevented from reaching the semiconductor layer 32. On the other hand, at this time, the conductive layer 31a The portion where the light-shielding layer is provided functions as a light-shielding region 40s, and therefore the configuration shown in FIG. 1(C) is more suitable. You can increase your speaking rate.

[0077] The above is the explanation of the first configuration example.

[0078] [Configuration example 2] A more specific example of the display device will be described below.

[0079] [Pixel configuration example 2-1] FIG. 3(A) shows one pixel 40 on the side opposite to the display surface side (i.e., the backlight unit side). 9 shows a schematic top view of the pixel 40 as seen from the side of the pixel 90. The pixel 40 has a wiring 51 that functions as a gate line and a sub-pixel 40R. , wiring 52G, wiring 52R, and wiring 52B functioning as source lines, respectively, and power supply lines A wiring 53 functioning as a

[0080] The subpixels 40G, 40R, and 40B are provided with colored layers 41G, 41R, and 41B, respectively. 41R or colored layer 41B is provided. Here, each colored layer is indicated by a broken line. In addition, in FIG. 3(A), some components (such as the conductive layer 21) are omitted. .

[0081] In the sub-pixel 40R, a transistor 30G and a transistor The transistor 30R, the transistor 30B, and the capacitance element 60R are provided. The conductive layers and semiconductor layers constituting the capacitor and the capacitive element 60R are made of materials that transmit visible light. It is preferable that

[0082] In FIG. 3A, the pixel 40 includes a transistor 30G, a transistor 30R, and a transistor 30G. An example in which a bottom gate structure transistor is used as the transistor 30B is shown. There are.

[0083] The sub-pixel 40G and the sub-pixel 40B are provided with a capacitive element 60G and a capacitive element 60B, respectively. Each capacitance element is provided in a region overlapping with the colored layer 41G or the colored layer 41B. Each capacitive element absorbs visible light in the same manner as the capacitive element 60R provided in the sub-pixel 40R. It is preferable that at least the capacitance element 60G or the capacitance element 60B is transparent. Alternatively, the other of the capacitances may be provided in a region overlapping with the colored layer 41R of the sub-pixel 40R. The element 60R is provided in a region overlapping with at least one of the colored layer 41G and the colored layer 41B. It may be possible.

[0084] In the pixel 40, the wiring 51, the wiring 52R, the wiring 52G, the wiring 52B, and the wiring 53 are connected to the wiring 51, the wiring 52R, the wiring 52G, the wiring 52B, and the wiring 53. A material that blocks visible light can be used for the other layers, and a material that transmits visible light can be used for the other layers. In FIG. 4, the pixel 40 is divided into a light-shielding region 40s that blocks visible light and a transparent region 40s that transmits visible light. In this example, the bus line is provided in the area 40t. Since most of the area other than the transparent area can be made into the transparent area 40t, it is possible to The aperture ratio can be significantly improved compared to the above.

[0085] FIG. 3B shows a circuit diagram of the pixel 40 corresponding to FIG. 3A. In addition to the above configuration, the liquid crystal element 20R, the liquid crystal element 20G, and the liquid crystal element 20B are clearly shown. There are.

[0086] The transistor 30R has a gate electrically connected to the wiring 51 and a source or drain One of the electrodes is electrically connected to the wiring 52R, and the other is connected to one electrode of the capacitor element 60R and the liquid crystal It is electrically connected to one electrode (pixel electrode) of the element 20R.

[0087] The transistor 30G has a gate electrically connected to the wiring 51 and a source or drain One of them intersects with the wiring 52R and is electrically connected to the wiring 52G, and the other intersects with the wiring 52R and the wiring 52G. The line 52G intersects with one electrode of the capacitance element 60G and the pixel electrode of the liquid crystal element 20G. is connected to.

[0088] The transistor 30B has a gate electrically connected to the wiring 51 and a source or drain One of them is electrically connected to the wiring 52B, and the other is connected to one electrode of the capacitance element 60B and the liquid crystal element. The pixel electrode is electrically connected to the pixel electrode of the pixel 20B.

[0089] The other electrodes of the capacitors 60R, 60G, and 60B are , and is electrically connected to the wiring 53.

[0090] [Cross-sectional configuration example 2-1] FIG. 5 shows cross sections taken along the cutting lines B1-B2 and C1-C2 shown in FIG. 3(A). The cutting line B1-B2 is a line 52R, a transistor 30R, a capacitor 60R, and a wiring 53, etc., and the cutting line C1-C2 is a line passing through the transistor 30G, the intersection 55, the capacitance element It is a line that passes through the terminal 60G and the wiring 53, etc.

[0091] In the following, the description of the parts described in the above Configuration Example 1 and FIG. 1(B) will be omitted. In the following, unless otherwise specified, layers obtained by processing the same film will be referred to as layers obtained by processing the same film. The same symbols will be used in the explanation.

[0092] The transistor 30R and the transistor 30G are bottom-gate transistors. The capacitance element 60R and the like are formed by the conductive layer 31, the conductive layer 33, and a layer positioned between them. and a part of the insulating layer 34 placed thereon.

[0093] The conductive layer 33 constituting the source electrode and drain electrode of each transistor, the wiring 52R, etc. The conductive layers are formed without an insulating layer. A wiring 52R is provided in contact with the top surface and side surface of one of the source and drain of the capacitor 30R. By this, they are electrically connected.

[0094] Also, a conductive layer 31 constituting the gate electrode of each transistor and a wiring 51 (not shown) The conductive layer constituting the wiring 53 and the like is formed without an insulating layer therebetween. The wiring 53 is provided in contact with the upper surface and side surfaces of the conductive layer 31 constituting the element 60R. As a result, they are electrically connected.

[0095] 5, an insulating layer 82 is provided to cover the transistor 30R and the like. An insulating layer 81 that functions as a planarization film is provided on the transistor. It is preferable that the film has a function as a protective film that prevents impurities from diffusing into the 30R, etc. For example, the insulating layer 82 may be made of an inorganic insulating material and the insulating layer 81 may be made of an organic insulating material. can be done.

[0096] The conductive layer 21 is provided on the insulating layer 81 and the insulating layer 82 in the region overlapping with the capacitance element 60R. The conductive layer 21 is electrically connected to the conductive layer 33 through the opening. By overlapping the connecting portion and the capacitor element 60R, it is possible to reduce the area of ​​the pixel. This makes it possible to realize a display device with higher resolution.

[0097] In the overlapping portion of the conductive layer 21 and the conductive layer 33, the cell gap of the liquid crystal element 20 is In addition, the upper surface of the conductive layer 21 may have an uneven shape at the connection portion. Therefore, the initial orientation of the liquid crystal 22 is different from that of other portions, which causes light leakage. Light leakage can lead to a decrease in contrast, so as shown in Figure 5, It is preferable to arrange a light-shielding layer 42 in the area overlapping the connection portion. Therefore, if the liquid crystal can be driven sufficiently, the light-shielding layer 42 is not provided in this portion, and the display area It is preferable to use it as a part of the above because it increases the aperture ratio.

[0098] Here, the conductive layers constituting the wiring 52G and the wiring 52R and the conductive layer 33 are insulated from each other. Since they do not have an edge layer, crossing them will result in an electrical short. At the intersection 55, the two conductive layers 33 sandwiching the wiring 52G and the wiring 52R are respectively The insulating layer 34 is electrically connected to the conductive layer 31 through an opening formed in the insulating layer 34. The wiring 52G and the wiring 52R have portions that overlap with each other via the insulating layer 34. In other words, the intersection 55 can also be said to have a bridge structure.

[0099] At the intersection 55, the electrical noise of the wiring 52G and the wiring 52R is superimposed on this. This may be transmitted to the conductive layer 31 and affect the display of the liquid crystal element 20G. The pixel 40 has a configuration in which the transistor 30G is not arranged in the sub-pixel 40G. The area of ​​the element 60G can be made larger than that of the capacitance element 60R. Furthermore, the capacitance element 60G is transparent to visible light. Therefore, even if the area is increased, a high aperture ratio can be maintained. As a method for further reducing the influence of noise, the interconnection 52G or the interconnection 52R and the conductive layer 31 may be It is preferable to make the area of ​​the difference as small as possible to reduce the capacitance therebetween.

[0100] The above is the description of the cross-sectional configuration example 2-1.

[0101] [Pixel configuration example 2-2] Figure 6 shows a schematic top view different from Figure 3(A). Note that the circuit diagram is the same as Figure 3(B). can be used.

[0102] The configuration shown in FIG. 6 includes transistors 30R, 30G, and 30B. Each of these is an example in which a transistor with a top gate structure is applied.

[0103] [Cross-sectional configuration example 2-2] FIG. 7 shows a schematic cross-sectional view corresponding to the cutting lines B3-B4 and C3-C4 in FIG. .

[0104] For example, the transistor 30R has an insulating layer on the semiconductor layer 32 that functions as a gate insulating layer. A conductive layer 34 and a conductive layer 31 that functions as a gate electrode are stacked. An insulating layer 82 is provided to cover these, and a source electrode and a drain electrode are formed on the insulating layer 82. The semiconductor layer 32 is provided in a region where it does not overlap with the conductive layer 31. The conductive layer 33 has a low resistance region 32a. It is electrically connected to the resistor region 32a.

[0105] At the intersection 55, the pair of conductive layers 33 sandwiching the wiring 52G and the wiring 52R are G and the wiring 52R are electrically connected to the conductive layer 31 that intersects with the wiring 52R via the insulating layer 82.

[0106] The region of the semiconductor layer 32 that overlaps with the conductive layer 31 functions as a channel formation region. The low resistance regions 32a are formed on both sides of the channel forming region. , a region having a higher carrier concentration or a higher impurity concentration than the channel formation region. When an oxide semiconductor (OS) is used for the semiconductor layer 32, the low resistance region 3 2a can be called an oxide conductor (OC).

[0107] [Pixel configuration example 2-3] Figure 8 shows a schematic top view of the device, with some differences from Figure 6. The circuit diagram is shown in Figure 3. (B) can be invoked.

[0108] 8, compared to the configuration shown in FIG. 6, a part of the low resistance region 32a is The main difference is that it is used as wiring for

[0109] [Cross-sectional configuration example 2-3] FIG. 9 shows a schematic cross-sectional view corresponding to the cutting lines B5-B6 and C5-C6 in FIG. .

[0110] For example, when the transistor 30R is considered, a part of the low resistance region 32a and the wiring 52R are are electrically connected without the conductive layer 33 interposed therebetween.

[0111] In addition, when the transistor 30G is considered, a part of the low resistance region 32a is connected to the wiring 52R and The wiring 52G intersects with the conductive layer 33 that constitutes one electrode of the capacitance element 60G. It has been done.

[0112] In this way, by using a part of the low resistance region 32a of the semiconductor layer 32 as wiring within the pixel, As a result, the number of contact portions can be reduced compared to the configurations shown in, for example, FIGS. 6 and 7. This makes it possible to realize a display device with higher resolution.

[0113] [Modification] In the above, the liquid crystal element is a vertical electric field type in which a pair of electrodes sandwiching the liquid crystal is arranged above and below. Although an example of a liquid crystal element is shown, the configuration of the liquid crystal element is not limited to this, and various types of liquid crystal elements may be used. can be applied.

[0114] Figure 10(A) shows the FFS (Fringe Field Switching) mode. 1 shows a schematic cross-sectional view of a display device having a liquid crystal element to which the present invention is applied.

[0115] The liquid crystal element 20R and the like are made up of a conductive layer 21 that functions as a pixel electrode, and a layer formed by connecting the conductive layer 21 and an insulating layer 83. The conductive layer 21 has a slit-shaped or comb-shaped upper surface. It has a shape.

[0116] In this configuration, a capacitance is formed at the overlapping portion of the conductive layer 21 and the conductive layer 23. Therefore, the capacitor element 60R and the like are not provided. This allows the area occupied by the pixel 40 to be reduced, thereby realizing a high-definition display device.

[0117] In FIG. 10A, the conductive layer 21 functioning as a pixel electrode is positioned on the liquid crystal 22 side. However, as shown in FIG. 10B, the conductive layer 23 functioning as a common electrode is located on the liquid crystal 22 side. The configuration may be such that the sensor is positioned at

[0118] The configuration of the transistor 30R, the transistor 30G, the intersection 55, etc. is not limited to this. The above-described configurations can be replaced as appropriate.

[0119] [Configuration example 3] In the above example, the colored layer and the like are disposed on the substrate 12 side. However, it is also possible to dispose the colored layer and the like on the substrate 11 side. This simplifies the structure of the substrate 12. This eliminates the need for high positional accuracy during assembly, which increases productivity. do.

[0120] [Cross-sectional configuration example 3-1] 11 shows a schematic cross-sectional view of the following example. The configuration shown in FIG. 11 is the same as the configuration shown in FIG. 1. The main difference is that the colored layers 41R and 41G are provided on the substrate 11 side. There are.

[0121] In FIG. 11, the colored layer 41R and the colored layer 41G are disposed between the insulating layer 82 and the insulating layer 81. The colored layer 41R is located on the transistor 30G, the transistor 30R, and the transistor 30R. The colored layer 41 is provided to cover the capacitor 30B (not shown), the capacitance element 60R, etc. G is provided to cover the capacitive element 60G.

[0122] A conductive layer 23 and an alignment film 24b are provided on the substrate 12 on the substrate 11 side. Both can be provided over the entire display area and do not require fine processing, so the colored layer 4 The configuration can be simplified compared to when 1R or the like is formed.

[0123] As described above, the conductive layer 21 functioning as a pixel electrode and the contact between the other conductive layers are The contact portion can be a cause of light leakage, so it is preferable to cover it with a light-shielding layer. However, when a light-shielding layer is provided on the substrate 12 side as shown in FIG. 5, the substrates 11 and 12 Since high positional accuracy is required when laminating the colored layer, the colored layer is disposed on the substrate 11 side. Therefore, it is preferable to place the light-shielding layer on the substrate 11 side.

[0124] In FIG. 11, a light-shielding layer 57 having a light-shielding property is disposed at a position overlapping the contact portion. The light-shielding layer 57 is formed by processing the same conductive film as the wiring 53, wiring 51, etc. Therefore, it can be formed without increasing the number of steps.

[0125] When the light-shielding layer 57 is conductive, the light-shielding layer 57 is formed in an island shape and is isolated from other wirings and electrodes. That is, the light-shielding layer 57 can be electrically insulated. Alternatively, for example, the light-shielding layer 57 can be placed in a loading state. Alternatively, the contact portion may be overlapped with a part of the wiring 51. In this way, a part of the wiring 51 may also serve as the light-shielding layer 57 .

[0126] FIG. 12 shows an example in which a light-shielding layer 58 is provided instead of the light-shielding layer 57 shown in FIG. .

[0127] The light-shielding layer 58 is provided on the upper part of the contact portion of the conductive layer 21. The light-shielding layer 58 is It has the function of blocking visible light or absorbing at least a part of visible light.

[0128] The light-shielding layer 58 serves as a gap spacer to maintain the distance between the substrate 11 and the substrate 12. Therefore, it can be operated by external forces such as pressing the display surface or bending the display device. When a force is applied or when the display device is vibrated, the cell gap of the liquid crystal element 20R etc. Since the cell gap is less likely to change, interference and color changes caused by changes in the cell gap are less likely to occur. stomach.

[0129] The light-shielding layer 58 is also provided to prevent an electrical short circuit between the conductive layer 21 and the conductive layer 23. Preferably, at least the upper surface thereof has insulating properties.

[0130] For example, the light-shielding layer 58 may be made of a resin containing a pigment, a dye, or carbon black. In addition, if the resin has conductivity, after forming the resin, Alternatively, the alignment film 24a may have a two-layer structure in which the alignment film 24a is covered with an insulating film. When the thickness is high and the light-shielding layer 58 is sufficiently covered, the upper surface of the light-shielding layer 58 has a conductive property. That's fine.

[0131] The light-shielding layer 58 can be provided on the substrate 12 side. In that case, the light-shielding layer 58 is provided on the substrate 11 side. Therefore, high positional accuracy is required when bonding the two. As such, it is preferable that the light-shielding layer 58 be provided on the substrate 11 side.

[0132] [Configuration example 4] In FIGS. 3A and 3B, one gate line and three source lines are connected to the pixel 40. However, the present invention is not limited to this configuration. In the following, three gate lines are connected to the pixel 40. An example of the configuration is shown below.

[0133] [Pixel configuration example 4] The pixel 40 shown in FIG. 13A has wiring 51G and wiring 51G which function as gate lines. 1R, a wiring 51B, a wiring 52 functioning as a source line, and a wiring 53 functioning as a power supply line. A line 53 is connected.

[0134] In addition, in FIG. 13(A), each transistor has a bottom gate structure, similar to FIG. 3(A). An example in which a transistor is applied is shown.

[0135] The transistor 30R, the transistor 30G, the transistor 30B, and the capacitance element 6 0R is disposed so as to overlap with the colored layer 41R. In addition, the capacitive element 60G and the capacitive element 60B are The colored layers 41G and 41B are disposed so as to overlap with each other, respectively.

[0136] FIG. 13B shows a circuit diagram of the pixel 40 corresponding to FIG. 13A.

[0137] The transistor 30R has a gate electrically connected to the wiring 51R, and a source or drain One of the electrodes is electrically connected to the wiring 52, and the other is connected to one electrode of the capacitance element 60R and the liquid crystal It is electrically connected to one electrode (pixel electrode) of the element 20R.

[0138] The gate of the transistor 30G intersects with the wiring 51R and is electrically connected to the wiring 51G. One of the source and drain is electrically connected to the wiring 52, and the other is connected to the wiring 51R and the wiring 51R. The line 51G intersects with one electrode of the capacitance element 60G and the pixel electrode of the liquid crystal element 20G. is connected to.

[0139] The transistor 30B has a gate electrically connected to the wiring 51B, and a source or drain One of the electrodes is electrically connected to the wiring 52, and the other is connected to one electrode of the capacitance element 60B and the liquid crystal element. The pixel electrode is electrically connected to the pixel electrode of the pixel 20B.

[0140] The other electrodes of the capacitors 60R, 60G, and 60B are , and is electrically connected to the wiring 53.

[0141] [Configuration example 5] In the above, either the source or drain of the transistor 30G, or the gate is An example is shown in which there is an intersection where a line intersects with the wire. At this intersection, electrical noise from the wiring , it may affect the display, so it is more preferable to have a configuration without an intersection. .

[0142] [Pixel configuration example 5-1] The configuration shown in FIG. 14A is different from the configuration shown in FIG. 3A in that the transistor 30G and The wiring 52R is provided between the transistors 30B, and the intersection 55 is not provided. The main differences are:

[0143] In FIG. 14A, the transistor 30R and the transistor 30B are connected between the wiring 52R and the wiring 52B. 30B is disposed, and the transistor 30G is disposed between the wiring 52R and the wiring 52G. The wiring 52R has a portion overlapping with the colored layer 41R.

[0144] In FIG. 14A, the wiring 52R crosses the region where the colored layer 41R is provided in the vertical direction. When the wiring 52R has a light-shielding property, the display region of the sub-pixel 40R is Therefore, the colored layer has a non-display area (light-shielding area) extending in the vertical direction. It is preferable to increase the lateral width of 41R in consideration of the width of wiring 52R.

[0145] By adopting such a configuration, it is not necessary to provide an intersection, and in addition, it is possible to In comparison, the wiring 52G, the wiring 52R, and the wiring 52B can be arranged farther apart. This reduces the parasitic capacitance between the wiring, making it suitable for displays with higher frame frequencies. It can be said that it is successful.

[0146] FIG. 14B shows a circuit diagram of the pixel 40 corresponding to FIG. 14A.

[0147] The transistor 30R has a gate electrically connected to the wiring 51 and a source or drain One of the electrodes is electrically connected to the wiring 52R, and the other is connected to one electrode of the capacitor element 60R and the liquid crystal It is electrically connected to one electrode (pixel electrode) of the element 20R.

[0148] The transistor 30G has a gate electrically connected to the wiring 51 and a source or drain One of them is electrically connected to the wiring 52G, and the other is connected to one electrode of the capacitance element 60G and the liquid crystal element. The pixel electrode is electrically connected to the pixel electrode of the pixel 20G.

[0149] The transistor 30B has a gate electrically connected to the wiring 51 and a source or drain One of them is electrically connected to the wiring 52B, and the other is connected to one electrode of the capacitance element 60B and the liquid crystal element. The pixel electrode is electrically connected to the pixel electrode of the pixel 20B.

[0150] [Pixel configuration example 5-2] FIG. 15(A) shows a circuit diagram of the configuration described below. The pixel units 40U are arranged in a matrix. By doing so, the display area can be configured.

[0151] The pixel unit 40U shown in FIG. 15(A) has, from the left, one wiring 52R and one wiring 52 The sub-pixels 40R and 40G are arranged between the pixel electrodes 40R and 40G, and the wiring 52B is arranged adjacent to the wiring 52G. the sub-pixel 40B and the sub-pixel 40R are disposed between the wiring 52B and the wiring 52R, A wiring 52G is provided adjacent to the wiring 52R, and a subpixel is formed between the wiring 52G and the wiring 52B. The pixel 40G and the sub-pixel 40B are arranged.

[0152] At least one transistor is arranged for each of two adjacent subpixels. These two transistors are connected to either one of the two colored layers of the two sub-pixels. At this time, the colored layer that absorbs light with a shorter wavelength is placed on the other. It is preferable to arrange a transistor so as to overlap the colored layer.

[0153] For example, the colored layer 41R is red, the colored layer 41G is green, the colored layer 41B is blue, and so on. In the case of a combination of the sub-pixel 40R and the sub-pixel 40G, In the case of the combination of the sub-pixel 40R and the sub-pixel 40B, the red colored layer 4 Two transistors are arranged overlapping with 1R. On the other hand, the combination of sub-pixel 40G and sub-pixel 40B In the case of overlapping, two transistors are arranged so as to overlap the green colored layer 41G.

[0154] For example, in the case of the circuit diagram shown in FIG. 15(A), the colored layers 41R, 41G, and The arrangement of the layer 41B is as shown in FIG.

[0155] [Pixel configuration example 5-3] The pixel 40 shown in FIG. 16A has four sub-pixels including the sub-pixel 40W. 0 includes two gate lines (wiring 51a and wiring 51b) and two source lines (wiring 52a and wiring 52b). The pixel 40 is connected to the wiring 51a, the wiring 52b, and one power supply line (wiring 53). In the area surrounded by the line 51b, the wiring 52a, and the wiring 52b, two sub-pixels are arranged in the vertical direction. It has a configuration in which two are arranged horizontally.

[0156] The subpixel 40W is a subpixel that emits, for example, white light. Alternatively, the colored layer may not be provided.

[0157] The pixel 40 has at least four transistors. The four transistors are These four transistors function as element selection transistors. It is placed in a position where

[0158] For example, in the case of the circuit diagram shown in FIG. 16(A), the colored layers are arranged as shown in FIG. 16(B). No colored layer is provided in the region of the subpixel 40W.

[0159] The above is a description of each example of the configuration of the display device.

[0160] [About each component] Each of the above components will be described below.

[0161] 〔substrate〕 A material having a flat surface can be used for the substrate of the display panel. The substrate that extracts the light from the substrate is made of a material that transmits the light. For example, glass, quartz, ceramic Materials such as acrylic, sapphire, and organic resin can be used.

[0162] By using a thin substrate, it is possible to reduce the weight and thickness of the display panel. Furthermore, by using a substrate having a thickness sufficient to provide flexibility, a flexible display panel can be realized. Alternatively, a thin glass substrate that is flexible can be used. Alternatively, a composite material in which glass and a resin material are bonded together with an adhesive layer may be used.

[0163] [Transistor] The transistor has a conductive layer that functions as a gate electrode, a semiconductor layer, and a a conductive layer that functions as a drain electrode; a conductive layer that functions as a gate insulating layer; and an insulating layer.

[0164] Note that the structure of a transistor included in a display device of one embodiment of the present invention is not particularly limited. For example, a planar type transistor or a staggered type transistor may be used. Alternatively, a top gate or bottom gate transistor may be used. Alternatively, gate electrodes may be provided above and below the channel. It may also be included.

[0165] The crystallinity of the semiconductor material used in the transistor is not particularly limited. Semiconductors with crystallinity (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or partially crystalline semiconductors) When a semiconductor having crystallinity is used, the transistor This is preferable because it can suppress the deterioration of the transistor characteristics.

[0166] In addition, the semiconductor material used in transistors must have an energy gap of 2 eV or more. Preferably, a metal oxide having a refractive index of 2.5 eV or more, more preferably 3 eV or more, is used. A typical example is a metal oxide containing indium, for example, CAC -OS etc. can be used.

[0167] Metal oxides with a wider band gap than silicon and a lower carrier density are used. The transistor has a low off-state current, which is The accumulated charge can be maintained for a long period of time.

[0168] The semiconductor layer may be made of, for example, indium, zinc, and M (aluminum, titanium, gallium, germanium, etc.). Rumanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium or It can be a film expressed as an In-M-Zn oxide containing metals such as hafnium .

[0169] When the metal oxide constituting the semiconductor layer is an In-M-Zn oxide, The atomic ratio of the metal elements in the sputtering target used to form a film is In≧M It is preferable that Zn≧M is satisfied. The atomic ratios were In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In :M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4. 1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5: The atomic ratio of the semiconductor layers to be formed is preferably 1:8 or the like. This includes a ±40% variation in the atomic ratio of metal elements contained in the ring target.

[0170] The bottom-gate transistor described in this embodiment can reduce the manufacturing steps. In addition, by using metal oxide, it is possible to form the film at a lower temperature than polycrystalline silicon. Materials with low heat resistance can be used as wiring and electrode materials below the semiconductor layer, and as substrate materials. This allows for a wider range of material choices. A multi-layer glass substrate or the like can be suitably used.

[0171] The semiconductor layer is made of a metal oxide film having a low carrier density. Carrier density is 1×10 17 / cm 3 Less than 1 × 10 15 / cm 3 Below, further Preferably 1 x 10 13 / cm 3 Less than or equal to 1×10 11 / cm 3 Below, More preferably, 1×10 10 / cm 3 Less than 1 x 10 -9 / cm 3 More than a career High density metal oxides can be used. Such metal oxides can be high purity intrinsic or It is called a high-purity intrinsic metal oxide in terms of quality. This results in a low impurity concentration and a low defect level density. Therefore, it can be said to be a metal oxide with stable properties.

[0172] However, the semiconductor characteristics and electrical characteristics (electric field characteristics) of the required transistors are not limited to these. It is sufficient to use an appropriate composition depending on the characteristics (effective mobility, threshold voltage, etc.). In order to obtain the semiconductor characteristics of a transistor, the carrier density, impurity concentration, and defect density of the semiconductor layer must be determined. It is preferable to appropriately set the recess density, atomic ratio of metal elements to oxygen, interatomic distance, density, etc. It's nice.

[0173] In the metal oxides that make up the semiconductor layer, silicon and carbon, which are elements of Group 14, If it is included, oxygen vacancies increase in the semiconductor layer, causing it to become n-type. The silicon and carbon concentrations in the layer (obtained by secondary ion mass spectrometry) were calculated by 2× 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 atoms / cm 3 The following do.

[0174] In addition, alkali metals and alkaline earth metals generate carriers when bonded with metal oxides. This may result in an increase in the off-state current of the transistor. Alkali metals or alkaline earth metals obtained by secondary ion mass spectrometry in body layers. The concentration of 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0175] In addition, if the metal oxide that makes up the semiconductor layer contains nitrogen, the electrons that act as carriers This increases the carrier density and makes it easier to become n-type. Therefore, transistors using this material tend to be normally-on. The nitrogen concentration obtained by secondary ion mass spectrometry is 5×10 18 atoms / cm 3 below It is preferable to do so.

[0176] Oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As a single-crystal oxide semiconductor, CAAC-OS (c-axis-aligned crystal-doped oxide semiconductor) stalline oxide semiconductor), polycrystalline oxide semiconductor, nc-OS(nanocrystalline oxide semiconductor r), pseudo-amorphous oxide semiconductor (a-like OS) oxide semiconductor), and amorphous oxide semiconductor.

[0177] In addition, a semiconductor layer of a transistor disclosed in one embodiment of the present invention may contain CAC-OS(Cl Loud-Aligned Composite oxide semiconductor (r) may also be used.

[0178] Note that, for the semiconductor layer of the transistor disclosed in one aspect of the present invention, the above-described non-single-crystalline oxide semiconductor or CAC-OS can be preferably used. Further, as the non-single-crystalline oxide semiconductor nc-OS or CAAC-OS can be preferably used.

[0179] Note that, in one aspect of the present invention, it is preferable to use CAC-OS as the semiconductor layer of the transistor. By using CAC-OS, high electrical characteristics or high reliability can be imparted to the transistor.

[0180] Note that the semiconductor layer may be a mixed film having two or more of the regions of CAAC-OS, polycrystalline oxide semiconductor, nc-OS region, pseudo-amorphous oxide semiconductor region, and amorphous oxide semiconductor region. The mixed film may have, for example, a single-layer structure or a laminated structure including any two or more of the above-described regions.

[0181] <Configuration of CAC-OS> Hereinafter, the configuration of CAC (Loud-Aligned Composite)-OS that can be used for the transistor disclosed in one aspect of the present invention will be described.

[0182] CAC-OS is, for example, a composition in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or in the vicinity thereof. Note that, hereinafter, in the metal oxide, one or more metal elements are unevenly distributed ​​​​​​​The region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more. A mixed state of particles with a size of 2 nm or less or close to that size is called a mosaic or patch state. Also called.

[0183] The metal oxide preferably contains at least indium. In addition to these, aluminum, gallium, yttrium, and zinc are preferably contained. Thorium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium Rumanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, Contains one or more selected from tantalum, tungsten, magnesium, etc. It may be included.

[0184] For example, CAC-OS in In-Ga-Zn oxide (In- Ga-Zn oxide may be specifically referred to as CAC-IGZO. (hereinafter referred to as InO X1 (X1 is a real number greater than 0.) or Indium Zinc oxide (hereinafter referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0. ) and gallium oxide (GaO X3 (X3 is a real number greater than 0) ), or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (X4, Y4, and Z1 and Z2 are real numbers greater than 0.) The material is separated into mosaics. The mosaic-like InO X1 , or In X2 Zn Y2 O Z2is uniformly distributed in the film This is a cloud-like configuration (hereinafter also referred to as a cloud-like configuration).

[0185] In other words, CAC-OS is X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 A composite metal oxide having a structure in which a region in which In this specification, for example, the atomic ratio of In to the element M in the first region is is greater than the atomic ratio of In to the element M in the second region. Compared to region 2, the concentration of In is higher.

[0186] IGZO is a common name and refers to a compound made of In, Ga, Zn, and O. A typical example is InGaO3(ZnO) m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of the crystalline compounds include those represented by the formula:

[0187] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned in the ab plane. The crystal structure is non-oriented and connected.

[0188] On the other hand, CAC-OS is a material structure of metal oxides. In a material composition containing Ga, Zn, and O, some nanoparticles with Ga as the main component were observed. The region where the In nanoparticles are observed is shown in part. This refers to a structure in which the crystals are randomly dispersed in a mosaic pattern. Structure is a secondary factor.

[0189] Note that CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, Not at all.

[0190] In addition, GaO X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 In some cases, a clear boundary between the region where the main component is the chromatic aberration and the region where the chromatic aberration is the main component may not be observed.

[0191] Instead of gallium, aluminum, yttrium, copper, vanadium, and beryllium can be used. Aluminum, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium If one or more selected elements such as cesium are included, CAC-OS will In the region, nanoparticles containing the metal element as the main component are observed, and in the region, In is the main component. The nanoparticle-like regions are randomly dispersed in a mosaic pattern. This refers to

[0192] CAC-OS is formed by sputtering under conditions where the substrate is not intentionally heated. When the CAC-OS is formed by a sputtering method, the deposition gas The gas is selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. One or more of these may be used. The lower the flow rate ratio of the gas, the more preferable. For example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%. It is more preferable to set the content to 0% or more and 10% or less.

[0193] CAC-OS is an X-ray diffraction (XRD) measurement method. When measured using one of the out-of-plane θ / 2θ scans In other words, from the X-ray diffraction, no clear peaks are observed in the measurement area. It can be seen that the orientation of the regions in the ab plane direction and the c axis direction is not observed.

[0194] In addition, CAC-OS uses an electron beam with a probe diameter of 1 nm (also called a nanobeam electron beam). In the electron diffraction pattern obtained by irradiating the sample, a ring-shaped region with high brightness and the corresponding Several bright spots are observed in the ring region. Therefore, the electron diffraction pattern indicates that CAC-OS The crystal structure of nc (nano- It can be seen that it has a crystal structure.

[0195] For example, in the CAC-OS of In-Ga-Zn oxide, energy dispersive X Energy Dispersive X-ray spectroscopy (EDX) EDX mapping obtained using scopy revealed that GaO X3 The region where is the principal component And, In X2 Zn Y2 O Z2 , or InO X1 The area where the main component is unevenly distributed and mixed It can be confirmed that the compound has a structure similar to that of the compound shown in FIG.

[0196] CAC-OS has a structure different from that of IGZO compounds, in which metal elements are uniformly distributed. CAC-OS has different properties from GZO compounds. X3 The main components are and the region where In X2 Zn Y2 O Z2 , or InO X1 The region where is the main component and the region where is The phases are separated into individual elements, resulting in a mosaic structure of regions each consisting of a different element as the main component.

[0197] Here, In X2 Zn Y2 O Z2 , or InO X1 The region where is the main component is GaO X This is a region with high conductivity compared to the region where In is the main component. X2 Zn Y2 O Z2 , or InO X1 The carriers flow through the area where the main component is gold. Therefore, the conductivity of In is expressed as a metal oxide. X2 Zn Y2 O Z2 , or InO X The region where 1 is the main component is distributed in a cloud-like manner in the metal oxide, resulting in a high field-effect transfer Mobility (μ) can be achieved.

[0198] On the other hand, GaO X3 The region where the main components are In X2 Zn Y2 O Z2 , or InO X1 This region has higher insulating properties than the region where GaO is the main component. X3 etc. The distribution of the region in which the main component is is in the metal oxide suppresses leakage current and provides good switching. Switching operation can be realized.

[0199] Therefore, when CAC-OS is used in a semiconductor device, GaOX3 Insulation and , In X2 Zn Y2 O Z2 , or InO X1 The conductivity caused by the This results in a high on-state current (I on ), and high field-effect mobility (μ) can be done.

[0200] Furthermore, semiconductor devices using CAC-OS have high reliability. It is ideal for various semiconductor devices including displays.

[0201] In addition, a transistor having a CAC-OS semiconductor layer has high field-effect mobility and Because of its high dynamic range, the transistor is connected to a driving circuit, typically a scanning By using this in a line driver circuit, it is possible to provide a display device with a narrow frame width (also called a narrow frame). In addition, the transistor can be connected to a signal line that supplies a signal from a signal line of a display device. A signal line driver circuit (especially a device connected to the output terminal of a shift register of the signal line driver circuit) By using it in a multiplexer, it is possible to provide a display device with fewer wires connected to the display device. It is possible.

[0202] In addition, the transistor with CAC-OS in the semiconductor layer is a transistor using low-temperature polysilicon. Unlike conventional transistors, no laser crystallization process is required. Even for display devices, it is possible to reduce manufacturing costs. ("4K resolution", "4K2K", "4K"), Super Hi-Vision ("8K resolution" For large display devices with high resolutions such as 8K, 1080p, 1080p, 8K4K, and 8K By using a transistor having a CAC-OS semiconductor layer in a driver circuit or a display portion, This is preferable because it allows writing in a short time and reduces display defects.

[0203] Alternatively, silicon may be used as the semiconductor in which the channel of the transistor is formed. Amorphous silicon may be used as the capacitor, but crystalline silicon is particularly preferred. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon can be formed at a lower temperature than single-crystalline silicon. It also has higher field-effect mobility and higher reliability than amorphous silicon.

[0204] The bottom-gate transistor described in this embodiment can reduce the manufacturing steps. In this case, amorphous silicon is used, which is preferable to polycrystalline silicon. Since it can be formed at low temperatures, it is suitable for use as a material for wiring and electrodes below the semiconductor layer, as well as for substrates. It is possible to use low-heat materials, which allows for a wider range of material choices. For example, a glass substrate with an extremely large area can be suitably used. Since the impurity region of the transistor is easily formed in a self-aligned manner, the characteristics of the transistor are not uniform. This is particularly preferable since it can reduce the amount of silicon used, such as polycrystalline silicon or single crystal silicon. It is suitable for use in such cases.

[0205] [Conductive Layer] In addition to the gate, source and drain of the light-shielding transistor, each element constituting the display device Materials that can be used for the conductive layers such as the seed wiring and electrodes include aluminum, titanium, and chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, Alternatively, metals such as tungsten, or alloys containing tungsten as the main component, can be used. Films containing these materials can be used as a single layer or as a laminate structure. A single-layer structure of aluminum film containing silicon, and a two-layer structure of aluminum film laminated on titanium film Two-layer structure with aluminum film laminated on tungsten film, copper-magnesium-aluminum Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film, A two-layer structure in which a copper film is laminated on a titanium film or titanium nitride film and a copper film is laminated on top of that. An aluminum film or copper film is laminated on the surface, and a titanium film or titanium nitride film is formed on the surface. Three-layer structure consisting of a molybdenum film or molybdenum nitride film and an aluminum film on top of it. A molybdenum film or a molybdenum nitride film is then formed on top of the copper film. There are three-layer structures, etc. It is also possible to use oxides such as indium oxide, tin oxide, or zinc oxide. In addition, using copper containing manganese improves the controllability of the shape by etching. preferable.

[0206] In addition to the gate, source, and drain of the light-transmitting transistor, and a conductive material having light-transmitting properties that can be used for conductive layers such as various wirings and electrodes. Examples include indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and gallium arsenide. Conductive oxides such as zinc oxide doped with ammonium or graphene can be used. Or gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron Metallic materials such as cobalt, copper, palladium, or titanium, and alloy materials containing such metallic materials Alternatively, nitrides of the metal materials (for example, titanium nitride) can be used. When a metal material or an alloy material (or a nitride thereof) is used, the transparent It is sufficient to make the film thin enough to have optical properties. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide can be used. These are used for various wirings that constitute the display device. Conductive layers such as lines and electrodes, and conductive layers of display elements (which function as pixel electrodes and common electrodes) It can also be used for conductive layers.

[0207] In addition, as a conductive material having transparency, it is possible to reduce the resistance by including impurity elements. The oxide semiconductor (oxide conductor (OC)) It is preferable.

[0208] [Insulating layer] Examples of insulating materials that can be used for each insulating layer include acrylic and epoxy. In addition to resins and resins with siloxane bonds, silicon oxide, silicon oxynitride, silicon nitride oxide, Inorganic insulating materials such as silicon, silicon nitride, and aluminum oxide can also be used.

[0209] As insulating films with low water permeability, films containing nitrogen and silicon such as silicon nitride film and silicon nitride oxide film are used. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0210] [Liquid Crystal Element] As a liquid crystal element, for example, a vertical alignment (VA) A liquid crystal element to which a vertical alignment mode is applied can be used. Multi-Domain Vertical Alignment) mode, PVA( Patterned Vertical Alignment) mode, ASV (Adv Advanced Super View mode can be used.

[0211] In addition, the liquid crystal element may be a liquid crystal element to which various modes are applied. In addition to VA mode, there are also TN (Twisted Nematic) and IPS (In-Vention) modes. -Plane-Switching) mode, FFS (Fringe Field Switching) itching) mode, ASM(Axially Symmetric aligne) d Micro-cell mode, OCB (Optically Compensated ed Birefringence mode, FLC (Ferroelectric L Liquid Crystal mode, AFLC (AntiFerroelectric) Liquid Crystal mode, ECB (Electrically Controlled Bias Current) Trolled Birefringence mode, guest host mode, etc. are applied. A liquid crystal element having such a structure can be used.

[0212] The liquid crystal element is a device that controls the transmission or non-transmission of light by the optical modulation action of the liquid crystal. The optical modulation effect of the liquid crystal is due to the electric field applied to the liquid crystal (horizontal electric field, vertical electric field). The liquid crystal used in the liquid crystal element is controlled by a These include thermotropic liquid crystal, low molecular weight liquid crystal, high molecular weight liquid crystal, and polymer dispersed liquid crystal (PDLC) : Polymer Dispersed Liquid Crystal), polymer network Network Liquid Crystal (PNLC) tal), ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. Depending on the conditions, cholesteric phase, smectic phase, cubic phase, chiral nematic phase, etc. It shows the crystalline phase, isotropic phase, etc.

[0213] The liquid crystal material may be either a positive type liquid crystal or a negative type liquid crystal. The optimum liquid crystal material may be selected depending on the mode and design to be applied.

[0214] In addition, an alignment film can be provided to control the alignment of the liquid crystal. When employed, a liquid crystal that exhibits a blue phase without using an alignment film may be used. When the temperature of cholesteric liquid crystal is increased, the phase changes from the cholesteric phase to the isotropic phase. The blue phase appears only in a narrow temperature range, so it is difficult to distinguish between the two. In order to improve the range, a liquid crystal composition containing a chiral agent of several weight percent or more is used in the liquid crystal layer. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response time and exhibits optically isotropic Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment. Furthermore, since no alignment film is required, rubbing treatment is not required. This prevents electrostatic damage caused by rubbing, and This can reduce defects and damage to the liquid crystal display device during the manufacturing process.

[0215] The liquid crystal element may be a transmissive liquid crystal element, a reflective liquid crystal element, or a semi-transmissive liquid crystal element. There are elements, etc.

[0216] In one embodiment of the present invention, a transmissive liquid crystal element can be particularly suitably used.

[0217] When using a transmissive or semi-transmissive liquid crystal element, two polarizing A backlight is provided outside the polarizing plate. It may be a direct-type backlight or an edge-light type backlight. Direct backlight with LED (Light Emitting Diode) This makes local dimming easier and increases contrast. In addition, when an edge-light type backlight is used, the module including the backlight can be displayed. This is preferable because it allows the thickness of the module to be reduced.

[0218] In addition, by turning off the edge-lit backlight, a see-through display is achieved. It is possible.

[0219] [Colored layer] Materials that can be used for the coloring layer include metal materials, resin materials, pigments, and dyes. Examples include resin materials.

[0220] [Light blocking layer] Materials that can be used for the light-shielding layer include carbon black, titanium black, Examples of the light-shielding layer include metals, metal oxides, and composite oxides including solid solutions of multiple metal oxides. The film may be a film containing a resin material, or may be a thin film made of an inorganic material such as a metal. In addition, the light-shielding layer may be a laminated film of films containing the material of the colored layer. A film containing a material used for a colored layer that transmits light and a material used for a colored layer that transmits light of another color. By using the same material for the colored layer and the light-shielding layer, a laminated structure with a film containing This is preferable because it allows the use of common equipment and simplifies the process.

[0221] The above is a description of the components.

[0222] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0223] (Embodiment 2) In this embodiment, an input device (touch sensor) that can be applied to the display device of one embodiment of the present invention will be described. and a configuration example of an input / output device (touch panel) that is an example of a display device of one embodiment of the present invention. and explain.

[0224] [Touch sensor configuration example] An example of the configuration of the input device (touch sensor) will be described below with reference to the drawings.

[0225] 17A shows a schematic top view of the input device 550. The input device 550 includes a substrate 560 A plurality of conductive layers 551, a plurality of conductive layers 552, a plurality of wirings 555, and a plurality of wirings 556 are provided on the The substrate 560 also has a plurality of conductive layers 551 and a plurality of conductive layers 552. In FIG. 17(A), the FPC 557 is provided with An example in which IC558 is provided is shown.

[0226] 17(B) is an enlarged view of the area surrounded by the dashed line in FIG. 17(A). 1 has a shape in which multiple diamond-shaped electrode patterns are connected in a horizontal direction. The diamond-shaped electrode patterns are electrically connected to each other. Similarly, the conductive layer 552 is A plurality of diamond-shaped electrode patterns are arranged in a vertical direction, and the diamond-shaped electrode patterns are arranged in a row. The turns are electrically connected to each other. A part of these overlaps and crosses each other. At this crossing part, conductive layer 551 and conductive layer 55 An insulator is sandwiched between them to prevent an electrical short circuit.

[0227] 17(C), a plurality of diamond-shaped conductive layers 552 are formed on the conductive layer 5 The island-shaped conductive layers 552 may be arranged in a vertical direction. The conductive layer 553 electrically connects two adjacent conductive layers 552. With this structure, the conductive layer 551 and the conductive layer 552 can be formed from the same conductive film. Therefore, the variations in the film thickness can be suppressed. This can prevent the resistance value and light transmittance of each electrode from varying depending on the location. Here, the conductive layer 552 has a structure including the conductive layer 553. However, if the conductive layer 551 has such a structure, It may be a configuration.

[0228] 17(D), the conductive layer 551 and the conductive layer 55 shown in FIG. 17(B) are The inside of the diamond-shaped electrode pattern in 2 may be hollowed out, leaving only the outline. At this time, the width of the conductive layer 551 and the conductive layer 552 is set to be thin enough not to be visible to the user. In this case, the conductive layer 551 and the conductive layer 552 may be made of a light-shielding material such as a metal or an alloy, as will be described later. In addition, the conductive layer 551 or the conductive layer 552 shown in FIG. A conductive layer 553 may be provided.

[0229] One conductive layer 551 is electrically connected to one wiring 555. 552 is electrically connected to one wiring 556. Here, the conductive layer 551 and the conductive layer 5 One of the wirings 52 corresponds to a row wiring, and the other corresponds to a column wiring.

[0230] IC558 has the function of driving the touch sensor. Signal output from IC558 is connected to either the conductive layer 551 or the conductive layer 552 via the wiring 555 or the wiring 556. Also, a current (or potential) flowing through either the conductive layer 551 or the conductive layer 552 is supplied. ) is input to IC 558 via wiring 555 or wiring 556.

[0231] Here, when the input device 550 is placed on the display surface of the display panel to form a touch panel, In this case, a light-transmitting conductive material is preferably used for the conductive layer 551 and the conductive layer 552. In addition, a light-transmitting conductive material is used for the conductive layer 551 and the conductive layer 552, and the conductive layer 552 is When light is extracted through the conductive layer 551 or the conductive layer 552, the conductive layer 551 and the conductive layer 552 are A conductive film containing the same conductive material is disposed as a dummy pattern between the layer 552 and the conductive film. In this way, it is preferable to fill a part of the gap between the conductive layer 551 and the conductive layer 552 with a dummy pattern. By filling the gap with the lines, the variation in light transmittance can be reduced. The unevenness in brightness of light passing through 50 can be reduced.

[0232] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide doped with gallium are used. It is also possible to use a film containing graphene. For example, it can be formed by reducing a film containing graphene oxide. A method of applying heat can be given.

[0233] Alternatively, a metal or alloy thin enough to have light transmission properties can be used. , silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt Metals such as titanium, copper, palladium, or titanium alloys containing such metals can be used. Alternatively, nitrides of the metals or alloys (for example, titanium nitride) may be used. Furthermore, a laminated film in which two or more conductive films containing the above-mentioned materials are laminated may be used.

[0234] In addition, the conductive layers 551 and 552 are thin enough to be invisible to the user. For example, such a conductive film may be processed into a lattice (mesh) shape. By doing so, high conductivity and high visibility of the display device can be obtained. 30 nm or more and 100 μm or less, preferably 50 nm or more and 50 μm or less, more preferably 5 It is preferable that the width of the portion is 0 nm or more and 20 μm or less. A conductive film having a pattern width is preferable because it is extremely difficult for a user to visually recognize the conductive film.

[0235] As an example, FIGS. 18A to 18D show a case where a part of the conductive layer 551 or the conductive layer 552 is expanded. FIG. 18(A) shows an example in which a lattice-shaped conductive film 546 is used. At this time, the conductive film 546 is formed so as not to overlap with a display element of the display device. This is preferable because it does not block the light from the display device. The direction of the grid is the same as the arrangement of the display elements, and the period of the grid is an integer number of the period of the arrangement of the display elements. Preferably, it is doubled.

[0236] Also, in FIG. 18(B), a lattice-shaped conductive film is processed so that triangular openings are formed. 18(A) shows an example of 547. By adopting such a configuration, Therefore, it is possible to reduce the overall resistance.

[0237] Also, as shown in FIG. 18(C), a conductive film 54 having a pattern shape without periodicity 8. With this configuration, when the display unit of the display device is superimposed, moire is prevented. This can prevent the following from occurring.

[0238] Alternatively, conductive nanowires may be used for the conductive layers 551 and 552. (D) shows an example in which a nanowire 549 is used. By distributing the particles at an appropriate density so that they come into contact with each other, a two-dimensional network is formed. The film can function as a highly transparent conductive film. The value is 1 nm or more and 100 nm or less, preferably 5 nm or more and 50 nm or less, more preferably 5 Nanowires having a diameter of 25 nm or more can be used. Metal nanowires such as Ag nanowires, Cu nanowires, and Al nanowires, or carbon nanowires For example, Ag nanowires have a light transmittance of It is possible to achieve a sheet resistance of 89% or more and 40Ω / □ or more and 100Ω / □ or less.

[0239] The above is a description of an example of the configuration of the touch sensor.

[0240] [Touch panel configuration example] There is no limitation on the detection element (also referred to as a sensor element) included in the touch panel of one embodiment of the present invention. We have a variety of sensors that can detect the proximity or contact of a finger, stylus, or other object. , can be applied as a sensing element.

[0241] For example, the sensor types include capacitance type, resistive film type, surface acoustic wave type, and infrared type. Various methods can be used, such as a pressure-sensitive method, an optical method, or the like.

[0242] In this embodiment, a touch panel having a capacitance type detection element will be described as an example. do.

[0243] The capacitance type includes the surface capacitance type and the projected capacitance type. The shadow capacitance method includes the self-capacitance method and the mutual capacitance method. This is preferable because it enables simultaneous multi-point detection.

[0244] The touch panel according to one embodiment of the present invention is formed by bonding a display device and a sensing element that are separately manufactured. The display element is supported by a substrate supporting the display element and / or an opposing substrate. Various configurations can be applied, such as a configuration in which a pole or the like is provided.

[0245] [Configuration example] 19(A) is a perspective schematic diagram of a touch panel 420A. (A) is an exploded perspective schematic diagram. For clarity, only representative components are shown. In FIG. 19(B), some components (such as the substrate 430 and the substrate 472) are outlined by dashed lines. This is clearly stated.

[0246] The touch panel 420A has an input device 410 and a display device 470, which are superimposed on each other. Therefore, the touch panel 420A is called an out-cell type touch panel. You can do it.

[0247] The display device described in Embodiment 1 can be used as the display device 470. The touch panel 420A has an extremely high aperture ratio and consumes low power. .

[0248] The input device 410 includes a substrate 430, electrodes 431, electrodes 432, a plurality of wirings 441, and a plurality of The FPC 450 has a plurality of wirings 441 and a plurality of wirings 442. FPC450 is equipped with IC451.

[0249] The display device 470 has a substrate 471 and a substrate 472 that are provided opposite to each other. The substrate 470 includes a display portion 481 and a driver circuit portion 482. The wiring 407 is provided on the substrate 471. The FPC 473 is electrically connected to the wiring 407. is equipped with IC474.

[0250] The touch panel 420 shown in FIG. 19(A) includes an FPC 473, an IC 474, and an FPC 450. Since it is equipped with IC451 and other components, it can also be called a touch panel module. do.

[0251] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0252] (Embodiment 3) The pixel circuits that drive the liquid crystal elements use oxide semiconductors, and the transistors have extremely low off-state current. It is preferable to use a transistor. Alternatively, a memory element may be used in the pixel circuit. This allows the writing operation to the pixels to be stopped when displaying a still image using the liquid crystal element. In other words, it is possible to maintain the gradation even when the frame rate is extremely low. This allows for extremely low power consumption display. .

[0253] The following describes the operation modes that can be performed with the liquid crystal element, with reference to FIG. cormorant.

[0254] In the following, we will use the normal frame frequency (typically 30Hz to 240Hz, or Normal mode (operating at a frequency between 60Hz and 240Hz) ) and Idling Stop (IDS) drive mode, which operates at a slow frame frequency. , will be explained as an example.

[0255] In addition, the Idling Stop (IDS) driving mode is the image data writing process. This is a driving method that stops rewriting of image data after executing the above. By writing the image data and then extending the interval until the next image data is written, This reduces the power consumption required to write image data during idling. The IDS drive mode is, for example, 1 / 100 to 1 / 10 of the normal operation mode. The frame frequency can be set to about 100 Hz.

[0256] Figure 20 (A) (B) (C) shows the normal driving mode and the idle stop (IDS) driving mode. 20A is a circuit diagram and a timing chart for explaining the operation mode. A liquid crystal element 601 (here, a transmissive liquid crystal element) and a display element electrically connected to the liquid crystal element 601. 20A, the pixel circuit 606 is shown. a signal line SL, a gate line GL, and a transistor M1 connected to the signal line SL and the gate line GL; and the capacitance element Cs connected to the transistor M1 LC The figure illustrates the above.

[0257] The transistor M1 is a transistor having a metal oxide in a semiconductor layer. A transistor having a metal oxide is preferably used for amplification, rectification, and switching. When the metal oxide has at least one of the functions, the metal oxide is called a metal oxide semiconductor. oxide semiconductor) or oxide sem The following are representative examples of transistors: The following description will be given using a transistor including an oxide semiconductor (OS transistor). Since the leakage current (off-state current) of the S transistor is extremely low when it is off, By making the transistor non-conductive, it is possible to hold charge in the pixel electrode of the liquid crystal element. .

[0258] In the circuit diagram shown in FIG. 20(A), the liquid crystal element LC is a leak path for the data D1. Therefore, in order to perform the idling stop drive properly, the resistance of the liquid crystal element LC Rate 1.0×10 14 It is preferable to set it to Ω·cm or more.

[0259] The channel region of the OS transistor may be formed of, for example, In—Ga—Zn oxide, In-Zn oxide and the like can be preferably used. The atomic ratio is typically in the vicinity of In:Ga:Zn=1:1:1, or In: A composition in the vicinity of Ga:Zn=4:2:3 [atomic ratio] can be used.

[0260] FIG. 20B shows the signal lines SL and gate lines GL in the normal drive mode. 10 is a timing chart showing waveforms of signals applied to the normal frame in the normal driving mode. The period T1 to T3 is shown in FIG. 20(B). During a frame period, a scanning signal is applied to the gate line GL, and data D1 is written from the signal line SL. This operation is performed when the same data D1 is written from the period T1 to T3, or The same applies when writing different data.

[0261] On the other hand, FIG. 20(C) shows the signal line SL in the idle stop (IDS) driving mode. 10 is a timing chart showing waveforms of signals applied to the gate lines GL and GL. Idling Stop (IDS) drive operates at a low frame frequency (for example, 1 Hz or less). One frame period is represented by a period T1, and the data writing period is represented by a period T W , the data retention period is period T RET Idling Stop (IDS) driving mode The period T W A scanning signal is applied to the gate line GL, and data D1 is written to the signal line SL. Period T RET The gate line GL is fixed to a low level voltage, and the transistor M1 is put into a non-conducting state. The data D1 that was written once is held as a state. For example, the frequency is between 0.1 Hz and 60 Hz, or between 0.1 Hz and 30 Hz. This can be done as follows.

[0262] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0263] (Fourth embodiment) In this embodiment, a display module that can be manufactured using one embodiment of the present invention will be described. and explain.

[0264] The display module 6000 shown in FIG. 21(A) includes an upper cover 6001 and a lower cover 6002. Between the FPC 6005 and the display panel 6006, the frame 6009, and the It has a print substrate 6010 and a battery 6011.

[0265] For example, a display device manufactured using one embodiment of the present invention is used for the display panel 6006. The display panel 6006 can be configured to include a polarizing plate and a backlight. It is possible to realize a display module with extremely low power consumption.

[0266] The upper cover 6001 and the lower cover 6002 are made to fit the size of the display panel 6006. The shape and dimensions can be changed as needed.

[0267] A touch panel may be provided over the display panel 6006. In this case, a resistive or capacitive touch panel is superimposed on the display panel 6006. In addition, a touch panel may not be provided, and the display panel 6006 may have a touch panel function. It is also possible to make it have the ability.

[0268] The frame 6009 has a function of protecting the display panel 6006 and also a function of preventing the movement of the printed circuit board 6010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the The frame 6009 may also function as a heat sink.

[0269] The printed circuit board 6010 includes a power supply circuit, a signal circuit for outputting a video signal and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 6011 provided separately. This can be omitted if a commercial power source is used.

[0270] FIG. 21(B) is a schematic cross-sectional view of a display module 6000 equipped with an optical touch sensor. is.

[0271] The display module 6000 includes a light emitting section 6015 and a receiving section 6016 provided on a printed circuit board 6010. The optical unit 6016 is enclosed by an upper cover 6001 and a lower cover 6002. The region has a pair of light guide portions (light guide portion 6017a, light guide portion 6017b).

[0272] The upper cover 6001 and the lower cover 6002 can be made of, for example, plastic. In addition, the upper cover 6001 and the lower cover 6002 are each thin (for example, 0. Therefore, the display module 6000 can be extremely Furthermore, it is possible to make the upper cover 6001 and the lower cover 6002 with less material. Since it is possible to produce 002, the production cost can be reduced.

[0273] The display panel 6006 is connected to a printed circuit board 6010 and a battery via a frame 6009. The display panel 6006 and the frame 6009 are disposed on top of the light guide unit 6011. 6017a and fixed to the light guide portion 6017b.

[0274] Light 6018 emitted from the light emitting unit 6015 is guided to the display panel 60 by the light guiding unit 6017a. 6017b and reaches the light receiving part 6016. When the light 6018 is blocked by a detection object such as a stylus, a touch operation is detected. It is possible.

[0275] A plurality of light emitting units 6015 are provided along two adjacent sides of the display panel 6006, for example. A plurality of light receiving sections 6016 are provided at positions facing the light emitting sections 6015. It is possible to obtain information about the position where the touch operation was performed.

[0276] The light emitting unit 6015 can be a light source such as an LED element. 6015, a light that emits infrared rays that are invisible to the user and harmless to the user. It is preferred to use a source.

[0277] The light receiving section 6016 is a photoelectric element that receives the light emitted by the light emitting section 6015 and converts it into an electrical signal. Preferably, a photodiode capable of receiving infrared rays can be used. can.

[0278] The light guide portions 6017a and 6017b are made of a material that transmits at least the light 6018. By using the light guide portion 6017a and the light guide portion 6017b, the light emitting portion The light receiving unit 6015 and the light receiving unit 6016 can be disposed below the display panel 6006, and external light can be This can prevent visible light from reaching the light receiving section 6016 and causing the touch sensor to malfunction. It is preferable to use a resin that absorbs infrared rays and transmits infrared rays. This allows for more effective suppression of movement.

[0279] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0280] (Embodiment 5) In this embodiment, electronic devices to which the display device of one embodiment of the present invention can be applied will be described. .

[0281] The display device of one embodiment of the present invention can provide bright display and has high brightness regardless of the intensity of external light. Furthermore, the display device of one embodiment of the present invention can achieve low power consumption. Therefore, it is possible to use it in portable electronic devices, wearable electronic devices, and It can be suitably used in e-book terminals, television devices, digital signage, etc. do.

[0282] 22(A) and (B) show an example of a mobile information terminal 800. The mobile information terminal 800 has the following functions: The device includes a housing 801, a housing 802, a display unit 803, a display unit 804, a hinge unit 805, and the like. .

[0283] The housing 801 and the housing 802 are connected by a hinge part 805. The mobile information terminal 800 is 22(A) to the folded state, as shown in FIG. 22(B), the housing 801 The housing 802 can be opened.

[0284] For example, document information can be displayed on the display unit 803 and the display unit 804. It can also be used as a book terminal. It is also possible to display video images.

[0285] In this way, the portable information terminal 800 can be folded when carried around, making it suitable for general use. It is highly usable.

[0286] The housings 801 and 802 are provided with a power button, an operation button, an external connection port, a switch, and a It may also have a speaker, microphone, etc.

[0287] An example of a mobile information terminal is shown in FIG. 22(C). The mobile information terminal 810 shown in FIG. 22(C) is , a housing 811, a display unit 812, an operation button 813, an external connection port 814, a speaker 81 5, a microphone 816, a camera 817, etc.

[0288] The display unit 812 includes the display device of one embodiment of the present invention.

[0289] The mobile information terminal 810 has a touch sensor on the display unit 812. All operations, such as inputting characters, can be performed by touching the display 812 with a finger or a stylus. This can be done.

[0290] In addition, by operating the operation button 813, the power can be turned on and off, and the display unit 812 can be displayed. You can change the type of image displayed. For example, from the email creation screen, you can change the type of image displayed. You can switch to the new screen.

[0291] In addition, a detection device such as a gyro sensor or an acceleration sensor is installed inside the mobile information terminal 810. By providing this, the orientation (portrait or landscape) of the mobile information terminal 810 can be determined and the image of the display unit 812 can be displayed. You can also set the screen orientation to automatically change. The switching can be done by touching the display unit 812, operating the operation button 813, or using the microphone 816. This can also be done by voice input or the like.

[0292] The mobile information terminal 810 is, for example, one selected from a telephone, a notebook, an information viewing device, etc. Or it has multiple functions. Specifically, it can be used as a smartphone. The portable information terminal 810 can be used for, for example, mobile phone calls, e-mails, viewing and creating documents, playing music, and video. It can run various applications such as image playback, internet communication, and games. Cut.

[0293] 22(D) shows an example of a camera. The camera 820 includes a housing 821, a display unit 822, The camera 820 has an operation button 823, a shutter button 824, etc. A lens 826 is attached.

[0294] The display portion 822 includes the display device of one embodiment of the present invention.

[0295] Here, the camera 820 is a camera in which the lens 826 can be removed from the housing 821 and replaced. However, the lens 826 and the housing may be integrated.

[0296] The camera 820 takes still or moving images by pressing the shutter button 824. The display unit 822 has a function as a touch panel, and It is also possible to take a picture by touching 22.

[0297] The camera 820 can be equipped with a strobe device, a viewfinder, etc. Alternatively, these may be incorporated into the housing 821.

[0298] FIG. 23A shows a television device 830. The television device 830 has a display unit 831, a housing 832, a speaker 833, etc. Furthermore, LED lamps, operation keys (electric power switch or operation switch), connection terminals, various sensors, microphones, etc. It can have.

[0299] The television device 830 can be operated by a remote control 834. .

[0300] The television device 830 can receive broadcast waves from terrestrial or satellite sources. In addition, broadcasting waves include analog broadcasting and digital broadcasting. There are also broadcasts that include video and audio, or audio only. For example, UHF band (approximately 300 MHz to 3GHz) or a specific frequency in the VHF band (30MHz to 300MHz) It is possible to receive broadcast radio waves transmitted in the band.

[0301] The television device 830 may, for example, use multiple pieces of data received in multiple frequency bands. This allows for a higher transfer rate and more information to be obtained. By this, an image having a resolution exceeding full high definition can be displayed on the display unit 831. For example, 4K2K, 8K4K, 16K8K, or higher resolutions are possible. The image can be displayed.

[0302] The television device 830 may also be connected to the Internet or a LAN (Local Area Network). Network), Wi-Fi (registered trademark), etc. The image to be displayed on the display unit 831 is generated using broadcast data transmitted by data transmission technology. In this case, the television device 830 does not need to have a tuner. good.

[0303] FIG. 23(B) shows a digital signage 840 attached to a cylindrical pole 842. The digital signage 840 includes a display unit 841.

[0304] The larger the display area 841, the more information can be provided at one time. The wider the part 841, the more noticeable it is, and for example, the more effective the advertisement can be. do.

[0305] By applying a touch panel to the display unit 841, images or videos are displayed on the display unit 841. It is also preferable because it allows users to operate it intuitively. When used for providing information such as traffic information, the user can operate the device intuitively. This can improve accessibility.

[0306] FIG. 23(C) shows a notebook personal computer 850. The computer 850 includes a display unit 851, a housing 852, a touchpad 853, and a connection port 85 He has a 4th place.

[0307] The touchpad 853 can be used as a pointing device, a pen tablet, or other input means. It functions as a touchscreen and can be operated with a finger or a stylus.

[0308] In addition, a display element is incorporated into the touch pad 853. As shown in FIG. By displaying input keys 855 on the surface of the touchpad 853, the touchpad 853 can be used as a keyboard. In this case, when the input key 855 is touched, A vibration module is built into the touchpad 853 to provide a tactile sensation through movement. Good too.

[0309] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0310] 10 Display device 11 Circuit Board 12 PCB 13 Display section 13B Display area 13G display area 13R display area 14 circuits 15 Wiring 16 FPC 17 IC 20 Liquid crystal element 20B Liquid crystal element 20G liquid crystal element 20R liquid crystal element 21 Conductive layer 22 LCD 23 Conductive layer 24a Alignment film 24b Alignment film 25B light 25G light 25R light 26 Insulating layer 30 transistors 30a transistor 30B transistor 30G transistor 30R transistor 31 Conductive layer 31a conductive layer 32 Semiconductor layer 32a Low resistance area 33 Conductive layer 34 Insulating layer 39a Polarizing plate 39b Polarizing plate 40 pixels 40B subpixel 40G subpixel 40R subpixel 40W subpixel 40s shading area 40t transmission area 40U pixel unit 41B Colored layer 41G colored layer 41R colored layer 42 Light blocking layer 51 Wiring 51a Wiring 51b Wiring 51B wiring 51G wiring 51R wiring 52 Wiring 52a wiring 52b Wiring 52B wiring 52G wiring 52R wiring 53 Wiring 55 Intersection 57 Light blocking layer 58 Light blocking layer 60B Capacitor 60G Capacitive Element 60R capacitor element 81 Insulating layer 82 Insulating layer 83 Insulating layer 90 Backlight unit 407 Wiring 410 Input Device 420 Touch Panel 420A Touch Panel 430 board 431 Electrode 432 Electrode 441 Wiring 442 Wiring 450 FPC 451 IC 470 Display device 471 Circuit Board 472 PCB 473 FPC 474 IC 481 Display section 482 Drive circuit section 546 Conductive Film 547 Conductive Film 548 Conductive Film 549 Nanowires 550 Input Device 551 Conductive layer 552 Conductive layer 553 Conductive layer 555 Wiring 556 Wiring 557 FPC 558 IC 560 board 601 Liquid crystal element 606 pixel circuit 800 Mobile Information Terminals 801 Case 802 chassis 803 Display section 804 Display section 805 Hinge part 810 Mobile Information Terminals 811 Case 812 Display section 813 Operation button 814 external connection port 815 Speaker 816 Mike 817 Camera 820 Camera 821 Case 822 Display section 823 Operation Button 824 shutter button 826 Lens 830 Television equipment 831 Display section 832 Case 833 Speaker 834 Remote Controlled Machine 840 Digital Signage 841 Display section 842 pillars 850 Personal Computers 851 Display section 852 Case 853 Touchpad 854 connection port 855 input keys 6000 Display Module 6001 Top cover 6002 Lower cover 6005 FPC 6006 Display Panel 6009 Frame 6010 printed circuit board 6011 Battery 6015 Light-emitting part 6016 Light receiving section 6017a Light guiding part 6017b Light guiding part 6018 light

Claims

1. a first colored layer, a second colored layer, a first transistor, a second transistor, a first display element, and a second display element; the first display element is electrically connected to the first transistor and overlaps with the first coloring layer; the second display element is electrically connected to the second transistor and overlaps with the second coloring layer; the first transistor has a first semiconductor layer; the second transistor has a second semiconductor layer; the first semiconductor layer and the second semiconductor layer each have a portion overlapping with the first colored layer; Display device.

2. a first colored layer, a second colored layer, a third colored layer, a first transistor, a second transistor, a third transistor, a first display element, a second display element, and a third display element; the first display element is electrically connected to the first transistor and overlaps with the first coloring layer; the second display element is electrically connected to the second transistor and overlaps with the second coloring layer; the third display element is electrically connected to the third transistor and overlaps with the third coloring layer; the first transistor has a first semiconductor layer; the second transistor has a second semiconductor layer; the third transistor has a third semiconductor layer; the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer each have a portion overlapping with the first colored layer; Display device.

3. In claim 1 or claim 2, the first colored layer transmits light of a longer wavelength than the second colored layer; Display device.

4. In any one of claims 1 to 3, the first colored layer transmits red light; Display device.

5. In any one of claims 1 to 4, A light source that emits white light, the first colored layer is located between the light source and the first semiconductor layer and between the light source and the second semiconductor layer; Display device.

6. In any one of claims 1 to 5, the first transistor has a first gate electrode, and a first electrode and a second electrode connected to the first semiconductor layer; the second transistor has a second gate electrode, and a third electrode and a fourth electrode connected to the second semiconductor layer; the first electrode, the second electrode, the third electrode, and the fourth electrode each transmit visible light and have a portion overlapping with the first colored layer; Display device.

7. In claim 6, the first gate electrode and the second gate electrode each transmit visible light and have a portion overlapping the first colored layer; Display device.

8. In claim 6, the first gate electrode and the second gate electrode each block visible light; Display device.

9. In any one of claims 6 to 8, a first wiring and a second wiring; the first electrode is electrically connected to the first wiring; the second electrode is electrically connected to the first display element; the third electrode is electrically connected to the second wiring; the fourth electrode is electrically connected to the second display element; the fourth electrode has a portion that intersects with the second wiring; Display device.

10. In any one of claims 6 to 8, a first wiring and a second wiring; the first electrode is electrically connected to the first wiring; the second electrode is electrically connected to the first display element; the third electrode is electrically connected to the second wiring; the fourth electrode is electrically connected to the second display element; the fourth electrode has a portion intersecting with the first wiring and a portion intersecting with the second wiring; Display device.

11. In any one of claims 1 to 5, a first wiring and a second wiring; the first transistor has a first gate electrode; the second transistor has a second gate electrode; the first semiconductor layer has a portion overlapping with the first gate electrode and a portion connected to the first wiring, the second semiconductor layer has a portion overlapping with the second gate electrode, a portion connected to the second wiring, and a portion intersecting with the second wiring; Display device.

12. In any one of claims 1 to 5, a first wiring and a second wiring; the first transistor has a first gate electrode; the second transistor has a second gate electrode; the first semiconductor layer has a portion overlapping with the first gate electrode and a portion connected to the first wiring, the second semiconductor layer has a portion overlapping with the second gate electrode, a portion connected to the second wiring, a portion intersecting with the second wiring, and a portion intersecting with the first wiring; Display device.

13. In any one of claims 1 to 12, the first semiconductor layer and the second semiconductor layer each contain a metal oxide; Display device.

14. In any one of claims 1 to 13, the first display element has a fifth electrode, a sixth electrode, and a liquid crystal; the fifth electrode is electrically connected to the first transistor; the fifth electrode and the sixth electrode each transmit visible light; Display device.

Images