Semiconductor device

Abstract

To provide a semiconductor device that can reduce inductance.SOLUTION: A semiconductor device 1 includes a substrate 10 having a main surface 10a, a semiconductor element 40 mounted on the main surface 10a of the substrate 10, a driving pad 21, and a plurality of driving wires 60. The semiconductor element 40 includes a surface 40a facing the same direction as the main surface 10a of the substrate 10 and a driving electrode 41 formed on the surface 40a, and contains SiC. The driving wires 60 connect the driving electrode 41 and the driving pad 21 while the wires remain apart from each other. The driving wires 60 include a first driving wire 61 and a second driving wire 62 forming the combination that the wires are the most apart. When viewed from a first direction perpendicular to the main surface 10a of the substrate 10, the first driving wire 61 and the second driving wire 62 are connected to the driving electrode 41 and the driving pad 21 so that the wires are more apart on the driving pad 21 side than on the driving electrode 41 side.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] The semiconductor device comprises a substrate, a semiconductor element such as a power transistor mounted on the substrate, a drive lead having a drive pad connected to a source electrode of the semiconductor element via a plurality of drive wires, a control lead having a control pad connected to a gate electrode of the semiconductor element via a control wire, and a sealing resin that seals at least the semiconductor element (see, for example, Patent Documents 1 and 2). In Patent Document 2, the drive lead comprises a drive terminal protruding from the sealing resin. The semiconductor element is connected to the substrate by solder. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-174951 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-152242

[0004] [overview] For example, in the semiconductor device of Patent Document 1, three drive wires are arranged adjacent to each other with a slight gap between them. Therefore, although the inductance can be reduced compared to a configuration with a single drive wire by connecting three drive wires to a source electrode and a drive pad, there is still room for improvement in reducing the inductance caused by the relative arrangement of multiple drive wires. Note that this problem is not limited to switching elements, and may also occur in semiconductor devices that include diodes instead of switching elements.

[0005] In addition, for example, in the semiconductor device of Patent Document 2, the substrate is exposed from the back surface of the sealing resin, thereby improving the heat dissipation of the semiconductor element. However, because the substrate is exposed from the back surface of the sealing resin, there is room for improvement in terms of the dielectric strength between the drive terminal and the substrate.

[0006] A semiconductor device according to one aspect of the present disclosure includes a substrate having a main surface, a surface mounted on the main surface and facing the same direction as the main surface, and a drive electrode formed on the surface, the semiconductor element including SiC, a drive pad, and a plurality of drive wires connecting the drive electrode and the drive pad while being spaced apart from each other, the plurality of drive wires including a first drive wire and a second drive wire that form the most spaced-apart combination, and the first drive wire and the second drive wire are connected to the drive electrode and the drive pad so that the drive pad side is farther away than the drive electrode side when viewed from a first direction that is perpendicular to the main surface. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment. [Figure 2] FIG. 2 is a plan view showing the internal structure of the semiconductor device of FIG. [Figure 3] FIG. 3 is a rear view of the semiconductor device of FIG. [Figure 4] FIG. 4 is a schematic cross-sectional view taken along line 4-4 in FIG. [Figure 5] FIG. 5 is a schematic cross-sectional view taken along line 5-5 in FIG. [Figure 6] FIG. 6 is an enlarged view of the semiconductor element and its periphery shown in FIG. [Figure 7] FIG. 7 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the first embodiment. [Figure 8] FIG. 8 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the first embodiment. [Figure 9]FIG. 9 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the first embodiment. [Figure 10] FIG. 10 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the first embodiment. [Figure 11] FIG. 11 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the first embodiment. [Figure 12] FIG. 12 is a perspective view of the semiconductor device according to the second embodiment. [Figure 13] FIG. 13 is a plan view showing the internal structure of the semiconductor device of FIG. [Figure 14] FIG. 14 is a rear view of the semiconductor device of FIG. [Figure 15] FIG. 15 is an enlarged view of the semiconductor element and its periphery shown in FIG. [Figure 16] FIG. 16 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the second embodiment. [Figure 17] FIG. 17 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the second embodiment. [Figure 18] FIG. 18 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the second embodiment. [Figure 19] FIG. 19 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the second embodiment. [Figure 20] FIG. 20 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the second embodiment. [Figure 21] FIG. 21 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the second embodiment. [Figure 22] FIG. 22 is a perspective view of the semiconductor device of the third embodiment. [Figure 23] FIG. 23 is a plan view showing the internal structure of the semiconductor device of FIG. [Figure 24] FIG. 24 is a rear view of the semiconductor device of FIG. [Figure 25]FIG. 25 is an enlarged view of the semiconductor element and its periphery in FIG. [Figure 26] FIG. 26 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the third embodiment. [Figure 27] FIG. 27 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the third embodiment. [Figure 28] FIG. 28 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the third embodiment. [Figure 29] FIG. 29 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the third embodiment. [Figure 30] FIG. 30 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the third embodiment. [Figure 31] FIG. 31 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of the third embodiment. [Figure 32] FIG. 32 is a plan view showing the internal structure of the semiconductor device of the fourth embodiment. [Figure 33] FIG. 33 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the fourth embodiment. [Figure 34] FIG. 34 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of each embodiment. [Figure 35] FIG. 35 is a perspective view of the semiconductor device of the fifth embodiment. [Figure 36] FIG. 36 is a plan view showing the internal structure of the semiconductor device of FIG. [Figure 37] FIG. 37 is a rear view of the semiconductor device of FIG. [Figure 38] FIG. 38 is a schematic cross-sectional view taken along line 38-38 in FIG. [Figure 39] FIG. 39 is a schematic cross-sectional view taken along line 39-39 in FIG. [Figure 40] FIG. 40 is an enlarged view of the semiconductor element and its periphery in FIG. [Figure 41]FIG. 41 is a plan view of a semiconductor device of a comparative example. [Figure 42] FIG. 42 is a schematic cross-sectional view of FIG. [Figure 43] FIG. 43 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the fifth embodiment. [Figure 44] FIG. 44 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the fifth embodiment. [Figure 45] FIG. 45 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the fifth embodiment. [Figure 46] FIG. 46 is a perspective view of the semiconductor device of the fifth embodiment. [Figure 47] FIG. 47 is a plan view showing the internal structure of the semiconductor device of FIG. [Figure 48] FIG. 48 is a rear view of the semiconductor device of FIG. [Figure 49] FIG. 49 is a schematic cross-sectional view taken along line 49-49 in FIG. [Figure 50] FIG. 50 is a schematic cross-sectional view taken along line 50-50 in FIG. [Figure 51] FIG. 51 is an enlarged view of the semiconductor element and its periphery in FIG. [Figure 52] FIG. 52 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the sixth embodiment. [Figure 53] FIG. 53 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the sixth embodiment. [Figure 54] FIG. 54 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the sixth embodiment. [Figure 55] FIG. 55 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the sixth embodiment. [Figure 56] FIG. 56 is a schematic cross-sectional view of a semiconductor device according to a modification of the sixth embodiment. [Figure 57]FIG. 57 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of the sixth embodiment. [Figure 58] FIG. 58 is a schematic cross-sectional view taken along line 58-58 in FIG. [Figure 59] FIG. 59 is an enlarged view of a semiconductor element and its periphery in a modified example of the semiconductor device of each embodiment. [Figure 60] FIG. 60 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of each embodiment. [Figure 61] FIG. 61 is a side view of the semiconductor device of FIG. [Figure 62] FIG. 62 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of each embodiment. [Figure 63] FIG. 63 is an enlarged view of a semiconductor element and its periphery in a modification of the semiconductor device of each embodiment. [Figure 64] FIG. 64 is a schematic cross-sectional view of a semiconductor device according to a modification of the semiconductor device of each embodiment. [Figure 65] FIG. 65 is a schematic cross-sectional view of a semiconductor device according to a modification of the semiconductor device of each embodiment.

[0008] [Detailed explanation] Hereinafter, embodiments of a semiconductor device will be described with reference to the drawings. The embodiments shown below are intended to exemplify configurations and methods for embodying the technical ideas, and are not intended to limit the materials, shapes, structures, arrangements, dimensions, etc. of each component to those described below. Various modifications can be made to the following embodiments.

[0009] (First embodiment) A first embodiment of the semiconductor device will be described with reference to Figures 1 to 11. For convenience, hatching is omitted from the cross-sectional views of Figures 4 and 5.

[0010] As shown in FIG. 1, the semiconductor device 1 includes a substrate 10, a drive lead 20, a control lead 30, a semiconductor element 40 mounted on a main surface 10a of the substrate 10, and a sealing resin 50 that seals the semiconductor element 40. The drive lead 20 includes an outer lead 20A protruding from the sealing resin 50 and an inner lead 20B disposed within the sealing resin 50 and electrically connected to the outer lead 20A. In this embodiment, the outer lead 20A and the inner lead 20B are integrated into a single component. The control lead 30 includes an outer lead 30A protruding from the sealing resin 50 and an inner lead 30B disposed within the sealing resin 50 and electrically connected to the outer lead 30A. In this embodiment, the outer lead 30A and the inner lead 30B are integrated into a single component. The horizontal dimension L2 of the sealing resin 50 of the semiconductor device 1 is preferably 10 mm or less. The semiconductor device 1 of this embodiment is a package conforming to the JEITA package outline standard TO (Transistor Outline)-252. Specifically, the semiconductor device 1 has a vertical dimension L1 of 9.5 mm to 10.50 mm, a horizontal dimension L2 of 6.4 mm to 6.8 mm, and a thickness dimension L3 of 2.1 mm to 2.3 mm. The semiconductor device 1 is a so-called SIP (Single Inline Package) type in which the outer leads 20A of the drive leads 20 and the outer leads 30A of the control leads 30 each extend from one surface of the sealing resin 50.

[0011] As shown in FIG. 1 , the sealing resin 50 has a rectangular parallelepiped shape. The sealing resin 50 is a synthetic resin having electrical insulation properties. In one example, the sealing resin 50 is an epoxy resin. The sealing resin 50 has six surfaces: a first sealing resin side surface 51, a second sealing resin side surface 52, a third sealing resin side surface 53, a fourth sealing resin side surface 54, a sealing resin rear surface 55, and a sealing resin top surface 56. The first sealing resin side surface 51 and the second sealing resin side surface 52 face in opposite directions with a gap between them. The third sealing resin side surface 53 and the fourth sealing resin side surface 54 face in opposite directions with a gap between them. The sealing resin rear surface 55 and the sealing resin top surface 56 face in opposite directions with a gap between them. In the following description, the direction in which the sealing resin back surface 55 and the sealing resin top surface 56 are arranged is referred to as the thickness direction Z, the direction in which the first sealing resin side surface 51 and the second sealing resin side surface 52 are arranged is referred to as the vertical direction X, and the direction in which the third sealing resin side surface 53 and the fourth sealing resin side surface 54 are arranged is referred to as the horizontal direction Y. The vertical direction X and the horizontal direction Y are directions perpendicular to the thickness direction Z. The vertical direction X is a direction perpendicular to the horizontal direction Y. Here, the thickness direction Z corresponds to the first direction, the vertical direction X corresponds to the second direction, and the horizontal direction Y corresponds to the third direction.

[0012] The sealing resin 50 is formed by molding. Each side surface 51 to 54 of the sealing resin 50 has an inclined surface inclined with respect to the thickness direction Z to provide a draft angle that facilitates removal of a mold when molding the sealing resin 50. Specifically, each side surface 51 to 54 has a first inclined surface provided with a draft angle that facilitates removal of an upper die of the mold and a second inclined surface provided with a draft angle that facilitates removal of a lower die of the mold. The upper die of the mold forms the sealing resin top surface 56 and portions of each side surface 51 to 54 that face the sealing resin top surface 56. The lower die forms the sealing resin back surface 55 and portions of each side surface 51 to 54 that face the sealing resin back surface 55. In one example, as shown in FIGS. 4 and 5 , the first sealing resin side surface 51 has a first inclined surface 51 a and a second inclined surface 51 b. The first inclined surface 51 a is inclined toward the sealing resin top surface 56 and toward the second sealing resin side surface 52. The second inclined surface 51b is inclined toward the second sealing resin side surface 52 as it approaches the sealing resin back surface 55. The length of the first inclined surface 51a is longer than the length of the second inclined surface 51b. The second sealing resin side surface 52 has a first inclined surface 52a and a second inclined surface 52b. The first inclined surface 52a is inclined toward the first sealing resin side surface 51 as it approaches the sealing resin top surface 56. The second inclined surface 52b is inclined toward the first sealing resin side surface 51 as it approaches the sealing resin back surface 55. The length of the first inclined surface 52a is longer than the length of the second inclined surface 52b. The second inclined surface 52b is formed over the substrate 10 toward the sealing resin top surface 56. The lengths of the first inclined surface 51a and the second inclined surface 51b can each be changed as desired. The lengths of the first inclined surface 52a and the second inclined surface 52b can each be changed as desired.

[0013] Fig. 2 is a view of the semiconductor device 1 viewed from the sealing resin top surface 56 in the thickness direction Z. For convenience, in Fig. 2, the sealing resin 50 is shown by a two-dot chain line, and the components inside the sealing resin 50 are shown by a solid line. 2, when the semiconductor device 1 is viewed from the sealing resin top surface 56 in the thickness direction Z (hereinafter referred to as "plan view"), the shape of the sealing resin 50 is a substantially rectangular shape with the long side direction being the vertical direction X and the short side direction being the horizontal direction Y. In the plan view, the first sealing resin side surface 51 and the second sealing resin side surface 52 are side surfaces that extend along the horizontal direction Y, and the third sealing resin side surface 53 and the fourth sealing resin side surface 54 are side surfaces that extend along the vertical direction X.

[0014] The substrate 10 has a main surface 10a and a back surface 10b (see FIG. 3) facing opposite to each other in the thickness direction Z. The main surface 10a faces the same direction as the sealing resin top surface 56, and the back surface 10b faces the same direction as the sealing resin back surface 55. The substrate 10 is formed of, for example, aluminum (Al) or copper (Cu). The substrate 10 has a flat substrate main body 11 and lead portions 16. In this embodiment, the substrate main body 11 and lead portions 16 are integrated into a single component.

[0015] The substrate main body 11 can be divided into an inner main body 12 covered with the sealing resin 50 and a protruding portion 13 protruding from the sealing resin 50. The inner main body 12 and the protruding portion 13 are adjacent to each other in the vertical direction X. The protruding portion 13 protrudes in the vertical direction X from the first sealing resin side surface 51. In this embodiment, the size of the protruding portion 13 in the horizontal direction Y is smaller than the size of the inner main body 12 in the horizontal direction Y. Note that the size of the protruding portion 13 in the horizontal direction Y can be changed as desired. In one example, the size of the protruding portion 13 in the horizontal direction Y may be equal to the size of the inner main body 12 in the horizontal direction Y.

[0016] In a plan view, the inner main body portion 12 is disposed such that its center in the vertical direction X is closer to the first sealing resin side surface 51 than the center of the sealing resin 50 in the vertical direction X. The inner main body portion 12 has a main surface 12a, a back surface 12b (see FIG. 3 ), a first side surface 12c, a second side surface 12d, and a third side surface 12e. The main surface 12a and the back surface 12b face opposite each other in the thickness direction Z. The main surface 12a constitutes a part of the main surface 10a of the substrate 10, and the back surface 12b constitutes the back surface 10b of the substrate 10. Therefore, the main surface 12a faces the sealing resin top surface 56, and the back surface 12b faces the sealing resin back surface 55. The first side surface 12c faces the second sealing resin side surface 52, the second side surface 12d faces the third sealing resin side surface 53, and the third side surface 12e faces the fourth sealing resin side surface 54. The first side surface 12c extends along the horizontal direction Y. The second side surface 12d and the third side surface 12e face each other with a gap in between in the horizontal direction Y. The second side surface 12d and the third side surface 12e extend along the vertical direction X.

[0017] A narrow width portion 14 is formed at the end of the inner main body portion 12 on the protruding portion 13 side. The narrow width portion 14 is formed by a curved recess 14a recessed from the second side surface 12d toward the fourth sealing resin side surface 54 in the horizontal direction Y, and a curved recess 14b recessed from the third side surface 12e toward the third sealing resin side surface 53 in the horizontal direction Y. The size of the narrow width portion 14 in the horizontal direction Y is smaller than the size of the portion of the inner main body portion 12 other than the narrow width portion 14. The size of the narrow width portion 14 in the horizontal direction Y is also smaller than the size of the protruding portion 13 in the horizontal direction Y. The narrow width portion 14 is provided adjacent to the first sealing resin side surface 51 of the sealing resin 50 in the vertical direction X. The narrow width portion 14 is provided with a through hole 15 penetrating the narrow width portion 14 in the thickness direction Z. The shape of the through hole 15 in a plan view is an ellipse with the horizontal direction Y as the longitudinal direction.

[0018] The inner main body portion 12 is provided with a plurality of flange portions 19 that protrude from the side surfaces of the main body of the inner main body portion 12 . The multiple flange portions 19 include a first flange portion 19a, a second flange portion 19b, a third flange portion 19c, and a fourth flange portion 19d. The first flange portion 19a protrudes from the first side surface 12c of the inner main body portion 12 toward the second sealing resin side surface 52. The second flange portion 19b protrudes from the second side surface 12d of the inner main body portion 12 toward the third sealing resin side surface 53. The third flange portion 19c protrudes from the third side surface 12e of the inner main body portion 12 toward the fourth sealing resin side surface 54. The fourth flange portion 19d is provided at both ends of the narrow width portion 14 in the lateral direction Y and at a portion of the through hole 15 on the side of the second sealing resin side surface 52.

[0019] The first flange portion 19a, the second flange portion 19b, the third flange portion 19c, and the fourth flange portion 19d are each provided so as to be flush with the main surface 12a of the inner main body portion 12. Therefore, the main surface 10a of the substrate 10 is formed by the main surface 12a of the inner main body portion 12 and the first flange portion 19a, the second flange portion 19b, the third flange portion 19c, and the fourth flange portion 19d. Furthermore, the first flange portion 19a, the second flange portion 19b, the third flange portion 19c, and the fourth flange portion 19d are each provided so as to be closer to the main surface 12a than the back surface 12b of the inner main body portion 12. Therefore, the back surface 10b of the substrate 10 is formed by the back surface 12b of the inner main body portion 12. With this configuration of the flange portions 19a to 19d, separation between the substrate 10 and the sealing resin 50 can be suppressed.

[0020] 3, the back surface 10b of the substrate 10 (back surface 12b of the inner main body portion 12) is exposed from the sealing resin back surface 55. This improves the heat dissipation performance of the substrate 10. The sealing resin 50 fills the recesses 14a, 14b and the through-holes 15 of the narrow width portion 14 of the inner main body portion 12. This further prevents the substrate 10 and the sealing resin 50 from being separated.

[0021] 2 and 4, the lead portion 16 extends from the end of the inner main body portion 12 on the first side surface 12c side toward the second sealing resin side surface 52 and protrudes from the second sealing resin side surface 52. The lead portion 16 can be divided into a terminal portion 17 protruding from the second sealing resin side surface 52 and a connecting portion 18 connecting the terminal portion 17 and the inner main body portion 12.

[0022] The connecting portion 18 is located closer to the second side surface 12d than the center of the inner main body portion 12 in the horizontal direction Y. The connecting portion 18 is continuous with the first flange portion 19a. That is, the thickness of the portion of the connecting portion 18 connected to the first flange portion 19a is equal to the thickness of the first flange portion 19a. The connecting portion 18 has an inclined portion 18a. The inclined portion 18a is inclined toward the sealing resin top surface 56 as it extends from the first flange portion 19a toward the second sealing resin side surface 52. An intermediate portion 18b of the connecting portion 18 between the inclined portion 18a and the terminal portion 17 is located closer to the sealing resin top surface 56 than the main surface 12a of the inner main body portion 12. In a plan view, the intermediate portion 18b has a bent portion 18c that bends toward the fourth sealing resin side surface 54. The portion of the intermediate portion 18b that contacts the second sealing resin side surface 52 is located at the center of the second sealing resin side surface 52 in the horizontal direction Y.

[0023] The terminal portion 17 protrudes from the center of the second sealing resin side surface 52 in the lateral direction Y. In the thickness direction Z, the position of the terminal portion 17 is the same as the position of the intermediate portion 18b. That is, the terminal portion 17 is located closer to the sealing resin top surface 56 than the main surface 12a of the inner main body portion 12.

[0024] 2, in a plan view, the drive lead 20 and the control lead 30 are arranged closer to the second sealing resin side surface 52 of the sealing resin 50 than the substrate 10, while being spaced apart in the vertical direction X with respect to the substrate 10. The drive lead 20 and the control lead 30 are arranged while being spaced apart from each other in the horizontal direction Y. A lead portion 16 is arranged between the drive lead 20 and the control lead 30 in the horizontal direction Y.

[0025] The drive lead 20 has a drive pad 21, a drive terminal 22, and a connecting portion 23 that connects the drive pad 21 and the drive terminal 22. The drive pad 21 and the connecting portion 23 form an inner lead 20B, and the drive terminal 22 forms an outer lead 20A. The drive pad 21 and the connecting portion 23 are arranged between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The drive pad 21 and the connecting portion 23 are arranged closer to the fourth sealing resin side surface 54 than the center of the sealing resin 50 in the horizontal direction Y.

[0026] The drive pad 21 has a generally rectangular shape in plan view, with its longer side aligned in the horizontal direction Y and its shorter side aligned in the vertical direction X. The drive pad 21 has a first end 21a and a second end 21b, which are opposite ends in the horizontal direction Y. The first end 21a is the end of the drive pad 21 that faces the third sealing resin side surface 53. The second end 21b is the end of the drive pad 21 that faces the fourth sealing resin side surface 54. The first end 21a is positioned so as to overlap the bent portion 18c of the lead portion 16 when viewed in the vertical direction X. The second end 21b is located closer to the fourth sealing resin side surface 54 than the third side surface 12e of the inner main body portion 12. In this embodiment, the size of the drive pad 21 in the horizontal direction Y is smaller than the size of the semiconductor element 40 in the horizontal direction Y. As shown in FIG. 5 , the drive pad 21 is located closer to the sealing resin top surface 56 than the main surface 12a of the inner main body portion 12 in the thickness direction Z. In addition, the drive pad 21 is located closer to the sealing resin top surface 56 than the surface 40a of the semiconductor element 40 in the thickness direction Z. As shown in Figures 4 and 5, in this embodiment, the drive pad 21 is located at the same position as the middle portion 18b of the lead portion 16 in the thickness direction Z.

[0027] As shown in FIG. 2, the connecting portion 23 continues from the end of the drive pad 21 on the side of the second sealing resin side surface 52. The connecting portion 23 is located closer to the fourth sealing resin side surface 54 than the center of the drive pad 21 in the horizontal direction Y. The drive terminal 22 constitutes a source terminal. As shown in FIG. 5, the drive terminal 22 protrudes from the first inclined surface 52a of the second sealing resin side surface 52.

[0028] 2, the control lead 30 has a control pad 31, a control terminal 32, and a connecting portion 33 that connects the control pad 31 and the control terminal 32. The control pad 31 and the connecting portion 33 form an inner lead 30B, and the control terminal 32 forms an outer lead 30A. The control pad 31 and the connecting portion 33 are arranged between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The control pad 31 and the connecting portion 33 are arranged closer to the third sealing resin side surface 53 than the center of the sealing resin 50 in the horizontal direction Y.

[0029] The shape of the control pad 31 in a plan view is a substantially rectangular shape with the longer side in the horizontal direction Y and the shorter side in the vertical direction X. The size of the control pad 31 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. Therefore, the size of the drive pad 21 in the horizontal direction Y can be increased. The control pad 31 is located closer to the sealing resin top surface 56 than the main surface 12a of the inner main body portion 12 in the thickness direction Z. The control pad 31 is also located closer to the sealing resin top surface 56 than the surface 40a of the semiconductor element 40 in the thickness direction Z. In this embodiment, the control pad 31 is located at the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0030] The connecting portion 33 continues from the end of the control pad 31 on the second sealing resin side surface 52 side. The connecting portion 33 is located closer to the third sealing resin side surface 53 of the control pad 31 in the lateral direction Y. The control terminal 32 constitutes a gate terminal. The control terminal 32 protrudes from the first inclined surface 52a of the second sealing resin side surface 52.

[0031] As shown in FIGS. 4 and 5 , the semiconductor element 40 is mounted on the main surface 12a of the inner main body 12 by solder SD. As shown in FIG. 2 , in this embodiment, the semiconductor element 40 is disposed in the center of the inner main body 12. Specifically, in a plan view, a first distance D1 between the semiconductor element 40 and the edge of the first flange 19a of the inner main body 12 on the second sealing resin side surface 52 side is equal to a second distance D2 between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12. Furthermore, a third distance D3 between the semiconductor element 40 and the edge of the second flange 19b of the inner main body 12 on the third sealing resin side surface 53 side is equal to a fourth distance D4 between the semiconductor element 40 and the edge of the third flange 19c of the inner main body 12 on the fourth sealing resin side surface 54 side is equal to a fourth distance D4. Here, the first distance D1 and the second distance D2 being equal to each other includes, for example, an error of 5% of the first distance D1. Here, if the deviation between the first distance D1 and the second distance D2 is, for example, within 5% of the first distance D1, then the first distance D1 and the second distance D2 can be said to be equal to each other. Furthermore, if the deviation between the third distance D3 and the fourth distance D4 is, for example, within 5% of the third distance D3, then the third distance D3 and the fourth distance D4 can be said to be equal to each other. Furthermore, as shown in FIG. 2, the semiconductor element 40 and the drive pad 21 are offset in the vertical direction X. Furthermore, the semiconductor element 40 and the control pad 31 are offset in the vertical direction X.

[0032] The semiconductor element 40 includes silicon carbide (SiC). In this embodiment, a SiCMOSFET (metal-oxide-semiconductor field-effect transistor) is used as the semiconductor element 40. The semiconductor element 40 (SiCMOSFET) is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundred kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In this embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz.

[0033] The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is a rectangle with the longer side direction being the horizontal direction Y and the shorter side direction being the vertical direction X. In this embodiment, the size of the semiconductor element 40 in the horizontal direction Y is 3 mm. Here, the size of the semiconductor element 40 in the horizontal direction Y includes an error of 5% of 3 mm (±0.15 mm).

[0034] As shown in FIGS. 2 and 4, the semiconductor element 40 has a front surface 40a, a back surface 40b, a first side surface 40c, a second side surface 40d, a third side surface 40e, and a fourth side surface 40f. The front surface 40a and the back surface 40b face in opposite directions in the thickness direction Z. The front surface 40a faces the sealing resin top surface 56. That is, the front surface 40a faces the same direction as the main surface 10a of the substrate 10. The back surface 40b faces the sealing resin back surface 55. The back surface 40b faces the main surface 12a of the inner main body portion 12. The first side surface 40c faces the first sealing resin side surface 51, the second side surface 40d faces the second sealing resin side surface 52, the third side surface 40e faces the third sealing resin side surface 53, and the fourth side surface 40f faces the fourth sealing resin side surface 54.

[0035] A main surface side drive electrode 41 and a control electrode 43 are formed on the front surface 40a. A back surface side drive electrode 42 (see FIG. 4) is formed on the back surface 40b. In this embodiment, the main surface side drive electrode 41 forms the source electrode, and the back surface side drive electrode 42 forms the drain electrode. The control electrode 43 forms the gate electrode. The back surface side drive electrode 42 is electrically connected to the inner main body portion 12 by solder SD.

[0036] The principal surface side drive electrode 41 is formed over most of the surface 40a. In a plan view, the shape of the principal surface side drive electrode 41 is a substantially rectangular shape with its short side aligned in the vertical direction X and its long side aligned in the horizontal direction Y. The principal surface side drive electrode 41 has a recess 41a formed therein that opens toward the third sealing resin side surface 53. The recess 41a is formed at the end of the principal surface side drive electrode 41 on the third sealing resin side surface 53 side and in the center in the vertical direction X. The control electrode 43 is formed within the recess 41a.

[0037] The semiconductor element 40 has a passivation film 44, which is an insulating film formed on the main surface side drive electrode 41 and the control electrode 43. The passivation film 44 has openings 45 that expose a part of the main surface side drive electrode 41 and a part of the control electrode 43.

[0038] The shape of the opening 45 in a plan view is rectangular, with the longer side oriented in the horizontal direction Y and the shorter side oriented in the vertical direction X. The size of the opening 45 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. In other words, the size of the drive pad 21 in the horizontal direction Y is larger than the size of the opening 45 in the horizontal direction Y.

[0039] The opening 45 is provided in the center of the front surface 40a of the semiconductor element 40 in the vertical direction X. Specifically, a first distance DC1 between the opening 45 and the first side surface 40c of the semiconductor element 40, a second distance DC2 between the opening 45 and the second side surface 40d of the semiconductor element 40, a third distance DC3 between the opening 45 and the third side surface 40e of the semiconductor element 40, and a fourth distance DC4 between the opening 45 and the fourth side surface 40f of the semiconductor element 40 are all equal to one another. Here, if the maximum deviations among the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are within 5% of the first distance DC1, for example, then it can be said that the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are all equal to one another.

[0040] The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45. The exposed region 46 has a first exposed end 46a and a second exposed end 46b, which are opposite ends in the lateral direction Y. The first exposed end 46a is the end of the exposed region 46 on the third side surface 40e side of the semiconductor element 40. The second exposed end 46b is the end of the exposed region 46 on the fourth side surface 40f side of the semiconductor element 40.

[0041] The semiconductor device 1 includes a plurality of drive wires 60 and one control wire 70. In this embodiment, the plurality of drive wires 60 are composed of two drive wires, a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the plurality of drive wires 60. The first drive wire 61 is arranged on the control wire 70 side relative to the second drive wire 62.

[0042] The first drive wire 61 and the second drive wire 62 are made of the same metal. In this embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 is, for example, within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In this embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is, for example, within 5% of the wire diameter of the control wire 70, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. An example of the wire diameter of each of the first drive wire 61, the second drive wire 62, and the control wire 70 is 125 μm to 250 μm. In this embodiment, the wire diameter of each of the first drive wire 61, the second drive wire 62, and the control wire 70 is 125 μm.

[0043] The first drive wire 61 and the second drive wire 62 are spaced apart from each other and connect the main surface drive electrode 41 of the semiconductor element 40 to the drive pad 21. The first drive wire 61 and the second drive wire 62 are connected to the main surface drive electrode 41 and the drive pad 21 by, for example, wire bonding. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged at a distance in the horizontal direction Y. The first drive wire 61 and the second drive wire 62 are drive wires at both ends in the horizontal direction Y of the multiple drive wires 60.

[0044] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 increases as the wire moves from the main surface side drive electrode 41 toward the drive pad 21 side. The configuration of the first drive wire 61 and the second drive wire 62 will be described in detail below.

[0045] As shown in Fig. 6, the first drive wire 61 has a drive electrode-side end 61a and a drive pad-side end 61b. The second drive wire 62 has a drive electrode-side end 62a and a drive pad-side end 62b. In a plan view, a distance DW2 between the drive pad-side end 61b and the drive pad-side end 62b is greater than a distance DW1 between the drive electrode-side end 61a and the drive electrode-side end 62a. As shown in Fig. 6, in a plan view, the distance DW1 is the minimum value of the distance between the first drive wire 61 and the second drive wire 62, and the distance DW2 is the maximum value of the distance between the first drive wire 61 and the second drive wire 62.

[0046] The distance DY1 is the distance in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode side end 61a in the vertical direction X and an auxiliary line LS2 extending from the drive pad side end 61b in the vertical direction X, and the distance DY2 is the distance in the horizontal direction Y between an auxiliary line LS3 extending from the drive electrode side end 62a in the vertical direction X and an auxiliary line LS4 extending from the drive pad side end 62b in the vertical direction X. In this case, the distance DY2 is greater than the distance DY1.

[0047] The drive electrode side end 61a of the first drive wire 61 is connected to the first exposed end 46a side of the center of the exposed region 46 of the main surface side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode side end 61a is connected to the first exposed end 46a. Specifically, the drive electrode side end 61a is connected to a portion of the main surface side drive electrode 41 adjacent to the control electrode 43 in the horizontal direction Y, i.e., a portion that forms the bottom of the recess 41a of the main surface side drive electrode 41.

[0048] The drive pad side end 61b of the first drive wire 61 is connected to the first end 21a side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 61b is connected to the first end 21a of the drive pad 21. In one example, the drive pad side end 61b is arranged so that it is at the limit position on the third sealing resin side surface 53 side of the area where wire bonding can be performed as the first end 21a of the drive pad 21. Specifically, the position of the drive pad side end 61b in the horizontal direction Y relative to the first end 21a is set so that a capillary that supplies the first drive wire 61 in a wire bonding apparatus is located at the edge of the first end 21a of the drive pad 21 on the third sealing resin side surface 53 side. The drive pad side end 61b is arranged in a portion closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The drive pad side end 61b is arranged so that it is closer to the fourth sealing resin side surface 54 than the drive electrode side end 61a.

[0049] The drive electrode-side end 62a of the second drive wire 62 is connected to the second exposed end 46b side of the central portion of the exposed region 46 of the main surface-side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode-side end 62a is connected to the second exposed end 46b. In one example, the drive electrode-side end 62a is disposed in the horizontal direction Y at the limit of the region where wire bonding is possible, as the end of the opening 45 on the fourth side face 40f side of the semiconductor element 40. Specifically, the position of the drive electrode-side end 62a in the horizontal direction Y relative to the second exposed end 46b of the exposed region 46 is set so that a capillary for supplying the second drive wire 62 in a wire bonding apparatus is positioned at the edge of the exposed region 46 on the fourth side face 40f side. In the vertical direction X, the drive electrode-side end 62a is aligned with the drive electrode-side end 61a of the first drive wire 61 in the horizontal direction Y. Here, the state in which the drive electrode side end 62a and the drive electrode side end 61a are aligned includes both drive electrode side end portions 61a, 62a overlapping with each other in the vertical direction X, and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment between the drive electrode side end portions 61a, 62a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that both drive electrode side end portions 61a, 62a are aligned in the vertical direction X.

[0050] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 62b is connected to the second end 21b of the drive pad 21. In one example, the drive pad side end 62b is arranged so that it is at the limit position of the second end 21b of the drive pad 21, closer to the fourth sealing resin side surface 54, within the region where wire bonding is possible. Specifically, the position of the drive pad side end 62b relative to the second end 21b in the horizontal direction Y is set so that a capillary for supplying the second drive wire 62 in a wire bonding apparatus is located at the edge of the second end 21b of the drive pad 21 that is closer to the fourth sealing resin side surface 54. The drive pad side end 62b is arranged in a portion closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The drive pad side end 62b is arranged so that it is closer to the fourth sealing resin side surface 54 than the drive electrode side end 62a. The drive pad side end 62b is disposed closer to the fourth sealing resin side surface 54 than the semiconductor element 40 in the horizontal direction Y. In this embodiment, the drive pad side end 62b is arranged in the horizontal direction Y while being aligned with the drive pad side end 61b in the vertical direction X. Here, the state in which the drive pad side end 62b and the drive pad side end 61b are aligned in the vertical direction X includes both the drive pad side end 61b, 62b overlapping with each other in the vertical direction X and partial overlap due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment between the drive pad side end 61b, 62b in the vertical direction X is approximately the same as the variation in wire bonding, then it can be said that both drive pad side end 61b, 62b are aligned in the vertical direction X.

[0051] The control wire 70 connects the control electrode 43 of the semiconductor element 40 to the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31 by, for example, wire bonding. The control wire 70 is made of the same material as the multiple drive wires 60. The control wire 70 has a control electrode-side end 71 and a control pad-side end 72. The control electrode-side end 71 is the end of the control wire 70 that is connected to the control electrode 43. The control pad-side end 72 is the end of the control wire 70 that is connected to the control pad 31. A distance DW3 between the control electrode-side end 71 of the control wire 70 and the drive electrode-side end 61a of the first drive wire 61 is smaller than the distance DW1. A distance DY3 between an auxiliary line LS5 extending from the control electrode-side end 71 along the vertical direction X and an auxiliary line LS6 extending from the control pad-side end 72 along the vertical direction X is larger than the distance DY1 but smaller than the distance DY2. The magnitude of the distance DY3 can be changed arbitrarily. In one example, the distance DY3 is equal to or less than the distance DY1.

[0052] The operation of this embodiment will be described. In semiconductor devices that include semiconductor elements containing SiC, even inductance on the order of nanohenries (nH) can have a significant impact on the characteristics of the semiconductor device. For this reason, a configuration that can reduce inductance in semiconductor devices is desired.

[0053] In a semiconductor device, the inductance between the source electrode and the source terminal decreases as the width of the conductor connecting the source electrode and the source terminal increases in a planar view. When the conductor is composed of multiple drive wires, the width of the conductor in a planar view is defined as the distance between the two drive wires that make up the most distant combination of the multiple drive wires.

[0054] Incidentally, the two drive wires that constitute the most distant combination of the multiple drive wires are the two drive wires 61 and 62 that constitute the most distant combination of the multiple drive wires 60 if there are two drive wires 60 as in this embodiment.

[0055] The first drive wire 61 and the second drive wire 62 are further away from the drive pad 21 (source terminal) than from the main surface drive electrode 41 (source electrode). Specifically, the distance DW2 between the drive pad end 61b and the drive pad end 62b is greater than the distance DW1 between the drive electrode end 61a and the drive electrode end 62a. This allows the conductor to have a wider width in plan view compared to a configuration in which the first drive wire 61 and the second drive wire 62 are parallel in plan view.

[0056] In this embodiment, the drive electrode side end 61a of the first drive wire 61 is connected to a portion of the main surface side drive electrode 41 adjacent to the control electrode 43 in the horizontal direction Y, and the drive electrode side end 62a of the second drive wire 62 is connected to an end of the main surface side drive electrode 41 on the fourth side surface 40f side that is exposed by the opening 45. This allows the distance DW1, which is the minimum value of the distance between the first drive wire 61 and the second drive wire 62, to be large, and therefore the width of the conductor in a plan view can be increased.

[0057] According to the semiconductor device 1 of this embodiment, the following effects can be obtained. (1-1) In plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther away than the main surface side drive electrode 41 side. With this configuration, the distance between the first drive wire 61 and the second drive wire 62 can be increased, thereby reducing the inductance from the main surface side drive electrode 41 to the drive pad 21. In this embodiment, the inductance is reduced by 5 to 7 nH compared to a configuration in which the first drive wire 61 and the second drive wire 62 are parallel and spaced apart by a distance DW1 in plan view. Note that the distance DW1 is the distance between the drive electrode side end 61 a of the first drive wire 61 and the drive electrode side end 62 a of the second drive wire 62.

[0058] (1-2) The size of the drive pad 21 in the horizontal direction Y is larger than the size of the opening 45 in the horizontal direction Y. With this configuration, it is possible to increase the distance DW2 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0059] (1-3) The drive pad side end 61b of the first drive wire 61 is connected to the first end 21a of the drive pad 21, and the drive pad side end 62b of the second drive wire 62 is connected to the second end 21b of the drive pad 21. With this configuration, the distance DW2 between the drive pad side end 61b and the drive pad side end 62b can be made large. Therefore, the distance between the first drive wire 61 and the second drive wire 62 can be made large, which reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0060] (1-4) The drive electrode side end 61a of the first drive wire 61 is connected to the first exposed end 46a of the exposed region 46 of the main surface side drive electrode 41, and the drive electrode side end 62a of the second drive wire 62 is connected to the second exposed end 46b of the exposed region 46. With this configuration, the distance DW1 between the drive electrode side end 61a and the drive electrode side end 62a can be made large. Therefore, the distance between the first drive wire 61 and the second drive wire 62 can be made large, which reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0061] (1-5) The drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62 are each connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center portion in the vertical direction X. With this configuration, the first drive wire 61 and the second drive wire 62 can each be shortened, thereby further reducing the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20.

[0062] (1-6) The first drive wire 61 and the second drive wire 62 are made of the same material. The wire diameter of the first drive wire 61 is the same as that of the second drive wire 62. With this configuration, the drive wires 61, 62 can be connected to the main surface side drive electrodes 41 and the drive pads 21 using the same wire, simplifying the connection process.

[0063] (1-7) The same material is used for the multiple drive wires 60 and the control wires 70. The wire diameter of the multiple drive wires 60 is the same as that of the control wire 70. With this configuration, the same wire can be used to connect the multiple drive wires 60 to the main surface side drive electrodes 41 and drive pads 21, and the control wire 70 to the control electrode 43 and control pad 31, thereby simplifying the work process.

[0064] (Modification of the first embodiment) The semiconductor device 1 of the first embodiment can be modified, for example, as follows. The following modifications can be combined with each other as long as no technical contradiction occurs. In the following modifications, parts that are common to the first embodiment are assigned the same reference numerals as in the first embodiment, and their description will be omitted.

[0065] The number of drive wires 60 is not limited to two and can be changed as desired. In one example, as shown in FIG. 7 , the plurality of drive wires 60 may be composed of three drive wires: a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the combination of the plurality of drive wires 60 that is furthest apart.

[0066] That is, when the number of drive wires is three or more, the most distant combination is the two drive wires that are located at the furthest positions. For example, when three or more drive wires are arranged in the horizontal direction Y, the most distant combination is the combination of drive wires at both ends in the horizontal direction Y.

[0067] The third drive wire 63 has a drive electrode-side end 63a and a drive pad-side end 63b. The drive electrode-side end 63a is the end of the third drive wire 63 that is connected to the main surface-side drive electrode 41. The drive pad-side end 63b is the end of the third drive wire 63 that is connected to the drive pad 21. The distance DW4 between the drive electrode-side end 63a and the drive electrode-side end 61a of the first drive wire 61 is equal to the distance DW5 between the drive electrode-side end 63a and the drive electrode-side end 62a of the second drive wire 62. Here, if the deviation between the distances DW4 and DW5 is within 5% of the distance DW4, for example, then the distances DW4 and DW5 can be said to be equal to each other. In FIG. 7, the distances DW4 and DW5 are greater than the distance DW3 between the drive electrode-side end 61a of the first drive wire 61 and the control electrode-side end 71 of the control wire 70.

[0068] 7, the drive electrode side end 61a of the first drive wire 61, the drive electrode side end 62a of the second drive wire 62, and the drive electrode side end 63a of the third drive wire 63 are aligned in the vertical direction X and arranged in the horizontal direction Y. Here, the state in which the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X includes the drive electrode side end portions 61a, 62a, and 63a overlapping with each other in the vertical direction X, and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side end portions 61a, 62a, and 63a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X.

[0069] The drive pad side end 63b of the third drive wire 63 is disposed closer to the semiconductor element 40 in the vertical direction X than the center of the drive pad 21 in the vertical direction X. The distance DW6 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 63b is greater than the distance DW4. The distance DW7 between the drive pad side end 62b of the second drive wire 62 and the drive pad side end 63b is greater than the distance DW5. In FIG. 7, the distance DW6 is equal to the distance DW7. Here, if the deviation between the distances DW6 and DW7 is within 5% of the distance DW6, for example, then the distances DW6 and DW7 can be said to be equal to each other.

[0070] The first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. The third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the third drive wire 63 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. The position of the drive pad side end 63b relative to the drive pad 21 can be changed as desired. In one example, the drive pad side end 63b may be connected to the drive pad 21 so that the distance DW6 is smaller than the distance DW7.

[0071] The size of the semiconductor element 40 can be changed as desired. For example, as shown in FIG. 8, the size of the semiconductor element 40 may be larger than that of the semiconductor element 40 of the first embodiment. In FIG. 8, the size of the semiconductor element 40 in the vertical direction X and the horizontal direction Y are both larger than those of the semiconductor element 40 of the first embodiment. In addition, as the size of the semiconductor element 40 increases, the sizes of the main surface side drive electrodes 41 and the openings 45 formed on the surface 40a can also be increased in the vertical direction X and the horizontal direction Y, respectively. In FIG. 8, the size of the openings 45 in the horizontal direction Y is larger than the size of the drive pads 21 in the horizontal direction Y.

[0072] The semiconductor element 40 is disposed in the center of the inner main body 12. Specifically, in a plan view, a first distance D1 between the semiconductor element 40 and an edge of the first flange portion 19a of the inner main body 12 that faces the second sealing resin side surface 52, a second distance D2 between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12, a third distance D3 between the semiconductor element 40 and an edge of the second flange portion 19b of the inner main body 12 that faces the third sealing resin side surface 53, and a fourth distance D4 between the semiconductor element 40 and an edge of the third flange portion 19c of the inner main body 12 that faces the fourth sealing resin side surface 54 are all equal to one another. Here, if the maximum deviation amounts of the first distance D1, the second distance D2, the third distance D3, and the fourth distance D4 are within 5% of the first distance D1, for example, then it can be said that the first distance D1, the second distance D2, the third distance D3, and the fourth distance D4 are all equal to one another.

[0073] Similar to the first embodiment, the semiconductor device 1 includes a first drive wire 61 and a second drive wire 62 as the plurality of drive wires 60. The drive electrode side end 61a of the first drive wire 61 is connected to the first exposed end 46a of the exposed region 46 of the main surface side drive electrode 41, similar to the drive electrode side end 61a of the first embodiment. The drive pad side end 61b of the first drive wire 61 is connected to the first end 21a of the drive pad 21, similar to the drive pad side end 61b of the first embodiment. The drive electrode side end 62a of the second drive wire 62 is connected to the second exposed end 46b of the exposed region 46 of the main surface side drive electrode 41, similar to the drive electrode side end 62a of the first embodiment. The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b of the drive pad 21, similar to the drive pad side end 62b of the first embodiment. As in the first embodiment, the drive electrode side end 61a and the drive electrode side end 62a are aligned with each other in the vertical direction X and arranged in the horizontal direction Y. The drive pad side end 61b and the drive pad side end 62b are each connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X.

[0074] In a plan view, the distance DW2 between the drive pad end 61b and the drive pad end 62b is smaller than the distance DW1 between the drive electrode end 61a and the drive electrode end 62a. In FIG. 8 , the distance DY1 in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode end 61a in the vertical direction X and an auxiliary line LS2 extending from the drive pad end 61b in the vertical direction X is larger than the distance DY2 in the horizontal direction Y between an auxiliary line LS3 extending from the drive electrode end 62a in the vertical direction X and an auxiliary line LS4 extending from the drive pad end 62b in the vertical direction X. In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is closer than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 gradually narrows from the main surface side drive electrode 41 toward the drive pad 21.

[0075] According to this configuration, the distance between the first drive wire 61 and the second drive wire 62 can be increased, thereby reducing the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20.

[0076] The relationship between the distance DW1 and the distance DW2 can be changed as desired. In one example, the distance DW1 may be equal to the distance DW2. In this case, the first drive wire 61 is parallel to the second drive wire 62 in a plan view.

[0077] In the modified example of FIG. 8 , the number of drive wires 60 is not limited to two and can be changed arbitrarily. In one example, as shown in FIG. 9 , the multiple drive wires 60 may be composed of three drive wires: a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the multiple drive wires 60. The third drive wire 63 has a drive electrode-side end 63a and a drive pad-side end 63b. The distance DW4 between the drive electrode-side end 63a and the drive electrode-side end 61a of the first drive wire 61 is equal to the distance DW5 between the drive electrode-side end 63a and the drive electrode-side end 62a of the second drive wire 62. Here, if the deviation between the distances DW4 and DW5 is within 5% of the distance DW4, for example, the distances DW4 and DW5 can be said to be equal to each other.

[0078] 9, similarly to the semiconductor device 1 of FIG. 7, the drive electrode side end 61a of the first drive wire 61, the drive electrode side end 62a of the second drive wire 62, and the drive electrode side end 63a of the third drive wire 63 are aligned in the vertical direction X.

[0079] The drive pad-side end 63b of the third drive wire 63 is disposed in the vertical direction X closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The distance DW6 between the drive pad-side end 61b of the first drive wire 61 and the drive pad-side end 63b is smaller than the distance DW4. The distance DW7 between the drive pad-side end 62b of the second drive wire 62 and the drive pad-side end 63b is equal to the distance DW5. Here, if the deviation between the distance DW7 and the distance DW5 is within 5% of the distance DW7, for example, then the distance DW7 can be said to be equal to the distance DW5.

[0080] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so that they are closer to the drive pad 21 than to the main surface side drive electrode 41. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually narrows from the main surface side drive electrode 41 toward the drive pad 21. The third drive wire 63 is parallel to the second drive wire 62.

[0081] The position of the semiconductor element 40 relative to the inner main body portion 12 can be changed as desired. In a first example, as shown in Fig. 10, the semiconductor element 40 may be disposed in a portion of the inner main body portion 12 closer to the second sealing resin side surface 52. In detail, a first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body portion 12 on the second sealing resin side surface 52 side is smaller than a second distance D2 between the semiconductor element 40 and the narrow portion 14 of the inner main body portion 12.

[0082] In the horizontal direction Y, the semiconductor element 40 is disposed in the center of the inner main body 12. Specifically, a third distance D3 between the semiconductor element 40 and the edge of the second flange 19b of the inner main body 12 that faces the third sealing resin side surface 53 is equal to a fourth distance D4 between the semiconductor element 40 and the edge of the third flange 19c of the inner main body 12 that faces the fourth sealing resin side surface 54. Here, if the deviation between the third distance D3 and the fourth distance D4 is within 5% of the third distance D3, for example, it can be said that the third distance D3 and the fourth distance D4 are equal to each other.

[0083] With this configuration, the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is reduced, thereby shortening the first drive wire 61 and the second drive wire 62. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0084] 11 , the semiconductor element 40 may be disposed in a portion of the inner main body 12 closer to the second sealing resin side surface 52 and closer to the fourth sealing resin side surface 54. Specifically, a first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body 12 facing the second sealing resin side surface 52 is smaller than a second distance D2 between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12. Furthermore, a third distance D3 between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body 12 facing the third sealing resin side surface 53 is larger than a fourth distance D4 between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body 12 facing the fourth sealing resin side surface 54.

[0085] With this configuration, the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is further reduced, thereby further shortening the first drive wire 61 and the second drive wire 62. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0086] The lead portions 16 may be omitted from the substrate 10 of the semiconductor device 1 of the first embodiment. In this case, the drive pad 21 and the control pad 31 are adjacent to each other in the horizontal direction Y. The size of the drive pad 21 in the horizontal direction Y may be increased by the amount of the omitted lead portions 16. With this configuration, the distance DW2 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62 can be increased, thereby reducing the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0087] (Second embodiment) 12 to 21, a second embodiment of the semiconductor device 1 will be described. The semiconductor device 1 of this embodiment differs from the semiconductor device 1 of the first embodiment in that the shapes of the substrate 10, the drive leads 20, the control leads 30, and the sealing resin 50 are different, and in that a sense lead 80 is added. In this embodiment, for convenience, the same components as those in the first embodiment are denoted by the same reference numerals, and their description may be omitted.

[0088] 12, the semiconductor device 1 of this embodiment is a package that conforms to the package outline standard (JEITA standard) TO-263. Specifically, the vertical dimension L1 of the semiconductor device 1 is 14.7 mm to 15.5 mm, the horizontal dimension L2 is 10.06 mm to 10.26 mm, and the thickness dimension L3 is 4.40 mm to 4.70 mm. The semiconductor device 1 is also of a SIP type. Thus, the size of the semiconductor device 1 of this embodiment is larger than the size of the semiconductor device 1 of the first embodiment.

[0089] As shown in FIG. 12 , the sealing resin 50 has a rectangular parallelepiped shape. The sealing resin 50 is formed by molding. Each of the side surfaces 51 to 54 of the sealing resin 50 has an inclined surface inclined with respect to the thickness direction Z to provide a draft angle that makes it easier to remove a mold when molding the sealing resin 50. Specifically, each of the side surfaces 51 to 54 has a first inclined surface provided with a draft angle that makes it easier to remove an upper part of the mold, and a second inclined surface provided with a draft angle that makes it easier to remove a lower part of the mold. The upper part of the mold forms the sealing resin top surface 56 and the portions of each of the side surfaces 51 to 54 that face the sealing resin top surface 56. The lower part forms the sealing resin back surface 55 and the portions of each of the side surfaces 51 to 54 that face the sealing resin back surface 55. An inclined surface 57 with an inclination angle larger than the draft angle is formed between the first sealing resin side surface 51 and the sealing resin top surface 56.

[0090] Recesses 58 are formed at both ends of the sealing resin 50 in the horizontal direction Y. The recesses 58 on the third sealing resin side surface 53 side of the sealing resin 50 are recessed in a curved shape from the third sealing resin side surface 53 in the horizontal direction Y. The recesses 58 on the fourth sealing resin side surface 54 side of the sealing resin 50 are recessed in a curved shape from the fourth sealing resin side surface 54 in the horizontal direction Y. The recesses 58 are formed from the sealing resin top surface 56 to the main surface 10a of the substrate 10. In other words, the recesses 58 expose a portion of the main surface 10a of the substrate 10. The recesses 58 are provided closer to the second sealing resin side surface 52 than the center of the sealing resin 50 in the vertical direction X.

[0091] Fig. 13 is a view of the semiconductor device 1 as viewed from the sealing resin top surface 56 in the thickness direction Z. In Fig. 13, for convenience, the sealing resin 50 is shown by a two-dot chain line, and the components inside the sealing resin 50 are shown by a solid line. As shown in Fig. 13, in a plan view, the shape of the sealing resin 50 is a rectangle whose long side direction is the horizontal direction Y and whose short side direction is the vertical direction X.

[0092] 12 and 13, the substrate 10 can be divided into an inner main body portion 12 disposed within the sealing resin 50 and a protruding portion 13 protruding from the sealing resin 50. The inner main body portion 12 and the protruding portion 13 are adjacent to each other in the vertical direction X. The substrate 10 is formed of, for example, aluminum (Al) or copper (Cu).

[0093] A first wide portion 12f is formed at the end of the inner main body portion 12 on the protrusion 13 side. The size of the first wide portion 12f in the horizontal direction Y is larger than the size of the portion of the inner main body portion 12 other than the first wide portion 12f in the horizontal direction Y. The first wide portion 12f is provided adjacent to the first sealing resin side surface 51 of the sealing resin 50 in the vertical direction X.

[0094] A second wide portion 12g is formed at the end of the inner main body portion 12 on the side of the second sealing resin side surface 52. The size in the horizontal direction Y of the second wide portion 12g is larger than the size in the horizontal direction Y of the portion of the inner main body portion 12 other than the first wide portion 12f. Furthermore, the size in the horizontal direction Y of the second wide portion 12g is smaller than the size in the horizontal direction Y of the first wide portion 12f.

[0095] The protrusion 13 protrudes in the vertical direction X from the first sealing resin side surface 51. In this embodiment, the size of the protrusion 13 in the horizontal direction Y is equal to the size of the first wide portion 12f of the inner main body portion 12 in the horizontal direction Y. The size of the protrusion 13 in the horizontal direction Y can be changed as desired. In one example, the size of the protrusion 13 in the horizontal direction Y may be smaller than the size of the first wide portion 12f of the inner main body portion 12 in the horizontal direction Y.

[0096] The inner main body portion 12 is provided with a plurality of flange portions 19 that protrude from the side surface of the main body portion 12. In this embodiment, the inner main body portion 12 and the plurality of flange portions 19 are an integrated single part.

[0097] The multiple flange portions 19 include a first flange portion 19a, a second flange portion 19b, and a third flange portion 19c. The first flange portion 19a protrudes from the first side surface 12c of the inner main body portion 12 toward the second sealing resin side surface 52. The first flange portion 19a constitutes a part of the second wide portion 12g. The second flange portion 19b protrudes from the second side surface 12d of the inner main body portion 12 toward the third sealing resin side surface 53. A part of the second flange portion 19b constitutes a part of the second wide portion 12g. The third flange portion 19c protrudes from the third side surface 12e of the inner main body portion 12 toward the fourth sealing resin side surface 54. The third flange portion 19c constitutes a part of the second wide portion 12g.

[0098] The first flange portion 19a, the second flange portion 19b, and the third flange portion 19c are each provided so as to be flush with the main surface 12a of the inner main body portion 12. Therefore, the main surface 10a of the substrate 10 is formed by the main surface 12a of the inner main body portion 12 and the first flange portion 19a, the second flange portion 19b, and the third flange portion 19c. Furthermore, the first flange portion 19a, the second flange portion 19b, and the third flange portion 19c are each provided so as to be closer to the main surface 12a than the back surface 12b (see FIG. 13) of the inner main body portion 12. Therefore, the back surface 10b (see FIG. 13) of the substrate 10 is formed by the back surface 12b of the inner main body portion 12. With this configuration of the flange portions 19a to 19c, separation between the substrate 10 and the sealing resin 50 can be suppressed.

[0099] 14, the back surface 10b of the substrate 10 (back surface 12b of the inner main body portion 12) is exposed from the sealing resin back surface 55. Specifically, the back surface 12b of the inner main body portion 12 other than a part of the first wide portion 12f and the second wide portion 12g is exposed from the sealing resin back surface 55. This improves the heat dissipation performance of the substrate 10. In addition, the back surface 10b of the substrate 10 and the sealing resin back surface 55 of the sealing resin 50 are flush with each other.

[0100] 13, in a plan view, the drive lead 20, the control lead 30, and the sense lead 80 are arranged closer to the second sealing resin side surface 52 of the sealing resin 50 than the substrate 10. In this embodiment, in a plan view, the edges of the drive lead 20, the control lead 30, and the sense lead 80 on the first sealing resin side surface 51 side overlap with the edge of the inner main body portion 12 on the second sealing resin side surface 52 side. The drive lead 20, the control lead 30, and the sense lead 80 are arranged spaced apart from each other in the horizontal direction Y. The sense lead 80 is arranged between the drive lead 20 and the control lead 30 in the horizontal direction Y.

[0101] The drive lead 20 has a drive pad 21 , a plurality of drive terminals 22 , and a plurality of connecting portions 23 that connect the drive pad 21 and the plurality of drive terminals 22 . The shape of the drive pad 21 in plan view is a substantially rectangular shape with its longer side aligned in the horizontal direction Y and its shorter side aligned in the vertical direction X. The first end 21a of the drive pad 21 is located closer to the third sealing resin side surface 53 than the center of the inner main body portion 12 in the horizontal direction Y. When viewed in the vertical direction X, the second end 21b of the drive pad 21 is arranged to overlap with the end of the inner main body portion 12 closer to the fourth sealing resin side surface 54. Thus, the size of the drive pad 21 in the horizontal direction Y is more than half the size of the inner main body portion 12 in the horizontal direction Y. As shown in FIG. 12 , the drive pad 21 is located closer to the sealing resin top surface 56 than the main surface 10a of the substrate 10 in the thickness direction Z. The drive pad 21 is also located closer to the sealing resin top surface 56 than the semiconductor element 40 in the thickness direction Z.

[0102] 13, in this embodiment, the plurality of drive terminals 22 include five drive terminals: 22a, 22b, 22c, 22d, and 22e. The plurality of connecting portions 23 include five connecting portions: 23a, 23b, 23c, 23d, and 23e. The drive terminals 22a to 22e are arranged spaced apart from one another in the horizontal direction Y. The drive terminals 22a to 22e are arranged in the following order from the first end 21a to the second end 21b of the drive pad 21. The connecting portions 23a to 23e are arranged spaced apart from one another in the horizontal direction Y. Connecting portion 23a connects drive pad 21 and drive terminal 22a, connecting portion 23b connects drive pad 21 and drive terminal 22b, connecting portion 23c connects drive pad 21 and drive terminal 22c, connecting portion 23d connects drive pad 21 and drive terminal 22d, and connecting portion 23e connects drive pad 21 and drive terminal 22e.

[0103] 13, the drive terminals 22a to 22e, the control terminal 32, and a sense terminal 82, which will be described later, are arranged at equal intervals. The drive terminal 22a is arranged to include a portion of the drive pad 21 that is closer to the third sealing resin side surface 53 than the first end 21a. The drive terminal 22a is arranged closer to the third sealing resin side surface 53 than the center of the inner main body portion 12 in the lateral direction Y.

[0104] The driving terminal 22b is arranged so as to be at the same position as the center of the inner main body portion 12 in the horizontal direction Y. Specifically, an imaginary line LV1 extending along the vertical direction X at the center of the driving terminal 22b in the horizontal direction Y coincides with an imaginary line LV2 extending along the vertical direction X at the center of the inner main body portion 12 in the horizontal direction Y. The driving terminals 22c to 22e are arranged so as to be closer to the fourth sealing resin side surface 54 than the center of the inner main body portion 12 in the horizontal direction Y. In this embodiment, the driving terminals 22d and 22e are arranged so as to be closer to the fourth sealing resin side surface 54 than the semiconductor element 40. The driving terminals 22a, 22c to 22e have the same shape. The driving terminal 22b is shorter than the driving terminals 22a, 22c to 22e.

[0105] The control lead 30 is arranged so as to overlap the end of the inner main body portion 12 on the third sealing resin side surface 53 side when viewed from the vertical direction X. The control lead 30 is arranged so as to be closer to the third sealing resin side surface 53 than the semiconductor element 40.

[0106] As shown in FIG. 12, the control pad 31 is located closer to the sealing resin top surface 56 than the main surface 10a of the substrate 10 in the thickness direction Z. The control pad 31 is also located closer to the sealing resin top surface 56 than the semiconductor element 40 in the thickness direction Z. As shown in FIG. 13, the control pad 31 has a generally rectangular shape in plan view, with the longer side extending in the vertical direction X and the shorter side extending in the horizontal direction Y. The size of the control pad 31 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. This allows the size of the drive pad 21 in the horizontal direction Y to be increased. The control terminal 32 of the control lead 30 constitutes a gate terminal. The control terminal 32 has the same shape as the drive terminals 22a, 22c to 22e.

[0107] In this embodiment, the sense lead 80 is a lead for electrically connecting the control electrode 43 (gate electrode) and the main surface side drive electrode 41 (source electrode). In a plan view, the sense lead 80 is arranged closer to the third sealing resin side surface 53 than the semiconductor element 40. The sense lead 80 has a sense pad 81, a sense terminal 82, and a connecting portion 83 that connects the sense pad 81 and the sense terminal 82.

[0108] The sense pad 81 is disposed spaced apart from the semiconductor element 40 in the vertical direction X. The sense pad 81 is disposed between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The sense pad 81 is disposed between the drive pad 21 and the control pad 31 in the horizontal direction Y. The sense pad 81 has a generally rectangular shape in plan view, with its longer side extending in the vertical direction X and its shorter side extending in the horizontal direction Y. The size of the sense pad 81 in the horizontal direction Y is equal to the size of the control pad 31 in the horizontal direction Y. That is, the size of the sense pad 81 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. This allows the size of the drive pad 21 in the horizontal direction Y to be increased. As shown in FIG. 12 , the sense pad 81 is located closer to the sealing resin top surface 56 than the main surface 10a of the substrate 10 in the thickness direction Z. The sense pad 81 is also located closer to the sealing resin top surface 56 than the semiconductor element 40 in the thickness direction Z. The size of the sense pad 81 in the horizontal direction Y and the size of the control pad 31 in the horizontal direction Y can be changed arbitrarily. In one example, the size of the sense pad 81 in the horizontal direction Y may be smaller than the size of the control pad 31 in the horizontal direction Y.

[0109] 13, the connecting portion 83 is continuous with the end of the sense pad 81 on the second sealing resin side surface 52 side in the vertical direction X. The connecting portion 83 is located at the end of the sense pad 81 on the third sealing resin side surface 53 side in the horizontal direction Y. The sense terminal 82 protrudes from the second sealing resin side surface 52. The sense terminal 82 has the same shape as the drive terminals 22a, 22c to 22e and the control terminal 32.

[0110] As in the first embodiment, a SiC MOSFET is used for the semiconductor element 40. As in the first embodiment, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundred kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In this embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz. The shape and size of the semiconductor element 40 are similar to those of the semiconductor element 40 of the first embodiment.

[0111] The semiconductor element 40 is disposed closer to the second sealing resin side surface 52 than the inner main body portion 12 in the vertical direction X. Specifically, in a plan view, a first distance D1 in the vertical direction X between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body portion 12 on the second sealing resin side surface 52 side is smaller than a second distance D2 in the vertical direction X between the semiconductor element 40 and the first wide portion 12f of the inner main body portion 12.

[0112] The semiconductor element 40 is disposed in the center of the inner main body portion 12 in the lateral direction Y. Specifically, a third distance D3 between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body portion 12 on the third sealing resin side surface 53 side is equal to a fourth distance D4 between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body portion 12 on the fourth sealing resin side surface 54 side in the lateral direction Y. Here, if the deviation between the third distance D3 and the fourth distance D4 is, for example, within 5% of the third distance D3, it can be said that the third distance D3 and the fourth distance D4 are equal to each other.

[0113] The semiconductor device 1 includes a plurality of drive wires 60, a control wire 70, and a sense wire 90. In this embodiment, the plurality of drive wires 60 are composed of two drive wires, a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the plurality of drive wires 60. The first drive wire 61 and the second drive wire 62 are arranged at a distance in the horizontal direction Y. The first drive wire 61 and the second drive wire 62 are drive wires at both ends of the plurality of drive wires 60 in the horizontal direction Y. The control wire 70, the first drive wire 61, and the second drive wire 62 are arranged at a distance in the horizontal direction Y. The first drive wire 61 is arranged on the control wire 70 side relative to the second drive wire 62.

[0114] The first drive wire 61 and the second drive wire 62 are made of the same metal. In this embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 is, for example, within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In this embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is, for example, within 5% of the wire diameter of the control wire 70, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. The first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21, respectively, by wire bonding, for example.

[0115] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 increases as the wire moves from the main surface side drive electrode 41 toward the drive pad 21 side. The configuration of the first drive wire 61 and the second drive wire 62 will be described in detail below.

[0116] 15, in a plan view, a distance DW2 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62 is greater than a distance DW1 between the drive electrode side end 61a of the first drive wire 61 and the drive electrode side end 62a of the second drive wire 62. In this embodiment, the drive pad side end 61b is disposed closer to the third sealing resin side surface 53 than the drive electrode side end 61a in the horizontal direction Y. The drive pad side end 62b is disposed closer to the fourth sealing resin side surface 54 than the drive electrode side end 62a in the horizontal direction Y. Thus, in a plan view, the inclination direction of the first drive wire 61 with respect to the vertical direction X is opposite to the inclination direction of the second drive wire 62 with respect to the vertical direction X.

[0117] The distance DY1 is the distance in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode side end 61a in the vertical direction X and an auxiliary line LS2 extending from the drive pad side end 61b in the vertical direction X, and the distance DY2 is the distance in the horizontal direction Y between an auxiliary line LS3 extending from the drive electrode side end 62a in the vertical direction X and an auxiliary line LS4 extending from the drive pad side end 62b in the vertical direction X. In this case, the distance DY2 is greater than the distance DY1.

[0118] The drive electrode side end 61a of the first drive wire 61 is connected closer to the first exposed end 46a than to the center of the exposed region 46 of the main surface side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode side end 61a is connected closer to the center of the exposed region 46 of the main surface side drive electrode 41 than to the first exposed end 46a in the horizontal direction Y. In other words, the drive electrode side end 61a is connected to a portion of the exposed region 46 that is spaced apart from the control electrode 43, i.e., a portion that is spaced apart from the bottom of the recess 41a of the main surface side drive electrode 41. The drive electrode side end 61a also overlaps the connecting portion 23b of the drive lead 20 when viewed in the vertical direction X.

[0119] The drive pad side end 61b of the first drive wire 61 is connected to the first end 21a side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 61b is connected to the first end 21a of the drive pad 21. The drive pad side end 61b is connected to a portion of the drive pad 21 that is closer to the third sealing resin side surface 53 than the connecting portion 23b in the horizontal direction Y. In this embodiment, the drive pad side end 61b overlaps the connecting portion 23a of the drive lead 20 when viewed in the vertical direction X. The drive pad side end 61b is connected to a portion of the drive pad 21 that is closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X.

[0120] In addition, the drive pad side end 61b may be connected to the first end 21a so that it is the limit position on the third sealing resin side surface 53 side of the area in which wire bonding can be performed as the first end 21a of the drive pad 21 in the horizontal direction Y.

[0121] The drive electrode side end 62a of the second drive wire 62 is connected to the second exposed end 46b side of the central portion of the exposed region 46 of the main surface side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode side end 62a is connected to the second exposed end 46b of the exposed region 46. In this embodiment, the drive electrode side end 62a overlaps with a portion between the connecting portion 23b and the connecting portion 23c in the horizontal direction Y when viewed from the vertical direction X. In one example, the position of the drive electrode side end 62a relative to the exposed region 46 is set so that it is the limit position on the fourth side face 40f side of the region in the horizontal direction Y where wire bonding can be performed as the second exposed end 46b of the exposed region 46. In the vertical direction X, the drive electrode side end 62a is aligned with the drive electrode side end 61a of the first drive wire 61. Note that the state in which the drive electrode side end portion 62a and the drive electrode side end portion 61a are aligned in the vertical direction X includes both drive electrode side end portions 61a, 62a overlapping with each other in the vertical direction X and partially overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment in the vertical direction X between the drive electrode side end portions 61a, 62a is approximately the same as the variation in wire bonding, it can be said that both drive electrode side end portions 61a, 62a are aligned in the vertical direction X.

[0122] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 62b is connected to the second end 21b of the drive pad 21. The drive pad side end 62b is arranged so as to be closer to the fourth sealing resin side surface 54 than the semiconductor element 40. In this embodiment, the drive pad side end 62b overlaps the connecting portion 23e when viewed in the vertical direction X. Note that the position of the drive pad side end 62b relative to the drive pad 21 may be set so as to be the limit position on the fourth sealing resin side surface 54 side of the region where wire bonding can be performed as the second end 21b of the drive pad 21. The drive pad side end 62b is connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X.

[0123] The control wire 70 connects the control electrode 43 of the semiconductor element 40 to the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31 by, for example, wire bonding. As in the first embodiment, the control wire 70 is made of the same material as the multiple drive wires 60. The wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62. Here, if the deviation between the wire diameter of the control wire 70 and the wire diameters of the first drive wire 61 and the second drive wire 62 is within, for example, 5% of the wire diameter of the control wire 70, it can be said that the wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62.

[0124] The control wire 70 has a control electrode-side end 71 and a control pad-side end 72. A distance DW3 between the control electrode-side end 71 and the drive electrode-side end 61a of the first drive wire 61 is smaller than the distance DW1. A distance DY3 between an auxiliary line LS5 extending from the control electrode-side end 71 along the vertical direction X and an auxiliary line LS6 extending from the control pad-side end 72 along the vertical direction X is larger than the distance DY1 and slightly smaller than the distance DY2. Note that the distance DY3 can be changed as desired. In one example, the distance DY3 may be equal to or greater than the distance DY2.

[0125] The sense wire 90 connects the main surface drive electrode 41 of the semiconductor element 40 to the sense pad 81. The sense wire 90 is connected to the main surface drive electrode 41 and the sense pad 81 by, for example, wire bonding. The sense wire 90 is made of the same material as the first drive wire 61, the second drive wire 62, and the control wire 70. The wire diameter of the sense wire 90 is, for example, equal to the wire diameter of the control wire 70. Here, if the deviation between the wire diameter of the sense wire 90 and the wire diameter of the control wire 70 is, for example, within 5% of the wire diameter of the sense wire 90, it can be said that the wire diameter of the sense wire 90 and the wire diameter of the control wire 70 are equal to each other.

[0126] The sense wire 90 has a drive electrode side end 91 and a sense pad side end 92. The drive electrode side end 91 is the end of the sense wire 90 that is connected to the main surface side drive electrode 41. The sense pad side end 92 is the end of the sense wire 90 that is connected to the sense pad 81. The sense pad side end 92 is arranged closer to the third sealing resin side surface 53 than the drive electrode side end 91 in the horizontal direction Y.

[0127] The driving electrode side end 91 is connected to a portion of the main surface side driving electrode 41 between the driving electrode side end 61a of the first driving wire 61 and the control electrode 43 in the horizontal direction Y. A distance DW8 between the driving electrode side end 91 and the driving electrode side end 61a of the first driving wire 61 is smaller than a distance DW9 between the driving electrode side end 91 and the control electrode side end 71 of the control wire 70.

[0128] A distance DY4 between an auxiliary line LS7 extending from the drive electrode side end 91 in the vertical direction X and an auxiliary line LS8 extending from the sense pad side end 92 in the vertical direction X is greater than the distance DY1 and less than the distance DY2. The distance DY4 is also less than the distance DY3.

[0129] According to the semiconductor device 1 of this embodiment, in addition to the same effects as those (1-1) to (1-7) of the first embodiment, the following effects can be obtained. (2-1) The semiconductor device 1 includes a sense lead 80 and a sense wire 90 for electrically connecting the main surface side drive electrode 41 (source electrode) and the control electrode 43 (gate electrode) of the semiconductor element 40. With this configuration, even if the voltage of the main surface side drive electrode 41 fluctuates, the voltage of the control electrode 43 fluctuates accordingly, thereby suppressing fluctuations in the voltage between the source and gate of the semiconductor element 40. Therefore, fluctuations in the threshold voltage of the semiconductor element 40 can be suppressed.

[0130] (2-2) The semiconductor element 40 is positioned closer to the second sealing resin side surface 52 than the inner main body portion 12 of the substrate 10. With this configuration, the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 can be shortened, and the lengths of the first drive wire 61 and the second drive wire 62 can be shortened. This reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0131] (2-3) The size of the drive pad 21 in the horizontal direction Y is larger than the size of the semiconductor element 40 in the horizontal direction Y. This configuration allows for a larger distance between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62. This further reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0132] (2-4) The size of the drive pad 21 in the horizontal direction Y is greater than half the size of the inner main body portion 12 of the substrate 10. This configuration allows for a large distance DW2 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62. This reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0133] (2-5) When viewed from the vertical direction X, the semiconductor element 40 and the drive pad 21 are arranged so that the entire opening 45 of the semiconductor element 40 overlaps with the drive pad 21. This configuration allows the length of the first drive wire 61 to be shortened and the distance between the first drive wire 61 and the second drive wire 62 to be increased. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0134] (2-6) The same material is used for the multiple drive wires 60, control wires 70, and sense wires 90. The wire diameters of the multiple drive wires 60, control wires 70, and sense wires 90 are also equal. With this configuration, the same wires can be used to connect the multiple drive wires 60 to the main surface side drive electrodes 41 and drive pads 21, the control wires 70 to the control electrodes 43 and control pads 31, and the sense wires 90 to the main surface side drive electrodes 41 and sense pads 81, thereby simplifying the associated work processes.

[0135] (Modification of the second embodiment) The semiconductor device 1 of the second embodiment can be modified, for example, as follows. The following modifications can be combined as long as no technical contradiction occurs. In the following modifications, parts that are common to the second embodiment are assigned the same reference numerals as in the second embodiment, and their description will be omitted.

[0136] The number of drive wires 60 is not limited to two and can be changed as desired. In one example, as shown in FIG. 16 , the multiple drive wires 60 may be composed of three drive wires: a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the multiple drive wires 60.

[0137] That is, when the number of drive wires is three or more, the most distant combination is the two drive wires that are located at the furthest positions. For example, when three or more drive wires are arranged in the horizontal direction Y, the most distant combination is the combination of drive wires at both ends in the horizontal direction Y.

[0138] The third drive wire 63 has a drive electrode side end 63a and a drive pad side end 63b. The drive electrode side end 63a is the end of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end 63b is the end of the third drive wire 63 that is connected to the drive pad 21. In FIG. 16, the drive electrode side end 63a overlaps the connecting portion 23b of the drive lead 20 when viewed from the vertical direction X. The drive pad side end 63b overlaps the connecting portion 23c of the drive lead 20 when viewed from the vertical direction X. In other words, the drive pad side end 63b is positioned closer to the fourth sealing resin side surface 54 than the drive electrode side end 63a.

[0139] 16, a distance DW4 between the drive electrode side end 63a and the drive electrode side end 61a of the first drive wire 61 is smaller than a distance DW5 between the drive electrode side end 63a and the drive electrode side end 62a of the second drive wire 62. The distances DW4 and DW5 are larger than a distance DW8 between the drive electrode side end 91 and the drive electrode side end 61a of the first drive wire 61. The position of the drive electrode side end 63a in the horizontal direction Y can be changed as desired. In one example, the drive electrode side end 63a may be connected to the main surface side drive electrode 41 so that the distances DW4 and DW5 are equal to each other.

[0140] 16, the drive electrode side end 61a of the first drive wire 61, the drive electrode side end 62a of the second drive wire 62, and the drive electrode side end 63a of the third drive wire 63 are aligned in the vertical direction X. Here, the state in which the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X includes the drive electrode side end portions 61a, 62a, and 63a overlapping with each other in the vertical direction X, and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side end portions 61a, 62a, and 63a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X.

[0141] The drive pad side end 63b of the third drive wire 63 is connected to a portion of the drive pad 21 closer to the semiconductor element 40 in the vertical direction X than the center of the drive pad 21 in the vertical direction X. A distance DW6 between the drive pad side end 61b and the drive pad side end 63b of the first drive wire 61 is greater than the distance DW4. A distance DW7 between the drive pad side end 62b and the drive pad side end 63b of the second drive wire 62 is greater than the distance DW5. In FIG. 16, the distance DW7 is greater than the distance DW6.

[0142] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the third drive wire 63 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0143] The size of the semiconductor element 40 can be changed as desired. In a first example, as shown in FIG. 17, the size of the semiconductor element 40 may be larger than the size of the semiconductor element 40 of the second embodiment. In a second example, as shown in FIG. 19, the size of the semiconductor element 40 may be larger than the size of the semiconductor element 40 of FIG. 17.

[0144] In the first example shown in FIG. 17 , the size of the semiconductor element 40 in the vertical direction X and the horizontal direction Y are both larger than those of the semiconductor element 40 of the second embodiment. Furthermore, as the size of the semiconductor element 40 increases, the size of the opening 45 formed in the surface 40a can also be increased in both the vertical direction X and the horizontal direction Y. In FIG. 17 , the size of the opening 45 in the horizontal direction Y is smaller than the size of the drive pad 21. The size of the drive pad 21 in the horizontal direction Y is larger than the size of the semiconductor element 40. The opening 45 overlaps with the first end 21a of the drive pad 21 when viewed in the vertical direction X. More specifically, the edge of the opening 45 on the third side surface 40e side is located closer to the third sealing resin side surface 53 than the drive pad 21. The opening 45 also overlaps with the connecting portion 23c of the drive lead 20 when viewed in the vertical direction X.

[0145] 17, the third side surface 40e of the semiconductor element 40 overlaps with the end of the sense lead 80 on the side of the fourth sealing resin side surface 54 when viewed from the vertical direction X. The fourth side surface 40f of the semiconductor element 40 overlaps with the portion of the drive pad 21 between the connecting portion 23c and the connecting portion 23d in the horizontal direction Y when viewed from the vertical direction X.

[0146] Similar to the second embodiment, the semiconductor device 1 includes a first drive wire 61 and a second drive wire 62 as the plurality of drive wires 60. The drive electrode-side end 61a of the first drive wire 61 is connected to a portion of the main surface-side drive electrode 41 that is separated from the control electrode 43 in the horizontal direction Y, similar to the drive electrode-side end 61a of the second embodiment. The drive pad-side end 61b of the first drive wire 61 is connected to a first end 21a of the drive pad 21, similar to the drive pad-side end 61b of the second embodiment. The drive electrode-side end 62a of the second drive wire 62 is connected to an end of the opening 45 on the fourth side surface 40f side of the semiconductor element 40 in the horizontal direction Y, similar to the drive electrode-side end 62a of the second embodiment. The drive pad-side end 62b of the second drive wire 62 is connected to a second end 21b of the drive pad 21, similar to the drive pad-side end 62b of the second embodiment. In the vertical direction X, the drive electrode side end 61a and the drive electrode side end 62a are aligned with each other and arranged in the horizontal direction Y. The drive pad side end 61b and the drive pad side end 62b are each connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X.

[0147] 17, the distance DY1 in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode end 61a in the vertical direction X and an auxiliary line LS2 extending from the drive pad end 61b in the vertical direction X is smaller than the distance DY2 in the horizontal direction Y between an auxiliary line LS3 extending from the drive electrode end 62a in the vertical direction X and an auxiliary line LS4 extending from the drive pad end 62b in the vertical direction X. In a plan view, the distance DW2 between the drive pad end 61b and the drive pad end 62b is larger than the distance DW1 between the drive electrode end 61a and the drive electrode end 62a. Thus, in a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0148] According to this configuration, the distance between the first drive wire 61 and the second drive wire 62 can be increased, thereby reducing the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20.

[0149] In the modified example of FIG. 17 , the number of drive wires 60 is not limited to two and can be arbitrarily changed. In one example, as shown in FIG. 18 , the multiple drive wires 60 may be composed of three drive wires: a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the furthest combination of the multiple drive wires 60. The third drive wire 63 has a drive electrode-side end 63 a and a drive pad-side end 63 b. The distance DW4 between the drive electrode-side end 63 a and the drive electrode-side end 61 a of the first drive wire 61 is greater than the distance DW5 between the drive electrode-side end 63 a and the drive electrode-side end 62 a of the second drive wire 62. The position of the drive electrode-side end 63 a relative to the main surface-side drive electrode 41 can be arbitrarily changed. In one example, the drive electrode side end 63a may be connected to the main surface side drive electrode 41 so that the distance DW4 and the distance DW5 are equal to each other.

[0150] 18, the drive electrode side end 61a of the first drive wire 61, the drive electrode side end 62a of the second drive wire 62, and the drive electrode side end 63a of the third drive wire 63 are aligned in the vertical direction X. Here, the state in which the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X includes the drive electrode side end portions 61a, 62a, and 63a overlapping with each other in the vertical direction X, and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side end portions 61a, 62a, and 63a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X.

[0151] The drive pad side end 63b of the third drive wire 63 is disposed in the vertical direction X closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The distance DW6 between the drive pad side end 61b and the drive pad side end 63b of the first drive wire 61 is greater than the distance DW4. The distance DW7 between the drive pad side end 62b and the drive pad side end 63b of the second drive wire 62 is greater than the distance DW5. In FIG. 18, the distance DW7 is greater than the distance DW6.

[0152] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the third drive wire 63 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0153] In plan view, the inclination angle of the third drive wire 63 with respect to the longitudinal direction X can be changed arbitrarily. In one example, in plan view, the inclination angle of the third drive wire 63 with respect to the longitudinal direction X may be equal to the inclination angle of the first drive wire 61 with respect to the longitudinal direction X or the inclination angle of the second drive wire 62 with respect to the longitudinal direction X.

[0154] In the second example shown in FIG. 19 , the shape of the semiconductor element 40 in plan view is square. The shape of the main surface side drive electrode 41 (source electrode) formed on the front surface 40a of the semiconductor element 40 is approximately square in plan view. A notch 41b is formed at the end of the semiconductor element 40 on the second side surface 40d and third side surface 40e side. The control electrode 43 is formed in the notch 41b. The shape of the opening 45 formed in the passivation film 44 in plan view is square. As in the second embodiment, the opening 45 exposes a portion of the main surface side drive electrode 41 and a portion of the control electrode 43. The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45.

[0155] The semiconductor device 1 of the second example shown in FIG. 19 has a plurality of drive wires 60, including a first drive wire 61, a second drive wire 62, a third drive wire 63, and a fourth drive wire 64. The third drive wire 63 and the fourth drive wire 64 are arranged between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the plurality of drive wires 60. The first drive wire 61, the second drive wire 62, the third drive wire 63, and the fourth drive wire 64 are arranged at a distance from each other in the horizontal direction Y. In a plan view, the first drive wire 61 is arranged closer to the third side surface 40e of the semiconductor element 40 than the second drive wire 62, the third drive wire 63, and the fourth drive wire 64 in the horizontal direction Y. The second drive wire 62 is arranged closer to the fourth side surface 40f of the semiconductor element 40 than the first drive wire 61, the third drive wire 63, and the fourth drive wire 64 in the horizontal direction Y. The third drive wire 63 is disposed closer to the third side surface 40e of the semiconductor element 40 than the fourth drive wire 64. In this manner, the first drive wire 61 and the second drive wire 62, which constitute the most distant combination of the multiple drive wires 60, are the drive wires located at both ends of the multiple drive wires 60 in the horizontal direction Y.

[0156] The drive electrode side end 61a of the first drive wire 61 is disposed closer to the third sealing resin side surface 53 than the drive pad side end 61b of the first drive wire 61. Specifically, the drive electrode side end 61a overlaps the connecting portion 23a of the drive lead 20 when viewed from the vertical direction X. The drive pad side end 61b overlaps a portion of the drive pad 21 between the connecting portion 23a and the connecting portion 23b when viewed from the vertical direction X.

[0157] The drive electrode side end 62a of the second drive wire 62 is disposed closer to the third sealing resin side surface 53 than the drive pad side end 62b of the second drive wire 62. Specifically, the drive electrode side end 62a overlaps with a portion of the drive pad 21 between the connecting portion 23c and the connecting portion 23d when viewed from the vertical direction X. The drive pad side end 62b overlaps with the connecting portion 23e of the drive lead 20 when viewed from the vertical direction X.

[0158] The third drive wire 63 has a drive electrode side end 63a and a drive pad side end 63b. The drive electrode side end 63a is the end of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end 63b is the end of the third drive wire 63 that is connected to the drive pad 21. The drive electrode side end 63a is arranged closer to the third sealing resin side surface 53 than the drive pad side end 63b. Specifically, the drive electrode side end 63a overlaps with the connecting portion 23b of the drive lead 20 when viewed from the vertical direction X. The drive pad side end 63b overlaps with a portion of the drive pad 21 between the connecting portion 23b and the connecting portion 23c when viewed from the vertical direction X.

[0159] The fourth drive wire 64 has a drive electrode side end 64a and a drive pad side end 64b. The drive electrode side end 64a is the end of the fourth drive wire 64 that is connected to the main surface side drive electrode 41. The drive pad side end 64b is the end of the fourth drive wire 64 that is connected to the drive pad 21. The drive electrode side end 64a is arranged closer to the third sealing resin side surface 53 than the drive pad side end 64b. Specifically, the drive electrode side end 64a overlaps with a portion of the drive pad 21 between the connecting portions 23b and 23c when viewed from the vertical direction X. The drive pad side end 64b overlaps with a portion of the drive pad 21 between the connecting portions 23c and 23d when viewed from the vertical direction X.

[0160] The driving electrode side end portion 61a and the driving electrode side end portion 63a are connected closer to the first exposed end portion 46a than the center of the exposed region 46 of the main surface side driving electrode 41 in the lateral direction Y. The driving electrode side end portion 61a is connected closer to the first exposed end portion 46a than the driving electrode side end portion 63a in the lateral direction Y. The driving electrode side end portion 64a and the driving electrode side end portion 62a are connected closer to the second exposed end portion 46b than the center of the exposed region 46 in the lateral direction Y. The driving electrode side end portion 62a is connected closer to the second exposed end portion 46b than the driving electrode side end portion 64a.

[0161] The drive electrode side end 61a of the first drive wire 61 and the drive electrode side end 64a of the fourth drive wire 64 are offset in the vertical direction X from the drive electrode side end 62a of the second drive wire 62 and the drive electrode side end 63a of the third drive wire 63. Specifically, the drive electrode side end 61a, 64a are arranged closer to the first side surface 40c of the semiconductor element 40 than the drive electrode side end 62a, 63a. Therefore, the length of the first drive wire 61 and the fourth drive wire 64 is longer than the length of the second drive wire 62 and the third drive wire 63. Furthermore, the drive electrode side end 61a and the drive electrode side end 64a are aligned with each other in the vertical direction X and arranged in the horizontal direction Y. The drive electrode side end 62a and the drive electrode side end 63a are aligned with each other in the vertical direction X and arranged in the horizontal direction Y. Here, the state in which the drive electrode side ends 61a, 64a are aligned in the vertical direction X includes both drive electrode side ends 61a, 64a overlapping each other in the vertical direction X and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side ends 61a, 64a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side ends 61a, 64a are aligned in the vertical direction X. Furthermore, the state in which the drive electrode side ends 62a, 63a are aligned in the vertical direction X includes both drive electrode side ends 62a, 63a overlapping each other in the vertical direction X and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side ends 62a, 63a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side ends 62a, 63a are aligned in the vertical direction X.

[0162] The positions of the drive electrode side end portions 61a to 64a in the vertical direction X can be changed as desired. For example, the drive electrode side end portions 61a to 64a may be offset from one another. Alternatively, the drive electrode side end portions 61a to 64a may be aligned with one another in the horizontal direction Y.

[0163] A distance DW10 between an auxiliary line LS1 extending from the drive electrode end 61a in the vertical direction X and an auxiliary line LS9 extending from the drive electrode end 63a in the vertical direction X is smaller than a distance DW11 between the auxiliary line LS9 and an auxiliary line LS11 extending from the drive electrode end 64a in the vertical direction X. A distance DW12 between the auxiliary line LS3 extending from the drive electrode end 62a in the vertical direction X and the auxiliary line LS11 in the horizontal direction Y is slightly smaller than the distance DW10. Note that the positions of the drive electrode end portions 61a-64a in the horizontal direction Y can be changed as desired, as long as the drive electrode end portion 61a is positioned closest to the third sealing resin side surface 53 and the drive electrode end portion 62a is positioned closest to the fourth sealing resin side surface 54. In one example, the drive electrode end portions 61a-64a may be positioned such that the distance DW12 and the distance DW10 are equal to each other.

[0164] The distance DY1 in the horizontal direction Y between auxiliary line LS1 and auxiliary line LS2 extending from drive pad side end 61b in the vertical direction X is smaller than the distance DY2 in the horizontal direction Y between auxiliary line LS3 and auxiliary line LS4 extending from drive pad side end 62b in the vertical direction X. The distance DY3 in the horizontal direction Y between auxiliary line LS9 and auxiliary line LS10 extending from drive pad side end 63b in the vertical direction X is smaller than the distance DY4 in the horizontal direction Y between auxiliary line LS11 and auxiliary line LS12 extending from drive pad side end 64b in the vertical direction X. In FIG. 19 , the distance DY1 is smaller than the distance DY3. The distance DY2 is larger than the distance DY4.

[0165] The drive electrode-side end 61a may be disposed in the lateral direction Y at the limit position on the fourth side face 40f side of the region where wire bonding can be performed as the end of the opening 45 on the third side face 40e side of the semiconductor element 40. The drive pad-side end 61b may be disposed in the lateral direction Y at the limit position on the third sealing resin side face 53 side of the region where wire bonding can be performed as the first end 21a of the drive pad 21.

[0166] Furthermore, the drive electrode-side end 62a may be disposed in the lateral direction Y as the end of the opening 45 on the fourth side surface 40f side of the semiconductor element 40, at the limit position on the fourth side surface 40f side of the area where wire bonding can be performed. The drive pad-side end 62b may be disposed as the second end 21b of the drive pad 21, at the limit position on the fourth sealing resin side surface 54 side of the area where wire bonding can be performed.

[0167] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 in the lateral direction Y gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the fourth drive wire 64 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the third drive wire 63 and the fourth drive wire 64 in the horizontal direction Y gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the fourth drive wire 64 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the distance between them is greater on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the distance between the fourth drive wire 64 and the second drive wire 62 in the horizontal direction Y gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the distance between them is greater on the drive pad 21 side than on the main surface side drive electrode 41 side. In a plan view, the distance between the third drive wire 63 and the second drive wire 62 in the horizontal direction Y gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0168] The drive electrode side end 91 of the sense wire 90 is connected to a portion of the main surface side drive electrode 41 between the control electrode side end 71 of the control wire 70 and the drive electrode side end 61a of the first drive wire 61 in the horizontal direction Y. The drive electrode side end 91 is also connected to an end of the main surface side drive electrode 41 on the second side surface 40d side. In other words, the drive electrode side end 91 is connected to a portion of the main surface side drive electrode 41 adjacent to the control electrode 43 in the horizontal direction Y. This configuration allows the length of the sense wire 90 to be shortened.

[0169] The position of the semiconductor element 40 relative to the inner main body portion 12 can be changed as desired. In a first example, as shown in FIG. 20 , the semiconductor element 40 may be disposed in a portion of the inner main body portion 12 closer to the second sealing resin side surface 52. Specifically, a first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body portion 12 on the second sealing resin side surface 52 side in the vertical direction X is smaller than one-half of a second distance D2 between the semiconductor element 40 and the first wide portion 12f of the inner main body portion 12 in the vertical direction X. The first distance D1 is smaller than one-third of the second distance D2. In FIG. 20 , the first distance D1 is approximately one-sixth of the second distance D2.

[0170] In the horizontal direction Y, the semiconductor element 40 is disposed in the center of the inner main body portion 12. Specifically, a third distance D3 in the horizontal direction Y between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body portion 12 on the side of the third sealing resin side surface 53 is equal to a fourth distance D4 in the horizontal direction Y between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body portion 12 on the side of the fourth sealing resin side surface 54. Here, if the deviation between the third distance D3 and the fourth distance D4 is, for example, within 5% of the third distance D3, it can be said that the third distance D3 is equal to the fourth distance D4.

[0171] With this configuration, the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is reduced, thereby shortening the first drive wire 61 and the second drive wire 62. This reduces the inductance between the main surface drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20. In addition, the reduction in the distance between the opening 45 of the semiconductor element 40 and the sense pad 81 allows the length of the sense wire 90 to be shortened, thereby reducing the inductance of the electrical connection path between the main surface drive electrode 41 and the back surface drive electrode 42.

[0172] In a second example, as shown in FIG. 21 , the semiconductor element 40 may be disposed in a portion of the inner main body 12 closer to the second sealing resin side surface 52 and closer to the fourth sealing resin side surface 54. Specifically, a first distance D1 in the vertical direction X between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body 12 on the second sealing resin side surface 52 side is smaller than one-half of the second distance D2 between the semiconductor element 40 and the first wide portion 12f of the inner main body 12. The first distance D1 is smaller than one-third of the second distance D2. In FIG. 20 , the first distance D1 is approximately one-sixth of the second distance D2.

[0173] In the horizontal direction Y, the semiconductor element 40 is disposed in a portion of the inner main body portion 12 closer to the third side surface 12e. Specifically, a third distance D3 between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body portion 12 on the side of the third sealing resin side surface 53 is greater than a fourth distance D4 between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body portion 12 on the side of the fourth sealing resin side surface 54 in the horizontal direction Y. The fourth distance D4 is less than one-half the third distance D3. The fourth distance D4 is less than one-third the third distance D3. In FIG. 21 , the fourth distance D4 is approximately one-sixth the third distance D3.

[0174] With this configuration, the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is further reduced, thereby further shortening the first drive wire 61 and the second drive wire 62. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0175] The material and diameter of the drive wire 60, the control wire 70, and the sense wire 90 can be changed as desired. In one example, the diameter of at least one of the drive wire 60, the control wire 70, and the sense wire 90 may be different from the diameter of the others. Also, the material of at least one of the drive wire 60, the control wire 70, and the sense wire 90 may be different from the material of the others.

[0176] The position of the sense pad 81 in the thickness direction Z can be changed as desired. The sense pad 81 may be offset from at least one of the drive pad 21 and the control pad 31 in the thickness direction Z. In one example, the sense pad 81 is aligned with the semiconductor element 40 in the thickness direction Z.

[0177] The first wide portion 12f may be omitted from the inner main body portion 12 of the substrate 10. In this case, the protrusion 13 and the first sealing resin side surface 51 of the sealing resin 50 may come into contact with each other in the vertical direction X. The second wide portion 12g may be omitted from the inner main body portion 12 of the substrate 10.

[0178] (Third embodiment) 22 to 31, a third embodiment of the semiconductor device 1 will be described. The semiconductor device 1 of this embodiment differs from the semiconductor device 1 of the first embodiment in the shapes of the substrate 10, the drive leads 20, the control leads 30, and the sealing resin 50. In this embodiment, for convenience, the same components as those in the first embodiment are denoted by the same reference numerals, and their description may be omitted.

[0179] 22, the semiconductor device 1 of this embodiment is a package that conforms to the package outline standard (JEITA standard) TO-247. Specifically, the vertical dimension L1 of the semiconductor device 1 is 19.18 mm to 20.57 mm, the horizontal dimension L2 is 15.75 mm to 16.13 mm, and the thickness dimension L3 is 4.83 mm to 5.21 mm. The semiconductor device 1 is also of a SIP type. As such, the size of the semiconductor device 1 of this embodiment is larger than the size of the semiconductor device 1 of the first embodiment.

[0180] As shown in FIG. 22 , the sealing resin 50 has a flat plate shape. The sealing resin 50 is formed by molding. Each of the side surfaces 51 to 54 of the sealing resin 50 has an inclined surface that is inclined with respect to the thickness direction Z to provide a draft angle that makes it easier to remove a mold when molding the sealing resin 50. Specifically, each of the side surfaces 51 to 54 has a first inclined surface that is provided with a draft angle that makes it easier to remove an upper part of the mold, and a second inclined surface that is provided with a draft angle that makes it easier to remove a lower part of the mold. The upper part of the mold forms the sealing resin top surface 56 and the portions of each of the side surfaces 51 to 54 that are on the sealing resin top surface 56 side. The lower part forms the sealing resin back surface 55 and the portions of each of the side surfaces 51 to 54 that are on the sealing resin back surface 55 side.

[0181] Recesses 58 are formed at both ends of the sealing resin 50 in the horizontal direction Y. The recesses 58 on the third sealing resin side surface 53 side of the sealing resin 50 are recessed in a curved shape from the third sealing resin side surface 53 in the horizontal direction Y. The recesses 58 on the fourth sealing resin side surface 54 side of the sealing resin 50 are recessed in a curved shape from the fourth sealing resin side surface 54 in the horizontal direction Y. The recesses 58 are formed in the thickness direction Z from the sealing resin top surface 56 to the main surface 10a of the substrate 10. In other words, the main surface 10a of the substrate 10 is exposed by the recesses 58. The recesses 58 are provided closer to the first sealing resin side surface 51 than the center of the sealing resin 50 in the vertical direction X.

[0182] A through hole 59 is formed in the center of the sealing resin 50 in the horizontal direction Y. The through hole 59 penetrates the sealing resin 50 in the thickness direction Z. The through hole 59 is provided closer to the first sealing resin side surface 51 than the center of the sealing resin 50 in the vertical direction X. The through hole 59 has a circular shape in a plan view. In this embodiment, the through hole 59 is provided so as to be at the same position as the recess 58 in the vertical direction X. By inserting a bolt or a screw into the through hole 59, the semiconductor device 1 can be attached to a circuit board or a heat sink (both not shown).

[0183] Fig. 23 is a view of the semiconductor device 1 as viewed from the sealing resin top surface 56 in the thickness direction Z. In Fig. 23, for convenience, the sealing resin 50 is indicated by a two-dot chain line, and the components inside the sealing resin 50 are indicated by a solid line. As shown in Fig. 23, in a plan view, the shape of the sealing resin 50 is a substantially rectangular shape with the longitudinal direction X as the long side direction and the lateral direction Y as the short side direction.

[0184] 22 and 23, the substrate 10 has a substrate main body 11 disposed in a sealing resin 50, and lead portions 16. The substrate 10 is made of, for example, aluminum (Al) or copper (Cu).

[0185] The substrate main body 11 has a through hole 10c. The through hole 10c is located closer to the first sealing resin side surface 51 than the center of the substrate 10 in the vertical direction X. The through hole 10c has a circular shape in plan view. The through hole 10c is located concentrically with a through hole 59 in the sealing resin 50. The diameter of the through hole 10c is larger than the diameter of the through hole 59. The substrate main body 11 also has a pair of first recesses 10d recessed in a semicircular shape in plan view and a second recess 10e recessed in a rectangular shape in plan view. The pair of first recesses 10d are located closer to the first sealing resin side surface 51 than the center of the substrate 10 in the vertical direction X. The pair of first recesses 10d are exposed to the outside by a recess 58 in the sealing resin 50. The second recess 10e is located at an end of the substrate main body 11 on the side of the first sealing resin side surface 51.

[0186] The substrate main body 11 is provided with a plurality of flange portions 19. The plurality of flange portions 19 include a first flange portion 19a, a second flange portion 19b, and a third flange portion 19c. The first flange portion 19a protrudes from the first side surface 11a of the substrate main body 11 toward the second sealing resin side surface 52. The second flange portion 19b protrudes from the second side surface 11b of the substrate main body 11 toward the third sealing resin side surface 53 in a region of the substrate main body 11 closer to the second sealing resin side surface 52 than the through hole 10c in the vertical direction X. The third flange portion 19c protrudes from the third side surface 11c of the substrate main body 11 toward the fourth sealing resin side surface 54 in a region of the substrate main body 11 closer to the second sealing resin side surface 52 than the through hole 10c in the vertical direction X.

[0187] 24, the rear surface 10b of the substrate 10 (the rear surface of the substrate main body 11) is exposed from the sealing resin rear surface 55. This improves the heat dissipation performance of the substrate 10. The outer periphery of the through hole 10c of the substrate 10 is covered with the sealing resin 50.

[0188] 23 , the lead portion 16 extends from the end portion of the substrate main body 11 on the first side surface 12c side toward the second sealing resin side surface 52 and protrudes from the second sealing resin side surface 52. The lead portion 16 can be divided into a terminal portion 17 protruding from the second sealing resin side surface 52 and a connecting portion 18 connecting the terminal portion 17 and the substrate main body 11.

[0189] The connecting portion 18 is located at the center of the substrate main body portion 11 in the horizontal direction Y. The connecting portion 18 has an inclined portion 18a. The inclined portion 18a is inclined toward the sealing resin top surface 56 as it extends from the substrate main body portion 11 toward the second sealing resin side surface 52. An intermediate portion 18b of the connecting portion 18 between the inclined portion 18a and the terminal portion 17 is located closer to the sealing resin top surface 56 than the substrate main body portion 11. In a plan view, the intermediate portion 18b extends along the vertical direction X. A portion of the intermediate portion 18b that contacts the second sealing resin side surface 52 is located at the center of the second sealing resin side surface 52 in the horizontal direction Y.

[0190] The terminal portion 17 protrudes from the center of the second sealing resin side surface 52 in the lateral direction Y. The terminal portion 17 is at the same position as the intermediate portion 18b in the thickness direction Z. In other words, the terminal portion 17 is located closer to the sealing resin top surface 56 than the substrate main body portion 11.

[0191] As shown in FIG. 23 , in a plan view, the drive lead 20 and the control lead 30 are arranged closer to the second sealing resin side surface 52 of the sealing resin 50 than the substrate 10, while being spaced apart in the vertical direction X with respect to the substrate 10. The drive lead 20 and the control lead 30 are arranged spaced apart from each other in the horizontal direction Y. A lead portion 16 is arranged between the drive lead 20 and the control lead 30 in the horizontal direction Y. In this embodiment, in a plan view, the drive lead 20 and the control lead 30 have shapes that are symmetrical with respect to a center line C extending from the center of the semiconductor device 1 in the vertical direction X along the vertical direction X. Note that the shapes of the drive lead 20 and the control lead 30 in a plan view can be changed as desired. In one example, the shape of the drive lead 20 in a plan view and the shape of the control lead 30 in a plan view may be different from each other.

[0192] The drive pad 21 and the connecting portion 23 of the drive lead 20 are disposed between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The drive pad 21 and the connecting portion 23 are disposed closer to the fourth sealing resin side surface 54 than the center of the sealing resin 50 in the horizontal direction Y. The drive pad 21 is disposed closer to the fourth sealing resin side surface 54 than the semiconductor element 40. The shape of the drive pad 21 in plan view is a substantially rectangular shape with the longer side direction being the horizontal direction Y and the shorter side direction being the vertical direction X. In this embodiment, the size of the drive pad 21 in the horizontal direction Y is larger than the size of the opening 45 in the horizontal direction Y. The size of the drive pad 21 in the horizontal direction Y is also larger than the size of the semiconductor element 40 in the horizontal direction Y. In the thickness direction Z, the drive pad 21 is located closer to the sealing resin top surface 56 than the substrate main body portion 11. In the thickness direction Z, the drive pad 21 is located closer to the sealing resin top surface 56 than the semiconductor element 40. In this embodiment, the drive pad 21 is located at the same position in the thickness direction Z as the middle portion 18b of the lead portion 16.

[0193] The connecting portion 23 is continuous with the end portion of the drive pad 21 on the second sealing resin side surface 52 side. The connecting portion 23 is located closer to the fourth sealing resin side surface 54 than the center portion of the drive pad 21 in the horizontal direction Y. The drive terminal 22 constitutes a source terminal. The drive terminal 22 protrudes from the second sealing resin side surface 52.

[0194] The control pad 31 and the connecting portion 33 are arranged between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The control pad 31 and the connecting portion 33 are arranged closer to the third sealing resin side surface 53 than the center of the sealing resin 50 in the horizontal direction Y. In the thickness direction Z, the control pad 31 is located closer to the sealing resin top surface 56 than the substrate main body portion 11. Also, in the thickness direction Z, the control pad 31 is located closer to the sealing resin top surface 56 than the semiconductor element 40. In this embodiment, the control pad 31 is located at the same position as the intermediate portion 18b of the lead portion 16 in the thickness direction Z.

[0195] The connecting portion 33 is continuous with the end portion of the control pad 31 on the second sealing resin side surface 52 side. The connecting portion 33 is located closer to the third sealing resin side surface 53 of the control pad 31 in the lateral direction Y. The control terminal 32 constitutes a gate terminal. The control terminal 32 protrudes from the second sealing resin side surface 52.

[0196] As in the first embodiment, a SiC MOSFET is used for the semiconductor element 40. As in the first embodiment, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundred kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In this embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz. The shape and size of the semiconductor element 40 are similar to those of the semiconductor element 40 of the first embodiment.

[0197] The semiconductor element 40 is mounted on the substrate main body 11 (main surface 10a of the substrate 10) by solder SD. As shown in Fig. 23, in this embodiment, the semiconductor element 40 is arranged closer to the lead portion 16 than the center of the substrate main body 11 in the vertical direction X. Specifically, a first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the substrate main body 11 on the second sealing resin side surface 52 side is smaller than a second distance D2 between the semiconductor element 40 and the edge of the through hole 10c of the substrate main body 11 on the second sealing resin side surface 52 side.

[0198] The semiconductor element 40 is disposed in the center of the substrate main body 11 in the horizontal direction Y. Specifically, a third distance D3 between the semiconductor element 40 and the second side surface 11b of the substrate main body 11 is equal to a fourth distance D4 between the semiconductor element 40 and the third side surface 11c of the substrate main body 11. Here, if the deviation between the third distance D3 and the fourth distance D4 is, for example, within 5% of the third distance D3, it can be said that the third distance D3 and the fourth distance D4 are equal to each other.

[0199] The semiconductor device 1 includes a plurality of drive wires 60 and one control wire 70. In this embodiment, the plurality of drive wires 60 is composed of two drive wires: a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 form the most distant combination of the plurality of drive wires 60. The first drive wire 61 is disposed closer to the control wire 70 than the second drive wire 62. The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21 while being spaced apart from each other. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged spaced apart in the horizontal direction Y. The first drive wire 61 and the second drive wire 62 are drive wires at both ends of the plurality of drive wires 60 in the horizontal direction Y.

[0200] The first drive wire 61 and the second drive wire 62 are made of the same metal. In this embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 is, for example, within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In this embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is, for example, within 5% of the wire diameter of the control wire 70, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70.

[0201] The first drive wire 61 and the second drive wire 62 each connect the main surface side drive electrode 41 and the drive pad 21 of the semiconductor element 40. The first drive wire 61 and the second drive wire 62 each connect the main surface side drive electrode 41 and the drive pad 21 by, for example, wire bonding.

[0202] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 increases as the wire moves from the main surface side drive electrode 41 toward the drive pad 21 side. The configuration of the first drive wire 61 and the second drive wire 62 will be described in detail below.

[0203] 25, the drive electrode side end 61a of the first drive wire 61 is disposed closer to the third sealing resin side surface 53 than the drive pad side end 61b of the first drive wire 61. The drive electrode side end 62a of the second drive wire 62 is disposed closer to the third sealing resin side surface 53 than the drive pad side end 62b of the second drive wire 62. In a plan view, the distance DW2 between the drive pad side end 61b and the drive pad side end 62b is greater than the distance DW1 between the drive electrode side end 61a and the drive electrode side end 62a.

[0204] The distance DY1 is the distance in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode side end 61a in the vertical direction X and an auxiliary line LS2 extending from the drive pad side end 61b in the vertical direction X, and the distance DY2 is the distance in the horizontal direction Y between an auxiliary line LS3 extending from the drive electrode side end 62a in the vertical direction X and an auxiliary line LS4 extending from the drive pad side end 62b in the vertical direction X. In this case, the distance DY2 is greater than the distance DY1.

[0205] The drive electrode side end 61a of the first drive wire 61 is connected to the first exposed end 46a side of the center of the exposed region 46 of the main surface side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode side end 61a is connected to the first exposed end 46a. Specifically, the drive electrode side end 61a is connected to a portion of the main surface side drive electrode 41 adjacent to the control electrode 43 in the horizontal direction Y, i.e., a portion that forms the bottom of the recess 41a (see FIG. 2) of the main surface side drive electrode 41.

[0206] The drive pad side end 61b of the first drive wire 61 is connected to the first end 21a side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 61b is connected to the first end 21a of the drive pad 21. In one example, the drive pad side end 61b is arranged so as to be at the limit position on the third sealing resin side surface 53 side of the area where wire bonding can be performed as the first end 21a of the drive pad 21. The drive pad side end 61b is connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X.

[0207] The drive electrode side end 62a of the second drive wire 62 is connected to the second exposed end 46b side of the central portion of the exposed region 46 of the main surface side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode side end 62a is connected to the second exposed end 46b. In one example, the drive electrode side end 62a is arranged so as to be at the limit position on the fourth side face 40f side of the region where wire bonding can be performed as the end of the opening 45 on the fourth side face 40f side of the semiconductor element 40 in the horizontal direction Y. In the vertical direction X, the drive electrode side end 62a is arranged in a state aligned with the drive electrode side end 61a of the first drive wire 61. Note that the state in which the drive electrode side end 62a and the drive electrode side end 61a are aligned in the vertical direction X includes cases in which the drive electrode side end 61a, 62a overlap each other in the vertical direction X, and cases in which they partially overlap due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment in the vertical direction X of the drive electrode side ends 61a, 62a is approximately the same as the variation in wire bonding, then the drive electrode side ends 61a, 62a can be said to be aligned in the vertical direction X.

[0208] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 62b is connected to the second end 21b of the drive pad 21. In one example, the drive pad side end 62b is arranged so as to be at the limit position on the fourth sealing resin side surface 54 side of the area where wire bonding can be performed as the second end 21b of the drive pad 21. The drive pad side end 62b is arranged in a portion of the drive pad 21 closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X.

[0209] The control wire 70 connects the control electrode 43 of the semiconductor element 40 to the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31 by, for example, wire bonding. As in the first embodiment, the control wire 70 is made of the same material as the first drive wire 61 and the second drive wire 62. The wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62. Here, if the deviation between the wire diameter of the control wire 70 and the wire diameters of the first drive wire 61 and the second drive wire 62 is within, for example, 5% of the wire diameter of the control wire 70, it can be said that the wire diameter of the control wire 70 is equal to the wire diameters of the first drive wire 61 and the second drive wire 62. The control wire 70 has a control electrode-side end 71 and a control pad-side end 72. The control electrode-side end 71 is located closer to the fourth sealing resin side surface 54 than the control pad-side end 72.

[0210] A distance DW3 between the control electrode-side end 71 and the drive electrode-side end 61a of the first drive wire 61 is smaller than the distance DW1. A distance DY3 between an auxiliary line LS5 extending from the control electrode-side end 71 in the vertical direction X and an auxiliary line LS6 extending from the control pad-side end 72 in the vertical direction X is larger than the distance DY1 and smaller than the distance DY2. Note that the semiconductor device 1 of this embodiment can achieve the same effects as those of (1-1) to (1-7) of the first embodiment.

[0211] (Modification of the third embodiment) The semiconductor device 1 of the third embodiment can be modified, for example, as follows. The following modifications can be combined as long as no technical contradiction occurs. In the following modifications, parts common to the third embodiment are assigned the same reference numerals as in the third embodiment, and their description will be omitted.

[0212] The number of drive wires 60 is not limited to two and can be changed arbitrarily. In one example, as shown in FIG. 26 , the multiple drive wires 60 may be composed of three drive wires: a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the multiple drive wires 60. The first drive wire 61 and the second drive wire 62 connect the main surface drive electrode 41 of the semiconductor element 40 and the drive pad 21 while being spaced apart from each other. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged spaced apart in the horizontal direction Y. In this way, the first drive wire 61 and the second drive wire 62, which constitute the most distant combination of the multiple drive wires 60, are the drive wires at both ends of the multiple drive wires 60 in the horizontal direction Y.

[0213] The third drive wire 63 has a drive electrode side end 63a and a drive pad side end 63b. The drive electrode side end 63a is the end of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end 63b is the end of the third drive wire 63 that is connected to the drive pad 21. The drive pad side end 63b is positioned closer to the fourth sealing resin side surface 54 than the drive electrode side end 63a.

[0214] 26, the distance DW4 between the drive electrode-side end 63a and the drive electrode-side end 61a of the first drive wire 61 is equal to the distance DW5 between the drive electrode-side end 63a and the drive electrode-side end 62a of the second drive wire 62. Here, if the deviation between the distance DW4 and the distance DW5 is, for example, within 5% of the distance DW4, then the distances DW4 and DW5 can be said to be equal. The distances DW4 and DW5 are greater than the distance DW3 between the control electrode-side end 71 of the control wire 70 and the drive electrode-side end 61a of the first drive wire 61.

[0215] The position of the drive electrode side end 63a in the lateral direction Y can be changed arbitrarily. In one example, the drive electrode side end 63a may be connected to the main surface side drive electrode 41 so that the distance DW4 and the distance DW5 are different from each other.

[0216] 26, the drive electrode side end 61a of the first drive wire 61, the drive electrode side end 62a of the second drive wire 62, and the drive electrode side end 63a of the third drive wire 63 are aligned in the vertical direction X. Here, the state in which the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X includes the drive electrode side end portions 61a, 62a, and 63a overlapping with each other in the vertical direction X, and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side end portions 61a, 62a, and 63a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X.

[0217] The drive pad side end 63b of the third drive wire 63 is disposed closer to the semiconductor element 40 in the vertical direction X than the center of the drive pad 21 in the vertical direction X. A distance DW6 between the drive pad side end 61b and the drive pad side end 63b of the first drive wire 61 is greater than the distance DW4. A distance DW7 between the drive pad side end 62b and the drive pad side end 63b of the second drive wire 62 is greater than the distance DW5.

[0218] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the third drive wire 63 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0219] The size of the semiconductor element 40 can be changed as desired. In a first example, as shown in FIG. 27, the size of the semiconductor element 40 may be larger than the size of the semiconductor element 40 of the third embodiment. In a second example, as shown in FIG. 29, the size of the semiconductor element 40 may be larger than the size of the semiconductor element 40 of FIG. 27.

[0220] In the first example shown in Figure 27, the size of the semiconductor element 40 in the vertical direction X and the horizontal direction Y are both larger than the size of the semiconductor element 40 of the third embodiment. Furthermore, as the size of the semiconductor element 40 increases, the size of the opening 45 formed in the surface 40a can also be increased in both the vertical direction X and the horizontal direction Y. In Figure 27, the size of the opening 45 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. The size of the drive pad 21 in the horizontal direction Y is larger than the size of the semiconductor element 40 in the horizontal direction Y.

[0221] Similar to the third embodiment, the semiconductor device 1 includes a first drive wire 61 and a second drive wire 62 as the plurality of drive wires 60. The drive electrode-side end 61a of the first drive wire 61 is connected to the first exposed end 46a of the exposed region 46, similar to the drive electrode-side end 61a of the third embodiment. The drive pad-side end 61b of the first drive wire 61 is connected to the first end 21a of the drive pad 21, similar to the drive pad-side end 61b of the third embodiment. The drive electrode-side end 62a of the second drive wire 62 is connected to the end of the opening 45 on the fourth side surface 40f side of the semiconductor element 40 in the horizontal direction Y, similar to the drive electrode-side end 62a of the third embodiment. The drive pad-side end 62b of the second drive wire 62 is connected to the second end 21b of the drive pad 21, similar to the drive pad-side end 62b of the third embodiment. Similar to the third embodiment, the drive electrode-side end 61a and the drive electrode-side end 62a are aligned with each other in the vertical direction X and arranged in the horizontal direction Y. The drive pad side end 61b and the drive pad side end 62b are connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center portion in the vertical direction X.

[0222] In a plan view, the distance DW2 between the drive pad side end 61b and the drive pad side end 62b is larger than the distance DW1 in the horizontal direction Y between the drive electrode side end 61a and the drive electrode side end 62a. In Fig. 27, the distance DY1 in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode side end 61a in the vertical direction X and an auxiliary line LS2 extending from the drive pad side end 61b in the vertical direction X is smaller than the distance DY2 in the horizontal direction Y between an auxiliary line LS3 extending from the drive electrode side end 62a in the vertical direction X and an auxiliary line LS4 extending from the drive pad side end 62b in the vertical direction X. Thus, in a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther away from the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0223] According to this configuration, the distance between the first drive wire 61 and the second drive wire 62 can be increased, thereby reducing the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20.

[0224] In the modified example of FIG. 27 , the number of drive wires 60 is not limited to two and can be changed arbitrarily. In one example, as shown in FIG. 28 , the multiple drive wires 60 may be composed of three drive wires: a first drive wire 61, a second drive wire 62, and a third drive wire 63. The third drive wire 63 is disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the multiple drive wires 60. The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21 while being spaced apart from each other. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged spaced apart in the horizontal direction Y. The first drive wire 61 and the second drive wire 62 are drive wires at both ends of the multiple drive wires 60 in the horizontal direction Y.

[0225] The third drive wire 63 has a drive electrode-side end 63a and a drive pad-side end 63b. A distance DW4 between the drive electrode-side end 63a and the drive electrode-side end 61a of the first drive wire 61 is equal to a distance DW5 between the drive electrode-side end 63a and the drive electrode-side end 62a of the second drive wire 62. Here, if the deviation between the distances DW4 and DW5 is within 5% of the distance DW4, for example, then the distances DW4 and DW5 can be said to be equal.

[0226] The position of the driving electrode-side end portion 63a relative to the main surface-side driving electrode 41 can be changed arbitrarily. In one example, the driving electrode-side end portion 63a may be connected to the main surface-side driving electrode 41 so that the distance DW4 and the distance DW5 are different from each other.

[0227] 28, the drive electrode side end 61a of the first drive wire 61, the drive electrode side end 62a of the second drive wire 62, and the drive electrode side end 63a of the third drive wire 63 are aligned in the vertical direction X. Here, the state in which the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X includes the drive electrode side end portions 61a, 62a, and 63a overlapping with each other in the vertical direction X, and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side end portions 61a, 62a, and 63a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side end portions 61a, 62a, and 63a are aligned in the vertical direction X.

[0228] The drive pad side end 63b of the third drive wire 63 is located closer to the semiconductor element 40 than the center of the drive pad 21 in the longitudinal direction X. The distance DW6 between the drive pad side end 61b and the drive pad side end 63b of the first drive wire 61 is greater than the distance DW4. The distance DW7 between the drive pad side end 62b and the drive pad side end 63b of the second drive wire 62 is greater than the distance DW5.

[0229] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the third drive wire 63 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the third drive wire 63 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0230] In plan view, the inclination angle of the third drive wire 63 with respect to the longitudinal direction X can be changed arbitrarily. In one example, the inclination angle of the third drive wire 63 with respect to the longitudinal direction X may be equal to the inclination angle of the first drive wire 61 with respect to the longitudinal direction X or the inclination angle of the second drive wire 62 with respect to the longitudinal direction X.

[0231] 29, semiconductor element 40 has a square shape in plan view. Main surface side drive electrode 41 (source electrode) formed on front surface 40a of semiconductor element 40 has notch 41b formed at the end on the second side surface 40d and third side surface 40e side of semiconductor element 40. Control electrode 43 is formed in notch 41b.

[0232] The semiconductor device 1 of the second example shown in FIG. 29 has a plurality of drive wires 60, including a first drive wire 61, a second drive wire 62, a third drive wire 63, and a fourth drive wire 64. The third drive wire 63 and the fourth drive wire 64 are arranged between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 form the most distant combination of the plurality of drive wires 60. The first drive wire 61 and the second drive wire 62 are drive wires at both ends of the plurality of drive wires 60 in the horizontal direction Y. When viewed from the vertical direction X, the drive wires 61 to 64 are arranged to overlap each other. In a plan view, the first drive wire 61 and the third drive wire 63 intersect. The fourth drive wire 64 and the second drive wire 62 intersect.

[0233] The drive electrode side end 61a of the first drive wire 61 is arranged closer to the third sealing resin side surface 53 than the drive pad side end 61b of the first drive wire 61. The drive electrode side end 62a of the second drive wire 62 is arranged closer to the third sealing resin side surface 53 than the drive pad side end 62b of the second drive wire 62.

[0234] The third drive wire 63 has a drive electrode side end 63a and a drive pad side end 63b. The drive electrode side end 63a is the end of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end 63b is the end of the third drive wire 63 that is connected to the drive pad 21. The fourth drive wire 64 has a drive electrode side end 64a and a drive pad side end 63b. The drive electrode side end 64a is the end of the fourth drive wire 64 that is connected to the main surface side drive electrode 41. The drive pad side end 64b is the end of the fourth drive wire 64 that is connected to the drive pad 21.

[0235] The drive electrode side end 61a of the first drive wire 61 is arranged closer to the third side surface 40e than the drive electrode side end 61b to 61d of each of the drive wires 62 to 64. The drive electrode side end 63a of the third drive wire 63 is arranged closer to the third side surface 40e than the drive electrode side end 64a of the fourth drive wire 64 and the drive electrode side end 62a of the second drive wire 62. The drive electrode side end 64a is arranged closer to the third side surface 40e than the drive electrode side end 62a. The drive electrode side end 61a and the drive electrode side end 63a are connected closer to the first exposed end 46a than the center of the exposed region 46 of the main surface side drive electrode 41 in the lateral direction Y. The drive electrode side end 61a is connected closer to the first exposed end 46a than the drive electrode side end 63a in the lateral direction Y. The driving electrode side end portion 64a and the driving electrode side end portion 62a are connected to the second exposed end portion 46b side from the center portion of the exposed region 46 in the lateral direction Y. The driving electrode side end portion 62a is connected to the second exposed end portion 46b side from the driving electrode side end portion 64a.

[0236] The drive electrode side end 61a of the first drive wire 61 and the drive electrode side end 64a of the fourth drive wire 64 are offset in the vertical direction X from the drive electrode side end 62a of the second drive wire 62 and the drive electrode side end 63a of the third drive wire 63. The drive electrode side end 61a and the drive electrode side end 64a are aligned with each other in the vertical direction X. The drive electrode side end 62a and the drive electrode side end 63a are aligned with each other in the vertical direction X. Specifically, the drive electrode side end portions 61a and 64a are arranged closer to the first side surface 40c of the semiconductor element 40 than the drive electrode side end portions 62a and 63a. Therefore, the lengths of the first drive wire 61 and the fourth drive wire 64 are longer than the lengths of the second drive wire 62 and the third drive wire 63. Here, the state in which the drive electrode side ends 61a, 64a are aligned in the vertical direction X includes both drive electrode side ends 61a, 64a overlapping each other in the vertical direction X and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side ends 61a, 64a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side ends 61a, 64a are aligned in the vertical direction X. Furthermore, the state in which the drive electrode side ends 62a, 63a are aligned in the vertical direction X includes both drive electrode side ends 62a, 63a overlapping each other in the vertical direction X and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode side ends 62a, 63a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode side ends 62a, 63a are aligned in the vertical direction X.

[0237] The positions of the drive electrode side end portions 61a to 64a in the vertical direction X can be changed as desired. For example, the drive electrode side end portions 61a to 64a may be offset from one another. Alternatively, the drive electrode side end portions 61a to 64a may be aligned with one another in the horizontal direction Y.

[0238] The drive pad side end 61b of the first drive wire 61 is arranged closer to the third sealing resin side surface 53 than the drive pad side end 62b-64b of each of the drive wires 62-64. The drive pad side end 63b of the third drive wire 63 is arranged closer to the third sealing resin side surface 53 than the drive pad side end 64b of the fourth drive wire 64 and the drive pad side end 62b of the second drive wire 62. The drive pad side end 64b is arranged closer to the third sealing resin side surface 53 than the drive pad side end 62b. The drive pad side end 61b and the drive pad side end 63b are connected to the first end 21a side of the center of the drive pad 21 in the lateral direction Y. The drive pad side end 61b is connected to the first end 21a side of the drive pad side end 63b. The drive pad side end 64b and the drive pad side end 62b are connected to the second end 21b side of the center of the drive pad 21 in the lateral direction Y. The drive pad side end 62b is connected to the second end 21b side of the drive pad side end 62b.

[0239] A distance DW10 in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode side end 61a in the vertical direction X and an auxiliary line LS9 extending from the drive electrode side end 63a in the vertical direction X is smaller than a distance DW11 in the horizontal direction Y between the auxiliary line LS9 and an auxiliary line LS11 extending from the drive electrode side end 64a in the vertical direction X. A distance DW12 in the horizontal direction Y between the auxiliary line LS3 extending from the drive electrode side end 62a in the vertical direction X and the auxiliary line LS11 is slightly smaller than the distance DW10. The positions of the drive electrode side end portions 61a to 64a in the horizontal direction Y can be changed as desired, as long as the drive electrode side end portion 61a is located closest to the third sealing resin side surface 53 and the drive electrode side end portion 62a is located closest to the fourth sealing resin side surface 54. In one example, the drive electrode side ends 61a to 64a may be arranged so that the distance DW12 and the distance DW10 are equal to each other.

[0240] The distance DY1 in the horizontal direction Y between auxiliary line LS1 and auxiliary line LS2 extending from drive pad side end 61b in the vertical direction X is smaller than the distance DY2 in the horizontal direction Y between auxiliary line LS3 and auxiliary line LS4 extending from drive pad side end 62b in the vertical direction X. The distance DY3 in the horizontal direction Y between auxiliary line LS9 and auxiliary line LS10 extending from drive pad side end 63b in the vertical direction X is smaller than the distance DY4 in the horizontal direction Y between auxiliary line LS11 and auxiliary line LS12 extending from drive pad side end 64b in the vertical direction X. In FIG. 29 , the distance DY1 is smaller than the distance DY3. The distance DY2 is larger than the distance DY4.

[0241] Drive electrode-side end 61a may be arranged to be the limiting position on the fourth side surface 40f side of the area where wire bonding is possible within first exposed end 46a of exposed region 46 of main-surface-side drive electrode 41 in horizontal direction Y. Drive pad-side end 61b may be arranged to be the limiting position on the third sealing resin side surface 53 side of the area where wire bonding is possible as first end 21a of drive pad 21.

[0242] Furthermore, drive electrode-side end 62a may be disposed at the limit position on the fourth side surface 40f side of the region where wire bonding is possible in second exposed end 46b of exposed region 46 of main-surface-side drive electrode 41 in horizontal direction Y. Drive pad-side end 62b may be disposed at the limit position on the fourth sealing resin side surface 54 side of the region where wire bonding is possible as second end 21b of drive pad 21.

[0243] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 in the horizontal direction Y gradually increases from the main surface side drive electrode 41 toward the drive pad 21.

[0244] The position of the semiconductor element 40 relative to the substrate main body 11 can be changed as desired. In a first example, as shown in FIG. 30, the semiconductor element 40 may be disposed in a portion of the substrate main body 11 closer to the second sealing resin side surface 52. Specifically, a first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the substrate main body 11 on the second sealing resin side surface 52 side in the vertical direction X is smaller than one-half of a second distance D2 between the semiconductor element 40 and the end of the through hole 10c of the substrate main body 11 on the second sealing resin side surface 52 side in the vertical direction X. The first distance D1 is smaller than one-third of the second distance D2. In FIG. 30, the first distance D1 is approximately one-seventh of the second distance D2.

[0245] In the horizontal direction Y, the semiconductor element 40 is disposed in the center of the substrate main body 11. Specifically, a third distance D3 in the horizontal direction Y between the semiconductor element 40 and the edge of the second flange portion 19b of the substrate main body 11 on the third sealing resin side surface 53 side is equal to a fourth distance D4 in the horizontal direction Y between the semiconductor element 40 and the edge of the third flange portion 19c of the substrate main body 11 on the fourth sealing resin side surface 54 side.

[0246] With this configuration, the distance between the opening 45 of the semiconductor element 40 and the drive pad 21 is reduced, thereby shortening the first drive wire 61 and the second drive wire 62. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0247] In a second example, as shown in FIG. 31 , the semiconductor element 40 may be disposed in a portion of the substrate main body 11 closer to the second sealing resin side surface 52 and closer to the fourth sealing resin side surface 54. Specifically, a first distance D1 in the vertical direction X between the semiconductor element 40 and the edge of the first flange portion 19a of the substrate main body 11 on the second sealing resin side surface 52 side is smaller than one-half of a second distance D2 in the vertical direction X between the semiconductor element 40 and the end of the through-hole 10c of the substrate main body 11 on the second sealing resin side surface 52 side. The first distance D1 is smaller than one-third of the second distance D2. In FIG. 31 , the first distance D1 is approximately one-seventh of the second distance D2. Furthermore, a third distance D3 in the horizontal direction Y between the semiconductor element 40 and the edge of the second flange portion 19b of the substrate main body 11 on the side of the third sealing resin side surface 53 is greater than a fourth distance D4 in the horizontal direction Y between the semiconductor element 40 and the edge of the third flange portion 19c of the substrate main body 11 on the side of the fourth sealing resin side surface 54. The fourth distance D4 is smaller than 1 / 2 of the third distance D3. The fourth distance D4 is smaller than 1 / 3 of the third distance D3. In FIG. 31 , the fourth distance D4 is approximately 1 / 10 of the third distance D3.

[0248] With this configuration, the distance between the semiconductor element 40 and the drive pad 21 is further reduced, thereby further shortening the first drive wire 61 and the second drive wire 62. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0249] The lead portions 16 may be omitted from the substrate 10 of the semiconductor device 1 of the third embodiment. In this case, the drive pad 21 and the control pad 31 are adjacent to each other in the horizontal direction Y. The size of the drive pad 21 in the horizontal direction Y may be increased by the amount of the omitted lead portions 16. With this configuration, the distance DW2 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62 can be increased, thereby reducing the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0250] (Fourth embodiment) A fourth embodiment of the semiconductor device 1 will be described with reference to Fig. 32. The semiconductor device 1 of this embodiment differs from the semiconductor device 1 of the first embodiment mainly in that a Schottky barrier diode is mounted as the semiconductor element 40 instead of a MOSFET, and that a first drive lead 20C and a second drive lead 20D are provided instead of the drive lead 20 and the control lead 30. In this embodiment, for convenience, the same components as those in the first embodiment are denoted by the same reference numerals, and their description may be omitted.

[0251] 32, in a plan view, the first drive lead 20C and the second drive lead 20D are arranged closer to the second sealing resin side surface 52 of the sealing resin 50 than the substrate 10, while being spaced apart in the vertical direction X with respect to the substrate 10. The first drive lead 20C and the second drive lead 20D are arranged spaced apart from each other in the horizontal direction Y. A lead portion 16 is arranged between the first drive lead 20C and the second drive lead 20D in the horizontal direction Y. In a plan view, the first drive lead 20C and the second drive lead 20D are shaped symmetrically with respect to a center line C extending from the center of the semiconductor device 1 in the vertical direction X to the center line C along the vertical direction X. In the following explanation, the components of the first drive lead 20C and the second drive lead 20D will be explained with the letters C and D added after their reference numerals.

[0252] The first drive lead 20C is arranged so as to be on the third sealing resin side surface 53 side with respect to the lead portion 16. The first drive lead 20C has a first drive pad 21C, a first drive terminal 22C, and a first connecting portion 23C that connects the first drive pad 21C and the first drive terminal 22C. The first drive pad 21C and the first connecting portion 23C are arranged between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The first drive pad 21C and the first connecting portion 23C are arranged closer to the third sealing resin side surface 53 than the center of the sealing resin 50 in the horizontal direction Y. The first drive terminal 22C constitutes an anode terminal.

[0253] The shape of first drive pad 21C in plan view is a substantially rectangular shape with its longer side oriented in the horizontal direction Y and its shorter side oriented in the vertical direction X. First drive pad 21C has first end 21c and second end 21d, which are opposite ends in the horizontal direction Y. First end 21c is the end of first drive pad 21C on the side of third sealing resin side surface 53. Second end 21d is the end of first drive pad 21C on the side of fourth sealing resin side surface 54.

[0254] The second drive lead 20D is arranged so as to be on the fourth sealing resin side surface 54 side with respect to the lead portion 16. The second drive lead 20D has a second drive pad 21D, a second drive terminal 22D, and a second connecting portion 23D that connects the second drive pad 21D and the second drive terminal 22D. The second drive pad 21D and the second connecting portion 23D are arranged between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The second drive pad 21D and the second connecting portion 23D are arranged closer to the fourth sealing resin side surface 54 than the center of the sealing resin 50 in the horizontal direction Y. The second drive terminal 22D constitutes an anode terminal.

[0255] The second drive pad 21D has a first end 21e and a second end 21f, which are opposite ends in the horizontal direction Y. The first end 21e is the end of the second drive pad 21D on the third sealing resin side surface 53 side. The second end 21f is the end of the second drive pad 21D on the fourth sealing resin side surface 54 side.

[0256] The first drive pad 21C and the second drive pad 21D are each arranged closer to the sealing resin top surface 56 than the main surface 10a of the substrate 10 in the thickness direction Z. The first drive pad 21C and the second drive pad 21D are each arranged closer to the sealing resin top surface 56 than the surface 40a of the semiconductor element 40 in the thickness direction Z.

[0257] The semiconductor element 40 includes SiC. In this embodiment, a Schottky barrier diode is used as the semiconductor element 40. The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is a rectangle with the horizontal direction Y as the long side direction and the vertical direction X as the short side direction. In this embodiment, the semiconductor element 40 is disposed in the center of the inner main body 12. Specifically, in a plan view, a first distance D1 between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body 12 on the second sealing resin side surface 52 side is equal to a second distance D2 between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12. Furthermore, a third distance D3 between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body 12 on the third sealing resin side surface 53 side is equal to a fourth distance D4 between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body 12 on the fourth sealing resin side surface 54 side is equal to each other. Here, if the deviation between the first distance D1 and the second distance D2 is, for example, within 5% of the first distance D1, then the first distance D1 and the second distance D2 can be said to be equal to each other.Furthermore, if the deviation between the third distance D3 and the fourth distance D4 is, for example, within 5% of the third distance D3, then the third distance D3 and the fourth distance D4 can be said to be equal to each other.

[0258] A main surface side drive electrode 41 is formed on the front surface 40a of semiconductor element 40, and a back surface side drive electrode (not shown) is formed on the back surface facing the opposite side to front surface 40a in thickness direction Z. Main surface side drive electrode 41 constitutes an anode electrode, and the back surface side drive electrode constitutes a cathode electrode.

[0259] A passivation film 44 serving as an insulating film is formed on the main surface side drive electrodes 41 of the semiconductor element 40. An opening 45 is formed in the passivation film 44. The main surface side drive electrodes 41 are exposed through the opening 45.

[0260] The shape of opening 45 in a plan view is rectangular with its longer side oriented in the horizontal direction Y and its shorter side oriented in the vertical direction X. The size of opening 45 in the horizontal direction Y is smaller than the size of first drive pad 21C and the size of second drive pad 21D in the horizontal direction Y. In other words, the size of first drive pad 21C and the size of second drive pad 21D in the horizontal direction Y are larger than the size of opening 45 in the horizontal direction Y.

[0261] The opening 45 is provided in the center of the front surface 40a of the semiconductor element 40 in the vertical direction X. Specifically, a first distance DC1 between the opening 45 and the first side surface 40c of the semiconductor element 40, a second distance DC2 between the opening 45 and the second side surface 40d of the semiconductor element 40, a third distance DC3 between the opening 45 and the third side surface 40e of the semiconductor element 40, and a fourth distance DC4 between the opening 45 and the fourth side surface 40f of the semiconductor element 40 are all equal to one another. Here, if the maximum deviations among the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are within 5% of the first distance DC1, for example, then it can be said that the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are all equal to one another.

[0262] The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45. The exposed region 46 has a first exposed end 46a and a second exposed end 46b, which are opposite ends in the lateral direction Y. The first exposed end 46a is the end of the exposed region 46 on the third side surface 40e side of the semiconductor element 40. The second exposed end 46b is the end of the exposed region 46 on the fourth side surface 40f side of the semiconductor element 40.

[0263] The semiconductor device 1 includes a plurality of drive wires 60. In this embodiment, the plurality of drive wires 60 is composed of two drive wires: a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 form the most distant combination of the plurality of drive wires 60. The first drive wire 61 is disposed closer to the control wire 70 than the second drive wire 62. The first drive wire 61 and the second drive wire 62 connect the main surface side drive electrode 41 of the semiconductor element 40 and the drive pad 21 while being spaced apart from each other. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged spaced apart in the horizontal direction Y. The first drive wire 61 and the second drive wire 62 are drive wires at both ends of the plurality of drive wires 60 in the horizontal direction Y.

[0264] The first drive wire 61 and the second drive wire 62 are made of the same metal. In this embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 is, for example, within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62.

[0265] The first drive wire 61 connects the main surface drive electrode 41 of the semiconductor element 40 to the first drive pad 21C. The second drive wire 62 connects the main surface drive electrode 41 to the second drive pad 21D. The first drive wire 61 and the second drive wire 62 are each connected to the main surface drive electrode 41 and each drive pad 21C, 21D by, for example, wire bonding.

[0266] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 increases as the wire moves from the main surface side drive electrode 41 toward the drive pad 21 side. The configuration of the first drive wire 61 and the second drive wire 62 will be described in detail below.

[0267] The drive electrode side end 61a of the first drive wire 61 is disposed closer to the fourth sealing resin side surface 54 than the drive pad side end 61b of the first drive wire 61. The drive electrode side end 62a of the second drive wire 62 is disposed closer to the third sealing resin side surface 53 than the drive pad side end 62b of the second drive wire 62. In a plan view, the distance DW2 between the drive pad side end 61b and the drive pad side end 62b is greater than the distance DW1 between the drive electrode side end 61a and the drive electrode side end 62a.

[0268] The distance DY1 is the distance in the horizontal direction Y between auxiliary line LS1 extending from drive electrode side end 61a in the vertical direction X and auxiliary line LS2 extending from drive pad side end 61b in the vertical direction X, and the distance DY2 is the distance in the horizontal direction Y between auxiliary line LS3 extending from drive electrode side end 62a in the vertical direction X and auxiliary line LS4 extending from drive pad side end 62b in the vertical direction X. Here, if the deviation between distance DY1 and distance DY2 is within 5% of distance DY1, for example, it can be said that distance DY1 and distance DY2 are equal to each other.

[0269] The drive electrode side end 61a of the first drive wire 61 is connected to the first exposed end 46a side of the center in the lateral direction Y of the exposed region 46 of the main surface side drive electrode 41. In this embodiment, the drive electrode side end 61a is connected to the first exposed end 46a. In one example, the drive electrode side end 61a is arranged so as to be the limit position on the third side face 40e side of the region where wire bonding can be performed as the first exposed end 46a of the exposed region 46 of the main surface side drive electrode 41.

[0270] The drive pad side end 61b of the first drive wire 61 is connected to the first end 21c side of the first drive pad 21C relative to the center in the horizontal direction Y. In this embodiment, the drive pad side end 61b is connected to the first end 21c of the first drive pad 21C. In one example, the drive pad side end 61b is arranged so as to be at the limit position on the third sealing resin side surface 53 side of the area where wire bonding can be performed as the first end 21c of the first drive pad 21C. The drive pad side end 61b is connected to a portion of the first drive pad 21C closer to the semiconductor element 40 than the center in the vertical direction X.

[0271] The drive electrode side end 62a of the second drive wire 62 is connected to the second exposed end 46b side of the central portion of the exposed region 46 of the main surface side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode side end 62a is connected to the second exposed end 46b. In one example, the drive electrode side end 62a is arranged in the horizontal direction Y at the limit position on the fourth side face 40f side of the region where wire bonding can be performed as the end of the opening 45 on the fourth side face 40f side of the semiconductor element 40. In the vertical direction X, the drive electrode side end 62a is arranged in the horizontal direction Y while being aligned with the drive electrode side end 61a of the first drive wire 61. Here, the state in which the drive electrode side end 62a and the drive electrode side end 61a are aligned in the vertical direction X includes both the drive electrode side end 61a, 62a overlapping each other in the vertical direction X and partial overlap due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment in the vertical direction X of the drive electrode side ends 61a, 62a is approximately the same as the variation in wire bonding, then the drive electrode side ends 61a, 62a can be said to be aligned in the vertical direction X.

[0272] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21f side of the second drive pad 21D relative to the center in the horizontal direction Y. In this embodiment, the drive pad side end 62b is connected to the second end 21f of the second drive pad 21D. In one example, the drive pad side end 62b is arranged so as to be at the limit position on the fourth sealing resin side surface 54 side of the area where wire bonding can be performed as the second end 21f of the second drive pad 21D. The drive pad side end 62b is connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center in the vertical direction X.

[0273] According to the semiconductor device 1 of this embodiment, in addition to the effects (1-1), (1-5), and (1-7) of the first embodiment, the following effects can be obtained. (4-1) The first drive pad 21C of the first drive lead 20C and the second drive pad 21D of the second drive lead 20D are arranged apart from each other in the horizontal direction Y. This configuration allows a large distance DW2 to be secured between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62. This reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0274] (4-2) The drive pad end 61b is connected to the first end 21e of the first drive pad 21C, and the drive pad end 62b is connected to the second end 21f of the second drive pad 21D. This configuration allows the distance DW2 between the drive pad end 61b and the drive pad end 62b to be increased. This further reduces the inductance from the main surface drive electrode 41 to the drive pad 21.

[0275] (Modification of the fourth embodiment) The semiconductor device 1 of the fourth embodiment can be modified, for example, as follows. The following modifications can be combined as long as no technical contradiction occurs. In the following modifications, parts common to the third embodiment are assigned the same reference numerals as in the fourth embodiment, and their description will be omitted.

[0276] The number of drive wires 60 is not limited to two and can be changed arbitrarily. In one example, as shown in FIG. 33 , the multiple drive wires 60 may be composed of four drive wires: a first drive wire 61, a second drive wire 62, a third drive wire 63, and a fourth drive wire 64. The third drive wire 63 and the fourth drive wire 64 are disposed between the first drive wire 61 and the second drive wire 62. In this case, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the multiple drive wires 60. The first drive wire 61, the second drive wire 62, the third drive wire 63, and the fourth drive wire 64 are arranged at a distance from each other in the lateral direction Y. In this way, the first drive wire 61 and the second drive wire 62, which constitute the most distant combination of the multiple drive wires 60, are the drive wires at both ends of the multiple drive wires 60 in the lateral direction Y.

[0277] The third drive wire 63 has a drive electrode side end 63a and a drive pad side end 63b. The drive electrode side end 63a is the end of the third drive wire 63 that is connected to the main surface side drive electrode 41. The drive pad side end 63b is the end of the third drive wire 63 that is connected to the first drive pad 21C. The drive pad side end 63b is arranged closer to the third sealing resin side surface 53 than the drive electrode side end 63a. The fourth drive wire 64 has a drive electrode side end 64a and a drive pad side end 64b. The drive electrode side end 64a is the end of the fourth drive wire 64 that is connected to the main surface side drive electrode 41. The drive pad side end 64b is the end of the fourth drive wire 64 that is connected to the second drive pad 21D. The drive pad side end 64b is arranged closer to the fourth sealing resin side surface 54 than the drive electrode side end 64a. 33, drive pad side end 63b is connected to second end 21d of first drive pad 21C, and drive pad side end 64b is connected to first end 21e of second drive pad 21D.

[0278] 33 , the drive electrode end 61 a of the first drive wire 61, the drive electrode end 62 a of the second drive wire 62, the drive electrode end 63 a of the third drive wire 63, and the drive electrode end 64 a of the fourth drive wire 64 are aligned in the vertical direction X and arranged in the horizontal direction Y. Here, the state in which the drive electrode end 61 a, the drive electrode end 62 a, the drive electrode end 63 a, and the drive electrode end 64 a are aligned in the vertical direction X includes the drive electrode end 61 a, 62 a, 63 a, and 64 a overlapping with each other in the vertical direction X, and partial overlap due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment of the drive electrode end 61 a, 62 a, 63 a, and 64 a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that the drive electrode end 61 a, 62 a, 63 a, and 64 a are aligned in the vertical direction X.

[0279] In a plan view, the first drive wire 61 and the third drive wire 63 are connected to the main surface side drive electrode 41 and the first drive pad 21C so that they are spaced farther apart on the first drive pad 21C side than on the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the third drive wire 63 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. In a plan view, the fourth drive wire 64 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the second drive pad 21D so that they are spaced farther apart on the second drive pad 21D side than on the main surface side drive electrode 41 side. In a plan view, the distance between the fourth drive wire 64 and the second drive wire 62 gradually increases from the main surface side drive electrode 41 toward the drive pad 21. The third drive wire 63 and the fourth drive wire 64 are connected to the main surface side drive electrode 41 and the first drive pad 21C and the second drive pad 21D so that they are farther apart on the side of the first drive pad 21C and the second drive pad 21D than on the side of the main surface side drive electrode 41. In a plan view, the distance between the third drive wire 63 and the fourth drive wire 64 gradually increases from the main surface side drive electrode 41 toward the first drive pad 21C and the second drive pad 21D.

[0280] The size of the semiconductor element 40 can be changed arbitrarily. The size of the semiconductor element 40 may be larger in at least one of the vertical direction X and the horizontal direction Y than the size of the semiconductor element 40 of the fourth embodiment.

[0281] The position of the semiconductor element 40 relative to the substrate 10 can be changed arbitrarily. In the first example, the semiconductor element 40 may be disposed in a portion of the inner main body 12 closer to the second sealing resin side surface 52. In detail, a first distance D1 in the vertical direction X between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body 12 on the second sealing resin side surface 52 side is smaller than a second distance D2 in the vertical direction X between the semiconductor element 40 and the narrow portion 14 of the inner main body 12.

[0282] This configuration reduces the distance between the opening 45 of the semiconductor element 40 and the drive pad 21, thereby shortening the first drive wire 61 and the second drive wire 62. This reduces the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20.

[0283] In the second example, the semiconductor element 40 may be disposed in a portion of the inner main body 12 closer to the second sealing resin side surface 52 and closer to the fourth sealing resin side surface 54. In particular, a first distance D1 in the vertical direction X between the semiconductor element 40 and the edge of the first flange portion 19a of the inner main body 12 facing the second sealing resin side surface 52 is smaller than a second distance D2 in the vertical direction X between the semiconductor element 40 and the narrow width portion 14 of the inner main body 12. Furthermore, a third distance D3 in the horizontal direction Y between the semiconductor element 40 and the edge of the second flange portion 19b of the inner main body 12 facing the third sealing resin side surface 53 is larger than a fourth distance D4 in the horizontal direction Y between the semiconductor element 40 and the edge of the third flange portion 19c of the inner main body 12 facing the fourth sealing resin side surface 54.

[0284] With this configuration, the distance between the semiconductor element 40 and the drive pad 21 is further reduced, thereby further shortening the first drive wire 61 and the second drive wire 62. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0285] (Modifications common to all embodiments) The semiconductor device 1 of each of the above embodiments can be modified as follows, for example. In each of the above embodiments, the positions of the drive pad 21 and the control pad 31 in the thickness direction Z can be changed as desired. In one example, at least one of the drive pad 21 and the control pad 31 may be aligned with the semiconductor element 40 in the thickness direction Z. In another example, at least one of the drive pad 21 and the control pad 31 may be aligned with the substrate 10 in the thickness direction Z.

[0286] In each of the above embodiments, the positions of the drive pad 21 and the control pad 31 in a plan view can be changed as desired. For example, at least one of the drive pad 21 and the control pad 31 may be shifted in the lateral direction Y relative to the substrate 10. That is, at least one of the drive pad 21 and the control pad 31 may be positioned closer to the third sealing resin side surface 53 or the fourth sealing resin side surface 54 of the sealing resin 50 than the substrate 10. As a result, at least one of the drive pad 21 and the control pad 31 is shifted in the lateral direction Y relative to the semiconductor element 40.

[0287] In each of the above embodiments, the flange portions 19 may be omitted from the substrate 10. In each of the above embodiments, the drive wires 60 and the control wires 70 may be made of different metals. In one example, the drive wires 60 are made of aluminum, and the control wires 70 are made of gold (Au).

[0288] In each of the above embodiments, the wire diameter of the plurality of drive wires 60 may be different from the wire diameter of the control wire 70. In one example, the wire diameter of the plurality of drive wires 60 is larger than the wire diameter of the control wire 70.

[0289] In each of the above embodiments, the wire diameter of the plurality of drive wires 60 is not limited to 125 μm to 250 μm and can be changed as desired. In one example, the wire diameter of the plurality of drive wires 60 is 250 μm to 400 μm.

[0290] In each of the above embodiments, the semiconductor element 40 is configured to expose the principal surface side drive electrode 41 and the control electrode 43 through one rectangular opening 45 in plan view. However, the number of openings 45 is not limited to this. For example, as shown in FIG. 34 , a first opening 45A exposing the principal surface side drive electrode 41 and a second opening 45B exposing the control electrode 43 may be formed on the surface 40a of the semiconductor element 40. The first opening 45A in plan view has a rectangular shape with its long side aligned in the horizontal direction Y and its short side aligned in the vertical direction X. The second opening 45B in plan view has a rectangular shape with its long side aligned in the vertical direction X and its short side aligned in the horizontal direction Y. The first opening 45A is located closer to the first side surface 40c of the semiconductor element 40 in the vertical direction X. The first opening 45A exposes most of the surface 40a of the semiconductor element 40 in the horizontal direction Y. The second opening 45B is provided at the end of the semiconductor element 40 on the second side surface 40d side and on the third side surface 40e side.

[0291] The main surface side drive electrode 41 has an exposed region 46 exposed by the first opening 45A. The exposed region 46 has a first exposed end 46a and a second exposed end 46b, which are opposite ends in the lateral direction Y. The first exposed end 46a is the end of the exposed region 46 on the third side surface 40e side of the semiconductor element 40. The second exposed end 46b is the end of the exposed region 46 on the fourth side surface 40f side of the semiconductor element 40.

[0292] The first drive wire 61 and the second drive wire 62 are connected to the exposed region 46 of the main surface side drive electrode 41 and the drive pad 21 of the drive lead 20. In Fig. 34, the first drive wire 61 and the second drive wire 62 are parallel to each other in a plan view. Note that, in a plan view, the distance between the first drive wire 61 and the second drive wire 62 may gradually increase from the main surface side drive electrode 41 toward the drive pad 21, or may gradually decrease from the main surface side drive electrode 41 toward the drive pad 21.

[0293] In a plan view, the distance DW2 between the drive pad side end 61b and the drive pad side end 62b is equal to the distance DW1 between the drive electrode side end 61a and the drive electrode side end 62a. Here, if the deviation between the distance DW1 and the distance DW2 is, for example, within 5% of the distance DW2, it can be said that the distance DW2 and the distance DW1 are equal to each other.

[0294] The drive electrode side end 61a of the first drive wire 61 is disposed closer to the first exposed end 46a than the center of the exposed region 46 in the lateral direction Y. In Fig. 34, the drive electrode side end 61a is connected to the first exposed end 46a of the exposed region 46. In one example, the drive electrode side end 61a is disposed so as to be at the limit position on the third side face 40e side of the region where wire bonding can be performed as the first exposed end 46a of the exposed region 46.

[0295] The drive pad side end 61b of the first drive wire 61 is connected closer to the first end 21a than the center of the drive pad 21 in the horizontal direction Y. In FIG. 34 , the drive pad side end 61b is connected to the first end 21a of the drive pad 21. In one example, the drive pad side end 61b is arranged so as to be at the limit position on the third sealing resin side surface 53 side of the area where wire bonding can be performed as the first end 21a of the drive pad 21. The drive pad side end 61b is connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The drive pad side end 61b is arranged so as to be closer to the fourth sealing resin side surface 54 than the drive electrode side end 61a.

[0296] The drive electrode side end 62a of the second drive wire 62 is disposed closer to the second exposed end 46b than the center of the exposed region 46 in the horizontal direction Y. In FIG. 34 , the drive electrode side end 62a is connected to the second exposed end 46b of the exposed region 46. In one example, the drive electrode side end 62a is disposed so as to be at the limit position on the fourth side surface 40f side of the region where wire bonding can be performed as the second exposed end 46b of the exposed region 46. In the vertical direction X, the drive electrode side end 62a is aligned with the drive electrode side end 61a of the first drive wire 61 in the horizontal direction Y. Here, the state in which the drive electrode side end 62a and the drive electrode side end 61a are aligned in the vertical direction X includes both the drive electrode side end 61a, 62a overlapping with each other in the vertical direction X and partial overlap due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment in the vertical direction X of the drive electrode side ends 61a, 62a is approximately the same as the variation in wire bonding, then the drive electrode side ends 61a, 62a can be said to be aligned in the vertical direction X.

[0297] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b side of the center of the drive pad 21 in the horizontal direction Y. In FIG. 34, the drive pad side end 62b is connected to the second end 21b of the drive pad 21. In one example, the drive pad side end 62b is arranged so as to be at the limit position on the fourth sealing resin side surface 54 side of the area where wire bonding can be performed as the second end 21b of the drive pad 21. The drive pad side end 62b is connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The drive pad side end 62b is arranged so as to be closer to the fourth sealing resin side surface 54 than the drive electrode side end 62a. In addition, in FIG. 34, the drive pad side end 62b is arranged in the horizontal direction Y while being aligned with the drive pad side end 61b in the vertical direction X. Here, the state in which the drive pad side end 62b and the drive pad side end 61b are aligned in the vertical direction X includes both the drive pad side end 61b, 62b overlapping with each other in the vertical direction X, and partial overlap due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment in the vertical direction X between the drive pad side end 61b, 62b is approximately the same as the variation in wire bonding, it can be said that the drive pad side end 61b, 62b are aligned in the vertical direction X.

[0298] With this configuration, the distance DW1 between the drive electrode side end 61a of the first drive wire 61 and the drive electrode side end 62a of the second drive wire 62 can be made large, thereby reducing the inductance between the main surface side drive electrode 41 and the drive pad 21.

[0299] 34, the positional relationship between the first opening 45A and the second opening 45B in the vertical direction X may be reversed. That is, the first opening 45A may be formed closer to the second side surface 40d of the semiconductor element 40 than the second opening 45B. With this configuration, the distance between the first opening 45A and the drive pad 21 is reduced, thereby allowing the first drive wire 61 and the second drive wire 62 to be shortened. Therefore, the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20 can be further reduced.

[0300] (Addendum) Next, the technical concepts based on the above-described embodiments and modifications will be described below. (Supplementary Note 1) A semiconductor device comprising: a substrate having a main surface; a surface mounted on the main surface and facing the same direction as the main surface; and a drive electrode formed on the surface, the semiconductor element including SiC; a drive pad; and a plurality of drive wires connecting the drive electrode and the drive pad while being spaced apart from each other, wherein a first drive wire and a second drive wire constituting the most spaced-apart combination of the plurality of drive wires are connected to the drive electrode and the drive pad so that the drive pad side is closer than the drive electrode side when viewed from a first direction that is perpendicular to the main surface.

[0301] (Appendix 2) The semiconductor device described in Appendix 1, wherein a direction perpendicular to the first direction is defined as a second direction, and a direction perpendicular to the first direction and the second direction is defined as a third direction, the semiconductor element and the drive pad are offset at least in the second direction, the multiple drive wires are arranged at a distance in the third direction, and the first drive wire and the second drive wire are drive wires at both ends of the multiple drive wires in the third direction.

[0302] (Appendix 3) The semiconductor device according to appendix 1 or 2, wherein the semiconductor device has an insulating film formed on the drive electrode and an opening formed in a portion of the insulating film so as to expose the drive electrode, the opening being formed in a rectangular shape with a short side direction in the second direction and a long side direction in the third direction when viewed from the first direction, and the size of the opening in the third direction is larger than the size of the drive pad in the third direction.

[0303] (Supplementary Note 4) The semiconductor device according to any one of Supplementary Notes 1 to 4, wherein the semiconductor device includes an insulating film formed on the drive electrode and an opening formed in a portion of the insulating film to expose the drive electrode, the opening being formed in a rectangular shape with a short side direction in the second direction and a long side direction in the third direction when viewed from the first direction, the drive electrode having an exposed region exposed by the opening, the exposed region having a first exposed end and a second exposed end which are both ends in the third direction, the first drive wire being connected to a side of the first exposed end rather than a center part of the exposed region in the third direction, and the second drive wire being connected to a side of the second exposed end rather than a center part of the exposed region in the third direction.

[0304] (Supplementary Note 5) The semiconductor device described in any one of Supplementary Notes 2 to 4, wherein the first drive wire and the second drive wire each have a drive electrode side end connected to the drive electrode and a drive pad side end connected to the drive pad, the drive pad has a first end and a second end which are opposite ends in the third direction, the drive pad side end of the first drive wire is connected to the first end side of the center of the drive pad in the third direction, and the drive pad side end of the second drive wire is connected to the second end side of the drive pad in the third direction.

[0305] (Appendix 6) The semiconductor device described in Appendix 5, wherein the drive pad side end of the first drive wire is connected to the first end, and the drive pad side end of the second drive wire is connected to the second end.

[0306] (Supplementary Note 7) A semiconductor device including a substrate having a main surface, a surface mounted on the main surface and facing the same direction as the main surface, and a drive electrode formed on the surface, the semiconductor device including SiC, a drive pad, and a plurality of drive wires connecting the drive electrode and the drive pad in a state of being spaced apart from each other, the plurality of drive wires including a first drive wire and a second drive wire constituting the most spaced-apart combination of the plurality of drive wires, the first drive wire and the second drive wire each having a drive electrode side end connected to the drive electrode and a drive pad side end connected to the drive pad, a direction perpendicular to the main surface being a first direction, a semiconductor device in which a direction perpendicular to the first direction is defined as a second direction, and a direction perpendicular to the first direction and the second direction is defined as a third direction, wherein the semiconductor element and the drive pad are offset at least in the second direction, the first drive wire and the second drive wire are arranged at a distance in the third direction, the drive pad has a first end and a second end which are opposite ends in the third direction, the drive pad side end of the first drive wire is connected to the first end side of the drive pad relative to a center of the drive pad in the third direction, and the drive pad side end of the second drive wire is connected to the second end side of the drive pad relative to a center of the drive pad in the third direction.

[0307] (Appendix 8) The semiconductor device described in Appendix 7, wherein the drive pad side end of the first drive wire is connected to the first end, and the drive pad side end of the second drive wire is connected to the second end.

[0308] (Appendix 9) The semiconductor device according to appendix 7 or 8, wherein the semiconductor device has an insulating film formed on the drive electrode and an opening formed in a portion of the insulating film so as to expose the drive electrode, the opening being formed in a rectangular shape with a short side direction in the second direction and a long side direction in the third direction when viewed from the first direction, and the size of the drive pad in the third direction is larger than the size of the opening in the third direction.

[0309] (Supplementary Note 10) The semiconductor device according to Supplementary Note 9, wherein the size of the drive pad in the third direction is larger than the size of the semiconductor element in the third direction. (Supplementary Note 11) The semiconductor device according to Supplementary Note 7 or 8, wherein the size of the drive pad in the third direction is greater than half the size of the substrate in the third direction.

[0310] (Appendix 12) The semiconductor device described in Appendix 7 or 8, wherein the drive pad includes a first drive pad and a second drive pad, a drive pad side end of the first drive wire is connected to the first drive pad, and a drive pad side end of the second drive wire is connected to the second drive pad, and the first drive pad and the second drive pad are arranged at a distance from each other in the third direction.

[0311] (Fifth embodiment) A fifth embodiment of the semiconductor device will be described with reference to FIGS. As shown in FIG. 35, the semiconductor device 1 includes a substrate 10, drive leads 20, control leads 30, a semiconductor element 40 mounted on the main surface 10a of the substrate 10, and a sealing resin 50 that seals the semiconductor element 40. In this embodiment, the substrate 10, drive leads 20, and control leads 30 are formed by pressing the same metal base material. The drive lead 20 includes an outer lead 20A protruding from a first side surface of the sealing resin 50 and an inner lead 20B disposed within the sealing resin 50 and electrically connected to the outer lead 20A. In this embodiment, the outer lead 20A and the inner lead 20B are integrated into a single component. The control lead 30 includes an outer lead 30A protruding from a first side surface of the sealing resin 50 and an inner lead 30B disposed within the sealing resin 50 and electrically connected to the outer lead 30A. In this embodiment, the outer lead 30A and the inner lead 30B are integrated into a single component. The horizontal dimension LY of the semiconductor device 1 is preferably 10 mm or less. The semiconductor device 1 of this embodiment is a package conforming to the package outline standard (JEITA standard) TO (Transistor Outline)-252. Specifically, the semiconductor device 1 has a vertical dimension LX of 9.5 mm to 10.50 mm, a horizontal dimension LY of 6.4 mm to 6.8 mm, and a thickness dimension LZ of 2.1 mm to 2.3 mm. The horizontal dimension LY and the thickness dimension LZ correspond to the horizontal dimension LRY and the thickness dimension LRZ of the sealing resin 50. The vertical dimension LRX of the sealing resin 50 is 6.0 mm to 6.4 mm. The semiconductor device 1 is a so-called SIP (Single Inline Package) type in which the outer leads 20A of the drive leads 20 and the outer leads 30A of the control leads 30 each extend from one surface of the sealing resin 50.

[0312] As shown in FIG. 35 , the sealing resin 50 has a substantially rectangular parallelepiped shape. The sealing resin 50 is an electrically insulating synthetic resin. In one example, the sealing resin 50 is an epoxy resin. The sealing resin 50 has six surfaces: a first sealing resin side surface 51, a second sealing resin side surface 52, a third sealing resin side surface 53, a fourth sealing resin side surface 54, a sealing resin rear surface 55, and a sealing resin top surface 56. A drive terminal 22 of the drive lead 20 (described later) and a control terminal 32 of the control lead 30 (described later) each protrude from the second sealing resin side surface 52. In this embodiment, the second sealing resin side surface 52 is an example of a first side surface of the sealing resin. The first sealing resin side surface 51 and the second sealing resin side surface 52 face opposite each other with a gap therebetween. In this embodiment, the first sealing resin side surface 51 is an example of a second side surface of the sealing resin. The third sealing resin side surface 53 and the fourth sealing resin side surface 54 face opposite each other with a gap therebetween. The sealing resin back surface 55 and the sealing resin top surface 56 face opposite to each other with a gap therebetween. The sealing resin top surface 56 faces the same direction as the main surface 10a of the substrate 10. The sealing resin back surface 55 faces the same direction as the back surface 10b of the substrate 10 (see FIG. 37). In the following description, the direction in which the sealing resin back surface 55 and the sealing resin top surface 56 are arranged is referred to as the thickness direction Z, the direction in which the first sealing resin side surface 51 and the second sealing resin side surface 52 are arranged is referred to as the vertical direction X, and the direction in which the third sealing resin side surface 53 and the fourth sealing resin side surface 54 are arranged is referred to as the horizontal direction Y. The vertical direction X and the horizontal direction Y are directions perpendicular to the thickness direction Z. The vertical direction X is a direction perpendicular to the horizontal direction Y. Here, the thickness direction Z corresponds to the first direction, the vertical direction X corresponds to the second direction, and the horizontal direction Y corresponds to the third direction.

[0313] The sealing resin 50 is formed by molding. Each side surface 51 to 54 of the sealing resin 50 has an inclined surface inclined with respect to the thickness direction Z to provide a draft angle that facilitates removal of a mold when molding the sealing resin 50. Specifically, each side surface 51 to 54 has a first inclined surface provided with a draft angle that facilitates removal of an upper die of the mold and a second inclined surface provided with a draft angle that facilitates removal of a lower die of the mold. The upper die of the mold forms the sealing resin top surface 56 and portions of each side surface 51 to 54 that face the sealing resin top surface 56. The lower die forms the sealing resin back surface 55 and portions of each side surface 51 to 54 that face the sealing resin back surface 55. In one example, as shown in FIGS. 38 and 39 , the first sealing resin side surface 51 has a first inclined surface 51 a and a second inclined surface 51 b. The first inclined surface 51 a slopes toward the sealing resin top surface 56 and toward the second sealing resin side surface 52. The second inclined surface 51b is inclined toward the second sealing resin side surface 52 as it approaches the sealing resin back surface 55. The length of the first inclined surface 51a is longer than the length of the second inclined surface 51b. The second sealing resin side surface 52 has a first inclined surface 52a and a second inclined surface 52b. The first inclined surface 52a is inclined toward the first sealing resin side surface 51 as it approaches the sealing resin top surface 56. The second inclined surface 52b is inclined toward the first sealing resin side surface 51 as it approaches the sealing resin back surface 55. The length of the first inclined surface 52a is longer than the length of the second inclined surface 52b. The second inclined surface 52b is formed over the substrate 10 toward the sealing resin top surface 56. The third sealing resin side surface 53 has a first inclined surface 53a and a second inclined surface 53b. The first inclined surface 53a is inclined toward the fourth sealing resin side surface 54 as it approaches the sealing resin top surface 56. The second inclined surface 53b is inclined toward the fourth sealing resin side surface 54 as it approaches the sealing resin back surface 55. The length of the first inclined surface 53a is longer than the length of the second inclined surface 53b. The fourth sealing resin side surface 54 has a first inclined surface 54a and a second inclined surface 54b. The first inclined surface 54a is inclined toward the third sealing resin side surface 53 as it approaches the sealing resin top surface 56. The second inclined surface 54b is inclined toward the third sealing resin side surface 53 as it approaches the sealing resin back surface 55.

[0314] The length of the first inclined surface 51a and the length of the second inclined surface 51b can be changed arbitrarily. The length of the first inclined surface 52a and the length of the second inclined surface 52b can be changed arbitrarily. The length of the first inclined surface 53a and the length of the second inclined surface 53b can be changed arbitrarily. The length of the first inclined surface 54a and the length of the second inclined surface 54b can be changed arbitrarily.

[0315] Fig. 36 is a view of the semiconductor device 1 viewed from the sealing resin top surface 56 in the thickness direction Z. For convenience, in Fig. 36, the sealing resin 50 is indicated by a two-dot chain line, and the components inside the sealing resin 50 are indicated by a solid line.

[0316] 36 , when the semiconductor device 1 is viewed from a sealing resin top surface 56 in the thickness direction Z (hereinafter referred to as a “plan view”), the shape of the sealing resin 50 is a substantially rectangular shape with the long side direction being the vertical direction X and the short side direction being the horizontal direction Y. The first sealing resin side surface 51 and the second sealing resin side surface 52 are side surfaces that extend along the horizontal direction Y, and the third sealing resin side surface 53 and the fourth sealing resin side surface 54 are side surfaces that extend along the vertical direction X.

[0317] The substrate 10 has a main surface 10a and a back surface 10b (see FIG. 37) facing opposite to each other in the thickness direction Z. The main surface 10a faces the same direction as the sealing resin top surface 56, and the back surface 10b faces the same direction as the sealing resin back surface 55 (see FIG. 37). The substrate 10 is formed of, for example, aluminum (Al) or copper (Cu).

[0318] The substrate 10 can be divided into an inner main body portion 111 covered with the sealing resin 50 and a protruding portion 112 protruding from the sealing resin 50. The inner main body portion 111 and the protruding portion 112 are adjacent to each other in the vertical direction X. The protruding portion 112 protrudes in the vertical direction X from the first sealing resin side surface 51. In this embodiment, the size of the protruding portion 112 in the horizontal direction Y is smaller than the size of the inner main body portion 111 in the horizontal direction Y. Note that the size of the protruding portion 112 in the horizontal direction Y can be changed as desired. In one example, the size of the protruding portion 112 in the horizontal direction Y may be equal to the size of the inner main body portion 111 in the horizontal direction Y.

[0319] In a plan view, the inner main body portion 111 is disposed such that its center in the vertical direction X is closer to the first sealing resin side surface 51 than the center of the sealing resin 50 in the vertical direction X. The inner main body portion 111 has a main surface 111a, a back surface 111b (see FIG. 37), a first side surface 111c, a second side surface 111d, and a third side surface 111e. The main surface 111a and the back surface 111b face opposite each other in the thickness direction Z. The main surface 111a constitutes the main surface 10a of the substrate 10, and the back surface 111b constitutes the back surface 10b of the substrate 10. Therefore, the main surface 111a faces the sealing resin top surface 56, and the back surface 111b faces the sealing resin back surface 55. The first side surface 111c faces the second sealing resin side surface 52, the second side surface 111d faces the third sealing resin side surface 53, and the third side surface 111e faces the fourth sealing resin side surface 54. The first side surface 111c extends along the horizontal direction Y. The second side surface 111d and the third side surface 111e face each other with a gap in between in the horizontal direction Y. The second side surface 111d and the third side surface 111e extend along the vertical direction X.

[0320] A narrow width portion 113 is formed at the end of the inner main body portion 111 on the protruding portion 112 side. The narrow width portion 113 is formed by a curved recess 113a recessed from the second side surface 111d toward the fourth sealing resin side surface 54 in the horizontal direction Y, and a curved recess 113b recessed from the third side surface 111e toward the third sealing resin side surface 53 in the horizontal direction Y. The size of the narrow width portion 113 in the horizontal direction Y is smaller than the size of the portion of the inner main body portion 111 other than the narrow width portion 113 in the horizontal direction Y. The size of the narrow width portion 113 in the horizontal direction Y is also smaller than the size of the protruding portion 112 in the horizontal direction Y. The narrow width portion 113 is provided adjacent to the first sealing resin side surface 51 of the sealing resin 50 in the vertical direction X. A through hole 114 is provided in the narrow width portion 113, penetrating the narrow width portion 113 in the thickness direction Z. The shape of the through-hole 114 in plan view is a substantially ellipse with the lateral direction Y as the longitudinal direction.

[0321] As shown in FIG. 37 , a portion of the back surface 111b of the inner main body portion 111 is exposed from the sealing resin back surface 55. An exposed surface 111x, which is the surface of the back surface 111b of the inner main body portion 111 exposed from the sealing resin back surface 55, is a portion of the back surface 111b of the inner main body portion 111 that is on the first sealing resin side surface 51 side. An edge 111xe of the exposed surface 111x that is on the second sealing resin side surface 52 side is formed so as to be closer to the first sealing resin side surface 51 than the center of the sealing resin 50 in the vertical direction X. In this embodiment, the edge 111xe of the exposed surface 111x extends along the horizontal direction Y. The exposed surface 111x is flush with the sealing resin back surface 55. A portion of the back surface 111b of the inner main body portion 111 other than the exposed surface 111x constitutes a non-exposed surface 111y that is not exposed from the sealing resin back surface 55.

[0322] 36, in a plan view, the drive lead 20 and the control lead 30 are arranged closer to the second sealing resin side surface 52 of the sealing resin 50 than the substrate 10, while being spaced apart in the vertical direction X with respect to the substrate 10. The drive lead 20 and the control lead 30 are arranged while being spaced apart from each other in the horizontal direction Y.

[0323] The drive lead 20 has a drive pad 21, a drive terminal 22, and a connecting portion 23 that connects the drive pad 21 and the drive terminal 22. The drive pad 21 and the connecting portion 23 form an inner lead 20B, and the drive terminal 22 forms an outer lead 20A. The drive pad 21 and the connecting portion 23 are arranged between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. More specifically, the drive pad 21 and the connecting portion 23 are arranged in the vertical direction X so that they are closer to the second sealing resin side surface 52 than the center of the sealing resin 50 in the vertical direction X. The drive pad 21 is arranged so that its center in the horizontal direction Y is closer to the fourth sealing resin side surface 54 than the center of the sealing resin 50 in the horizontal direction Y. The connecting portion 23 is arranged in the horizontal direction Y so that they are closer to the fourth sealing resin side surface 54 than the center of the sealing resin 50 in the horizontal direction Y.

[0324] The shape of the drive pad 21 in a plan view is a substantially rectangular shape with the longer side oriented in the horizontal direction Y and the shorter side oriented in the vertical direction X. The size of the drive pad 21 in the horizontal direction Y is larger than the size of the semiconductor element 40 in the horizontal direction Y. In this embodiment, the size of the drive pad 21 in the horizontal direction Y is larger than half the size of the inner main body portion 111 in the horizontal direction Y.

[0325] The drive pad 21 has a first end 21a and a second end 21b as ends in the lateral direction Y. The first end 21a is the end of the drive pad 21 closer to the third sealing resin side surface 53. In this embodiment, the first end 21a is positioned closer to the third sealing resin side surface 53 than the center of the inner main body portion 111 in the lateral direction Y. The second end 21b is the end of the drive pad 21 closer to the fourth sealing resin side surface 54. The second end 21b is located closer to the fourth sealing resin side surface 54 than the third side surface 111e of the inner main body portion 111. As shown in FIG. 38 , the drive pad 21 is located closer to the sealing resin top surface 56 than the main surface 111a of the inner main body portion 111 in the thickness direction Z. The drive pad 21 is also located closer to the sealing resin top surface 56 than the surface 40a of the semiconductor element 40 in the thickness direction Z.

[0326] As shown in FIG. 36, the connecting portion 23 continues from the end of the drive pad 21 on the second sealing resin side surface 52 side. The connecting portion 23 is located closer to the fourth sealing resin side surface 54 than the center of the drive pad 21 in the lateral direction Y. The drive terminal 22 constitutes a source terminal. As shown in FIG. 38, the drive terminal 22 protrudes from the first inclined surface 52a of the second sealing resin side surface 52. That is, the drive terminal 22 has a terminal base end portion 22x which is the end of the drive terminal 22 on the second sealing resin side surface 52 side. The terminal base end portion 22x protrudes from the first inclined surface 52a. In the thickness direction Z, the terminal base end portion 22x is aligned with the drive pad 21 and the connecting portion 23.

[0327] 36, the control lead 30 has a control pad 31, a control terminal 32, and a connecting portion 33 that connects the control pad 31 and the control terminal 32. The control pad 31 and the connecting portion 33 form an inner lead 30B, and the control terminal 32 forms an outer lead 30A. The control pad 31 and the connecting portion 33 are arranged between the substrate 10 and the second sealing resin side surface 52 in the vertical direction X. The control pad 31 and the connecting portion 33 are arranged closer to the third sealing resin side surface 53 than the center of the sealing resin 50 in the horizontal direction Y.

[0328] The shape of the control pad 31 in a plan view is a substantially rectangular shape with the longer side extending in the horizontal direction Y and the shorter side extending in the vertical direction X. The size of the control pad 31 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. This allows the size of the drive pad 21 in the horizontal direction Y to be increased. As shown in FIG. 35 , the control pad 31 is located closer to the sealing resin top surface 56 than the main surface 111a of the inner main body portion 111 in the thickness direction Z. The control pad 31 is also located closer to the sealing resin top surface 56 than the surface 40a of the semiconductor element 40 in the thickness direction Z.

[0329] 36, the connecting portion 33 continues from the end of the control pad 31 on the side of the second sealing resin side surface 52. The connecting portion 33 is located closer to the third sealing resin side surface 53 of the control pad 31 in the lateral direction Y. The control terminal 32 constitutes a gate terminal. As shown in FIG. 35, the control terminal 32 protrudes from the first inclined surface 52a of the second sealing resin side surface 52.

[0330] As shown in FIGS. 38 and 39 , the semiconductor element 40 is mounted on the main surface 111a of the inner main body portion 111 with solder SD. As shown in FIG. 36 , the semiconductor element 40 is disposed in a portion of the inner main body portion 111 closer to the first sealing resin side surface 51. Specifically, in a plan view, a first distance D1 between the semiconductor element 40 and the first side surface 111c of the inner main body portion 111 is greater than a second distance D2 between the semiconductor element 40 and the narrow portion 113 of the inner main body portion 111. In one example, the semiconductor element 40 is disposed in a portion of the inner main body portion 111 adjacent to the narrow portion 113 in the vertical direction X. In the present embodiment, the semiconductor element 40 is disposed in a portion of the inner main body portion 111 adjacent to the narrow portion 113 in the vertical direction X.

[0331] The semiconductor element 40 is disposed in the center of the inner main body portion 111 in the lateral direction Y. Specifically, a third distance D3 between the semiconductor element 40 and the second side surface 111d of the inner main body portion 111 and a fourth distance D4 between the semiconductor element 40 and the third side surface 111e of the inner main body portion 111 are equal to each other. Here, if the deviation between the third distance D3 and the fourth distance D4 is, for example, within 5% of the third distance D3, it can be said that the third distance D3 and the fourth distance D4 are equal to each other. In this embodiment, the first distance D1 is greater than the third distance D3 and the fourth distance D4. The second distance D2 is smaller than the third distance D3 and the fourth distance D4.

[0332] The semiconductor element 40 includes silicon carbide (SiC). In this embodiment, a SiCMOSFET (metal-oxide-semiconductor field-effect transistor) is used as the semiconductor element 40. The semiconductor element 40 (SiCMOSFET) is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and several hundred kHz or less. Preferably, the semiconductor element 40 is an element capable of high-speed switching in response to a drive signal having a frequency of 1 kHz or more and 100 kHz or less. In this embodiment, the semiconductor element 40 performs high-speed switching in response to a drive signal having a frequency of 100 kHz.

[0333] The semiconductor element 40 is formed in a flat plate shape. Specifically, in a plan view, the shape of the semiconductor element 40 is a rectangle with the longer side direction being the horizontal direction Y and the shorter side direction being the vertical direction X. In this embodiment, the size of the semiconductor element 40 in the horizontal direction Y is 3 mm. Here, the size of the semiconductor element 40 in the horizontal direction Y includes an error of 5% of 3 mm (±0.15 mm).

[0334] As shown in Figures 36, 38, and 39, the semiconductor element 40 has a front surface 40a, a back surface 40b, a first side surface 40c, a second side surface 40d, a third side surface 40e, and a fourth side surface 40f. The front surface 40a and the back surface 40b face in opposite directions in the thickness direction Z. The front surface 40a faces the sealing resin top surface 56. That is, the front surface 40a faces the same direction as the main surface 10a of the substrate 10. The back surface 40b faces the sealing resin back surface 55. The back surface 40b faces the main surface 111a of the inner main body portion 111. The first side surface 40c faces the first sealing resin side surface 51, the second side surface 40d faces the second sealing resin side surface 52, the third side surface 40e faces the third sealing resin side surface 53, and the fourth side surface 40f faces the fourth sealing resin side surface 54.

[0335] A main surface side drive electrode 41 and a control electrode 43 are formed on the front surface 40a. A back surface side drive electrode 42 is formed on the back surface 40b. In this embodiment, the main surface side drive electrode 41 forms the source electrode, and the back surface side drive electrode 42 forms the drain electrode. The control electrode 43 forms the gate electrode. The back surface side drive electrode 42 is electrically connected to the inner main body portion 111 by solder SD.

[0336] The principal surface side drive electrode 41 is formed over most of the surface 40a. In a plan view, the shape of the principal surface side drive electrode 41 is a substantially rectangular shape with its short side aligned in the vertical direction X and its long side aligned in the horizontal direction Y. The principal surface side drive electrode 41 has a recess 41a formed therein that opens toward the third sealing resin side surface 53. The recess 41a is formed at the end of the principal surface side drive electrode 41 on the third sealing resin side surface 53 side and in the center in the vertical direction X. The control electrode 43 is formed within the recess 41a.

[0337] The semiconductor element 40 has a passivation film 44, which is an insulating film formed on the main surface side drive electrode 41 and the control electrode 43. The passivation film 44 has openings 45 that expose a part of the main surface side drive electrode 41 and a part of the control electrode 43.

[0338] The shape of the opening 45 in a plan view is rectangular, with the longer side oriented in the horizontal direction Y and the shorter side oriented in the vertical direction X. The size of the opening 45 in the horizontal direction Y is smaller than the size of the drive pad 21 in the horizontal direction Y. In other words, the size of the drive pad 21 in the horizontal direction Y is larger than the size of the opening 45 in the horizontal direction Y.

[0339] The opening 45 is provided in the center of the front surface 40a of the semiconductor element 40 in the vertical direction X. Specifically, a first distance DC1 between the opening 45 and the first side surface 40c of the semiconductor element 40, a second distance DC2 between the opening 45 and the second side surface 40d of the semiconductor element 40, a third distance DC3 between the opening 45 and the third side surface 40e of the semiconductor element 40, and a fourth distance DC4 between the opening 45 and the fourth side surface 40f of the semiconductor element 40 are all equal to one another. Here, if the maximum deviations among the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are within 5% of the first distance DC1, for example, then it can be said that the first distance DC1, the second distance DC2, the third distance DC3, and the fourth distance DC4 are all equal to one another.

[0340] The main surface side drive electrode 41 has an exposed region 46 exposed by the opening 45. The exposed region 46 has a first exposed end 46a and a second exposed end 46b, which are opposite ends in the lateral direction Y. The first exposed end 46a is the end of the exposed region 46 on the third side surface 40e side of the semiconductor element 40. The second exposed end 46b is the end of the exposed region 46 on the fourth side surface 40f side of the semiconductor element 40.

[0341] The semiconductor device 1 includes a plurality of drive wires 60 and one control wire 70. In this embodiment, the plurality of drive wires 60 are composed of two drive wires, a first drive wire 61 and a second drive wire 62. That is, the first drive wire 61 and the second drive wire 62 constitute the most distant combination of the plurality of drive wires 60. The first drive wire 61 is arranged on the control wire 70 side relative to the second drive wire 62.

[0342] The first drive wire 61 and the second drive wire 62 are made of the same metal. In this embodiment, the first drive wire 61 and the second drive wire 62 contain aluminum. The wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 is, for example, within 5% of the wire diameter of the first drive wire 61, it can be said that the wire diameter of the first drive wire 61 is equal to the wire diameter of the second drive wire 62. In this embodiment, the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. Here, if the deviation between the wire diameters of the first drive wire 61 and the second drive wire 62 and the wire diameter of the control wire 70 is, for example, within 5% of the wire diameter of the control wire 70, it can be said that the wire diameters of the first drive wire 61 and the second drive wire 62 are equal to the wire diameter of the control wire 70. An example of the wire diameter of each of the first drive wire 61, the second drive wire 62, and the control wire 70 is 125 μm to 250 μm. In this embodiment, the wire diameter of each of the first drive wire 61, the second drive wire 62, and the control wire 70 is 125 μm.

[0343] The first drive wire 61 and the second drive wire 62 each connect the main surface side drive electrode 41 of the semiconductor element 40 to the drive pad 21. The first drive wire 61 and the second drive wire 62 are each connected to the main surface side drive electrode 41 and the drive pad 21 by, for example, wire bonding. In a plan view, the first drive wire 61 and the second drive wire 62 are arranged at a distance from each other in the horizontal direction Y. The first drive wire 61 and the second drive wire 62 are drive wires at both ends in the horizontal direction Y of the multiple drive wires 60.

[0344] In a plan view, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther apart than the main surface side drive electrode 41 side. In a plan view, the distance between the first drive wire 61 and the second drive wire 62 increases as the wire moves from the main surface side drive electrode 41 toward the drive pad 21 side. The configuration of the first drive wire 61 and the second drive wire 62 will be described in detail below.

[0345] 40 , the first drive wire 61 has a drive electrode-side end 61a and a drive pad-side end 61b. The second drive wire 62 has a drive electrode-side end 62a and a drive pad-side end 62b. In a plan view, a distance DW2 between the drive pad-side end 61b and the drive pad-side end 62b is greater than a distance DW1 between the drive electrode-side end 61a and the drive electrode-side end 62a. In a plan view, the distance DW1 is the minimum value of the distance between the first drive wire 61 and the second drive wire 62, and the distance DW2 is the maximum value of the distance between the first drive wire 61 and the second drive wire 62.

[0346] The distance DY1 is the distance in the horizontal direction Y between an auxiliary line LS1 extending from the drive electrode side end 61a in the vertical direction X and an auxiliary line LS2 extending from the drive pad side end 61b in the vertical direction X, and the distance DY2 is the distance in the horizontal direction Y between an auxiliary line LS3 extending from the drive electrode side end 62a in the vertical direction X and an auxiliary line LS4 extending from the drive pad side end 62b in the vertical direction X. In this case, the distance DY2 is greater than the distance DY1.

[0347] The drive electrode side end 61a of the first drive wire 61 is connected to the first exposed end 46a side of the center of the exposed region 46 of the main surface side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode side end 61a is connected to the first exposed end 46a. Specifically, the drive electrode side end 61a is connected to a portion of the main surface side drive electrode 41 adjacent to the control electrode 43 in the horizontal direction Y, i.e., a portion that forms the bottom of the recess 41a of the main surface side drive electrode 41.

[0348] The drive pad side end 61b of the first drive wire 61 is connected to the first end 21a side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 61b is connected to the first end 21a of the drive pad 21. In one example, the drive pad side end 61b is arranged so that it is at the limit position on the third sealing resin side surface 53 side of the area where wire bonding can be performed as the first end 21a of the drive pad 21. Specifically, the position of the drive pad side end 61b in the horizontal direction Y relative to the first end 21a is set so that a capillary that supplies the first drive wire 61 in a wire bonding apparatus is located at the edge of the first end 21a of the drive pad 21 on the third sealing resin side surface 53 side. The drive pad side end 61b is arranged in a portion closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The drive pad side end 61b is arranged so that it is closer to the fourth sealing resin side surface 54 than the drive electrode side end 61a.

[0349] The drive electrode-side end 62a of the second drive wire 62 is connected to the second exposed end 46b side of the central portion of the exposed region 46 of the main surface-side drive electrode 41 in the horizontal direction Y. In this embodiment, the drive electrode-side end 62a is connected to the second exposed end 46b. In one example, the drive electrode-side end 62a is disposed in the horizontal direction Y at the limit of the region where wire bonding is possible, as the end of the opening 45 on the fourth side face 40f side of the semiconductor element 40. Specifically, the position of the drive electrode-side end 62a in the horizontal direction Y relative to the second exposed end 46b of the exposed region 46 is set so that a capillary for supplying the second drive wire 62 in a wire bonding apparatus is positioned at the edge of the exposed region 46 on the fourth side face 40f side. In the vertical direction X, the drive electrode-side end 62a is aligned with the drive electrode-side end 61a of the first drive wire 61 in the horizontal direction Y. Here, the state in which the drive electrode side end 62a and the drive electrode side end 61a are aligned includes both drive electrode side end portions 61a, 62a overlapping with each other in the vertical direction X, and partial overlapping due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment between the drive electrode side end portions 61a, 62a in the vertical direction X is approximately the same as the variation in wire bonding, it can be said that both drive electrode side end portions 61a, 62a are aligned in the vertical direction X.

[0350] The drive pad side end 62b of the second drive wire 62 is connected to the second end 21b side of the center of the drive pad 21 in the horizontal direction Y. In this embodiment, the drive pad side end 62b is connected to the second end 21b of the drive pad 21. In one example, the drive pad side end 62b is arranged so that it is at the limit position of the second end 21b of the drive pad 21, closer to the fourth sealing resin side surface 54, within the region where wire bonding is possible. Specifically, the position of the drive pad side end 62b relative to the second end 21b in the horizontal direction Y is set so that a capillary for supplying the second drive wire 62 in a wire bonding apparatus is located at the edge of the second end 21b of the drive pad 21 that is closer to the fourth sealing resin side surface 54. The drive pad side end 62b is arranged in a portion closer to the semiconductor element 40 than the center of the drive pad 21 in the vertical direction X. The drive pad side end 62b is arranged so that it is closer to the fourth sealing resin side surface 54 than the drive electrode side end 62a. The drive pad side end 62b is disposed closer to the fourth sealing resin side surface 54 than the semiconductor element 40 in the horizontal direction Y. In this embodiment, the drive pad side end 62b is arranged in the horizontal direction Y while being aligned with the drive pad side end 61b in the vertical direction X. Here, the state in which the drive pad side end 62b and the drive pad side end 61b are aligned in the vertical direction X includes both the drive pad side end 61b, 62b overlapping with each other in the vertical direction X and partial overlap due to manufacturing errors caused by wire bonding. In other words, if the amount of misalignment between the drive pad side end 61b, 62b in the vertical direction X is approximately the same as the variation in wire bonding, then it can be said that both drive pad side end 61b, 62b are aligned in the vertical direction X.

[0351] The control wire 70 connects the control electrode 43 of the semiconductor element 40 to the control pad 31. The control wire 70 is connected to the control electrode 43 and the control pad 31 by, for example, wire bonding. The control wire 70 is made of the same material as the multiple drive wires 60. The control wire 70 has a control electrode-side end 71 and a control pad-side end 72. The control electrode-side end 71 is the end of the control wire 70 that is connected to the control electrode 43. The control pad-side end 72 is the end of the control wire 70 that is connected to the control pad 31. A distance DW3 between the control electrode-side end 71 of the control wire 70 and the drive electrode-side end 61a of the first drive wire 61 is smaller than the distance DW1. A distance DY3 between an auxiliary line LS5 extending from the control electrode-side end 71 along the vertical direction X and an auxiliary line LS6 extending from the control pad-side end 72 along the vertical direction X is larger than the distance DY1 but smaller than the distance DY2. The magnitude of the distance DY3 can be changed arbitrarily. In one example, the distance DY3 is equal to or less than the distance DY1.

[0352] Next, a structure for extending the creepage distance between the drain terminal (rear surface 10b of substrate 10) and the source terminal (drive terminal 22) in the semiconductor device 1 will be described. 36 and 38, a recess 115a is provided in a portion of the back surface 10b of the substrate 10 (the back surface 111b of the inner main body portion 111) on the side of the second sealing resin side surface 52. The recess 115a is formed by a stepped recess from the back surface 111b of the inner main body portion 111 toward the main surface 111a. The recess 115a is formed in the vertical direction X from the first side surface 111c of the inner main body portion 111 to a portion of the inner main body portion 111 that is closer to the second sealing resin side surface 52 than the center of the inner main body portion 111 in the vertical direction X. In this embodiment, the recess 115a is formed so that its edge on the side of the first sealing resin side surface 51 is aligned with the second side surface 40d of the semiconductor element 40 in the vertical direction X. In other words, the semiconductor element 40 is mounted on the main surface 111a of the inner main body portion 111 so that the edge of the recess 115a on the first sealing resin side surface 51 side and the second side surface 40d of the semiconductor element 40 are aligned in the vertical direction X. In this embodiment, the edge of the recess 115a on the first sealing resin side surface 51 side coincides with the edge 111xe of the exposed surface 111x. In this embodiment, the recess 115a is formed over the entire portion of the back surface 111b of the inner main body portion 111 on the second sealing resin side surface 52 side in the horizontal direction Y.

[0353] The depth H1 of the recess 115a is equal to or less than 1 / 2 of the thickness of the substrate 10 (the thickness T of the inner main body portion 111). In this embodiment, the depth H1 is 1 / 3 of the thickness T of the inner main body portion 111. Here, if the deviation between the depth H1 and 1 / 3 of the thickness T is, for example, within 5% of the depth H1, it can be said that the depth H1 is 1 / 3 of the thickness T. In this embodiment, the depth H1 is 0.9 mm. A portion of the sealing resin 50 has entered the recess 115a.

[0354] As shown in FIG. 39, a recess 115b is provided at an end portion of the back surface 111b of the inner main body portion 111 closer to the first sealing resin side surface 51 than the recess 115a, on the third sealing resin side surface 53 side. A recess 115c is provided at an end portion of the back surface 111b of the inner main body portion 111 closer to the first sealing resin side surface 51 than the recess 115a, on the fourth sealing resin side surface 54 side. The recesses 115b and 115c are each formed by a stepped recess from the back surface 111b of the inner main body portion 111 toward the main surface 111a. As shown in FIG. 36, the recess 115b is formed in the lateral direction Y from the second side surface 111d of the inner main body portion 111 to a portion closer to the third sealing resin side surface 53 than ½ of the third distance D3. The recess 115c is formed in the lateral direction Y from the third side surface 111e of the inner main body portion 111 to a portion closer to the fourth sealing resin side surface 54 than half of the fourth distance D4. As described above, the third distance D3 is the distance between the semiconductor element 40 and the second side surface 111d of the inner main body portion 111, and the fourth distance D4 is the distance between the semiconductor element 40 and the third side surface 111e of the inner main body portion 111. The recess 115b is connected to the end of the recess 115a on the second side surface 111d side in the lateral direction Y. The recess 115c is connected to the end of the recess 115a on the third side surface 111e side in the lateral direction Y.

[0355] The depth H2 of the recess 115b is equal to the depth H3 of the recess 115c. Here, if the deviation between the depth H2 and the depth H3 is, for example, within 5% of the depth H2, it can be said that the depth H2 is equal to the depth H3. The depths H2 and H3 are equal to or less than ½ of the thickness T of the inner main body portion 111. In this embodiment, the depths H2 and H3 are ⅓ of the thickness T. That is, the depths H2 and H3 are equal to the depth H1. In this embodiment, the depths H2 and H3 are each 0.9 mm. A portion of the sealing resin 50 has entered the recesses 115b and 115c.

[0356] As shown in FIGS. 36 and 38, recesses 115d are provided in the recesses 113a and 113b of the inner main body portion 111 and in a portion of the through-hole 114. The recesses 115d in the recesses 113a and 113b are formed along the recesses 113a and 113b. The recess 115d in the through-hole 114 is provided on the second sealing resin side surface 52 of the inner surface constituting the through-hole 114 and in the center in the lateral direction Y. The depth H4 of these recesses 115d is equal to the depths H2 and H3 of the recesses 115b and 115c. Here, if the deviation between the depth H4 and the depth H2 and the deviation between the depth H4 and the depth H3 are within 5% of the depth H4, for example, it can be said that the depth H4 is equal to the depths H2 and H3. A portion of the sealing resin 50 fills each of these recesses 115d.

[0357] These recesses 115a, 115b, 115c, and 115d are formed by pressing (punching) the substrate 10. Therefore, the recesses 115a, 115b, 115c, and 115d are formed simultaneously in one step.

[0358] 36, the inner main body portion 111 has a first thin-walled portion 116a that is a portion between the recess 115a and the main surface 111a in the thickness direction Z, a second thin-walled portion 116b that is a portion between the recess 115b and the main surface 111a in the thickness direction Z, a third thin-walled portion 116c that is a portion between the recess 115c and the main surface 111a in the thickness direction Z, and a fourth thin-walled portion 116d that is a portion between the recess 115d and the main surface 111a in the thickness direction Z. As shown in FIGS. 38 and 39, the depths H1, H2, H3, and H4 of the recesses 115a, 115b, 115c, and 115d are equal to one another, and therefore the thickness T1 of the first thin-walled portion 116a, the thickness T2 of the second thin-walled portion 116b, the thickness T3 of the third thin-walled portion 116c, and the thickness T4 of the fourth thin-walled portion 116d are equal to one another. Here, if the maximum deviation amount among the thicknesses T1, T2, T3, and T4 is, for example, within 5% of the thickness T1, it can be said that the thicknesses T1, T2, T3, and T4 are equal to one another.

[0359] The length L1 of the first thin portion 116a in the vertical direction X is longer than the length L2 of the second thin portion 116b in the horizontal direction Y and the length L3 of the third thin portion 116c in the horizontal direction Y. Furthermore, the length L1 is longer than the length L4 of the fourth thin portion 116d. The length L1 is at least twice the lengths L2, L3, and L4. Preferably, the length L1 is at least three times the lengths L2, L3, and L4. In this embodiment, the length L1 is approximately 10 times the lengths L2, L3, and L4. Furthermore, in this embodiment, the lengths L2, L3, and L4 are equal to each other. Here, if the maximum deviation among the lengths L2, L3, and L4 is, for example, within 5% of the length L2, then the lengths L2, L3, and L4 can be said to be equal to each other.

[0360] As shown in Figures 38 and 39, the non-exposed surface 111y of the back surface 111b of the inner main body portion 111 includes a first non-exposed surface 111ya facing the same side as the exposed surface 111x in the first thin-walled portion 116a, a second non-exposed surface 111yb facing the same side as the exposed surface 111x in the second thin-walled portion 116b, a third non-exposed surface 111yc facing the same side as the exposed surface 111x in the third thin-walled portion 116c, and a fourth non-exposed surface 111yd facing the same side as the exposed surface 111x in the fourth thin-walled portion 116d.

[0361] As shown in FIG. 37 , the shortest distance from the second sealing resin side surface 52 to the back surface 10b of the substrate 10 (the exposed surface 111x of the inner main body portion 111) in the vertical direction X is defined as distance DP1, the shortest distance from the third sealing resin side surface 53 to the back surface 10b of the substrate 10 (the exposed surface 111x of the inner main body portion 111) in the horizontal direction Y is defined as distance DP2, and the shortest distance from the fourth sealing resin side surface 54 to the back surface 10b of the substrate 10 (the exposed surface 111x of the inner main body portion 111) in the horizontal direction Y is defined as distance DP3. In this case, the distance DP1 is longer than the distances DP2 and DP3. Preferably, the distance DP1 is two times or more the distances DP2 and DP3. More preferably, the distance DP1 is three times or more the distances DP2 and DP3. More preferably, the distance DP1 is four times or more the distances DP2 and DP3. Even more preferably, the distance DP1 is five times or more the distances DP2 and DP3. In this embodiment, the distance DP1 is approximately six times the distance DP2 and the distance DP3.

[0362] 38, the terminal base end 22x of the drive terminal 22 that is in contact with the second sealing resin side surface 52 is arranged so as to be aligned in the thickness direction Z with the drive pad 21 and the connecting portion 23 of the drive lead 20. That is, the terminal base end 22x is arranged so as to be closer to the sealing resin top surface 56 than the main surface 10a of the substrate 10 in the thickness direction Z. The terminal base end 22x is also arranged so as to be closer to the sealing resin top surface 56 than the front surface 40a of the semiconductor element 40 in the thickness direction Z. In this embodiment, the terminal base end 22x is arranged so as to be closer to the sealing resin top surface 56 than the center of the sealing resin 50 in the thickness direction Z.

[0363] Here, the creepage distance DP between the drain terminal (rear surface 10b of substrate 10) and the source terminal (drive terminal 22) in the semiconductor device 1 is defined by the sum of a distance DP4 from the drive terminal 22 to the sealing resin rear surface 55 along the second sealing resin side surface 52 and the above-mentioned distance DP1. Note that the distance DP4 is the sum of a distance DPA from the terminal base end 22x to the edge of the second inclined surface 52b on the first inclined surface 52a side along the second inclined surface 52b, and a distance DPB from the edge of the first inclined surface 52a on the second inclined surface 52b side to the edge of the sealing resin rear surface 55 on the second inclined surface 52b side along the first inclined surface 52a (DP4 = DPA + DPB).

[0364] In this embodiment, the drive terminals 22 are arranged closer to the sealing resin top surface 56 than the surface 40a of the semiconductor element 40, so the distance DP4 is longer than in a configuration in which the drive terminals 22 are arranged so that they are aligned with the substrate 10 in the thickness direction Z. Furthermore, the length of the first thin portion 116a is longer than the lengths of the second thin portion 116b and the third thin portion 116c, so the distance DP1 is longer than in a configuration in which the length of the first thin portion 116a is equal to or shorter than the lengths of the second thin portion 116b and the third thin portion 116c.

[0365] The operation of this embodiment will be described. 41 and 42 show the configuration of a semiconductor device 200 of the comparative example. The semiconductor device 200 of the comparative example differs from the semiconductor device 1 of the present embodiment mainly in the shape of the substrate 210. For this reason, in the semiconductor device 200 of the comparative example, even if the components other than the substrate 210 have shapes that are somewhat different from the shapes of the components of the semiconductor device 1, for convenience, they are assigned the same reference numerals as those of the semiconductor device 1 of the present embodiment, and their description will be omitted.

[0366] Similar to the substrate 10 of the present embodiment, the substrate 210 has recesses 211a, 211b, 211c, and 211d formed therein. That is, the substrate 210 has a first thin portion 212a formed by the recess 211a, a second thin portion 212b formed by the recess 211b, a third thin portion 212c formed by the recess 211c, and a fourth thin portion 212d formed by the recess 211d. Unlike the substrate 10 of the present embodiment, the length LR1 of the first thin portion 212a, the length LR2 of the second thin portion 212b, the length LR3 of the third thin portion 212c, and the length LR4 of the fourth thin portion 212d are all equal to one another.

[0367] Therefore, in the semiconductor device 200 of the comparative example, the distance DR from the second sealing resin side surface 52 to the back surface 210b of the substrate 210 in the vertical direction X is smaller than the distance DP1 (see FIG. 37). That is, the creepage distance DP of the semiconductor device 1 of the present embodiment is longer than the creepage distance DPR of the semiconductor device 200 of the comparative example. As a result, the semiconductor device 1 of the present embodiment has a higher withstand voltage than the semiconductor device 200 of the comparative example. Here, the withstand voltage indicates the voltage until a short circuit occurs between the drive terminal and the back surface of the substrate. The creepage distance DPR is defined by the sum of the distance DP4 and the distance DR.

[0368] According to the semiconductor device 1 of this embodiment, the following effects can be obtained. (1-1) The back surface 111b of the inner main body portion 111 is exposed from the sealing resin back surface 55. A recess 115a is formed in a portion of the back surface 111b of the inner main body portion 111 on the side of the second sealing resin side surface 52, and a portion of the sealing resin 50 fills the recess 115a. As a result, the distance DP1, which is the shortest distance from the second sealing resin side surface 52 of the sealing resin 50 to the back surface 111b of the inner main body portion 111, is greater than the distance DP2, which is the shortest distance from the third sealing resin side surface 53 to the back surface 111b of the inner main body portion 111, and the distance DP3, which is the shortest distance from the fourth sealing resin side surface 54 to the back surface 111b of the inner main body portion 111. This increases the creepage distance DP from the portion of the sealing resin 50 from which the drive terminal 22 protrudes to the back surface 10b of the substrate 10. This improves the dielectric strength of the semiconductor device 1.

[0369] Incidentally, in order to make the distance DP1 larger than the distances DP2 and DP3, it is conceivable to shorten the length in the vertical direction X from the first side surface 111c of the inner main body portion 111 to the first sealing resin side surface 51. However, since the volume of the inner main body portion 111 becomes smaller, the heat dissipation capability of the substrate 10 for the semiconductor element 40 decreases.

[0370] In view of this, in this embodiment, the first thin portion 116a is formed by forming a recess 115a in a portion of the back surface 111b of the inner main body portion 111 on the side of the second sealing resin side surface 52. This makes it possible to suppress a reduction in the volume of the inner main body portion 111, and therefore to suppress a reduction in the heat dissipation ability of the semiconductor element 40 due to the substrate 10.

[0371] (1-2) An edge (edge ​​111xe) on the second sealing resin side surface 52 side of the back surface 111b (exposed surface 111x) of the inner main body portion 111 exposed from the sealing resin back surface 55 of the sealing resin 50 is disposed closer to the first sealing resin side surface 51 in the vertical direction X than the center of the sealing resin 50 in the vertical direction X. With this configuration, the distance DP1 can be made large, thereby improving the dielectric strength of the semiconductor device 1.

[0372] (1-3) The semiconductor element 40 is disposed on the main surface 10a of the substrate 10 at a portion closer to the first sealing resin side surface 51 than the recess 115a. With this configuration, the thickness of the portion of the substrate 10 directly below the semiconductor element 40 is not reduced by the recess 115a, and therefore heat from the semiconductor element 40 can be dissipated effectively.

[0373] (1-4) The first side surface 40c of the semiconductor element 40 is located closer to the first sealing resin side surface 51 than the center of the sealing resin 50 in the longitudinal direction X on the main surface 10a of the substrate 10. With this configuration, the recess 115a can be formed closer to the first sealing resin side surface 51 in the longitudinal direction X, and therefore the edge (edge ​​111xe) of the back surface 111b (exposed surface 111x) of the inner main body portion 111 exposed from the sealing resin back surface 55 of the sealing resin 50, on the second sealing resin side surface 52 side, can be formed closer to the first sealing resin side surface 51. Therefore, the distance DP1 can be made large, and the dielectric strength of the semiconductor device 1 can be improved.

[0374] (1-5) The depth H1 of the recess 115a is equal to or less than half the thickness (thickness T of the inner main body portion 111) of the substrate 10. With this configuration, a decrease in the volume of the inner main body portion 111 can be suppressed, and therefore a decrease in the heat dissipation ability of the semiconductor element 40 due to the substrate 10 can be suppressed.

[0375] (1-6) The depth H1 of the recess 115a is equal to or less than one-third of the thickness of the substrate 10 (the thickness T of the inner main body portion 111). With this configuration, the reduction in the volume of the inner main body portion 111 can be further suppressed, and therefore the reduction in the heat dissipation ability of the semiconductor element 40 due to the substrate 10 can be further suppressed.

[0376] (1-7) The substrate 10 has a first thin portion 116a formed by the recess 115a, a second thin portion 116b formed by the recess 115b, and a third thin portion 116c formed by the recess 115c. With this configuration, a portion of the sealing resin 50 enters each of the recesses 115a, 115b, and 115c, thereby preventing the substrate 10 from being separated from the sealing resin 50.

[0377] (1-8) The terminal base end 22x of the driving terminal 22 that is in contact with the second sealing resin side surface 52 is provided closer to the sealing resin top surface 56 than the main surface 10a of the substrate 10 in the thickness direction Z. With this configuration, the distance DP4 from the terminal base end 22x to the sealing resin back surface 55 can be made large, thereby improving the dielectric strength of the semiconductor device 1.

[0378] (1-9) The terminal base end 22x of the driving terminal 22 that is in contact with the second sealing resin side surface 52 is provided closer to the sealing resin top surface 56 than the front surface 40a of the semiconductor element 40 in the thickness direction Z. With this configuration, the distance DP4 from the terminal base end 22x to the sealing resin back surface 55 can be made larger, thereby further improving the dielectric strength of the semiconductor device 1.

[0379] (1-10) The terminal base end 22x of the driving terminal 22 that is in contact with the second sealing resin side surface 52 is provided closer to the sealing resin top surface 56 in the thickness direction Z than the center of the sealing resin 50 in the thickness direction Z. With this configuration, the distance DP4 from the terminal base end 22x to the sealing resin back surface 55 can be made large, thereby improving the dielectric strength of the semiconductor device 1.

[0380] (1-11) In a semiconductor device including a semiconductor element containing SiC, even an inductance on the order of nanohenries (nH) can have a significant impact on the characteristics of the semiconductor device. For this reason, a configuration that can reduce the inductance in the semiconductor device is desired.

[0381] In a semiconductor device, the inductance between the source electrode and the source terminal decreases as the width of the conductor connecting the source electrode and the source terminal increases in a planar view. When the conductor is composed of multiple drive wires, the width of the conductor in a planar view is defined as the distance between the two drive wires that make up the most distant combination of the multiple drive wires.

[0382] Incidentally, the two drive wires that constitute the most distant combination of the multiple drive wires are the two drive wires 61 and 62 that constitute the most distant combination of the multiple drive wires 60 if there are two drive wires 60 as in this embodiment.

[0383] In this embodiment, the first drive wire 61 and the second drive wire 62 are connected to the main surface side drive electrode 41 and the drive pad 21 so that the drive pad 21 side is farther away from the main surface side drive electrode 41 in plan view. Specifically, the distance DW2 between the drive pad end 61b and the drive pad end 62b is greater than the distance DW1 between the drive electrode end 61a and the drive electrode end 62a. This configuration allows the conductor width to be wider in plan view compared to a configuration in which the first drive wire 61 and the second drive wire 62 are parallel in plan view. This allows for a larger distance between the first drive wire 61 and the second drive wire 62, thereby reducing the inductance from the main surface side drive electrode 41 to the drive pad 21. In this embodiment, the inductance was reduced by 5 to 7 nH compared to a configuration in which the first drive wire 61 and the second drive wire 62 are parallel and spaced apart by the distance DW1 in plan view. The distance DW1 is the distance between the end 61a of the first drive wire 61 on the drive electrode side and the end 62a of the second drive wire 62 on the drive electrode side.

[0384] (1-12) The size of the drive pad 21 in the horizontal direction Y is larger than the size of the opening 45 in the horizontal direction Y. With this configuration, it is possible to increase the distance DW2 between the drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62. Therefore, the inductance from the main surface side drive electrode 41 to the drive pad 21 can be reduced.

[0385] (1-13) The drive pad side end 61b of the first drive wire 61 is connected to the first end 21a of the drive pad 21, and the drive pad side end 62b of the second drive wire 62 is connected to the second end 21b of the drive pad 21. With this configuration, the distance DW2 between the drive pad side end 61b and the drive pad side end 62b can be made large. Therefore, the distance between the first drive wire 61 and the second drive wire 62 can be made large, which reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0386] (1-14) The drive electrode side end 61a of the first drive wire 61 is connected to the first exposed end 46a of the exposed region 46 of the main surface side drive electrode 41, and the drive electrode side end 62a of the second drive wire 62 is connected to the second exposed end 46b of the exposed region 46. With this configuration, the distance DW1 between the drive electrode side end 61a and the drive electrode side end 62a can be made large. Therefore, the distance between the first drive wire 61 and the second drive wire 62 can be made large, which reduces the inductance from the main surface side drive electrode 41 to the drive pad 21.

[0387] (1-15) The drive pad side end 61b of the first drive wire 61 and the drive pad side end 62b of the second drive wire 62 are each connected to a portion of the drive pad 21 closer to the semiconductor element 40 than the center portion in the vertical direction X. With this configuration, the first drive wire 61 and the second drive wire 62 can each be shortened, thereby further reducing the inductance between the main surface side drive electrode 41 (source electrode) and the drive terminal 22 (source terminal) of the drive lead 20.

[0388] (1-16) The first drive wire 61 and the second drive wire 62 are made of the same material. The wire diameter of the first drive wire 61 is the same as that of the second drive wire 62. With this configuration, the drive wires 61, 62 can be connected to the main surface side drive electrodes 41 and the drive pads 21 using the same wire, simplifying the connection process.

[0389] (1-17) The multiple drive wires 60 and the control wires 70 are made of the same material. The multiple drive wires 60 and the control wire 70 have the same wire diameter. With this configuration, the multiple drive wires 60 can be connected to the main surface side drive electrodes 41 and drive pads 21, and the control wires 70 can be connected to the control electrodes 43 and control pads 31 using the same wire, simplifying the process.

[0390] (1-18) The drive lead 20 and the substrate 10 are formed by, for example, pressing the same metal plate. This configuration simplifies the processing steps for the drive lead 20 and the substrate 10 compared to when the drive lead 20 and the substrate 10 are formed from separate metal plates.

[0391] (1-19) The drive le...

Claims

1. a substrate having a major surface; a semiconductor element including SiC, the semiconductor element being mounted on the main surface and having a surface facing the same direction as the main surface and a drive electrode formed on the surface; A drive pad; a plurality of drive wires connecting the drive electrodes and the drive pads in a spaced-apart relationship; the plurality of drive wires includes a first drive wire and a second drive wire that form a most spaced combination; The first drive wire and the second drive wire are connected to the drive electrode and the drive pad so that the drive pad side is farther away than the drive electrode side when viewed from a first direction that is a direction perpendicular to the main surface. Semiconductor device.

2. When a direction perpendicular to the first direction is defined as a second direction, and a direction perpendicular to the first direction and the second direction is defined as a third direction, the semiconductor element and the drive pad are offset in at least the second direction; the plurality of drive wires are arranged at intervals in the third direction, The first drive wire and the second drive wire are drive wires located at both ends in the third direction among the plurality of drive wires. The semiconductor device according to claim 1 .

3. The semiconductor device includes: an insulating film formed on the driving electrode; an opening formed in a part of the insulating film so as to expose the driving electrode; and When viewed from the first direction, the opening is formed in a rectangular shape with a short side direction aligned in the second direction and a long side direction aligned in the third direction, The size of the drive pad in the third direction is larger than the size of the opening in the third direction. The semiconductor device according to claim 2 .

4. The size of the drive pad in the third direction is larger than the size of the semiconductor element in the third direction. The semiconductor device according to claim 3 .

5. The first drive wire is connected to the drive electrode exposed at an end of the opening in the third direction.

5. The semiconductor device according to claim 3.

6. each of the first drive wire and the second drive wire has a drive electrode side end connected to the drive electrode and a drive pad side end connected to the drive pad; When viewed from the first direction, the drive electrode side ends of the first drive wires and the second drive wires are aligned in the second direction and are arranged in the third direction. The semiconductor device according to any one of claims 2 to 5.

7. each of the first drive wire and the second drive wire has a drive electrode side end connected to the drive electrode and a drive pad side end connected to the drive pad; When viewed from the first direction, the drive electrode side ends of the first drive wire and the second drive wire are offset in the second direction. The semiconductor device according to any one of claims 2 to 5.

8. a substrate having a major surface; a semiconductor element including SiC, the semiconductor element being mounted on the main surface and having a surface facing the same direction as the main surface and a drive electrode formed on the surface; A drive pad; a plurality of drive wires connecting the drive electrodes and the drive pads in a spaced-apart relationship; The semiconductor element is an insulating film formed on the driving electrode; an opening formed in a part of the insulating film so as to expose the driving electrode; and When a direction perpendicular to the main surface is defined as a first direction, a direction orthogonal to the first direction is defined as a second direction, and a direction orthogonal to the first direction and the second direction is defined as a third direction, When viewed from the first direction, the opening is formed in a rectangular shape with a short side direction aligned in the second direction and a long side direction aligned in the third direction, the plurality of drive wires includes a first drive wire and a second drive wire that form a most spaced-apart combination; the drive electrode has an exposed region exposed by the opening; the exposed region has a first exposed end and a second exposed end, which are opposite ends in the third direction; the first driving wire is connected to a portion of the exposed region closer to the first exposed end portion than a central portion of the exposed region in the third direction; The second driving wire is connected to the second exposed end portion side of the exposed region relative to the center portion in the third direction. Semiconductor device.

9. the semiconductor element and the drive pad are offset in at least the second direction; the plurality of drive wires are arranged at intervals in the third direction, The first drive wire and the second drive wire are drive wires located at both ends in the third direction among the plurality of drive wires. The semiconductor device according to claim 8 .

10. The size of the drive pad in the third direction is larger than the size of the opening in the third direction.

10. The semiconductor device according to claim 8.

11. each of the first drive wire and the second drive wire has a drive electrode side end connected to the drive electrode and a drive pad side end connected to the drive pad; When viewed from the first direction, the drive electrode side ends of the first drive wires and the second drive wires are aligned in the second direction and are arranged in the third direction. The semiconductor device according to any one of claims 8 to 10.

12. each of the first drive wire and the second drive wire has a drive electrode side end connected to the drive electrode and a drive pad side end connected to the drive pad; the drive pad has a first end and a second end that are opposite ends in the third direction; the drive pad side end of the first drive wire is connected to the first end side of the drive pad relative to a central portion of the drive pad in the third direction, The end of the second drive wire on the drive pad side is connected to the second end side of the drive pad relative to the center in the third direction. The semiconductor device according to any one of claims 8 to 11.

13. the drive pad side end of the first drive wire is connected to the first end, The drive pad side end of the second drive wire is connected to the second end. The semiconductor device according to claim 12.

14. When viewed from the first direction, the drive electrode has a rectangular shape with its short side aligned in the second direction and its long side aligned in the third direction. The semiconductor device according to any one of claims 8 to 13.

15. a substrate having a main surface and a back surface facing in opposite directions; a semiconductor element including SiC mounted on a main surface of the substrate; a sealing resin that seals the semiconductor element; a terminal protruding from a first side surface of the sealing resin facing in a direction parallel to the main surface; Equipped with a recess formed in a portion of the rear surface of the substrate on the first side surface side, the recess extending from the rear surface toward the main surface; A part of the sealing resin enters the recess, so that the distance from the first side surface to an exposed surface of the rear surface of the substrate that is exposed from the sealing resin is longer than the distance from another side surface of the sealing resin to the exposed surface. Semiconductor device.

16. the sealing resin has a second side surface facing the opposite side to the first side surface, When a direction perpendicular to the main surface of the substrate is defined as a first direction, and an arrangement direction of the first side surface and the second side surface perpendicular to the first direction is defined as a second direction, When viewed from the first direction, an edge of the exposed surface on the first side surface side is disposed closer to the second side surface in the second direction than a central portion of the sealing resin in the second direction. The semiconductor device according to claim 15.

17. the sealing resin has a second side surface facing the opposite side to the first side surface, The semiconductor element is mounted on a portion of the main surface of the substrate that is closer to the second side surface than the recess.

17. The semiconductor device according to claim 15 or 16.

18. When a direction perpendicular to the main surface of the substrate is defined as a first direction, and an arrangement direction of the first side surface and the second side surface perpendicular to the first direction is defined as a second direction, When viewed from the first direction, an end portion of the semiconductor element on the first side surface side is located in a portion of the main surface of the substrate closer to the second side surface than a central portion of the sealing resin in the second direction. The semiconductor device according to claim 17.

19. When a direction perpendicular to the main surface of the substrate is defined as a first direction, and an arrangement direction of the first side surface and the second side surface perpendicular to the first direction is defined as a second direction, When viewed from the first direction, the substrate has a narrow portion adjacent to the second side surface in the second direction, When viewed from the first direction, the semiconductor element is disposed adjacent to the narrow portion in the second direction.

19. The semiconductor device according to claim 17 or 18.

20. The depth of the recess is equal to or less than half the thickness of the substrate. The semiconductor device according to any one of claims 15 to 19.

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