Condition determination support device and condition determination support method

Abstract

To provide a condition determination support device and a condition determination support method that enable an operator to easily determine whether or not a recovery process for cleaning a flow path in a substrate processing device can be performed.SOLUTION: A condition determination support part 111 is the condition determination support part 111 that supports determination of a condition for determining whether or not to execute a recovery processing for cleaning a flow path so as to remove a foreign matter from the flow path through which a processing liquid in a wafer processing system 1 flows, and includes a parameter calculation part 119 that calculates a parameter necessary for determination of the condition for determining whether or not to execute the recovery processing based on an accumulated data obtained by accumulating an intensity of an outgoing light accompanying irradiation of a light to the flow path every time the processing liquid is supplied to a wafer W.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The present disclosure relates to a condition determination support device and a condition determination support method. [Background technology]

[0002] There is known a substrate processing apparatus that optically detects foreign matter in a supply path through which a fluid supplied to a substrate flows (see, for example, Patent Document 1). The substrate processing apparatus described in Patent Document 1 can detect foreign matter in each of a plurality of supply paths and identify which supply path is the source of the foreign matter. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-119996 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a condition determination support device and a condition determination support method that enable an operator to easily determine conditions for whether or not to execute a recovery process for cleaning a flow path in a substrate processing apparatus. [Means for solving the problem]

[0005] In one exemplary embodiment, the condition determination support device is a condition determination support device that supports the determination of conditions for whether or not to perform a recovery process that cleans a flow path through which a processing liquid flows in a substrate processing apparatus to remove foreign matter from the flow path, and includes a parameter calculation unit that calculates parameters necessary for determining the conditions for whether or not to perform the recovery process based on accumulated data obtained by accumulating the intensity of emitted light associated with irradiation of the flow path each time the processing liquid is supplied to a substrate. [Effects of the Invention]

[0006] According to the present disclosure, a condition determination support device and a condition determination support method are provided that enable an operator to easily determine conditions for whether or not to execute a recovery process for cleaning a flow path in a substrate processing apparatus. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view illustrating a schematic configuration of a wafer processing system. [Figure 2] FIG. 2 is a front view illustrating a schematic configuration of the wafer processing system. [Figure 3] FIG. 3 is a schematic diagram showing an example of the liquid processing unit. [Figure 4] FIG. 4 is a schematic diagram illustrating an example of a processing liquid supply section of the liquid processing unit. [Figure 5] FIG. 5 is a side view schematically illustrating an example of a foreign object detection unit. [Figure 6] FIG. 6 is a perspective view schematically illustrating an example of a foreign object detection unit. [Figure 7] FIG. 7 is another side view schematically showing an example of the foreign object detection unit. [Figure 8] FIG. 8 is a block diagram showing an example of a condition determination support device. [Figure 9] FIG. 9 is a diagram showing an example of an electrical signal acquired during one supply of the treatment liquid. [Figure 10] FIG. 10 is a diagram showing an example of counting foreign matter using acquired electrical signals. [Figure 11] FIG. 11 is a graph showing an example of time-series data of count values. [Figure 12] FIG. 12 is a graph showing an example of time-series data when it is determined that the count value includes an abnormal value. [Figure 13] FIG. 13 is a graph showing an example of particle size data. [Figure 14] FIG. 14 is a graph showing an example of updated time-series data. [Figure 15] FIG. 15 is a diagram illustrating an example of a hardware configuration of the control unit. [Figure 16] FIG. 16 is a flowchart showing an example of a condition determination support method. [Figure 17] FIG. 17 is a flowchart showing an example of a condition determination support method. [Figure 18] FIG. 18 is a flowchart showing an example of a foreign object detection processing method. [Figure 19] FIG. 19 is a schematic diagram showing an example of a display screen during condition determination assistance. [Figure 20] FIG. 20 is a schematic diagram showing an example of a display screen during condition determination assistance. [Figure 21] FIG. 21 is a schematic diagram showing an example of a display screen during condition determination support. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, a condition determination support device according to this embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0009] [Wafer processing system] First, the configuration of a wafer processing system as a substrate processing apparatus according to this embodiment will be described. Figures 1 and 2 are a plan view and a front view, respectively, that schematically illustrate the configuration of wafer processing system 1. In this embodiment, the wafer processing system 1 will be described as an example of a photolithography processing system that performs a resist film forming process and a development process on a wafer W (substrate).

[0010] As shown in FIG. 1, the wafer processing system 1 includes a cassette station 2 into which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 3 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The processing station 3 is an example of a substrate processing device. The wafer processing system 1 has a configuration in which the cassette station 2, the processing station 3, and an interface station 4 that transfers the wafers W between them and an exposure device (not shown) adjacent to the opposite side of the processing station 3 are integrally connected. Note that, as shown in FIG. 1, two processing stations 3 are installed between the cassette station 2 and the interface station 4, but one, or three or more processing stations 3 may be installed.

[0011] The cassette station 2 is provided with a plurality of cassette mounting tables 21 and wafer transfer devices 22 and 23. The cassette station 2 uses the wafer transfer device 22 or 23 to transfer wafers W between the cassette C placed on the mounting table 12 and the processing station 3. To this end, the wafer transfer devices 22 and 23 are each provided with drive mechanisms for directions such as the X direction, Y direction, up and down direction, and around the vertical axis (θ direction) as needed, and may also be provided with drive mechanisms for all directions.

[0012] At least one of wafer transfer devices 22 and 23 is capable of transferring wafers W between cassettes C and processing station 3, and is also capable of transferring wafers W to and from processing station 3. Note that the transfer of wafers W to and from processing station 3 refers to, for example, transferring wafers W to and from third block G3, which includes a transfer device accessible by wafer transfer device 33 in processing station 3, which will be described later. Third block G3 may include multiple transfer devices (not shown) arranged vertically.

[0013] The cassette station 2 may include an inspection device (not shown) that inspects the wafer W at a position accessible to either the wafer transfer device 22 or 23.

[0014] The processing station 3 is provided with multiple blocks, e.g., three blocks: a first block G1, a second block G2, and a fourth block G4. Also, as shown in FIG. 2, multiple layers 31 each including a first block G1 and a second block G2 are stacked vertically. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in FIG. 1). A fourth block G4 is provided on the interface station 4 side of the processing station 3 (the positive Y-direction side in FIG. 1) or at a connection portion with another adjacent processing station 3. The fourth block G4 may be provided with multiple transfer devices arranged vertically. The aforementioned third block G3 may also be provided within the processing station 3.

[0015] The first block G1 is provided with a plurality of processing devices, such as a patterning film forming device and a development processing device, both of which are not shown. The patterning film forming device may include, for example, a resist film forming device and an anti-reflection film forming device. For example, a plurality of processing devices are arranged horizontally. The number, arrangement, and type of these processing devices can be selected arbitrarily. The first block G1 may be provided with a liquid processing unit U1 as an example of a patterning film forming device.

[0016] In these patterning film forming apparatuses and developing treatment apparatuses, for example, a predetermined processing liquid or a predetermined gas is supplied onto the wafer W. In this manner, the patterning film forming apparatus forms a resist film used as a mask when forming a pattern on an underlying film, or forms an anti-reflection film for efficiently performing a light irradiation process, such as an exposure process. Meanwhile, in the developing treatment apparatus, a portion of the exposed resist film is removed to form the uneven shape that serves as the mask.

[0017] For example, in the second block G2, heat treatment devices (not shown) that perform heat treatment such as heating and cooling of the wafer W are arranged in a vertical and horizontal direction. Also, in the second block G2, although neither is shown, a hydrophobization treatment device that performs a hydrophobization treatment to improve the adhesion of the resist liquid to the wafer W, and a peripheral exposure device that exposes the peripheral portion of the wafer W are arranged in a vertical and horizontal direction (Z direction in FIG. 2). The number and arrangement of these heat treatment devices, hydrophobization treatment devices, and peripheral exposure devices can also be selected as desired.

[0018] 1, a wafer transfer area 32 is formed in an area sandwiched between a first block G1 and a second block G2 in a plan view. In the wafer transfer area 32, for example, a wafer transfer device 33 is disposed.

[0019] The wafer transfer device 33 has a transfer arm that is movable in, for example, the X direction, Y direction, θ direction, and up and down direction. The wafer transfer device 33 moves within the wafer transfer area 32 and can transfer the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. When there are multiple processing stations 3 as shown in FIG. 1, the wafer transfer device 33 provided in the processing station 3 located on the interface station 4 side can transfer the wafer W to predetermined devices in the first block G1, second block G2, fourth block G4, and also in the fifth block G5 described below.

[0020] A plurality of wafer transfer devices 33 are arranged, for example, one above the other. One wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the upper layers 31 among the multiple layers 31 stacked one above the other (see FIG. 2). Another wafer transfer device 33 can transfer wafers W to a predetermined device located at the height of the multiple layers 31 located below the layers 31. A plurality of wafer transfer areas 32 are provided to enable such transfer of wafers W. Note that the number of wafer transfer devices 33 and the number of layers 31 corresponding to one wafer transfer device 33 can be selected arbitrarily, such as by providing a wafer transfer device 33 for each layer 31.

[0021] The wafer transfer area 32, the first block G1, or the second block G2 may also include a shuttle transfer device (not shown). The shuttle transfer device linearly transfers the wafer W between a space adjacent to one side of the processing station 3 and another space adjacent to the opposite side.

[0022] The interface station 4 is provided with a fifth block G5 equipped with a plurality of transfer devices, and wafer transfer devices 41 and 42. The interface station 4 uses the wafer transfer device 41 or 42 to transfer the wafer W between the fifth block G5, where the wafer W is transferred by the wafer transfer device 33, and the exposure device. To this end, the wafer transfer devices 41 and 42 are each provided with drive mechanisms for directions such as the X direction, Y direction, up / down direction, and around the vertical axis (θ direction) as needed, and may also be provided with drive mechanisms for all directions. At least one of the wafer transfer devices 41 and 42 can support the wafer W and transfer the wafer W between the transfer device in the fifth block G5 and the exposure device.

[0023] A cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device may be provided in the interface station 4 at a position accessible to either of the wafer transfer devices 41 and 42 .

[0024] As described above, the inspection device may be provided in the cassette station 2, but it may also be provided in the processing station 3 and the interface station 4 at a position accessible by any of the transport arms (33, 41, 42 in Figure 1 or Figure 2) provided inside each station.

[0025] The wafer processing system 1 described above is provided with a control device 100. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of wafers W in the wafer processing system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the various processing devices and transport devices described above to realize wafer processing in the wafer processing system 1. The program may be recorded on a computer-readable storage medium and installed into the control device 100 from the storage medium.

[0026] [Wafer Processing System Operation] The wafer processing system 1 is configured as described above. Next, an example of wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0027] First, a cassette C containing a plurality of wafers W is carried into cassette station 2 of wafer processing system 1 and placed on cassette mounting table 21. Next, each wafer W in cassette C is sequentially removed by wafer transfer device 22 or 23 and transferred to a transfer device in third block G3.

[0028] The wafer W transferred to the transfer device in the third block G3 is supported by the wafer transfer device 33 and transferred to a hydrophobization treatment device provided in the second block G2, where hydrophobization treatment is performed. Next, the wafer W is transferred by the wafer transfer device 33 to a resist film forming device (e.g., liquid processing unit U1) where a resist film is formed on the wafer W. The wafer W is then transferred to a heat treatment device where it is pre-baked, and then transferred to the transfer device in the fifth block G5. Note that, when there are multiple processing stations 3 as shown in FIGS. 1 and 2, the wafer W is temporarily placed in the transfer device in the fourth block G4 before being transferred to the transfer device in the fifth block G5, and then transferred between multiple wafer transfer devices 33. Furthermore, the wafer W may be transferred by the wafer transfer device 33 to a peripheral exposure device, where the peripheral portion of the wafer W is exposed to light.

[0029] The wafer W transferred to the delivery device in the fifth block G5 is transferred to the exposure device by wafer transfer devices 41 and 42, and is subjected to exposure processing with a predetermined pattern. Note that the wafer W may be cleaned by a cleaning device before the exposure processing.

[0030] The exposed wafer W is transferred to a transfer device in the fifth block G5 by wafer transfer devices 41 and 42. Thereafter, the wafer W is transferred to a heat treatment device by wafer transfer device 33, where it is subjected to post-exposure baking.

[0031] The wafer W that has been subjected to post-exposure baking is transferred by the wafer transfer device 33 to a developing treatment device and developed. After development is completed, the wafer W is transferred by the wafer transfer device 33 to a heat treatment device 40 and subjected to post-baking.

[0032] Thereafter, the wafer W is transferred by the wafer transfer device 33 to the delivery device in the third block G3, and then transferred by the wafer transfer device 22 or 23 in the cassette station 2 to the cassette C on the predetermined cassette mounting table 21. In this way, a series of photolithography steps is completed.

[0033] It should be noted that the wafer processing system of the present disclosure is not limited to the configuration and operation described above. For example, in the above embodiment, the wafer W is transferred between the interface station 4 and the exposure apparatus, but it does not have to be directly connected to the exposure apparatus. In that case, for example, the wafer W is transferred from the cassette station 2 to the processing station 3, where it is subjected to the necessary processing, and then transferred back to the cassette station 2 for removal to the outside. Furthermore, unnecessary processing equipment listed above may not be provided, or processing may not be performed in that equipment.

[0034] The specific configuration of the substrate processing apparatus is not limited to the wafer processing system 1. The substrate processing apparatus may have any configuration as long as it includes a liquid processing unit that supplies a processing liquid to the wafer W and a control device 100 that can control the liquid processing unit.

[0035] [Liquid processing unit] Next, an example of the liquid processing unit U1 will be described in detail with reference to Figures 3 and 4. The liquid processing unit U1 includes a spin holder 20 and a processing liquid supply unit 30, as shown in Figure 3.

[0036] The rotary holder 20 holds and rotates the wafer W based on operational instructions from the control device 100. The rotary holder 20 includes, for example, a holder 25 and a rotation driver 24. The holder 25 supports the center of the wafer W, which is placed horizontally with its surface Wa facing up, and holds the wafer W by, for example, vacuum suction. The rotation driver 24 is an actuator including a power source such as an electric motor, and rotates the holder 25 around a vertical axis Ax. This causes the wafer W on the holder 25 to rotate.

[0037] The processing liquid supply unit 30 supplies the processing liquid to the surface Wa of the wafer W by ejecting the processing liquid toward the surface Wa based on an operation instruction from the control device 100. The processing liquid supplied by the processing liquid supply unit 30 is a substrate processing solution used to process the wafer W. Examples of processing liquid include a solution (resist) used to form a resist film and a solution (e.g., thinner) used in a pre-wetting process to increase the wettability of the surface Wa to the resist. The processing liquid supply unit 30 includes, for example, a plurality of nozzles 35, a holding head 34, and a supply unit 36.

[0038] The plurality of nozzles 35 each ejects a processing liquid onto the front surface Wa of the wafer W held by the holder 25. The plurality of nozzles 35 are, for example, arranged above the wafer W while being held by a holding head 34, and individually eject the processing liquid downward. The holding head 34 may be configured to be movable in a direction along the front surface Wa of the wafer W by a driving unit (not shown). The number of the plurality of nozzles 35 is not limited, but the following description will be given taking as an example a case where the processing liquid supply unit 30 has 12 nozzles 35 (hereinafter referred to as "nozzles 35A to 35L").

[0039] The nozzles 35A to 35L are each supplied with a processing liquid from the supply unit 36. Different types of processing liquid may be supplied to the nozzles 35A to 35L from the supply unit 36. As an example, different types of resists are supplied to the nozzles 35A to 35J from the supply unit 36, and different types of thinners are supplied to the nozzles 35K and 35L from the supply unit 36.

[0040] 4, the supply unit 36 ​​includes a plurality of supply pipes 45A-45L and a plurality of supply sources 44A-44L. The supply pipe 45A forms a flow path between the nozzle 35A and the supply source 44A, which is a source of the processing liquid to be supplied to (discharged from) the nozzle 35A. The supply source 44A includes, for example, a bottle that stores the processing liquid and a pump that pressure-feeds the processing liquid from the bottle toward the nozzle 35A. Similar to the supply pipe 45A, the supply pipes 45B-45L also form flow paths between the nozzles 32B-32L and the supply sources 44B-44L, which are sources of the processing liquid.

[0041] The supply unit 36 ​​further includes a plurality of on-off valves V provided in the plurality of supply pipes 45A to 45L, respectively. The on-off valves V are switched between an open state and a closed state based on an operational instruction from the control device 100. By switching the on-off states of the plurality of on-off valves V, the flow paths of the supply pipes 45A to 45L are opened and closed, respectively. For example, when one on-off valve V is opened, the processing liquid flows in the flow path of the corresponding one of the supply pipes 45A to 45L, and the processing liquid is discharged from the corresponding one of the nozzles 35A to 35L toward the front surface Wa of the wafer W.

[0042] [Foreign object detection unit] The processing station 3 further includes a foreign matter detection unit 50 configured to detect foreign matter (particles) contained in the processing liquid supplied to the wafer W. The foreign matter detection unit 50 is configured to detect foreign matter in the processing liquid flowing through the flow paths of the plurality of supply pipes 45A-45L, respectively. The foreign matter detection unit 50 may be disposed near the liquid processing unit U1 or may be disposed inside the housing of the liquid processing unit U1. Some elements of the foreign matter detection unit 50 may be provided between the on-off valve V and the nozzles 35A-35L on the flow paths of the supply pipes 45A-45L. An example of the foreign matter detection unit 50 will be described below with reference to FIGS. 5 to 7.

[0043] The foreign matter detection unit 50 forms flow paths (hereinafter referred to as "treatment liquid flow paths") through which the treatment liquids flowing through the supply pipes 45A to 45L are circulated. The foreign matter detection unit 50 detects foreign matter in the treatment liquid flowing through the treatment liquid flow path by receiving light generated in the treatment liquid flow path by irradiating the treatment liquid flow path with irradiation light (e.g., laser light). As shown in FIG. 5, the foreign matter detection unit 50 includes, for example, a housing 52, a flow path forming section 60, and a measurement section 70. The housing 52 accommodates the flow path forming section 60 and the measurement section 70.

[0044] The flow path forming unit 60 forms a plurality of treatment liquid flow paths provided on the flow paths of the supply pipes 45A to 45L, respectively. Each of the treatment liquid flow paths formed by the flow path forming unit 60 is used to detect foreign matter contained in the treatment liquid flowing through the treatment liquid flow path. For example, as shown in FIG. 6, the flow path forming unit 60 has a plurality of treatment liquid flow path forming units 62A to 62L. The treatment liquid flow path forming units 62A to 62L have the same configuration as one another.

[0045] 5, the processing liquid flow path forming unit 62A forms a processing liquid flow path 64 on the flow path of the supply pipe 45A that connects the supply source 44A and the nozzle 35A (see also FIG. 4). The upstream and downstream ends of the processing liquid flow path 64 are connected to the supply pipe 45A. As a result, the processing liquid pressure-fed from the supply source 44A passes through a part of the flow path of the supply pipe 45A, the processing liquid flow path 64 of the processing liquid flow path forming unit 62A, and the remaining part of the flow path of the supply pipe 45A, in that order, and is ejected from the nozzle 35A onto the surface Wa of the wafer W.

[0046] The treatment liquid flow path forming portion 62A includes, for example, a block body 66 having a treatment liquid flow path 64 formed therein. The block body 66 is made of a material that is transmissive to laser light used for foreign matter detection. Examples of materials that can be used to form the block body 66 include quartz and sapphire.

[0047] 6 are configured similarly to one another. Therefore, like the treatment-liquid flow path forming portion 62A, the treatment-liquid flow path forming portions 62B to 62L each include a block main body 66 in which a treatment-liquid flow path 64 is formed.

[0048] 5, the measurement unit 70 includes a light source 72, an irradiation unit 74, a light receiving unit 76, a holding unit 78, and a drive unit 80. The light source 72 generates laser light as irradiation light for detecting foreign matter in the processing liquid. The light source 72 emits laser light, for example, with a wavelength of approximately 400 nm to 1000 nm and an output of approximately 600 mW to 1000 mW.

[0049] The irradiation unit 74 is configured to irradiate the irradiation light from the light source 72 toward each of the treatment liquid flow paths 64 of the treatment liquid flow path forming units 62A to 62L. The irradiation unit 74 is configured, for example, to individually irradiate the irradiation light toward each of the treatment liquid flow paths 64 of the treatment liquid flow path forming units 62A to 62L. The irradiation unit 74 may be disposed below the treatment liquid flow paths 64. The irradiation unit 74 includes an optical member 82 configured, for example, to change the direction of the irradiation light from the light source 72 so that the irradiation light is irradiated toward each of the treatment liquid flow paths 64.

[0050] The optical member 82 includes, for example, a reflecting member, a condenser lens, and a neutral density filter. The reflecting surface of the reflecting member reflects the irradiated light emitted from the light source 72 substantially horizontally upward.

[0051] The holding portion 78 movably holds a part of the optical member 82. The holding portion 78 has, for example, a guide rail 88 and a slide base 84. The guide rail 88 supports the slide base 84 so that it is movable.

[0052] 7, the driving unit 80 uses a power source such as an electric motor to move the slide table 84 along the guide rails 88. As the slide table 84 moves along the guide rails 88, the irradiation unit 74 (the member of the optical member 82 that is held by the holding unit 78) moves along the Y-axis direction.

[0053] The light receiving unit 76 is configured to receive light emitted from the treatment liquid flow path 64 in response to irradiation with irradiation light from the irradiation unit 74. The light receiving unit 76 includes, for example, an optical member 92 and a light receiving element 94. The optical member 92 includes, for example, a condenser lens that condenses the light emitted from the treatment liquid flow path 64 toward the light receiving element 94. A wavelength filter that passes only light having a specific wavelength may be provided inside the optical member 92. The light receiving element 94 receives the light condensed by the optical member 92 and generates an electrical signal corresponding to the received light (detection light). The light receiving element 94 includes, for example, a photodiode that performs photoelectric conversion.

[0054] The optical member 92 and the light receiving element 94 are attached to a support member 86 that extends in the vertical direction. The support member 86 is connected to the slide base 84. For example, the lower end of the support member 86 is connected to the end of the slide base 84 opposite to the end where the optical member 82 is provided. As the drive unit 80 moves the slide base 84, the optical member 92 and the light receiving element 94 move along the Y-axis direction.

[0055] With the above configuration, the drive unit 80 moves the slide base 84, thereby moving both the irradiation unit 74 (the optical member 82 of the irradiation unit 74 that is held by the holder 78) and the light receiving unit 76 along the Y-axis direction. The drive unit 80 moves the irradiation unit 74 and the light receiving unit 76, for example, between a position where the irradiation unit 74 and the light receiving unit 76 face the treatment liquid flow path forming unit 62A, and a position where the irradiation unit 74 and the light receiving unit 76 face the treatment liquid flow path forming unit 62L, respectively.

[0056] As described above, the irradiation unit 74 is disposed below the measurement position set in the treatment liquid flow path 64, and the light receiving unit 76 is disposed to the side of the measurement position. Therefore, when the treatment liquid flow path 64 is irradiated with irradiation light, the light receiving unit 76 receives a portion of light (scattered light) generated by scattering the irradiation light at the measurement position in the treatment liquid flow path 64. When irradiation light is irradiated into the treatment liquid flow path 64 through which a solution such as a treatment liquid flows, scattered light is generated due to the components of the treatment liquid, regardless of the presence or absence of foreign matter. If the solution does not contain foreign matter, most of the irradiation light passes through the treatment liquid flow path 64. On the other hand, if foreign matter is present in the solution, the degree of scattering of the irradiation light in the treatment liquid flow path 64 increases, and the intensity of the light received by the light receiving unit 76 (a portion of the scattered light directed toward the light receiving unit 76) becomes greater than when no foreign matter is present.

[0057] [Configuration of the condition decision support device] A recovery process may be performed in the liquid processing unit U1. The recovery process is a process of cleaning the flow paths through which the processing liquid in the wafer processing system flows to remove foreign matter from the flow paths. For example, the recovery process may be performed on each of the supply pipes 45A-45L. In the recovery process for one of the supply pipes 45A-45L, cleaning may be performed to remove foreign matter from the flow path in the supply pipe and the processing liquid flow path 64 of the corresponding processing liquid flow path forming portion among the processing liquid flow path forming portions 62A-62L.

[0058] The wafer processing system 1 includes a condition determination support device. In one example, the foreign matter detection unit 50 has a control unit 110 that performs processing to detect foreign matters from the electrical signal generated by the light-receiving element 94, and the control unit 110 functions as the condition determination support device. The control unit 110 is disposed, for example, inside the housing 52.

[0059] 8 is a block diagram showing an example of the control unit 110. The control unit 110 has, as functional components (hereinafter referred to as "functional blocks"), a signal acquisition unit 113, a condition determination support unit 111 (condition determination support device), a foreign object detection processing unit 112, and a display control unit 114. The processes executed by these functional blocks correspond to the processes executed by the control unit 110.

[0060] The signal acquiring unit 113 acquires an electrical signal corresponding to the intensity of the detection light from the light receiving unit 76. For example, the signal acquiring unit 113 acquires an electrical signal corresponding to the intensity of light emitted from the processing liquid flow path 64 through which the processing liquid to be monitored flows, one of the processing liquid flow path forming units 62A-62L, from the light receiving element 94. The signal acquiring unit 113 acquires an electrical signal having an amplitude (signal intensity) corresponding to the intensity of the detection light, for example. FIG. 9 is a diagram showing an example of an electrical signal acquired during one supply of processing liquid. In the example of FIG. 9, the horizontal axis represents time and the vertical axis represents signal intensity. A single supply of processing liquid may be an operation from the start of discharging the processing liquid from one of the nozzles 35A-35L onto one wafer W until the completion of that discharging. For example, in a single supply of processing liquid when the nozzle 35A discharges the processing liquid, the light receiving unit 76 receives light emitted from the processing liquid flow path 64 of the processing liquid flow path forming unit 62A due to irradiation of the irradiation light from the irradiation unit 74. The signal acquisition unit 113 outputs the acquired electrical signal to the condition determination support unit 111 .

[0061] The display control unit 114, for example, performs bidirectional communication with the condition determination support unit 111. The display control unit 114 may display data calculated or otherwise performed by the condition determination support unit 111 on the monitor MT. The display control unit 114 may receive data from the condition determination support unit 111 in accordance with the procedure of a condition determination support method described below, and display the data on the monitor MT. Furthermore, the display control unit 114 may output information input on the monitor by a user, such as a worker, to the condition determination support unit 111. Alternatively, the condition determination support unit 111 may include a user input information acquisition unit that acquires information input on the monitor by the user. In this case, the user input information acquisition unit may output the information acquired from the user to the condition determination support unit 111.

[0062] The condition determination support unit 111 supports the determination of conditions for whether or not recovery processing is executable. For example, the condition determination support unit 111 determines conditions for whether or not recovery processing is executable and outputs the determined conditions to the foreign object detection processing unit 112. In addition to the conditions for whether or not recovery processing is executable, the condition determination support unit 111 may also determine judgment conditions (calculation conditions) related to the conditions for whether or not recovery processing is executable. The condition determination support unit 111 has a data accumulation unit 115, a data extraction unit 116, a first foreign object counting unit 117, an appropriateness evaluation unit 118, and a parameter calculation unit 119.

[0063] The data storage unit 115 stores the electrical signals acquired by the signal acquisition unit 113. The data storage unit 115 continuously stores the electrical signals acquired during each supply of the processing liquid shown in FIG. 9. The period of storage by the data storage unit 115 may be a period predetermined by an operator or the like. For example, the data storage unit 115 may store electrical signals for a predetermined number of times the processing liquid is supplied. The data storage unit 115 may store electrical signals acquired during a predetermined unit of time. The unit of time may be, for example, a year, a month, a week, or a day. The data stored by the data storage unit 115 is referred to as "stored data." The stored data is data obtained by accumulating the intensity of emitted light associated with irradiation of the processing liquid flow path 64 with light each time the processing liquid is supplied to the wafer W. FIG. 10 is a diagram showing an example of stored data DT0. In the example of FIG. 10, the stored data DT0 is configured by accumulating electrical signals (data representing the change in signal intensity over time) acquired for each supply of the processing liquid.

[0064] The data extraction unit 116 extracts electrical signals acquired during a certain period from the accumulated data DT0 accumulated by the data accumulation unit 115. The certain period to be extracted may be specified by the user; for example, the user specifies the period on the monitor MT. The certain period to be extracted may be specified by the number of times the treatment liquid is treated, or may be specified in units of time. The example of FIG. 10 shows a case where the accumulated data DT0 is extracted during a period specified by the number of times the treatment liquid is treated. The certain accumulated data extracted by the data extraction unit 116 is also referred to as accumulated data DT0.

[0065] The first foreign matter counting unit 117 counts foreign matter from the electrical signal extracted by the data extracting unit 116. The first foreign matter counting unit 117 counts foreign matter for each supply of processing liquid using the intensity of emitted light resulting from irradiation of the processing liquid flow path 64 with light. An example of counting foreign matter using the acquired electrical signal will be described with reference to FIG. 10 . In the example of FIG. 10 , for example, the first foreign matter counting unit 117 counts the number of times the signal intensity exceeds a provisional threshold value Th1 for each supply of processing liquid as a first foreign matter count value. The provisional threshold value Th1 is, for example, a provisional threshold value for determining whether or not to execute a recovery process. The provisional threshold value Th1 may be a value set in advance taking into account the intensity of scattered light when the irradiated light is scattered by foreign matter in the processing liquid, or may be a value specified by the user on the monitor MT.

[0066] The magnitude of the signal strength correlates with the particle size of the foreign matter. If the particle size of the foreign matter is large, the signal strength will be large, and if the particle size of the foreign matter is small, the signal strength will be small. Therefore, if the threshold for counting foreign matter is large (low sensitivity), there is a possibility that foreign matter will be overlooked, and if the threshold is small (high sensitivity), there is a possibility that noise that is not a foreign matter will be counted as a foreign matter.

[0067] The first foreign matter counting unit 117 generates time-series data from the first count values ​​of foreign matter. The time-series data may be data obtained by rearranging the first count values ​​of foreign matter in chronological order, and will be referred to as "time-series data" hereinafter. The time-series data is data in which count values ​​obtained by counting foreign matter each time a processing liquid is supplied to the wafer W are arranged in chronological order. FIG. 11 is a graph showing an example of the time-series data DT1. The time-series data DT1 may be a graph in which the horizontal axis represents the number of times the processing liquid is supplied and the vertical axis represents the first count values. FIG. 11 schematically shows the time-series data DT1 displayed on the monitor MT. The vertical axis of the graph related to the time-series data DT1 may be represented by the count value per unit liquid volume obtained by dividing the first count value by the volume of liquid flowing (discharged) per supply of processing liquid. The first foreign matter counting unit 117 may output the time-series data DT1 to the display control unit 114, the proper evaluation unit 118, and the parameter calculation unit 119.

[0068] The proper evaluation unit 118 checks whether the first count value in the time-series data DT1 contains an abnormal value. The proper evaluation unit 118 may check whether the first count value in the time-series data contains an abnormal value by statistical processing. For example, the proper evaluation unit 118 checks whether the first count value contains an abnormal value by determining whether the time-series data DT1 conforms to a Poisson distribution. In this case, the proper evaluation unit 118 may calculate the occurrence probability for each foreign substance count value and check based on the occurrence probability. The proper evaluation unit 118 may calculate a chi-square value for each foreign substance count value based on the occurrence probability, and compare the sum of the chi-square values ​​with the occurrence probability for each foreign substance count value to check whether the first count value contains an abnormal value. FIG. 12 is a graph showing an example of time-series data DT1 when it is determined that the first count value contains an abnormal value. FIG. 12 schematically shows the time-series data DT1 displayed on the monitor MT when it is determined that an abnormal value is included. In the time series data DT1 shown in Fig. 12, the count value around supply count 520 and the count value around supply count 580 are abnormally high. In this case, for example, in the time series data DT1 shown in Fig. 12, the probability of abnormal count values ​​appearing may increase, and the total value of the chi-squared values ​​may rise. As a result, it may be determined that the first count value in the time series data DT1 shown in Fig. 12 contains an abnormal value. In the following explanation, unless otherwise specified, it is assumed that the first count value in the time series data DT1 does not contain an abnormal value.

[0069] The parameter calculation unit 119 calculates parameters necessary for determining the conditions for whether or not to execute the recovery process based on the accumulated data DT0. The parameters calculated by the parameter calculation unit 119 may include condition parameters that define the conditions for whether or not to execute the recovery process, and auxiliary parameters for determining the condition parameters. As shown in Fig. 8, the parameter calculation unit 119 has a detection particle size calculation unit 120, a sensitive particle size calculation unit 121, a data update unit 122, a threshold calculation unit 123, and a moving average number calculation unit 124.

[0070] The detected particle size calculation unit 120 calculates the detected particle size based on the accumulated data DT0. The detected particle size is a particle size threshold (signal intensity threshold) for determining whether or not to count a particle as a foreign object when the foreign object detection processing unit 112 counts and records the number of foreign objects after the condition determination support unit 111 determines the conditions for whether or not to execute the recovery process. As will be described in detail later, the count value calculated by the foreign object detection processing unit 112 using the detected particle size as the threshold does not have to be used to determine whether or not to execute the recovery process. The count value calculated by using the detected particle size as the threshold may be recorded in a count value recording unit within the foreign object detection processing unit 112.

[0071] The detected particle size calculation unit 120 may calculate the detected particle size by referring to particle size data DT2 in which the count values ​​of foreign matter are arranged by particle size. The particle size data DT2 may be generated, for example, by the first foreign matter counting unit 117 based on the accumulated data DT0. FIG. 13 is a graph (histogram) showing an example of particle size data DT2. FIG. 13 schematically shows the particle size data DT2 displayed on the monitor MT. In the example of FIG. 13, the horizontal axis represents the particle size of foreign matter, and the vertical axis represents the count value of foreign matter. The particle size data DT2 is generated, for example, as follows, but is not limited to this. The first foreign matter counting unit 117 increases the value of the provisional threshold Th1 by a predetermined interval (in the example of FIG. 13, the particle size threshold is increased by 1 nm) and repeatedly counts foreign matter in the accumulated data DT0 at each provisional threshold Th1 value. In the example of FIG. 13, the first foreign matter counting unit 117 counts foreign matter using an initial value of the provisional threshold Th1 of 155 nm. Next, the first foreign matter counting unit 117 sets the value of the provisional threshold Th1 to 156 nm and counts the foreign matter in the accumulated data DT0. The first foreign matter counting unit 117 increases the provisional threshold Th1 by 1 nm each time and repeats counting the foreign matter in the accumulated data DT0. The first foreign matter counting unit 117 may repeat counting within a predetermined particle size threshold range (for example, a range from the initial value of 155 nm to 50 nm), or may end counting when the count value reaches zero.

[0072] In the example of FIG. 13, the particle size data DT2 shows a decrease in count value as the particle size of the foreign matter increases. Based on the particle size data DT2, the detected particle size calculation unit 120 may determine the particle size that first falls below a predetermined detected count value DV as the detected particle size Th2. For example, as shown in FIG. 13, when the detected count value DV is 4000, the detected particle size Th2 may be 159 mm, which is the particle size that first falls below the detected count value DV. The particle size data DT2 shown in FIG. 13 indicates that when foreign matter is counted in the accumulated data DT0 after the minimum particle size (provisional threshold value Th1) for determining a particle as a foreign matter is set to 159 mm, the count value is approximately 3300. The detected particle size calculation unit 120 outputs the calculated detected particle size Th2 to the sensitive particle size calculation unit 121 and the foreign matter detection processing unit 112.

[0073] The particle size sensitivity calculation unit 121 calculates the particle size sensitivity Th3 based on the accumulated data DT0. The particle size sensitivity Th3 is a particle size threshold for determining whether or not a particle is counted as a foreign object when the foreign object detection processing unit 112 counts foreign objects and displays the count value on the monitor MT after the condition determination support unit 111 determines the conditions for whether or not to execute the recovery process. As will be described in detail later, the count value calculated by the foreign object detection processing unit 112 using the particle size sensitivity Th3 as the threshold may be used to determine whether or not to execute the recovery process. The count value calculated using the particle size sensitivity Th3 as the threshold may be displayed on the monitor MT by the display control unit 114. The particle size sensitivity Th3 is larger than the detected particle size Th2. The particle size sensitivity calculation unit 121 may calculate the particle size sensitivity Th3 based on particle size data DT2. As shown in FIG. 13, the particle size sensitivity calculation unit 121 may calculate the detected particle size Th2 plus a predetermined additional value Δd as the particle size sensitivity Th3. The particle size sensitivity calculation unit 121 may multiply the detected particle size Th2 by n to obtain the particle size sensitivity Th3, where n is a positive integer or a positive decimal point. The particle size sensitivity calculation unit 121 outputs the calculated particle size sensitivity Th3 to the data update unit 122 and the foreign object detection processing unit 112.

[0074] The data update unit 122 generates updated time series data DT3 by updating the time series data DT1 with the sensitive particle size Th3. The data update unit 122 may, for example, use the sensitive particle size Th3 as a threshold value and refer to the accumulated data DT0 to re-count the count value of foreign matter for each supply of processing liquid. For each supply of processing liquid, the data update unit 122 counts the number of times the signal intensity of the processing liquid becomes greater than the signal intensity corresponding to the sensitive particle size Th3 as a second count value of foreign matter. FIG. 14 is a graph showing an example of the updated time series data DT3. FIG. 14 schematically shows the updated time series data DT3 displayed on the monitor MT. In the example of FIG. 14, similar to the example of FIG. 11, the horizontal axis represents the number of supplies of processing liquid, and the vertical axis represents the second count value (more specifically, the count value per unit liquid volume obtained by dividing the second count value by the liquid volume ejected in one supply of processing liquid). 14, the second count value of foreign matter in the updated time series data DT3 is lower throughout the processing cycle compared to the first count value of foreign matter in the time series data DT1. This is because the sensitive particle size Th3 is larger than the detection particle size Th2, and therefore the sensitive particle size Th3 becomes larger than the provisional threshold value Th1, resulting in a decrease in the counting sensitivity.

[0075] The threshold calculation unit 123 calculates a cleaning threshold that defines the conditions for whether or not to execute the recovery process based on the updated time-series data DT3. For example, the threshold calculation unit 123 may first calculate a pre-cleaning threshold. The pre-cleaning threshold CL is calculated, for example, by the following Equation 1. CL = AVG(DT3) × SR (1)

[0076] In Equation 1, AVG(DT3) is the average value of the second count values ​​of foreign matter in the updated time-series data DT3, and SR is a safety factor. The safety factor SR may be determined by the user. For example, the safety factor SR may be set by the user based on the updated time-series data DT3 displayed on the monitor MT by the display control unit 114.

[0077] The threshold calculation unit 123 may calculate the cleaning threshold UCL based on the preliminary cleaning threshold CL. The cleaning threshold UCL is calculated, for example, by the following Equation 2. UCL=CL+N1 (2)

[0078] In Equation 2, N1 represents an adjustment coefficient and has a positive value. The adjustment coefficient N1 may be a value obtained by statistically processing the second count value in the updated time-series data DT3. The adjustment coefficient N1 may be a value obtained by multiplying the standard deviation of the second count value by three. The threshold calculation unit 123 outputs the pre-cleaning threshold value CL and the cleaning threshold value UCL to the foreign matter detection processing unit 112.

[0079] The moving average number calculation unit 124 calculates the number of data points of the moving average value based on the updated time-series data DT3. The number of data points of the moving average value is the moving average number (the number of data points in the moving average value) when the foreign matter detection processing unit 112 compares the moving average value of the values ​​of foreign matter counted using the sensitive particle size Th3 with the cleaning threshold value UCL. The moving average number MV is calculated, for example, by the following equation 3. MV=M1 / AVG(DT3) (3)

[0080] In Equation 3, M1 represents a constant and has a positive value. The constant M1 may be determined in advance. If the moving average number is large, it may take several times for an increase in the count value to be reflected in the moving average, which may delay the timing of executing the recovery process. On the other hand, if the moving average number is small, it may be affected by noise contained in one supply of processing liquid, which may delay the timing of executing the recovery process. In one example, the constant M1 may be determined to avoid these possibilities and ensure appropriate timing for executing the recovery process. The moving average number calculation unit 124 outputs the moving average number MV to the foreign object detection processing unit 112.

[0081] As described above, the parameters calculated by the parameter calculation unit 119 may include the detected particle size Th2, the sensitive particle size Th3, the cleaning threshold UCL, and the moving average number MV. The cleaning threshold UCL and the moving average number MV are condition parameters that define the conditions for whether or not the recovery process can be performed. The detected particle size Th2 and the sensitive particle size Th3 are auxiliary parameters for determining the cleaning threshold UCL (or the cleaning threshold UCL and the moving average number MV) as condition parameters.

[0082] After determining the conditions for whether or not to execute the recovery process, the foreign matter detection processing unit 112 executes processing related to foreign matter detection. The foreign matter detection processing unit 112 determines whether or not to execute the recovery process based on, for example, the cleaning threshold UCL calculated by the threshold calculation unit 123 and the moving average MV calculated by the moving average calculation unit 124. As shown in FIG. 8 , the foreign matter detection processing unit 112 has a third foreign matter counting unit 128, a count value recording unit 129, a second foreign matter counting unit 125, a moving average calculation unit 126, and a recovery process determination unit 127.

[0083] The third foreign matter counting unit 128 receives the detected particle size Th2 from the detected particle size calculation unit 120 and an electrical signal corresponding to the intensity of the detected light from the signal acquisition unit 113. The third foreign matter counting unit 128 counts foreign matter each time the processing liquid is supplied, using the signal strength corresponding to the detected particle size Th2 as a threshold. The third foreign matter counting unit 128 counts the number of times the signal strength of the processing liquid becomes greater than the signal strength corresponding to the detected particle size Th2 each time the processing liquid is supplied, as a third foreign matter count value. The third foreign matter counting unit 128 outputs the third count value to the count value recording unit 129.

[0084] The count value recording unit 129 records the third count value. As described above, the third count value does not need to be used to determine the recovery process. The count value recording unit 129 may output the third count value to the outside, for example, in response to a request from a user. Alternatively, the count value recording unit 129 may output the third count value to the display control unit 114. The display control unit 114 may display the third count value on the monitor MT as time-series data or as log data.

[0085] The second foreign matter counter 125 receives the particle size sensitivity Th3 from the particle size sensitivity calculator 121 and an electrical signal corresponding to the intensity of the detected light from the signal acquirer 113. The second foreign matter counter 125 counts foreign matter each time the processing liquid is supplied, using the signal intensity corresponding to the particle size sensitivity Th3 as a threshold. The second foreign matter counter 125 counts the number of times the signal intensity of the processing liquid becomes greater than the signal intensity corresponding to the particle size sensitivity Th3 each time the processing liquid is supplied, as a fourth foreign matter count value. The fourth count value is output to the display controller 114, and the display controller 114 displays the fourth count value on the monitor MT.

[0086] The moving average value calculation unit 126 receives the moving average number MV from the moving average number calculation unit 124 and the fourth count value for each supply of processing liquid from the second foreign matter counting unit 125. The moving average value calculation unit 126 calculates the moving average value of the fourth count values ​​based on the moving average number MV and the latest fourth count value. The moving average value calculation unit 126 calculates the average value of the fourth count values ​​from a data set including, for example, the latest fourth count value and fourth count values ​​obtained from the most recent multiple supplies of processing liquid (more specifically, the most recent multiple supplies from the same supply pipe) according to the moving average number MV.

[0087] Recovery process determination unit 127 receives cleaning threshold value UCL from threshold calculation unit 123 and receives a moving average value from moving average calculation unit 126 for each supply of processing liquid. Recovery process determination unit 127 compares the moving average value of the fourth count value with cleaning threshold value UCL. Recovery process determination unit 127 may determine that a recovery process needs to be performed, for example, when the moving average value of the fourth count value exceeds cleaning threshold value UCL. When recovery process determination unit 127 determines that a recovery process needs to be performed, it may output a recovery process instruction signal to control device 100, for example. When control device 100 receives the instruction signal, it may control liquid processing unit U1 and the like to supply cleaning liquid to the flow path in the target supply pipe among supply pipes 45A-45L for which it has determined that a recovery process needs to be performed.

[0088] The control unit 110 is configured with one or more control computers. FIG. 15 is a diagram showing an example of the hardware configuration of the control unit 110. For example, the control unit 110 has a circuit 150 shown in FIG. 15. The circuit 150 has one or more processors 151, a memory 152, a storage 153, and an input / output port 154. The storage 153 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the control unit 110 to execute a condition determination support method described below. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk.

[0089] The memory 152 temporarily stores the programs loaded from the storage medium of the storage 153 and the results of calculations by the processor 151. The processor 151 configures each of the above-mentioned functional blocks by executing the programs in cooperation with the memory 152. The input / output port 154 inputs and outputs electrical signals to and from each part of the processing station 3 in accordance with instructions from the processor 151.

[0090] The control unit 110 may be configured with multiple control computers. For example, the foreign object detection processing unit 112 may be configured with one or more control computers, and the condition determination support unit 111 may be configured with another computer that can communicate with the one or more control computers. Note that the hardware configuration of the control unit 110 is not necessarily limited to one in which each functional block is configured by a program. For example, each functional module of the control unit 110 may be configured with a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates such logic circuits.

[0091] [Condition determination support method] Next, a description will be given of an example of the operation of the control unit 110. The control unit 110 operates according to a condition determination support method executed by the condition determination support unit 111 and a foreign object detection processing method executed by the foreign object detection processing unit 112.

[0092] 16 and 17 are flowcharts showing an example of a condition determination support method. In the condition determination support method, steps ST11 to ST29 may be performed in order. In the condition determination support method, a parameter calculation step may be composed of a detection particle size calculation step (step ST19), a sensitivity particle size calculation step (step ST20), a threshold value calculation step (step ST27), and a moving average number calculation step (step ST28).

[0093] First, in step ST11, for example, the data extraction unit 116 determines whether or not a target nozzle and a period have been designated by the user. The data extraction unit 116 may, for example, accept a designation of any one of the nozzles 32B to 32L as a nozzle to be supported (hereinafter referred to as a "target nozzle"). The designation of a nozzle to be supported (a target for which parameters are to be calculated) corresponds to the designation of a flow path of the treatment liquid to be supported. The data extraction unit 116 may, for example, accept a designation in terms of the number of times the treatment liquid is processed, or may accept a designation in units of time, as the designation of the period. The designation of the target nozzle and the period may, for example, be performed by the user on the monitor MT. The display control unit 114 may output the designated target nozzle and period to the data extraction unit 116.

[0094] Next, in step ST12, for example, the data extraction unit 116 extracts data corresponding to the target nozzle and the specified period from the accumulated data accumulated by the data accumulation unit 115. Hereinafter, the part of the accumulated data extracted by the data extraction unit 116 will also be simply referred to as "accumulated data."

[0095] Next, in step ST13, for example, the first foreign matter counting unit 117 counts foreign matters in the accumulated data extracted by the data extracting unit 116. For example, the first foreign matter counting unit 117 counts the number of times the signal intensity becomes greater than the provisional threshold value Th1 for each supply of processing liquid as a first foreign matter count value.

[0096] Next, in step ST14 (display control step), for example, the display control unit 114 displays the time series data DT1 generated from the first count value on the monitor MT. The time series data DT1 may be generated from the first count value of foreign matter by the first foreign matter counting unit 117, output to the display control unit 114, and then displayed on the monitor MT.

[0097] Next, in step ST15 (adequate evaluation step), for example, the appropriate evaluation unit 118 checks whether the first count value in the time-series data DT1 includes an abnormal value. When the appropriate evaluation unit 118 checks, the display control unit 114 may display the time-series data DT1 on the monitor MT (see FIGS. 11 and 12). If the first count value in the time-series data DT1 includes an abnormal value and is determined to be abnormal (step ST15: NO), the appropriate evaluation unit 118 issues a warning to the user in step ST16. In step ST16, for example, the appropriate evaluation unit 118 may output a warning signal to the display control unit 114, which may then display the warning on the monitor MT. After step ST16, the condition determination support method starts again from step ST11. In the new step ST11, for example, the data extraction unit 116 determines whether a new target nozzle and period have been selected by the user.

[0098] If the first count value in the time-series data DT1 does not contain an abnormal value and is determined to be normal (step ST15: YES), the detected particle size calculation unit 120 determines whether or not there is an instruction from the user in step ST17. The detected particle size calculation unit 120 does not calculate the detected particle size Th2 until there is an instruction from the user (step ST17: NO). That is, the detected particle size calculation unit 120 may wait for an instruction from the user to calculate the detected particle size Th2. An instruction from the user here is, for example, an instruction from the user to proceed to the step of calculating the detected particle size Th2. The instruction from the user is, for example, input by the user on the monitor MT and output to the detected particle size calculation unit 120 by the display control unit 114.

[0099] If an instruction is received from the user (step ST17: YES), in step ST18 (display control step), the display control unit 114 may display particle size data DT2 generated based on the accumulated data DT0 on the monitor MT. The particle size data DT2 may be generated by the first foreign matter counting unit 117 upon receiving an instruction from the detected particle size calculation unit 120, and may be output to the display control unit 114 and then displayed.

[0100] Next, in step ST19 (detected particle size calculation step), for example, the detected particle size calculation unit 120 calculates the detected particle size Th2. The detected particle size calculation unit 120 may calculate the detected particle size Th2 based on particle size data DT2. An example of the calculation of the detected particle size Th2 will be described with reference to FIG. 13. As described above, the detected particle size calculation unit 120 may determine the particle size that first falls below the detected count value DV based on the particle size data DT2 as the detected particle size Th2. Instead of this calculation method, the detected particle size calculation unit 120 may set an upper limit for the first count value and determine the particle size at which the first count value starts to decrease from the upper limit as the detected particle size Th2. In the example of FIG. 13, the upper limit for the first count value is set to 4000 particles. In the example of FIG. 13, the first count value exceeds 4000 particles up to a particle size of 158 mm, but falls below 4000 particles at a particle size of 159 mm, and the first count value decreases at particle sizes from 159 mm onwards. As a result, the detected particle size calculation section 120 may set particle sizes of 159 mm or greater as the detected particle size Th2.

[0101] Next, in step ST20 (particle size sensitivity calculation step), for example, the particle size sensitivity calculation unit 121 calculates particle size sensitivity Th3. The particle size sensitivity calculation unit 121 may calculate particle size sensitivity Th3 based on particle size data DT2. An example of calculating particle size sensitivity Th3 will be described with reference to FIG. 13. As described above, the particle size sensitivity calculation unit 121 may calculate the value obtained by adding the additional value Δd to the detected particle size Th2 as the particle size sensitivity Th3. The particle size sensitivity calculation unit 121 may also calculate the value obtained by multiplying the detected particle size Th2 by n as the particle size sensitivity Th3. Instead of these calculation methods, the particle size sensitivity calculation unit 121 may calculate the particle size at which the rate of decrease of the first count value converges within a certain range as the particle size sensitivity Th3. In the example of FIG. 13, the first count value begins to decrease at particle sizes after 159 mm, and the first count value becomes close to 0 at particle sizes after 163 mm, indicating that the rate of decrease has converged. As a result, the particle size sensitivity calculation unit 121 may calculate particle sizes after 163 mm as the particle size sensitivity Th3.

[0102] 17, for example, the display control unit 114 displays the detected particle size Th2 and the sensitive particle size Th3 on the monitor MT, superimposed on the particle size data DT2. The display control unit 114 may, for example, highlight and display the particle size indicating the detected particle size Th2 and the particle size indicating the sensitive particle size Th3.

[0103] Subsequently, in step ST22 (data update step), the data update unit 122 updates the time series data DT1 with the particle sensitivity particle size Th3 to generate updated time series data DT3. The data update unit 122 may, for example, use the signal intensity corresponding to the particle sensitivity particle size Th3 as a threshold value and refer to the accumulated data DT0 to re-count the count value of foreign matter for each supply of processing liquid (may also count the second count value). After step ST22, the data update unit 122 may output the updated time series data DT3 to the display control unit 114. In step ST23, the display control unit 114 displays the updated time series data DT3 on the monitor MT.

[0104] Subsequently, in step ST24, for example, the proper evaluation unit 118 checks whether the second count value in the updated time series data DT3 includes an abnormal value. In step ST24, for example, the data update unit 122 may output the updated time series data DT3 to the proper evaluation unit 118. The proper evaluation unit 118 may output the check result to the data update unit 122. The proper evaluation unit 118 may check whether the second count value in the updated time series data DT3 includes an abnormal value by statistical processing. For example, the proper evaluation unit 118 checks whether the second count value includes an abnormal value by checking whether the updated time series data DT3 conforms to a Poisson distribution.

[0105] If the second count value in the updated time-series data DT3 contains an abnormal value and is determined to be abnormal (step ST24: NO), the proper evaluation unit 118 issues a warning to the user in step ST25. After step ST25, the condition determination support method starts again from step ST22. In the new step ST22, for example, the data update unit 122 may accept a designation of a new period selected by the user. Then, the data update unit 122 may again count the second count value of foreign matter for each supply of treatment liquid during the new period.

[0106] If the second count value in the updated time-series data DT3 does not contain an abnormal value and is determined to be normal (step ST24: YES), the threshold calculation unit 123 determines whether or not there is an instruction from the user in step ST26. The threshold calculation unit 123 does not need to calculate the cleaning threshold UCL until there is an instruction from the user (step ST26: NO). That is, the threshold calculation unit 123 may calculate the cleaning threshold UCL after waiting for an instruction from the user. An instruction from the user here is, for example, an instruction from the user to proceed to the step of calculating the cleaning threshold UCL.

[0107] If an instruction is received from the user (step ST26: YES), in step ST27 (threshold calculation step), for example, the threshold calculation unit 123 calculates a cleaning threshold UCL that defines the conditions for whether or not to execute the recovery process. The threshold calculation unit 123 may calculate the cleaning threshold UCL based on the average value of the second count values ​​of foreign matter in the updated time-series data DT3 and a safety factor SR specified by the user. Thereafter, in step ST28 (moving average calculation step), for example, the moving average calculation unit 124 calculates a moving average MV. The moving average calculation unit 124 may calculate the moving average MV using the average value of the second count values ​​of foreign matter in the updated time-series data DT3.

[0108] Next, in step ST29, for example, the display control unit 114 displays the wash threshold UCL and pre-wash threshold CL on the monitor MT, overlaid on the updated time-series data DT3 (see FIG. 14). The wash threshold UCL and pre-wash threshold CL displayed on the monitor MT may be adjusted by the user (steps ST27 to ST29 may be repeated). For example, if the safety factor SR is input by the user on the monitor MT, the wash threshold UCL and pre-wash threshold CL may vary depending on the value of the safety factor SR. The wash threshold UCL and pre-wash threshold CL may be adjusted based on the variation due to the value of the safety factor SR. Step ST29 marks the end of the series of steps in the condition determination support method.

[0109] [Foreign object detection processing method] 18 is a flowchart showing an example of a foreign matter detection processing method. In the foreign matter detection processing method, steps ST31 to ST36 may be performed in order as one supply of processing liquid is executed. First, in step ST31, for example, the second foreign matter counting unit 125 and the third foreign matter counting unit 128 acquire, from the signal acquiring unit 113, an electrical signal corresponding to the intensity of the detection light.

[0110] Next, in step ST32, the third foreign matter counting unit 128 counts foreign matter using the signal intensity corresponding to the detected particle size Th2 calculated in step ST19 as a threshold. The third foreign matter counting unit 128 counts the number of times the signal intensity is greater than the signal intensity corresponding to the detected particle size Th2 as a third count value of foreign matter. Thereafter, in step ST33, the count value recording unit 129 records the third count value. The third count value does not need to be used to determine whether recovery processing should be performed.

[0111] Next, in step ST34, for example, the second foreign matter counting unit 125 counts foreign matter using the signal intensity corresponding to the sensitive particle size Th3 calculated in step ST20 as a threshold. The second foreign matter counting unit 125 counts the number of times the signal intensity of the processing liquid becomes greater than the signal intensity corresponding to the sensitive particle size Th3 as a fourth count value of foreign matter. Thereafter, in step ST35, for example, the moving average value calculation unit 126 calculates a moving average value of the fourth count value based on the moving average number MV calculated in step ST28 and the latest fourth count value calculated in step ST34.

[0112] Next, in step ST36, for example, the recovery process determination unit 127 compares the moving average value calculated in step ST35 with the cleaning threshold value UCL calculated in step ST27. If the moving average value does not exceed the cleaning threshold value UCL (step ST36: NO), the foreign matter detection process method corresponding to one supply of processing liquid ends without executing step ST37. If the moving average value exceeds the cleaning threshold value UCL (step ST36: YES), the recovery process determination unit 127 may determine that execution of recovery process is necessary. If the recovery process determination unit 127 determines that execution of recovery process is necessary, it may output, for example, a recovery process instruction signal to the control device 100.

[0113] The display control unit 114 may display the calculation results such as the fourth count value on the monitor MT in at least part of steps ST34 to ST36. In the foreign object detection processing method illustrated in Fig. 18, steps ST34 to ST36 do not necessarily have to be performed after steps ST31 and ST32, but may be performed simultaneously with steps ST31 and ST32. The series of steps in the foreign object detection processing method ends with step ST36 or step ST37.

[0114] [Action and effect] When attempting to perform a recovery process on a flow path through which a processing liquid flows in a wafer processing system, it is necessary to determine when the recovery process should be performed, i.e., to set conditions for whether or not the process should be performed. For example, a worker (or operator) may set the conditions for whether or not the process should be performed after analyzing the actual results of particle counting by a particle detection unit. In contrast, the above-described condition determination support device and condition determination support method automatically calculate parameters required to determine the conditions for whether or not the recovery process should be performed to clean the processing liquid flow path in the wafer processing system 1. In this case, the automatically calculated parameters can be used to automatically determine the conditions, or the worker can determine the conditions by viewing the automatically calculated parameters. This allows the worker to easily determine the conditions for whether or not the recovery process should be performed. Note that even when the device itself autonomously determines the parameters, this is equivalent to the worker determining the parameters, since the device performs calculations and other processes based on instructions from the operator.

[0115] The parameter calculation unit 119 may include a detected particle size calculation unit 120 that calculates, based on the accumulated data DT0, a detection particle size Th2 that indicates a particle size threshold for whether or not to count a particle as a foreign object when counting and recording the foreign object after determining the conditions. In this case, the detection particle size Th2 can be calculated to an appropriate value based on the trend of the accumulated data DT0. This allows foreign objects to be counted with appropriate sensitivity.

[0116] The parameter calculation unit 119 may further include a particle size sensitivity calculation unit 121 that, when counting and displaying foreign particles after determining the conditions, calculates a particle size sensitivity Th3, which represents a particle size threshold for whether or not to count a foreign particle and is larger than the detection particle size Th2, based on the accumulated data DT0. In this case, by calculating the particle size sensitivity Th3 when counting and displaying foreign particles separately from the detection particle size Th2, it is possible to count foreign particles suitable for recording and for display, respectively.

[0117] The condition determination support unit 111 may further include a data update unit 122 that generates updated time-series data DT3 by updating time-series data DT1 of count values ​​obtained by counting foreign particles each time a processing liquid is supplied to a wafer W with a particle size sensitivity Th3, and the parameter calculation unit 119 may further include a threshold calculation unit 123 that calculates a cleaning threshold UCL that defines the above-mentioned conditions based on the updated time-series data DT3. In this case, the cleaning threshold UCL is calculated based on the time-series trend of the foreign particle count values. Furthermore, the cleaning threshold UCL is calculated based on the updated time-series data DT3 in which foreign particles are detected with appropriate sensitivity. Therefore, the cleaning threshold UCL can be calculated with high accuracy.

[0118] The parameter calculation unit 119 may further include a moving average number calculation unit 124 that calculates the number of data points of the moving average value (moving average number MV) when comparing the moving average value of the counted value of foreign particles using the sensitive particle size Th3 with the cleaning threshold UCL based on the updated time series data DT3. In this case, the moving average number MV is calculated based on the trend of the counted value of foreign particles along the time series. Furthermore, the moving average number MV is calculated based on the updated time series data DT3 in which foreign particles are detected with appropriate sensitivity. Therefore, the moving average number MV can be calculated with high accuracy.

[0119] The condition determination support unit 111 may further include a correctness evaluation unit 118 that checks whether the foreign matter count in the time-series data DT1 contains any abnormal values, and a display control unit 114 that displays the time-series data DT1 on the monitor MT when the correctness evaluation unit 118 checks. In this case, the accuracy of parameter calculation is improved by checking in advance whether any abnormal values ​​are contained. Furthermore, the operator can easily check whether any abnormal values ​​are present.

[0120] The condition determination support unit 111 may further include a display control unit 114 that displays particle size data DT2, in which the first count values ​​of foreign matter are arranged by particle size based on the accumulated data DT0, on the monitor MT when the detected particle size calculation unit 120 calculates the detected particle size Th2. In this case, the operator can easily understand the relationship between the size of the detected particle size Th2 and the particle size data DT2.

[0121] The detected particle size calculation unit 120 may wait for an instruction from the user to calculate the detected particle size Th2, and the threshold calculation unit 123 may wait for an instruction from the user to calculate the cleaning threshold UCL. In this case, the process proceeds after waiting for an instruction from the operator who is the user, so the operator can recognize the progress of the process supported by the device.

[0122] The threshold calculation unit 123 may calculate the average value of the second count values ​​of foreign matter in the updated time-series data DT3, and calculate the cleaning threshold UCL based on the result of multiplying the average value by a safety factor SR set by the user. In this case, since the cleaning threshold UCL varies depending on the value of the safety factor SR, the user (operator) can have discretion in determining the cleaning threshold UCL.

[0123] The condition determination support unit 111 may further include an appropriate evaluation unit 118 that inspects whether the first count value of foreign matter in the time-series data DT1 includes an abnormal value. The detected particle size calculation unit 120 may calculate a detected particle size Th2 after inspection by the appropriate evaluation unit 118. The sensitive particle size calculation unit 121 may calculate a sensitive particle size Th3 after inspection by the appropriate evaluation unit 118. The threshold calculation unit 123 may calculate a cleaning threshold UCL after the sensitive particle size calculation unit 121 calculates the sensitive particle size Th3. In the condition determination support unit 111, the appropriate evaluation unit 118, the detected particle size calculation unit 120, the sensitive particle size calculation unit 121, and the threshold calculation unit 123 operate in a predetermined order, thereby enabling the cleaning threshold UCL to be calculated using a unified calculation method.

[0124] The parameter calculation step may include a detection particle size calculation step (step ST19) for calculating, based on the accumulated data DT0, a detection particle size Th2 that represents a particle size threshold for whether or not to count a particle as a foreign object when counting and recording the foreign object after determining the conditions. In this case, the detection particle size Th2 can be calculated to an appropriate value based on the trend of the accumulated data DT0. This allows foreign objects to be counted with appropriate sensitivity.

[0125] The parameter calculation step may further include a sensitivity particle size calculation step (step ST20) for calculating a sensitivity particle size Th3, which represents a particle size threshold for whether or not to count a particle as a particle when counting and displaying foreign particles after the conditions have been determined and is larger than the detection particle size Th2, based on the accumulated data DT0. In this case, by calculating the sensitivity particle size Th3 when counting and displaying foreign particles separately from the detection particle size Th2, it is possible to count foreign particles suitable for recording and for display, respectively.

[0126] The condition determination support method may further include step ST22 of generating updated time-series data DT3 by updating time-series data DT1 of count values ​​obtained by counting foreign particles each time the processing liquid is supplied to the wafer W with a particle size sensitive to particle size Th3, and the parameter calculation step may further include a threshold calculation step (step ST27) of calculating a cleaning threshold UCL that defines the conditions based on the updated time-series data DT3 obtained by updating the time-series data DT1 with the particle size sensitive to particle size Th3. In this case, the cleaning threshold UCL is calculated based on the trend of the particle size count values ​​along the time series. Furthermore, the cleaning threshold UCL is calculated based on the updated time-series data DT3 in which foreign particles are detected with appropriate sensitivity. Therefore, the cleaning threshold UCL can be calculated with high accuracy.

[0127] The parameter calculation step may further include a moving average number calculation step (step ST28) for calculating the number of data points of the moving average value when comparing the moving average value of the counted value of foreign particles using the particle size sensitivity Th3 with the cleaning threshold UCL based on the updated time series data DT3. In this case, the moving average number MV is calculated based on the trend of the counted value of foreign particles along the time series. Furthermore, the moving average number MV is calculated based on the updated time series data DT3 in which foreign particles are detected with appropriate sensitivity. Therefore, the moving average number MV can be calculated with high accuracy.

[0128] The condition determination support method may further include a proper evaluation step (step ST15) of inspecting whether the foreign matter count value in the time-series data DT1 includes an abnormal value, and a display control step (step ST14) of displaying the time-series data DT1 on the monitor MT during the inspection in the proper evaluation step. In this case, the accuracy of parameter calculation is improved by inspecting in advance whether the foreign matter count value includes an abnormal value. Furthermore, the operator can easily check whether the foreign matter count value exists.

[0129] The condition determination support method may further include a display control step (step ST18) of displaying particle size data DT2, in which the first count values ​​of foreign matter are arranged by particle size based on the accumulated data DT0, on the monitor MT when the detected particle size Th2 is calculated in the detected particle size calculation step (step ST19). In this case, the operator can easily understand the relationship between the size of the detected particle size Th2 and the particle size data DT2.

[0130] In the detected particle size calculation step (step ST19), the detected particle size Th2 may be calculated after receiving an instruction from the user, and in the threshold calculation step (step ST27), the cleaning threshold UCL may be calculated after receiving an instruction from the user. In this case, the process proceeds after waiting for an instruction from the operator who is the user, so that the operator can recognize the progress of the support process.

[0131] In the threshold calculation step (step ST27), the cleaning threshold UCL may be calculated by calculating an average value of the second count values ​​of foreign matter in the updated time-series data DT3 and multiplying the average value by a safety factor SR set by the user. In this case, since the cleaning threshold UCL varies depending on the value of the safety factor SR, the user (operator) can have discretion in determining the cleaning threshold UCL.

[0132] The condition determination support method may further include an appropriate evaluation step (step ST15) of inspecting whether the first count value of foreign matter in the time-series data DT1 includes an abnormal value. In the detected particle size calculation step (step ST19), the detected particle size Th2 may be calculated after the inspection in the appropriate evaluation step. In the sensitive particle size calculation step (step ST20), the sensitive particle size Th3 may be calculated after the inspection in the appropriate evaluation step. In the threshold calculation step (step ST27), the cleaning threshold UCL may be calculated after the sensitive particle size Th3 is calculated in the sensitive particle size calculation step. In the above condition determination support method, the appropriate evaluation step, the detected particle size calculation step, the sensitive particle size calculation step, and the threshold calculation step are performed in a predetermined order, so that the cleaning threshold UCL can be calculated using a unified method for calculating the cleaning threshold UCL.

[0133] [Variations] Various exemplary embodiments have been described above, but the present invention is not limited to the above-described exemplary embodiments and various additions, omissions, substitutions, and modifications may be made. The control unit 110 may be disposed outside the housing 52. That is, the control unit 110 may be provided in the wafer processing system 1 as a device separate from the foreign object detection unit 50. The condition determination support unit 111 does not have to be included in the control unit 110. The condition determination support unit 111 may be provided in the control device 100 or may be a control medium provided outside the processing station. In this case, the control medium may be, for example, a cloud system.

[0134] 16 and 17, some steps may be omitted. In the condition determination support method, the steps in which the display control unit 114 displays data on the monitor MT (steps ST14, ST18, ST21, ST23, and ST29) may be omitted. In the condition determination support method, the steps in which the user gives an instruction (steps ST17 and ST26) may be omitted.

[0135] 19 to 21 each show a schematic example of information displayed on the monitor MT by the display control unit 114 while the above-described condition determination support method is being executed. The display control unit 114 may display, on the monitor MT, an area in which a graph of the above-described time-series data DT1 or the like is drawn, and an area in which the user sets parameters for adjusting the display format of the graph, etc. Hereinafter, the area in which parameters are set will be referred to as a "first area 180," and the area in which the graph is drawn will be referred to as a "second area 190." On the monitor MT, the first area 180 may be displayed above the second area 190.

[0136] The display contents included in the first area 180 and the second area 190 may be changed based on the progress of the condition determination support method or instructions from the user. When the display contents of the first area 180 and the second area 190 are changed, the size of each area may also be changed. Each of the first area 180 and the second area 190 may be defined by a frame as a part of the screen on the monitor MT (see FIG. 19, etc.), or only the content may be displayed without the frame defining these areas.

[0137] 19, the display control unit 114 displays a graph of sample data (the above-mentioned time-series data DT1) to be referenced for condition determination support in the second area 190. At this time, the display control unit 114 displays a field (input screen) for setting parameters related to the display of the graph of the sample data in the first area 180. In this case, the settable parameters include items for specifying the display target, such as the specification of file data containing the sample data, the time range within the data, and specific conditions (for example, a predetermined detection value; data including this detection value is extracted).

[0138] Other examples of the parameters include graph display settings such as whether to use a moving average value, the foreign object detection sensitivity for display (e.g., the provisional threshold value Th1 described above), and units for each axis. Also, the display may include the lower detection limit value at the time of acquisition of the data to be displayed in the graph, the current recovery process judgment conditions (recovery operation conditions), and average values, as well as the option to display these. In FIG. 19 and other figures, the first area 180, which functions as a setting screen for display parameters, is shown schematically, and may be displayed as a checkbox that allows the user to select, or as a numeric value that allows the user to input.

[0139] 20, the display control unit 114 displays a graph showing the count values ​​for each particle size (a graph related to the particle size data DT2) in the second area 190. At this time, the display control unit 114 displays a field (input screen) for setting parameters related to the display of the graph showing the count values ​​for each particle size in the first area 180. In this case, the parameters that can be set include the display of the provisional detected particle size and sensitive particle size at the current time, as well as conditions for whether or not to perform recovery processing, or parameters correlated to those conditions (such as the above-mentioned preliminary cleaning threshold CL).

[0140] Some of the items described in the example shown in Fig. 19 may also be displayed on the screen shown in Fig. 20. On the screen shown in Fig. 20, the detectable particle size Th2 and the sensitive particle size Th3 are calculated and set while appropriately switching the graph on the screen shown in Fig. 19 to a different display form. The display control unit 114 may display a line ThL indicating the sensitive particle size Th3 on the graph in the second area 190.

[0141] 21, the display control unit 114 displays in the first area 180 a field (input screen) for setting parameters for determining whether or not to execute the recovery process. Examples of the parameters include an upper threshold for the count value, a lower threshold for the count value, an allowable magnification (the safety factor SR), and the adjustment coefficient N1. In the second area 190, the display mode different from that of the graph in the example shown in FIG. 20 can be switched by the determination of the display control unit 114 or by a user instruction to a switching instruction item provided in the first area 180. Note that in the example shown in FIG. 21, the graph displayed in the second area 190 is not limited to a graph showing the relationship between particle size and count value. [Explanation of symbols]

[0142] 111...condition determination support unit (condition determination support device), 114...display control unit, 118...adequate evaluation unit, 119...parameter calculation unit, 120...detected particle size calculation unit, 121...sensitive particle size calculation unit, 123...threshold calculation unit, 124...moving average number calculation unit, UCL...cleaning threshold, DT1...time series data, DT2...particle size data, DT3...updated time series data, MT...monitor, SR...safety factor, ST14, ST18...step (display control step), ST15...step (adequate evaluation step), ST19...step (detected particle size calculation step), ST20...step (sensitive particle size calculation step), ST22...step (data update step), ST27...step (threshold calculation step), ST28...step (moving average number calculation step), Th2...detected particle size, Th3...sensitive particle size.

Claims

1. 1. A condition determination support device that supports determination of conditions for whether or not to execute a recovery process for cleaning a flow path through which a processing liquid flows in a substrate processing apparatus so as to remove foreign matter from the flow path, a parameter calculation unit that calculates parameters necessary for determining whether or not the recovery process can be performed, based on accumulated data obtained by accumulating the intensity of emitted light associated with irradiation of the flow path with light each time the processing liquid is supplied to the substrate.

2. 2. The condition determination support device according to claim 1, wherein the parameter calculation unit includes a detected particle size calculation unit that calculates, based on the accumulated data, a detected particle size that represents a particle size threshold for whether or not the foreign matter is to be counted as the foreign matter when counting and recording the foreign matter after the conditions are determined.

3. 3. The condition determination support device according to claim 2, wherein the parameter calculation unit further includes a sensitive particle size calculation unit that, when counting and displaying the foreign matter after the conditions are determined, represents a particle size threshold for whether or not the foreign matter is to be counted as the foreign matter and calculates a sensitive particle size that is larger than the detection particle size based on the accumulated data.

4. a data updating unit that generates updated time series data by updating time series data of count values ​​obtained by counting the foreign particles every time the processing liquid is supplied to the substrate, using the particle size sensitive to the particle size; 4. The condition determination assisting device according to claim 3, wherein the parameter calculating section further comprises a threshold calculating section that calculates a cleaning threshold that defines the condition based on the updated time-series data.

5. 5. The condition determination support device according to claim 4, wherein the parameter calculation unit further includes a moving average number calculation unit that calculates a number of data points of the moving average value when comparing the moving average value of the counted value of the foreign particles using the sensitive particle size and the cleaning threshold value based on the updated time-series data.

6. an appropriateness evaluation unit that checks whether or not the count value of the foreign matter in time series data of the count value obtained by counting the foreign matter every time the processing liquid is supplied to the substrate includes an abnormal value; a display control unit that displays the time-series data on a monitor when the proper evaluation unit performs an inspection; The condition determination support device according to any one of claims 1 to 5, further comprising:

7. The condition determination support device according to any one of claims 2 to 5, further comprising a display control unit that, when the detected particle size calculation unit calculates the detected particle size, displays particle size data on a monitor in which count values ​​of the foreign matter are arranged by particle size based on the accumulated data.

8. the detected particle size calculation unit waits for an instruction from a user and calculates the detected particle size; The condition determination assisting device according to claim 4 , wherein the threshold calculation unit waits for an instruction from a user to calculate the cleaning threshold.

9. 6. The condition determination support device according to claim 4, wherein the threshold calculation unit calculates an average value of the count values ​​of the foreign matter in the updated time-series data, and calculates the cleaning threshold based on a result of multiplying the average value by a safety factor determined by a user.

10. further comprising an appropriateness evaluation unit that checks whether the count value of the foreign matter in the time-series data includes an abnormal value; the detected particle size calculation unit calculates the detected particle size after the inspection by the accuracy evaluation unit, the sensitive particle size calculation unit calculates the sensitive particle size after the inspection by the accuracy evaluation unit, 6. The condition determination support device according to claim 4, wherein the threshold calculation unit calculates the cleaning threshold after the particle size sensitivity calculation unit calculates the particle size sensitivity.

11. 1. A condition determination support method for supporting determination of conditions for whether or not to execute a recovery process for cleaning a flow path through which a processing liquid flows in a substrate processing apparatus so as to remove foreign matter from the flow path, comprising: The condition determination support method includes a parameter calculation step of calculating parameters necessary for determining the conditions for whether or not the recovery process can be performed, based on accumulated data obtained by accumulating the intensity of emitted light associated with irradiation of light onto the flow path each time the processing liquid is supplied to the substrate.

12. 12. The method for supporting determination of conditions according to claim 11, wherein the parameter calculation step includes a step of calculating, based on the accumulated data, a detected particle size that represents a particle size threshold for whether or not the foreign matter is to be counted as the foreign matter when counting and recording the foreign matter after the conditions are determined.

13. 13. The method for supporting determination of conditions according to claim 12, wherein the parameter calculation step further includes a step of calculating a sensitive particle size, based on the accumulated data, which represents a particle size threshold for whether or not the foreign matter is to be counted as a foreign matter when counting and displaying the foreign matter after the determination of the conditions, and which is larger than the detection particle size.

14. a data updating step of updating time series data of count values ​​obtained by counting the foreign particles every time the processing liquid is supplied to the substrate, using the particle size sensitive to generate updated time series data; 14. The method for assisting in determining conditions according to claim 13, wherein the parameter calculation step further comprises a threshold calculation step of calculating a cleaning threshold that defines the conditions based on the updated time-series data.

15. 15. The method for supporting determination of conditions according to claim 14, wherein the parameter calculation step further includes a moving average number calculation step of calculating, based on the updated time-series data, a number of data points of the moving average value when comparing the moving average value of the counted value of the foreign particles using the particle size sensitivity and the cleaning threshold value.

16. an appropriateness evaluation step of inspecting whether or not the count value of the foreign matter in time series data of the count value obtained by counting the foreign matter every time the processing liquid is supplied to the substrate includes an abnormal value; a display control step of displaying the time-series data on a monitor during the inspection in the proper evaluation step; The method for supporting determination of conditions according to any one of claims 11 to 15, further comprising:

17. The method for supporting determination of conditions according to any one of claims 12 to 15, further comprising a display control step of displaying particle size data on a monitor in which count values ​​of the foreign matter are arranged by particle size based on the accumulated data when the detected particle size is calculated in the detected particle size calculation step.

18. In the step of calculating the detected particle size, the detected particle size is calculated in response to an instruction from a user; 16. The method for assisting determination of conditions according to claim 14, wherein in the threshold calculation step, the cleaning threshold is calculated after waiting for an instruction from a user.

19. 16. The method for supporting determination of conditions according to claim 14, wherein the threshold calculation step calculates an average value of the count values ​​of the foreign matter in the updated time-series data, and calculates the cleaning threshold based on the result of multiplying the average value by a safety factor determined by a user.

20. further comprising an appropriate evaluation step of inspecting whether or not the count value of the foreign matter in the time series data includes an abnormal value; In the detected particle size calculation step, the detected particle size is calculated after the inspection in the proper evaluation step, In the step of calculating the particle size sensitivity, the particle size sensitivity is calculated after the inspection in the step of evaluating the particle size sensitivity.

16. The method for supporting determination of conditions according to claim 14, wherein in the threshold calculation step, the cleaning threshold is calculated after the particle size sensitivity is calculated in the particle size sensitivity calculation step.

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