Solar battery and method of manufacturing the same, layered battery, and solar battery module

Abstract

To provide a solar battery and a method of manufacturing the same, a layered battery, and a solar battery module with respect to the field of photovoltaic generation.SOLUTION: A solar battery includes a substrate which has a first surface including an electrode region and a non-electrode region provided alternately in a first direction, a doped conductive layer located in each electrode region and also located in a part of at least one non-electrode region, and a dielectric layer located between the first surface and doped conductive layer. A first surface opposed to the doped conductive layer has a first surface structure including a plurality of platform structures, and the remaining first surface has a second surface structure including a plurality of pyramid structures. An example of the present disclosure is advantageous in improving light absorptivity by the first surface and also improving the bifaciality factor of the solar battery.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] TECHNICAL FIELD The present disclosure relates to the field of photovoltaic power generation, and more particularly to a solar cell and a manufacturing method thereof, a stacked cell, and a solar cell module. [Background technology]

[0002] Current solar cells mainly include IBC cells (Interdigitated Back Contact), TOPCON (Tunnel Oxide Passivated Contact) cells, PERC cells (Passivated Emitter and Rear Cell) and heterojunction solar cells.

[0003] However, current solar cells are limited by the wavelength range in which they can absorb and utilize light, and their photoelectric conversion efficiency is also limited, and the difference in photoelectric conversion efficiency between the front and back surfaces of the solar cell also affects the overall power generation form of the solar cell. In order to further improve the photoelectric conversion efficiency of solar cells, higher demands have been made for the light absorption rate of the solar cell, as well as for the photoelectric conversion efficiency of the front and back surfaces of the solar cell. Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present disclosure provide a solar cell, a manufacturing method thereof, a stacked cell, and a solar cell module that are advantageous in at least improving the light absorption rate by the first surface and improving the bifacial coefficient of the solar cell. [Means for solving the problem]

[0005] In some embodiments of the present disclosure, a solar cell according to one aspect of the embodiments of the present disclosure includes a substrate having a first surface including electrode regions and non-electrode regions arranged alternately along a first direction, a doped conductive layer located in each of the electrode regions and in a partial region of at least one of the non-electrode regions, and a dielectric layer located between the first surface and the doped conductive layer, wherein the first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures, and the remaining first surface has a second surface structure including a plurality of first pyramid structures.

[0006] In some embodiments, the doped conductive layer is provided in only some of the non-electrode regions.

[0007] In some embodiments, the doped conductive layer includes a plurality of first conductive portions arranged at intervals along the first direction, the first conductive portions corresponding to the electrode regions and located in the corresponding electrode regions, and extending along a second direction intersecting the first direction; and at least one second conductive portion located in the non-electrode region, and the first conductive portions located in two electrode regions adjacent to the non-electrode region in which a second conductive portion is provided are both in contact with and connected to the second conductive portion.

[0008] In some embodiments, the second conductive portion corresponds to the non-electrode region.

[0009] In some embodiments, the second conductive portion includes a plurality of first elongated structures arranged at intervals along the second direction, the first elongated structures extending along the first direction so as to contact and connect adjacent first conductive portions.

[0010] In some embodiments, the second conductive portion further includes at least one second elongated structure extending along the second direction.

[0011] In some embodiments, the second conductive portion includes a plurality of second elongated structures arranged at intervals along the first direction and intersecting with a plurality of the first elongated structures to form a grid-like structure.

[0012] In some embodiments, the first elongated structure has a first width along the second direction, the second elongated structure has a second width along the first direction, and the first conductive portion has a third width along the first direction that is greater than the first width and greater than the second width.

[0013] In some embodiments, the lattice structure has a plurality of mesh holes defined by the first elongated structure and the second elongated structure, a first dimension of the mesh holes in the first direction being 100 μm or less, and a second dimension of the mesh holes in the second direction being 5 μm to 200 μm.

[0014] In some embodiments, the direction from the doped conductive layer toward the dielectric layer is a third direction, a plane perpendicular to the third direction is a projection plane, the orthogonal projection area of ​​the doped conductive layer located in a partial region of the non-electrode area on the projection plane is a first area, the orthogonal projection area of ​​the first surface on the projection plane is a second area, and the ratio of the first area to the second area is 5% to 30%.

[0015] In some embodiments, the substrate further comprises a second surface disposed opposite the first surface, the second surface having a third surface structure including a plurality of second pyramid structures.

[0016] In some embodiments, a dimension at the base of the first pyramid structure is smaller than a dimension at the base of the second pyramid structure.

[0017] In some embodiments of the present disclosure, a stacked solar cell according to another aspect of an embodiment of the present disclosure includes a bottom cell that is the solar cell described in any one of the above embodiments, and a top cell located on one side of the doped conductive layer of the bottom cell, away from the substrate.

[0018] In some embodiments of the present disclosure, a method for manufacturing a solar cell according to another aspect of the embodiments of the present disclosure includes the steps of providing an initial substrate having an initial first surface including initial electrode regions and initial non-electrode regions alternately arranged along a first direction, forming an initial dielectric layer covering the initial first surface, forming an initial doped conductive layer covering a surface of the initial dielectric layer on one side away from the initial substrate, treating the initial doped conductive layer located in a partial region of the initial non-electrode region by a laser process, and removing the initial doped conductive layer and the initial dielectric layer treated by the laser process by an etching process. a step of forming a substrate having a first surface, and performing a first texturing process on the exposed initial first surface so that the remaining portion of the initial dielectric layer located in the electrode region and the non-electrode region is a dielectric layer, and the remaining portion of the initial doped conductive layer located in the electrode region and the non-electrode region is a doped conductive layer, wherein after the first texturing process, the initial electrode region and the initial non-electrode region are electrode region and non-electrode region, respectively, and the first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures, and the remaining portion of the first surface has a second surface structure including a plurality of first pyramid structures.

[0019] In some embodiments, the initial substrate further has an initial second surface arranged opposite to the initial first surface, and the method further includes a step of performing a second texturing process on the initial second surface so that the initial second surface is converted into a second surface before forming the initial dielectric layer, the second surface having a third surface structure including a plurality of second pyramid structures, and a one-dimensional dimension at the base of the first pyramid structure is smaller than a one-dimensional dimension at the base of the second pyramid structure.

[0020] In some embodiments, in the step of performing the second texturing process on the initial second surface, the second texturing process is further performed on the initial first surface, and the initial first surface has an initial first surface structure including a third pyramid structure.

[0021] In some embodiments, after forming the third pyramid structure and before forming the initial dielectric layer, the method further includes performing a polishing process on the initial first surface so that the third pyramid structure is converted into the platform structure.

[0022] In some embodiments, the initially doped conductive layer located in the initial non-electrode region is divided into laser active regions that are spaced apart along a second direction or that are spaced apart along both the first direction and the second direction that intersect with the second direction, and the step of treating the initially doped conductive layer located in a portion of the initial non-electrode region by the laser process includes treating the initially doped conductive layer located in the laser active region by the laser process.

[0023] In some embodiments, the laser employed in the laser process is a picosecond laser, with a wavelength between 300 nm and 1000 nm.

[0024] In some embodiments of the present disclosure, a solar cell module according to another aspect of an embodiment of the present disclosure includes a battery string connected by a plurality of solar cells described in any one of the above embodiments, or connected by a plurality of stacked cells, or connected by a plurality of solar cells formed by the manufacturing method described in any one of the above embodiments, a sealing adhesive film for covering the surface of the battery string, and a cover plate for covering the surface of the sealing adhesive film that is spaced from the battery string. [Effects of the Invention]

[0025] On the other hand, in addition to the dielectric layer and doped conductive layer sequentially stacked on the electrode region to form a first passivation contact structure in the electrode region, a dielectric layer and a doped conductive layer sequentially stacked on a portion of at least one non-electrode region are also designed. The portion of the dielectric layer and doped conductive layer is used to form a second passivation contact structure in the non-electrode region. The non-electrode region is advantageous not only for reducing the probability of carrier recombination in the non-electrode region through the second passivation contact structure but also for transporting and collecting carriers in the non-electrode region and providing them to the electrode region. This further improves the carrier collection efficiency of the entire first surface, i.e., further reduces carrier loss across the entire first surface. Furthermore, because the portion of at least one non-electrode region is not blocked by the dielectric layer and the doped conductive layer, some light can be irradiated to the portion of the non-electrode region without passing through the dielectric layer and the doped conductive layer, which is advantageous for improving the light absorption rate of the portion of the non-electrode region, thereby further improving the photoelectric conversion efficiency of the first surface.

[0026] On the other hand, the first surface facing the doped conductive layer includes an electrode region and a portion of a non-electrode region. The portion of the non-electrode region is provided with a doped conductive layer. The first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures. In other words, the portion of the first surface is a polished structure and has a relatively flat surface morphology compared to a completely pyramidal structure, which is advantageous for improving the uniformity of the formed dielectric layer and doped conductive layer, and therefore the dielectric layer and doped conductive layer formed in the electrode region also have a relatively flat morphology. This is advantageous for improving the passivation effect of the dielectric layer and doped conductive layer on the first surface and further reducing the defect density of the first surface.

[0027] In contrast, the remaining first surface, i.e., the first surface not facing the doped conductive layer, has a second surface structure including a plurality of first pyramid structures, so that light incident on the remaining first surface at different angles is more likely to be absorbed by the remaining first surface via the first pyramid structures, thereby further improving the light absorption rate by the remaining first surface.

[0028] Therefore, by providing a dielectric layer and a doped conductive layer in both the electrode region and a portion of the non-electrode region, and by designing the first surface facing the doped conductive layer to have a platform structure and the first surface not facing the doped conductive layer to have a first pyramid structure, the passivation effect of the dielectric layer and the doped conductive layer on the first surface is improved, which is advantageous not only for reducing the probability of carrier recombination on the first surface but also for improving the light absorption rate of the first surface. The combination of these two aspects is advantageous for improving the photoelectric conversion efficiency of the first surface, and thereby for improving the bifacial coefficient of the solar cell. [Brief explanation of the drawings]

[0029] One or more embodiments are illustratively described by figures in the corresponding drawings, and these illustrative descriptions are not intended to limit the embodiments, and unless otherwise specified, the figures in the drawings are not intended to limit the scale. In order to more clearly explain the embodiments of the present application or the technical means in the prior art, the drawings necessary for the embodiments are briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can derive other drawings based on these drawings without any creative efforts.

[0030] [Figure 1] 1 is a schematic diagram of a local cross-sectional structure of a solar cell according to an embodiment of the present disclosure; [Figure 2] FIG. 2 is an enlarged cross-sectional structural schematic diagram of the square box I in FIG. 1. [Figure 3] 1 is a schematic diagram of a first type of local top view structure of a solar cell according to an embodiment of the present disclosure. [Figure 4]FIG. 2 is a schematic diagram of a second type of local top view structure of a solar cell according to an embodiment of the present disclosure. [Figure 5] FIG. 10 is a schematic diagram of a third type of local top view structure of a solar cell according to an embodiment of the present disclosure. [Figure 6] FIG. 10 is a schematic diagram of a fourth type of local top view structure of a solar cell according to an embodiment of the present disclosure. [Figure 7] FIG. 2 is an enlarged schematic cross-sectional view of the rectangular box II in FIG. 1. [Figure 8] 1 is a schematic diagram of a top view of a base of a first pyramid structure in a solar cell according to an embodiment of the present disclosure. FIG. [Figure 9] FIG. 10 is another schematic top view of the bottom of the first pyramid structure in a solar cell according to an embodiment of the present disclosure. [Figure 10] FIG. 2 is another schematic diagram of a local cross-sectional structure of a solar cell according to an embodiment of the present disclosure. [Figure 11] FIG. 10 is a schematic diagram of a local cross-sectional structure of a stacked battery according to another embodiment of the present disclosure. [Figure 12] FIG. 10 is a schematic diagram of a local cross-sectional structure of an initial substrate in a solar cell manufacturing method according to yet another embodiment of the present disclosure. [Figure 13] FIG. 10 is a schematic diagram of a locally enlarged cross-sectional structure of the initial substrate after a second texturing process is performed in a solar cell manufacturing method according to yet another embodiment of the present disclosure. [Figure 14] FIG. 10 is a partially enlarged schematic cross-sectional view of the initial substrate after polishing in a solar cell manufacturing method according to yet another embodiment of the present disclosure. [Figure 15] 10 is a schematic diagram of a local cross-sectional structure in which an initial dielectric layer and an initial doped conductive layer are formed on an initial substrate in a method for manufacturing a solar cell according to yet another embodiment of the present disclosure. FIG. [Figure 16] FIG. 10 is a schematic diagram of a local cross-sectional structure of a structure after an initial doped conductive layer formed in a solar cell manufacturing method according to yet another embodiment of the present disclosure is treated by a laser process. [Figure 17]FIG. 10 is a schematic diagram of a local top view of a structure after an initial doped conductive layer formed in a solar cell manufacturing method according to yet another embodiment of the present disclosure is treated by a laser process. [Figure 18] FIG. 10 is another schematic top view of a local structure of a structure after treating an initially doped conductive layer formed in a solar cell manufacturing method according to yet another embodiment of the present disclosure with a laser process. [Figure 19] FIG. 10 is a schematic diagram of a local three-dimensional structure of a solar cell module according to yet another embodiment of the present disclosure. [Figure 20] 20 is a schematic diagram of a cross-sectional structure taken along the cross-sectional direction MM1 of FIG. 19. DETAILED DESCRIPTION OF THE INVENTION

[0031] As can be seen from the background art, there is a need to improve the light absorption rate of solar cells and to improve the photoelectric conversion efficiency of the front or back surface of solar cells.

[0032] As can be seen from the analysis, the backside of most TOPCon batteries has a fully polished structure. The silicon oxide layer located on the backside of the battery substrate is 1-2 nm thick. The main function of the silicon oxide layer is to act as a tunneling layer for the majority of carriers, while also providing chemical passivation and reducing interface defects on the backside of the substrate. The main function of the doped polycrystalline silicon layer located on the backside of the battery substrate is to act as an electric field passivation layer, forming band bending on the backside of the substrate, realizing selective carrier transport on the backside of the substrate, and reducing carrier recombination losses.

[0033] Generally speaking, using a doped polycrystalline silicon layer with uniform material properties to cover the entire back surface of the battery achieves good passivation effect and good carrier transport and collection capabilities on the back surface of the battery. However, the doped polycrystalline silicon layer has a strong absorption rate for light in the 300 nm to 1200 nm band and tends to absorb most of the incident light, which significantly reduces the light incident on the back surface of the battery that is blocked by the doped polycrystalline silicon layer. This reduces the absorption rate of the incident light on the back surface of the battery, which has a significant negative impact on both the photo-generated current and the bifacial coefficient of the battery.

[0034] The present disclosure provides a solar cell, a manufacturing method thereof, a stacked cell, and a solar cell module. In the solar cell, on the one hand, dielectric layers and doped conductive layers are designed to be sequentially stacked on the electrode region, and on the other hand, dielectric layers and doped conductive layers are designed to be sequentially stacked on a portion of at least one non-electrode region. The partial dielectric layers and doped conductive layers are advantageous not only for reducing the probability of carrier recombination in the non-electrode region, but also for transporting and collecting carriers in the non-electrode region and providing them to the electrode region, thereby further improving the carrier collection efficiency of the entire first surface, i.e., further reducing carrier loss across the entire first surface. Furthermore, because the portion of at least one non-electrode region is not blocked by the dielectric layers and doped conductive layers, this is advantageous for improving the light absorption rate of the portion of the non-electrode region, thereby further improving the photoelectric conversion efficiency of the first surface. On the other hand, the first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures. In other words, the polished structure of the portion of the first surface provides a relatively flat surface morphology, which is beneficial for improving the uniformity of the formed dielectric layer and doped conductive layer, thereby improving the passivation effect of the dielectric layer and doped conductive layer on the first surface and further reducing the defect density of the first surface. In contrast, the remaining first surface has a second surface structure including a plurality of first pyramid structures, which increases the probability that light incident on the remaining first surface at different angles will be absorbed by the remaining first surface via the first pyramid structures, thereby further improving the light absorption rate of the remaining first surface. Therefore, in a solar cell designed according to one embodiment of the present disclosure, this not only improves the passivation effect of the dielectric layer and doped conductive layer on the first surface and reduces the probability of carrier recombination at the first surface, but also improves the light absorption rate of the first surface. The combination of these two aspects is beneficial for improving the photoelectric conversion efficiency of the first surface, thereby improving the bifacial coefficient of the solar cell.

[0035] Hereinafter, each embodiment of the present application will be described in detail with reference to the drawings. Those skilled in the art will understand that each embodiment of the present application provides many technical details to help readers better understand the present application. However, even without these technical details and various changes and modifications based on each of the following embodiments, the technical means claimed for protection of the present application can be realized.

[0036] An embodiment of the present disclosure provides a solar cell, and the solar cell according to the embodiment of the present disclosure will be described in detail below in conjunction with the drawings.

[0037] 1 to 3, the solar cell includes a substrate 100 having a first surface 100a including electrode regions 101 and non-electrode regions 102 arranged alternately along a first direction X, doped conductive layers 103 located in each of the electrode regions 101 and in a partial region of at least one of the non-electrode regions 102, and a dielectric layer 104 located between the first surface 100a and the doped conductive layer 103. The first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, and the remaining first surface 100a has a second surface structure 120 including a plurality of first pyramid structures 140.

[0038] Here, Fig. 1 is a schematic diagram of a local cross-sectional structure of a solar cell according to one embodiment of the present disclosure. Fig. 2 is an enlarged schematic diagram of the cross-sectional structure of a square box 1 in Fig. 1. Fig. 3 is a schematic diagram of a first type of local top surface structure of a solar cell according to one embodiment of the present disclosure. Note that Fig. 1 can be considered as a type of schematic diagram of a cross-sectional structure along a plane perpendicular to the second direction Y in Fig. 3.

[0039] The number of electrode regions 101 and the number of non-electrode regions 102 may both be plural. The electrode regions 101 and the non-electrode regions 102 are provided alternately along the first direction X. In other words, the electrode regions 101 may be located within the gap between adjacent non-electrode regions 102, and the non-electrode regions 102 may be located within the gap between adjacent electrode regions 101.

[0040] Note that an embodiment of the present disclosure does not limit the number of electrode regions 101 and the number of non-electrode regions 102. Fig. 1 shows only two electrode regions 101 and three non-electrode regions 102. Furthermore, the first surface 100a facing the doped conductive layer 103 refers to the first surface 100a that overlaps with the orthogonal projection of the doped conductive layer 103 on the first surface 100a.

[0041] In some cases, referring to FIG. 4, FIG. 4 is a schematic diagram of a second type of local top structure of a solar cell according to an embodiment of the present disclosure. Not all of the non-electrode regions 102 have the doped conductive layer 103. Only some of the non-electrode regions 102 may have the doped conductive layer 103, and only a portion of the non-electrode regions 102 having the doped conductive layer 103 faces the doped conductive layer 103, while the remaining portion is not blocked by the doped conductive layer 103, as will be described in detail later. In other cases, referring to FIG. 1 or FIG. 3, all of the non-electrode regions 102 have the doped conductive layer 103.

[0042] In both of the above cases, the dielectric layer 104 and the doped conductive layer 103 are designed to be sequentially stacked on the electrode region 101 to form a first passivation contact structure in the electrode region 101, and the dielectric layer 104 and the doped conductive layer 103 are also designed to be sequentially stacked on a portion of at least one non-electrode region 102. The portion of the dielectric layer 104 and the doped conductive layer 103 are used to form a second passivation contact structure in the non-electrode region 102. This not only benefits the non-electrode region 102 in reducing the probability of carrier recombination in the non-electrode region 102 through the second passivation contact structure, but also in transporting and collecting carriers in the non-electrode region 102 and providing them to the electrode region 101. This further improves the carrier collection efficiency across the entire first surface 100a, i.e., further reduces carrier loss across the entire first surface 100a. In addition, since at least a portion of each non-electrode region 102 is not blocked by the dielectric layer 104 and the doped conductive layer 103, some light can be irradiated onto some of the non-electrode regions 102 without passing through the dielectric layer 104 and the doped conductive layer 103, which is advantageous for improving the light absorption rate of some of the non-electrode regions 102, thereby further improving the photoelectric conversion efficiency of the first surface 100a.

[0043] It should be noted that whether the first passivation contact structure is located mainly in the electrode region 101 or the second passivation contact structure is located in the non-electrode region 102, both can reduce carrier recombination on the first surface 100a, but they mainly exert a passivation effect on the first surface 100a in different regions, which is advantageous for increasing the open-circuit voltage of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.

[0044] On the other hand, the first surface 100a facing the doped conductive layer 103 includes an electrode region 101 and a non-electrode region 102 on which the doped conductive layer 103 is provided. The portion of the surface has a first surface structure 110 including a plurality of platform structures 130. In other words, the portion of the surface is a polished structure and has a relatively flat surface morphology compared to a complete pyramid structure. This is advantageous for improving the uniformity of the dielectric layer 104 and the doped conductive layer 103 formed based on the portion of the surface, and therefore the dielectric layer and the doped conductive layer formed on the electrode region 101 also have a relatively flat morphology. This is advantageous for improving the passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the first surface 100a and further reducing the defect density of the first surface 100a. The platform structures 130 can be considered as the base portions of the pyramid structures, i.e., the structures remaining after removing at least the tops of the pyramid structures.

[0045] In contrast, the remaining first surface 100a, i.e., the first surface 100a not facing the doped conductive layer 103, has a second surface structure 120 including a plurality of first pyramid structures 140, so that the probability that light incident on the remaining first surface 100a at different angles will be absorbed by the remaining first surface 100a through the first pyramid structures 140 is increased, thereby further improving the light absorption rate by the remaining first surface 100a.

[0046] In some cases, the first surface 100a facing the doped conductive layer 103 is the first portion. The first portion includes the electrode region 101 and the non-electrode region 102 on which the doped conductive layer 103 is provided. The first surface 100a not facing the doped conductive layer 103 is the second portion. The second portion has a second surface structure 120 including a plurality of first pyramid structures 140. The first portion, i.e., the electrode region and some of the non-electrode regions, are provided with the dielectric layer 104 and the doped conductive layer 103. Designing the first portion to have the surface morphology of the platform structure 130 and the second portion to have the surface morphology of the first pyramid structures 140 improves the passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the entire first surface 100a, which is advantageous not only for reducing the probability of carrier recombination on the entire first surface 100a but also for improving the light absorption rate of the entire first surface 100a. The cooperation of the two aspects is advantageous for improving the photoelectric conversion efficiency of the entire first surface 100a, and thus for improving the bifacial coefficient of the solar cell.

[0047] In some embodiments, the electrode region 101 refers to a region of the substrate 100 facing an electrode in the thickness direction of the substrate 100, i.e., along the third direction Z, or can be understood as a region where the orthogonal projection of the electrode on the substrate 100 is located. The non-electrode region 102 refers to a region of the substrate 100 that does not face an electrode, or can be understood as a region where the orthogonal projection of a region other than the electrode on the substrate 100 is located. In practical applications, the orthogonal projection area of ​​the electrode region 101 on the substrate 100 can be equal to or greater than the orthogonal projection area of ​​the electrode on the substrate 100, which advantageously ensures that all regions where the electrode and the substrate 100 contact each other are the electrode region 101. Note that the above-mentioned electrodes are all electrodes facing the first surface 100a of the substrate 100, as described below. In some subsequent embodiments, the electrode facing the first surface 100a of the substrate 100 is the first electrode.

[0048] An embodiment of the present disclosure will be described in more detail below in conjunction with the drawings.

[0049] 1, the substrate 100 further includes a second surface 100b disposed opposite the first surface 100a. In some cases, the first surface 100a may be the back surface of the solar cell, and the second surface 100b may be the front surface of the solar cell.

[0050] In some embodiments, the solar cell may be a TOPCon cell. The electrode region 101 and a portion of the non-electrode region 102 are provided with a dielectric layer 104 and a doped conductive layer 103. The first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, and the other surface 100a not facing the doped conductive layer 103 has a second surface structure 120 including a plurality of first pyramid structures 140. This increases the short-circuit current of the solar cell by approximately 124 mA, the photoelectric conversion efficiency of the solar cell by approximately 0.05%, and the bifacial coefficient of the solar cell by approximately 7.7%.

[0051] 1 and 3 , in some embodiments, the direction from the doped conductive layer 103 toward the dielectric layer 104 is defined as a third direction Z, a plane perpendicular to the third direction Z is defined as a projection plane, and the orthogonal projection of the doped conductive layer 103 on the projection plane is located at the orthogonal projection of the dielectric layer 104 on the projection plane. In this way, whether it is the electrode region 101 provided with the doped conductive layer 103 or a part of the non-electrode region 102 provided with the doped conductive layer 103, the dielectric layer 104 is provided between the electrode region 101 and the non-electrode region 102 and the doped conductive layer 103. This ensures that the dielectric layer 104 corresponding to the doped conductive layer 103 is designed in any region having the doped conductive layer 103 so as to form a passivation contact structure. In other words, in the case of a first surface 100a having a doped conductive layer 103 provided thereon, whether it is an electrode region 101 or a non-electrode region 102, a dielectric layer 104 is provided between that portion of the first surface 100a and the doped conductive layer 103.

[0052] The thickness direction of the substrate 100 is the direction from the doped conductive layer 103 to the dielectric layer 104.

[0053] In some embodiments, referring to FIG. 4, the doped conductive layer 103 is provided in only some of the non-electrode regions 102 among the plurality of non-electrode regions 102 .

[0054] Note that FIG. 4 only shows two non-electrode regions 102 having a doped conductive layer 103 and one non-electrode region 102 not having a doped conductive layer 103. In one embodiment of the present disclosure, the number of non-electrode regions 102 having a doped conductive layer 103 and the number of non-electrode regions 102 not having a doped conductive layer 103 are not limited. This number can be flexibly adjusted according to specific needs in actual applications. Furthermore, FIG. 4 is merely an example of the arrangement of the non-electrode regions 102 having a doped conductive layer 103 and the non-electrode regions 102 not having a doped conductive layer 103. In one embodiment of the present disclosure, the arrangement of the non-electrode regions 102 having a doped conductive layer 103 and the non-electrode regions 102 not having a doped conductive layer 103 is not limited. This number can be flexibly adjusted according to specific needs in actual applications.

[0055] In some embodiments, referring to FIG. 1 , 3 or 4 , the doped conductive layer 103 may further include a plurality of first conductive portions 113 arranged at intervals along a first direction X, the plurality of first conductive portions 113 corresponding to the electrode regions 101 and located in the corresponding electrode regions 101, and extending along a second direction Y intersecting the first direction X; and at least one second conductive portion 123 located in the non-electrode region 102, the first conductive portions 113 of two electrode regions 101 adjacent to the non-electrode region 102 in which the second conductive portion 123 is provided, both in contact with and connected to the second conductive portion 123.

[0056] In addition, the doped conductive layers 103 located in one non-electrode region 102 are considered as a whole to be the second conductive portion 123, regardless of whether they are in contact with each other and connected or spaced apart from each other, and the specific structure of the second conductive portion 123 located in the non-electrode region 102 will be described in detail later.

[0057] In other words, in the case of two adjacent first conductive portions 113 along the first direction X, a second conductive portion 123 can be provided within the space between the two first conductive portions 113, and the second conductive portion 123 can be in contact with and connected to the two adjacent first conductive portions 113. This advantageously allows photogenerated carriers in the non-electrode region 102 to be first collected via the second conductive portion 123, then transported to the first conductive portion 113 via the second conductive portion 123 that is in contact with and connected to the first conductive portion 113, and further transported to the electrode via the first conductive portion 113. Therefore, the second conductive portion 123 is advantageous in improving the collection efficiency of photogenerated carriers on the first surface 100a by the electrode.

[0058] 4, in some cases, the second conductive portion 123 is not provided in any of the non-electrode regions 102, and the second conductive portion 123 is not provided in any of the spaces between any two adjacent first conductive portions 113. In actual applications, the non-electrode regions 102 in which the second conductive portion 123 needs to be provided and the number of second conductive portions 123 provided in the non-electrode regions 102 can be flexibly selected according to specific needs.

[0059] In some embodiments, referring to FIG. 4, the second conductive portions 123 are located in the non-electrode regions 102, but not all of the non-electrode regions 102 are provided with the second conductive portions 123.

[0060] 3 , in some other embodiments, the second conductive portion 123 corresponds to the non-electrode region 102. In other words, the second conductive portion 123 is provided in each of the non-electrode regions 102. In this manner, each of the non-electrode regions 102 has a passivating dielectric layer 104 and a second conductive portion 123, which not only reduces the probability of recombination of photo-generated carriers in each of the non-electrode regions 102 but also advantageously allows the photo-generated carriers in each of the non-electrode regions 102 to be collected by the corresponding second conductive portion 123 and further transported to the nearest first conductive portion 113.

[0061] 3 to 5, in some embodiments, Fig. 5 is a schematic diagram of a third type of local top view structure of a solar cell according to an embodiment of the present disclosure. The second conductive portion 123 may include a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the plurality of first elongated structures 133 extending along the first direction X to contact and connect to adjacent first conductive portions 113.

[0062] In this way, both ends of the first elongated structure 133 in the first direction X are respectively in contact with and connected to two adjacent first conductive portions 113, so that the photogenerated carriers in a portion of the non-electrode region 102 can be directly transported to the first conductive portions 113 along the first direction X by the first elongated structure 133, which is ultimately advantageous in improving the collection efficiency of the photogenerated carriers on the first surface 100a by the electrode.

[0063] 4 or 5, the second conductive portion 123 may include only a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the plurality of first elongated structures 133 extending along the first direction X so as to contact and connect to adjacent first conductive portions 113. In some cases, with reference to FIG. 4, only some of the non-electrode regions 102 may have the first elongated structures 133, i.e., only some of the non-electrode regions 102 may have the doped conductive layer 103. In other cases, with reference to FIG. 5, all of the non-electrode regions 102 may have the first elongated structures 133, i.e., the second conductive portion 123 corresponds to the non-electrode region 102.

[0064] 4 or 5, the second conductive portion 123 includes only a plurality of first elongated structures 133 arranged at intervals along the second direction Y, and the first elongated structures 133 are the second conductive portion 123.

[0065] 4 and 5 only show that the second conductive portion 123 located in the non-electrode region 102 includes four first elongated structures 133. An embodiment of the present disclosure does not limit the number of first elongated structures 133 included in any second conductive portion 123. For example, the number of first elongated structures 133 included in the second conductive portion 123 may be 1, 2, 3, or 5. Furthermore, FIGS. 4 and 5 only show an example in which the number of first elongated structures 133 included in different second conductive portions 123 located in different non-electrode regions 102 is the same. In actual application, the number of first elongated structures 133 included in different second conductive portions 123 located in different non-electrode regions 102 may be different and can be adjusted according to specific needs.

[0066] In some examples, based on the second conductive portion 123 including only a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the spacing between adjacent first elongated structures 133 in the second direction Y may be 5 μm to 200 μm.

[0067] The size of the gap between adjacent first elongated structures 133 will affect the density of the arrangement of the plurality of first elongated structures 133. In practical application, the gap between adjacent first elongated structures 133 can be flexibly adjusted based on the requirement for the density of the arrangement of the first elongated structures 133. Furthermore, the gap between two different adjacent first elongated structures 133 may be the same or different. For example, three adjacent first elongated structures 133 along the second direction Y have two gaps in the second direction Y, and the size of the two gaps may be the same or different.

[0068] In some other cases, referring to Fig. 3 or Fig. 6, Fig. 6 is a schematic diagram of a fourth type of local top structure of a solar cell according to an embodiment of the present disclosure. Based on the second conductive portion 123 including a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the second conductive portion 123 may further include at least one second elongated structure 143 extending along the second direction Y.

[0069] 3 or 6, the plurality of first elongated structures 133 and at least one second elongated structure 143 located in the same non-electrode region 102 jointly form the second conductive portion 123.

[0070] In some examples, referring to FIG. 6, based on the second conductive portion 123 including a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the second conductive portion 123 may include only one second elongated structure 143 extending along the second direction Y.

[0071] In this way, based on the fact that both ends of the first elongated structure 133 in the first direction X are respectively in contact with and connected to the two adjacent first conductive portions 113, the second elongated structure 143 can also collect photo-generated carriers in the non-electrode region 102 along the second direction Y. On the one hand, the first elongated structure 133 can directly transport photo-generated carriers in a partial region of the non-electrode region 102 to the first conductive portion 113 along the first direction X. On the other hand, the first elongated structure 133 can collect carriers in the second elongated structure 143 and further transport them to the first conductive portion 113 along the first direction X, which is ultimately advantageous to improving the collection efficiency of photo-generated carriers at the first surface 100 a by the electrode.

[0072] 3 , based on the second conductive portion 123 including a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the second conductive portion 123 may include a plurality of second elongated structures 143 arranged at intervals along the first direction X and intersecting with the plurality of first elongated structures 133 to form a lattice structure 153. Note that the number of the plurality of second elongated structures 143 arranged at intervals along the first direction X is two or more.

[0073] In addition, along the second direction Y, the plurality of first elongated structures 133 can collect photo-generated carriers in different regions of the non-electrode region 102. Based on this, by designing the plurality of second elongated structures 143 intersecting the plurality of first elongated structures 133 to form a lattice-like structure 153, it is possible to provide the photo-generated carriers in the non-electrode region 102 with multiple transport paths to transport them to the first conductive portion 113, and the plurality of second elongated structures 143 can also collect photo-generated carriers in different regions of the non-electrode region 102, respectively. This further improves the collection efficiency of photo-generated carriers in the entire non-electrode region 102 by the lattice-like structure 153, thereby further improving the collection efficiency of photo-generated carriers by the doped conductive layer 103 at the first surface 100a, which is ultimately advantageous to improving the collection efficiency of photo-generated carriers at the first surface 100a by the electrode.

[0074] 3 only shows that the second conductive portion 123 located in a certain non-electrode region 102 includes two second elongated structures 143. An embodiment of the present disclosure does not limit the number of second elongated structures 143 included in any second conductive portion 123, and the number of second elongated structures 143 included in the second conductive portion 123 may be 3, 4, 5, etc. Furthermore, the number of second elongated structures 143 included in different second conductive portions 123 located in different non-electrode regions 102 may be the same or different and can be adjusted according to specific needs.

[0075] 3 or 6, in an embodiment having a first conductive portion 113, a first elongated structure 133, and a second elongated structure 143, the first elongated structure 133 has a first width W1 along the second direction Y. The second elongated structure 143 has a second width W2 along the first direction X. The first conductive portion 113 has a third width W3 along the first direction X, where the third width W3 is greater than the first width W1 and greater than the second width W2.

[0076] It should be noted that it is not appropriate to design the first width W1 of the first elongated structure 133 and the second width W2 of the second elongated structure 143 to be too large because the first elongated structure 133 and the second elongated structure 143 are both mainly used to collect photo-generated carriers in different regions of the non-electrode region 102 and cannot cover too much of the non-electrode region 102, which would prevent too much of the non-electrode region 102 from being blocked and unable to absorb much light. In contrast, the first conductive portion 113 not only needs to further collect the photo-generated carriers collected in the first elongated structure 133 and the second elongated structure 143, but also needs to contact the electrode so that the photo-generated carriers are finally transported to the electrode. Therefore, the first conductive portion 113 needs to be designed to have strong photo-generated carrier collecting ability and low contact resistance with the electrode.

[0077] Based on this, by designing the third width W3 to be larger than the first width W1 and larger than the second width W2, the volume of the first conductive portion 113 can be made larger than the volume of the first elongated structure 133 and larger than the volume of the second elongated structure 143. On the one hand, it is advantageous that the first elongated structure 133 and the second elongated structure 143 collect photo-generated carriers in different regions of the non-electrode region 102, and at the same time, it is advantageous to ensure that the non-electrode region 102 can receive more incident light so that the non-electrode region 102 has a high light absorption rate. On the other hand, it is advantageous to improve the first conductive portion 113's good collection efficiency of photo-generated carriers in the first elongated structure 133 and the second elongated structure 143, and to improve the contact area between the first conductive portion 113 and the electrodes, thereby advantageous to reduce the contact resistance between the first conductive portion 113 and the electrodes. In this way, the two aspects work together to improve the light absorption rate by the first surface 100a and the passivation effect of the passivation contact structure for the first surface 100a, which is made up of the doped conductive layer 103 and the dielectric layer 104. This improves the collection of photogenerated carriers at the first surface 100a by the electrode, which is advantageous for improving the photoelectric conversion efficiency of the entire first surface 100a and therefore for improving the bifacial coefficient of the solar cell.

[0078] 3 to 6, the first widths W1 of the different first elongated structures 133 are the same as an example. In actual applications, the first widths W1 of the different first elongated structures 133 may be different and can be adjusted according to specific needs. In FIG. 3 or FIG. 6, the second widths W2 of the different second elongated structures 143 are the same as an example. In actual applications, the second widths W2 of the different second elongated structures 143 may be different and can be adjusted according to specific needs. In FIG. 1 to FIG. 6, the third widths W3 of the different first conductive portions 113 are the same as an example. In actual applications, the third widths W3 of the different first conductive portions 113 may be different and can be adjusted according to specific needs.

[0079] 3 to 6, in an embodiment having a first elongated structure 133, the first elongated structure 133 has a first width W1 along the second direction Y, and the first width W1 may be 5 μm to 100 μm, for example, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 95 μm, 95 μm, 100 μm, or 105 μm.

[0080] If the first width W1 is less than 5 μm, it is unfavorable for the first elongated structures 133 to efficiently collect photo-generated carriers in the non-electrode regions 102. If the first width W1 is greater than 100 μm, too much of the non-electrode regions 102 is covered by the first elongated structures 133, which is unfavorable for incident light to be irradiated onto the non-electrode regions 102, and therefore unfavorable for light absorption by the non-electrode regions 102. Based on this, designing the first width W1 to be 5 μm to 100 μm is advantageous in ensuring that the first elongated structures 133 have high light collection efficiency of photo-generated carriers in the non-electrode regions 102, while at the same time ensuring that most of the non-electrode regions 102 are not covered by the first elongated structures 133, thereby ensuring high light absorption by the non-electrode regions 102.

[0081] 3 or 6, in an embodiment having the second elongated structures 143, the second elongated structures 143 have a second width W2 along the first direction X, and the second width W2 may be 5 μm to 100 μm, for example, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 90 μm, 95 μm, 100 μm, or 105 μm.

[0082] The technical effect achieved by designing the second width W2 to 5 μm to 100 μm is similar to the technical effect achieved by designing the first width W1 to 5 μm to 100 μm, and will not be described in detail here.

[0083] 1 to 6, in an embodiment having a first conductive portion 113, the first conductive portion 113 has a third width W3 along the first direction X, and the third width W3 may be 50 μm to 500 μm, for example, 60 μm, 80 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, or 450 μm.

[0084] If the third width W3 is less than 50 μm, the contact area between the first conductive portion 113 and the electrode becomes small, the contact resistance between them becomes large, and the loss of photogenerated carriers when transported from the first conductive portion 113 to the electrode becomes large, which is unfavorable for the first conductive portion 113 to collect the photogenerated carriers in the second conductive portion 123. If the third width W3 is greater than 500 μm, too much of the first surface 100 a is covered by the first conductive portion 113. In other words, the proportion of the electrode region 101 in the first surface 100 a is too large, which is unfavorable for the irradiation of incident light onto the first surface 100 a and is unfavorable for the absorption of light by the first surface 100 a. Based on this, by designing the third width W3 to be 50 μm to 500 μm, it is ensured that the first conductive portion 113 has a high light collection efficiency of photo-generated carriers in the second conductive portion 123, while at the same time increasing the contact area between the first conductive portion 113 and the electrode, thereby reducing the contact resistance between the first conductive portion 113 and the electrode, and increasing the proportion of the non-electrode region 102 on the first surface 100a, thereby ensuring a high light absorption rate by the entire first surface 100a.

[0085] 3, in some embodiments, the lattice structure 153 has a plurality of mesh holes 163 defined by the first elongated structures 133 and the second elongated structures 143. A first dimension D1 of the mesh holes 163 in the first direction X may be 100 μm or less, and a second dimension D2 of the mesh holes 163 in the second direction Y may be 5 μm to 200 μm.

[0086] The mesh holes 163 are regions on the first surface 100a that mainly absorb light. The first elongated structures 133 and the second elongated structures 143 divide the exposed non-electrode region 102 into a plurality of mesh holes 163, and the first dimension D1 of each mesh hole 163 is 100 μm or less and the second dimension D2 is 5 μm to 200 μm. This advantageously allows photogenerated carriers in each mesh hole 163 to be collected by the corresponding adjacent first elongated structure 133 and / or second elongated structure 143, thereby improving the ability of the second conductive portion 123 to collect photogenerated carriers in any mesh hole 163, thereby improving the collection efficiency of photogenerated carriers on the first surface 100a by the electrode.

[0087] Some of the mesh holes 163 are surrounded by both the first elongated structure 133 and the second elongated structure 143, while other mesh holes 163 are surrounded by the first elongated structure 133, the second elongated structure 143, and the first conductive portion 113. The first dimension D1 of different mesh holes 163 arranged along the first direction X may be the same or different. The second dimension D2 of different mesh holes 163 arranged along the second direction Y may be the same or different, and either dimension can be adjusted according to actual needs.

[0088] In some embodiments, referring to Figures 1 and 2, the direction from the doped conductive layer 103 to the dielectric layer 104 is defined as the third direction Z, a plane perpendicular to the third direction Z is defined as the projection plane, the orthogonal projection area of ​​the doped conductive layer 103 located in a partial region of the non-electrode region 102 on the projection plane is defined as the first area, the orthogonal projection area of ​​the first surface 100a on the projection plane is defined as the second area, and the ratio of the first area to the second area can be 5% to 30%.

[0089] If the ratio of the first area to the second area is less than 5%, the area of ​​the non-electrode region 102 covered by the doped conductive layer 103 will be too small, which is unfavorable for the doped conductive layer 103 to efficiently collect photo-generated carriers in the non-electrode region 102. If the ratio of the first area to the second area is greater than 30%, the area of ​​the non-electrode region 102 covered by the doped conductive layer 103 will be too large, which is unfavorable for more incident light to be irradiated onto the non-electrode region 102, which is unfavorable for light absorption by the non-electrode region 102. Therefore, by designing the ratio of the first area to the second area to be less than 5% to 30%, it is ensured that the doped conductive layer 103 has high light collection efficiency of photo-generated carriers in the non-electrode region 102, while at the same time ensuring that most of the non-electrode region 102 is not covered by the doped conductive layer 103, thereby ensuring high light absorption by the non-electrode region 102.

[0090] 1 and 7, in some embodiments, Figure 7 is an enlarged cross-sectional structural schematic diagram of box II in Figure 1. The substrate 100 further has a second surface 100b disposed opposite to the first surface 100a. The second surface 100b has a third surface structure 150 including a plurality of second pyramid structures 160.

[0091] Furthermore, the second pyramid structure 160 is advantageous in that it increases the probability that light incident on the second surface 100b at different angles will be reflected by the second pyramid structure 160 and absorbed by the second surface 100b, thereby further improving the high light absorption rate by the remaining second surface 100b, and therefore improving the photoelectric conversion efficiency of the entire second surface 100b.

[0092] In some embodiments, referring to FIGS. 2 and 7 together, the first pyramidal structure 140 has a base dimension L1 that is smaller than the base dimension L2 of the second pyramidal structure 160.

[0093] The first pyramid structure 140 is a surface morphology of a portion of the first surface 100a. On the one hand, the first pyramid structure 140 improves the light absorption rate of the first surface 100a. On the other hand, it is necessary to consider the influence of the first pyramid structure 140 on the passivation effect of the dielectric layer 104 and the doped conductive layer 103 located on the first surface 100a. Based on this, designing the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 to be smaller than the one-dimensional dimension L2 at the bottom of the second pyramid structure 160 is advantageous in ensuring high light absorption rate at the first surface 100a and at the same time ensuring good passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the first surface 100a.

[0094] In some embodiments, the size of the first pyramidal structure 140 at its base in the first dimension L1 may be between 0.5 μm and 5 μm, such as 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, or 4.5 μm. The maximum height of the first pyramidal structure 140 along the third direction Z is between 0.5 μm and 3 μm, such as 1 μm, 1.5 μm, 2 μm, or 2.5 μm.

[0095] In some embodiments, the size of the first dimension L2 at the base of the second pyramid structure 160 may be 2 μm to 5 μm, such as 2.5 μm, 3 μm, 3.5 μm, 4 μm, or 4.5 μm, etc. The maximum height of the second pyramid structure 160 along the third direction Z is 1 μm to 3 μm, such as 1.5 μm, 2 μm, or 2.5 μm.

[0096] 8, which is a schematic diagram of a top view of the bottom of a first pyramidal structure in a solar cell according to an embodiment of the present disclosure. The one-dimensional dimension L1 of the bottom of the first pyramidal structure 140 includes any one of the length, width, and diagonal length of the orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100. Also, in FIG. 8, the orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100 is taken as an example to be a regular rectangle. In this case, the one-dimensional dimension L1 of the bottom of the first pyramidal structure 140 is any one of the length, width, and diagonal length of the regular rectangle.

[0097] In practical applications, the orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100 may be an irregular polygon. In this case, the length, width, or diagonal length of the orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100 is not absolute, but is artificially defined to characterize the one-dimensional dimension L1 at the bottom of the first pyramidal structure 140. For example, refer to FIG. 9, which is another top view structural schematic diagram of the bottom of the first pyramidal structure in a solar cell according to one embodiment of the present disclosure. The orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100 is an irregular rectangle. In this case, the length L11 of the orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100 can be defined as the length of the longest side of the irregular rectangle, the width L12 of the orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100 can be defined as the length of the shortest side of the irregular rectangle, and the diagonal length L13 of the orthogonal projection pattern of the bottom of the first pyramidal structure 140 on the substrate 100 can be defined as the length of the longest diagonal side of the irregular rectangle. Note that the above is merely an example, and in practice, the lengths can be flexibly defined according to actual needs.

[0098] Furthermore, the orthogonal projection pattern of the base of the first pyramidal structure 140 on the substrate 100 may be an irregular polygon, a circle, or an irregular shape approximating a circle, in addition to an irregular rectangle. In this case, the one-dimensional dimension L1 at the base of the first pyramidal structure 140 is selected from a plurality of different specific areas at the base of the first pyramidal structure 140. The specific areas can be flexibly defined according to actual needs, and then the average value of the length, width, diagonal, or diameter of the plurality of different specific areas is calculated.

[0099] The definition of the one-dimensional dimension L2 at the base of the second pyramid structure 160 is similar to the definition of the one-dimensional dimension L1 at the base of the first pyramid structure 140, and will not be described in detail here. Also, the one-dimensional dimension L1 at the base of different first pyramid structures 140 may be different or the same, but the one-dimensional dimension L1 at the base of the first pyramid structure 140 is within a single numerical range. The one-dimensional dimension L2 at the base of different second pyramid structures 160 may be different or the same, but the one-dimensional dimension L2 at the base of the second pyramid structure 160 is also within a single numerical range.

[0100] In some embodiments, referring to FIG. 2, the first dimension L3 at the bottom of the platform structure 130 may be between 5 μm and 20 μm, such as 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, or 19 μm.

[0101] The definition of the one-dimensional dimension L3 at the bottom of the platform structure 130 is similar to the definition of the one-dimensional dimension L1 at the bottom of the first pyramid structure 140, and will not be described in detail here. The one-dimensional dimension L3 at the bottom of different platform structures 130 may be different or the same, but the one-dimensional dimension L3 at the bottom of the platform structure 130 is within a single numerical range.

[0102] In some embodiments, the thickness of the doped conductive layer 103 along the third direction Z may be between 50 nm and 200 nm.

[0103] 10, which is a schematic diagram of another local cross-sectional structure of a solar cell according to an embodiment of the present disclosure. The solar cell may further include a first electrode 107 in electrical contact with the doped conductive layer 103.

[0104] In some embodiments, referring to FIG. 10 , the solar cell may further include a first passivation layer 105 covering the first surface 100a on which the dielectric layer 104 and the doped conductive layer 103 are formed, and a first electrode 107 penetrating the first passivation layer 105 and electrically contacting the doped conductive layer 103.

[0105] In some embodiments, the first passivation layer 105 may have a single layer structure or a multilayer structure, and the material of the first passivation layer 105 may be at least one of materials such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, titanium oxide, hafnium oxide, or alumina.

[0106] 10 , in some examples, the first passivation layer 105 includes a first sub-passivation layer and a second sub-passivation layer that are sequentially stacked along the third direction Z. Here, the material of the first sub-passivation layer may be alumina, and the material of the second sub-passivation layer may be at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0107] In some embodiments, the thickness of the first sub-passivation layer in the third direction Z may be between 5 nm and 10 nm.

[0108] 10, in some embodiments, the substrate 100 further includes a second surface 100b disposed opposite the first surface 100a. The solar cell may further include a second electrode 117 electrically connected to the second surface 100b.

[0109] In some embodiments, and still referring to FIG. 10 , the solar cell may further include a second passivation layer 115 located on the second surface 100b and a second electrode 117 extending through the second passivation layer 115 and electrically contacting the second surface 100b.

[0110] It should be noted that the film layer structure and material composition of the second passivation layer 115 are similar to those of the first passivation layer 105, and will not be described in detail here.

[0111] 1 to 6 and 10, the first conductive portion 113 and the second conductive portion 123 are depicted with different filling patterns to distinguish them from each other. In actual applications, the first conductive portion 113 and the second conductive portion 123 may be formed synchronously. 3, 6 and 10, the first elongated structure 133 and the second elongated structure 143 are depicted with different filling patterns to distinguish them from each other. In actual applications, the first elongated structure 133 and the second elongated structure 143 both belong to the second conductive portion 123, i.e., the first elongated structure 133 and the second elongated structure 143 may also be formed synchronously.

[0112] In summary, because the dielectric layer 104 and the doped conductive layer 103 are provided not only in the electrode region 101 but also in a portion of the non-electrode region 102, the dielectric layer 104 and the doped conductive layer 103 have a passivation effect on both the electrode region 101 and the non-electrode region 102, which is advantageous for reducing carrier recombination on the first surface 100a. In addition, the first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, which is advantageous for improving the uniformity of the dielectric layer 104 and the doped conductive layer 103 formed on that portion of the surface, thereby further improving the passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the first surface 100a and further reducing the defect density on the first surface 100a. The first surface 100a not facing the doped conductive layer 103 has the second surface structure 120 including a plurality of first pyramid structures 140. This increases the probability that light incident on the remaining first surface 100a at different angles will be reflected by the first pyramid structures 140 and absorbed by the remaining first surface 100a, thereby advantageously further improving the high light absorption rate of the remaining first surface 100a. In this way, the cooperation of each aspect is advantageous to improving the photoelectric conversion efficiency of the entire first surface 100a, and thereby advantageous to improving the bifacial coefficient of the solar cell.

[0113] Another embodiment of the present disclosure further provides a stacked battery including the solar cell according to the embodiment. The stacked battery according to the another embodiment of the present disclosure will be described in detail below with reference to the drawings. Note that parts that are the same as or correspond to those in the embodiment will not be described in detail here.

[0114] FIG. 11 is a schematic diagram of a local cross-sectional structure of a stacked battery according to another embodiment of the present disclosure.

[0115] 1 and 11, the stacked cell 106 includes a bottom cell 116, which is the solar cell according to the above embodiment, and a top cell 126 located on one side of the doped conductive layer 103 of the bottom cell 116, spaced apart from the substrate 100.

[0116] 1, 10, and 11, the substrate 100 further includes a second surface 100b disposed opposite the first surface 100a, and a top cell 126 is located on one side of the first surface 100a, spaced from the second surface 100b.

[0117] 1 and 11 , the bottom cell 116 may include only a substrate 100 having a first surface 100a, and a dielectric layer 104 and a doped conductive layer 103 sequentially stacked on the first surface 100a. Based on this, the first surface 100a not covered by the dielectric layer 104 and the doped conductive layer 103, the dielectric layer 104, and the doped conductive layer 103 collectively form a surface, and the top cell 126 is located directly on the surface. In one example, the stacked cell may further include a composite layer located between the top cell 126 and the surface collectively formed by the first surface 100a not covered by the dielectric layer 104 and the doped conductive layer 103, the dielectric layer 104, and the doped conductive layer 103.

[0118] 10 and 11 , based on the bottom cell 116 including the substrate 100 having the first surface 100a, and the dielectric layer 104 and the doped conductive layer 103 sequentially stacked on the first surface 100a, the bottom cell 116 may further include a first passivation layer 105 covering the first surface 100a on which the dielectric layer 104 and the doped conductive layer 103 are formed, and a first electrode 107 located on a part of the surface of the first passivation layer 105 spaced apart from the substrate 100 so as to penetrate the first passivation layer 105 and be in electrical contact with the doped conductive layer 103. In other words, the top cell 126 is located on one side of the first passivation layer 105 spaced apart from the substrate 100 so as to cover the surface of the first passivation layer 105 and the surface of the first electrode 107.

[0119] In some embodiments, the top cell 126 may include a first transport layer, a perovskite substrate, a second transport layer, a transparent conductive layer, and an anti-reflective layer stacked together, where the first transport layer faces the bottom cell 116.

[0120] In some embodiments, the first transport layer can be one of an electron transport layer or a hole transport layer, and the second transport layer can be the other of an electron transport layer or a hole transport layer.

[0121] Another embodiment of the present disclosure further provides a solar cell manufacturing method for manufacturing the solar cell according to the embodiment. The solar cell manufacturing method according to the embodiment of the present disclosure will be described in detail below with reference to the drawings. Note that parts that are the same as or correspond to the above embodiment will not be described in detail here.

[0122] 12 to 18 are schematic diagrams of local cross-sectional structures corresponding to the steps in a method for manufacturing a solar cell according to still another embodiment of the present disclosure.

[0123] 12 to 18, a method for manufacturing a solar cell includes at least the following steps.

[0124] In S101, referring to FIG. 12, FIG. 12 is a schematic diagram of a local cross-sectional structure of an initial substrate in a method for manufacturing a solar cell according to yet another embodiment of the present disclosure, in which an initial substrate 170 having an initial first surface 170a including initial electrode regions 111 and initial non-electrode regions 112 alternately arranged along a first direction X is provided.

[0125] In some embodiments, referring to Figure 12, the initial substrate 170 further includes an initial second surface 170b disposed opposite the initial first surface 170a. Referring to Figure 12 and Figure 7 together, the manufacturing method may further include performing a second texturing process before subsequently forming the initial dielectric layer, such that the initial second surface 170b is transformed into a second surface 100b. The second surface 100b includes a third surface structure 150 including a plurality of second pyramid structures 160.

[0126] In some cases, after subsequently forming the first pyramid structure based on the initial first surface 170a, the first pyramid structure has a first dimension L1 at its base that is smaller than the first dimension L1 at its base of the second pyramid structure 160.

[0127] 12 and 13 , which is a schematic, locally enlarged cross-sectional view of the initial substrate 170 after a second texturing process has been performed in a method for manufacturing a solar cell according to another embodiment of the present disclosure. In the step of performing the second texturing process on the initial second surface 170b, the initial first surface 170a is further subjected to a second texturing process, so that the initial first surface 170a has an initial first surface structure 180 including a third pyramid structure 190.

[0128] Note that, because the second pyramid structure 160 and the third pyramid structure 190 are formed synchronously by the second texturing process, a one-dimensional dimension L2 at the bottom of the second pyramid structure 160 is similar to a one-dimensional dimension L4 at the bottom of the third pyramid structure 190. Furthermore, by forming the second pyramid structure 160 and the third pyramid structure 190 in the same process step, not only can the process flow be saved, but the third pyramid structure 190 also lays a foundation for later forming the first surface, such that the surface morphology of the electrode region includes a plurality of platform structures and the surface morphology of a portion of the non-electrode region includes a plurality of first pyramid structures.

[0129] The definition of the one-dimensional dimension L4 at the base of the third pyramid structure 190 is similar to that of the one-dimensional dimension at the base of the first pyramid structure according to the above embodiment, and will not be described in detail here. The one-dimensional dimension L4 at the base of different third pyramid structures 190 may be different or the same, but the one-dimensional dimension L4 at the base of the third pyramid structure 190 is within a single numerical range.

[0130] In some embodiments, the manufacturing method may further include the following steps after performing the second texturing process and before subsequently forming the initial dielectric layer:

[0131] An emitter is formed in a region of the initial substrate 170 adjacent to the second surface 100b, with the initial substrate 170 exposed from the top surface of the emitter and the top surface of the emitter overlapping the second surface 100b. The type of doping element in the emitter is different from the type of doping element in the initial substrate 170 so that a PN junction is ultimately formed with the substrate.

[0132] In some examples, the diffused sheet resistance of the emitter may be between 80 ohms / sq and 200 ohms / sq.

[0133] In some examples, the method of forming the emitter may include performing a first doping process on the second surface 100b to diffuse a doping element into a portion of the initial substrate 170 to form the emitter. In one example, the first doping process may be one of an ion implantation process or a source diffusion process.

[0134] In some cases, when the initial substrate 170 is an N-type substrate, a boron diffusion process can be performed on the second surface 100b. In other cases, when the initial substrate 170 is a P-type substrate, a phosphorus diffusion process can be performed on the second surface 100b.

[0135] In addition, in the step of performing a first doping process on the second surface 100b to form an emitter, boron diffusion processing can be used to easily form borosilicate glass on the surface of the initial substrate 170. The surface of the initial substrate 170 on which the borosilicate glass is formed includes, but is not limited to, the initial first surface 170a, the side surface of the initial substrate 170, and the second surface 100b. Therefore, it is necessary to remove the borosilicate glass located at least on the initial first surface 170a and the side surface of the initial substrate 170 using chain hydrofluoric acid.

[0136] Similarly, in the step of performing a phosphorus diffusion process on the second surface 100b to form an emitter, it is easy to form phosphosilicate glass on the surface of the initial substrate 170. It is also necessary to remove at least the phosphosilicate glass located on the initial first surface 170a and side surfaces of the initial substrate 170a.

[0137] 13 and 14 , Fig. 14 is a schematic diagram of a locally enlarged cross-sectional structure of an initial substrate after a polishing process is performed in a method for manufacturing a solar cell according to another embodiment of the present disclosure, after forming the third pyramid structure 190 and before forming the initial dielectric layer. The manufacturing method may further include a step of performing a polishing process on the initial first surface 170a to convert the third pyramid structure 190 into the platform structure 130.

[0138] In the polishing step, the third pyramid structure 190 is gradually etched from the top so as to ultimately form the platform structure 130. In some examples, the remaining base of the third pyramid structure 190 after the polishing process is the platform structure 130. The one-dimensional dimension of the bottom of the base of the third pyramid structure 190 after the polishing process is 5 μm to 20 μm. Furthermore, after the polishing process is completed, the surface morphology of both the initial electrode region 111 (see FIG. 12) and the initial non-electrode region 112 (see FIG. 12) includes the platform structure 130.

[0139] 12 and 15, Fig. 15 is a schematic diagram of a local cross-sectional structure in which an initial dielectric layer and an initial doped conductive layer are formed on an initial substrate in a method for manufacturing a solar cell according to yet another embodiment of the present disclosure, forming an initial dielectric layer 114 covering the initial first surface 170a. In S103, referring to Fig. 15, an initial doped conductive layer 173 is formed covering one surface of the initial dielectric layer 114 away from the initial substrate 170.

[0140] 15, in some embodiments, the step of forming the initially doped conductive layer 173 may further include forming a second doped conductive layer covering the second surface 100b (not shown). The type of doping element in the initially doped conductive layer 173 is the same as that of the second doped conductive layer. In other words, the initially doped conductive layer 173 and the second doped conductive layer are formed in the same process step.

[0141] In some embodiments, the formation of the initial doped conductive layer 173 and the second doped conductive layer may include the following steps.

[0142] A first deposition process is simultaneously performed on the second surface 100b and the initial first surface 170a after the texturing process to form a first amorphous silicon layer (not shown) on the surface of the initial dielectric layer 114 that is separated from the initial substrate 170 and a second amorphous silicon layer (not shown) on the second surface 100b. For example, the first amorphous silicon layer and the second amorphous silicon layer can be formed by plasma enhanced chemical vapor deposition.

[0143] A crystallization process is simultaneously performed on the first amorphous silicon layer and the second amorphous silicon layer to convert the first amorphous silicon layer into a first polycrystalline silicon layer (not shown) and convert the second amorphous silicon layer into a second polycrystalline silicon layer (not shown). In some embodiments, the crystallization process includes an annealing heat treatment of the first amorphous silicon layer and the second amorphous silicon layer.

[0144] After the first polycrystalline silicon layer and the second polycrystalline silicon layer are formed, a second doping process is performed on the first polycrystalline silicon layer and the second polycrystalline silicon layer, thereby converting the first polycrystalline silicon layer into an initially doped conductive layer 173 and converting the second polycrystalline silicon layer into a second doped conductive layer.

[0145] In some embodiments, the second doping process may be one of an ion implantation process or a source diffusion process.

[0146] In some embodiments, the element doped into the target in the first doping process is different from the element doped into the target in the second doping process.

[0147] In one example, the doping element used in the first doping process is boron, and the doping element used in the second doping process is phosphorus.

[0148] In one example, the doping element used in the second doping process is phosphorus. After the second doping process, phosphorus silicate glass is formed on both the initial doped conductive layer 173 and the second doped conductive layer, and both the second doped conductive layer and the phosphorus silicate glass will be removed in a subsequent step.

[0149] 15 and 16, Fig. 16 is a schematic diagram of a local cross-sectional structure of a structure after an initial doped conductive layer formed in a solar cell manufacturing method according to still another embodiment of the present disclosure is treated by a laser process. The initial doped conductive layer 173 located in a partial region of the initial non-electrode region 112 is treated by the laser process.

[0150] 16, the initially doped conductive layer 173 that has been treated by the laser process is denoted by 173b, and the initially doped conductive layer 173 that has not been treated by the laser process is denoted by 173a, and 173a and 173b are depicted with different fill patterns. In other words, the initially doped conductive layer 173 that has not been treated by the laser process can be regarded as the first doped conductive layer 173a, and the initially doped conductive layer 173 that has been treated by the laser process can be regarded as the second doped conductive layer 173b. Here, the initially doped conductive layer 173 that has not been treated by the laser process, i.e., the first doped conductive layer 173a, is subsequently retained as a doped conductive layer, and the initially doped conductive layer 173 that has been treated by the laser process, i.e., the second doped conductive layer 173b, is subsequently removed.

[0151] In some embodiments, the step of forming the initial doped conductive layer 173 further includes forming a second doped conductive layer covering the second surface 100b, and phosphorus silicate glass located in the initial doped conductive layer 173 and the second doped conductive layer. In the step of treating the initial doped conductive layer 173 located in a portion of the initial non-electrode region 112 by a laser process, the entire second doped conductive layer is treated by the laser process to change the material properties of the entire second doped conductive layer and the material properties of the initial doped conductive layer 173 treated by the laser process, thereby realizing that the material properties of the initial doped conductive layer 173 treated by the laser process are different from the material properties of the initial doped conductive layer 173 not treated by the laser process, which facilitates subsequent removal of the initial doped conductive layer 173 located in the initial non-electrode region 112 that was treated by the laser process.

[0152] 17, in some embodiments, the initial doped conductive layer 173 located in the initial non-electrode region 112 is divided into a plurality of laser active regions 183 arranged at intervals along the second direction Y. Note that, referring to both FIG. 17 and FIG. 5, the laser active regions 183 correspond to the intervals between adjacent first elongated structures 133 formed subsequently, thereby forming the second conductive portion 123 shown in FIG. 5.

[0153] 18, in some other embodiments, the plurality of laser action regions 183 are all arranged at intervals along the first direction X and the second direction Y, and the first direction X and the second direction Y intersect. Note that, referring to both FIG. 18 and FIG. 3, the laser action regions 183 correspond to the mesh holes 163 of the lattice structure 153 formed by subsequently forming the plurality of second elongated structures 143 and the plurality of first elongated structures 133 intersecting with each other, thereby forming the lattice structure 153 shown in FIG. 3 by the laser action regions 183.

[0154] Note that the above are merely two examples of finally forming the first conductive portion 113 and the second conductive portion 123. In actual applications, the second conductive portion 123 shown in FIGS. 4 and 6 can also be formed by designing the specific shape of the laser active region 183. FIG. 17 is a schematic local top view of a structure after an initially doped conductive layer formed in a method for manufacturing a solar cell according to yet another embodiment of the present disclosure has been treated by a laser process. FIG. 18 is another schematic local top view of a structure after an initially doped conductive layer formed in a method for manufacturing a solar cell according to yet another embodiment of the present disclosure has been treated by a laser process. In order to clearly show the initially doped conductive layer 173 treated by the laser process and the initially doped conductive layer 173 not treated by the laser process, in both FIGS. 17 and 18, 173b denotes the initially doped conductive layer 173 treated by the laser process, and 173a denotes the initially doped conductive layer 173 not treated by the laser process, and 173a and 173b are depicted with different filling shapes.

[0155] Then, the step of treating the initial doped conductive layer 173 located in a portion of the initial non-electrode region 112 by a laser process includes treating the initial doped conductive layer 173 located in the laser action region 183 by a laser process, and subsequently turning the remaining initial doped conductive layer 173 not treated by the laser process into a doped conductive layer.

[0156] In some embodiments, the laser employed in the laser process is a picosecond laser, and the wavelength of the laser may be between 300 nm and 1000 nm, such as 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, or 900 nm.

[0157] In some embodiments, the spot energy density of the laser employed in the laser process is 10 W / cm 2 ~106W / cm 2 , e.g., 103.5 W / cm 2 , 104W / cm 2 , 104.5W / cm 2 , 105W / cm 2 or 105.5 W / cm 2 etc. may also be used.

[0158] In some embodiments, the linewidth of the laser employed in the laser process may be between 80 μm and 1500 μm, such as 100 μm, 300 μm, 500 μm, 600 μm, 700 μm, 850 μm, 900 μm, 1000 μm, 1100 μm, 1200 μm, 1300 μm, or 1400 μm.

[0159] In S105, referring to Figures 16 and 1 together, an etching process is performed to remove the initial doped conductive layer 173 and the initial dielectric layer 114 treated by the laser process, and a substrate 100 having a first surface 100a is formed, and a first texturing process is performed on the exposed initial first surface 170a so that the remaining initial dielectric layer 114 located in the electrode region 101 and the non-electrode region 102 becomes the dielectric layer 104, and the remaining initial doped conductive layer 173 located in the electrode region 101 and the non-electrode region 102 becomes the doped conductive layer 103.

[0160] 16 and 2, in the step of removing the initial doped conductive layer 173 and the initial dielectric layer 114 facing it by the laser process, the exposed initial first surface 170a may also be slightly etched, and therefore, in the subsequent step of performing a first texturing process on the exposed initial first surface 170a, a first pyramid structure 140 having a smaller one-dimensional dimension at the bottom than the second pyramid structure 160 can be formed.

[0161] In some embodiments, in the step of forming the second doped conductive layer 173, a second doped conductive layer is further formed, and the entire second doped conductive layer is treated by a laser process. Based on this, in the step of removing the initial doped conductive layer 173 and the initial dielectric layer 114 treated by the laser process by an etching process, the second doped conductive layer and the phosphosilicate glass located on the initial doped conductive layer 173 and the second doped conductive layer are further removed.

[0162] In some embodiments, the process for removing the initial doped conductive layer 173 and the initial dielectric layer 114 treated by the laser process may be alkaline etching, where the etchant for alkaline etching may be a mixture of potassium hydroxide and a texturing additive.

[0163] Note that the initial electrode region 111 and the initial non-electrode region 112 after the first texturing process are the electrode region 101 and the non-electrode region 102, respectively. The first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, and the remaining first surface 100a has a second surface structure 120 including a plurality of first pyramid structures 140.

[0164] In some embodiments, referring to FIG. 10 , after forming the dielectric layer 104 and the doped conductive layer 103, the manufacturing method may further include the steps of forming a first passivation layer 105 covering the first surface 100a on which the dielectric layer 104 and the doped conductive layer 103 are formed, and forming a second passivation layer 115 covering the second surface 100b.

[0165] In some cases, the deposition process may form the first passivation layer 105 and the second passivation layer 115 simultaneously.

[0166] In some examples, the first passivation layer 105 and the second passivation layer 115 may both have a laminated structure. For example, an alumina thin film may be grown simultaneously on the first surface 100 a and the second surface 100 b by an atomic layer deposition process, and then a combination layer of one or more of silicon oxide, silicon nitride, and silicon oxynitride may be deposited on the alumina thin film by a plasma enhanced chemical vapor deposition process.

[0167] In some embodiments, the manufacturing method may further include, after forming the dielectric layer 104 and the doped conductive layer 103, forming a first electrode 107 through the first passivation layer 105 and electrically contacting the doped conductive layer 103, and forming a second electrode 117 through the second passivation layer 115 and electrically contacting the second surface 100b, as shown in FIG. 10 .

[0168] In some cases, the first electrode 107 and the second electrode 117 may be formed by a screen printing process.

[0169] In some cases, the first electrode 107 and / or the second electrode 117 are sintered, and the sintering temperature may be between 700° C. and 800° C., such as 720° C., 750° C., 820° C., or 840° C. It is advantageous for the first electrode 107 to have good ohmic contact with the doped conductive layer 103, and for the second electrode 117 to have good ohmic contact with the second surface 100b.

[0170] In summary, another embodiment of the present disclosure involves treating the initial doped conductive layer 173 located in a portion of the initial non-electrode region 112 by a laser process, and then removing the initial doped conductive layer 173 and the initial dielectric layer 114 treated by the laser process by an etching process, thereby forming a substrate 100 having a first surface 100a, and performing a first texturing process on the exposed initial first surface 170a so that the remaining initial dielectric layer 114 located in the electrode region 101 and the non-electrode region 102 becomes the dielectric layer 104 and the remaining initial doped conductive layer 173 located in the electrode region 101 and the non-electrode region 102 becomes the doped conductive layer 103, thereby making the first surface 100a facing the doped conductive layer 103 have a first surface structure 110 including a plurality of platform structures 130, and the remaining first surface 100a have a second surface structure 120 including a plurality of first pyramid structures 140.

[0171] As described above, the dielectric layer 104 and the doped conductive layer 103 are provided on both the electrode region 101 and the non-electrode region 102. Therefore, the dielectric layer 104 and the doped conductive layer 103 have a passivation effect on both the electrode region 101 and the non-electrode region 102, which is advantageous for reducing carrier recombination on the first surface 100a. The first surface 100a facing the doped conductive layer 103 has a plurality of platform structures 130, which is advantageous for improving the uniformity of the dielectric layer 104 and the doped conductive layer 103 formed on the portion of the surface, which further improves the passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the first surface 100a. The first surface 100a not facing the doped conductive layer 103 has a plurality of first pyramid structures 140, which is advantageous for further improving the high light absorption rate of the remaining first surface 100a. In this way, the cooperation of each aspect is advantageous in improving the photoelectric conversion efficiency of the entire first surface 100a, and is therefore advantageous in improving the bifacial coefficient of the solar cell.

[0172] Yet another embodiment of the present disclosure further provides a solar cell module. The solar cell module includes a cell string formed by connecting a plurality of solar cells according to any one of the above embodiments, or a cell string formed by connecting a plurality of stacked cells according to the above embodiments. The solar cell module is used to convert received light energy into electrical energy. FIG. 19 is a schematic diagram of a local three-dimensional structure of a solar cell module according to yet another embodiment of the present disclosure. FIG. 20 is a schematic diagram of a cross-sectional structure of MM1 along the cross-sectional direction of FIG. 19. Note that for parts that are the same as or corresponding to the above embodiment, reference may be made to the corresponding descriptions of the above embodiment and will not be described in detail below.

[0173] 19 and 20, the solar cell module includes a battery string connected by a plurality of solar cells 40 according to the embodiment, connected by a plurality of stacked cells 106 (see FIG. 11) according to the embodiment, or connected by solar cells formed by the manufacturing method according to the embodiment, a sealing adhesive film 41 for covering the surface of the battery string, and a cover plate 42 for covering the surface of the sealing adhesive film 41 that is spaced apart from the battery string. The solar cells 40 are electrically connected as a whole or in the form of a plurality of slices to form a plurality of battery strings, and the plurality of battery strings are electrically connected in series and / or parallel.

[0174] 19 and 20, in some embodiments, multiple battery strings may be electrically connected by conductive bands 402. FIG. 20 only illustrates the positional relationship between solar cells, i.e., the arrangement direction of electrodes of the same polarity of the cells is the same, or the electrodes of the positive polarity of each cell are all arranged facing the same side, so that the conductive bands are connected to different sides of two adjacent cells. In some embodiments, the cells have electrodes of different polarities facing the same side, i.e., the electrodes of adjacent cells are arranged sequentially in the order of first polarity, second polarity, first polarity, and the conductive bands are connected to two adjacent cells on the same side.

[0175] In some embodiments, there is no space between the cells, i.e., the cells overlap each other.

[0176] In some embodiments, the sealing adhesive film 41 includes a first sealing layer and a second sealing layer. The first sealing layer covers one of the front and back surfaces of the solar cell 40, and the second sealing layer covers the other of the front and back surfaces of the solar cell 40. Specifically, at least one of the first sealing layer and the second sealing layer may be an organic sealing adhesive film such as a polyvinyl butyral (PVB) adhesive film, an ethylene-vinyl acetate copolymer (EVA) adhesive film, a polyolefin elastomer (POE) adhesive film, or a polyethylene terephthalate (PET) adhesive film.

[0177] In some cases, there is an additional boundary between the first and second encapsulating layers before lamination. In the solar cell module formed after lamination, the concepts of the first and second encapsulating layers are eliminated, i.e., the first and second encapsulating layers together form the encapsulating adhesive film 41.

[0178] In some embodiments, the cover plate 42 may be a light-transmitting cover plate such as a glass cover plate or a plastic cover plate. Specifically, the surface of the cover plate 42 facing the sealing adhesive film 41 may be textured, thereby improving the utilization rate of incident light. The cover plate 42 includes a first cover plate facing the first sealing layer and a second cover plate facing the second sealing layer.

[0179] In some embodiments, the solar cell includes, but is not limited to, any one of a PERC cell, a TOPCON cell, a HIT / HJT cell (Heterojunction Technology), a perovskite cell, or a stacked cell. A stacked cell includes, but is not limited to, a perovskite cell stacked with a crystalline silicon cell, a perovskite cell stacked with a perovskite cell, or a perovskite cell stacked with a thin film cell.

[0180] The solar cell may be a monocrystalline silicon solar cell, a polycrystalline silicon solar cell, an amorphous silicon solar cell, or a multi-component solar cell. Specifically, the multi-component solar cell may be a cadmium sulfide solar cell, a gallium arsenide solar cell, a copper indium selenide solar cell, or a perovskite solar cell. The solar cell may also be a whole cell or a slice cell. A slice cell refers to a cell formed into a complete whole cell by a cutting process.

[0181] 19, in some embodiments, in a battery string, solar cells 40 are arranged along a first direction X. In the battery string, the main grids of two adjacent solar cells 40 are arranged to intersect in a third direction Z. In the case of a solar cell module, by arranging the main grids of two adjacent solar cells 40 in the battery string to intersect in the third direction Z, different potentials of the solar cell module can be tested, thereby improving the reliability of the test results.

[0182] Those skilled in the art will understand that the above embodiments are specific examples for realizing the present application, and that various changes in form and details can be made in actual applications without departing from the spirit and scope of the present application. Since those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, the scope of protection of the present application should be based on the content limited by the claims.

Claims

1. a substrate having a first surface including electrode regions and non-electrode regions arranged alternately along a first direction; a doped conductive layer located on the first surface of the substrate, the doped conductive layer including a plurality of first conductive portions located on a respective one of the electrode regions; a dielectric layer located between the first surface and the doped conductive layer; the first surface has a first portion facing the doped conductive layer and a second portion not facing the doped conductive layer; the first portion includes a plurality of platform structures; the second portion includes a plurality of first pyramid structures; A solar cell characterized by:

2. the doped conductive layer further includes a second conductive portion; the second conductive portion is provided in only some of the non-electrode regions; The solar cell according to claim 1 .

3. the doped conductive layer further includes a second conductive portion located in a portion of the non-electrode region; the plurality of first conductive portions are arranged at intervals along the first direction and extend along a second direction intersecting the first direction; the first conductive portions located in the two electrode regions adjacent to the non-electrode region in which the second conductive portion is provided are both in contact with and connected to the second conductive portion; The solar cell according to claim 1 .

4. the second conductive portion corresponds to the non-electrode region; The solar cell according to claim 3 .

5. the second conductive portion includes a plurality of first elongated structures arranged at intervals along the second direction, the plurality of first elongated structures extending along the first direction so as to contact and be connected to adjacent first conductive portions; The solar cell according to claim 3 .

6. the second conductive portion further includes at least one second elongated structure extending along the second direction; The solar cell according to claim 5 .

7. the second conductive portion includes a plurality of second elongated structures arranged at intervals along the first direction and intersecting with a plurality of the first elongated structures to form a lattice structure; The solar cell according to claim 6 .

8. the first elongated structure has a first width along the second direction; the second elongated structure has a second width along the first direction; the first conductive portion has a third width along the first direction that is greater than the first width and greater than the second width; The solar cell according to claim 6 .

9. the lattice structure has a plurality of mesh holes defined by the first elongated structure and the second elongated structure; a first dimension of the mesh holes in the first direction is 100 μm or less; a second dimension of the mesh holes in the second direction is 5 μm to 200 μm; The solar cell according to claim 7 .

10. In a plan view, an area of ​​the doped conductive layer located in a partial region of the non-electrode region is defined as a first area, an area of ​​the first surface is defined as a second area, and a ratio of the first area to the second area is defined as 5% to 30%. The solar cell according to claim 1 .

11. the substrate further has a second surface disposed opposite to the first surface; the second surface has a third surface structure including a plurality of second pyramid structures; The solar cell according to claim 1 .

12. a first dimension at the base of the first pyramid structure is smaller than a first dimension at the base of the second pyramid structure; The solar cell according to claim 11 .

13. a bottom cell, which is the solar cell of claim 1; a top cell located on one side of the doped conductive layer of the bottom cell, spaced from the substrate; A stacked battery characterized by:

14. a battery string formed by connecting a plurality of solar cells according to any one of claims 1 to 12 or a battery string formed by connecting a plurality of stacked batteries according to claim 13; a sealing adhesive film for covering the surface of the battery string; a cover plate for covering a surface of the sealing adhesive film that is spaced apart from the battery string; A solar cell module characterized by:

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