Tuning device

Abstract

To provide a tuning device that can increase the applicability of frequencies that can be communicated by a communication device.SOLUTION: A tuning device is provided that uses a micro-actuator to tune the characteristics of an IC chip. The tuning device includes a dielectric member and driving unit, as the micro-actuator. The dielectric member is made of a dielectric, and the driving unit is configured to change the distance between the dielectric member and the IC chip.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a tuning device that uses a microactuator to tune the characteristics of an IC chip. [Background technology]

[0002] Coaxial connectors and cables are used as devices for transmitting and receiving radio waves, but because they have a large transmission loss of radio waves, they are mainly used at relatively low frequencies, and so communication devices (waveguide conversion devices) such as those described in Patent Document 1 are used. An IC chip (semiconductor chip) for transmitting and receiving high-frequency signals is mounted on the substrate (substrate member) of the waveguide conversion device, and signals (radio waves) are exchanged between the IC chip and the waveguide. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-261767 Summary of the Invention [Problem to be solved by the invention]

[0004] For example, some communication devices with waveguides have a back-short structure located on the extension of the waveguide. The back-short structure is provided with a reflecting surface for radio waves, and is configured to properly transmit the radio waves to the antenna section of the electrical circuit. Here, the transmission efficiency of radio waves and the frequency band in which radio waves can be transmitted and received can vary depending on the distance between the reflecting surface and the antenna section. There is a concern that if the frequency (wavelength) of the radio waves used in a communication device changes depending on the situation, it will become necessary to prepare a communication device with a different back-short structure corresponding to that frequency.

[0005] An object of the present invention is to provide a tuning device that can increase the applicability of frequencies that can be communicated by a communication device. [Means for solving the problem]

[0006] According to the present invention, there is provided a tuning device for tuning the characteristics of an IC chip using a microactuator, comprising a dielectric member as the microactuator and a driving unit, wherein the dielectric member is made of a dielectric, and the driving unit is configured to change the distance between the dielectric member and the IC chip.

[0007] According to the present invention, the drive unit is configured to change the distance between the dielectric member and the IC chip. Therefore, even if the frequency (wavelength) of the radio waves used in the communication device changes depending on the situation, the present invention can optimize the transmission efficiency of the radio waves and increase the applicability of frequencies that can be used for communication by the communication device by changing the distance. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 shows a functional block diagram of a waveguide conversion device 100 having a communication device 4 according to an embodiment. [Figure 2] Fig. 2A is an explanatory diagram schematically illustrating the configuration of the waveguide conversion device 100 shown in Fig. 1, including the waveguide 2, IC chip 3, communication device 4, and actuator 5. Fig. 2B is an explanatory diagram schematically illustrating an enlarged view of the IC chip 3, actuator 5, etc. In Fig. 2B, the direction Dr is the moving direction of the dielectric member 5A (the direction in which it moves when approaching the IC chip 3). [Figure 3] Figure 3A is a graph showing the change in transmission loss when the distance p between the IC chip 3 and the tip of the dielectric member 5A is changed to 0, 5, and 10 μm. Figure 3B is a graph showing the change in signal amplitude when the distance p between the IC chip 3 and the tip of the dielectric member 5A is changed to 0, 5, and 10 μm. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Various features shown in the following embodiments can be combined with each other. Furthermore, each feature can be an invention independently.

[0010] 1. Description of the configuration of the embodiment 1, the waveguide conversion device 100 includes an antenna 1, a waveguide 2, an IC chip 3, a communication device 4, an actuator 5 (an example of a microactuator), and a drive control unit (not shown). The actuator 5 according to the embodiment will be described as being provided in the IC chip 3 for high-frequency communication in the waveguide conversion device 100. Here, in the embodiment, the waveguide conversion device 100 includes a tuning device 10 that uses a microactuator to tune the characteristics of an IC chip 3. In the embodiment, the tuning device 10 includes, for example, an actuator 5 and a drive control unit (not shown) that controls the actuator 5. Furthermore, the tuning device 10 may be configured to include a part or the entire IC chip 3. In the embodiment, the IC chip 3, the communication device 4, the actuator 5, and the drive control unit are described as separate components (concepts), but the present invention is not limited to this. For example, the communication device 4 may include the IC chip 3, the actuator 5, and the drive control unit.

[0011] The waveguide transition device 100 is a high-frequency module configured to be capable of transmitting and receiving various radio waves. The waveguide transition device 100 according to this embodiment is a high-frequency module suitable for radar, sensors, and wireless communication systems that use high frequencies such as gigahertz waves and terahertz waves. The waveguide transition device 100 may function as either a transmitter or a receiver, or may have both the functions of a transmitter and a receiver.

[0012] Specific examples of radio wave frequencies (GHz) applicable to the waveguide conversion device 100 including the communication device 4 according to the embodiment include 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 210, 220, 230, 240, 250, 260, 270, 280, 290, 300, 310, 320, 330, 340, 350, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400, and 1500, and may be within a range between any two of the numerical values ​​exemplified here. The radio wave frequencies applicable to the waveguide conversion device 100 may be divided into multiple frequency ranges, such as frequencies from 100 GHz to 400 GHz and frequencies from 800 GHz to 1000 GHz, as defined by the numerical values ​​listed above.

[0013] 1-1. Antenna 1 The antenna 1 is a part that receives radio waves from outside the waveguide conversion device 100 during reception, and is a part that radiates radio waves to the outside from the waveguide conversion device 100 during transmission. The antenna 1 is electrically connected to the waveguide 2 so as to be able to exchange radio waves with it.

[0014] 1-2. Waveguide 2 The waveguide 2 is a transmission path for radio waves in the high frequency band, and is a hollow member that confines and transmits electromagnetic waves. The waveguide 2 can have a square configuration (a rectangular cross section in the longitudinal direction), but is not limited to this and may be a circular waveguide. The waveguide 2 is made of metal, and for example, a metal material such as copper can be used. In the embodiment, the transmission path of the waveguide 2 extends linearly, but is not limited to this and may be curved.

[0015] The end of the waveguide 2 is open, and an antenna unit 4A2 of the substrate member 4A (described later) and the like are disposed in the open portion. When receiving radio waves, the radio waves transmitted to the end side of the waveguide 2 are transmitted as a signal to the antenna unit 4A2. When transmitting radio waves, the signal of the antenna unit 4A2 is transmitted as a radio wave to the space within the waveguide 2.

[0016] 1-3.IC Chip 3 The IC chip 3 can be configured as a semiconductor IC chip mounted on the substrate member 4A. In the embodiment, the IC chip 3 has, for example, a CMOS circuit (Complementary Metal Oxide Semiconductor circuit). Note that the IC chip 3 is not limited to a CMOS circuit, and can also be applied to a SiGeBiCMOS circuit (Bipolar-CMOS circuit) or other compound semiconductor circuits. The IC chip 3 can be mounted on the substrate member 4A by, for example, wire bonding or flip chip mounting. The IC chip 3 is electrically connected to an antenna portion 4A2 of the substrate member 4A (described later) via, for example, a wiring portion 4Aw of the substrate member 4A.

[0017] An actuator 5, which will be described later, is provided on the IC chip 3. The IC chip 3 has passive elements (specifically, for example, a line, an inductor, a transformer, etc.), and the characteristics of the passive elements are adjusted by the dielectric member 5A, so that radio waves are appropriately propagated to the waveguide 2 of the waveguide conversion device 100.

[0018] 1-4.Communication Device 4 The communication device 4 is configured to perform electromagnetic communication between external radio waves and the IC chip 3. As shown in Fig. 2A, the communication device 4 includes a substrate member 4A, a metal member 4B, and a cavity portion 4D.

[0019] 1-4-1. Substrate member 4A 2A, the substrate member 4A includes a waveguide conversion circuit section 4A1, an antenna section 4A2, and an arrangement space section 4A3. The substrate member 4A may be configured as a printed circuit board (PCB) having a predetermined thickness, and has a front surface 4Af and a back surface 4Ab. The front surface 4Af is formed on the opposite side of the back surface 4Ab.

[0020] The waveguide conversion circuit section 4A1 is electrically connected to the antenna section 4A2 and the IC chip 3. The waveguide conversion circuit section 4A1 has a wiring section 4Aw that connects the antenna section 4A2 and the IC chip 3 electrically.

[0021] The antenna unit 4A2 has the function of transmitting or receiving radio waves. The antenna unit 4A2 is provided so as to face the arrangement space portion 4A3. In other words, the antenna unit 4A2 is arranged so as to protrude into the arrangement space portion 4A3. The antenna unit 4A2 is fixed to, for example, a substrate constituting the substrate member 4A.

[0022] The arrangement space 4A3 is a portion where the waveguide 2 is arranged on the front surface 4Af side of the substrate member 4A. A space 4A31 extending from the front surface 4Af to the back surface 4Ab of the substrate member 4A is also formed in the arrangement space 4A3. The space 4A31 can be configured as a hole formed in the substrate member 4A. The space 4A31 is a portion corresponding to a back-short hole in a so-called back-short structure. The antenna unit 4A2 is arranged in the space 4A31. Note that, although the embodiment has been described assuming that the space 4A31 is a hole, the present invention is not limited thereto and may be configured as a notch formed in the substrate member 4A.

[0023] 1-4-2. Metal member 4B The metal member 4B is disposed on the back surface 4Ab side of the substrate member 4A. The metal member 4B has the function of reflecting radio waves propagating through the waveguide 2. The metal member 4B is connected to the ground potential of the substrate member 4A. The metal member 4B may be made of various metal materials such as silver, copper, aluminum, and gold.

[0024] 1-4-3.Cavity part 4D The cavity portion 4D is disposed on the rear surface 4Ab side of the substrate member 4A. The cavity portion 4D is provided so as to cover the space formed from the rear surface 4Ab side of the substrate member 4A to the metal member 4B side. This forms a closed space on the rear surface 4Ab side of the substrate member 4A, which confines radio waves and suppresses transmission loss. The cavity portion 4D is made of metal, and for example, the same metal material (copper, etc.) as the waveguide 2 can be used. Note that the constituent material of the cavity portion 4D may be different from that of the waveguide 2.

[0025] 1-5. Actuator 5 The actuator 5 is disposed on the IC chip 3. The actuator 5 is disposed separately from the IC chip, but may be integrated with the IC chip. The actuator 5 is configured to adjust the characteristics of the passive elements in the IC chip 3 and enable appropriate propagation of radio waves within the waveguide 2. The actuator 5 is effective when the IC chip 3 is used to transmit a high-frequency signal to the waveguide 2, and can also be used when the IC chip 3 receives a signal from the waveguide 2.

[0026] As shown in FIG. 2B, the actuator 5 has a dielectric member 5A and a driving portion 5B. When a high-permittivity material approaches the ground portion (usually made of metal) on an IC chip, its characteristics can cause the wavelength of the transmission wave generated by the circuit within the IC chip to change. In the embodiment, this characteristic is utilized to replace the air gap area near the passive elements of the IC chip 3 with a high-permittivity material (dielectric member 5A), thereby achieving the effect of changing the signal wavelength.

[0027] 1-5-1. Dielectric member 5A The dielectric member 5A is made of a dielectric. The dielectric material constituting the dielectric member 5A can be, for example, sapphire, ceramic, or the like, but is not limited to these dielectric materials. The relative dielectric constant of the dielectric of the dielectric member 5A can be, for example, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10, 10.5, 11, 11.5, or 12, and may be within a range between any two of the values ​​exemplified here. For example, the relative dielectric constant of the dielectric of the dielectric member 5A is preferably 4 or more.

[0028] In one example of the embodiment, as shown in Fig. 2B, the dielectric member 5A is disposed in a hole Op formed in the substrate member 4A. The IC chip 3 is mounted on the substrate member 4A above the hole Op. As shown in Fig. 2B, for example, an air layer A is formed between the IC chip 3 and the substrate member 4A. When the dielectric member 5A is protruded by the driving unit 5B, at least a portion of the space where the air layer A is formed is replaced with the dielectric member 5A, which makes it possible to change the characteristics of the transmission signal in the IC chip 3.

[0029] In the embodiment, the dielectric member 5A is movable between a close state in which it is brought into contact with the IC chip 3 and a retracted state in which it is separated a predetermined distance from the IC chip 3. The retracted state can be defined as the state in which the dielectric member 5A is retracted (retracted) to the greatest extent from the IC chip 3. In the retracted state, the tip of the dielectric member 5A is separated by a distance x from, for example, the IC chip 3 (the lower surface that serves as the contact surface of the IC chip 3). Specifically, this distance x (μm) can be, for example, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 2, 29, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 200, 300, 400, 5000, 600, 700, 800, 900, 1000, 2000, 3000, 4000, 5000, and may be within a range between any two of the numerical values ​​exemplified here.

[0030] In addition, in the above description, it has been explained that the dielectric member 5A comes into contact with the IC chip 3 when the dielectric member 5A is in the proximity state, but this is not limiting. In the close proximity state, the distance y (μm) between the dielectric member 5A and the IC chip 3 can be, for example, 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 3, 4, 5, 6, 7, 8, 9, 10, 12, 14, 16, 18, 20, 22, 24, 26, 28, or 30 μm, or may be within a range between any two of the values ​​exemplified here. For example, the distance y is preferably 0 μm or more and 30 μm or less. Note that a state in which the distance y is 0 μm indicates contact with the contact surface of the IC chip 3. The distance y between the dielectric member 5A and the IC chip 3 described above is the distance when the IC chip 3 is operating. That is, it is preferable that the driving section 5B sets the distance y between the dielectric member 5A and the IC chip 3 to 0 μm or more and 30 μm or less when the IC chip 3 is in an operating state.

[0031] The dielectric member 5A may be formed in a columnar shape, for example. The cross-sectional area of ​​the dielectric member 5A in the direction perpendicular to the direction of relative movement of the dielectric member 5A and the IC chip 3 is, for example, 10,000 μm 2 ,20000μm 2 ,30000μm 2 ,40000μm 2 ,50000μm 2,60000μm 2 ,70000μm 2 ,80000μm 2 ,90000μm 2 ,100000μm 2 ,200000μm 2 ,300000μm 2 ,400000μm 2 ,500000μm 2 ,600000μm 2 ,700000μm 2 ,800000μm 2 ,900000μm 2 ,1000000μm 2 ,2mm 2 ,3mm 2 ,4mm 2 ,5mm 2 ,6mm 2 ,7mm 2 ,8mm 2 ,9mm 2 ,10mm 2 ,20mm 2 ,30mm 2 ,40mm 2 ,50mm 2 ,60mm 2 ,70mm 2 ,80mm 2 ,90mm 2 ,100mm 2 ,150mm 2 ,200mm 2 ,255mm 2 For example, the cross-sectional area of ​​the dielectric member 5A in the direction perpendicular to the direction of relative movement of the dielectric member 5A and the IC chip 3 can be 10,000 μm 2 Above, 255mm 2 The following is the result.

[0032] 1-5-2. Drive unit 5B The driving unit 5B is configured to change the distance between the dielectric member 5A and the IC chip 3. The driving unit 5B is configured to move the dielectric member 5A to change the distance between the dielectric member 5A and the IC chip 3. In one example of the embodiment, the dielectric member 5A and the driving unit 5B are integrally configured, and the driving unit 5B is configured to move the dielectric member 5A to change the distance between the dielectric member 5A and the transmitting / receiving circuit unit.

[0033] The driving unit 5B can move the dielectric member 5A within a predetermined minimum width. Here, the configuration of the driving unit 5B is not particularly limited, but it is preferable that the minimum width by which the driving unit 5B can be driven is small because the frequency of the radio waves applied to the waveguide conversion device 100 is high (gigahertz or terahertz) and the wavelength of the radio waves is short.

[0034] Specifically, this minimum width (μm) can be, for example, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 2, 29, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, or 100, or may be within a range between any two of the values ​​exemplified here. For example, this minimum width is 1 μm or more and 100 μm or less. The minimum width is not limited to the value described here. As will be described later in the section "1-6. Drive control section," the minimum width is preferably determined so as to reduce (cancel out) the deviation correspondence amount Δ when the dielectric member 5A moves.

[0035] The configuration of the driving unit 5B is not particularly limited as long as it can move the dielectric member 5A, and for example, a configuration including a piezoelectric element can be adopted. This makes it possible to move the dielectric member 5A in the vertical direction (the direction parallel to the direction from the actuator to the IC chip 3) on the order of microns by controlling the voltage supplied to the driving unit 5B.

[0036] 1-6. Drive control unit A drive control unit (not shown) has a function of controlling the drive unit 5B as a microactuator. A control device constituting the drive control unit may be mounted on the substrate member 4A, or may be mounted on a substrate other than the substrate member 4A as long as it can control the drive unit 5B.

[0037] Here, λ is defined as the wavelength of the radio waves propagating through the waveguide 2. Furthermore, d is defined as the sum of the thickness t of the substrate member 4A in the arrangement space portion 4A3 and the distance g between the back surface of the substrate member 4A and the metal member 4B. Note that the length d can also be defined as the length of the portion propagating as a radio wave in a back-short structure.

[0038] In the waveguide conversion device 100 described in the embodiment, it is preferable that the length d is equal to λ / 4, taking into consideration the transmission efficiency of radio waves, etc. However, it is expected that the frequency band used in the waveguide conversion device 100 may be changed, and in such a case, the length d may deviate from λ / 4, which is disadvantageous in terms of the transmission efficiency of radio waves, etc. Here, the magnitude of the deviation between the length d and λ / 4 (in one example of the embodiment, the deviation is the difference between the length d and λ / 4) is defined as the deviation correspondence amount Δ.

[0039] The actuator 5 described above has the function of adjusting the distance between the dielectric member 5A and the IC chip 3 to compensate for the misalignment amount Δ. In other words, by adjusting the distance between the dielectric member 5A and the IC chip 3, the actuator 5 can adjust the transmission signal of the IC chip 3 to offset the misalignment amount Δ. In other words, the driver 5B can move the dielectric member 5A by a predetermined minimum amount, and the minimum amount is determined so that the misalignment amount Δ can be reduced when the dielectric member 5A moves. Note that the misalignment amount Δ corresponds to the difference between λ / 4 and the length d of the portion propagated by radio waves in the back-short structure, where λ is the wavelength of the radio waves.

[0040] To give a simple example, when a 270 GHz signal is transmitted from the IC chip 3, λ / 4 is approximately 278 μm. For example, when the length d corresponds to 228 μm, the deviation correspondence amount Δ is 50 μm. The drive control unit controls the position of the dielectric member 5A so as to cancel out the misalignment amount Δ (50 μm in this example), and controls the drive unit 5B so that the length d substantially matches λ / 4. Note that the actuator 5 does not necessarily have to completely cancel out the misalignment amount Δ. For example, the drive control unit may control the dielectric member 5A so as to cancel out an amount between (misalignment amount Δ)×0.9 and (misalignment amount Δ)×1.1. In this way, even if there is a slight misalignment, the functions and effects of the embodiment (improved radio wave transmission efficiency and expanded frequency band in which radio waves can be transmitted and received) can be obtained.

[0041] In the embodiment, the actuator 5 has been described as including one dielectric member 5A, but this is not limiting, and the actuator 5 may include a plurality of dielectric members 5A. In this case, the distances between the IC chip 3 and the plurality of dielectric members 5A are changed by the driving unit 5B.

[0042] By providing a plurality of dielectric members 5A, it is possible to separate the dielectric members 5A into those that are to be brought into contact with the IC chip 3 in advance and those that are not. The number of dielectric members 5A that are to be brought into contact with the IC chip 3 may be changed (increased or decreased) as appropriate depending on the situation.

[0043] 2. Description of the functions and effects of the embodiment In technology related to waveguides used to transmit radio waves such as microwaves, the propagation mode in a coaxial line and the propagation mode in a waveguide are different, and therefore various waveguide transition devices, including the waveguide transition device 100 described in this embodiment, are used to appropriately convert the modes. Here, the communication device 4 according to the embodiment takes into consideration the characteristics in the 300 GHz band and the terahertz band (1000 GHz or higher) that are expected to be used in devices for Beyond 5G and 6G communications that will be required in the future, and can be flexibly adopted in a wide range of frequency bands and other radio wave environmental conditions, and has a configuration that improves applicability to the frequencies of radio waves used in communications.

[0044] Conventionally, for example, silicon-based (silicon substrate) waveguide conversion devices using MEMS technology (RF-MEMS) have been proposed, but they are not suitable for high frequency bands (for example, radio waves in the frequency band above 300 GHz or the terahertz band) due to the short wavelengths of the radio waves they handle. Furthermore, silicon substrates are not suitable for use in the terahertz band because they do not take into account the permittivity and dielectric properties. Furthermore, even if a waveguide conversion device with a fixed target frequency band can be prepared, if the corresponding frequency band fluctuates, multiple devices (multiple waveguide conversion devices) would be required, which is not economical. Specifically, in the case of a waveguide conversion device having a back-short structure as in the embodiment, the transmission efficiency of radio waves and the frequency band in which radio waves can be transmitted and received may vary depending on the distance between the reflecting surface and the antenna unit. As a result, if the frequency (wavelength) of the radio waves used in the communication device changes depending on the situation, it becomes necessary to prepare multiple communication devices dedicated to the frequency, and meeting such a demand may increase costs.

[0045] In contrast, in tuning device 10 according to the embodiment, driver 5B is configured to change the distance between IC chip 3 and dielectric member 5A, so that even if the frequency (wavelength) of the radio waves to be communicated changes depending on the situation, the distance can be changed to optimize the transmission efficiency of the radio waves and increase the applicability of frequencies that can be communicated between IC chip 3 and waveguide 2. This makes it easier to avoid the need to prepare multiple dedicated devices according to frequencies, and as a result, it is possible to suppress increases in costs.

[0046] With reference to FIGS. 3A and 3B, the attenuation characteristics depending on the signal frequency were evaluated when the actuator 5 was mounted on the IC chip 3, and the results will be briefly described below. The inventors confirmed that the transmission loss improved by decreasing the distance p to 10, 5, and 0 μm. They also confirmed that the amplitude of the signal in the IC chip 3 could be changed by changing the distance p to 0, 5, and 10 μm. In other words, the actuator 5 can tune the characteristics of the IC chip 3, making it possible to optimize the transmission efficiency of the radio wave and change the amplitude.

[0047] 3. Variations In the embodiment, the driving unit 5B as a microactuator is described as moving the dielectric member 5A, but the present invention is not limited to this. Although the substrate member 4A is larger than the dielectric member 5A, the driving unit 5B may move the substrate member 4A to change the distance between the IC chip 3 and the dielectric member 5A.

[0048] The actuator 5 according to the embodiment has been described as being provided in the IC chip 3 for high-frequency communication in the waveguide conversion device 100, but the present invention is not limited to this. The actuator 5 has a function of adjusting the wavelength and phase of a signal, and therefore can be applied to, for example, an IC chip that requires wavelength and phase adjustment for communication in a communication device other than the waveguide conversion device 100. The actuator 5 may also be applied to a circuit board of a device other than a communication device. The actuator 5 can also be applied to tuning electronic devices such as a phase shifter, an oscillator, and an amplifier.

[0049] Various embodiments are exemplified below, and the embodiments shown below can be combined with each other. [Appendix 1] A tuning device for tuning characteristics of an IC chip using a microactuator, comprising: a dielectric member and a driving unit as the microactuator, the dielectric member is made of a dielectric material, A tuning device, wherein the driver is configured to change the distance between the dielectric member and the IC chip. [Appendix 2] 2. The tuning device of claim 1, the dielectric member and the driving section are integrally configured, The driving unit is configured to move the dielectric member to change the distance between the dielectric member and the IC chip. [Appendix 3] 10. The tuning device of claim 2, the driving unit is capable of moving the dielectric member within a predetermined minimum width, A tuning device, wherein the minimum width is 1 μm or more and 100 μm or less. [Appendix 4] A tuning device according to any one of Supplementary Note 1 to Supplementary Note 3, A tuning device, wherein the driving unit sets the distance between the dielectric member and the IC chip to 0 μm or more and 30 μm or less when the IC chip is operating. [Appendix 5] A tuning device according to any one of Supplementary Note 1 to Supplementary Note 4, A tuning device, wherein the dielectric constant of the dielectric member is 4 or more. [Appendix 6] A tuning device according to any one of Supplementary Note 1 to Supplementary Note 5, The cross-sectional area of ​​the dielectric member in a direction perpendicular to the relative movement direction of the dielectric member and the IC chip is 10000 μm 2 Above, 255mm 2 Below is a tuning device. [Appendix 7] A tuning device according to any one of Supplementary Note 1 to Supplementary Note 6, a plurality of the dielectric members; A tuning device, wherein the distances between the plurality of dielectric members and the IC chip are changed by the driving unit. [Explanation of symbols]

[0050] 100: Waveguide conversion device 1: Antenna 2: Waveguide 3: IC chip 4: Communication equipment 4A: Substrate material 4A1: Waveguide conversion circuit section 4A2: Antenna section 4A3: Placement space 4A31: Space part 4Af: Front 4Ab: Back 4Aw: Wiring section 4B: Metallic parts 4D: Cavity 5: Actuator 5A: Dielectric material 5B: Drive unit 10: Tuning device A: Air layer Оp: Hole d: length t: thickness g:distance

Claims

1. A tuning device for tuning characteristics of an IC chip using a microactuator, comprising: a dielectric member and a driving unit as the microactuator, the dielectric member is made of a dielectric material, A tuning device, wherein the driver is configured to change the distance between the dielectric member and the IC chip.

2. 2. The tuning device of claim 1, the dielectric member and the driving section are integrally configured, The driving unit is configured to move the dielectric member to change the distance between the dielectric member and the IC chip.

3. 3. The tuning device according to claim 2, the driving unit is capable of moving the dielectric member within a predetermined minimum width, A tuning device, wherein the minimum width is 1 μm or more and 100 μm or less.

4. 3. The tuning device according to claim 1 or 2, A tuning device, wherein the driving unit sets the distance between the dielectric member and the IC chip to 0 μm or more and 30 μm or less when the IC chip is operating.

5. 3. The tuning device according to claim 1 or 2, A tuning device, wherein the dielectric constant of the dielectric member is 4 or more.

6. 3. The tuning device according to claim 1 or 2, The cross-sectional area of ​​the dielectric member in a direction perpendicular to the relative movement direction of the dielectric member and the IC chip is 10,000 μm ２ Above, 255mm ２ Below is a tuning device.

7. 3. The tuning device according to claim 1 or 2, a plurality of the dielectric members; A tuning device, wherein the distances between the plurality of dielectric members and the IC chip are changed by the driving unit.

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