Detection device

Abstract

To provide a detection device in which, if the input of pressure is cancelled, the detection by a detection electrode is rapidly set to a non-pressure state.SOLUTION: A detection device includes a first substrate having a first surface, and a sensor layer facing the first surface. The first substrate includes a detection electrode provided on the first surface, a common electrode disposed around the detection electrode, a transistor, a gate line, and a signal line covered with an organic insulating layer, a reference potential wire covered with the organic insulating layer, a first contact hole formed on the first surface and connecting the detection electrode to the other of the source electrode and the drain electrode of the transistor, a second contact hole formed on the first surface and connecting the reference potential wire and the common electrode, and a spacer provided between the first surface and the common electrode and making a part of the common electrode project to the sensor layer relative to the detection electrode. The sensor layer is supported by the common electrode and has a gap formed from the detection electrode.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] The detection device is a device for detecting pressure. The detection device has a common electrode, a detection electrode, and a sensor layer in contact with both the common electrode and the detection electrode. As shown in the following patent document, the sensor layer has a main body made of, for example, rubber and a plurality of conductive particles dispersed within the main body. When pressure is applied to the sensor layer, the main body collapses, causing the conductive particles to come into contact with each other. This reduces the resistance of the sensor layer, allowing current to flow from the common electrode to the detection electrode via the sensor layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-146489 Summary of the Invention [Problem to be solved by the invention]

[0004] When the applied pressure is released, the main body of the sensor layer returns to its original shape. However, it takes time for the main body to return to its original shape. In other words, some conductive particles remain in contact with the sensor layer until the main body returns to its original shape, preventing the resistance of the sensor layer from increasing quickly. As a result, current flows through the sensor layer to the detection electrode immediately after the applied pressure is released. In this situation, it is desirable for the detection by the detection electrode to quickly return to a pressure-free state when the applied pressure is released.

[0005] An object of the present invention is to provide a detection device in which, when the input of pressure is released, the detection by the detection electrodes quickly returns to the no-pressure state. [Means for solving the problem]

[0006] A detection device according to a first aspect of the present disclosure includes a first substrate having a first surface formed of an organic insulating layer and a sensor layer facing the first surface. The first substrate includes a detection electrode provided on the first surface, a common electrode on the first surface and arranged around the detection electrode, a transistor covered by the organic insulating layer, a gate line covered by the organic insulating layer and connected to the gate electrode of the transistor, a signal line covered by the organic insulating layer and connected to one of the source electrode and drain electrode of the transistor, a reference potential wiring covered by the organic insulating layer, a first contact hole formed on the first surface and connecting the other of the source electrode and drain electrode of the transistor to the detection electrode, a second contact hole formed on the first surface and connecting the reference potential wiring to the common electrode, and a spacer provided between the first surface and the common electrode, causing a portion of the common electrode to protrude toward the sensor layer beyond the detection electrode. The sensor layer is supported by the common electrode, and a gap is formed between the sensor layer and the detection electrode.

[0007] A detection device according to a second aspect of the present disclosure includes a first substrate having a first surface formed by an organic insulating layer and a sensor layer facing the first surface. The first substrate includes a detection electrode provided on the first surface, a common electrode on the first surface and arranged around the detection electrode, a signal line covered by the organic insulating layer, a reference potential wiring covered by the organic insulating layer, a first contact hole formed on the first surface and connecting the signal line to the detection electrode, a second contact hole formed on the first surface and connecting the reference potential wiring to the common electrode, and a spacer provided between the first surface and the common electrode and causing a portion of the common electrode to protrude toward the sensor layer beyond the detection electrode. The sensor layer is supported by the common electrode, and a gap is formed between the sensor layer and the detection electrode. [Brief explanation of the drawings]

[0008] [Figure 1]FIG. 1 is a schematic diagram of a detection device according to the first embodiment, viewed from the front. [Figure 2] FIG. 2 is a schematic cross-sectional view of the detection device of the first embodiment, and more specifically, a schematic cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 3 is an enlarged view of a part (plurality of individual detection regions) of the first surface of the first substrate of the first embodiment, viewed from the sensor layer side. [Figure 4] FIG. 4 is a circuit diagram showing the circuit configuration of the detection device of the first embodiment. [Figure 5] FIG. 5 is an enlarged view of the first substrate of the first embodiment with the conductive tape attached to the first surface thereof, viewed from the sensor layer side. [Figure 6] FIG. 6 is a cross-sectional view schematically showing a state in which pressure is input to the detection device of the first embodiment. [Figure 7] FIG. 7 is a cross-sectional view schematically showing a state immediately after the pressure input to the detection device of the first embodiment is released. [Figure 8] FIG. 8 is an enlarged view of a part of the first surface of the first substrate of the first modification, viewed from the sensor layer side. [Figure 9] FIG. 9 is an enlarged view of the first substrate of Modification Example 1 with the conductive tape adhered to it, viewed from the sensor layer side. [Figure 10] FIG. 10 is a schematic cross-sectional view of the detection device of the second modification. [Figure 11] FIG. 11 is a schematic diagram of the detection device of the second modification seen from the front. [Figure 12] FIG. 12 is a schematic cross-sectional view of a detection device according to the third modification. [Figure 13] FIG. 13 is a schematic cross-sectional view of the detection device of the second embodiment, and more specifically, a schematic cross-sectional view taken along line XIII-XIII in FIG. [Figure 14] FIG. 14 is a diagram showing a part of the first surface (plurality of individual detection regions) of the detection device of the second embodiment, viewed from the sensor layer side. [Figure 15] FIG. 15 is a circuit diagram showing the circuit configuration of the detection device of the second embodiment. [Figure 16] FIG. 16 is a schematic front view of the detection device according to the second embodiment. [Figure 17] FIG. 17 is a diagram showing a state in which a conductive tape is arranged on the first surface of the detection device of the second embodiment, as viewed from the sensor layer side. [Figure 18] FIG. 18 is a schematic diagram of a cross section taken along line XVIII-XVIII in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0009] Modes (embodiments) for implementing the detection device of the present disclosure will be described in detail with reference to the drawings. The invention of the present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the invention are naturally included within the scope of the present invention. For clarity of explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each figure, components similar to those previously described with reference to the preceding figures are designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] Furthermore, in this specification and claims, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0011] (Embodiment 1) FIG. 1 is a schematic diagram of a detection device according to embodiment 1, viewed from the front. The detection device 100 is a device that detects pressure acting on a detection surface 1. As shown in FIG. 1, the detection device 100 is formed in a flat plate shape. The detection device 100 has a planar front surface (detection surface 1) and a planar back surface 2 (not shown in FIG. 1; see FIG. 2). The detection device 100 has a rectangular shape when viewed from the normal direction of the detection surface 1.

[0012] The detection surface 1 is divided into a detection area 3 where pressure can be detected and a peripheral area 4 where pressure cannot be detected. The detection area 3 is located in the center of the detection surface 1. The peripheral area 4 is formed in a frame shape and surrounds the outside of the detection area 3.

[0013] The detection area 3 is rectangular when viewed from the normal direction of the detection surface 1. Therefore, the outer frame M of the detection area 3 has a pair of short sides 3a and a pair of long sides 3b. Hereinafter, a direction parallel to the detection surface 1 and parallel to the short sides 3a will be referred to as a first direction X. A direction parallel to the detection surface 1 and parallel to the long sides 3b will be referred to as a second direction Y. Therefore, the second direction Y is a direction perpendicular to (intersects with) the first direction X. Furthermore, a direction parallel to the detection surface 1 may be referred to as a planar direction.

[0014] The detection area 3 is divided into a plurality of individual detection areas 5. In other words, the detection area 3 is a collection of a plurality of individual detection areas 5. Pressure is detected in each of the individual detection areas 5. When viewed from the normal direction of the detection surface 1, each individual detection area 5 is square. The plurality of individual detection areas 5 are arranged in a first direction X and a second direction Y.

[0015] FIG. 2 is a schematic cross-sectional view of the detection device of embodiment 1, specifically a cross-sectional view taken along line II-II in FIG. 3. As shown in FIG. 2, the detection device 100 includes a first substrate 10, a sensor layer 80, and a protective layer 90, which are stacked in this order. Hereinafter, the direction in which the first substrate 10, the sensor layer 80, and the protective layer 90 are stacked will be referred to as the stacking direction. Note that the normal direction of the detection surface 1 has the same meaning as the stacking direction. In addition, within the stacking directions, the direction in which the sensor layer 80 is arranged as viewed from the first substrate 10 will be referred to as the first stacking direction Z1, and the opposite direction will be referred to as the second stacking direction Z2. The view from the first stacking direction Z1 will be referred to as a planar view.

[0016] The first substrate 10 includes a base material 11 and a circuit-forming layer 12 formed in a first stacking direction Z1 of the base material 11. The base material 11 is a plate-like member that supports the circuit-forming layer 12 and has insulating properties. An example of the base material 11 is a flexible substrate made of polyimide, but the present disclosure is not limited thereto. The surface of the base material 11 in the second stacking direction Z2 forms the back surface 2 of the detection device 100.

[0017] The circuit formation layer 12 has a first insulating layer 13, a second insulating layer 14, and a third insulating layer 15 stacked in this order on the surface of the base material 11 in the first stacking direction Z1. A gate insulating film 42 of a transistor 40, which will be described later, is provided between the first insulating layer 13 and the second insulating layer 14.

[0018] The first insulating layer 13 and the second insulating layer 14 are made of an inorganic material such as SiO or SiN. The third insulating layer 15 is an organic insulating layer made of an organic material. The third insulating layer 15 is a layer (planarizing film) for planarizing the surface of the circuit-forming layer 12 in the first stacking direction Z1. Therefore, the first surface 16 of the circuit-forming layer 12 in the first stacking direction Z1 is composed of the third insulating layer 15. In addition, a detection electrode 20, a common electrode 30, a spacer 60, and a contact hole 6 are formed on the first surface 16 of the circuit-forming layer 12.

[0019] The detection electrode 20 and the common electrode 30 are metal films (metal layers) formed on the first surface 16 using a metal material such as ITO (Indium Tin Oxide). In this embodiment, the detection electrode 20 and the common electrode 30 each have a two-layer structure. That is, the detection electrode 20 has a first detection electrode layer 21 formed on the first surface 16 and a second detection electrode layer 22 formed on the first detection electrode layer 21. The common electrode 30 has a first common electrode layer 31 formed on the first surface 16 and a second common electrode layer 32 formed in a first stacking direction Z1 of the first common electrode layer 31.

[0020] 3 is an enlarged view of a portion (plurality of individual detection regions) of the first surface of the first substrate of embodiment 1, viewed from the sensor layer side. In FIG. 3, the detection electrodes 20 and the common electrode 30 are marked with dots to make them easier to see. As shown in FIG. 3, the detection electrodes 20 are disposed in the center of the individual detection regions 5. In plan view, the detection electrodes 20 are square. Furthermore, a plurality of detection electrodes 20 are formed on the first surface 16. That is, one detection electrode 20 is disposed in each individual detection region 5.

[0021] The common electrode 30 is a solid film formed on the first surface 16, and spans the multiple individual detection areas 5. The common electrode 30 has multiple openings 35 that are square in plan view. One opening 35 is formed for each individual detection area 5. The detection electrodes 20 are disposed inside the openings 35. Therefore, the detection electrodes 20 are surrounded by the common electrode 30.

[0022] The opening 35 is larger than the detection electrode 20. Therefore, a part of the first surface 16 is exposed between the edge of the opening 35 of the common electrode 30 and the edge of the detection electrode 20. In other words, the detection electrode 20 and the common electrode 30 are separated from each other and are not electrically connected on the first surface 16. Hereinafter, the part of the first surface 16 exposed from the opening 35 may be referred to as a first surface exposed portion 17. The first surface exposed portion 17 is annular (rectangular frame-shaped).

[0023] As shown in FIG. 2, the spacer 60 has insulating properties and is formed of the same organic material as the third insulating layer 15. Note that the spacer of the present disclosure is not limited to an organic material as long as it has insulating properties. The spacer 60 is stacked across the first surface 16 and the first common electrode layer 31. The second common electrode layer 32 is formed in the first stacking direction Z1 of the spacer 60. Therefore, a portion of the second common electrode layer 32 protrudes in the first stacking direction Z1. Furthermore, a portion of the second common electrode layer 32 protrudes further in the first stacking direction Z1 than the second detection electrode layer 22 (detection electrode 20). Hereinafter, the portion of the second common electrode layer 32 that is stacked on the spacer 60 and protrudes further than the second detection electrode layer 22 (detection electrode 20) will be referred to as a protrusion 70.

[0024] The spacer 60 has a pair of a first spacer 61 and a second spacer 62 spaced apart from each other in the first direction X. Therefore, the convex portion 70 also has a first convex portion 71 stacked on the first spacer 61 and a second convex portion 72 stacked on the second spacer 62. The first spacer 61 and the second spacer 62 extend in the second direction Y. Therefore, as shown in FIG. 3, the first convex portion 71 and the second convex portion 72 also extend in the second direction Y. Note that in FIG. 3, the hatching of the portion of the common electrode 30 where the convex portion 70 is formed is different from the hatching of the portion other than the convex portion 70.

[0025] Hereinafter, a boundary line separating the multiple individual detection areas 5 in the second direction Y will be referred to as a first boundary line M1. Furthermore, a boundary line separating the multiple individual detection areas 5 in the first direction X will be referred to as a second boundary line M2. As shown in FIG. 2, a plurality of spacers 60 are provided. The spacers 60 are arranged in the first direction X. A second boundary line M2 is disposed between a pair of a first spacer 61 and a second spacer 62. Therefore, a second boundary line M2 is also disposed between a pair of a first protrusion 71 and a second protrusion 72.

[0026] 3, the first convex portion 71 is arranged along one edge in the first direction X1 within the individual detection area 5. Furthermore, the second convex portion 72 is arranged along the other edge in the first direction X1 within the individual detection area 5.

[0027] As shown in FIG. 2, the contact hole 6 is a hole extending from the first surface 16 of the first substrate 10 in the second stacking direction Z2. A plurality of contact holes 6 are provided. Each contact hole 6 is disposed in a portion of the first surface 16 that is covered by the detection electrode 20 and the common electrode 30. This allows the detection electrode 20 and the common electrode 30 to be connected to electrical wiring inside the circuit formation layer 12. Hereinafter, the contact hole 6 that is covered by the detection electrode 20 will be referred to as a first contact hole 7, and the contact hole 6 that is covered by the common electrode 30 will be referred to as a second contact hole 8.

[0028] 3, the first contact hole 7 is arranged near the center of the individual detection area 5. The second contact holes 8 include second corner contact holes 8A arranged at the four corners of the individual detection area 5, and second first boundary line contact holes 8B arranged in the second direction Y relative to the first contact holes 7 and overlapping the first boundary line M1.

[0029] Fig. 4 is a circuit diagram showing the circuit configuration of the detection device of embodiment 1. As shown in Fig. 4, transistors 40, gate lines 46, signal lines 47, reference potential lines 48, connection parts 50 (see Fig. 1), gate line driving circuits 51 (see Fig. 1), signal line selection circuits 52 (see Fig. 1), and common lines 53 (see Fig. 1) are formed inside the circuit-forming layer 12. Furthermore, a plurality of transistors 40, gate lines 46, signal lines 47, and reference potential lines 48 are formed.

[0030] The transistor 40 is a switching element. A plurality of transistors 40 are arranged one for each individual detection region 5. As shown in FIG. 2, the transistor 40 includes a semiconductor layer 41, a gate insulating film 42, a gate electrode 43, a drain electrode 44, and a source electrode 45. An end of the source electrode 45 in the first stacking direction Z1 is connected to a connection wiring 45a. The connection wiring 45a extends in the planar direction (see FIG. 3) and is connected to the detection electrode 20 (first detection electrode layer 21). For ease of understanding, only one transistor 40 of the plurality of transistors 40 is shown in FIG. 3.

[0031] The gate line 46 extends in a first direction X. The multiple gate lines 46 are arranged in a second direction Y. As shown in FIG. 3, the gate line 46 has a branch portion 46a extending in the second direction Y. The branch portion 46a is provided in each individual detection region 5. The gate line 46 is connected to each gate electrode 43 (see FIG. 2) of the multiple transistors 40 arranged in the first direction X via the branch portion 46a. Note that, for ease of understanding the drawing, only one gate line 46 of the multiple gate lines 46 is shown in FIG. 3.

[0032] As shown in Fig. 4, the signal line 47 extends in the second direction Y. The multiple signal lines 47 are arranged in the first direction X. The signal line 47 is connected to each of the drain electrodes 44 (see Fig. 2) of the multiple transistors 40 arranged in the second direction Y. For ease of understanding the drawing, Fig. 3 shows only one of the multiple signal lines 47.

[0033] As shown in FIG. 4, the reference potential wiring 48 extends in the second direction Y. The multiple reference potential wirings 48 are arranged in the first direction X. As shown in FIG. 3, each reference potential wiring 48 overlaps the second boundary line M2 in plan view. As a result, the reference potential wiring 48 overlaps the second corner contact hole 8A. The reference potential wiring 48 and the common electrode 30 (first common electrode layer 31) are connected via the second corner contact hole 8A. Note that, for ease of understanding, only one reference potential wiring 48 of the multiple reference potential wirings 48 is shown in FIG. 3.

[0034] As shown in FIG. 3, in a plan view, the first spacer 61 (first convex portion 71) overlaps one end 48a of the reference potential wiring 48 in the first direction X, and the second spacer 62 (second convex portion 72) overlaps the other end 48b of the reference potential wiring 48 in the first direction X.

[0035] 3, the reference potential wiring 48 is provided with a reference potential branch wiring 49 that branches in the first direction X. The reference potential branch wiring 49 overlaps the first boundary line M1 in plan view. That is, the reference potential branch wiring 49 overlaps the first boundary line second contact hole 8B. This connects the reference potential wiring 48 and the common electrode 30 (first common electrode layer 31) via the first boundary line second contact hole 8B.

[0036] 1, the connection section 50, the gate line driving circuit 51, the signal line selection circuit 52, and the common wiring 53 are provided in the peripheral region 4 of the circuit formation layer 12. The connection section 50 is for connecting to a driving IC (Integrated Circuit) arranged outside the detection device 100. The driving IC may be mounted as a COF (Chip On Film) on a flexible printed circuit board or a rigid substrate connected to the connection section 50. Alternatively, the driving IC may be mounted as a COG (Chip On Glass) in the peripheral region 4 of the first substrate 10.

[0037] The gate line driving circuit 51 is a circuit that drives the multiple gate lines 46 (see FIG. 4) based on various control signals from the driving IC. The gate line driving circuit 51 selects the multiple gate lines 46 sequentially or simultaneously, and supplies gate driving signals to the selected gate lines 46.

[0038] The signal line selection circuit 52 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines 47 (see FIG. 4). The signal line selection circuit 52 is, for example, a multiplexer. The signal line selection circuit 52 connects the selected signal line 47 to the driving IC based on a selection signal supplied from the driving IC.

[0039] The common wiring 53 is connected to the driving IC via the connection portion 50, and a constant amount of current is supplied from the driving IC. The common wiring 53 extends along the peripheral region in a ring shape. The reference potential wiring 48 is connected to the common wiring 53. This allows a constant amount of current to be supplied to the common electrode 30.

[0040] 2, a plurality of conductive tapes 91 are provided in the first stacking direction Z1 of the first substrate 10. Although not particularly shown, the conductive tape 91 has a main layer having conductivity and adhesive layers provided on both sides of the main layer.

[0041] 5 is an enlarged view of the state in which conductive tape is attached to the first surface of the first substrate of the first embodiment, viewed from the sensor layer side. In FIG. 5, the conductive tape 91 is hatched with diagonal lines to make the range of the conductive tape 91 easier to understand. As shown in FIG. 5, the conductive tape 91 extends in the second direction Y. A plurality of conductive tapes 91 are arranged in the first direction X. Each conductive tape 91 overlaps the second boundary line M2 in plan view. Therefore, each conductive tape 91 is laminated on the common electrode 30 (protrusion 70). The adhesive layer (not shown) of each conductive tape 91 in the second lamination direction Z2 is adhered to the common electrode 30 (protrusion 70).

[0042] As shown in FIG. 2, the sensor layer 80 includes a main body 81 and conductive particles (hereinafter referred to as conductive particles 82) dispersed within the main body 81. The main body 81 is formed of a deformable and highly insulating material, such as silicone rubber. The conductive particles 82 are spaced apart from one another within the main body 81. The thickness of the sensor layer 80 when no pressure is applied is H1. When no pressure is applied to the sensor layer 80 and the main body 81 is not deformed, the resistance of the sensor layer 80 is high. On the other hand, when pressure is applied to the sensor layer 80 and the thickness of the main body 81 decreases, the conductive particles 82 come into contact with or are close to each other, and the resistance of the sensor layer 80 decreases. In addition, the sensor layer 80 is large enough to cover at least the entire detection region 3.

[0043] The sensor layer 80 is supported by the protrusions 70 (first protrusions 71 and second protrusions 72) of the first substrate 10. That is, the sensor layer 80 is spaced from the detection electrodes 20 in the first stacking direction Z1. Therefore, a gap (space) S is formed between the sensor layer 80 and the detection electrodes 20. Note that the gap S in this embodiment is filled with air. Therefore, the gap S in this embodiment is an air gap. Furthermore, the sensor layer 80 is bonded to a conductive tape 91 and is integrated with the first substrate 10. Therefore, the sensor layer 80 is supported by the protrusions 70 in each individual detection region 5 with tension (see arrow A in FIG. 2) acting in the first direction X.

[0044] The protective layer 90 is formed of an elastically deformable, insulating material such as rubber or resin. The surface of the protective layer 90 in the first stacking direction Z1 serves as the detection surface 1. The sensor layer 80 is bonded to the surface of the protective layer 90 in the second stacking direction Z2. In addition, the integrated sensor layer 80 and protective layer 90 are bonded to the first substrate 10 via a frame-shaped frame portion (not shown) in an area overlapping the peripheral region 4.

[0045] 6 is a cross-sectional view schematically illustrating a state in which pressure is input to the detection device of embodiment 1. Next, an example of the operation of the detection device 100 will be described. As shown in FIG. 6, when pressure F1 is input to the detection surface 1, the gap S collapses, and the protective layer 90 and the sensor layer 80 in the individual detection region 5 to which pressure F1 is input are deformed in the second stacking direction Z2. This causes the sensor layer 80 to come into contact with the detection electrode 20. In other words, the sensor layer 80 comes into contact with both the detection electrode 20 and the common electrode 30 (protrusion 70).

[0046] On the other hand, the sensor layer 80 deformed in the second stacking direction Z2 receives a reaction force F2 from each of the detection electrode 20 and the common electrode 30 (protrusion 70). That is, a compressive load due to the pressure F1 and the reaction force F2 acts on the sensor layer 80. As a result, the thickness of the main body portion 81 of the sensor layer 80 in the stacking direction is reduced by H2 (H2

[0047] Furthermore, as the pressure F1 increases, the compressive load acting on the main body portion 81 also increases. Therefore, the amount of conductive particles 82 in contact or proximity increases, further reducing the resistance of the sensor layer 80. This increases the current flowing through the detection electrode 20. In this manner, the current value input to the detection electrode 20 increases in proportion to the input pressure F1. The electrical signal (current value) input to the detection electrode 20 is output to the driving IC via the signal line 47. The driving IC then calculates the load input to the individual detection region 5 based on the current value. Note that, although the current value input to the detection electrode 20 in this embodiment is proportional to the magnitude of the input pressure, the current value input to the detection electrode 20 may also increase as the input pressure increases. The present disclosure is not limited to the examples described in the embodiments.

[0048] ​5, the air filling the gap S of the individual detection region 5 moves to the gap S of the adjacent individual detection region 5 in the second direction Y (see arrow C1). This prevents the sensor layer 80 from not coming into contact with the detection electrode 20 due to high air pressure in the gap S.

[0049] Fig. 7 is a cross-sectional view schematically illustrating the state immediately after the pressure applied to the detection device of embodiment 1 is released. As shown in Fig. 7, when the applied pressure F1 is released, the sensor layer 80 and the protective layer 90 return to their original shapes. That is, a portion of the sensor layer 80 that has deformed in the second stacking direction Z2 moves in the first stacking direction Z1 (see arrow D in Fig. 7), and the thickness of the main body portion 81 in the stacking direction also returns to its original state.

[0050] Here, it takes time for the thickness of the main body portion 81 to return to its original thickness H1. This is because it takes time for the stress acting on the main body portion 81 to disappear. Therefore, even immediately after the input of the pressure F1 is released, there are many conductive particles 82 in contact or proximity, and the resistance value of the sensor layer 80 has not returned to its original value (high resistance value). For this reason, if the sensor layer 80 is in contact with both the detection electrode 20 and the common electrode 30 immediately after the input of the pressure F1 is released, a current flows to the detection electrode 20 via the sensor layer 80, and the pressure F1 is detected.

[0051] On the other hand, in this embodiment, when the input of the pressure F1 is released, the sensor layer 80 moves in the first stacking direction Z1. That is, when the input of the pressure F1 is released, the sensor layer 80 loses electrical connection between the detection electrode 20 and the common electrode 30. Therefore, no current flows through the detection electrode 20, and the pressure F1 is not detected.

[0052] As described above, according to the detection device 100 of this embodiment, the electrical connection between the detection electrode 20 and the common electrode 30 (contact of the sensor layer 80) is released before the resistance value of the sensor layer 80 returns to its original value. Therefore, the detection electrode 20 can detect the no-pressure state more quickly (early) than in a detection device in which the gap S is not formed (a detection device in which the sensor layer is always in contact with both the common electrode and the detection electrode).

[0053] Furthermore, both ends of each individual detection region 5 in the first direction X1 of the sensor layer 80 are adhered to the protrusions 70 by conductive tape 91, and tension (see arrow A in FIG. 2) is applied to the sensor layer 80. Therefore, a restoring force (a force returning to the original shape) acting on the main body 81 is large, and the sensor layer 80 quickly separates from the detection electrode 20. This allows the detection electrode 20 to detect the no-pressure state more quickly (early).

[0054] Next, a description will be given of a modified example in which the detection device 100 of the first embodiment is partially modified. The following description will focus on the differences from the detection device described above.

[0055] (Variation 1) Fig. 8 is an enlarged view of a portion of the first surface of the first substrate of Modification 1, viewed from the sensor layer side. As shown in Fig. 7, convex portions 70A of detection device 100A of Modification 1 differ from those of Embodiment 1 in that they have a plurality of pairs of third convex portions 73 and fourth convex portions 74. That is, third spacers 63 for forming the third convex portions 73 and fourth spacers 64 for forming the fourth convex portions 74 are provided on first surface 16 of Modification 1.

[0056] A pair of the third convex portion 73 and the fourth convex portion 74 are arranged spaced apart from each other in the second direction Y. A first boundary line M1 is located between the pair of the third convex portion 73 and the fourth convex portion 74. The pair of the third convex portion 73 and the fourth convex portion 74 are arranged between the first convex portion 71 and the second convex portion 72, which are arranged with the detection electrode 20 sandwiched between them.

[0057] The third convex portion 73 and the fourth convex portion 74 each extend discontinuously in the first direction X. That is, the third convex portion 73 is made up of two (a plurality of) partial convex portions 73A. The fourth convex portion 74 is made up of two (a plurality of) partial convex portions 74A.

[0058] One of the two partial protrusions 73A is connected to the first protrusion 71. The other of the two partial protrusions 73A is connected to the second protrusion 72 of another set. Similarly, one of the two partial protrusions 74A is connected to the first protrusion 71. The other of the two partial protrusions 74A is connected to the second protrusion 72 of another set.

[0059] Therefore, according to the first modification, communication holes 95 are formed between the partial convex portions 73A and between the partial convex portions 74A, which connect the gaps S of the individual detection regions 5 adjacent in the second direction Y. Note that although the partial convex portions 73A and 74A in this embodiment are connected to the first convex portion 71 and the second convex portion 72, they do not have to be connected in the present disclosure. This increases the number of communication holes 95.

[0060] Furthermore, one of the two partial convex portions 73A overlaps one end of the reference potential branch wiring 49 in the second direction Y. Furthermore, one of the two partial convex portions 74A overlaps the other end of the reference potential branch wiring 49 in the second direction Y. In other words, at least a portion of the third convex portion 73 overlaps one end of the reference potential branch wiring 49 in the second direction Y. Furthermore, at least a portion of the fourth convex portion 74 overlaps the other end of the reference potential branch wiring 49 in the second direction Y.

[0061] Fig. 9 is an enlarged view of the state in which the conductive tape is adhered to the first substrate of Modification 1, viewed from the sensor layer side. As shown in Fig. 9, conductive tape 91A of Modification 1 differs from conductive tape 91 of Embodiment 1 in that it has a plurality of horizontal portions 92 extending along first boundary line M1 and a plurality of vertical portions 93 extending along second boundary line M2, forming a lattice pattern.

[0062] According to the conductive tape 91A, the first convex portions 71 and the second convex portions 72, and the third convex portions 73 and the fourth convex portions 74 of the first substrate 10 are bonded to the sensor layer 80. Therefore, tension in the first direction X (see arrow A in FIG. 2 ) and tension in the second direction Y act on each individual detection region 5 of the sensor layer 80. Note that the portions of the conductive tape 91A that overlap with the communication holes 95 in a plan view extend along the first surface 16 of the first substrate 10 (are bonded to the first surface 16) so as not to close the communication holes 95, and are not bonded to the sensor layer 80.

[0063] According to the above-described first modification, when pressure is input, the air filling the gap S of the individual detection region 5 to which the pressure is input moves to the gap S of the adjacent individual detection region 5 in the second direction Y through the communication hole 95 (arrow C2 in FIG. 8). Therefore, when pressure is input, it is possible to prevent the sensor layer 80 from not coming into contact with the detection electrode 20 due to high air pressure in the gap S.

[0064] Furthermore, according to the first modification, tension in the first direction X and tension in the second direction Y act on the sensor layer 80 in each individual detection region 5. Therefore, when the input of pressure F1 is released, the restoring force acting on the sensor layer 80 is greater than that in the first embodiment. Therefore, the sensor layer 80 quickly separates from the detection electrode 20, and the detection electrode 20 can detect the no-pressure state more quickly (early).

[0065] (Variation 2) Fig. 10 is a schematic diagram of a cross section of a detection device of Modification 2. As shown in Fig. 10, detection device 100B of Modification 2 differs from embodiment 1 in that it does not have conductive tape 91. Therefore, sensor layer 80 is not adhered to protrusion 70. However, because sensor layer 80 abuts against protrusion 70, gap S is still formed between sensor layer 80 and first surface 16 or between sensor layer 80 and detection electrode 20. Also, detection device 100B of Modification 2 differs from embodiment 1 in that gap S is filled with liquid instead of air. The liquid has insulating properties.

[0066] Fig. 11 is a schematic diagram of the detection device of Modification 2 as viewed from the front. Also, as shown in Fig. 10, the detection device 100B of Modification 2 differs from Embodiment 1 in that a seal 94 is provided between the first surface 16 of the first substrate and the sensor layer 80. This seal 94 is disposed in the peripheral region 4 and is formed in a frame shape surrounding the detection region 3. This seal 94 prevents the liquid filled in the gap S from leaking to the outside.

[0067] According to the second modification, the liquid filling the gap S of the individual detection region 5 to which pressure is input moves to the gap S of the adjacent individual detection region 5 in the second direction Y (see arrow C1 in FIG. 5). Alternatively, as shown by arrow C3 in FIG. 10, the liquid passes between the convex portions 70 (first convex portions 71 and second convex portions 72) and the sensor layer 80, and moves between the first convex portions 71 and the second convex portions 72 or to the gap S of the adjacent individual detection region 5 in the first direction X. This prevents the sensor layer 80 from not coming into contact with the detection electrode 20 due to high liquid pressure in the gap S.

[0068] Also in Modification 2, when the sensor layer 80 comes into contact with the detection electrode 20 and the thickness of the sensor layer 80 decreases, a current flows from the common electrode 30 to the detection electrode 20. When the input of pressure is released, the sensor layer 80 moves in the first stacking direction Z1, and the electrical connection between the detection electrode 20 and the common electrode 30 is released. Here, when the input of pressure is released, liquid quickly penetrates between the sensor layer 80 and the detection electrode 20. That is, the liquid that is pressed by the sensor layer 80 and moves in the first direction X and the second direction Y quickly penetrates between the sensor layer 80 and the detection electrode 20 due to the cohesive force of the liquid. Therefore, the electrical connection between the detection electrode 20 and the common electrode 30 is quickly released. From the above, the detection electrode 20 in Modification 2 can quickly (early) detect a pressure-free state.

[0069] In the second modification, an example in which the gap S is filled with a liquid has been described, but in the present disclosure, the gap S may be filled with a gas instead of a liquid.

[0070] (Variation 3) FIG. 12 is a schematic cross-sectional view of a detection device according to Modification 3. As shown in FIG. 12, the detection device 100C according to Modification 3 differs from Modification 2 in that it includes the conductive tape 91 described in the first embodiment. According to Modification 3, when pressure is applied, the liquid does not pass between the sensor layer 80 and the protrusions 70. This reduces the range within which the liquid can move. Meanwhile, the sensor layer 80 is subjected to tension in the first direction X1 (see arrow A in FIG. 2 ) in each individual detection region. Therefore, when the pressure application is released, the detection electrode 20 detects the no-pressure state more quickly (early) than in Modification 2.

[0071] In the above, in the first embodiment and its first to third modifications, an active matrix type detection device in which a transistor is arranged in each individual detection region 5 has been described, but the present disclosure may also be applied to a passive matrix type detection device. Hereinafter, a passive matrix type detection device will be described in the second embodiment.

[0072] (Embodiment 2) Fig. 13 is a schematic cross-sectional view of the detection device of embodiment 2, and more specifically, a schematic cross-sectional view taken along line XIII-XIII in Fig. 14. The detection device 100D includes a first substrate 10D, a sensor layer 80, and a protective layer 90, which are stacked in this order. A conductive tape 91D is provided between the first substrate 10D and the sensor layer 80, and the first substrate 10D and the sensor layer 80 are integrated together.

[0073] The first substrate 10D includes a base material 11 and a circuit-forming layer 12D. The circuit-forming layer 12D of the second embodiment is composed only of a third insulating layer 15 (planarizing film) made of an organic material. However, the present disclosure does not particularly limit the configuration of the insulating layer of the circuit-forming layer 12D.

[0074] A detection electrode 20D, a common electrode 30D, a spacer 160, a contact hole 6, and an insulating bank 180 are formed on the first surface 16 of the first substrate 10D. The detection electrode 20D and the common electrode 30D each have a two-layer structure, similar to the first embodiment.

[0075] 14 is a diagram showing a portion of the first surface (plurality of individual detection regions) of the detection device of embodiment 2 as viewed from the sensor layer side. The common electrode 30D of embodiment 2 extends in the first direction X and spans the plurality of individual detection regions 5. Furthermore, a plurality of common electrodes 30D of embodiment 2 are provided. The plurality of common electrodes 30D are arranged in the second direction Y. In other words, a different common electrode 30D is arranged for each of the individual detection regions 5 arranged in the second direction Y.

[0076] Common electrodes 30D adjacent to each other in the second direction Y are spaced apart from each other and are not electrically connected on the first surface 16. Therefore, a portion of the first surface 16 of the first substrate 10 is exposed between the common electrodes 30D adjacent to each other in the second direction Y. Hereinafter, the portion of the first surface 16 exposed between the common electrodes 30D adjacent to each other in the second direction Y will be referred to as the linear first surface exposed portion 17A. The linear first surface exposed portion 17A extends in the first direction X and overlaps with the first boundary line M1 in a plan view. An insulating bank 180 is provided on the linear first surface exposed portion 17A.

[0077] The common electrode 30D has a plurality of openings 35 formed therein. The openings 35 are located in the center of the individual detection area 5. The detection electrode 20D is located in the center of each opening 35. Therefore, the detection electrode 20D is surrounded by the common electrode 30D. The openings 35 are larger than the detection electrode 20D. Therefore, the detection electrode 20D and the common electrode 30D are spaced apart and not electrically connected on the first surface 16. A portion of the first surface 16 is exposed between the edge of the openings 35 of the common electrode 30 and the edge of the detection electrode 20. Hereinafter, the portion of the first surface 16 exposed through the openings 35 will be referred to as the annular first surface exposed portion 17B. The annular first surface exposed portion 17B has an annular (rectangular frame) shape.

[0078] The spacer 160 has insulating properties and is made of the same organic material as the third insulating layer 15. As shown in Fig. 13, the spacer 160 is laminated across the first surface 16 and the first common electrode layer 31, as in the first embodiment. As a result, a part of the second common electrode layer 32 forms a convex portion 170 that protrudes in the first stacking direction Z1 further than the second detecting electrode layer 22 (detecting electrode 20D).

[0079] 14, the spacer 160 has a one-side spacer 161 arranged on one side in the second direction Y with the detection electrode 20D in between, and a other-side spacer 162 arranged on the other side in the second direction Y. The one-side spacer 161 has a pair of fifth spacers 165 and sixth spacers 166 spaced apart from each other in the second direction Y. The other-side spacer 162 has a pair of seventh spacers 167 and eighth spacers 168 spaced apart from each other in the second direction Y. The fifth spacer 165, the sixth spacer 166, the seventh spacer 167, and the eighth spacer 168 each extend in the first direction X.

[0080] From the above, the convex portion 170 of embodiment 2 has a fifth convex portion 175 formed by the fifth spacer 165, a sixth convex portion 176 formed by the sixth spacer 166, a seventh convex portion 177 formed by the seventh spacer 167, and an eighth convex portion 178 formed by the eighth spacer 168.

[0081] The fifth convex portion 175, the sixth convex portion 176, the seventh convex portion 177, and the eighth convex portion 178 support the sensor layer 80 in the second stacking direction Z2. As a result, as shown in Fig. 13, a gap S is formed between the sensor layer 80 and the detection electrode 20D. According to the second embodiment, when the input of pressure is released, the sensor layer 80 quickly moves away from the detection electrode 20, similar to the first embodiment. That is, the detection electrode 20 can quickly (early) detect the no-pressure state.

[0082] Furthermore, a conductive tape 91D is interposed between the protrusions 170 (the fifth protrusion 175, the sixth protrusion 176, the seventh protrusion 177, and the eighth protrusion 178) and the sensor layer 80. The sensor layer 80 is adhered to the protrusions 170 so that tension in the second direction Y acts on each individual detection region 5. Therefore, when the input of pressure is released, the sensor layer 80 moves away from the detection electrode 20D more quickly. In other words, the detection electrode 20 can detect the no-pressure state more quickly (early).

[0083] As shown in FIG. 14, the contact hole 6 has a first contact hole 7 covered by the detection electrode 20D and a second contact hole 8 covered by the common electrode 30D. The first contact hole 7 is arranged in the center of the individual detection region 5. The second contact hole 8 has a plurality of one-side second contact holes 8C arranged on one side of the first contact hole 7 in the second direction Y, and a plurality of other-side second contact holes 8D arranged on the other side of the first contact hole 7 in the second direction Y. The multiple one-side second contact holes 8C are arranged at equal intervals in the first direction X. Similarly, the other-side second contact holes 8D are also arranged at equal intervals in the first direction X. The insulating bank 180 will be described later.

[0084] Fig. 15 is a circuit diagram showing the circuit configuration of the detection device of embodiment 2. As shown in Fig. 15, a signal line 47 and a reference potential line 48D are formed on a first substrate 10D. In other words, the first substrate 10D of embodiment 2 does not have a transistor 40 or a gate line 46 formed thereon. The reference potential line 48D extends in a first direction X. Furthermore, a plurality of reference potential lines 48 are arranged in a second direction Y.

[0085] 16 is a schematic diagram of a detection device according to embodiment 2 as seen from the front. As shown in FIG. 16, embodiment 2 does not include gate lines 46, and therefore does not include a gate line driving circuit 51. Instead, the detection device 100D of embodiment 2 includes a reference potential line selection circuit 55 that selects a reference potential line 48D to be driven from among a plurality of reference potential lines 48D. A predetermined amount of current is supplied to the reference potential line 48D from the reference potential line selection circuit 55. Therefore, embodiment 2 does not include a common line 53.

[0086] As shown in FIG. 14, the reference potential wiring 48D has a reference potential main line 140 extending in the first direction X, a reference potential parallel line 141 parallel to the reference potential main line 140 across the detection electrode 20, and a reference potential connecting line 142 extending in the second direction and connecting the reference potential main line 140 and the reference potential parallel line 141.

[0087] The reference potential main line 140 spans multiple individual detection areas 5. The reference potential main line 140 is disposed on the other side of the detection electrode 20 in the second direction Y. Therefore, when viewed from the detection electrode 20D, the other-side spacer 162 is disposed on the side where the reference potential main line 140 is disposed. The reference potential main line 140 overlaps multiple other-side second contact holes 8D. The reference potential main line 140 is electrically connected to the common electrode 30D via the other-side second contact holes 8D.

[0088] Each reference potential connection line 142 branches off from the reference potential main line 140 and extends along the second boundary line M2. The reference potential parallel line 141 is disposed on one side of the detection electrode 20 in the second direction Y. Therefore, when viewed from the detection electrode 20D, the one-side spacer 161 is disposed on the side where the reference potential parallel line 141 is disposed. The reference potential parallel line 141 also extends intermittently in the first direction X. Therefore, the reference potential parallel line 141 is composed of multiple partial potential lines 141A divided in the first direction X. The partial potential lines 141A are connected to the reference potential connection line 142. They overlap the one-side second contact holes 8C. Therefore, the partial potential lines 141A are electrically connected to the common electrode 30D via the one-side second contact holes 8C. As a result, the current flowing through each portion of the common electrode 30D is uniform.

[0089] Furthermore, parts of the fifth spacer 165 and the sixth spacer 166 overlap with both end portions of the reference potential parallel line 141 (partial potential line 141A) in the second direction Y. The seventh spacer 167 and the eighth spacer 168 overlap with both end portions of the reference potential main line 140 in the second direction Y.

[0090] In the detection method of the detection device of embodiment 2, a reference potential wiring selection circuit 55 (see FIG. 16) selects one reference potential wiring 48 from the multiple reference potential wirings 48. A predetermined amount of current is then supplied to one common electrode 30 via the selected reference potential wiring 48. As a result, pressure input to each individual detection area 5 arranged in the first direction X can be detected. Next, the signal line selection circuit 52 sequentially selects the signal lines 47 arranged in the first direction X to detect the amount of current flowing through the detection electrode 20D. Once all signal lines 47 have been selected, the reference potential wiring selection circuit 55 selects another reference potential wiring 48. In other words, in this embodiment, multiple individual detection areas 5 arranged in the first direction X are treated as one detection group, and once detection for one detection group is completed, the detection target is moved in the second direction Y.

[0091] 17 is a diagram showing a state in which conductive tape is arranged on a first surface of the detection device of Embodiment 2, viewed from the sensor layer side. The conductive tape 91D of Embodiment 2 extends in the first direction X. The conductive tape 91D also overlaps the insulating bank 180 (first boundary line M1) in plan view. Furthermore, the conductive tape 91D also overlaps the seventh convex portion 177 and the eighth convex portion 178 arranged on one side of the insulating bank 180 in the second direction Y, and the fifth convex portion 175 and the sixth convex portion 176 arranged on the other side of the insulating bank 180 in the second direction Y, in plan view. Thus, one conductive tape 91D bonds the insulating bank 180, the fifth convex portion 175, the sixth convex portion 176, the seventh convex portion 177, the eighth convex portion 178, and the sensor layer 80 together.

[0092] FIG. 18 is a schematic diagram of a cross section taken along line XVIII-XVIII in FIG. 14. As shown in FIG. 18, a fifth spacer 165 and an eighth spacer 168 are arranged on both sides of the insulating bank 180 in the second direction Y. The insulating bank 180 protrudes in the first stacking direction Z1 and supports the sensor layer 80 via a conductive tape 91D. The insulating bank 180 is insulating and is formed of the same organic material as the third insulating layer 15 and the spacer 160. Note that the insulating bank 180 of the present disclosure is not limited to an organic material as long as it has insulating properties. The insulating bank 180 extends in the first direction X along the linear first-surface exposed portion 17A (see FIG. 14). The insulating bank 180 also overlaps with the first boundary line M1. In other words, the insulating bank 180 is arranged between adjacent common electrodes 30D in the second direction Y.

[0093] The distance in the second direction Y between the insulating bank 180 and the fifth spacer 165 is W1. The distance in the second direction Y between the insulating bank 180 and the eighth spacer 168 is W2. Hereinafter, the portion of the sensor layer 80 that is disposed between the insulating bank 180 and the fifth spacer 165 will be referred to as a first non-contact portion 181. The portion of the sensor layer 80 that is disposed between the insulating bank 180 and the eighth spacer 168 will be referred to as a second non-contact portion 182.

[0094] Here, when the distance W1 between the insulating bank 180 and the fifth spacer 165 is small, the length (length in the second direction Y) of the first non-contact portion 181 also becomes small. Therefore, when pressure is applied, the amount of deformation that can occur in the second stacking direction Z2 also becomes small. The distance W1 in this embodiment is long enough to prevent the first non-contact portion 181 from being crushed even when pressure is applied to the first non-contact portion 181. In other words, the distance W1 is long enough to prevent the first non-contact portion 181 from coming into contact with the first surface 16 (conductive tape 91D) even when the first non-contact portion 181 is deformed in the second stacking direction Z2 due to pressure.

[0095] Similarly, the distance W2 in the second direction Y between the insulating bank 180 and the eighth spacer 168 is long enough so that even if pressure is input to the second non-contact portion 182 and the second non-contact portion 182 deforms in the second stacking direction Z2, it will not come into contact with the first surface 16 (conductive tape 91D).

[0096] As described above, according to the second embodiment, even if pressure is applied to the first non-contact portion 181, the first non-contact portion 181 does not come into contact with the first surface 16 (conductive tape 91D) (see imaginary line K181 in FIG. 18 ). Therefore, the first non-contact portion 181 does not receive a reaction force (see F2 in FIG. 6 ) from the first surface 16, and the first non-contact portion 181 does not collapse. That is, the resistance value of the first non-contact portion 181 does not decrease, and current does not pass through the first non-contact portion 181. Similarly, even if pressure is applied to the second non-contact portion 182, the resistance value of the second non-contact portion 182 does not decrease, and current does not pass through the second non-contact portion 182. Therefore, when a predetermined amount of current is supplied to the common electrode 30D selected by the reference potential line selection circuit 55, current flowing across the insulating bank 180 to another common electrode 30D adjacent in the second direction Y (crosstalk) is prevented.

[0097] Although the second embodiment has been described above, the present disclosure is not limited thereto. In the present disclosure, the conductive tape 91D may be an anisotropic conductive tape in which current flows only in the thickness direction (stacking direction). This anisotropic conductive tape can more reliably prevent current from flowing beyond the insulating bank 180 to another common electrode 30D adjacent in the second direction Y (crosstalk). [Explanation of symbols]

[0098] 3 Detection Area 4. Surrounding Areas 5 Individual detection areas 6 Contact holes 7. Contact Hole No. 1 8. Second Contact Hole 8A Second contact hole for corner 8B Second contact hole for first boundary line 8C Second contact hole on one side 8D Second contact hole on the other side 10, 10D First board 11 Base material 12, 12D circuit forming layer 15 Third insulating layer (organic insulating layer) 16 Front page 20, 20D detection electrode 30, 30D common electrode 40 transistors 46 gate line 47 Signal Line 48 Reference potential wiring 49 Reference potential branch wiring 60, 160 spacer 61 First spacer 62 Second spacer 70, 70A, 170 convex part 71 First convex part 72 Second convex part 73 Third convex part 73A Partial convex part 74 4th convex part 74A Partial convex part 80 Sensor Layer 90 protective layer 91, 91A, 91D Conductive Tape 95 Communication hole 100, 100A, 100B, 100C, 100D Detector 161 One side spacer 162 Other side spacer 165 5th spacer 166 6th Spacer 167 7th Spacer 168 8th Spacer 175 5th convex part 176 6th convex part 177 7th convex part 178 8th convex part 180 Insulation Bank 181 First non-contact section 182 Second non-contact section

Claims

1. a first substrate having a first surface formed of an organic insulating layer; a sensor layer facing the first surface; Equipped with The first substrate is a detection electrode provided on the first surface; a common electrode on the first surface and disposed around the detection electrode; a transistor covered with the organic insulating layer; a gate line covered with the organic insulating layer and connected to a gate electrode of the transistor; a signal line covered with the organic insulating layer and connected to one of the source electrode and the drain electrode of the transistor; a reference potential wiring covered with the organic insulating layer; a first contact hole formed on the first surface, the first contact hole connecting the other of the source electrode and the drain electrode of the transistor to the detection electrode; a second contact hole formed on the first surface and connecting the reference potential wiring and the common electrode; a spacer provided between the first surface and the common electrode, the spacer causing a portion of the common electrode to protrude toward the sensor layer beyond the detection electrode; and The sensor layer is supported by the common electrode, and a gap is formed between the sensor layer and the detection electrode. Detection device.

2. The gap is an air gap. The detection device according to claim 1 .

3. The gap is filled with a liquid. The detection device according to claim 1 .

4. The detection electrode and the common electrode each have a two-layer structure in which two metal layers are stacked. The detection device according to claim 1 .

5. A conductive tape is provided between the common electrode and the sensor layer to bond the common electrode and the sensor layer. The detection device according to claim 1 .

6. The first substrate has a flexible substrate as a base material. The detection device according to claim 1 .

7. The spacer is made of an organic material. The detection device according to claim 1 .

8. When viewed from a stacking direction in which the first substrate and the sensor layer are arranged, the spacer overlaps the reference potential wiring. The detection device according to claim 1 .

9. a plurality of the detection electrodes, a plurality of the transistors, a plurality of the gate lines, a plurality of the signal lines, and a plurality of the reference potential lines are provided; the plurality of detection electrodes are arranged in a first direction parallel to the first surface and in a second direction parallel to the first surface and intersecting the first direction; the plurality of transistors are arranged in the first direction and the second direction corresponding to the detection electrodes; the plurality of gate lines extend in the first direction and are arranged in the second direction; The plurality of signal lines extend in the second direction and are arranged in the first direction. The plurality of reference potential wirings extend in the second direction and are arranged in the first direction. The detection device according to claim 1 .

10. the spacers include a pair of first and second spacers extending in the second direction and spaced apart from each other in the first direction; When viewed from a stacking direction in which the first substrate and the sensor layer are arranged, the first spacer overlaps one end of the reference potential wiring in the first direction; The second spacer overlaps the other end of the reference potential wiring in the first direction. The detection device according to claim 9.

11. the reference potential wiring is provided with a reference potential branch wiring that branches in the first direction; the spacers include a pair of third and fourth spacers extending in the first direction and spaced apart from each other in the second direction; the third spacer and the fourth spacer each extend discontinuously in the first direction, the third spacer at least partially overlaps one end of the reference potential branch wiring in the second direction; At least a portion of the fourth spacer overlaps with the other end of the reference potential branch wiring in the second direction. The detection device according to claim 10.

12. The detection electrode is surrounded by the common electrode. The detection device according to claim 1 .

13. a first substrate having a first surface formed of an organic insulating layer; a sensor layer facing the first surface; Equipped with The first substrate is a detection electrode provided on the first surface; a common electrode on the first surface and disposed around the detection electrode; a signal line covered with the organic insulating layer; a reference potential wiring covered with the organic insulating layer; a first contact hole formed on the first surface for connecting the signal line and the detection electrode; a second contact hole formed on the first surface and connecting the reference potential wiring and the common electrode; a spacer provided between the first surface and the common electrode, the spacer causing a portion of the common electrode to protrude toward the sensor layer beyond the detection electrode; and The sensor layer is supported by the common electrode, and a gap is formed between the sensor layer and the detection electrode. Detection device.

14. a plurality of the detection electrodes, a plurality of the signal lines, and a plurality of the reference potential lines are provided; the plurality of detection electrodes are arranged in a first direction parallel to the first surface and in a second direction parallel to the first surface and intersecting the first direction; The plurality of signal lines extend in the second direction and are arranged in the first direction. The plurality of reference potential wirings extend in the first direction and are arranged in the second direction.

14. The detection device of claim 13.

15. The reference potential wiring is a reference potential main line extending in the first direction; a reference potential parallel line that extends intermittently in the first direction and is disposed on the opposite side of the detection electrode from the reference potential main line; a plurality of reference potential connection lines extending in the second direction and connecting the reference potential main line and the reference potential parallel line; and the spacer includes a first spacer and a second spacer that are arranged on both sides of the detection electrode with the detection electrode interposed therebetween, the one-side spacer is arranged on a side where the reference potential main line is arranged, as viewed from the detection electrode; the other-side spacer is disposed on a side where the reference potential parallel line is disposed as viewed from the detection electrode, the one-side spacer includes a pair of fifth and sixth spacers extending in the first direction and spaced apart from each other in the second direction; the other-side spacer includes a pair of seventh and eighth spacers extending in the first direction and spaced apart from each other in the second direction; When viewed from a stacking direction in which the first substrate and the sensor layer are arranged, the fifth spacer overlaps one end of the reference potential wiring in the second direction; the sixth spacer overlaps with the other end of the reference potential wiring in the second direction; the seventh spacer at least partially overlaps one end of the reference potential parallel line in the second direction; At least a portion of the eighth spacer overlaps with the other end of the reference potential parallel line in the second direction.

15. The detection device of claim 14.

16. An insulating bank extending in the first direction is provided between the fifth spacer and the eighth spacer.

16. The detection device of claim 15.

17. The spacer is made of an organic material.

14. The detection device of claim 13.

18. The detection electrode is surrounded by the common electrode.

14. The detection device of claim 13.

19. A conductive tape is provided between the common electrode and the sensor layer to bond the common electrode and the sensor layer.

14. The detection device of claim 13.

20. The conductive tape is an anisotropic conductive tape that electrically connects the common electrode and the sensor layer.

20. The detection device of claim 19.

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