Detection device

Abstract

To provide a detection device in which, if the input of pressure is cancelled, the detection by a detection electrode is rapidly set to a non-pressure state.SOLUTION: A detection device includes a first substrate having a first surface, a sensor layer facing the first surface, and a plurality of spacers forming a gap between the first surface and the sensor layer. The first substrate includes a detection electrode and a common electrode provided on the first surface, a transistor, a gate line connected to a gate electrode of the transistor, a signal line connected to the drain electrode of the transistor, a reference potential wire, and a first contact hole and a second contact hole. A part of the detection electrode is a first contact part disposed in the first contact hole and connected to a source electrode of the transistor. A part of the common electrode is a second contact part disposed in the second contact hole and connected to the reference potential wire. The spacer is formed for each of the first contact part and the second contact part.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a detection device. [Background technology]

[0002] The detection device is a device for detecting pressure. The detection device has a common electrode, a detection electrode, and a sensor layer in contact with both the common electrode and the detection electrode. As shown in the following patent document, the sensor layer has a main body made of, for example, rubber and a plurality of conductive particles dispersed within the main body. When pressure is applied to the sensor layer, the main body collapses and the conductive particles come into contact with each other. This reduces the resistance of the sensor layer, allowing current to flow from the common electrode to the detection electrode via the sensor layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-146489 Summary of the Invention [Problem to be solved by the invention]

[0004] When the applied pressure is released, the main body of the sensor layer returns to its original shape. However, it takes time for the main body to return to its original shape. In other words, some conductive particles remain in contact with the sensor layer until the main body returns to its original shape, preventing the resistance of the sensor layer from increasing quickly. As a result, current flows through the sensor layer to the detection electrode immediately after the applied pressure is released. In this situation, it is desirable for the detection by the detection electrode to quickly return to a pressure-free state when the applied pressure is released.

[0005] An object of the present invention is to provide a detection device in which, when the input of pressure is released, the detection by the detection electrodes quickly returns to the no-pressure state. [Means for solving the problem]

[0006] A detection device according to a first aspect of the present disclosure includes a first substrate having a first surface formed by an organic insulating layer, a sensor layer facing the first surface, and a plurality of spacers disposed between the first substrate and the sensor layer to form a gap between the first surface and the sensor layer. The first substrate includes a detection electrode disposed on the first surface, a common electrode disposed on the first surface and surrounding the detection electrode, a transistor covered by the organic insulating layer, a gate line covered by the organic insulating layer and connected to the gate electrode of the transistor, a signal line covered by the organic insulating layer and connected to one of the source electrode and drain electrode of the transistor, a reference potential wiring covered by the organic insulating layer, and first and second contact holes formed on the first surface. A portion of the detection electrode is disposed in the first contact hole and is a first contact portion connected to the other of the source electrode and drain electrode of the transistor. A portion of the common electrode is disposed in the second contact hole and is a second contact portion connected to the reference potential wiring. The spacers are formed in each of the first contact portion and the second contact portion.

[0007] A detection device according to a second aspect of the present disclosure includes a first substrate having a first surface formed by an organic insulating layer, a sensor layer facing the first surface, a common electrode disposed on the opposite side of the first substrate from the sensor layer, and a plurality of spacers disposed between the first substrate and the sensor layer to form a gap between the first surface and the sensor layer. The first substrate includes a detection electrode provided on the first surface, a transistor covered by the organic insulating layer, a gate line covered by the organic insulating layer and connected to a gate electrode of the transistor, a signal line covered by the organic insulating layer and connected to one of a source electrode and a drain electrode of the transistor, and a contact hole formed on the first surface. A portion of the detection electrode is disposed in the contact hole and serves as a contact portion that connects to the other of the source electrode and the drain electrode of the transistor. The spacer is formed in the contact portion. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view schematically illustrating a detection device according to the first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view of the detection device of the first embodiment, and more specifically, a schematic cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 3 is an enlarged view of a part of the first surface of the first substrate of the first embodiment, viewed from the sensor layer side. [Figure 4] FIG. 4 is a circuit diagram showing the circuit configuration of the detection device of the first embodiment. [Figure 5] FIG. 5 is a cross-sectional view schematically showing a state in which pressure is input to the detection device of the first embodiment. [Figure 6] FIG. 6 is a cross-sectional view schematically showing a state immediately after the pressure input to the detection device of the first embodiment is released. [Figure 7] FIG. 7 is an enlarged view of two individual detection regions arranged on the first surface of the first substrate of the first embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view of the detection device of the second embodiment. [Figure 9] FIG. 9 is an enlarged view of a part of the first surface of the first substrate of the second embodiment, viewed from the sensor layer side. DETAILED DESCRIPTION OF THE INVENTION

[0009] Modes (embodiments) for implementing the detection device of the present disclosure will be described in detail with reference to the drawings. The invention of the present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the invention are naturally included within the scope of the present invention. For clarity of explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each figure, components similar to those previously described with reference to the preceding figures are designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0010] Furthermore, in this specification and claims, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0011] (Embodiment 1) FIG. 1 is a perspective view schematically showing a detection device according to a first embodiment. The detection device 100 is a device that detects pressure acting on a detection surface 1. As shown in FIG. 1, the detection device 100 is formed in a flat plate shape. The detection device 100 has a planar front surface (detection surface 1) and a planar back surface 2 (not shown in FIG. 1; see FIG. 2). The detection device 100 has a rectangular shape when viewed from the normal direction of the detection surface 1.

[0012] The detection surface 1 is divided into a detection area 3 where pressure can be detected and a peripheral area 4 where pressure cannot be detected. The detection area 3 is located in the center of the detection surface 1. The peripheral area 4 is formed in a frame shape and surrounds the outside of the detection area 3.

[0013] The detection area 3 is formed in a rectangular shape when viewed from the normal direction of the detection surface 1. Therefore, the outer frame M of the detection area 3 has a pair of short sides 3a and a pair of long sides 3b. Hereinafter, a direction parallel to the detection surface 1 and parallel to the short sides 3a will be referred to as the first direction X. A direction parallel to the detection surface 1 and parallel to the long sides 3b will be referred to as the second direction Y. Therefore, the second direction Y is a direction perpendicular to (intersects with) the first direction X. Furthermore, below, a direction parallel to the detection surface 1 may be referred to as the planar direction.

[0014] The detection area 3 is divided into a plurality of individual detection areas 5. In other words, the detection area 3 is a collection of a plurality of individual detection areas 5, and a pressure value is detected in each of the individual detection areas 5. When viewed from the normal direction of the detection surface 1, each individual detection area 5 has a square shape. The plurality of individual detection areas 5 are arranged in a first direction X and a second direction Y.

[0015] FIG. 2 is a schematic cross-sectional view of the detection device of embodiment 1, specifically a cross-sectional view taken along line II-II in FIG. 3. As shown in FIG. 2, the detection device 100 includes a first substrate 10, a spacer 60, a sensor layer 70, and a protective layer 80, which are stacked in this order. Hereinafter, the direction in which the first substrate 10, the spacer 60, the sensor layer 70, and the protective layer 80 are stacked will be referred to as the stacking direction. Note that the normal direction of the detection surface 1 described above has the same meaning as the stacking direction. In addition, within the stacking directions, the direction in which the sensor layer 70 is arranged as viewed from the first substrate 10 will be referred to as the first stacking direction Z1, and the opposite direction will be referred to as the second stacking direction Z2. The view from the first stacking direction Z1 may be referred to as a planar view.

[0016] The first substrate 10 includes a base material 11 and a circuit-forming layer 12 formed in a first stacking direction Z1 of the base material 11. The base material 11 is a plate-like member that supports the circuit-forming layer 12 and has insulating properties. The material from which the base material 11 is formed is not particularly limited. The base material 11 may be a flexible substrate made of polyimide, for example. The surface of the base material 11 in the second stacking direction Z2 forms the back surface 2 of the detection device 100.

[0017] The circuit formation layer 12 has a first insulating layer 13, a second insulating layer 14, and a third insulating layer 15 stacked in this order on the surface of the base material 11 in the first stacking direction Z1. A gate insulating film 42 of a transistor 40, which will be described later, is provided between the first insulating layer 13 and the second insulating layer 14.

[0018] The first insulating layer 13 and the second insulating layer 14 are made of an inorganic material such as SiO or SiN. The third insulating layer 15 is an organic insulating layer made of an organic material. The third insulating layer 15 is a layer (planarizing film) for planarizing the surface of the circuit-forming layer 12 in the first stacking direction Z1. Therefore, the first surface 16 of the circuit-forming layer 12 in the first stacking direction Z is formed by the surface of the third insulating layer 15 in the first stacking direction Z1.

[0019] A detection electrode 20 and a common electrode 30 are formed on the first surface 16 of the circuit formation layer 12. The detection electrode 20 and the common electrode 30 are metal films formed on the first surface 16 using a metal material such as ITO (Indium Tin Oxide).

[0020] 3 is an enlarged view of a portion of the first surface of the first substrate of the first embodiment, viewed from the sensor layer side. In FIG. 3, the detection electrodes 20 and the common electrode 30 are marked with dots to make them easier to see. As shown in FIG. 3, the detection electrodes 20 are disposed in the center of the individual detection regions 5. In plan view, the detection electrodes 20 have a regular octagonal shape. A plurality of detection electrodes 20 are formed on the first surface 16. That is, one detection electrode 20 is disposed in each individual detection region 5.

[0021] The common electrode 30 is a solid film formed on the first surface 16, and is disposed across the plurality of individual detection regions 5. The common electrode 30 has a plurality of openings 31 formed therein, each of which has a regular octagonal shape in plan view. One opening 31 is formed for each individual detection region 5. The detection electrodes 20 are disposed inside the openings 31. Thus, the detection electrodes 20 are surrounded by the common electrode 30.

[0022] The opening 31 is larger than the detection electrode 20. Therefore, the edge 32 of the opening 31 in the common electrode 30 is separated from the edge 21 of the detection electrode 20. In other words, the detection electrode 20 and the common electrode 30 are not electrically connected on the first surface 16. Furthermore, a part of the first surface 16 is exposed between the edge 32 of the opening 31 in the common electrode 30 and the edge 21 of the detection electrode 20. Hereinafter, the part of the first surface 16 exposed from the opening 31 may be referred to as the first surface exposed portion 17. The first surface exposed portion 17 is annular (octagonal frame-shaped).

[0023] 2, the first substrate 10 has a plurality of contact holes 6 formed therein, which are holes extending from the first surface 16 in the second stacking direction Z2. Each contact hole 6 is disposed in a portion of the first surface 16 that is covered by the detection electrode 20 and the common electrode 30. Therefore, when the detection electrode 20 is formed on the first surface 16, a portion recessed in the second stacking direction Z2 along the contact hole 6 is formed. Therefore, the detection electrode 20 has a flat detection electrode flat portion 23 that extends along the first surface 16, and a first contact portion 24 that is recessed (concave) in the second stacking direction Z2 along the contact hole 6.

[0024] Similarly, when the common electrode 30 is formed on the first surface 16, a portion recessed in the second stacking direction Z2 is formed along the contact hole 6. Therefore, the common electrode 30 has a flat common electrode flat portion 33 that extends along the first surface 16 and a second contact portion 34 that is recessed (concave) in the second stacking direction Z2 along the contact hole 6. Hereinafter, the contact hole 6 in which the first contact portion 24 is arranged will be referred to as a first contact hole 7, and the contact hole 6 in which the second contact portion 34 is arranged will be referred to as a second contact hole 8.

[0025] Fig. 4 is a circuit diagram showing the circuit configuration of the detection device of embodiment 1. As shown in Fig. 4, transistors 40, gate lines 46, signal lines 47, reference potential lines 48, connection parts 50 (see Fig. 1), gate line driving circuits 51 (see Fig. 1), signal line selection circuits 52 (see Fig. 1), and common lines 53 (see Fig. 1) are formed inside the circuit-forming layer 12. Furthermore, a plurality of transistors 40, gate lines 46, signal lines 47, and reference potential lines 48 are formed on the circuit-forming layer 12 (first substrate 10).

[0026] The transistor 40 is a switching element. A plurality of transistors 40 are arranged in each individual detection region 5. As shown in FIG. 2, the transistor 40 includes a semiconductor layer 41, a gate insulating film 42, a gate electrode 43, a drain electrode 44, and a source electrode 45. An end of the source electrode 45 in the first stacking direction X1 is connected to a connection wiring 49. The connection wiring 49 extends in the planar direction (see FIG. 3) and is connected to the first contact portion 24 of the detection electrode 20.

[0027] As shown in FIG. 4, the gate line 46 extends in a first direction X. The multiple gate lines 46 are arranged in a second direction Y. As shown in FIG. 3, the gate line 46 has branch portions 46a extending in the second direction Y. The branch portions 46a are provided in each individual detection region 5. The gate line 46 is connected to each gate electrode 43 (see FIG. 2) of the multiple transistors 40 arranged in the first direction X via the branch portions 46a.

[0028] 4, the signal line 47 extends in the second direction Y. The signal lines 47 are arranged in the first direction X. The signal lines 47 are connected to the drain electrodes 44 (see FIG. 2) of the transistors 40 arranged in the second direction Y.

[0029] 4, the reference potential wiring 48 extends in the second direction Y. The multiple reference potential wirings 48 are arranged in the first direction X. Furthermore, as shown in FIG. 2, the reference potential wiring 48 is connected to the second contact portion 34 of the common electrode 30.

[0030] 1, the connection section 50, the gate line driving circuit 51, the signal line selection circuit 52, and the common wiring 53 are arranged in the peripheral region 4 of the circuit formation layer 12. The connection section 50 is for connecting to a driving IC (Integrated Circuit) arranged outside the detection device 100. The driving IC may be mounted as a COF (Chip On Film) on a flexible printed circuit board or a rigid board connected to the connection section 50. Alternatively, the driving IC may be mounted as a COG (Chip On Glass) in the peripheral region 4 of the first substrate 10.

[0031] The gate line driving circuit 51 is a circuit that drives the multiple gate lines 46 (see FIG. 4) based on various control signals from the driving IC. The gate line driving circuit 51 selects the multiple gate lines 46 sequentially or simultaneously, and supplies gate driving signals to the selected gate lines 46.

[0032] The signal line selection circuit 52 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines 47 (see FIG. 4). The signal line selection circuit 52 is, for example, a multiplexer. The signal line selection circuit 52 connects the selected signal line 47 to the driving IC based on a selection signal supplied from the driving IC.

[0033] The common wiring 53 is connected to the driving IC via the connection portion 50, and a constant amount of current is supplied from the driving IC. The common wiring 53 extends along the peripheral region in a ring shape. The reference potential wiring 48 is connected to the common wiring 53. This allows a constant amount of current to be supplied to the common electrode 30.

[0034] As shown in FIG. 2, the spacer 60 is a pillar protruding from the first substrate 10 in the first stacking direction Z1. The spacer 60 of this embodiment is made of an organic material and has insulating properties. Note that the spacer of the present disclosure is not limited to an organic material as long as it has insulating properties. The spacer 60 separates the first substrate 10 and the sensor layer 70 from each other in the stacking direction. In other words, a gap (space) S is formed between the first substrate 10 and the sensor layer 70. Note that the gap S of this embodiment contains air. Therefore, the gap S of this embodiment is an air gap.

[0035] A plurality of spacers 60 are formed. The plurality of spacers 60 include a first spacer 61 formed on a surface of the detection electrode 20 in the first stacking direction Z1 and a second spacer 62 formed on a surface of the common electrode 30 in the first stacking direction Z1.

[0036] The first spacer 61 overlaps with the first contact hole 7 in a plan view. That is, the first spacer 61 is formed only on the first contact portion 24. In other words, the first spacer 61 is not formed on the detection electrode flat portion 23 of the detection electrode 20.

[0037] The second spacer 62 overlaps with the second contact hole 8 in a plan view. That is, the second spacer 62 is formed only in the second contact portion 34. In other words, the second spacer 62 is not formed on the common electrode flat portion 33 of the common electrode 30.

[0038] As shown in FIG. 2 , the sensor layer 70 includes a main body portion 71 and conductive particles (hereinafter referred to as conductive particles 72) dispersed within the main body portion 71. The main body portion 71 is formed of a deformable and highly insulating material, such as silicone rubber. The conductive particles 72 are spaced apart from one another within the main body portion 71. When no pressure is applied to the sensor layer 70 and the main body portion 71 is not deformed, the resistance of the sensor layer 70 is high. On the other hand, when pressure is applied to the sensor layer 70 and the main body portion 71 is deformed, the conductive particles 72 come into contact with or are close to each other, thereby reducing the resistance of the sensor layer 70. Furthermore, the sensor layer 70 is sized to cover at least the entire detection region 3. In the present disclosure, the sensor layer 70 may or may not be bonded to the end of the spacer 60 in the first stacking direction Z1.

[0039] The protective layer 80 is formed of an elastically deformable and insulating material such as rubber or resin. The surface of the protective layer 80 in the first stacking direction serves as the detection surface 1. The sensor layer 70 is bonded to the surface of the protective layer 80 in the second stacking direction. In addition, the integrated sensor layer 70 and protective layer 80 are bonded and integrated with the first substrate 10 via a frame-shaped frame portion (not shown) in an area overlapping the peripheral region 4.

[0040] 5 is a cross-sectional view schematically illustrating a state in which pressure is applied to the detection device of embodiment 1. Next, an example of the operation of the detection device 100 will be described. As shown in FIG. 5, when pressure F1 is applied to the detection surface 1, the protective layer 80 and the sensor layer 70 in the individual detection region 5 to which pressure F1 is applied are deformed in the second stacking direction Z2. Then, the sensor layer 70 comes into contact with the detection electrode 20 and the common electrode 30, respectively.

[0041] As a result, the sensor layer 70 receives a reaction force F2 from the detection electrode 20 and the common electrode 30, which it comes into contact with. In other words, a compressive load due to the pressure F1 and the reaction force F2 acts on the sensor layer 70. As a result, the thickness H of the main body 71 of the sensor layer 70 in the stacking direction decreases. As a result, many conductive particles 72 come into contact with or are close to each other, and the resistance value of the sensor layer 70 decreases. Then, a current flows from the common electrode 30 to the detection electrode 20 via the sensor layer 70 (see arrow A in FIG. 5).

[0042] Furthermore, as the deformation amount of the main body portion 71 increases, the number of conductive particles 72 in contact with or adjacent to the main body portion 71 increases, further reducing the resistance value of the sensor layer 70. Therefore, the current flowing through the detection electrode 20 increases. Therefore, the current value input to the detection electrode 20 increases in proportion to the input pressure. Furthermore, the electrical signal (current value) input to the detection electrode 20 is output via a signal line. Then, the load input to the individual detection region 5 is calculated based on the magnitude of the current value. Note that, although the current value input to the detection electrode 20 in this embodiment is proportional to the magnitude of the input pressure, the current value input to the detection electrode 20 may also increase as the input pressure increases, and the present disclosure is not limited to the examples described in the embodiments.

[0043] Fig. 6 is a cross-sectional view schematically illustrating the state immediately after the pressure applied to the detection device of embodiment 1 is released. As shown in Fig. 6, when the applied pressure F1 is released, the sensor layer 70 and the protective layer 80 return to their original shapes. That is, a portion of the sensor layer 70 that was in contact with the detection electrode 20 and the common electrode 30 moves in the first stacking direction Z1 (see arrow B in Fig. 6), and the thickness H of the main body portion 71 in the stacking direction also returns to its original thickness.

[0044] Here, it takes time for the thickness H of the main body portion 71 to return to its original thickness. This is because it takes time for the stress acting on the main body portion 71 to disappear. Therefore, immediately after the input of the pressure F1 is released, there are many conductive particles 72 in contact or proximity, and the resistance value of the sensor layer 70 has not returned to its original value (high resistance value). For this reason, if the sensor layer 70 is in contact with the detection electrode 20 and the common electrode 30 immediately after the input of the pressure F1 is released, a current flows through the detection electrode 20, and the pressure F1 is detected.

[0045] On the other hand, in this embodiment, when the input of the pressure F1 is released, the sensor layer 70 moves in the first stacking direction Z1. That is, when the input of the pressure F1 is released, the sensor layer 70 loses electrical connection between the detection electrode 20 and the common electrode 30. Therefore, no current flows through the detection electrode 20, and the pressure F1 is not detected.

[0046] As described above, according to the detection device 100 of this embodiment, the electrical connection between the detection electrode 20 and the common electrode 30 (contact of the sensor layer 70) is released before the resistance value of the sensor layer 70 returns to its original value. Therefore, detection by the detection electrode 20 becomes unpressurized more quickly (early) than in a detection device in which the gap S is not formed (a detection device in which the sensor layer is always in contact with both the common electrode and the detection electrode).

[0047] Furthermore, the spacers 60 (first spacers 61 and second spacers 62) of this embodiment are formed to overlap the first contact portion 24 and the second contact portion 34. Here, the first contact portion 24 (or the second contact portion 34) is concave and therefore unlikely to come into contact with the sensor layer 70. Alternatively, even if the sensor layer 70 comes into contact with the first contact portion 24 (or the second contact portion 34), there is a possibility that the sensor layer 70 will not deform as when it comes into contact with the detection electrode flat portion 23. In other words, the first contact portion 24 of the detection electrode 20 is a region where pressure cannot be detected with high accuracy, and the detection electrode flat portion 23 is a more useful region. Similarly, the second contact portion 34 of the common electrode 30 is a region where pressure cannot be detected with high accuracy, and the common electrode flat portion 33 is a more useful region.

[0048] As described above, in this embodiment, the first spacer 61 and the second spacer 62 are not formed on the detection electrode flat portion 23 and the common electrode flat portion 33. Therefore, a large range (area) of the detection electrode flat portion 23 and the common electrode flat portion 33 that can come into contact with the sensor layer 70 is ensured. In addition, the first spacer 61 or the second spacer 62 is formed on the first contact portion 24 and the second contact portion 34, preventing contact with the sensor layer 70. In other words, pressure is detected with high accuracy.

[0049] 7 is an enlarged view of two individual detection areas arranged on the first surface of the first substrate of the first embodiment. Note that part of the configuration of the first substrate 10 is not shown in FIG. 7. Next, the detection device 100 will be described in detail. In a plan view, the first contact hole 7 is arranged in the center of the individual detection area 5. Therefore, the first spacer 61 is also arranged in the center of the individual detection area 5.

[0050] The boundary line separating the individual detection regions 5 in the second direction Y is referred to as the first boundary line M1. The boundary line separating the individual detection regions 5 in the first direction X is referred to as the second boundary line M2. In plan view, the gate line 46 overlaps with the first boundary line M1. In addition, in plan view, the reference potential wiring 48 overlaps with the second boundary line M2.

[0051] The second contact holes 8 are arranged in the portions where the gate lines 46 and the reference potential wiring 48 overlap in plan view. That is, the second contact holes 8 and the second spacers 62 are arranged at each of the four corners of the individual detection region 5. Therefore, the second spacers 62 are provided at the portions of the individual detection region 5 that are farthest from the first spacers 61. Furthermore, the distances between the central axes of one first spacer 61 and the four second spacers 62 are equal.

[0052] Furthermore, when the distance between the central axis of the first spacer 61 and the central axis of the second spacer 62 is r, the distance R between the central axes of adjacent first spacers 61 in the first direction X or the second direction Y is √2×r (R=√2×r). Therefore, the distance r from the central axis of one first spacer 61 to the central axis of the second spacer 62 and the distance R to the central axis of the adjacent first spacer 61 are different.

[0053] The first spacer 61 has a regular octagonal shape in a plan view. That is, the side surface of the first spacer 61 has four first opposing surfaces 63 facing the first direction X or the second direction Y, and four second opposing surfaces 64 facing in a direction (diagonal direction) at 45° to the first direction X (or the second direction Y). The first opposing surfaces 63 face the first spacer 61 of the adjacent individual detection area 5. The second opposing surfaces 64 face the second spacers 62 arranged at the corners of the individual detection area 5.

[0054] The second spacer 62 has a square shape in a plan view. The side surface of the second spacer 62 is composed of four opposing surfaces 65 that face in a direction (diagonal direction) at 45° to the first direction X (or the second direction Y). Therefore, the opposing surfaces 65 face the four neighboring first spacers 61.

[0055] Regarding the size (area) of the detection electrode flat portion 23, the width from the second opposing surface 64 of the first spacer 61 to the first surface exposed portion 17 (edge ​​portion 22 of the detection electrode 20) is W1. Moreover, the width from the first opposing surface 63 of the first spacer 61 to the first surface exposed portion 17 (edge ​​portion 22 of the detection electrode 20) is W1'. Moreover, the width W1 and the width W1' of the detection electrode flat portion 23 are the same (W1 = W1'). Therefore, the detection electrode flat portion 23 is rotationally symmetrical about the central axis of the first spacer 61.

[0056] Regarding the size (area) of the common electrode flat portion 33, the width W3 is the width from the opposing surface 65 of the second spacer 62 to the edge 32 of the opening 31 of the common electrode 30. Furthermore, the width W2 of the first surface exposed portion 17 is uniform in the circumferential direction. The first surface exposed portion 17 is located midway between the first spacer 61 and the second spacer 62, and is arranged at a position where the width W1 of the detection electrode flat portion 23 and the width W3 of the common electrode flat portion 33 are equal (W1 = W3). Therefore, when pressure is input between the first spacer 61 and the second spacer 62, the sensor layer 70 comes into contact with both the detection electrode flat portion 23 and the common electrode flat portion 33 in a balanced manner.

[0057] Furthermore, the width W4 of the portion of the common electrode flat portion 33 that is disposed between the first spacers 61 is the same as the width W3.

[0058] The detection device 100 of the first embodiment has been described above. In the first embodiment, one common electrode 30 is disposed across each individual detection region 5. However, a common electrode 30 may be provided for each individual detection region 5, or a common electrode 30 may be disposed across, for example, four individual detection regions 5. In the transistor 40 of the embodiment, the source electrode 45 is connected to the detection electrode 20 and the drain electrode 44 is connected to the signal line 47. However, in the present disclosure, the source electrode 45 may be connected to the signal line 47 and the drain electrode 44 may be connected to the detection electrode 20. The distance R between the first spacers 61 and the distance r between the first spacers 61 and the second spacers 62 are different from each other. That is, the intervals (periods) at which the spacers 60 are disposed are different. Therefore, in the present disclosure, the widths W1, W2, W3, and W4 may be appropriately changed. Regarding the shape of the spacers 60 in a plan view, they may be circular or other polygonal shapes in addition to the octagonal or square shapes shown in the embodiments.

[0059] Next, a description will be given of a detection device 100A according to the second embodiment. The following description will focus on the differences from the first embodiment.

[0060] (Embodiment 2) Fig. 8 is a schematic cross-sectional view of the detection device of embodiment 2. Fig. 9 is an enlarged view of a part of the first surface of the first substrate of embodiment 2, viewed from the sensor layer side. As shown in Fig. 8, the detection device 100A of embodiment 2 differs from embodiment 1 in that the common electrode 30 is disposed between the sensor layer 70 and the protective layer 80, rather than on the first surface 16 of the first substrate 10.

[0061] Accordingly, the first substrate 10 of the second embodiment differs from that of the first embodiment in that it does not have the reference potential wiring 48. The common electrode 30 is a solid film extending in the planar direction, and does not have an opening 31. In the second embodiment, a current is supplied from the common wiring 53 to the common electrode 30 by a wiring (not shown).

[0062] Furthermore, since there is no second contact portion (common electrode 30) on the first surface 16 of the first substrate 10, the detection device 100A of embodiment 2 differs from embodiment 1 in that it does not have a second spacer 62 or a second contact hole 8. Therefore, the gap S of embodiment 2 is formed by a plurality of first spacers 61.

[0063] 9, the detection electrode flat portion 23 of the detection electrode 20 is different from that of the first embodiment in that it is formed in a square shape in a plan view. The detection electrode flat portion 23 of the second embodiment has an area smaller than that of the individual detection region 5. Therefore, the detection electrodes 20 are spaced apart from the detection electrodes 20 of adjacent individual detection regions. A lattice-shaped first surface exposed portion 17 is arranged between the detection electrodes 20 adjacent to each other in the first direction X and the second direction Y.

[0064] As described above, according to the detection device 100A of the second embodiment, pressure is input to the detection surface 1, and the sensor layer 70 comes into contact with the detection electrode flat portion 23 of the detection electrode 20. Then, current flows from the common electrode 30 to the detection electrode 20 via the sensor layer 70. Thus, the pressure input to each individual detection region 5 can be detected. Furthermore, when the input of pressure is released, the sensor layer 70 moves in the first stacking direction Z1, as in the first embodiment. As a result, no current flows through the detection electrode 20, and no pressure is detected. Therefore, also in the second embodiment, detection by the detection electrode 20 reaches a pressure-free state more quickly (early) than in a detection device in which the gap S is not formed (a detection device in which the sensor layer is always in contact with both the common electrode and the detection electrode). [Explanation of symbols]

[0065] 1 Detection surface 3 Detection Area 4. Surrounding Areas 5 Individual detection areas 6 Contact holes 7. First Contact Hole 8. Second Contact Hole 10 First board 11 Base material 12 Circuit forming layer 15 Third insulating layer (organic insulating layer) 20 detection electrode 23 Flat part for detection electrode 24 First Contact Section 30 common electrode 31 Opening 33 Flat part for common electrode 34 Second contact part 40 transistors 46 gate line 47 Signal Line 48 Reference potential wiring 60 spacer 61 First spacer 62 Second spacer 70 Sensor Layer 71 Main body 72 Conductive particles 80 protective layer 100, 100A detector

Claims

1. a first substrate having a first surface formed of an organic insulating layer; a sensor layer facing the first surface; a plurality of spacers disposed between the first substrate and the sensor layer, the spacers forming a gap between the first surface and the sensor layer; Equipped with The first substrate is a detection electrode provided on the first surface; a common electrode on the first surface and disposed around the detection electrode; a transistor covered with the organic insulating layer; a gate line covered with the organic insulating layer and connected to a gate electrode of the transistor; a signal line covered with the organic insulating layer and connected to one of the source electrode and the drain electrode of the transistor; a reference potential wiring covered with the organic insulating layer; a first contact hole and a second contact hole formed on the first surface; and a part of the detection electrode is a first contact portion that is disposed in the first contact hole and is connected to the other of the source electrode and the drain electrode of the transistor; a part of the common electrode is a second contact portion that is disposed in the second contact hole and is connected to the reference potential wiring; The spacer is formed on each of the first contact portion and the second contact portion. Detection device.

2. The gap is an air gap. The detection device according to claim 1 .

3. The spacer is made of an organic material. The detection device according to claim 1 .

4. a plurality of the detection electrodes, a plurality of the transistors, a plurality of the gate lines, a plurality of the signal lines, and a plurality of the reference potential lines are provided; the plurality of detection electrodes are arranged in a first direction parallel to the first surface and in a second direction parallel to the first surface and intersecting the first direction; the plurality of transistors are arranged in the first direction and the second direction corresponding to the detection electrodes; the plurality of gate lines extend in the first direction and are arranged in the second direction; the plurality of signal lines extend in the second direction and are arranged in the first direction; The plurality of reference potential wirings extend in the second direction and are arranged in the first direction. The detection device according to claim 1 .

5. When viewed from the stacking direction in which the first substrate and the sensor layer are arranged, the reference potential wiring has the second contact hole provided in a portion where the reference potential wiring overlaps with the gate line, and is connected to the detection electrode. The detection device according to claim 4.

6. The first contact hole and the plurality of second contact holes arranged in the vicinity of the first contact hole are spaced apart from each other by the same distance. The detection device according to claim 5 .

7. The detection electrode is surrounded by the common electrode. The detection device according to claim 1 .

8. a first surface formed by an organic insulating layer and a first substrate; a sensor layer facing the first surface; a common electrode disposed on the opposite side of the first substrate from the sensor layer; a plurality of spacers disposed between the first substrate and the sensor layer, the spacers forming a gap between the first surface and the sensor layer; Equipped with The first substrate is a detection electrode provided on the first surface; a transistor covered with the organic insulating layer; a gate line covered with the organic insulating layer and connected to a gate electrode of the transistor; a signal line covered with the organic insulating layer and connected to one of the source electrode and the drain electrode of the transistor; a contact hole formed in the first surface; and a part of the detection electrode is a contact portion that is disposed in the contact hole and is connected to the other of the source electrode and the drain electrode of the transistor; The spacer is formed in the contact portion. Detection device.

9. The gap is an air gap. The detection device according to claim 8.

10. The spacer is made of an organic material. The detection device according to claim 8.

11. a plurality of the detection electrodes, a plurality of the transistors, a plurality of the gate lines, and a plurality of the signal lines are provided; the plurality of detection electrodes are arranged in a first direction parallel to the first surface and in a second direction parallel to the first surface and intersecting the first direction; the plurality of transistors are arranged in the first direction and the second direction corresponding to the detection electrodes; the plurality of gate lines extend in the first direction and are arranged in the second direction; The plurality of signal lines extend in the second direction and are arranged in the first direction. The detection device according to claim 8.

Images