Silicon compound and method of producing silicon-containing thin film using the same

Abstract

To provide a silicon compound, a method for producing the silicon compound, a composition for depositing a silicon-containing thin film comprising the silicon compound, and a method for producing a silicon-containing thin film using the composition.SOLUTION: A silicon compound is represented by the following Chemical Formula 1. (In Chemical Formula 1, A1 and A2 are each independently hydrogen, fluoro, C1-C7 alkyl, or -N(R11)(R12); L is C1-C7 alkylene; and R1 to R4 and R11 and R12 are each independently C1-C7 alkyl). A silicon-containing thin film produced using the silicon compound according to the present invention as a silicon precursor has both excellent chemical and thermal stability and a low dielectric constant, and can be usefully applied as an insulating film of a semiconductor device, in particular as a spacer in a semiconductor miniaturization process.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a silicon compound used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for producing a silicon-containing thin film using the same. [Background technology]

[0002] Silicon thin films, produced by various deposition methods such as atomic layer deposition (ALD) and chemical vapor deposition (CVD), are used in semiconductor technology as semiconductor substrates, diffusion masks, oxidation prevention films, dielectric films, insulating films, etc.

[0003] Meanwhile, it is very important that insulating films for spacers in semiconductor devices have a low dielectric constant and excellent etching resistance. Furthermore, in order to be applicable to actual processes, they must also satisfy conditions such as ease of processing, excellent chemical stability, and excellent thermal stability. Therefore, the required physical properties of insulating films for spacers to be applied to next-generation semiconductor devices are gradually becoming more stringent.

[0004] For this reason, research into lowering the dielectric constant of silicon thin films has been ongoing, but the results have either not been sufficiently low, or have resulted in reduced thermal stability and etching resistance, and low thin film formation speeds, resulting in reduced productivity. Another method proposed to simultaneously achieve low dielectric constants and etching resistance for silicon thin films is to dope fluorine (F) after the formation of a silicon-containing thin film. However, this method requires an additional fluorine doping step, making the process complicated, and doping occurs primarily around the surface of the thin film, with F doping difficult in regions deeper than the surface, resulting in reduced film quality. [Prior art documents] [Patent documents]

[0005] Prior document 1JP19960236521 Summary of the Invention [Problem to be solved by the invention]

[0006] One aspect of the present invention provides a silicon compound that is a high-quality low-k thin film precursor and a method for producing the same.

[0007] Another aspect of the present invention provides a method for producing a silicon-containing thin film, which allows for deposition of a thin film at a high deposition rate even under mild conditions, and can produce a high-quality thin film with a high yield. [Means for solving the problem]

[0008] One aspect of the present invention provides a silicon compound represented by the following Chemical Formula 1: [Chemical formula 1] [ka] (In the above Chemical Formula 1, A1 and A2 are each independently hydrogen, fluoro, C1-C7 alkyl, or —N(R 11 )(R 12 ) and L is C1-C7 alkylene; R1 to R4 and R 11 and R 12 are each independently C1-C7 alkyl.

[0009] A1 and A2 each independently represent hydrogen, fluoro, C1-C4 alkyl, or N(R 11 )(R 12 ) and L is C1-C4 alkylene, and R1 to R4 and R 11 and R 12 may each independently be C1-C4 alkyl.

[0010] According to one embodiment, the silicon compound may be represented by the following Formula 1-1 or 1-2. [Chemical formula 1-1] [ka] [Chemical formula 1-2] [ka] (In the above chemical formulas 1-1 and 1-2, L is C1-C7 alkylene; R1 to R4 are each independently C1-C7 alkyl; R5 and R6 are each independently hydrogen, C1-C7 alkyl, or -N(R 11 )(R 12 ) and R 11 and R 12 are each independently C1-C7 alkyl.

[0011] The L is C1-C4 alkylene, R1 to R4 are each independently C1-C4 alkyl, and R5 and R6 are each independently C1-C4 alkyl or —N(R 11 )(R 12 ) and R 11 and R 12 may each independently be C1-C4 alkyl.

[0012] According to one embodiment, the silicon compound may be selected from the following structures: [ka] JPEG2025141947000006.jpg26170JPEG2025141947000007.jpg19170

[0013] Yet another aspect of the present invention provides a method for producing a silicon compound, comprising the steps of: reacting a compound of Chemical Formula 2 below with compounds of Chemical Formulas 11 and 12 to produce a compound of Chemical Formula 3; and reacting the compound of Chemical Formula 3 with a fluorine source to produce a silicon compound of Chemical Formula 1-1. [Chemical formula 1-1] [ka] [Chemical formula 2] [ka] [Chemical formula 3] [ka] [Chemical formula 11] (R1)(R2)NH [Chemical formula 12] (R3)(R4)NH (In the above chemical formulas 1-1, 2, 3, 11 and 12, X is Cl or Br; R1 to R4 are each independently C1-C7 alkyl.

[0014] Yet another aspect of the present invention provides a method for producing a silicon compound, comprising the steps of: reacting a compound of the following Chemical Formula 2 with a fluorine source to produce a compound of the following Chemical Formula 4; and reacting the compound of the Chemical Formula 4 with compounds of the following Chemical Formulas 11 and 12 to produce a silicon compound of the following Chemical Formula 1-1. [Chemical formula 1-1] [ka] [Chemical formula 2] [ka] [Chemical formula 4] [ka] [Chemical formula 11] (R1)(R2)NH [Chemical formula 12] (R3)(R4)NH (In the above Chemical Formula 1-1, Chemical Formula 2, 4, 11 and 12, X is Cl or Br; R1 to R4 are each independently C1-C7 alkyl.

[0015] Yet another aspect of the present invention provides a composition for depositing a silicon-containing thin film, comprising a silicon compound.

[0016] In yet another aspect of the present invention, there is provided a method for producing a silicon-containing thin film using the silicon compound or a composition for depositing a silicon-containing thin film containing the silicon compound.

[0017] According to one embodiment, the silicon-containing thin film may be a fluorine- and silicon-containing thin film.

[0018] According to one embodiment, the silicon-containing thin film may contain 0.5 at % or more of fluorine. [Effects of the Invention]

[0019] The silicon compound according to one embodiment of the present invention has excellent thermal stability, and can be deposited at a high thin film deposition rate even at low temperatures. This allows for the production of high-quality silicon-containing thin films with high purity through a simple manufacturing process.

[0020] Furthermore, a silicon-containing thin film manufactured from a silicon compound according to one embodiment has excellent chemical and thermal stability as well as a very low dielectric constant, and is therefore expected to be useful as an insulating film for semiconductor devices, particularly as a spacer in semiconductor miniaturization processes. [Brief explanation of the drawings]

[0021] [Figure 1] 1 shows the results of TGA analysis of the silicon compounds produced in Examples 1 to 4. [Figure 2] 1 shows the results of DSC analysis of the silicon compounds produced in Examples 1 to 4. DETAILED DESCRIPTION OF THE INVENTION

[0022] Unless otherwise defined herein, all technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terms used in the description herein are merely for the purpose of effectively describing particular embodiments and are not intended to limit the present invention.

[0023] As used herein, the singular forms "a," "an," and "the" can be intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0024] Throughout this specification, "comprising," "comprising," "containing," or "having" an element means that it may further include other elements, but does not exclude unrecited elements, materials, or steps, unless specifically stated to the contrary.

[0025] Numerical ranges used herein include lower and upper limits, all values ​​within the range, increments logically derived from the form and width of the defined range, and all possible combinations of upper and lower limits of numerical ranges defined in different forms, including all values ​​bounded therein. Unless otherwise specified herein, values ​​outside the numerical ranges that may occur due to experimental error or rounding of values ​​are also included in the defined numerical ranges.

[0026] Unless otherwise defined herein, "about" is understood to mean a value within 30%, 25%, 20%, 15%, 10% or 5% of the specified value.

[0027] As used herein, the term "alkyl" refers to an organic radical derived from an aliphatic hydrocarbon by removal of one hydrogen, and can include both straight-chain and branched alkyls. The alkyl can have 1 to 7, specifically 1 to 5, and specifically 1 to 4 carbon atoms. Examples of straight-chain alkyls include methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, and n-heptyl, while examples of branched alkyls include, but are not limited to, isopropyl, sec-butyl, isobutyl, tert-butyl, isopentyl, 2-methylhexyl, 3-methylbutyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 2-methylhexyl, 3-methylhexyl, 4-methylhexyl, 5-methylhexyl, 2,3-dimethylbutyl, 2,3-dimethylpentyl, and 2,4-dimethylpentyl.

[0028] The present disclosure will now be described in detail, but by way of example only, and the present disclosure is not limited to the specific embodiments illustratively described.

[0029] One aspect of the present invention provides silicon compounds for use as precursors for high quality low dielectric silicon-containing thin films.

[0030] Specifically, the silicon compound according to one embodiment may be represented by the following Chemical Formula 1:

[0031] [Chemical formula 1] [ka]

[0032] (In the above Chemical Formula 1, A1 and A2 are each independently hydrogen, fluoro, C1-C7 alkyl, or —N(R 11 )(R 12 ) and L is C1-C7 alkylene; R1 to R4 and R 11 and R 12are each independently C1-C7 alkyl.

[0033] The silicon compound according to one embodiment has the structural feature of Formula 1, for example, a structure in which silicon atoms having at least one fluoro group and one dialkylamino group are connected by an alkylene group. Therefore, the silicon compound exists in a liquid state at room temperature and has excellent volatility and thermal stability. This allows for thin film deposition at a high thin film deposition rate even at low temperatures, and can provide a low-dielectric silicon-containing thin film with high purity and excellent durability.

[0034] As an example, A1 and A2 are each independently hydrogen, fluoro, C1-C4 alkyl, or N(R 11 )(R 12 ) and L is C1-C4 alkylene, and R1 to R4 and R 11 and R 12 may each independently be C1-C4 alkyl.

[0035] Specifically, the silicon compound according to one embodiment may be represented by the following Chemical Formula 1-1 or Chemical Formula 1-2.

[0036] [Chemical formula 1-1] [ka]

[0037] [Chemical formula 1-2] [ka]

[0038] (In the above chemical formulas 1-1 and 1-2, L is C1-C7 alkylene; R1 to R4 are each independently C1-C7 alkyl; R5 and R6 are each independently hydrogen, C1-C7 alkyl, or -N(R 11 )(R 12 ) and R 11 and R 12 are each independently C1-C7 alkyl.

[0039] For example, L is C1-C4 alkylene, R1 to R4 are each independently C1-C4 alkyl, and R5 and R6 are each independently C1-C4 alkyl or —N(R 11 )(R 12 ) and R 11 and R 12 may each independently be C1-C4 alkyl.

[0040] As an example, L may be methylene or ethylene.

[0041] For example, R1 to R4 may be the same as each other and may be C1-C4 alkyl.

[0042] As an example, the above-mentioned R 11 and R 12 are the same as each other and may be C1-C4 alkyl.

[0043] As an example, the R1 to R 14 and R 11 and R 12 are the same as each other and may be C1-C4 alkyl.

[0044] Specifically, the silicon compound represented by the chemical formula 1-2 can be represented by the following chemical formulas 1-3 to 1-5.

[0045] [Chemical formula 1-3] [ka]

[0046] [Chemical formula 1-4] [ka]

[0047] [Chemical formula 1-5] [ka]

[0048] (In the above chemical formulas 1-3 to 1-5, L is C1-C7 alkylene; R1 to R4 and R 11 and R 12 are each independently C1-C7 alkyl; R7 and R8 are each independently hydrogen or C1-C7 alkyl.

[0049] In one example, R7 and R8 are each independently C1-C4 alkyl.

[0050] In one example, R7 and R8 are the same as each other and are C1-C4 alkyl.

[0051] According to one embodiment, the silicon compound may be selected from the following structures, but is not limited thereto.

[0052] [ka] JPEG2025141947000021.jpg26170JPEG2025141947000022.jpg19170

[0053] Yet another aspect of the present invention provides a method for producing the silicon compound.

[0054] Hereinafter, a method for producing a silicon compound according to one embodiment will be described in detail. However, it goes without saying that other synthesis methods recognizable by those of ordinary skill in the art are also possible. The organic solvent used here is not limited, and the reaction time and temperature can also be changed within the scope of the invention.

[0055] According to one embodiment, the silicon compound represented by Formula 1-1 may be prepared by reacting a compound of Formula 2 with compounds of Formulas 11 and 12 to prepare a compound of Formula 3, and reacting the compound of Formula 3 with a fluorine source to prepare the silicon compound of Formula 1-1.

[0056] [Chemical formula 1-1] [ka]

[0057] [Chemical formula 2] [ka]

[0058] [Chemical formula 3] [ka]

[0059] [Chemical formula 11] (R1)(R2)NH

[0060] [Chemical formula 12] (R3)(R4)NH

[0061] (In the above Chemical Formula 1-1 and Chemical Formulas 2, 3, 11 and 12, X is Cl or Br; R1 to R4 are each independently C1-C7 alkyl.

[0062] In addition, according to one embodiment, the silicon compound represented by Chemical Formula 1-1 may be prepared by reacting a compound represented by Chemical Formula 2 below with a fluorine source to prepare a compound represented by Chemical Formula 4 below, and reacting the compound represented by Chemical Formula 4 with compounds represented by Chemical Formulas 11 and 12 below to prepare the silicon compound represented by Chemical Formula 1-1.

[0063] [Chemical formula 1-1] [ka]

[0064] [Chemical formula 2] [ka]

[0065] [Chemical formula 4] [ka]

[0066] [Chemical formula 11] (R1)(R2)NH

[0067] [Chemical formula 12] (R3)(R4)NH

[0068] (In the above Chemical Formula 1-1, Chemical Formula 2, 4, 11 and 12, X is Cl or Br; R1 to R4 are each independently C1-C7 alkyl.

[0069] In addition, according to one embodiment, the silicon compound of Formula 1-3 may be prepared by reacting a compound of Formula 5 with a fluorine source to prepare a compound of Formula 6, and reacting the compound of Formula 6 with compounds of Formulas 11 and 12 to prepare the silicon compound of Formula 1-3.

[0070] [Chemical formula 1-3] [ka]

[0071] [Chemical formula 5] [ka]

[0072] [Chemical formula 6] [ka]

[0073] [Chemical formula 11] (R1)(R2)NH

[0074] [Chemical formula 12] (R3)(R4)NH

[0075] (In the above chemical formulas 1-3, 5, 6, 11 and 12, X is Cl or Br; R1 to R4 are each independently C1-C7 alkyl; R7 and R8 are each independently hydrogen or C1-C7 alkyl.

[0076] In addition, according to one embodiment, the silicon compound of Formula 1-4 may be prepared by reacting a compound of Formula 7 below with a fluorine source to prepare a compound of Formula 8 below, and reacting the compound of Formula 8 with compounds of Formulas 11 to 13 below to prepare the silicon compound of Formula 1-4.

[0077] [Chemical formula 1-4] [ka]

[0078] [Chemical formula 7] [ka]

[0079] [Chemical formula 8] [ka]

[0080] [Chemical formula 11] (R1)(R2)NH

[0081] [Chemical formula 12] (R3)(R4)NH

[0082] [Chemical formula 13] (R 11 )(R 12 )NH

[0083] (In the above chemical formulas 1-4, 7, 8, 11 to 13, X is Cl or Br; R1~R4, R 11 and R 12 are each independently C1-C7 alkyl; R8 is hydrogen or C1-C7 alkyl.

[0084] In addition, according to one embodiment, the silicon compound of Formula 1-5 may be prepared by reacting a compound of Formula 2 below with a fluorine source to prepare a compound of Formula 4 below, and reacting the compound of Formula 4 with compounds of Formulas 11 to 13 to prepare the silicon compound of Formula 1-5.

[0085] [Chemical formula 1-5] [ka]

[0086] [Chemical formula 2] [ka]

[0087] [Chemical formula 4] [ka]

[0088] [Chemical formula 11] (R1)(R2)NH

[0089] [Chemical formula 12] (R3)(R4)NH

[0090] [Chemical formula 13] (R 11 )(R 12 )NH

[0091] In the above chemical formulas 1-5, 2, 4, 11 to 13, X is Cl or Br; R1~R4, R 11 and R 12 are each independently C1-C7 alkyl.

[0092] For example, the compounds represented by the formulas 11 and 12 may be the same compound.

[0093] For example, the compounds represented by the formulas 11 to 13 may be the same compound.

[0094] By way of example, the fluorine source may be selected from alkali metal fluorides such as LiF, KF, NaF, RbF, and CsF, or transition metal fluorides such as AgF, AgF2, ZnF2, CuF2, CuF2·H2O, NiF2, SnF2, InF3, ScF3, TiF3, MnF3, CoF3, CrF3, AuF3, FeF3, MnF3, BiF3, and SbF3, but is not limited thereto.

[0095] Yet another aspect of the present invention provides a composition for depositing a silicon-containing thin film, comprising the silicon compound.

[0096] According to one embodiment, a composition for depositing a silicon-containing thin film includes the silicon compound represented by Chemical Formula 1 as a precursor for depositing a thin film, and the content of the compound represented by Chemical Formula 1 in the composition may be within a range recognizable by those skilled in the art, taking into consideration the film formation conditions, the thickness of the thin film, the properties of the thin film, and the use of the thin film.

[0097] In yet another aspect of the present invention, there is provided a method for producing a silicon-containing thin film using a silicon compound represented by the following Chemical Formula 1 or a composition for depositing a silicon-containing thin film containing the same:

[0098] [Chemical formula 1] [ka]

[0099] (In the above Chemical Formula 1, L, R1 to R4, A1 and A2 are the same as defined in Chemical Formula 1.

[0100] According to one embodiment, a method for manufacturing a silicon-containing thin film can manufacture a high-quality silicon-containing thin film at a high deposition rate even at low temperature and low power by using the silicon compound represented by Chemical Formula 1 as a precursor.

[0101] Specifically, the silicon-containing thin film according to one embodiment may be a fluorine- and silicon-containing thin film, and the method for manufacturing the silicon-containing thin film according to one embodiment allows fluorine (F) from the silicon compound represented by Chemical Formula 1 to remain in the thin film, thereby providing a high-quality fluorine- and silicon-containing thin film with a low dielectric constant.

[0102] Specifically, the silicon-containing thin film according to one embodiment may contain fluorine in an amount of 0.5 at% or more, or 1.0 at% or more, or 1.5 at% or more, or 2.0 at% or more, or 2.5 at% or more, or 10 at% or less, or 9 at% or less, or 8 at% or less, or 7 at% or less.

[0103] The silicon-containing thin film according to one embodiment may be any thin film that can be manufactured within the scope of recognition by a person skilled in the art. Specifically, the silicon-containing thin film may be a silicon oxide film (SiO), a silicon nitride film (SiN), a silicon carbonitride film (SiCN), a silicon carbide film (SiC), a silicon fluoride oxide film (SiOF), a silicon fluoride carbide film (SiCF), a silicon fluoride carbonitride film (SiCNF), a silicon fluoride oxynitride film (SiONF), or the like. In addition, various high-quality thin films containing silicon or fluorine and silicon may be manufactured within the scope of recognition by a person skilled in the art.

[0104] The silicon-containing thin film according to one embodiment has excellent chemical and thermal stability and can be used in a variety of applications, such as insulating films, diffusion barriers, spacers, intermetal dielectrics, and passivation layers in the fabrication of electronic devices.

[0105] In one embodiment of the method for manufacturing a silicon-containing thin film, the silicon precursor and the reaction gas may be supplied together or independently. The silicon precursor and the reaction gas may be supplied continuously or discontinuously, and the discontinuous supply may include a pulsed supply.

[0106] For example, a method for manufacturing a silicon-containing thin film according to one embodiment includes the steps of: a) maintaining a temperature of a substrate mounted in a chamber at 100° C. or higher; b) contacting a substrate with a silicon compound or a silicon-containing thin film deposition composition according to an embodiment of the present invention and allowing it to be adsorbed onto the substrate; c) injecting a reaction gas onto the substrate on which the silicon-containing thin film deposition composition is adsorbed, thereby forming a silicon-containing thin film.

[0107] Specifically, the method for producing the silicon-containing thin film includes the steps of: a) maintaining a temperature of a substrate mounted in a chamber at 100° C. or higher; b) contacting a substrate with the silicon compound or the silicon-containing thin film deposition composition according to one aspect of the present invention and allowing it to be adsorbed onto the substrate; c) purging residual silicon compounds or residual film back-deposition compositions and by-products; d) injecting a reaction gas onto the substrate onto which the silicon compound or thin film deposition composition is adsorbed to form a silicon-containing thin film; e) purging residual reaction gases and by-products.

[0108] Further, as an example, the method for producing the silicon-containing thin film includes the steps of: maintaining the temperature of the substrate mounted in the chamber at 100°C or higher; The method may include depositing a silicon-containing thin film by simultaneously injecting the silicon compound of Formula 1 or a composition for depositing a silicon-containing thin film containing the silicon compound and a reaction gas.

[0109] In the method for manufacturing a silicon-containing thin film according to an embodiment, the deposition method of the thin film may be any method commonly used in the art, including, but not limited to, thermal chemical vapor deposition (TCVD), atomic layer deposition (ALD), chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), or plasma enhanced atomic layer deposition (PEALD). Specifically, atomic layer deposition (ALD) or thermal chemical vapor deposition (TCVD) may be used, but is not limited thereto.

[0110] The substrate is not particularly limited as long as it is one that is commonly used in the relevant field, and may be, for example, a substrate containing one or more semiconductor materials selected from the group consisting of Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC, InAs, and InP, an SOI (Silicon On Insulator) substrate, a quartz substrate, a glass substrate for a display, or a flexible plastic substrate such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), polycarbonate (PC), polyethersulfone (PES), or polyester.

[0111] In addition, the silicon-containing thin film may be formed directly on the substrate, or multiple conductive layers, dielectric layers, or insulating layers may be formed between the substrate and the silicon-containing thin film.

[0112] For example, the temperature of the substrate can be adjusted to, for example, 100 to 1,000°C, 300 to 1,000°C, or 500 to 1,000°C. Under these temperature conditions, fluorine (F) of the silicon compound represented by Chemical Formula 1 can remain in the thin film, thereby providing a high-quality fluorine- and silicon-containing thin film and a thin film with a lower dielectric constant.

[0113] For example, the reactive gas may be supplied after being activated by generating plasma at 50 to 1,000 W, or 100 to 800 W, or 400 to 600 W.

[0114] The type of the reactive gas is not particularly limited as long as it is commonly used in the field, but examples include oxygen (O), ozone (O), oxygen plasma, hydrogen (H), hydrogen plasma, water (H0), hydrogen peroxide (H0), nitrogen dioxide (NO), nitric oxide (NO), nitrous oxide (NO), ammonia (NH), carbon dioxide (CO), formic acid (HCOOH), acetic acid (CHCOOH), acetic anhydride ((CHCO)0), or a combination thereof. The purge gas may be nitrogen (N), argon (Ar), helium (He), or a combination thereof.

[0115] In one embodiment of the method for producing a silicon-containing thin film, deposition conditions can be adjusted depending on the structure or thermal properties of the desired thin film, and deposition conditions in one embodiment include the flow rate of the silicon precursor, the flow rate of the reactant gas and carrier gas, pressure, RF power, substrate temperature, etc. Non-limiting examples include the flow rate of the silicon precursor being 10-1000 cc / min, the carrier gas being 10-1000 cc / min, the flow rate of the reactant gas being 1-5000 cc / min, the pressure being 0.5-10 torr, and the RF power and substrate temperature being as described above.

[0116] The above-described embodiments will now be described in more detail with reference to examples, which are provided for illustrative purposes only and are not intended to limit the scope of the invention.

[0117] The physical properties of the examples were measured as follows.

[0118] 1) Thermal properties To measure the thermal stability, volatility, and decomposition temperature of the silicon compounds, thermogravimetric analysis (TGA, l81-II, LINSEIS) and differential scanning calorimeter (DSC) were performed.

[0119] 2) Thickness The thickness of the silicon-containing thin film was measured using an ellipsometer (OPTI-PROBE 2600, THERMAL-WAVE).

[0120] 3) Refractive index The refractive index of the deposited thin film was measured using an ellipsometer (Spectroscopic Ellipsometer, Elli-SE-Uam12, Ellipso Technology).

[0121] <Production of silicon compounds> [Example 1] Bis(difluoro-di-isopropylaminosilyl)methane [ka]

[0122] In an anhydrous and inert atmosphere, a flame-dried 1 L flask was equipped with a reflux apparatus and charged with 375 g (1.33 mol) of bis(trichlorosilyl)methane and 1713 g (19.88 mol) of n-hexane. The flask was cooled to below -20°C with stirring, and diisopropylamine was slowly added while maintaining the neon temperature below 0°C. After the diisopropylamine was added, the temperature was gradually raised to room temperature and stirred at 80°C for 6 hours. The reaction mixture was then filtered and the solvent was removed under reduced pressure to obtain 513 g (93.78% yield, 1.25 mol) of bis(dichloro-diisopropylamino)silylmethane.

[0123] In an anhydrous and inert atmosphere, a flame-dried 2 L flask was charged with 712 g (3.98 mol) of SbF and 718 g (9.95 mol) of n-pentane, and 513 g (1.24 mol) of the bis((dichlorodiisopropylamino)silyl)methane prepared above was slowly added at room temperature. After the addition, the mixture was stirred at room temperature for 3 hours. The reaction mixture was filtered, and the filtrate was purified under reduced pressure at 67-68 °C and 0.34 torr to obtain 321 g (0.927 mol) of the target compound, bis((difluoro-diisopropylamino)silyl)methane [Bis(difluoro-diisopropylaminosilyl)methane] (70% yield, 98.5% GC purity).

[0124] 1H NMR (CDCl3): 0.22ppm (m, 2H, Si-CH2-Si), 1.09ppm (d, 24H, Si-N[(CH)(CH3)2)]2), 3.05ppm (m, 4H, Si-N[(CH)(CH3)2)]2) 29 Si NMR (CDCl3): -37.66ppm (t, 2Si, Si-CH2-Si)

[0125] [Example 2] 1,4-difluoro-1,1,4-tris(dimethylamino)-1,4-disilapentane [ka]

[0126] In an anhydrous and inert atmosphere, 211 g (12.37 mol) of SbF32 and 2371 g (17.67 mol) of diethylene glycol dimethyl ether were placed in a flame-dried 5 L flask, and 1000 g (3.62 mol) of 1,1,1,4,4-pentachloro-1,4-disilapentane was slowly added dropwise at room temperature. The mixture was stirred for 3 hours until the reaction was complete. The reaction mixture was filtered, and the filtrate was fractionally distilled at 120-140 °C and 760 torr to obtain 462 g (2.38 mol) of 1,1,1,4,4-pentafluoro-1,4-disilapentane (65% yield).

[0127] In an anhydrous and inert atmosphere, 1987 g (5.02 mol) of 2.53 M n-BuLi and 2600 g (30.10 mol) of n-hexane were placed in a flame-dried 10 L flask and cooled to -20°C. Then, while maintaining the temperature below 0°C, 508 g (5.02 mol) of dimethylamine was gradually added to prepare lithium dimethylamine salt.

[0128] In an anhydrous and inert atmosphere, 462 g (2.38 mol) of the 1,1,1,4,4-pentafluoro-1,4-disilapentane prepared above and 2160 g (25.08 mol) of n-hexane were placed in a flame-dried 10 L flask and cooled to -20°C. Then, while maintaining the temperature below -10°C, the lithium dimethylamine salt prepared above was slowly added. After the addition was completed, the temperature of the reaction mixture was gradually raised to room temperature and stirred for 6 hours. After the reaction was completed, the reaction mixture was filtered and the solvent was removed from the filtrate under reduced pressure. The filtrate was then purified under reduced pressure at 42°C and 0.40 torr to obtain 522 g of 1,4-difluoro-1,1,4-trisdimethylamino-1,4-disilapentane (1.51 mol, yield 60%).

[0129] 1 H NMR(C6D6): 0.22ppm(d, 3H, Si-CH3), 0.75ppm(m, 4H, Si-CH2-CH2-Si), 2.37ppm(d, 6H, CH3-Si-N[CH3]2), 2.31ppm(s, 6H, F-CH3-Si-{N[CH3]2}), 2.37ppm (s, 12H, F-Si-{N[CH3]2}2).

[0130] [Example 3] Bis((fluoromethyl-di-methylamino)silyl)ethane [ka]

[0131] In an anhydrous and inert atmosphere, 405g (15.62mol) of LiF and 1351g (18.74mol) of THF were placed in a flame-dried 5L flask, and 800g (3.21mol) of bis((dichloromethyl)silyl)methane was slowly added dropwise at room temperature. After stirring for 3 hours, the reaction was completed. The reaction mixture was filtered, and the filtrate was separated and purified by fractional distillation at 68°C and 760torr to obtain 416g (2.19mol) of bis((difluoromethyl)silyl)methane (70% yield).

[0132] In an anhydrous and inert atmosphere, 1840 g (4.60 mol) of 2.5 M n-BuLi and 2300 g (18.40 mol) of n-hexane were placed in a flame-dried 10 L flask and cooled to -20°C. Then, while maintaining the temperature below 0°C, 207 g (4.60 mol) of dimethylamine was gradually added to prepare lithium dimethylamine salt.

[0133] In an anhydrous and inert atmosphere, 416 g (2.19 mol) of the bis(difluoromethylsilyl)methane prepared above and 1700 g (21.89 mol) of n-hexane were placed in a flame-dried 10 L flask and cooled to -20 °C. Then, 235 g (4.60 mol) of the lithium dimethylamine salt prepared above was gradually added while maintaining the temperature at -10 °C or below. After the addition was complete, the reaction mixture was gradually warmed to room temperature and stirred for 6 hours. The reaction mixture was filtered, and the solvent was removed from the filtrate under reduced pressure. The filtrate was then purified under reduced pressure at 72 °C and 6.0 torr to obtain 300 g (1.25 mol) of bis(fluorodimethylaminomethylsilyl)ethane (53% yield).

[0134] 1 H NMR (C6D6): 0.08ppm (d, 6H, Si-CH3), 0.64ppm (S, 4H, Si-CH2-CH2-Si), 2.36ppm (d, 12H, Si-{N[CH3]2}2)

[0135] [Example 4] 1,4-difluoro-1,1,4,4-tetra(dimethlylamino)-1,4-disilabutane [ka]

[0136] In an anhydrous and inert atmosphere, 1200 g (26.62 mol) of LiF and 1874 g (13.97 mol) of diethylene glycol dimethyl ether were placed in a flame-dried 5 L flask, and 790 g (2.66 mol) of bis(trichlorosilyl)ethane was slowly added dropwise at room temperature. After stirring for 3 hours, the reaction mixture was filtered and fractionally distilled at 60 °C and 760 torr to obtain 370 g (1.86 mol) of bis(trifluorosilyl)ethane (70% yield).

[0137] In an anhydrous and inert atmosphere, 2982 g (7.45 mol) of 2.5 M n-BuLi and 2570 g (29.82 mol) of n-hexane were placed in a flame-dried 10 L flask and cooled to -20°C. Then, while maintaining the temperature below 0°C, 336 g (7.45 mol) of dimethylamine was gradually added to prepare lithium dimethylamine salt.

[0138] In an anhydrous and inert atmosphere, 370 g (1.86 mol) of bis(trifluorosilyl)ethane prepared above and 1,300 g (15 mol) of n-hexane were placed in a flame-dried 10 L flask and cooled to -20 °C. Then, 336 g (7.45 mol) of the lithium dimethylamine salt prepared above was gradually added while maintaining the temperature below -10 °C. After the addition was completed, the reaction mixture was gradually heated to room temperature and stirred for 6 hours. After filtering the reaction mixture, the solvent was removed from the filtrate under reduced pressure. The filtrate was purified under reduced pressure at 58 °C and 0.3 torr to obtain 417 g (1.39 mol) of 1,4-difluoro-1,1,4,4-tetra-dimethylamino-1,4-disilabutane (yield: 75%).

[0139] 1 H NMR (C6D6): 0.65ppm (S, 4H, Si-CH2-CH2-Si), 2.38ppm (d, 24H, (Si-{N[CH3]2}2)2)

[0140] [Example 5] Bis(difluoro-di-isopropylaminosilyl)methane

[0141] Under an anhydrous and inert atmosphere, a flame-dried 1 L flask was equipped with a reflux apparatus and charged with 375 g (1.33 mol) of bis(trichlorosilyl)methane and 1713 g (19.88 mol) of n-hexane. The mixture was then cooled to below -20 °C with stirring, and diisopropylamine was slowly added while maintaining the neon temperature below 0 °C. After the diisopropylamine was added, the mixture was gradually heated to room temperature and stirred at 80 °C for 6 hours. After the reaction was complete, the reaction mixture was filtered and the solvent was removed under reduced pressure to obtain 513 g of bis(dichlorodiisopropylamino)silyl)methane (Bis(dichloro-diisopropylamino)silyl)methane (93.78% yield, 1.25 mol).

[0142] In an anhydrous and inert atmosphere, 290 g (7.96 mol) of LiF and 556 g (10.64 mol) of acetonitrile (CHCN) or 510 g (7.03 mol) of THF were placed in a flame-dried 2 L flask, and 513 g (1.24 mol) of the bis((dichlorodiisopropylamino)silyl)methane [Bis(dichloro-diisopropylaminosilyl)methane] prepared above was slowly added at room temperature. After the addition, the mixture was stirred at 80 °C for 6 hours. After the reaction was completed, the reaction mixture was filtered, and the solvent was removed under reduced pressure. The filtrate was then dried under reduced pressure at 67-68 °C and 0.34 torr to obtain 229 g of the target compound, bis((difluorodiisopropylamino)silyl)methane [Bis(difluoro-diisopropylaminosilyl)methane] (50% yield).

[0143] 1 H NMR (CDCl3): 0.22ppm (m, 2H, Si-CH2-Si), 1.09ppm (d, 24H, Si-N[(CH)(CH3)2)]2), 3.05ppm (m, 4H, Si-N[(CH)(CH3)2)]2) 29Si NMR (CDCl3): -37.66ppm (t, 2Si, Si-CH2-Si)

[0144] [Example 6] Bis(difluoro-di-isopropylaminosilyl)methane [ka]

[0145] In an anhydrous and inert atmosphere, 3973 g (5.44 mol) of SbF and 1043 g (7.78 mol) of diethylene glycol dimethyl ether were placed in a flame-dried 1 L flask, and 440 g (1.56 mol) of bis(trichlorosilyl)methane was slowly added dropwise at room temperature. After stirring for 6 hours at room temperature, the mixture was simply distilled at 145 °C and 760 torr to obtain 160 g of bistrifluorosilylmethane (56% yield).

[0146] In an anhydrous and inert atmosphere, 103 g (1.02 mol) of diisopropylamine and 440 g (6.10 mol) of n-pentane were placed in a flame-dried 1 L flask and cooled to below -20°C. Then, 403 g (1.02 mol) of 2.53 M n-BuLi was slowly added dropwise to prepare lithium diisopropylamine salt.

[0147] In an anhydrous and inert atmosphere, 160 g (0.87 mol) of the bis(trifluorosilyl)methane prepared above and 400 g (5.22 mol) of dimethoxymethane were placed in a flame-dried 1 L flask and cooled to -20 °C. The lithium diisopropylamine salt prepared above was then slowly added while maintaining the temperature below 0 °C. After the addition was completed, the temperature was gradually raised to room temperature and stirred at room temperature for 6 hours. After the reaction was completed, the reaction mixture was filtered, and the resulting filtrate was subjected to solvent removal under reduced pressure. The filtrate was then purified under reduced pressure at 67-68 °C and 0.34 torr to obtain 375 g of bis(difluorodiisopropylamino)silyl)methane (50% yield, 1.08 mol).

[0148] 1 H NMR (CDCl3): 0.22ppm (m, 2H, Si-CH2-Si), 1.09ppm (d, 24H, Si-N[(CH)(CH3)2)]2), 3.05ppm (m, 4H, Si-N[(CH)(CH3)2)]2) 29 Si NMR (CDCl3): -37.66ppm (t, 2Si, Si-CH2-Si)

[0149] Figures 1 and 2 show the results of thermogravimetry (TGA) and differential scanning calorimetry (DSC) analysis of the silicon compounds obtained in Examples 1 to 4. Referring to Figure 1, it can be seen that all of the compounds in the examples have a single evaporation step at about 200 to 300°C, leaving little residue and exhibiting fast evaporation characteristics, and it can be seen that all of the silicon compounds in the examples of the present invention have excellent thermal stability.

[0150] <Silicon-containing thin film deposition> [Example 7] Thermal Chemical Vapor Deposition (TCVD) Using the Silicon Compound of Example 1 In a conventional thermal chemical vapor deposition (TCVD) apparatus, thin film evaluation was carried out at 900°C using bis(difluoro-di-isopropylaminosilyl)methane, the silicon compound obtained in Example 1, as the silicon precursor for forming a silicon oxide film. Oxygen was used as the reactive gas, and argon was used as the base gas.

[0151] The temperature of the silicon substrate was set to 900°C, and the silicon precursor was filled into a stainless steel bubbler vessel and maintained at 120°C. First, the silicon precursor vaporized in the stainless steel bubbler vessel was transferred to the silicon substrate for 5 minutes using 100 sccm of argon gas as a transfer gas, and was adsorbed onto the silicon substrate. At the same time, 2000 sccm of oxygen was flowed as a reaction gas to form a silicon oxide film.

[0152] Table 1 below shows the specific conditions for depositing the silicon oxide film, and the thickness, growth rate, and refractive index of the deposited silicon oxide film were measured and are shown in Table 2 below.

[0153] [Table 1]

[0154] [Table 2]

[0155] [Example 8] Thermal Chemical Vapor Deposition (TCVD) Using the Silicon Compound of Example 2 Using a conventional thermal chemical vapor deposition (TCVD) apparatus, 1,4-difluoro-1,1,4-tris(dimethylamino)-1,4-disilapentane, the silicon compound obtained in Example 2, was used as the silicon precursor for forming a silicon oxide film, and thin film evaluation was carried out at 900°C. Oxygen was used as the reactive gas, and argon was used as the base gas.

[0156] The temperature of the silicon substrate was set to 630-900°C, and the silicon precursor was filled into a stainless steel bubbler vessel and maintained at 70-100°C. First, the silicon precursor vaporized in the stainless steel bubbler vessel was transferred to the silicon substrate for 5-10 minutes using 100 sccm of argon gas as a transfer gas, and was adsorbed onto the silicon substrate. At the same time, 2000 sccm of oxygen was flowed as a reaction gas to form a silicon oxide film.

[0157] Table 3 below shows the specific conditions for depositing the silicon oxide film, and the thickness, growth rate, and refractive index of the deposited silicon oxide film were measured and are shown in Table 4 below.

[0158] [Table 3]

[0159] [Table 4]

[0160] [Example 9] Atomic layer deposition (ALD) using the silicon compound of Example 2 Using a conventional atomic layer deposition (ALD) apparatus, 1,4-difluoro-1,1,4-tirs(dimethylamino)-1,4-disilapentane, the silicon compound obtained in Example 2, was used as the silicon precursor for forming a silicon oxide film. Thin film evaluation was carried out at 630°C, using oxygen as the reactive gas and argon as the purge gas.

[0161] The silicon substrate was heated to 630°C, and the silicon precursor was loaded into a stainless steel bubbler vessel and maintained at 100°C. First, the silicon precursor vaporized in the stainless steel bubbler vessel was transferred to the silicon substrate using 100 sccm of argon gas as a transfer gas for 5 seconds, allowing it to be adsorbed onto the silicon substrate. Second, 1,000 sccm of argon gas was used for approximately 10 seconds to remove any unadsorbed silicon precursor. Third, 2,000–4,000 sccm of oxygen was flowed as a reaction gas for 5–20 seconds, or 2,000 sccm of oxygen for 5 seconds to form a silicon oxide film. Finally, 1,000 sccm of argon gas was used for approximately 10 seconds to remove reaction byproducts and residual reaction gas. This process constituted one cycle, and the specified cycle was repeated to form a silicon oxide film.

[0162] Table 5 below shows a specific silicon oxide film deposition method, and the thickness, growth rate, and refractive index of the deposited silicon oxide film were measured and are shown in Table 6 below.

[0163] [Table 5]

[0164] [Table 6]

[0165] Using an X-ray photoelectron spectrometer, the content of each atom in the silicon oxide film deposited at 630°C was analyzed and summarized in Table 7 below. As a result, in addition to the SiOx thin film, the composition of C, N, and F was confirmed.

[0166] [Table 7]

[0167] [Example 10] Thermal chemical vapor deposition (TCVD) using the silicon compound of Example 3 Using a conventional thermal chemical vapor deposition (TCVD) apparatus, the silicon compound bis(difluoro-dimethylamino)silyl)ethane obtained in Example 3 was used as the silicon precursor for forming a silicon oxide film, and thin film evaluation was carried out at temperatures between 630 and 900°C. Oxygen was used as the reactive gas, and argon was used as the base gas.

[0168] The silicon substrate was set at 630°C, and the silicon precursor was filled in a stainless steel bubbler vessel and maintained at 84°C. First, the silicon precursor vaporized in the stainless steel bubbler vessel was transferred to the silicon substrate for 5 minutes using 100 sccm of argon gas as the transfer gas, and allowed to adsorb onto the silicon substrate. At the same time, oxygen at 2000-4000 sccm or oxygen at 4000 sccm and hydrogen at 2000 sccm was flowed as the reaction gas to form a silicon oxide film.

[0169] Table 8 below shows the specific conditions for depositing the silicon oxide film, and the thickness, growth rate, and refractive index of the deposited silicon oxide film were measured and are shown in Table 9 below.

[0170] [Table 8]

[0171] [Table 9]

[0172] [Example 11] Atomic layer deposition (ALD) using the silicon compound of Example 3 Using a conventional atomic layer deposition (ALD) apparatus, the silicon compound bis(difluoro-dimethylamino)silyl)ethane obtained in Example 3 was used as the silicon precursor for forming a silicon oxide film, and thin film evaluation was carried out at 630°C. Oxygen was used as the reactive gas, and argon was used as the purge gas.

[0173] The silicon substrate was heated to 630°C, and the silicon precursor was charged into a stainless steel bubbler vessel and maintained at 84°C. First, the silicon precursor vaporized in the stainless steel bubbler vessel was transferred to the silicon substrate using 100 sccm of argon gas as a transfer gas for 1-5 seconds, allowing it to be adsorbed onto the silicon substrate. Second, 1,000 sccm of argon gas was used for approximately 10 seconds to remove any unadsorbed silicon precursor. Third, 2,000 sccm of oxygen was flowed as a reactive gas for 1-5 seconds to form a silicon oxide film. Finally, 1,000 sccm of argon gas was used for approximately 10 seconds to remove reaction byproducts and residual reactive gas. This process constituted one cycle, and the predetermined cycle was repeated to form a silicon oxide film.

[0174] Table 10 below shows a specific method for depositing a silicon oxide film, and the thickness, growth rate, and refractive index of the deposited silicon oxide film were measured and are shown in Table 11 below.

[0175] [Table 10]

[0176] [Table 11]

[0177] Using an X-ray photoelectron spectrometer, the content of each atom in the silicon oxide film deposited at 630°C was analyzed and summarized in Table 12 below. As a result, the composition of the SiOx thin film, as well as C, N, and F, was confirmed.

[0178] [Table 12]

[0179] [Example 12] Atomic layer deposition (ALD) using the silicon compound of Example 4 Using a conventional atomic layer deposition (ALD) apparatus, the silicon compound obtained in Example 4, 1,4-difluoro-1,1,4,4-tetra(dimethlylamino)-1,4-disilabutane, was used as the silicon precursor for forming a silicon oxide film, and thin film evaluation was carried out at 630°C. Oxygen and hydrogen were used as the reaction gases, and argon was used as the purge gas.

[0180] The silicon substrate was heated to 630°C, and the silicon precursor was charged into a stainless steel bubbler vessel and maintained at 80-100°C. First, the silicon precursor vaporized in the stainless steel bubbler vessel was transferred to the silicon substrate using 100 sccm argon gas as a transfer gas for 5-20 seconds, allowing it to be adsorbed onto the silicon substrate. Second, 1,000 sccm argon gas was used for approximately 10 seconds to remove any unadsorbed silicon precursor. Third, a silicon oxide film was formed by flowing 800-4,000 sccm oxygen for 2.5-10 seconds or 4,000 sccm oxygen and 5-20 sccm hydrogen as a reactant gas for 5 seconds. Finally, 1,000 sccm argon gas was used for approximately 10 seconds to remove reaction byproducts and residual reactant gas. This process constituted one cycle, and the specified cycle was repeated to form a silicon oxide film.

[0181] Table 13 below shows the specific conditions for depositing the silicon oxide film, and the thickness, growth rate, and refractive index of the deposited silicon oxide film were measured and are shown in Tables 14 and 15 below.

[0182] [Table 13]

[0183] [Table 14]

[0184] [Table 15]

[0185] Using an X-ray photoelectron spectrometer, the content of each atom in the silicon oxide film deposited at 630°C was analyzed and summarized in Table 16 below. As a result, in addition to the SiOx thin film, the composition of C, N, and F was confirmed.

[0186] [Table 16]

[0187] As described above, the present invention has been described using specific matters and limited examples and comparative examples, but these are provided to facilitate a more general understanding of the present invention, and the present invention is not limited to the above examples. A person having ordinary skill in the art to which the present invention pertains can make various modifications and variations from such descriptions.

[0188] Therefore, the concept of the present invention should not be limited to the above-described embodiments, and it can be said that not only the scope of the claims described below, but also all modifications that are equivalent to or equivalent to the scope of the claims fall within the scope of the concept of the present invention.

Claims

1. A silicon compound represented by the following chemical formula 1. [Chemical formula 1] 【Chemical 1】 (In the above Chemical Formula 1, A １ and A ２ are each independently hydrogen, fluoro, C1-C7 alkyl, or —N(R １１ ) (R １２ ) and L is C1-C7 alkylene; R １ ~R ４ and R １１ and R １２ are each independently C1-C7 alkyl.

2. The above A １ and A ２ are each independently hydrogen, fluoro, C1-C4 alkyl, or N(R １１ ) (R １２ ), L is C1-C4 alkylene, and R １ ~R ４ and R １１ and R １２ is each independently a C1-C4 alkyl.

3. The silicon compound according to claim 1, represented by the following chemical formula 1-1 or 1-2: [Chemical formula 1-1] 【Chemistry 2】 [Chemical formula 1-2] 【Chemistry 3】 (In the above chemical formulas 1-1 and 1-2, L is C1-C7 alkylene; R １ ~R ４ are each independently C1-C7 alkyl; R ５ and R ６ are each independently hydrogen, C1-C7 alkyl, or —N(R １１ ) (R １２ ) and R １１ and R １２ are each independently C1-C7 alkyl.

4. L is C1-C4 alkylene, and R １ ~R ４ are each independently C1-C4 alkyl, and R ５ and R ６ are each independently C1-C4 alkyl or —N(R １１ ) (R １２ ) and R １１ and R １２ is each independently a C1-C4 alkyl.

5. The silicon compound of claim 1 , wherein the silicon compound is selected from the following structures: 【Chemistry 4】 【change】 【change】

6. A method for producing a silicon compound, comprising the steps of: reacting a compound of the following chemical formula 2 with compounds of the following chemical formulas 11 and 12 to produce a compound of the following chemical formula 3; and reacting the compound of the following chemical formula 3 with a fluorine source to produce a silicon compound of the following chemical formula 1-1. [Chemical formula 1-1] 【Chemistry 5】 [Chemical formula 2] 【Chemistry 6】 [Chemical formula 3] 【Chemistry 7】 [Chemical formula 11] (R １ )(R ２ )NH [Chemical formula 12] (R ３ )(R ４ )NH (In the above chemical formulas 1-1, 2, 3, 11 and 12, X is Cl or Br; R １ ~R ４ are each independently C1-C7 alkyl.

7. A method for producing a silicon compound, comprising the steps of: reacting a compound of the following chemical formula 2 with a fluorine source to produce a compound of the following chemical formula 4; and reacting the compound of the chemical formula 4 with compounds of the following chemical formulas 11 and 12 to produce a silicon compound of the following chemical formula 1-1. [Chemical formula 1-1] 【Chemistry 8】 [Chemical formula 2] 【Chemistry 9】 [Chemical formula 4] 【Chemistry 10】 [Chemical formula 11] (R １ )(R ２ )NH [Chemical formula 12] (R ３ )(R ４ )NH (In the above Chemical Formula 1-1, Chemical Formula 2, 4, 11 and 12, X is Cl or Br; R １ ~R ４ are each independently C1-C7 alkyl.

8. A composition for depositing a silicon-containing thin film, comprising the silicon compound according to any one of claims 1 to 5.

9. A method for producing a silicon-containing thin film, using the silicon compound according to any one of claims 1 to 5 or a composition for silicon-containing thin film deposition containing the silicon compound.

10. The method for producing a silicon-containing thin film according to claim 9 , wherein the silicon-containing thin film is a fluorine- and silicon-containing thin film.

11. The method for producing a silicon-containing thin film according to claim 10 , wherein the silicon-containing thin film contains 0.5 at % or more of fluorine.

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