Electronic device

Abstract

To provide an electronic device capable of suppressing influence of an electric field in a through hole due to an insulating layer.SOLUTION: An electronic device includes a substrate, an insulating layer, a conductive film section, and an extension section. The substrate is provided with a first through hole extending in a first direction. The insulating layer is stacked on the substrate and provided with a second through hole. The second through hole is aligned with the first through hole in the first direction, communicates with the first through hole, and being included in the first through hole when viewed along the first direction. The conductive film section is provided on an inner surface of the second through hole. The extension section extends continuously from the conductive film section into the first through hole, being separated from the substrate and the insulating layer, and being conductive.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to electronic devices. [Background technology]

[0002] There is an electronic device having an insulating layer with a through hole. For example, the electronic device is used to control an electron beam passing through the through hole. In such an electronic device, it is desirable to suppress the influence of the insulating layer on the electric field in the through hole. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-068505 Summary of the Invention [Problem to be solved by the invention]

[0004] The embodiments of the present invention provide an electronic device that can suppress the influence of an insulating layer on an electric field in a through hole. [Means for solving the problem]

[0005] According to an embodiment of the present invention, an electronic device includes a substrate, an insulating layer, a conductive film portion, and an extension portion. The substrate is provided with a first through hole extending in a first direction. The insulating layer is laminated on the substrate and is provided with a second through hole. The second through hole communicates with the first through hole and is contained within the first through hole when viewed along the first direction. The conductive film portion is provided on an inner surface of the second through hole. The extension portion extends continuously from the conductive film portion into the first through hole, is separated from the substrate and the insulating layer, and is conductive. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic cross-sectional view illustrating an electronic device according to an embodiment. [Figure 2] FIG. 2 is a schematic plan view illustrating the electronic device according to the embodiment. [Figure 3] FIG. 3 is a schematic plan view illustrating the electronic device according to the embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. [Figure 6] FIG. 6 is a graph illustrating the simulation results of the electric potential inside the through-hole. [Figure 7] FIG. 7 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. [Figure 9] FIG. 9 is a schematic plan view illustrating the electronic device according to the embodiment. [Figure 10] 10(a) to 10(d) are schematic cross-sectional views illustrating the manufacturing process of the electronic device according to the embodiment. [Figure 11] 11(a) to 11(d) are schematic cross-sectional views illustrating the manufacturing process of the electronic device according to the embodiment. [Figure 12] 12A and 12B are schematic cross-sectional views illustrating the manufacturing process of the electronic device according to the embodiment. [Figure 13] 13(a) to 13(f) are schematic cross-sectional views illustrating a method for manufacturing an electrode portion of an electronic device according to the embodiment. [Figure 14] 14(a) to 14(c) are schematic cross-sectional views illustrating a method for manufacturing an electrode portion of an electronic device according to the embodiment. [Figure 15] FIG. 15 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] FIG. 1 is a schematic cross-sectional view illustrating an electronic device according to an embodiment. 2 and 3 are schematic plan views illustrating the electronic device according to the embodiment. Fig. 2 is a view of the electronic device 100 according to the embodiment as seen from above, i.e., as seen along the arrow AR1 shown in Fig. 1. Fig. 3 is a view of the electronic device 100 as seen from below, i.e., as seen along the arrow AR2 shown in Fig. 1. Fig. 1 shows a cross section of the electronic device 100 along the Z direction. Fig. 1 corresponds to the cross section taken along the line AA shown in Fig. 2 or the cross section taken along the line BB shown in Fig. 3.

[0009] As shown in FIG. 1, the electronic device 100 includes a substrate 10, an insulating layer 20, a conductive film portion 30, and an extension portion 40.

[0010] The substrate 10 has a substrate front surface 10f and a substrate back surface 10b opposite to the substrate front surface 10f. The substrate 10 is provided with a first through hole 10h extending in the Z direction (first direction). The first through hole 10h extends from the substrate front surface 10f to the substrate back surface 10b, penetrating the substrate 10 in the Z direction. For example, the substrate 10 is conductive. The electrical resistivity of the substrate 10 is lower than the electrical resistivity of the insulating layer 20.

[0011] The insulating layer 20 is stacked on the substrate 10. In the description of the embodiment, the Z direction is the direction from the substrate 10 to the insulating layer 20. The X direction (second direction) is a direction perpendicular to the Z direction. The Y direction is a direction perpendicular to the Z direction and the X direction. For example, the Z direction is a direction perpendicular to the substrate surface 10f of the substrate 10. In other words, the substrate surface 10f is a surface extending parallel to the XY plane.

[0012] The insulating layer 20 has a first surface 20b on the substrate 10 side and a second surface 20f on the opposite side to the first surface 20b. For example, a part of the first surface 20b (a part other than the exposed surface 21) is in contact with the substrate surface 10f of the substrate 10.

[0013] A second through hole 20h is provided in the insulating layer 20. The second through hole 20h extends, for example, in the Z direction. The second through hole 20h extends from the first surface 20b to the second surface 20f and penetrates the insulating layer 20 in the Z direction.

[0014] The second through hole 20h is aligned with the first through hole 10h in the Z direction (overlapping in the Z direction). The second through hole 20h is connected to the first through hole 10h. That is, the first through hole 10h and the second through hole 20h form a through hole 100h that penetrates the substrate 10 and the insulating layer 20 in the Z direction. For example, an electron beam travels from the upper side of the electronic device 100 (the second surface 20f side of the insulating layer 20) through the through hole 100h (the first through hole 10h and the second through hole 20h) to the lower side of the electronic device 100 (the substrate back surface 10b side of the substrate 10). The electronic device 100 is used, for example, to control the electron beam passing through the through hole 100h.

[0015] In this example, the center C1 of the first through hole 10h coincides with the center C2 of the second through hole 20h. The center C1 is the center of the first through hole 10h in the XY plane, e.g., a central axis extending in the Z direction. The center C2 is the center of the second through hole 20h in the XY plane, e.g., a central axis extending in the Z direction.

[0016] The area of ​​the first through hole 10h in the XY plane is larger than the area of ​​the second through hole 20h in the XY plane. As shown in Fig. 3, when viewed along the Z direction, the second through hole 20h is contained within the first through hole 10h. In other words, when viewed along the Z direction, the edge of the first through hole 10h surrounds the outer side of the edge of the second through hole 20h.

[0017] In this example, the first through hole 10h and the second through hole 20h are each octagonal when viewed along the Z direction. However, the first through hole 10h and the second through hole 20h may be any polygonal shape, such as a rectangle, or may be circular (including an ellipse). Furthermore, when viewed along the Z direction, the second through hole 20h is not similar in shape to the first through hole 10h in this example, but may be similar in shape to the first through hole 10h.

[0018] 1, the conductive film portion 30 is provided on the inner surface 22 of the second through hole 20h. The inner surface 22 is a side surface of the insulating layer 20 that defines the second through hole 20h. The inner surface 22 is continuous from the first surface 20b to the second surface 20f of the insulating layer 20. In other words, the conductive film portion 30 is provided on the side surface of the insulating layer 20 within the second through hole 20h.

[0019] The conductive film portion 30 is in contact with, for example, the inner surface 22 of the second through hole 20h. The conductive film portion 30 is in contact with, for example, the entire inner surface 22 and covers the entire inner surface 22. That is, the conductive film portion 30 is, for example, tubular and provided around the entire circumference of the inner surface 22 in the XY plane. In this example, the inner surface 22 extends parallel to the Z direction. Therefore, the conductive film portion 30 extends parallel to the Z direction in the cross section of FIG. 1.

[0020] The conductive film portion 30 functions as, for example, an anti-static film. That is, the conductive film portion 30 shields the electric field generated by the charging of the insulating layer 20. This can reduce the influence of the electric field (electric force lines) from the inner surface 22 of the second through hole 20h of the insulating layer 20 on the inside of the through hole.

[0021] The extension portion 40 has, for example, an eave-like shape formed by extending the conductive film portion 30. The extension portion 40 extends continuously from the conductive film portion 30 into the first through-hole 10h. The extension portion 40 is spaced apart from the substrate 10 and the insulating layer 20. That is, the extension portion 40 protrudes from the lower end of the insulating layer 20 toward the substrate 10 and is located below (on the substrate 10 side of) the first surface 20b of the insulating layer 20. The extension portion 40 is aligned with the substrate 10 in the X and Y directions. For example, the extension portion 40 has a tubular shape extending from the conductive film portion 30 into the first through-hole 10h around the entire circumference of the conductive film portion 30 in the XY plane. In this example, the extension portion 40 extends parallel to the Z direction from the conductive film portion 30.

[0022] The first surface 20b of the insulating layer 20 has an exposed surface 21 exposed inside the first through hole 10h. The exposed surface 21 is located around the lower end of the second through hole 20h (the end on the first through hole 10h side). That is, the shape of the exposed surface 21 in the XY plane is, for example, annular (donut-shaped) (see FIG. 3). As shown in FIG. 1, a gap G (space) is formed directly below the exposed surface 21. That is, the extension portion 40 is provided with a gap G between it and the inner surface of the first through hole 10h and between it and the exposed surface 21.

[0023] The electric field generated by the insulating layer 20 being charged is shielded by the extension 40 extending into the first through-hole 10h. The influence of the electric field due to the insulating layer 20 (e.g., the exposed surface 21) on the electric field inside the through-hole 100h can be suppressed. In this way, even if the insulating layer 20 is charged, the influence of the electric field leaking from the insulating layer 20 into the through-hole can be reduced. For example, the influence of the electric field leaking from the insulating layer 20 on the electron beam passing through the through-hole can be reduced.

[0024] In this example, the electronic device 100 further includes a first electrode 51 and a second electrode 52. The first electrode 51 and the second electrode 52 are provided on the insulating layer 20 on the side opposite to the substrate 10. In other words, the first electrode 51 and the second electrode 52 are provided above the second surface 20f of the insulating layer 20.

[0025] 2, when viewed along the Z direction, the first electrode 51 and the second electrode 52 face each other with the second through-hole 20h interposed therebetween. That is, in the XY plane, for example, the center C2 of the second through-hole 20h is located between the first electrode 51 and the second electrode 52. For example, the first electrode 51, the center C2 of the second through-hole 20h, and the second electrode 52 are aligned in this order in the X direction.

[0026] The first electrode 51 and the second electrode 52 are, for example, electrodes for controlling an electron beam. The electronic device 100 can control the direction in which an electron beam passing through the through-hole 100h travels by, for example, controlling the magnitude of a voltage applied between the first electrode 51 and the second electrode 52.

[0027] The electronic device according to the embodiment controls the direction of travel of an electron beam passing between electron beam control electrodes, for example. The electronic device according to the embodiment is applied to devices that control an electron beam to irradiate an object for observation, processing, etc., such as an electron microscope that observes surfaces using an electron beam, an electron beam lithography device that draws fine patterns on a mask or wafer, or an inspection device that scans a surface with an electron beam to detect defects. The electronic device according to the embodiment is, for example, an electron beam control device such as an electrostatic lens or a deflector.

[0028] However, the uses of the electronic device according to the embodiment are not limited to the above. The electronic device according to the embodiment can be applied to any device in which an electron beam passes through a through-hole provided in a substrate and an insulating layer. The electronic device according to the embodiment does not necessarily have the first electrode 51 and the second electrode 52. The first electrode 51 and the second electrode 52 may be provided as needed.

[0029] 1, a conductive film portion 35 is provided on the second surface 20f of the insulating layer 20. For example, the conductive film portion 30 provided on the inner surface 22 of the second through-hole 20h may be continuous with the conductive film portion 35 on the second surface 20f. In this example, the conductive film portion 35, the conductive film portion 30, and the extending portion 40 are integrally provided. That is, the conductive film portion 35, the conductive film portion 30, and the extending portion 40 are each part of a single conductive film 36 (antistatic film) provided on the insulating layer 20.

[0030] 1, the first electrode 51 and the second electrode 52 extend upward beyond the conductive film portion 35. The first electrode 51 and the second electrode 52 extend in the Z direction and are plate-shaped extending in, for example, the Y direction. The length of the first electrode 51 in the Z direction may be longer than the length (thickness) of the insulating layer 20 in the Z direction. The length of the second electrode 52 in the Z direction may be the same as the length of the first electrode 51 in the Z direction.

[0031] 2, when viewed along the Z direction, for example, the conductive film portion 35 surrounds the periphery of the first electrode 51 and the second electrode 52. In this example, the conductive film portion 35 is spaced apart from the first electrode 51 and the second electrode 52.

[0032] The conductive film portion 35 may be continuous with the second electrode 52. The second electrode 52 may be electrically connected to the conductive film 36 (the conductive film portion 35, the conductive film portion 30, and the extension portion 40). The conductive film 36 and the second electrode 52 can be set to a common potential (e.g., ground). On the other hand, the first electrode 51 is insulated from the conductive film 36 (the conductive film portion 35, the conductive film portion 30, and the extension portion 40). The voltage between the electrodes can be controlled by applying a different voltage to the first electrode 51 than to the conductive film 36 and the second electrode 52.

[0033] As shown in FIG. 1, the first through hole 10h has an inner surface 12. The inner surface 12 is a side surface of the substrate 10 that defines the first through hole 10h. The inner surface 12 is continuous from the substrate front surface 10f to the substrate back surface 10b. As shown in FIG. 1, the inner surface 12 includes a first inner surface region 12a. The first inner surface region 12a is a region of the inner surface 12 that is located at the end of the inner surface 12 on the insulating layer 20 side. When viewed along the Z direction (see FIG. 3), the first inner surface region 12a is spaced apart in the X direction from the center C1 of the first through hole 10h.

[0034] 1, the extension portion 40 includes a first portion 40a facing the first inner surface region 12a. The first portion 40a is provided at a distance from the first inner surface region 12a in the X direction. In other words, the direction connecting the first portion 40a and the first inner surface region 12a is parallel to the X direction. When viewed along the Z direction (see FIG. 3), the first portion 40a is located between the first inner surface region 12a and the center C1 of the first through hole 10h.

[0035] The exposed surface 21 of the insulating layer 20 has a first exposed region 21a. The first exposed region 21a is located between the first portion 40a and the first inner surface region 12a in the X direction. For example, the first portion 40a can block an electric field that leaks from the first exposed region 21a into the through hole 100h due to the insulating layer 20 being charged.

[0036] For example, the length L1 (see FIG. 1) of the first portion 40a along the Z direction is the same as or longer than the length L2 (see FIG. 1) of the first exposed region 21a along the X direction. In this way, the long first portion 40a can further suppress the electric field from the exposed surface 21 into the through hole 100h. Note that the length L2 corresponds to the distance between the first inner surface region 12a and the first portion 40a.

[0037] The length L1 may be shorter than the length L2. When the first portion 40a is short, for example, it is easier to improve the mechanical strength of the extension portion 40. The length L2 is, for example, not less than 0.1 μm and not more than 5 μm. The length L1 is, for example, not less than 0.1 μm and not more than 5 μm.

[0038] For example, the thickness T1 of the first portion 40a is thinner than the length L2. Because the first portion 40a (extension 40) is conductive, even a relatively thin film can suppress the influence of the electric field from the insulating layer 20 to the inside of the through-hole 100h. However, the thickness T1 may be thicker than the length L2. When the thickness T1 is thick, for example, it is easier to improve the mechanical strength of the extension 40.

[0039] FIG. 4 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. 4 shows a cross section of an electronic device 101 according to an embodiment taken along the Z direction. As shown in the cross section of FIG. 4, in the electronic device 101, the direction in which the first portion 40a of the extension portion 40 extends into the first through-hole 10h is inclined with respect to the Z direction. The direction in which the first portion 40a extends into the first through-hole 10h is, for example, a direction in which the first portion 40a approaches the center C1 of the first through-hole 10h as it moves toward the rear surface 10b of the substrate. For example, the influence of the exposed surface 21 on the electric field in the through-hole 10h changes depending on the direction in which the first portion 40a extends.

[0040] The conductive film portion 30 includes a first film portion 30a. The first portion 40a extends continuously from the lower end of the first film portion 30a into the first through-hole 10h. In the cross section of FIG. 4, the inner surface of the second through-hole 20h is inclined with respect to the Z direction. Therefore, the extending direction of the first film portion 30a is inclined with respect to the Z direction. The extending direction of the first film portion 30a is a direction approaching the center C2 of the second through-hole 20h as it moves toward the substrate back surface 10b.

[0041] FIG. 5 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. FIG. 5 shows a cross section of the electronic device 102 according to the embodiment taken along the Z direction. The electronic device 102 also includes a substrate 10, an insulating layer 20, a conductive film portion 30, an extension portion 40, a first electrode 51, and a second electrode 52. The electronic device 102 further includes an electrode portion 70 connected above the first electrode 51 and the second electrode 52. In this example, the first electrode 51 and the second electrode 52 are connection electrodes to which the electrode portion 70 is connected.

[0042] The electrode section 70 includes a substrate 60, a first control electrode 53, a second control electrode 54, a first connecting conductive section 55, and a second connecting conductive section 56. The first control electrode 53 and the second control electrode 54 are, for example, a pair of electron beam control electrodes.

[0043] The substrate 60 is disposed on the opposite side of the first electrode 51 and the second electrode 52 from the insulating layer 20. In other words, the first electrode 51 and the second electrode 52 are located between the substrate 60 and the insulating layer 20.

[0044] The substrate 60 has a first substrate surface 60b on the side of the first electrode 51 and the second electrode 52, and a second substrate surface 60f on the opposite side of the first substrate surface 60b. The substrate 60 is provided with a third through hole 60h extending in the Z direction. The third through hole 60h extends from the second substrate surface 60f to the first substrate surface 60b and penetrates the substrate 60 in the Z direction. The third through hole 60h is aligned with the first through hole 10h and the second through hole 20h in the Z direction.

[0045] The first control electrode 53 and the second control electrode 54 are provided in a third through hole 60h of the substrate 60. The first control electrode 53 and the second control electrode 54 extend in the Z direction from the end of the third through hole 60h on the insulating layer 20 side. The first control electrode 53 and the second control electrode 54 extend in the Z direction and are plate-shaped extending in, for example, the Y direction. When viewed along the Z direction, the first control electrode 53 and the second control electrode 54 face each other across a center C3 of the third through hole 60h. The center C3 is the center of the third through hole 60h in the XY plane, and is, for example, a central axis extending in the Z direction.

[0046] The first connection conductive portion 55 and the second connection conductive portion 56 are provided on the first substrate surface 60b side of the substrate 60. The first connection conductive portion 55 is electrically connected to the first control electrode 53 via a wiring layer 57. The second connection conductive portion 56 electrically connects the wiring layer 58 to the second control electrode 54.

[0047] An insulating layer 61 is provided between the first control electrode 53, the wiring layer 57, and the first connecting conductive portion 55 and the substrate 60. An insulating layer 62 is provided between the second control electrode 54, the wiring layer 58, and the second connecting conductive portion 56 and the substrate 60. The insulating layers 61 and 62 may be interlayer insulating films. That is, a wiring layer may be provided inside the insulating layers 61 and 62.

[0048] The first connection conductive portion 55 is located between the first electrode 51 and the substrate 60 and is in contact with the first electrode 51. The first control electrode 53 is electrically connected to the first electrode 51 via the wiring layer 57 and the first connection conductive portion 55. The second connection conductive portion 56 is located between the second electrode 52 and the substrate 60 and is in contact with the second electrode 52. The second control electrode 54 is electrically connected to the second electrode 52 via the wiring layer 58 and the second connection conductive portion 56. For example, the potential of the first electrode 51 controls the potential of the first control electrode 53, and the potential of the second electrode 52 controls the potential of the second control electrode 54. The first electrode 51 and the second electrode 52 control the voltage between the first control electrode 53 and the second control electrode 54.

[0049] The electronic device 102 can control the direction in which the electron beam passes through the through-holes 102h (the third through-hole 60h, the second through-hole 20h, and the first through-hole 10h) by, for example, controlling the magnitude of the voltage applied between the first electrode 51 and the second electrode 52. The electron beam passes through the through-holes 102h from the upper side of the electronic device 102 (the second substrate surface 60f side of the substrate 60) to the lower side of the electronic device 102 (the substrate back surface 10b side of the substrate 10).

[0050] FIG. 6 is a graph illustrating the simulation results of the electric potential inside the through-hole. 6 shows the relationship between the length L (μm) of the extension portion 40 in the Z direction and the absolute value of the potential φ (V) in the through-hole 100h in an electronic device similar to the electronic device 102 (see FIG. 5). The length L is 0 μm (no extension portion 40), 0.25 μm, 0.5 μm, 1.0 μm, or 1.5 μm.

[0051] The potential φ is the potential inside the through hole 100h at the height of the first surface 20b of the insulating layer 20. In Fig. 6, potentials φ1 and φ2 are shown as the potentials φ. The potential φ1 is the potential at the center position of the through hole 100h. The potential φ2 is the potential at a position 3 µm away from the center position of the through hole 100h in the X direction.

[0052] In the simulation, the diameter of the first through-hole 10h is 10 μm, the thickness of the antistatic film is 0.25 μm, and the width of the exposed surface 21 (the length of the first exposed region 21a in the X direction) is 0.5 μm.

[0053] The absolute value of the potential φ when L=0.5 μm is reduced to about one tenth of the absolute value of the potential φ when there is no extension portion 40 (L=0 μm). Furthermore, the absolute value of the potential φ when L=1.0 μm is reduced to about one hundredth of the absolute value of the potential φ when there is no extension portion 40.

[0054] FIG. 7 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. FIG. 7 shows a cross section of the electronic device 103 according to the embodiment taken along the Z direction. In the cross section of Figure 7, the direction in which the first part 40a of the extension portion 40 extends from the first film portion 30a into the first through hole 10h is different from the direction in which the first film portion 30a of the conductive film portion 30 extends (the direction in which the inner surface 22 of the second through hole 20h extends).

[0055] More specifically, in the example of FIG. 7, the direction in which the first portion 40a extends into the first through hole 10h is more aligned with the Z direction than the direction in which the first film portion 30a extends. That is, as shown in FIG. 7, the angle θ30a is larger than the angle θ40a. Note that the angle θ30a is the angle between a line Lz perpendicular to the Z direction and the direction in which the first film portion 30a extends in the cross section of FIG. 7. The angle θ40a is the angle between a line Lz perpendicular to the Z direction and the direction in which the first portion 40a extends into the first through hole 10h in the cross section of FIG.

[0056] The influence of the electric field by the exposed surface 21 changes depending on the direction in which the first portion 40a extends. For example, the influence of the exposed surface 21 on the electric field inside the through hole can be further suppressed. Furthermore, when the inner surface 22 of the second through hole 20h is inclined, for example, it is easy to form the first film portion 30a on the inner surface 22.

[0057] 7, the inner surface 12 of the first through hole 10h includes a second inner surface region 12b. The second inner surface region 12b is a region separated from the first inner surface region 12a in the X direction. The second inner surface region 12b faces the first inner surface region 12a. The center C1 of the first through hole 10h is between the first inner surface region 12a and the second inner surface region 12b.

[0058] The extension 40 includes a second portion 40b facing the second inner surface region 12b. The second portion 40b is provided at a distance from the second inner surface region 12b in the X direction. In other words, the direction connecting the second portion 40b and the second inner surface region 12b is parallel to the X direction. When viewed along the Z direction, the second portion 40b is located between the second inner surface region 12b and the center C1 of the first through hole 10h. The second portion 40b faces the first portion 40a across the center C1 of the first through hole 10h.

[0059] The length L3 of the second portion 40b along the Z direction may be different from the length L1 of the first portion 40a along the Z direction. In the example of Fig. 7, the length L3 is longer than the length L1. In this way, the extension portion 40 does not need to have a uniform length over the entire circumference surrounding the center C1 of the first through hole 10h.

[0060] The conductive film portion 30 includes a second film portion 30b. The second portion 40b extends continuously from the lower end of the second film portion 30b into the first through hole 10h. In the example of FIG. 7, the direction in which the second portion 40b extends from the second film portion 30b into the first through hole 10h is different from the direction in which the first portion 40a extends from the first film portion 30a into the first through hole 10h. In this way, the extending portion 40 does not have to extend in a uniform direction around the entire circumference surrounding the center C1 of the first through hole 10h.

[0061] Like the second portion 40b shown in FIG. 7, the extension portion 40 may be bent or curved in a cross section along the Z direction.

[0062] For example, the influence of the electric field from the exposed surface 21 on the inside of the through hole 100h varies depending on the length and orientation of the first portion 40a and the second portion 40b. In the example of FIG. 1 described above, the length of the second portion 40b along the Z direction is the same as the length of the first portion 40a along the Z direction. In the example of FIG. 1, the first portion 40a and the second portion 40b extend parallel to each other in the Z direction. For example, the extension portion 40 may extend the same length and in the same direction around the entire circumference surrounding the center C1 of the first through hole 10h.

[0063] FIG. 8 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. FIG. 9 is a schematic plan view illustrating the electronic device according to the embodiment. Fig. 8 shows a cross section of the electronic device 104 according to the embodiment taken along the Z direction. Fig. 9 shows the electronic device 104 according to the embodiment as seen from below, i.e., as seen along the arrow AR3 shown in Fig. 8. Fig. 8 corresponds to a cross section taken along the line CC shown in Fig. 9.

[0064] The exposed surface 21 of the insulating layer 20 includes a second exposed region 21b. The second exposed region 21b is located between the second portion 40b of the extension portion 40 and the second inner surface region 12b of the first through hole 10h in the X direction.

[0065] 9, in the electronic device 104, when viewed along the Z direction, the center C1 of the first through-hole 10h does not coincide with the center C2 of the second through-hole 20h. In this example, the length L5 in the X direction of the second exposed region 21b is different from the length L4 in the X direction of the first exposed region 21a. For example, the length L5 is longer than the length L4.

[0066] Because the exposed surface 21 is asymmetric in the X direction, the electric field generated by the exposed surface 21 in the through hole 100h is also asymmetric. This may affect the path of an electron beam passing through the through hole 100h, for example. Even in such a case, the extension 40 can reduce the effect of the electric field leaking from the exposed surface 21 into the through hole 100h. For example, the effect of the electric field leaking from the exposed surface 21 on the electron beam passing through the through hole 100h can be reduced.

[0067] For example, when viewed along the Z direction as shown in Figure 9, the shape of second through hole 20h is different from a similar shape to the shape of first through hole 10h. In such a case, the symmetry of the shape of exposed surface 21 is reduced, and the electric field in through hole 100h generated by exposed surface 21 may become asymmetric. Even in such a case, by providing extension portion 40, the influence of the electric field leaking from exposed surface 21 into through hole 100h can be reduced.

[0068] 10(a) to 10(d) and 11(a) to 11(d) are schematic cross-sectional views illustrating the manufacturing process of the electronic device according to the embodiment. These figures illustrate a method of manufacturing an electronic device similar to electronic device 100 described with respect to FIG.

[0069] As shown in FIG. 10(a), a substrate 10 having an insulating layer 20 laminated thereon is prepared. The material of the substrate 10 can be a semiconductor. The substrate 10 contains, for example, silicon. The substrate 10 is, for example, a semiconductor substrate (such as a silicon substrate). The insulating layer 20 is made of, for example, a material mainly composed of a silicon oxide film.

[0070] For example, an element 10d such as a transistor is provided on the substrate 10. Wiring 20w electrically connected to the element 10d is provided in the insulating layer 20. For example, the wiring 20w is a multi-layer wiring, and the insulating layer 20 is an interlayer insulating film provided between the wirings. The substrate 10 and the insulating layer 20 are, for example, an LSI substrate, and contain a circuit formed by a plurality of elements 10d and wiring 20w. This circuit is, for example, a control circuit that controls the electron beam. In other words, this control circuit is electrically connected to a first electrode 51 and a second electrode 52, which will be formed later. The control circuit controls the voltage between electrodes for controlling the electron beam.

[0071] 10(a) schematically illustrates the elements 10d and a portion of the wiring 20w. For convenience, the elements 10d and the wiring 20w are omitted from illustrations other than FIG. 10(a) in the present specification. The elements 10d and the wiring 20w may also be provided as appropriate in each of the electronic devices 100 to 105 according to the embodiments.

[0072] For example, by patterning and etching a resist or the like, an exposed portion in which part of the wiring 20w is exposed is formed on the front surface side (second surface 20f side) of the insulating layer 20. The exposed portion of the wiring 20w becomes a connection portion that electrically connects to the first electrode 51 and the second electrode 52 that will be formed later.

[0073] Thereafter, for example, resist or the like is patterned, and anisotropic etching is performed on the surface side of the insulating layer 20 to expose a portion of the substrate surface 10f of the substrate 10. As a result, as shown in FIG. 10(b), a through hole (second through hole 20h) is formed in the insulating layer 20. Furthermore, the substrate 10 exposed in the through hole of the insulating layer 20 is etched to form a recess 10p in the substrate 10. The recess 10p is located directly below the through hole of the insulating layer 20 and continues from the through hole. The depth to which the substrate 10 is etched (i.e., the depth of the recess 10p) corresponds to the length of the extension portion 40 (eaves) to be formed later. To form a long extension portion 40, the recess 10p is made deeper. For example, the depth of the recess 10p is 1 μm or more.

[0074] The resist is then removed. In this manner, the entire insulating layer 20 and a part of the substrate 10 at the location where the through hole 100h will be formed are etched. The connection part (exposed part) of the wiring 20w that is electrically connected to the first electrode 51 or the second electrode 52 may be formed after the part of the through hole is formed.

[0075] 10(c), a conductive film 36f that will become the conductive film 36 (antistatic film) is formed on the entire second surface 20f of the insulating layer 20, the inner surfaces of the second through holes 20h, and the inner surfaces (side surfaces and bottom surfaces) of the recesses 10p. As described above with reference to FIG. 1, the conductive film 36 includes the conductive film portion 35, the conductive film portion 30, and the extending portion 40.

[0076] For example, the material of the conductive film portion 35, the material of the conductive film portion 30, and the material of the extension portion 40 are the same. In this case, the conductive film portion 35, the conductive film portion 30, and the extension portion 40 can be formed from one conductive film 36f.

[0077] However, in the embodiment, the material of the conductive film portion 35, the material of the conductive film portion 30, and the material of the extension portion 40 may be different from one another. The conductive film portion 35, the conductive film portion 30, and the extension portion 40 may be formed separately. For example, a material that is easy to process into the extension portion 40, a material that is easy to form a film, or a material with high strength may be appropriately selected.

[0078] The material of the extension portion 40 (see FIG. 1) is, for example, at least one selected from the group consisting of titanium nitride (TiN), chromium nitride (CrN), gold (Au), copper (Cu), and aluminum (Al). The material of the conductive film portion 30 (see FIG. 1) is, for example, at least one selected from the group consisting of TiN, CrN, Au, Cu, and Al. The material of the conductive film portion 35 (see FIG. 1) is, for example, at least one selected from the group consisting of TiN, CrN, Au, Cu, and Al. In this example, a titanium nitride film is formed as the conductive film 36f by sputtering.

[0079] The conductive film 36f is electrically connected to the connection portion (exposed portion) of the wiring 20w. As shown in FIG. 10(d), by patterning the conductive film 36f, wiring layers 36c and 36d are formed, which are electrically connected to the circuit that controls the electron beam via the connection portion of the wiring 20w. Furthermore, a first electrode 51 electrically connected to the wiring layer 36c and a second electrode 52 electrically connected to the wiring layer 36d are formed. That is, the wiring 20w electrically connects, for example, an element provided on the substrate 10 to the first electrode 51.

[0080] The first electrode 51 and the second electrode 52 are formed by, for example, a plating process. The material for the first electrode 51 and the second electrode 52 is, for example, gold, but is not particularly limited to this. Specifically, titanium and palladium are formed over the entire surface by sputtering, and then the desired electrode pattern is formed by resist patterning. Gold is formed on the exposed palladium surface by plating. After the gold has been formed to the desired thickness, the resist is removed, and the palladium and titanium are removed, thereby forming an electron beam control electrode made of gold. At this time, the conductive film 36f made of titanium nitride formed in the through hole is not etched. The first electrode 51 and the second electrode 52 may also be formed by a sputtering process.

[0081] In this way, electrodes (first electrode 51, second electrode 52) for controlling the electron beams and an antistatic film (conductive film) formed on the through-holes formed in the insulating layer 20 and on the partially etched surface of the substrate 10 are formed on the substrate 10.

[0082] 11(a), for example, a temporary bonding material 80 is formed on the substrate surface 10f side of the substrate 10. The temporary bonding material 80 is, for example, an organic adhesive. A support plate 81 is adhered onto the temporary bonding material 80. The support plate 81 is made of, for example, a glass substrate.

[0083] 11(b), the substrate 10 is turned upside down, and a resist 82 is formed on the backside of the substrate 10, followed by patterning. If necessary, the substrate 10 can be thinned by polishing before patterning.

[0084] The resist 82 is patterned to match the through holes (second through holes 20h) formed in the insulating layer 20. A pattern of through holes to be formed in the substrate 10 is formed so as to include the through holes (second through holes 20h) formed in the insulating layer 20.

[0085] That is, for example, by patterning, an opening 82e is formed in the resist 82. The opening 82e overlaps in the Z direction with the through hole formed in the insulating layer 20. When viewed along the Z direction, the opening 82e encompasses the second through hole 20h and the recess 10p.

[0086] Using the resist 82 as a mask, the substrate 10 is anisotropically etched from the rear surface 10b side of the substrate until the insulating layer 20 is reached. As a result, as shown in FIG. 11(c), a first through-hole 10h penetrating the substrate 10 is formed. At this time, the conductive film 36f formed in the recess 10p is exposed.

[0087] Here, by changing the etching conditions, a portion of the conductive film 36f (the portion formed on the bottom of the recess 10p) is removed by etching. As a result, a through hole 100h is formed, connecting the first through hole 10h and the second through hole 20h. Furthermore, the portion of the conductive film 36f that was formed on the side surface of the recess 10p remains as an extension portion 40. That is, a conductive film portion 30 is provided on the inner surface of the second through hole 20h, and an eave-shaped extension portion 40 that extends from the conductive film portion 30 into the first through hole 10h is formed.

[0088] For example, due to process variations, the center of the first through hole 10h may not coincide with the center of the second through hole 20h. Furthermore, the shape of the first through hole 10h may not necessarily be similar to the shape of the second through hole 20h. In this case, the charging becomes asymmetric, which has an effect on the passing electron beam. This structure can reduce the effect on the electron beam even in such cases.

[0089] 11(d), the support plate 81 and the temporary fixing material 80 are removed to form the electronic device. After this, the substrate is diced into individual pieces as needed to form chips that can be mounted on a mounting substrate. For example, the electronic device can be mounted in a device and used as an electron beam control device.

[0090] For example, in the step of FIG. 10(b) described above, the taper angle and depth of the inner surface of the recess 10p change depending on the material of the substrate 10 and the etching conditions. This allows the direction in which the extension portion 40 extends into the first through-hole 10h and the length of the extension portion 40 to be adjusted. The taper angle of the inner surface of the through-hole provided in the insulating layer 20 changes depending on the material of the insulating layer 20 and the etching conditions. This allows the extension direction of the conductive film portion 30 provided on the inner surface of the through-hole to be adjusted. Also, for example, in the step of FIG. 11(c), if the thickness of the extension portion 40 is thin, it is easy to process the extension portion 40 in an eave-like shape. That is, for example, if the conductive film 36f is thin, it is easy to process the conductive film 36f.

[0091] 12A and 12B are schematic cross-sectional views illustrating the manufacturing process of the electronic device according to the embodiment. These figures illustrate a method of manufacturing an electronic device similar to the electronic device 102 described with respect to FIG. As shown in FIG. 12(a), an electrode unit 70 (e.g., an electrode chip) and a substrate unit 71 (e.g., a chip including a control circuit) are prepared. The substrate unit 71 has a substrate 10, an insulating layer 20, an antistatic film (conductive film portion 30 and extension portion 40), a first electrode 51, and a second electrode 52. A control circuit may be formed on the substrate 10 and the insulating layer 20, as in the description regarding FIG. 10(a). For example, the first electrode 51 and the second electrode 52 are electrically connected to the control circuit.

[0092] A method for manufacturing the electrode section 70 will be described later with reference to FIGS. 13(a) to 13(f) and 14(a) to 14(c).

[0093] The configuration and manufacturing method of the substrate unit 71 are the same as those of the electronic device described with reference to Figures 10(a) to 11(d). However, in this example, the first electrode 51 and the second electrode 52 are not electron beam control electrodes but connection electrodes that are electrically connected to the first control electrode 53 and the second control electrode 54 provided in the electrode unit 70. In this case, the height of the first electrode 51 and the second electrode 52 may be short. For example, the first electrode 51 and the second electrode 52 are formed by gold plating to a height of 1 to 2 µm.

[0094] 12(b), the substrate part 71 and the electrode part 70 are joined together such that the through-hole 100h of the substrate part 71 and the third through-hole 60h of the electrode part 70 overlap each other in the vertical direction. At this time, the substrate part 71 and the electrode part 70 may each be separated into individual pieces (chips).

[0095] Specifically, the first electrode 51 of the substrate portion 71 is joined to the first connecting conductive portion 55 of the electrode portion 70. The second electrode 52 of the substrate portion 71 is joined to the second connecting conductive portion 56 of the electrode portion 70. For example, thermocompression bonding is used for the joining.

[0096] The first control electrode 53 is electrically connected to a control circuit formed on the substrate portion 71 via the first electrode 51. The second control electrode 54 is electrically connected to a control circuit formed on the substrate portion 71 via the second electrode 52. In this way, the control circuit controls the voltage between the first control electrode 53 and the second control electrode 54.

[0097] 13(a) to 13(f) and 14(a) to 14(c) are schematic cross-sectional views illustrating a method for manufacturing an electrode portion of an electronic device according to the embodiment. As shown in FIG. 13(a), grooves 60p and 60q are formed on the first substrate surface 60b of the substrate 60 by, for example, lithography and etching. Electrodes will be formed in these grooves later. The electrodes are arranged, for example, in pairs. After the through-holes are formed, an electron beam passes between the paired electrodes. The substrate 60 may be, for example, a silicon substrate.

[0098] 13(b), an insulating film 64 is formed on the entire surface of the first substrate surface 60b of the substrate 60. As a result, the insulating film 64 is formed on the inner side surfaces of the trenches 60p and 60q. The insulating film 64 is, for example, a silicon oxide film.

[0099] As shown in FIG. 13(c), a conductive layer 66 is formed on the insulating film 64. That is, the conductive layer 66 is formed inside the grooves 60p and 60q. The conductive layer 66 is located inside the grooves 60p and 60q with respect to the insulating film 64. A metal material is used for the conductive layer 66. Specifically, W, Au, Cu, TiN, etc. are used as the metal material. A vapor deposition method (or a plating method) is used to form the conductive layer 66. By adjusting the film thickness of the conductive layer 66, the tops of the grooves 60p and 60q are closed by the metal film formation that advances from both sides of the grooves 60p and 60q.

[0100] Next, a portion 66a of the conductive layer 66 formed above the first substrate surface 60b is removed by etching, thereby forming the first control electrode 53 embedded in the groove 60p and the second control electrode 54 embedded in the groove 60q from the conductive layer 66, as shown in FIG.

[0101] Wiring layers 57 and 58 are formed to be electrically connected to the upper portions of the first control electrode 53 and the second control electrode 54 exposed at the top of the grooves. For example, after depositing a film of a metal material, patterning is performed by lithography and etching. Note that the wiring layer is usually etched in the areas where through holes are to be formed. A first connection conductive portion 55 is formed on the wiring layer 57, and a second connection conductive portion 56 is formed on the wiring layer 58. The first connection conductive portion 55 and the second connection conductive portion 56 are made of, for example, Au.

[0102] Next, a through-hole is formed between the paired electrodes. The substrate 60 is processed, for example, by resist patterning and etching. The thickness of the substrate 60 is, for example, 700 μm or more. In this case, it may be difficult to form a through-hole that penetrates the substrate 60 in a single process. Therefore, first, a recess is formed from the first substrate surface 60b side of the substrate 60 to partway through the substrate 60. Then, the substrate 60 is etched from the second substrate surface 60f side of the substrate 60 to form a recess. The recesses formed on both sides of the substrate 60 are connected to each other to form a through-hole through which the electron beam passes.

[0103] 13(e), a portion of the insulating film 64 is removed, and an insulating layer 61 is formed on the side surface of the groove 60p, and an insulating layer 62 is formed on the side surface of the groove 60q from the insulating film 64. A recess 60r is also formed in the substrate 60 from the first substrate surface 60b side. At least a portion of the recess 60r is located between the groove 60p and the groove 60q. In forming the recess 60r, the insulating layer 61 and the insulating layer 62 are exposed inside the recess 60r.

[0104] 13(f), parts of the insulating layer 61 and the insulating layer 62 are removed by etching using an etchant containing fluorine, for example, so that the side surfaces of the first control electrode 53 and the second control electrode 54 are exposed in the recess 60r.

[0105] 14(a), in order to thin the substrate 60 by etching from the second substrate surface 60f side, another support substrate 83 is bonded to the first substrate surface 60b side of the substrate 60. Specifically, an organic material 84 is applied and baked, and a support substrate made of, for example, a glass material is attached.

[0106] Next, the substrate 60 is turned upside down so that the support substrate 83 side faces downward. The substrate 60 is etched from the second substrate surface 60f side of the substrate 60 so that the substrate 60 has a desired thickness. For example, the thickness of the substrate 60 is set to 100 μm or more and 500 μm or less.

[0107] 14(b), a recess is formed on the second substrate surface 60f side of the substrate 60 by lithography and etching. This recess is connected to the recess 60r formed on the first substrate surface 60b side to form a through-hole (third through-hole 60h) in the substrate 60. Note that at the stage of FIG. 14(b), the substrate 60 is not completely penetrated because there is an organic material 84 for adhering the support substrate 83.

[0108] As shown in FIG. 14(c), the substrate 60 is again turned upside down, and the second substrate surface 60f of the substrate 60 is supported by, for example, adhesive tape 85. Thereafter, the upper support substrate 83 is peeled off, and the organic material 84 is removed by a solvent or ashing. In this way, a thinned substrate 60, electrodes (first control electrode 53, second control electrode 54) embedded in the substrate 60, and through-holes (third through-holes 60h) through which the electron beam passes are formed. Thereafter, the substrate 60 is cut into individual pieces as necessary.

[0109] In the third through-hole 60h, the substrate 60 is exposed except for the electrode portion. For example, the first control electrode 53 and the second control electrode 54 have an eave structure. That is, as shown in FIG. 14(c), for example, the end 53b (end on the second substrate surface 60f side) of the first control electrode 53 extends further toward the second substrate surface 60f than the end 61b (end on the second substrate surface 60f side) of the insulating layer 61. The etching described with reference to FIG. 13(f) causes the end 61b of the insulating layer 61 to recede from the end 53b of the first control electrode 53. The end 61b of the insulating layer 61 is covered by the end 53b of the first control electrode 53 and is not exposed in the third through-hole 60h. In this way, the insulating layer 61 is hidden behind the first control electrode 53. The entire side surface of insulating layer 61 on the side of third through-hole 60h is in contact with first control electrode 53 or wiring layer 57, and is covered by first control electrode 53 or wiring layer 57. Similarly, insulating layer 62 is hidden behind second control electrode 54.

[0110] For example, there is no portion within the third through-hole 60h where the insulating film is directly exposed. The effect of the charging of the insulating film on the electron beam is small within the third through-hole 60h. Meanwhile, as described with reference to FIG. 5 , the insulating layer 20 has an exposed surface 21 within the through-hole 100h. In contrast, according to the embodiment, the formation of the eave-shaped extension 40 can reduce the effect of the charging of the insulating layer 20 on the electron beam.

[0111] FIG. 15 is a schematic cross-sectional view illustrating the electronic device according to the embodiment. FIG. 15 shows a cross section of an electronic device 105 according to the embodiment taken along the Z direction. The electronic device 105 has a plurality of through holes 100h. That is, the substrate 10 has a plurality of first through holes 10h. The insulating layer 20 has a plurality of second through holes 20h. Each second through hole 20h is aligned with each first through hole 10h in the Z direction. One first through hole 10h and one second through hole 20h form a through hole 100h.

[0112] The electronic device 105 has a plurality of conductive film portions 30 and a plurality of extension portions 40. Each conductive film portion 30 is provided on the inner surface of each second through hole 20h. Each extension portion 40 extends from each conductive film portion 30 into each first through hole 10h.

[0113] The electronic device 105 may have a plurality of first electrodes 51 and a plurality of second electrodes 52. Each of the first electrodes 51 and each of the second electrodes 52 are arranged around each of the through-holes 100h so as to face each other.

[0114] In this way, the electronic device according to the embodiment may be provided with a plurality of through holes 100h. The number of through holes may be one or more, and may be set appropriately depending on the application of the electronic device, etc.

[0115] For example, the control circuit may set one of the pair of electron beam control electrodes to ground and control the voltage of the other. Alternatively, the control circuit may control the potentials of both electrodes. There may be two or more pairs of electron beam control electrodes. The electronic device does not necessarily have to have a control circuit. For example, it is possible to drive the electron beam control electrode by electrically connecting another substrate to the electron beam control electrode. The electronic device according to the embodiment may be a passive device that functions as an aperture. The electronic device does not necessarily have to have the electron beam control electrode, and may function as, for example, a shielding plate.

[0116] The embodiment may include the following configurations (for example, technical solutions). (Configuration 1) a substrate provided with a first through hole extending in a first direction; an insulating layer laminated on the substrate and having a second through hole formed therein, the second through hole communicating with the first through hole and being included in the first through hole when viewed along the first direction; a conductive film portion provided on the inner surface of the second through hole; a conductive extension portion that extends continuously from the conductive film portion into the first through hole and is spaced apart from the substrate and the insulating layer; An electronic device comprising: (Configuration 2) the insulating layer has a first surface facing the substrate, the first surface includes an exposed surface exposed in the first through hole, an inner surface of the first through hole includes a first inner surface region that is spaced apart in a second direction from a center of the first through hole when viewed along the first direction; the extension portion includes a first portion located between the first inner surface region and the center of the first through hole when viewed along the first direction, The electronic device of configuration 1, wherein the exposed surface includes a first exposed region located between the first portion and the first inner surface region in the second direction. (Configuration 3) 3. The electronic device of claim 2, wherein in a cross section along the first direction, the direction in which the first portion extends into the first through hole is inclined with respect to the first direction. (Configuration 4) the conductive film portion includes a first film portion, the first portion extends continuously from the first membrane portion into the first through-hole, An electronic device described in configuration 2 or 3, wherein, in a cross section along the first direction, the direction in which the first portion extends from the first film portion into the first through hole is different from the direction in which the first film portion extends. (Configuration 5) The electronic device described in configuration 4, wherein the angle between a straight line parallel to the first direction and the direction in which the first film portion extends is greater than the angle between the straight line and the direction in which the first portion extends. (Configuration 6) The electronic device of any one of configurations 2 to 5, wherein the length of the first portion along the first direction is the same as or longer than the length of the first exposed region along the second direction. (Configuration 7) 6. The electronic device according to any one of configurations 2 to 5, wherein the length of the first portion along the first direction is shorter than the length of the first exposed region along the second direction. (Configuration 8) 8. The electronic device according to any one of configurations 2 to 7, wherein the thickness of the first portion is smaller than the length of the first exposed region along the second direction. (Configuration 9) 9. The electronic device according to any one of configurations 1 to 8, wherein the center of the first through hole does not coincide with the center of the second through hole when viewed in the first direction. (Configuration 10) an inner surface of the first through hole includes a second inner surface region spaced apart from the first inner surface region in the second direction; the extension portion includes a second portion located between the second inner surface region and the center of the first through hole when viewed along the first direction, the exposed surface includes a second exposed region located between the second portion and the second inner surface region in the second direction, 9. The electronic device according to any one of configurations 2 to 8, wherein the length of the first exposed region in the second direction is different from the length of the second exposed region in the second direction. (Configuration 11) an inner surface of the first through hole includes a second inner surface region spaced apart from the first inner surface region in the second direction; the extension portion includes a second portion located between the second inner surface region and the center of the first through hole when viewed along the first direction, 11. The electronic device according to any one of configurations 2 to 8 and 10, wherein the length of the first portion along the first direction is different from the length of the second portion along the first direction. (Configuration 12) an inner surface of the first through hole includes a second inner surface region spaced apart from the first inner surface region in the second direction; the extension portion includes a second portion located between the second inner surface region and the center of the first through hole when viewed along the first direction, An electronic device described in any one of configurations 2 to 8, 10, and 11, wherein, in a cross section along the first direction, the direction in which the first portion extends into the first through hole is different from the direction in which the second portion extends into the second through hole. (Configuration 13) An electronic device described in any one of configurations 1 to 12, wherein the shape of the first through hole when viewed along the first direction is different from a similar shape to the shape of the second through hole when viewed along the first direction. (Configuration 14) 14. The electronic device according to any one of configurations 1 to 13, wherein the material of the extension portion is the same as the material of the conductive film portion. (Configuration 15) A plurality of the conductive film portions; A plurality of the extension portions; Equipped with the substrate has a plurality of the first through holes, the insulating layer has a plurality of the second through holes aligned with the plurality of first through holes in the first direction, the conductive film portions are provided on the inner surfaces of the second through holes, respectively; 15. The electronic device according to any one of configurations 1 to 14, wherein the plurality of extension portions extend from the plurality of conductive film portions, respectively. (Configuration 16) a first electrode and a second electrode provided on the insulating layer opposite the substrate; 16. The electronic device of any one of configurations 1 to 15, wherein the first electrode and the second electrode face each other across the second through hole when viewed in the first direction. (Configuration 17) 17. The electronic device according to claim 16, further comprising wiring provided in the insulating layer, electrically connecting the first electrode and an element provided on the substrate. (Configuration 18) 18. The electronic device according to claim 16, wherein the conductive film portion and the extension portion are electrically connected to the second electrode. (Configuration 19) 19. The electronic device according to any one of configurations 16 to 18, wherein the conductive film portion and the extension portion are insulated from the first electrode. (Configuration 20) another substrate disposed on the opposite side of the insulating layer from the first electrode and the second electrode, the another substrate having a third through hole; a first control electrode and a second control electrode provided in the third through hole and extending along the first direction; Furthermore, the third through hole extends in the first direction and is aligned with the first through hole and the second through hole in the first direction, When viewed along the first direction, the first control electrode and the second control electrode face each other across the center of the third through hole, the first control electrode is electrically connected to the first electrode; 20. The electronic device according to any one of configurations 16 to 19, wherein the second control electrode is electrically connected to the second electrode.

[0117] According to the embodiment, an electronic device can be provided that can suppress the influence of the insulating layer on the electric field inside the through hole.

[0118] In this specification, "electrically connected" includes not only connection through direct contact but also connection via other conductive members.

[0119] In this specification, "perpendicular" and "parallel" do not only mean strictly perpendicular and strictly parallel, but also include variations in the manufacturing process, for example, and may mean substantially perpendicular and substantially parallel. "One direction is aligned with another direction" may mean that the one direction and the other direction are parallel.

[0120] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element is within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting from known ranges.

[0121] Any combination of two or more elements of each embodiment to the extent technically possible is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

[0122] In addition, all electronic devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the electronic device described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0123] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0124] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0125] 10: Circuit board 10b: Back side of the board 10d: Element 10f: Board surface 10h: 1st through hole 10p: recess 12:Inner self 12a: First inner area 12b:Second inner surface area 20: Insulating layer 20b: 1st page 20f: 2nd side 20h: 2nd through hole 20w: Wiring 21: Exposed surface 21a: 1st exposure area 21b: 2nd exposed area 22:Inside 30: Conductive film section 30a: 1st membrane part 30b: Second membrane part 35: Conductive film section 36: Conductive film 36c, 36d: Wiring layer 36f: Conductive film 40: Extension part 40a: 1st part 40b:Second part 51: 1st electrode 52:Second electrode 53: First control electrode 53b: End 54: Second control electrode 55: First connecting conductive part 56: Second connecting conductive part 57, 58: Wiring layer 60: Circuit board 60b: 1st board surface 60f: Second board surface 60h: 3rd through hole 60p, 60q: Groove 60r: Recess 61: Insulating layer 61b: End 62: Insulating layer 64: Insulating film 66: Conductive layer 66a:part 70: Electrode part 71: Circuit board 80:Temporary fixing material 81: Support plate 82: Resist 82e:Aperture 83: Support substrate 84:Organic materials 85: Adhesive tape 100~105: Electronic equipment 100h: Through hole 102h: Through hole AR1~AR3: Arrows C1~C3: Center G: Gap L, L1 to L5: length Lz: straight line T1: Thickness θ30a, θ40a: Angle φ, φ1, φ2: electric potential

Claims

1. a substrate provided with a first through hole extending in a first direction; an insulating layer laminated on the substrate and having a second through hole formed therein, the second through hole communicating with the first through hole and being included in the first through hole when viewed along the first direction; a conductive film portion provided on an inner surface of the second through hole; a conductive extension portion that extends continuously from the conductive film portion into the first through hole and is spaced apart from the substrate and the insulating layer; An electronic device comprising:

2. the insulating layer has a first surface facing the substrate; the first surface includes an exposed surface exposed in the first through hole, an inner surface of the first through hole includes a first inner surface region that is spaced apart in a second direction from a center of the first through hole when viewed along the first direction; the extension portion includes a first portion located between the first inner surface region and the center of the first through hole when viewed along the first direction, The electronic device according to claim 1 , wherein the exposed surface includes a first exposed region located between the first portion and the first inner surface region in the second direction.

3. The electronic device according to claim 2 , wherein in a cross section taken along the first direction, a direction in which the first portion extends into the first through-hole is inclined with respect to the first direction.

4. the conductive film portion includes a first film portion, the first portion extends continuously from the first membrane portion into the first through-hole, 4. The electronic device according to claim 2, wherein in a cross section along the first direction, the direction in which the first portion extends from the first film portion into the first through hole is different from the direction in which the first film portion extends.

5. 5. The electronic device of claim 4, wherein the angle between a straight line parallel to the first direction and the direction in which the first film portion extends is greater than the angle between the straight line and the direction in which the first portion extends.

6. 4. The electronic device according to claim 2, wherein a length of the first portion along the first direction is the same as or longer than a length of the first exposed region along the second direction.

7. The electronic device according to claim 2 , wherein a length of the first portion along the first direction is shorter than a length of the first exposed region along the second direction.

8. The electronic device according to claim 2 , wherein the thickness of the first portion is smaller than the length of the first exposed region along the second direction.

9. 4. The electronic device according to claim 1, wherein a center of the first through hole does not coincide with a center of the second through hole when viewed in the first direction.

10. an inner surface of the first through hole includes a second inner surface region spaced apart from the first inner surface region in the second direction; the extension portion includes a second portion located between the second inner surface region and the center of the first through hole when viewed along the first direction, the exposed surface includes a second exposed region located between the second portion and the second inner surface region in the second direction, The electronic device according to claim 2 , wherein a length of the first exposed region in the second direction is different from a length of the second exposed region in the second direction.

11. an inner surface of the first through hole includes a second inner surface region spaced apart from the first inner surface region in the second direction; the extension portion includes a second portion located between the second inner surface region and the center of the first through hole when viewed along the first direction, The electronic device according to claim 2 , wherein a length of the first portion along the first direction is different from a length of the second portion along the first direction.

12. an inner surface of the first through hole includes a second inner surface region spaced apart from the first inner surface region in the second direction; the extension portion includes a second portion located between the second inner surface region and the center of the first through hole when viewed along the first direction, The electronic device according to claim 2 , wherein in a cross section taken along the first direction, a direction in which the first portion extends into the first through hole is different from a direction in which the second portion extends into the first through hole.

13. An electronic device described in any one of claims 1 to 3, wherein the shape of the first through hole when viewed along the first direction is different from a similar shape of the shape of the second through hole when viewed along the first direction.

14. 4. The electronic device according to claim 1, wherein the material of the extension portion is the same as the material of the conductive film portion.

15. A plurality of the conductive film portions; A plurality of the extension portions; Equipped with the substrate has a plurality of the first through holes, the insulating layer has a plurality of the second through holes aligned with the plurality of first through holes in the first direction, the conductive film portions are provided on the inner surfaces of the second through holes, respectively; 4. The electronic device according to claim 1, wherein the plurality of extension portions extend from the plurality of conductive film portions, respectively.

16. a first electrode and a second electrode provided on the insulating layer opposite the substrate; 4. The electronic device according to claim 1, wherein the first electrode and the second electrode face each other across the second through hole when viewed in the first direction.

17. The electronic device according to claim 16 , further comprising a wiring provided in the insulating layer, electrically connecting the first electrode and an element provided on the substrate.

18. The electronic device according to claim 16 , wherein the conductive film portion and the extension portion are electrically connected to the second electrode.

19. The electronic device according to claim 16 , wherein the conductive film portion and the extension portion are insulated from the first electrode.

20. another substrate disposed on the opposite side of the first electrode and the second electrode from the insulating layer, the another substrate having a third through hole; a first control electrode and a second control electrode provided in the third through hole and extending along the first direction; Furthermore, the third through hole extends in the first direction and is aligned with the first through hole and the second through hole in the first direction, When viewed along the first direction, the first control electrode and the second control electrode face each other across a center of the third through hole, the first control electrode is electrically connected to the first electrode; The electronic device of claim 16 , wherein the second control electrode is electrically connected to the second electrode.

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