Inspection system and inspection system temperature control method

The inspection system addresses temperature control issues by using film-like patterns and detection units to manage thermal mismatches, enhancing precision and yield in electronic device inspections.

JP2025144408APending Publication Date: 2025-10-02TOKYO ELECTRON LTD
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Patent Information

Application Number
JP2024044164
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-03-19
Publication Date
2025-10-02

AI Technical Summary

Technical Problem

Existing inspection systems struggle to accurately control the temperature of substrates during the inspection of electronic devices, leading to inconsistencies in electrical characteristics testing and potential yield reduction due to thermal mismatches and heat disturbances.

Method used

An inspection system with a substrate holding unit and probe card temperature control mechanism, utilizing film-like patterns and temperature detection units to adjust and maintain precise temperature control of the substrate and probe card, coupled with a control unit for managing heat flux and thermal expansion.

Benefits of technology

Enables accurate temperature control of substrates, improving electrical characteristics inspection precision and yield by minimizing thermal disturbances and maintaining consistent junction temperatures of electronic devices.

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Abstract

To provide an inspection system and inspection system temperature control method for inspecting a board while performing temperature control.SOLUTION: An inspection system for inspecting a board while performing temperature control comprises: a board holding unit for holding the board; an inspection unit for supplying inspection power to an electrode unit of the board; a board holding unit detection unit for detecting a detection value on a temperature of the board holding unit; a holding unit temperature adjustment mechanism for adjusting the temperature of the board holding unit; an inspection unit temperature detection unit for detecting a temperature of the inspection unit; and a control unit. The board holding unit detection unit has a film-like pattern in parallel with the board. The control unit inspects the board while performing temperature control of the board holding unit by the holding unit temperature adjustment mechanism.SELECTED DRAWING: Figure 4
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Description

[Technical Field]

[0001] TECHNICAL FIELD The present disclosure relates to an inspection system and a method for controlling the temperature of an inspection system. [Background technology]

[0002] Patent Document 1 discloses a power conversion device that can detect the voltage between the source and drain terminals of a power transistor during the on-period, and estimate the junction temperature of the power transistor with high accuracy. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-122107 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides an inspection system and a temperature control method for inspecting a substrate while controlling the temperature. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, an inspection system for inspecting a substrate while controlling temperature can be provided, comprising: a substrate holding unit for holding the substrate; an inspection unit for supplying inspection power to an electrode unit of the substrate; a substrate holding unit detection unit for detecting a detection value related to the temperature of the substrate holding unit; a holding unit temperature adjustment mechanism for adjusting the temperature of the substrate holding unit; an inspection unit temperature detection unit for detecting the temperature of the inspection unit; and a control unit, wherein the substrate holding unit detection unit has a film-like pattern parallel to the substrate, and the control unit inspects the substrate while controlling the temperature of the substrate holding unit using the holding unit temperature adjustment mechanism. [Effects of the Invention]

[0006] According to one aspect, it is possible to provide an inspection system that inspects a substrate while appropriately controlling the temperature, and a temperature control method for the inspection system. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a perspective view of an example of an inspection system. [Figure 2] FIG. 1 is a diagram illustrating an example of the configuration of an inspection system. [Figure 3] FIG. 2 is a plan view schematically illustrating an example of a configuration of a substrate. [Figure 4] FIG. 2 is a cross-sectional view illustrating an example of a configuration of a stage. [Figure 5] FIG. 2 is a cross-sectional view illustrating an example of a configuration of a stage. [Figure 6] FIG. 4 is a plan view showing an example of the arrangement of a temperature detection unit. [Figure 7] FIG. 1 is a schematic cross-sectional view showing an example of the arrangement of film patterns provided in an insulating film. [Figure 8] An example of a close-up view of an inspection system showing the vicinity of an electronic device. [Figure 9] 1 is a diagram showing an example of a heat flow model. [Figure 10] FIG. 10 is an example of a control diagram illustrating junction temperature control in a reference example. [Figure 11] FIG. 3 is an example of a control diagram illustrating junction temperature control in the first embodiment. [Figure 12] FIG. 10 is an example of a control diagram illustrating junction temperature control in the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] An inspection system 1, which is an example of an inspection system according to this embodiment, will be described with reference to Fig. 1. Fig. 1 is an example of a perspective view of the inspection system 1. Fig. 2 is an example of a configuration diagram of the inspection system 1. Note that Fig. 2 is a partial cross-sectional view that schematically illustrates components built into the inspection system 1.

[0010] In the semiconductor manufacturing process, a large number of electronic devices D (see FIG. 3 described later, also referred to as dies) having a predetermined circuit pattern are formed on a substrate W such as a semiconductor wafer. The formed electronic devices D are inspected for electrical characteristics and sorted into good and bad products. The inspection of the electronic devices D is performed, for example, using an inspection system 1 while the substrate W is in the state before the individual electronic devices D are separated.

[0011] The inspection system 1 performs temperature control while inspecting the electrical characteristics of a plurality of electronic devices D (see FIG. 3 described later) formed on a substrate W. That is, the inspection system 1 supplies inspection power to the electronic devices D when the electronic devices D are at or above a predetermined inspection temperature, and inspects the electrical characteristics and the like at that time.

[0012] The inspection system 1 includes a storage chamber 2 , a loader 3 , and a tester 4 .

[0013] The storage chamber 2 has a hollow housing 11. Inside the housing 11, the storage chamber 2 has a stage (also referred to as a "chuck") 10 on which the substrate W is placed. The stage 10 has a suction holder (not shown) that suction-holds the substrate W so that the relative position of the substrate W with respect to the stage 10 does not shift. The storage chamber 2 also has a movement mechanism (not shown) inside the housing 11 that moves the stage 10 horizontally and vertically. This movement mechanism adjusts the relative position of a probe card 12 (described later) and the substrate W, so that desired electrode portions E (see FIG. 3 described later) on the surface of the substrate W can be brought into contact with probes 12a of the probe card 12.

[0014] The accommodation chamber 2 has a probe card 12 inside a housing 11. The probe card 12 is arranged above the stage 10 so as to face the stage 10. The probe card 12 has a plurality of needle-shaped probes 12a arranged corresponding to electrode pads or solder bumps provided corresponding to the electrode portions E of each electronic device D on the substrate W. The probe card 12 is connected to a tester 4 via an interface 13. When testing electrical characteristics, each probe 12a comes into contact with the electrode portions E of each electronic device D on the substrate W, supplies power from the tester 4 to the electronic device D via the interface 13, and transmits signals from the electronic device D to the tester 4 via the interface 13.

[0015] The loader 3 is provided with a FOUP (Front Opening Unify Pod), which is a transport container that accommodates substrates W. The loader 3 also has a transport mechanism (not shown) that transports the substrates W. The transport mechanism removes the substrates W accommodated in the FOUP and transports them to a stage 10 in the accommodation chamber 2. The transport mechanism also receives the substrates W from the stage 10 after the inspection of the electrical characteristics of the electronic devices D has been completed, and accommodates them in the FOUP.

[0016] The tester 4 has a test board (not shown) that reproduces part of the circuit configuration of the motherboard on which the electronic device D is mounted. The test board of the tester 4 is connected to a tester computer 15 that judges the quality of the electronic device D based on signals from the electronic device D. The tester 4 can reproduce the circuit configurations of multiple types of motherboards by changing the test board. The probe card 12 has multiple probes 12a that are brought into contact with multiple electrode portions E of the electronic device D, respectively. The tester 4 also has multiple detection means for detecting electrical characteristics of the electronic device D. This allows the tester 4 to detect multiple electrical characteristics of the electronic device D.

[0017] The inspection system 1 also includes a user interface unit 16 for displaying information to a user and for the user to input instructions. The user interface unit 16 includes, for example, an input unit such as a touch panel or a keyboard, and a display unit such as a liquid crystal display.

[0018] As described above, the inspection system 1 includes a stage 10 as a substrate holding unit that holds the substrate W. The inspection system 1 also includes a probe card 12 having probes 12a, an interface 13, and a tester 4 as an inspection unit that detects electrical characteristics of the electronic device D by supplying inspection power to the electrode unit E of the electronic device D provided on the substrate W and inspects the electronic device D.

[0019] Furthermore, the loader 3 has a temperature control unit 14. The temperature control unit 14 has a power supply 25, a chiller 26, a power supply 55, and a control unit 90.

[0020] The stage 10 is provided with a heating unit 20 that heats the stage 10. A power supply 25 supplies power to the heating unit 20 provided on the stage 10. A coolant flow path 10a through which a heat transfer medium (antifreeze, etc.) flows is formed inside the stage 10. A chiller 26 circulates the temperature-adjusted heat transfer medium through the coolant flow path 10a. In this way, the inspection system 1 includes the heating unit 20, the power supply 25, the coolant flow path 10a, and the chiller 26 as a holder temperature adjustment mechanism that adjusts the temperature of the substrate holder. However, the configuration of the holder temperature adjustment mechanism is not limited to this.

[0021] The holder temperature adjustment mechanism also includes a temperature detection unit 30 (substrate holder detection unit) that detects the temperature of the substrate holder. The temperature detection unit 30 is provided on the stage 10 and detects the temperature Tchuck of the stage 10. The temperature Tchuck of the stage 10 detected by the temperature detection unit 30 is input to the control unit 90. Note that while the temperature detection unit 30 is illustrated as being a single unit, this is not limiting, and it is preferable to provide multiple temperature detection units 30 on the stage 10 for the electronic devices D that are supplied with power and generate heat. It is also preferable to switch the temperature detection unit 30 that detects the temperature Tchuck when switching the electronic devices D that are supplied with power and generate heat. It is also preferable to detect the temperature Tchuck based on a model that includes multiple temperature detection units 30.

[0022] The tester 4 is also provided with a temperature adjustment mechanism 50 that adjusts the temperature of the probe card 12. The temperature adjustment mechanism 50 may include a heater (not shown) that heats the probe card 12, a cooling fan (not shown) that air-cools the probe card 12, and the like. The power supply 55 supplies power to the temperature adjustment mechanism 50 provided in the tester 4. In this way, the inspection system 1 includes the temperature adjustment mechanism 50 as an inspection unit temperature adjustment mechanism that adjusts the temperature of the inspection unit. However, the configuration of the inspection unit temperature adjustment mechanism is not limited to this. The inspection unit temperature adjustment mechanism may also include a configuration that adjusts the temperature of the inspection unit by liquid cooling.

[0023] The inspection unit temperature adjustment mechanism also includes a temperature detection unit 60 (inspection unit temperature detection unit) that detects the temperature of the inspection unit. The temperature detection unit 60 is provided on the probe card 12 and detects the temperature Tprob of the probe card 12. The temperature Tprob of the probe card 12 detected by the temperature detection unit 60 is input to the control unit 90. While the temperature detection unit 60 has been described as being provided on the probe card 12, this is not limiting and the temperature detection unit may be a temperature detection unit that can detect a temperature that can represent the temperature of the probe. For example, the temperature detection unit 60 may be a temperature detection unit that detects the temperature of the probe 12a. Although the temperature detection unit 60 has been described as being provided on a single unit in the drawings, this is not limiting and it is preferable to provide multiple temperature detection units 60 on the probe card 12 for the electronic devices D that are supplied with power and generate heat. Furthermore, when switching the electronic devices D that are supplied with power and generate heat, it is preferable to also switch the temperature detection unit 60 that detects the temperature Tprob. Furthermore, it is preferable to detect the temperature Tprob based on a model including multiple temperature detection units 60.

[0024] The tester 4 also has a power detection unit 41 that detects the test power (current and voltage) supplied from the tester 4 to the electronic device D via the interface 13 and the probe card 12. The test power detected by the power detection unit 41 is input to the control unit 90.

[0025] The control unit 90 has a holding unit temperature control unit 91, an inspection unit temperature control unit 92, and an analysis unit 93. The control unit 90 controls the holding unit temperature adjustment mechanism and the inspection unit temperature adjustment mechanism so that the junction temperature Tj (temperature of the substrate W) of the electronic device D becomes the inspection temperature. The control unit 90 also controls the holding unit temperature adjustment mechanism and the inspection unit temperature adjustment mechanism so that the temperature difference between the substrate W and the probe card 12 is within a predetermined threshold value.

[0026] The holder temperature control unit 91 controls the holder temperature adjustment mechanism so that the temperature Tchuck of the substrate holder detected by the temperature detection unit 30 becomes the target temperature. While the illustrated embodiment illustrates a single temperature detection unit 30, this is not limiting. It is preferable to provide multiple temperature detection units 30 on the stage 10 for the electronic devices D that are supplied with power and generate heat. When switching between electronic devices D that are supplied with power and generate heat, it is also preferable to switch the temperature detection unit 30 that detects the temperature Tchuck. It is also preferable to detect the temperature Tchuck based on a model including multiple temperature detection units 30. That is, the holder temperature control unit 91 controls the power supply 25 to control the heat generation amount of the heating unit 20 and thereby control the temperature Tchuck of the stage 10. The holder temperature control unit 91 may also control the chiller 26 to control the temperature of the heat transfer medium supplied by the chiller 26 to the refrigerant flow path 10a, thereby controlling the temperature Tchuck of the stage 10.

[0027] The inspection unit temperature control unit 92 controls the inspection unit temperature adjustment mechanism so that the temperature Tprob detected by the temperature detection unit 60 becomes the target temperature. That is, the inspection unit temperature control unit 92 controls the temperature adjustment mechanism 50 by controlling the power supply 55, thereby controlling the temperature Tprob of the probe card 12. Note that while the temperature detection unit 60 is illustrated as being a single unit, this is not limiting, and it is preferable to provide multiple temperature detection units 60 on the probe card 12 for the electronic devices D that are supplied with power and generate heat. Furthermore, when switching the electronic devices D that are supplied with power and generate heat, it is also preferable to switch the temperature detection unit 60 that detects the temperature Tprob. Furthermore, it is preferable to detect the temperature Tprob based on a model including multiple temperature detection units 60.

[0028] The analysis unit 93 estimates the junction temperature Tj (temperature of the substrate W) of the electronic device D based on a heat flow model shown in FIG. 9 (to be described later). The control unit 90 then adjusts the Chuck Heat Flux (see heat flow Ic described later with reference to FIG. 9) so that the temperature Tchuck becomes the target temperature (holding unit target temperature). The control unit 90 may also be configured to adjust the Chuck Heat Flux (see heat flow Ic described later with reference to FIG. 9) so that the temperature Tchuck becomes the target temperature (holding unit target temperature) and the Probe Heat Flux (see heat flow Ip described later with reference to FIG. 9) so that the temperature Tprob becomes the target temperature (inspection unit target temperature). The holding unit temperature control unit 91 controls the holding unit temperature adjustment mechanism based on the holding unit target temperature calculated by the analysis unit 93. The inspection unit temperature control unit 92 controls the inspection unit temperature adjustment mechanism based on the inspection unit target temperature calculated by the analysis unit 93. There are multiple solutions for the holding unit target temperature and the inspection unit target temperature calculated by the analysis unit 93. In reality, about 40% of the heat also escapes from the electronic device D to the probe card 12. The amount of heat absorbed from the electronic device D to the probe card 12 is in a trade-off relationship with the difference in thermal expansion between the probe card 12 and the substrate W. The amount of heat absorbed from the electronic device D to the probe card 12 is calculated as the amount of heat absorbed when the probes 12a are within the range of the bonding pads (electrode portions E).

[0029] Next, the substrate W inspected in the above-described inspection system 1 will be described with reference to Fig. 3. Fig. 3 is a plan view schematically showing the configuration of the substrate W.

[0030] As shown in Fig. 3, a plurality of electronic devices D are formed on the surface of the substrate W at predetermined intervals by etching and wiring a substantially disk-shaped silicon substrate. Electrode portions E are formed on the surface of the electronic devices D, i.e., the surface of the substrate W, and the electrode portions E are electrically connected to the circuit elements inside the electronic devices D. By applying a voltage to the electrode portions E, a current can be passed through the circuit elements inside each electronic device D.

[0031] Next, an example of the configuration of the stage 10 will be described with reference to FIGS.

[0032] Fig. 4(a) is an example of a cross-sectional view illustrating the configuration of the stage 10. The stage 10 shown in Fig. 4(a) has a plate member 410. It also has an LED 431 (and an LED substrate 432 and a control substrate 451) as a heating unit 20 (see Fig. 2) that heats the stage 10. It also has a film pattern 415 as a temperature detection unit 30 (see Fig. 2).

[0033] The stage 10 includes a plate member 410, a light-transmitting member 420, and housings 430 and 440.

[0034] The plate member 410 is a member on which the substrate W is placed, and is formed in a substantially circular plate shape. The material of the plate member 410 is not limited, and may be any of metal, ceramic, glass, etc. The plate member 410 is a member that absorbs light irradiated from the LEDs 431 and is heated. The light-transmitting member 420 is a member (e.g., glass) that transmits the light irradiated from the LEDs 431. The light-transmitting member 420 is disposed below the plate member 410. The lower surface of the plate member 410 and the upper surface of the light-transmitting member 420 are adhered or joined together.

[0035] A refrigerant flow path 411 (corresponding to the refrigerant flow path 10a shown in FIG. 2) is formed in the plate member 410, and a heat transfer medium supplied from the chiller 26 (see FIG. 2) flows through the refrigerant flow path 411. Note that, although the refrigerant flow path 411 is illustrated as being formed by a recess formed in the lower surface of the plate member 410 and the upper surface of the light-transmitting member 420, the refrigerant flow path 411 is not limited to this and may be formed by a recess formed in the upper surface of the light-transmitting member 420 and the lower surface of the plate member 410, or may be formed within the plate member 410 or the light-transmitting member 420.

[0036] The housing 430 has an internal space and is disposed below the light-transmitting member 420. An LED substrate 432 on which a plurality of LEDs 431 (corresponding to the heating unit 20 shown in FIG. 2) are mounted is disposed in the internal space of the housing 430. A cooling block 440 is disposed below the housing 430. The cooling block 440 has a refrigerant flow path 441 through which a heat transfer medium flows, and cools the LED substrate 432 on which the LEDs 431 are mounted.

[0037] The housing 450 has an internal space and is disposed below the cooling block 440. A control board 451 is disposed in the internal space of the housing 450. The control board 451 receives power from the power source 25 (see FIG. 2), is connected to the LED board 432 via a cable (not shown), and controls the turning on and off of the LEDs 431. Light emitted from the LEDs 431 passes through the light-transmitting member 420 and is irradiated onto the plate member 410, heating the plate member 410. The control board 451 also turns on selected LEDs 431 from the plurality of LEDs 431. This allows a predetermined range (heating area) of the plate member 410 to be selectively heated.

[0038] On the upper surface of the plate member 410, a film pattern 415 (corresponding to the temperature detection section 30 shown in FIG. 2) and an insulating film 416 are provided.

[0039] The insulating film 416 is made of, for example, Al2O3, Cr2O3, TiO2, Y2O3, YSZ, ZnO, ZrSiO4, MgAl2O4, Y2SiO5, or Al6Si2O 13 The insulating film 416 is formed as a sprayed film of ceramics such as HfO2, Al2O3-TiO2, YF3, B4C, or AlN. The insulating film 416 is formed on the film pattern 415. The surface of the insulating film 416 (the surface on which the substrate W is placed) is preferably mirror-finished, thereby reducing the contact thermal resistance with the substrate W. The insulating film 416 may also be formed under the film pattern 415.

[0040] The film pattern 415 is a metal-based thin film (resistance temperature detector) formed in the insulating film 416 in a plane parallel to the substrate W placed on the substrate placement surface of the stage 10, and whose electrical resistance value changes with temperature. The film pattern 415 may be formed by thermal spraying, or may be formed by attaching a film pattern 415 that has been processed into a predetermined shape in advance. The film pattern 415 is disposed over the entire surface of the placement surface of the plate member 410 on which the substrate W is placed (see FIG. 6(a) described later). The film pattern 415 is connected to a first temperature detection controller (not shown) via wiring 415a. The first temperature detection controller detects the electrical resistance value of the film pattern 415 using, for example, a four-terminal resistance measurement method. The first temperature detection controller then detects the temperature of the stage 10 based on the detected electrical resistance value of the film pattern 415. The first temperature detection controller also transmits the detected temperature of the stage 10 to the control unit 90.

[0041] 4(a), the use of a film pattern 415 as the temperature detection unit 30 improves the degree of freedom in designing the refrigerant flow path 411 formed in the plate member 410, compared to the configuration shown in Fig. 4(b) described later. This allows the refrigerant flow path 411 to have a complex structure (for example, a three-dimensional structure) capable of absorbing high heat.

[0042] FIG. 4(b) is another example of a cross-sectional view illustrating the configuration of the stage 10. The stage 10 shown in FIG. 4(b) has a plate member 410. It also has an LED 431 (and an LED substrate 432 and a control substrate 451) as a heating unit 20 (see FIG. 2) that heats the stage 10. It also has a film pattern 415 and a plurality of temperature sensors 418 as a temperature detection unit 30 (see FIG. 2). The other configurations are similar, so redundant explanations will be omitted.

[0043] A sensor pipe 417 is provided within the plate member 410. A temperature sensor 418 is provided within the sensor pipe 417. A plurality of temperature sensors 418 are provided spaced apart from each other in the planar direction of the support surface of the plate member 410 on which the substrate W is placed (see FIG. 6(b) described below). The temperature sensors 418 are thermocouples or resistance temperature detectors whose electrical resistance changes with temperature. The temperature sensors 418 are connected to a second temperature detection controller (not shown) via wiring 418a. The second temperature detection controller detects the electrical resistance value of the temperature sensor 418 using, for example, a four-terminal resistance measurement method. The second temperature detection controller then detects the temperature of the stage 10 based on the detected electrical resistance value of the temperature sensor 418. The second temperature detection controller also transmits the detected temperature of the stage 10 to the control unit 90.

[0044] Fig. 5(a) is yet another example of a cross-sectional view illustrating the configuration of the stage 10. The stage 10 shown in Fig. 5(a) has a plate member 510 (and a water-cooling jacket 520). It also has a heater 535 as the heating unit 20 (see Fig. 2) that heats the stage 10. It also has a film pattern 515 as the temperature detection unit 30 (see Fig. 2).

[0045] The stage 10 includes a plate member 510 , a water-cooling jacket 520 , and housings 530 and 540 .

[0046] The plate member 510 is a member on which the substrate W is placed, and is formed in a substantially circular plate shape. The material of the plate member 510 is not limited, and may be metal, ceramic, glass, or the like. The lower surface of the plate member 510 and the upper surface of the water-cooling jacket 520 are adhered or joined together. The water-cooling jacket 520 has a refrigerant flow path 521 (corresponding to the refrigerant flow path 10a shown in FIG. 2) formed therein, through which a heat transfer medium supplied from the chiller 26 (see FIG. 2) flows.

[0047] The housing 530 has an internal space and is disposed below the water-cooling jacket 520 . A heater 535 (corresponding to the heating unit 20 shown in FIG. 2) is arranged in the internal space of the housing 530 in contact with the lower surface of the water-cooled jacket 520. The heater 535 is supplied with power from a power source 25 (see FIG. 2) and heats the plate member 510 via the water-cooled jacket 520. The heater 535 may be a multi-channel heater configured to be able to selectively heat a predetermined range (heating area) of the plate member 510.

[0048] On the upper surface of the plate member 510, a film pattern 515 (corresponding to the temperature detection section 30 shown in FIG. 2) and an insulating film 516 are provided.

[0049] The insulating film 516 is made of, for example, Al2O3, Cr2O3, TiO2, Y2O3, YSZ, ZnO, ZrSiO4, MgAl2O4, Y2SiO5, or Al6Si2O 13 The insulating film 516 is formed as a sprayed film of ceramics such as HfO2, Al2O3-TiO2, YF3, B4C, or AlN. The insulating film 516 is formed on the film pattern 515. The surface of the insulating film 516 (the surface on which the substrate W is placed) is preferably mirror-finished, thereby reducing the contact thermal resistance with the substrate W. The insulating film 516 may also be formed under the film pattern 515.

[0050] The film pattern 515 is a metal-based thin film (resistance temperature detector) formed in a plane parallel to the substrate W placed on the substrate placement surface of the stage 10 within the insulating film 516, and whose electrical resistance value changes with temperature. The film pattern 515 may be formed by thermal spraying, or by attaching a film pattern 415 that has been processed into a predetermined shape in advance. The film pattern 515 is formed over the entire surface of the placement surface of the plate member 510 on which the substrate W is placed (see FIG. 6(a) described later). The film pattern 515 is connected to a first temperature detection controller (not shown) via wiring 515a. The first temperature detection controller detects the electrical resistance value of the film pattern 515 using, for example, a four-terminal resistance measurement method. The first temperature detection controller then detects the temperature of the stage 10 based on the detected electrical resistance value of the film pattern 515. The first temperature detection controller also transmits the detected temperature of the stage 10 to the control unit 90.

[0051] Fig. 5(b) is yet another example of a cross-sectional view illustrating the configuration of the stage 10. The stage 10 shown in Fig. 5(a) has a plate member 510 (and a water-cooling jacket 520). It also has a heater 535 as the heating unit 20 (see Fig. 2) that heats the stage 10. It also has a film pattern 515 and a plurality of temperature sensors 518 as the temperature detection unit 30 (see Fig. 2). The other configurations are similar, so redundant explanations will be omitted.

[0052] A sensor pipe 517 is provided within the plate member 510. A temperature sensor 518 is provided within the sensor pipe 517. A plurality of temperature sensors 518 are provided spaced apart from each other in the planar direction of the support surface of the plate member 410 on which the substrate W is placed (see FIG. 6(b) described below). The temperature sensors 518 are thermocouples or resistance temperature detectors whose electrical resistance changes with temperature. The temperature sensors 518 are connected to a second temperature detection controller (not shown) via wiring 518a. The second temperature detection controller detects the electrical resistance value of the temperature sensor 518 using, for example, a four-terminal resistance measurement method. The second temperature detection controller then detects the temperature of the stage 10 based on the detected electrical resistance value of the temperature sensor 518. The second temperature detection controller also transmits the detected temperature of the stage 10 to the control unit 90.

[0053] 6A and 6B are plan views showing an example of the arrangement of the temperature detection unit 30 (film pattern 415, temperature sensor 418). FIG. 6A is a plan view showing an example of the arrangement of the film pattern 415. FIG. 6B is a plan view showing an example of the arrangement of the temperature sensor 418. In addition, in FIGS. 6A and 6B, areas P1 and P2 indicate examples of areas where the electronic device D to be inspected is arranged.

[0054] The arrangement of the film pattern 515 is the same as the arrangement of the film pattern 415 shown in FIG. 6(a), and the arrangement of the temperature sensor 518 is the same as the arrangement of the temperature sensor 418 shown in FIG. 6(b), so redundant explanations will be omitted.

[0055] As shown in FIG. 6(a), the film pattern 415 is disposed in a continuous manner over the entire substrate mounting surface of the stage 10 (plate member 410). The film pattern 415 is formed in a single stroke, meandering within the surface. The film pattern 415 is formed in a curved band shape, and passes through all of the multiple regions (e.g., regions P1 and P2) in which the electronic devices D are arranged. The film pattern 415 has one end to which a wiring 415a is connected and the other end to which another wiring 415a is connected, and passes through the multiple regions in which the electronic devices D are arranged while moving from one end to the other end. Preferably, the lengths (areas) of the film pattern 415 passing through each region (e.g., regions P1 and P2) in which the electronic devices D are arranged are equal to each other.

[0056] Furthermore, when the electrical resistance value of the film pattern 415 is detected using a four-terminal resistance measurement method, four wires 415a are connected to one film pattern 415.

[0057] In the example of FIG. 6(a), it has been described that one film pattern 415 is formed within the surface of the stage 10 (plate member 410), but the present invention is not limited to this.

[0058] FIG. 7 is an example of a schematic cross-sectional view showing the arrangement of the film pattern 415 provided in the insulating film 416. In FIG.

[0059] 4, a film pattern 415 is formed on the upper surface of a plate member 410. In contrast to this, the film pattern 415 may be provided inside an insulating film 416, as shown in FIG.

[0060] 7(b) and 7(c), the film pattern 415 may be provided in a plurality of layers inside the insulating film 416. As shown in FIG. 7(b), the film patterns 415 provided in a plurality of layers may be connected in parallel. As shown in FIG. 7(c), the film patterns 415 provided in a plurality of layers may be connected in series. This allows the resistance value of the film pattern 415 to be adjusted.

[0061] Furthermore, the film pattern 415 may have a plurality of film patterns, as long as they are uniformly arranged on the upper surface of the stage 10 (plate member 410).

[0062] In this case, each of the plurality of film patterns may be arranged so as to pass through all of the plurality of regions (e.g., regions P1, P2) in which the electronic devices D are arranged. Alternatively, the plurality of regions (e.g., regions P1, P2) in which the electronic devices D are arranged may be divided into several groups, and one film pattern may be arranged for each group, and the film pattern may be arranged so as to pass through all of the plurality of regions in that group.

[0063] Furthermore, the film pattern 415 is not limited to the configuration shown in FIG. 6(a), and may have a shape that branches along the way.

[0064] As shown in Fig. 6(b), a plurality of temperature sensors 418 (16 in the example of Fig. 6(b)) are arranged at predetermined intervals. When the electrical resistance value of the temperature sensors 418 is detected using a four-terminal resistance measurement method, 64 wires 418a are connected to the 16 temperature sensors 418.

[0065] Here, when testing a high-heat-generating electronic device D such as a GPU (Graphics Processing Unit), it is necessary to perform heat absorption control by temperature feedback control to counteract disturbances from chip heat generation and maintain a constant temperature of the electronic device D. In response to this, by using a stage 10 that can be heated in each region as shown in Figures 4 and 5, the temperature of the electronic device D can be raised and lowered at high speed.

[0066] The temperature detection by the temperature sensor 418 varies depending on whether the area where the electronic device D to be inspected is placed is area P1 or area P2. This difference in distance causes the responsiveness of the temperature detected by the temperature sensor 418 to temperature changes in the electronic device D to be distance-dependent. For this reason, temperature control is performed by performing distance-dependent correction for each of areas P1 and P2 where the electronic device D to be inspected is placed. In addition, the temperature sensor 418 is embedded in the plate member 410 via a sensor pipe 417. For this reason, the vertical (thickness) distance from the electronic device D to be inspected to the temperature sensor 418 is also long.

[0067] In contrast, in temperature detection using the film pattern 415, when the electronic device D to be inspected generates heat, the temperature of the film pattern 415 rises instantaneously, and at the same time, the electrical resistance value of the film pattern 415 also changes instantaneously. Furthermore, the film pattern 415 is formed on the entire surface of the stage 10 (plate member 410), and temperature can be detected with one film pattern 415 in any region (e.g., regions P1, P2). Furthermore, the distance from the electronic device D to the film pattern 415 is the same in any region (e.g., regions P1, P2), so that the distance dependency of the detected temperature of the film pattern 415 relative to temperature changes of the electronic device D can be eliminated.

[0068] Furthermore, multiple second temperature detection controllers are used depending on the number of temperature sensors 418. In contrast, one first temperature detection controller can perform temperature detection for one film pattern 415 provided on the entire surface.

[0069] In this way, temperature detection using the film pattern 415 can improve the responsiveness of the detected temperature to temperature changes of the electronic device D. Furthermore, temperature detection using the film pattern 415 can eliminate the distance dependency between the regions P1 and P2.

[0070] In addition, the temperature may be detected for each region P1, P2 in which the electronic device D is placed, taking into consideration the pattern occupation area, the thickness of the film pattern 415, the thickness of the insulating film 416 from the back surface of the substrate W to the film pattern 415, variations in temperature distribution due to the arrangement of the refrigerant flow path 411, etc.

[0071] In this way, by using the temperature detection by the film pattern 415, it is possible to suitably detect the temperature Tchuck of the stage 10. Furthermore, by using the temperature detection by the film pattern 415, it is possible to estimate the junction temperature Tj of the electronic device D, which will be described later with reference to Figures 8 and 9, etc., with good responsiveness. This makes it possible to speed up the temperature control of the junction temperature Tj of the electronic device D.

[0072] The heating unit 20 has a mode for selectively heating an area corresponding to the electronic device D to be inspected, and a mode for heating the entire surface of the stage 10. In the mode for heating the entire surface of the stage 10, the temperature of the stage 10 may be detected from the electrical resistance value of the film pattern 415, and the detected temperature may be output as the temperature of the stage 10. In addition, in the mode for selectively heating an area corresponding to the electronic device D to be inspected, the temperature change of the target area of ​​the stage 10 is estimated from the change in the electrical resistance value of the film pattern 415, and the temperature of the target area of ​​the stage 10 is estimated.

[0073] FIG. 8 is an example of an enlarged view of the inspection system 1, showing the vicinity of the electronic device D.

[0074] When the electrical characteristics and the like of the electronic device D are inspected, the substrate W is held on the stage 10. That is, the electronic device D is thermally connected to the stage 10. Furthermore, when the electrical characteristics and the like of the electronic device D are inspected, the probes 12a are in contact with the electrode portions E of the electronic device D. That is, the electronic device D is thermally connected to the probe card 12 via the probes 12a. Furthermore, the probe card 12 is in contact with the interface 13, and the interface 13 is in contact with the tester 4. That is, the probe card 12 is thermally connected to the tester 4 via the interface 13, and the tester 4 is thermally connected to the electronic device D via the probe card 12.

[0075] The temperature Tchuck of the stage 10 is detected by the temperature detection unit 30. The temperature Tprob of the probe card 12 is detected by the temperature detection unit 60.

[0076] Here, by passing a current through a PN junction (e.g., a transistor) formed in the electronic device D, the junction temperature Tj of the electronic device D can be detected from the correlation between the generated electromotive force and temperature. However, when inspecting the electronic device D, such as a logic IC, under conditions where a clock is generated, the junction temperature Tj may not be detected properly due to the influence of noise, etc.

[0077] Furthermore, when the electronic device D is inspected, a temperature difference occurs between the temperature Tchuck of the stage 10 and the junction temperature Tj of the electronic device D due to the thermal resistance between the stage 10 and the substrate W (electronic device D). For this reason, when the electronic device D is inspected by controlling the temperature so that the temperature Tchuck of the stage 10 is equal to the inspection temperature, the junction temperature Tj of the electronic device D may become higher than the inspection temperature. In other words, the electronic device D is inspected at a temperature higher than the inspection temperature, which may reduce the yield of the electronic device D.

[0078] Furthermore, when the electronic device D is inspected by controlling the temperature so that the temperature Tchuck of the stage 10 becomes the inspection temperature, the heat flow from the electronic device D to the inspection unit becomes a disturbance.

[0079] The substrate W is mainly made of, for example, silicon. The probe card 12 is mainly made of, for example, glass epoxy. The temperature difference between the substrate W and the probe card 12 causes a difference in thermal expansion, which may cause the probes 12a to come off the electrode portions E.

[0080] Next, a description will be given of temperature control in the inspection system 1 according to this embodiment. Fig. 9 is an example of a diagram showing a heat flow model.

[0081] 9 shows the heat flow Id of the electronic device D, the thermal resistance Rd of the electronic device D, the heat capacity Cd of the electronic device D, and the junction temperature Tj of the electronic device D. Also shown are the heat flow Ip of the probe card 12, the thermal resistance Rp of the probe card 12, the heat capacity Cp of the probe card 12, the temperature of the probe card 12 (probe card temperature) Tprob, the heat flow Idp from the probe card 12 to the electronic device D, and the thermal resistance Rdp from the probe card 12 to the electronic device D. Also shown are the heat flow Ic of the stage 10, the thermal resistance Rc of the stage 10, the heat capacity Cc of the stage 10, the temperature (chuck temperature) Tchuck of the stage 10, the heat flow Idc from the stage 10 to the electronic device D, and the thermal resistance Rdc from the stage 10 to the electronic device D. In addition, in Figure 9, the temperature detection unit 30 (see Figures 2 and 4) that detects the temperature Tchuck is described as being single, but performance can be further improved by arranging and switching between multiple temperature detection units 30 or by detecting the temperature Tchuck based on a model that includes multiple temperature detection units 30.

[0082] Here, the various thermal resistances and heat capacities are values ​​(obtainable values) that are determined in advance depending on the configurations of the substrate holder, the substrate W, and the inspection unit.

[0083] The heat flow Id of the electronic device D corresponds to the heat flow due to the test power detected by the power detection unit 41. The heat flow Ic of the stage 10 corresponds to the heat flow in the holder temperature adjustment mechanism. The heat flow Ip of the probe card 12 corresponds to the heat flow in the test unit temperature adjustment mechanism. That is, the heat flows Id, Ic, and Ip are values ​​that can be detected by the control unit 90.

[0084] Furthermore, the temperature of the stage 10 (chuck temperature) Tchuck corresponds to the temperature detected by the temperature detection unit 30. The temperature of the probe card 12 (probe card temperature) Tprob corresponds to the temperature detected by the temperature detection unit 60. In other words, the temperatures Tchuck and Tprob are values ​​that can be detected by the control unit 90.

[0085] On the other hand, the junction temperature Tj of the electronic device D is a temperature that the control unit 90 cannot measure directly.

[0086] In the heat flow model shown in FIG. 9, the differential value of the junction temperature Tj (Tj dot), the differential value of the temperature Tprob of the probe card 12 (Tprob dot), and the differential value of the temperature Tchuck of the stage 10 (Tchuck dot) can be expressed by the following equations.

[0087]

number

[0088] Here, if X1=Tj, X2=Tchuck, X3=Tprob, U1=id, U2=ic, and U3=ip, this can be expressed by the following equation.

[0089]

number

[0090] That is, the above equations are expressed as dx / dt=Ax(t)+Bu(t) and y(t)=Cx(t).

[0091] Next, a control method for controlling the junction temperature Tj using the observer 940 will be described with reference to FIGS.

[0092] 10 is an example of a control diagram illustrating junction temperature control in a reference example. Here, an example will be described in which control is performed based on temperatures detected by a plurality of temperature sensors 418 without using the film pattern 415.

[0093] Reference numeral 901 denotes the set temperature (SV) of the junction temperature Tj. Reference numeral 902 denotes the power (DUT_Power) supplied to the electronic device D. Reference numeral 903 denotes the temperature (Probe_Temperature) of the probe card 12. Reference numeral 904 denotes a signal (Test_Mode) for switching modes.

[0094] Reference numeral 910 denotes a temperature regulator (heating unit 20, chiller 26) of the stage 10. Reference numeral 920 denotes a tester 4. Reference numeral 930 denotes a model of the stage 10 (hereinafter also referred to as a chuck model). Reference numeral 940 denotes an observer of the junction temperature Tj. Reference numeral 945 denotes a switch. Reference numerals 961 and 962 denote adders.

[0095] The set temperature (SV) of the junction temperature Tj is input to the temperature regulator 910. Furthermore, during normal operation (when the switch 945 is in the OFF state), the temperature (RTD Sensor) detected by the temperature sensor 418 observed by the chuck model 930 is fed back to the temperature regulator 910. Furthermore, during testing (when the switch 945 is in the ON state), the temperature (RTD Sensor) detected by the temperature sensor 418 observed by the chuck model 930 is input as a temperature offset (see adder 961) by the junction temperature Tj (Estimate Tj) estimated by the observer 940. Heating (Heater MV) and cooling (Cooler MV) are output from the temperature regulator 910 to the chuck model 930.

[0096] The tester 920 receives as input the power (DUT_Power) supplied to the electronic device D. The heat generated by the electronic device D is added as a disturbance to the heating (Heater MV) of the temperature regulator 910 (see adder 962), and the result is output to the chuck model 930.

[0097] The chuck model 930 monitors and outputs the temperature detected by the temperature sensor 418 (RTD Sensor).

[0098] The observer 940 receives as input the temperature detected by the temperature sensor 418 (Chuck Sensor In), the temperature of the probe card 12 (Probe Temperature In), and the power supplied to the electronic device D (DUT Power). Then, the observer 940 estimates and outputs the junction temperature Tj (Estimate Tj).

[0099] Here, in a configuration in which the temperature is detected by the temperature sensor 418, the positional relationship between the electronic device D under test and the temperature sensor 418 differs for each electronic device D. Specifically, in the heat flow model shown in Fig. 9, the combination of the thermal resistance Rdc from the stage 10 to the electronic device D, the thermal resistance Rc of the stage 10, and the heat capacity Cc of the stage 10 differs for each position of the electronic device D. Therefore, in order to accurately estimate the junction temperature Tj, it is necessary to prepare a huge table recording the thermal resistance Rdc, the thermal resistance Rc, and the heat capacity Cc for each position of the electronic device D under test, or to provide a temperature sensor 418 for each position of the electronic device D.

[0100] 11 is an example of a control diagram illustrating junction temperature control in the first embodiment. Here, an example is described in which the stage 10 shown in FIG. 4(a) or FIG. 5(a) is used and control is performed based on the detection value detected by the film pattern 415.

[0101] Reference numeral 901 denotes the set temperature (SV) of the junction temperature Tj. Reference numeral 902 denotes the power (DUT_Power) supplied to the electronic device D. Reference numeral 903 denotes the temperature (Probe_Temperature) of the probe card 12. Reference numeral 904 denotes a signal (Test_Mode) for switching modes.

[0102] Reference numeral 910 denotes a temperature regulator (heating unit 20, chiller 26) of the stage 10. Reference numeral 920 denotes a tester 4. Reference numeral 931 denotes a model of the stage 10 (hereinafter also referred to as a chuck model). Reference numeral 940 denotes an observer of the junction temperature Tj. Reference numeral 945 denotes a switch. Reference numeral 950 denotes a compensator that compensates for the temperature of the stage 10. Reference numerals 961 and 962 denote adders.

[0103] The set temperature (SV) of the junction temperature Tj is input to the temperature regulator 910. Furthermore, during normal operation (when the switch 945 is OFF), the stage temperature (Tchuck) compensated by the compensator 950 is fed back to the temperature regulator 910. Furthermore, during testing (when the switch 945 is ON), a temperature obtained by offsetting (see adder 961) the stage temperature (Tchuck) compensated by the compensator 950 by the junction temperature Tj (Estimate Tj) estimated by the observer 940 is input. Heating (Heater MV) and cooling (Cooler MV) are output from the temperature regulator 910 to the chuck model 930.

[0104] The tester 920 receives as input the power (DUT_Power) supplied to the electronic device D. The heat generated by the electronic device D is added as a disturbance to the heating (Heater MV) of the temperature regulator 910 (see adder 962), and the result is output to the chuck model 930.

[0105] The chuck model 931 observes and outputs the detection value (Pattern Sensor) detected by the film pattern 415. The detection value detected by the film pattern 415 is, for example, the amount of change in the electrical resistance value of the film pattern 415.

[0106] The compensator 950 calculates and outputs the stage temperature (Tchuck) based on the detection value (Pattern Sensor) detected by the film pattern 415.

[0107] The observer 940 receives as input the detection value (Chuck Sensor In) detected by the film pattern 415, the temperature of the probe card 12 (Probe Temperature In), and the power (DUT Power) supplied to the electronic device D. Then, the observer 940 estimates and outputs the junction temperature Tj (Estimate Tj).

[0108] Here, in a configuration in which the temperature is detected by the film pattern 415, it is possible to detect the temperature with the same characteristics regardless of the position of the electronic device D to be inspected. In other words, in the heat flow model shown in Fig. 9, the combination of the thermal resistance Rdc from the stage 10 to the electronic device D, the thermal resistance Rc of the stage 10, and the heat capacity Cc of the stage 10 can be used in common regardless of the position of the electronic device D. This makes it possible to improve the accuracy of estimating the junction temperature Tj.

[0109] Fig. 12 is an example of a control diagram illustrating junction temperature control in the second embodiment. Here, an example is described in which the stage 10 shown in Fig. 4(b) or Fig. 5(b) is used and control is performed based on the detection value of the film pattern 415 and temperatures detected by the multiple temperature sensors 418.

[0110] Reference numeral 901 denotes the set temperature (SV) of the junction temperature Tj. Reference numeral 902 denotes the power (DUT_Power) supplied to the electronic device D. Reference numeral 903 denotes the temperature (Probe_Temperature) of the probe card 12. Reference numeral 904 denotes a signal (Test_Mode) for switching modes.

[0111] Reference numeral 910 denotes a temperature regulator (heating unit 20, chiller 26) of the stage 10. Reference numeral 920 denotes a tester 4. Reference numeral 932 denotes a model of the stage 10 (hereinafter also referred to as a chuck model). Reference numeral 940 denotes an observer of the junction temperature Tj. Reference numeral 945 denotes a switch. Reference numerals 961 and 962 denote adders.

[0112] The set temperature (SV) of the junction temperature Tj is input to the temperature regulator 910. Furthermore, during normal operation (when the switch 945 is in the OFF state), the temperature (RTD Sensor) detected by the temperature sensor 418 observed by the chuck model 930 is fed back to the temperature regulator 910. Furthermore, during testing (when the switch 945 is in the ON state), the temperature (RTD Sensor) detected by the temperature sensor 418 observed by the chuck model 930 is input as a temperature offset (see adder 961) by the junction temperature Tj (Estimate Tj) estimated by the observer 940. Heating (Heater MV) and cooling (Cooler MV) are output from the temperature regulator 910 to the chuck model 930.

[0113] The tester 920 receives as input the power (DUT_Power) supplied to the electronic device D. The heat generated by the electronic device D is added as a disturbance to the heating (Heater MV) of the temperature regulator 910 (see adder 962), and the result is output to the chuck model 930.

[0114] The chuck model 931 observes and outputs the temperature (RTD Sensor) detected by the temperature sensor 418 and the detection value (Pattern Sensor) detected by the film pattern 415. The detection value detected by the film pattern 415 is, for example, the amount of change in the electrical resistance value of the film pattern 415.

[0115] The observer 940 receives as input the detection value (Chuck Sensor In) detected by the film pattern 415, the temperature of the probe card 12 (Probe Temperature In), and the power (DUT Power) supplied to the electronic device D. Then, the observer 940 estimates and outputs the junction temperature Tj (Estimate Tj).

[0116] Here, in a configuration in which the temperature is detected by the film pattern 415, it is possible to detect the temperature with the same characteristics regardless of the position of the electronic device D to be inspected. In other words, in the heat flow model shown in Fig. 9, the combination of the thermal resistance Rdc from the stage 10 to the electronic device D, the thermal resistance Rc of the stage 10, and the heat capacity Cc of the stage 10 can be used in common regardless of the position of the electronic device D. This makes it possible to improve the accuracy of estimating the junction temperature Tj.

[0117] Furthermore, the compensator 950 (see FIG. 11) that calculates the stage temperature (Tchuck) can be eliminated.

[0118] As described above, the control unit 90 inspects the substrate W while adjusting the temperature control performed by the holder temperature adjustment mechanism.

[0119] This allows the electronic device D to be at the inspection temperature when inspecting the electronic device D, and the inspection can be carried out suitably. Also, a decrease in the yield of the electronic device D can be prevented.

[0120] Furthermore, compared to a configuration in which the electronic device is provided with an electrode portion E that is used only to detect the junction temperature Tj, the packaging cost of the electronic device D can be reduced. Also, the number of probes 12a provided on the probe card 12 can be reduced.

[0121] Furthermore, the control unit 90 controls the holder temperature adjustment mechanism so that the junction temperature Tj becomes the test temperature. As a result, when testing the electronic device D, the junction temperature Tj of the electronic device D can be set to the test temperature, allowing the test to be performed suitably. Furthermore, a decrease in the yield of the electronic device D can be prevented.

[0122] The above describes the inspection system 1, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0123] W substrate D. Electronic Devices E Electrode section 1. Inspection system 2. Containment Cell 3 Loader 4 Tester (Inspection Department) 10 Stage (substrate holder) 10a refrigerant flow path 12 Probe card (inspection section) 12a Probe (testing part) 13 Interface (Inspection Department) 14 Temperature Control Unit 20 Heating section 25 Power supply 26 Chiller 30 Temperature detection unit (substrate holder detection unit) 41 Power detection unit 50 Temperature control mechanism 55 Power supply 60 Temperature detection unit (inspection unit temperature detection unit) 90 Control Unit 91 Holding unit temperature control unit 92 Inspection unit temperature control unit 93 Analysis Department 60 Temperature detection unit 415,515 Membrane pattern (substrate holding part detection part) 416,516 Insulating film 418,518 Temperature sensor (substrate holder detection part)

Claims

1. An inspection system for inspecting a substrate while controlling temperature, comprising: a substrate holder for holding the substrate; an inspection unit that supplies inspection power to an electrode unit of the substrate; a substrate holder detection unit that detects a detection value related to the temperature of the substrate holder; a holder temperature adjustment mechanism for adjusting the temperature of the substrate holder; an inspection unit temperature detection unit that detects the temperature of the inspection unit; a control unit, the substrate holder detection unit has a film-like pattern parallel to the substrate; The control unit inspecting the substrate while controlling the temperature of the substrate holder by the holder temperature adjustment mechanism; Inspection system.

2. The film pattern is The substrate holder is disposed in a continuous manner over the entire substrate placement surface. The inspection system of claim 1 .

3. The control unit a temperature of the substrate is estimated based on the inspection power, the temperature of the inspection unit detected by the inspection unit temperature detection unit, and a detection value of the substrate holding unit detection unit; The inspection system of claim 1 .

4. the temperature of the substrate is the junction temperature of the substrate estimated from a model; The inspection system of claim 3 .

5. the detection value of the substrate holding part detection part is the amount of change in the electrical resistance value of the film pattern; The inspection system of claim 1 .

6. The substrate holder detection unit a temperature sensor for detecting the temperature of the film pattern and the substrate holder; The inspection system of claim 1 .

7. The temperature sensor is a thermocouple or a resistance temperature detector. The inspection system of claim 6 .

8. The control unit estimating a junction temperature from a model based on the inspection power, the temperature of the inspection unit detected by the inspection unit temperature detection unit, and the detection value of the film pattern detected by the substrate holding unit detection unit; inspecting the substrate while controlling the temperature of the holder temperature adjustment mechanism based on the temperature detected by the temperature sensor; The inspection system of claim 6 .

9. the detected value of the film pattern is a change in the electrical resistance value of the film pattern; The inspection system of claim 8 .

10. A temperature control method for an inspection system that inspects a substrate while controlling the temperature, the inspection system comprising: a substrate holding unit that holds a substrate; an inspection unit that supplies inspection power to an electrode unit of the substrate; a substrate holding unit detection unit that detects a detected value related to the temperature of the substrate holding unit; a holding unit temperature adjustment mechanism that adjusts the temperature of the substrate holding unit; and an inspection unit temperature detection unit that detects the temperature of the inspection unit, the method comprising: the substrate holder detection unit has a film-like pattern parallel to the substrate, inspecting the substrate while controlling the temperature of the substrate holder by the holder temperature adjustment mechanism; A method for controlling the temperature of an inspection system.

11. a temperature of the substrate is estimated based on the inspection power, the temperature of the inspection unit detected by the inspection unit temperature detection unit, and a detection value of the substrate holding unit detection unit; The method for controlling the temperature of an inspection system according to claim 10.

12. the temperature of the substrate is the junction temperature of the substrate estimated from a model; The method for controlling the temperature of an inspection system according to claim 11.

13. the detection value of the substrate holding part detection part is the amount of change in the electrical resistance value of the film pattern; The method for controlling the temperature of an inspection system according to claim 10.

Citation Information

Patent Citations

  • Power conversion equipment and semiconductor device

    JP2019122107A