Substrate processing device

Abstract

To provide a substrate processing device for positioning an edge ring.SOLUTION: In a substrate processing device, a substrate support unit 11 includes: an electrostatic chuck 1111 that has a substrate support surface 111a and a ring support surface 111b and in which a first through hole 1111c into which a lift pin 115 is inserted is formed on the ring support surface; a cylindrical member 113 which is inserted into the first through hole and in which a second through hole 113a is formed; a first ring 1122 in which a third through hole 1122f communicating with the second through hole is formed and which is supported on the ring support surface; and a rod 114 inserted into the second ring 1121 disposed on the first ring, the second through hole, and the third through hole. The cylindrical member includes a first shaft unit and a first head unit. The first ring is provided with a first groove portion 1122e formed on a lower surface of the first ring, communicating with the third through hole, and on which the first head unit is disposed. The rod has a second shaft unit and a second head unit having a smaller diameter than that. The second ring has a second groove portion 1121a in which the second head unit is disposed.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses an apparatus for processing a substrate, the apparatus comprising: a substrate support; an electrostatic chuck disposed on the substrate support and including a first portion, a second portion, and a third portion; and a processing kit surrounding the electrostatic chuck, the processing kit comprising: a support ring disposed on a surface of the third portion of the electrostatic chuck; an edge ring disposed on a surface of the second portion of the electrostatic chuck and movable independently with respect to the support ring; and a cover ring disposed on the support ring and having a first surface in contact with the support ring. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2019-505088 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate processing apparatus for positioning an edge ring. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, there is provided an electrostatic chuck having a substrate support surface and a ring support surface, the ring support surface being formed with a first through hole through which a lift pin is inserted; a cylindrical member inserted into the first through hole of the electrostatic chuck and having a second through hole; a first ring having a third through hole communicating with the second through hole of the cylindrical member and supported by the ring support surface; a second ring disposed on the first ring; and a rod inserted into the second through hole and the third through hole, wherein the cylindrical member has a first shaft portion inserted into the first through hole of the electrostatic chuck and a front shaft portion a first head portion disposed on the ring support surface of the electrostatic chuck when the first shaft portion is inserted into the first through hole of the electrostatic chuck, the first ring having a first groove portion provided on a lower surface of the first ring, communicating with the third through hole, and in which the first head portion is disposed, the rod having a second shaft portion inserted into the second through hole and the third through hole, and a second head portion provided above the second shaft portion and having a smaller diameter than the second shaft portion, the second ring having a second groove portion provided on a lower surface of the second ring, and in which the second head portion is disposed. [Effects of the Invention]

[0006] According to one aspect, a substrate processing apparatus for positioning an edge ring can be provided. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] FIG. 1 is a diagram illustrating an example of the configuration of an inductively coupled plasma processing apparatus. [Figure 3] FIG. 3 is an example of an enlarged cross-sectional view of one of the substrate support parts according to the first embodiment. [Figure 4] FIG. [Figure 5] FIG. 10 is an example of a perspective view illustrating a positioning structure of an under-ring. [Figure 6] 10A and 10B are schematic diagrams illustrating an example of a positioning structure for an under-ring. [Figure 7] FIG. 10 is a perspective view illustrating an example of a positioning structure for an inner ring. [Figure 8] 10A and 10B are schematic diagrams illustrating an example of a positioning structure for an inner ring. [Figure 9] FIG. 10 is another example of an enlarged cross-sectional view of the substrate support portion according to the second embodiment. [Figure 10] FIG. 2 is a schematic cross-sectional view showing the shapes of an inner ring and an under ring. [Figure 11] 10A and 10B are cross-sectional views illustrating an example of a centering method. [Figure 12] 10A and 10B are cross-sectional views illustrating an example of a centering method. [Figure 13] 4 is a schematic cross-sectional view showing an example of the shape of the outer peripheral side portion of the inner ring and the under ring. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is an example diagram illustrating an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus (substrate processing apparatus) 1 and a controller 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (see FIG. 2) described later, and the gas exhaust port is connected to an exhaust system 40 (see FIG. 2) described later. The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of an inductively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is an example of a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus.

[0013] The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 101. The plasma processing apparatus 1 also includes a substrate support 11, a gas inlet, and an antenna 14. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, a sidewall 102 of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a bias electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple bias electrodes. Alternatively, the electrostatic electrode 1111b may function as a bias electrode. Therefore, the substrate support 11 includes at least one bias electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings 1120 (see FIG. 3, etc., described later) and at least one cover ring 1123 (see FIG. 3, etc., described later). The edge ring 1120 is formed of a conductive material or an insulating material, and the cover ring 1123 is formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The gas inlet is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas inlet includes a center gas injector (CGI) 13. The center gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the dielectric window 101. The center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c. The process gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c. Note that the gas inlet may include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 102 in addition to or instead of the center gas injector 13.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the gas inlet through a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. Furthermore, by supplying a bias RF signal to the at least one bias electrode, a bias potential is generated on the substrate W, thereby attracting ions in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the antenna 14 via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0022] The second RF generating unit 31b is coupled to at least one bias electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to at least one bias electrode and configured to generate a bias DC signal. The generated bias DC signal is applied to the at least one bias electrode.

[0024] In various embodiments, the bias DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one bias electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the bias DC generator 32a and at least one bias electrode. Thus, the bias DC generator 32a and the waveform generator constitute a voltage pulse generator. The voltage pulses may have either positive or negative polarity. The sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second RF generator 31b.

[0025] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generator may be connected to both the outer coil and the inner coil, or separate RF generators may be connected to the outer coil and the inner coil separately.

[0026] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] Next, the substrate support part 11 according to the first embodiment will be further described with reference to FIGS. 3 and 4. FIG. 3 is an example of an enlarged cross-sectional view of the substrate support part 11 according to the first embodiment. FIG. 4 is a view of the substrate support part 11 as seen from above. Note that FIG. 3 is a cross-sectional view of the substrate support part 11 cut in the radial direction, with the left side of the drawing corresponding to the center side of the substrate support part 11 and the right side of the drawing corresponding to the outer periphery side of the substrate support part 11. FIG. 3 is also a cross-sectional view at position S1 (the position indicated by the black circle in FIG. 4) where a positioning structure for an under-ring 1122, which will be described later, is provided.

[0028] 3, the main body 111 of the substrate support 11 includes a base 1110 and an electrostatic chuck 1111. The electrostatic chuck 1111 is disposed on the base 1110 via an adhesive layer 1112. The adhesive layer 1112 is disposed between the base 1110 and the electrostatic chuck 1111, and bonds the upper surface of the base 1110 to the lower surface of the electrostatic chuck 1111. The seal member 116 is formed of a material that is corrosion-resistant, plasma-resistant, and heat-resistant, and protects the adhesive layer 1112 from the processing gas, plasma, etc. in the plasma processing space 10s.

[0029] 3, the substrate support unit 11 also has a height adjustment mechanism 15 that adjusts the height of an inner ring 1121, which will be described later. The height adjustment mechanism 15 has an elevation mechanism (not shown) that raises and lowers lift pins 115 disposed in through holes 1110c of the base 1110. The height adjustment mechanism 15 raises the lift pins 115 above the upper surface of a support unit 1122b, which will be described later, thereby lifting an axial member (rod, shaft) 114, which will be described later. The raised axial member 114 also rises, thereby lifting the inner ring 1121 disposed in the support unit 1122b, thereby adjusting the height of the inner ring 1121. The height adjustment mechanism 15 also lowers the lift pins 115 so that the upper end of the axial member 114 is lower than the upper surface of the support unit 1122b, thereby placing the inner ring 1121 on the support unit 1122b.

[0030] When the inner ring 1121 is worn from its upper surface due to plasma processing (e.g., etching processing), the height adjustment mechanism 15 adjusts the height of the upper surface of the inner ring 1121 in accordance with the amount of wear. This corrects the height of the sheath on the inner ring 1121, ensuring uniformity in plasma processing. This also reduces the frequency of replacing the inner ring 1121. The height adjustment mechanism 15 also adjusts the height of the inner ring 1121 to correct the height of the sheath on the inner ring 1121. This makes it possible to adjust the angle of incidence of ions on the outer periphery of the substrate W. The height adjustment mechanism 15 can also lift the inner ring 1121 from the support portion 1122b and transfer the inner ring 1121 to a transfer device (not shown), for example, by raising and lowering the lift pins 115 and the shaft member 114. This allows the worn inner ring 1121 to be transported out of the plasma processing chamber 10. Furthermore, the height adjustment mechanism 15 can receive a new inner ring 1121 carried in by a transfer device (not shown) by, for example, raising and lowering the lift pins 115 and the shaft member 114, and place the new inner ring 1121 on the support portion 1122b of the under ring 1122. In this way, the inner ring 1121 can be replaced without opening the plasma processing chamber 10 to the atmosphere.

[0031] As shown in FIGS. 3 and 4, the ring assembly 112 includes an edge ring 1120, a cover ring 1123, and an insulator ring 1124.

[0032] The edge ring 1120 has an inner ring (second ring) 1121 and an under ring (first ring) 1122. The inner ring 1121 and the under ring 1122 are formed of any one of materials such as SiC, Si, and SiO 2 .

[0033] The inner ring 1121 is a ring-shaped member that is disposed on the support portion 1122b of the under ring 1122 so as to surround the substrate W that is disposed on the central region 111a (substrate support surface) of the main body portion 111.

[0034] The under-ring 1122 is a ring-shaped member and is disposed on the annular region 111b (ring support surface) of the main body 111. The under-ring 1122 has, in order from the inside in the radial direction, an inner peripheral side portion 1122a, a support portion 1122b, an outer peripheral side portion 1122c, and a flange portion 1122d, each of which has a different height of the upper surface.

[0035] The inner circumferential side portion 1122a is a portion that is disposed below the substrate W supported on the central region 111a of the main body portion 111. The upper surface of the inner circumferential side portion 1122a is formed at a position slightly lower than or at the same height as the substrate support surface (central region 111a) of the electrostatic chuck 1111.

[0036] The support portion 1122b is provided on the outer circumferential side of the inner circumferential side portion 1122a, and the inner ring 1121 is disposed on the support portion 1122b. The upper surface of the support portion 1122b is formed at a position lower than the upper surface of the inner circumferential side portion 1122a.

[0037] The outer circumferential side portion 1122c is provided on the outer circumferential side of the support portion 1122b. The upper surface of the outer circumferential side portion 1122c is formed at a position higher than the upper surfaces of the inner circumferential side portion 1122a and the support portion 1122b. The upper surface of the outer circumferential side portion 1122c is formed at the same height as the upper surface of the cover ring 1123.

[0038] The flange portion 1122d is provided on the outer periphery side of the outer periphery side portion 1122c. The upper surface of the flange portion 1122d is formed at a position lower than the upper surface of the outer periphery side portion 1122c. The inner periphery side of the cover ring 1123 is placed on top of the flange portion 1122d. As a result, the flange portion 1122d of the under ring 1122 is held down by the cover ring 1123, preventing the under ring 1122 from moving upward.

[0039] A radial gap is provided between the outer peripheral wall (cylindrical surface) of the inner peripheral side portion 1122a of the under ring 1122 and the inner peripheral wall (cylindrical surface) of the inner ring 1121. Also, a radial gap is provided between the outer peripheral wall (cylindrical surface) of the inner ring 1121 and the inner peripheral wall (cylindrical surface) of the outer peripheral side portion 1122c of the under ring 1122. This prevents the inner ring 1121 and the under ring 1122 from rubbing against each other when the inner ring 1121 is moved up and down. Also, even if a temperature difference occurs between the inner ring 1121 and the under ring 1122, causing a difference in thermal expansion between the inner ring 1121 and the under ring 1122, the inner ring 1121 and the under ring 1122 will not come into contact with each other, preventing damage to the inner ring 1121 and / or the under ring 1122.

[0040] The cover ring 1123 is a ring-shaped member and is disposed so as to surround the edge ring 1120 (under ring 1122). The cover ring 1123 is made of an insulating material such as SiO2.

[0041] The insulator ring 1124 is a ring-shaped member and is arranged to surround the main body 111 (the base 1110 and the electrostatic chuck 1111). The insulator ring 1124 is made of an insulating material such as SiO 2 . The insulator ring 1124 supports the cover ring 1123.

[0042] <Under-ring 1122 positioning structure> Next, the structure of the through holes (1111c, 113a, 1122f) through which the lift pins 115 are inserted and the positioning structure of the under-ring 1122 relative to the electrostatic chuck 1111 will be described with reference to FIG. 3 and with reference to FIGS. 5 and 6. FIG. 5 is an example of a perspective view illustrating the positioning structure of the under-ring 1122. Specifically, FIG. 5(a) is an example of a perspective view of the under-ring 1122 as seen from the bottom side. FIG. 5(b) is an example of a perspective view of the cap 113. FIG. 5(c) is an example of a perspective view of the electrostatic chuck 1111 as seen from the top side.

[0043] 3 and 5(c), the electrostatic chuck 1111 has through-holes (first through-holes) 1111c formed therein, through which the lift pins 115 are inserted. The through-holes 1111c penetrate from the upper surface to the lower surface of the electrostatic chuck 1111. The through-holes 1111c communicate with the through-holes 1110c of the base 1110.

[0044] 3, a cap (cylindrical member) 113 having a through hole (second through hole) 113a formed therein is disposed in through hole 1111c. Cap 113 is made of any of materials such as sapphire, Al2O3, and SiC. Cap 113 is preferably made of an insulating material to prevent abnormal discharge within through hole 113a (through hole 1111c). Cap 113 is preferably made of a material that is corrosion-resistant, plasma-resistant, and heat-resistant.

[0045] As shown in FIG. 5(b), the cap 113 is a cylindrical member having a through-hole 113a formed therein, penetrating from the top surface to the bottom surface of the cap 113. A lift pin 115 is inserted through the through-hole 113a. The cap 113 also has an upper head (first head) 113b and a lower shaft (first shaft) 113c. The shaft 113c has a circular outer shape in plan view (in other words, when viewed from above, or further in other words, when viewed from a direction perpendicular to the ring support surface of the substrate support 11). The shaft 113c is a portion that is inserted into the through-hole 1111c of the electrostatic chuck 1111. The head 113b has a circular outer shape with a larger diameter than the shaft 113c in plan view. The head 113b is a portion that is placed on the ring support surface (annular region 111b) of the electrostatic chuck 1111 when the shaft 113c is inserted into the through-hole 1111c of the electrostatic chuck 1111.

[0046] 3 and 5(a), the under-ring 1122 has a counterbore portion (first groove portion, first counterbore portion) 1122e and a through-hole (third through-hole) 1122f communicating with the counterbore portion 1122e. The counterbore portion 1122e is formed on the lower surface of the under-ring 1122. When the under-ring 1122 is placed on the ring support surface (annular region 111b) of the electrostatic chuck 1111, the head 113b of the cap 113 is disposed in the counterbore portion 1122e. The through-hole 1122f communicates with the counterbore portion 1122e and penetrates the support portion 1122b of the under-ring 1122 from the lower surface to the upper surface.

[0047] 3, the shaft portion 113c of the cap 113 is inserted into the through-hole 1111c of the electrostatic chuck 1111, and the head portion 113b of the cap 113 is disposed in a counterbore portion 1122e formed in the lower surface of the under-ring 1122, thereby connecting the through-hole 113a of the cap 113 to the through-hole 1122f of the under-ring 1122. A shaft member 114 is disposed in the through-hole 113a of the cap 113 and the through-hole 1122f of the under-ring 1122. Lift pins 115 support the bottom surface of the shaft member 114. By raising the lift pins 115, the shaft member 114 comes into contact with the lower surface of the inner ring 1121. A groove 1121a is formed in the lower surface of the inner ring 1121 at a position where the groove 1121a comes into contact with the shaft member 114.

[0048] Fig. 6 is an example of a schematic diagram illustrating a positioning structure of the under-ring 1122. Specifically, Fig. 6(a) is a schematic plan view of the shape of the countersunk portion 1122e of the under-ring 1122 and the shape of the head 113b of the cap 113 placed in the countersunk portion 1122e. Fig. 6(b) is a schematic plan view of the shape of the through-hole 1111c of the electrostatic chuck 1111 and the shape of the shaft portion 113c of the cap 113 placed in the through-hole 1111c.

[0049] As shown in FIG. 6(b), the shape (outer periphery) of the shaft portion 113c of the cap 113 is circular. The shape (inner periphery) of the through hole 1111c of the electrostatic chuck 1111 is also circular. The inner diameter of the through hole 1111c is formed slightly larger than the outer diameter of the shaft portion 113c so that the shaft portion 113c can be inserted into the through hole 1111c. By inserting the shaft portion 113c of the cap 113 into the through hole 1111c of the electrostatic chuck 1111, the axis of the through hole 1111c and the axis of the cap 113 are aligned. That is, the cap 113 is positioned relative to the electrostatic chuck 1111.

[0050] 6(a), the head 113b of the cap 113 has a circular shape (outer peripheral shape). In contrast, the countersunk portion 1122e of the under-ring 1122 has an elongated hole shape (slot hole shape) with its longitudinal direction aligned with the radial direction of the electrostatic chuck 1111. Furthermore, the width of the countersunk portion 1122e in the short side direction is formed slightly larger than the outer diameter of the head 113b so that the head 113b can be placed in the countersunk portion 1122e.

[0051] As shown in FIG. 4, three positioning structures for the under-ring 1122, each including the through-hole 1111c, the cap 113, and the countersunk portion 1122e, are provided at equal intervals in the circumferential direction. In each of the three positioning structures for the under-ring 1122 provided at position S1, the outer peripheral surface of the head 113b of the cap 113 contacts the inner peripheral surface of the countersunk portion 1122e of the under-ring 1122. This positions the under-ring 1122 relative to the electrostatic chuck 1111 at three points. This allows the position of the under-ring 1122 (edge ​​ring 1120) to be adjusted relative to the main body 111 having the electrostatic chuck 1111. That is, the center of the main body 111, which is circular in plan view, and the center of the under-ring 1122, which is annular in plan view, are aligned to coincide with each other.

[0052] Furthermore, by forming the countersunk portion 1122e in the shape of an elongated hole with the radial direction of the electrostatic chuck 1111 as the longitudinal direction, it is possible to accommodate the difference in thermal expansion between the electrostatic chuck 1111 and the under-ring 1122.

[0053] <Inner ring 1121 positioning structure> Next, the positioning structure of the inner ring 1121 relative to the under ring 1122 will be described with reference to FIG. 3 and with reference to FIGS. 7 and 8. FIG. 7 is an example of a perspective view illustrating the positioning structure of the inner ring 1121. Specifically, FIG. 7(a) is an example of a view of the groove portion 1121a of the inner ring 1121 as seen from the bottom. FIG. 7(b) is an example of a perspective view of the inner ring 1121 as seen from the inner peripheral side and bottom. FIG. 7(c) is an example of a perspective view of the shaft member 114. In FIG. 7(a), the upper side of the paper indicates the center side of the inner ring 1121. In FIG. 7(b), the left side of the paper indicates the center side of the inner ring 1121.

[0054] 3, 7(a) and 7(b), a groove (second groove) 1121a is formed on the lower surface of the inner ring 1121. The groove 1121a is formed as an elongated hole whose longitudinal direction is the radial direction of the electrostatic chuck 1111. The inner peripheral side of the groove 1121a may be formed up to the inner peripheral wall of the inner ring 1121.

[0055] 3, the shaft member 114 is disposed across the through-hole 113a of the cap 113 and the through-hole 1122f of the under-ring 1122. The shaft member 114 is formed of any of materials such as sapphire, Al2O3, SiC, and SiO2. The shaft member 114 is preferably formed of an insulating material to prevent abnormal discharge. The shaft member 114 is preferably formed of a material that is corrosion-resistant, plasma-resistant, and heat-resistant.

[0056] As shown in FIG. 7(c), the shaft member (rod, shaft) 114 is a stepped shaft-shaped member and has a lower shaft portion (second shaft portion) 114a and an upper head portion (second head portion) 114b. The shaft portion 114a has a circular outer shape in a plan view. The shaft portion 114a is inserted into the through-hole 113a of the cap 113 and the through-hole 1122f of the under-ring 1122. The head portion 114b has a circular outer shape with a smaller diameter than the shaft portion 114a in a plan view. The head portion 114b is inserted into the groove portion 1121a.

[0057] Fig. 8 is an example of a schematic diagram illustrating the positioning structure of the inner ring 1121. Specifically, Fig. 8(a) is a schematic diagram illustrating, in plan view, the shape of the groove portion 1121a of the inner ring 1121 and the shape of the head portion 114b of the shaft member 114 placed in the groove portion 1121a. Fig. 8(b) is a schematic diagram illustrating, in plan view, the shape of the through-hole 1122f of the under-ring 1122 and the shape of the shaft portion 114a of the shaft member 114 placed in the through-hole 1122f.

[0058] 8(b), the shape (outer circumferential shape) of the shaft portion 114a of the shaft member 114 is circular. The shape (inner circumferential shape) of the through hole 1122f of the under-ring 1122 is an elongated hole (slotted hole) with the longitudinal direction aligned with the radial direction of the electrostatic chuck 1111. The width of the through hole 1122f in the short direction of the under-ring 1122 is formed slightly larger than the outer diameter of the shaft portion 114a so that the shaft portion 114a of the shaft member 114 can be inserted therein.

[0059] 8(a), the head 114b of the shaft member 114 has a circular shape (outer peripheral shape). In contrast, the groove 1121a of the inner ring 1121 has an elongated hole shape (slot hole shape) with its longitudinal direction aligned with the radial direction of the electrostatic chuck 1111. Furthermore, the width of the groove 1121a in the short side direction is formed slightly larger than the outer diameter of the head 114b so that the head 114b can be placed in the groove 1121a.

[0060] Here, the shaft portion 114a of the shaft member 114 is positioned relative to the through-hole 113a of the cap 113. The shaft member 114 is also positioned relative to the electrostatic chuck 1111 via the cap 113. The under-ring 1122 is also positioned relative to the electrostatic chuck 1111 via the cap 113. As a result, the shaft member 114 is positioned relative to the under-ring 1122 via the cap 113 and the electrostatic chuck 1111.

[0061] As shown in FIG. 4 , three positioning structures for the inner ring 1121, including the shaft member 114, the through-hole 1122f of the under-ring 1122, and the groove 1121a of the inner ring 1121, are provided at equal intervals in the circumferential direction. In each of the three positioning structures for the inner ring 1121 provided at position S1, the outer peripheral surface of the head 114b of the shaft member 114 contacts the inner peripheral surface of the groove 1121a of the inner ring 1121. This positions the inner ring 1121 relative to the under-ring 1122 at three points. Furthermore, the position of the inner ring 1121 can be adjusted relative to the main body 111 having the electrostatic chuck 1111 via the positioned under-ring 1122. That is, the center of the under-ring 1122, which is annular in plan view, and the center of the inner ring 1121, which is annular in plan view, are aligned. Furthermore, the center of the main body 111, which is circular in plan view, and the center of the inner ring 1121, which is annular in plan view, are aligned so as to coincide with each other.

[0062] Furthermore, by making the groove portion 1121a an elongated hole with its longitudinal direction coinciding with the radial direction of the electrostatic chuck 1111, it is possible to accommodate the difference in thermal expansion between the inner ring 1121 and the under-ring 1122. Furthermore, by making the through hole 1122f an elongated hole with its longitudinal direction coinciding with the radial direction of the electrostatic chuck 1111, it is possible to accommodate the difference in thermal expansion between the electrostatic chuck 1111 and the under-ring 1122.

[0063] As described above, the substrate support part 11 according to the first embodiment can prevent the edge ring 1120 (inner ring 1121, under ring 1122) from becoming misaligned due to thermal expansion caused by heat input during substrate processing. Furthermore, preventing the edge ring 1120 from becoming misaligned improves the stability of the substrate processing process.

[0064] Furthermore, if there is a potential difference between the inner ring 1121 and the under ring 1122 that are lifted by the lift pins 115, abnormal discharge may occur when the inner ring 1121 comes into contact with the under ring 1122. In contrast, the substrate support part 11 according to the first embodiment can suppress the occurrence of abnormal discharge by suppressing misalignment of the edge ring 1120.

[0065] Next, the substrate support part 11 according to the second embodiment will be further described with reference to FIGS.

[0066] In the substrate support part 11 according to the second embodiment, the positioning structure of the under-ring 1122 has the same structure as the positioning structure of the under-ring 1122 in the substrate support part 11 according to the first embodiment (see FIGS. 3, 5, and 6). Furthermore, the substrate support part 11 according to the second embodiment has a different positioning structure for the inner ring 1121. Therefore, the following will describe the positioning structure of the inner ring 1121 of the substrate support part 11 according to the second embodiment, and will omit descriptions that overlap with those of the substrate support part 11 according to the first embodiment.

[0067] Fig. 9 is another example of an enlarged cross-sectional view of the substrate support part 11 according to the second embodiment. Fig. 9 is a cross-sectional view of the substrate support part 11 cut in the radial direction, with the left side of the drawing corresponding to the center side of the substrate support part 11 and the right side of the drawing corresponding to the outer periphery side of the substrate support part 11. Fig. 10 is an example of a schematic cross-sectional view showing the shapes of the inner ring 1121 and the under ring 1122.

[0068] In the substrate support part 11 according to the second embodiment shown in FIG. 9, the shapes of the inner ring 1121 and the under ring 1122 are different.

[0069] 10(a), the inner ring 1121 has a tapered surface (second tapered surface) 1121b at the corner between the lower surface and the outer circumferential surface. That is, the inner ring 1121 has a tapered surface 1121b on the lower side and a cylindrical surface 1121c on the upper side of the outer circumferential surface. The angle of the tapered surface 1121b (the angle of the tapered surface 1121b as viewed from the lower surface of the inner ring 1121) is defined as a taper angle θ2.

[0070] 10(b), the outer peripheral portion 1122c of the under-ring 1122 has a tapered surface (first tapered surface) 1122g at the corner between the upper surface and the inner peripheral surface. That is, the outer peripheral portion 1122c of the under-ring 1122 has a tapered surface 1122g on the upper side of the inner peripheral side, and a cylindrical surface 1122h on the upper side. The angle of the tapered surface 1122g (the angle of the tapered surface 1122g as viewed from the upper surface of the outer peripheral portion 1122c) is defined as a taper angle θ1.

[0071] Here, the taper angle θ1 of the under ring 1122 is larger than the taper angle θ2 of the inner ring 1121 (θ1>θ2). This makes it possible to prevent jamming when the lift pins 115 are lowered and the inner ring 1121 supported by the lift pins 115 is inserted inside the outer circumferential side portion 1122c of the under ring 1122.

[0072] 10(a), the height (thickness) from the lower surface to the upper surface of the inner ring 1121 is defined as height Ha. The height of the area where the tapered surface 1121b of the inner ring 1121 is formed (the height from the lower surface of the inner ring 1121 to the upper end of the tapered surface 1121b (the corner between the tapered surface 1121b and the cylindrical surface 1121c)) is defined as height Hc. As shown in FIG. 10(b), the height of the outer circumferential side portion 1122c of the under-ring 1122 (the height from the upper surface of the support portion 1122b to the upper surface of the outer circumferential side portion 1122c) is defined as height Hb. The height of the area where the cylindrical surface 1122h of the outer circumferential side portion 1122c is formed (the height from the upper surface of the support portion 1122b to the lower end of the tapered surface 1122g (the corner between the tapered surface 1122g and the cylindrical surface 1122h)) is defined as height Hd.

[0073] Here, it is preferable that the height Ha of the inner ring 1121 is higher than the height Hb of the outer circumferential side portion 1122c of the under-ring 1122 (Ha>Hb). This allows the upper surface of the inner ring 1121 to be positioned higher than the upper surface of the under-ring 1122 (the upper surface of the outer circumferential side portion 1122c), as shown in FIG.

[0074] Furthermore, it is preferable that the height Hc of the tapered surface 1121b of the inner ring 1121 is higher than the height Hd of the cylindrical surface 1122h of the outer circumferential side portion 1122c (Hc>Hd). This makes it possible to prevent jamming when the lift pins 115 are lowered and the inner ring 1121 supported by the lift pins 115 is inserted inside the outer circumferential side portion 1122c of the under ring 1122.

[0075] Furthermore, in the substrate support part 11 according to the second embodiment shown in Fig. 9, the shaft member 114 is omitted compared to the substrate support part 11 according to the first embodiment shown in Fig. 3. This results in a configuration in which the inner ring 1121 is directly lifted by raising the lift pins 115. Note that the configuration of the substrate support part 11 shown in Fig. 9 may be provided with the shaft member 114, as in the configuration of the substrate support part 11 shown in Fig. 3. Other configurations are similar, and redundant explanations will be omitted.

[0076] 11 and 12 are cross-sectional views showing an example of a centering method.

[0077] 11(a) is an example of a cross-sectional view of the substrate support part 11 before substrate processing. Here, the lift pins 115 are lowered, and the inner ring 1121 is placed on the support part 1122b of the under ring 1122.

[0078] 11(b) is an example of a cross-sectional view of the substrate support part 11 during substrate processing, in which the lift pins 115 are raised to lift and support the inner ring 1121.

[0079] 11(c) is an example of a cross-sectional view of the substrate support part 11 after substrate processing. Here, the inner ring 1121 repeatedly undergoes thermal expansion and contraction due to heat from the plasma generated during substrate processing, causing a shift in the position of the inner ring 1121. In FIG. 11(c), the direction of the shift is indicated by an outline arrow.

[0080] 12(a) is an example of a cross-sectional view of the substrate support part 11 when aligned with the inner ring 1121. Here, the control part 2 controls the height adjustment mechanism 15 to lower the lift pins 115. In the direction in which the position of the inner ring 1121 is shifted (see the arrow in FIG. 11(c)), the tapered surface 1121b of the inner ring 1121 and the tapered surface 1122g of the under ring 1122 come into contact with each other. By further lowering the lift pins 115, the inner ring 1121 slides on the tapered surface 1122g and moves toward the center of the under ring 1122.

[0081] FIG. 12(b) is an example of a cross-sectional view of the substrate support part 11 during alignment with the inner ring 1121. Here, the control part 2 controls the height adjustment mechanism 15 to further lower the lift pins 115. As a result, the inner ring 1121 is placed on the support part 1122b of the under ring 1122. Furthermore, alignment (centering) of the inner ring 1121 with respect to the under ring 1122 is completed. Then, the control part 2 controls the height adjustment mechanism 15 to raise the lift pins 115. As a result, the lift pins 115 can support the inner ring 1121 whose center position has been aligned (see FIG. 11(b)).

[0082] Fig. 13 is an example of a cross-sectional schematic diagram showing the shapes of the outer peripheral side portions 1122c of the inner ring 1121 and the under-ring 1122. Fig. 13(a) and Fig. 13(b) are an example of a cross-sectional schematic diagram showing the shapes of the outer peripheral side portions 1122c of the inner ring 1121x and the under-ring 1122 in the substrate support part 11 according to the second embodiment. Fig. 13(c) and Fig. 13(d) are an example of a cross-sectional schematic diagram showing the shapes of the outer peripheral side portions 1122c of the inner ring 1121x and the under-ring 1122 in the substrate support part according to the reference example.

[0083] As shown in Fig. 13(c), the outer peripheral surface of the inner ring 1121x according to the reference example and the inner peripheral surface of the outer peripheral side portion 1122c of the under ring 1122 are not tapered but are cylindrical. Here, the diagonal dimension L2 of the inner ring 1121x (the distance from the upper end on one side (the right side in Fig. 13(c)) to the lower end on the other side (the left side in Fig. 13(c)) when the inner ring 1121x is cut on a plane passing through the central axis) is formed to be longer than the radial dimension W2 (the diameter of the inner peripheral surface) of the inner peripheral surface of the outer peripheral side portion 1122c (W2 <L2)。

[0084] Therefore, in the inner ring 1121x of the reference example, when the inner ring 1121x is inserted inside the outer peripheral side portion 1122c of the under ring 1122, if the inner ring 1121x is tilted as shown in Figure 13(d), there is a risk of jamming.

[0085] In contrast, as shown in FIG. 13(a), tapered surfaces 1121b and 1122g are provided on the outer peripheral surface of the inner ring 1121 and the inner peripheral surface of the outer peripheral side portion 1122c of the under ring 1122 according to the second embodiment (see FIG. 10).

[0086] Here, the radial dimension of the cylindrical surface 1122h of the outer circumferential side portion 1122c is defined as dimension W1. In other words, dimension W1 is the diameter of the cylindrical surface 1122h.

[0087] The diagonal dimension of the inner ring 1121 is defined as diagonal dimension L1. In other words, when the inner ring 1121 is cut along a plane passing through the central axis, diagonal dimension L1 is the distance from the upper end of the side surface (the upper end of the cylindrical surface 1121c) on one radial side (the right side in FIG. 13(a)) to the lower end of the side surface (the lower end of the tapered surface 1121b) on the other radial side (the left side in FIG. 13(b)).

[0088] The inner ring 1121 is formed so that the diagonal dimension L1 is shorter than the radial dimension W1 of the cylindrical surface 1122h of the outer circumferential side portion 1122c (L1 <W1)。

[0089] Therefore, with the inner ring 1121 according to the second embodiment, when the inner ring 1121 is inserted inside the outer peripheral side portion 1122c of the under ring 1122, even if the inner ring 1121 is tilted as shown in FIG. 13(b), it is possible to prevent jamming. That is, the inner ring 1121 can be suitably placed on the support portion 1122b of the under ring 1122. In other words, the inner ring 1121 can be centered relative to the under ring 1122.

[0090] Also, maximum dimension Y1 is the maximum radial dimension of the tapered surface 1122g formed on the outer circumferential side portion 1122c of the under-ring 1122. In other words, maximum dimension Y1 is the radial dimension (diameter) at the upper end of the tapered surface 1122g.

[0091] Also, the diagonal dimension of the cylindrical surface 1121c of the inner ring 1121 is defined as diagonal dimension X1. In other words, when the inner ring 1121 is cut along a plane passing through the central axis, diagonal dimension X1 is the distance from the upper end of the cylindrical surface 1121c on one radial side (the right side in FIG. 13(a)) to the lower end of the cylindrical surface 1121c on the other radial side (the left side in FIG. 13(a)).

[0092] The tapered surface 1122g is formed so that the diagonal dimension X1 of the cylindrical surface 1121c of the inner ring 1121 is shorter than the maximum dimension Y1 in the radial direction of the tapered surface 1122g (X1 <Y1)。

[0093] As described above, the substrate support part 11 according to the second embodiment can achieve proper alignment even if the inner ring 1121 is misaligned due to thermal expansion caused by heat input during substrate processing. Furthermore, eliminating the misalignment of the inner ring 1121 improves the stability of the substrate processing process.

[0094] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) an electrostatic chuck having a substrate support surface and a ring support surface, the ring support surface having a first through hole through which a lift pin is inserted; a cylindrical member that is inserted into the first through hole of the electrostatic chuck and has a second through hole formed therein; a first ring having a third through hole formed therein and communicating with the second through hole of the cylindrical member, the first ring being supported by the ring support surface; a second ring disposed on the first ring; a rod inserted through the second through hole and the third through hole, The cylindrical member is a first shaft portion that is inserted into the first through hole of the electrostatic chuck; a first head portion that is disposed on the ring support surface of the electrostatic chuck when the first shaft portion is inserted into the first through-hole of the electrostatic chuck, The first ring is a first groove portion provided on a lower surface of the first ring, communicating with the third through hole, and in which the first head portion is disposed; The rod is a second shaft portion inserted into the second through hole and the third through hole; a second head portion provided above the second shaft portion and having a smaller diameter than the second shaft portion; The second ring is a second groove portion provided on the lower surface of the second ring and in which the second head portion is disposed; Substrate processing equipment. (Appendix 2) The second groove portion is an elongated hole whose longitudinal direction is the radial direction of the electrostatic chuck. 2. The substrate processing apparatus according to claim 1. (Appendix 3) The first groove portion is an elongated hole whose longitudinal direction is the radial direction of the electrostatic chuck. 10. The substrate processing apparatus according to claim 1 or 2. (Appendix 4) the third through hole is an elongated hole whose longitudinal direction is the radial direction of the electrostatic chuck; 4. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a substrate processing apparatus. (Appendix 5) The first head portion has a larger diameter than the first shaft portion. 5. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a substrate processing apparatus. (Appendix 6) the first through hole of the electrostatic chuck, the cylindrical member inserted into the first through hole, and the first groove portion of the first ring are each provided in a circumferential direction in threes. 6. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a substrate processing apparatus. (Appendix 7) The first ring is a support portion on which the second ring is placed; an annular outer peripheral side portion provided on the outer peripheral side of the support portion, the second ring has a second tapered surface between its lower surface and its outer circumferential surface; The outer peripheral side portion of the first ring has a first tapered surface at a corner between an upper surface and an inner peripheral surface. 7. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is a substrate processing apparatus. (Appendix 8) an electrostatic chuck having a substrate support surface and a ring support surface, the ring support surface having a first through hole through which a lift pin is inserted; a cylindrical member that is inserted into the first through hole of the electrostatic chuck and has a second through hole formed therein; a first ring having a third through hole formed therein and communicating with the second through hole of the cylindrical member, the first ring being supported by the ring support surface; a second ring disposed on the first ring; The cylindrical member is a first shaft portion that is inserted into the first through hole of the electrostatic chuck; a first head portion that is disposed on the ring support surface of the electrostatic chuck when the first shaft portion is inserted into the first through-hole of the electrostatic chuck, The first ring is a first groove portion provided on a lower surface of the first ring, communicating with the third through hole, and in which the first head portion is disposed; The first ring is a support portion on which the second ring is placed; an annular outer peripheral side portion provided on the outer peripheral side of the support portion, the second ring has a second tapered surface at a corner between the lower surface and the outer circumferential surface, The outer peripheral side portion of the first ring has a first tapered surface at a corner between an upper surface and an inner peripheral surface. Substrate processing equipment. (Appendix 9) The taper angle of the first tapered surface is larger than the taper angle of the second tapered surface. 9. The substrate processing apparatus according to claim 7 or 8. (Appendix 10) The height of the second ring is greater than the height of the outer peripheral side portion of the first ring. 10. The substrate processing apparatus according to any one of claims 7 to 9. (Appendix 11) The height from the lower surface of the second ring to the upper end of the second tapered surface is greater than the height from the upper surface of the support portion of the first ring to the lower end of the first tapered surface. 11. The substrate processing apparatus according to claim 7, wherein the substrate processing apparatus is a substrate processing apparatus. (Appendix 12) The diagonal dimension of the second ring is shorter than the radial dimension of the cylindrical surface of the first ring. 12. The substrate processing apparatus according to claim 7, wherein the substrate processing apparatus is a substrate processing apparatus. (Appendix 13) A diagonal dimension of the cylindrical surface of the second ring is shorter than a maximum dimension in a radial direction of the first tapered surface. 13. The substrate processing apparatus of claim 12.

[0095] The above describes embodiments of the plasma processing system, but the present disclosure is not limited to the above embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims. [Explanation of symbols]

[0096] W substrate 1. Plasma processing equipment 2. Control Unit 11 Substrate support 15 Height adjustment mechanism 111 Main body 111a Central area 111b Annular region 112 Ring Assembly 113 Cap (cylindrical member) 113a Through hole (2nd through hole) 113b Head (first head) 113c Shaft part (1st shaft part) 114 Shaft components (rods, shafts) 114a Shaft part (2nd shaft part) 114b Head (second head) 115 Lift Pin 1110 Foundation 1111 Electrostatic chuck 1111c Through hole (1st through hole) 1120 Edge Ring 1121 Inner Ring (Second Ring) 1121a Groove (second groove) 1121b Tapered surface (second tapered surface) 1121c Cylindrical surface 1122 Under Ring (1st Ring) 1122a Inner circumference side 1122b Support part 1122c Outer periphery 1122d flange 1122e Counterbore (First groove, first counterbore) 1122f Through hole (3rd through hole) 1122g Tapered surface (first tapered surface) 1122h Cylindrical surface 1123 Covering 1124 Insulator ring

Claims

1. an electrostatic chuck having a substrate support surface and a ring support surface, the ring support surface having a first through hole formed therein through which a lift pin is inserted; a cylindrical member that is inserted into the first through hole of the electrostatic chuck and has a second through hole formed therein; a first ring having a third through hole formed therein and communicating with the second through hole of the cylindrical member, the first ring being supported by the ring support surface; a second ring disposed on the first ring; a rod inserted through the second through hole and the third through hole, The cylindrical member is a first shaft portion that is inserted into the first through hole of the electrostatic chuck; a first head portion that is disposed on the ring support surface of the electrostatic chuck when the first shaft portion is inserted into the first through hole of the electrostatic chuck, The first ring is a first groove portion provided on a lower surface of the first ring, communicating with the third through hole, and in which the first head portion is disposed; The rod is a second shaft portion inserted into the second through hole and the third through hole; a second head portion provided above the second shaft portion and having a smaller diameter than the second shaft portion, The second ring is a second groove portion provided on a lower surface of the second ring and in which the second head portion is disposed; Substrate processing equipment.

2. The second groove portion is an elongated hole whose longitudinal direction is the radial direction of the electrostatic chuck. The substrate processing apparatus according to claim 1 .

3. The first groove portion is an elongated hole whose longitudinal direction is the radial direction of the electrostatic chuck. The substrate processing apparatus according to claim 1 .

4. the third through hole is an elongated hole whose longitudinal direction is the radial direction of the electrostatic chuck; The substrate processing apparatus according to claim 1 .

5. The first head portion has a larger diameter than the first shaft portion. The substrate processing apparatus according to claim 1 .

6. the first through hole of the electrostatic chuck, the cylindrical member inserted into the first through hole, and the first groove portion of the first ring are each provided in a circumferential direction in threes. The substrate processing apparatus according to claim 1 .

7. The first ring is a support portion on which the second ring is placed; an annular outer peripheral side portion provided on the outer peripheral side of the support portion, the second ring has a second tapered surface between its lower surface and its outer circumferential surface; The outer peripheral side portion of the first ring has a first tapered surface at a corner between an upper surface and an inner peripheral surface. The substrate processing apparatus according to claim 1 .

8. an electrostatic chuck having a substrate support surface and a ring support surface, the ring support surface having a first through hole formed therein through which a lift pin is inserted; a cylindrical member that is inserted into the first through hole of the electrostatic chuck and has a second through hole formed therein; a first ring having a third through hole formed therein and communicating with the second through hole of the cylindrical member, the first ring being supported by the ring support surface; a second ring disposed on the first ring, The cylindrical member is a first shaft portion that is inserted into the first through hole of the electrostatic chuck; a first head portion that is disposed on the ring support surface of the electrostatic chuck when the first shaft portion is inserted into the first through hole of the electrostatic chuck, The first ring is a first groove portion provided on a lower surface of the first ring, communicating with the third through hole, and in which the first head portion is disposed; The first ring is a support portion on which the second ring is placed; an annular outer peripheral side portion provided on the outer peripheral side of the support portion, the second ring has a second tapered surface at a corner between the lower surface and the outer circumferential surface, The outer peripheral side portion of the first ring has a first tapered surface at a corner between an upper surface and an inner peripheral surface. Substrate processing equipment.

9. a taper angle of the first tapered surface is larger than a taper angle of the second tapered surface; 9. The substrate processing apparatus according to claim 7 or 8.

10. The height of the second ring is greater than the height of the outer peripheral side portion of the first ring.

9. The substrate processing apparatus according to claim 7 or 8.

11. a height from a lower surface of the second ring to an upper end of the second tapered surface is greater than a height from an upper surface of the support portion of the first ring to a lower end of the first tapered surface; 9. The substrate processing apparatus according to claim 7 or 8.

12. A diagonal dimension of the second ring is shorter than a radial dimension of the cylindrical surface of the first ring.

9. The substrate processing apparatus according to claim 7 or 8.

13. a diagonal dimension of the cylindrical surface of the second ring is shorter than a maximum dimension in a radial direction of the first tapered surface; The substrate processing apparatus according to claim 12 .

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