Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method that allows a plurality of layers to be easily deposited.SOLUTION: A substrate processing method comprises :a first layer forming step of applying first coating liquid including organic material and a first photo-crosslinking agent onto a substrate thereby forming a first layer 101; a second layer forming step of applying second coating liquid including silicon material and a second photo-crosslinking agent onto the first layer 101 thereby forming a second layer 102; and a light irradiation step of irradiating laminate consisting of the first layer 101 and the second layer 102 with light to harden the first layer 101 through a crosslinking reaction thereby forming an organic layer and hardening the second layer 102 through a crosslinking reaction thereby forming a silicon layer.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus for forming a photoresist layer on a substrate. [Background technology]

[0002] In recent years, when etching a film to be processed on a silicon substrate, a multilayer film has been used as a mask layer to improve etching resistance. For example, Patent Document 1 describes a substrate processing method in which an underlayer film (organic layer) containing carbon or the like as a main component is irradiated with ultraviolet light when the underlayer film is formed on the film to be processed on the substrate. In this way, the adhesion between the underlayer film and the resist film formed on the underlayer film is improved, and the pattern width that can be generated in the resist film can be made smaller.

[0003] Patent Document 2 describes a substrate processing method for forming a bottom resist film (organic layer) mainly composed of carbon on a process layer on the surface of a substrate. The bottom resist film can be formed by applying a solution made by dissolving a novolac resin or the like in a solvent using a method such as spin coating, and baking on a hot plate or in an oven. A coating material made by dissolving a silicon compound in a specific organic solvent is applied to the surface of the bottom resist film to form an intermediate film (silicon layer). To form the intermediate film, the coating material on the substrate surface is heated to vaporize the organic solvent. The resist film is formed on the surface of the intermediate film.

[0004] In Patent Document 3, a polymerizable compound having an ethylenically unsaturated bond that is cured by a photocrosslinking agent is used as the underlayer film. That is, the substrate processing method of Patent Document 3 includes the steps of applying an underlayer film-forming composition onto a semiconductor substrate to form a coating film, and irradiating the coating film with light to form an underlayer film. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2021-86993 [Patent Document 2] Japanese Patent Application Laid-Open No. 2002-198295 [Patent Document 3] Patent No. 4993119 Summary of the Invention [Problem to be solved by the invention]

[0006] However, conventional substrate processing methods, which deposit a spin-on-carbon (SOC) layer (an organic layer formed by spin coating) and a spin-on-glass (SOG) layer (a silicon layer formed by spin coating) beneath a photoresist layer, do not necessarily provide an optimized deposition method. Depositing the SOC layer, SOG layer, and photoresist layer on the substrate surface in this order requires multiple steps. In other words, conventional configurations deposit each layer by repeating the process of depositing an SOC layer on the substrate surface followed by an SOG layer. Because each layer deposition involves a baking process and an ultraviolet light irradiation process, the more layers are deposited on the substrate surface, the more steps are required for substrate processing. This type of substrate processing method is not optimal from the perspectives of power saving and equipment miniaturization.

[0007] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can easily form a plurality of layers. [Means for solving the problem]

[0008] In order to solve the above problems, the present invention has the following configuration. That is, the present invention provides a substrate processing method for forming a laminated structure composed of an organic layer, a silicon layer, and a photoresist layer on a substrate, the method comprising: a first layer forming step of applying a first coating liquid containing an organic material and a first photocrosslinking agent onto a substrate to form a first layer; a second layer forming step of applying a second coating liquid containing a silicon material and a second photocrosslinking agent onto the first layer to form a second layer; a light irradiation step of irradiating a laminate including the first layer and the second layer with light to cure the first layer through a crosslinking reaction to form the organic layer and cure the second layer through a crosslinking reaction to form the silicon layer; a photoresist layer forming step of forming a photoresist layer on the cured laminate; The present invention is characterized by the following features.

[0009] [Actions and Effects] The substrate processing method described above includes a first layer forming step of applying a first coating liquid containing an organic material and a first photocrosslinking agent onto a substrate to form a first layer; a second layer forming step of applying a second coating liquid containing a silicon material and a second photocrosslinking agent onto the first layer to form a second layer; and a light irradiation step of irradiating a laminate consisting of the first and second layers with light to cure the first layer through a crosslinking reaction to form an organic layer and the second layer through a crosslinking reaction to form a silicon layer. In other words, the substrate processing method of the present invention forms a second layer on the first layer before it has cured through the crosslinking reaction, and then irradiates it with light to simultaneously cure the first and second layers to form an organic layer and a silicon layer, respectively. According to the present invention, the first and second layers are cured simultaneously, simplifying the formation of multiple layers compared to a method in which an organic layer is formed and then the second layer is formed. The present invention provides an optimal substrate processing method from the perspectives of power saving and device miniaturization.

[0010] In the above-mentioned substrate processing method, The first layer in the first layer forming step preferably has a lower layer that becomes the organic layer in the light irradiation step, and an upper layer that is dissolved and eliminated by the second coating liquid.

[0011] [Operation and Effect] According to the above-mentioned configuration, the first layer in the first layer forming step has a lower layer that becomes an organic layer in the light irradiation step and an upper layer that dissolves and disappears in the second coating liquid. With this configuration, the configuration of the present invention can be realized simply by forming the first layer to a relatively large thickness.

[0012] In the above-mentioned substrate processing method, It is preferable that the solvent of the second coating liquid in the second layer forming step dissolves the organic material less easily than the solvent of the first coating liquid in the first layer forming step.

[0013] [Actions and Effects] According to the above-described configuration, the solvent of the second coating liquid in the second layer forming process is less likely to dissolve organic materials than the solvent of the first coating liquid in the first layer forming process. This configuration makes it less likely for the second coating liquid to dissolve the first layer when applied to the first layer. Therefore, a laminated structure of the first and second layers can be formed without estimating the layer thickness that will be dissolved in the second coating liquid and forming the first layer thicker.

[0014] In the above-mentioned substrate processing method, The second coating liquid in the second layer forming step preferably contains an additive that promotes dissolution of the silicon material in a solvent.

[0015] [Operation and Effect] According to the above-mentioned configuration, the second coating liquid in the second layer forming step contains an additive that promotes dissolution of the silicon material in the solvent. This configuration makes it easy to form a laminated structure of the first and second layers.

[0016] In the above-mentioned substrate processing method, The light irradiated in the light irradiation step is preferably ultraviolet light having a wavelength between 172 nm and 385 nm.

[0017] [Actions and Effects] According to the above-mentioned configuration, the wavelength of the light irradiated in the light irradiation process is between 172 nm and 385 nm. If the light irradiated in the light irradiation process is ultraviolet light, the first layer and the second layer can be reliably converted into an organic layer and a silicon layer.

[0018] In the above-mentioned substrate processing method, It is preferable that the silicon layer allows the irradiated light to reach the first layer in the light irradiation step.

[0019] [Operation and Effect] According to the above-mentioned configuration, the silicon layer allows the irradiated light to reach the first layer in the light irradiation step. This configuration prevents the irradiated light from being absorbed by the silicon layer and not reaching the first layer in the light irradiation step, and ensures that the first layer is an organic layer.

[0020] In the above-mentioned substrate processing method, a first baking step of removing a solvent contained in the first layer after the first layer generating step and before the second layer generating step; a second baking step of removing a solvent contained in the second layer after the second layer generating step and before the light irradiation step; It is preferable to have the following.

[0021] [Actions and Effects] According to the above-mentioned configuration, a first baking step is performed after the first layer generation step and before the second layer generation step to remove the solvent contained in the first layer. With this configuration, the first layer can be reliably dried, facilitating the generation of the organic layer. Furthermore, according to the above-mentioned configuration, a second baking step is performed after the second layer generation step and before the light irradiation step to remove the solvent contained in the second layer. With this configuration, the second layer can be reliably dried, facilitating the generation of the silicon layer.

[0022] In the above-mentioned substrate processing method, The first baking step bakes the substrate at a temperature between 100°C and 150°C, In the second baking step, the substrate is preferably baked at a temperature between 100°C and 150°C.

[0023] [Actions and Effects] According to the above-mentioned configuration, the first baking step bakes the substrate at a temperature between 100°C and 150°C. If the first baking step is a low-temperature baking, a substrate processing method that saves power can be provided. Also, according to the above-mentioned configuration, the second baking step bakes the substrate at a temperature between 100°C and 150°C. If the second baking step is a low-temperature baking, a substrate processing method that saves power can be provided.

[0024] This specification also discloses the following invention relating to a substrate processing apparatus. That is, the present specification provides a substrate processing apparatus for forming a laminated structure composed of an organic layer, a silicon layer, and a photoresist layer on a substrate, a first chamber for supplying a first liquid containing at least an organic material and a first photocrosslinking agent onto a substrate to form a first layer; a second chamber for supplying a second liquid containing at least a silicon material and a second photocrosslinking agent onto the first layer to form a second layer; a light irradiation chamber that irradiates a laminate including the first layer and the second layer with light to harden the first layer through a crosslinking reaction to form an organic layer and harden the second layer through a crosslinking reaction to form a silicon layer; a third chamber for depositing a photoresist layer on the silicon layer. The present invention discloses a substrate processing apparatus characterized by the above.

[0025] [Operations and Effects] The above-described substrate processing apparatus includes a first chamber that supplies a first liquid containing at least an organic material and a first photocrosslinking agent onto a substrate to form a first layer; a second chamber that supplies a second liquid containing at least a silicon material and a second photocrosslinking agent onto the first layer to form a second layer; a light irradiation chamber that irradiates light onto a laminate consisting of the first and second layers to harden the first layer through a crosslinking reaction to form an organic layer and the second layer through a crosslinking reaction to form a silicon layer; and a third chamber that forms a photoresist layer on the silicon layer. According to the present invention, the first and second layers are hardened together, simplifying the formation of multiple layers compared to a method in which the organic layer is formed first and then the second layer is formed. The present invention provides an optimal substrate processing apparatus from the perspectives of power saving and device miniaturization. [Effects of the Invention]

[0026] According to the present invention, it is possible to provide a substrate processing method and a substrate processing apparatus that can easily form a plurality of layers. [Brief explanation of the drawings]

[0027] [Figure 1] 1 is a plan view illustrating an overall configuration of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view illustrating the configuration of a light irradiation chamber according to an embodiment. [Figure 3] FIG. 2 is a cross-sectional view illustrating the configuration of a light irradiation chamber according to the embodiment. [Figure 4] 1 is a flowchart illustrating a process for forming a lower layer according to an embodiment. [Figure 5] 10A to 10C are cross-sectional views illustrating a film formation process of a lower layer according to an embodiment. [Figure 6] 10A to 10C are cross-sectional views illustrating a film formation process of a lower layer according to an embodiment. [Figure 7] 10A to 10C are cross-sectional views illustrating a film formation process of a lower layer according to an embodiment. [Figure 8] 10A to 10C are cross-sectional views illustrating a film formation process of a lower layer according to an embodiment. [Figure 9]5A to 5C are cross-sectional views illustrating a process of forming a photoresist layer according to an embodiment. [Figure 10] 10 is a graph showing an appropriate amount of ultraviolet light irradiation according to an example. [Figure 11] 1 is a flowchart illustrating substrate processing according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0028] An embodiment of the present invention will be described below with reference to the drawings. The photolithography apparatus of the embodiment includes a stepper that performs exposure processing when creating a device on the surface of a substrate having a front and back surface, and a substrate processing apparatus that performs substrate processing required before and after the exposure processing. The substrate processing apparatus of the present invention relates to a substrate processing method that creates a layered structure composed of an organic layer, a silicon layer, and a photoresist layer on a substrate. [Example]

[0029] 1. Overall structure FIG. 1 is a plan view showing the overall configuration of the photolithography apparatus of this example. The photolithography apparatus of this example has a structure in which a substrate processing apparatus 1 and a stepper 2 are connected. The substrate processing apparatus 1 further has an indexer block 3, a coater block 5, a developer block 7, and an interface block 9. The indexer block 3, the coater block 5, the developer block 7, and the interface block 9 are arranged in this order to form the substrate processing apparatus 1. The substrate processing apparatus 1 has a housing 1A that houses each block. The housing 1A has a substantially rectangular shape in a plan view. A load port 11 is provided to protrude from the wall surface at one end of the housing 1A.

[0030] For convenience, in this specification, the direction in which the indexer block 3, coater block 5, developer block 7, and interface block 9 in the substrate processing apparatus 1 are arranged is referred to as the front-to-rear direction (X direction). The X direction extends horizontally. The direction from the coater block 5 to the indexer block 3 in the substrate processing apparatus 1 is referred to as the front. The direction opposite to the front is referred to as the rear. The horizontal direction perpendicular to the X direction is referred to as the left-to-right direction (Y direction). The Y direction is also the direction in which multiple load ports 11 are arranged. For convenience, one side of the Y direction is referred to as the right, and the opposite side of the right is referred to as the left. The height direction (Z direction) is perpendicular to both the X direction and the Y direction and coincides with the vertical direction. In each figure, front, back, right, left, top, and bottom are indicated as appropriate for reference.

[0031] 2. Indexer Block 1, the indexer block 3 includes a load port 11, which is an entrance through which a carrier C, which stores multiple substrates W in a horizontal position at predetermined intervals in the Z direction, is introduced into the block. The carrier C can be placed on the load port 11.

[0032] A plurality of substrates W (for example, 25 substrates) are stored in a stack in one carrier C. The carrier C storing unprocessed substrates W to be carried into the substrate processing apparatus 1 is first placed on the load port 11.

[0033] An indexer robot IR capable of transporting horizontally oriented substrates W one by one is disposed in the indexer block 3. The indexer robot IR can access any of the four load ports 11 and the path 34 provided at the boundary between the indexer block 3 and the coater block 5 shown in Fig. 1, and transfers substrates W between the path 34 and carriers C installed on the load ports 11. The transfer of substrates W by the indexer robot IR is achieved by a hand 36.

[0034] 3. Coater block The coater block 5 is configured to mainly deposit a photoresist layer on the substrate W before exposure processing. The coater block 5 has a second column CL2 located at the rear of the pass 34, a first column CL1 provided to the left of the second column CL2, and a third column CL3 provided to the right of the second column CL2. Therefore, the second column CL2 is located between the first column CL1 and the third column CL3 on the left and right.

[0035] In the first row CL1, chemical processing chambers each having a spin chuck 8 for rotatably supporting a substrate W and a nozzle 10 for discharging a chemical are arranged in the X direction. Therefore, the chemical processing chambers are configured to apply a chemical to the surface of the substrate W. The chemical processing chambers include lower layer deposition chambers 51 for depositing an SOC (spin-on-carbon) layer (organic layer) and an SOG (spin-on-glass) layer (silicon layer), and resist chambers 53 for depositing a photoresist layer. The SOC layer corresponds to the organic layer in the present invention, and the SOG layer corresponds to the silicon layer in the present invention. In the first row CL1 of FIG. 1, two resist chambers 53 or two lower layer deposition chambers 51 are arranged in a front-to-back configuration. In the first row CL1, the lower layer deposition chambers 51 and the resist chambers 53 are stacked. The lower layer deposition chambers 51 and the resist chambers 53 can be reversed in their up-down position as appropriate. The first row CL1 can also have three or more layers of chemical processing chambers.

[0036] The lower layer deposition chamber 51 corresponds to the first and second chambers of the present invention. A chemical solution for film formation can be spin-coated onto the substrate W through the nozzle 10, and spin drying can also be performed to dry the applied chemical solution. The lower layer deposition chamber 51 can selectively spin-coat the substrate W with a chemical solution consisting of a polymeric aromatic compound dissolved in PGMEA (propylene glycol monomethylether acetate) or a silicon compound dissolved in PGMEA. The polymeric aromatic compound corresponds to the organic material of the present invention, and the silicon compound corresponds to the silicon material of the present invention. The solvent constituting the chemical solution is not limited to PGMEA and may be, for example, PGME (propylene glycol monomethylether). The chemical solution containing the polymeric aromatic compound is called the first coating solution. The first coating solution is a chemical solution for forming an SOG film. On the other hand, the chemical solution containing the silicon compound is called the second coating solution. The second coating solution is a chemical solution for forming an SOG film. In addition, the first coating liquid and the second coating liquid contain a photocrosslinking agent that crosslinks and hardens polymer compounds. When irradiated with ultraviolet light, the photocrosslinking agent polymerizes different polymers to crosslink them, forming a polymer network structure. An example of the photocrosslinking agent is a photoradical polymerization initiator. The photocrosslinking agent added to the first coating liquid is the first photocrosslinking agent, and the photocrosslinking agent added to the second coating liquid is the second photocrosslinking agent. In addition, the lower layer film formation chamber 51 can also perform spin cleaning of the substrate W using a rinse liquid. The rinse liquid is, for example, pure water.

[0037] The resist chamber 53 can perform not only the deposition of a photoresist layer but also edge exposure related to the removal of the photoresist layer from the peripheral portion of the substrate W. Edge exposure does not necessarily have to be performed in the resist chamber 53, but may be achieved by an edge exposure unit provided separately from the resist chamber 53. The edge exposure unit is provided in the third column CL3 described below or the sixth column CL6 in the developer block 7 described below.

[0038] The second row CL2 is a passageway along which the first central robot CR1, which transports horizontally oriented substrates W, moves back and forth. In addition to the path 34 described above, the first central robot CR1 can access the lower layer deposition chamber 51 and resist chamber 53 in the first row CL1, the heat treatment chamber 55 and cooling unit 58 (described later) provided in the third row CL3, and the path 54 provided at the boundary between the coater block 5 and the developer block 7 shown in FIG. 1.

[0039] The first center robot CR1 is capable of moving back and forth in the X direction and moving up and down in the Z direction so as to transport the substrate W to each accessible position. The first center robot CR1 can orient the hand 56 that holds the substrate W in any direction, front, back, left or right.

[0040] In the third row CL3, heat treatment chambers 55 for heating substrates W, cooling units 58 for cooling substrates W, and light irradiation chambers 61 for irradiating substrates W with ultraviolet light are arranged in the X direction. The ultraviolet light corresponds to the light of the present invention. The heat treatment chambers 55 are configured with circular hot plates 55a for heating substrates W and circular post-heating treatment plates 55b for performing post-heating treatment to lower the temperature of high-temperature substrates W, arranged in the Y direction. Meanwhile, the cooling unit 58 is provided with circular cooling treatment plates 58a for cooling substrates W at room temperature. In the third row CL3, the heat treatment chambers 55, cooling units 58, and light irradiation chambers 61 are not only arranged in the X direction, but are also stacked in the Z direction to form a chamber stack. The number of layers in the stack can be changed as needed.

[0041] 4. Light Irradiation Chamber 2 illustrates the configuration of the light irradiation chamber 61 of this example. The light irradiation chamber 61 has a base plate 61a that supports the substrate W, a cover member 12 having an opening 26 that is closed by the base plate 61a, and a ring-shaped seal member 20 that is interposed between the base plate 61a and the cover member 12. The seal member 20 is fixed to the base plate 61a.

[0042] The bottom plate lifting mechanism 23 raises and lowers the base plate 61a relative to the cover member 12. The base plate 61a can be placed in two states by the bottom plate lifting mechanism 23: the state shown in FIG. 2 in which the seal member 20 is in close contact with the opening 26 of the cover member 12; and the state shown in FIG. 3 in which the seal member 20 is separated from the opening 26 of the cover member 12.

[0043] The cover member 12 and the base plate 61a are robust enough to create a vacuum in the internal space surrounded by the cover member 12, the base plate 61a, and the seal member 20. The internal space is evacuated by an exhaust unit 24 consisting of a vacuum pump. The exhaust piping 18 is a pipe that connects the exhaust unit 24 to the internal space of the cover member 12. Meanwhile, air is supplied to the evacuated internal space by an air supply unit 25. The air supply piping 19 is a pipe that connects the air supply unit 25 to the internal space of the cover member 12. Figure 2 shows the light irradiation chamber 61 in which the internal space of the cover member 12 is evacuated.

[0044] 3 shows the light irradiation chamber 61 in a state in which a substrate W in a horizontal position can be moved in and out by moving the base plate 61a away from the cover member 12. As shown in FIG. 3, the base plate 61a is provided with through holes 16 extending in the vertical direction. Each through hole 16 is provided with a lift pin 13 that can be freely extended and retracted from the base plate 61a. The number of lift pins 13 is, for example, three. The lift pins 13 extend and retract from the base plate 61a with their tips at the same height. The substrate W transported to the light irradiation chamber 61 by the first central robot CR1 is held by the tips of the lift pins 13, which are in an extended state.

[0045] The upper surface of the base plate 61a is provided with fixing pins 17 capable of holding the substrate W. The number of fixing pins 17 is, for example, four, but for convenience of drawing, two are shown in Figures 2 and 3. The fixing pins 17 are configured to hold the substrate W when the lift pins 13 are in a contracted state as shown in Figure 2. In this way, in the light irradiation chamber 61 of this example, when the base plate 61a is in a downward position and the internal space of the cover member 12 is connected to the outside air, the substrate W is supported by the lift pins 13 in an extended state. On the other hand, in the light irradiation chamber 61 of this example, when the base plate 61a is in an upward position and the internal space of the cover member 12 is isolated from the outside air, the substrate W is supported by the fixing pins 17, not the lift pins 13 in a contracted state.

[0046] A light source 15 capable of emitting ultraviolet light is attached to the ceiling of the cover member 12 that forms the upper end of the internal space. The light source 15 may be, for example, UVLEDs (Ultraviolet Light Emitting Diodes) arranged vertically and horizontally, or a xenon lamp or a mercury lamp. When the light source 15 is a UVLED, the wavelength of the ultraviolet light emitted from the light source 15 is 385 nm. When the light source 15 is a xenon lamp or a mercury lamp, the wavelength of the ultraviolet light emitted from the light source 15 is 172 nm or 365 nm, respectively. Thus, the wavelength of the ultraviolet light emitted from the light source 15 is suitably 172 nm to 385 nm, that is, 400 nm or less. Furthermore, the ultraviolet light irradiation amount at this time is 200 mJ / cm. 2 The above is preferable. This point will be discussed later.

[0047] The light source control unit 21 is configured to control the irradiation of ultraviolet light by controlling whether or not to supply power to the light source 15. The light source control unit 21 causes the light source 15 to irradiate ultraviolet light when the internal space of the cover member 12 is maintained at a vacuum.

[0048] The sealing member 14 is provided on the underside of the base plate 61a in a position that blocks the through hole 16, allowing the lift pins 13 to move freely while ensuring that the internal space is airtight so that outside air does not enter the internal space of the cover member 12 through the through hole 16.

[0049] The operation of the light irradiation chamber 61 will be described. In the initial state of the light irradiation chamber 61, the base plate 61a is positioned downward and the lift pins 13 are extended, as shown in Fig. 3. The first central robot CR1 can insert the hand 56 into the gap between the cover member 12 and the base plate 61a to load an unprocessed substrate W onto the tips of the lift pins 13, or can retrieve a processed substrate W placed on the tips of the lift pins 13 and load it out of the light irradiation chamber 61.

[0050] When the substrate W is to be irradiated with ultraviolet light, first, the base plate 61a is raised to bring the seal member 20 into close contact with the lower surface of the cover member 12. Then, as shown in FIG. 2, the lift pins 13 are contracted to transfer the substrate W to the fixing pins 17.

[0051] Thereafter, the exhaust unit 24 is operated to evacuate the internal space of the cover member 12. The light source control unit 21 then causes the substrate W to be irradiated with ultraviolet light.

[0052] When the ultraviolet light irradiation process is completed, the air supply unit 25 is activated to equalize the pressure in the internal space of the cover member 12 with the outside air. Thereafter, the base plate 61a moves downward, the lift pins 13 are extended as shown in Fig. 3, and the substrate W supported by the fixing pins 17 is picked up by the lift pins 13. The first central robot CR1 can then transport the substrate W picked up by the lift pins 13 out of the light irradiation chamber 61.

[0053] 5. Developer Block The developer block 7 is configured to mainly develop substrates W after exposure processing. The developer block 7 has a fifth column CL5 located at the rear of the path 54, a fourth column CL4 provided to the left of the fifth column CL5, and a sixth column CL6 provided to the right of the fifth column CL5. Therefore, the fifth column CL5 is located between the fourth column CL4 and the sixth column CL6 on the left and right.

[0054] In the fourth row CL4, developing chambers 71 each having a spin chuck 8 for rotatably supporting a substrate W and a nozzle 10 for discharging a chemical solution are arranged in the X direction. In the fourth row CL4 of FIG. 1, two developing chambers 71 are arranged in front of and behind each other. In the fourth row CL4, the developing chambers 71 are stacked. The number of layers in the stack made up of the developing chambers 71 can be changed as appropriate.

[0055] The fifth row CL5 is a passage along which the second center robot CR2, which transports horizontally oriented substrates W, moves back and forth. The second center robot CR2 can access the above-mentioned path 54 as well as the developing chamber 71 in the fourth row CL4, the heat treatment chamber 75, the cooling unit 78, and the path 74, which are provided in the sixth row CL6 and will be described later.

[0056] Like the first center robot CR1, the second center robot CR2 is capable of moving back and forth in the X direction and moving up and down in the Z direction so as to transport the substrate W to each accessible position. The second center robot CR2 can orient the hand 76 that holds the substrate W at least to the front, left, or right.

[0057] In the sixth row CL6, heat treatment chambers 75 for heating substrates W and cooling units 78 for cooling substrates W are arranged in the X direction. The heat treatment chambers 75 have the same configuration as the heat treatment chambers 55 in the third row. Therefore, the heat treatment chambers 75 are configured by arranging circular hot plates 75a and circular post-heating treatment plates 75b in the Y direction. The cooling units 78 have the same configuration as the cooling units 58 in the third row CL3. Therefore, the cooling units 78 are provided with circular cooling treatment plates 58a.

[0058] The path 74 is provided at the rear end of the sixth column CL6. A horizontally oriented substrate W can travel between the developer block 7 and the interface block 9 via the path 74.

[0059] 6. Interface Block The interface block 9 has a path 94 capable of cooling a substrate W placed thereon, a first robot R1 capable of accessing the path 94 and the above-mentioned path 74, and a second robot R2 capable of accessing the path 94 and the stepper 2. The first robot R1 has a hand 961 capable of holding a substrate W placed in a horizontal position on the path 74, and the second robot R2 has a hand 962 capable of holding a substrate W placed in a horizontal position on the path 94.

[0060] The paths 94 are stacked in the Z direction to form a stack.

[0061] 6. Stepper The stepper 2 receives the substrate W before exposure processing, which is transported by the second robot R2, and performs exposure processing to print the circuit pattern of the device onto the photoresist layer of the substrate W. After exposure processing, the substrate W is handed over to the second robot R2.

[0062] 7. Control Unit As shown in Fig. 1, the substrate processing apparatus 1 includes a control unit 131 for controlling the apparatus. Although not shown in Fig. 1, the control unit 131 is also provided with a corresponding storage unit. The control unit 131 is configured, for example, by a CPU (Central Processing Unit). The specific configuration of the control unit is not limited, and for example, each control related to the substrate processing apparatus 1 may be configured by a single processor, or each control may be configured by an individual processor.

[0063] The control related to the control unit 131 includes, for example, control related to the indexer robot IR, the first center robot CR1, the second center robot CR2, the first robot R1, and the second robot R2.

[0064] The storage unit stores programs and parameters related to the control. The control unit may be configured as a single device, or may be configured as individual devices corresponding to each control. Furthermore, the substrate processing apparatus 1 of this example is not particularly limited in the configuration of the device that realizes the storage unit.

[0065] 8. Film formation process 4 is a flowchart illustrating the process when the coater block 5 of this embodiment forms an SOC layer, an SOG layer, and a photoresist layer on the substrate W. The process of forming each layer will be described below with reference to FIG.

[0066] Step S11: The substrate W stored in the carrier C is transported to the lower layer film deposition chamber 51 in the coater block 5 through the indexer block 3. The indexer robot IR transports the substrate W stored in the carrier C to the path 34 leading to the coater block 5. The first center robot CR1 transports the substrate W held by the path 34 to the lower layer film deposition chamber 51. The lower layer film deposition chamber 51 rotatably supports the substrate W via the spin chuck 8.

[0067] 5 is a cross-sectional view illustrating the configuration of a substrate W stored in a carrier C. The substrate W has a base 100 having the same thickness as when cut from a silicon ingot, and a layer to be processed 103 provided on the upper surface of the base 100. In the substrate W, the surface having the layer to be processed 103 is the front surface F, and the surface not having the layer to be processed 103 is the back surface B. The front surface F is the device surface of the substrate W on which devices are formed.

[0068] The layer to be processed 103 is made of, for example, a conductive material such as a metal film or an insulating material such as silicon oxide, etc. The layer to be processed 103 is a film to be processed in photolithography and is partially removed by etching.

[0069] Step S12: After the spin chuck 8 starts to rotate the substrate W, the nozzle 10 pivots to position the tip of the nozzle 10 on the upper surface of the substrate W. In this state, the nozzle 10 ejects the first coating liquid toward the substrate W. The first coating liquid spreads from the center of the rotating substrate W toward the outside of the substrate W, covering the surface F of the substrate W. When the first coating liquid has sufficiently spread over the substrate W, the nozzle 10 stops ejecting the first coating liquid.

[0070] Step S13: The solvent of the first coating liquid that coats the surface of the substrate W is dried. The first coating liquid may be dried by natural drying or spin drying. The first coating liquid dries to form a first layer on the surface of the substrate W. The first layer is composed of the polymeric aromatic compound and photocrosslinking agent contained in the first coating liquid.

[0071] FIG. 6 illustrates the first layer 101 formed in step S13. As shown in FIG. 6, the first layer 101 covers the top surface of the workpiece layer 103. The first layer 101 includes a lower layer 101a that will become an SOC layer in a subsequent light irradiation step (step S16 in FIG. 4) and an upper layer 101b that will be dissolved and eliminated by the second coating liquid in a subsequent step (step S14 in FIG. 4). That is, the upper layer 101b is dissolved by the second coating liquid and scattered by the rotation of the substrate W, thereby reducing the film thickness of the first layer 101. In this sense, the upper layer 101b can be considered a film that will be eliminated by subsequent substrate processing. The film thickness of the first layer 101 is, for example, approximately 200 nm. The film thickness of the first layer 101 can be appropriately changed by adjusting the rotation speed of the spin chuck 8 in step S12.

[0072] The above-described steps S12 and S13 correspond to the first film-forming step of the present invention. Steps S12 and S13 are steps of applying a first coating liquid containing an organic material and a first photo-crosslinking agent onto a substrate to form a first layer 101. The lower layer film-forming chamber 51 supplies the first coating liquid containing at least the organic material and the first photo-crosslinking agent as described above onto the substrate to form the first layer 101.

[0073] Step S14: The nozzle 10 ejects the second coating liquid toward the substrate W. The second coating liquid spreads from the center of the rotating substrate W toward the outside of the substrate W, covering the surface F of the substrate W. When the second coating liquid has sufficiently spread over the substrate W, the nozzle 10 stops ejecting the second coating liquid.

[0074] Step S15: The solvent of the second coating liquid that coats the surface of the substrate W is dried. The second coating liquid may be dried naturally or, as in this example, by spin drying. The second coating liquid dries to form a second layer on the surface of the substrate W. The second layer is composed of the polysilicon compound and second photo-crosslinking agent contained in the second coating liquid. The lower layer deposition chamber 51 supplies the second coating liquid containing at least the silicon material and the second photo-crosslinking agent onto the substrate to form the second layer 102.

[0075] The above-described steps S14 and S15 correspond to the second film-forming step of the present invention. In steps S14 and S15, a second coating liquid containing a silicon material and a second photo-crosslinking agent is applied onto the first layer 101 to form a second layer 102. The lower layer film-forming chamber 51 supplies the second coating liquid containing at least the silicon material and the second photo-crosslinking agent described above onto the substrate to form the second layer 102.

[0076] 7 illustrates the second layer 102 generated in step S15. As shown in FIG. 7, the second layer 102 covers the upper surface of the lower layer 101a of the first layer 101. In step S14, when the second coating liquid is supplied to the substrate W from the nozzle 10, the upper layer 101b of the first layer 101 on the surface F of the substrate W is dissolved by the solvent contained in the second coating liquid. This portion is scattered and disappears due to the rotation of the substrate W.

[0077] In step S15, when the drying of the solvent in the second coating liquid begins, the dissolution of the first layer 101 by the second coating liquid stops. This is because not only is the supply of new second coating liquid stopped, but also the solvent that causes the erosion of the first layer 101 is lost from the surface of the substrate W due to drying. The film thickness of the second layer 102 is, for example, approximately 10 nm to 35 nm. The film thickness of the second layer 102 can be appropriately changed by adjusting the rotation speed of the spin chuck 8 in step S14. Meanwhile, the film thickness of the first layer 101 (lower layer 101a) remaining on the surface of the substrate W is, for example, approximately 60 nm to 100 nm. The film thickness of the lower layer 101a of the first layer 101 can be appropriately changed by adjusting the supply amount of the second coating liquid in step S14.

[0078] Step S16: The substrate W having the second layer 102 formed on its surface F is transported to the light irradiation chamber 61 by the first central robot CR1.

[0079] Step S17: The substrate W is irradiated with ultraviolet light. As a result, as shown in FIG. 8, the first layer 101 (lower layer 101a) is cured by a polymerization reaction to become an SOC layer 105 (organic layer). Similarly, the second layer 102 is cured by a polymerization reaction to become an SOG layer 106 (silicon layer). In this manner, in this example, the SOC layer 105 and the SOG layer 106 are simultaneously formed by a single irradiation of ultraviolet light. Step S17 corresponds to the light irradiation step of the present invention. Step S17 is a step in which ultraviolet light is irradiated onto a laminate consisting of the first layer 101 and the second layer 102, whereby the first layer 101 is cured by a crosslinking reaction to become the SOC layer 105 and the second layer 102 is cured by a crosslinking reaction to become the SOG layer 106.

[0080] Thus, in step S17, the SOG layer 106 is irradiated with ultraviolet light from the light source 15 (see FIG. 2 ), which reaches the first layer 101. This ensures that the first layer 101 is cured to become the SOC layer 105. The light irradiation chamber 61 irradiates the laminate consisting of the first layer 101 and the second layer 102 with ultraviolet light, curing the first layer 101 through a crosslinking reaction to become the SOC layer 105, and curing the second layer 102 through a crosslinking reaction to become the SOG layer 106.

[0081] Step S18: Thereafter, the substrate W is transported to the resist chamber 53, where a photoresist layer is formed. FIG. 9 explains the photoresist layer 107 formed in this manner. As shown in FIG. 9, on the surface F of the substrate W before the exposure process, the workpiece layer 103, the SOC layer 105, the SOG layer, and the photoresist layer 107 are stacked in this order on the upper surface of the base 100. The film thickness of the photoresist layer 107 is, for example, 35 nm to 60 nm. Step S18 corresponds to the photoresist layer forming step of the present invention. In Step S18, a photoresist layer is formed on the cured layered structure. The resist chamber 53 corresponds to the third chamber of the present invention. The resist chamber 53 forms the photoresist layer 107 on the SOG layer 106. In this way, the film forming process for the substrate W in this example is completed.

[0082] 9.Appropriate amount of UV light exposure The appropriate dose of ultraviolet light in step S17 is 200 mJ / cm 2 is preferable. Figure 10 shows the results of an experiment showing the appropriate dose of ultraviolet light. The black circles in Figure 10 indicate how much the first layer 101 is reduced when a PGME:PGMEA mixed solution (PGME:PGMEA ratio = 7:3) is spin-coated without baking after ultraviolet light treatment under different conditions of different doses of irradiation is performed without forming the second layer 102 after forming the first layer 101 on the substrate. For comparison, the value 0 in the graph also indicates the reduction rate when no ultraviolet light treatment is performed. According to the graph, the reduction rate is 200 mJ / cm2 when the dose of ultraviolet light is 200 mJ / cm2. 2 If this is the case, it is clear that the first layer 101 has been sufficiently cured.

[0083] The white circles in Figure 10 show how much the first layer 101 is reduced when a PGME:PGMEA mixed solution (PGME:PGMEA ratio = 7:3) is spin-coated without baking after the second layer 102 is formed on the substrate and then treated with ultraviolet light at different irradiation doses. For comparison, the value 0 in the graph also shows the reduction rate when no ultraviolet light treatment is performed. According to the graph, when the ultraviolet irradiation dose is 200 mJ / cm 2If the value is above this, it can be seen that the second layer 102 is sufficiently cured. The configuration of this example is characterized in that the first layer 101 and the second layer 102 are cured by a single irradiation of ultraviolet light, and the irradiation amount of the ultraviolet light at this time is 200 mJ / cm 2 2 The above is preferable because experiments have shown that this amount of radiation is sufficient for curing the first layer 101 and the second layer 102.

[0084] 10. Substrate processing flow Next, the flow of substrate processing in this example will be described with reference to the flowchart of FIG.

[0085] Step T11: The unprocessed substrate W stored in the carrier C is transported to the path 34 by the indexer robot IR.

[0086] Step T12: The first central robot CR1 in the coater block 5 transports the substrate W obtained from the path 34 to the cooling unit 58. The substrate W is subjected to a cooling process in the cooling unit 58.

[0087] Step T13: The first central robot CR1 transports the substrate W in the cooling unit 58 to the lower layer film-forming chamber 51. The substrate W undergoes film-forming processing for the first layer 101 (lower layer 101a) and the second layer 102 in the lower layer film-forming chamber 51.

[0088] Step T14: The first central robot CR1 transports the substrate W from the lower layer film formation chamber 51 to the light irradiation chamber 61. The substrate W is subjected to ultraviolet light irradiation processing in the light irradiation chamber 61.

[0089] Step T15: The first central robot CR1 transports the substrate W from the heat treatment chamber 55 to the resist chamber 53. In the resist chamber 53, the substrate W is subjected to a film formation process of a photoresist layer.

[0090] Step T16: The first central robot CR1 transports the substrate W from the resist chamber 53 to the heat treatment chamber 55. The substrate W is subjected to heat treatment in the heat treatment chamber 55.

[0091] Step T17: The first central robot CR1 transports the substrate W from the heat treatment chamber 55 to the path 54. The substrate W on which the photoresist layer has been formed in this manner leaves the coater block 5.

[0092] Step T18: The second central robot CR2 in the developer block 7 transports the substrate W from the path 54 to the path 74.

[0093] Step T19: The first robot R1 in the interface block 9 transports the substrate W on the path 74 to the path 94.

[0094] Step T31: The second robot R2 transports the substrate W on the path 94 to the stepper 2. The stepper 2 performs exposure processing on the substrate W through a mask corresponding to the circuit pattern of the required device.

[0095] Step T32: The second robot R2 retrieves the substrate W that has been subjected to the exposure processing from the stepper 2 and transports it to the path 94.

[0096] Step T33: The first robot R1 transports the substrate W from the path 94 to the path 74. In this way, the substrate W exits the interface block 9 after the exposure processing.

[0097] Step T34: The second central robot CR2 in the developer block 7 transports the substrate W on the path 74 to the cooling unit 78. The substrate W is subjected to a cooling process in the cooling unit 78.

[0098] Step T35: The second central robot CR2 transports the substrate W in the cooling section 78 to the developing chamber 71. The substrate W is subjected to the developing process in the developing chamber 71.

[0099] Step T36: The second central robot CR2 transports the substrate W from the developing chamber 71 to the heat treatment chamber 75. The substrate W is subjected to heat treatment in the heat treatment chamber 75.

[0100] Step T37: The second central robot CR2 transports the substrate W from the heat treatment chamber 75 to the path 54. In this way, the substrate W that has been subjected to the development process leaves the developer block 7.

[0101] Step T38: The first central robot CR1 in the coater block 5 transports the substrate W in the path 54 to the path 34. In this way, the developed substrate W exits the coater block 5. The substrate W in the path 34 is returned to the original carrier C by the indexer robot IR.

[0102] 11. Effects of the present invention According to the above-described configuration, the method includes steps S12 and S13 of applying a first coating liquid containing an organic material and a first photo-crosslinking agent onto a substrate to form a first layer 101, steps S14 and S15 of applying a second coating liquid containing a silicon material and a second photo-crosslinking agent onto the first layer 101 to form a second layer 102, and a light irradiation step of irradiating light onto a laminate including the first layer 101 and the second layer 102 to harden the first layer 101 by a crosslinking reaction to form an SOC layer 105 and harden the second layer 102 by a crosslinking reaction to form an SOG layer 106. That is, the substrate processing method of this example includes forming the second layer 102 on the first layer 101 before it has hardened by the crosslinking reaction, and irradiating the first layer 101 and the second layer 102 with light to harden the first layer 101 and the second layer 102 at the same time to form the SOC layer 105 and the SOG layer 106, respectively. According to this example, the first layer 101 and the second layer 102 are cured together, which simplifies the formation of multiple layers compared to a method in which the SOC layer 105 is generated and then the second layer 102 is formed. According to this example, it is possible to provide an optimal substrate processing method from the viewpoints of power saving and miniaturization of the device.

[0103] According to the above-described configuration, the first layer 101 in the first layer forming step has a lower layer 101a that becomes the SOC layer 105 in the light irradiation step, and an upper layer 101b that is dissolved and disappears in the second coating liquid. With this configuration, the configuration of this example can be realized simply by forming the first layer 101 to be a relatively thick film.

[0104] According to the above-described configuration, the wavelength of the light irradiated in the light irradiation step is anywhere from 172 nm to 385 nm. If the light irradiated in the light irradiation step is ultraviolet light, the first layer 101 and the second layer 102 can be reliably converted into the SOC layer 105 and the SOG layer 106.

[0105] According to the above-described configuration, the SOG layer 106 allows the irradiated light in the light irradiation step to reach the first layer 101. This configuration prevents the light irradiated in the light irradiation step from being absorbed by the SOG layer 106 and not reaching the first layer 101, and ensures that the first layer 101 becomes the SOC layer 105.

[0106] The above-described substrate processing apparatus includes a lower layer deposition chamber 51 that supplies a first coating liquid containing at least an organic material and a first photo-crosslinking agent onto a substrate to form a first layer 101, a lower layer deposition chamber 52 that supplies a second coating liquid containing at least a silicon material and a second photo-crosslinking agent onto the first layer 101 to form a second layer 102, a light irradiation chamber that irradiates a laminate consisting of the first layer 101 and the second layer 102 with ultraviolet light to harden the first layer 101 by a crosslinking reaction to form an SOC layer 105 and harden the second layer 102 by a crosslinking reaction to form an SOG layer 106, and a resist chamber 53 that forms a photoresist layer on the SOG layer 106. According to this example, the first layer 101 and the second layer 102 are hardened together, which simplifies the formation of multiple layers compared to a method in which the SOC layer 105 is formed first and then the second layer 102 is formed. According to this example, it is possible to provide an optimum substrate processing apparatus from the viewpoints of power saving and miniaturization of the apparatus.

[0107] 12. Modified embodiments of the present invention The present invention is not limited to the above-described configuration, but can be modified as follows.

[0108] <Variation 1> According to the above-described configuration, the solvent of the second coating liquid is PGMEA or PGME, but the present invention is not limited to this configuration. The solvent of the second coating liquid may be one that is less soluble than PGMEA or the like. Examples of solvents that can be selected for the second coating liquid include MIBC (methyl isobutyl carbinol) and water. According to this modification, the solvent of the second coating liquid is less likely to dissolve the organic material that serves as the solute of the first coating liquid than the solvent of the first coating liquid. This configuration makes it difficult for the second coating liquid to dissolve the first layer 101 when applied to the first layer 101. Therefore, a laminated structure of the first layer 101 and the second layer 102 can be produced without forming the first layer 101 thicker by estimating the layer thickness that will be dissolved in the second coating liquid.

[0109] Furthermore, this modification can also prevent the upper layer 101a of the first layer 101 from dissolving. This is because the poorly soluble solvent has a lower ability to dissolve the first layer 101 than PGMEA or the like. This is advantageous because it can prevent the first layer 101 from being dissolved by the second coating liquid. However, in the method of this modification, a mixed layer (mixed layer) where the first layer 101 and the second layer 102 are mixed may be formed at the interface between the first layer 101 and the second layer 102. The mixed layer may interfere with exposure and etching. Therefore, to prevent the formation of the mixed layer, it is preferable to dry the first layer 101 in advance by a baking process.

[0110] <Variation 2> The second coating liquid may be prepared by adding an additive that promotes dissolution of the silicon material in the solvent. A suitable additive is PVDF (Polyvinylidene Fluoride). This configuration facilitates the formation of a laminated structure of the first layer 101 and the second layer 102.

[0111] <Variation 3> According to the above-described configuration, the solvent contained in the first layer 101 is removed by natural drying or spin drying, but the present invention is not limited to this configuration. That is, a first baking step for removing the solvent contained in the first layer 101 may be provided after step S12 and before step S14. This configuration ensures that the first layer 101 is dried, facilitating the formation of the SOC layer 105. The first baking step is performed in the heat treatment chamber 55 shown in FIG. 1. The first central robot CR1 transports the substrate W from the lower layer deposition chamber 51 to the heat treatment chamber 55. Furthermore, the substrate W after the baking process is transported from the heat treatment chamber 55 to the lower layer deposition chamber 51 by the first central robot CR1.

[0112] According to this modification, the first baking step bakes the substrate at a temperature between 100°C and 150°C. If the first baking step is a low-temperature baking, a substrate processing method that saves power can be provided. In particular, when the solvent of the first coating liquid is PGME or PGMEA, the first baking step preferably bakes the substrate W at a temperature of 200°C or higher.

[0113] Alternatively, the first layer 101 may be dried by other drying methods such as drying under reduced pressure.

[0114] <Variation 4> In the above-described configuration, the solvent contained in the second layer 102 is removed by natural drying or spin drying, but the present invention is not limited to this configuration. That is, a second baking step for removing the solvent contained in the second layer 102 may be provided after step S14 and before step S16. With this configuration, the second layer 102 can be reliably dried, facilitating the formation of the SOG layer 106. The second baking step is also performed in the heat treatment chamber 55 shown in FIG. 1. The first central robot CR1 transports the substrate W between the lower layer deposition chamber 51 and the heat treatment chamber 55.

[0115] According to this modification, the second baking step bakes the substrate at a temperature between 100°C and 150°C. If the second baking step is a low-temperature baking, a substrate processing method that saves power can be provided. In particular, when the solvent of the second coating liquid is PGME or PGMEA, the second baking step preferably bakes the substrate W at a temperature of 200°C or higher.

[0116] Alternatively, the second layer 102 may be dried by other drying methods such as drying under reduced pressure.

[0117] <Variation 5> In addition, the present invention can also be applied to forming a laminated structure other than the structure explained in FIG. 9, such as providing an anti-reflection film between the SOG layer 106 and the photoresist layer 107.

[0118] <Variation 6> In the above-described configuration, the first layer 101 and the second layer 102 are formed in the same lower layer film formation chamber 51, but the present invention is not limited to this configuration. The first layer 101 and the second layer 102 may be formed in different chambers.

[0119] <Variation 7> In the above-described lower layer deposition chamber 51, the first layer 101 is formed by spin coating, but the present invention is not limited to this configuration. The first layer 101 may also be formed by capillary coating or slit coating. The same applies to the second layer 102. [Explanation of symbols]

[0120] 1. Substrate processing equipment 1A housing 2 Stepper 3 Indexer Blocks 5 Coater Block 7 Developer Block 8 Spin Chuck 9 Interface Blocks 10 nozzles 11 Loading Port 12 Cover member 13 Lift pin 14 Sealing member 15 light source 16 through holes 17 Fixing pin 18 Exhaust piping 19 Air supply piping 20 Sealing material 21 Light source control unit 23 Bottom plate lifting mechanism 24 Exhaust section 25 Air supply section 26 Opening 34 Pass 36 hands 51 Lower layer deposition chamber 53 Resist Chamber 54 Pass 55 Heat Treatment Chamber 55a Hot plate 55b Post-heat treatment plate 56 hands 58 Cooling section 58a Cooling treatment plate 61 Light irradiation chamber 61a base plate 71 Development chamber 74 passes 75 Heat Treatment Chamber 75a hot plate 75b Post-heat treatment plate 76 hands 78 Cooling section 78a Cooling treatment plate 94 Pass 100 base 101 1st layer 101a low floor 101b high rise 102 2nd layer 103 Processed layer 105 SOC layer 106 SOG layer 107 Photoresist layer 131 Control Unit 961 hands 962 hands C Carrier CL1 1st row CL2 2nd row CL3 3rd row CL4 4th row CL5 5th row CL6 6th row CR1 1st Center Robot CR2 Second Center Robot IR Indexer Robot R1 First Robot R2 Second Robot B Back side F surface W substrate

Claims

1. A substrate processing method for forming a laminated structure on a substrate, the laminated structure including an organic layer, a silicon layer, and a photoresist layer, comprising: a first layer forming step of applying a first coating liquid containing an organic material and a first photocrosslinking agent onto a substrate to form a first layer; a second layer forming step of applying a second coating liquid containing a silicon material and a second photocrosslinking agent onto the first layer to form a second layer; a light irradiation step of irradiating a laminate including the first layer and the second layer with light to cure the first layer through a crosslinking reaction to form the organic layer and cure the second layer through a crosslinking reaction to form the silicon layer; a photoresist layer forming step of forming a photoresist layer on the cured laminate; A substrate processing method comprising:

2. 2. The substrate processing method according to claim 1, The first layer in the first layer forming step has a lower layer that becomes the organic layer in the light irradiation step and an upper layer that is dissolved and disappears in the second coating liquid. A substrate processing method comprising:

3. 2. The substrate processing method according to claim 1, The solvent of the second coating liquid in the second layer forming step dissolves the organic material less easily than the solvent of the first coating liquid in the first layer forming step. A substrate processing method comprising:

4. 4. The substrate processing method according to claim 3, The second coating liquid in the second layer forming step contains an additive that promotes dissolution of the silicon material in a solvent. A substrate processing method comprising:

5. 2. The substrate processing method according to claim 1, The light irradiated in the light irradiation step is ultraviolet light having a wavelength of 172 nm to 385 nm. A substrate processing method comprising:

6. 2. The substrate processing method according to claim 1, The silicon layer allows the irradiated light to reach the first layer in the light irradiation step. A substrate processing method comprising:

7. 2. The substrate processing method according to claim 1, a first baking step of removing a solvent contained in the first layer after the first layer generating step and before the second layer generating step; a second baking step of removing a solvent contained in the second layer after the second layer generating step and before the light irradiation step; A substrate processing method comprising:

8. 8. The substrate processing method according to claim 7, The first baking step bakes the substrate at a temperature between 100°C and 150°C, The second baking step bakes the substrate at a temperature between 100°C and 150°C. A substrate processing method comprising:

9. A substrate processing apparatus for forming a laminated structure composed of an organic layer, a silicon layer, and a photoresist layer on a substrate, a first chamber for supplying a first liquid containing at least an organic material and a first photocrosslinking agent onto a substrate to form a first layer; a second chamber for supplying a second liquid containing at least a silicon material and a second photocrosslinking agent onto the first layer to form a second layer; a light irradiation chamber that irradiates a laminate including the first layer and the second layer with light to harden the first layer through a crosslinking reaction to form an organic layer and harden the second layer through a crosslinking reaction to form a silicon layer; a third chamber for depositing a photoresist layer on the silicon layer. A substrate processing apparatus comprising:

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