Template with sacrificial layer, method for manufacturing template with sacrificial layer, method for remanufacturing template with sacrificial layer, and method for manufacturing semiconductor device

Abstract

To provide a template with sacrificial layer, a method for manufacturing a template with sacrificial layer, a method for remanufacturing a template with sacrificial layer, and a method for manufacturing a semiconductor device that can suppress defects in a template pattern.SOLUTION: A method for manufacturing a template with sacrificial layer according to an embodiment includes forming a sacrificial layer on a substrate and forming a first pattern on a surface of the sacrificial layer opposite to the surface that contacts the substrate, forming a replication material layer on the first pattern surface of the sacrificial layer, and contacting the surface of the replication material layer opposite to the surface that contacts the sacrificial layer with a template substrate via an adhesive film, and hardening the replication material layer to form a replication portion having a second pattern corresponding to the first pattern, and then peeling the sacrificial layer from the substrate.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present embodiment relates to a template with a sacrificial layer, a method for manufacturing a template with a sacrificial layer, a method for remanufacturing a template with a sacrificial layer, and a method for manufacturing a semiconductor device. [Background technology]

[0002] The template used in the imprint process has a pattern including projections and recesses. Before the template is used in the imprint process, the surface bearing the desired pattern is peeled off from the underlying template substrate, which can result in defects in the pattern. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-149488 [Patent Document 2] Patent Publication No. 2021-150461 [Patent Document 3] Japanese Patent Application Laid-Open No. 2014-120584 Summary of the Invention [Problem to be solved by the invention]

[0004] The problem to be solved by the embodiments of the invention is to provide a template with a sacrificial layer that can suppress defects in the template pattern, a method for manufacturing a template with a sacrificial layer, a method for remanufacturing a template with a sacrificial layer, and a method for manufacturing a semiconductor device. [Means for solving the problem]

[0005] A method for manufacturing a template with a sacrificial layer according to an embodiment includes forming a sacrificial layer on a substrate and forming a first pattern on a surface of the sacrificial layer opposite to the surface that contacts the substrate, forming a replication material layer on the first pattern surface of the sacrificial layer, and contacting the surface of the replication material layer opposite to the surface that contacts the sacrificial layer with a template substrate via an adhesive film, and hardening the replication material layer to form a replication portion having a second pattern corresponding to the first pattern, and then peeling the sacrificial layer from the substrate. [Brief explanation of the drawings]

[0006] [Figure 1] 3A and 3B are a top view and a cross-sectional view schematically showing an example of the configuration of a template according to the first embodiment. [Figure 2] 5A to 5C are cross-sectional views schematically showing an example of a procedure for a method for manufacturing a first template portion of the template in the first embodiment. [Figure 3] 5A to 5C are cross-sectional views schematically showing an example of a procedure for a method for manufacturing a second template portion of the template in the first embodiment. [Figure 4] 3A to 3C are cross-sectional views schematically showing an example of a procedure of a method for manufacturing a template according to the first embodiment. [Figure 5] 10A to 10C are cross-sectional views schematically showing an example of a procedure for a method for manufacturing a third template portion of the template according to the second embodiment. [Figure 6] 10A to 10C are cross-sectional views schematically showing an example of a procedure of a method for manufacturing a template according to a second embodiment. [Figure 7] 10A and 10B are a top view and a cross-sectional view schematically showing an example of the configuration of a template according to a third embodiment. [Figure 8] FIG. 13 is a diagram showing an example of movement of a template in the fourth embodiment. [Figure 9] 10A to 10C are cross-sectional views schematically showing an example of a procedure for a method for manufacturing a semiconductor device according to a fifth embodiment. [Figure 10] 13A to 13C are cross-sectional views schematically showing an example of a procedure of a template remanufacturing method according to a fifth embodiment. [Figure 11]FIG. 13 is a flowchart showing an example of a procedure of a template remanufacturing method according to a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiment. The drawings are schematic or conceptual, and the proportions of the various parts are not necessarily the same as those in reality. In the specification and drawings, elements similar to those described above with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) Fig. 1 is a diagram schematically showing an example of the configuration of a template 1 in the first embodiment. Fig. 1(A) is a top view of the template 1, and Fig. 1(B) is a cross-sectional view taken along line AA in Fig. 1(A). Fig. 1(C) is a cross-sectional view taken along line AA showing an example in which a sacrificial layer 70 (described later) is formed on the template 1, and Fig. 1(D) is a cross-sectional view taken along line AA showing an example in which a sacrificial layer 70 (described later) and a second substrate 60 (described later) are formed on the template 1.

[0009] The template 1 includes a template substrate 10, a replication portion 20, and an adhesion film 30.

[0010] The template substrate 10 has a rectangular base 11 and a mesa 13 provided near the center of a first base surface 12 of the base 11. Multiple mesa portions 13 may be provided, or no mesa portion 13 may be provided. When no mesa portion 13 is provided, an adhesion film 30 (described later) is provided so as to contact the first base surface 12. The template substrate 10 may be made of a material that is transmissive to ultraviolet light, and may include, for example, quartz glass.

[0011] The base 11 has, for example, a rectangular flat plate structure. A mesa portion 13 is provided near the center of the base first surface 12. The base 11 includes, for example, silica glass.

[0012] The mesa portion 13 includes, for example, quartz glass and has a rectangular, flat plate-like structure. The mesa portion 13 has a shape that protrudes from approximately the center of the first base surface 12, and is a rectangle that is smaller than the base portion 11 in top view. The mesa portion 13 protrudes from the first base surface 12, and a first mesa surface 14, which is the surface of the mesa portion 13 opposite to the surface that contacts the first base surface 12, contacts an adhesive film 30, which will be described later. The base portion 11 and the mesa portion 13 may be formed integrally or separately. A plurality of mesa portions 13 may be provided.

[0013] When a plurality of mesas 13 are provided, the mesa provided near the center of the first base surface 12 is referred to as the first mesa, and the mesa provided near the center of the surface of the first mesa opposite to the surface in contact with the first base surface 12 is referred to as the second mesa. In this case, the second mesa may have, for example, a rectangular flat plate-like structure, and may be smaller in size than the first mesa. In other words, the second mesa may be a rectangle smaller than the first mesa when viewed from above.

[0014] The replication unit 20 has a pattern surface 21 on the surface opposite to the surface that contacts the adhesion film 30 described below. The pattern surface 21 has an uneven pattern that comes into contact with a resist on a workpiece (not shown) during imprint processing. The pattern surface 21 may be provided with a pattern placement area 21A that is rectangular in top view, and a frame-shaped mark placement area 21B that is provided on the periphery of the pattern placement area 21A. For example, patterns such as devices and wiring to be formed on the workpiece are placed in the pattern placement area 21A. For example, marks such as alignment marks for aligning with the workpiece are placed in the mark placement area 21B.

[0015] The replication part 20 may be made of a replication material 20' that hardens under ultraviolet light or heat, for example. The replication material 20' may be a transparent resin, such as acrylic, epoxy, polyamide, or polyimide, containing a UV-light polymerization initiator. The replication material 20' includes a photocurable material having a reactive group that hardens under ultraviolet light. The reactive group that hardens under ultraviolet light may be, for example, a photoradical polymerizable group having at least one reactive group selected from an acryloyl group, a methacryloyl group, and a vinyl ether group, or a photocationic polymerizable group having at least one reactive group selected from an epoxy group and an oxetanyl group. When a material that hardens under ultraviolet light is used as the replication material 20', the replication part 20 hardly shrinks during hardening.

[0016] In addition to the above-mentioned photocurable materials containing ultraviolet photopolymerization initiators, resins that cure in response to heat may also be used as the replication material 20'. Examples of thermosetting resins include novolac resin and vinyl resin. When the replication part 20 contains a thermosetting resin, the replication material 20' contains reactive groups for curing by heat and does not contain a photocurable material. When using a thermosetting resin, the replication part 20 may shrink during curing, so the shrinkage rate must be calculated in advance before curing.

[0017] The adhesive film 30 is provided between the mesa first surface 14 and the surface opposite to the surface on which the pattern surface 21 of the replica portion 20 is provided. The template substrate 10 and the replica portion 20 are adhered to each other via the adhesive film 30.

[0018] To provide adhesion, the adhesion film 30 is made of a material containing molecules that bond by hydrogen or covalent bonds between the template substrate 10 and the replication portion 20. The adhesion film 30 may contain reactive groups for bonding with the replication portion 20 and reactive groups for bonding with the template substrate 10.

[0019] As described above, the replication unit 20 includes a reactive group for hardening. For example, when the replication unit 20 is made of a material having a photoradical polymerizable group, a material including a photoradical polymerizable group is exemplified as the reactive group for bonding to the replication unit 20. When the replication unit 20 is made of a material having a photocationic polymerizable group, a material including a photocationic polymerizable group is exemplified as the reactive group for bonding to the replication unit 20.

[0020] Furthermore, when the template substrate 10 includes quartz glass, the reactive group contained in the adhesion film 30 can be exemplified by a silane coupling agent for bonding to the template substrate 10. Examples of such silane coupling agents include monoalkoxysilanes, dialkoxysilanes, trialkoxysilanes, monochlorosilanes, dichlorosilanes, and trichlorosilanes. Therefore, the adhesion film 30 includes, for example, a silane coupling agent having a photoradical polymerizable group or a silane coupling agent having a photocationic polymerizable group.

[0021] Examples of such adhesive film 30 include 3-(Trimethoxysilyl)propyl Acrylate, 3-[Diethoxy(methyl)silyl]propyl Methacrylate, 3-(Trimethoxysilyl)propyl Methacrylate, 3-[Tris(trimethylsilyloxy)silyl]propyl Methacrylate, 3-[Dimethoxy(methyl)silyl]propyl Methacrylate, 3-(Methoxydimethylsilyl)propyl Acrylate, 3-(Triethoxysilyl)propyl Methacrylate, 3-(Triallylsilyl)propyl Acrylate, 3-(Triallylsilyl)propyl Methacrylate, Diethoxy(3-glycidyloxypropyl)methylsilane, 3-Glycidyloxypropyltrimethoxysilane, 3-Glycidyloxypropyl(dimethoxy)methylsilane, [8-(Glycidyloxy)-n-octyl]trimethoxysilane, Triethoxy(3-glycidyloxypropyl)silane.

[0022] For example, when 3-(trimethoxysilyl)propyl acrylate is used as the adhesive film 30, the trimethoxysilyl groups contained in the adhesive film 30 bond to the template substrate 10 containing quartz glass through a silane coupling reaction. Furthermore, the acryloyl groups contained in the adhesive film 30 bond to the replication unit 20 having a photoradical polymerizable group through a photopolymerization reaction. In this way, the adhesive film 30 can firmly bond the template substrate 10 and the replication unit 20 together.

[0023] The sacrificial layer 70 is formed on the pattern surface 21 of the replication unit 20. At this time, the sacrificial layer 70 may be thick enough to cover the convex portions of the pattern surface 21. In other words, the thickness of the sacrificial layer 70 may be greater than the height of the convex portions of the pattern surface 21 in the stacking direction.

[0024] The sacrificial layer 70 may be made of a sacrificial material 70' that hardens with ultraviolet light, heat, or the like to become the sacrificial layer 70, and may be made of, for example, a material similar to that exemplified as the replication material 20'. However, it is preferable to use a sacrificial material 70' such that the sacrificial layer 70 has a higher etching rate than the replication portion 20 with respect to a material (such as an etching agent) used in etching to remove the sacrificial layer 70 from the first template portion 50 and the replication portion 20, which will be described later.

[0025] The second substrate 60 is formed on the surface of the sacrificial layer 70 opposite to the surface in contact with the pattern surface 21. The second substrate 60 is, for example, a silicon substrate.

[0026] As shown in FIG. 1(C), the template 1'B with a sacrificial layer may include a template 1 and a sacrificial layer 70. The template 1'B with a sacrificial layer will hereinafter be abbreviated to template 1'B. Also, in FIG. 1(D), the template 1'A with a sacrificial layer and substrate may include a template 1, a sacrificial layer 70, and a second substrate 60. The template 1'A with a sacrificial layer and substrate will hereinafter be abbreviated to template 1'A.

[0027] 2, 3, and 4 are cross-sectional views schematically illustrating an example of a procedure for manufacturing the template 1 in the first embodiment. Here, a case will be described in which the adhesion film 30 and the replication material 20′ are materials containing photoradical polymerizable groups.

[0028] FIG. 2 is a cross-sectional view showing an example of a procedure for manufacturing a first template member 50. As shown in FIG. 2(A), a first substrate 40 having a quadrilateral cross section is first prepared as a starting material. Next, as shown in FIG. 2(B), a resist pattern 41 is formed on the first substrate 40 to cover an area corresponding to the mesa portion 13. The first substrate 40 is made of a material that is transparent to ultraviolet light, and may be quartz glass, for example. Then, as shown in FIG. 2(C), the first substrate 40 is wet-etched using the resist pattern 41 to form the mesa portion 13. The portion of the first substrate 40 remaining after etching, other than the mesa portion 13, becomes the base portion 11. In this way, a template substrate 10 including the base portion 11 and the mesa portion 13 is formed. After the mesa portion 13 is formed, the remaining resist pattern 41 is removed.

[0029] In FIG. 2(D), an adhesion film 30 having photoradical polymerizable groups is formed on the first mesa surface 14 of the formed mesa portion 13 by a film formation method such as vapor deposition. For example, the adhesion film 30 contains the above-described 3-(trimethoxysilyl)propyl acrylate. When the adhesion film 30 is vapor-deposited on the template substrate 10, the trimethoxysilyl groups bond to the template substrate 10, which contains quartz glass, through a silane coupling reaction. This reaction forms the adhesion film 30 with the acryloyl groups facing outward. At this point, the template substrate 10 and the adhesion film 30 constitute a first template portion 50.

[0030] 3A and 3B are cross-sectional views showing an example of a method for manufacturing the second template part 90. FIG. 3A and 3B show an example of a method for manufacturing the replica part 20.

[0031] As shown in FIG. 3A, first, a sacrificial material 70' is formed on a second substrate 60. The second substrate 60 is, for example, a silicon substrate. The sacrificial material 70' is formed by, for example, spin coating or sputtering. The sacrificial material 70' may be a material that is cured by ultraviolet light or heat. When the sacrificial material 70' is cured by ultraviolet light or heat, it becomes a sacrificial layer 70 after curing.

[0032] The sacrificial material 70′ may be, for example, a material similar to that exemplified as the replication material 20′. However, it is preferable to use a sacrificial material 70′ such that the sacrificial layer 70 has a higher etching rate than the replication portion 20 with respect to a material used in etching to remove the sacrificial layer 70 from the first template portion 50 and the replication portion 20, as will be described later. In addition, it is preferable that the height of the sacrificial layer 70 in the stacking direction is greater than the height of the recesses in the pattern formed in the sacrificial layer 70.

[0033] When the sacrificial material 70' is a material that hardens under ultraviolet light, it may be, for example, a transparent resin such as acrylic, epoxy, polyamide, or polyimide containing an ultraviolet light polymerization initiator. The sacrificial material 70' includes a photocurable material having a reactive group that hardens under ultraviolet light. The reactive group that hardens under ultraviolet light may be, for example, a photoradical polymerizable group having at least one reactive group selected from an acryloyl group, a methacryloyl group, and a vinyl ether group, or a photocationic polymerizable group having at least one reactive group selected from an epoxy group and an oxetanyl group. When the sacrificial material 70' is a material that reacts with ultraviolet light and hardens under ultraviolet light, the sacrificial layer 70 hardly shrinks during hardening.

[0034] In addition to the above-mentioned photocurable materials containing an ultraviolet photoinitiator, resins that cure in response to heat may also be used as the sacrificial material 70′. Examples of thermosetting resins include novolac resin and vinyl resin. When the sacrificial layer 70 contains a thermosetting resin, the sacrificial material 70′ contains reactive groups for curing by heat and does not contain a photocurable material. When a thermosetting resin is used, the sacrificial layer 70 may shrink during curing, so the shrinkage rate must be calculated in advance before curing. When a thermosetting resin is used, the sacrificial material 70′ is formed while taking the shrinkage rate into consideration so that the height of the sacrificial layer 70 in the stacking direction is greater than the height of the recesses in the pattern formed on the sacrificial layer 20 in the stacking direction.

[0035] Alternatively, a material capable of retaining its shape without being cured by ultraviolet light or heat may be used as the sacrificial material 70′. A material capable of retaining its shape has a hardness sufficient to maintain a pattern formed in the sacrificial material 70′ even after the master template 80 is peeled off in a process described below. In this case, there is no need to cure the sacrificial material 70′ by ultraviolet light or heat, and the sacrificial material 70′ also functions as the sacrificial layer 70.

[0036] Hereinafter, the sacrificial material 70' and the sacrificial layer 70 will be described using an example of novolac resin having a reactive group that hardens when heated.

[0037] 3(B) and 3(C), a master template 80 is aligned and then pressed against the sacrificial material 70'. The master template 80 has the same pattern as the concave-convex pattern formed on the pattern surface 21 of the replication unit 20. While the master template 80 is pressed against the sacrificial material 70', heat is applied to the sacrificial material 70' to harden it.

[0038] 3(D), the sacrificial material 70' is hardened by application of heat, and becomes the sacrificial layer 70. After the sacrificial layer 70 is formed, the master template 80 is removed, and a resist pattern 71 is formed on the upper surface of the sacrificial layer 70. The resist pattern 71 is a pattern corresponding to the concave-convex pattern formed on the pattern surface 21 of the replication unit 20.

[0039] 3(E), a liquid replication material 20' having photoradical polymerizable groups is formed by spin coating over the entire surface of the sacrificial layer 70. The replication material 20' is formed to a substantially uniform thickness over the entire surface of the sacrificial layer 70, filling the recesses in the sacrificial layer 70. The second substrate 60, the sacrificial layer 70, and the replication material 20' (or the replication portion 20) form a second template portion 90.

[0040] FIG. 4 is a cross-sectional view showing an example of a manufacturing method for bonding a first template unit 50 and a replication unit 20 via an adhesive film 30. As shown in FIG. 4(A), the first template unit 50 is positioned so that the adhesive film 30 on the first template unit 50 faces the replication material 20′ on the second template unit 90. Next, the adhesive film 30 and the replication material 20′ are aligned and then bonded. At this time, the space in which the first template unit 50 and the second template unit 90 are placed is set to an atmosphere that inhibits reaction when irradiated with light. In other words, when using a replication material 20′ having photoradical polymerizable groups, the atmosphere is set to contain oxygen.

[0041] Next, as shown in FIGS. 4(B) and 4(C), while the first template member 50 is pressed against the substrate, ultraviolet light is irradiated onto the replication material 20′ through the first template member 50. As a result, in the region irradiated with ultraviolet light, where the adhesion film 30 and the replication material 20′ are in contact with each other, they bond and harden through a photoradical polymerization reaction. The replication material 20′ hardens to form the replication portion 20. Thus, as shown in FIG. 4(C), a template 1′A is formed, including the first template member 50, the replication portion 20, the sacrificial layer 70, and the second substrate 60. While the ultraviolet light is preferably irradiated onto the region of the first template member 50 corresponding to the mesa portion 13, the ultraviolet light is typically irradiated onto a wider area than the region corresponding to the mesa portion 13. Because the mesa portion 13 protrudes from the first base surface 12, the area surrounding the mesa portion 13 is filled with an oxygen-containing atmosphere. In an oxygen-containing atmosphere, photo-radical polymerizable groups are difficult to harden, so even if ultraviolet light is irradiated around the mesa portion 13, the replication material 20' will not harden in other areas that are not in contact with the adhesive film 30 and will remain liquid.

[0042] 4(D), the first template member 50, the replica member 20, and the sacrificial layer 70 are peeled off from the second substrate 60. At this time, the fracture stress between the sacrificial layer 70 and the second substrate 60 is smaller than the fracture stress between the adhesion film 30 and the replica member 20, the fracture stress of the replica member 20, the fracture stress between the replica member 20 and the sacrificial layer 70, and the fracture stress of the sacrificial layer 70. Therefore, when the first template member 50, the replication member 20, and the sacrificial layer 70 are peeled off from the second substrate 60, the replication member 20 and the sacrificial layer 70 are prevented from peeling off from the first template member 50. Furthermore, the replication member 20 and the sacrificial layer 70 are prevented from breaking, and the sacrificial layer 70 can be peeled off from the boundary between the replication member 20 and the second substrate 60. Furthermore, because the replication material 20' is not hardened in areas other than the area corresponding to the mesa member 13, the fracture stress of the replication member 20 in the area corresponding to the mesa member 13 is greater than the fracture stress of the replication material 20' in areas other than the area corresponding to the mesa member 13. Therefore, during peeling, the replication member 20 is peeled off at the boundary between the area corresponding to the mesa member 13 and the other areas, and is separated from the second substrate 60. Figure 4(E) shows the template 1'B formed after the second substrate 60 is peeled off in Figure 4(D).

[0043] Next, as shown in Fig. 4(F), wet etching is performed to remove the sacrificial layer 70 from the first template portion 50 and the replication portion 20. In Fig. 4(E), a template 1'B is formed, which includes the template substrate 10, the adhesion film 30, the replication portion 20, and the sacrificial layer 70. In other words, the sacrificial layer 70 is removed from the template 1'B, and the template 1 is formed. Comparing the replication portion 20 and the sacrificial layer 70, they have different etching rates with respect to the chemicals used in wet etching, with the sacrificial layer 70 having a higher etching rate than the replication portion 20. In other words, wet etching removes almost no replication portion 20, and mainly removes the sacrificial layer 70. When the sacrificial layer 70 is removed from the template 1'B, a template 1 is formed, which includes the template substrate 10, the adhesion film 30 on the template substrate 10, and the replication portion 20 on the adhesion film 30. A pattern surface 21 having an uneven pattern that comes into contact with the resist on the workpiece during the imprint process of the semiconductor device is provided on the surface of the replication portion 20 opposite to the surface that comes into contact with the adhesion film 30.

[0044] The sacrificial layer 70 can be removed from the first template portion 50 and the replica portion 20 by dry etching (RIE, Reactive Ion Etching) in addition to wet etching. In the case of dry etching, the etching rate of the sacrificial layer 70 is also higher than the etching rate of the replica portion 20. The materials of the sacrificial layer 70 and the replica portion 20 may be selected based on the above conditions.

[0045] As a comparative example, a case will be described in which a concave-convex pattern corresponding to the concave-convex pattern formed on the pattern surface 21 of the replication portion 20 is provided on the second substrate 60. After a pattern corresponding to the desired pattern is formed on the second substrate 60, the replication portion 20 is formed by forming and curing a replication material 20' on the pattern-formed surface of the second substrate 60. Thereafter, the replication portion 20 and the template substrate 10 are bonded via the adhesive film 30, and the second substrate 60 is then peeled off from the replication portion 20.

[0046] In recent years, the aspect ratio of patterns in semiconductor devices has increased, and the aspect ratio of the concave-convex patterns provided on templates has correspondingly increased. Therefore, the patterns provided on the second substrate 60 and the sacrificial layer 70, which correspond to the concave-convex patterns of the pattern to be provided on the template, also have a high aspect ratio. When peeling occurs between the second substrate 60 and the replication unit 20, a pattern including concave-convex patterns is formed on the peeled surface. Therefore, when peeling the replication unit 20 from the second substrate 60 after bonding the template substrate 10 and the replication unit 20, the convex portions of the pattern on the replication unit 20 may not completely peel off from the concave portions of the second substrate 60 and may remain, resulting in poor pattern formation.

[0047] In this embodiment, the sacrificial layer 70 is removed from the template 1 by etching before use in the imprint process. That is, when removing the sacrificial layer 70 from the template substrate 10, the replication portion 20, and the adhesion film 30, wet etching or dry etching is performed using an etching ratio between the sacrificial layer 70 and the replication portion 20 to remove the sacrificial layer 70. When removing the sacrificial layer 70, the load applied to the pattern formed on the pattern surface 21 of the replication portion 20 is reduced, thereby suppressing pattern defects. Furthermore, the sacrificial layer 70 is provided between the second substrate 60 and the replication portion 20, and a pattern is formed on the sacrificial layer 70. Then, the sacrificial layer 70 is peeled off from the second substrate 60. Because no pattern is provided between the sacrificial layer 70 and the second substrate 60, pattern defects when the second substrate 60 is peeled off can be suppressed. When removing the sacrificial layer 70 from the template substrate 10, the replication portion 20, and the adhesion film 30, etching is performed to prevent convex portions of the pattern of the replication portion 20 from remaining in concave portions of the sacrificial layer 70. Therefore, pattern defects can be suppressed. Furthermore, since the number of templates having defective patterns is reduced compared to the comparative example during template manufacturing, the manufacturing cost of the templates can be reduced.

[0048] (Second embodiment) The configuration of the template 1 in the second embodiment is similar to the configuration of the template 1 in the first embodiment, and therefore a description thereof will be omitted. In addition, the configuration of the first template unit 50 used in this embodiment may also be similar to the configuration of the template 1 in the first embodiment, and therefore a description thereof will be omitted.

[0049] 5 and 6 are cross-sectional views schematically illustrating an example of a procedure for manufacturing the template 1 in the second embodiment. Here, a case will be described in which the adhesion film 30 and the replication material 20′ before hardening of the replication portion 20 contain a photocurable material having a photoradical polymerizable group.

[0050] 5A and 5B are cross-sectional views showing an example of a method for manufacturing a replica portion 20 bonded to a template substrate 10 via an adhesive film 30. As shown in FIG. 5A, first, a first sacrificial material 72' is formed on a second substrate 60. The second substrate 60 is, for example, a silicon substrate. The first sacrificial material 72' is formed by, for example, spin coating or sputtering. The first sacrificial material 72' may be a material that is cured by ultraviolet light or heat. When the first sacrificial material 72' is cured by ultraviolet light or heat, it becomes a first sacrificial layer 72 after curing.

[0051] The first sacrificial material 72′ may be, for example, a material similar to that exemplified as the replication material 20′. However, it is preferable to use a first sacrificial material 72′ such that the first sacrificial layer 72 has a higher etching rate than the replication portion 20 with respect to the material used in the etching.

[0052] When the first sacrificial material 72′ is a material that hardens under ultraviolet light, it may be, for example, a transparent resin such as acrylic, epoxy, polyamide, or polyimide containing a UV-light polymerization initiator. The first sacrificial material 72′ includes a material having a reactive group that hardens under ultraviolet light. The reactive group that hardens under ultraviolet light may be, for example, a photoradical polymerizable group having at least one reactive group selected from an acryloyl group, a methacryloyl group, and a vinyl ether group, or a photocationic polymerizable group having at least one reactive group selected from an epoxy group and an oxetanyl group. When the first sacrificial material 72′ is hardened under ultraviolet light, the first sacrificial layer 72 hardly shrinks.

[0053] In addition to the above-mentioned materials containing an ultraviolet photopolymerization initiator, a resin that hardens in response to heat may also be used as the first sacrificial material 72′. Examples of thermosetting resins include novolac resin and vinyl resin. When the first sacrificial layer 72 contains a thermosetting resin, the first sacrificial material 72′ contains reactive groups for hardening by heat, but does not necessarily contain reactive groups that react with ultraviolet light. Furthermore, when a thermosetting resin is used as the first sacrificial material 72′, the first sacrificial layer 72 may shrink during hardening, so the shrinkage rate must be calculated in advance before hardening.

[0054] Alternatively, the first sacrificial material 72′ may be a material that can retain its shape without being cured with ultraviolet light or heat. A material that can retain its shape means that when a pattern is formed in the first sacrificial material 72′ in a process described below, the material has a hardness that allows the pattern to be maintained even after the master template 80 is peeled off. In this case, there is no need to cure the first sacrificial material 72′ with ultraviolet light or heat, and the first sacrificial material 72′ also functions as the first sacrificial layer 72.

[0055] Hereinafter, the first sacrificial material 72' and the first sacrificial layer 72 will be described using an example of novolac resin having a reactive group that is cured by heat.

[0056] Next, as shown in FIGS. 5(B) and 5(C), the first sacrificial material 72′ is hardened by applying heat, thereby forming the first sacrificial layer 72.

[0057] Next, as shown in FIG. 5(D), a second sacrificial material 73′ is formed on the first sacrificial layer 72. The second sacrificial material 73′ is formed by, for example, spin coating or sputtering. For the second sacrificial material 73′, it is preferable to use a material that has a higher etching rate than the replication portion 20 with respect to the material used in etching the second sacrificial layer 73 after hardening. It is also preferable that the height of the second sacrificial layer 73 in the stacking direction is higher than the height of the recesses in the pattern formed in the second sacrificial layer 73.

[0058] When the second sacrificial material 73′ is cured by ultraviolet light or heat, it becomes the second sacrificial layer 73 after curing. However, it is preferable to use a material different from the material selected for the first sacrificial material 72′. It is also preferable to use a material for the second sacrificial material 73′ such that the fracture stress of the second sacrificial layer 73 is greater than at least the fracture stress between the second substrate 60 and the first sacrificial layer 72 and the fracture stress of the first sacrificial layer 72.

[0059] When the second sacrificial layer 73 includes a thermosetting resin, the second sacrificial material 73' includes a reactive group for hardening by heat, but does not necessarily include a reactive group that reacts with ultraviolet light. Furthermore, when a thermosetting resin is used as the second sacrificial material 73', the second sacrificial layer 73 may shrink when hardened, so the shrinkage rate must be calculated in advance before hardening. When a thermosetting resin is used as the second sacrificial material 73', the second sacrificial material 73' is formed while taking the shrinkage rate into consideration so that the height of the second sacrificial layer 73 in the stacking direction is greater than the height of the recesses in the pattern formed on the sacrificial layer 20 in the stacking direction.

[0060] The following description will be given taking as an example a case where a novolac resin having a reactive group that is cured by heat is used as the second sacrificial material 73′ and the second sacrificial layer 73. Note that the novolac resin used as the second sacrificial material 73′ and the second sacrificial layer 73 is a different type from the novolac resin contained in the first sacrificial material 72′ and the first sacrificial layer 72.

[0061] 5(E) and 5(F), a master template 80 is aligned and then pressed against the second sacrificial material 73'. The master template 80 has the same concave-convex pattern as the patterned surface of the replication section 20. While the master template 80 is pressed against the second sacrificial material 73', heat is applied to harden the second sacrificial material 73'.

[0062] 5(G), the second sacrificial material 73' is hardened by application of heat, and becomes the second sacrificial layer 73. After the second sacrificial layer 73 is formed, the master template 80 is removed, and a resist pattern 71 is formed on the second sacrificial layer 73. The resist pattern 71 is a pattern corresponding to the concave-convex pattern formed on the pattern surface 21 of the replication unit 20.

[0063] 5(H), a liquid replication material 20′ having a photoradical polymerizable group is formed by spin coating over the entire surface of the second sacrificial layer 73. The replication material 20′ is formed to a substantially uniform thickness over the entire surface of the second sacrificial layer 73, filling the recesses in the second sacrificial layer 73. The second substrate 60, the first sacrificial layer 72, the second sacrificial layer 73, and the replication material 20′ (or the replication portion 20) form a third template portion 100.

[0064] 6A to 6C are cross-sectional views showing an example of a manufacturing method for bonding a first template unit 50 and a replication unit 20 via an adhesive film 30. The procedures in Figs. 6A to 6C may be similar to those in the first embodiment, and therefore will not be described further. That is, Figs. 6A to 6C show a method similar to Figs. 4A to 4C, in which the replication material 20' is hardened by irradiation with ultraviolet light to become the replication unit 20. Thus, in FIG. 6(C), a template 1'A is formed, which includes the first template part, the replica part 20, the sacrificial layer 70, and the second substrate 60.

[0065] 6(D), the first template member 50, the replication member 20, the first sacrificial layer 72, and the second sacrificial layer 73 are peeled off from the second substrate 60. At this time, the fracture stress between the first sacrificial layer 72 and the second substrate 60 and the fracture stress of the first sacrificial layer 72 are smaller than the fracture stress between the adhesion film 30 and the replication member 20, the fracture stress of the replication member 20, the fracture stress between the replication member 20 and the second sacrificial layer 73, and the fracture stress of the second sacrificial layer 73. The fracture stress between the first sacrificial layer 72 and the second sacrificial layer 73 may be larger than the fracture stress between the first sacrificial layer 72 and the second substrate 60 and the fracture stress of the first sacrificial layer 72. Therefore, when the first template member 50, the replication member 20, the first sacrificial layer 72, and the second sacrificial layer 73 are peeled off from the second substrate 60, the replication member 20, the first sacrificial layer 72, and the second sacrificial layer 73 are prevented from peeling off from the first template member 50. Furthermore, peeling can occur at the boundary between the first sacrificial layer 72 and the second substrate 60 or at the first sacrificial layer 72 while preventing the replication unit 20 and the second sacrificial layer 73 from breaking. That is, peeling is not limited to the boundary between the first sacrificial layer 72 and the second substrate 60, but may occur within the first sacrificial layer 72 or between the first sacrificial layer 72 and the second sacrificial layer 73. By providing the first sacrificial layer 72, peeling can occur between the second substrate 60 and the first template unit 50, the replication unit 20, the first sacrificial layer 72, and the second sacrificial layer 73 at the boundary between the first sacrificial layer 72 and the second substrate 60. In this case, the load on the replication unit 20 and the second sacrificial layer 73, which have patterned surfaces, during peeling can be further reduced. Furthermore, since the replication material 20' is not hardened in areas other than the area corresponding to the mesa portion 13, the fracture stress of the replication portion 20 in the area corresponding to the mesa portion 13 is greater than the fracture stress of the replication material 20' in areas other than the area corresponding to the mesa portion 13. Therefore, during peeling, the replication portion 20 and the replication material 20' are peeled off from the second substrate 60 at the boundary between the area corresponding to the mesa portion 13 and the other areas.

[0066] 6(E) and 6(F), wet etching is performed to remove the first sacrificial layer 72 and the second sacrificial layer 73 from the template substrate 10, the adhesion film 30, and the replication portion 20. If peeling occurs between the first sacrificial layer 72 and the second sacrificial layer 73, the second sacrificial layer 73 is removed from the template substrate 10, the adhesion film 30, and the replication portion 20 by wet etching.

[0067] In FIG. 6(E), a template 1'B is formed, including a template substrate 10, an adhesion film 30, a replication portion 20, a first sacrificial layer 72, and a second sacrificial layer 73. That is, the first sacrificial layer 72 and the second sacrificial layer 73 are removed from the template 1'B to form the template 1. Comparing the replication portion 20 with the first sacrificial layer 72 and the second sacrificial layer 73, their etching rates with respect to the chemicals used in wet etching are different, with the etching rates of the first sacrificial layer 72 and the second sacrificial layer 73 being higher than that of the replication portion 20. That is, the replication portion 20 is hardly removed by wet etching, and the first sacrificial layer 72 and the second sacrificial layer 73 are mainly removed from the template 1'B. Once the first sacrificial layer 72 and the second sacrificial layer 73 are removed, a template 1 is formed, including the template substrate 10, the adhesion film 30 on the template substrate 10, and the replication portion 20 on the adhesion film 30. On the surface of the replication section 20 opposite to the surface in contact with the adhesive film 30, a pattern surface 21 having a concave-convex pattern that comes into contact with the resist on the workpiece during the imprint process of the semiconductor memory device is provided.

[0068] The method for removing the first sacrificial layer 72 and the second sacrificial layer 73 from the first template member 50 and the replication member 20 may be dry etching instead of wet etching. In the case of dry etching, the etching rate of the sacrificial layer 70 is also higher than the etching rate of the replication member 20. The materials of the first sacrificial layer 72, the second sacrificial layer 73, and the replication member 20 may be selected based on the above conditions.

[0069] In this embodiment, pattern defects can be suppressed as in the first embodiment. In particular, by using the first sacrificial layer 72 and the second sacrificial layer 73 for peeling, the load on the pattern can be further reduced, and the effect of suppressing pattern defects can be further enhanced. Furthermore, the number of sacrificial layers provided between the second substrate 60 and the replication unit 20 is not limited to two, and three or more layers may be provided.

[0070] (Third embodiment) Figure 7 is a diagram schematically showing an example of the configuration of the template 1 in the third embodiment. Figure 7(A) is a top view, and Figure 7(B) is a cross-sectional view taken along the line BB in Figure 7(A). Figure 7(C) is a cross-sectional view schematically showing an example in which a sacrificial layer 70 is formed on the template 1, and Figure 7(D) is a cross-sectional view schematically showing an example in which the sacrificial layer 70 and a second substrate 60 are formed on the template 1.

[0071] The template 1 in the third embodiment is different from the template 1 in the first embodiment in the height of the pattern, that is, the length of the plurality of convex portions formed in the pattern placement region 21A.

[0072] Other configurations of the template 1 in the third embodiment may be the same as those of the template 1 in the first embodiment, and therefore description thereof will be omitted.

[0073] 7 may be the same as the procedures for manufacturing the template 1 in the first and second embodiments. That is, the template 1 in the third embodiment can be manufactured by the manufacturing method shown in FIGS. 2 to 4 or 5 to 6, for example.

[0074] The template 1 in the third embodiment has a pattern surface 21 on the surface opposite to the surface of the replication portion 20 that contacts the adhesive film 30. A pattern placement area 21A on the pattern surface 21 holds patterns, such as devices and wiring, to be formed on the workpiece. At least some of the multiple convex portions formed in the pattern placement area 21A have different lengths, and longer convex portions are more likely to break during peeling than shorter convex portions. The template 1 in the third embodiment is also manufactured by the manufacturing method described in the first and second embodiments. Therefore, the sacrificial layer 70 is removed from the replication portion 20 by wet etching or dry etching, which prevents the convex portions formed in the replication portion 20 from breaking during template manufacturing. In this embodiment, as in the first and second embodiments, pattern defects can be reduced.

[0075] (Fourth embodiment) FIG. 8 is a diagram showing an example of movement, for example, transportation, of the template 1'A or template 1'B described in the first to third embodiments.

[0076] Template 1'A in this embodiment is shown in Figures 1(D) and 4(C) showing the template of the first embodiment, Figure 6(C) showing the template of the second embodiment, and Figure 7(D) showing the template of the third embodiment. Template 1'B in this embodiment is shown in Figures 1(C) and 4(E) showing the template of the first embodiment, Figure 6(E) showing the template of the second embodiment, and Figure 7(C) showing the template of the third embodiment.

[0077] In a certain region 1000, there are manufacturing bases 1100, 1200, 1300, and 1400. The manufacturing bases 1100 to 1400 may belong to the same unit, or may belong to different units. In this embodiment, a unit refers to an independent entity, such as a company, a university, or a research institute. Therefore, if the manufacturing bases 1100 to 1400 belong to the same unit, they may be, for example, different buildings or areas within the same company. Furthermore, if the manufacturing bases 1100 to 1400 belong to different units, they may be, for example, different companies, and may be trading partners.

[0078] The transport device 1500 can accommodate and move the template 1' A or the template 1' B. The transport device 1500 may be a vehicle such as a truck.

[0079] The transport routes 1610 to 1630 (hereinafter sometimes referred to as transport route 1600) are routes that connect the manufacturing bases 1100 to 1400 and are passable by the transport device 1500. The transport route 1600 may be, for example, a road or a railroad.

[0080] An example of transporting template 1'A or template 1'B will be described below.

[0081] First, a template 1'A is manufactured at the manufacturing base 1100.

[0082] Next, the template 1'A is transported from the manufacturing site 1100 to the manufacturing sites 1200 and 1400. For example, a transport device 1500 is used for the transport, and the template 1'A is accommodated in the transport device 1500. The transport device 1500 that accommodates the template 1'A transports the template 1'A to the manufacturing site 1200 or 1400 via a transport path 1610 or a transport path 1630, respectively.

[0083] After the template 1'A is transported, the second substrate 60 is peeled off at the manufacturing bases 1200 and 1400. Thus, the template 1'B is manufactured at the manufacturing bases 1200 and 1400. Furthermore, at the manufacturing site 1400, after peeling off the second substrate 60, the sacrificial layer 70, or the first sacrificial layer 72 and the second sacrificial layer 73, may be removed from the first template unit 50 and the replica unit 20 by etching. Thus, the manufacturing site 1400 may manufacture the template 1 from the template 1'B. The template 1 is shown in, for example, FIGS. 1, 4(F), 6(F), and 7. At the manufacturing site 1400, the template 1 may be used, for example, during an imprint process in the manufacture of a semiconductor device, which will be described later.

[0084] Alternatively, the template 1'B may be transported from the manufacturing site 1200 to the manufacturing site 1300. For example, a transport device 1500 is used for the transport, and the template 1'B is accommodated in the transport device 1500. The transport device 1500 accommodating the template 1'B transports the template 1'B to the manufacturing site 1300 via a transport path 1620. At the manufacturing site 1300, the sacrificial layer 70, or the first sacrificial layer 72 and the second sacrificial layer 73, of the template 1'B may be removed from the first template unit 50 and the replication unit 20 by etching. In other words, the template 1 may be manufactured from the template 1'B at the manufacturing site 1300. The template 1 is shown, for example, in Figures 1, 4(F), 6(F), and 7. At the manufacturing base 1300, the template 1 may be used, for example, during an imprint process in the manufacturing of a semiconductor device, which will be described later.

[0085] During transportation from the manufacturing site 1100 to the manufacturing site 1300 or from the manufacturing site 1100 to the manufacturing site 1400, the transfer device 1500 accommodates the template 1'A or template 1'B. In the template 1'A, the second substrate 60, the sacrificial layer 70, the first sacrificial layer 72, and the second sacrificial layer 73 cover the pattern surface 21 of the replication unit 20. Similarly, in the template 1'B, the sacrificial layer 70, the first sacrificial layer 72, and the second sacrificial layer 73 cover the pattern surface 21 of the replication unit 20. Therefore, the second substrate 60, the sacrificial layer 70, the first sacrificial layer 72, and the second sacrificial layer 73 can protect the pattern formed on the pattern surface 21, and can suppress damage to the pattern formed on the template 1 due to impacts and the like during transportation. In other words, pattern defects in the template 1 caused by transportation can be suppressed.

[0086] (Fifth embodiment) A method for manufacturing a semiconductor device using the template 1 of the first to third embodiments will be described. Fig. 9 is a cross-sectional view schematically showing an example of a procedure for a method for manufacturing a semiconductor device in the fifth embodiment. Fig. 10 is a cross-sectional view schematically showing an example of a procedure for a method for remanufacturing the template 1 in the fifth embodiment.

[0087] 9(A), a workpiece 110 is prepared. The workpiece 110 is, for example, a semiconductor substrate such as a silicon substrate, a semiconductor film formed on a semiconductor substrate, a conductive film, or an insulating film.

[0088] 9(B), a resist 120' is dropped onto the shot region of the workpiece 110. The resist 120' may be, for example, a photocurable resin containing a reactive group that reacts to light. In the case of a photocurable resin, the resist 120 is cured by irradiation with ultraviolet light to form the resist 120 described below. The resist 120' may be dropped onto the workpiece 110 by, for example, an inkjet method, or may be applied to the entire surface of the workpiece 110 by a spin coat method.

[0089] As shown in FIG. 9(C), in the template 1, the replication portion 20 having the pattern surface 21 is placed opposite the workpiece 110, and rough alignment between the template 1 and the workpiece 110 is performed.

[0090] 9(D), at least one of the template 1 and the workpiece 110 is moved until the replication unit 20 comes into contact with the resist 120'. Then, more precise alignment is performed between the template 1 and the workpiece 110. After the recesses in the template 1 are filled with the resist 120', the resist 120' is hardened by irradiating it with ultraviolet light, thereby forming the resist 120. Furthermore, a resist pattern 121 having a plurality of projections and recesses is formed on the resist 120.

[0091] Next, as shown in FIG. 9(E), the template 1 is peeled off from the resist 120.

[0092] 9(F), the workpiece 110 is processed by anisotropic etching such as RIE using the resist pattern 121 as a mask. By repeating such processing, the upper surface of the workpiece 110 can be processed into the desired pattern 111, and a semiconductor device having the pattern 111 is manufactured.

[0093] At this time, if the template 1 is repeatedly pressed against the resist 120' on the workpiece 110, the resist 120' is hardened, and then the resist 120 is peeled off, the pattern on the pattern surface 21 of the replication portion 20 may be damaged, as shown in FIG. 10(A). If an imprint process is performed using a template 1 with a damaged pattern, it may become impossible to form the desired resist pattern 121. In such a case, the template 1 of this embodiment allows the damaged replication portion 20 to be removed. Then, the replication portion 20 can be easily regenerated by forming a new replication portion 20 on the mesa portion 13 of the template substrate 10 via an adhesive film 30.

[0094] First, as shown in FIG. 10(B), the damaged replication portion 20 of the template 1 is peeled off by cleaning. As a cleaning liquid for cleaning, for example, a sulfuric acid / peroxide solution, which is a mixture of sulfuric acid and hydrogen peroxide, can be used, but the cleaning liquid may be changed appropriately depending on the type and material of the resin contained in the replication portion 20. By peeling off the replication portion 20, the first template portion 50 is left with the template substrate 10 and the adhesion film 30, as shown in FIG. 10(C). At this time, the replication portion 20 may be removed by physically peeling it off from the adhesion film 30.

[0095] 10(D), the adhesion film 30 is removed by wet etching or the like. Thereafter, similar to the method for manufacturing the template 1 shown in FIGS. 3 and 4 (first embodiment) and FIGS. 5 and 6 (second embodiment), a new replica portion 20 is formed on the mesa portion 13 of the template substrate 10, thereby regenerating the template 1. The regenerated template 1 is used in a method for manufacturing a semiconductor device as shown in FIG.

[0096] In this embodiment, as in the first to third embodiments, defects in the pattern of the template can be suppressed, and further, defects in the pattern of the semiconductor device manufactured using the template can also be suppressed.

[0097] FIG. 11 is a flowchart showing an example of the procedure of the method for remanufacturing the template 1 according to the fifth embodiment.

[0098] First, an imprint process for a semiconductor device is performed using a template 1 having a replication portion including a pattern surface (S10). Then, after the imprint process, it is determined whether the template 1 is in a state where it can be used again for another imprint process (S20). Specifically, it is checked whether there are any defects or the like in the pattern formed on the replication portion 20 of the template 1.

[0099] If the template is reusable (YES in S20), the imprint process is performed again on the semiconductor device using the template 1 (S10).

[0100] If the template 1 cannot be reused (NO in S20) due to defects in the pattern of the template 1, the damaged replication portion 20 of the template 1 is peeled off by cleaning (S30). At this time, the remaining adhesion film 30 of the template 1 may be removed from the template substrate 10 by wet etching or the like.

[0101] An adhesion film 30 is again formed on the template substrate 10 by vapor deposition or the like. Then, as shown in FIGS. 4A and 6A, a first template unit 50 including the template substrate 10 and the adhesion film 30 is bonded to a second template unit 90 or a third template unit 100 (S40). At this time, the adhesion film 30 of the first template unit 50 and the replication material 20′ of the second template unit 90 or the third template unit 100 are bonded so as to face each other. The replication material 20′ is then cured by ultraviolet light irradiation or heating to form a replication unit 20 (S50). After the replication unit 20 is formed, the second substrate 60 is peeled off from the first template unit 50, the replication unit 20, and the sacrificial layer 70 (first sacrificial layer 72, second sacrificial layer 73) (S60).

[0102] After the second substrate 60 is peeled off, wet etching or dry etching is performed to remove the sacrificial layer 70 (first sacrificial layer 72, second sacrificial layer 73) from the first template portion 50 and the replication portion 20 (S70). At this time, the sacrificial layer 70 (first sacrificial layer 72, second sacrificial layer 73) has a higher etching rate for the material used in the etching than the replication portion 20. Therefore, the sacrificial layer 70 (first sacrificial layer 72, second sacrificial layer 73) can be removed while leaving the replication portion 20, and the template 1 including the template substrate 10, adhesion film 30, and replication portion 20 is reproduced (S80).

[0103] The regenerated template 1 can be used again for the imprint process of a semiconductor device.

[0104] In this embodiment, the imprinting process is performed using a template 1 in which a resin-made replica portion 20 on which a pattern is formed is bonded onto a mesa portion 13 of a template substrate 10. If the replica portion 20 is damaged as a result of repeated imprinting processes, the replica portion 20 is removed and a new replica portion 20 is formed on the mesa portion 13, thereby regenerating the template 1.

[0105] If a template made entirely of quartz glass is damaged, the entire template is discarded, but in this embodiment, the replica portion 20 is discarded and a new replica portion 20 is manufactured and bonded to the template substrate 10 via the adhesive film 30. Therefore, in this embodiment, the template 1 can be manufactured at a lower cost than the manufacturing cost when a template made entirely of quartz glass is used.

[0106] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0107] 1: Template 1´A: Template with sacrificial layer and substrate 1´B: Template with sacrificial layer 10: Template substrate 20:Replication Department 21: Patterned surface 21A: Pattern placement area 21B: Mark placement area 30: Adhesive film 40: First board 50: First template section 60: Second board 70: Sacrificial Layer 70´: Sacrificial material 72: First Sacrificial Layer 72´: First sacrificial material 73: Second Sacrificial Layer 73´: Second sacrificial material 80: Master Template 90: Second template section 100: Third template section 110: Workpiece 111: Pattern 120: Resist 1100, 1200, 1300, 1400: Manufacturing bases 1500:Transportation equipment 1600:Transport route

Claims

1. forming a sacrificial layer on a substrate; forming a first pattern on a surface of the sacrificial layer opposite to a surface in contact with the substrate; forming a layer of replication material on the first patterned surface of the sacrificial layer; a surface of the replication material layer opposite to the surface in contact with the sacrificial layer and a template substrate are bonded via an adhesive film; hardening the layer of replication material to form a replication portion having a second pattern corresponding to the first pattern; peeling the substrate and the sacrificial layer; A method for manufacturing a template with a sacrificial layer.

2. removing the sacrificial layer from the sacrificial layer-attached template to form a template; The template is used in an imprint process. The method for manufacturing the template with a sacrificial layer according to claim 1 .

3. The method for removing the sacrificial layer is to use wet etching or dry etching. The method for manufacturing the template with a sacrificial layer according to claim 1 .

4. The material of the sacrificial layer is a resin that hardens in response to ultraviolet light or heat. The method for manufacturing a template with a sacrificial layer according to claim 3 .

5. a template substrate; an adhesion film provided on the template substrate; a replication portion provided on the adhesive film and having a first pattern; a sacrificial layer disposed on the replication portion and having a second pattern corresponding to the first pattern of the replication portion; A sacrificial layer-attached template comprising:

6. The sacrificial layer can be removed from the sacrificial layer-attached template to form a template to be used in an imprint process. The template with a sacrificial layer according to claim 5 .

7. The method for removing the sacrificial layer is by wet etching or dry etching. The template with a sacrificial layer according to claim 5 .

8. The material of the sacrificial layer is a resin that hardens in response to ultraviolet light or heat. The template with a sacrificial layer according to claim 7 .

9. a substrate disposed on the sacrificial layer, peeling the substrate from the sacrificial layer before being used in an imprint process; The template with a sacrificial layer according to claim 5 .

10. preparing a template having a template substrate, an adhesive film provided on the template substrate, and a replication portion provided on the adhesive film and having a first pattern in which damage has occurred; removing the replica portion having the first pattern where the damage occurred, while leaving the template substrate; forming a sacrificial layer on a substrate; forming a second pattern on a surface of the sacrificial layer opposite to a surface in contact with the substrate; forming a layer of replication material on the second pattern of the sacrificial layer; bonding a surface of the replication material layer opposite to the surface in contact with the sacrificial layer to the template substrate; curing the layer of replication material to form a replication portion having a third pattern corresponding to the second pattern; peeling the substrate and the sacrificial layer; A method for remanufacturing a template with a sacrificial layer.

11. removing the sacrificial layer from the sacrificial layer-attached template to form a template; The template is used in an imprint process. The method for remanufacturing the template with a sacrificial layer according to claim 10 .

12. The method for removing the sacrificial layer is by wet etching or dry etching. The method for remanufacturing the template with a sacrificial layer according to claim 10 .

13. The material of the sacrificial layer is a resin that hardens in response to ultraviolet light or heat. The method for remanufacturing the template with a sacrificial layer according to claim 12 .

14. providing a template including a template substrate, a replication portion provided on the template substrate and having a first pattern, and a sacrificial layer provided on the replication portion and having a second pattern corresponding to the first pattern of the replication portion; removing the sacrificial layer from the template; forming a resist layer on a semiconductor substrate; the template and the semiconductor substrate are pressed together so that the surface of the semiconductor substrate on which the resist layer is formed faces the replication portion of the template; hardening the resist layer; peeling the template from the resist layer; A method for manufacturing a semiconductor device.

15. The method for removing the sacrificial layer is to use wet etching or dry etching. The method for manufacturing a semiconductor device according to claim 14.

16. The material of the sacrificial layer is a resin that hardens in response to ultraviolet light or heat. The method for manufacturing a semiconductor device according to claim 15.

Images