Metal oxide sintered body for thermistor, thermistor element, and method for manufacturing metal oxide sintered body for thermistor

JP2025146802APending Publication Date: 2025-10-03MITSUBISHI MATERIALS CORP
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Patent Information

Application Number
JP2025046418
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-03-22
Filing Date
2025-03-21
Publication Date
2025-10-03

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Benefits of technology

【0017】 本発明によれば、以下の効果を奏する。 すなわち、本発明に係るサーミスタ用金属酸化物焼結体及びそのサーミスタ用金属酸化物焼結体の製造方法によれば、一般式:(1-z)(Ma1-yMby)(Cr1-xMnx)O3+zY2O3(但し、Maは、Yよりもイオン半径が大きい3価の金属元素の少なくとも1種類以上を示す。また、Mbは、Mg,Ca,Sr及びBaの少なくとも1種類以上を示す。0.0≦x≦1.0、0.0

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Abstract

To suppress resistance value changes during formic acid reflow mounting by employing a protective layer other than a Y2O3 layer in a metal oxide sintered body for thermistors, thermistor elements, and a method for manufacturing the metal oxide sintered body for thermistors, thereby minimizing resistance value changes due to reduction even at high temperatures.SOLUTION: A metal oxide sintered body 1 for thermistors has the composition given by the general formula (1-z)(Ma1-yMby)(Cr1-xMnx)O3+zY2O3 (where 0.0≤x≤1.0, 0.0<y<0.5, and 0<z≤0.8); and Ma denotes at least one trivalent metal element having an ion radius larger than that of Y, and Mb represents at least one of Mg, Ca, Sr, and Ba). A (Ma,Y) oxide layer 3 is formed on the surface of the composite oxide sintered body portion 2.SELECTED DRAWING: Figure 1
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Claims

1. A metal oxide sintered body used in a thermistor, General formula: (1-z) (Ma 1-y Mb y ) (Cr 1-x Mn x ) O 3 +zY 2 O 3 (wherein Ma represents at least one trivalent metal element having an ionic radius larger than that of Y, and Mb represents at least one of Mg, Ca, Sr, and Ba; 0.0≦x≦1.0, 0.0<y<0.5, 0<z≦0.8), wherein a (Ma, Y) oxide layer is formed on the surface of a complex oxide sintered body part represented by the formula:

2. The metal oxide sintered body for thermistors according to claim 1, A metal oxide sintered body for thermistors, characterized in that the (Ma, Y) oxide layer has a thickness of 3.8 μm or more.

3. 3. A thermistor element comprising: the metal oxide sintered body for thermistors according to claim 1; and a pair of electrodes formed spaced apart on the surface of the metal oxide sintered body for thermistors.

4. 3. A method for producing the metal oxide sintered body for thermistors according to claim 1 or 2, comprising: The raw material powders are mixed and fired to obtain a compound having the general formula: (1-z)(Ma 1-y Mb y ) (Cr 1-x Mn x ) O 3 +zY 2 O 3 (wherein Ma represents at least one trivalent metal element having an ionic radius larger than that of Y, and Mb represents at least one of Mg, Ca, Sr, and Ba; 0.0≦x≦1.0, 0.0<y<0.5, 0<z≦0.8), In the firing step, the raw material powder is a mixture of a Ma compound, an Mb compound, a Cr compound, a Mn compound, and a Y compound. 2 O 3 and Y are mixed together, pulverized, and then molded to prepare a molded body, which is then fired in the air or in an atmosphere with an oxygen partial pressure of 20% or more, and cooled to room temperature after firing, thereby forming a (Ma, Y) oxide layer on the surface of the complex oxide sintered body.

5. 5. The method for producing a metal oxide sintered body for a thermistor according to claim 4, a (Ma, Y) oxide layer formed on the surface of the complex oxide sintered body, the method for producing a metal oxide sintered body for thermistors, characterized in that in the firing step, the firing is performed in air or in an atmosphere with an oxygen partial pressure of 20% or more at a firing temperature of 1450°C or more, for a firing time of 5 hours or more, and for cooling to room temperature after firing for 6 hours or more.

Citation Information

Patent Citations

  • High frequency heating device

    JP1979002553A

  • Thermistor element and manufacturing method thereof

    JP3362651B2

  • thermistor element

    JP3776691B2