Imaging device and element transfer device

Abstract

To provide an imaging device capable of capturing high accuracy images even in a narrow space, and an element transfer device equipped with the imaging device.SOLUTION: An imaging unit 60 included in a semiconductor chip transfer device 100 comprises: an infinity correction optical unit 60a including an objective lens 61a and an image-forming lens 63a which incident light Li having entered from the objective lens 61a enters in parallel; an imaging element 64a for capturing the image of incidence light Li having entered via the image-forming lens 63a; and a mirror 62a located between the objective lens 61a and the image-forming lens 63a, for causing incidence light Li having entered from the objective lens 61a to enter the image-forming lens 63a after having had its direction changed.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to an imaging device and an element transfer device, and more particularly to an imaging device for imaging an element, and an element transfer device including an imaging device for imaging an element. [Background technology]

[0002] BACKGROUND ART Conventionally, an imaging device for capturing an image of an element, and an element transfer device including an imaging device for capturing an image of an element are known (see, for example, Patent Document 1).

[0003] The above-mentioned Patent Document 1 discloses a transfer device that irradiates elements formed on a transfer substrate with laser light from a laser light irradiation unit to transfer the elements to a transfer substrate. The transfer device of Patent Document 1 also includes a galvanometer scanner and a telecentric lens that adjust the irradiation position of the laser light so that the laser light irradiates the elements formed on the transfer substrate. The transfer device of Patent Document 1 also includes an element measurement camera that captures images used to measure the element positions for transfer to target positions on the transfer substrate. This element measurement camera is positioned below the laser light irradiation unit and above a transfer substrate stage including a transfer substrate holding unit. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2021-150614 Summary of the Invention [Problem to be solved by the invention]

[0005] As described above, the element measurement camera in Patent Document 1 is disposed below the laser beam irradiation unit and above the transfer substrate stage including the transfer substrate holder. Here, in the transfer device, high-precision images are required to enable accurate measurement of the element positions. Therefore, it is conceivable to shorten the work distance, which is the distance between the objective lens of the camera (imaging device) and the image target (workpiece), when capturing images. In this case, it is conceivable to place the imaging device in a narrow space, such as between the telecentric lens of the laser beam irradiation unit and the transfer substrate stage. However, in an imaging device designed with a linear optical path, the objective lens and the main body including the imaging element are linearly arranged, and a distance from the objective lens must be secured according to the focal length. This requires a large installation space, and it may not be possible to place the imaging device in such a narrow space. Furthermore, if a mirror is provided external to the imaging device to bend the optical path in order to install the imaging device in a narrow space, it is necessary to secure a distance from the objective lens to the mirror. This increases the work distance, which may prevent high-precision images from being captured. For this reason, there has been a demand for an imaging device that can capture high-precision images even in a small space, and for an element transfer device that includes the imaging device.

[0006] The present invention has been made to solve the above-mentioned problems, and one object of the present invention is to provide an imaging device that is capable of capturing high-precision images even in a narrow space, and an element transfer device equipped with the imaging device. [Means for solving the problem]

[0007] In order to achieve the above object, an imaging device according to a first aspect of the present invention includes an infinity-corrected optical unit including an objective lens and an imaging lens into which light incident from the objective lens is incident in parallel, an imaging element that images the light incident through the imaging lens, and a mirror that is provided between the objective lens and the imaging lens and changes the direction of the light incident from the objective lens so that it is incident on the imaging lens.

[0008] As described above, the imaging device according to this first aspect includes an infinity-corrected optical unit including an objective lens and an imaging lens through which light incident from the objective lens is incident parallel, and a mirror disposed between the objective lens and the imaging lens to redirect the light incident from the objective lens and cause it to enter the imaging lens. This allows the use of an infinity-corrected optical unit that can arbitrarily set the distance between the objective lens and the imaging lens, thereby enabling a mirror to be disposed between the objective lens and the imaging lens and inside the imaging device without affecting the working distance, thereby realizing an imaging device with a curved optical path. In this case, the height of the imaging device can be reduced compared to imaging devices designed with a linear optical path. Furthermore, the working distance can be prevented from becoming long, allowing for high-precision images to be captured. Furthermore, the use of an infinity-corrected optical system prevents aberrations and image distortions even when the optical path is bent by the mirror, enabling higher-precision images to be captured. As a result, high-precision images can be captured even in a small space.

[0009] The imaging device according to the first aspect preferably further includes a light irradiation unit that irradiates light toward the objective lens, and the mirror is configured to transmit the light irradiated from the light irradiation unit and change the direction of the light incident from the objective lens. With this configuration, the imaging device can acquire an image by using the mirror described above, even in a narrow space where light is difficult to enter, while irradiating the object with light using the light irradiation unit. As a result, it becomes possible to acquire a clearer image.

[0010] An element transfer device according to a second aspect of the present invention comprises a laser light irradiation unit that irradiates laser light onto a support substrate from the side opposite to the surface of the support substrate that supports elements, a stage that supports a transfer substrate onto which the elements are transferred, and an imaging unit that is provided between the laser light irradiation unit and the stage and captures an adjustment image used to adjust the transfer position of the elements, wherein the imaging unit includes an infinity correction optical unit that includes an objective lens and an imaging lens through which light incident from the objective lens is incident in parallel, and a mirror that is provided between the objective lens and the imaging lens and changes the direction of the light incident from the objective lens so that it enters the imaging lens.

[0011] In the element transfer device according to the second aspect, as described above, the imaging unit includes an infinity-corrected optical unit including an objective lens and an imaging lens through which light incident from the objective lens is incident parallel, and a mirror disposed between the objective lens and the imaging lens to redirect the light incident from the objective lens and cause it to enter the imaging lens. This allows the imaging unit to use an infinity-corrected optical unit that can arbitrarily set the distance between the objective lens and the imaging lens. This allows a mirror to be disposed between the objective lens and the imaging lens and within the imaging device without affecting the working distance, thereby realizing an imaging device with a curved optical path. In this case, the height of the imaging unit can be reduced compared to an imaging unit designed with a linear optical path. Furthermore, the working distance can be prevented from becoming long, allowing for high-precision images to be captured. Furthermore, the use of an infinity-corrected optical system prevents aberrations and image distortions even when the optical path is bent by the mirror, thereby providing an element transfer device capable of capturing higher-precision images.

[0012] The element transfer device according to the second aspect preferably further includes a scanning mirror and a condenser lens for changing the irradiation position of the laser light emitted from the laser light irradiation unit, and the image capture unit is disposed in a space where the condenser lens and the stage face each other during image capture. With this configuration, even in a transfer device that scans the laser light emitted from the laser light irradiation unit using a galvano optical system including a scanning mirror and a condenser lens, image capture can be performed with the image capture unit disposed in a smaller space.

[0013] The element transfer device according to the second aspect preferably further includes a movement mechanism that moves the image capture unit to a space where the condenser lens and the stage face each other or to a position away from the space where the condenser lens and the stage face each other. This configuration makes it possible to capture an image of an object on the stage by moving only the position of the image capture unit without changing the positional relationship between the condenser lens and the stage that has been set once. As a result, it is possible to prevent deviation of the laser irradiation position on the object due to changing the positional relationship between the condenser lens and the stage after capturing the image.

[0014] In this case, preferably, the moving mechanism moves the image capturing unit to a position away from the space where the condenser lens and the stage face each other when the laser light emitting unit is emitting laser light, and moves the image capturing unit to the space where the condenser lens and the stage face each other when photographing when the laser light emitting unit is not emitting laser light. With this configuration, it is possible to prevent the image capturing unit from blocking the laser light when emitting laser light to transfer the element.

[0015] In the element transfer device according to the second aspect, the imaging unit preferably further includes a light irradiation unit that irradiates light toward the objective lens, and the mirror included in the imaging unit is configured to transmit the light irradiated from the light irradiation unit and change the direction of the light incident from the objective lens. With this configuration, the imaging unit can acquire an image by using the mirror described above, even in a narrow space where light is difficult to enter, while irradiating the image target with light from the light irradiation unit. As a result, it is possible to acquire a clearer image.

[0016] In the element transfer device according to the second aspect, the light irradiation unit is preferably arranged outside the housing of the imaging unit that houses the mirror, on the side opposite to the side where the objective lens is arranged with respect to the mirror. With this configuration, since the light irradiation unit is arranged outside, only the components essential for the infinity correction optical unit can be provided inside the housing. As a result, an element transfer device with a compact imaging unit is provided.

[0017] In the element transfer device according to the second aspect, the imaging unit is preferably arranged so that the distance from the objective lens to the object to be imaged is shorter than the distance from the objective lens to the condenser lens. With this configuration, the imaging unit can be brought closer to the object to be imaged (the working distance can be shortened), making it possible to acquire an image with higher accuracy. [Effects of the Invention]

[0018] According to the present invention, as described above, it is possible to provide an imaging device capable of capturing high-precision images even in a narrow space, and an element transfer device including the imaging device. [Brief explanation of the drawings]

[0019] [Figure 1] 1 is a perspective view showing the overall configuration of a semiconductor chip transfer device according to an embodiment; [Figure 2] 1A and 1B are diagrams illustrating a semiconductor chip and a support substrate according to an embodiment. [Figure 3] FIG. 2 is a diagram illustrating a configuration of an imaging unit according to an embodiment. [Figure 4] 10 is a perspective view for explaining a case where an image of a semiconductor chip is captured by an imaging unit in the semiconductor chip transfer apparatus according to the embodiment; FIG. [Figure 5] FIG. 2 is a plan view illustrating the arrangement of an imaging unit according to an embodiment. [Figure 6] FIG. 10 is a diagram illustrating a configuration of an imaging unit according to a modified example of an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will now be described with reference to the accompanying drawings.

[0021] The configuration of a semiconductor chip transfer apparatus 100 according to one embodiment of the present invention will be described with reference to Figures 1 and 2. The semiconductor chip transfer apparatus 100 is an example of the "element transfer apparatus" in the claims.

[0022] (Configuration of semiconductor chip transfer device) 1, a semiconductor chip transfer device 100 is configured to transfer a semiconductor chip 1 arranged on a support substrate 10 to a transfer substrate 20 by a laser lift-off method. The semiconductor chip 1 is an example of an "element" in the claims.

[0023] The semiconductor chip transfer apparatus 100 includes a support substrate holder 30, a stage 40, a moving mechanism 50, a moving mechanism 51, an imaging unit 60, a laser light irradiation unit 70, and a control unit 80. In the drawings, the left-right direction of the semiconductor chip transfer apparatus 100 (one direction in a horizontal plane) is defined as the X direction. The up-down direction (vertical direction) of the semiconductor chip transfer apparatus 100 is defined as the Z direction. The upward direction is defined as the Z1 direction, and the downward direction is defined as the Z2 direction. The direction perpendicular to the X and Z directions of the semiconductor chip transfer apparatus 100 (the other direction in a horizontal plane) is defined as the Y direction.

[0024] As shown in FIG. 2, a plurality of semiconductor chips 1 are arranged in a matrix (rows and columns) at predetermined intervals on a support substrate 10. The support substrate 10 has a circular shape. The semiconductor chips 1 are, for example, thin elements such as InP chips that are rectangular with sides measuring several tens of micrometers to several millimeters and have a thickness of approximately several hundred nanometers. The support substrate 10 is formed of a material that transmits laser light L, such as an SiO2 (silicon dioxide) substrate or a sapphire substrate. The semiconductor chips 1 are arranged on the support substrate 10 via an adhesive layer (not shown) formed on the surface of the support substrate 10. The adhesive layer is formed of a material that decomposes to generate gas components when irradiated with laser light L from a laser light irradiation unit 70, and is capable of supporting the semiconductor chips 1. The adhesive layer may be made of, for example, polyimide or silicon.

[0025] As shown in FIG. 1, the support substrate holding unit 30 holds the support substrate 10 on which the semiconductor chip 1 is arranged. The support substrate holding unit 30 holds the support substrate 10 on which the semiconductor chip 1 is arranged, with the surface on which the semiconductor chip 1 is arranged facing downward (Z2 direction). The support substrate holding unit 30 has an opening 31. The support substrate 10 held by the support substrate holding unit 30 is irradiated with laser light L from a laser light irradiation unit 70 through the opening 31. The support substrate holding unit 30 is configured to be movable relative to the stage 40 in at least the X and Y directions by a movement mechanism 50.

[0026] The transfer substrate 20 is a substrate onto which a large number of semiconductor chips 1 arranged on a support substrate 10 are transferred, for example, in order to manufacture a semiconductor device. The transfer substrate 20 has a rectangular shape. An adhesive layer (catch layer) (not shown) for adhering the transferred semiconductor chips 1 is formed on the transfer substrate 20. Wiring that can be electrically connected to the transferred semiconductor chips 1 is also formed on the transfer substrate 20.

[0027] The stage 40 holds, from below (Z2 side), the transfer substrate 20 onto which the semiconductor chip 1 arranged on the support substrate 10 is to be transferred. The stage 40 is configured to be movable relative to the support substrate holding unit 30 at least in the X and Y directions by a movement mechanism 50, which is, for example, an actuator. By performing one or both of the movement of the support substrate holding unit 30 by the movement mechanism 50 and the movement of the stage 40, the relative positions of the semiconductor chip 1 arranged on the support substrate 10 and the transfer substrate 20 are adjusted.

[0028] The imaging unit 60 is a so-called digital camera that captures an image of the semiconductor chip 1 supported on the support substrate 10. The imaging unit 60 is capable of capturing an image of the semiconductor chip 1 at a magnification of several to several tens of times. The imaging unit 60 is configured to be movable relative to the stage 40 and the position where the fθ lens 73 (described later) is disposed at least in the X and Y directions by a moving mechanism 51, which is an actuator, for example. The imaging unit 60 is an example of an "imaging device" in the claims. The detailed configuration of the imaging unit 60 will be described later.

[0029] As shown in FIG. 1, the laser light irradiation unit 70 is configured to irradiate laser light L toward the support substrate 10. The laser light irradiation unit 70 includes a laser light source 71, a galvanometer mirror 72, and an fθ lens 73. The laser light source 71 is a light source that emits laser light L. The laser light source 71 is controlled by a control unit 80 to intermittently emit the laser light L so that the irradiation time intervals are uniform. The galvanometer mirror 72 is an example of a "scanning mirror" in the claims, and the fθ lens 73 is an example of a "condensing lens" in the claims.

[0030] The galvanometer mirror 72 is composed of two mirrors, each of which can rotate independently about two intersecting axes and reflects the laser light L at any angle. The fθ lens 73 focuses the laser light L from the galvanometer mirror 72 onto the transfer area of ​​the support substrate 10. As a result, the size of the transfer area arranged within the support substrate 10 falls within the irradiation range of the reflected laser light L within the rotation range of the galvanometer mirror 72. The laser light irradiation unit 70 also includes a galvanometer motor (not shown), and is configured so that the movement speed of the laser light L in the X and Y directions can be changed by changing the output of the galvanometer motor using the control unit 80.

[0031] Furthermore, the laser light irradiation unit 70 irradiates the support substrate 10 held by the support substrate holding unit 30 with laser light L from the surface opposite to the surface supporting the semiconductor chip 1, via the galvanometer mirror 72 and the fθ lens 73. The laser light L is irradiated by the galvanometer mirror 72 and the fθ lens 73 onto an adhesive layer (not shown) in the transfer area that corresponds to the selected semiconductor chip 1. This causes the semiconductor chip 1 to be peeled off from the support substrate 10, and the semiconductor chip 1 is transferred from the support substrate 10 to the transfer substrate 20. That is, transfer is performed by the laser lift-off method.

[0032] The control unit 80 includes, for example, a central processing unit (CPU), read-only memory (ROM), random access memory (RAM), and graphics processing unit (GPU) as processors, and performs various controls by executing programs (software). The control unit 80 arbitrarily selects a semiconductor chip 1 in the transfer area and controls the laser light irradiator 70 to irradiate the selected semiconductor chip 1 with laser light L, thereby transferring the selected semiconductor chip 1 to the transfer substrate 20. The control unit 80 also controls the operations of the moving mechanisms 50 and 51 and the imaging operation of the imaging unit 60. The control unit 80 is also configured to derive the positional relationship between each of the multiple semiconductor chips 1 based on an image (adjustment image) of the semiconductor chip 1 captured by the imaging unit 60, and to perform control such as adjusting the irradiation position of the laser light L irradiated by the laser light irradiator 70 or the transfer position of the semiconductor chip 1.

[0033] (Configuration of the imaging unit) Here, the detailed configuration of the imaging unit 60 will be described with reference to FIGS. 3 to 5. As shown in FIG. 3, the imaging unit 60 includes a lens unit 61 including an objective lens 61a therein, a first housing 62 including a half mirror 62a therein, a second housing 63 including an imaging lens 63a therein, a main body 64 including an imaging element 64a therein, and a light irradiation unit 65. The combination of the lens unit 61 and the second housing 63 is referred to as an infinity correction optical unit 60a. The half mirror 62a is an example of the "mirror" in the claims. The detailed configuration of the imaging unit 60 will be described later.

[0034] The lens unit 61 includes an objective lens 61a therein and is brought close to the support substrate 10 and semiconductor chip 1, which are the imaging targets. The objective lens 61a is configured to acquire light from the imaging target as incident light Li and collimate the incident light Li together with the imaging lens 63a. When the objective lens condenses light to generate an intermediate image, the distance from the objective lens 61a to the imaging element 64a is a fixed value depending on the objective lens used. On the other hand, in this embodiment, the objective lens 61a does not generate an intermediate image without condensing the incident light Li by itself. This allows the distance from the objective lens 61a to the imaging element 64a to be freely set, thereby increasing the degree of freedom in the internal layout of the imaging unit 60. Therefore, as described below, a half mirror 62a and the like are provided inside the imaging unit 60.

[0035] The distance d1 from the objective lens 61a to the support substrate 10, which is the image target, is also called the working distance, and is the distance d1 at which the image acquired using the imaging unit 60 is in focus. The lens unit 61 is positioned close to the support substrate 10 and semiconductor chip 1, which are the image targets, so that the distance d1 is smaller than the distance d2 from the objective lens 61a to the Z2-direction surface of the fθ lens 73. The distance d1 as the working distance is a specific value that differs depending on the type (product number) of the objective lens 61a, and generally, a smaller value results in a more accurate image.

[0036] The first housing 62 is a housing that includes a half mirror 62a therein and to which the light irradiation unit 65 is attached in the Z1 direction. The half mirror 62a is configured to transmit the irradiation light Lv that is irradiated by the light irradiation unit 65 arranged in the Z1 direction, and to reflect the incident light Li that is incident as a parallel beam after passing through the objective lens 61a arranged in the Z2 direction so as to change the traveling direction by 90 degrees to the X1 direction.

[0037] The second housing 63 is a cylindrical housing that includes an imaging lens 63a therein, and is a so-called lens barrel portion. Inside the second housing 63, incident light Li, which is reflected by the half mirror 62a and enters as a parallel beam, travels in the X1 direction. The imaging lens 63a housed inside the second housing 63 is configured to focus the incident light Li, which has entered as a parallel beam, to generate an intermediate image.

[0038] The main body 64 is configured to acquire an image of the semiconductor chip 1 based on light received by an imaging element 64a contained therein. The main body 64 includes a display unit and an operation unit (not shown). The main body 64 is also configured to be able to communicate with other electronic devices, and transmits the acquired image to the control unit 80. A so-called CCD (Charge-Coupled Device) is used as the imaging element 64a, and images with different brightness or color are generated according to the intensity of the received light.

[0039] The light irradiation unit 65 is a visible light source attached to the first housing unit 62, and is configured to be controlled by the control unit 80 to continuously irradiate visible light in the Z2 direction when the imaging unit 60 images the semiconductor chip 1.

[0040] (Operation of the imaging unit) As shown in FIG. 1, when the laser light irradiation unit 70 is irradiating the semiconductor chip 1 with laser light L, the imaging unit 60 is moved by the moving mechanism 51 so as to retreat from the space where the fθ lens 73 and the stage 40, which will be described later, face each other.

[0041] 4, when the laser light L is not being irradiated, the imaging unit 60 is moved by the moving mechanism 51 so as to be disposed in a space where the fθ lens 73 and the stage 40 face each other. This allows the imaging unit 60 to be disposed in a space where the fθ lens 73 and the stage 40 face each other, with the relative positions of the fθ lens 73 and the support substrate 10 predetermined for irradiating the semiconductor chip 1 with the laser light L. At this time, as shown in FIG. 5, the imaging unit 60 is disposed in the Z1 direction with respect to the support substrate 10 that supports the semiconductor chip 1, so that the imaging unit 60 can image the position of the semiconductor chip 1 that is visible through the support substrate 10 at the position where the laser light L is actually transferred to the semiconductor chip 1.

[0042] (Effects of the embodiment) Next, the effects of the embodiment will be described.

[0043] As described above, the imaging unit 60 serving as an imaging device according to this embodiment includes an infinity correction optical unit 60a including an objective lens 61a and an imaging lens 63a onto which incident light Li from the objective lens 61a is incident in a parallel manner, and a half mirror 62a disposed between the objective lens 61a and the imaging lens 63a to change the direction of the incident light Li from the objective lens 61a and cause it to enter the imaging lens 63a. This allows the use of an infinity correction optical unit 60a that can arbitrarily set the distance between the objective lens 61a and the imaging lens 63a. This allows the half mirror 62a to be disposed between the objective lens 61a and the imaging lens 63a and within the imaging unit 60 without affecting the working distance d1, thereby realizing an imaging unit 60 with a curved optical path. In this case, the height of the imaging unit 60 in the Z direction can be reduced compared to an imaging device designed with a linear optical path. Furthermore, the working distance d1 can be prevented from becoming too long, enabling high-precision images to be captured. Furthermore, by using the infinity correction optical unit 60a, even when the optical path is bent by the half mirror 62a, no aberration or image distortion occurs, making it possible to capture images with higher precision, even in a small space.

[0044] Furthermore, in this embodiment, as described above, the semiconductor chip transfer apparatus 100 further includes a galvanometer mirror 72 and an fθ lens 73 for changing the irradiation position of the laser light L emitted from the laser light irradiation unit 70, and the imaging unit 60 is disposed in a space where the fθ lens 73 and the stage 40 face each other during imaging. As a result, even in the semiconductor chip transfer apparatus 100 in which the laser light L emitted from the laser light source 71 of the laser light irradiation unit 70 is scanned by a galvanometer optical system including the galvanometer mirror 72 and the fθ lens 73, imaging can be performed with the imaging unit 60 disposed in a narrower space.

[0045] Furthermore, as described above, this embodiment further includes a moving mechanism 51 that moves the imaging unit 60 to a space where the fθ lens 73 and the stage 40 face each other, or to a position away from the space where the fθ lens 73 and the stage 40 face each other. This makes it possible to image the semiconductor chip 1, which is the object to be imaged on the stage 40, by moving only the position of the imaging unit 60 without changing the positional relationship between the fθ lens 73 and the stage 40 that has been set once. As a result, it is possible to suppress deviation of the irradiation position of the laser light L on the semiconductor chip 1, which is the object to be imaged, caused by changing the positional relationship between the fθ lens 73 and the stage 40 after image capture.

[0046] Furthermore, in this embodiment, as described above, the moving mechanism 51 moves the imaging unit 60 to a position away from the space where the fθ lens 73 and the stage 40 face each other when the laser light L is being emitted from the laser light emitting unit 70, and moves the imaging unit 60 to the space where the fθ lens 73 and the stage 40 face each other when photographing when the laser light L is not being emitted from the laser light emitting unit 70. This makes it possible to prevent the imaging unit 60 from blocking the laser light L when the laser light L is being emitted to transfer the semiconductor chip 1.

[0047] Furthermore, in this embodiment, as described above, the imaging unit 60 further includes a light irradiation unit 65 that irradiates light toward the objective lens 61a, and the half mirror 62a is configured to transmit the irradiation light Lv irradiated from the light irradiation unit 65 and change the direction of the incident light Li incident from the objective lens 61a. Thus, by using the half mirror 62a as described above, the imaging unit 60 can acquire an image even in a narrow space where light is difficult to enter, while irradiating the semiconductor chip 1, which is the image target, with light from the light irradiation unit 65. As a result, it is possible to acquire a clearer image.

[0048] Furthermore, in this embodiment, as described above, the light irradiation unit 65 is arranged outside the first housing 62 of the imaging unit 60 that houses the half mirror 62a, in the Z1 direction on the opposite side of the half mirror 62a from the side on which the objective lens 61a is arranged. As a result, since the light irradiation unit 65 is arranged externally, only the components essential for the infinity correction optical unit 60a can be provided inside the lens unit 61, the first housing 62, and the second housing 63. As a result, a semiconductor chip transfer device 100 equipped with a compact imaging unit 60 is provided.

[0049] Furthermore, in this embodiment, as described above, the imaging unit 60 is disposed so that the distance d1 from the objective lens 61a to the support substrate 10, which is the object to be imaged, is smaller than the distance d2 from the objective lens 61a to the fθ lens 73. This allows the imaging unit 60 to be brought closer to the semiconductor chip 1, which is the object to be imaged (reducing the distance d1, which is the working distance), thereby enabling a more accurate image to be acquired.

[0050] [Variations] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of the present invention is defined by the claims rather than the above description of the embodiments, and further includes all modifications (variations) within the meaning and scope of the claims.

[0051] For example, in the above embodiment, the semiconductor chip transfer apparatus 100 includes the galvanometer mirror 72 and the fθ lens 73 for changing the irradiation position of the laser light L emitted from the laser light irradiation unit 70, and the imaging unit 60 is disposed in a space where the fθ lens 73 and the stage 40 face each other during imaging. However, the present invention is not limited to this. In the present invention, for example, in a case where the laser light irradiation unit 70 does not include the galvanometer mirror 72 and the fθ lens 73 and irradiates the laser light L at a fixed position and the irradiation position of the laser light L on the semiconductor chip 1 is adjusted by the stage 40, the imaging unit 60 may be disposed in the space between the laser light irradiation unit 70 and the stage 40. Furthermore, even when the laser light irradiation unit 70 includes the galvanometer mirror 72 and the fθ lens 73, the imaging unit 60 may be disposed in the space between the galvanometer mirror 72 and the stage 40, for example, with the fθ lens 73 retracted.

[0052] In the above embodiment, an example was shown in which the moving mechanism 51 was provided to move the imaging unit 60 to a space where the fθ lens 73 and the stage 40 face each other or to a position away from the space where the fθ lens 73 and the stage 40 face each other, but the present invention is not limited to this. In the present invention, the relative positions of the imaging unit 60 and the stage 40 may be adjusted using only the moving mechanism 50 that moves the stage 40.

[0053] Furthermore, in the above embodiment, an example has been shown in which the moving mechanism 51 moves the imaging unit 60 to a position away from the space where the fθ lens 73 and the stage 40 face each other when the laser light L is being irradiated from the laser light irradiating unit 70, and moves the imaging unit 60 to the space where the fθ lens 73 and the stage 40 face each other when photographing without the laser light L being irradiated from the laser light irradiating unit 70, but the present invention is not limited to this. In the present invention, even when the laser light L is being irradiated, if the semiconductor chip 1 is transferred at a position where the laser light L irradiated by the laser light irradiating unit 70 does not hit the imaging unit 60, the imaging unit 60 may be disposed in the space where the fθ lens 73 and the stage 40 face each other.

[0054] Furthermore, in the above embodiment, an example was shown in which the imaging unit 60 includes a light irradiation unit 65 that irradiates light toward the objective lens 61a, and the half mirror 62a is configured to transmit the irradiation light Lv irradiated from the light irradiation unit 65 and change the direction of the incident light Li incident from the objective lens 61a, but the present invention is not limited to this. In the present invention, for example, if the imaging environment is sufficiently bright and a clear image can be captured without irradiating the semiconductor chip 1, which is the imaging target, with the irradiation light Lv, the light irradiation unit 65 may not be provided. In this case, a normal mirror capable of reflecting the incident light Li may be used as the half mirror 62a.

[0055] In the above embodiment, the light irradiator 65 is disposed outside the first housing 62 of the image capture unit 60, in the Z1 direction opposite the side where the objective lens 61a is disposed relative to the half mirror 62a. However, the present invention is not limited to this. In the present invention, for example, the light irradiator 65 may be disposed inside the first housing 62. Furthermore, for example, as shown in a modified example in FIG. 6, the image capture unit 160 may have the light irradiator 165 disposed in the X2 direction opposite the side where the imaging lens 63a is disposed relative to the half mirror 62a. In this case, a mirror 62b may be disposed inside the first housing 162 to reflect the irradiated light Lv emitted from the light irradiator 165 toward the semiconductor chip 1 disposed in the Z2 direction. This configuration allows the height of the image capture unit 160 in the Z direction to be further reduced.

[0056] Furthermore, in the above embodiment, the imaging unit 60 is disposed so that the distance d1 from the objective lens 61a to the support substrate 10, which is the object to be imaged, is smaller than the distance d2 from the objective lens 61a to the fθ lens 73, but the present invention is not limited to this. In the present invention, for example, when imaging the semiconductor chip 1 at low magnification, if the working distance d1 can be increased, the distance d2 from the objective lens 61a to the fθ lens 73 and the distance d1 from the objective lens 61a to the support substrate 10, which is the object to be imaged, may be disposed so that they are approximately equal.

[0057] In addition, in the above embodiment, an example was shown in which the imaging device is used as the imaging unit 60 of the semiconductor chip transfer device 100, but the present invention is not limited to this. In the present invention, the imaging device may be provided on a device other than the semiconductor chip transfer device 100, and may be provided on any device, particularly when used in a small space.

[0058] Furthermore, in the above embodiment, an example has been shown in which the imaging unit 60 acquires an image of the semiconductor chip 1 in order to adjust the irradiation position of the laser light L, but the present invention is not limited to this. In the present invention, the object imaged by the imaging unit 60 may be anything that can be imaged with a visible light optical system, and for example, the imaging unit 60 may be used to image a position adjustment board or the like on which a reticle is provided in order to adjust the irradiation position of the laser light L.

[0059] Furthermore, in the above embodiment, an example was shown in which an adhesive layer made of polyimide or silicon was formed on the support substrate 10, but the present invention is not limited to this. In the present invention, any layer may be formed on the support substrate 10 as long as it is capable of supporting the semiconductor chip 1 and can release the supported state of the semiconductor chip 1 by irradiation with laser light L. For example, the support substrate 10 may support the semiconductor chip 1 by forming a support layer of an inorganic material such as GaN (gallium nitride) crystal grown on a sapphire substrate without forming an adhesive layer.

[0060] In the above embodiment, an example was shown in which an element having a small thickness such as an InP chip was used as the semiconductor chip 1, but the present invention is not limited to this. For example, in the present invention, various semiconductor elements other than an InP chip may be used as the semiconductor chip 1.

[0061] In the above embodiment, the moving mechanism 50 is configured to be able to move both the support substrate holding part 30 and the stage 40, but the present invention is not limited to this. For example, the moving mechanism 50 may be provided separately for the support substrate holding part 30 and the stage 40. [Explanation of symbols]

[0062] 1. Semiconductor chip (element) 10 Support substrate 20 Transferred substrate 30 Support board holding part 40 stages 50, 51 Moving mechanism 60, 160 Imaging unit (imaging device) 60a Infinity Corrected Optical Unit 61a Objective Lens 62a Half mirror (mirror) 63a Imaging lens 64a Image sensor 65a Imaging lens 65, 165 Light irradiation part 70 Laser light irradiation unit 72 Galvanometer mirror (scanning mirror) 73 fθ lens (condensing lens) 80 Control Unit 100 Semiconductor chip transfer device (element transfer device) 62, 162 1st enclosure (enclosure) L laser light Li incident light lv lighting light

Claims

1. an infinity correction optical unit including an objective lens and an imaging lens onto which light incident from the objective lens is made parallel; an imaging element that captures an image of light incident through the imaging lens; An imaging device comprising: an internal mirror disposed between the objective lens and the imaging lens, the mirror changing the direction of light incident from the objective lens so that the light is incident on the imaging lens.

2. a light irradiation unit that irradiates light toward the objective lens, The imaging device according to claim 1 , wherein the mirror is configured to transmit light emitted from the light emitting unit and to change the direction of light incident from the objective lens.

3. a laser light irradiation unit that irradiates the support substrate with laser light from a side opposite to a surface of the support substrate that supports the element; a stage supporting a substrate onto which the elements are to be transferred; an imaging unit that is provided between the laser light irradiation unit and the stage and that captures an adjustment image used to adjust a transfer position of the element; The imaging unit is an element transfer device that includes an infinity correction optical unit including an objective lens and an imaging lens through which light incident from the objective lens is incident in parallel, and a mirror that is arranged between the objective lens and the imaging lens and changes the direction of the light incident from the objective lens so that it is incident on the imaging lens.

4. a scanning mirror and a condenser lens for changing the irradiation position of the laser light emitted from the laser light irradiation unit, The element transfer device according to claim 3 , wherein the imaging unit is disposed in a space where the condenser lens and the stage face each other during imaging.

5. 5. The element transfer device according to claim 4, further comprising a movement mechanism that moves the imaging unit to a space where the condenser lens and the stage face each other or to a position spaced apart from the space where the condenser lens and the stage face each other.

6. 6. The element transfer device according to claim 5, wherein the moving mechanism moves the imaging unit to a position away from the space where the condenser lens and the stage face each other when laser light is being irradiated from the laser light irradiation unit, and moves the imaging unit to the space where the condenser lens and the stage face each other when photographing when laser light is not being irradiated from the laser light irradiation unit.

7. 5. The element transfer device according to claim 4, wherein the imaging unit further includes a light irradiation unit that irradiates light toward the objective lens, and the mirror included in the imaging unit is configured to transmit light irradiated from the light irradiation unit and to change the direction of light incident from the objective lens.

8. The element transfer device according to claim 7 , wherein the light irradiation unit is disposed outside a housing of the imaging unit that houses the mirror, on a side opposite to a side on which the objective lens is disposed with respect to the mirror.

9. The element transfer device according to claim 4 , wherein the imaging unit is disposed so that the distance from the objective lens to the object to be photographed is shorter than the distance from the objective lens to the condenser lens.

Images