Manufacturing apparatus for display device and manufacturing method for display device

Abstract

To provide a manufacturing apparatus for a display device and a manufacturing method for a display device.SOLUTION: The present invention discloses a manufacturing apparatus for a display device for exposing a light-exposure region of a photoresist layer disposed on a substrate. The light-exposure region includes a laser part that delivers a plurality of Gaussian laser beams. The Gaussian laser beams overlap an overlap laser beam whose energy intensity has a Gaussian distribution in the light-exposure region. The light-exposure region includes a first region and a second region that surrounds the first region. The energy intensity of the overlap laser beam is different in the first region and the second region.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an apparatus and a method, and more particularly to an apparatus and a method for manufacturing a display device. [Background technology]

[0002] Mobility-based electronic devices are widely used. As mobile electronic devices, in addition to small electronic devices such as mobile phones, tablet PCs have recently become widely used.

[0003] Such mobile electronic devices include a display device to provide a user with visual information such as an image or video to support various functions. Recently, due to the miniaturization of other components for driving the display device, the proportion of the display device in the electronic device has gradually increased, and structures that can be folded at a predetermined angle from a flat state have also been developed. Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention aims to solve the problem of precisely etching two layers into different shapes without using a separate photomask in a photolithography process.

[0005] However, such problems are merely examples, and the problems that the present invention aims to solve are not limited to these. [Means for solving the problem]

[0006] One embodiment of the present invention discloses a display device manufacturing apparatus that exposes an exposure area of ​​a photoresist layer arranged on a substrate, the apparatus including a laser unit that irradiates the exposure area with a plurality of Gaussian laser beams, the plurality of Gaussian laser beams being superimposed on a superimposed laser beam having a Gaussian distribution of energy intensity in the exposure area, the exposure area including a first area and a second area surrounding the first area, and the energy intensity of the superimposed laser beam being different from each other in the first area and the second area.

[0007] In the present embodiment, the laser unit can irradiate the first region and the second region with a plurality of Gaussian laser beams so as to correspond to a plurality of virtual cells arranged in a grid pattern in the exposure region.

[0008] In this embodiment, the exposure area further includes a third area disposed between the first area and the second area, and among the plurality of cells, cells overlapping with the third area are not irradiated with the corresponding Gaussian laser beam.

[0009] In this embodiment, the thickness of the third region is not less than 0.3 μm and not more than 0.5 μm.

[0010] In this embodiment, each of the plurality of cells has a rectangular shape, and the length of one side of any one of the plurality of cells is not less than 2 μm and not more than 3 μm.

[0011] In this embodiment, the energy intensity of the superimposed laser beam is also higher in the first region compared to the second region.

[0012] In this embodiment, the energy intensity of the superimposed laser beam in the second region is also 50% of the energy intensity of the superimposed laser beam in the first region.

[0013] Another embodiment of the present invention includes a step of sequentially disposing a first layer, a second layer, and a photoresist layer on a substrate, and an exposure step of exposing an exposure area of ​​the photoresist layer disposed on the substrate, wherein the exposure step includes a step of irradiating the exposure area with a plurality of Gaussian laser beams using a laser unit, and a step of superimposing the plurality of Gaussian laser beams into a superimposed laser beam having an energy intensity with a Gaussian distribution in the exposure area, wherein the exposure area includes a first area and a second area surrounding the first area, and the energy intensity of the superimposed laser beam may be different from each other in the first area and the second area.

[0014] In this embodiment, the method may further include developing the photoresist layer to expose the second layer overlapping the first region, and etching the first layer and the second layer overlapping the first region.

[0015] In this embodiment, the method may further include ashing the photoresist layer to expose the second layer overlapping the second region, etching the second layer overlapping the second region, and removing the photoresist layer.

[0016] In the present embodiment, the laser unit can irradiate the first region and the second region with a plurality of Gaussian laser beams so as to correspond to a plurality of virtual cells arranged in a grid pattern in the exposure region.

[0017] In this embodiment, the exposure area further includes a third area disposed between the first area and the second area, and among the plurality of cells, cells overlapping with the third area are not irradiated with the corresponding Gaussian laser beam.

[0018] In this embodiment, the thickness of the third region is not less than 0.3 μm and not more than 0.5 μm.

[0019] In this embodiment, each of the plurality of cells has a rectangular shape, and the length of one side of any one of the plurality of cells is not less than 2 μm and not more than 3 μm.

[0020] In this embodiment, the energy intensity of the superimposed laser beam is also higher in the first region compared to the second region.

[0021] In this embodiment, the energy intensity of the superimposed laser beam in the second region is also 50% of the energy intensity of the superimposed laser beam in the first region.

[0022] Other aspects, features, and advantages beyond those described above will become apparent from the following drawings, claims, and detailed description of the invention. [Effects of the Invention]

[0023] According to an embodiment of the present invention, the photolithography process can be simplified, the manufacturing cost and time of the display device can be reduced, and manufacturing precision can be improved.

[0024] The effects of the present invention are not limited to the effects described above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims. [Brief explanation of the drawings]

[0025] [Figure 1] 1 is a schematic perspective view of a display device manufacturing apparatus according to an embodiment of the present invention; [Figure 2] FIG. 2 is a schematic block diagram of a laser section according to an embodiment of the present invention. [Figure 3] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 4] 1 is a schematic plan view of a display device according to an embodiment of the present invention; [Figure 5] 1 is a schematic plan view of a display device according to an embodiment of the present invention; [Figure 6]FIG. 2 is a schematic energy distribution diagram of a Gaussian laser beam according to an embodiment of the present invention. [Figure 7] FIG. 2 is a schematic energy distribution diagram of a superimposed laser beam according to an embodiment of the present invention. [Figure 8] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 9] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 10] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 11] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 12] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 13] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 14] FIG. 10 is a schematic plan view of a display device according to another embodiment of the present invention. [Figure 15] FIG. 10 is a schematic plan view of a display device according to another embodiment of the present invention. [Figure 16] FIG. 10 is a schematic energy distribution diagram of a superimposed laser beam according to another embodiment of the present invention. [Figure 17] FIG. 2 is a schematic energy distribution diagram of a superimposed laser beam according to an embodiment of the present invention. [Figure 18] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 19] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 20] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 21] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 22] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 23] 1 is a schematic cross-sectional view of a display device according to an embodiment of the present invention; [Figure 24] 1 is a plan view schematically illustrating a display device according to an embodiment of the present invention; [Figure 25] 1 is a cross-sectional view schematically illustrating a display device according to an embodiment of the present invention. [Figure 26] 1 is an equivalent circuit diagram of one pixel of a display device according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0026] The present invention can be modified in various ways and can have various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. The advantages and features of the present invention, and methods for achieving them, will become clearer with reference to the embodiments described in detail below in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below, and may be embodied in various forms.

[0027] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, identical or corresponding components will be designated by the same reference numerals, and duplicate descriptions thereof will be omitted.

[0028] In the following embodiments, terms such as first and second are used to distinguish one component from another, without any limiting meaning.

[0029] In the following embodiments, the singular expression includes the plural expression unless the context clearly indicates otherwise.

[0030] In the following embodiments, terms such as "comprise" or "have" mean the presence of the features or components described in the specification, and do not preclude the possibility of adding one or more other features or components.

[0031] In the following embodiments, when a part such as a film, region, or component is said to be on or above another part, this includes not only the case where it is directly on top of the other part, but also the case where another film, region, component, etc. is interposed between them.

[0032] In the drawings, the size of components may be exaggerated or reduced for the sake of convenience. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for the sake of convenience, and the present invention is not necessarily limited to what is shown in the drawings.

[0033] In the following embodiments, the x-axis, y-axis, and z-axis are not limited to the three axes on a Cartesian coordinate system, but may be interpreted in a broad sense including the three axes. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, or may not be orthogonal to each other and point in different directions.

[0034] If an embodiment can be implemented differently, the order of certain steps may be different from that described. For example, two steps described in succession may be performed substantially simultaneously or may be performed in the reverse order from that described.

[0035] FIG. 1 is a schematic perspective view of a display device manufacturing apparatus 1 according to one embodiment of the present invention, FIG. 2 is a schematic block diagram of a laser section 12 according to one embodiment of the present invention, FIG. 3 is a schematic cross-sectional view of a display device DD according to one embodiment of the present invention, and FIG. 4 is a schematic plan view of a display device DD according to one embodiment of the present invention.

[0036] 1 to 4, a display device manufacturing apparatus 1 may include a stage 11, a laser unit 12, and a control unit 13.

[0037] The display device DD may include a substrate SB, a first layer LA1, a second layer LA2, and a photoresist layer PR. The first layer LA1 may be disposed on the substrate SB, the second layer LA2 may be disposed on the first layer LA1, and the photoresist layer PR may be disposed on the second layer LA2. That is, the first layer LA1, the second layer LA2, and the photoresist layer PR may be sequentially stacked on the substrate SB.

[0038] The substrate SB may also be a multi-layer structure including a base layer containing a polymer resin and an inorganic layer. For example, the substrate SB may include a base layer containing a polymer resin and a barrier layer of an inorganic insulating layer.

[0039] The first layer LA1 and the second layer LA2 may each include an inorganic insulator such as silicon oxide (SiO2), silicon nitride (SiNX), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnOX).

[0040] Alternatively, the first layer LA1 and the second layer LA2 may each include an organic insulator such as a general-purpose polymer such as polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or a blend thereof.

[0041] The display device manufacturing apparatus 1 may expose the display device DD. Specifically, the display device manufacturing apparatus 1 may expose an exposure area AR of a photoresist layer PR disposed on a substrate SB. The display device manufacturing apparatus 1 irradiates light in a direction perpendicular to the substrate SB (e.g., the -z-axis direction), and the exposure area AR may be formed on the plane of the photoresist layer PR. In FIG. 4, the exposure area AR is illustrated as being rectangular on the plane, but this is merely an example and the shape of the exposure area AR is not limited thereto.

[0042] The stage 11 can support the display device DD. The display device DD can be placed on the stage 11. With the display device DD placed on the stage 11, the display device can be fixed to the stage 11.

[0043] The laser unit 12 may emit a laser beam and may include a laser emitting unit 121, a telescope lens unit 122, and a homogenizing unit 123.

[0044] The laser emitting unit 121 may emit a laser beam. The laser beam emitted from the laser emitting unit 121 may be incident on the telescope lens unit 122.

[0045] The laser emitted from the laser emitting unit 121 may be an ultra-short pulse laser beam having a pulse duration of picoseconds or femtoseconds. For example, the pulse duration of the laser may be 190 to 290 fs (femtoseconds). However, the pulse duration of the laser is not limited thereto. For example, the pulse duration of the laser may be 100 fs or less.

[0046] The telescope lens unit 122 may adjust the cross-sectional size of the laser. Here, the cross-section of the laser refers to a cross-section perpendicular to the laser propagation direction. The telescope lens unit 122 may adjust at least one of the length of the laser in the long axis direction and the length of the laser in the short axis direction. The telescope lens unit 122 may variably adjust the cross-sectional size of the laser according to the size of the substrate SB. The laser passing through the telescope lens unit 122 may be incident on the homogenizer unit 123.

[0047] The homogenizer 123 may homogenize the energy density of the laser cross section. The laser beam may have a Gaussian distribution of energy intensity. For example, the energy density at the center of the laser cross section is higher than the energy density at the periphery of the laser cross section. In this case, the homogenizer 123 may homogenize the Gaussian distribution of the laser energy density. For example, the homogenizer 123 may homogenize at least one of the energy density in the long axis direction and the energy density in the short axis direction of the laser. The laser that has passed through the homogenizer 123 may be incident on the substrate SB.

[0048] The control unit 13 may control the laser unit 12. For example, the control unit 13 may control the intensity, shape, and position of the laser beam emitted by the laser unit 12.

[0049] FIG. 5 is a schematic plan view of a display device DD according to an embodiment of the present invention, and FIG. 6 is a schematic energy distribution diagram of a Gaussian laser beam GLB according to an embodiment of the present invention.

[0050] Specifically, FIG. 5 is an enlarged view of part A in FIG. 4, and FIG. 6 is an energy distribution diagram taken along line VI-VI' in FIG.

[0051] 1 and 4 to 6, the laser unit 12 can irradiate an exposure area AR with a plurality of Gaussian laser beams GLB.

[0052] The exposure area AR may include a plurality of virtual cells arranged in a grid pattern. Each of the plurality of cells may be rectangular in shape, and the plurality of cells may be arranged in a grid pattern. For example, each of the plurality of cells may be square in shape, and the size of each of the plurality of cells may be the same as one another. For example, the length of one side of any of the plurality of cells may be 2 μm or more and 3 μm or less.

[0053] The laser unit 12 can irradiate multiple Gaussian laser beams GLB to correspond to multiple virtual cells arranged in a grid pattern in the exposure area AR. Therefore, the spacing between the multiple cells and the spacing between the multiple Gaussian laser beams GLB are the same. The planar shape of each of the multiple Gaussian laser beams GLB is also circular. The diameter of each of the multiple Gaussian laser beams GLB is longer than the diagonal length of each of the multiple cells. Therefore, one Gaussian laser beam GLB can overlap with adjacent multiple Gaussian laser beams GLB.

[0054] In the graph shown in Fig. 6, the horizontal axis represents position and the vertical axis represents energy intensity, i.e., Fig. 6 is an energy distribution diagram showing the energy intensity of any one Gaussian laser beam GLB at each position.

[0055] The energy intensity of the Gaussian laser beam GLB may have a Gaussian distribution. The energy distribution diagram of the Gaussian laser beam GLB is symmetrical with respect to the first central axis CL1. Looking at the energy distribution diagram of the Gaussian laser beam GLB, the energy intensity may be highest at the first central axis CL1 and gradually decrease as the distance from the first central axis CL1 increases.

[0056] FIG. 7 is a schematic energy distribution diagram of a superimposed laser beam OLB1 according to one embodiment of the present invention.

[0057] Specifically, FIG. 7 is an energy distribution diagram taken along line VII-VII' in FIG.

[0058] 1 and 4 to 7, a plurality of Gaussian laser beams GLB may be superimposed on a superimposed laser beam OLB1 in an exposure area AR.

[0059] 5, multiple Gaussian laser beams GLB may overlap each other in the exposure area AR. For example, as shown in FIG. 5, one Gaussian laser beam GLB may overlap with at least eight adjacent Gaussian laser beams GLB. The multiple Gaussian laser beams GLB may be overlapped to form an overlapped laser beam OLB1.

[0060] 7, the horizontal axis represents position and the vertical axis represents energy intensity. That is, FIG. 7 is an energy distribution diagram showing the energy intensity of the superimposed laser beam OLB1 at each position in the entire exposure area AR.

[0061] The energy intensity of the superposed laser beam OLB1 at each position is also the sum of the energy intensities of the multiple Gaussian laser beams GLB at each position. Since the energy intensities of the multiple Gaussian laser beams GLB have a Gaussian distribution, the energy intensity of the superposed laser beam OLB1 may also have a Gaussian distribution. Therefore, the energy distribution diagram of the superposed laser beam OLB1 is symmetrical with respect to the second central axis CL2. Looking at the energy distribution diagram of the superposed laser beam OLB1, the energy intensity is highest at the second central axis CL2 and may gradually decrease as the distance from the second central axis CL2 increases.

[0062] The exposure area AR may include a first area AR1 and a second area AR2. The second area AR2 may be arranged to surround the first area AR1. That is, the first area AR1 may be arranged in the center of the exposure area AR, and the second area AR2 may be arranged outside the exposure area AR. The laser unit 12 may irradiate the first area AR1 and the second area AR2 with a plurality of Gaussian laser beams GLB so as to correspond to a plurality of virtual cells arranged in the exposure area AR. In FIG. 4, the first area AR1 is illustrated as being rectangular on a plane, but this is merely an example, and the shape of the first area AR1 is not limited thereto.

[0063] The energy intensity of the multiple Gaussian laser beams GLB irradiated onto the first area AR1 may be different from the energy intensity of the multiple Gaussian laser beams GLB irradiated onto the second area AR2. For example, the energy intensity of the multiple Gaussian laser beams GLB irradiated onto the first area AR1 may be greater than the energy intensity of the multiple Gaussian laser beams GLB irradiated onto the second area AR2.

[0064] Therefore, the energy intensity of the superposed laser beam OLB1 may be different between the first region AR1 and the second region AR2. The energy intensity of the superposed laser beam OLB1 is higher in the first region AR1 than in the second region AR2. For example, the energy intensity of the superposed laser beam OLB1 in the second region AR2 is 50% of the energy intensity of the superposed laser beam OLB1 in the first region AR1.

[0065] 8 to 13 are schematic cross-sectional views of a display device DD according to an embodiment of the present invention.

[0066] 8 to 13, the same reference numerals as those in FIGS. 1 to 7 denote the same members, and therefore, redundant explanations thereof will be omitted.

[0067] 1 to 13, a method for manufacturing the display device DD can be seen.

[0068] First, referring to FIG. 8, a method for manufacturing a display device DD may include sequentially disposing a first layer LA1, a second layer LA2, and a photoresist layer PR on a substrate SB, and exposing an exposure area AR of the photoresist layer PR.

[0069] The photoresist layer PR may include a photosensitive material, for example, an HMDS material.

[0070] The exposure step may include a step in which the laser unit 12 irradiates the exposure area AR with multiple Gaussian laser beams GLB, and a step in which the multiple Gaussian laser beams GLB are superimposed on a superimposed laser beam OLB1 having a Gaussian distribution of energy intensity in the exposure area AR.

[0071] In this case, the exposure area AR may include a first area AR1 and a second area AR2 surrounding the first area AR1. The energy intensity of the superimposed laser beam OLB1 may be different between the first area AR1 and the second area AR2. The energy intensity of the superimposed laser beam OLB1 is higher in the first area AR1 than in the second area AR2.

[0072] The portion of the photoresist layer PR exposed to the overlapping laser beam OLB1 may be dissolved. For example, the portion of the photoresist layer PR overlapping the first region AR1 may be completely dissolved. The portion of the photoresist layer PR overlapping the second region AR2 may be partially dissolved.

[0073] Referring to FIG. 9, the method for manufacturing the display device DD may include developing the photoresist layer PR to expose the second layer LA2 overlapping the first region AR1.

[0074] As the photoresist layer PR is developed, portions of the photoresist layer PR may be removed. The completely dissolved portions of the photoresist layer PR that overlap the first region AR1 may be completely removed. The partially dissolved portions of the photoresist layer PR that overlap the second region AR2 may be partially removed. Therefore, the thickness of the photoresist layer PR may increase stepwise as it moves away from the second central axis CL2.

[0075] 10, the method for manufacturing the display device DD may include etching the first layer LA1 and the second layer LA2 overlapping the first region AR1. The second layer LA2 overlapping the first region AR1 may be etched first, and then the first layer LA1 overlapping the first region AR1 may be etched. For example, the first layer LA1 and the second layer LA2 may be etched by dry etching using an etching gas. Alternatively, the first layer LA1 and the second layer LA2 may be etched by wet etching using an etching solution.

[0076] In this process, a first opening OP1 may be formed penetrating the first layer LA1 and the second layer LA2. In this case, the sizes of the first opening OP1 and the first region AR1 may not be the same. The width of the first region AR1 may be greater than the width of the first opening OP1. That is, the first opening OP1 and the first region AR1 may be spaced apart by a first distance d1.

[0077] 11, the method for manufacturing the display device DD may include ashing the photoresist layer PR to expose the second layer LA2 overlapping the second region AR2. Therefore, the overall thickness of the photoresist layer PR may be reduced. During this process, the portion of the photoresist layer PR overlapping the second region AR2 may be removed.

[0078] 12, the method for manufacturing the display device DD may include etching the second layer LA2 overlapping the second region AR2. For example, the first layer LA1 and the second layer LA2 may be etched by dry etching using an etching gas. Alternatively, the first layer LA1 and the second layer LA2 may be etched by wet etching using an etching solution.

[0079] In this process, a second opening OP2 penetrating the second layer LA2 may be formed. In this case, the sizes of the second opening OP2 and the second region AR2 may not be the same. The width of the second region AR2 may be greater than the width of the second opening OP2. That is, the second opening OP2 and the second region AR2 may be spaced apart by a second distance d2.

[0080] Referring to FIG. 13, the step of removing the photoresist layer PR may be included.

[0081] 8 to 13, the first layer LA1 and the second layer LA2 can be etched into different shapes without using a separate photomask. That is, a first opening OP1 can be formed in the first layer LA1 and a second opening OP2 having a different shape from the first opening OP1 can be formed in the second layer LA2 through a simple manufacturing process. Therefore, the process can be simplified, and manufacturing costs and time can be reduced.

[0082] FIG. 14 is a schematic plan view of a display device DD according to another embodiment of the present invention.

[0083] In FIG. 14, the same reference numerals as those in FIGS. 1 to 6 refer to the same elements, and therefore a duplicated description thereof will be omitted.

[0084] Referring to FIG. 14, a display device manufacturing apparatus 1 can expose a display device DD.

[0085] Specifically, the display device manufacturing apparatus 1 can expose an exposure area AR of a photoresist layer PR disposed on a substrate SB. The display device manufacturing apparatus 1 can irradiate light in a direction perpendicular to the substrate SB (for example, the -z axis direction), and the exposure area AR can be formed on the plane of the photoresist layer PR.

[0086] The exposure area AR may include a first area AR1, a second area AR2, and a third area AR3. The second area AR2 may be arranged to surround the first area AR1. The third area AR3 may be arranged between the first area AR1 and the second area AR2. That is, the first area AR1 may be arranged in the center of the exposure area AR, the third area AR3 may be arranged to surround the first area AR1, and the second area AR2 may be arranged to surround the third area AR3.

[0087] FIG. 15 is a schematic plan view of a display device DD according to another embodiment of the present invention.

[0088] Specifically, FIG. 15 is an enlarged view of part B in FIG.

[0089] 1, 14 and 15, the laser unit 12 can irradiate the exposure area AR with a plurality of Gaussian laser beams GLB.

[0090] The exposure area AR may include a plurality of virtual cells arranged in a grid pattern. Each of the plurality of cells may be rectangular, forming a grid pattern. For example, each of the plurality of cells may be square, and the size of each of the plurality of cells may be the same. For example, the length of one side of any of the plurality of cells may be 2 μm or more and 3 μm or less. For example, the length of one side of each of the cells overlapping the first area AR1 and the second area AR2 may be 2 μm or more and 3 μm or less. The length of one side of each of the cells overlapping the third area AR3 may be 0.3 μm or more and 0.5 μm or less. A plurality of cells may be arranged in a row in the third area AR3. In such a structure, the thickness of the third area AR3 may be 0.3 μm or more and 0.5 μm or less.

[0091] The laser unit 12 can irradiate multiple Gaussian laser beams GLB to correspond to multiple virtual cells arranged in a grid pattern in the exposure area AR. Therefore, the spacing between the multiple cells and the spacing between the multiple Gaussian laser beams GLB are the same. The planar shape of each of the multiple Gaussian laser beams GLB is also circular. The diameter of each of the multiple Gaussian laser beams GLB is longer than the diagonal length of each of the multiple cells. Therefore, one Gaussian laser beam GLB can overlap with adjacent multiple Gaussian laser beams GLB.

[0092] Among the plurality of cells, cells overlapping with the third region AR3 are not irradiated with the corresponding Gaussian laser beam GLB. That is, among the plurality of cells, only cells overlapping with the first region AR1 and cells overlapping with the second region AR2 may be irradiated with the corresponding Gaussian laser beam GLB. A portion of the Gaussian laser beam GLB irradiated onto the cells overlapping with the first region AR1 and cells overlapping with the second region AR2 may be superimposed on the cells overlapping with the third region AR3. That is, the Gaussian laser beam GLB may not be directly irradiated onto the cells overlapping with the third region AR3, but may be only indirectly irradiated onto them.

[0093] FIG. 16 is a schematic energy distribution diagram of a superimposed laser beam OLB2 according to another embodiment of the present invention.

[0094] Specifically, FIG. 16 is an energy distribution diagram taken along line XV-XV' in FIG.

[0095] 1 and 14 to 16, a plurality of Gaussian laser beams GLB may be superimposed on a superimposed laser beam OLB2 in an exposure area AR.

[0096] In the graph shown in Fig. 16, the horizontal axis represents position and the vertical axis represents energy intensity. That is, Fig. 16 is an energy distribution diagram showing the energy intensity of the superimposed laser beam OLB2 at each position in the entire exposure area AR.

[0097] The energy intensity of the superposed laser beam OLB2 at each position is also the sum of the energy intensities of the multiple Gaussian laser beams GLB at each position. Since the energy intensities of the multiple Gaussian laser beams GLB have a Gaussian distribution, the energy intensity of the superposed laser beam OLB2 may also have a Gaussian distribution. Therefore, the energy distribution diagram of the superposed laser beam OLB2 is symmetrical with respect to the third central axis CL3. Looking at the energy distribution diagram of the superposed laser beam OLB2, the energy intensity is highest at the third central axis CL3 and may gradually decrease as the distance from the third central axis CL3 increases.

[0098] The energy intensity of the multiple Gaussian laser beams GLB irradiated onto the first region AR1 may be different from the energy intensity of the multiple Gaussian laser beams GLB irradiated onto the second region AR2. For example, the energy intensity of the multiple Gaussian laser beams GLB irradiated onto the first region AR1 is greater than the energy intensity of the multiple Gaussian laser beams GLB irradiated onto the second region AR2.

[0099] Therefore, the energy intensity of the superposed laser beam OLB2 may be different between the first region AR1 and the second region AR2. The energy intensity of the superposed laser beam OLB2 is higher in the first region AR1 than in the second region AR2. For example, the energy intensity of the superposed laser beam OLB2 in the second region AR2 is 50% of the energy intensity of the superposed laser beam OLB2 in the first region AR1. Since the third region AR3 is not directly irradiated with the Gaussian laser beam GLB, the energy intensity of the superposed laser beam OLB2 is lower in the third region AR3 than in the second region AR2.

[0100] FIG. 17 is a schematic energy distribution diagram of the superimposed laser beams OLB1 and OLB2 according to one embodiment of the present invention.

[0101] Specifically, FIG. 17 is a graph simultaneously showing the energy distribution diagram of the superimposed laser beam OLB1 described with reference to FIG. 7 and the energy distribution diagram of the superimposed laser beam OLB2 described with reference to FIG.

[0102] For convenience of explanation, the superimposed laser beam OLB1 described with reference to FIG. 7 will also be referred to as the first superimposed laser beam OLB1, and the superimposed laser beam OLB2 described with reference to FIG. 16 will also be referred to as the second superimposed laser beam OLB2.

[0103] 7, 16, and 17, in the first region AR1, the absolute value of the gradient of the second superimposed laser beam OLB2 is greater than the absolute value of the gradient of the first superimposed laser beam OLB1. Specifically, at the boundary where the first region AR1 begins, the absolute value of the gradient of the second superimposed laser beam OLB2 is greater than the absolute value of the gradient of the first superimposed laser beam OLB1.

[0104] 18 to 23 are schematic cross-sectional views of a display device DD according to an embodiment of the present invention.

[0105] 18 to 23, the same reference numerals as those in FIGS. 14 to 17 refer to the same members, and therefore redundant explanations thereof will be omitted.

[0106] 1 and 14 to 23, a method for manufacturing the display device DD can be known.

[0107] First, referring to FIG. 18, a method for manufacturing a display device DD may include sequentially disposing a first layer LA1, a second layer LA2, and a photoresist layer PR on a substrate SB, and exposing an exposure area AR of the photoresist layer PR.

[0108] The exposure step may include a step in which the laser unit 12 irradiates the exposure area AR with multiple Gaussian laser beams GLB, and a step in which the multiple Gaussian laser beams GLB are superimposed on a superimposed laser beam OLB2 having a Gaussian distribution of energy intensity in the exposure area AR.

[0109] In this case, the exposure area AR may include a first area AR1, a second area AR2, and a third area AR3. The second area AR2 may be disposed to surround the first area AR1, and the third area AR3 may be disposed between the first area AR1 and the second area AR2. In addition, the energy intensity of the superimposed laser beam OLB2 may be different among the first area AR1, the second area AR2, and the third area AR3. The energy intensity of the superimposed laser beam OLB2 is higher in the first area AR1 than in the second area AR2. The energy intensity of the superimposed laser beam OLB2 is lower in the third area AR3 than in the second area AR2.

[0110] The portions of the photoresist layer PR exposed to the overlapping laser beam OLB2 may be dissolved. For example, the portions of the photoresist layer PR overlapping the first region AR1 may be completely dissolved. The portions of the photoresist layer PR overlapping the second region AR2 and the third region AR3 may be partially dissolved.

[0111] Referring to FIG. 19, the method for manufacturing the display device DD may include developing the photoresist layer PR to expose the second layer LA2 overlapping the first region AR1.

[0112] As the photoresist layer PR is developed, portions of the photoresist layer PR may be removed. Any completely dissolved portions of the photoresist layer PR that overlap the first region AR1 may be removed. Any partially dissolved portions of the photoresist layer PR that overlap the second region AR2 may be partially removed. Additionally, any partially dissolved portions of the photoresist layer PR that overlap the third region AR3 may be partially removed.

[0113] Therefore, the thickness of the photoresist layer PR overlapping with the second region AR2 is greater than the thickness of the photoresist layer PR overlapping with the first region AR1. Also, the thickness of the photoresist layer PR overlapping with the third region AR3 is greater than the thickness of the photoresist layer PR overlapping with the second region AR2. The photoresist layer PR overlapping with the third region AR3 also has a convex shape in a direction away from the substrate SB (for example, in the +z-axis direction).

[0114] 20, the method for manufacturing the display device DD may include etching the first layer LA1 and the second layer LA2 overlapping the first region AR1. The second layer LA2 overlapping the first region AR1 may be etched first, and then the first layer LA1 overlapping the first region AR1 may be etched. For example, the first layer LA1 and the second layer LA2 may be etched by dry etching using an etching gas. Alternatively, the first layer LA1 and the second layer LA2 may be etched by wet etching using an etching solution.

[0115] In this process, a third opening OP3 may be formed penetrating the first layer LA1 and the second layer LA2. In this case, the sizes of the third opening OP3 and the first region AR1 may not be the same. The width of the first region AR1 may be greater than the width of the third opening OP3. That is, the third opening OP3 and the first region AR1 may be spaced apart by a third distance d3.

[0116] 21, the method for manufacturing the display device DD may include ashing the photoresist layer PR to expose the second layer LA2 overlapping the second region AR2. Therefore, the overall thickness of the photoresist layer PR may be reduced. During this process, the portion of the photoresist layer PR overlapping the second region AR2 may be removed.

[0117] 22, the method for manufacturing the display device DD may include etching the second layer LA2 overlapping the second region AR2. For example, the first layer LA1 and the second layer LA2 may be etched by dry etching using an etching gas. Alternatively, the first layer LA1 and the second layer LA2 may be etched by wet etching using an etching solution.

[0118] In this process, a fourth opening OP4 penetrating the second layer LA2 may be formed. At this time, the sizes of the fourth opening OP4 and the second region AR2 may not be the same. The width of the second region AR2 may be greater than the width of the fourth opening OP4. That is, the fourth opening OP4 and the second region AR2 may be spaced apart by a fourth distance d4.

[0119] Referring to FIG. 23, the step of removing the photoresist layer PR may be included.

[0120] 17, in the first region AR1, the absolute value of the gradient of the second superimposed laser beam OLB2 is greater than the absolute value of the gradient of the first superimposed laser beam OLB1. Therefore, in the embodiment described with reference to Figures 14 to 23, the gradient of the cross section of the photoresist layer PR overlapping with the first region AR1 is closer to vertical than in the embodiment described with reference to Figures 4 to 13.

[0121] Therefore, the third distance d3 described with reference to Fig. 20 is shorter than the first distance d1 described with reference to Fig. 10. That is, the error between the first region AR1 and the third opening OP3 described with reference to Fig. 20 is smaller than the error between the first region AR1 and the first opening OP1 described with reference to Fig. 10. That is, according to the embodiment described with reference to Figs. 14 to 23, by disposing the third region AR3 between the first region AR1 and the second region AR2, the dispersion of the superimposed laser beam OLB2 is increased, and the precision of the display device manufacturing apparatus 1 can be improved.

[0122] FIG. 24 is a plan view schematically showing a display device 2 according to one embodiment of the present invention.

[0123] 24, a display device 2 manufactured according to an embodiment of the present invention may include a display area DA and a peripheral area PA located outside the display area DA. The display device 2 may provide an image through an array of a plurality of pixels PX arranged two-dimensionally in the display area DA.

[0124] The peripheral area PA is an area that does not provide an image and may entirely or partially surround the display area DA. Drivers and the like may be arranged in the peripheral area PA to provide electrical signals and power to pixel circuits corresponding to the pixels PX. Pads, which are areas to which electronic elements, printed circuit boards, and the like are electrically connected, may also be arranged in the peripheral area PA.

[0125] Hereinafter, the display device 2 will be described as a light-emitting element including an organic light-emitting diode (OLED), but the display device 2 of the present invention is not limited thereto. In another embodiment, the display device 2 may be a light-emitting display device including an inorganic light-emitting diode, i.e., an inorganic light-emitting display. The inorganic light-emitting diode may include a PN diode including an inorganic semiconductor-based material. When a forward voltage is applied to the PN junction diode, holes and electrons are injected, and the energy generated by the recombination of the holes and electrons is converted into light energy to emit light of a predetermined color. The inorganic light-emitting diode has a width of several to several hundred μm, and in some embodiments, the inorganic light-emitting diode is also referred to as a micro LED. In yet another embodiment, the display device 2 may be a quantum dot light-emitting display.

[0126] The display device 2 may be used as a display screen for various products, such as portable electronic devices such as mobile phones, smartphones, tablet personal computers (PCs), mobile communication terminals, electronic organizers, e-books, portable multimedia players (PMPs), navigation systems, and ultra-mobile PCs (UMPCs), as well as televisions, notebook computers, monitors, billboards, and Internet of Things (IoT) devices. The display device 2 according to an embodiment may also be used in wearable devices, such as smart watches, watch phones, eyeglass displays, and head-mounted displays (HMDs). The display device 2 according to an embodiment may also be used in a center information display (CID) disposed in an automobile instrument panel, a center fascia or dashboard, a room mirror display replacing the side mirrors, or a display screen disposed behind the front seats for rear-seat entertainment in an automobile.

[0127] FIG. 25 is a cross-sectional view schematically illustrating a display device 2 according to an embodiment of the present invention, and may correspond to a cross section of the display device 2 taken along line CC' in FIG.

[0128] 25, the display device 2 may include a substrate 100 and a display layer DISL. Specifically, the display layer DISL may include a stacked structure of a pixel circuit layer PCL, a display element layer DEL, and an encapsulation layer 300.

[0129] The substrate 100 may also have a multi-layer structure including a base layer containing a polymer resin and an inorganic layer. For example, the substrate 100 may include a base layer containing a polymer resin and a barrier layer of an inorganic insulating layer. For example, the substrate 100 may include a first base layer 101, a first barrier layer 102, a second base layer 103, and a second barrier layer 104, which are stacked in sequence. The first base layer 101 and the second base layer 103 may include polyimide (PI), polyethersulfone (PES), polyarylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polycarbonate, cellulose triacetate (TAC), and / or cellulose acetate propionate (CAP). The first barrier layer 102 and the second barrier layer 104 may include inorganic insulators such as silicon oxide, silicon oxynitride, and / or silicon nitride. The substrate 100 may be flexible.

[0130] A pixel circuit layer PCL is disposed on the substrate 100. Fig. 25 illustrates that the pixel circuit layer PCL includes a thin film transistor TFT, and a buffer layer 111, a first gate insulating layer 112, a second gate insulating layer 113, an interlayer insulating layer 114, a first planarization insulating layer 115, and a second planarization insulating layer 116 disposed under and / or over components of the thin film transistor TFT.

[0131] The buffer layer 111 may reduce or block penetration of foreign matter, moisture, or external air from underneath the substrate 100, and may provide a flat surface on the substrate 100. The buffer layer 111 may include an inorganic insulator such as silicon oxide, silicon oxynitride, or silicon nitride, and may have a single-layer or multi-layer structure including the above-mentioned materials.

[0132] The thin film transistor TFT on the buffer layer 111 includes a semiconductor layer Act, which may include polysilicon (poly-Si). Alternatively, the semiconductor layer Act may include amorphous silicon (a-Si), an oxide semiconductor, an organic semiconductor, or the like. The semiconductor layer Act may include a channel region C, and a drain region D and a source region S disposed on both sides of the channel region C, respectively. A gate electrode GE may overlap the channel region C.

[0133] The gate electrode GE may include a low-resistivity metal material, such as molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti), and may be formed of a single layer or multiple layers of the above materials.

[0134] The first gate insulating layer 112 between the semiconductor layer Act and the gate electrode GE may include an inorganic insulator such as silicon oxide (SiO), silicon nitride (SiNX), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnOX). Zinc oxide (ZnOX) may also be zinc oxide (ZnO) and / or zinc peroxide (ZnO2).

[0135] A second gate insulating layer 113 may be formed to cover the gate electrode GE. Similar to the first gate insulating layer 112, the second gate insulating layer 113 may include an inorganic insulator such as silicon oxide (SiO2), silicon nitride (SiNX), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnOX). Zinc oxide (ZnOX) may also be zinc oxide (ZnO) and / or zinc peroxide (ZnO2).

[0136] An upper electrode Cst2 of the storage capacitor Cst may be disposed on the second gate insulating layer 113. The upper electrode Cst2 may overlap the gate electrode GE thereunder. In this case, the gate electrode GE and the upper electrode Cst2 overlapping with the second gate insulating layer 113 sandwiched therebetween may form the storage capacitor Cst. That is, the gate electrode GE may function as a lower electrode Cst1 of the storage capacitor Cst.

[0137] In this manner, the storage capacitor Cst and the thin film transistor TFT may be formed to overlap each other. In some embodiments, the storage capacitor Cst may be formed so as not to overlap the thin film transistor TFT.

[0138] The top electrode Cst2 may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu), and may be a single layer or multiple layers of the aforementioned materials.

[0139] The interlayer insulating layer 114 may cover the upper electrode Cst2. The interlayer insulating layer 114 may include silicon oxide (SiO), silicon nitride (SiNX), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnOX). Zinc oxide (ZnOX) may also be zinc oxide (ZnO) and / or zinc peroxide (ZnO2). The interlayer insulating layer 114 may be a single layer or a multilayer including the aforementioned inorganic insulators.

[0140] The drain electrode DE and the source electrode SE may be located on the interlayer insulating layer 114. The drain electrode DE and the source electrode SE may be connected to the drain region D and the source region S, respectively, through contact holes formed in the insulating layer thereunder. The drain electrode DE and the source electrode SE may include a material with excellent conductivity. The drain electrode DE and the source electrode SE may include a conductive material such as molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer containing the above materials. In one embodiment, the drain electrode DE and the source electrode SE may have a Ti / Al / Ti multilayer structure.

[0141] The drain electrode DE and the source electrode SE may be covered with a first planarization insulating layer 115. The first planarization insulating layer 115 may include an organic insulator such as a general-purpose polymer such as polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or a blend thereof.

[0142] The second planarization insulating layer 116 may be disposed on the first planarization insulating layer 115. The second planarization insulating layer 116 may include the same material as the first planarization insulating layer 115, and may include organic insulators such as general-purpose polymers such as polymethylmethacrylate (PMMA) and polystyrene (PS), polymer derivatives having a phenolic group, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorine-based polymers, p-xylene-based polymers, vinyl alcohol-based polymers, and blends thereof.

[0143] A display element layer DEL may be disposed on the pixel circuit layer PCL having the above-described structure. The display element layer DEL may include an organic light-emitting diode (OLED) as a display element (i.e., a light-emitting element), and the organic light-emitting diode (OLED) may include a stacked structure of a pixel electrode 210, an intermediate layer 220, and a common electrode 230. The organic light-emitting diode (OLED) may emit, for example, red, green, or blue light, or may emit red, green, blue, or white light. The organic light-emitting diode (OLED) emits light through a light-emitting region, and the light-emitting region may be defined as a pixel PX.

[0144] The pixel electrode 210 of the organic light emitting diode (OLED) can be electrically connected to the thin film transistor TFT through a contact hole formed in the second planarization insulating layer 116 and the first planarization insulating layer 115 and a contact metal CM disposed on the first planarization insulating layer 115.

[0145] The pixel electrode 210 may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In another embodiment, the pixel electrode 210 may include a reflective film including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. In another embodiment, the pixel electrode 210 may further include a film made of ITO, IZO, ZnO, or In2O3 above or below the reflective film.

[0146] A bank layer 117 having an opening 117OP exposing a central portion of the pixel electrode 210 is disposed on the pixel electrode 210. The bank layer 117 may include an organic insulator and / or an inorganic insulator. The opening 117OP may define a light-emitting area for light emitted from an organic light-emitting diode (OLED). For example, the size / width of the opening 117OP may correspond to the size / width of the light-emitting area. Therefore, the size and / or width of the pixel PX may depend on the size and / or width of the opening 117OP of the bank layer 117.

[0147] The intermediate layer 220 may include an emissive layer 222 formed to correspond to the pixel electrode 210. The emissive layer 222 may include a polymer or small molecule organic material that emits light of a predetermined color, or may include an inorganic emissive material or quantum dots.

[0148] In one embodiment, the intermediate layer 220 may include a first functional layer 221 and a second functional layer 223 disposed below and above the light-emitting layer 222, respectively. The first functional layer 221 may include, for example, a hole transport layer (HTL) or a hole transport layer and a hole injection layer (HIL). The second functional layer 223 may include an electron transport layer (ETL) and / or an electron injection layer (EIL) as components disposed on the light-emitting layer 222. The first functional layer 221 and / or the second functional layer 223 may also be common layers formed to cover the entire substrate 100, similar to the common electrode 230 described below.

[0149] The common electrode 230 may be disposed on the pixel electrode 210 and overlap the pixel electrode 210. The common electrode 230 may be made of a conductive material with a low work function. For example, the common electrode 230 may include a (semi-)transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Alternatively, the common electrode 230 may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer containing the aforementioned material. The common electrode 230 may be formed integrally to cover the entire substrate 100.

[0150] The sealing layer 300 may be disposed on the display element layer DEL and cover the display element layer DEL. The sealing layer 300 includes at least one inorganic sealing layer and at least one organic sealing layer. In one embodiment, Fig. 25 illustrates that the sealing layer 300 includes a first inorganic sealing layer 310, an organic sealing layer 320, and a second inorganic sealing layer 330 that are stacked in sequence.

[0151] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include one or more inorganic materials selected from the group consisting of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 320 may include a polymer-based material. Examples of polymer-based materials include acrylic resin, epoxy resin, polyimide, and polyethylene. In one embodiment, the organic encapsulation layer 320 may include acrylate. The organic encapsulation layer 320 may be formed by curing a monomer or applying a polymer. The organic encapsulation layer 320 may be transparent.

[0152] Although not shown, a touch sensor layer (not shown) may be disposed on the encapsulation layer 300, and an optical function layer may be disposed on the touch sensor layer. The touch sensor layer may acquire coordinate information based on an external input, such as a touch event. The optical function layer may reduce the reflectance of light (external light) incident on the display device from the outside and / or improve the color purity of light emitted from the display device. In one embodiment, the optical function layer may include a phase retarder and / or a polarizer. The phase retarder may be a film type or a liquid crystal coating type and may include a λ / 2 phase retarder and / or a λ / 4 phase retarder. The polarizer may also be a film type or a liquid crystal coating type. The film type may include a stretched synthetic resin film, and the liquid crystal coating type may include liquid crystals aligned in a predetermined array. The phase retarder and polarizer may further include a protective film.

[0153] An adhesive member may be disposed between the touch electrode layer and the optical function layer. The adhesive member may be a pressure sensitive adhesive (PSA) or any other adhesive known in the art.

[0154] FIG. 26 is an equivalent circuit diagram of one pixel of a display device 2 according to an embodiment of the present invention.

[0155] 26, each pixel PX may include a pixel circuit PC and a display element, such as an organic light-emitting diode (OLED), connected to the pixel circuit PC. The pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, and a storage capacitor Cst. Each pixel PX may emit light, such as red, green, blue, or white, through the organic light-emitting diode (OLED).

[0156] The second thin film transistor T2 is a switching thin film transistor connected to the scan line SL and the data line DL and can transfer a data voltage input from the data line DL to the first thin film transistor T1 based on a switching voltage input from the scan line SL. The storage capacitor Cst is connected to the second thin film transistor T2 and the driving voltage line PL and can store a voltage corresponding to the difference between the voltage transferred from the second thin film transistor T2 and the first power supply voltage ELVDD supplied to the driving voltage line PL.

[0157] The first thin film transistor T1 is a driving thin film transistor connected to a driving voltage line PL and a storage capacitor Cst and can control a driving current flowing from the driving voltage line PL to an organic light emitting diode (OLED) in response to the voltage stored in the storage capacitor Cst. The organic light emitting diode (OLED) can emit light having a predetermined brightness in response to the driving current. A counter electrode (e.g., a cathode) of the organic light emitting diode (OLED) can be supplied with a second power supply voltage ELVSS.

[0158] 26 illustrates that the pixel circuit PC includes two thin film transistors and one storage capacitor, the present invention is not limited thereto, and the number of thin film transistors and the number of storage capacitors may be varied in various ways depending on the design of the pixel circuit PC.

[0159] Although the present invention has been described based on one embodiment shown in the drawings, it is understood that this is merely an example, and that various modifications and variations of the embodiment are possible. Therefore, the true technical scope of protection of the present invention should be determined by the technical spirit of the claims. [Explanation of symbols]

[0160] 1. Display device manufacturing equipment 11 Stages 12 Laser section 121 Laser emission section 122 Telescope lens part 123 Homogenization section 13 Control Unit

Claims

1. 1. A display device manufacturing apparatus for exposing an exposure area of ​​a photoresist layer disposed on a substrate, comprising: a laser unit that irradiates the exposure area with a plurality of Gaussian laser beams; the plurality of Gaussian laser beams are superimposed in the exposure region to form a superimposed laser beam having a Gaussian distribution of energy intensity; the exposure area includes a first area and a second area surrounding the first area, An apparatus for manufacturing a display device, wherein the energy intensity of the superimposed laser beam is different from that of the first region and the second region.

2. The laser unit 2. The display device manufacturing apparatus according to claim 1, wherein the first region and the second region are irradiated with a plurality of Gaussian laser beams so as to correspond to a plurality of virtual cells arranged in a grid pattern in the exposure region.

3. the exposure region further includes a third region disposed between the first region and the second region; 3. The display device manufacturing apparatus according to claim 2, wherein cells overlapping with the third region among the plurality of cells are not irradiated with the corresponding Gaussian laser beam.

4. 4. The display device manufacturing apparatus according to claim 3, wherein the thickness of the third region is 0.3 [mu]m or more and 0.5 [mu]m or less.

5. Each of the plurality of cells has a rectangular shape, 3. The display device manufacturing apparatus according to claim 2, wherein the length of one side of any one of the plurality of cells is 2 [mu]m or more and 3 [mu]m or less.

6. The display device manufacturing apparatus according to claim 1 , wherein the energy intensity of the superimposed laser beam is higher in the first region than in the second region.

7. 7. The display device manufacturing apparatus according to claim 6, wherein the energy intensity of the superimposed laser beam in the second region is 50% of the energy intensity of the superimposed laser beam in the first region.

8. sequentially disposing a first layer, a second layer, and a photoresist layer on a substrate; an exposure step of exposing an exposure area of ​​the photoresist layer disposed on the substrate, The exposure step comprises: a laser unit irradiating the exposure area with a plurality of Gaussian laser beams; The plurality of Gaussian laser beams are superimposed in the exposure region to form a superimposed laser beam having a Gaussian distribution of energy intensity; the exposure area includes a first area and a second area surrounding the first area, The method for manufacturing a display device, wherein the energy intensity of the superimposed laser beam is different between the first region and the second region.

9. developing the photoresist layer to expose the second layer overlapping the first region; The method of claim 8 , further comprising: etching the first layer and the second layer overlapping the first region.

10. ashing the photoresist layer to expose the second layer overlapping the second region; etching the second layer overlapping the second region; The method of claim 9 , further comprising the step of: removing the photoresist layer.

11. The laser unit The method for manufacturing a display device according to claim 8 , wherein a plurality of Gaussian laser beams are irradiated onto the first region and the second region so as to correspond to a plurality of virtual cells arranged in a grid pattern in the exposure region.

12. the exposure region further includes a third region disposed between the first region and the second region; The method for manufacturing a display device according to claim 11 , wherein cells overlapping with the third region among the plurality of cells are not irradiated with a corresponding Gaussian laser beam.

13. The method for manufacturing a display device according to claim 12 , wherein the third region has a thickness of 0.3 μm or more and 0.5 μm or less.

14. Each of the plurality of cells has a rectangular shape, The method for manufacturing a display device according to claim 11 , wherein the length of one side of any one of the plurality of cells is 2 μm or more and 3 μm or less.

15. The method for manufacturing a display device according to claim 8 , wherein the energy intensity of the superimposed laser beam is higher in the first region than in the second region.

16. The energy intensity of the superimposed laser beam in the second region is The method for manufacturing a display device according to claim 15 , wherein the energy intensity of the superimposed laser beam in the first region is 50%.

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