Substrate transport system and static elimination method

Abstract

To provide a substrate transport system and a static elimination method for eliminating electrostatic charge.SOLUTION: A substrate transport system comprises: a module having a gas supply port for supplying gas into an interior, a gas exhaust port for exhausting gas from the interior, and a substrate support part for supporting a substrate; a vacuum transport module provided adjacent to the module; and a substrate transport apparatus for transporting the substrate between the module and the vacuum transport module, wherein the substrate transport apparatus has a pick capable of holding the substrate, a robot arm for moving the pick, an electrostatic charge detection unit provided on the pick and detecting an amount of electrostatic charge of the substrate, and a static eliminator provided on the pick and eliminating electrostatic charge of the substrate.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a substrate transfer system and a static elimination method. [Background technology]

[0002] Patent Document 1 discloses a robot transport system that is provided in a vacuum chamber, has an electric end effector that generates a static charge to attract a substrate, and includes a horizontal articulated robot arm that transports the substrate between chambers. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2012-514544 Summary of the Invention [Problem to be solved by the invention]

[0004] In one aspect, the present disclosure provides a substrate transport system and a static elimination method for removing charge. [Means for solving the problem]

[0005] In order to solve the above problem, according to one aspect, there is provided a substrate transport system comprising: a module having a gas supply port for supplying gas into the interior, a gas exhaust port for exhausting gas from the interior, and a substrate support part for supporting a substrate; a vacuum transport module provided adjacent to the module; and a substrate transport device for transporting the substrate between the module and the vacuum transport module, wherein the substrate transport device has a pick capable of holding the substrate, a robot arm for moving the pick, a charge detection part provided on the pick for detecting the amount of charge on the substrate, and a static eliminator provided on the pick for neutralizing the substrate. [Effects of the Invention]

[0006] According to one aspect, a substrate transport system and a method for removing static electricity can be provided. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing an example of the overall configuration of a substrate transfer system. [Figure 2] FIG. 2 is a cross-sectional view showing an example of the configuration of a load lock module. [Figure 3] FIG. 2 is a diagram showing an example of the configuration of a pick of the transport device. [Figure 4] 10 is a flowchart illustrating an example of a method for removing charge from a substrate. [Figure 5] FIG. 10 is a diagram showing an example of the relationship between a pick and a substrate. [Figure 6] FIG. 10 is a diagram showing an example of the relationship between a pick and a substrate. [Figure 7] FIG. 10 is a diagram showing an example of the relationship between a pick and a substrate. [Figure 8] FIG. 10 is a diagram showing an example of the relationship between a pick and a substrate. [Figure 9] FIG. 1 is an example of a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] The substrate transfer system 101 will be described with reference to Fig. 1. Fig. 1 is a diagram showing an example of the overall configuration of the substrate transfer system 101. The substrate transfer system 101 shown in Fig. 1 is an apparatus with a cluster structure (multi-chamber type).

[0010] The substrate transfer system 101 in FIG. 1 includes substrate processing modules PM1 to PM6, vacuum transfer modules VTM (Vacuum Transfer Modules), load lock modules LLM1 and LLM2, loader modules LM (Loader Modules), and load ports LP1 to LP3.

[0011] The substrate transfer system 101 is controlled by a control unit 102 and performs predetermined processing on a semiconductor wafer (hereinafter also referred to as a "substrate W"), which is an example of a substrate.

[0012] The substrate processing modules PM1 to PM6 are disposed adjacent to the vacuum transfer module VTM. The substrate processing modules PM1 to PM6 are also collectively referred to as substrate processing modules PM. The substrate processing modules PM1 to PM6 and the vacuum transfer module VTM are connected by opening and closing gate valves GV. Each of the substrate processing modules PM1 to PM6 has a substrate support 11 that supports a substrate W, and is depressurized to a predetermined vacuum atmosphere within which the substrate W is subjected to processes such as etching, film formation, cleaning, and ashing.

[0013] The vacuum transfer module VTM has a vacuum (reduced pressure) transfer chamber. A transfer device 500 for transferring a substrate W is arranged inside the vacuum transfer module VTM. The transfer device 500 has two robot arms 510, 520 that can bend, stretch, and rotate freely. Picks 511, 521 are attached to the tip of each robot arm 510, 520. The transfer device 500 can hold a substrate W on each of the picks 511, 521, and transfers the substrate W between the substrate processing modules PM1 to PM6 and the vacuum transfer module VTM in response to the opening and closing of the gate valve GV. The transfer device 500 also transfers the substrate W between the vacuum transfer module VTM and the load lock modules LLM1, LLM2 in response to the opening and closing of the gate valve GV. The modules may include substrate processing modules PM and load lock modules.

[0014] The load lock modules LLM1 and LLM2 are provided between the vacuum transfer module VTM and the loader module LM. The load lock modules LLM1 and LLM2 are configured to be switchable between an atmospheric atmosphere and a vacuum atmosphere. This allows a substrate W to be transferred from the atmospheric loader module LM to the vacuum transfer module VTM, or from the vacuum transfer module VTM to the atmospheric loader module LM. In the substrate transfer system 101 shown in FIG. 1, the load lock modules LLM1 and LLM2 are arranged side by side in the horizontal direction (lateral direction) on one side wall of the vacuum transfer module VTM. A door valve DV is provided between the load lock modules LLM1 and LLM2 and the loader module LM.

[0015] The loader module LM is provided with load ports LP1 to LP3. FOUPs (Front Opening Unified Pods) containing, for example, 25 substrates W or empty FOUPs are placed on the load ports LP1 to LP3. The loader module LM loads substrates W unloaded from the FOUPs in the load ports LP1 to LP3 into one of the load lock modules LLM1, LLM2, and loads substrates W unloaded from one of the load lock modules LLM1, LLM2 into the FOUP.

[0016] The control unit 102 has a central processing unit (CPU) 102a, a read-only memory (ROM) 102b, a random access memory (RAM) 102c, and a hard disk drive (HDD) 102d. The control unit 102 may have other storage areas such as a solid state drive (SSD) in addition to the HDD 102d. Recipes in which process procedures, process conditions, transport conditions, etc. are set are stored in the storage areas such as the HDD 102d and RAM 102c.

[0017] The CPU 102a controls the processing of the substrate W in the substrate processing module PM in accordance with a recipe, and controls the transport of the substrate W. The HDD 102d and the RAM 102c may store programs for executing, for example, a substrate transport process, a cleaning process, an exhaust control process, etc. These programs may be provided by being stored in a storage medium, or may be provided from an external device via a network.

[0018] The numbers of substrate processing modules PM, load lock modules LLM, and load ports LP are not limited to those shown in this embodiment, but may be one or more.

[0019] With this configuration, the substrate transfer system 101 can attach FOUPs containing substrates W or empty FOUPs to the load ports LP1 to LP3. The substrate transfer system 101 can also remove unprocessed substrates W stored in FOUPs and transport them to each of the substrate processing modules PM1 to PM6 via the loader module LM, load lock modules LLM1 and LLM2, and vacuum transfer module VTM. The substrate transfer system 101 can also perform desired processing on the substrates W in each of the substrate processing modules PM1 to PM6. The substrate transfer system 101 can also remove processed substrates W from each of the substrate processing modules PM1 to PM6 and store them in a FOUP via the vacuum transfer module VTM, load lock modules LLM1 and LLM2, and loader module LM.

[0020] 2 is a cross-sectional view showing an example of the configuration of the load lock modules LLM1 and LLM2. The load lock modules LLM1 and LLM2 each include a chamber 200, a substrate support 210, a purge gas supply system 220, and an exhaust system 230.

[0021] The chamber 200 is provided with a door valve DV that opens and closes an opening that communicates with the loader module LM (see FIG. 1), and a gate valve GV that opens and closes an opening that communicates with the vacuum transfer module VTM (see FIG. 1).

[0022] A substrate support part 210 that supports the substrate W is provided in the chamber 200. The substrate support part 210 is provided with, for example, lift pins 211 that can be raised and lowered. By raising the lift pins 211, the substrate W is supported by the lift pins 211. However, the configuration of the substrate support part 210 provided in the chamber 200 is not limited to this.

[0023] The purge gas supply system 220 is connected to, for example, a gas supply port 220a provided at the bottom of the chamber 200 and supplies a purge gas into the chamber 200. The purge gas may be, for example, N2 gas. The exhaust system 230 may be connected to, for example, a gas exhaust port 230a provided at the bottom of the chamber 200. The exhaust system 230 may include a pressure regulating valve and a vacuum pump. The pressure in the chamber 200 is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0024] 3A and 3B are diagrams showing an example of the configuration of a pick 511 of the transport device 500. FIG. 3A is an example of a top view of the pick 511. FIG. 3B is an example of a side view of the pick 511. Note that in FIG. 3, the pick 511 will be used as an example for explanation. The pick 521 has the same configuration as the pick 511, and therefore, a duplicated explanation will be omitted.

[0025] The pick 511 has a substrate support part 512 , a charge detection part 513 , and a static eliminator 514 .

[0026] The substrate support portion 512 is formed on the upper surface side of the pick 511 and supports the substrate W by coming into contact with the rear surface of the substrate W.

[0027] The charge detection unit 513 is a non-contact sensor that detects the amount of charge on the substrate W without coming into contact with the substrate W. A Kelvin probe, for example, can be used as the charge detection unit 513. The charge detection unit 513 is connected to a measuring instrument 530, and a detection signal detected by the charge detection unit 513 is transmitted to the measuring instrument 530. The measuring instrument 530 detects the amount of charge on the substrate W based on the detection signal detected by the charge detection unit 513. The detected amount of charge on the substrate W is output to the control unit 102.

[0028] The static eliminator 514 eliminates static electricity from the substrate W. For example, the static eliminator 514 includes an ion generating unit that ionizes gas to generate positive ions and / or negative ions. Specifically, the static eliminator 514 may use, for example, an electrode. The static eliminator 514 is connected to a power source 540.

[0029] Here, a molecular flow of N2 gas is supplied to a load lock module (LLM) in a vacuum atmosphere. By applying a voltage from a power supply 540 to a pair of electrodes serving as a static eliminator 514, a discharge (corona discharge) occurs due to the potential difference between the electrodes. This generates ions from the N2 gas.

[0030] If the substrate W is electrically charged, particles may be attracted to the substrate W by Coulomb force during transportation of the substrate W. Furthermore, if the substrate W is electrically charged, this may affect the electrostatic attraction of the substrate W to the substrate support 11 and the electrostatic release of the substrate W from the substrate support 11 in the substrate processing module PM (the plasma processing apparatus 1 described later).

[0031] In contrast to this, the substrate transfer system 101 shown in FIGS. 1 to 3 has a configuration for removing the charge on the substrate W.

[0032] A method for removing charge from a substrate W will be described with reference to Figures 4 to 7. Figure 4 is a flowchart illustrating an example of a method for removing charge from a substrate W. In the following description, the direction in which the pick 511 moves when it is inserted from the vacuum transfer module VTM to the load lock module LLM will be described as the forward direction of the pick 511. Also, the direction in which the pick 511 moves when it is withdrawn from the load lock module LLM to the vacuum transfer module VTM will be described as the retreat direction of the pick 511.

[0033] In step S101, a substrate W is supported in the load lock module LLM. The control unit 102 controls the loader module LM to transfer the substrate W from the FOUP of the load port LP to the substrate support portion 210 of the load lock module LLM. As a result, the substrate W is supported on the substrate support portion 210 (lift pins 211), as shown in FIG. 2. The control unit 102 closes the door valve DV and controls the exhaust system 230 to maintain a vacuum atmosphere in the load lock module LLM. Note that even when the interior of the chamber 200 of the load lock module LLM is in a vacuum atmosphere, N2 gas is supplied into the chamber 200 from the purge gas supply system 220.

[0034] The relationship between the pick 511 and the substrate W in step S101 will be described with reference to Fig. 5. Fig. 5 is a diagram showing an example of the relationship between the pick 511 and the substrate W. Fig. 5(a) shows a top view of the pick 511 and the substrate W, Fig. 5(b) shows a side view of the pick 511 and the substrate W, and Fig. 5(c) shows the amount of charge detected by the charge detection unit 513.

[0035] Here, the pick 511 is disposed in the vacuum transfer module VTM (see FIG. 1). The substrate W is disposed in the load lock module LLM. In the load lock module LLM, a flow 240 of purge gas (N2 gas) is generated by the purge gas supply system 220 and the exhaust system 230. The flow 240 of purge gas (N2 gas) flows in a direction opposite to the forward direction of the pick 511 (the direction in which the pick 511 is inserted from the vacuum transfer module VTM into the load lock module LLM).

[0036] 4, in step S102, the pick 511 is inserted into the load lock module LLM and the charge amount of the substrate W is detected. The control unit 102 opens the gate valve GV and controls the transfer device 500 to insert the pick 511 from the vacuum transfer module VTM into the load lock module LLM and pass the pick 511 under the substrate W.

[0037] The relationship between the pick 511 and the substrate W in step S102 will be described with reference to Fig. 6. Fig. 6 is a diagram showing an example of the relationship between the pick 511 and the substrate W. Fig. 6(a) shows a top view of the pick 511 and the substrate W, Fig. 6(b) shows a side view of the pick 511 and the substrate W, and Fig. 6(c) shows the amount of charge detected by the charge detection unit 513.

[0038] The robot arm 510 is operated to move the pick 511 forward, and the charge amount (potential) of the substrate W is detected by the charge detection unit 513 provided on the pick 511. As shown in Fig. 6(c), by detecting the charge amount of the substrate W while moving the pick 511 forward, the distribution of the charge amount of the substrate W in the forward direction of the pick 511 is detected.

[0039] Here, since the substrate W is a conductor, a constant amount of charge is detected regardless of the position (sensor position) of the charge detection unit 513 when the amount of charge is measured. For example, a positive charge is detected as shown in graph 611, or a negative charge is detected as shown in graph 613. Furthermore, if a mask, insulating film, or the like for forming a semiconductor device is formed on the substrate W, a charge amount distribution that depends on the sensor position is detected as shown in graph 612.

[0040] 4, in step S103, ions are generated. The control unit 102 controls the power supply 540 to cause the static eliminator 514 to generate ions.

[0041] The relationship between the pick 511 and the substrate W in step S103 will be described with reference to Fig. 7. Fig. 7 is a diagram showing an example of the relationship between the pick 511 and the substrate W. Fig. 7(a) shows a top view of the pick 511 and the substrate W, Fig. 7(b) shows a side view of the pick 511 and the substrate W, and Fig. 7(c) shows the amount of charge detected by the charge detection unit 513.

[0042] Here, the static eliminator 514 is configured to generate ions 700 in the forward direction of the pick 511. The ions 700 generated by the static eliminator 514 diffuse within the chamber 200 and flow toward the substrate W by the flow (molecular flow) 240 of N2 gas (see arrow 701). The ions are then attracted to the charged substrate W by Coulomb force, thereby eliminating static electricity from the substrate W.

[0043] 4, in step S104, the pick 511 is withdrawn from the load lock module LLM, and the amount of charge on the substrate W is detected. The control unit 102 controls the transfer device 500 to move the pick 511 in the direction of withdrawal from the load lock module LLM to the vacuum transfer module VTM, and causes the pick 511 to pass under the substrate W.

[0044] The relationship between the pick 511 and the substrate W in step S104 will be described with reference to Fig. 8. Fig. 8 is a diagram showing an example of the relationship between the pick 511 and the substrate W. Fig. 8(a) shows a top view of the pick 511 and the substrate W, Fig. 8(b) shows a side view of the pick 511 and the substrate W, and Fig. 8(c) shows the amount of charge detected by the charge detection unit 513.

[0045] By retracting the pick 511, the charge detection unit 513 provided on the pick 511 detects the potential of the substrate W. As shown in FIG. 8(c), for example, the positively charged potential of the substrate W is neutralized as shown in graph 621, or the negatively charged potential of the substrate W is neutralized as shown in graph 622.

[0046] The static eliminator 514 may generate ions even during the process of retracting the pick 511 shown in step S104.

[0047] 4, in step S105, the control unit 102 determines whether or not neutralization of the substrate W has been completed based on the charge amount of the substrate W measured in step S104 (see FIG. 8(c)). For example, the control unit 102 determines that neutralization of the substrate W has been completed when the monitor value of the charge amount measured by the measuring device 530 in step S104 becomes zero. Alternatively, the control unit 102 determines that neutralization of the substrate W has been completed when the monitor value of the charge amount measured by the measuring device 530 in step S104 becomes less than a predetermined threshold. If neutralization of the substrate W has not been completed (S105: NO), the process by the control unit 102 returns to step S102. If neutralization has been completed (S105: YES), the process by the control unit 102 proceeds to step S106.

[0048] In step S106, the control unit 102 controls the transfer device 500 to insert the pick 511 into the load lock module LLM, and the pick 511 holds the substrate W.

[0049] In step S107, the control unit 102 controls the transfer device 500 to withdraw the pick 511 from the load lock module LLM and transfer the substrate W from the load lock module LLM to the vacuum transfer module VTM. The transferred substrate W is then transferred to the substrate processing module PM.

[0050] This allows the substrate W to be neutralized. This prevents particles and the like from adhering to the substrate W during transport. Furthermore, when electrostatically attracting the substrate W to the substrate support part 11, the substrate W can be attracted appropriately. Furthermore, even after the attraction by the electrostatic chuck of the substrate support part 11 is released, the substrate W can be prevented from being attracted to the substrate support part 11 due to residual charges on the substrate W.

[0051] Furthermore, when ions are generated in step S103, the amount of ions generated may be controlled based on the amount of charge on the substrate W detected in step S102. That is, the control unit 102 may adjust the power supplied from the power supply 540 to the static eliminator 514 based on the amount of charge on the substrate W detected in step S102. The control unit 102 may also control the supply amount (gas flow rate) of N2 gas supplied by the purge gas supply system 220 based on the amount of charge on the substrate W detected in step S102. The control unit 102 may also control the pressure of N2 gas in the chamber 200 controlled by the exhaust system 230 based on the amount of charge on the substrate W detected in step S102.

[0052] In the case where an unprocessed substrate W is transported from the FOUP of the load port LP to the loader module LM, the load lock module LLM, the vacuum transfer module VTM, and the substrate processing module PM in that order, the transport device 500 has been described as performing the de-electrification process (S102 to S105) before transporting the substrate W from the load lock module LLM to the vacuum transfer module VTM, but this is not limited to this.

[0053] For example, in the case where a processed substrate W is transported from a substrate processing module PM to a vacuum transfer module VTM, a load lock module LLM, a loader module LM, and a FOUP in a load port LP in that order, the transport device 500 may be configured to perform a charge removal process (S102 to S105) after transporting the substrate W from the vacuum transfer module VTM to the load lock module LLM.

[0054] Furthermore, although the electricity removal process (S102 to S105) has been described as being performed in the load lock module LLM, this is not limiting. It may also be performed in the substrate processing module PM. That is, when an unprocessed substrate W is transferred from a FOUP on the load port LP to the loader module LM, the load lock module LLM, the vacuum transfer module VTM, and the substrate processing module PM in this order, the transfer apparatus 500 may be configured to perform the electricity removal process (S102 to S105) after transferring the substrate W from the vacuum transfer module VTM to the substrate processing module PM. Furthermore, when a processed substrate W is transferred from the substrate processing module PM to the vacuum transfer module VTM, the load lock module LLM, the load module LM, and the FOUP on the load port LP in this order, the transfer apparatus 500 may be configured to perform the electricity removal process (S102 to S105) before transferring the processed substrate W from the substrate processing module PM to the vacuum transfer module VTM.

[0055] Furthermore, although the description has been given assuming that the charge detector 513 and the charge neutralizer 514 are provided on the pick of the transfer device 500 of the vacuum transfer module VTM, this is not limiting. The charge detector and the charge neutralizer may also be provided on the pick of the transfer device of the loader module LM. Here, N2 gas is supplied into the FOUP of the load port LP. The charge neutralizer provided on the pick of the transfer device of the loader module LM may be configured to neutralize the substrate W by ionizing the N2 gas. In this way, for example, the charge neutralization process may be performed on an unprocessed substrate W before it is removed from the FOUP of the load port LP. Alternatively, the charge neutralization process may be performed on a processed substrate W after it is placed in the FOUP of the load port LP.

[0056] Next, a method for removing electricity from an electrostatic chuck that electrostatically attracts a substrate W in the substrate support 11 of the substrate processing module PM will be described with reference to Fig. 9. Here, a plasma processing system including a plasma processing apparatus 1 will be described as an example of the substrate processing module PM.

[0057] An example of the configuration of a plasma processing system will be described below. Fig. 9 is an example of a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus 1.

[0058] The plasma processing system includes a capacitively coupled plasma processing device 1 and a controller 2. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing device 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas into the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0059] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0060] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF (Radio Frequency) power supply 31 and / or a DC (Direct Current) power supply 32 (described later) may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal (described later) is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as the lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0061] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0062] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a. The heat transfer gas supply unit includes a supply path 15 provided in the substrate support 11. The heat transfer gas is supplied to the supply path 15 from a heat transfer gas supply source 14. An electrode 17 is provided in the supply path 15. The electrode 17 is connected to a power source 16.

[0063] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0064] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0065] Furthermore, gas supply unit 20 supplies N2 gas as a purge gas from gas supply port 13a into plasma processing chamber 10 in a vacuum atmosphere.

[0066] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0067] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0068] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0069] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0070] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0071] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0072] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0073] The control unit 2 may be provided integrally with the control unit 102, may be provided as one function of the control unit 102, or may be provided separately from the control unit 102.

[0074] If the ceramic member 1111a of the electrostatic chuck 1111 is charged, particles may be attracted by Coulomb force to the surface (substrate support surface, ring support surface, etc.) of the electrostatic chuck 1111. Furthermore, if the ceramic member 1111a of the electrostatic chuck 1111 is charged, this may affect the electrostatic attraction of the substrate W and the release of the electrostatic attraction of the substrate W.

[0075] For this reason, the charge amount of the ceramic member 1111a of the electrostatic chuck 1111 may be detected by a charge detection unit 513 provided on the pick 511 of the transfer device 500. Furthermore, if the ceramic member 1111a of the electrostatic chuck 1111 is charged (for example, if the charge amount exceeds a certain threshold), a charge removal process may be performed on the ceramic member 1111a of the electrostatic chuck 1111.

[0076] The static eliminator 514 provided on the pick 511 of the transport device 500 may be used to remove static electricity from the ceramic member 1111a.

[0077] The method for removing static electricity from the ceramic member 1111a is not limited to this. Alternatively, N2 gas may be supplied from a heat transfer gas supply source 14, which supplies gas to the rear surface of the substrate W, to a supply path 15 provided in the substrate support part 11, and a power supply 16 may apply a voltage to an electrode 17 provided in the supply path 15, thereby generating ions and removing static electricity.

[0078] Alternatively, the ceramic member 1111a may be de-electrified by generating plasma in the plasma processing chamber 10.

[0079] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) a module having a gas supply port for supplying gas into the interior, a gas exhaust port for exhausting gas from the interior, and a substrate support portion for supporting a substrate; a vacuum transfer module disposed adjacent to the module; a substrate transfer apparatus for transferring the substrate between the module and the vacuum transfer module, The substrate transport device is a pick capable of holding the substrate; a robot arm that moves the pick; a charge detection unit provided on the pick and configured to detect the amount of charge on the substrate; a static eliminator provided on the pick for eliminating static electricity from the substrate; Substrate transport system. (Appendix 2) The static eliminator is an ion generating unit that generates ions of the gas; 2. The substrate transfer system of claim 1. (Appendix 3) The ion generation unit includes an electrode provided on the pick. 3. The substrate transfer system of claim 2. (Appendix 4) a power source connected to the electrodes; 4. The substrate transfer system of claim 3. (Appendix 5) The ion generation unit is configured to generate the ions in the forward movement direction of the pick. 5. A substrate transfer system according to any one of claims 2 to 4. (Appendix 6) The gas flows in the module in a direction opposite to the direction of advancement of the pick. 6. A substrate transfer system according to any one of claims 2 to 5. (Appendix 7) The charge detection unit includes a Kelvin probe provided on the pick. 7. A substrate transfer system according to any one of claims 1 to 6. (Appendix 8) further comprising a measuring instrument connected to the Kelvin probe; 8. The substrate transfer system of claim 7. (Appendix 9) The gas supplied from the gas supply port is N2 gas. 9. A substrate transfer system according to any one of claims 1 to 8. (Appendix 10) the module is a load lock module; 10. A substrate transfer system according to any one of claims 1 to 9. (Appendix 11) the module is a substrate processing module; 10. A substrate transfer system according to any one of claims 1 to 9. (Appendix 12) A static elimination method for a substrate transfer system including: a module having a gas supply port for supplying gas into an interior thereof, a gas exhaust port for discharging gas from the interior thereof, and a substrate support portion for supporting a substrate; a vacuum transfer module provided adjacent to the module; and a substrate transfer device having a pick capable of holding the substrate and transferring the substrate between the module and the vacuum transfer module, comprising: supporting the substrate with the substrate support; a step of moving the pick in a direction of inserting the pick into the module and detecting the amount of charge on the substrate by a charge detection unit provided on the pick that detects the amount of charge on the substrate; generating ions in an ion generating unit provided on the pick for generating ions of the gas to neutralize the substrate; moving the pick in a direction to remove it from the module, and detecting the amount of charge on the substrate with the charge detection unit. Static elimination method.

[0080] The present invention is not limited to the configurations described in the above embodiments, but may be combined with other elements, etc. These aspects can be changed without departing from the spirit of the present invention, and can be appropriately determined depending on the application form. [Explanation of symbols]

[0081] W substrate PM1~PM6 Substrate processing modules (modules) VTM Vacuum Transfer Module LLM1, LLM2 Load Lock Module (Module) LM Loader Module LP1~LP3 Loading Port GV Gate Valve DV Door Valve 10 Plasma Processing Chamber 10e,230a Gas outlet 11 Substrate support 13a, 220a Gas supply port 101 Substrate transport system 102 Control section 200 Chambers 210 Substrate support 211 Lift Pin 220 Purge Gas Supply System 230 exhaust system 500 conveyor 510,520 Robot Arm 511,521 picks 512 Substrate support 513 Charge detection unit 514 Static eliminator 530 Measuring instruments 540 Power supply 700 ions

Claims

1. a module having a gas supply port for supplying gas into the interior, a gas exhaust port for exhausting gas from the interior, and a substrate support portion for supporting a substrate; a vacuum transfer module disposed adjacent to the module; a substrate transfer apparatus for transferring the substrate between the module and the vacuum transfer module, The substrate transport device is a pick capable of holding the substrate; a robot arm that moves the pick; a charge detection unit provided on the pick and configured to detect the amount of charge on the substrate; a static eliminator provided on the pick for eliminating static electricity from the substrate; Substrate transport system.

2. The static eliminator is an ion generating unit that generates ions of the gas; The substrate transfer system according to claim 1 .

3. The ion generation unit includes an electrode provided on the pick. The substrate transfer system according to claim 2 .

4. a power source connected to the electrodes; The substrate transfer system according to claim 3 .

5. The ion generation unit is configured to generate the ions in the forward movement direction of the pick. The substrate transfer system according to claim 2 .

6. The gas flows in the module in a direction opposite to the direction of advancement of the pick. The substrate transfer system according to claim 2 .

7. The charge detection unit includes a Kelvin probe provided on the pick. The substrate transfer system according to any one of claims 1 to 6.

8. further comprising a measuring instrument connected to the Kelvin probe; The substrate transfer system according to claim 7 .

9. The gas supplied from the gas supply port is N ２ It is a gas, The substrate transfer system according to any one of claims 1 to 6.

10. the module is a load lock module; The substrate transfer system according to any one of claims 1 to 6.

11. the module is a substrate processing module; The substrate transfer system according to any one of claims 1 to 6.

12. A static elimination method for a substrate transfer system including: a module having a gas supply port for supplying gas into an interior thereof, a gas exhaust port for discharging gas from the interior thereof, and a substrate support portion for supporting a substrate; a vacuum transfer module provided adjacent to the module; and a substrate transfer device having a pick capable of holding the substrate and transferring the substrate between the module and the vacuum transfer module, comprising: supporting the substrate with the substrate support; a step of moving the pick in a direction of inserting the pick into the module and detecting the amount of charge on the substrate by a charge detection unit provided on the pick that detects the amount of charge on the substrate; generating ions in an ion generating unit provided on the pick for generating ions of the gas to neutralize the substrate; moving the pick in a direction to remove it from the module, and detecting the amount of charge on the substrate with the charge detection unit. Static elimination method.

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