Method for manufacturing light-emitting device and light-emitting device

Abstract

To provide a method for manufacturing a light-emitting device and a light-emitting device capable of reducing light absorption.SOLUTION: A method for manufacturing a light-emitting device comprises the steps of: preparing a first structure including a substrate having a first surface and a second surface positioned on an opposite side of the first surface, a plurality of semiconductor light-emitting portions arranged on the second surface of the substrate, and a non-light-emitting semiconductor portion arranged in a region on the second surface where the plurality of semiconductor light-emitting portions are not arranged; arranging the first structure on a support member by making the second surface face the support member; arranging a first resin member between the first structure and the support member; and separating the substrate from the plurality of semiconductor light-emitting portions and the semiconductor portion by irradiating the plurality of semiconductor light-emitting portions and the semiconductor portion with a laser beam from a first surface side of the substrate after arranging the first resin member.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a light emitting device and a light emitting device. [Background technology]

[0002] In a method for manufacturing a light emitting device, for example, as disclosed in Patent Document 1, a sapphire substrate on which a light emitting device is provided is peeled off by laser lift-off. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-163945 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a method for manufacturing a light emitting device that can reduce light absorption, and a light emitting device. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a method for manufacturing a light emitting device includes the steps of: preparing a first structure having a substrate having a first surface and a second surface opposite the first surface, a plurality of semiconductor light emitting units arranged on the second surface of the substrate, and a non-light emitting semiconductor unit arranged in an area of ​​the second surface where the plurality of semiconductor light emitting units are not arranged; placing the second surface opposite a support member and arranging the first structure on the support member; arranging a first resin member between the first structure and the support member; and, after arranging the first resin member, separating the substrate from the plurality of semiconductor light emitting units and the semiconductor unit by irradiating laser light from the first surface side of the substrate toward the plurality of semiconductor light emitting units and the semiconductor unit.

[0006] According to one aspect of the present disclosure, a light emitting device comprises a plurality of semiconductor light emitting units each having a light emitting surface, a first resin member having a first resin surface and arranged between the plurality of semiconductor light emitting units so that the light emitting surface is exposed at the first resin surface, and a non-light emitting semiconductor unit having a lower surface and an upper surface, the lower surface being covered by the first resin member and the upper surface being exposed at the first resin surface, wherein the optical reflectivity of the first resin member in contact with the lower surface of the semiconductor unit is higher than the optical reflectivity of the first resin surface. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to provide a method for manufacturing a light emitting device and a light emitting device that can reduce light absorption. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic plan view of a light emitting device according to an embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 2 is an enlarged cross-sectional view of a portion of the light-emitting device according to the embodiment. [Figure 4] FIG. 2 is an enlarged cross-sectional view of a portion of the light-emitting device according to the embodiment. [Figure 5] FIG. 2 is a schematic plan view illustrating one step of a method for manufacturing a light emitting device according to an embodiment. [Figure 6] FIG. 2 is a schematic plan view illustrating one step of a method for manufacturing a light emitting device according to an embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view taken along line VII-VII in FIG. [Figure 8] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 9] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 10] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 11]5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 12] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 13] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 14] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 15] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 16] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 17] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 18] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 19] 5A to 5C are schematic cross-sectional views illustrating a step in a method for manufacturing a light emitting device according to an embodiment. [Figure 20] 10A and 10B are schematic cross-sectional views illustrating a step in a manufacturing method of a light emitting device according to a modified example of the embodiment. [Figure 21] 10A and 10B are schematic cross-sectional views illustrating a step in a manufacturing method of a light emitting device according to a modified example of the embodiment. [Figure 22] 10A and 10B are schematic cross-sectional views illustrating a step in a manufacturing method of a light emitting device according to a modified example of the embodiment. [Figure 23] FIG. 10 is a schematic plan view of a light emitting device according to a modified example of the embodiment. [Figure 24] FIG. 24 is a schematic cross-sectional view taken along line XXIV-XXIV in FIG. 23. [Figure 25] FIG. 25 is a schematic cross-sectional view illustrating one step in the method for manufacturing the light emitting device shown in FIGS. 23 and 24. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, a light-emitting device and a method for manufacturing a light-emitting device according to an embodiment of the present disclosure will be described with reference to the drawings. The embodiments shown below are illustrative of a light-emitting device and a method for manufacturing a light-emitting device for embodying the technical concepts of the present disclosure, and are not limited thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of components described in the embodiments are not intended to limit the scope of the present disclosure, but are merely illustrative examples. Note that the size, positional relationship, etc. of components shown in each drawing may be exaggerated for clarity. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed description will be omitted as appropriate. Furthermore, as cross-sectional views, end views showing only the cut surface may be used.

[0010] In the following description, terms indicating specific directions or positions (e.g., "above," "below," and other terms including these terms) may be used. However, these terms are used merely to facilitate understanding of relative directions or positions in the referenced drawings. As long as the relative direction or position relationship indicated by terms such as "above" and "below" in the referenced drawings is the same, the arrangement in drawings other than those disclosed herein, actual products, etc., does not need to be the same as in the referenced drawings. In this specification, the positional relationship expressed as "above (or below)" includes, for example, when two components are assumed to exist, a case in which the two components are in contact with each other, and a case in which the two components are not in contact with each other and one component is located above (or below) the other component. Furthermore, in this specification, unless otherwise specified, a component covering an object to be covered includes a case in which the component is in contact with the object to be covered and directly covers the object to be covered, and a case in which the component is not in contact with the object to be covered and indirectly covers the object to be covered.

[0011] In the figures shown below, directions are indicated by the X-axis, Y-axis, and Z-axis. The direction along the X-axis is the first direction X, which indicates a predetermined direction within the light-emitting surface of the light-emitting device according to the embodiment. The direction along the Y-axis is the second direction Y, which is perpendicular to the first direction X within the light-emitting surface. The light-emitting surface of the light-emitting device is parallel to the XY plane. The direction along the Z-axis is the third direction Z, which is perpendicular to the light-emitting surface of the light-emitting device.

[0012] [Light-emitting device] A light emitting device 1 according to an embodiment will be described with reference to Figures 1 to 3. The light emitting device 1 includes a light source unit 100. The light source unit 100 includes a plurality of semiconductor light emitting units 20, a first resin member 40, and a non-light emitting semiconductor unit 30.

[0013] <Semiconductor light-emitting unit> The semiconductor light emitting unit 20 has a semiconductor structure 10 including an active layer. The semiconductor light emitting unit 20 has a light emitting surface 20A, which is the main surface for extracting light emitted by the active layer.

[0014] The semiconductor structure 10 includes a nitride semiconductor. In this specification, a nitride semiconductor is, for example, In x Al y Ga 1-x-y The term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y are varied within the respective ranges in the chemical formula represented by N (0≦x≦1, 0≦y≦1, x+y≦1). In addition, nitride semiconductors also include those in the above chemical formula that further contain Group V elements other than N (nitrogen), and those that further contain various elements added to control various physical properties such as the conductivity type of the semiconductor.

[0015] The active layer has, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The light emitted by the active layer is, for example, visible light or ultraviolet light. The multiple semiconductor light emitting units 20 may be composed of semiconductor light emitting units 20 having the same emission peak wavelength, or may include semiconductor light emitting units 20 having different emission peak wavelengths. For example, multiple semiconductor light emitting units 20 whose optical characteristics (brightness, chromaticity, etc.) vary within a predetermined range are selected and used in the light emitting device 1.

[0016] An electrode 21 may be arranged on the surface of the semiconductor light emitting unit 20 opposite to the light emitting surface 20A in the third direction Z. At least two electrodes 21 are arranged for one semiconductor light emitting unit 20. One of the two electrodes 21 functions as an anode electrode, and the other functions as a cathode electrode.

[0017] The semiconductor light emitting unit 20 does not have a substrate on the semiconductor structure 10. This reduces the amount of light emitted by the active layer that is reflected by the substrate and returns to the semiconductor structure 10, thereby improving the light extraction efficiency. The substrate here is, for example, a substrate for growing the semiconductor structure 10.

[0018] 1 shows, for example, nine semiconductor light emitting units 20 arranged in a matrix in the first direction X and the second direction Y. The arrangement and number of the semiconductor light emitting units 20 are not limited to this and can be changed depending on the light emitting characteristics required of the light emitting device 1.

[0019] The light emitting device 1 can be used, for example, as a flash light source for an imaging device. The imaging device can be mounted, for example, on a mobile communication terminal. When the light emitting device 1 is used as a flash light source for an imaging device, it can emit light by switching between, for example, a narrow-angle mode in which only the semiconductor light emitting unit 20 located in the center in a planar view emits light, and a wide-angle mode in which all of the semiconductor light emitting units 20 emit light. The narrow-angle mode has a narrower light irradiation angle than the wide-angle mode. Since the light emitting device 1 can switch the emitted light between the narrow-angle mode and the wide-angle mode, it is possible to perform photography according to the imaging mode, such as telephoto or close-up, of the imaging device. Furthermore, in the wide-angle mode, the irradiation angle can be adjusted by controlling the light emission intensity of the multiple semiconductor light emitting units 20.

[0020] <First resin member> The first resin member 40 holds the plurality of semiconductor light emitting units 20 and the semiconductor unit 30. The first resin member 40 is disposed between adjacent semiconductor light emitting units 20 and between the semiconductor light emitting units 20 and the semiconductor unit 30, and covers the semiconductor light emitting units 20 and the semiconductor unit 30. The first resin member 40 has a first resin surface 41 and a second resin surface 42 located on the opposite side of the first resin surface 41 in the third direction Z. The first resin member 40 is not disposed on the light emitting surface 20A of the semiconductor light emitting units 20, but is disposed between the plurality of semiconductor light emitting units 20 so that the light emitting surface 20A is exposed at the first resin surface 41. The first resin member 40 covers the electrode 21.

[0021] The first resin member 40 has insulating properties. The first resin member 40 includes a resin and a light-reflecting substance contained in the resin. The first resin member 40 is reflective to light emitted by the active layer. As the resin of the first resin member 40, for example, a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, an epoxy-modified resin, or a phenolic resin can be used. Among these, a silicone resin or a modified resin thereof, which has excellent light resistance and heat resistance, is particularly suitable. As the light-reflecting substance of the first resin member 40, for example, titanium oxide, silicon oxide, etc. can be used.

[0022] By disposing the light-reflective first resin member 40 between adjacent semiconductor light emitting units 20, when one semiconductor light emitting unit 20 emits light and the semiconductor light emitting unit 20 adjacent to the one semiconductor light emitting unit 20 does not emit light, it is possible to reduce the amount of light emitted from the one semiconductor light emitting unit 20 being irradiated onto the non-emitting semiconductor light emitting unit 20. This allows the light emitting device 1 to have high contrast (the brightness ratio between the light emitting area and the non-light emitting area).

[0023] Moreover, the first resin member 40 is located outside the semiconductor light emitting units 20 in a plan view, which reduces leakage of light outside the area where the semiconductor light emitting units 20 are arranged, resulting in a light emitting device 1 with high contrast.

[0024] <Semiconductor Department> The semiconductor section 30 is non-light-emitting. For example, the semiconductor section 30 does not include an active layer. Furthermore, the semiconductor section 30 does not have any electrodes arranged thereon for connection to an external circuit. The semiconductor section 30 is made up of a part of the semiconductor layer (the n-side semiconductor layer, as described below) that constitutes the semiconductor structure 10 of the semiconductor light emitting section 20, and is transparent to the light emitted by the active layer of the semiconductor light emitting section 20.

[0025] As shown in FIG. 1, the semiconductor section 30 is located outside the plurality of semiconductor light emitting sections 20 in plan view. In the example shown in FIG. 1, two sections extending in the first direction X and two sections extending in the second direction Y are continuous. The semiconductor section 30 surrounds the plurality of semiconductor light emitting sections 20 in plan view. For example, the semiconductor section 30 continuously surrounds the plurality of semiconductor light emitting sections 20 in plan view. For example, the area surrounded by the semiconductor section 30 is rectangular in plan view.

[0026] 2, the semiconductor part 30 has a lower surface 32 and an upper surface 31 located on the opposite side of the lower surface 32 in the third direction Z. The lower surface 32 is covered with a first resin member 40. The first resin member 40 is located between the lower surface 32 and a second resin surface 42. The first resin member 40 is not disposed on the upper surface 31, and the upper surface 31 is exposed from the first resin member 40.

[0027] The light source unit 100, which includes a plurality of semiconductor light emitting units 20, a first resin member 40, and a semiconductor unit 30, is separated from a substrate, as described below. The light source unit 100 and the substrate are separated from each other by a laser lift-off method. At this time, the first resin surface 41 of the first resin member 40 is discolored by irradiation with laser light, resulting in a decrease in optical reflectance. According to this embodiment, the semiconductor unit 30 is disposed in an area other than the area where the semiconductor light emitting units 20 are disposed, thereby reducing the area of ​​the first resin surface 41 in the light source unit 100. This reduces optical absorption in the light emitting device 1. The optical reflectance of the first resin member 40 in contact with the lower surface 32 of the semiconductor unit 30 is higher than the optical reflectance of the first resin surface 41. For example, for light with an emission peak wavelength of 450 nm, the optical reflectance of the first resin member 40 in contact with the lower surface 32 of the semiconductor unit 30 is 70% or more, while the optical reflectance of the first resin surface 41 is 30% or less.

[0028] In a plan view, the width of the semiconductor section 30 (the width in the second direction Y of the portion extending in the first direction X and the width in the first direction X of the portion extending in the second direction Y) is greater than the distance between the plurality of semiconductor light emitting sections 20 (the distance between adjacent semiconductor light emitting sections 20 in the first direction X and the distance between adjacent semiconductor light emitting sections 20 in the second direction Y). By arranging the semiconductor section 30 in an area on the first resin surface 41 side of the first resin member 40 that is wider than the area between adjacent semiconductor light emitting sections 20, the area of ​​the first resin surface 41 can be significantly reduced, and the area of ​​the first resin member 40's portion that is susceptible to discoloration by laser light can be reduced. As a result, light absorption can be easily reduced. The width of the semiconductor section 30 is, for example, 30 μm or more and 200 μm or less.

[0029] The distance between adjacent semiconductor light emitting sections 20 is, for example, 1 μm or more and 30 μm or less. By setting the distance between adjacent semiconductor light emitting sections 20 within this range, it becomes possible to use semiconductor light emitting sections 20 with a large area in a plan view while achieving a light emitting device 1 with high contrast, thereby improving the brightness of the light emitting device 1.

[0030] FIG. 3 shows a specific example of the semiconductor light emitting section 20 and the semiconductor section 30. In FIG.

[0031] The semiconductor structure 10 in the semiconductor light emitting unit 20 has an n-side semiconductor layer 11, a p-side semiconductor layer 13, and an active layer 12 located between the n-side semiconductor layer 11 and the p-side semiconductor layer 13 in the third direction Z. The surface of the n-side semiconductor layer 11 opposite to the surface on which the active layer 12 is located serves as the light emitting surface 20A. The light emitting surface 20A and the upper surface 31 of the semiconductor unit 30 may be covered with a protective film.

[0032] The light emitting surface 20A of the semiconductor light emitting unit 20, the first resin surface 41 of the first resin member 40, and the upper surface 31 of the semiconductor unit 30 are all on the same XY plane.

[0033] The semiconductor section 30 does not include the p-side semiconductor layer 13 or the active layer 12, and is made of the n-side semiconductor layer 11. Therefore, the thickness of the semiconductor section 30 in the third direction Z is thinner than the thickness of the semiconductor structure 10 of the semiconductor light emitting section 20 in the third direction Z. This makes it possible to reduce light absorption by the semiconductor section 30.

[0034] In the example shown in FIG. 3, a conductive film 14, a first insulating film 15, a second insulating film 16, a wiring layer 17, a third insulating film 18, and a bonding electrode 19 are arranged on the surface of the semiconductor structure 10 opposite to the light emitting surface 20A.

[0035] The conductive film 14 is disposed on the surface of the p-side semiconductor layer 13 opposite to the surface on which the active layer 12 is disposed, and is electrically connected to the p-side semiconductor layer 13. The conductive film 14 may be reflective to the light emitted by the active layer 12. When the conductive film 14 is reflective to the light emitted by the active layer 12, it has a reflectivity of 60% or more, preferably 70% or more, for the peak wavelength of the light emitted by the active layer 12.

[0036] The first insulating film 15 is disposed on the p-side semiconductor layer 13 and covers the conductive film 14. The second insulating film 16 covers the first insulating film 15. The second insulating film 16 also covers the side surface of the mesa portion where part of the n-side semiconductor layer 11, the active layer 12, and the p-side semiconductor layer 13 are stacked.

[0037] The wiring layer 17 is disposed on the second insulating film 16. The wiring layer 17 has an n-side wiring layer 17n and a p-side wiring layer 17p. The n-side wiring layer 17n and the p-side wiring layer 17p are separated from each other on the second insulating film 16. The n-side wiring layer 17n contacts an n-side connecting portion 11A exposed from the active layer 12 and the p-side semiconductor layer 13 in the n-side semiconductor layer 11, and is electrically connected to the n-side semiconductor layer 11. In the example shown in FIG. 3, the n-side wiring layer 17n also contacts an outer peripheral surface 11B exposed from the active layer 12 and the p-side semiconductor layer 13 in the n-side semiconductor layer 11.

[0038] The third insulating film 18 covers the wiring layer 17. The third insulating film 18 also covers the outer peripheral surface 11B of the n-side semiconductor layer 11 and a side surface 11C of the n-side semiconductor layer 11 connected to the outer peripheral surface 11B.

[0039] The bonding electrode 19 is disposed in an opening formed in the third insulating film 18 and is connected to the wiring layer 17 through the opening. An electrode 21 having, for example, a bump shape is disposed on the bonding electrode 19. The bonding electrode 19 has an n-side bonding electrode 19n connected to the n-side wiring layer 17n and a p-side bonding electrode 19p connected to the p-side wiring layer 17p. The electrode 21 has an n-side electrode 21n connected to the n-side bonding electrode 19n and a p-side electrode 21p connected to the p-side bonding electrode 19p. The n-side electrode 21n is electrically connected to the n-side semiconductor layer 11 via the n-side bonding electrode 19n and the n-side wiring layer 17n.

[0040] The p-side interconnect layer 17p is in contact with the conductive film 14. The p-side semiconductor layer 13 is electrically connected to the p-side electrode 21p via the conductive film 14, the p-side interconnect layer 17p, and the p-side junction electrode 19p.

[0041] As shown in Fig. 4, the semiconductor section 30 may have a metal layer 17A on the lower surface 32 side. The metal layer 17A is located between the semiconductor section 30 and the first resin member 40 in the third direction Z. Returned light from above or light whose wavelength has been converted by a translucent member (described later) can be reflected by the metal layer 17A and directed upward, as indicated by arrow A in Fig. 4. This can improve the light extraction efficiency of the light emitting device 1.

[0042] <Supporting member> 2, the light emitting device 1 may further include a support member 70 that supports the plurality of semiconductor light emitting units 20, the semiconductor unit 30, and the first resin member 40. A surface of the semiconductor light emitting unit 20 opposite the light emitting surface 20A and a lower surface 32 of the semiconductor unit 30 face the support member 70 in the third direction Z.

[0043] The support member 70 also functions as a wiring member that electrically connects the semiconductor light emitting units 20 to an external circuit. The support member 70 has an insulating base material 71, a first wiring portion 72, and a second wiring portion 73. The insulating base material 71 has a third surface 71A and a fourth surface 71B. The third surface 71A faces the semiconductor light emitting units 20, the semiconductor portion 30, and the first resin member 40 in the third direction Z. The fourth surface 71B is located on the opposite side of the third surface 71A in the third direction Z.

[0044] The first wiring portion 72 is disposed on the third surface 71A. The electrode 21 of the semiconductor light emitting portion 20 is joined to the first wiring portion 72 via a conductive joining member 80. The second wiring portion 73 is disposed on the fourth surface 71B. The second wiring portion 73 can be electrically connected to the first wiring portion 72, for example, via a conductive member that penetrates the insulating base material 71. The second wiring portion 73 functions as an external connection terminal that is electrically connected to a mounting board on which the light emitting device 1 is mounted.

[0045] The insulating base material 71 can be made of, for example, aluminum nitride, aluminum oxide, or silicon nitride. When aluminum nitride is used as the material for the insulating base material 71, the heat dissipation properties of the support member 70 can be improved, and the heat generated by the light emission of the semiconductor light emitting unit 20 can be efficiently dissipated. The joining member 80 can be made of, for example, solder.

[0046] <Second structure> The light emitting device 1 may further include a second structure 120 disposed on the plurality of semiconductor light emitting units 20. The second structure 120 has a plurality of light-transmitting members 50 and a second resin member 62 disposed between the plurality of light-transmitting members 50. The plurality of light-transmitting members 50 are integrally held by the second resin member 62.

[0047] (Translucent material) Each of the plurality of light-transmitting members 50 is disposed on each of the plurality of semiconductor light-emitting sections 20. The light-transmitting members 50 convert the wavelength of at least a portion of the light emitted by the active layer of the semiconductor light-emitting section 20. The light-emitting device 1 emits light that is a mixture of the light emitted by the semiconductor light-emitting section 20 and the light whose wavelength has been converted by the light-transmitting members 50.

[0048] 1, the shape of the semiconductor light emitting unit 20 and the shape of the light-transmitting member 50 can be a square or a rectangle in a plan view. For example, in a plan view, the outer edge (shown by a solid line) of the light-transmitting member 50 is located inside the outer edge (shown by a dashed line) of the semiconductor light emitting unit 20. In this case, the semiconductor light emitting unit 20 can emit light with a narrower angle that spreads less than when the outer edge of the light-transmitting member 50 is aligned with the outer edge of the semiconductor light emitting unit 20 or is located outside the outer edge of the semiconductor light emitting unit 20 in a plan view.

[0049] The outer edge of the light-transmitting member 50 may coincide with the outer edge of the semiconductor light emitting unit 20 in a plan view, or may be located outside the outer edge of the semiconductor light emitting unit 20.

[0050] As shown in FIG. 2, the light-transmitting member 50 may have a wavelength conversion layer 51 arranged on the light-emitting surface 20A of the semiconductor light-emitting unit 20, a light-diffusing layer 52 arranged on the wavelength conversion layer 51, and a light-transmitting layer 53 arranged on the light-diffusing layer 52.

[0051] The wavelength conversion layer 51 has a wavelength conversion function. The wavelength conversion layer 51 includes, for example, a resin similar to that of the first resin member 40 and a wavelength conversion material. The wavelength conversion material may be, for example, an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al14 O 25 :(Eu), chlorosilicate-based phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride-based phosphors, LSN-based phosphors (e.g., (La,Y)3Si6N 11 :Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu) and other nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1.) or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively.), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used.

[0052] The wavelength conversion layer 51 may contain one type of wavelength conversion substance or may contain a plurality of types of wavelength conversion substances.

[0053] The light diffusion layer 52 diffuses the light emitted by the semiconductor light emitting unit 20 and the light whose wavelength has been converted by the wavelength conversion layer 51. The light diffusion layer 52 may contain, for example, a base resin similar to that of the first resin member 40 and a light diffusion material. Examples of the light diffusion material that can be used include titanium oxide and silicon oxide. The light diffusion layer 52 allows the body color of the translucent member 50 and the body color of the second resin member 62 to be closer to each other when the light emitting device 1 is viewed from the light-emitting surface side during non-light emission, resulting in a light emitting device with an excellent appearance during non-light emission. The concentration of the light diffusion material in the light diffusion layer 52 is preferably lower than the concentration of the light-reflecting material in the second resin member 62. This facilitates light extraction from the translucent member 50.

[0054] The light-transmitting layer 53 may contain, for example, the same resin as the first resin member 40. The light-transmitting layer 53 has a higher transmittance than the light-diffusing layer 52 for the light emitted by the semiconductor light-emitting unit 20 and the light whose wavelength has been converted by the wavelength conversion layer 51. The light-transmitting layer 53 does not contain, for example, a light-diffusing material.

[0055] (Second resin member) The second resin member 62 is disposed between adjacent light-transmitting members 50 in the first direction X and between adjacent light-transmitting members 50 in the second direction Y. The second resin member 62 is reflective to light emitted by the semiconductor light emitting unit 20 and light whose wavelength has been converted by the light-transmitting member 50. The second resin member 62 can have a configuration similar to that of the first resin member 40, for example.

[0056] By disposing the second resin member 62 between adjacent light-transmitting members 50, when one semiconductor light emitting unit 20 emits light and the semiconductor light emitting unit 20 adjacent to that one semiconductor light emitting unit 20 does not emit light, it is possible to reduce the incidence of light emitted from the one semiconductor light emitting unit 20 on the light-transmitting member 50 above the non-light emitting semiconductor light emitting unit 20, causing the wavelength conversion material included in the light-transmitting member 50 above the non-light emitting semiconductor light emitting unit 20 to emit light. This makes it possible to provide a light emitting device 1 with high contrast.

[0057] 2, the second resin member 62 does not cover the outer surface of the light-transmitting member 50 located outermost in the first direction X. Moreover, the second resin member 62 does not cover the outer surface of the light-transmitting member 50 located outermost in the second direction Y. The light emitting device of the present disclosure is not limited to this, and the second resin member 62 may cover the outer surface of the light-transmitting member 50 located outermost in a plan view.

[0058] <Third resin member> The light emitting device 1 may further include a third resin member 63. The third resin member 63 is disposed on the outer periphery of the third surface 71A of the insulating base material 71 where the light source section 100 is not disposed, and covers the side surface 43 of the first resin member 40. The third resin member 63 is also disposed on the upper surface 31 of the semiconductor section 30, and covers the upper surface 31 of the semiconductor section 30.

[0059] The third resin member 63 is reflective to the light emitted by the semiconductor light emitting units 20 and the light whose wavelength has been converted by the light-transmitting member 50. The third resin member 63 can reduce the emission of light to areas outside the area where the plurality of semiconductor light emitting units 20 are arranged, thereby making it possible to provide a light emitting device 1 with high contrast.

[0060] The third resin member 63 is further located outside the plurality of light-transmitting members 50 in a plan view, and covers the outermost side surfaces of the light-transmitting members 50. This makes it possible to reduce light emission to areas outside the area where the plurality of light-transmitting members 50 are arranged, and to provide a light-emitting device 1 with high contrast.

[0061] The third resin member 63 can have, for example, the same configuration as the second resin member 62. This allows the body color of the second resin member 62 and the body color of the third resin member 63 to be close to each other in a plan view, resulting in a light emitting device with an excellent appearance when not emitting light.

[0062] [Method of manufacturing a light-emitting device] A method for manufacturing a light emitting device according to this embodiment will be described with reference to FIGS. A manufacturing method for a light emitting device according to an embodiment includes the steps of preparing a first structure, placing the first structure on a support member, placing a first resin member between the first structure and the support member, and separating the substrate from the plurality of semiconductor light emitting units and the semiconductor unit.

[0063] <Step of preparing the first structure> As shown in FIGS. 6 and 7, the first structure 110 has a substrate 101, a plurality of semiconductor light emitting sections 20, and a non-light emitting semiconductor section 30.

[0064] The substrate 101 has a first surface 101A and a second surface 101B located on the opposite side of the first surface 101A in the third direction Z. The substrate 101 is, for example, a sapphire substrate.

[0065] The plurality of semiconductor light emitting units 20 are arranged on the second surface 101B of the substrate 101. The light emitting surface 20A faces the second surface 101B in the third direction Z. The plurality of semiconductor light emitting units 20 are arranged spaced apart from one another on the second surface 101B in the first direction X and the second direction Y.

[0066] The semiconductor section 30 is disposed in a region of the second surface 101B where the semiconductor light emitting sections 20 are not disposed. As shown in FIG. 6 , the region of the second surface 101B where the semiconductor light emitting sections 20 are not disposed has, in plan view, a peripheral region 101R1 surrounding the semiconductor light emitting sections 20 and inter-semiconductor light emitting section regions 101R2 between the semiconductor light emitting sections 20. The inter-semiconductor light emitting section regions 101R2 include regions between adjacent semiconductor light emitting sections 20 in the first direction X, regions between adjacent semiconductor light emitting sections 20 in the second direction Y, and regions between adjacent semiconductor light emitting sections 20 in a direction inclined with respect to the first direction X and the second direction Y (diagonal direction of the semiconductor light emitting sections 20). In the example shown in FIG. 6 , the inter-semiconductor light emitting section regions 101R2 have a lattice pattern in plan view. The inner side surfaces of the semiconductor section 30 are spaced apart from and face the semiconductor light emitting sections 20 in the first direction X and the second direction Y.

[0067] 5. The wafer W has a substrate 101, a plurality of semiconductor light emitting units 20, and a semiconductor unit 30. The wafer W can be prepared by, for example, forming a semiconductor layer on the second surface 101B of the substrate 101 by MOCVD (metal organic chemical vapor deposition), and then separating the semiconductor layer formed on the second surface 101B by etching, for example, RIE (reactive ion etching), into a plurality of semiconductor layers that will become the plurality of semiconductor structures 10 and a semiconductor layer that will become the semiconductor units 30.

[0068] In the wafer W, the semiconductor portion 30 extends in the first direction X and the second direction Y while defining a plurality of light emitting regions 150. In each light emitting region 150, a plurality of semiconductor light emitting units 20 (nine semiconductor light emitting units 20 in the example of FIG. 5) are arranged spaced apart from one another.

[0069] The wafer W is cleaved along the first direction X and the second direction Y at the positions of the semiconductor portions 30, thereby dividing the wafer W into individual first structures 110 as shown in FIG. 6. For example, a laser beam is irradiated onto the inside of the substrate 101 in a region that overlaps in plan view with the positions of the semiconductor portions 30 on the wafer W, to form modified portions inside the substrate 101 along the first direction X and the second direction Y. For example, the modified portions are formed in a lattice pattern in plan view. The wafer W can be cleaved by applying a pressure to the wafer W on which the modified portions have been formed.

[0070] In the wafer W shown in FIG. 5, the spacing between adjacent light-emitting regions 150 is sufficient to cleave the wafer W. For example, the spacing between adjacent light-emitting regions 150 is greater than the spacing between adjacent semiconductor light-emitting units 20 within the light-emitting region 150 (the width of the inter-semiconductor light-emitting unit region 101R2). Therefore, the width of the semiconductor unit 30 that partitions the multiple light-emitting regions 150 is greater than the spacing between adjacent semiconductor light-emitting units 20 within the light-emitting region 150 (the width of the inter-semiconductor light-emitting unit region 101R2). Furthermore, in the first structure 110 shown in FIG. 6 after singulation, the width of the outer periphery region 101R1 is greater than the width of the inter-semiconductor light-emitting unit region 101R2. The semiconductor unit 30 is disposed in the outer periphery region 101R1.

[0071] In the wafer W, the semiconductor layer formed on the second surface 101B includes an n-side semiconductor layer 11 located on the second surface 101B, an active layer 12 located on the n-side semiconductor layer 11, and a p-side semiconductor layer 13 located on the active layer 12. Thereafter, in the semiconductor light emitting section 20, a portion of the p-side semiconductor layer 13 and a portion of the active layer 12 are removed to expose a portion of the n-side semiconductor layer 11 (such as the n-side connecting portion 11A and the outer peripheral surface 11B) with which the wiring layer 17 is in contact. At this time, the p-side semiconductor layer 13 and the active layer 12 are also removed from the semiconductor layer that will become the semiconductor section 30. As a result, as described above with reference to FIG. 3 , the semiconductor section 30 is formed, which is made of the n-side semiconductor layer 11 and does not include the p-side semiconductor layer 13 and the active layer 12. Thereafter, the semiconductor layer in the portions other than the portions that will become the plurality of semiconductor light emitting sections 20 and the semiconductor layer in the portions other than the portions that will become the semiconductor section 30 is removed to form inter-semiconductor light emitting section regions 101R2, thereby separating the semiconductor light emitting sections 20 and the semiconductor section 30. Therefore, the thickness of the semiconductor portion 30 is thinner than the thickness of the semiconductor light emitting portion 20 including the p-side semiconductor layer 13 and the active layer 12. This makes it easier to cleave the wafer W at the position of the semiconductor portion 30.

[0072] 3, the aforementioned conductive film 14, first insulating film 15, second insulating film 16, wiring layer 17, third insulating film 18, and bonding electrode 19 are formed on semiconductor light emitting section 20. In the step of forming wiring layer 17, a metal layer 17A can be formed on lower surface 32 of semiconductor section 30, as shown in FIG. 4. Metal layer 17A can be formed simultaneously with wiring layer 17 disposed on semiconductor light emitting section 20 using the same material, for example. This can improve the efficiency of the process.

[0073] Furthermore, an electrode 21 can be formed on the surface of the wafer W that is located opposite to the light emitting surface 20A of the semiconductor light emitting section 20.

[0074] <Step of placing the first structure on the support member> 8, the second surface 101B of the substrate 101 is placed opposite the support member 70, and the first structure 110 is placed on the support member 70. The electrode 21 is joined to the first wiring portion 72 arranged on the third surface 71A of the support member 70 via the joining member 80.

[0075] <Step of arranging first resin member between first structure and support member> For example, the first resin member 40 can be disposed between the first structure 110 and the support member 70 using a mold 300 shown in FIGS.

[0076] 9, the mold 300 has an upper mold 301 and a lower mold 302. The upper mold 301 has a recess 301A. The first structure 110 is placed between the upper mold 301 and the lower mold 302. The support member 70 is placed on the lower mold 302. The first surface 101A of the substrate 101 faces an upper inner wall surface 301B that defines the recess 301A in the upper mold 301.

[0077] Within the recess 301A, at least the first surface 101A of the substrate 101 is covered with a covering member 303. A portion of the covering member 303 extends outside the recess 301A and is sandwiched between the lower end of the upper mold 301 and the upper surface of the lower mold 302. The covering member 303 may cover the side surface 101C of the substrate 101 in addition to the first surface 101A of the substrate 101. The covering member 303 is not disposed between the second surface 101B of the substrate 101 and the support member 70. The covering member 303 is, for example, a resin film made of a fluorine-based material. The thickness of the covering member 303 is, for example, 100 μm or more and 300 μm or less. Using a resin film as the covering member 303 that is thicker than the release resin films commonly used in mold molding improves the ability of the covering member 303 to conform to irregularities. This can reduce the flow and infiltration of resin material 140 (described later) between first surface 101A of substrate 101 and covering member 303.

[0078] With the first surface 101A of the substrate 101 covered with the covering member 303, a resin material 140 having fluidity is supplied into the mold 300 as shown in FIG. 10. For example, liquid resin material 140 is supplied into the mold 300. Thereafter, the resin material 140 is cured by, for example, heating. After the resin material 140 is cured, the upper mold 301 is moved upward and the covering member 303 is removed. As a result, a first resin member 40 made of the cured resin material 140 is disposed between the first structure 110 and the support member 70 as shown in FIG. 11.

[0079] The first resin member 40 is disposed in the inter-semiconductor light-emitting unit region 101R2, and covers the second surface 101B of the substrate 101 and the side surface of the semiconductor light-emitting unit 20 in the inter-semiconductor light-emitting unit region 101R2. The first resin member 40 is disposed between the lower surface 32 of the semiconductor unit 30 and the support member 70, and covers the lower surface 32 of the semiconductor unit 30. The first resin member 40 is disposed between the semiconductor unit 30 and the semiconductor light-emitting unit 20, and covers the second surface 101B of the substrate 101, the side surface of the semiconductor light-emitting unit 20, and the side surface of the semiconductor unit 30 between the semiconductor unit 30 and the semiconductor light-emitting unit 20. The first resin member 40 covers the outermost side surface of the semiconductor unit 30. The first resin member 40 covers the side surface of the electrode 21, the side surface of the bonding member 80, and the side surface of the first wiring unit 72.

[0080] <Step of Separating the Substrate from the Multiple Semiconductor Light Emitting Units and the Semiconductor Unit> For example, the substrate 101 is a sapphire substrate, and the semiconductor light emitting units 20 and the semiconductor unit 30 contain gallium nitride (GaN). In this case, a laser lift-off method can be applied to the step of separating the substrate 101 from the plurality of semiconductor light emitting units 20 and the semiconductor unit 30.

[0081] In the laser lift-off method, laser light is irradiated from the first surface 101A side of the substrate 101 toward the light-emitting surface 20A of the semiconductor light-emitting unit 20 and the upper surface 31 of the semiconductor unit 30. The laser light has a wavelength that is transmitted through the substrate 101 but is absorbed by the semiconductor light-emitting unit 20 and the semiconductor unit 30. The laser light has, for example, a peak emission wavelength of 190 nm or more and 380 nm or less. Gallium nitride absorbs the energy of the laser light and thermally decomposes. The laser light irradiation decomposes gallium nitride into nitrogen and gallium on the light-emitting surface 20A of the semiconductor light-emitting unit 20 and the upper surface 31 of the semiconductor unit 30, and the substrate 101 is separated from the semiconductor light-emitting units 20 and the semiconductor unit 30. The gas (nitrogen gas) generated during this decomposition also allows the substrate 101 to be peeled off from the first resin member 40.

[0082] In the step of disposing the first resin member 40 described above, because the first surface 101A of the substrate 101 is covered with the covering member 303, the first resin member 40 is not disposed on the first surface 101A of the substrate 101. Even if the resin material 140 flows and infiltrates between the first surface 101A of the substrate 101 and the covering member 303, the amount of the first resin member 40 disposed on the first surface 101A of the substrate 101 can be reduced compared to when the covering member 303 is not used. Reducing the amount of the first resin member 40 on the first surface 101A reduces absorption or scattering of the laser light by the first resin member 40 on the first surface 101A of the substrate 101 during the laser lift-off method. This reduces unevenness in the irradiation of the laser light, making it easier to separate the substrate 101.

[0083] If the resin material 140 flows and penetrates between the first surface 101A of the substrate 101 and the covering member 303, it is preferable to include a step of removing the first resin member 40 disposed on the first surface 101A. For example, the first resin member 40 disposed on the first surface 101A can be removed by wet blasting. In the wet blasting, a solution containing an abrasive is sprayed toward the first surface 101A, and the resulting impact force removes the first resin member 40 disposed on the first surface 101A. When a large amount of the first resin member 40 is disposed on the first surface 101A, the removal efficiency of the first resin member 40 can be improved by increasing the spray force of the abrasive solution. However, increasing the spray force of the abrasive solution makes the first surface 101A of the substrate 101 more susceptible to scratches, and laser light during the laser lift-off method is more likely to be scattered or reflected by the first surface 101A. As a result, a portion of the gallium nitride layer may remain undecomposed at the interface between second surface 101B and light emitting surface 20A of semiconductor light emitting unit 20, and at the interface between second surface 101B and upper surface 31 of semiconductor unit 30. If substrate 101 is separated in this state, stress may be applied to the portion of the gallium nitride layer that remains undecomposed, which may cause chipping or the like in semiconductor light emitting unit 20 and semiconductor unit 30.

[0084] According to this embodiment, as described above, first surface 101A is covered with covering member 303 in the step of disposing first resin member 40. Therefore, even if first resin member 40 is disposed on first surface 101A, the spray force of the abrasive-containing solution can be weakened, first surface 101A is less likely to be scratched, and scattering or reflection of laser light on first surface 101A during laser lift-off can be reduced. This reduces uneven irradiation of laser light, and substrate 101 can be easily separated.

[0085] Silicone resin or epoxy resin can be used as a material for the first resin member 40 suitable for peeling off the substrate 101 using the laser lift-off method. After irradiation with laser light, the substrate 101 can be lifted upward, for example, by suction using a nozzle, to separate it from the multiple semiconductor light emitting units 20, the semiconductor unit 30, and the first resin member 40. At this time, the first resin member 40 may also be lifted upward due to being pulled by the substrate 101. If the force exerted when the first resin member 40 is lifted is applied to the outer periphery of the semiconductor light emitting unit 20, chipping may occur in the outer periphery of the semiconductor light emitting unit 20. Because silicone resin has weaker adhesive strength with the substrate 101 than epoxy resin, using silicone resin as the material for the first resin member 40 makes it less likely for the first resin member 40 to be pulled by the substrate 101 than when epoxy resin is used, and therefore chipping in the outer periphery of the semiconductor light emitting unit 20 is less likely to occur. Preferably, a silicone-modified resin such as SMC resin can be used as the silicone resin. Silicone-modified resins such as SMC resin have a higher hardness than epoxy resin. Therefore, when a silicone-modified resin such as SMC resin is used as the material for the first resin member 40, the first resin member 40 is more resistant to the impact when separating the substrate 101 than when an epoxy resin is used, and cracks and the like are less likely to occur in the first resin member 40.

[0086] In the laser lift-off method, the laser light is also irradiated onto the interface between the second surface 101B of the substrate 101 and the first resin member 40. As a result, the first resin surface 41 side of the first resin member 40 that contacts the substrate 101 absorbs the energy of the laser light and is altered, forming a light-absorbing portion with high light absorption properties.

[0087] According to this embodiment, by arranging the semiconductor section 30 in an area on the second surface 101B of the substrate 101 where the plurality of semiconductor light emitting sections 20 are not arranged, it is possible to reduce the area of ​​the first resin member 40 that is irradiated with laser light in the laser lift-off method. This reduces the area of ​​the light absorbing section in a plan view, making it possible to manufacture a light emitting device with reduced light absorption.

[0088] As described above, among the regions on the second surface 101B of the substrate 101 where the semiconductor light emitting units 20 are not arranged, the semiconductor unit 30 is arranged in the outer peripheral region 101R1 which is wider than the region 101R2 between the semiconductor light emitting units. This significantly reduces the area of ​​the first resin member 40 that is irradiated with laser light.

[0089] 12 , by separating the substrate 101 from the semiconductor light emitting units 20, the semiconductor unit 30, and the first resin member 40, the light source unit 100 is obtained in which the substrate 101 has been removed from the first structure 110. In the light source unit 100, the light emitting surface 20A of the semiconductor light emitting unit 20 and the upper surface 31 of the semiconductor unit 30 are exposed from the first resin member 40.

[0090] A roughening treatment can be performed on the exposed light-emitting surface 20A of the semiconductor light-emitting unit 20. This can improve the light extraction efficiency from the light-emitting surface 20A. The roughening treatment can be performed by, for example, RIE (Reactive Ion Etching) using a chlorine-containing gas or wet etching using an alkaline solution such as TMAH (Tetramethylammonium hydroxide).

[0091] <Step of placing the second structure> The method for manufacturing a light emitting device according to the embodiment may further include, after separating the substrate 101, a step of arranging a second structure 120 on the plurality of semiconductor light emitting units 20, as shown in FIG.

[0092] As described above, the second structure 120 has a plurality of light-transmitting members 50 and a second resin member 62 disposed between the plurality of light-transmitting members 50. As described above, the light-transmitting member 50 has a wavelength conversion layer 51 disposed on the light-emitting surface 20A of the semiconductor light-emitting unit 20, a light diffusion layer 52 disposed on the wavelength conversion layer 51, and a light-transmitting layer 53 disposed on the light diffusion layer 52. The second resin member 62 covers the upper surface of the light-transmitting layer 53.

[0093] In the step of arranging second structure 120, second structure 120 can be arranged on light emitting surface 20A of semiconductor light emitting unit 20 via an adhesive layer, for example. Alternatively, second structure 120 may be directly bonded to light emitting surface 20A of semiconductor light emitting unit 20.

[0094] <Step of placing third resin member> The method for manufacturing the light emitting device according to the embodiment may include a step of arranging the third resin member 63 after the step of arranging the second structure 120.

[0095] In the step of arranging the third resin member 63, as shown in FIG. 14, the third resin member 63 is arranged on the support member 70 so as to cover the second structure 120 and the light source section 100.

[0096] The method may further include a step of simultaneously removing the third resin member 63 and the second resin member 62 covering the upper surface of the light-transmitting layer 53 after the third resin member 63 is disposed. At this time, a portion of the upper surface of the light-transmitting layer 53 may also be removed at the same time. For example, the third resin member 63 and the second resin member 62 are removed using a grinding device or the like. As a result, the upper surface of the light-transmitting layer 53 is exposed from the second resin member 62 and the third resin member 63, as shown in FIG. 15 . The upper surfaces of the light-transmitting layer 53, the second resin member 62, and the third resin member 63 are on the same XY plane.

[0097] By simultaneously removing the second resin member 62 and the third resin member 63, the number of steps can be reduced compared to removing each resin member in separate steps. Furthermore, in the step of removing the second resin member 62 and the third resin member 63, the light-transmitting layer 53 functions as a layer that prevents the light-diffusing layer 52 from being removed. By not removing the light-diffusing layer 52, the variation in thickness of the light-diffusing layer 52 can be reduced. This reduces the variation in light-diffusing function among multiple light-emitting units, each of which includes a semiconductor light-emitting unit 20 and a light-transmitting member 50. Furthermore, in a plan view, the variation in color among the multiple light-emitting units when not emitting light can be reduced, resulting in a light-emitting device that has an excellent appearance when not emitting light.

[0098] After the process of Figure 15, for example, using a blade, the third resin member 63 and the insulating base material 71 of the support member 70 are cut in the area where the first resin member 40 is not arranged, thereby separating the light emitting device 1 shown in Figure 2.

[0099] The second structure 120 can be prepared by the steps described below with reference to FIGS.

[0100] 16 , a wavelength conversion sheet 250 is placed on a sheet- or plate-shaped support 200. The wavelength conversion sheet 250 has a wavelength conversion layer 51 placed on the support 200, a light diffusion layer 52 placed on the wavelength conversion layer 51, and a light-transmitting layer 53 placed on the light diffusion layer 52.

[0101] 17, the wavelength conversion sheet 250 is separated into a plurality of light-transmitting members 50. For example, grooves 201 are formed in the wavelength conversion sheet 250 by blade processing or laser processing, and the wavelength conversion sheet 250 is separated into a plurality of light-transmitting members 50.

[0102] 18, a second resin member 62 is placed on the support body 200 so as to cover the plurality of light-transmitting members 50. The second resin member 62 is placed by, for example, compression molding using a mold. The second resin member 62 is also placed in the grooves 201 between adjacent light-transmitting members 50.

[0103] In the step shown in FIG. 19, the second resin member 62 is cut and separated into a plurality of second structures 120 by, for example, blade processing or laser processing.

[0104] The step of arranging the second structure 120 may include a step of arranging a plurality of light-transmitting members 50 so that one light-transmitting member 50 overlaps one semiconductor light-emitting unit 20 in a planar view, and then a step of arranging a second resin member 62 between the plurality of light-transmitting members 50.

[0105] [Modification of the manufacturing method of the light emitting device] A modified example of the method for manufacturing a light emitting device will be described with reference to FIGS.

[0106] 20, the wafer W described above with reference to Fig. 5 is placed on a support member 70. In this example, the support member 70 is a wiring member included as part of the light emitting device, but the support member may also be a member used temporarily in the manufacturing process.

[0107] After the wafer W is placed on the support member 70, the first resin member 40 is placed between the wafer W and the support member 70, as shown in Fig. 21. As described above, the first resin member 40 can be placed using a mold.

[0108] After the first resin member 40 is placed, the substrate 101 is separated from the plurality of semiconductor light emitting units 20, the semiconductor unit 30, and the first resin member 40. As described above, the substrate 101 can be separated by laser lift-off. By separating the substrate 101, a wafer-shaped light source unit 100 is obtained, as shown in FIG. 22. In the wafer-shaped light source unit 100, the light emitting surfaces 20A of the plurality of semiconductor light emitting units 20, the upper surfaces 31 of the semiconductor units 30, and the first resin surface 41 of the first resin member 40 are exposed.

[0109] After separating the substrate 101, the semiconductor portion 30 and the first resin member 40 covering the lower surface 32 of the semiconductor portion 30 are cut at the position of the semiconductor portion 30 using, for example, a blade or a laser. As a result, the semiconductor portion 30 is separated into a plurality of light source portions 100 on the support member 70. After this, the same processes as those shown in FIGS. 13 to 15 can be continued.

[0110] [Modification of the Light-Emitting Device] 23, in plan view, the semiconductor section 30 may be further located between the plurality of semiconductor light emitting sections 20. Fig. 24 is a schematic cross-sectional view taken along line XXIV-XXIV in Fig. 23. The semiconductor section 30 between the plurality of semiconductor light emitting sections 20 is located below the second resin member 62. The upper surface of the semiconductor section 30 between the plurality of semiconductor light emitting sections 20 is covered with the second resin member 62.

[0111] By further positioning the semiconductor section 30 between multiple semiconductor light emitting sections 20, the area of ​​the first resin surface 41 of the first resin member 40 can be further reduced, and light absorption in the light emitting device can be further reduced.

[0112] 23 and 24 includes a step of preparing a first structure 110 shown in Fig. 25. In the step of preparing the first structure 110 shown in Fig. 25, the semiconductor portion 30 is arranged in a peripheral region 101R1 and an inter-semiconductor light emitting portion region 101R2 on the second surface 101B of the substrate 101. For example, when the semiconductor layer formed on the second surface 101B of the substrate 101 is separated by etching into a plurality of semiconductor layers that will become the plurality of semiconductor structures 10 and a semiconductor layer that will become the semiconductor portion 30, the semiconductor layer that will become the semiconductor portion 30 is left in the inter-semiconductor light emitting portion region 101R2.

[0113] Embodiments of the present disclosure may include the following light emitting device manufacturing method and light emitting device.

[0114] [Section 1] a substrate having a first surface and a second surface opposite the first surface; a plurality of semiconductor light emitting units disposed on the second surface of the substrate; a non-light-emitting semiconductor portion disposed in an area of ​​the second surface where the plurality of semiconductor light-emitting portions are not disposed; providing a first structure having: placing the first structure on a support member with the second surface facing the support member; disposing a first resin member between the first structure and the support member; a step of irradiating a laser beam from the first surface side of the substrate toward the semiconductor light emitting units and the semiconductor unit after disposing the first resin member, thereby separating the substrate from the semiconductor light emitting units and the semiconductor unit; A method for manufacturing a light emitting device comprising: [Section 2] In the step of preparing the first structure, a region on the second surface of the substrate where the plurality of semiconductor light emitting units are not arranged includes a peripheral region surrounding the plurality of semiconductor light emitting units in a plan view and inter-semiconductor light emitting unit regions between the plurality of semiconductor light emitting units, the width of the outer peripheral region is greater than the width of the region between the semiconductor light emitting portions, Item 2. The method for manufacturing a light emitting device according to item 1, wherein the semiconductor part is disposed in the peripheral region. [Section 3] 3. The method for manufacturing a light emitting device according to item 2, wherein in the step of preparing the first structure, the semiconductor portion is further disposed in a region between the semiconductor light emitting portions. [Section 4] 3. The method for manufacturing a light emitting device according to item 2, further comprising the step of cutting the semiconductor portion and the first resin member at the position of the semiconductor portion after separating the substrate. [Section 5] 5. The method for manufacturing a light emitting device according to item 4, wherein in the step of preparing the first structure, the thickness of the semiconductor portion is thinner than the thickness of the semiconductor light emitting portion. [Section 6] In the step of preparing the first structure, the first structure has a metal layer disposed on the semiconductor portion, 6. The method for manufacturing a light emitting device according to any one of items 1 to 5, wherein the semiconductor portion is located between the metal layer and the second surface. [Section 7] The step of disposing the first resin member includes: placing the first structure and the support member in a mold; supplying a resin material into the mold in a state in which the first surface of the substrate is covered with a covering member; curing the resin material supplied into the mold; removing the covering member after curing the resin material; Item 7. A method for producing a light emitting device according to any one of Items 1 to 6, comprising: [Section 8] After separating the substrate, the method further includes a step of arranging a second structure on the plurality of semiconductor light emitting units; 8. The method for manufacturing a light emitting device according to any one of items 1 to 7, wherein the second structure has a plurality of light-transmitting members and a second resin member disposed between the plurality of light-transmitting members. [Section 9] the step of arranging the second structures includes a step of arranging the plurality of light-transmitting members so that one light-transmitting member overlaps one semiconductor light-emitting unit in a plan view; Item 9. The method for manufacturing a light emitting device according to item 8, further comprising: a step of arranging the second resin member between the plurality of light transmissive members. [Section 10] a plurality of semiconductor light emitting units each having a light emitting surface; a first resin member having a first resin surface and disposed between the plurality of semiconductor light emitting units so that the light emitting surface is exposed at the first resin surface; a non-light-emitting semiconductor portion having a lower surface and an upper surface, the lower surface being covered by the first resin member and the upper surface being exposed at the first resin surface; Equipped with a light emitting device, wherein the first resin member in contact with the lower surface of the semiconductor portion has a higher optical reflectance than the optical reflectance of the first resin surface; [Section 11] In a plan view, the semiconductor portion surrounds the plurality of semiconductor light emitting portions, Item 11. The light emitting device according to item 10, wherein the width of the semiconductor portion is larger than the distance between the plurality of semiconductor light emitting portions in a plan view. [Section 12] Item 12. The light emitting device according to item 10 or 11, wherein the semiconductor portion is further positioned between the plurality of semiconductor light emitting portions in plan view. [Section 13] 13. The light emitting device according to any one of items 10 to 12, wherein the thickness of the semiconductor section is thinner than the thickness of the plurality of semiconductor light emitting sections. [Section 14] 14. The light emitting device according to any one of items 10 to 13, wherein the semiconductor section has a metal layer on the lower surface side. [Section 15] a second structure disposed on the plurality of semiconductor light emitting units; 15. The light emitting device according to any one of items 10 to 14, wherein the second structure includes a plurality of light-transmitting members and a second resin member disposed between the plurality of light-transmitting members. [Section 16] a support member that supports the plurality of semiconductor light emitting units, the semiconductor unit, and the first resin member; 16. The light emitting device according to any one of items 10 to 15, wherein a surface of the semiconductor light emitting section opposite to the light emitting surface and the lower surface of the semiconductor section face the support member.

[0115] The embodiments of the present disclosure have been described above with reference to specific examples. However, the present disclosure is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present disclosure also fall within the scope of the present disclosure, as long as they include the gist of the present disclosure. In addition, within the scope of the concept of the present disclosure, a person skilled in the art may come up with various modifications and alterations, and these modifications and alterations also fall within the scope of the present disclosure. [Explanation of symbols]

[0116] 1...light emitting device, 10...semiconductor structure, 11...n-side semiconductor layer, 12...active layer, 13...p-side semiconductor layer, 17A...metal layer, 20...semiconductor light emitting portion, 20A...light emitting surface, 21...electrode, 30...semiconductor portion, 31...upper surface, 32...lower surface, 40...first resin member, 41...first resin surface, 42...second resin surface, 50...light-transmitting member, 51...wavelength conversion layer, 52...light diffusing layer, 53...light-transmitting layer, 62...second resin member, 63...third resin member, 70...support Support member, 71...insulating base material, 71A...third surface, 71B...fourth surface, 72...first wiring portion, 73...second wiring portion, 80...joining member, 100...light source portion, 101...substrate, 101A...first surface, 101B...second surface, 101R1...periphery region, 101R2...region between semiconductor light emitting portions, 110...first structure, 120...second structure, 150...light emitting region, 300...mold, 301...upper mold, 302...lower mold, 303...covering member, W...wafer

Claims

1. a substrate having a first surface and a second surface opposite the first surface; a plurality of semiconductor light emitting units disposed on the second surface of the substrate; a non-light-emitting semiconductor portion disposed in an area of ​​the second surface where the plurality of semiconductor light-emitting portions are not disposed; providing a first structure having: placing the first structure on a support member with the second surface facing the support member; disposing a first resin member between the first structure and the support member; a step of irradiating the plurality of semiconductor light emitting units and the semiconductor unit with laser light from the first surface side of the substrate after disposing the first resin member, thereby separating the substrate from the plurality of semiconductor light emitting units and the semiconductor unit; A method for manufacturing a light emitting device comprising:

2. In the step of preparing the first structure, a region on the second surface of the substrate where the plurality of semiconductor light emitting units are not arranged includes a peripheral region surrounding the plurality of semiconductor light emitting units in a plan view and inter-semiconductor light emitting unit regions between the plurality of semiconductor light emitting units, the width of the outer peripheral region is greater than the width of the region between the semiconductor light emitting portions, The method for manufacturing a light emitting device according to claim 1 , wherein the semiconductor portion is disposed in the peripheral region.

3. The method for manufacturing a light emitting device according to claim 2 , wherein in the step of preparing the first structure, the semiconductor portion is further disposed in a region between the semiconductor light emitting portions.

4. The method for manufacturing a light emitting device according to claim 2 , further comprising the step of cutting the semiconductor portion and the first resin member at the position of the semiconductor portion after separating the substrate.

5. The method for manufacturing a light emitting device according to claim 4 , wherein in the step of preparing the first structure, the thickness of the semiconductor portion is thinner than the thickness of the semiconductor light emitting portion.

6. In the step of preparing the first structure, the first structure has a metal layer disposed on the semiconductor portion, 6. The method for manufacturing a light emitting device according to claim 1, wherein the semiconductor portion is located between the metal layer and the second surface.

7. The step of disposing the first resin member includes: placing the first structure and the support member in a mold; supplying a resin material into the mold in a state in which the first surface of the substrate is covered with a covering member; curing the resin material supplied into the mold; removing the covering member after curing the resin material; 6. The method for manufacturing a light emitting device according to claim 1, comprising:

8. After separating the substrate, the method further includes a step of arranging a second structure on the plurality of semiconductor light emitting units; 6. The method for manufacturing a light emitting device according to claim 1, wherein the second structure includes a plurality of light-transmitting members and a second resin member disposed between the plurality of light-transmitting members.

9. the step of arranging the second structures includes a step of arranging the plurality of light-transmitting members so that one light-transmitting member overlaps one semiconductor light-emitting unit in a plan view; The method for manufacturing a light emitting device according to claim 8 , further comprising: disposing the second resin member between the plurality of light-transmitting members.

10. a plurality of semiconductor light emitting units each having a light emitting surface; a first resin member having a first resin surface and disposed between the plurality of semiconductor light emitting units such that the light emitting surface is exposed at the first resin surface; a non-light-emitting semiconductor portion having a lower surface and an upper surface, the lower surface being covered by the first resin member and the upper surface being exposed at the first resin surface; Equipped with a light emitting device, wherein the first resin member in contact with the lower surface of the semiconductor portion has a higher optical reflectance than the optical reflectance of the first resin surface;

11. In a plan view, the semiconductor portion surrounds the plurality of semiconductor light emitting portions, The light emitting device according to claim 10 , wherein the width of the semiconductor portion is greater than the distance between the plurality of semiconductor light emitting portions in a plan view.

12. The light emitting device according to claim 10 , wherein the semiconductor portion is further located between the plurality of semiconductor light emitting portions in a plan view.

13. The light emitting device according to claim 10 , wherein the thickness of the semiconductor portion is thinner than the thickness of the plurality of semiconductor light emitting portions.

14. 14. The light emitting device according to claim 10, wherein the semiconductor portion has a metal layer on the lower surface side.

15. a second structure disposed on the plurality of semiconductor light emitting units; 14. The light emitting device according to claim 10, wherein the second structure includes a plurality of light-transmitting members and a second resin member disposed between the plurality of light-transmitting members.

16. a support member that supports the plurality of semiconductor light emitting units, the semiconductor unit, and the first resin member; 14. The light emitting device according to claim 10, wherein a surface of the semiconductor light emitting portion opposite to the light emitting surface and the lower surface of the semiconductor portion face the support member.

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