Light emitting device

Abstract

To provide a light emitting device having high performance.SOLUTION: A light emitting device according to one aspect of the present invention includes: a light emitting part having a lower face, an upper face located on an opposite side of the lower face, and a side face connecting the lower face and the upper face; a first inorganic member including a first light reflection material 52, an alkali metal silicate and a first pore and covering at least a part of the lower face of the light emitting part; and a second inorganic member including a second light reflection material 62, the alkali metal silicate and a second pore and arranged on an outer periphery of the upper face of the light emitting part. An insulating member is arranged in the first pore, and gas is arranged in the second pore.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a light emitting device. [Background technology]

[0002] BACKGROUND ART A light emitting device is known that includes a light emitting element and an inorganic member disposed on the outer periphery of the light emitting element (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-58212 Summary of the Invention [Problem to be solved by the invention]

[0004] Such inorganic members still have room for improvement in order to improve the performance of light-emitting devices, which here refer to reliability, the steepness of the difference in luminance between the light-emitting region of the light-emitting device in an emitting state and the non-light-emitting region located around the light-emitting region, etc.

[0005] Therefore, an object of one embodiment of the present disclosure is to provide a high-performance light-emitting device. [Means for solving the problem]

[0006] A light emitting device according to one embodiment of the present disclosure comprises a light emitting section having a lower surface, an upper surface opposite the lower surface, and a side surface connecting the lower surface and the upper surface; a first inorganic member including a first light reflecting material, an alkali metal silicate, and first pores, and covering at least a portion of the lower surface of the light emitting section; and a second inorganic member including a second light reflecting material, an alkali metal silicate, and second pores, and arranged on the outer periphery of the upper surface of the light emitting section, wherein an insulating member is arranged in the first pores, and a gas is arranged in the second pores. [Effects of the Invention]

[0007] According to an embodiment of the present disclosure, a high-performance light-emitting device can be provided. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a plan view schematically illustrating a light emitting device according to an embodiment. [Figure 2] FIG. 2 is a cross-sectional view taken along line II-II of FIG. [Figure 3] 3 is a schematic enlarged view of a part of the first inorganic member taken along the line III-III in FIG. 2. FIG. [Figure 4] 3 is a schematic enlarged view of a part of the second inorganic member taken along the line III-III in FIG. 2. FIG. [Figure 5] 2 is a cross-sectional view taken along line II-II in FIG. 1, schematically illustrating the relationship between a light-emitting portion and first and second pores in the light-emitting device according to the embodiment. FIG. [Figure 6A] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to an embodiment. [Figure 6B] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to an embodiment. [Figure 6C] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to an embodiment. [Figure 6D] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to an embodiment. [Figure 6E] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to an embodiment. [Figure 7] FIG. 1 is a schematic cross-sectional view showing a first modified example of a light emitting device according to an embodiment. [Figure 8] 8 is a partial enlarged view of the portion of the second inorganic member enclosed by a dashed line in FIG. 7. [Figure 9] FIG. 10 is a schematic cross-sectional view showing a second modified example of the light emitting device according to the embodiment. [Figure 10] 10 is a partially enlarged view of the portion of the second inorganic member enclosed by a dashed line in FIG. 9. FIG. [Figure 11] FIG. 10 is a schematic cross-sectional view showing a third modified example of the light emitting device according to the embodiment. [Figure 12]FIG. 10 is a schematic cross-sectional view showing a fourth modified example of the light emitting device according to the embodiment. [Figure 13] FIG. 10 is a schematic cross-sectional view showing a fifth modified example of the light emitting device according to the embodiment. [Figure 14] 1 is a schematic cross-sectional view showing a light-emitting module according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, a description will be given of an embodiment of the invention with reference to the drawings. In the following description, terms indicating specific directions or positions (e.g., "upper," "lower," and other terms including these terms) will be used as necessary. However, the use of these terms is intended to facilitate understanding of the invention with reference to the drawings, and the meaning of these terms does not limit the technical scope of the present invention. Furthermore, parts that appear with the same reference numerals in multiple drawings indicate the same or equivalent parts or components.

[0010] Furthermore, the embodiments shown below are intended to exemplify light-emitting devices and the like embodying the technical concepts of the present invention, and are not intended to limit the present invention. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of the components described below are intended for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, the content described in one embodiment may also be applicable to other embodiments and modified examples. Furthermore, the size and positional relationships of components shown in the drawings may be exaggerated for clarity. Furthermore, to avoid overly complex drawings, schematic diagrams may be used in which some elements are omitted, or end views may be used as cross-sectional views showing only the cut surface.

[0011] Figure 1 is a plan view schematically showing a light-emitting device according to one embodiment, Figure 2 is a cross-sectional view taken along line II-II of Figure 1, Figure 3 is a schematic enlarged view of a portion of the first inorganic member taken along line III-III of Figure 2, and Figure 4 is a schematic enlarged view of a portion of the second inorganic member taken along line III-III of Figure 2.

[0012] As shown in FIGS. 1 and 2, the light emitting device 1 includes a light emitting section 4 having a lower surface 42, an upper surface 41 located opposite the lower surface 42, and a side surface 43 connecting the lower surface 42 and the upper surface. As shown in FIGS. 2 and 3, the light emitting device 1 also includes a first inorganic member 5 that includes a first light-reflecting material 52, an alkali metal silicate 51, and first pores 53 and covers at least a portion of the lower surface 42 of the light emitting section 4. As shown in FIGS. 2 and 4, the light emitting device 1 also includes a second inorganic member 6 that includes a second light-reflecting material 62, an alkali metal silicate 61, and second pores 63 and is disposed on the outer periphery of the upper surface 41 of the light emitting section 4. Furthermore, an insulating member 7 is disposed in the first pores 53, and a gas A is disposed in the second pores 63.

[0013] In the light emitting device 1, the first inorganic member 5 and the second inorganic member 6 can act as light reflective members that reflect light from the light emitting section 4. Furthermore, in the light emitting device 1, the insulating member 7 is disposed in the first pore 53, thereby improving the reliability (e.g., mechanical strength, gas barrier properties, and insulating properties) of the first inorganic member 5. The reason for improving the insulating properties is believed to be as follows. When the insulating member 7 is disposed in the first pore 53, the intrusion of moisture present in the atmosphere into the first pore 53 can be reduced, thereby reducing the reaction between the alkali metal silicate 51 contained in the first inorganic member 5 and moisture. This reduces the generation of metal ions derived from the alkali metal silicate 51 and the leakage current caused by the metal ions coming into contact with the electrode 22. As a result, a highly reliable light emitting device 1 can be provided.

[0014] Furthermore, in the light emitting device 1, the second inorganic member 6 having the gas A disposed in the second pores 63 is disposed on the outer periphery of the upper surface 41 of the light emitting section 4, so that light emitted from the light emitting section 4 and traveling to the second inorganic member 6 may be totally reflected at the interface between the alkali metal silicate 61 and the second pores 63. This makes it possible to provide a light emitting device 1 in which there is a steep difference in brightness between the light emitting section 4 (light emitting region) and the second inorganic member 6 (non-light emitting region) in the light emitting state.

[0015] 1 and 2, the light-emitting section 4 includes a light-emitting element 2 and a light-transmitting member 3 disposed on the light-emitting element 2. An upper surface 41 of the light-emitting section 4 is the light-emitting surface of the light-emitting device 1. When the light-emitting section 4 includes the light-transmitting member 3, an upper surface 31 of the light-transmitting member 3 becomes the light-emitting surface of the light-emitting device 1.

[0016] A semiconductor light-emitting element such as a light-emitting diode (LED) can be suitably used as the light-emitting element 2. As shown in FIG. 2 , the light-emitting element 2 has an upper surface 23, a lower surface 24 having an electrode 22, and a side surface 25. The light-emitting element 2 has a semiconductor structure 21 and an electrode 22. The lower surface of the semiconductor structure 21 corresponds to the lower surface 24 of the light-emitting element 2. A pair of positive and negative electrodes 22 are arranged on the lower surface of the semiconductor structure 21. The side surfaces of the semiconductor structure 21 correspond to the side surfaces 25 of the light-emitting element 2.

[0017] The semiconductor structure 21 includes an n-side semiconductor layer, a p-side semiconductor layer, and a light-emitting layer sandwiched between the n-side semiconductor layer and the p-side semiconductor layer. The light-emitting layer may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The semiconductor structure 21 includes multiple semiconductor layers made of nitride semiconductors. The nitride semiconductors are In x Al y Ga 1-x-y The term "light-emitting layer" includes semiconductors of all compositions in which the composition ratios x and y in the chemical formula N (0≦x, 0≦y, x+y≦1) are varied within the respective ranges. The emission peak wavelength of the light-emitting layer can be appropriately selected depending on the purpose. The light-emitting layer is configured to be able to emit, for example, visible light or ultraviolet light.

[0018] The light-emitting element 2 may have one semiconductor structure 21 or multiple semiconductor structures 21. Furthermore, one semiconductor structure 21 may have only one light-emitting layer or multiple light-emitting layers. The structure of the semiconductor structure 21 having multiple light-emitting layers may be a structure including multiple light-emitting layers between one n-side semiconductor layer and one p-side semiconductor layer, or may be a structure in which a structure including an n-side semiconductor layer, a light-emitting layer, and a p-side semiconductor layer in that order is repeated multiple times.

[0019] The light-emitting element 2 may or may not have a light-transmitting support substrate on the semiconductor structure 21. When the light-emitting element 2 has a support substrate, the upper surface of the support substrate becomes the upper surface 23 of the light-emitting element 2. When the light-emitting element 2 does not have a support substrate, the upper surface of the semiconductor structure 21 becomes the upper surface 23 of the light-emitting element 2.

[0020] Examples of materials for the support substrate include sapphire, spinel (MgAl2O4), and nitride semiconductors such as gallium nitride.

[0021] The light-emitting element 2 can have any shape in plan view. The shape of the light-emitting element 2 in plan view is, for example, a rectangle (square, rectangle, etc.), a triangle, or a hexagon. When the shape of the light-emitting element 2 in plan view is rectangular, the size of the light-emitting element 2 can be, for example, 1 mm x 1 mm. In this specification, plan view means a view from the top surface 23 of the light-emitting element 2.

[0022] For example, Cu, Au, Ag, Pt, Ni, Pd, Sn, Ti, or an alloy of any combination of these metals can be used as the material of electrode 22. Electrode 22 may be configured as a single layer or multiple layers.

[0023] The light-transmitting member 3 has a lower surface 32 facing the light-emitting element 2, an upper surface 31 located opposite the lower surface 32, and a side surface 33 connecting the lower surface 32 and the upper surface. The light-transmitting member 3 is disposed at a position overlapping the light-emitting element 2 in a planar view. In the example shown in FIG. 1, the area of ​​the lower surface 32 of the light-transmitting member 3 is larger than the area of ​​the upper surface 23 of the light-emitting element 2 in a planar view. However, this is not a limitation, and the area of ​​the lower surface 32 of the light-transmitting member 3 may be smaller than or the same as the area of ​​the upper surface 23 of the light-transmitting member 2. In the example shown in FIG. 2, the side surface 33 of the light-transmitting member 3 is a surface perpendicular to the lower surface 32. However, this is not a limitation, and the side surface 33 of the light-transmitting member 3 may be an inclined surface.

[0024] The light-transmitting member 3 may be disposed on the upper surface 23 of the light-emitting element 2 via an adhesive material, or may be disposed directly without an adhesive material.

[0025] The light-transmitting member 3 can contain a wavelength converting material that can convert the wavelength of at least a portion of the light from the light-emitting section 4. This makes it possible to obtain a desired emitted color for the light-emitting device 1. The light-transmitting member 3 may contain one type of wavelength converting material or multiple types of wavelength converting materials.

[0026] The light-transmitting member 3 may be composed of a wavelength converting material and a base material, or may be composed of only a wavelength converting material. Alternatively, the light-transmitting member 3 may be composed of a wavelength converting material as a base material and containing an inorganic material and / or a light diffusing material (described later). Alternatively, the light-transmitting member 3 may be composed of only a base material that does not contain a wavelength converting material.

[0027] When the light-transmitting member 3 is composed of a wavelength converting material and a base material, the wavelength converting material may be contained in the base material or may be disposed on the surface of the base material. When the wavelength converting material is disposed on the surface of the base material, the wavelength converting material can be disposed on the surface of the base material facing the light-emitting element 2. Furthermore, only the wavelength converting material may be disposed on the surface of the base material, or a resin containing the wavelength converting material may be disposed.

[0028] When the wavelength converting material is contained in a base material, the wavelength converting material may be dispersed or unevenly distributed in the base material.

[0029] Examples of materials for the base material include inorganic materials such as glass, ceramic, and sapphire, and organic materials such as resins or hybrid resins containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, phenolic resin, and fluororesin.

[0030] Known phosphors can be used as wavelength conversion materials. Examples of phosphors include yttrium-aluminum-garnet phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12:(Ce), terbium-aluminum-garnet-based phosphor (e.g., Tb3(Al,Ga)5O 12 :(Ce), CCA-based phosphor (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphor (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphor (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphor (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphor (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphor (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride-based phosphors, LSN-based phosphor (e.g., (La,Y)3Si6N 11 :Ce), BSESN-based phosphor (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphor (e.g., SrLiAl3N4:Eu), CASN-based phosphor (e.g., CaAlSiN3:Eu) or SCASN-based phosphor (e.g., (Sr,Ca)AlSiN3:Eu) and other nitride-based phosphors, KSF-based phosphor (e.g., K2SiF6:Mn), KSAF-based phosphor (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1.), or fluoride-based phosphors such as MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used.

[0031] The light-transmitting member 3 may contain a light diffusing material depending on the purpose. Light diffusing materials known in the art may be used. Examples of light diffusing materials that may be used include titanium oxide, silicon oxide, aluminum oxide, barium titanate, and yttrium aluminum perovskite (YAP).

[0032] As shown in the example of FIG. 3 , the first inorganic member 5 includes a first light-reflecting material 52, an alkali metal silicate 51, first pores 53, and an insulating member 7. The insulating member 7 is disposed in the first pores 53. The first inorganic member 5 includes the first light-reflecting material 52, thereby being able to reflect light emitted from the light-emitting unit 4. The first light-reflecting material 52 includes, for example, at least one selected from boron nitride, aluminum nitride, and aluminum oxide. Boron nitride, aluminum nitride, and aluminum oxide are materials with excellent thermal conductivity, and therefore, a first inorganic member 5 with excellent heat dissipation properties can be obtained. The first inorganic member 5 may further include a light-diffusing material such as zirconium oxide or titanium oxide.

[0033] The first light-reflecting material 52 is, for example, a plate-like (including scale-like) particle having two main surfaces. The first light-reflecting material 52 may be a primary particle, or a secondary particle formed by an aggregation of two or more primary particles. Alternatively, the first light-reflecting material 52 may be a mixture of primary particles and secondary particles.

[0034] The average aspect ratio of the primary particles of the first light-reflecting material 52 is preferably 10 or more, and more preferably 10 or more and 70 or less. When the first light-reflecting material 52 is boron nitride, the average aspect ratio of the first light-reflecting material 52 is, for example, 16.5 or more and 19.2 or less. When the first light-reflecting material 52 is aluminum oxide, the average aspect ratio of the first light-reflecting material 52 is, for example, 10 or more and 70 or less. The average aspect ratio of the first light-reflecting material 52 can be calculated, for example, by the following method.

[0035] (How to calculate the average aspect ratio) The average aspect ratio of the first light-reflecting material 52 is calculated by measuring the lengths of the major and minor axes of the first light-reflecting material 52 contained in the first inorganic member 5 in a cross section of the light-emitting device 1. First, a cross section that passes through the top surface 23 of the light-emitting element 2 of the light-emitting device 1 and is approximately perpendicular to the top surface 23 of the light-emitting element 2 is exposed. Next, the exposed cross section is mirror-polished. The mirror-polished cross section is then observed at a magnification of 2000 to 3000 times using a scanning electron microscope (SEM), and cross sections of the first light-reflecting material 52 are extracted from the obtained image, and a measurement region including the cross sections of approximately 1000 first light-reflecting materials 52 is selected.

[0036] Next, the length of the major axis and the length of the minor axis of each cross section of the extracted first light-reflecting material 52 are measured point by point using image analysis software, and the ratio of the length of the major axis to the length of the minor axis (aspect ratio) is calculated. The average value of the aspect ratios of 100 first light-reflecting materials 52 is then taken as the average aspect ratio.

[0037] The average particle size of the first light reflecting material 52 is preferably 0.6 μm or more and 43 μm or less. When the first light reflecting material 52 is boron nitride, the average particle size of the first light reflecting material 52 is, for example, 6 μm or more and 43 μm or less. When the first light reflecting material 52 is aluminum oxide, the average particle size of the first light reflecting material 52 is, for example, 0.6 μm or more and 10 μm or less.

[0038] Here, because deformation and deterioration of first light reflecting material 52 during the manufacturing process are slight, the shape and dimensions of the powder of first light reflecting material 52 are substantially identical to the shape and dimensions of first light reflecting material 52 contained in first inorganic member 5. Therefore, the average particle size of first light reflecting material 52 can be calculated, for example, by the following method.

[0039] (Method of calculating average particle size) The particle size of the powder of the first light reflecting material 52 is calculated using, for example, a scanning electron microscope "TM3030Plus" manufactured by Hitachi High-Technologies Corporation. First, one side of a double-sided carbon tape is attached to the specimen stage of the microscope, and then the powder of the first light reflecting material 52 is placed on the other side of the double-sided tape. The magnification of the microscope is set to 1000 to 2000 times, and images of 100 powder particles (particles) of the first light reflecting material 52 are obtained. Then, the particle size of each particle is measured using image analysis software.

[0040] In this specification, the particle size of the powder of first light-reflecting material 52 means the maximum diameter when viewed from one main surface of first light-reflecting material 52. Next, the median diameter of the measured particles is calculated, and this calculated value is used as the average particle size of first light-reflecting material 52. Note that the particle size of the powder of first light-reflecting material 52 may also be calculated by extracting a cross section of first inorganic member 5 using SEM and measuring it using image analysis software.

[0041] The first inorganic member 5 has improved heat resistance compared to when it contains a resin by containing the alkali metal silicate 51. Examples of the alkali metal silicate 51 include potassium silicate, sodium silicate, and lithium metasilicate.

[0042] The insulating member 7 can be made of a light-transmitting material. For example, the insulating member 7 can be made of resin or glass. This can increase the reliability of the first inorganic member 5. An example of the resin is silicone resin.

[0043] When the insulating member 7 is made of glass, for example, glass containing silicon dioxide is obtained by heating a mixture containing polysilazane and a solvent. The solvent may be completely volatilized, or a portion of the solvent may remain. Therefore, the insulating member 7 may be made of glass alone, or may be made of glass and a solvent.

[0044] The insulating member 7 is obtained by heating a mixture containing inorganic particles such as silicon dioxide and aluminum oxide and a solvent. The solvent may be completely volatilized or may remain partially unvolatilized.

[0045] The first inorganic member 5 covers at least a portion of the lower surface 42 of the light-emitting section 4. The lower surface 42 of the light-emitting section 4 and the lower surface 24 of the light-emitting element 2 are coincident, and the phrase "the first inorganic member 5 covers at least a portion of the lower surface 42 of the light-emitting section 4" here means that the first inorganic member 5 covers at least a portion of the lower surface of the semiconductor structure 21, excluding the lower surface of the electrode 22, on the lower surface 24 of the light-emitting element 2. In the example shown in FIG. 2 , the first inorganic member 5 covers the entire lower surface of the semiconductor structure 21, excluding the lower surface of the electrode 22, on the lower surface 24 of the light-emitting element 2. In the example shown in FIG. 2 , the first inorganic member 5 further covers the side surface 25 of the light-emitting element 2.

[0046] 4, the second inorganic member 6 includes a second light-reflecting material 62, an alkali metal silicate 61, and second pores 63. Gas A (e.g., air) is disposed in the second pores 63. By including the second light-reflecting material 62, the second inorganic member 6 can reflect light emitted from the light-emitting unit 4, similar to the first inorganic member 5. The second light-reflecting material 62, the alkali metal silicate 61, and the second pores 63 included in the second inorganic member 6 are similar to the first light-reflecting material 52, the alkali metal silicate 51, and the first pores 53 included in the first inorganic member 5, and therefore will not be described here. The material, shape, aspect ratio, and particle size of the second light-reflecting material 62 may be the same as those of the first light-reflecting material 52, or one or more of these may be different. Furthermore, the alkali metal silicate 61 contained in the second inorganic member 6 and the alkali metal silicate 51 contained in the first inorganic member 5 may be the same type of alkali metal silicate or different types of alkali metal silicates.

[0047] 2, the second inorganic member 6 covers the side surface 33 of the light-transmitting member 3, and the first inorganic member 5 covers the side surface 25 of the light-emitting element 2. This makes the light-emitting device 1 highly reliable. This can improve the steepness of the difference in luminance between the light-emitting section 4 (light-emitting region) and the second inorganic member 6 (non-light-emitting region) in the light-emitting state.

[0048] 2, the boundary line between the first inorganic member 5 and the second inorganic member 6 is a straight line parallel to the upper surface 41 of the light-emitting section 4. However, this is not limited thereto, and the boundary line between the first inorganic member 5 and the second inorganic member 6 may be a straight line inclined with respect to the upper surface 41 of the light-emitting section 4, or may be a curved line. Furthermore, the boundary line between the first inorganic member 5 and the second inorganic member 6 may be uneven.

[0049] 2, the periphery of the lower surface 32 of the light-transmitting member 3 is located outside the periphery of the upper surface 23 of the light-emitting element 2, and the first inorganic member 5 contacts an area of ​​the lower surface 32 of the light-transmitting member 3 located outside the periphery of the upper surface 23 of the light-emitting element 2. When the insulating member 7 disposed in the first pore 53 of the first inorganic member 5 is light-transmitting, part of the light emitted from the side surface 25 of the light-emitting element 2 passes through the first pore 53 of the first inorganic member 5 and is guided to the lower surface 32 of the light-transmitting member 3. This allows the light-emitting device 1 to improve the light extraction efficiency from the upper surface 31 of the light-transmitting member 3.

[0050] 2 , the second inorganic member 6 covers the side surface 33 of the light-transmitting member 3 but does not cover the side surface 25 of the light-emitting element 2. However, this is not limited thereto, and the second inorganic member 6 can cover the side surface 33 of the light-transmitting member 3 and also cover part or all of the side surface 25 of the light-emitting element 2. When part of the side surface 25 of the light-emitting element 2 is covered, the first inorganic member 5 covers the lower surface 24 side of the side surface 25 of the light-emitting element 2, and the second inorganic member 6 covers the upper surface 23 side of the side surface 25 of the light-emitting element 2.

[0051] 2 , the first inorganic member 5 covers the side surface 25 of the light-emitting element 2 but does not cover the side surface 33 of the light-transmitting member 3. However, this is not limited thereto, and the first inorganic member 5 can cover the side surface 25 of the light-emitting element 2 and also cover part of the side surface 33 of the light-transmitting member 3. In this case, the second inorganic member 6 covers the upper surface 31 side of the side surface 33 of the light-transmitting member 3, and the first inorganic member 5 covers the lower surface 32 side of the side surface 33 of the light-transmitting member 3.

[0052] FIG. 5 is a cross-sectional view taken along line II-II of FIG. 1 , schematically illustrating the relationship between the light-emitting section and the first pores 53 and second pores 63 of a light-emitting device according to one embodiment. As shown in FIG. 5 , the first inorganic member 5 and the second inorganic member 6 form the outer surface of the light-emitting device 1. The first pores 53 extend from the outer surface of the first inorganic member 5 to the surface facing the light-emitting section 4, and the insulating member 7 disposed in the first pores 53 preferably contacts the light-emitting section 4. This improves adhesion between the light-emitting element 2 and the first inorganic member. Because the first pores 53 and the second pores 63 are arranged three-dimensionally, in FIG. 5 , the portions of the first pores 53 and the second pores 63 that are directly visible in the cross-sectional view are indicated by solid lines, and the portions of the first pores 53 and the second pores 63 that are not directly visible in the cross-sectional view are indicated by dashed lines.

[0053] 6A to 6E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to one embodiment. An example of a method for manufacturing the light emitting device 1 of this embodiment will be described with reference to FIGS.

[0054] As shown in FIG. 6A , the manufacturing method of the light-emitting device 1 of this embodiment includes a step of preparing a light-emitting unit 4 having a first surface 42, a second surface 41 located opposite the first surface 42, and a side surface 43 connecting the first surface 42 and the second surface 41. The light-emitting unit 4 may be prepared by fabrication or purchase. In the example shown in FIG. 6A , one prepared light-emitting unit 4 is placed on a support S, with the second surface 41 of the light-emitting unit 4 facing the support S. Here, the first surface 42 corresponds to the bottom surface 42 of the light-emitting unit 4 of the light-emitting device 1 shown in FIG. 2 , and is therefore designated by the same reference numeral as the bottom surface 42. The second surface 41 corresponds to the top surface 41 of the light-emitting unit 4 of the light-emitting device 1, and is therefore designated by the same reference numeral as the top surface 41. The light-emitting unit 4, the light-emitting element 2, and the light-transmitting member 3 are similar to the light-emitting element 2 and light-transmitting member 3 in the light-emitting device 1 described above, and therefore will not be described here. Hereinafter, components common to the light-emitting device 1 may be omitted because they are similar to those of the light-emitting device 1.

[0055] The method for manufacturing the light emitting device 1 of this embodiment includes a step of preparing an inorganic member intermediate 14, as shown in FIG. 6B.

[0056] The process of preparing the inorganic member intermediate 14 includes the steps of mixing a light-reflecting material powder, silicon dioxide powder, and an alkali metal aqueous solution to prepare a mixture, coating the light-emitting section 4 with the mixture, and heating the mixture.

[0057] In the step of preparing the mixture, the concentration of the aqueous alkali metal solution is preferably 1 mol / L or more, for example, from the viewpoint of ease of curing and strength after curing. On the other hand, it is preferably 5 mol / L or less, from the viewpoint of reducing the precipitation of excess alkali metal after mixing. The aqueous alkali metal solution is, for example, a potassium hydroxide solution or a sodium hydroxide solution.

[0058] In the step of coating the mixture on the light-emitting section 4, the mixture coats at least a part of the first surface 42 of the light-emitting section 4 and the side surface 43 of the light-emitting section 4. In the example shown in Fig. 6B, the mixture coats the surface (end surface) of the electrode 22 opposite to the surface on the semiconductor structure 21 side.

[0059] In the step of heating the mixture, the mixture is heated to harden the mixture, forming an inorganic member intermediate 14. The inorganic member intermediate 14 contains an alkali metal silicate produced by the reaction of silicon dioxide contained in the mixture with an alkali metal aqueous solution. Furthermore, as the mixture hardens, pores are formed by the evaporation of water from the alkali metal aqueous solution. In the step of heating the mixture, for example, the mixture is heated at a second temperature T2 of 150°C or higher and 250°C or lower for 10 minutes to 3 hours.

[0060] As shown in FIGS. 6C and 6D , the manufacturing method for the light emitting device 1 of this embodiment includes a step of disposing an insulating member 7 in pores inside the inorganic member intermediate 14. In the example of FIG. 6C , uncured insulating member 7 is ejected from a nozzle N onto a surface of the inorganic member intermediate 14 opposite to the surface facing the support S, and is allowed to penetrate into the pores inside the inorganic member intermediate 14. The insulating member 7 is then cured. As shown in FIG. 6D , in the inorganic member intermediate 14, a portion 14b into which the insulating member 7 has penetrated becomes the first inorganic member 5, and a portion 14a into which the insulating member 7 has not penetrated becomes the second inorganic member 6. The light reflecting material contained in the first inorganic member 5 is the first light reflecting material, the alkali metal silicate contained in the first inorganic member 5 is the alkali metal silicate 51, and the pores contained in the first inorganic member 5 are the first pores 53. Furthermore, the light reflecting material contained in the second inorganic member 6 is the second light reflecting material, the alkali metal silicate contained in the second inorganic member 6 is the alkali metal silicate 61, and the pores contained in the second inorganic member 6 are the second pores 63. The insulating member 7 is the same as the insulating member 7 in the light emitting device 1 described above, and therefore a description thereof will be omitted here.

[0061] The boundary line between the first inorganic member 5 and the second inorganic member 6 can be formed at a desired position in the thickness direction of the inorganic member intermediate 14 (i.e., the direction perpendicular to the surface facing the support S) by adjusting the time for which the insulating member 7 is penetrated into the inorganic member intermediate 14. By shortening the time for which the insulating member 7 is penetrated into the inorganic member intermediate 14, the boundary line between the first inorganic member 5 and the second inorganic member 6 is formed on the surface of the inorganic member intermediate 14 opposite to the surface facing the support S. On the other hand, by lengthening the time for which the insulating member 7 is penetrated into the inorganic member intermediate 14, the boundary line between the first inorganic member 5 and the second inorganic member 6 is formed on the surface of the inorganic member intermediate 14 facing the support S. Furthermore, by depositing the insulating member 7 evenly on the surface of the inorganic member intermediate 14 opposite to the surface facing the support S and penetrating the insulating member 7 into the inorganic member intermediate 14, the boundary line between the first inorganic member 5 and the second inorganic member 6 can be a straight line parallel to the upper surface 41 of the light-emitting section 4.

[0062] 6E, the method for manufacturing the light emitting device 1 of this embodiment can include a step of removing the first inorganic member 5 covering the end face of the electrode 22 (i.e., the portion 14b of the inorganic member intermediate 14 into which the insulating member 7 has permeated) to expose the electrode 22. The first inorganic member 5 can be removed by, for example, grinding.

[0063] The manufacturing method for the light emitting device 1 of this embodiment has been described with reference to an example in which one light emitting section 4 is placed on the support S, as shown in FIGS. 6A to 6E. However, this is not limiting, and multiple light emitting sections 4 may be placed on the support S. When multiple light emitting sections 4 are placed on the support S, in the step of preparing the inorganic member intermediate 14, when the mixture is coated on the light emitting sections 4, the mixture coats the multiple light emitting sections 4 collectively. Furthermore, after the step of placing the insulating member 7 in the pores inside the inorganic member intermediate 14, the first inorganic member 5 and the second inorganic member 6 between adjacent light emitting sections 4 are cut. This makes it possible to produce a light emitting device having one or more light emitting elements.

[0064] Fig. 7 is a schematic cross-sectional view showing a first modified example of a light emitting device according to an embodiment, and Fig. 8 is a partially enlarged view of the portion of the second inorganic member 6 enclosed by a dashed line in Fig. 7. The light emitting device 101 of the first modified example differs from the light emitting device 1 shown in Figs. 1 to 5 in that it includes a second coating member 13. As shown in Figs. 7 and 8, the light emitting device 101 includes the second coating member 13 that covers the outer surface of the second inorganic member 6, and the second coating member 13 does not cover the inner walls of the second pores 63.

[0065] The light emitting device 101 also contains a gas A disposed within the second pores 63. The second covering member 13 in the light emitting device 101 is preferably made of a material that does not easily penetrate from the outer surface of the second inorganic member 6 into the second pores 63. This allows the gas A to remain disposed within the second pores 63 even when the second covering member 13 is covered. The light emitting device 101 can improve the mechanical strength of the second inorganic member 6 while maintaining the steepness of the difference in luminance between the light emitting section 4 and the second inorganic member 6 in the light emitting state. For example, a silicone resin can be used as the second covering member 13 in the light emitting device 101.

[0066] The second covering member 13 in the light emitting device 101 may be made of the same material as the insulating member 7, or may be made of a different material. For example, if the second covering member 13 and the insulating member 7 are made of the same resin, the time from applying the resin of the second covering member 13 to the outer surface of the second inorganic member 6 until it hardens can be shorter than the time from applying the resin of the insulating member 7 to the inorganic member intermediate 14 until it hardens. Alternatively, the viscosity of the second covering member 13 can be made higher than the viscosity of the insulating member 7. For example, a thickener can be added to the second covering member 13 to make the viscosity of the second covering member 13 higher than the viscosity of the insulating member 7, or a solvent can be added to the insulating member 7 to make the viscosity of the insulating member 7 lower than the viscosity of the second covering member 13. This allows the insulating member 7 to penetrate into the pores (first pores 53) of the inorganic member intermediate 14, while reducing the penetration of the second covering member 13 from the outer surface of the second inorganic member 6 into the second pores 63.

[0067] 8, the second covering member 13 blocks the openings of the second pores 63 on the outer surface. In this case, a portion of the second covering member 13 may or may not enter the second pores 63. Note that the second covering member 13 is not limited to blocking the openings of the second pores 63 on the outer surface, and the second covering member 13 does not necessarily have to block some or all of the openings of the second pores 63 on the outer surface.

[0068] FIG. 9 is a schematic cross-sectional view showing a second modified example of a light-emitting device according to an embodiment, and FIG. 10 is a partially enlarged view of the portion of the second inorganic member enclosed by the dashed line in FIG. 9 . The light-emitting device 102 of the second modified example differs from the light-emitting device 101 of the first modified example in that the portion covered by the second covering member 13 is different. As shown in FIGS. 9 and 10 , the light-emitting device 102 includes a second covering member 13 that covers the outer surface of the second inorganic member 6, a portion of the second covering member 13 covering the inner wall of the second pore 63, and the second pore 63 contains a gas A disposed in the space surrounded by the second covering member 13. For example, glass can be used as the second covering member 13 in the light-emitting device 102. Glass can be obtained, for example, by heating a mixture containing polysilazane and a solvent. The mixture containing polysilazane and a solvent is placed in the second pore 63 and then heated to volatilize the solvent. As a result, a portion of second covering member 13 covers the inner wall of second pore 63, and second pore 63 can contain gas A disposed in the space surrounded by second covering member 13. Light emitting device 102 provides the same effects as light emitting device 101.

[0069] The second covering member 13 in the light-emitting device 102 may be made of the same material as the insulating member 7, or may be made of a different material. For example, if the second covering member 13 and the insulating member 7 are both glass obtained by heating a mixture containing polysilazane and a solvent, the proportion of the solvent contained in the mixture for obtaining the second covering member 13 can be made higher than the proportion of the solvent contained in the mixture for obtaining the insulating member 7. This increases the space created by the evaporation of the solvent in the second pores 63 of the second inorganic member 6 (i.e., the proportion of gas A occupying the second pores 63 increases), thereby increasing the steepness of the difference in luminance between the light-emitting section 4 and the second inorganic member 6 in the light-emitting state. Furthermore, decreases the space created by the evaporation of the solvent in the first pores 53 (i.e., the proportion of gas A occupying the first pores 53 decreases), thereby improving reliability.

[0070] In the light emitting device 101 of the first modified example and the light emitting device 102 of the second modified example, the second covering member 13 can further cover at least one of the upper surface 31 of the light-transmitting member 3 and the outer surface of the first inorganic member 5 .

[0071] FIG. 11 is a schematic cross-sectional view showing a third modified example of the light emitting device according to the embodiment. The light emitting device 103 of the third modified example differs from the light emitting device 1 shown in FIGS. 1 to 5 in that it does not include a light-transmitting member 3. As shown in FIG. 11, the light emitting device 1 does not include a light-transmitting member 3. That is, the light emitting section 4 is composed only of the light emitting element 2. The upper surface 41 of the light emitting section 4 is the light emitting surface of the light emitting device 1. In the case of a light emitting device 102 that does not include a light-transmitting member 3, the upper surface 23 of the light emitting element 2 is the light emitting surface of the light emitting device 103. The light emitting device 103 of the third modified example exhibits the same effects as the light emitting device 1 shown in FIGS. 1 to 5.

[0072] FIG. 12 is a schematic cross-sectional view showing a fourth modified example of the light-emitting device according to the embodiment. The light-emitting device 104 of the fourth modified example differs from the light-emitting device 103 of the third modified example in the portions covered by the first inorganic member 5 and the second inorganic member 6. In the light-emitting device 103 of the third modified example shown in FIG. 11, the first inorganic member 5 is disposed on the entire lower surface of the semiconductor structure 21, excluding the lower surface of the electrode 22, on the lower surface 24 of the light-emitting element 2. In contrast, as shown in FIG. 12, in the light-emitting device 104 of the fourth modified example, the first inorganic member 5 is disposed on the lower surface of the semiconductor structure 21, excluding the lower surface of the electrode 22 and the periphery of the electrode 22, on the lower surface 24 of the light-emitting element 2. The second inorganic member 6 is disposed in a region of the lower surface of the semiconductor structure 21 where the first inorganic member 5 is not disposed. The second inorganic member 6 also covers the side surface 25 of the light-emitting element 2 and the side surface of the first inorganic member 5. The light-emitting device 104 of the fourth modified example exhibits the same effects as the light-emitting device 103 of the third modified example.

[0073] In the light emitting device 103 of the third modified example and the light emitting device 104 of the fourth modified example, a protective film or an optical lens for protecting the light emitting element 2 can be disposed on the upper surface 41 of the light emitting section 4 (light emitting element 2). The protective film can act as an anti-reflection film. The protective film can be made of, for example, silicon dioxide. The protective film can be formed by, for example, a sputtering method or an ALD (Atomic Layer Deposition) method. The optical lens can be made of, for example, glass. When the second covering member 13 is disposed on the upper surface 23 of the light emitting element 2, the protective film or the optical lens can be disposed on the upper surface 23 of the light emitting element 2 via the second covering member 13.

[0074] FIG. 13 is a schematic cross-sectional view showing a fifth modified example of the light emitting device according to the embodiment. The light emitting device 105 of the fifth modified example differs from the light emitting device 1 shown in FIGS. 1 to 5 in that it includes a plurality of light emitting sections 4. As shown in FIG. 13, the light emitting device 105 includes a plurality of light emitting sections 4. In the example shown in FIG. 13, the plurality of light emitting sections 4 are adjacent to each other. A first inorganic member 5 is disposed between the light emitting elements 2 of the adjacent light emitting sections 4, and a second inorganic member 6 is disposed between the light-transmissive members 3 of the adjacent light emitting sections 4. The light emitting device 105 of the fifth modified example exhibits the same effects as the light emitting device 1 shown in FIGS. 1 to 5.

[0075] FIG. 14 is a schematic cross-sectional view showing a light-emitting module according to one embodiment. The light-emitting module 1000 includes a light-emitting device 1, a wiring board 8, and a first covering member 9. As shown in FIG. 14, the light-emitting module 1000 includes a wiring board 8 having wiring 15 to which the light-emitting unit 4 is electrically connected, and a first covering member 9 disposed on the wiring board 8 and covering the outer surface of the first inorganic member 5. This improves adhesion between the wiring board 8 and the first inorganic member 5. Furthermore, the height of the upper end of the first covering member 9 from the upper surface 81 of the wiring board 8 can be set equal to or less than the height of the upper end of the first inorganic member 5 from the upper surface 81 of the wiring board 8. This reduces penetration of the first covering member 9 into the second pores 63 of the second inorganic member 6 when the first covering member 9 is applied in an uncured state. As a result, it is possible to prevent a decrease in the steepness of the difference in brightness between the light-emitting unit 4 and the second inorganic member 6 in the light-emitting state.

[0076] 14, the electrode 22 of the light-emitting unit 4 is connected to the wiring 15 of the wiring board 8 via a conductive adhesive member 10. As the conductive adhesive member 10, any one of a bump made of gold, silver, copper, or the like, a gold-tin solder, or a brazing material made of a low-melting point metal can be used.

[0077] The wiring board 8 is a component on which the light-emitting device 1 is disposed. The wiring board 8 includes wiring 15 and a base material 12 supporting the wiring 15. For example, the wiring board 8 includes upper wiring 15a disposed on the upper surface of the base material 12 on which the light-emitting device 1 is disposed, and lower wiring 15b disposed on the lower surface opposite the upper surface. The base material 12 has, for example, a substantially rectangular parallelepiped or cubic shape. The base material 12 is preferably made of an insulating material that is less permeable to light emitted from the light-emitting unit 4 and external light. Examples of materials for the base material 12 include ceramics such as aluminum oxide, aluminum nitride, silicon nitride, and mullite; resins such as epoxy resin, silicone resin, modified epoxy resin, urethane resin, phenolic resin, polyimide resin, BT resin, and polyphthalamide; semiconductors such as silicon; and metals such as copper and aluminum, as well as composites thereof. Among these, ceramics, which have excellent heat dissipation properties, are preferred for use as the base material 12.

[0078] The upper wiring 15a includes wiring electrically connected to the light-emitting unit 4 of the light-emitting device 1. The lower wiring 15b includes an external connection terminal electrically connected to an external power supply. The upper wiring 15a and the lower wiring 15b can be made of, for example, a metal such as iron, copper, nickel, aluminum, gold, silver, platinum, titanium, tungsten, or palladium, or an alloy containing at least one of these metals. Furthermore, the wiring board 8 can include relay wiring 15c, located inside or on at least one of the side surfaces of the base material 12, for connecting the upper wiring 15a and the lower wiring 15b.

[0079] The wiring board 8 does not necessarily have to have the bottom surface wiring 15b. In this case, an external connection terminal can be disposed on the top surface of the base material 12 at a position different from the position of the top surface wiring 15a that is electrically connected to the light-emitting unit 4.

[0080] The first covering member 9 includes an insulating material. Examples of insulating materials used for the first covering member 9 include resins or hybrid resins containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, acrylic resin, phenol resin, bismaleimide triazine resin, and polyphthalamide resin. Among these, it is particularly preferable to use silicone resin, which has excellent light resistance, heat resistance, electrical insulation, and flexibility.

[0081] The first covering member 9 may further contain one or more selected from particles having varistor properties, carbon filler, and light-reflecting particles. When the first covering member 9 contains light-reflecting particles, the light emitting device 1 can reduce the amount of light from the light emitting section 4 passing through the first inorganic member 5 and emitting to the outside from the outer surface of the first inorganic member 5, thereby improving the light extraction efficiency from the upper surface 41 of the light emitting section 4. For example, titanium oxide can be used as the light-reflecting particles. When the first covering member 9 contains carbon filler, the light emitting device 1 can improve its heat dissipation properties. When the first covering member 9 contains particles having varistor properties, the light emitting device 1 can improve its ESD (Electrostatic Discharge) resistance.

[0082] The particles having varistor properties used in the first coating member 9 are preferably at least one selected from BaTiO3, SrTiO3, ZnO, BiO, CoO, MnO, SbO, CrO, NiO, SiN, and SiO, with zinc oxide (ZnO) being particularly preferred. The purity of the zinc oxide is preferably 90% or more, more preferably 95% or more, and particularly preferably 97% or more. Compared to other oxides, zinc oxide has a significantly more nonlinear current-voltage characteristic, acting as an insulator in regions where the applied voltage is small and as a conductor in regions where the voltage is large. Zinc oxide can achieve high creepage insulation. It also has high stability and reliability even when a circuit voltage is constantly applied. The zinc oxide content in the particles having varistor properties is preferably 85% by weight or more, more preferably 90% by weight or more, and particularly preferably 95% by weight or more.

[0083] At least one of the insulating member 7, the first inorganic member 5, and the second inorganic member 6 can contain the above-mentioned particles having varistor properties. The particles having varistor properties may contain the same type of material as the particles having varistor properties used in the first coating member 9, or may be made of a different type of material.

[0084] The light reflecting material contained in the first covering member 9 is, for example, titanium oxide.

[0085] The light-emitting module 1000 may include one light-emitting device 1 or multiple light-emitting devices 1 on one wiring substrate 8. Furthermore, the light-emitting device arranged on the wiring substrate 8 is not limited to the light-emitting device 1, but may be light-emitting device 101, 102, 103, or 104.

[0086] (Aspects of the present invention) The present invention includes the following aspects. <Aspect 1> a light-emitting portion having a lower surface, an upper surface located opposite to the lower surface, and a side surface connecting the lower surface and the upper surface; a first inorganic member including a first light-reflecting material, an alkali metal silicate, and first pores, the first inorganic member covering at least a portion of the lower surface of the light-emitting portion; a second inorganic member including a second light-reflecting material, an alkali metal silicate, and second pores, the second inorganic member being disposed on an outer periphery of the top surface of the light-emitting portion; In the light emitting device, an insulating member is disposed in the first pore, and a gas is disposed in the second pore. <Aspect 2> the first pores penetrate from an outer surface of the first inorganic member to a surface facing the light-emitting unit, In the light-emitting device according to aspect 1, the insulating member disposed in the first pore is in contact with the light-emitting portion. <Aspect 3> In the light-emitting device according to aspect 1, the light-emitting section includes a light-emitting element and a light-transmitting member disposed on the light-emitting element. <Aspect 4> the first inorganic member covers a side surface of the light-emitting element, In the light-emitting device according to aspect 3, the second inorganic member covers the side surface of the light-transmitting member. <Aspect 5> The insulating member is light-transmitting, the peripheral edge of the lower surface of the light-transmitting member is located outside the peripheral edge of the upper surface of the light-emitting element, In the light-emitting device according to aspect 3 or 4, the first inorganic member is in contact with a region of the lower surface of the light-transmitting member that is positioned outside the periphery of the upper surface of the light-emitting element. <Aspect 6> In the light-emitting device according to any one of aspects 1 to 5, the insulating member is made of resin or glass. <Aspect 7> a wiring substrate having wiring to which the light-emitting unit is electrically connected; a first covering member disposed on the wiring board and covering an outer surface of the first inorganic member; A light-emitting device according to any one of aspects 1 to 6, wherein the height of the upper end of the first covering member from the upper surface of the wiring substrate is equal to or less than the height of the upper end of the first inorganic member from the upper surface of the wiring substrate. <Aspect 8> Aspect 8 is the light-emitting device according to aspect 7, wherein the first coating member includes a resin and particles having varistor properties. <Aspect 9> Aspect 8 is the light-emitting device according to aspect 7, wherein the first covering member includes a resin and light-reflective particles. <Aspect 10> a second coating member that coats the outer surface of the second inorganic member; Aspect 7. The light-emitting device according to any one of aspects 1 to 6, wherein the second covering member does not cover the inner wall of the second pore. <Aspect 11> a second coating member that coats the outer surface of the second inorganic member; a portion of the second covering member covers an inner wall of the second pore; In the light-emitting device according to any one of aspects 1 to 6, the second pore contains a gas disposed in a space surrounded by the second covering member. [Explanation of symbols]

[0087] 1, 101, 102, 103, 104 Light-emitting device 2 Light-emitting element 21 Semiconductor structure 22 electrodes 23 Top side 24 Bottom side 25 Side 3 Translucent material 31 Top side 32 Bottom surface 33 Side 4 Light-emitting part 41 Top side 42 Bottom surface 5. First inorganic component 51 Alkali metal silicates 52 1st light reflecting material 53 First pore 6. Second inorganic component 61 Alkali metal silicates 62 2nd light reflective material 63 Second pore 7 Insulating material 8. Wiring board 9 First covering member 13 Second covering member A gas S support 1000 Light Emitting Modules

Claims

1. a light-emitting portion having a lower surface, an upper surface located opposite to the lower surface, and a side surface connecting the lower surface and the upper surface; a first inorganic member including a first light-reflecting material, an alkali metal silicate, and first pores, the first inorganic member covering at least a portion of the lower surface of the light-emitting portion; a second inorganic member including a second light-reflecting material, an alkali metal silicate, and second pores, the second inorganic member being disposed on an outer periphery of the top surface of the light-emitting portion; The light emitting device, wherein an insulating member is disposed in the first pore, and a gas is disposed in the second pore.

2. the first pores penetrate from an outer surface of the first inorganic member to a surface facing the light-emitting unit, The light emitting device according to claim 1 , wherein the insulating member disposed in the first pore is in contact with the light emitting portion.

3. The light emitting device according to claim 1 , wherein the light emitting section comprises a light emitting element and a light-transmitting member disposed on the light emitting element.

4. the first inorganic member covers a side surface of the light-emitting element, The light emitting device according to claim 3 , wherein the second inorganic member covers a side surface of the light-transmitting member.

5. The insulating member is light-transmitting, the peripheral edge of the lower surface of the light-transmitting member is located outside the peripheral edge of the upper surface of the light-emitting element, The light emitting device according to claim 3 , wherein the first inorganic member is in contact with a region of the lower surface of the light-transmitting member that is positioned outside a periphery of the upper surface of the light emitting element.

6. The light emitting device according to claim 5 , wherein the insulating member is made of resin or glass.

7. a wiring substrate having wiring to which the light-emitting unit is electrically connected; a first covering member disposed on the wiring board and covering an outer surface of the first inorganic member; The light emitting device according to claim 6 , wherein the height of the upper end of the first covering member from the upper surface of the wiring substrate is equal to or less than the height of the upper end of the first inorganic member from the upper surface of the wiring substrate.

8. The light emitting device according to claim 7 , wherein the first covering member includes a resin and particles having varistor properties.

9. The light emitting device according to claim 7 , wherein the first covering member includes a resin and light reflective particles.

10. a second coating member that coats an outer surface of the second inorganic member; The light emitting device according to claim 6 , wherein the second covering member does not cover an inner wall of the second pore.

11. a second coating member that coats an outer surface of the second inorganic member; a portion of the second covering member covers an inner wall of the second pore; The light emitting device according to claim 6 , wherein the second pore contains a gas disposed in a space surrounded by the second covering member.

Images