Exposure apparatus, exposure method, and method of manufacturing article

Abstract

To accurately detect the position of a substrate.SOLUTION: An exposure apparatus has: a projection optical system which projects an image of a pattern of an original plate onto a substrate; an original plate stage which mounts the original plate; a substrate stage which mounts the substrate; a side surface detection part which acquires first information showing the position of a side surface of the substrate mounted on the substrate stage; and a mark measurement part which is arranged above the original plate stage, where an alignment mark is arranged on an upper surface of the side surface detection part, the mark measurement part measures the alignment mark via the projection optical system, acquires second information showing the position of the side surface detection part, and controls the substrate stage on the basis of the first information and the second information.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to an exposure apparatus, an exposure method, and a method for manufacturing an article. [Background technology]

[0002] Exposure apparatuses have traditionally been used when manufacturing display elements such as flat panel displays and semiconductor elements using photolithography technology. A substrate is placed on a substrate stage by a substrate transport device. In the exposure apparatus, a process called pre-alignment is carried out to measure the position of the side (edge) of the substrate held on the stage device. Pre-alignment is a process in which the position of the side of the substrate is measured with an accuracy of several μm to several tens of μm before detecting and positioning an alignment mark formed on the substrate at high magnification.

[0003] At this time, the amount of deviation of the substrate relative to the projection optical system can be calculated from the information on the installation position of the pre-alignment device and the measurement result of the amount of deviation of the substrate, and the amount of drive of the substrate stage in the exposure process can be corrected.Patent Document 1 discloses content related to non-contact pre-alignment, which can detect the position of the side surface of the substrate by irradiating side light onto the substrate and detecting the light reflected by the side surface of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2017-116868 Summary of the Invention [Problem to be solved by the invention]

[0005] However, if there is a manufacturing error in the mounting position of the pre-alignment device, there is a risk that the position of the side of the substrate will be measured incorrectly. As a result, when the pattern image of the original is exposed onto the substrate, the position of the substrate stage cannot be correctly corrected, and the position of the pattern formed on the substrate may deviate from the desired position. This may result in a deviation of, for example, several tens of microns, and may result in a defective product.

[0006] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an exposure apparatus that is advantageous in detecting the position of a substrate with high precision. [Means for solving the problem]

[0007] In order to achieve the above-mentioned object, an exposure apparatus as one aspect of the present invention comprises a projection optical system that projects an image of a pattern of an original onto a substrate, an original stage on which the original is placed, a substrate stage on which the substrate is placed, a side detection unit that acquires first information that indicates the position of a side of the substrate placed on the substrate stage, and a mark measurement unit that is arranged above the original stage, wherein an alignment mark is arranged on an upper surface of the side detection unit, and the mark measurement unit measures the alignment mark via the projection optical system, acquires second information that indicates the position of the side detection unit, and controls the substrate stage based on the first information and the second information. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide an exposure apparatus that is advantageous in detecting the position of a substrate with high precision. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus. [Figure 2] FIG. 2 is a schematic diagram of the exposure apparatus as seen from the Y direction. [Figure 3] FIG. 10 is a diagram showing an original mark. [Figure 4]FIG. 2 is a diagram illustrating a configuration of a side surface detection unit. [Figure 5] FIG. 10 is a diagram for explaining the arrangement of a side surface detection unit. [Figure 6] 10 is a diagram illustrating that an alignment mark is provided on the side surface detection unit. FIG. [Figure 7] 10A and 10B are diagrams showing measurement results of alignment marks measured by a mark measurement unit. [Figure 8] 10 is a flowchart showing a method for determining a center shift amount. [Figure 9] FIG. 10 is a diagram showing coordinate information for determining a center shift amount. [Figure 10] FIG. 10 is a diagram illustrating a configuration according to a second embodiment. [Figure 11] 1 is a flowchart of a method for manufacturing an article. [Figure 12] FIG. 10 is a reference diagram for explaining Center Shift. DETAILED DESCRIPTION OF THE INVENTION

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to designate the same components, and redundant explanations will be omitted.

[0011] First Embodiment FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus 100. The exposure apparatus 100 has an original stage 4 on which an original 3 is placed, a substrate stage 7 on which a substrate 6 is placed, an illumination optical system 1 that illuminates the original 3, and a projection optical system 5 that projects a pattern image of the original 3 onto the substrate 6. The original 3 and the substrate 6 are arranged at positions that are approximately optically conjugate via the projection optical system 5 (the object plane and image plane of the projection optical system 5). The exposure apparatus 100 is a lithography apparatus used in, for example, a lithography process in the manufacturing process of FPDs and semiconductor devices. The exposure apparatus 100 is also an apparatus that performs an exposure process on, for example, a glass or silicon substrate having a resist (photosensitive agent) applied to the surface of the substrate 6.

[0012] In this specification and drawings, the substrate holding surface of the substrate stage 7 is shown in an XYZ coordinate system with the XY plane, the scanning direction of the substrate is the Y direction, the direction parallel to the substrate holding surface and perpendicular to the Y direction is the X direction, and the direction perpendicular to the XY plane is the Z direction. Rotation about the Z direction is defined as θ. Figure 1 shows exposure apparatus 100 in the YZ plane as viewed from the X direction. Figure 2 is a schematic diagram showing exposure apparatus 100 in the XZ plane as viewed from the Y direction.

[0013] The mark measurement unit 2 has a drive mechanism (not shown) and is driven in the X and Y directions to measure a group of marks 8 on the original stage 4, a group of marks 9 on the substrate stage 7, and a group of marks 10 on the original. The mark measurement unit 2 is provided above the original 3. FIG. 3 is a diagram of an alignment mark 19 (original mark) within the group of marks on the original 3. The mark measurement unit 2 has a focus adjustment mechanism (not shown) and is able to change the focus according to the measurement mark for measurement. The alignment mark 19 (original mark) only needs to be provided on the mounting surface of the original 3, and may be provided on the original 3 or the original stage 4.

[0014] The control unit 11 determines and controls the drive amount of each drive mechanism of the exposure apparatus 100. The illumination optical system 1 is composed of a light source unit such as an ultra-high pressure mercury lamp (not shown), a wavelength selection filter, a lens group, a shutter, etc. The illumination optical system 1 irradiates the original 3 with light of a wavelength suitable for exposure. The original stage 4 on which the original 3 is placed is scanned in the Y direction by a drive mechanism (not shown). A reflecting mirror (not shown) is arranged on the original stage 4, which reflects measurement light from a laser interferometer (not shown) arranged outside the original stage 4. The laser interferometer receives the reflected measurement light and constantly monitors and measures the position of the original stage 4. The control unit 11 controls the position and speed of the original stage 4 based on the measurement results from the laser interferometer.

[0015] The projection optical system 5 has mirrors and lenses (not shown) that reflect and refract the exposure light, thereby projecting an image of the pattern formed on the original 3 onto the substrate 6. The substrate stage 7 on which the substrate 6 is placed is driven in the X, Y, Z, and θ directions by a drive mechanism (not shown) under the control of a control unit 11. The substrate stage 7 is equipped with multiple reflecting mirrors (not shown) that reflect measurement light from a laser interferometer (not shown) that is located outside the substrate stage 7. The laser interferometer receives the reflected measurement light and constantly monitors and measures the position of the substrate stage 7. The control unit 11 controls the position and speed of the substrate stage 7 based on the measurement results from the laser interferometer.

[0016] The control unit 11 functions as a processing unit that determines the drive amount of each drive mechanism during exposure using the mark position information acquired by the mark measurement unit 2. The control unit 11 is composed of a data storage unit 12, a drive amount calculation unit 13, and a drive instruction unit 14. The data storage unit 12 stores the mark position information measured by the mark measurement unit 2, drive offsets of various drive axes, drive parameters such as sensitivity, and various measurement data acquired by the exposure apparatus. The drive amount calculation unit 13 determines drive instruction amounts for various drive axes such as the original stage 4 and substrate stage 7 during exposure. The drive instruction unit 14 outputs drive instructions to each drive mechanism using the drive instruction amounts for each drive mechanism determined by the drive amount calculation unit 13. The control unit 11 is configured as a hardware device, for example, by a computer device including a CPU (Central Processing Unit) and memory. In this case, the data storage unit 12 is realized by the memory, and the drive amount calculation unit 13 and drive instruction unit 14 are realized by the CPU.

[0017] The side surface detection unit 15 can be disposed at multiple locations around the substrate stage 7, for example, at three locations. After the substrate 6 is placed on the substrate stage 7, the side surface detection unit 15 measures the position of the side surface of the substrate 6, and based on the measurement results, the placement deviation of the substrate 6 relative to the substrate stage 7, i.e., the positional deviation of the substrate 6 in the X, Y, and θ directions, is calculated. Then, while correcting the positional deviation of the substrate 6 in the X, Y, and θ directions, the substrate stage 7 is moved so that the alignment mark formed on the substrate 6 is within the field of view of the mark measurement unit 2. The positional deviation of the substrate 6 in the X and Y directions can be corrected by moving the substrate stage 7 within the XY plane, and the positional deviation of the substrate 6 in the θ direction can be corrected by rotating the substrate stage 7 around the Z axis.

[0018] Fig. 4 is a schematic diagram showing the configuration of the side surface detection unit 15. The side surface detection unit 15 has an illumination unit 17 that directs light onto the side surface of the substrate 6, and a light receiving unit 18 that is disposed below the side surface of the substrate 6 placed on the substrate stage 7 and receives light reflected from the side surface of the substrate 6. Fig. 4(a) is a diagram of the side surface detection unit 15 as viewed from the Y direction, and Fig. 4(b) is a diagram of the side surface detection unit 15 as viewed from the Z direction. The arrow in Fig. 4(a) indicates the optical path of light from the illumination unit 17 that is reflected by the side surface of the substrate 6 and enters the light receiving unit 18.

[0019] As explained above, side surface detection unit 15 can determine the position of substrate 6 by measuring the side surface of substrate 6 at multiple locations. However, since side surface detection unit 15 is required to measure the position of substrate 6 with a measurement accuracy of several μm to several tens of μm, there is a risk of erroneously measuring the position of substrate 6 if the attachment position of side surface detection unit 15 is misaligned by several μm to several tens of μm. This misalignment could result in the position of the pattern formed on the substrate being shifted from the desired position.

[0020] The overall deviation of the exposure position is also called center shift. For example, a center shift of approximately 10 μm can result in a defective product. Figure 12 is a reference diagram showing a state in which the exposure shot area is shifted due to center shift. The entire shot area is shifted by the amount indicated by the arrow from the ideal area 21 originally intended for exposure, resulting in exposure processing being performed on exposure area 20. Center shift affects not only the exposure process using the exposure device but also the processes before and after it. Therefore, strict management is required to prevent defects throughout the entire product manufacturing process. In this embodiment, the position of the side surface detector 15 is measured to obtain the deviation amount from the ideal position of the side surface detector 15, thereby enabling the position of the substrate 6 to be determined with greater precision.

[0021] Center shift occurs as a combination of various components, such as an error in the position where the substrate 6 is placed and an error in the optical components during exposure. If the error in the position where the substrate 6 is placed is large, the influence of that error becomes dominant and the center shift may become large. One of the objectives of this embodiment is to reduce the error in the position where the substrate 6 is placed.

[0022] The arrangement and configuration of the side surface detection unit 15 in this embodiment will be described. FIG. 5 is a diagram showing the positional relationship between the original 3, original stage 4, substrate 6, substrate stage 7, and side surface detection unit 15. For example, one side surface detection unit 15 can be arranged in the X direction and two in the Y direction relative to the substrate 6. In addition to this configuration, two side surface detection units 15 can be arranged, one in the X direction and one in the Y direction, or if it is sufficient to measure the substrate position in only one direction, only one can be arranged in the X direction or the Y direction. Furthermore, if it is simply desired to determine the rotational component, two side surface detection units 15 can be arranged in at least one of the X direction or the Y direction.

[0023] 6 is a diagram showing the position of alignment mark 16 on side surface detection unit 15, including illumination unit 17 and light receiving unit 18. It is assumed here that alignment mark 16 on side surface detection unit 15 is attached at an ideal position on side surface detection unit 15.

[0024] In this embodiment, the side surface detection unit 15 is provided with alignment marks 16 (16a, 16b, 16c) so that the position of the side surface detection unit 15 can be measured. Specifically, the alignment marks 16 are arranged on the upper surface of the illumination unit 17. The alignment marks 16 are arranged on the upper surface of the side surface detection unit 15 (illumination unit 17). Furthermore, the alignment marks 16 are arranged in exposed positions so as not to overlap with the substrate 6 in the +Z direction when the substrate 6 is placed on the substrate stage 7. Furthermore, the height of the alignment marks 16 is adjusted so that they are in focus during measurement by the mark measurement unit 2. Specifically, the alignment marks 16 arranged on the upper surface of the illumination unit 17 can be at the same height as the upper surface of the substrate 6 placed on the substrate stage 7. The light receiving unit 18 is provided on the substrate stage 7.

[0025] The alignment mark 16a on the side surface detector 15a has its origin at the center of the substrate stage 7, and the positions in the X and Y directions that are the designed ideal positions are (Xad, Yad), respectively. Similarly, the designed ideal positions of the side surface detectors 15b and 15c are (Xbd, Ybd) and (Xcd, Ycd) in the X and Y directions. In order to measure and correct the position of the substrate 6 placed on the substrate stage 7, the side surface detector 15 is preferably attached at a designed position from the center of the substrate stage 7.

[0026] Furthermore, because the original pattern is exposed onto the substrate 6 via the projection optical system 5, it is necessary to ensure that the side surface detection unit 15 is properly installed and to consider the possibility that the exposure position on the substrate 6 may deviate from the ideal position depending on the state (optical components) of the projection optical system 5. Therefore, it is preferable to simultaneously (within the same field of view) measure the alignment marks 19 (original marks) in the mark group on the original 3 and the alignment marks 16 on the side surface detection unit 15 via the projection optical system 5. Figure 7 shows the measurement results obtained by simultaneously (within the same field of view) measuring the alignment marks 19 and 16 using the mark measurement unit 2. By simultaneously measuring both marks, the difference between the ideal and actual positions of the side surface detection unit 15 can be calculated using the position of the original 3 measured without using the projection optical system 5 as a reference, and this difference can be corrected. This allows the exposure process to be performed when the relative positions of the original 3 and the substrate 6 are in an ideal positional relationship.

[0027] Fig. 8 is a flowchart showing the flow of correcting the center shift amount. The flowchart in Fig. 8 may be performed, for example, immediately after installation of exposure apparatus 100 is completed, or may be performed periodically during production as needed. Each step can be performed by controlling each part of exposure apparatus 100 with control unit 11.

[0028] First, the side surface positions of the substrate 6 placed on the substrate stage 7 are measured by each of the side surface detectors 15a, 15b, and 15c (step S100, first acquisition step). The information indicating the side surface positions of the substrate 6 placed on the substrate stage 7, acquired in step S100, is also referred to as first information. Note that step S100 may be performed at a different timing, as long as it is performed before step S106, which will be described later.

[0029] Next, the original stage 4 and the substrate stage 7 are driven so that the central positions of the original 3 and the substrate stage 7 coincide (step S101). After that, the mark measurement unit 2 is moved onto the alignment mark 19 in the group of marks on the original (step S102).

[0030] Next, the substrate stage 7 is driven in the XY directions to a position where the alignment mark 16a arranged on the side surface detection unit 15a can be measured by the mark measurement unit 2 (step S103). Steps S102 and S103 may be processed in parallel. Next, the position of the alignment mark 16a is measured via the projection optical system 5 (step S104, second acquisition step). The information indicating the position of the side surface detection unit 15 acquired in step S104 is also referred to as second information. Note that the second information may be information indicating the difference between the designed position of the side surface detection unit 15 and the actual position of the side surface detection unit 15, obtained by measuring the alignment mark 16 via the projection optical system 5.

[0031] In step S104, alignment mark 19 in the group of marks on the original is also measured within the same field of view. In step S104, values ​​are obtained by subtracting the XY coordinates of alignment mark 19 in the group of marks on the original, with the center of original 3 as the origin, from the XY coordinates obtained when the substrate stage 7 is driven in the X and Y directions with the center of the substrate stage 7 as the origin. The amount of deviation of alignment mark 16a, measured in step S104 and relative to alignment mark 19 in the group of marks on the original, is added to the obtained value, and this value is set as the attachment position (Xam, Yam) of side surface detection unit 15a.

[0032] Next, it is determined whether measurements have been completed for all alignment marks 16 of side surface detection units 15 (step S105). If measurements for alignment marks 16b and 16c remain, the process returns to step S103.

[0033] The attachment position of side surface detection unit 15b acquired in steps S103 and S104 is again set to (Xbm, Ybm), and the attachment position of side surface detection unit 15c is set to (Xcm, Ycm). When measurement of all alignment marks has been completed, proceed to step S106.

[0034] Next, the center shift amount in the XYθ directions is calculated from the difference between the attachment position of each side surface detection unit 15a, 15b, and 15c calculated by measuring each mark and the ideal position (step S106). First, the center shift amount in the θ direction will be explained. Figure 9 is a schematic diagram of coordinate information for calculating the center shift amount. The center shift amount in the θ direction, Δθ, can be calculated using the following equation (1): Δθ=arctan((Xbm-Xcm) / (Ybm-Ycm))...Equation (1)

[0035] Next, the amount of center shift in the Y direction will be described. When the rotation component is corrected around the origin of the substrate stage 7 using the amount of center shift Δθ in the θ direction calculated by equation (1), the position coordinates (Xam′, Yam′) of the side surface detection unit 15a after θ correction can be calculated by the following equations (2) and (3). Xam′=Xam·cosΔθ−Yam·sinΔθ···Equation (2) Yam′=Xam·sinΔθ+Yam·cosΔθ····Formula (3)

[0036] From the position coordinates of the side surface detection unit 15a after this θ correction and the design value, the center shift amount ΔY in the Y direction is calculated by the following equation (4). ΔY=Yam′-Yad =Xam·sinΔθ+Yam·cosΔθ−Yad····Formula (4)

[0037] Next, the center shift amount in the X direction will be described. When the rotation component is corrected using the center shift amount Δθ in the θ direction calculated by equation (1), the position coordinates (Xbm′, Ybm′) and (Xcm′, Ycm′) of the side surface detection unit 15b and the side surface detection unit 15c can be calculated by the following equations (5) to (8). Xbm′=Xbm·cosΔθ−Ybm·sinΔθ····Formula (5) Ybm′=Xbm·sinΔθ+Ybm·cosΔθ···Formula (6) Xcm′=Xcm·cosΔθ−Ycm·sinΔθ····Formula (7) Ycm′=Xcm·sinΔθ+Ycm·cosΔθ····Formula (8)

[0038] The center shift amount ΔX in the X direction is calculated by calculating the average value of the differences between the position coordinates of the side surface detection unit 15b and the side surface detection unit 15c after the θ correction and their respective design values, using equation (9). ΔX=((Xbm′-Xbd)+(Xcm′-Xcd)) / 2 =(Xbm cosΔθ-Ybm sinΔθ-Xbd+Xcm cosΔθ-Ycm sinΔθ-Xcd) / 2...Equation (9)

[0039] The center shift amount calculated in step S106 is stored in the data storage unit 12. Finally, the center shift amounts ΔX, ΔY, and Δθ calculated in step S106 are corrected (added to the drive position of the substrate stage 7), and then the substrate stage 7 is driven (step S107, control step). Through the above operation, the pattern on the original can be exposed at the ideal position where the center shift amount has been corrected. The exposure method in this embodiment is characterized by including a first acquisition step, a second acquisition step, and a control step.

[0040] In this embodiment, the center shift amount can be corrected using only the functions within exposure apparatus 100. One method of measuring the center shift is to measure the exposed pattern using an external measurement device and measure the amount of deviation of the pattern from the center of the substrate. This method requires exposure of the substrate, development, and measurement by the measurement device, which poses the problem of taking a long time to measure the center shift. Compared to such methods, this embodiment is advantageous in terms of reducing the time required for measurement and, ultimately, improving productivity.

[0041] In this embodiment, an optical side surface detector 15 that detects the side surface position of the board in a non-contact manner has been described, but other configurations may also be used. Also, the side surface detector 15 may be a contact type that detects the side surface position of the board by contacting the side surface of the board.

[0042] In this embodiment, it is possible to accurately detect the position of the substrate 6 placed on the substrate stage 7. This makes it possible to reduce the center shift deviation and improve the exposure performance.

[0043] Second Embodiment In the first embodiment, an example focusing on one exposure apparatus was described. In this embodiment, an example in which multiple exposure apparatuses are connected via a network will be described. Note that the configuration of the exposure apparatuses is the same as in the first embodiment, and therefore description thereof will be omitted. Furthermore, matters not mentioned in this embodiment will follow the first embodiment.

[0044] 10 is a diagram showing an environment in which multiple exposure apparatuses 110, 120, and 130 are connected to a local network 140. In this embodiment, a method for correcting the Center Shift amount when a single substrate is exposed using multiple exposure apparatuses will be described.

[0045] Basically, it is preferable to add the center shift amounts ΔX, ΔY, and Δθ acquired by each of the exposure tools 110, 120, and 130 to the drive position of the substrate stage 7 and drive the substrate stage 7 using the method described in the first embodiment. However, there may be cases in which the drive position of the substrate stage 7 after adding the center shift amounts ΔX, ΔY, and Δθ is not within the drive range in all tools. In such cases, the substrate stage 7 is driven without adding the center shift amounts ΔX, ΔY, and Δθ, or is driven to the limit of the drive range and then exposed. In such cases, there is a risk that all or part of the center shift amounts ΔX, ΔY, and Δθ will remain uncorrected.

[0046] Therefore, the exposure process will be described when a single substrate is exposed using multiple devices and the drive position of the substrate stage 7 after adding the acquired center shift amounts ΔX, ΔY, and Δθ exceeds the range that the substrate stage 7 can drive.

[0047] First, we will explain the case where a substrate processed by exposure apparatus 110 is subsequently processed by exposure apparatus 120. As a premise, in exposure apparatus 110, the drive position of substrate stage 7 after addition of center shift amounts ΔX, ΔY, and Δθ is outside the drive range, and exposure is performed by driving it into the drive range. In exposure apparatus 120, the drive position of substrate stage 7 after addition of center shift amounts ΔX, ΔY, and Δθ is within the drive range.

[0048] The center shift amounts ΔXΔYΔθ obtained by the method of the first embodiment are stored in the data storage units 12 of the exposure apparatuses 110 and 120. At this time, the exposure apparatus 110 stores in the data storage unit 12 the amount by which the drive position after adding the center shift amounts ΔXΔYΔθ exceeds the range that can be driven by the substrate stage 7.

[0049] Here, the amount by which the drive position after adding the center shift amount ΔXΔYΔθ exceeds the range that can be driven by the substrate stage 7 is defined as the residual of the center shift amounts ΔX, ΔY, Δθ.

[0050] The exposure tool 110 transmits the center shift amounts ΔX, ΔY, and Δθ residual to the exposure tool 120 via the local network 140. The exposure tool 120 registers the center shift amounts ΔX, ΔY, and Δθ residual of the exposure tool 110 in the data storage unit 12.

[0051] During exposure by the exposure tool 120 in the subsequent step, first, the residual center shift amounts ΔX, ΔY, and Δθ of the exposure tool 110 in the preceding step, which are registered in the data storage unit 12 of the exposure tool 120, are added to the center shift amounts ΔX, ΔY, and Δθ of the exposure tool 120. By adding the center shift amounts ΔX, ΔY, and Δθ after the addition to the drive position of the substrate stage 7 during exposure processing, it becomes possible to perform exposure processing in which the residual center shift amounts ΔX, ΔY, and Δθ of the exposure tool 110 in the preceding step have been corrected.

[0052] Next, we will explain the case where a substrate that has been processed by exposure apparatus 120 is subsequently processed by exposure apparatus 130. It is assumed that the driving position of substrate stage 7 after adding center shift amounts ΔX, ΔY, and Δθ is within the driving range of exposure apparatus 120. Also, it is assumed that the driving position of substrate stage 7 after adding center shift amounts ΔX, ΔY, and Δθ is outside the driving range of exposure apparatus 130, and the substrate stage 7 is driven into the driving range to perform exposure.

[0053] First, the center shift amounts ΔX, ΔY, and Δθ obtained by the method described in the first embodiment for exposure tool 120 and exposure tool 130 are stored in the data storage unit 12 of each exposure tool. At this time, exposure tool 130 also stores the center shift amount ΔX, ΔY, and Δθ residual in data storage unit 12. Exposure tool 130 transmits the center shift amount ΔXΔYΔθ residual to exposure tool 120 via local network 140. Exposure tool 120 registers the center shift amount ΔXΔYΔθ residual of exposure tool 130 in data storage unit 12.

[0054] During exposure by the exposure tool 120 in the preceding process, first, the residual center shift amounts ΔX, ΔY, and Δθ of the exposure tool 130 in the following process, which are registered in the data storage unit 12 of the exposure tool 120, are added to the center shift amount ΔXΔYΔθ of the exposure tool 120. By adding the center shift amounts ΔX, ΔY, and Δθ after the addition to the drive position of the substrate stage 7 during exposure processing, it becomes possible to perform exposure processing in which the residual center shift amounts ΔX, ΔY, and Δθ of the exposure tool 130 in the following process have been corrected.

[0055] In this way, by sharing the center shift correction residuals between the exposure tools, exposure can be performed while reducing the influence of the center shift amounts ΔX, ΔY, and Δθ residuals, thereby reducing the relative positional deviation of patterns between different exposure tools.

[0056] <Embodiments of manufacturing methods of articles> The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing articles such as flat panel displays (FPDs), semiconductor devices, sensors, and optical elements. FIG. 11 is a flowchart of the method for manufacturing an article according to this embodiment. The method for manufacturing an article according to this embodiment includes a step of forming a latent image pattern on a photosensitive material coated on a substrate by exposure using the exposure apparatus 100 described above to obtain an exposed substrate (exposure step, step S11). The method also includes a step of developing the substrate exposed in this step to obtain a developed substrate (development step, step S12). Furthermore, the manufacturing method includes other well-known steps (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.) (processing step, step S13). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0057] Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist of the present invention.

[0058] The disclosure of the present specification includes at least the following exposure apparatus, exposure method, and article manufacturing method.

[0059] (Item 1) a projection optical system that projects an image of the pattern of the original onto the substrate; an original stage on which the original is placed; a substrate stage on which the substrate is placed; a side surface detection unit that acquires first information indicating the position of a side surface of the substrate placed on the substrate stage; a mark measurement unit disposed above the original stage; and an alignment mark is disposed on an upper surface of the side surface detection unit; the mark measurement unit measures the alignment mark via the projection optical system and acquires second information indicating a position of the side surface detection unit; an exposure apparatus that controls the substrate stage based on the first information and the second information;

[0060] (Item 2) 2. The exposure apparatus according to item 1, wherein the driving amount of the substrate stage is corrected based on the first information and the second information.

[0061] (Item 3) 3. The exposure apparatus described in item 1 or 2, wherein the mark measurement unit measures the original mark provided on the placement surface of the original and the alignment mark within the same field of view when acquiring the second information.

[0062] (Item 4) 4. The exposure apparatus according to any one of items 1 to 3, wherein the second information is information indicating the difference between the designed position of the side detection unit obtained by measuring the alignment mark via the projection optical system and the actual position of the side detection unit.

[0063] (Item 5) 5. The exposure apparatus according to any one of items 1 to 4, wherein the alignment mark is provided so as to be at the same height as the upper surface of the substrate placed on the substrate stage.

[0064] (Item 6) The side surface detection unit an illumination unit that makes light incident on a side surface of the substrate placed on the substrate stage; a light receiving unit that is disposed below a side surface of the substrate placed on the substrate stage and receives light reflected by the side surface of the substrate; 6. The exposure apparatus according to any one of items 1 to 5, comprising:

[0065] (Item 7) 7. The exposure apparatus according to item 6, wherein the alignment mark is provided on the upper surface of the illumination unit.

[0066] (Item 8) 8. The exposure apparatus according to item 6 or 7, wherein the side surface detection unit is provided on the substrate stage.

[0067] (Item 9) 9. The exposure apparatus according to any one of items 1 to 8, wherein the second information is shared with an apparatus other than the exposure apparatus.

[0068] (Item 10) An exposure method for exposing a substrate using an exposure apparatus having: a projection optical system that projects an image of a pattern of an original onto a substrate; an original stage on which the original is placed; a substrate stage on which the substrate is placed; a side surface detection unit that detects the position of a side surface of the substrate placed on the substrate stage; and a mark measurement unit that is arranged above the original stage, a first acquisition step of acquiring first information indicating a position of a side surface of the substrate placed on the substrate stage by the side surface detection unit; a second acquisition step of measuring an alignment mark disposed on the upper surface of the side surface detection unit via the projection optical system with the mark measurement unit to acquire second information indicating a position of the side surface detection unit; a control step of controlling the substrate stage based on the first information and the second information; An exposure method comprising:

[0069] (Item 11) an exposure step of exposing a substrate using the exposure apparatus according to any one of items 1 to 9 to obtain an exposed substrate; a developing step of developing the exposed substrate to obtain a developed substrate, A method for manufacturing an article, comprising manufacturing an article from the developed substrate. [Explanation of symbols]

[0070] 2 Mark measurement section 3 Original version 4 Original Stage 5 Projection optical system 6 PCB 7 Substrate stage 15 Side detection unit 19 Alignment Mark 100 Exposure device

Claims

1. a projection optical system that projects an image of the pattern of the original onto the substrate; an original stage on which the original is placed; a substrate stage on which the substrate is placed; a side surface detection unit that acquires first information indicating a position of a side surface of the substrate placed on the substrate stage; a mark measurement unit disposed above the original stage; and an alignment mark is disposed on an upper surface of the side surface detection unit; the mark measurement unit measures the alignment mark via the projection optical system and acquires second information indicating a position of the side surface detection unit; an exposure apparatus that controls the substrate stage based on the first information and the second information;

2. 2. An exposure apparatus according to claim 1, wherein the driving amount of the substrate stage is corrected based on the first information and the second information.

3. 2. The exposure apparatus according to claim 1, wherein the mark measurement unit measures the original mark provided on the placement surface of the original and the alignment mark within the same field of view when acquiring the second information.

4. 2. The exposure apparatus according to claim 1, wherein the second information is information indicating the difference between the design position of the side detection unit obtained by measuring the alignment mark via the projection optical system and the actual position of the side detection unit.

5. 2. An exposure apparatus according to claim 1, wherein the alignment mark is provided so as to be at the same height as the upper surface of the substrate placed on the substrate stage.

6. The side surface detection unit an illumination unit that makes light incident on a side surface of the substrate placed on the substrate stage; a light receiving unit that is disposed below a side surface of the substrate placed on the substrate stage and receives light reflected by the side surface of the substrate; 2. The exposure apparatus according to claim 1, further comprising:

7. 7. The exposure apparatus according to claim 6, wherein the alignment mark is provided on an upper surface of the illumination unit.

8. 7. An exposure apparatus according to claim 6, wherein the side surface detection unit is provided on the substrate stage.

9. 2. The exposure apparatus according to claim 1, wherein the second information is shared with an apparatus other than the exposure apparatus.

10. An exposure method for exposing a substrate using an exposure apparatus having: a projection optical system that projects an image of a pattern of an original onto a substrate; an original stage on which the original is placed; a substrate stage on which the substrate is placed; a side surface detection unit that detects the position of a side surface of the substrate placed on the substrate stage; and a mark measurement unit that is arranged above the original stage, a first acquisition step of acquiring first information indicating a position of a side surface of the substrate placed on the substrate stage by the side surface detection unit; a second acquisition step of measuring an alignment mark disposed on the upper surface of the side surface detection unit via the projection optical system with the mark measurement unit to acquire second information indicating a position of the side surface detection unit; a control step of controlling the substrate stage based on the first information and the second information; An exposure method comprising:

11. an exposure step of exposing a substrate using the exposure apparatus according to any one of claims 1 to 9 to obtain an exposed substrate; a developing step of developing the exposed substrate to obtain a developed substrate, A method for manufacturing an article, comprising manufacturing an article from the developed substrate.

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