Temperature control device for semiconductor wafer and temperature control method for semiconductor wafer

Abstract

To speedily respond even in a case heat locally enters a mounting surface on which a semiconductor wafer is mounted.SOLUTION: A temperature control device for a semiconductor wafer comprises: a mounting section including a mounting surface on which a semiconductor wafer is mounted and including a plurality of regions obtained by mutually dividing the mounting surface in a planar view; a temperature adjustment section which independently adjusts a temperature of the mounting section for each of the plurality of regions; a plurality of temperature detection sections which is provided in at least one of the plurality of regions and detects a temperature in the region on which the temperature adjustment is performed by the temperature adjustment section; and a control section which monitors detected temperatures of the plurality of temperature detection sections, selects a detected temperature with a large temperature change per unit time from among the plurality of monitored detected temperatures and controls the temperature adjustment section on the basis of the selected detected temperature. A plurality of temperature detection sections is provided for each of the plurality of regions and the control section controls the temperature adjustment section in one of two regions, which are adjacent to each other in the planar view, in the plurality of regions on the basis of the selected detected temperature and controls the temperature adjustment section in the other of the two regions.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a semiconductor wafer temperature control device and a semiconductor wafer temperature control method. [Background technology]

[0002] As a semiconductor wafer temperature control device, for example, Patent Document 1 below discloses a device for controlling the temperature of a semiconductor wafer to a target temperature and controlling the temperature distribution within the surface of the semiconductor wafer. The temperature control device includes a stage having multiple zones divided concentrically in a plan view, multiple temperature adjustment means provided in each zone, and a temperature sensor provided in each zone. Only one temperature sensor is provided in each zone. Meanwhile, Patent Document 2 below discloses a prober that inspects electrical characteristics by passing current through chips formed on a semiconductor wafer. The prober includes a wafer stage that holds the semiconductor wafer, probes made to match the electrode positions of the chip, and a temperature control device. The temperature control device includes a heating mechanism that heats the wafer stage and a cooling mechanism that cools the wafer stage. The cooling mechanism includes a stage cooling line that circulates a coolant through the wafer stage. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-167813 [Patent Document 2] Japanese Patent Application Laid-Open No. 2016-192485 Summary of the Invention [Problem to be solved by the invention]

[0004] In Patent Document 1, only one temperature sensor is provided in each zone of the stage, so if there is localized heat input to a zone, if the temperature sensor is located far away from the heat input position, it may take a long time to detect the temperature change, resulting in poor response. In Patent Document 2, the temperature is controlled by circulating the coolant, which may result in poor response to changes in the set temperature.

[0005] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a semiconductor wafer temperature control device and a semiconductor wafer temperature control method that can respond quickly even when there is localized heat input to the mounting surface on which the semiconductor wafer is placed. [Means for solving the problem]

[0006] A semiconductor wafer temperature control device according to one embodiment of the present invention comprises a mounting section having a mounting surface on which a semiconductor wafer is placed, the mounting surface having a plurality of regions that are partitioned from one another in a planar view; a temperature adjustment section that independently adjusts the temperature of the mounting section for each of the plurality of regions; temperature detection sections provided in multiple locations in at least one of the plurality of regions and that detect the temperature of the region whose temperature has been adjusted by the temperature adjustment section; and a control section that monitors the detected temperatures of the plurality of temperature detection sections, selects one of the monitored detected temperatures that has a large temperature change per unit time, and controls the temperature adjustment section based on the selected detected temperature, wherein a plurality of temperature detection sections are provided in each of the plurality of regions, and the control section controls the temperature adjustment section in one of two regions that are adjacent to each other in a planar view among the plurality of regions, and controls the temperature adjustment section in the other of the two regions based on the selected detected temperature.

[0007] A semiconductor wafer temperature control method according to one embodiment of the present invention includes a temperature monitoring step of monitoring the temperature at multiple locations in at least one of multiple regions that are partitioned from each other in a planar view; a wafer mounting step of mounting the semiconductor wafer on a mounting surface having the multiple regions; a temperature selection step of selecting the temperature at the multiple monitored locations that has the largest temperature change per unit time; and a temperature adjustment step of adjusting the temperature of the region based on the selected temperature, wherein the temperature monitoring step monitors the temperature at multiple locations in each of the multiple regions, and the temperature adjustment step adjusts the temperature of the region in one of two regions that are adjacent to each other in a planar view among the multiple regions, and adjusts the temperature of the region in the other of the two regions, based on the selected detected temperature. [Effects of the Invention]

[0008] According to the above aspect, even if there is localized heat input to the mounting surface on which the semiconductor wafer is mounted, it is possible to respond quickly. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a block diagram of a temperature control device according to an embodiment. [Figure 2] FIG. 2 is a plan view showing the arrangement of a temperature detection unit according to the embodiment. [Figure 3] Cross-sectional view of III-III in Figure 2. [Figure 4] 3 is a flowchart of a temperature control method according to an embodiment. [Figure 5] FIG. 6 is an explanatory diagram of temperature changes of a plurality of detected temperatures according to the embodiment. [Figure 6] FIG. 2 is a plan view illustrating an example of temperature control according to the embodiment. [Figure 7] FIG. 10 is a plan view illustrating an example of temperature control according to a first modified example of the embodiment. [Figure 8] FIG. 10 is a plan view illustrating an example of temperature control according to a second modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the embodiment, as an example of a temperature control device for a semiconductor wafer, a temperature control device for controlling the temperature of a semiconductor wafer having chips whose electrical characteristics are inspected by passing current (the temperature of the semiconductor wafer locally heated by passing current) to a target temperature will be described. For example, the semiconductor wafer is formed in a disk shape.

[0011] <Temperature control device> Fig. 1 is a block diagram of the temperature control device 1. Fig. 2 is a plan view showing the arrangement of the temperature detection unit 4. In Fig. 2, the semiconductor wafer W is indicated by a broken line, and the temperature detection unit 4 is indicated by a solid line. 1, the temperature control device 1 includes a mounting unit 2, a temperature adjusting unit 3, a temperature detecting unit 4 (see FIG. 2), and a control unit 5. Each element of the temperature control device 1 is controlled by the control unit 5.

[0012] <Placement section> The mounting portion 2 has a mounting surface 10 on which the semiconductor wafer W is placed. The mounting portion 2 is formed in a disk shape having the mounting surface 10 on a first surface 11. As shown in FIG. 2, the mounting surface 10 is formed in a circular shape in a plan view. For example, the outer diameter of the mounting surface 10 is set to be equal to or larger than the outer diameter of the semiconductor wafer W. The mounting surface 10 has a plurality of (for example, five in this embodiment) regions 20 to 24 that are partitioned from one another in a plan view.

[0013] The multiple regions 20-24 include a central region 20 provided in the center of the mounting surface 10 in a planar view, and multiple (for example, four in this embodiment) outer regions 21-24 provided radially outside the central region 20 in a planar view.

[0014] The central region 20 is formed in a perfect circular shape (circular shape) in a plan view. For example, when a semiconductor wafer W is placed on the placement surface 10, the central region 20 overlaps with the center portion of the semiconductor wafer W in a plan view.

[0015] For example, when a semiconductor wafer W is placed on the placement surface 10, the four outer regions 21-24 overlap the outer periphery of the semiconductor wafer W in a planar view. The four outer regions 21-24 are partitioned from one another in the circumferential direction. Each of the outer regions 21-24 is formed in an arc shape in a planar view. Each of the outer regions 21-24 has a shape obtained by dividing an annular region surrounding the central region 20 into four equal parts in the circumferential direction in a planar view. That is, the four outer regions 21-24 have the same shape in a planar view. The four outer regions 21-24 are a first outer region 21, a second outer region 22, a third outer region 23, and a fourth outer region 24. The first outer region 21, the second outer region 22, the third outer region 23, and the fourth outer region 24 are arranged in order in a counterclockwise direction around the central region 20 in a planar view.

[0016] FIG. 3 is a cross-sectional view taken along line III-III in FIG. As shown in Fig. 3, the mounting portion 2 has recesses 13 that open to a second surface 12 opposite to the first surface 11. The recesses 13 do not open to the first surface 11 (mounting surface 10). A plurality of recesses 13 are provided in each of the plurality of regions 20 to 24 (see Fig. 2). For example, four recesses 13 are provided in the central region 20, and three recesses 13 are provided in each of the outer regions 21 to 24.

[0017] <Temperature adjustment part> The temperature adjustment unit 3 adjusts the temperature of the mounting unit 2 independently for each of the multiple regions 20 to 24. For example, the temperature adjustment unit 3 includes a thermoelectric element 30 such as a Peltier element. For example, a thermoelectric element 30 is provided in each of the multiple regions 20 to 24. For example, when electricity is applied to the multiple thermoelectric elements 30, each of the regions 20 to 24 can be heated or cooled independently. The thermoelectric elements 30 in each of the regions 20 to 24 are controlled by the control unit 5 (see FIG. 1).

[0018] The temperature adjustment unit 3 is provided on the second surface 12 of the mounting unit 2. The temperature adjustment unit 3 has through holes 31 that communicate with the recesses 13. A plurality of through holes 31 are provided corresponding to the recesses 13. For example, four through holes 31 are provided in the central region 20, and three are provided in each of the outer regions 21 to 24.

[0019] A cooling unit 35 for cooling the temperature adjustment unit 3 is provided on the surface of the temperature adjustment unit 3 opposite to the surface facing the mounting unit 2. For example, the cooling unit 35 is a water-cooled plate. For example, the water-cooled plate has cooling paths 36 through which cooling water can flow. For example, the cooling paths 36 are provided in each of the multiple regions 20 to 24. For example, by driving a pump (not shown) to flow cooling water through each cooling path 36, each of the regions 20 to 24 can be cooled independently. The pumps corresponding to each of the regions 20 to 24 are controlled by the control unit 5 (see FIG. 1).

[0020] The cooling unit 35 has insertion holes 37 that connect to the through holes 31 of the temperature adjustment unit 3. A plurality of insertion holes 37 are provided corresponding to the through holes 31. For example, four of the insertion holes 37 are provided in the central region 20, and three are provided in each of the outer regions 21 to 24.

[0021] <Temperature detection section> The temperature detection unit 4 detects the temperatures of the regions 20 to 24 (see FIG. 2) whose temperatures are adjusted by the temperature adjustment unit 3. For example, the temperature detection unit 4 includes a temperature sensor 40 such as a resistance temperature detector (RTD) or a thermocouple (TC). A plurality of temperature sensors 40 are provided in each of the regions 20 to 24. For example, as shown in FIG. 2, four temperature sensors 40 are provided in the central region 20 and three in each of the outer regions 21 to 24. As shown in FIG. 3, the temperature sensors 40 are disposed in the recess 13 of the mounting unit 2 through the insertion holes 37 of the cooling unit 35 and the through holes 31 of the temperature adjustment unit 3.

[0022] As shown in FIG. 2, the temperature sensors 40 are spaced apart from one another in both the circumferential and radial directions of the mounting surface 10 in a plan view. The temperature sensors 40 are spaced apart from one another in the central region 20 and each of the outer regions 21-24 in a plan view. For example, the four temperature sensors 40 in the central region 20 are arranged at the same position in the radial direction and at equal intervals in the circumferential direction. For example, of the three temperature sensors 40 in each of the outer regions 21-24, the middle one is arranged more inward than the other two in the radial direction and the three are spaced apart from one another in the circumferential direction. The detected temperatures of each temperature sensor 40 are input to the control unit 5 (see FIG. 1).

[0023] <Control unit> The control unit 5 monitors the temperatures detected by the multiple temperature sensors 40. The control unit 5 selects the temperature with the largest temperature change per unit time from the multiple monitored detected temperatures. For example, the control unit 5 selects the temperature with the largest average temperature change per unit time from the multiple monitored detected temperatures. The control unit 5 controls the temperature adjustment unit 3 based on the selected detected temperature. For example, the control unit 5 performs PID control (Proportional Integral Derivative Controller) on the temperature adjustment unit 3 based on the selected detected temperature so that the temperature of a predetermined region (for example, at least one of the multiple regions 20 to 24) becomes a target temperature.

[0024] In this embodiment, the controller 5 selects the temperature having the largest average temperature change per unit time from among the plurality of monitored detected temperatures, but this is not limiting. For example, the controller 5 may select the temperature having the largest average temperature change per unit time from among the plurality of monitored detected temperatures. In other words, the controller 5 may select the temperature having the largest temperature change per unit time from among the plurality of monitored detected temperatures, and control the temperature adjustment unit 3 based on the selected detected temperature.

[0025] <Temperature control method> FIG. 4 is a flowchart of the temperature control method. The temperature control method includes a temperature monitoring step (step S1 in FIG. 4), a wafer placement step (step S2 in FIG. 4), a wafer inspection step (step S3 in FIG. 4), a temperature selection step (step S4 in FIG. 4), and a temperature adjustment step (step S5 in FIG. 4).

[0026] In the temperature monitoring step, the temperature is monitored at multiple locations in at least one of the multiple regions 20-24 that are partitioned from one another in a planar view. For example, in the temperature monitoring step, the temperature is monitored at multiple locations in each of the multiple regions 20-24. For example, in the temperature monitoring step, all of the multiple temperature sensors 40 provided in each of the multiple regions 20-24 are constantly monitored. After the temperature monitoring step, the process proceeds to the wafer placement step (step S2 in FIG. 4).

[0027] For example, in the wafer placing step, a semiconductor wafer W is placed on a placing surface 10 having a plurality of regions 20-24 (step S2 in FIG. 4). For example, in the wafer placing step, a disk-shaped semiconductor wafer W is placed so that it entirely overlaps the placing surface 10, which is circular in plan view. After the wafer placing step, the process proceeds to a wafer inspection step (step S3 in FIG. 4).

[0028] In the wafer inspection step, the semiconductor wafer W placed on the placement surface 10 is inspected. For example, local heat input occurs due to the inspection of the semiconductor wafer W. After the wafer inspection step, the process proceeds to a temperature selection step (step S4 in FIG. 4).

[0029] In the temperature selection step, the temperature with the largest temperature change per unit time is selected from among the temperatures monitored at multiple locations. For example, in the temperature selection step, the temperature with the largest average temperature change per unit time is selected from among the temperatures monitored at multiple locations.

[0030] 5 is an explanatory diagram of temperature changes of a plurality of detected temperatures, in which the vertical axis represents temperature and the horizontal axis represents time. For example, as shown in FIG. 5, in the temperature selection step, the temperature whose maximum temperature change per unit time (time t1 to t2) is equal to or less than the temperature adjustment start threshold Th is selected from among the monitored detected temperatures (graphs A1 to A3).

[0031] For example, when heat is locally input to a predetermined region of the support surface 10, the temperature changes of the three temperature sensors 40 (see FIG. 2) provided in the predetermined region differ from one another. For example, as shown in FIG. 5, assume that, of the temperatures detected by the three temperature sensors 40 (graphs A1 to A3), the maximum value of the temperature change per unit time is equal to or less than the temperature adjustment start threshold Th for two of them (two graphs A1 and A2). For example, the detected temperature of the one of the two temperature sensors 40 closest to the heat input position (graph A1) rises sharply. On the other hand, the detected temperature of the one of the two temperature sensors 40 farthest from the heat input position (graph A2) rises gradually. For example, in the temperature selection step, the detected temperature of the temperature sensor 40 (graph A1) is selected. After the temperature selection step, the process proceeds to the temperature adjustment step (step S5 in FIG. 4).

[0032] In the temperature adjustment step, the temperature of a predetermined region is adjusted based on the selected temperature (graph A1). For example, in the temperature adjustment step, the temperature of the first outer region 21 (see FIG. 2) is adjusted based on the temperature detected by the temperature sensor 40 (graph A1).

[0033] <Temperature control> FIG. 6 is a plan view for explaining an example of temperature control. As described above, the semiconductor wafer has a chip whose electrical characteristics are inspected by passing a current through it. In Fig. 6, the chip 50, which is rectangular in plan view, is indicated by a dashed line, the semiconductor wafer is not shown, and the temperature detection unit 4 is indicated by a solid line. For example, as shown in Figure 6, when the electrical characteristics of chip 50 are inspected by passing current through it, heat is locally input to the portion of mounting surface 10 that overlaps with chip 50 in a planar view (part of first outer region 21 in the example of Figure 6).

[0034] Here, one of the three temperature sensors 40 provided in the first outer region 21 (the temperature sensor 41 indicated by a black circle) overlaps with the chip 50 in a planar view. On the other hand, the other two of the three temperature sensors 40 provided in the first outer region 21 (the temperature sensors 42 indicated by dotted circles) are disposed away from the chip 50 in a planar view. Therefore, one of the three temperature sensors 40 (the temperature sensor 41 indicated by a black circle) experiences the largest temperature change per unit time. Therefore, by adjusting the temperature of the first outer region 21 based on one of the three temperature sensors 40 (the temperature sensor 41 indicated by a black circle), it is possible to quickly capture temperature changes in the first outer region 21 compared to adjusting the temperature of the first outer region 21 based on the other two (the temperature sensor 42 indicated by dotted circles).

[0035] <Action and effect> As described above, the temperature control device 1 of this embodiment includes a mounting section 2 having a mounting surface 10 on which a semiconductor wafer W is placed, the mounting surface 10 having a plurality of regions 20-24 that are partitioned from one another in a planar view, a temperature adjustment section 3 that independently adjusts the temperature of the mounting section 2 for each of the plurality of regions 20-24, a plurality of temperature detection sections 4 that are provided in at least one of the plurality of regions 20-24 and detect the temperature of the region whose temperature has been adjusted by the temperature adjustment section 3, and a control section 5 that monitors the temperatures detected by the plurality of temperature detection sections 4, selects the one with the largest temperature change per unit time from the plurality of monitored detected temperatures, and controls the temperature adjustment section 3 based on the selected detected temperature. According to this configuration, the temperature is monitored at multiple locations in at least one of the multiple regions 20-24 that are mutually partitioned in a planar view, the semiconductor wafer W is placed on the mounting surface 10 having the multiple regions 20-24, the temperature at the multiple monitored locations that has the largest temperature change per unit time is selected, and the temperature of the region can be adjusted based on the selected temperature. Therefore, even if there is localized heat input to the mounting surface 10 on which the semiconductor wafer W is placed, a quick response is possible.

[0036] For example, if only one temperature sensor is provided in each region of the mounting surface, if there is localized heat input to a region, it may take a long time to detect the temperature change and the response may be poor if the temperature sensor is located far from the heat input position. In contrast, according to the configuration of this embodiment, multiple temperature sensors 40 are provided in at least one of the multiple regions 20-24, so even if there is localized heat input to the regions 20-24, at least one of the multiple temperature sensors 40 is located closer to the heat input position than the others. This reduces the time required to detect the temperature change and improves the response. Additionally, in this embodiment, the temperature of each of the regions 20 to 24 is controlled by a thermoelectric element 30 such as a Peltier element, which allows for better response to changes in the set temperature compared to when temperature is controlled by circulating a coolant. Furthermore, in this embodiment, by selecting the temperature with the largest temperature change per unit time from the temperatures at multiple monitored locations and adjusting the temperature of the region based on the selected temperature, it is possible to adjust the temperature of the region to an optimal temperature while simplifying temperature control compared to adjusting the temperature of the region based on all monitored temperatures. That is, in this embodiment, while multiple temperature monitoring locations (monitoring points) are provided in a given region, there is only one temperature control location (control point, for example, temperature sensor 41 indicated by the black circle in Figure 6), so temperature adjustment to the target temperature can be performed quickly and accurately.

[0037] Furthermore, in this embodiment, the temperature is controlled using a thermoelectric element 30 such as a Peltier element, eliminating the need for a heating mechanism and a cooling mechanism, which are required when controlling the temperature by circulating a coolant. This reduces energy consumption and the space required for installing the equipment.

[0038] In this embodiment, the support surface 10 is formed in a circular shape in a plan view. The temperature detection units 4 are arranged spaced apart from one another in both the circumferential direction and the radial direction of the support surface 10 in a plan view. Therefore, even if heat is locally input to any position on the mounting surface 10 on which the semiconductor wafer W is mounted, a quick response is possible.

[0039] In this embodiment, the multiple regions 20-24 include a central region 20 that is provided in the center of the mounting surface 10 in a plan view and has a circular shape in a plan view, and multiple outer regions 21-24 that are circumferentially separated from one another radially outside the central region 20 in a plan view and have an arc shape in a plan view. A plurality of temperature detection units 4 are provided in each of the multiple regions 20-24. The multiple temperature detection units 4 are arranged apart from one another in the central region 20 and the multiple outer regions 21-24 in a plan view. Therefore, when a disk-shaped semiconductor wafer W is placed on the placement surface 10, even if local heat input occurs at any position in each of the regions 20 to 24, a quick response is possible.

[0040] In this embodiment, the mounting section 2 is formed in a plate shape having a mounting surface 10 on a first surface 11. The temperature adjustment section 3 is provided on a second surface 12 of the mounting section 2, which is opposite to the side on which the mounting surface 10 is provided. The mounting section 2 has a recess 13 that opens on the second surface 12. The temperature adjustment section 3 has a through hole 31 that communicates with the recess 13. The temperature detection section 4 is disposed in the recess 13 through the through hole 31. Therefore, the temperature detection unit 4 can accurately detect the temperature of the region through the recess 13 of the mounting portion 2. In addition, when the semiconductor wafer W is mounted on the mounting surface 10, the temperature detection unit 4 can be positioned so as not to get in the way.

[0041] The temperature control method of this embodiment monitors the temperature at multiple locations in at least one of multiple regions 20-24 that are separated from each other in a planar view, places a semiconductor wafer W on a mounting surface 10 having multiple regions 20-24, selects the temperature at the multiple monitored locations that has the largest temperature change per unit time, and adjusts the temperature of the region based on the selected temperature. Therefore, even if there is localized heat input to the mounting surface 10 on which the semiconductor wafer W is mounted, a quick response can be achieved.

[0042] <Other embodiments> In the above-described embodiment, an example in which the mounting surface is formed in a circular shape in a plan view has been described, but this is not limiting. For example, the mounting surface may be formed in a rectangular shape in a plan view. For example, the planar shape of the mounting surface can be changed according to required specifications, such as the shape of the semiconductor wafer.

[0043] In the above-described embodiment, an example has been described in which the plurality of temperature detecting units are arranged at intervals in both the circumferential and radial directions of the mounting surface in a plan view, but this is not limiting. For example, the plurality of temperature detecting units do not have to be arranged at intervals in both the circumferential and radial directions of the mounting surface in a plan view. For example, the arrangement of the plurality of temperature detecting units can be changed according to required specifications.

[0044] In the above-described embodiment, the plurality of regions includes a central region that is provided at the center of the mounting surface in a plan view and has a circular shape in a plan view, and a plurality of outer regions that are circumferentially separated from each other radially outside the central region in a plan view and have an arc shape in a plan view. However, this is not limited to this. For example, the plurality of regions may include a plurality of annular regions that are concentric with the central region in a plan view. For example, the shape and arrangement of each region can be changed according to required specifications.

[0045] In the above-described embodiment, an example has been described in which a plurality of temperature detection units are provided in each of a plurality of regions, but this is not limiting. For example, a plurality of temperature detection units may be provided in only one of the plurality of regions. For example, it is sufficient that a plurality of temperature detection units are provided in at least one of the plurality of regions. For example, the number and installation locations of the temperature detection units can be changed according to required specifications.

[0046] In the above-described embodiment, an example was given in which the control unit monitors the detected temperatures of multiple temperature detection units provided in a predetermined area (first outer area 21 in the example of Figure 6), selects the monitored detected temperature with the largest temperature change per unit time, and controls the temperature adjustment unit based on the selected detected temperature, but this is not limited to this. 7, the control unit may control the temperature adjustment unit in one of two adjacent regions in a plan view among the plurality of regions (first outer region 21 in the example of FIG. 7), and also control the temperature adjustment unit in the other of the two regions (second outer region 22 in the example of FIG. 7), based on the selected detected temperature. This configuration allows for a quick response even when local heat input to first outer region 21 of mounting surface 10 on which a semiconductor wafer is mounted causes a thermal effect on the adjacent second outer region 22. For example, when controlling the temperature adjustment unit in the second outer region 22, the control unit may select the detected temperature detected by the temperature detection unit (temperature sensor 43 shown by the white circle) closest to the temperature detection unit (temperature sensor 41 shown by the black circle) in the first outer region 21 among the multiple temperature detection units (three temperature sensors 40) in the second outer region 22, and control the temperature adjustment unit in the second outer region 22 based on the selected detected temperature.

[0047] In the above-described embodiment, an example was given in which the temperature is monitored at multiple locations in a predetermined area of ​​multiple regions that are partitioned from each other in a planar view, a semiconductor wafer is placed on a mounting surface having multiple regions, the temperature at the multiple monitored locations with the largest temperature change per unit time is selected, and the temperature of the region is adjusted based on the selected temperature, but this is not limited to this. For example, as shown in Fig. 8, the temperature may be monitored at multiple locations in all of the multiple regions, and the temperature at the monitored location with the largest temperature change per unit time may be selected, and the temperatures of all of the regions may be adjusted based on the selected temperature. For example, when controlling the temperature adjustment units in each of the regions 20-24, the control unit may control the temperature adjustment units in each of the regions 20-24 based on only one control point in each of the regions 20-24 (for example, the temperature detected by the temperature sensor 41 indicated by the black circle in Fig. 8). For example, the mode of temperature adjustment in each region may be changed according to required specifications.

[0048] In the above-described embodiment, the mounting portion is formed in a plate shape having a mounting surface on a first surface thereof, but this is not limiting. For example, the mounting portion may be formed in a block shape having a mounting surface on a first surface thereof. For example, the shape of the mounting portion can be changed according to required specifications.

[0049] In the above-described embodiment, the temperature adjustment unit is provided on the second surface of the mounting unit opposite to the mounting surface, but this is not limiting. For example, the temperature adjustment unit may be built into the mounting unit. For example, the installation mode of the temperature adjustment unit can be changed depending on the required specifications.

[0050] In the above-described embodiment, an example has been described in which the temperature detection unit is disposed in the recess of the mounting unit through the through-hole of the temperature adjustment unit and detects the temperature of the region through the recess of the mounting unit, but this is not limited thereto. For example, the temperature detection unit may detect the temperature of the region without passing through the recess of the mounting unit. For example, the temperature detection unit may be a non-contact temperature sensor. For example, the configuration of the temperature detection unit may be changed according to required specifications.

[0051] In the above-described embodiment, an example of a semiconductor wafer temperature control method has been described in which temperature monitoring is performed before wafer placement (a transition to the wafer placement process after the temperature monitoring process), but this is not limiting. For example, temperature monitoring may be performed after wafer placement (a transition to the temperature monitoring process after the wafer placement process). For example, the timing of temperature monitoring may be changed depending on required specifications.

[0052] In the above-described embodiment, a temperature control device for controlling the temperature of a semiconductor wafer having chips whose electrical characteristics are inspected by passing current through it (the temperature of the semiconductor wafer to which heat is locally input by passing current through it) to a target temperature has been described as an example of a temperature control device for a semiconductor wafer, but this is not limiting. For example, the temperature control device may be applied to a temperature control device for controlling the temperature of a semiconductor wafer that does not have chips whose electrical characteristics are inspected by passing current through it to a target temperature. For example, the temperature control device may be applied to a temperature control device for controlling the temperature of a semiconductor wafer such as a silicon wafer to a target temperature. For example, the temperature control device may be used in a dry process. For example, the usage manner of the temperature control device can be changed depending on the required specifications.

[0053] Although the embodiments of the present invention have been described above, the present invention is not limited to these, and additions, omissions, substitutions, and other modifications to the configuration are possible within the scope of the spirit of the present invention, and the above-described embodiments can also be combined as appropriate. [Explanation of symbols]

[0054] 1...Temperature control device, 2...Placement portion, 3...Temperature adjustment portion, 4...Temperature detection portion, 5...Control portion, 10...Placement surface, 11...First surface, 12...Second surface, 13...Recess, 20...Central region (region), 21...First outer region (region), 22...Second outer region (region), 23...Third outer region (region), 24...Fourth outer region (region), 30...Thermoelectric element, 31...Through hole, W...Semiconductor wafer

Claims

1. a mounting section having a mounting surface on which a semiconductor wafer is mounted, the mounting surface having a plurality of regions partitioned from one another in a plan view; a temperature adjusting unit that adjusts the temperature of the placement unit independently for each of the plurality of regions; a plurality of temperature detection units provided in at least one of the plurality of regions, the temperature detection units detecting the temperature of the region whose temperature has been adjusted by the temperature adjustment unit; a control unit that monitors the temperatures detected by the plurality of temperature detection units, selects a temperature that has a large temperature change per unit time from the plurality of monitored detected temperatures, and controls the temperature adjustment unit based on the selected detected temperature, a plurality of the temperature detection units are provided in each of the plurality of regions; The control unit controls the temperature adjustment unit in one of two regions that are adjacent to each other in a plan view among the plurality of regions, based on the selected detected temperature, and controls the temperature adjustment unit in the other of the two regions. Semiconductor wafer temperature control device.

2. The mounting surface is formed in a circular shape in a plan view, The plurality of temperature detecting units are arranged apart from one another in both the circumferential direction and the radial direction of the mounting surface in a plan view.

2. The semiconductor wafer temperature control device according to claim 1.

3. The plurality of regions are: a central region that is provided at the center of the placement surface in a plan view and has a circular shape in a plan view; a plurality of outer regions that are circumferentially partitioned from one another radially outside the central region in a plan view and that are formed in an arc shape in a plan view; The plurality of temperature detection units are arranged apart from one another in the central region and the plurality of outer regions in a plan view.

3. The temperature control device for semiconductor wafers according to claim 2.

4. the mounting portion is formed in a plate shape having the mounting surface as a first surface, the temperature adjusting unit is provided on a second surface of the mounting unit opposite to the mounting surface, the mounting portion has a recess that opens in the second surface, the temperature adjusting unit has a through hole connected to the recess, The temperature detection unit is disposed in the recess through the through hole. The temperature control device for semiconductor wafers according to any one of claims 1 to 3.

5. The temperature adjusting unit is provided with a thermoelectric element. The temperature control device for semiconductor wafers according to any one of claims 1 to 4.

6. a temperature monitoring step of monitoring temperatures at a plurality of locations in at least one of a plurality of regions partitioned from each other in a plan view; a wafer placing step of placing a semiconductor wafer on the placing surface having the plurality of regions; a temperature selection step of selecting a temperature having a large temperature change per unit time from the temperatures of the plurality of monitored locations; and a temperature adjusting step of adjusting the temperature of the region based on the selected temperature, In the temperature monitoring step, the temperature is monitored at a plurality of points in each of the plurality of regions; In the temperature adjusting step, the temperature of one of two regions that are adjacent to each other in a plan view among the plurality of regions is adjusted based on the selected detected temperature, and the temperature of the other of the two regions is adjusted. A method for controlling the temperature of a semiconductor wafer.

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