Polishing liquid, polishing method, method for producing component, and method for producing semiconductor component

Abstract

To provide a polishing liquid capable of suppressing the occurrence of particle fallout marks during the polishing of a workpiece to be polished containing resin and particles containing silicon compounds, a polishing method using the polishing liquid, a method for producing a component using the polishing method, and a method for producing a semiconductor component using the polishing method.SOLUTION: There are provided: a polishing liquid for polishing a workpiece to be polished containing abrasive grains including cerium oxide, wherein the workpiece to be polished contains a resin and particles containing a silicon compound; a polishing method for polishing a workpiece to be polished containing a resin and particles containing a silicon compound using the polishing liquid; a method for producing a component using a workpiece polished by the polishing method; and a method for producing a semiconductor device using a workpiece polished by the polishing method.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a polishing liquid, a polishing method, a method for manufacturing a component, a method for manufacturing a semiconductor component, and the like. [Background technology]

[0002] In recent years, processing technologies for achieving higher density and miniaturization have become increasingly important in the manufacturing process of electronic devices. CMP (Chemical Mechanical Polishing), one of the processing technologies, is essential in the manufacturing process of electronic devices for forming shallow trench isolation (STI), planarizing pre-metal insulating materials or interlayer insulating materials, and forming plugs or buried metal wiring. Known polishing solutions used in CMP include those containing abrasive grains containing cerium oxide (see, for example, Patent Documents 1 and 2 listed below). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 10-106994 [Patent Document 2] Japanese Patent Application Publication No. 08-022970 Summary of the Invention [Problem to be solved by the invention]

[0004] The present inventors have focused on using a polishing liquid to polish a workpiece containing a resin and particles containing a silicon compound, and have found that when polishing such a workpiece, the particles containing the silicon compound fall off, leaving marks on the polished surface, and the polished surface may not be flattened.

[0005] One aspect of the present disclosure aims to provide a polishing liquid that can suppress the occurrence of traces of particles falling off when polishing a polished member containing a resin and particles containing a silicon compound. Another aspect of the present disclosure aims to provide a polishing method using the polishing liquid. Another aspect of the present disclosure aims to provide a method for manufacturing a component using the polishing method. Another aspect of the present disclosure aims to provide a method for manufacturing a semiconductor component using the polishing method. [Means for solving the problem]

[0006] In some aspects, the present disclosure relates to the following [1] to

[20] , etc. [1] A polishing liquid for polishing a member to be polished, the polishing liquid containing abrasive grains containing cerium oxide, the member to be polished containing a resin and particles containing a silicon compound. [2] The polishing liquid according to [1], wherein the particles contain silicon oxide. [3] The polishing liquid according to [1] or [2], further comprising an ether compound having a hydroxy group. [4] The polishing liquid according to [3], wherein the ether compound contains an alkoxy alcohol. [5] The polishing liquid according to [4], wherein the ether compound contains an alkoxy alcohol having a molecular weight of less than 200. [6] The polishing liquid according to [4] or [5], wherein the alkoxy alcohol contains a compound having an alkoxy group having 1 to 5 carbon atoms. [7] The polishing liquid according to any one of [4] to [6], wherein the alkoxy alcohol includes 1-propoxy-2-propanol. [8] The polishing liquid according to any one of [4] to [7], wherein the alkoxy alcohol contains 3-methoxy-3-methyl-1-butanol. [9] The polishing liquid according to any one of [4] to [8], wherein the content of the alkoxy alcohol is more than 0 mass % and not more than 5 mass % (or 0.2 to 0.8 mass %) based on the total mass of the polishing liquid.

[10] The polishing liquid according to any one of [3] to [9], wherein the ether compound contains a polyether.

[11] The polishing liquid according to

[10] , wherein the polyether contains polyglycerin.

[12] The polishing liquid according to

[10] or

[11] , wherein the content of the polyether is more than 0 mass % and 10 mass % or less (or 0.5 to 3 mass %) based on the total mass of the polishing liquid.

[13] The polishing liquid according to any one of [1] to

[12] , wherein the content of the abrasive grains is 0.01 to 10 mass % (or 0.5 to 2 mass %) based on the total mass of the polishing liquid.

[14] The polishing liquid according to any one of [1] to

[13] , further comprising an organic acid component.

[15] The polishing liquid according to any one of [1] to

[14] , further comprising at least one selected from the group consisting of ammonium cations and ammonia.

[16] The polishing liquid according to any one of [1] to

[15] , which has a pH of 3.00 to 13.00 (or 9.00 to 11.00).

[17] A polishing method, comprising polishing a member to be polished containing a resin and particles containing a silicon compound, using the polishing liquid according to any one of [1] to

[16] .

[18] The polishing method according to

[17] , wherein the resin comprises an epoxy resin.

[19] A method for manufacturing a part, comprising obtaining a part using a polished member polished by the polishing method according to

[17] or

[18] .

[20] A method for manufacturing a semiconductor component, comprising obtaining a semiconductor component using a polished member polished by the polishing method according to

[17] or

[18] . [Effects of the Invention]

[0007] According to one aspect of the present disclosure, it is possible to provide a polishing liquid that can suppress the occurrence of traces of particles falling off when polishing a polished member containing a resin and particles containing a silicon compound. According to another aspect of the present disclosure, it is possible to provide a polishing method using the polishing liquid. According to another aspect of the present disclosure, it is possible to provide a method for manufacturing a component using the polishing method. According to another aspect of the present disclosure, it is possible to provide a method for manufacturing a semiconductor component using the polishing method. According to another aspect of the present disclosure, it is possible to provide application of a polishing liquid to polishing a polished member containing a resin and particles containing a silicon compound. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view schematically illustrating an example of a member to be polished. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described, but the present disclosure is not limited to the following embodiments.

[0010] In this specification, numerical ranges indicated with "to" indicate a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. A numerical range "A or greater" means a range exceeding A and A. A numerical range "A or less" means a range less than A and A. In numerical ranges described in stages in this specification, the upper or lower limit of a certain numerical range can be arbitrarily combined with the upper or lower limit of another numerical range. In numerical ranges described in this specification, the upper or lower limit of the numerical range may be replaced with a value shown in the examples. "A or B" may include either A or B, or both. Unless otherwise specified, the materials exemplified in this specification can be used alone or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition refers to the total amount of the multiple substances present in the composition, unless otherwise specified. The term "film" encompasses structures that are formed over the entire surface as well as structures that are formed only partially when observed in a plan view. The term "process" does not only refer to an independent process, but also includes processes that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. "Alkyl groups" may be linear, branched, or cyclic unless otherwise specified. "Abrasive grains" refers to a collection of multiple particles, but for convenience, each particle that makes up an abrasive grain may be referred to as an abrasive grain.

[0011] <Polishing liquid> The polishing liquid according to this embodiment is a polishing liquid for polishing a member to be polished, and the member to be polished contains a resin and particles containing a silicon compound. The polishing liquid according to this embodiment contains abrasive grains containing cerium oxide. The polishing liquid according to this embodiment can be used as a CMP polishing liquid.

[0012] The polishing liquid according to this embodiment can suppress the occurrence of detachment marks caused by particles detaching from the polished surface when polishing a workpiece containing a resin and particles containing a silicon compound (a compound containing silicon). The polishing liquid according to this embodiment can suppress the occurrence of detachment marks with a minor axis of, for example, 1.0 μm or more, as evaluated in the Examples described below. The factors that suppress the occurrence of detachment marks are not necessarily clear, but the present inventors speculate that they are as follows. Specifically, abrasive grains containing cerium oxide not only polish the polished workpiece by physical action, but also chemically polish the polished workpiece by forming chemical bonds with the silicon compound, thereby polishing the polished workpiece while suppressing the occurrence of detachment marks. However, the factors that produce this effect are not limited to these. The minor axis of the detachment marks may be 0.2 μm or more, 0.6 μm or more, or 1.0 μm or more.

[0013] In recent years, the development of 2.1D integrated circuits, 2.5D integrated circuits, 3D integrated circuits, and the like has been progressing in order to increase the speed, power consumption, and capacity of electronic devices. Interest has been growing in connection processes such as chip-to-chip, wafer-to-wafer, and chip-to-wafer, as well as semiconductor package manufacturing processes using wafer-level packaging (WLP) and panel-level packaging (PLP). In these processes, the polished surface of the workpiece, which must be planarized to obtain a good connection surface (here, the term "connection surface" refers not only to the surface that is directly connected but also to the underlying surface when connected via another member), may contain resin (e.g., epoxy resin) and particles containing a silicon compound (e.g., silicon oxide). For example, the polished member may have a base containing resin and particles containing a silicon compound. According to one aspect of the polishing liquid of this embodiment, polishing of these workpieces can be performed effectively.

[0014] Examples of resins include epoxy resins, phenolic resins, acrylic resins, methacrylic resins, novolac resins, polyesters (unsaturated polyesters and polyesters other than unsaturated polyesters), polyimides, polyamideimides, polyhydroxystyrenes, polybenzoxazoles (PBOs), polybenzoxazole precursors, polyallyl ethers, and heterocycle-containing resins (excluding the resins exemplified above). Examples of "heterocycle-containing resins" include pyrrole ring-containing resins, pyridine ring-containing resins, and imidazole ring-containing resins. The polished member may contain at least one of these as a main component. The polished member may contain at least one selected from the group consisting of epoxy resins, polyimides, polybenzoxazoles, and polybenzoxazole precursors.

[0015] Examples of particulate silicon compounds include silicon oxides (e.g., SiO2), SiOC, and silicon nitrides (e.g., SiN). The particles containing a silicon compound may contain silicon oxide. In a cross section of a polished member containing a resin and particles containing a silicon compound, the minor axis of the particles or the proportion of the area occupied by the particles (based on the entire cross section) may be within the following ranges. The minor axis of the particles may be 0.01 μm or more, 0.2 μm or more, 0.6 μm or more, or 1.0 μm or more. The minor axis of the particles may be 100 μm or less, 50 μm or less, 25 μm or less, or 15 μm or less. From these perspectives, the minor axis of the particles may be 0.01 to 100 μm. The proportion of the area may be 1% or more, 15% or more, 30% or more, 45% or more, or 60% or more. The area ratio may be 99% or less, 90% or less, 80% or less, or 70% or less. From these viewpoints, the area ratio may be 1 to 99%.

[0016] According to one aspect of the polishing liquid of this embodiment, the polishing rate of metal materials can also be improved. Examples of metals in the metal materials include copper, cobalt, tantalum, aluminum, titanium, tungsten, and manganese. Examples of metal materials include wiring materials and barrier metal materials. Examples of metal materials include copper-based metals (metallic copper (single metal), copper compounds, etc.), cobalt-based metals (metallic cobalt (single metal)), tantalum-based metals (metallic tantalum (single metal)), tantalum nitride, etc.), aluminum-based metals (metallic aluminum (single metal)), titanium-based metals (metallic titanium (single metal)), titanium nitride, etc.), tungsten-based metals (metallic tungsten (single metal)), and manganese-based metals (metallic manganese (single metal)). According to one aspect of the polishing liquid of this embodiment, a copper polishing rate of, for example, 0.05 μm / min or more (preferably 0.35 μm / min or more) can be obtained in the evaluation described in the Examples below.

[0017] The polished surface of the above-mentioned polished member may contain a metal material (e.g., a copper-based metal) in addition to resin and silicon compound-containing particles. For example, the polished member may include a substrate containing resin and silicon compound-containing particles, and a metal portion containing a metal material and disposed in an opening formed in the substrate (an opening extending in the thickness direction of the polished member (thickness direction of the substrate)). Alternatively, the polished member may include a metal portion containing a metal material and extending in the thickness direction of the polished member (thickness direction of the substrate), and a substrate portion (containing resin and silicon compound-containing particles) covering at least a portion (partial or all) of the periphery of the metal portion. The polished member may include at least one (e.g., multiple) metal portions. The polished member may be obtained by supplying the constituent material of the metal portion to an opening formed in the substrate, or by supplying the constituent material of the substrate so as to cover at least a portion of the periphery of the metal portion. According to one aspect of the polishing liquid of this embodiment, polishing of these polished members can be performed effectively. The cross section of the metal portion perpendicular to the thickness direction of the polished member may be circular, the diameter of the metal portion may be 1 to 200 μm, and the interval between adjacent metal portions may be 1 to 200 μm.

[0018] Fig. 1 is a cross-sectional view showing a schematic example of a polished member, showing a cross section parallel to the surface to be polished. The polished member 10 shown in Fig. 1 comprises a substrate 12 and a metal portion 14 disposed in an opening formed in the substrate 12. The substrate 12 contains a resin 12a and particles 12b containing a silicon compound. However, the size and number of each component (particles 12b, metal portion 14, etc.), the dimensional ratio between components, etc. are not limited to those shown in the figure.

[0019] The polishing liquid according to this embodiment contains abrasive grains containing cerium oxide. The abrasive grains may contain one or more types of particles. Constituent materials of the abrasive grains other than cerium oxide include inorganic materials such as silica (SiO2), alumina, zirconia, titania, germania, and silicon carbide. The polishing liquid according to this embodiment does not need to contain alumina as a constituent material of the abrasive grains. The alumina content may be 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0020] The cerium oxide content in the abrasive grains may be 90% by mass or more, 93% by mass or more, 95% by mass or more, more than 95% by mass, 98% by mass or more, 99% by mass or more, 99.5% by mass or more, or 99.9% by mass or more based on the entire abrasive grains (all abrasive grains contained in the polishing liquid or all of the particles constituting the abrasive grains), from the viewpoint of easily suppressing the occurrence of traces due to the detachment of silicon compound-containing particles and easily improving the polishing rate for metal materials. The abrasive grains may be in an embodiment substantially consisting of cerium oxide (an embodiment in which substantially 100% by mass of the abrasive grains is cerium oxide).

[0021] The average particle size D50 or D80 of the abrasive grains may be in the following ranges. The average particle sizes D50 and D80 of the abrasive grains refer to the 50% and 80% particle sizes of the cumulative volume distribution, and can be measured, for example, using a laser diffraction particle size distribution analyzer. The average particle size of the abrasive grains can be adjusted by natural settling, pulverization, dispersion, filtration, etc. For example, the particle size may be adjusted after mixing the components of the polishing liquid.

[0022] The average particle size D50 of the abrasive grains may be 10 nm or more, 50 nm or more, 70 nm or more, 100 nm or more, 150 nm or more, more than 150 nm, 200 nm or more, 250 nm or more, 300 nm or more, 320 nm or more, or 340 nm or more, from the viewpoint of easily suppressing the occurrence of scars due to the detachment of particles containing a silicon compound and easily improving the polishing rate of metal materials. The average particle size D50 of the abrasive grains may be 1000 nm or less, 800 nm or less, 600 nm or less, 500 nm or less, 450 nm or less, 400 nm or less, or 350 nm or less, from the viewpoint of easily suppressing polishing scratches. From these viewpoints, the average particle size D50 of the abrasive grains may be 10 to 1000 nm, 50 to 800 nm, 100 to 500 nm, or 200 to 400 nm.

[0023] The average particle size D80 of the abrasive grains may be 50 nm or more, 100 nm or more, 200 nm or more, 300 nm or more, 350 nm or more, 400 nm or more, 450 nm or more, 500 nm or more, 550 nm or more, or 600 nm or more, from the viewpoint of easily suppressing the occurrence of scars due to the detachment of particles containing a silicon compound and easily improving the polishing rate of metal materials. The average particle size D80 of the abrasive grains may be 1200 nm or less, 1100 nm or less, 1000 nm or less, 900 nm or less, 800 nm or less, 750 nm or less, 700 nm or less, or 650 nm or less, from the viewpoint of easily suppressing polishing scratches. From these viewpoints, the average particle size D80 of the abrasive grains may be 50 to 1200 nm, 100 to 1000 nm, 300 to 800 nm, or 500 to 700 nm.

[0024] The content of the abrasive grains may be in the following ranges based on the total mass of the polishing liquid. From the viewpoint of easily suppressing the occurrence of traces due to the detachment of particles containing a silicon compound and easily improving the polishing rate of metal materials, the content of the abrasive grains may be 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, more than 0.5% by mass, 0.7% by mass or more, 0.8% by mass or more, 0.9% by mass or more, 1% by mass or more, 1.5% by mass or more, or 2% by mass or more. From the viewpoint of easily avoiding an increase in the viscosity of the polishing liquid, aggregation of the abrasive grains, etc., the content of the abrasive grains may be 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, or 1% by mass or less. From these viewpoints, the content of the abrasive grains may be 0.01 to 10 mass %, 0.1 to 5 mass %, 0.5 to 2 mass %, or 0.5 to 1.5 mass %.

[0025] (water) The polishing liquid according to this embodiment may contain water. Water may be contained as the remainder of the polishing liquid after removing other components. The water content may be within the following ranges based on the total mass of the polishing liquid. The water content may be 90% by mass or more, 91% by mass or more, 92% by mass or more, 93% by mass or more, 94% by mass or more, 94.5% by mass or more, 95% by mass or more, 95.5% by mass or more, 96% by mass or more, 97% by mass or more, or 98% by mass or more. The water content may be less than 100% by mass, 99% by mass or less, 98% by mass or less, 97% by mass or less, 96% by mass or less, or 95.5% by mass or less. From these viewpoints, the water content may be 90% by mass or more but less than 100% by mass, 90 to 99% by mass, or 95 to 99% by mass.

[0026] (additives) The polishing liquid according to this embodiment may contain components other than abrasive grains and water. Examples of such components include an ether compound having a hydroxy group (hereinafter sometimes referred to as "ether compound A"), an ether compound not having a hydroxy group, an acid component, ammonia, an anticorrosive, a basic hydroxide, a peroxide, an organic solvent, a surfactant, and an antifoaming agent. The polishing liquid according to this embodiment may not contain at least one of these components.

[0027] The polishing liquid according to this embodiment may contain an ether compound having a hydroxy group (ether compound A) from the viewpoint of easily suppressing the occurrence of traces due to the shedding of silicon compound-containing particles and easily improving the polishing rate for metal materials. The ether compound having a hydroxy group is a compound having at least one hydroxy group and at least one ether group. The "ether group" in ether compound A does not include the "-O-" structure in a hydroxy group (hydroxyl group), a carboxy group, a carboxylate salt group, an ester group, a sulfo group, and a phosphate group. The hydroxy group does not include the OH group contained in a carboxy group, a sulfo group, or a phosphate group.

[0028] From the viewpoint of easily suppressing the occurrence of scars due to the removal of silicon compound-containing particles and easily improving the polishing rate for metal materials, the ether compound A may contain a compound having a number of hydroxy groups in the following ranges. The number of hydroxy groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, 9 or more, 10 or more, 11 or more, or 12 or more. The number of hydroxy groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these viewpoints, the number of hydroxy groups may be 1 to 20, 1 to 10, 1 to 5, 1 to 3, or 1 to 2. From the viewpoint of easily suppressing the occurrence of scars due to the removal of silicon compound-containing particles and easily improving the polishing rate for metal materials, the ether compound A may contain a compound having one hydroxy group, a compound having two or more hydroxy groups, or a compound having one hydroxy group and a compound having two or more hydroxy groups.

[0029] From the viewpoint of easily suppressing the occurrence of scars due to the removal of silicon compound-containing particles and easily improving the polishing rate for metal materials, the ether compound A may contain a compound having the number of ether groups in the following ranges. The number of ether groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, or 9 or more. The number of ether groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these viewpoints, the number of ether groups may be 1 to 20, 1 to 10, 1 to 5, 1 to 3, or 1 to 2. From the viewpoint of easily suppressing the occurrence of scars due to the removal of silicon compound-containing particles and easily improving the polishing rate for metal materials, the ether compound A may contain a compound having one ether group, a compound having two or more ether groups, or a compound having one ether group and a compound having two or more ether groups.

[0030] The ether compound A may contain an alkoxy alcohol, which can easily suppress the occurrence of traces due to the detachment of silicon compound-containing particles and can easily improve the polishing rate of metal materials. Examples of the alkoxy alcohol include 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, 2-propoxyethanol, 2-butoxyethanol, 3-methoxy-3-methyl-1-butanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-isopentyloxyethanol, 1-propoxy-2-propanol, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, 1-methoxy-2-butanol, and glycol monoethers. The alkoxy alcohol may contain a compound having an alkoxy group having 1 to 5, 1 to 4, 1 to 3, 1 to 2, or 2 to 3 carbon atoms, from the viewpoint of easily suppressing the occurrence of scars due to the shedding of particles containing a silicon compound and easily improving the polishing rate for metal materials. The alkoxy alcohol may contain 1-propoxy-2-propanol or 3-methoxy-3-methyl-1-butanol, from the viewpoint of easily suppressing the occurrence of scars due to the shedding of particles containing a silicon compound and easily improving the polishing rate for metal materials.

[0031] The ether compound A may contain a polyether, or an alkoxy alcohol and a polyether, from the viewpoint of easily suppressing the occurrence of traces due to the removal of silicon compound-containing particles and easily improving the polishing rate of metal materials. Examples of polyethers include polyglycerin, polysaccharides, polyalkylene glycols, polyoxypropylene polyglyceryl ethers, polyoxyethylene polyglyceryl ethers, 1,4-di(2-hydroxyethoxy)benzene, 2,2-bis(4-polyoxyethyleneoxyphenyl)propane, 2,2-bis(4-polyoxypropyleneoxyphenyl)propane, ethylene glycol monophenyl ether, diethylene glycol monophenyl ether, polyoxyalkylene monophenyl ethers, propylene glycol monophenyl ether, polyoxypropylene monomethylphenyl ether, polyethylene glycol monomethyl ether, pentaerythritol polyoxyethylene ether, ethylene glycol monoallyl ether, polyoxyethylene monoallyl ether, and alkyl glucosides. The polyether may be a compound other than an alkoxy alcohol. The polyether may contain polyglycerin, from the viewpoint of easily suppressing the occurrence of traces due to the detachment of particles containing a silicon compound and easily improving the polishing rate for metal materials.

[0032] From the viewpoint of easily suppressing the occurrence of scars due to the shedding of silicon compound-containing particles and easily improving the polishing rate for metal materials, the ether compound A may contain polyglycerin having an average degree of polymerization of glycerin in the following ranges: The average degree of polymerization may be 3 or more, 4 or more, 5 or more, 8 or more, or 10 or more. The average degree of polymerization may be 100 or less, 50 or less, 30 or less, 20 or less, 15 or less, 12 or less, or 10 or less. From these viewpoints, the average degree of polymerization may be 3 to 100, 5 to 50, 8 to 20, 5 to 15, or 8 to 15.

[0033] From the viewpoint of easily suppressing the occurrence of scars due to the shedding of silicon compound-containing particles and easily improving the polishing rate for metal materials, the ether compound A may contain polyglycerol having a hydroxyl value within the following ranges. The hydroxyl value may be 100 or more, 200 or more, 300 or more, 400 or more, 500 or more, 600 or more, 700 or more, 800 or more, 850 or more, or 870 or more. The hydroxyl value may be 2000 or less, 1500 or less, 1200 or less, 1100 or less, 1000 or less, 950 or less, 930 or less, or 910 or less. From these viewpoints, the hydroxyl value may be 100 to 2000, 300 to 1500, 500 to 1200, or 800 to 1000.

[0034] From the viewpoint of easily suppressing the occurrence of scars due to shedding of particles containing a silicon compound and easily improving the polishing rate for metal materials, the ether compound A may include a compound having one hydroxy group and one ether group. From the viewpoint of easily suppressing the occurrence of scars due to shedding of particles containing a silicon compound and easily improving the polishing rate for metal materials, the ether compound A may include a compound having an ether group bonding an alkyl group having a hydroxy group as a substituent and an unsubstituted alkyl group, and the compound may be a compound having one hydroxy group and one ether group.

[0035] From the viewpoint of easily suppressing the occurrence of scars due to the shedding of silicon compound-containing particles and easily improving the removal rate of metal materials, the ether compound A may contain a compound having the following molecular weight: The molecular weight may be 50 or more, 80 or more, 100 or more, 110 or more, 115 or more, 118 or more, 120 or more, 150 or more, 190 or more, 200 or more, more than 200, 300 or more, 500 or more, 700 or more, or 750 or more. The molecular weight may be 3000 or less, 2000 or less, 1500 or less, 1200 or less, 1000 or less, 800 or less, 750 or less, 700 or less, 500 or less, 300 or less, 200 or less, less than 200, 190 or less, 150 or less, or 120 or less. From these viewpoints, the molecular weight may be 50 to 3000, 80 to 1000, 100 to 500, 100 to 200, or 100 or more and less than 200. The ether compound A may contain an alkoxy alcohol having a molecular weight of less than 200, for example.

[0036] When the ether compound A is a polymer, the weight-average molecular weight (Mw) may be used as the molecular weight. The weight-average molecular weight can be measured, for example, by gel permeation chromatography (GPC) under the following conditions. [conditions] Sample: 20 μL Standard polyethylene glycol: Polymer Laboratories, standard polyethylene glycol (molecular weight: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600, and 23000) Detector: RI-monitor manufactured by Showa Denko K.K., product name "Syodex-RI SE-61" Pump: Hitachi, Ltd., product name "L-6000" Column: Showa Denko K.K. product names "GS-220HQ" and "GS-620HQ" connected in this order Eluent: 0.4 mol / L sodium chloride aqueous solution Measurement temperature: 30℃ Flow rate: 1.00mL / min Measurement time: 45 min

[0037] The content of the alkoxy alcohol may be in the following range based on the total mass of the ether compounds (total mass of the ether compounds contained in the polishing liquid) or the total mass of the ether compounds A (total mass of the ether compounds A contained in the polishing liquid), from the viewpoint of easily suppressing the occurrence of traces of particles containing a silicon compound falling off and easily improving the polishing rate of metal materials. The content of the alkoxy alcohol may be more than 0% by mass, 5% by mass or more, 8% by mass or more, 10% by mass or more, 12% by mass or more, 15% by mass or more, 18% by mass or more, 20% by mass or more, 23% by mass or more, 24% by mass or more, 25% by mass or more, 30% by mass or more, 35% by mass or more, 40% by mass or more, 45% by mass or more, 50% by mass or more, more than 50% by mass, 55% by mass or more, 60% by mass or more, 65% by mass or more, 70% by mass or more, 75% by mass or more, 80% by mass or more, 85% by mass or more, 90% by mass or more, 95% by mass or more, 99% by mass or more, or substantially 100% by mass (an embodiment in which the ether compound or ether compound A contained in the polishing liquid is substantially composed of the alkoxy alcohol). The content of the alkoxy alcohol may be 100% by mass or less, less than 100% by mass, 95% by mass or less, 90% by mass or less, 85% by mass or less, 80% by mass or less, 75% by mass or less, 70% by mass or less, 65% by mass or less, 60% by mass or less, 55% by mass or less, 50% by mass or less, less than 50% by mass, 45% by mass or less, 40% by mass or less, 35% by mass or less, 30% by mass or less, 25% by mass or less, or 24% by mass or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0% by mass and 100% by mass or less, 5 to 100% by mass, 5 to 95% by mass, 5 to 50% by mass, 5 to 40% by mass, 20 to 100% by mass, 20 to 95% by mass, 20 to 50% by mass, or 20 to 40% by mass.

[0038] As the content of polyether or polyglycerin, the content A may be in the following ranges based on the total mass of the ether compounds (total mass of the ether compounds contained in the polishing liquid) or the total mass of the ether compounds A (total mass of the ether compounds A contained in the polishing liquid), from the viewpoint of easily suppressing the occurrence of scars due to the shedding of particles containing a silicon compound and easily improving the polishing rate for metal materials. The content A may be more than 0% by mass, 5% by mass or more, 10% by mass or more, 15% by mass or more, 20% by mass or more, 25% by mass or more, 30% by mass or more, 35% by mass or more, 40% by mass or more, 45% by mass or more, 50% by mass or more, more than 50% by mass, 55% by mass or more, 60% by mass or more, 65% by mass or more, 70% by mass or more, 75% by mass or more, or 76% by mass or more. The content A may be 100% by mass or less, less than 100% by mass, 95% by mass or less, 92% by mass or less, 90% by mass or less, 88% by mass or less, 85% by mass or less, 82% by mass or less, 80% by mass or less, 77% by mass or less, 76% by mass or less, 75% by mass or less, 70% by mass or less, or 65% by mass or less. From these viewpoints, the content A may be more than 0% by mass and 100% by mass or less, more than 0% by mass and 95% by mass or less, 5 to 95% by mass, 50 to 95% by mass, 60 to 95% by mass, more than 0% by mass and 80% by mass or less, 5 to 80% by mass, 50 to 80% by mass, or 60 to 80% by mass.

[0039] The content of ether compound A may be in the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily suppressing the occurrence of scars caused by the detachment of silicon compound-containing particles and easily improving the polishing rate for metal materials: The content of ether compound A may be more than 0% by mass, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 0.8% by mass or more, 1% by mass or more, 1.1% by mass or more, 1.2% by mass or more, 1.3% by mass or more, 1.4% by mass or more, 1.5% by mass or more, or 1.6% by mass or more. The content of ether compound A may be 10% by mass or less, 8% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass or less, 1% by mass or less, less than 1%, 0.8% by mass or less, 0.5% by mass or less, 0.3% by mass or less, or 0.1% by mass or less. From these viewpoints, the content of ether compound A may be more than 0% by mass and 10% by mass or less, 0.1 to 10% by mass, 0.5 to 10% by mass, 1 to 10% by mass, more than 0% by mass and 5% by mass or less, 0.1 to 5% by mass, 0.5 to 5% by mass, 1 to 5% by mass, more than 0% by mass and 3% by mass or less, 0.1 to 3% by mass, 0.5 to 3% by mass, or 1 to 3% by mass.

[0040] The content of the alkoxy alcohol may be in the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily suppressing the occurrence of scars caused by the detachment of silicon compound-containing particles and easily improving the polishing rate for metal materials: The content of the alkoxy alcohol may be more than 0% by mass, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass or more, 0.3% by mass or more, 0.31% by mass or more, 0.33% by mass or more, 0.35% by mass or more, 0.4% by mass or more, 0.45% by mass or more, 0.5% by mass or more, 0.55% by mass or more, 0.6% by mass or more, 0.65% by mass or more, 0.7% by mass or more, 0.8% by mass or more, or 1% by mass or more. The content of alkoxy alcohol is 5% by mass or less, 3% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.7% by mass or less, 0.65% by mass or less, 0.6% by mass or less, 0.55% by mass or less, 0.5% by mass or less, 0.45% by mass % or less, 0.4 mass% or less, 0.35 mass% or less, 0.33 mass% or less, 0.31 mass% or less, 0.3 mass% or less, 0.25 mass% or less, 0.2 mass% or less, 0.15 mass% or less, or 0.1 mass% or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.1 to 5% by mass, 0.2 to 5% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.1 to 1% by mass, 0.2 to 1% by mass, more than 0% by mass and not more than 0.8% by mass, 0.01 to 0.8% by mass, 0.1 to 0.8% by mass, 0.2 to 0.8% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, 0.1 to 0.5% by mass, or 0.2 to 0.5% by mass.

[0041] The content B of the polyether or polyglycerin may be in the following range based on the total mass of the polishing liquid, from the viewpoint of easily suppressing the occurrence of scars due to the shedding of silicon compound-containing particles and easily improving the polishing rate for metal materials. The content B may be more than 0% by mass, 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 0.6% by mass or more, 0.8% by mass or more, 0.9% by mass or more, or 1% by mass or more. The content B may be 10% by mass or less, 8% by mass or less, 7% by mass or less, 6% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, or 1% by mass or less. From these viewpoints, the content B may be more than 0 mass % and not more than 10 mass %, 0.01 to 10 mass %, 0.1 to 5 mass %, 0.5 to 3 mass %, or 0.5 to 2 mass %.

[0042] The content of ether compound A may be in the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily suppressing the occurrence of scars caused by the silicon compound-containing particles and easily improving the polishing rate for metal materials: The content of ether compound A may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, 80 parts by mass or more, 100 parts by mass or more, more than 100 parts by mass, 110 parts by mass or more, 120 parts by mass or more, 130 parts by mass or more, 140 parts by mass or more, 150 parts by mass or more, or 160 parts by mass or more. The content of ether compound A is 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 parts by mass or less, 14 It may be 0 parts by mass or less, 120 parts by mass or less, 110 parts by mass or less, 100 parts by mass or less, less than 100 parts by mass, 80 parts by mass or less, 50 parts by mass or less, 30 parts by mass or less, 10 parts by mass or less, 8 parts by mass or less, or 5 parts by mass or less. From these viewpoints, the content of ether compound A may be more than 0 parts by mass and not more than 1000 parts by mass, 10 to 1000 parts by mass, 50 to 1000 parts by mass, 100 to 1000 parts by mass, more than 0 parts by mass and not more than 500 parts by mass, 10 to 500 parts by mass, 50 to 500 parts by mass, 100 to 500 parts by mass, more than 0 parts by mass and not more than 300 parts by mass, 10 to 300 parts by mass, 50 to 300 parts by mass, or 100 to 300 parts by mass.

[0043] The content of the alkoxy alcohol may be in the following ranges per 100 parts by mass of the abrasive grains, from the viewpoint of easily suppressing the occurrence of traces due to the detachment of particles containing a silicon compound and easily improving the polishing rate for metal materials: The content of the alkoxy alcohol may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, 65 parts by mass or more, 70 parts by mass or more, 80 parts by mass or more, or 100 parts by mass or more. The content of alkoxy alcohol is 500 parts by mass or less, 300 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, 55 parts by mass or less, 50 parts by mass or less. The amount may be 45 parts by mass or less, 40 parts by mass or less, 35 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, 10 parts by mass or less, 8 parts by mass or less, or 5 parts by mass or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0 parts by mass and not more than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 20 to 500 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 100 parts by mass, 10 to 100 parts by mass, 20 to 100 parts by mass, more than 0 parts by mass and not more than 80 parts by mass, 1 to 80 parts by mass, 10 to 80 parts by mass, 20 to 80 parts by mass, more than 0 parts by mass and not more than 50 parts by mass, 1 to 50 parts by mass, 10 to 50 parts by mass, or 20 to 50 parts by mass.

[0044] The polyether content or polyglycerin content, C, may be within the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily suppressing the occurrence of scars due to the removal of silicon compound-containing particles and easily improving the polishing rate for metal materials. The content C may be more than 0 parts by mass, 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 80 parts by mass or more, 90 parts by mass or more, or 100 parts by mass or more. The content C may be 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, or 100 parts by mass or less. From these viewpoints, the content C may be more than 0 parts by mass and not more than 1000 parts by mass, 1 to 1000 parts by mass, 10 to 500 parts by mass, 50 to 300 parts by mass, or 50 to 200 parts by mass.

[0045] The content of the alkoxy alcohol may be in the following ranges relative to 100 parts by mass of polyether or 100 parts by mass of polyglycerin, from the viewpoint of easily suppressing the occurrence of scars caused by the shedding of silicon compound-containing particles and easily improving the polishing rate for metal materials: The content of the alkoxy alcohol may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 32 parts by mass or more, 33 parts by mass or more, 34 parts by mass or more, 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, or 65 parts by mass or more. The content of alkoxy alcohol is 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 120 parts by mass or less, 100 parts by mass or less It may be up to 80 parts by weight, up to 70 parts by weight, up to 65 parts by weight, up to 60 parts by weight, up to 55 parts by weight, up to 50 parts by weight, up to 45 parts by weight, up to 40 parts by weight, up to 35 parts by weight, up to 34 parts by weight, up to 33 parts by weight, or up to 32 parts by weight. From these viewpoints, the content of the alkoxy alcohol may be more than 0 parts by mass and not more than 1000 parts by mass, 1 to 1000 parts by mass, 10 to 1000 parts by mass, more than 0 parts by mass and not more than 200 parts by mass, 1 to 200 parts by mass, 10 to 200 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 100 parts by mass, 10 to 100 parts by mass, more than 0 parts by mass and not more than 50 parts by mass, 1 to 50 parts by mass, or 10 to 50 parts by mass.

[0046] The polishing liquid according to this embodiment may not contain xanthan gum as the ether compound A. The content of xanthan gum may be 0.5% by mass or less, less than 0.5% by mass, 0.1% by mass or less, 0.01% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0047] The polishing liquid according to this embodiment may contain an acid component. It is presumed that the polishing rate of the metal material is likely to be improved by the acid component forming a complex with the metal material or dissolving the metal material. The polishing liquid according to this embodiment may contain an organic acid component or an inorganic acid component as the acid component.

[0048] Examples of the organic acid component include organic acids (excluding amino acids), organic acid esters, organic acid salts, amino acids, amino acid esters, and amino acid salts. Examples of organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, 3-methylphthalic acid, 4-methylphthalic acid, 3-aminophthalic acid, 4-aminophthalic acid, 3-nitrophthalic acid, 4-nitrophthalic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, isophthalic acid, malic acid, tartaric acid, citric acid, p-toluenesulfonic acid, p-phenolsulfonic acid, methylsulfonic acid, lactic acid, itaconic acid, maleic acid, quinaldic acid, adipic acid, and pimelic acid. Examples of organic acid esters include esters of the above-mentioned organic acids. Examples of organic acid salts include ammonium salts (e.g., ammonium acetate), alkali metal salts, alkaline earth metal salts, and halides of the above-mentioned organic acids. Examples of amino acids include alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine. Examples of amino acid esters include esters of the above-mentioned amino acids. Examples of amino acid salts include alkali metal salts of the above-mentioned organic acids.

[0049] Examples of inorganic acid components include inorganic acids, ammonium salts of inorganic acids, and metal salts of inorganic acids (such as alkali metal salts and alkaline earth metal salts). Examples of inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, and chromic acid. Examples of ammonium salts of inorganic acids include ammonium salts of monovalent inorganic acids such as ammonium nitrate, ammonium chloride, and ammonium bromide; ammonium salts of divalent inorganic acids such as ammonium carbonate, ammonium hydrogencarbonate, ammonium sulfate, and ammonium persulfate; and ammonium salts of trivalent inorganic acids such as ammonium phosphate, ammonium hydrogenphosphate, ammonium dihydrogenphosphate, and ammonium borate.

[0050] The organic acid component may include at least one selected from the group consisting of an organic acid other than an amino acid and an amino acid, or may include at least one selected from the group consisting of malic acid and glycine, from the viewpoint of easily improving the removal rate of metal materials. The inorganic acid component may include at least one selected from the group consisting of ammonium chloride, ammonium carbonate, ammonium hydrogen carbonate, ammonium sulfate, ammonium persulfate, and ammonium dihydrogen phosphate, or may include at least one selected from the group consisting of ammonium carbonate, ammonium hydrogen carbonate, ammonium persulfate, and ammonium dihydrogen phosphate, or may include at least one selected from the group consisting of ammonium carbonate, ammonium persulfate, and ammonium dihydrogen phosphate, from the viewpoint of easily improving the removal rate of metal materials.

[0051] From the viewpoint of easily improving the removal rate of metal materials, the content of the acid component may be in the following ranges based on the total mass of the polishing liquid: The content of the acid component may be more than 0% by mass, 0.01% by mass or more, 0.02% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.2% by mass or more, 0.3% by mass or more, 0.4% by mass or more, 0.5% by mass or more, 0.6% by mass or more, 0.7% by mass or more, 0.8% by mass or more, 0.85% by mass or more, 0.9% by mass or more, 1% by mass or more, 1.1% by mass or more, 1.2% by mass or more, 1.3% by mass or more, 1.4% by mass or more, 1.5% by mass or more, 1.6% by mass or more, 1.7% by mass or more, 1.8% by mass or more, 1.9% by mass or more, or 2% by mass or more. The content of the acid component is 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, 2.5% by mass or less, 2% by mass or less, 1.9% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass % or less, 1 mass% or less, 0.9 mass% or less, 0.85 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, 0.1 mass% or less, 0.05 mass% or less, 0.02 mass% or less, or 0.01 mass% or less. From these viewpoints, the content of the acid component may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.05 to 5% by mass, more than 0% by mass and not more than 2% by mass, 0.01 to 2% by mass, 0.05 to 2% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.05 to 1% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, or 0.05 to 0.5% by mass.

[0052] From the viewpoint of easily improving the removal rate of metal materials, the content of the organic acid component may be in the following ranges based on the total mass of the polishing liquid: The content of the organic acid component may be more than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.15 mass% or more, 0.2 mass% or more, 0.25 mass% or more, 0.3 mass% or more, 0.35 mass% or more, 0.4 mass% or more, 0.41 mass% or more, 0.45 mass% or more, 0.5 mass% or more, 0.6 mass% or more, 0.8 mass% or more, or 1 mass% or more. The content of organic acid components is 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.45% by mass or less, 0.41% by mass or less, 0 It may be .4% by mass or less, 0.35% by mass or less, 0.3% by mass or less, 0.25% by mass or less, 0.2% by mass or less, 0.15% by mass or less, 0.1% by mass or less, 0.05% by mass or less, or 0.02% by mass or less. From these viewpoints, the content of the organic acid component may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.02 to 5% by mass, 0.1 to 5% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.02 to 1% by mass, 0.1 to 1% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, 0.02 to 0.5% by mass, or 0.1 to 0.5% by mass.

[0053] From the viewpoint of easily improving the removal rate of metal materials, the content of the inorganic acid component may be in the following ranges based on the total mass of the polishing liquid: The content of the inorganic acid component may be more than 0 mass%, 0.01 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.5 mass% or more, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 0.9 mass% or more, 1 mass% or more, 1.1 mass% or more, 1.2 mass% or more, 1.3 mass% or more, 1.4 mass% or more, 1.5 mass% or more, or 1.6 mass% or more. The content of the inorganic acid component is 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, 2.5% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1. It may be 2% by mass or less, 1.1% by mass or less, 1% by mass or less, 0.9% by mass or less, 0.8% by mass or less, 0.7% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.4% by mass or less, 0.3% by mass or less, 0.2% by mass or less, or 0.1% by mass or less. From these viewpoints, the content of the inorganic acid component may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.1 to 5% by mass, 0.5 to 5% by mass, more than 0% by mass and not more than 1% by mass, 0.01 to 1% by mass, 0.1 to 1% by mass, 0.5 to 1% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, or 0.1 to 0.5% by mass.

[0054] The polishing liquid according to this embodiment may contain an ammonium salt. It is presumed that the ammonium salt or the ammonium cation of the ammonium salt forms a complex with the metal material, which facilitates an improvement in the removal rate of the metal material. The ammonium salt may include an ammonium salt of an inorganic acid, or an ammonium salt of an organic acid, from the viewpoint of facilitating an improvement in the removal rate of the metal material.

[0055] The ammonium salt may include at least one selected from the group consisting of ammonium salts of monovalent inorganic acids, ammonium salts of divalent inorganic acids, and ammonium salts of trivalent inorganic acids, from the viewpoint of easily improving the polishing rate for metal materials. The ammonium salt may include at least one selected from the group consisting of ammonium chloride, ammonium carbonate, ammonium hydrogen carbonate, ammonium sulfate, ammonium persulfate, ammonium dihydrogen phosphate, and ammonium acetate, from the viewpoint of easily improving the polishing rate for metal materials. The ammonium salt may include an ammonium salt other than a peroxide, and may include a peroxide (ammonium persulfate, etc.), from the viewpoint of easily improving the polishing rate for metal materials.

[0056] The ammonium salt may contain a compound having the following molecular weight, from the viewpoint of easily improving the removal rate of metal materials. The molecular weight may be 50 or more, 60 or more, 70 or more, 75 or more, 78 or more, 80 or more, 90 or more, 100 or more, 110 or more, 120 or more, 130 or more, 140 or more, 150 or more, 180 or more, 200 or more, or 220 or more. The molecular weight may be 1000 or less, less than 1000, 800 or less, 500 or less, 300 or less, 250 or less, 230 or less, 220 or less, 200 or less, 180 or less, 150 or less, 140 or less, 130 or less, 120 or less, 110 or less, 100 or less, 90 or less, 80 or less, 78 or less, 75 or less, 70 or less, or 60 or less. From these viewpoints, the molecular weight may be 50-1000, 70-1000, 80-1000, 50-500, 70-500, 80-500, 50-250, 70-250, 80-250, 50-100, 70-100, or 80-100.

[0057] From the viewpoint of easily improving the polishing rate for metal materials, the content of the ammonium salt other than peroxide may be in the following ranges based on the total mass of the ammonium salt (total mass of ammonium salt contained in the polishing liquid): The content of the ammonium salt other than peroxide may be more than 0 mass%, 1 mass% or more, 5 mass% or more, 10 mass% or more, 20 mass% or more, 30 mass% or more, 34 mass% or more, 35 mass% or more, 40 mass% or more, 41 mass% or more, 45 mass% or more, 50 mass% or more, more than 50 mass%, 60 mass% or more, 70 mass% or more, 80 mass% or more, 90 mass% or more, 95 mass% or more, 99 mass% or more, or substantially 100 mass% (an embodiment in which the ammonium salt contained in the polishing liquid is substantially composed of an ammonium salt other than peroxide). The content of the ammonium salt other than peroxide may be 100% by mass or less, less than 100% by mass, 99% by mass or less, 95% by mass or less, 90% by mass or less, 80% by mass or less, 70% by mass or less, 60% by mass or less, 50% by mass or less, less than 50% by mass, 45% by mass or less, 41% by mass or less, 40% by mass or less, 35% by mass or less, 34% by mass or less, 30% by mass or less, 20% by mass or less, 10% by mass or less, or 5% by mass or less. From these viewpoints, the content of the ammonium salt other than peroxide may be more than 0% by mass and 100% by mass or less, 30 to 100% by mass, 50 to 100% by mass, or 80 to 100% by mass.

[0058] When the ammonium salt contains a peroxide, the content of the peroxide (ammonium salt) may be in the following ranges based on the total mass of the ammonium salt (total mass of the ammonium salt contained in the polishing liquid), from the viewpoint of easily improving the polishing rate of metal materials: The content of the peroxide (ammonium salt) may be more than 0 mass%, 1 mass% or more, 5 mass% or more, 10 mass% or more, 20 mass% or more, 30 mass% or more, 40 mass% or more, 50 mass% or more, more than 50 mass%, 55 mass% or more, 59 mass% or more, 60 mass% or more, 65 mass% or more, 66 mass% or more, 70 mass% or more, 80 mass% or more, 90 mass% or more, 95 mass% or more, 99 mass% or more, or substantially 100 mass% (an embodiment in which the ammonium salt contained in the polishing liquid is substantially composed of peroxide). The content of peroxide (ammonium salt) may be 100% by mass or less, less than 100% by mass, 99% by mass or less, 95% by mass or less, 90% by mass or less, 80% by mass or less, 70% by mass or less, 66% by mass or less, 65% by mass or less, 60% by mass or less, or 59% by mass or less. From these viewpoints, the content of peroxide (ammonium salt) may be more than 0% by mass and less than 100% by mass, 50 to 100% by mass, 60 to 100% by mass, more than 0% by mass and less than 100% by mass, 50% by mass or more and less than 100% by mass, or 60% by mass or more and less than 100% by mass.

[0059] The content D of the ammonium salt (the total amount of compounds corresponding to ammonium salts; the same applies hereinafter) or the content of the ammonium salt other than peroxide may be in the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily improving the removal rate of metal materials: The content D may be more than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.45 mass% or more, 0.5 mass% or more, more than 0.5 mass% or more, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 0.85 mass% or more, 0.9 mass% or more, 1 mass% or more, 1.1 mass% or more, 1.2 mass% or more, 1.3 mass% or more, 1.4 mass% or more, 1.5 mass% or more, or 1.6 mass% or more. Content D is 10% by mass or less, 8% by mass or less, 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.8% by mass or less, 1.7% by mass or less, 1.6% by mass or less, 1.5% by mass or less, 1.4% by mass or less, 1.3% by mass or less, 1.2% by mass or less, 1.1% by mass or less, 1% by mass or less, 0 It may be .9 mass% or less, 0.85 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.45 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, 0.1 mass% or less, 0.05 mass% or less, or 0.02 mass% or less. From these viewpoints, content D is more than 0 mass% and less than or equal to 10 mass%, more than 0 mass% and less than or equal to 5 mass%, more than 0 mass% and less than or equal to 2 mass%, more than 0 mass% and less than or equal to 1 mass%, 0.01 to 10 mass%, 0.01 to 5 mass%, and 0.01 to 2 mass%. , 0.01-1% by mass, 0.1-10% by mass, 0.1-5% by mass, 0.1-2% by mass, 0.1-1% by mass, 0.3-10% by mass, 0.3-5% by mass, 0.3-2% by mass, or 0.3-1% by mass.

[0060] When the ammonium salt contains a peroxide, the content of the peroxide (ammonium salt) may be in the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate for metal materials: The content of the peroxide (ammonium salt) may be more than 0 mass%, 0.01 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.5 mass% or more, more than 0.5 mass%, 0.6 mass% or more, 0.65 mass% or more, 0.7 mass% or more, 0.75 mass% or more, or 0.8 mass% or more. The content of peroxide (ammonium salt) may be 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, 1.2% by mass or less, 1% by mass or less, 0.9% by mass or less, 0.8% by mass or less, 0.75% by mass or less, 0.7% by mass or less, 0.65% by mass or less, or 0.6% by mass or less. From these viewpoints, the content of peroxide (ammonium salt) may be more than 0% by mass and 5% by mass or less, 0.01 to 5% by mass, 0.1 to 5% by mass, 0.5 to 5% by mass, more than 0% by mass and 1% by mass or less, 0.01 to 1% by mass, 0.1 to 1% by mass, or 0.5 to 1% by mass.

[0061] The content E of the ammonium salt or the ammonium salt other than peroxide may be within the following ranges per 100 parts by mass of the abrasive grains, from the viewpoint of readily improving the polishing rate for metal materials: The content E may be more than 0 parts by mass, 1 part by mass or more, 2 parts by mass or more, 5 parts by mass or more, 10 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 70 parts by mass or more, 80 parts by mass or more, 85 parts by mass or more, 90 parts by mass or more, 100 parts by mass or more, 110 parts by mass or more, 120 parts by mass or more, 130 parts by mass or more, 140 parts by mass or more, 150 parts by mass or more, or 160 parts by mass or more. Content E is 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 parts by mass or less, 140 parts by mass or less, 130 parts by mass or less, 120 parts by mass or less, 11 It may be 0 parts by mass or less, 100 parts by mass or less, 90 parts by mass or less, 85 parts by mass or less, 80 parts by mass or less, 70 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, 10 parts by mass or less, 5 parts by mass or less, or 2 parts by mass or less. From these viewpoints, the content E may be more than 0 parts by mass and not more than 1000 parts by mass, more than 0 parts by mass and not more than 500 parts by mass, more than 0 parts by mass and not more than 200 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 1000 parts by mass, 1 to 500 parts by mass, 1 to 200 parts by mass, 1 to 100 parts by mass, 10 to 1000 parts by mass, 10 to 500 parts by mass, 10 to 200 parts by mass, 10 to 100 parts by mass, 30 to 1000 parts by mass, 30 to 500 parts by mass, 30 to 200 parts by mass, or 30 to 100 parts by mass.

[0062] When the ammonium salt contains a peroxide, the content of the peroxide (ammonium salt) may be within the following ranges per 100 parts by weight of the abrasive grains, from the viewpoint of easily improving the polishing rate of metal materials. The content of the peroxide (ammonium salt) may be more than 0 parts by weight, 1 part by weight or more, 5 parts by weight or more, 10 parts by weight or more, 20 parts by weight or more, 30 parts by weight or more, 40 parts by weight or more, 50 parts by weight or more, 60 parts by weight or more, 65 parts by weight or more, 70 parts by weight or more, 75 parts by weight or more, or 80 parts by weight or more. The content of the peroxide (ammonium salt) may be 500 parts by weight or less, 400 parts by weight or less, 300 parts by weight or less, 200 parts by weight or less, 150 parts by weight or less, 120 parts by weight or less, 100 parts by weight or less, 90 parts by weight or less, 80 parts by weight or less, 75 parts by weight or less, 70 parts by weight or less, 65 parts by weight or less, or 60 parts by weight or less. From these viewpoints, the content of the peroxide (ammonium salt) may be more than 0 parts by mass and not more than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 50 to 500 parts by mass, more than 0 parts by mass and not more than 100 parts by mass, 1 to 100 parts by mass, 10 to 100 parts by mass, or 50 to 100 parts by mass.

[0063] The polishing liquid according to this embodiment may contain ammonia. It is presumed that the ammonia forms a complex with the metal material, which facilitates an improvement in the removal rate of the metal material. From the viewpoint of facilitating an improvement in the removal rate of the metal material, the polishing liquid according to this embodiment may contain at least one selected from the group consisting of ammonium cations and ammonia, and may contain at least one selected from the group consisting of ammonium salts (such as the ammonium salts of the inorganic acids described above and the ammonium salts of the organic acids described above) and ammonia.

[0064] From the viewpoint of easily improving the removal rate of metal materials, the ammonia content may be within the following ranges based on the total mass of the polishing liquid. The ammonia content may be more than 0% by mass, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.1% by mass or more, 0.12% by mass or more, 0.15% by mass or more, 0.2% by mass or more, 0.25% by mass or more, or 0.3% by mass or more. The ammonia content may be 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1.5% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.4% by mass or less, 0.3% by mass or less, 0.25% by mass or less, 0.2% by mass or less, 0.15% by mass or less, or 0.1% by mass or less. From these viewpoints, the ammonia content may be more than 0% by mass and not more than 5% by mass, 0.01 to 5% by mass, 0.1 to 5% by mass, 0.2 to 5% by mass, more than 0% by mass and not more than 2% by mass, 0.01 to 2% by mass, 0.1 to 2% by mass, 0.2 to 2% by mass, more than 0% by mass and not more than 0.5% by mass, 0.01 to 0.5% by mass, 0.1 to 0.5% by mass, or 0.2 to 0.5% by mass.

[0065] The ammonia content may be within the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of readily improving the polishing rate for metal materials. The ammonia content may be more than 0 parts by mass, 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 12 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, or 30 parts by mass or more. The ammonia content may be 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, less than 50 parts by mass, 40 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, 10 parts by mass or less, 8 parts by mass or less, or 5 parts by mass or less. From these viewpoints, the ammonia content may be more than 0 parts by mass and not more than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 20 to 500 parts by mass, more than 0 parts by mass and not more than 200 parts by mass, 1 to 200 parts by mass, 10 to 200 parts by mass, 20 to 200 parts by mass, more than 0 parts by mass and not more than 50 parts by mass, 1 to 50 parts by mass, 10 to 50 parts by mass, or 20 to 50 parts by mass.

[0066] From the viewpoint of easily improving the polishing rate for metal materials, the content of ammonia may be in the following ranges relative to 100 parts by mass of the ammonium salt: The content of ammonia may be more than 0 parts by mass, 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, 36 parts by mass or more, 40 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 80 parts by mass or more, 100 parts by mass or more, 150 parts by mass or more, 200 parts by mass or more, 300 parts by mass or more, 500 parts by mass or more, 1000 parts by mass or more, 1500 parts by mass or more, or 2000 parts by mass or more. The ammonia content may be 2000 parts by mass or less, 1500 parts by mass or less, 1000 parts by mass or less, 500 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 40 parts by mass or less, 36 parts by mass or less, 35 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, or 15 parts by mass or less. From these viewpoints, the ammonia content may be more than 0 parts by mass and 2000 parts by mass or less, 10 to 2000 parts by mass, 100 to 2000 parts by mass, 300 to 2000 parts by mass, more than 0 parts by mass and 1500 parts by mass or less, 10 to 1500 parts by mass, 100 to 1500 parts by mass, 300 to 1500 parts by mass, or 1 to 200 parts by mass.

[0067] The polishing liquid according to this embodiment may contain an anticorrosive agent (anticorrosive agent for metal materials) as a compound having an anticorrosive effect on metal materials. The anticorrosive agent forms a protective film on the metal material, thereby suppressing etching of the metal material and reducing roughness of the polished surface.

[0068] The corrosion inhibitor may include at least one selected from the group consisting of triazole compounds, pyridine compounds, pyrazole compounds, pyrimidine compounds, imidazole compounds, guanidine compounds, thiazole compounds, tetrazole compounds, triazine compounds, and hexamethylenetetramine. The term "compound" is a general term for compounds having the skeleton; for example, "triazole compound" refers to a compound having a triazole skeleton. From the viewpoint of easily achieving a suitable corrosion inhibitory effect, the corrosion inhibitor may include at least one selected from the group consisting of triazole compounds, pyridine compounds, imidazole compounds, tetrazole compounds, triazine compounds, and hexamethylenetetramine, may include a triazole compound, or may include a benzotriazole compound.

[0069] Examples of triazole compounds include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, benzotriazole, 1-hydroxybenzotriazole, 1-dihydroxypropylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxy-1H-benzotriazole, 4-carboxy-1H-benzotriazole methyl ester (methyl 1H-benzotriazole-4-carboxylate), 4-carboxy-1H-benzotriazole butyl ester (butyl 1H-benzotriazole-4-carboxylate), 4-carboxy-1H-benzotriazole octyl ester (octyl 1H-benzotriazole-4-carboxylate), 5-hexylbenzotriazole, [1,2,3-benzotriazole] Triazolyl-1-methyl][1,2,4-triazolyl-1-methyl][2-ethylhexyl]amine, tolyltriazole, naphthotriazole, bis[(1-benzotriazolyl)methyl]phosphonic acid, 3H-1,2,3-triazolo[4,5-b]pyridin-3-ol, 1H-1,2,3-triazolo[4,5-b]pyridine, 1-acetyl-1H-1,2,3-triazolo[4,5-b] Examples of suitable anticorrosive agents include pyridine, 1,2,4-triazolo[1,5-a]pyrimidine, 2-methyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, 2-methylsulfanyl-5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, and 2-methylsulfanyl-5,7-diphenyl-4,7-dihydro-[1,2,4]triazolo[1,5-a]pyrimidine. Compounds having a triazole skeleton and other skeletons in one molecule are classified as triazole compounds. The polishing liquid according to this embodiment may contain a triazole compound having a hydroxy group, or may contain 1-hydroxybenzotriazole, in order to easily obtain a suitable anticorrosion effect.

[0070] The content F of the anticorrosive agent, triazole compound, or benzotriazole compound may be in the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily obtaining a suitable anticorrosion effect: The content F may be more than 0 mass%, 0.001 mass% or more, 0.003 mass% or more, 0.005 mass% or more, 0.008 mass% or more, 0.01 mass% or more, 0.02 mass% or more, 0.025 mass% or more, 0.03 mass% or more, 0.04 mass% or more, 0.05 mass% or more, 0.08 mass% or more, 0.1 mass% or more, 0.3 mass% or more, 0.5 mass% or more, or 1 mass% or more. Content F may be 2% by mass or less, 1.5% by mass or less, 1% by mass or less, 0.5% by mass or less, 0.3% by mass or less, 0.1% by mass or less, 0.08% by mass or less, 0.05% by mass or less, 0.04% by mass or less, 0.03% by mass or less, 0.025% by mass or less, 0.02% by mass or less, 0.01% by mass or less, or 0.008% by mass or less. From these viewpoints, the content F may be more than 0% by mass and not more than 2% by mass, 0.001 to 2% by mass, 0.005 to 2% by mass, 0.01 to 2% by mass, more than 0% by mass and not more than 1% by mass, 0.001 to 1% by mass, 0.005 to 1% by mass, 0.01 to 1% by mass, more than 0% by mass and not more than 0.1% by mass, 0.001 to 0.1% by mass, 0.005 to 0.1% by mass, or 0.01 to 0.1% by mass.

[0071] The polishing liquid according to this embodiment may contain a basic hydroxide. The use of a basic hydroxide tends to improve the polishing rate of metal materials. Examples of basic hydroxides include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide; alkaline earth metal hydroxides; and tetramethylammonium hydroxide (TMAH).

[0072] From the viewpoint of easily improving the polishing rate for metal materials, the content of the basic hydroxide may be in the following range based on the total mass of the polishing liquid: The content of the basic hydroxide may be more than 0 mass%, 0.01 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.15 mass% or more, 0.2 mass% or more, 0.25 mass% or more, 0.3 mass% or more, 0.35 mass% or more, 0.36 mass% or more, 0.4 mass% or more, 0.45 mass% or more, or 0.48 mass% or more. The content of the basic hydroxide may be 5% by mass or less, 4% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.6% by mass or less, 0.5% by mass or less, 0.48% by mass or less, 0.45% by mass or less, 0.4% by mass or less, 0.36% by mass or less, 0.35% by mass or less, 0.3% by mass or less, or 0.25% by mass or less. From these viewpoints, the content of the basic hydroxide may be more than 0% by mass and 5% by mass or less, 0.01 to 5% by mass, 0.1 to 5% by mass, more than 0% by mass and 1% by mass or less, 0.01 to 1% by mass, or 0.1 to 1% by mass.

[0073] The polishing liquid according to this embodiment may contain a peroxide other than the above-mentioned ammonium salt, or may not contain such a peroxide. Examples of peroxides include potassium persulfate, hydrogen peroxide, ferric nitrate, ferrous sulfate, ozone, hypochlorous acid, hypochlorite, potassium periodate, and peracetic acid. The polishing liquid according to this embodiment may not contain hydrogen peroxide. The peroxide content or hydrogen peroxide content may be 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0074] The polishing liquid according to this embodiment may contain an organic solvent (an organic solvent not corresponding to ether compound A) from the viewpoint of easily improving the removal rate of metal materials. Examples of organic solvents include alcohols (monoalcohols and polyols), carbonate esters, lactones, etc. Examples of monoalcohols include methanol, ethanol, propanol (e.g., 2-propanol), butanol, pentanol, octanol, etc. Examples of polyols include diols such as methylene glycol, ethylene glycol, propylene glycol, butylene glycol (e.g., 1,3-butanediol), and hexylene glycol; and glycerin. Examples of carbonate esters include ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, and methyl ethyl carbonate. Examples of lactones include propiolactone and butyrolactone. From the viewpoint of easily improving the polishing rate of the metal material, the organic solvent may contain an alcohol, a monoalcohol, propanol, a polyol, or at least one selected from the group consisting of methylene glycol, ethylene glycol, propylene glycol, butylene glycol, and hexylene glycol.

[0075] The content of the organic solvent may be within the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily improving the polishing rate for metal materials. The content of the organic solvent may be greater than 0 mass%, 0.1 mass% or more, 0.3 mass% or more, 0.5 mass% or more, 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 1 mass% or more, 1.2 mass% or more, or 1.3 mass% or more. The content of the organic solvent may be 20 mass% or less, 15 mass% or less, 10 mass% or less, 8 mass% or less, 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, or 1.5 mass% or less. From these viewpoints, the content of the organic solvent may be greater than 0 mass% and 20 mass% or less, 0.1 to 20 mass%, 1 to 20 mass%, greater than 0 mass% and 5 mass% or less, 0.1 to 5 mass%, or 1 to 5 mass%.

[0076] The polishing liquid according to this embodiment may be free of dihydroxyethylglycine, aminopolycarboxylic acid, and nonmetallic salt of aminopolycarboxylic acid. The content (total amount) of dihydroxyethylglycine, aminopolycarboxylic acid, and nonmetallic salt of aminopolycarboxylic acid may be 0.05% by mass or less, less than 0.05% by mass, 0.01% by mass or less, 0.001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0077] The polishing liquid according to this embodiment may be free of a compound having an unsaturated carboxylic acid monomer unit, and may be free of a polycarboxylic acid polymer dispersant. The content of the compound having an unsaturated carboxylic acid monomer unit or the content of the polycarboxylic acid polymer dispersant may be 0.0005% by mass or less, less than 0.0005% by mass, 0.0001% by mass or less, 0.00001% by mass or less, or substantially 0% by mass, based on the total mass of the polishing liquid.

[0078] (pH) The pH of the polishing liquid according to this embodiment may be in the following ranges, from the viewpoint of easily suppressing the occurrence of traces due to the detachment of silicon compound-containing particles and easily improving the polishing rate for metal materials: The pH of the polishing liquid may be 3.00 or more, 4.00 or more, more than 4.00, 5.00 or more, more than 5.00, 6.00 or more, 7.00 or more, more than 7.00, 7.50 or more, 8.00 or more, more than 8.00, 8.50 or more, 9.00 or more, 9.30 or more, 9.40 or more, 9.50 or more, 9.60 or more, 9.80 or more, 10.00 or more, more than 10.00, 10.20 or more, 10.30 or more, 10.50 or more, or 10.80 or more. The pH of the polishing liquid may be 13.00 or less, 12.00 or less, 11.80 or less, 11.50 or less, 11.00 or less, 10.80 or less, 10.50 or less, 10.30 or less, 10.20 or less, 10.00 or less, 9.80 or less, 9.60 or less, 9.50 or less, 9.40 or less, 9.30 or less, 9.00 or less, 8.50 or less, or 8.00 or less. From these viewpoints, the pH of the polishing liquid may be 3.00 to 13.00, 7.00 to 13.00, 8.00 to 13.00, 9.00 to 13.00, 3.00 to 12.00, 7.00 to 12.00, 8.00 to 12.00, 9.00 to 12.00, 3.00 to 11.00, 7.00 to 11.00, 8.00 to 11.00, or 9.00 to 11.00. The pH of the polishing liquid can be adjusted by the above-mentioned acid component, ammonia, basic hydroxide, etc.

[0079] The pH of the polishing solution according to this embodiment can be measured with a pH meter (e.g., Model PHL-40 manufactured by DKK-TOA Corporation). For example, after two-point calibration of the pH meter using a phthalate pH buffer solution (pH: 4.01) and a neutral phosphate pH buffer solution (pH: 6.86) as standard buffer solutions, the pH meter electrode is placed in the polishing solution, and the pH value is measured after stabilization for at least two minutes. At this time, the liquid temperatures of both the standard buffer solution and the polishing solution are 25°C.

[0080] (Storage status) The polishing liquid according to this embodiment may be stored as a stock solution for a polishing liquid with a reduced amount of water compared to when it is used. The stock solution for a polishing liquid is a stock solution for obtaining a polishing liquid, and the polishing liquid can be obtained by diluting the stock solution for a polishing liquid with water before or at the time of use. The dilution ratio is, for example, 1.5 times or more.

[0081] The polishing liquid according to this embodiment may be stored as a single-component polishing liquid containing at least abrasive grains, or as a multiple-component polishing liquid containing a slurry (first liquid) and an additive liquid (second liquid). In multiple-component polishing liquids, the components of the polishing liquid are separated into a slurry and an additive liquid so that the slurry and the additive liquid are mixed to form the polishing liquid. The slurry contains, for example, at least abrasive grains and water. The additive liquid contains, for example, at least an additive and water. The components of the polishing liquid may be separated into three or more liquids and stored. In multiple-component polishing liquids, the slurry and the additive liquid may be mixed to prepare the polishing liquid immediately before or during polishing. The slurry and the additive liquid in the multiple-component polishing liquid may be supplied onto the polishing platen, respectively, and the slurry and the additive liquid may be mixed on the polishing platen to prepare the polishing liquid.

[0082] <Polishing method> The polishing method according to this embodiment includes a polishing step in which a member to be polished containing a resin and particles containing a silicon compound is polished using the polishing liquid according to this embodiment. In the polishing step, the surface of the member to be polished can be polished, and the surface to be polished containing the resin and particles containing a silicon compound can be polished. In the polishing step, at least a portion of the resin and particles containing a silicon compound in the member to be polished can be polished and removed. The polishing liquid used in the polishing step may be the one-component polishing liquid described above, a polishing liquid obtained by diluting the polishing liquid storage liquid described above with water, or a polishing liquid obtained by mixing the slurry and additive liquid of the multi-component polishing liquid described above. The member to be polished is not particularly limited and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The member to be polished may be a wiring board or a circuit board.

[0083] The polished member may contain resin, particles containing a silicon compound, and a metal material. In the polishing process, a polished surface containing resin, particles containing a silicon compound, and a metal material can be polished. In the polishing process, at least a portion of the resin, particles containing a silicon compound, and metal material on the polished member can be polished and removed. Examples of metals in the metal material include copper, cobalt, tantalum, aluminum, titanium, tungsten, and manganese. Examples of silicon compounds include silicon oxides (e.g., SiO2), SiOC, and silicon nitrides (e.g., SiN). In the polishing process, the resin may contain an epoxy resin, and the polished member may contain epoxy resin and particles containing silicon oxide. The shape of the polished member is not particularly limited and may be, for example, a film-like structure, as well as other structures. The polished member may include a substrate having concave and convex portions on its surface, on which an object to be polished (at least one selected from the group consisting of resin, particles containing a silicon compound, and metal materials) is placed. The member to be polished may contain at least one material selected from the group consisting of resin, particles containing a silicon compound, and metal materials, as well as other materials to be polished (for example, insulating materials).

[0084] <Manufacturing method etc.> The component manufacturing method according to this embodiment includes a component fabrication step in which a component is obtained using a polished member (substrate) polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the component manufacturing method according to this embodiment. The component according to this embodiment is not particularly limited, and may be an electronic component (e.g., a semiconductor component such as a semiconductor package), a wafer (e.g., a semiconductor wafer), or a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing method according to this embodiment, an electronic component is obtained using a polished member polished by the polishing method according to this embodiment. As one aspect of the component manufacturing method according to this embodiment, a semiconductor component (e.g., a semiconductor package) is obtained using a polished member polished by the polishing method according to this embodiment. The component manufacturing method according to this embodiment may include a polishing step in which a polished member is polished by the polishing method according to this embodiment before the component fabrication step.

[0085] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a singulation step of singulating a polished member (substrate) polished by the polishing method according to this embodiment. The singulation step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain chips (e.g., semiconductor chips). As one aspect of the component manufacturing method according to this embodiment, the electronic component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain electronic components (e.g., semiconductor components). As one aspect of the component manufacturing method according to this embodiment, the semiconductor component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain semiconductor components (e.g., semiconductor packages).

[0086] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a connecting process for connecting (e.g., electrically connecting) a polished member (substrate) polished by the polishing method according to this embodiment to another connected object. The connected object to be connected to the polished member polished by the polishing method according to this embodiment is not particularly limited and may be the polished member polished by the polishing method according to this embodiment, or may be a connected object different from the polished member polished by the polishing method according to this embodiment. In the connecting process, the polished member and the connected object may be directly connected (connected in a state where the polished member and the connected object are in contact with each other), or the polished member and the connected object may be connected via another member (such as a conductive member). The connecting process may be performed before the singulation process, after the singulation process, or before or after the singulation process.

[0087] The connecting step may be a step of connecting a polished surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connected body, or a step of connecting a connecting surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connecting surface of a connected body. The connecting surface of the member to be polished may be a polished surface polished by the polishing method according to this embodiment. The connecting step can obtain a connected body comprising a member to be polished and a connected body. In the connecting step, if the connecting surface of the member to be polished has a metal portion, the connected body may be brought into contact with the metal portion. In the connecting step, if the connecting surface of the member to be polished has a metal portion and the connecting surface of the connected body has a metal portion, the metal portions may be brought into contact with each other. The metal portion may contain copper.

[0088] The device according to this embodiment (for example, an electronic device such as a semiconductor device) comprises a polished member polished by the polishing method according to this embodiment and at least one selected from the group consisting of the parts according to this embodiment. [Example]

[0089] Hereinafter, the present disclosure will be specifically described based on examples, but the present disclosure is not limited to these examples.

[0090] <Preparation of polishing solution> A polishing solution having the composition shown in Tables 1 to 4 was obtained by mixing each component and distilled water. Each table shows the content (unit: mass%) of each component based on the total mass of the polishing solution, with the remainder being distilled water. The cerium oxide particles used were "HS-8005" manufactured by Showa Denko Materials Co., Ltd. The colloidal silica used was "PL-3" manufactured by Fuso Chemical Co., Ltd. (secondary particle size: 70 nm). The colloidal silica content refers to the content of silica particles, which are the solid content. "MMB" stands for 3-methoxy-3-methyl-1-butanol, "HBTA" stands for 1-hydroxybenzotriazole, and "BTA" stands for benzotriazole. The polyglycerin used was "PGL750" manufactured by Sakamoto Pharmaceutical Co., Ltd. (glycerin decamer, weight average molecular weight: 750, hydroxyl value: 870-910).

[0091] <Average grain size of abrasive grains> The average particle size of the abrasive grains in the polishing solution of each example was determined using a Microtrac MT3300EXII manufactured by Microtrac Bell Co., Ltd. In each example, the average particle size D50 was 341 nm, and the average particle size D80 was 609 nm.

[0092] <pH of polishing solution> The pH of the polishing solution was measured using a pH meter (Model PHL-40, manufactured by DKK-TOA Corporation). After two-point calibration of the pH meter using a phthalate pH buffer solution (pH: 4.01) and a neutral phosphate pH buffer solution (pH: 6.86) as standard buffer solutions, the pH meter electrode was placed in the polishing solution and the value was measured after stabilization for at least two minutes. The results are shown in the tables.

[0093] <Evaluation> As the substrate A for evaluating the presence or absence of detachment marks, a substrate (a substrate comprising a metal portion containing copper and extending in the thickness direction of the substrate (thickness direction of the substrate) and a substrate containing epoxy resin and particles containing silicon oxide) covering the outer periphery of the metal portion) was prepared. The substrate A had a polished surface containing epoxy resin, particles containing silicon oxide, and copper.

[0094] As substrate B for evaluating the copper removal rate (Cu-RR) in Examples 1 to 3, 5 to 21, 27, 29 to 40 and Comparative Example 1, a substrate having a copper film formed on a φ300 mm silicon wafer was prepared.

[0095] In a polishing machine (Applied Materials, product name: Reflexion LK), a substrate (Substrate A or Substrate B) was attached to a holder for attaching a substrate to which an adsorption pad was attached. The holder was placed on a surface plate to which a porous urethane resin pad was attached, with the surface to be polished (for Substrate A, the area where the above-mentioned metal part was located) facing the pad. The above-mentioned polishing liquid was supplied onto the pad at a supply rate of 350 mL / min, and the substrate was pressed against the pad with a polishing load of 4 psi. At this time, the surface plate was held for 147 min. -1 , holder 153min -1 The polishing was carried out by rotating the substrate at a speed of 1000 rpm. The polishing time for substrate A was 5 minutes, and the polishing time for substrate B was 1 minute. After polishing, the substrates were thoroughly washed with pure water and then dried.

[0096] Using a field emission scanning electron microscope (Hitachi High-Tech Corporation, product name: S-4800), four 10 μm × 14 μm areas on the polished surface of substrate A after polishing (excluding areas within 5 mm from the edge of the polished surface) were observed to check for the presence or absence of detached marks with a minor axis of 1.0 μm or more (the presence or absence of detached particles containing silicon oxide). Cases where detached marks were not observed were evaluated as "A," and cases where detached marks were observed were evaluated as "B." The results are shown in Tables 1 to 4.

[0097] A metal film thickness measuring instrument (Hitachi Kokusai Electric Inc., product name: VR-120 / 08S) was used to measure the change in thickness of the copper film on substrate B before and after polishing, and the copper polishing rate was calculated. The thickness was measured at 65 equally spaced points on a line (diameter) passing through the center of substrate B, and the average value was taken as the copper film thickness. The measurement results are shown in Tables 1 to 4.

[0098] [Table 1]

[0099] [Table 2]

[0100] [Table 3]

[0101] [Table 4] [Explanation of symbols]

[0102] 10... Member to be polished, 12... Base material part, 12a... Resin, 12b... Particles, 14... Metal part.

Claims

1. A polishing liquid for polishing a workpiece, comprising: The abrasive grains contain cerium oxide, and an anticorrosion agent. The polishing liquid for the member to be polished contains a resin and particles containing a silicon compound.

2. 2. The polishing liquid according to claim 1, wherein the anticorrosive agent comprises at least one selected from the group consisting of a triazole compound, a pyridine compound, a pyrazole compound, a pyrimidine compound, an imidazole compound, a guanidine compound, a thiazole compound, a tetrazole compound, a triazine compound, and hexamethylenetetramine.

3. A polishing liquid for polishing a workpiece, comprising: The abrasive grains contain cerium oxide and an organic acid component, the content of the organic acid component is more than 0 mass % and 5 mass % or less based on the total mass of the polishing liquid, The polishing liquid for the member to be polished contains a resin and particles containing a silicon compound.

4. The polishing liquid according to any one of claims 1 to 3, wherein the particles comprise silicon oxide.

5. 4. The polishing liquid according to claim 1, further comprising an ether compound having a hydroxy group.

6. The polishing liquid according to claim 5 , wherein the ether compound comprises an alkoxy alcohol.

7. The polishing liquid according to claim 6 , wherein the ether compound comprises an alkoxy alcohol having a molecular weight of less than 200.

8. 7. The polishing liquid according to claim 6, wherein the alkoxy alcohol comprises a compound having an alkoxy group having 1 to 5 carbon atoms.

9. 7. The polishing liquid according to claim 6, wherein the alkoxy alcohol comprises 1-propoxy-2-propanol.

10. 7. The polishing liquid according to claim 6, wherein the alkoxy alcohol comprises 3-methoxy-3-methyl-1-butanol.

11. 7. The polishing liquid according to claim 6, wherein the content of the alkoxy alcohol is 0.2 to 0.8 mass % based on the total mass of the polishing liquid.

12. The polishing liquid according to claim 6 , wherein the ether compound further comprises a polyether.

13. The polishing fluid of claim 12 , wherein the polyether comprises polyglycerin.

14. 13. The polishing liquid according to claim 12, wherein the content of the polyether is 0.5 to 3 mass % based on the total mass of the polishing liquid.

15. 4. The polishing liquid according to claim 1, further comprising at least one selected from the group consisting of ammonium cations and ammonia.

16. The polishing liquid according to any one of claims 1 to 3, having a pH of 9.00 to 11.

00.

17. A polishing method, comprising polishing a workpiece containing a resin and particles containing a silicon compound with the polishing liquid according to any one of claims 1 to 3.

18. The polishing method according to claim 17 , wherein the resin comprises an epoxy resin.

19. A method for manufacturing a component, comprising obtaining a component using a member to be polished by the polishing method according to claim 17.

20. A method for producing a semiconductor component, comprising obtaining a semiconductor component using a polished member polished by the polishing method according to claim 17.

Images