Solar battery

Abstract

SOLUTION: The present invention relates to a solar battery including a first cell, and a second cell, where a first charge transport layer 31, a transparent conductive layer 32, a second charge transport layer 33, and a polysilicon layer 34 are disposed between a first photoelectric conversion layer 10 of the first cell and a second photoelectric conversion layer 20 of the second cell, where the second charge transport layer is disposed between the polysilicon layer and the transparent conductive layer, and where charge transport property of the second charge transport layer is the same as that of the polysilicon layer. In the solar battery according to the present invention, a first charge transport layer, a transparent conductive layer, a second charge transport layer, and a polysilicon layer are sequentially arranged between the first photoelectric conversion layer and the second photoelectric conversion layer. Especially, installation of the second charge transport layer may protect the polysilicon layer, may effectively transport the same type of charges, may avoid occurrence of recombination phenomena at an interface or inside a thin film, and may effectively improve efficiency of the battery.EFFECT: A solar battery of the present application has features such as a simple structure, a simple manufacturing process, and a low cost.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present application relates to solar cells. [Background technology]

[0002] Solar cells are currently widely used as clean energy sources, and in particular, as carbon neutrality and energy conservation become mainstream trends in the international community, solar power generation has attracted more and more attention as an important part of clean energy. However, the light utilization efficiency of current solar cells is still below ideal, and there is still a need to rationally design the structure of solar cells and improve the cell efficiency. Summary of the Invention [Means for solving the problem]

[0003] In one aspect, the solar cell of the present application comprises a first cell having a first photoelectric conversion layer including a first photoelectric conversion material having a first band gap, and a second cell having a second photoelectric conversion layer including a second photoelectric conversion material having a second band gap, wherein the first band gap is not equal to the second band gap, and a first charge transport layer, a transparent conductive layer, a second charge transport layer, and a polycrystalline silicon layer are provided between the first and second photoelectric conversion layers in this order, and the second charge transport layer is provided between the polycrystalline silicon layer and the transparent conductive layer, and the second charge transport layer has the same charge transport properties as the polycrystalline silicon layer.

[0004] In another aspect, a method of manufacturing a solar cell includes forming a second cell having a second photovoltaic layer including a second photovoltaic material having a second bandgap; sequentially forming a polycrystalline silicon layer, a second charge transport layer, a transparent conductive layer, and a first charge transport layer on the second photovoltaic layer; and forming a first cell having a first photovoltaic layer including a first photovoltaic material having a first bandgap unequal to the second bandgap, wherein the second charge transport layer is formed by thermal evaporation, atomic layer deposition, rapid plasma deposition, or solution deposition. [Effects of the Invention]

[0005] The solar cell of the present application has a first charge transport layer, a transparent conductive layer, a second charge transport layer, and a polycrystalline silicon layer sequentially disposed between a first photoelectric conversion layer and a second photoelectric conversion layer. In particular, the second charge transport layer can protect the polycrystalline silicon layer, effectively transport the same type of charge, prevent recombination at the interface or inside the thin film, and effectively improve cell efficiency. The solar cell of the present application has features such as a simple structure, a convenient manufacturing process, and low cost. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a schematic diagram illustrating the structure of an embodiment of a solar cell of the present application. [Figure 2] FIG. 1 is a graph showing current density-voltage curves of the solar cells obtained in Example 1 and Comparative Example 1. DETAILED DESCRIPTION OF THE INVENTION

[0007] The present invention will be described in more detail below with reference to the drawings and examples, which will make the features and advantages of the present invention more apparent.

[0008] As used herein, the term "exemplary" means "serving as an example or example, or illustrative." Any embodiment described herein as "exemplary" is not necessarily to be construed as superior to other embodiments. While the drawings illustrate various aspects of the embodiments, the drawings are not necessarily drawn to scale unless specifically noted.

[0009] Furthermore, the technical features according to different embodiments of the present application described below can be combined with each other as long as they are not inconsistent with each other.

[0010] The present application provides a solar cell. The solar cell includes a first cell having a first photoelectric conversion layer including a first photoelectric conversion material having a first bandgap, and a second cell having a second photoelectric conversion layer including a second photoelectric conversion material having a second bandgap. The first bandgap is not equal to the second bandgap. A first charge transport layer, a transparent conductive layer, a second charge transport layer, and a polycrystalline silicon layer are provided between the first and second photoelectric conversion layers, in this order. The second charge transport layer is provided between the polycrystalline silicon layer and the transparent conductive layer, and has charge transport properties identical to those of the polycrystalline silicon layer. The first charge transport layer is provided between the first photoelectric conversion layer and the transparent conductive layer, and has charge transport properties opposite to those of the second charge transport layer.

[0011] 1 shows one embodiment of the solar cell of the present application. The solar cell of the present application will be further described below with reference to FIG.

[0012] The solar cell of the present application has a laminated structure and includes a first cell, a second cell, and an intermediate structure between the photoelectric conversion layers of the first cell and the second cell.

[0013] The first cell includes a first photoelectric conversion layer 10 including a first photoelectric conversion material having a first bandgap. The second cell includes a second photoelectric conversion layer 20 including a second photoelectric conversion material having a second bandgap. The first cell is located above the second cell such that the first photoelectric conversion layer 10 is located above the second photoelectric conversion layer 20. In one embodiment, the first bandgap of the first photoelectric conversion material may be larger than the second bandgap of the second photoelectric conversion material. Of course, the first bandgap of the first photoelectric conversion material may be smaller than the second bandgap of the second photoelectric conversion material. However, it is preferred that the first bandgap of the first photoelectric conversion material be larger than the second bandgap of the second photoelectric conversion material.

[0014] In one embodiment, the first photoelectric conversion material is selected from perovskite, amorphous silicon, GaInP, CdTe, copper indium gallium selenide thin film, preferably the first photoelectric conversion material is perovskite.

[0015] In one embodiment, the second photoelectric conversion material is selected from single crystal silicon, polycrystalline silicon, GaAs, CdTe, and perovskite, and preferably is single crystal silicon. The thickness of the second photoelectric conversion layer 20 may be 1-500 μm, for example, 1-200 μm.

[0016] In the present application, the perovskite may be ABX3, where A is FA, MA, Cs + and Rb + B is Pb 2+ , Sn 2+ and Sr 2+ and X is any one or a combination of at least two of the following: - , I - and Cl -The perovskite layer may have a band gap of 1.40-2.3 eV. The perovskite layer made of the perovskite material may have a thickness of 1-5000 nm, for example, the perovskite layer may have a thickness of 100-1000 nm, for example, the thickness may be 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm.

[0017] The intermediate structure between the photoelectric conversion layers 10, 20 of the first and second cells includes at least a first charge transport layer 31, a transparent conductive layer 32, a second charge transport layer 33, and a polycrystalline silicon layer 34. In particular, in an embodiment in which the first photoelectric conversion material is a perovskite material and the second photoelectric conversion material is single-crystal silicon, the first charge transport layer 31, the transparent conductive layer 32, the second charge transport layer 33, and the polycrystalline silicon layer 34 can be provided in order from top to bottom (with the incident surface facing up).

[0018] The first charge transport layer 31, the transparent conductive layer 32, the second charge transport layer 33, and the polycrystalline silicon layer 34 will be described below.

[0019] In one embodiment, the polysilicon of the polysilicon layer 34 is n-type polysilicon and has a thickness of 1 nm-100 μm. In one embodiment, the polysilicon of the polysilicon layer 34 is p-type polysilicon and has a thickness of 1 nm-100 μm. The method for forming the polysilicon layer 34 may include low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition (PECVD).

[0020] In the present application, the second charge transport layer 33 is provided between the polycrystalline silicon layer 34 and the transparent conductive layer 32, the thickness of the second charge transport layer 33 is smaller than the thickness of the transparent conductive layer 32, and the charge transport properties of the second charge transport layer 33 are the same as those of the polycrystalline silicon layer 34. The first charge transport layer 31 is provided between the first photoelectric conversion layer 10 and the transparent conductive layer 32, and the charge transport properties of the first charge transport layer 31 and the second charge transport layer 33 are opposite to each other.

[0021] In one embodiment, the second charge transport layer 33 is bonded to the surface of the polycrystalline silicon layer 34 away from the second photoelectric conversion layer 20 and is located on top of the polycrystalline silicon layer 34. When forming the second charge transport layer 33 on the polycrystalline silicon layer 34, a relatively mild process can be used to avoid damaging the polycrystalline silicon layer 34. In this application, the thickness of the second charge transport layer 33 may be 0.1-100 nm, for example, 1-50 nm or 1-20 nm. The second charge transport layer 33 protects the surface of the polycrystalline silicon layer 34 and also functions as a charge transport layer. Methods for fabricating the second charge transport layer 33 may include thermal evaporation, atomic layer deposition (ALD), rapid plasma deposition, or solution deposition. The second charge transport layer 33 can reduce damage to the polycrystalline silicon layer 34 during thin film deposition, optimize the interface, and improve the efficiency of the stacked battery.

[0022] In the present application, the charge transport properties of the second charge transport layer 33 can be adjusted according to the properties of the polycrystalline silicon layer 34. If the polycrystalline silicon of the polycrystalline silicon layer 34 is p-type polycrystalline silicon, the material of the second charge transport layer 33 is a p-type charge transport material, and if the polycrystalline silicon of the polycrystalline silicon layer 34 is n-type polycrystalline silicon, the material of the second charge transport layer 33 is an n-type charge transport material. In this way, the consistency of the charge transport type can be maintained, the same type of charges can be effectively transported, and recombination at the interface or inside the thin film can be avoided.

[0023] In the present application, the p-type charge transport material may be one or more selected from NiOx (x is 0.1 to 10), CuFeO2, CuAlO2, CuSCN, Cu2O, WO3, CuI2, MoS2, FeS2, P3HT, Spiro-meoTAD, Poly-TBD, PFN, PEDOT:PSS, PTAA, and Spiro-TTB. The n-type charge transport material may be one or more selected from TiO2, SnO2, ZnO, ZrO2, In2O3, CdS, CdSe, BaSnO3, Nb2O5, C60, and PCBM.

[0024] In the present application, the transparent conductive layer 32 is provided above the second charge transport layer 33. In one embodiment, the transparent conductive layer 32 is attached to the surface of the second charge transport layer 33 away from the second photoelectric conversion layer 20, and is located on the second charge transport layer 33. In one embodiment, the thickness of the transparent conductive layer 32 may be 1-1000 nm, for example, 1-100 nm, e.g., 20 nm.

[0025] In one embodiment, the transparent conductive layer 32 may be made of one or more materials selected from the group consisting of TiO2, SnO2, ZnO, ZrO2, GZO, AZO, IZO, FTO, ITO, BaSnO3, Ti-doped SnO2, and Zn-doped SnO2, and is preferably made of a material with relatively strong lateral conductivity, such as ITO or IZO. Its manufacturing method may be physical vapor deposition, solution deposition, thermal evaporation, electron beam thermal evaporation, or atomic layer deposition, but physical vapor deposition is generally used.

[0026] In the present application, the material of the transparent conductive layer 32 is different from the material of the second charge transport layer 33. In the present application, a first charge transport layer 31 is further included between the first photoelectric conversion layer 10 and the second photoelectric conversion layer 20. This first charge transport layer 31 is usually provided above the transparent conductive layer 32. In one embodiment, the first charge transport layer 31 is attached to the surface of the transparent conductive layer 32 remote from the second photoelectric conversion layer 20 and is located on the transparent conductive layer 32.

[0027] The first charge transport layer 31 and the second charge transport layer 33 are both charge transport layers, but have different requirements for manufacturing methods, thickness, etc. In this application, the thickness of the first charge transport layer 31 may be 1-500 nm, for example, 1-100 nm, for example, 30 nm. In one embodiment, the thickness of the first charge transport layer 31 may be greater than the thickness of the second charge transport layer 33.

[0028] The charge transport properties of the first charge transport layer 31 and the second charge transport layer 33 are opposite. When the constituent material of the second charge transport layer 33 is an n-type charge transport material, the constituent material of the first charge transport layer 31 is a p-type charge transport material, and when the constituent material of the second charge transport layer 33 is a p-type charge transport material, the constituent material of the first charge transport layer 31 is an n-type charge transport material. By doing so, the currents of the first and second batteries can be matched, and the type of charge transported downward by the first battery including the first photoelectric conversion layer 10 can be reversed from the type of charge transported upward by the second battery including the second photoelectric conversion layer 20.

[0029] In the present application, the p-type charge transport material may be one or more selected from NiOx (x is 0.1 to 10), CuFeO2, CuAlO2, CuSCN, Cu2O;WO3, CuI2, MoS2, FeS2, P3HT, Spiro-meoTAD, Poly-TBD, PFN, PEDOT:PSS, PTAA, and Spiro-TTB. The n-type charge transport material may be one or more selected from TiO2, SnO2, ZnO, ZrO2, In2O3, CdS, CdSe, BaSnO3, Nb2O5, C60, and PCBM.

[0030] The method for manufacturing the first charge transport layer 31 may be solution deposition, thermal evaporation, sputtering, atomic layer deposition, or the like.

[0031] As shown in FIG. 1, the solar cell includes the following layers stacked from the light-incident surface: a top metal electrode 11, a top transparent conductive layer 12, a third charge transport layer 13, a first photoelectric conversion layer 10, a first charge transport layer 31, a transparent conductive layer 32, a second charge transport layer 33, a polycrystalline silicon layer 34, a tunnel layer 21, a second photoelectric conversion layer 20, a diffused silicon layer 22, a passivation layer 23, and a bottom metal electrode 24.

[0032] In the present application, a tunnel layer 21 may be present between the polycrystalline silicon layer 34 and the second photoelectric conversion layer (single crystalline silicon layer) 20. Methods for forming the tunnel layer 21 include high-temperature thermal oxidation, nitric acid oxidation, and ozone oxidation. The thickness of the tunnel layer 21 may be 0.1-100 nm.

[0033] In the present application, a diffused silicon layer 22 may be formed on a surface of the second photoelectric conversion layer (single crystal silicon layer) 20 away from the tunnel layer 21, and the charge transport properties of the diffused silicon layer 22 are opposite to those of the second photoelectric conversion layer (single crystal silicon layer) 20. In one embodiment, the second photoelectric conversion layer (single crystal silicon layer) 20 is n-type single crystal silicon, and the diffused silicon layer 22 is p-type single crystal silicon.

[0034] A passivation layer 23 may be provided on the surface of the diffused silicon layer 22 away from the tunnel layer 21. The thickness of the passivation layer 23 may be 0.1-500 μm, and the material may include one or a combination of at least two of SiO2, silicon nitride, aluminum oxide, and silicon oxynitride.

[0035] At least one bottom metal electrode 24 is inserted into the diffused silicon layer 22. The material of the bottom metal electrode 24 includes one or a combination of at least two of Au, Ag, Al, and Cu.

[0036] As a result, a second cell including the second photoelectric conversion layer 20 is formed.

[0037] A third charge transport layer 13 may be formed on the first photoelectric conversion layer 10. The third charge transport layer 13 and the first charge transport layer 31 can each extract different types of charges from the first photoelectric conversion layer 10 and transport them to an external circuit. The constituent material of the third charge transport layer 13 has the same charge transport properties as the constituent material of the second charge transport layer 33 and is opposite to the charge transport properties of the constituent material of the first charge transport layer 31. When the constituent material of the second charge transport layer 33 is an n-type charge transport material, the constituent material of the third charge transport layer 13 is an n-type charge transport material, and when the constituent material of the second charge transport layer 33 is a p-type charge transport material, the constituent material of the third charge transport layer 13 is a p-type charge transport material.

[0038] In the present application, the p-type charge transport material may be one or more selected from NiOx (x is 0.1 to 10), CuFeO2, CuAlO2, CuSCN, Cu2O;WO3, CuI2, MoS2, FeS2, P3HT, Spiro-meoTAD, Poly-TBD, PFN, PEDOT:PSS, PTAA, and Spiro-TTB. The n-type charge transport material may be one or more selected from TiO2, SnO2, ZnO, ZrO2, In2O3, CdS, CdSe, BaSnO3, Nb2O5, C60, and PCBM.

[0039] The thickness of the third charge transport layer 13 is 1-500 nm, which is thicker than the thickness of the second charge transport layer 33. The method for manufacturing the third charge transport layer 13 may be a solution process, a thermal evaporation process, a sputtering process, an atomic layer deposition process, or the like.

[0040] An upper transparent conductive layer 12 may be formed on the third charge transport layer 13. In one embodiment, the upper transparent conductive layer 12 may have a thickness of 0.1-1000 nm and may be made of one or more materials selected from TiO2, SnO2, ZnO, ZrO2, GZO, AZO, IZO, FTO, ITO, BaSnO3, Ti-doped SnO2, and Zn-doped SnO2. Its fabrication method may be sputtering, solution deposition, thermal evaporation, electron beam thermal evaporation, or atomic layer deposition, with sputtering being the most common.

[0041] At least one upper metal electrode 11 may be formed on the upper transparent conductive layer 12. The material of the upper metal electrode 11 includes one or a combination of at least two of Au, Ag, Al, and Cu.

[0042] In this way, a first cell including the first photoelectric conversion layer 10 can be formed.

[0043] Optionally, additional layers may be provided between the layers of the second and first cells to adjust or passivate the interfaces and improve device efficiency. For example, a buffer layer 14 may be formed between the third charge transport layer 13 and the first photoelectric conversion layer 10. The buffer layer 14 may be formed from one or a combination of at least two of molybdenum oxide, LiF, C60, SnO2, TiO2, SiO2, and the like. The buffer layer 14 may be formed by one or a combination of at least two of ALD, PECVD, spin coating, sputtering, and thermal evaporation. Furthermore, a reflection-reducing layer (not shown) may be formed on the upper transparent conductive layer 12. The reflection-reducing layer may be formed from materials such as LiF, MgF2, Si3N4, SiO2, or dimethylsiloxane polymer, and the formation method may be one or a combination of at least two of evaporation, sputtering, and ALD.

[0044] The present application provides a method for manufacturing a solar cell, the method including forming a second cell having a second photoelectric conversion layer including a second photoelectric conversion material having a second bandgap, sequentially forming a polycrystalline silicon layer, a second charge transport layer, a transparent conductive layer, and a first charge transport layer on the second photoelectric conversion layer, and forming a first cell having a first photoelectric conversion layer including a first photoelectric conversion material having a first bandgap unequal to the second bandgap.

[0045] The second photoelectric conversion layer, polycrystalline silicon layer, and first charge transport layer between the first and second cells can be formed by various methods known in the art. However, in this application, the second charge transport layer is formed by a mild method such as thermal evaporation, atomic layer deposition, rapid plasma deposition, or solution deposition, which can reduce damage during thin film deposition on the polycrystalline silicon layer, optimize the interface, and improve the efficiency of the stacked cell. In one embodiment, the transparent conductive layer is formed by physical vapor deposition.

[0046] Example 1 (1) Using a 180 μm thick N-type single crystal silicon substrate, normal texturing is performed to a texture degree of 2-3 μm, followed by hydrofluoric acid and RCA cleaning. (2) Phosphorus is diffused onto the surface of the single crystal silicon substrate using a diffusion furnace to form a p-type emitter. (3) On the backside of the single crystal silicon substrate, an ultra-thin tunnel silicon oxide and phosphorus-doped amorphous silicon with a thickness of 1 nm are fabricated by the LPCVD method, and n-type polycrystalline silicon with a thickness of 100 nm is formed by high-temperature activation. (4) A 75 nm thick silicon nitride layer is deposited on the p-type emitter using a PECVD system. (5) An Ag electrode is formed on the p-type emitter side by screen printing. (6) A charge transport layer of SnO2 with a thickness of 5 nm is deposited on n-type polycrystalline silicon by atomic layer deposition. (7) A transparent conductive layer of ITO is deposited to a thickness of 15 nm on the charge transport layer of SnO2 by magnetron sputtering. (8) A charge transport layer of NiO is deposited on the ITO using magnetron sputtering to a thickness of 40 nm. (9) 2PACz with a thickness of 50 nm is deposited on the NiO layer by blade coating. (10) A perovskite light-absorbing layer Cs with a band gap of approximately 1.69 eV and a thickness of 600 nm. 0.15 FA 0.85Pb(I 0.7 Br 0.3 ) 3 is produced by the blade coating method. (11) A 5 nm thick buffer layer of C60 is deposited on the perovskite layer by thermal evaporation. (12) An electron transport layer of SnO2 with a thickness of 20 nm is deposited on the buffer layer by atomic layer deposition. (13) Using a magnetron sputtering device, a transparent conductive layer of IZO with a thickness of 100 nm is deposited on the SnO2. (14) A 100 nm thick Ag metal gate line layer is fabricated using thermal evaporation to complete the cell fabrication.

[0047] Comparative Example 1 The manufacturing process for the battery is the same as that of Example 1, except that step (6) above is not included. In step (7), a transparent conductive layer of ITO with a thickness of 15 nm is deposited directly on the n-type polycrystalline silicon by magnetron sputtering.

[0048] test The stacked cells of Example 1 and Comparative Example 1 were placed in a 100 mW / cm 2 The cells were placed under AM 1.5G standard simulated sunlight, and the current density-voltage curves of the cells were measured. The open circuit voltage Voc, short circuit current density Jsc, and fill factor FF of the cells were obtained, and the photoelectric conversion efficiency of the cells was calculated. The results are shown in Table 1. The current density-voltage curves of the stacked cells obtained in Example 1 and Comparative Example 1 are shown in Figure 2.

[0049] In Example 1, the addition of the second charge transport layer SnO2 significantly improved all parameters of the stacked cell, increasing the photoelectric conversion efficiency from 18.71% to 23.99%. The improved efficiency not only helps the stacked cell convert more light into electricity, but also reduces the system cost.

[0050] [Table 1]

[0051] The above describes a preferred embodiment of the present invention, but the present invention is not limited to the above embodiment and can be implemented in various modifications within the scope of the gist of the present invention.

Claims

1. A solar cell, a first cell including a first photovoltaic layer including a first photovoltaic material having a first bandgap; a second cell including a second photovoltaic layer including a second photovoltaic material having a second band gap; the first bandgap is not equal to the second bandgap; a first charge transport layer, a transparent conductive layer, a second charge transport layer, and a polycrystalline silicon layer are provided in this order between the first photoelectric conversion layer and the second photoelectric conversion layer; the second charge transport layer is provided between the polycrystalline silicon layer and the transparent conductive layer; The second charge transport layer has the same charge transport properties as the polycrystalline silicon layer. Solar cell.

2. the polycrystalline silicon of the polycrystalline silicon layer is p-type polycrystalline silicon; The constituent material of the second charge transport layer is a p-type charge transport material. The solar cell according to claim 1.

3. The constituent material of the first charge transport layer is an n-type charge transport material. The solar cell according to claim 2.

4. the polycrystalline silicon of the polycrystalline silicon layer is n-type polycrystalline silicon; The constituent material of the second charge transport layer is an n-type charge transport material. The solar cell according to claim 1.

5. The constituent material of the first charge transport layer is a p-type charge transport material. The solar cell according to claim 4.

6. The p-type charge transport material is NiO x (x is 0.1 to 10), CuFeO 2 , CuAlO 2 , CuSCN, Cu 2 O, WO 3 , CuI 2 , MoS 2 , FeS 2 , P 3 HT, Spiro-meoTAD, Poly-TBD, PFN, PEDOT:PSS, PTAA, Spiro-TTB, The n-type charge transport material is TiO 2 , SnO 2 , ZnO, ZrO 2 , In 2 O 3 , CdS, CdSe, BaSnO 3 , Nb 2 O 5 , C60, PCBM The solar cell according to claim 3 or claim 5.

7. The thickness of the first charge transport layer is greater than the thickness of the second charge transport layer. The solar cell according to claim 1 .

8. The thickness of the first charge transport layer is 1-500 nm. The solar cell according to claim 7 .

9. the second charge transport layer is bonded to a surface of the polycrystalline silicon layer remote from the second photoelectric conversion layer and is located on the polycrystalline silicon layer; the transparent conductive layer is attached to a surface of the second charge transport layer away from the second photoelectric conversion layer and is located on the second charge transport layer; The solar cell according to claim 1.

10. the transparent conductive layer has a thickness of 1-1000 nm; The material of the transparent conductive layer is TiO 2 , SnO 2 , ZnO, ZrO 2 , GZO, AZO, IZO, FTO, ITO, BaSnO 3 , Ti-doped SnO 2 , Zn-doped SnO 2 Contains one or more selected from The solar cell according to claim 1.

11. the first photoelectric conversion material is selected from perovskite, amorphous silicon, GaInP, CdTe, and copper indium gallium selenide thin film; The second photoelectric conversion material is selected from single crystal silicon, polycrystalline silicon, GaAs, CdTe, and perovskite. The solar cell according to claim 1 .

12. The first photoelectric conversion material is a perovskite material having a band gap of 1.40-2.3 eV, and the thickness of the first photoelectric conversion layer is 1-5000 nm. The solar cell according to claim 11.

13. The second photoelectric conversion material is single crystal silicon. The solar cell according to claim 11.

14. The solar cell includes an upper metal electrode, an upper transparent conductive layer, a third charge transport layer, the first photoelectric conversion layer, the first charge transport layer, the transparent conductive layer, the second charge transport layer, the polycrystalline silicon layer, a tunnel layer, the second photoelectric conversion layer, a passivation layer, and a bottom metal electrode, which are stacked from a light incident surface, Here, the constituent material of the third charge transport layer has the same charge transport properties as the constituent material of the second charge transport layer. The solar cell according to claim 1.

15. The thickness of the third charge transport layer is greater than the thickness of the second charge transport layer. The solar cell according to claim 14.

16. The thickness of the third charge transport layer is 1-500 nm. The solar cell according to claim 15.

17. the thickness of the first photoelectric conversion layer is 100-1000 nm, and the first photoelectric conversion material is a perovskite having a band gap of 1.40-2.3 eV; The second photoelectric conversion layer has a thickness of 1-200 μm, and the second photoelectric conversion material is n-type single crystal silicon. The solar cell according to claim 14.

18. The perovskite material is a 3D ABX 3 where A is CH(NH 2 ) 2 + , C.H. 3 NH3 + , C(NH 2 ) 3 + , Cs + and Rb + B is Pb 2+ , Sn 2+ and Sr 2+ and X is any one or a combination of at least two of the following: - , I - and Cl - Contains one or a combination of at least two of the following: The solar cell according to claim 17.

19. The thickness of the upper transparent conductive layer is 0.1-1000 nm, and the thickness of the transparent conductive layer is 0.1-1000 nm. The material of the upper transparent conductive layer and the transparent conductive layer is TiO 2 , SnO 2 , ZnO, ZrO 2 , GZO, AZO, IZO, FTO, ITO, BaSnO 3 , Ti-doped SnO 2 , Zn-doped SnO 2 One or more selected from the material of the top metal electrode and the bottom metal electrode comprises one or a combination of at least two of Au, Ag, Al, and Cu; The third charge transport layer has a thickness of 1-500 nm, the second charge transport layer has a thickness of 1-100 nm, and the third charge transport layer and the second charge transport layer are made of TiO 2 , SnO 2 , ZnO, ZrO 2 , In 2 O 3 , CdS, CdSe, BaSnO 3 , Nb 2 O 5 , C60, PCBM, The first charge transport layer has a thickness of 1-500 nm and is made of NiO x (x is 0.1 to 10), CuFeO 2 , CuAlO 2 , CuSCN, Cu 2 O, WO 3 , CuI 2 , MoS 2 , FeS 2 , P 3 HT, Spiro-meoTAD, Poly-TBD, PFN, PEDOT:PSS, PTAA, Spiro-TTB, the thickness of the first charge transport layer is greater than the thickness of the second charge transport layer; The thickness of the polycrystalline silicon layer is 1 nm-100 μm, and the material is n-type polycrystalline silicon; The thickness of the passivation layer is 0.1-500 μm, and the material is SiO 2 , silicon nitride, aluminum oxide, and silicon oxynitride, or a combination of at least two of these; The thickness of the tunnel layer is 0.1-100 nm. The solar cell according to claim 14.

20. 1. A method for manufacturing a solar cell, comprising: forming a second cell having a second photovoltaic layer including a second photovoltaic material having a second bandgap; forming a polycrystalline silicon layer, a second charge transport layer, a transparent conductive layer, and a first charge transport layer in sequence on the second photoelectric conversion layer; forming a first cell having a first photovoltaic layer comprising a first photovoltaic material having a first bandgap unequal to the second bandgap; The second charge transport layer is formed by thermal evaporation, atomic layer deposition, rapid plasma deposition, or solution deposition. A method for manufacturing a solar cell.

21. The transparent conductive layer is formed by physical vapor deposition.

21. The method of claim 20.

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