Substrate processing equipment

Abstract

To reduce particles flowing into a vacuum preliminary chamber in substrate processing equipment that performs a predetermined process on a substrate within a processing chamber having vacuum inside.SOLUTION: Substrate processing equipment 1 that performs a predetermined process on a substrate S within a processing chamber 4 having vacuum inside comprises: a vacuum preliminary chamber 6; a valve element housing chamber 10 which is adjacent to the vacuum preliminary chamber 6 and houses a first valve element; a first transportation path 12 which has a first opening 12a communicating with the valve element housing chamber 10 and through which the substrate S passes; a second transportation path 13 which has a second opening 13a communicating with the valve element housing chamber 10 and a third opening 13b communicating with the vacuum preliminary chamber 6 and through which the substrate S passes; a first vacuum exhaust path 9a which communicates with the valve element housing chamber 10 and evacuates the valve element housing chamber 10; and a second vacuum exhaust path 9b which communicates with the vacuum preliminary chamber 6 and evacuates the vacuum preliminary chamber 6. The first opening 12a is opened and closed by the first valve element 11a.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for performing a predetermined process on a substrate in a processing chamber the interior of which is kept under vacuum. [Background technology]

[0002] An ion implantation apparatus disclosed in Patent Document 1 is an example of a substrate processing apparatus used in flat panel display manufacturing processes and semiconductor manufacturing processes. This ion implantation apparatus includes an ion source, a mass analysis electromagnet, and a processing chamber with a vacuum atmosphere inside, and implants ions into the substrate by irradiating the substrate with an ion beam in the processing chamber. In this ion implantation apparatus, the ion beam is extracted from plasma generated inside the ion source, and after unnecessary ions are removed by the mass analysis electromagnet, the ion beam is introduced into the processing chamber.

[0003] The ion implantation apparatus further includes a transfer chamber adjacent to the processing chamber and two auxiliary vacuum chambers adjacent to the transfer chamber. Each auxiliary vacuum chamber has an opening for transferring a substrate to and from the transfer chamber, and an opening for transferring a substrate to and from the outside. The ion implantation apparatus further includes a gate valve device for opening and closing these openings.

[0004] In this ion implantation apparatus, a substrate is first loaded from the outside into one of the vacuum pre-chambers, then transferred through a transfer chamber to the processing chamber, and after ion implantation in the processing chamber, the substrate is again transferred through the transfer chamber to one of the vacuum pre-chambers or the other vacuum pre-chamber, and then transferred to the outside. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2017-022061 Summary of the Invention [Problem to be solved by the invention]

[0006] In the ion implantation apparatus of Patent Document 1, when a substrate is loaded from the outside into the vacuum preparatory chamber, the gate valve device is actuated to close the opening leading to the outside of the vacuum preparatory chamber. The vacuum preparatory chamber is then evacuated. At this time, particles generated inside the gate valve device due to the actuation of the gate valve device, etc., may be carried into the vacuum preparatory chamber by the air current generated by the evacuation of the vacuum preparatory chamber and adhere to the substrate. Therefore, in the ion implantation apparatus of Patent Document 1, particles adhering to the substrate may cause processing defects during ion implantation.

[0007] The present invention is intended to solve the above problem, and has as its object to reduce particles that flow into the vacuum pre-chamber. [Means for solving the problem]

[0008] The substrate processing apparatus of the present invention is a substrate processing apparatus that performs a predetermined process on a substrate in a processing chamber the interior of which is kept evacuated, and is equipped with a vacuum reserve chamber, a valve body accommodating chamber adjacent to the vacuum reserve chamber and accommodating a first valve body, a first transport path through which the substrate passes and having a first opening leading to the valve body accommodating chamber, a second transport path through which the substrate passes and having a second opening leading to the valve body accommodating chamber and a third opening leading to the vacuum reserve chamber, a first vacuum exhaust path leading to the valve body accommodating chamber and for evacuating the valve body accommodating chamber, and a second vacuum exhaust path leading to the vacuum reserve chamber and for evacuating the vacuum reserve chamber, and is configured so that the first opening is opened and closed by the first valve body.

[0009] According to this configuration, the valve element housing chamber and the vacuum reserve chamber are each evacuated through the first vacuum exhaust path and the second vacuum exhaust path. If the valve element housing chamber and the vacuum reserve chamber were evacuated only through the second vacuum exhaust path, the gas in the valve element housing chamber would flow into the vacuum reserve chamber through the second transfer path and then be exhausted through the second vacuum exhaust path. Therefore, in this case, particles generated in the valve element housing chamber due to the operation of the first valve element, etc., would ride the flow of gas from the valve element housing chamber toward the vacuum reserve chamber and move to the vacuum reserve chamber. In contrast, according to the configuration of the present invention, the valve element housing chamber and the vacuum reserve chamber are evacuated via the first vacuum exhaust path and the second vacuum exhaust path, respectively, thereby preventing gas from flowing from the valve element housing chamber to the vacuum reserve chamber. As a result, particles present in the valve element housing chamber are prevented from flowing into the vacuum reserve chamber. Furthermore, at least some of the particles present in the valve element housing chamber are discharged to the outside of the valve element housing chamber via the first vacuum exhaust path.

[0010] The substrate processing apparatus of the present invention may further include a second valve body accommodated in the valve body accommodating chamber, and the second opening may be opened and closed by the second valve body.

[0011] According to this configuration, the first valve body closes the first opening, and the second valve body closes the second opening, thereby blocking the first transfer path and the second transfer path, respectively. In other words, the internal space of the valve body accommodating chamber is isolated from the vacuum reserve chamber. Therefore, the vacuum reserve chamber and the valve body accommodating chamber are evacuated with the internal spaces of the valve body accommodating chamber and the vacuum reserve chamber isolated from each other. As a result, particles present in the valve body accommodating chamber are further prevented from flowing from the valve body accommodating chamber into the vacuum reserve chamber.

[0012] Furthermore, the substrate processing apparatus of the present invention may be configured such that an air vent opening communicating with the first vacuum exhaust path is formed in the valve body accommodating chamber, and the air vent opening is located below the first opening and the second opening.

[0013] According to this configuration, while the valve element accommodating chamber is being evacuated, the gas in the valve element accommodating chamber flows downward and is discharged to the outside of the valve element accommodating chamber through the vent hole located below the first opening and the second opening. Therefore, particles generated in the valve element accommodating chamber are less likely to be stirred up within the valve element accommodating chamber, and the particles are prevented from accumulating near the first opening and the second opening. As a result, the particles are further prevented from flowing from the valve element accommodating chamber into the vacuum reserve chamber.

[0014] In addition, the substrate processing apparatus of the present invention may further include a vacuum pump that evacuates the vacuum reserve chamber and the valve body accommodating chamber, and the first vacuum exhaust path and the second vacuum exhaust path may be configured to merge midway along their respective paths and lead to the vacuum pump.

[0015] According to this configuration, the first vacuum exhaust path and the second vacuum exhaust path merge midway along their respective paths and are connected to the vacuum pump, so that the vacuum reserve chamber and the valve body accommodating chamber can be evacuated using a single vacuum pump.

[0016] Furthermore, the ion implantation apparatus of the present invention may further include a first gas supply path through which a gas flows to open the valve body accommodating chamber to the atmosphere, and a gas supply unit connected to the first gas supply path and supplying the gas, wherein the first gas supply path merges with the first vacuum exhaust path at a junction provided midway from the gas supply unit to the valve body accommodating chamber, and the gas reaches the valve body accommodating chamber by passing through the junction and a partial region of the first vacuum exhaust path in sequence.

[0017] Furthermore, the ion implantation apparatus of the present invention may further include a vacuum pump connected to the first vacuum exhaust path and a dust collector that captures particles passing through the first vacuum exhaust path, and the dust collector may be configured to be located midway along the first vacuum exhaust path from the confluence to the vacuum pump.

[0018] With this configuration, particles passing through the first vacuum exhaust path are captured by the dust collecting unit. The dust collecting unit is also located midway from the junction of the first vacuum exhaust path to the vacuum pump. Therefore, even if the first air supply path merges with the first vacuum exhaust path midway, when the valve body housing chamber is opened to the atmosphere, the gas used for opening the valve body housing chamber to the atmosphere does not pass through the dust collecting unit.

[0019] In addition, the ion implantation apparatus of the present invention may further include a first air supply path through which a gas flows to open the valve body accommodating chamber to the atmosphere, and the first vacuum exhaust path and the first air supply path may be configured to be independent of each other.

[0020] In a configuration in which the first vacuum exhaust path and the first air supply path share a portion of each other, it is conceivable that particles that are not discharged to the outside but remain in the first vacuum exhaust path when the valve element accommodating chamber is evacuated may return to the valve element accommodating chamber when the valve element accommodating chamber is opened to the atmosphere. In contrast, with the above configuration, the first vacuum exhaust path and the first air supply path are provided independently of each other, so that particles do not return to the valve element accommodating chamber when the valve element accommodating chamber is opened to the atmosphere, and particles in the valve element accommodating chamber can be more reliably discharged to the outside. [Effects of the Invention]

[0021] According to the present invention, particles flowing into the vacuum pre-chamber are reduced. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a schematic view showing a substrate processing apparatus according to a first embodiment of the present invention; [Figure 2] FIG. 2 is a schematic diagram showing a vacuum reserve chamber, its surroundings, and a piping structure in the embodiment. [Figure 3] FIG. 2 is a cross-sectional view showing a first auxiliary vacuum chamber and a first gate valve in the embodiment. [Figure 4] 4 is a vertical cross-sectional view of the first vacuum pre-chamber and the first gate valve in the embodiment, taken along line X1-X1 in FIG. 3. [Figure 5] 4 is a vertical cross-sectional view of the first vacuum pre-chamber and the first gate valve in the embodiment, taken along line Y1-Y1 in FIG. 3. [Figure 6] FIG. 10 is a schematic diagram showing a first vacuum pre-chamber, its surroundings, and a piping structure in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 7] FIG. 10 is a schematic view showing a first vacuum pre-chamber, its surroundings, and a piping structure in a substrate processing apparatus according to a third embodiment of the present invention. [Figure 8] FIG. 10 is a schematic diagram showing a modified example of the piping structure according to the third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0023] First Embodiment A substrate processing apparatus 1A according to a first embodiment of the present invention will be described. Note that Figures 1 to 8 are created for the purpose of understanding the present invention, and the shapes, length ratios, and scale ratios of the components in the figures do not necessarily match.

[0024] FIG. 1 is a schematic diagram showing a substrate processing apparatus 1A according to this embodiment. The substrate processing apparatus 1A is an ion implantation apparatus used in a flat panel display manufacturing process, and implants ions into a substrate S to be processed. In this embodiment, the substrate S is a rectangular glass substrate. The ion implantation apparatus is one example of a substrate processing apparatus according to the present invention. The substrate processing apparatus according to the present invention may be any apparatus that performs a predetermined process on a substrate in a processing chamber with a vacuum inside. The substrate S is not limited to a glass substrate, and the shape of the substrate S is not limited to a specific shape.

[0025] 1, the substrate processing apparatus 1A includes an ion source 2, a mass analysis magnet 3, and a processing chamber 4 whose interior is evacuated. In the ion source 2, plasma is generated from a raw material gas introduced into the ion source 2, and an ion beam IB is extracted from this plasma. The ion beam IB extracted from the ion source 2 is mass-separated in the mass analysis magnet 3 to remove unnecessary ions, and then introduced into the processing chamber 4.

[0026] In the processing chamber 4, the substrate S loaded into the processing chamber 4 is irradiated with the ion beam IB, thereby implanting predetermined ions into the substrate S.

[0027] More specifically, the substrate S is loaded into the processing chamber 4 with the surface to be processed, which is irradiated with the ion beam IB, approximately parallel to the horizontal direction. Then, the substrate S is first rotated by a transport mechanism (not shown) so that the surface to be processed becomes approximately parallel to the vertical direction.

[0028] Thereafter, the substrate S is transported by the transport mechanism so as to cross the ion beam IB. That is, in the processing chamber 4, the substrate S moves so as to cross the ion beam IB, whereby the surface to be processed of the substrate S is irradiated with the ion beam IB. The state in which the inside of the processing chamber 4 is evacuated means that the inside of the processing chamber 4 is maintained at a vacuum level at which a predetermined process can be performed. In this embodiment, it is sufficient that the inside of the processing chamber 4 is maintained at a vacuum level at which ions can be implanted into the substrate S.

[0029] FIG. 2 is a schematic diagram showing the vacuum pre-chamber 6 of the substrate processing apparatus 1A and its surroundings, as well as a piping structure 9A, which will be described later. 1 and 2, the substrate processing apparatus 1A includes a transfer chamber 5 adjacent to a processing chamber 4, and two auxiliary vacuum chambers 6 each connected to the transfer chamber 5. The interior of the transfer chamber 5 is kept at a vacuum.

[0030] The substrate processing apparatus 1A further includes two first gate valves 7, each disposed between the transfer chamber 5 and each vacuum auxiliary chamber 6. The substrate processing apparatus 1A also includes two second gate valves 8, each disposed adjacent to a side of each vacuum auxiliary chamber 6 that is different from the side on which the first gate valve 7 is disposed. The vacuum auxiliary chamber 6 is also called a load lock chamber, and its interior can be switched between atmosphere and vacuum.

[0031] Figure 2 shows a piping structure 9A connected to one vacuum reserve chamber 6 and one first gate valve 7, but in this embodiment, the piping structure 9A is also connected to the other vacuum reserve chamber 6 and the other first gate valve 7.

[0032] Fig. 3 is a horizontal cross-sectional view showing the vacuum reserve chamber 6 and the first gate valve 7. Fig. 4 is a vertical cross-sectional view taken along line X1-X1 in Fig. 3. Fig. 5 is a vertical cross-sectional view taken along line Y1-Y1 in Fig. 3. Figs. 3 and 5 show the first gate valve 7 in an open state, which will be described later. Fig. 4 shows the first gate valve 7 in a closed state, which will be described later.

[0033] 3 to 5 show the vacuum preparatory chamber 6 and the first gate valve 7, as well as a part of a piping structure 9A that allows gas to flow when the vacuum preparatory chamber 6 and the first gate valve 7 are evacuated and opened to the atmosphere.

[0034] The vacuum preparatory chamber 6 is formed into a generally rectangular parallelepiped shape by six side walls. As shown in Fig. 3, a first through-hole 6a and a second through-hole 6b are formed in two side walls of the vacuum preparatory chamber 6, respectively, and pass through the side walls to allow the substrate S to pass therethrough.

[0035] 3, the second gate valve 8 is disposed adjacent to the side surface of the vacuum pre-chamber 6 on which the second through-portion 6b is formed. The second gate valve 8 is configured so that the second through-portion 6b can be opened and closed by a valve element (not shown) that the second gate valve 8 has.

[0036] 3, the first gate valve 7 is configured with a valve element accommodating chamber 10 formed in a generally rectangular parallelepiped shape as a whole, and a valve element device 11. The valve element accommodating chamber 10 has a third through-hole 10a and a fourth through-hole 10b formed in the side walls of the valve element accommodating chamber 10 facing each other.

[0037] In this embodiment, the valve element accommodating chamber 10 is disposed adjacent to the side wall of the vacuum reserve chamber 6 where the first through-hole 6a is formed. Although not shown in FIGS. 3 to 5, the transfer chamber 5 is disposed adjacent to the side wall of the valve element accommodating chamber 10 where the fourth through-hole 10b is formed. The fourth through-hole 10b communicates with the internal space of the transfer chamber 5 and constitutes a first transfer path 12 through which the substrate S can pass.

[0038] In this embodiment, the first through-hole 6a formed in the vacuum reserve chamber 6 and the third through-hole 10a formed in the valve body accommodating chamber 10 constitute a second transport path 13 that connects the internal space of the vacuum reserve chamber 6 to the internal space of the valve body accommodating chamber 10 and allows the substrate S to pass through.

[0039] The first transport path 12 has a first opening 12a that is formed at one end of the first transport path 12 and communicates with the valve body accommodating chamber 10. In this embodiment, the first opening 12a is an opening of a fourth through-hole 10b that is formed on the inner wall surface of the valve body accommodating chamber 10.

[0040] The second transfer path 13 has a second opening 13a formed at one end of the second transfer path 13 and communicating with the valve body accommodating chamber 10, and a third opening 13b formed at the other end of the second transfer path 13 and communicating with the vacuum reserve chamber 6. In this embodiment, the second opening 13a is an opening of the third through portion 10a formed on the inner wall surface side of the valve body accommodating chamber 10 of the third through portion 10a. The third opening 13b is an opening of the first through portion 6a formed on the inner wall surface of the vacuum reserve chamber 6.

[0041] 4, the valve device 11 is composed of a first valve body 11a, a second valve body 11b, and a valve body drive unit 11c that operates the first valve body 11a and the second valve body 11b. The first valve body 11a and the second valve body 11b are both housed inside the valve body accommodating chamber 10 and operate inside the valve body accommodating chamber 10.

[0042] When the valve body drive unit 11c is driven, the first valve body 11a moves to open and close the first opening 12a, and when the valve body drive unit 11c is driven, the second valve body 11b moves to open and close the second opening 13a.

[0043] In this embodiment, the closed state of the first gate valve 7 refers to a state in which the first valve body 11a and the second valve body 11b close the first opening 12a and the second opening 13a, respectively. The open state of the first gate valve 7 refers to a state in which the first valve body 11a and the second valve body 11b do not close the first opening 12a and the second opening 13a, allowing the substrate S to pass through the valve body accommodating chamber 10.

[0044] 1, the arrows indicate the path along which the substrate S is loaded into one of the vacuum auxiliary chambers 6, undergoes ion implantation in the processing chamber 4, is returned to one of the vacuum auxiliary chambers 6, and then is unloaded to the outside of the substrate processing apparatus 1A. Note that the substrate processing apparatus 1A may be configured such that the substrate S is loaded into one of the vacuum auxiliary chambers 6, undergoes ion implantation, and is unloaded to the outside from the other vacuum auxiliary chamber 6.

[0045] 1, a substrate S to be processed in the substrate processing apparatus 1A is first loaded from outside the substrate processing apparatus 1A through the second gate valve 8 into one of the vacuum reserve chambers 6. As shown in Fig. 4, when the substrate S is loaded into the vacuum reserve chamber 6 from outside the substrate processing apparatus 1A, the first gate valve 7 is in a closed state.

[0046] When the substrate S is loaded into the vacuum preparatory chamber 6, the second gate valve 8 is closed and the vacuum preparatory chamber 6 is evacuated by the piping structure 9A.

[0047] When the first gate valve 7 is in the closed state, the first valve body 11a airtightly closes the first opening 12a, but the second valve body 11b does not necessarily airtightly close the second opening 13a. In this embodiment, the second valve body 11b is arranged to cover the entire second opening 13a, but it may be arranged to cover only a part of the second opening 13a.

[0048] When the substrate S is loaded into the vacuum preparatory chamber 6, the second gate valve 8 operates, and a valve element (not shown) of the second gate valve 8 airtightly closes the second through-hole 6b of the vacuum preparatory chamber 6. Then, the inside of the vacuum preparatory chamber 6 and the inside of the valve element accommodating chamber 10 are evacuated to a vacuum by the piping structure 9A.

[0049] Thereafter, the valve body driving unit 11c is driven, the first gate valve 7 is opened, and the substrate S is transported from the vacuum reserve chamber 6 through the first transport path 12 and the second transport path 13, via the transport chamber 5, to the processing chamber 4, as shown in FIG.

[0050] When the valve body drive unit 11c drives the first gate valve 7 from the closed state shown in Figure 4, the first valve body 11a moves back slightly in the opening direction of the first opening 12a, moves away from the first opening 12a, and then moves downward.

[0051] 5, the second valve body 11b moves downward after slightly retreating in the direction of the second opening 13a and moving away from the second opening 13a, thereby bringing the first gate valve 7 into the open state shown in FIG.

[0052] 1, after ion implantation into the substrate S in the processing chamber 4, the substrate S is transferred to the vacuum reserve chamber 6 via the transfer chamber 5 and through the first gate valve 7, which is in an open state. Once the substrate S has been loaded into the vacuum reserve chamber 6, the first gate valve 7 is closed again, and the inside of the vacuum reserve chamber 6 and the inside of the valve body accommodating chamber 10 are opened to the atmosphere by the piping structure 9A.

[0053] Thereafter, the second gate valve 8 is opened, and the substrate S passes through the second gate valve 8 and is unloaded to the outside of the substrate processing apparatus 1A.

[0054] When the valve element driver 11c is driven while the first gate valve 7 is in the open state, the first valve element 11a moves upward and then advances in the direction of the first opening 12a to airtightly close the first opening 12a. The second valve element 11b moves upward and then advances in the direction of the second opening 13a to airtightly close the second opening 13a. This causes the first gate valve 7 to return to the closed state.

[0055] 3 and 4, the valve element accommodating chamber 10 has two first vent holes 10c, 10c formed to penetrate a pair of opposing first side walls 10d, 10d of the valve element accommodating chamber 10. Both of the two first vent holes 10c, 10c are positioned lower than the first opening 12a and the second opening 13a.

[0056] 4, the first vent port 10c is positioned lower than the first valve body 11a and the second valve body 11b when the first gate valve 7 is in the closed state. In other words, the first vent port 10c is positioned lower than the first valve body 11a when the first opening 12a is closed and the second valve body 11b when the second opening 13a is closed.

[0057] In this embodiment, the two first vent holes 10c are formed in the pair of first side walls 10d, 10d, respectively, but the positions at which the first vent holes 10c are formed and the number of the first vent holes 10c are not limited to this. The first vent holes 10c may be formed in, for example, the second side wall 10e, which corresponds to the bottom wall of the valve body accommodating chamber 10 shown in Figures 4 and 5.

[0058] Furthermore, the first vent port 10c does not necessarily have to be positioned lower than the first opening 12a and the second opening 13a, and may be formed, for example, in the third side wall 10f that corresponds to the ceiling wall of the valve body accommodating chamber 10. The first vent port 10c may also be formed in the side wall of the valve body accommodating chamber 10 in which the fourth through-portion 10b is formed.

[0059] As shown in FIGS. 3 and 5, the vacuum pre-chamber 6 has a second vent 6c formed so as to penetrate the bottom wall of the vacuum pre-chamber 6.

[0060] As shown in FIG. 2, the piping structure 9A in this embodiment includes a first vacuum exhaust path 9a for evacuating the valve body accommodating chamber 10 and a second vacuum exhaust path 9b for evacuating the vacuum reserve chamber 6.

[0061] 3 and 5, the first vacuum exhaust path 9a is connected to the valve element accommodating chamber 10 at a first vent port 10c and communicates with the interior of the valve element accommodating chamber 10. The second vacuum exhaust path 9b is connected to the vacuum reserve chamber 6 at a second vent port 6c and communicates with the interior of the vacuum reserve chamber 6.

[0062] As shown in FIG. 2, the piping structure 9A is further provided with a vacuum pump 9c that is connected to the first vacuum exhaust path 9a and the second vacuum exhaust path 9b and that evacuates the valve body accommodating chamber 10 and the vacuum reserve chamber 6.

[0063] In this embodiment, the first vacuum exhaust path 9a refers to the path from the first vent port 10c to the vacuum pump 9c, and the second vacuum exhaust path 9b refers to the path from the second vent port 6c to the vacuum pump 9c.

[0064] In this embodiment, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b join midway through their respective paths and lead to a vacuum pump 9c. More specifically, as shown in Fig. 5, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b join at a first junction 9i located below the second vent port 6c. In other words, the region of the first vacuum exhaust path 9a from the first junction 9i to the vacuum pump 9c and the region of the second vacuum exhaust path 9b from the first junction 9i to the vacuum pump 9c are configured using the same piping members.

[0065] In the piping structure 9A, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b join at the first confluence 9i and are connected to the vacuum pump 9c, so that the vacuum reserve chamber 6 and the valve body accommodating chamber 10 can each be evacuated by one vacuum pump 9c.

[0066] 2, the piping structure 9A further includes a gas supply unit 9d that supplies gas such as dry air or nitrogen gas to open the vacuum pre-chamber 6 and the valve body accommodating chamber 10 to the atmosphere. The piping structure 9A further includes a first gas supply path 9e that sends the gas from the gas supply part 9d to the valve body accommodating chamber 10, and a second gas supply path 9f that sends the gas from the gas supply part 9d to the vacuum pre-chamber 6.

[0067] That is, the first gas supply passage 9e refers to a path leading from the gas supply unit 9d to the valve element accommodating chamber 10, and the gas supplied from the first gas supply passage 9e flows through the first gas supply passage 9e and then flows into the valve element accommodating chamber 10. This causes the valve element accommodating chamber 10 to be open to the atmosphere.

[0068] The second gas supply path 9f is a path leading from the gas supply unit 9d to the vacuum preparatory chamber 6, and the gas supplied from the first gas supply path 9e flows through the second gas supply path 9f and then into the vacuum preparatory chamber 6. This causes the vacuum preparatory chamber 6 to be open to the atmosphere.

[0069] 3 and 5, the first air supply path 9e in this embodiment merges with the first vacuum exhaust path 9a at a second junction 9g. That is, the first vacuum exhaust path 9a and the first air supply path 9e are configured by a common piping member in the region from the second junction 9g to the first vent port 10c.

[0070] Therefore, more specifically, the first gas supply path 9e refers to a path that runs from the gas supply part 9d through the second junction 9g to the first vent port 10c of the valve body accommodating chamber 10. The gas supplied from the gas supply part 9d passes through the second junction 9g and a partial region of the first vacuum exhaust path 9a in this order, and flows into the valve body accommodating chamber 10 through the first vent port 10c.

[0071] 3 and 4, the vacuum preparatory chamber 6 has a third vent port 6d formed in the bottom wall of the vacuum preparatory chamber 6, and the second air supply path 9f is connected to the third vent port 6d. More specifically, the second air supply path 9f refers to the path from the gas supply unit 9d to the third vent port 6d of the vacuum preparatory chamber 6, and the gas supplied from the gas supply unit 9d flows through the second air supply path 9f and into the vacuum preparatory chamber 6 from the third vent port 6d.

[0072] The second air supply path 9f may be configured to merge with the second vacuum exhaust path 9b midway. In this case, the gas for opening the vacuum preparatory chamber 6 to the atmosphere is introduced into the vacuum preparatory chamber 6 through the second vent port 6c, so the third vent port 6d does not necessarily have to be formed.

[0073] The substrate processing apparatus 1A is adjacent to the vacuum reserve chamber 6 and includes a valve element accommodating chamber 10 that constitutes a first gate valve 7. In this embodiment, the valve element accommodating chamber 10 is disposed between the vacuum reserve chamber 6 and the transfer chamber 5, but the location of the valve element accommodating chamber 10 is not limited thereto. The valve element accommodating chamber 10 may be disposed, for example, between the vacuum reserve chamber 6 and the processing chamber 4. In this case, the substrate processing apparatus 1A does not include the transfer chamber 5, and the substrate S is directly transferred from the vacuum reserve chamber 6 to the processing chamber 4 through the first gate valve 7.

[0074] The substrate processing apparatus 1A of this embodiment is provided with the first valve body 11a and the second valve body 11b in the valve body accommodating chamber 10, but the second valve body 11b is not necessarily provided. In this case, the valve body device 11 is composed of the first valve body 11a and the valve body driving unit 11c.

[0075] In addition, in this embodiment, the fourth through-hole 10b formed in the valve body accommodating chamber 10 constitutes the first transfer path 12, but the configuration of the first transfer path 12 is not limited to this. The second transfer path 13 may be constituted by, for example, the fourth through-hole 10b and a through-hole formed in the side wall of the transfer chamber 5.

[0076] In this embodiment, the first through-hole 6a formed in the vacuum preparatory chamber 6 and the third through-hole 10a formed in the valve element accommodating chamber 10 constitute the second transfer path 13, but the configuration of the second transfer path 13 is not limited to this. The vacuum preparatory chamber 6 and the valve element accommodating chamber 10 may be integrated, and the second transfer path 13 may be constituted by a through-hole formed in a partition wall that separates the internal space of the vacuum preparatory chamber 6 from the internal space of the valve element accommodating chamber 10.

[0077] Inside the valve element accommodating chamber 10, the valve element driving section 11c is driven, and the first valve element 11a and the second valve element 11b repeat predetermined movements, thereby generating particles.

[0078] In the substrate processing apparatus 1A of this embodiment, the valve element accommodating chamber 10 and the vacuum reserve chamber 6 are evacuated via the first vacuum exhaust path 9a and the second vacuum exhaust path 9b, respectively. If the valve element accommodating chamber 10 and the vacuum reserve chamber 6 were evacuated via only the second vacuum exhaust path 9b, the gas in the valve element accommodating chamber 10 would flow into the vacuum reserve chamber 6 via the second transfer path 13 and then be exhausted from the second vacuum exhaust path 9b. In this case, particles present in the valve element accommodating chamber 10 would ride on the gas flow from the valve element accommodating chamber 10 toward the vacuum reserve chamber 6 and move to the vacuum reserve chamber 6.

[0079] In contrast, in the substrate processing apparatus 1A, the valve body accommodating chamber 10 and the vacuum auxiliary chamber 6 are evacuated via the first vacuum exhaust path 9a and the second vacuum exhaust path 9b, respectively, and therefore, gas is prevented from flowing from the valve body accommodating chamber 10 to the vacuum auxiliary chamber 6. Therefore, particles that were present in the valve body accommodating chamber 10 are prevented from flowing into the vacuum auxiliary chamber 6, and the number of particles that flow into the vacuum auxiliary chamber 6 is reduced. As a result, processing defects of the substrate S in the processing chamber 4 are reduced.

[0080] In addition, at least some of the particles present in the valve body accommodating chamber 10 are carried by the gas flow generated by the evacuation of the valve body accommodating chamber 10 and are discharged to the outside of the valve body accommodating chamber 10 through the first evacuation path 9a.

[0081] In the substrate processing apparatus 1A of this embodiment, the first valve body 11a closes the first opening 12a, and the second valve body 11b closes the second opening 13a, whereby the first transfer path 12 and the second transfer path 13 are blocked by the first valve body 11a and the second valve body 11b, respectively. That is, the internal space of the valve body accommodating chamber 10 is isolated from the vacuum reserve chamber 6. Therefore, the vacuum reserve chamber 6 and the valve body accommodating chamber 10 are evacuated with the internal spaces of the valve body accommodating chamber 10 and the vacuum reserve chamber 6 isolated from each other, which further prevents particles in the valve body accommodating chamber 10 from flowing into the vacuum reserve chamber 6.

[0082] In the substrate processing apparatus 1A of this embodiment, the second valve body 11b closes the second opening 13a, thereby preventing particles from passing through the second transfer path 13 and flowing into the vacuum preparatory chamber 6. The second valve body 11b only needs to prevent at least some of the particles generated in the valve body accommodating chamber 10 from passing through the second transfer path 13 and flowing into the vacuum preparatory chamber 6. Therefore, it is not necessary for the second opening 13a to be airtightly closed, and it is sufficient for the second valve body 11b to be configured to cover part or all of the second opening 13a.

[0083] In the substrate processing apparatus 1A of this embodiment, a first vent port 10c communicating with the first vacuum exhaust path 9a is formed in the valve body accommodating chamber 10, and the first vent port 10c is positioned below the first opening 12a and the second opening 13a. More specifically, the first vent port 10c is positioned below the first valve body 11a when the first opening 12a is closed and below the second valve body 11b when the second opening 13a is closed.

[0084] While the valve element accommodating chamber 10 is being evacuated, the gas within the valve element accommodating chamber 10 flows downward and is discharged to the outside of the valve element accommodating chamber 10 through the first vent port 10c, which is located below the first opening 12a and the second opening 13a. Therefore, particles generated within the valve element accommodating chamber 10 are less likely to be stirred up within the valve element accommodating chamber 10, and particles are prevented from accumulating near the first opening 12a and the second opening 13a. As a result, particles are further prevented from flowing from the valve element accommodating chamber 10 into the vacuum reserve chamber 6.

[0085] Furthermore, in the substrate processing apparatus 1A of this embodiment, the vacuum reserve chamber 6 and the valve body accommodating chamber 10 are evacuated while the internal space of the valve body accommodating chamber 10 and the internal space of the vacuum reserve chamber 6 are isolated from each other. Therefore, the inflow of moisture-containing air from the valve body accommodating chamber 10 into the vacuum reserve chamber 6 during evacuation is also suppressed.

[0086] If the air flowing into the vacuum auxiliary chamber 6 contains moisture, the moisture in the air may condense due to adiabatic expansion during evacuation, resulting in tiny water droplets adhering to the substrate S. Water droplets adhering to the substrate S may cause processing defects of the substrate S. In contrast, in the substrate processing apparatus 1A of this embodiment, air is prevented from flowing into the vacuum auxiliary chamber 6 from the valve body accommodating chamber 10 during evacuation, and therefore water droplets are prevented from adhering to the substrate S.

[0087] That is, in the substrate processing apparatus 1A of this embodiment, adhesion of both particles and water droplets to the substrate S can be suppressed, and therefore processing defects of the substrate S in the processing chamber 4 can be reduced compared to the conventional method.

[0088] In this embodiment, the first gas supply passage 9e is connected to the first vacuum exhaust passage 9a at the second junction 9g. The gas supplied from the gas supply section 9d passes through the first gas supply passage 9e, the second junction 9g, and at least a part of the first vacuum exhaust passage 9a in this order before reaching the valve body accommodating chamber 10.

[0089] 3 and 5, the piping structure 9A in this embodiment further includes a dust collecting section 9h that captures particles that are discharged from the valve element accommodating chamber 10 and pass through the first vacuum exhaust path 9a as the valve element accommodating chamber 10 is evacuated. The dust collecting section 9h in this embodiment is configured with a dust collecting filter, but may have any configuration that can capture particles.

[0090] The dust collection unit 9h is disposed on the first vacuum exhaust path 9a midway from the second junction 9g to the vacuum pump 9c. Therefore, even in a configuration in which the first air supply path 9e merges with the first vacuum exhaust path 9a midway, as in this embodiment, the gas for opening the valve element accommodating chamber 10 to the atmosphere does not pass through the dust collection unit 9h when the valve element accommodating chamber 10 is opened to the atmosphere. This configuration prevents particles captured by the dust collection unit 9h from returning to the valve element accommodating chamber 10 when the valve element accommodating chamber 10 is opened to the atmosphere.

[0091] Second Embodiment Fig. 6 is a schematic diagram showing the vacuum pre-chamber 6, its surroundings, and a piping structure 9B in a substrate processing apparatus 1B according to a second embodiment of the present invention, and Fig. 7 is a schematic diagram showing the vacuum pre-chamber 6, its surroundings, and a piping structure 9C in a substrate processing apparatus 1C according to a third embodiment of the present invention.

[0092] Both the substrate processing apparatus 1B and the substrate processing apparatus 1C are ion implantation apparatuses, and are equipped with the same ion source 2, mass analysis magnet 3, processing chamber 4, and transfer chamber 5 as the substrate processing apparatus 1A in the first embodiment. That is, both the substrate processing apparatus 1B and the substrate processing apparatus 1C have the same configuration as the substrate processing apparatus 1A in the first embodiment, except for the configuration shown in Figures 6 and 7. In Figures 6 and 7, components having the same functions as the substrate processing apparatus 1A in the first embodiment are assigned the same reference numerals as in the substrate processing apparatus 1A, and descriptions thereof will be omitted.

[0093] Similar to the substrate processing apparatus 1A in the first embodiment, both the substrate processing apparatus 1B and the substrate processing apparatus 1C include two vacuum auxiliary chambers 6 arranged adjacent to the transfer chamber 5. Although only one of these vacuum auxiliary chambers 6 is shown in Figures 6 and 7, the surrounding configuration of the other vacuum auxiliary chamber 6 is also the same as the configuration shown in Figures 6 and 7.

[0094] 6, a substrate processing apparatus 1B according to the second embodiment of the present invention has two first vent holes 10c formed in the valve body accommodating chamber 10 and connected to a first vacuum exhaust path 9a. In the substrate processing apparatus 1B, the two first vent holes 10c are both formed in a second side wall 10e corresponding to the bottom wall of the valve body accommodating chamber 10 shown in FIG.

[0095] In the substrate processing apparatus 1B, the first ventilation port 10c is formed in the second side wall 10e, so that, compared to the substrate processing apparatus 1A in the first embodiment, when the valve body accommodating chamber 10 is opened to the atmosphere, particles that have been remaining below the valve body accommodating chamber 10 are more easily discharged from the first vacuum exhaust path 9a.

[0096] The substrate processing apparatus 1B also includes a piping structure 9B connected to the valve body accommodating chamber 10 and the vacuum auxiliary chamber 6. The piping structure 9B includes two vacuum pumps 9c, a first vacuum exhaust path 9a extending from each first vent port 10c of the valve body accommodating chamber 10 to one of the vacuum pumps 9c, and a second vacuum exhaust path 9b extending from the second vent port 6c of the vacuum auxiliary chamber 6 to the other vacuum pump 9c.

[0097] The first vacuum exhaust path 9a and the second vacuum exhaust path 9b in the piping structure 9B are provided independently without joining together along the way.

[0098] The substrate processing apparatus 1B first uses the vacuum pump 9c connected to the first vacuum exhaust path 9a to start evacuation of the valve body accommodating chamber 10 through the first vacuum exhaust path 9a. After a predetermined time has passed, the substrate processing apparatus 1B then uses the vacuum pump 9c connected to the second vacuum exhaust path 9b to start evacuation of the auxiliary vacuum chamber 6 through the second vacuum exhaust path 9b.

[0099] In this operation of the substrate processing apparatus 1B, after at least some of the particles inside the valve body accommodating chamber 10 are discharged from the first vacuum exhaust path 9a in association with the evacuation of the valve body accommodating chamber 10, evacuation of the vacuum auxiliary chamber 6 is started. Therefore, the number of particles flowing from the valve body accommodating chamber 10 into the vacuum auxiliary chamber 6 is further reduced.

[0100] In addition, the substrate processing apparatus 1B can start evacuation of the vacuum reserve chamber 6 using the vacuum pump 9c connected to the second vacuum exhaust path 9b, and then start evacuation of the valve body accommodating chamber 10 using the vacuum pump 9c connected to the first vacuum exhaust path 9a.

[0101] The piping structure 9B also has two gas supply sections 9d, a first air supply path 9e leading from one gas supply section 9d to each first air vent 10c of the valve body accommodating chamber 10, and a second air supply path 9f leading from the other gas supply section 9d to the second air vent 6c of the vacuum reserve chamber 6.

[0102] The first air supply path 9e in the second embodiment is connected to the first vacuum exhaust path 9a at the second junction 9g, and the area from the second junction 9g to each first vent 10c is formed by the same piping material as the first vacuum exhaust path 9a. Also, the second air supply path 9f in the second embodiment is connected to the second vacuum exhaust path 9b midway.

[0103] In the piping structure 9B of the second embodiment, a first air supply passage 9e and a second air supply passage 9f are provided independently without joining together along the way, and are connected to different gas supply units 9d.

[0104] Therefore, the substrate processing apparatus 1B can start opening the valve body accommodating chamber 10 to the atmosphere using the gas supply unit 9d connected to the first air supply path 9e, and then, after a delay, start opening the vacuum reserve chamber 6 to the atmosphere using the gas supply unit 9d connected to the second air supply path 9f.

[0105] In addition, the substrate processing apparatus 1B can start opening the vacuum reserve chamber 6 to the atmosphere using the gas supply unit 9d connected to the second air supply path 9f, and then start opening the valve body accommodating chamber 10 to the atmosphere using the gas supply unit 9d connected to the first air supply path 9e.

[0106] Also in the piping structure 9B of the second embodiment, a dust collection section 9h is arranged downstream of the second junction 9g between the first vacuum exhaust path 9a and the first air supply path 9e, i.e., midway along the path from the second junction 9g to the vacuum pump 9c.

[0107] <Third embodiment> 7, a substrate processing apparatus 1C according to the third embodiment of the present invention has one first vent port 10c formed in the valve body accommodating chamber 10 and connected to the first vacuum exhaust path 9a. In the substrate processing apparatus 1C, the first vent port 10c is formed in a third side wall 10f corresponding to the ceiling wall of the valve body accommodating chamber 10 shown in FIG.

[0108] The substrate processing apparatus 1C also includes a piping structure 9C connected to the valve body accommodating chamber 10 and the vacuum auxiliary chamber 6. The piping structure 9C includes two vacuum pumps 9c, a first vacuum exhaust path 9a extending from the first vent port 10c of the valve body accommodating chamber 10 to one of the vacuum pumps 9c, and a second vacuum exhaust path 9b extending from the second vent port 6c of the vacuum auxiliary chamber 6 to the other vacuum pump 9c.

[0109] The first vacuum exhaust path 9a and the second vacuum exhaust path 9b in the third embodiment are provided independently without merging along the way. Therefore, similar to the substrate processing apparatus 1B of the second embodiment, the substrate processing apparatus 1C can start evacuation of the valve body accommodating chamber 10 using the vacuum pump 9c connected to the first vacuum exhaust path 9a, and then, after that, start evacuation of the auxiliary vacuum chamber 6 using the vacuum pump 9c connected to the second vacuum exhaust path 9b.

[0110] In addition, the substrate processing apparatus 1C can start evacuation of the vacuum reserve chamber 6 using the vacuum pump 9c connected to the second vacuum exhaust path 9b, and then start evacuation of the valve body accommodating chamber 10 using the vacuum pump 9c connected to the first vacuum exhaust path 9a.

[0111] In the third embodiment, a sixth opening 10g is formed in a third side wall 10f corresponding to the ceiling wall of the valve body accommodating chamber 10 shown in Fig. 4. The piping structure 9C in the third embodiment has two gas supply parts 9d, a first gas supply path 9e leading from one gas supply part 9d to the sixth opening 10g of the valve body accommodating chamber 10, and a second gas supply path 9f leading from the other gas supply part 9d to the third vent port 6d of the vacuum reserve chamber 6.

[0112] In the piping structure 9C of the third embodiment, the first gas supply passage 9e and the second gas supply passage 9f are provided independently without merging along the way and are connected to different gas supply units 9d, respectively. Therefore, the substrate processing apparatus 1C can start opening the valve body accommodating chamber 10 to the atmosphere using the gas supply unit 9d connected to the first gas supply passage 9e, and then, after that, start opening the vacuum preparatory chamber 6 to the atmosphere using the gas supply unit 9d connected to the second gas supply passage 9f.

[0113] In addition, the substrate processing apparatus 1C can start opening the vacuum reserve chamber 6 to the atmosphere using the gas supply unit 9d connected to the second air supply path 9f, and then start opening the valve body accommodating chamber 10 to the atmosphere using the gas supply unit 9d connected to the first air supply path 9e.

[0114] In the piping structure 9C of the third embodiment, the first vacuum exhaust path 9a and the first air supply path 9e are provided independently without merging along the way, and therefore, in the third embodiment, it is not necessary to provide the dust collecting section 9h.

[0115] If the first vacuum exhaust path 9a and the first air supply path 9e are configured to share a portion of their respective areas, it is expected that particles that remain within the first vacuum exhaust path 9a without being discharged to the outside when the valve body accommodating chamber 10 is evacuated may return to the valve body accommodating chamber 10 when the valve body accommodating chamber 10 is opened to the atmosphere.

[0116] In contrast, in the substrate processing apparatus 1C, the first vacuum exhaust path 9a and the first air supply path 9e are provided independently of each other, so that the above-mentioned particles do not return to the valve body accommodating chamber 10 when the valve body accommodating chamber 10 is opened to the atmosphere, and the particles inside the valve body accommodating chamber 10 can be more reliably discharged.

[0117] In addition, in the piping structure 9C of the third embodiment, the second vacuum exhaust path 9b and the second air supply path 9f are provided independently of each other without merging along the way. That is, in the piping structure 9C, a path through which gas flows when the vacuum preparatory chamber 6 is evacuated and a path through which gas flows when the vacuum preparatory chamber 6 is opened to the atmosphere are formed independently of each other.

[0118] FIG. 8 is a schematic diagram showing a piping structure 9D which is a modified example of the piping structure 9C according to the third embodiment of the present invention. 8, in a piping structure 9D, a first vacuum exhaust path 9a and a second vacuum exhaust path 9b join together midway and are connected to a single vacuum pump 9c, and a first air supply path 9e and a second air supply path 9f join together midway and are connected to a single gas supply unit 9d.

[0119] That is, in the piping structure 9D, as in the first embodiment of the substrate processing apparatus 1A, one vacuum pump 9c and one gas supply unit 9d can be used to evacuate and open the valve body accommodating chamber 10 to the atmosphere, and to evacuate and open the vacuum reserve chamber 6 to the atmosphere.

[0120] In the piping structure 9D, the first vacuum exhaust path 9a and the first air supply path 9e are also configured to be independent of each other without merging along the way, which prevents particles remaining in the first vacuum exhaust path 9a from returning to the valve element accommodating chamber 10 when the valve element accommodating chamber 10 is opened to the atmosphere, thereby more reliably reducing the number of particles flowing from the valve element accommodating chamber 10 into the vacuum reserve chamber 6.

[0121] In the piping structure 9D, the first vacuum exhaust path 9a and the second vacuum exhaust path 9b are configured to be independent of each other without merging along the way. Therefore, in the piping structure 9D, similarly to the substrate processing apparatus 1B of the second embodiment, after starting evacuation of the valve body accommodating chamber 10 through the first vacuum exhaust path 9a, evacuation of the vacuum reserve chamber 6 through the second vacuum exhaust path 9b can be started.

[0122] That is, in the substrate processing apparatus 3C using the piping structure 9D, even when one vacuum pump 9c and one gas supply unit 9d are used, the first vacuum exhaust path 9a and the first gas supply path 9e can be configured to be independent of each other without merging along the way.

[0123] Furthermore, in the substrate processing apparatus 3C using the piping structure 9D, even when one vacuum pump 9c and one gas supply unit 9d are used, it becomes possible to start vacuum evacuation of the vacuum reserve chamber 6 through the second vacuum evacuation path 9b after starting vacuum evacuation of the valve body accommodating chamber 10 through the first vacuum evacuation path 9a.

[0124] Furthermore, the present invention is not limited to the above-described embodiment and modified examples, and it goes without saying that various modifications are possible without departing from the spirit of the present invention. [Explanation of symbols]

[0125] 1A Substrate processing equipment 4 Processing chamber 6. Vacuum spare room 9a First vacuum exhaust path 9b Second vacuum exhaust path 9c Vacuum pump 9d Gas supply section 9e First air supply 9h Dust collection section 10 Valve body housing 11a First valve body 11b Second valve body 12 First conveying path 12a First opening 13 Second conveying path 13a Second opening 13b Third Opening S board

Claims

1. A substrate processing apparatus that performs a predetermined process on a substrate in a processing chamber whose interior is kept vacuum, A vacuum spare chamber; a valve element accommodating chamber adjacent to the vacuum reserve chamber and accommodating a first valve element; a first transport path through which the substrate passes, the first transport path having a first opening communicating with the valve body accommodating chamber; a second transport path through which the substrate passes, the second transport path having a second opening communicating with the valve body accommodating chamber and a third opening communicating with the vacuum reserve chamber; a first vacuum exhaust path communicating with the valve element accommodating chamber and evacuating the valve element accommodating chamber; a second vacuum exhaust path communicating with the vacuum preparatory chamber and evacuating the vacuum preparatory chamber; Equipped with The substrate processing apparatus, wherein the first opening is opened and closed by the first valve body.

2. Further, a second valve body is accommodated in the valve body accommodating chamber, The substrate processing apparatus according to claim 1 , wherein the second opening is opened and closed by the second valve body.

3. a vent hole communicating with the first vacuum exhaust path is formed in the valve body accommodating chamber, The substrate processing apparatus according to claim 1 , wherein the vent hole is located below the first opening and the second opening.

4. a vacuum pump that evacuates the preliminary vacuum chamber and the valve body accommodating chamber, 3. The substrate processing apparatus according to claim 1, wherein the first vacuum exhaust path and the second vacuum exhaust path join together midway along their respective paths and communicate with the vacuum pump.

5. a first air supply passage through which gas flows to open the valve body accommodating chamber to the atmosphere; a gas supply unit connected to the first gas supply path and supplying the gas; the first gas supply passage joins the first vacuum exhaust passage at a joining portion provided midway from the gas supply portion to the valve body accommodating chamber, 3 . The substrate processing apparatus according to claim 1 , wherein the gas passes through the junction and a partial region of the first vacuum exhaust path in this order before reaching the valve body accommodating chamber.

6. a vacuum pump communicating with the first vacuum exhaust path; a dust collecting unit that captures particles passing through the first vacuum exhaust path, 6. The substrate processing apparatus according to claim 5, wherein the dust collecting section is disposed midway along the first vacuum exhaust path from the junction to the vacuum pump.

7. a first air supply passage through which gas flows to open the valve body accommodating chamber to the atmosphere; 3. The substrate processing apparatus according to claim 1, wherein the first vacuum exhaust path and the first air supply path are provided independently of each other.

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