Solid-state quantum sensor module and sensor device

Abstract

To achieve miniaturization of a sensor device and reduction of the influence of microwave noise on a photodetector.SOLUTION: The present disclosure provides a solid-state quantum sensor module comprising: a substrate that has a first main surface and a second main surface positioned on the opposite side from the first main surface; a solid-state element positioned on the first main surface side of the substrate and having a color center; a light guide plate positioned between the substrate and the solid-state element; a microwave field transmission antenna; a light source that is positioned on the first main surface side of the substrate and emits light containing a first wavelength in which the color center is excited from a ground state to an excited state; and a photodetector that is positioned on the first main surface side of the substrate and detects photoluminescence which contains a second wavelength and which is emitted from the solid-state element. The solid-state element overlaps with the microwave field transmission antenna when viewed along the normal direction of the first main surface of the substrate, and the photodetector does not overlap with the microwave field transmission antenna when viewed along the normal direction of the first main surface of the substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to solid-state quantum sensor modules and sensor devices. [Background technology]

[0002] In the crystal structure of diamond, a complex defect (NV center (Nitrogen Vacancy center)) is known, which consists of a pair of a nitrogen atom that replaces a carbon atom in the crystal lattice and a vacancy that exists in a position adjacent to that nitrogen atom. In addition to the NV center, complex defects called silicon-vacancy centers (SiV centers) and tin-vacancy centers (SnV centers) are known to exist in the crystal structure of diamond, and these complex defects, including the NV center, are called color centers.

[0003] The NV center is in a state where an electron is trapped (hereinafter referred to as "NV - In the NV state, a state called a spin triplet is formed and behaves as a single spin. - The single spin of the NV center changes in response to an external magnetic field, and this spin state can be measured at room temperature. Therefore, diamond containing the NV center can be used as a material for magnetic field sensor devices, electric field sensor devices, etc.

[0004] Patent document 1 discloses a sensor that includes an element having a color center to be excited, a pair of antennas for exciting a predetermined color center arranged on either side of the element, and a power supply that supplies a variable frequency high frequency current to the pair of antennas for exciting the color center.

[0005] Furthermore, Patent Document 2 discloses a magnetometer including a substrate, an electron spin defect layer including a plurality of lattice point defects arranged on the substrate, a microwave field transmitter, a light source, an optical resonator cavity including at least a portion of the electron spin defect layer and arranged to recirculate the light passing through the electron spin defect layer, a photodetector that detects photoluminescence emitted from the electron spin defect layer, and a magnet arranged adjacent to the electron spin defect layer. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2022-98572 [Patent Document 2] Special Publication No. 2022-550046 Summary of the Invention [Problem to be solved by the invention]

[0007] A sensor device using a solid-state element having a color center includes, for example, a diamond element having an NV center, an antenna for transmitting a microwave field, a light source that emits green light to excite the diamond element from the ground state to an excited state, and a photodetector that observes the intensity of red fluorescence. Conventional sensor devices often do not have the photodetector integrated on the substrate, and miniaturization is required. On the other hand, if the photodetector is integrated on the substrate to achieve miniaturization, it may be adversely affected by noise from the antenna for transmitting the microwave field.

[0008] The present disclosure has been made in consideration of the above circumstances, and has as its main object to provide a solid-state quantum sensor module that enables miniaturization of the sensor device and reduces the effect of microwave noise on the photodetector. [Means for solving the problem]

[0009] One embodiment of the present disclosure provides a solid-state quantum sensor module including: a substrate having a first main surface and a second main surface opposite to the first main surface; a solid-state element having a color center located on the first main surface side of the substrate; a light guide plate located between the substrate and the solid-state element; a microwave field transmitting antenna; a light source located on the first main surface side of the substrate and emitting light including a first wavelength that excites the color center from a ground state to an excited state; and a photodetector located on the first main surface side of the substrate and detecting photoluminescence including a second wavelength emitted from the solid-state element, wherein the solid-state element overlaps with the microwave field transmitting antenna when viewed along a normal direction to the first main surface of the substrate, and the photodetector does not overlap with the microwave field transmitting antenna when viewed along the normal direction to the first main surface of the substrate.

[0010] Another embodiment of the present disclosure provides a sensor device comprising the above-described solid-state quantum sensor module. [Effects of the Invention]

[0011] The present disclosure can provide a solid-state quantum sensor module that can reduce the size of a sensor device and reduce the effect of microwave noise on a photodetector. [Brief explanation of the drawings]

[0012] [Figure 1] 1A and 1B are a schematic top view and a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 2] FIG. 1 is a diagram showing a schematic structure of a diamond element having an NV center. [Figure 3] FIG. 1 is a diagram for explaining the principle of a diamond quantum sensor. [Figure 4] This is an optically detected magnetic resonance spectrum obtained with a diamond quantum sensor. [Figure 5] FIG. 2 is a schematic plan view illustrating a solid-state component according to the first embodiment of the present disclosure. [Figure 6]1 is a schematic plan view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 7] 1A and 1B are a schematic cross-sectional view and a schematic top view of a solid-state element illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 8] 1 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 9] 1A and 1B are a schematic cross-sectional view and a schematic top view of a solid-state element illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 10] 1 is a schematic top view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. FIG. [Figure 11] 1 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 12] 1 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 13] 1A and 1B are a schematic cross-sectional view, an exploded view, and a schematic top view of a light guide plate and a substrate illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 14] 1 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a first embodiment of the present disclosure. [Figure 15] 10A to 10C are a schematic top view, a schematic cross-sectional view, and an exploded cross-sectional view illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. [Figure 16] 10A and 10B are a schematic cross-sectional view and a schematic top view of a solid-state element illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. [Figure 17] FIG. 10 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. [Figure 18] 10A and 10B are a schematic cross-sectional view and a schematic top view of a solid-state element illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. [Figure 19] FIG. 10 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. [Figure 20] FIG. 10 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a second embodiment of the present disclosure. [Figure 21] 10A and 10B are a schematic top view and a schematic cross-sectional view showing an example of a sensor element structure used in a third embodiment of the present disclosure. [Figure 22] FIG. 10 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a third embodiment of the present disclosure. [Figure 23] FIG. 10 is a schematic cross-sectional view showing an example of a sensor element structure according to a third embodiment of the present disclosure. [Figure 24] FIG. 10 is a schematic cross-sectional view showing an example of a sensor element structure according to a third embodiment of the present disclosure. [Figure 25] FIG. 10 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a third embodiment of the present disclosure. [Figure 26] FIG. 10 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a third embodiment of the present disclosure. [Figure 27] 10A and 10B are a schematic cross-sectional view, an exploded cross-sectional view, and a schematic top view of a light guide plate and a substrate illustrating a solid-state quantum sensor module according to a third embodiment of the present disclosure. [Figure 28] 10A and 10B are a schematic cross-sectional view and an exploded cross-sectional view illustrating a solid-state quantum sensor module according to a third embodiment of the present disclosure. [Figure 29] FIG. 10 is a schematic cross-sectional view illustrating a solid-state quantum sensor module according to a third embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0013] Embodiments of the present disclosure will be described below with reference to the drawings and the like. However, the present disclosure can be implemented in many different forms, and should not be construed as being limited to the description of the embodiments exemplified below. Furthermore, to clarify the explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual form, but these are merely examples and are not intended to limit the interpretation of the present disclosure. Furthermore, in this specification and each drawing, elements similar to those previously described with reference to the preceding drawings will be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0014] In this specification, when describing a mode in which another component is placed on a certain component, the terms "above" or "below" are used, unless otherwise specified, to include both a case in which another component is placed directly above or below a certain component so as to be in contact with the component, and a case in which another component is placed above or below a certain component with another component interposed therebetween. Also, in this specification, when describing a mode in which another component is placed on the surface of a certain component, the terms "on the surface side" or "on the surface" are used, unless otherwise specified, to include both a case in which another component is placed directly above or below a certain component so as to be in contact with the component, and a case in which another component is placed above or below a certain component with another component interposed therebetween.

[0015] A. Solid-state quantum sensor module The inventors of the present application have found that it is possible to miniaturize a solid-state quantum sensor module by integrating a light source and a photodetector on the first main surface side of a substrate.

[0016] Fig. 1(a) is a schematic top view showing an example of a solid-state quantum sensor module according to a first embodiment of the present disclosure, and Fig. 1(b) is a schematic cross-sectional view taken along line AA in Fig. 1(a). Note that the pattern shape of the microwave field transmitting antenna is omitted in Fig. 1(b). Fig. 15(a) is a schematic top view showing an example of a solid-state quantum sensor module according to a second embodiment of the present disclosure, and Fig. 15(b) is a schematic cross-sectional view taken along line AA in Fig. 15(a), and Fig. 15(c) is an exploded cross-sectional view of Fig. 15(b).

[0017] As shown in Figures 1(a), 1(b), and 15(a) to 15(c), the solid-state quantum sensor modules 1A and 1B of the present disclosure can be miniaturized because the light source 5 and the photodetector 7 can be integrated on the first main surface S1 of the substrate 2. Furthermore, according to the present disclosure, the normal direction D of the first main surface S1 of the substrate 2 N By including the light guide plate 6 located between the substrate 2 and the solid-state component 4, the light (excitation light) having the first wavelength emitted from the light source 5 can be efficiently guided to the solid-state component 4. According to the solid-state quantum sensor module of the present disclosure, the direction of the normal D of the first main surface S1 of the substrate 2 is N When viewed along the normal direction D of the first main surface S1 of the substrate 2, the photodetector 7 does not overlap with the microwave field transmitting antenna 3, thereby reducing the influence of microwave noise on the photodetector 7. N When viewed along the normal direction D of the first main surface S1 of the substrate 2, the substrate 2 is positioned so as to overlap with the microwave field transmitting antenna 3, so that microwaves can be efficiently irradiated from the microwave field transmitting antenna to the color center. N is simply the normal direction D N It is also called.

[0018] The solid-state quantum sensor module of the present disclosure will be described in detail below, divided into a first embodiment and a second embodiment depending on the position of the light source. Also, a solid-state quantum sensor module using a sensor element structure having a solid-state element will be described as a third embodiment.

[0019] A-1. First embodiment The solid-state quantum sensor module 1A of the first embodiment shown in FIGS. 1(a) and 1(b) includes a substrate 2 having a first main surface S1 and a second main surface S2 located on the opposite side of the first main surface S1, a solid-state element 4 having a color center located on the first main surface S1 side of the substrate 2, and a solid-state element 4 arranged in a direction parallel to a normal D NThe solid-state element 4 is provided with a light guide plate 6 located between the substrate 2 and the solid-state element 4, a microwave field transmitting antenna 3, a light source 5 located on the first main surface S1 side of the substrate 2 and emitting light including a first wavelength that excites the color center from the ground state to an excited state, and a photodetector 7 located on the first main surface S1 side of the substrate 2 and detecting photoluminescence including a second wavelength emitted from the solid-state element 4. The solid-state element 4 is also provided with a light guide plate 6 located between the substrate 2 and the solid-state element 4, a microwave field transmitting antenna 3, a light source 5 located on the first main surface S1 side of the substrate 2 and emitting light including a first wavelength that excites the color center from the ground state to an excited state, and a photodetector 7 located on the first main surface S1 side of the substrate 2 and detecting photoluminescence including a second wavelength that is emitted from the solid-state element 4. N When viewed along the normal direction D of the first main surface S1 of the substrate 2, the photodetector 7 is positioned so as to overlap with the microwave field transmitting antenna 3. N When viewed along the normal direction D of the first main surface S1 of the substrate 2, the light source 5 is positioned so as not to overlap with the microwave field transmitting antenna 3. N When viewed along the line, it is located at a position that does not overlap with the microwave field transmitting antenna 3.

[0020] In the solid-state quantum sensor module 1A of this embodiment, the light source 5 is N When viewed along the axis, the position of the light source 5 does not overlap with the microwave field transmitting antenna 3, thereby reducing microwave noise to the light source 5 and providing a solid-state quantum sensor module capable of highly accurate sensing.

[0021] In the solid-state quantum sensor module 1A of this embodiment, the microwave field transmitting antenna 3 is N In the area where the light guide plate 6 overlaps with the light guide plate 6 when viewed along the normal direction D N In this case, the microwave field transmitting antenna 3, the light guide plate 6, and the solid-state component 4 are arranged in this order from the substrate 2 side. With such a layered structure, light containing the first wavelength can be introduced from the light guide plate 6 to the solid-state component 4 more efficiently. Furthermore, by placing the microwave field transmitting antenna 3 adjacent to the substrate 2, connection with the penetrating through electrode layer 14 can be simplified. Each component of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0022] 1. Solid-state devices 1(a) and 1(b), the solid-state element 4 having the color center in this embodiment is located on the first main surface S1 side of the substrate 2. Furthermore, in the normal direction D of the first main surface S1 of the substrate 2, N When viewed along the normal direction D, the solid-state element 4 is positioned so as to overlap with the microwave field transmitting antenna 3. N The phrase "the solid-state element 4 overlaps with the microwave field transmitting antenna 3 when viewed along the normal direction D of the first main surface S1 of the substrate 2" means that N When viewed along the normal direction D, at least a part of the solid-state element 4 overlaps with the microwave field transmitting antenna 3. N , the solid-state element 4 is located on the surface of the light guide plate 6 opposite to the substrate 2 side. N , it is preferable that the microwave field transmitting antenna 3 is located on the surface opposite to the substrate 2 side.

[0023] As shown in Figure 1(a) and Figure 1(b), the normal direction D N When viewed along the line , it is preferable that at least a portion of the solid-state component 4 overlaps with the light guide plate 6 .

[0024] A solid-state device having a color center is a device in which electrons or holes are trapped in point defects in a solid ionic crystal. Materials used for solid-state devices having a color center include, for example, diamond and silicon carbide (SiC), and among these, diamond is preferred because of its excellent spin coherence properties at room temperature. Examples of color centers include color centers in diamond and color centers in silicon carbide (SiC). Examples of color centers in diamond include nitrogen-vacancy centers (NV centers) and silicon-vacancy centers, with NV centers being preferred.

[0025] The operating mechanism of a magnetic sensor using a diamond crystal as the solid-state element and an NV center as the color center will be described in detail below. Figure 2 is a diagram showing the structure of a diamond element having an NV center. As shown in Figure 2, the NV center is a complex impurity defect consisting of a pair of nitrogen (Nitrogen) that has entered a substitutional position of carbon in the diamond lattice and a vacancy (Vacancy) where a carbon atom adjacent to this nitrogen is missing. This NV center is in a neutral charge state NV 0 It captures one electron from the atom to form a -1 NV - Then, the magnetic quantum number m S = -1, 0, +1 electron spin triplet states are formed.

[0026] Figure 3 shows the NV - This is a diagram to explain the principle of a diamond quantum sensor that has a diamond element having a structure and measures magnetic field strength etc. by the principle of optically detected magnetic resonance. When green light GL (wavelength approximately 532 nm) is irradiated onto the diamond element without active microwave irradiation, m s Electrons excited from the m = 0 state emit red fluorescence RL with a longer wavelength (about 637 nm), and return to the original m s =0 (path A).

[0027] On the other hand, when this crystal is irradiated with microwaves around 2.87 GHz, electrons are converted from the m = 0 state to m s m = ±1. s When the above green light is irradiated to the state of m = ±1, some of the electrons emit red fluorescence (path B), while some of the electrons undergo non-radiative transition to m s = 0 (path C), it does not contribute to light emission. Therefore, when the electron of the NV center is excited from the level where electron spin resonance occurs, the brightness of the red fluorescent RL decreases.

[0028] m s The state of =±1 is degenerate in the absence of a magnetic field, but in the presence of a magnetic field, Zeeman splitting occurs and the electron is split into two levels. s =0 to m sBy sweeping the microwave that excites the NV = ±1 state, it is possible to accurately measure the resonance level by electron spin resonance (ESR). For example, - When a magnetic field is applied to the red fluorescent RL, the optically detected magnetic resonance spectrum has two points of brightness decrease, as shown in Figure 4(a). s As the ±1 band widens, the energy difference between the two peaks (here, the frequency difference Δf = f2 - f1) also widens (Figure 4(b)). In this way, the frequency split Δf (= f2 - f1) of the microwave MW corresponding to the two brightness drop points increases in proportion to the external magnetic field. Therefore, the external magnetic field can be measured from the red emission intensity.

[0029] 5(a), 5(b), 5(c), and 5(d) are schematic plan views showing an example of a solid-state element in this embodiment, together with a microwave field transmitting antenna 3. As shown in FIGS. 5(a), 5(b), and 5(c), the solid-state element 4 preferably has a light-emitting region 41 and a connection region 42 that is a region between the light-emitting region 41 and the photodetector. Also, as shown in FIG. 5(d), the solid-state element 4 may have another region 43 other than the light-emitting region 41 and the connection region 42. The light-emitting region 41 is oriented in the normal direction D N When viewed along the line, this is a region that overlaps with the region of the microwave field transmitting antenna 3. Note that the region of the microwave field transmitting antenna 3 refers to a region that includes a conductive pattern, for example, in the case where the antenna has a conductive pattern such as a loop antenna formed in a planar shape as described below.

[0030] The solid-state component of this embodiment may be flat, as shown in FIG. 5(a). In this case, it is preferable that the solid-state component 4 has a flat shape extending in the direction D1 from the light source 5 toward the photodetector 7. Furthermore, as shown in FIGS. 5(b), 5(c), and 5(d), the solid-state component 4 preferably has one or more line patterns 4p extending in the direction D1 from the light source 5 toward the photodetector 7. In particular, the solid-state component 4 preferably has a plurality of line patterns 4p. Hereinafter, the structure of each line pattern 4p of the solid-state component 4 in this embodiment will also be referred to as a "first photonic cavity structure." In particular, it is preferable that the light-emitting region 41 of the solid-state component has the first photonic cavity structure. By having such a first photonic cavity structure, photoluminescence containing the second wavelength can be efficiently supplied to the photodetector side due to the refractive index difference with air. Furthermore, by combining the solid-state component 4 having the first photonic cavity structure with the light guide plate 6, light can be efficiently introduced and extracted in the horizontal direction, and the light can be efficiently introduced and extracted in the normal direction D. N A light source 5 and a photodetector 7 can be arranged at a distance from the microwave field transmitting antenna 3 when viewed along the axis.

[0031] As shown in FIGS. 5(b), 5(c) and 5(d), the solid-state component 4 preferably has a pattern group C made up of a plurality of line patterns 4p.

[0032] 6(a) and 6(b) are schematic plan views showing an example of a solid-state quantum sensor module according to this embodiment. As shown in Fig. 6(a), the solid-state component 4 according to this embodiment may have a plurality of pattern groups C. In this case, as shown in Fig. 6(a), the solid-state component 4 may have a plurality of connection regions 42 that connect to each of the pattern groups C, and the solid-state quantum sensor module 1A may have a plurality of photodetectors 7.

[0033] Each pattern group C shown in Fig. 6(a) has multiple line patterns 4p, so if defects occur during the manufacturing process, it may be difficult to collect photoluminescence. As shown in Fig. 6(b), the solid-state component 4 in this embodiment may be divided into multiple independent pattern groups C by bus cavities B. By having such bus cavities B in the solid-state component 4, it is possible to reduce the collection loss of photoluminescence due to defects in the line patterns.

[0034] The one or more line patterns (first photonic cavity structures) and bus cavities can be formed by a conventionally known method, for example, by etching a flat solid-state element (diamond).

[0035] FIG. 7(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to this embodiment. FIG. 7(b) is a schematic top view of the solid-state element 4 shown in FIG. 7(a). As shown in FIGS. 7(a) and 7(b), in the solid-state element 4 according to this embodiment, each line pattern 4p preferably has a photonics mirror structure. The photonics mirror structure can amplify the intensity of photoluminescence containing the second wavelength, enabling highly sensitive sensing. The photonics mirror structure is not particularly limited as long as it is a structure in which multiple dielectrics or the like are periodically arranged to control the transmission and reflection of light, confine light, and amplify it by resonating. Examples of such a structure are disclosed in, for example, Handbook of Quantum Interactions of Light and Matter (NTS Corporation) and Introduction to Photonic Crystals (Morikita Publishing Co., Ltd.).

[0036] As a specific example, as shown in FIG. 7(b), a void group O1 consisting of n1 periodically positioned voids (n1 is an integer greater than or equal to 5) is preferably arranged on the light source 5 side of the solid-state component 4 (line pattern 4p) in the D1 direction, and a void group O2 consisting of n2 periodically positioned voids (n2 is an integer greater than or equal to 2 and less than n1) is preferably arranged on the photodetector 7 side of the line pattern 4p of the solid-state component 4 in the D1 direction. By arranging the voids in this manner, the void group O1 on the light source side and the void group O2 on the photodetector side reflect light containing the second wavelength, and the light can be resonated and amplified between the void groups d. Furthermore, by making the number of voids n2 in the void group on the photodetector side of the solid-state component smaller than the number of voids n1 in the void group on the light source side of the solid-state component, the void group on the photodetector side functions like a semi-transparent mirror, making it easier for light to travel toward the photodetector. The void groups O1 and O2 are preferably formed so that at least the void group interval d is located in the light-emitting region 41. The void group O1 and the void group O2 may be formed in the light-emitting region 41. The void group O2 may be formed in the connection region 42. The void group O1 may be formed in a region other than the light-emitting region 41 and the connection region 42 (region 43 in FIG. 5(d)).

[0037] The optical distance d between such gap groups is preferably, for example, n3 times (n3 is an integer) the second wavelength λ2 / 2. This is because resonance of light including the second wavelength is likely to occur. The optical distance is the value obtained by multiplying the physical distance by the refractive index of the medium.

[0038] The distance between the gaps in the gap group and the gap size are appropriately set to an optical distance equal to or less than half the wavelength (second wavelength λ2 / 2) of the light to be controlled by simulation or the like based on the controlled light wavelength (second wavelength λ2) and the physical properties such as the dielectric constant and transmittance of the photonic cavity material (i.e., the solid-state element material).

[0039] The voids can be formed, for example, by stacking a metal layer on a solid-state element (e.g., diamond), patterning the metal layer, and using the resulting metal pattern as a mask to perform dry etching using oxygen plasma or the like. The metal pattern stacked as a mask may be removed by wet etching or the like after the voids are formed.

[0040] 8 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to this embodiment. As shown in FIG. 8, it is preferable that the end 4E of the solid-state element 4 on the photodetector side has a curvature. Here, "the end 4E on the photodetector side has a curvature" means that the end 4E on the photodetector side is curved in a convex shape toward the photodetector side in a direction perpendicular to the normal direction. This is because the light emitted from the solid-state element can be made into convergent light by the convex lens, making it easier to introduce light containing the second wavelength into the photodetector 7.

[0041] FIG. 9(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to this embodiment. FIG. 9(b) is a schematic top view of the solid-state device shown in FIG. 9(a). As shown in FIG. 9, the solid-state device 4 according to this embodiment preferably has a plurality of color centers (NV in FIG. 9) arranged at a predetermined interval along the direction D1 toward the photodetector. It is more preferable that each line pattern 4p of the solid-state device 4 has a plurality of color centers (NV) arranged at a predetermined interval. By having a plurality of color centers arranged at a predetermined interval, it is possible to suppress mutual attenuation of light containing the second wavelength and to amplify the amount of light emitted. The predetermined interval (optical distance) is preferably n4 times the second wavelength λ2. The value n4 is preferably 0.6 to 1.4, and more preferably 0.8 to 1.2. The plurality of color centers arranged at a predetermined interval are preferably arranged in the light-emitting region 41. The plurality of color centers arranged at a predetermined interval may also be arranged in the connection region 42. As shown in FIG. 9, it is preferable that the plurality of color centers positioned side by side at predetermined intervals are disposed between the above-mentioned group of voids O1 and group of voids O2.

[0042] As a method for arranging color centers at a predetermined interval, conventionally known methods can be used. In order to artificially form NV centers in diamond, for example, nitrogen atoms and vacancies are simultaneously introduced into diamond. To introduce nitrogen atoms, a method using ion implantation is used after preparing diamond. In ion implantation, nitrogen atoms can be introduced into diamond at desired positions and in desired amounts by improving the ion beam focusing technology and the controllability of ion amount. In ion implantation, ions accelerated to tens to thousands of kV are usually irradiated, so vacancies are also introduced at the same time as nitrogen. Alternatively, a method is used in which nitrogen is introduced during diamond synthesis, and then electron beams are irradiated under control to diamond that has already been nitrogen-doped.

[0043] In this embodiment, the thickness of the solid-state component is not particularly limited and may be 50 nm or more, 100 nm or more, or 150 nm or more, while the thickness may be, for example, 1000 μm or less, 100 μm or less, or 1 μm or less.

[0044] 2. Antenna for transmitting microwave fields The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to apply a microwave field to the solid-state element. As shown in FIG. 1(b), N When viewed along the normal direction D, the microwave field transmitting antenna 3 is positioned so as to overlap at least a part of the solid-state element 4. Furthermore, the microwave field transmitting antenna 3 is positioned so as to overlap at least a part of the solid-state element 4 when viewed along the normal direction D. NIn this embodiment, the microwave field transmission antenna 3 is preferably located closer to the substrate 2 than the solid-state element 4. In this embodiment, the microwave field transmission antenna 3 may be located on the surface of the substrate 2, may be located within the substrate 2, or may be located between the substrate 2 and the light guide plate 6. The microwave field transmission antenna 3 includes, for example, a metal layer. The material of the metal layer is not particularly limited as long as it has excellent conductivity, and may be, for example, a metal such as gold, silver, copper, iron, nickel, or chromium, or an alloy. The metal layer may have a patterned shape. Examples of the shape of the metal layer of the microwave field transmission antenna 3 in this embodiment include a loop shape, a patch shape called a microstrip antenna, and a stripe shape. Furthermore, a transmission antenna, which will be described in detail in the second embodiment, may also be used as the microwave field transmission antenna in this embodiment.

[0045] In this embodiment, it is preferable to have a metal layer shape that transmits microwaves primarily in a vertical direction so that the microwaves are not directly exposed to the photodetector and light source, such as a planar loop antenna or a microstrip antenna.

[0046] The solid-state quantum sensor module in this embodiment may include a microwave field control circuit that provides a microwave source signal to the microwave field transmitting antenna. The microwave field control circuit may be electrically connected to the microwave field transmitting antenna. The microwave source signal may have a microwave frequency of, for example, about 2 GHz or more and about 4 GHz or less.

[0047] 3.Light source The solid-state quantum sensor module of this embodiment is provided with a light source located on the first main surface side of the substrate, which emits light having a first wavelength that excites color centers in the solid-state element from the ground state to an excited state. As shown in Figures 1(a) and 1(b), in this embodiment, the light source 5 is located at a position where it can emit light having the first wavelength in the in-plane direction of the light guide plate 6, and is also oriented in the normal direction D N When viewed along the line, it is arranged at a position where it does not overlap with the microwave field transmitting antenna 3.

[0048] The light emitted from the light source includes a first wavelength that excites one or more color centers in the solid-state device from a ground state to an excited state. The first wavelength is different from a second wavelength emitted by the color centers, as described below. The first wavelength may be, for example, about 532 nm, to excite the color centers in the solid-state device.

[0049] Examples of the light source include a light emitting diode and a laser.

[0050] 4.Light guide plate The solid-state quantum sensor module of this embodiment includes a light guide plate located between the substrate and the solid-state element, which guides light having a first wavelength emitted from the light source to the solid-state element. In this embodiment, the light guide plate may be an optical waveguide that propagates light in the surface direction of the light guide plate, or may be a diffusion plate that diffuses light in the vertical direction.

[0051] (1) Optical waveguide 1(a) and 1(b), in this embodiment, the light guide plate 6 is preferably an optical waveguide 60 having a core layer 61 and a clad layer 62 having a refractive index different from that of the core layer 61. The clad layer may have a first clad layer having a recess for the core layer, and a second clad layer that seals the core layer disposed in the recess in the first clad layer. The refractive index of the clad layer is preferably lower than that of the core layer, and light that enters the core layer is transmitted inward while being totally reflected at the boundary with the clad layer.

[0052] Both the core layer and the cladding layer preferably contain a cured product of a curable resin composition that is cured by heat or light. Examples of cured products of curable resin compositions include cured products of ionizing radiation-curable resin compositions and cured products of heat-curable resin compositions. Examples of ionizing radiation-curable resin compositions include ultraviolet-curable resin compositions and electron beam-curable resin compositions. Examples of materials for ultraviolet-curable resin compositions include polymerizable oligomers or monomers having an acryloyl group, such as urethane acrylate, oligoester acrylate, trimethylolpropane triacrylate, neopentyl glycol diacrylate, epoxy acrylate, polyester acrylate, polyether acrylate, and melamine acrylate, as well as blends of these oligomers or monomers with monofunctional or polyfunctional monomers containing a polymerizable vinyl group, such as acrylic acid, acrylamide, acrylonitrile, and styrene, to which a photopolymerization initiator, sensitizer, or desired additive has been added.

[0053] The optical waveguide may include a resin substrate that supports the core layer and the clad layer. The resin substrate film is formed, for example, from polyethylene terephthalate (PET) or polycarbonate (PC). The resin substrate is necessary during the manufacturing process of the optical waveguide, but may be removed when the waveguide is actually used.

[0054] Fig. 10 is a schematic top view of the solid-state quantum sensor module of this embodiment. The solid-state element 4 is omitted in Fig. 10. As shown in Fig. 10, the core layer 61 preferably has a branched structure in which a linear main core portion 61a is branched into two or more branch core portions (61b, 61c, 61d, 61e, 61f) at a branch portion along the way. The branch core portions are preferably arranged at predetermined intervals, and the cladding layer 62 preferably encases the five arranged branch core portions together.

[0055] The optical waveguide preferably has the branched core portion in a region overlapping with the light-emitting region of the solid-state component, because this allows light of the first wavelength to be efficiently introduced into the solid-state component.

[0056] (2) Diffuser The diffusion plate is not particularly limited as long as it is one that is generally used as a diffusion plate, but for example, those made from methacrylate styrene copolymer, methacrylate methyl styrene copolymer, acrylonitrile styrene copolymer, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, etc. can be used.

[0057] The diffusion plate used in the present invention may also contain particles. Examples include inorganic particles such as silica and alumina, fluororesin particles such as acrylic resin, styrene resin, polytetrafluoroethylene and polyfluorovinylidene, and silicone resin particles. These particles may be used alone or in combination of two or more. From the viewpoint of scattering properties, the average particle size of the particles is preferably in the range of 0.8 μm to 10 μm. The particle content may be adjusted as appropriate.

[0058] (3) Other The light guide plate in this embodiment may have both the functions of the optical waveguide and the diffusion plate. N When viewed along the line, light including the first wavelength is propagated by the optical waveguide from the light source to the end of the light-emitting region of the solid-state element on the light source side, and a diffuser plate is used in the region overlapping with the light-emitting region, making it easier to introduce light into the solid-state element located above.

[0059] 5. Photodetector The solid-state quantum sensor module of this embodiment includes a photodetector located on the first main surface of the substrate for detecting photoluminescence having a second wavelength emitted from the solid-state element, which may include one or more wavelengths of light corresponding to the emission wavelength of the color center (e.g., a wavelength of about 637 nm).

[0060] 1(b), the photodetector 7 is preferably disposed so that the detection surface of the photodetector 7 faces the end 4E of the solid-state component 4. Alternatively, the photodetector 7 and the solid-state component 4 may be in direct contact with each other.

[0061] 6. Substrate The solid-state quantum sensor module of this embodiment includes a substrate, which is a member that supports components such as the light source, photodetector, solid-state device, light guide plate, and microwave field transmitting antenna.

[0062] The material of the substrate may be, for example, an organic material, an inorganic material, or a composite material containing an organic material and an inorganic material. In this embodiment, the substrate is preferably made of a material containing an inorganic material, and is particularly preferably made of an inorganic material.

[0063] Examples of the substrate material include, for example, an inorganic material substrate, such as a glass substrate, a ceramic substrate, a resin substrate, a silicon substrate, a quartz substrate, and a sapphire substrate. In this embodiment, the substrate is preferably a glass substrate or a silicon substrate. When the substrate is a glass substrate, examples of the glass used include soda lime glass, alkali-free glass, and quartz glass. When the substrate is a resin substrate, examples of the resin used include polyimide. When the substrate is a composite material substrate, examples of the resin used include a glass epoxy substrate.

[0064] As shown in FIG. 1(b), the substrate 2 is N The substrate 2 may have a through hole penetrating the substrate 2. A through electrode layer 14 is disposed on the inner wall of the through hole. A conductive layer 15 may be provided on the second main surface S2 side of the substrate 2. For example, the substrate 2 may be configured such that the conductive layer 15 is electrically connected to the light source 5, the photodetector 7, and the microwave field transmitting antenna 3 by the through electrode layer 14 formed in the through hole of the substrate 2.

[0065] The materials for the through electrode layer and the conductive layer are not particularly limited as long as they are conductive, and examples thereof include metal materials such as simple metals, alloys, and metal compounds. Examples of metal elements contained in the metal materials include chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, arsenic, ruthenium, rhodium, palladium, silver, cadmium, indium, tin, antimony, osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, molybdenum, titanium, tungsten, tantalum, and aluminum. Among these, simple metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, or alloys containing at least one of these metal elements, are preferred.

[0066] 7.Other (1) Reflective layer 11(a) and 11(b) are schematic cross-sectional views illustrating an example of a solid-state quantum sensor module according to this embodiment. As shown in FIG. 11(a), the solid-state quantum sensor module 1A according to this embodiment preferably includes a first reflective layer 8a that reflects light containing the first wavelength on the surface of the solid-state component 4 opposite the surface facing the light guide plate 6. Furthermore, a second reflective layer 8b that reflects light containing the first wavelength on the surface of the microwave field transmission antenna 3 opposite the surface facing the light guide plate 6 is preferably included. In particular, when the light guide plate 6 is the above-described diffuser plate, it is preferable to provide the first reflective layer 8a and the second reflective layer 8b. When the substrate 2 is a glass substrate, the second reflective layer 8b may be located on the second main surface S2 of the substrate 2, as shown in FIG. 11(b). By providing such a reflective layer, it is possible to prevent light containing the first wavelength from leaking out without being introduced into the solid-state component.

[0067] The reflective layer is not particularly limited as long as it reflects light including the first wavelength, and examples thereof include a metal vapor deposition film. The thickness of the reflective layer is not particularly limited as long as it provides a desired reflectance for light including the first wavelength, and is set appropriately.

[0068] (2) First wavelength-selective filter and second optical wavelength-selective filter Fig. 12 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to this embodiment. As shown in Fig. 12, the solid-state quantum sensor module 1A according to this embodiment preferably includes a first optical wavelength-selective filter 9a in the light guide plate 6 that selectively transmits light containing a first wavelength. This can suppress light of undesired wavelengths other than the light containing the first wavelength, thereby improving the efficiency and sensitivity of sensing. The first optical wavelength-selective filter may be located between the light guide plate 6 and the light source 5.

[0069] 12, the solid-state quantum sensor module 1A of this embodiment preferably includes a second optical wavelength selection filter 9b in the solid-state element 4 that selectively transmits light containing the second wavelength. This can suppress light of undesired wavelengths other than the light containing the second wavelength, thereby improving the efficiency and sensitivity of sensing. The second optical wavelength selection filter may be located between the solid-state element 4 and the photodetector 7.

[0070] The first wavelength-selective filter and the second wavelength-selective filter are not particularly limited as long as they selectively transmit light including a first wavelength and light including a second wavelength, respectively, and known filters can be used. For example, the first wavelength-selective filter is configured to transmit light including a first wavelength (e.g., green light) and reflect light other than the first wavelength, and the second wavelength-selective filter is configured to transmit light including a second wavelength (e.g., red light) and reflect light other than the second wavelength. The first wavelength-selective filter and the second wavelength-selective filter have, for example, a multilayer film. Selective transmission means that the transmittance of light in a specific wavelength range including the target wavelength is higher than the transmittance of light outside the specific wavelength range. The first wavelength-selective filter preferably has a transmittance of 70% or more, more preferably 80% or more, in a wavelength band of ±50 nm from the first wavelength. The second wavelength-selective filter preferably has a transmittance of 70% or more, more preferably 80% or more, in a wavelength band of ±50 nm from the second wavelength.

[0071] (3) Shielding part The solid-state quantum sensor module of this embodiment preferably has a shielding portion that shields microwaves emitted from the microwave field transmitting antenna. The shielding portion is preferably located so as to surround the microwave field transmitting antenna. The shielding portion is preferably located at least one of within the substrate and within the light guide plate. By having the shielding portion, it is possible to prevent electronic components such as the photodetector and light source from being directly exposed to microwave noise emitted from the microwave field transmitting antenna.

[0072] The shielding portion is made of, for example, a metal material, which may be any material capable of blocking microwaves, such as aluminum, chromium, copper, silver, titanium, or gold.

[0073] Fig. 13(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. Fig. 13(b) is an exploded view of the solid-state quantum sensor module shown in Fig. 13(a). Fig. 13(c) is a top view of the light guide plate 6 shown in Fig. 13(b), and Fig. 13(d) is a diagram showing the substrate 2 and antenna 3 shown in Fig. 13(b) when viewed from the normal direction D. N FIG.

[0074] 13(a) to 13(d) has a first shielding portion 10a in the substrate 2 and a second shielding portion 10b in the light guide plate 6. By having shielding portions in both the substrate and the light guide plate in this way, the shielding effect can be improved.

[0075] (4) Photonic Wire Bonding FIG. 14(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to this embodiment. As shown in FIG. 14(a), in this embodiment, the photodetector 7 and the solid-state device 4 may be connected by a polymer waveguide 11 (photonic wire bond, PWB). The shape of the polymer waveguide can be manufactured using a 3D printer or the like to match the actual positions of the components, which is preferable because it does not require high-precision alignment of the optical components to be connected. Conventionally known materials can be used as the polymer waveguide material.

[0076] (5) Light-blocking walls FIG. 14(b) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in FIG. 14(b), the solid-state quantum sensor module 1A preferably includes a light-shielding wall 12 that blocks external light. By including the light-shielding wall, highly sensitive sensing becomes possible. The material of the light-shielding wall is preferably a light-shielding and non-magnetic material. A non-magnetic material is a material that is difficult to magnetize. Examples of such materials include metal materials such as aluminum, copper, and stainless steel, as well as carbon and chromium oxide.

[0077] (6) Reference photodetector The solid-state quantum sensor module in this embodiment preferably includes a reference photodetector that detects light containing the first wavelength. By including the reference photodetector, it becomes possible to measure the intensity of light containing the first wavelength from the light source while controlling it to a constant level, thereby enabling highly accurate sensing.

[0078] (7) Heater element 14(b), the solid-state quantum sensor module 1A in this embodiment preferably includes a heater element 13 at a position surrounded by the light-shielding wall 12 and the substrate 2. The heater element 13 is preferably located on the first main surface side of the substrate 2. By controlling the temperature environment inside the light-shielding wall 12 to a constant value using the heater element 13, it is possible to suppress shifts in the optically detected magnetic resonance spectrum due to the temperature environment, enabling highly accurate sensing.

[0079] (8) Permanent magnets The solid-state quantum sensor module in this embodiment may include a permanent magnet. The permanent magnet may be located adjacent to the solid-state component. The permanent magnet induces the Zeeman effect, m s =±1 spin sublevels are set up to break the degeneracy.

[0080] (9) Other components The solid-state quantum sensor module in this embodiment may include various electronic components such as an IC (integrated circuit) including an amplifier and an A / D converter.

[0081] A-2. Second embodiment The solid-state quantum sensor module 1B of the second embodiment shown in FIGS. 15(a), 15(b), and 15(c) includes a substrate 2 having a first main surface S1 and a second main surface S2 located on the opposite side of the first main surface S1, a solid-state element 4 having a color center located on the first main surface S1 side of the substrate 2, and a solid-state element 4 having a normal direction D N The solid-state element 4 is provided with a light guide plate 6 located between the substrate 2 and the solid-state element 4, a microwave field transmitting antenna 3, a light source 5 located on the first main surface S1 side of the substrate and emitting light including a first wavelength that excites the color center from the ground state to an excited state, and a photodetector 7 located on the first main surface S1 side of the substrate and detecting photoluminescence including a second wavelength emitted from the solid-state element 4. The solid-state element 4 is also provided with a light guide plate 6 located between the substrate 2 and the solid-state element 4, a microwave field transmitting antenna 3, a light source 5 located on the first main surface S1 side of the substrate and emitting light including a first wavelength that excites the color center from the ground state to an excited state, and a photodetector 7 located on the first main surface S1 side of the substrate and detecting photoluminescence including a second wavelength that is emitted from the solid-state element 4. N , the photodetector 7 overlaps with the microwave field transmitting antenna 3. The photodetector 7 is also aligned in the normal direction D of the first main surface S1 of the substrate 2. N When viewed along the line S1 of the substrate 2, the light source 5 is positioned so as not to overlap with the microwave field transmitting antenna 3. Furthermore, in this embodiment, the microwave field transmitting antenna 3 is a transmission antenna that can transmit light including a first wavelength, and the light source 5 is positioned so as not to overlap with the microwave field transmitting antenna 3 when viewed along the line S1 of the substrate 2. N When viewed along the normal direction D, the microwave field transmitting antenna 3 overlaps with the light source 5, and the microwave field transmitting antenna 3 overlap with the light source 5. N, a light guide plate 6 is located between a light source 5 and an antenna 3 for transmitting a microwave field.

[0082] According to this embodiment, the light source, the light guide plate, and the microwave field transmitting antenna are arranged in a stacked manner, which allows for further miniaturization of the solid-state quantum sensor module. Furthermore, since the light emitted from the light source propagates in the thickness direction, the light from the light source can be efficiently introduced into the solid-state element.

[0083] Furthermore, the solid-state quantum sensor module 1B of the second embodiment preferably has the light source 5, light guide plate 6, microwave field transmission antenna 3, and solid-state element 4, in this order from the substrate 2 side, in the region where the light source 5 and microwave field transmission antenna 3 overlap. This allows microwaves from the microwave field transmission antenna to be irradiated to the color center more efficiently. Each component of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0084] 1. Solid-state devices 15(a), 15(b), and 15(c), the solid-state component 4 in this embodiment is located on the first main surface S1 side of the substrate 2, and is located on the surface of the light guide plate 6 opposite to the surface on the substrate 2 side. N In this case, it is preferable that the solid-state element 4 is located on the surface opposite to the surface of the microwave field transmitting antenna 3 facing the substrate 2. N In the solid-state quantum sensor module 1B of this embodiment, the light source 5 is positioned on the surface opposite to the surface on the substrate 2 side. N In the region where the light source 5 and the microwave field transmitting antenna 3 overlap when viewed from the side, the substrate 2, the light source 5, the light guide plate 6, the microwave field transmitting antenna 3 and the solid-state element 4 are aligned in the normal direction D N It is preferable to have them in this order.

[0085] The material, shape, and other characteristics of the solid-state component in this embodiment can be the same as those of the solid-state component in the first embodiment.

[0086] For example, as shown in FIGS. 16(a) and 16(b), in the solid-state component 4 of this embodiment, each line pattern 4p in the form of a line pattern preferably has a photonic mirror structure.

[0087] As shown in FIG. 17, it is preferable that the solid-state component 4 in this embodiment has a curvature at its end 4E on the photodetector side.

[0088] 18(a) and 18(b), the solid-state component 4 in this embodiment preferably has a plurality of color centers (NV in FIG. 18) aligned at predetermined intervals along the direction D1 toward the photodetector. It is more preferable that each line pattern 4p of the solid-state component 4 has a plurality of color centers (NV in FIG. 18) aligned at predetermined intervals along the direction D1 toward the photodetector.

[0089] 2. Antenna for transmitting microwave fields The solid-state quantum sensor module of this embodiment includes a microwave field transmitting antenna to apply a microwave field to the solid-state element. As shown in FIG. 15, the microwave field transmitting antenna 3 of this embodiment is oriented in the normal direction D N In this embodiment, the microwave field transmitting antenna 3 may be located between the light source 5 and the solid-state component 4.

[0090] The microwave field transmission antenna in this embodiment is preferably a transmission antenna that can transmit light containing the first wavelength. Such a transmission antenna has, for example, a transparent substrate and a metal layer made of thin metal wires. This results in an antenna that has both a light-opaque conductive portion made of thin metal wires and a light-transmitting window portion. The material of the thin metal wires is not particularly limited as long as it has excellent conductivity, and may be, for example, a metal such as gold, silver, copper, iron, nickel, or chromium, or an alloy.

[0091] The pattern shape of the metal layer of the transparent antenna is not particularly limited, and may be, for example, a stripe shape, a mesh shape, or a random mesh shape, but from the viewpoint of transparency, the aperture ratio is preferably 80% or more. The aperture ratio is the ratio of the area of ​​the transparent window to the total area (the total area of ​​the opaque conductive part made of thin metal wires and the transparent window).

[0092] The solid-state quantum sensor module of this embodiment may include a microwave field control circuit, which has the same content as that of the first embodiment.

[0093] 3.Light source The solid-state quantum sensor module of this embodiment includes a light source that emits light containing a first wavelength that excites color centers in the solid-state element 4 from the ground state to an excited state. As shown in Fig. 15, in this embodiment, the light source 5 is located at a position where it can emit light containing the first wavelength toward the light guide plate 6, and is located opposite the microwave field transmitting antenna 3 across the light guide plate 6. That is, in the normal direction D N In this embodiment, a light guide plate 6 is located between a light source 5 and a microwave field transmitting antenna 3. Other features of the light source are the same as those in the first embodiment.

[0094] 4.Light guide plate The solid-state quantum sensor module of this embodiment includes a light guide plate that guides light containing a first wavelength emitted from a light source to a solid-state component. In this embodiment, the light guide plate is preferably a diffusion plate because it is required to guide light to a solid-state component located above. Also, in this embodiment, as shown in FIG. 15(c), the light guide plate 6 may have a recess in which the light source 5 can be placed. Other features of the diffusion plate are similar to those of the diffusion plate described in the first embodiment.

[0095] 5. Photodetector The solid-state quantum sensor module of this embodiment includes a photodetector located on the first main surface side of the substrate, which detects photoluminescence including the second wavelength emitted from the solid-state element. Other features of the photodetector are similar to those of the first embodiment.

[0096] 6. Substrate The solid-state quantum sensor module of this embodiment includes a substrate. The substrate is a member that supports components such as the light source, photodetector, solid-state device, light guide plate, and microwave field transmission antenna. The substrate is the same as the substrate described in the first embodiment.

[0097] 7.Other (1) Reflective layer Fig. 19 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to this embodiment. As shown in Fig. 19, the solid-state quantum sensor module 1B according to this embodiment preferably includes a first reflective layer 8a that reflects light including the first wavelength on the surface of the solid-state component 4 opposite to the surface facing the light guide plate 6. By providing such a reflective layer, leakage of light including the first wavelength from the solid-state component can be suppressed. Other features of the reflective layer are similar to those of the reflective layer described in the first embodiment.

[0098] (2) Second optical wavelength selection filter 19, the solid-state quantum sensor module 1B of this embodiment preferably includes a second optical wavelength selective filter 9b that selectively transmits light including the second wavelength within the solid-state element 4. The second optical wavelength selective filter 9b may be located between the solid-state element 4 and the photodetector 7.

[0099] The second wavelength selection filter is not particularly limited as long as it selectively transmits light containing the second wavelength, and the same second wavelength selection filter as described in the first embodiment can be used.

[0100] (3) Photonic Wire Bonding Fig. 20(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Fig. 20(a), in this embodiment, the photodetector 7 and the solid-state component 4 may be connected by a polymer waveguide 11 (photonic wire bond, PWB). The polymer waveguide may be the same as that in the first embodiment.

[0101] (4) Light-shielding wall and heater element Figure 20(b) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 20(b), the solid-state quantum sensor module 1B preferably includes a light-shielding wall 12 that blocks light from outside. As shown in Figure 20(b), the solid-state quantum sensor module 1B in this embodiment preferably includes a heater element 13 in a position surrounded by the light-shielding wall 12 and the substrate 2. The light-shielding wall and the heater element may be the same as those in the first embodiment.

[0102] (5) Other The solid-state quantum sensor module in this embodiment may have other components such as a reference photodetector and a permanent magnet, etc. The reference photodetector and permanent magnet may be the same as those in the first embodiment.

[0103] A-3. Third embodiment The solid-state quantum sensor module of this embodiment is provided with a sensor element structure having a solid-state element instead of the solid-state element of the first and second embodiments described above.

[0104] 21(a) is a schematic top view showing an example of a sensor element structure in this embodiment, and FIG. 21(b) is a schematic cross-sectional view taken along the line AA in FIG. 21(a). As shown in FIGS. 21(a) and 21(b), the sensor element structure 50 includes a first optical functional layer 52, a solid-state element 53 having a color center, and a second optical functional layer 54, which are arranged in a thickness direction D. TThe sensor element structure 50 is disposed so that the first optical function layer 52 faces the substrate 2. T is usually in the normal direction D of the first main surface S1 of the substrate 2. N matches.

[0105] The solid-state element 53 excites color centers from a ground state to an excited state by excitation light containing light of a first wavelength, and emits photoluminescence containing light of a second wavelength. The first optical functional layer 52 reflects the light of the second wavelength emitted from the solid-state element 53, and the second optical functional layer 54 transmits and reflects the light of the second wavelength. Furthermore, in the present disclosure, the solid-state element 53 has a thickness in the thickness direction D T The solid-state component 53 has a plurality of element portions 53p isolated from one another by grooves X extending in the direction perpendicular to the surface of the solid-state component 53. Hereinafter, the structure of each element portion 53p of the solid-state component 53 in this embodiment will also be referred to as a second photonic cavity structure.

[0106] In the sensor element structure of the present disclosure, the solid-state element has a predetermined second photonic cavity structure, which allows photoluminescence including light of the second wavelength emitted from the solid-state element to efficiently travel toward the second optical functional layer. Furthermore, by positioning the solid-state element between a first optical functional layer that reflects light of the second wavelength and a second optical functional layer that transmits and reflects light of the second wavelength, the light of the second wavelength can be resonated and amplified between the first optical functional layer and the second optical functional layer, and can be easily emitted from the second optical functional layer. This results in a sensor element structure that can improve the intensity of the emitted photoluminescence.

[0107] Therefore, the solid-state quantum sensor module of the present disclosure is provided with the above-described sensor element structure, and is therefore capable of highly sensitive sensing. Below, a first aspect will be described in detail as the solid-state quantum sensor module of the first embodiment above, in which the above-described sensor element structure is provided instead of the solid-state element, and a second aspect will be described in detail as the solid-state quantum sensor module of the second embodiment above, in which the above-described sensor element structure is provided instead of the solid-state element.

[0108] A-3-1. First mode 22 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module of a first aspect in the third embodiment of the present disclosure. Note that in FIG. 22 and in the schematic cross-sectional views of the solid-state quantum sensor module described later, the groove X of the sensor element structure 50 is omitted. A solid-state quantum sensor module 1C of the present disclosure includes: a substrate 2 having a first main surface S1 and a second main surface S2 located opposite to the first main surface S1; a sensor element structure 50 including a solid-state element 53 located on the first main surface S1 side of the substrate 2; a light guide plate 6 located between the substrate 2 and the sensor element structure 50; a microwave field transmitting antenna 3; a light source 5 located on the first main surface S1 side of the substrate 2 and emitting excitation light having a first wavelength toward the light guide plate 6 to excite color centers in the solid-state element 53 from the ground state to an excited state; and a photodetector 7 located on the first main surface S1 side of the substrate 2 and detecting photoluminescence including light of a second wavelength.

[0109] As in the first embodiment, the solid-state component 53 is oriented in the normal direction D N , the photodetector 7 overlaps with the microwave field transmitting antenna 3. The photodetector 7 is also aligned in the normal direction D of the first main surface S1 of the substrate 2. N When viewed along the normal direction D of the first main surface S1 of the substrate 2, the light source 5 is positioned so as not to overlap with the microwave field transmitting antenna 3. N When viewed along the line, it is located at a position that does not overlap with the microwave field transmitting antenna 3.

[0110] Each component of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0111] 1.Sensor element structure As shown in Fig. 22, in the solid-state quantum sensor module 1C of this embodiment, the sensor element structure 50 is arranged so that the first optical function layer 52 faces the substrate 2. The sensor element structure 50 is located on the first main surface S1 side of the substrate 2, and on the surface of the light guide plate 6 opposite to the surface on the substrate 2 side. The sensor element structure 50 is also oriented in the normal direction D N 22, it is preferable that the microwave field transmitting antenna 3 is located on the surface opposite to the surface on the substrate 2 side. N When viewed along the normal direction D, it is preferable that at least a part of the sensor element structure 50 is located at a position overlapping the light guide plate 6. N When viewed along the line , the sensor element structure 50 is positioned so that at least the solid element 53 overlaps with the microwave field transmitting antenna 3 , and may be positioned so that the entire structure overlaps.

[0112] (1) Solid-state devices The types of solid-state components are the same as those in the first embodiment described above, and therefore will not be described here.

[0113] In the present disclosure, the solid-state component 53 has a thickness in the thickness direction D T By being located between the first optical functional layer 52 and the second optical functional layer 54, light can be resonated and amplified between the first optical functional layer and the second optical functional layer.

[0114] The thickness T0 (optical distance) of such a solid-state element is preferably set to, for example, n1 times (n1 is an integer) the second wavelength λ2 / 2. The optical distance is the value obtained by multiplying the physical distance by the refractive index of the medium. This is because resonance of light of the second wavelength is likely to occur. n1 is 1 or more, and is appropriately set by simulation or the like based on the physical properties such as the permittivity and transmittance of the second photonic cavity material (i.e., the material of the solid-state element).

[0115] In the present disclosure, the solid-state element has a thickness in the thickness direction D T The second optical function layer has a plurality of element portions 53p isolated from one another by grooves X extending in the direction perpendicular to the optical axis. By having such a plurality of element portions 53p, photoluminescence including light of the second wavelength can be efficiently propagated to the second optical function layer side due to the difference in refractive index with the grooves X (air).

[0116] In the present disclosure, the shape and arrangement of the grooves are not particularly limited as long as they allow the solid-state element to be isolated into a plurality of element portions. As shown in Fig. 21(b), the grooves X may be formed, for example, from the surface on the second optical functional layer 54 side to the interface between the solid-state element 53 and the first optical functional layer 52. On the other hand, the grooves X may also be formed in the first optical functional layer. As shown in Fig. 21(a), the grooves X are preferably lattice-shaped in plan view.

[0117] The shape of the element portion 53p in plan view is not particularly limited, but examples include a rectangular shape, a polygonal shape, a circular shape, etc. The size of the element portion in plan view is, for example, 50 nm or more, and preferably 100 nm or more. On the other hand, the size of the element portion is, for example, 100 μm or less, and preferably 10 μm or less. The size of the element portion refers to the longest length of the element portion, which corresponds to W in the case of FIG. 21(a).

[0118] 23 is a schematic cross-sectional view showing an example of the sensor element structure of the present disclosure. As shown in FIG. 23, the element portion 53p is T Direction D perpendicular to L and extends in the thickness direction D T It is preferable to have a plurality of color center layers (NV in FIG. 23) positioned side by side at a predetermined interval T1 along the line.

[0119] By having multiple color center layers positioned side by side at a predetermined interval, it is possible to prevent the light of the second wavelength from weakening each other and to amplify the amount of light emitted. The predetermined interval T1 (optical distance) is preferably n2 times the second wavelength λ2 (n2 is a positive number). The n2 is preferably 0.6 to 1.4, and more preferably 0.8 to 1.2.

[0120] The number of color center layers included in each element portion 53p is, for example, two or more, or may be five or more, or may be ten or more. On the other hand, the number is, for example, 1000 or less, or may be 500 or less, or may be 100 or less.

[0121] As a method for arranging color centers at a predetermined interval, conventionally known methods can be used. In order to artificially form NV centers in diamond, for example, nitrogen atoms and vacancies are simultaneously introduced into diamond. To introduce nitrogen atoms, a method using ion implantation is used after preparing diamond. In ion implantation, nitrogen atoms can be introduced into diamond in a desired arrangement and in a desired amount by improving the ion beam focusing technology and the controllability of the ion amount. In ion implantation, ions accelerated to tens to thousands of kV are usually irradiated, so vacancies are also introduced at the same time as nitrogen. Alternatively, a method is used in which nitrogen is introduced during diamond synthesis, and then electron beams are irradiated under control to diamond that has already been nitrogen-doped.

[0122] (2) First optical functional layer In this embodiment, the first optical functional layer is a layer that reflects light of the second wavelength, and preferably transmits light of the first wavelength that excites color centers in the solid-state element from the ground state to the excited state.

[0123] The first optical functional layer preferably has a reflectance of 70% or more, more preferably 90% or more, for the light of the second wavelength. On the other hand, the reflectance of the light of the second wavelength is, for example, 99.9% or less, and may be 95% or less. Furthermore, the transmittance of the light of the first wavelength is preferably 50% or more, more preferably 70% or more.

[0124] It is preferable that such a first optical functional layer be a multilayer film in which a plurality of materials with different refractive indices are alternately stacked to form a distributed Bragg reflector (DBR). As shown in Fig. 21(b), it is preferable that the first optical functional layer 52 be a multilayer film in which low-refractive-index layers 52a and high-refractive-index layers 52b are alternately stacked.

[0125] Examples of layers included in the multilayer film include a combination of materials such as SiO2, TiO2, ZrO2, MgO, Ta2O5, Al2O3, MgF2, and CaF2. Among these, it is preferable to have a SiO2 layer as a low refractive index layer and a TiO2 layer as a high refractive index layer. The reflectance can be controlled by adjusting the type and number of layers (number of pairs of low refractive index and high refractive index layers) included in the multilayer film. The thickness (optical path length) of each layer included in the multilayer film is preferably the second wavelength λ2 / 4.

[0126] (3) Second optical functional layer The second optical functional layer in this embodiment is a layer that transmits and reflects light of the second wavelength λ2. Examples of such second optical functional layers include those of the same type as the multilayer film of the first optical functional layer described above. The number of layers included in the multilayer film of the second optical functional layer (the number of pairs of low-refractive index layers and high-refractive index layers) is preferably smaller than the number of layers included in the multilayer film of the first optical functional layer (the number of pairs of low-refractive index layers and high-refractive index layers). This is because the reflectance of the second optical functional layer can be made smaller than that of the first optical functional layer.

[0127] The second optical functional layer preferably has a reflectance of 10% or more, more preferably 30% or more, for light of the second wavelength, while for example, it is preferably 50% or less, more preferably 40% or less. Also, the second optical functional layer preferably has a transmittance of 50% or more, more preferably 70% or more, for example, it is preferably 90% or less, more preferably 80% or less.

[0128] (4) Thickness adjustment layer As described above, the thickness T0 (optical distance) of the solid-state element in this embodiment is preferably n1 times (n1 is an integer) the second wavelength λ2 / 2. On the other hand, if the thickness of the solid-state element is less than the above thickness, the sensor element structure 50 of the present disclosure preferably includes a thickness adjustment layer 55 at least either between the solid-state element 53 and the first optical functional layer 52 or between the solid-state element 53 and the second optical functional layer 54, as shown in FIG.

[0129] The thickness (optical distance) of the thickness adjustment layer 55 is preferably such that the total thickness together with the thickness of the solid-state element is n1 times (n1 is an integer) the second wavelength λ2 / 2.

[0130] The refractive index of the thickness adjusting layer is preferably close to that of the solid-state component. The ratio (n5 / n0) of the refractive index n5 of the thickness adjusting layer to the refractive index n0 of the solid-state component is, for example, 1.5 or less, preferably 1.3 or less. Alternatively, it may be, for example, 0.65 or more, or 0.75 or more.

[0131] The thickness adjusting layer having the above refractive index is preferably a layer made of, for example, TiO2, In2O3, SnO2, Ta2O5, Nb2O5, Ti3O5, TiO, or the like.

[0132] (5) Manufacturing method The method for manufacturing the sensor element structure is not particularly limited, but may include, for example, a solid-state element preparation step of preparing the solid-state element, an arrangement step of arranging the first optical adjustment layer on one side of the solid-state element and the second optical adjustment layer on the other side, and a groove formation step of forming a groove from the second optical adjustment layer side to at least the interface between the solid-state element and the first optical adjustment layer.

[0133] The solid-state component preparation step can be carried out by a conventionally known method.

[0134] The disposing step may be, for example, a method of laminating and disposing the first optical adjustment layer and the second optical adjustment layer on the solid-state element by sputtering film formation, etc. Either the disposing of the first optical adjustment layer or the disposing of the second optical adjustment layer may be performed first.

[0135] The groove forming step can be carried out by a conventionally known method, for example, grooves can be formed in the second optical adjustment layer and the solid-state element by dry etching such as reactive ion etching.

[0136] 2.Light source The light source is the same as the light source in the first embodiment.

[0137] 3. Antenna for transmitting microwave fields The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna 3 to apply a microwave field to the solid-state element. As shown in Figure 22, the microwave field transmitting antenna 3 is located closer to the substrate 2 than the sensor element structure 50.

[0138] Other features of the microwave field transmitting antenna are the same as those described in the first embodiment.

[0139] 4.Light guide plate The solid-state quantum sensor module of this embodiment includes a light guide plate located between the substrate and the sensor element structure, which guides excitation light, including light of a first wavelength emitted from a light source, to the solid-state element. In this embodiment, the light guide plate may be an optical waveguide that propagates light in the surface direction of the light guide plate, or may be a diffusion plate that diffuses light in the vertical direction.

[0140] The optical waveguide and the diffusion plate are the same as those described in the first embodiment.

[0141] The light guide plate in this embodiment may have both the functions of the optical waveguide and the diffusion plate. N When viewed along the axis, the light including the first wavelength is propagated by the optical waveguide from the end on the light source side to the end of the sensor element structure, and a diffuser plate is used in the area overlapping with the sensor element structure, making it easier to introduce light into the sensor element structure located above.

[0142] 5. Photodetector 22, the solid-state quantum sensor module in this embodiment includes a photodetector 7 located on the first main surface S1 side of the substrate 2, and detecting photoluminescence including light of a second wavelength emitted from the sensor element structure 50. The photoluminescence may include, as the second wavelength, one or more wavelengths of light corresponding to the emission wavelength of the NV center (for example, a wavelength of about 637 nm).

[0143] As shown in FIG. 22, the photodetector 7 is N When viewed along the axis, the photodetector 7 is disposed at a position where it does not overlap with the microwave field transmitting antenna 3. The photodetector 7 preferably has a detection surface on at least the upper surface.

[0144] 6. Reflective mirror 22, the solid-state quantum sensor module 1C in this embodiment preferably includes a reflecting mirror 16 that reflects the photoluminescence emitted from the sensor element structure 50 and directs it toward the detector 7. The reflecting mirror may be a member made of a metal or non-metal, or a member having a reflective layer made of a metal or non-metal. The metal or non-metal material is preferably a non-magnetic material, such as aluminum (Al), tin (Sn), silver (Ag), gold (Au), titanium (Ti), chromium (Cr), or alloys thereof, or oxides, nitrides, or oxynitrides thereof.

[0145] The position of the reflecting mirror is not particularly limited as long as it is at least capable of reflecting the photoluminescence emitted from the sensor element structure and directing it toward the detector. Since photoluminescence is emitted upward from the sensor element structure, it is preferable that the reflecting mirror be located at least above the sensor element structure. Furthermore, as shown in FIG. 22, it is preferable that the reflecting mirror be located on the first surface S1 of the substrate 2 so as to cover the sensor element structure 50.

[0146] The reflecting mirror may be capable of blocking external light. That is, the reflecting mirror may function as a light-shielding wall, which will be described later. In this case, the solid-state quantum sensor module of this embodiment may have a heater element, which will be described later, at a position surrounded by the reflecting mirror and the substrate.

[0147] 7. Substrate The substrate is the same as that described in the first embodiment.

[0148] 8.Other (1) Reflective layer 25(a) and 25(b) are schematic cross-sectional views showing an example of a solid-state quantum sensor module according to this embodiment. As shown in FIG. 25(a), the solid-state quantum sensor module 1C according to this embodiment preferably includes a reflective layer 19 that reflects light of the first wavelength on the surface of the microwave field transmission antenna 3 opposite to the surface facing the light guide plate 6. In particular, when the light guide plate 6 is the above-mentioned diffusion plate, it is preferable to provide the reflective layer 19. When the substrate 2 is a glass substrate, the reflective layer 19 may be located on the second main surface S2 of the substrate 2, as shown in FIG. 25(b). By providing such a reflective layer, it is possible to prevent light of the first wavelength from leaking out without being introduced into the solid-state element.

[0149] The reflective layer is not particularly limited as long as it reflects light including the first wavelength, and examples thereof include a metal vapor deposition film. The thickness of the reflective layer is not particularly limited as long as it provides a desired reflectance for light including the first wavelength, and is set appropriately.

[0150] (2) Wavelength-selective filter 26 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module according to the present disclosure. As shown in Fig. 26, the solid-state quantum sensor module 1C of this embodiment preferably includes a wavelength-selective filter 20 that selectively transmits light of a first wavelength within the light guide plate 6. The wavelength-selective filter may be located between the light guide plate 6 and the light source 5.

[0151] The wavelength selection filter is not particularly limited as long as it selectively transmits light of the first wavelength, and any known filter can be used.

[0152] (3) Shielding part The solid-state quantum sensor module of this aspect preferably includes a shielding portion that shields microwaves emitted from the microwave field transmitting antenna. The shielding portion is preferably located so as to surround the microwave field transmitting antenna. The shielding portion is preferably located at least one of within the substrate and within the light guide plate. By including the shielding portion, it is possible to prevent electronic components such as the photodetector and light source from being directly exposed to microwave noise emitted from the microwave field transmitting antenna. The material of the shielding portion in the first embodiment can be used.

[0153] Fig. 27(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. Fig. 27(b) is an exploded view of the solid-state quantum sensor module shown in Fig. 27(a). Fig. 27(c) is a top view of the light guide plate 6 shown in Fig. 27(b). Fig. 27(d) is a schematic cross-sectional view of the substrate 2 and microwave field transmitting antenna 3 shown in Fig. 27(b) when they are aligned in the normal direction D. N FIG.

[0154] 27(a) to 27(d) has a first shielding portion 21a in the substrate 2 and a second shielding portion 21b in the light guide plate 6. By providing shielding portions both in the substrate and the light guide plate in this way, the shielding effect can be improved.

[0155] (4) Other components The solid-state quantum sensor module preferably includes one or more of a light-shielding wall that blocks external light, a reference photodetector that detects light including the first wavelength, a heater element, and a permanent magnet. The light-shielding wall, reference photodetector, heater element, and permanent magnet are the same as those described in the first embodiment. The solid-state quantum sensor module in this embodiment may also include various electronic components, such as an amplifier, an IC (integrated circuit) such as an A / D converter, etc.

[0156] A-3-2. Second mode 28 is a schematic cross-sectional view showing a second aspect of a solid-state quantum sensor module according to a third embodiment of the present disclosure. A solid-state quantum sensor module 1C according to the present disclosure includes a substrate 2 having a first main surface S1 and a second main surface S2 opposite to the first main surface S1, a sensor element structure 50 including a solid-state element 53 and located on the first main surface S1 side of the substrate 2, a light guide plate 6 located between the substrate 2 and the sensor element structure 50, a microwave field transmitting antenna 3, a light source 5 located on the first main surface S1 side of the substrate 2 and emitting excitation light having a first wavelength toward the light guide plate 6 to excite color centers in the solid-state element 53 from a ground state to an excited state, and a photodetector 7 located on the first main surface S1 side of the substrate 2 and detecting photoluminescence including light of a second wavelength.

[0157] As in the second embodiment, the solid-state component 53 is oriented in the normal direction D N , the photodetector 7 overlaps with the microwave field transmitting antenna 3. The photodetector 7 is also aligned in the normal direction D of the first main surface S1 of the substrate 2. N When viewed along the normal direction D, the microwave field transmitting antenna 3 is not overlapped with the microwave field transmitting antenna 3. Furthermore, similar to the second embodiment, the microwave field transmitting antenna 3 is a transmission antenna that can transmit light including the first wavelength, and the normal direction D N , a light guide plate 6 is located between a light source 5 and an antenna 3 for transmitting a microwave field.

[0158] According to this aspect, the light source, the light guide plate, and the microwave field transmitting antenna are arranged in a stacked manner, which allows for further miniaturization of the solid-state quantum sensor module. Furthermore, light from the light source can be efficiently introduced into the sensor element structure. Each component of the solid-state quantum sensor module of this aspect will be described in detail below.

[0159] Each component of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0160] 1.Sensor element structure 28, in this embodiment, the sensor element structure 50 is located on the first main surface S1 side of the substrate 2, and is located on the surface of the light guide plate 6 opposite to the surface on the substrate 2 side. N 2, the sensor element structure 50 is disposed on the surface opposite to the surface of the microwave field transmitting antenna 3 facing the substrate 2. N The solid-state quantum sensor module 1C of this embodiment is located on the surface opposite to the surface of the light source 5 on the substrate 2 side. N , it is preferable that the substrate 2, the light source 5, the light guide plate 6, the microwave field transmitting antenna 3, and the sensor element structure 50 are provided in this order.

[0161] Other features of the sensor element structure in this embodiment are the same as those of the sensor element structure in the first embodiment described above, and therefore description thereof will be omitted here.

[0162] 2. Antenna for transmitting microwave fields The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to apply a microwave field to the solid-state element. As shown in Fig. 28, the microwave field transmitting antenna 3 in this embodiment is arranged closer to the substrate 2 than the sensor element structure 50. In this embodiment, the microwave field transmitting antenna 3 may be arranged between the light source 5 and the sensor element structure 50.

[0163] The microwave field transmitting antenna in this embodiment is preferably a transmission antenna that can transmit light of the first wavelength. Such a transmission antenna includes, for example, a transparent substrate and a metal layer made of thin metal wires. This results in an antenna that has both a light-opaque conductive portion made of thin metal wires and a light-transmitting window portion. The material and pattern shape of the thin metal wires are the same as those described in the second embodiment.

[0164] The solid-state quantum sensor module in this aspect may include a microwave field control circuit, which has the same content as that of the first embodiment.

[0165] 3.Light source The solid-state quantum sensor module in this embodiment includes a light source that emits excitation light containing light of a first wavelength that excites color centers in the solid-state element from the ground state to an excited state. As shown in Figure 28(a), in this embodiment, the light source 5 is disposed at a position facing the microwave field transmitting antenna 3 across the light guide plate 6. That is, in the normal direction D N In this embodiment, a light guide plate 6 is located between a light source 5 and a microwave field transmitting antenna 3. Other features of the light source are the same as those in the first embodiment.

[0166] 4.Light guide plate The solid-state quantum sensor module in this embodiment includes a light guide plate that guides excitation light, including light of a first wavelength emitted from a light source, to the sensor element structure. In this embodiment, the light guide plate is preferably a diffusion plate, since it is required to guide light to the sensor element structure located above. Also, in this embodiment, as shown in FIG. 28(b), the light guide plate 6 may have a recess in which the light source 5 can be placed. Other features of the diffusion plate are similar to those of the diffusion plate described in the first embodiment.

[0167] 5. Photodetector The solid-state quantum sensor module of this embodiment includes a photodetector disposed on the first main surface side of the substrate and detecting photoluminescence including light of the second wavelength. Other features of the photodetector are the same as those of the first embodiment.

[0168] 6. Reflective mirror 28(a), the solid-state quantum sensor module 1C in this embodiment preferably includes a reflecting mirror 16 that reflects the photoluminescence emitted from the sensor element structure 50 and directs it toward the detector. The reflecting mirror is the same as the substrate described in the first embodiment.

[0169] 7. Substrate The solid-state quantum sensor module of this embodiment includes a substrate. The substrate is a member that supports components such as the light source, photodetector, sensor element structure, light guide plate, and microwave field transmission antenna. The substrate is the same as the substrate described in the first embodiment.

[0170] 8.Other (1) Reflective layer Fig. 29 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Fig. 29, the solid-state quantum sensor module 1C in this embodiment preferably includes a reflective layer 19 that reflects light including the first wavelength on the surface of the light guide plate 6 opposite to the surface on the sensor element structure 50 side. By including such a reflective layer, leakage of light including the first wavelength from the light guide plate 6 can be suppressed. Other features of the reflective layer are similar to those of the reflective layer described in the first embodiment.

[0171] (2) Light shielding wall and heater element The solid-state quantum sensor module in this embodiment preferably includes a light-shielding wall that blocks external light. The solid-state quantum sensor module in this embodiment also preferably includes a heater element in a position surrounded by the light-shielding wall and the substrate. The light-shielding wall and the heater element may be the same as those in the first embodiment.

[0172] (3) Other The solid-state quantum sensor module in this embodiment may include other components such as a reference photodetector and a permanent magnet, etc. The reference photodetector and permanent magnet may be the same as those in the first embodiment.

[0173] B. Sensor Device The present disclosure provides a sensor device including the above-described solid-state quantum sensor module. The sensor device of the present disclosure can be miniaturized because it includes the above-described solid-state quantum sensor module.

[0174] 1. Solid-state quantum sensor module The solid-state quantum sensor modules in the present disclosure are the solid-state quantum sensor modules of the first, second and third embodiments described above.

[0175] 2.Other The sensor device of the present disclosure preferably includes a controller for controlling the light source, the microwave field transmitting antenna, and the photodetector, and may also include a data processor for processing the light measurement signal obtained by the photodetector.

[0176] 3.Applications In the present disclosure, the sensor device is preferably a measuring device that measures a magnetic field. Meanwhile, by making the electron spin of the color center interact with the object to be measured, it is possible to investigate not only the magnetic field but also various other information about the object to be measured. Since the electron spin state of the color center changes depending on various factors, such as the electric field from the object to be measured, the temperature of the object to be measured, and mechanical quantities such as mechanical stress (pressure) applied to the object to be measured, by appropriately processing the detected data on the electron spin state after the interaction, it is possible to investigate the electric field, temperature, mechanical quantities, and the like of the object to be measured.

[0177] The present disclosure is not limited to the above-described embodiments. The above-described embodiments are merely examples, and any configuration that is substantially identical to the technical idea described in the claims of the present disclosure and that provides similar effects is included within the technical scope of the present disclosure.

[0178] That is, the present disclosure provides the following inventions.

[0179] [1] a substrate having a first main surface and a second main surface opposite to the first main surface; a solid-state element having a color center located on the first main surface side of the substrate; a light guide plate located between the substrate and the solid-state component; an antenna for transmitting a microwave field; a light source located on the first main surface side of the substrate, the light source emitting light including a first wavelength that excites the color center from a ground state to an excited state; a photodetector located on the first main surface side of the substrate and configured to detect photoluminescence having a second wavelength emitted from the solid-state element; the solid-state element overlaps the microwave field transmitting antenna when viewed along a normal direction of the first main surface of the substrate; A solid-state quantum sensor module, wherein the photodetector does not overlap the microwave field transmitting antenna when viewed along a normal direction of the first main surface of the substrate.

[0180] [2] The solid-state quantum sensor module according to [1], wherein the light source does not overlap with the microwave field transmitting antenna when viewed along a normal direction of the first main surface of the substrate.

[0181] [3] The solid-state quantum sensor module according to [2], wherein the microwave field transmitting antenna is located on the substrate side in the normal direction relative to the light guide plate in a region that overlaps with the light guide plate when viewed along the normal direction of the first main surface of the substrate.

[0182] [4] the microwave field transmission antenna is a transmission antenna that can transmit light including the first wavelength, and the light source overlaps the microwave field transmission antenna when viewed along a normal direction of the first main surface of the substrate; [1] The solid-state quantum sensor module according to [1], wherein the light guide plate is positioned between the light source and the microwave field transmitting antenna in the normal direction in the region where the light source and the microwave field transmitting antenna overlap.

[0183] [5] The solid-state quantum sensor module according to [4], wherein the solid-state quantum sensor module has, in the region where the light source and the microwave field transmitting antenna overlap, the light source, the light guide plate, the microwave field transmitting antenna, and the solid-state element, in this order from the substrate side.

[0184] [6] The solid-state quantum sensor module according to any one of [1] to [5], wherein the solid-state element has a line pattern extending in a direction toward the photodetector.

[0185] [7] The solid-state quantum sensor module according to [6], wherein the solid-state element has a pattern group consisting of a plurality of the line patterns.

[0186] [8] The solid-state quantum sensor module according to [6] or [7], wherein the line pattern in the solid-state element has a photonic mirror structure.

[0187] [9] The solid-state quantum sensor module according to any one of [1] to [8], wherein the end of the solid-state element on the side of the photodetector has a curvature.

[0188]

[10] A solid-state quantum sensor module according to any one of [6] to [8], wherein the line pattern in the solid-state element has a plurality of the color centers positioned side by side at predetermined intervals along a direction toward the photodetector.

[0189]

[11] The solid-state quantum sensor module according to any one of [1] to

[10] , wherein the photodetector and the solid-state element are connected by photonic wire bonding.

[0190]

[12] The solid-state quantum sensor module according to [7], wherein the solid-state element has a plurality of the pattern groups.

[0191]

[13] The solid-state quantum sensor module according to any one of [1] to

[12] , wherein the solid-state element is a diamond having an NV center.

[0192]

[14] The solid-state quantum sensor module according to [3], further comprising a reflective layer located on at least one of the surface of the solid-state element opposite to the surface located on the light guide plate side and the surface of the microwave field transmitting antenna opposite to the surface located on the light guide plate side, the reflective layer reflecting light including the first wavelength.

[0193]

[15] The solid-state quantum sensor module according to [4], further comprising a reflective layer located on the surface of the solid-state element opposite to the surface located on the light guide plate side, the reflective layer reflecting light including the first wavelength.

[0194]

[16] The solid-state quantum sensor module according to any one of [1] to

[15] , further comprising a first optical wavelength selective filter, which is provided within the light guide plate or between the light guide plate and the light source, and which selectively transmits light including the first wavelength.

[0195]

[17] The solid-state quantum sensor module according to any one of [1] to

[16] , further comprising a second optical wavelength selective filter, which is provided within the solid-state element or between the solid-state element and the photodetector, and which selectively transmits light including the second wavelength.

[0196]

[18] the solid-state quantum sensor module has a sensor element structure including the solid-state element; the sensor element structure includes a first optical functional layer, the solid-state element, and a second optical functional layer in this order from the substrate side in a thickness direction; the solid-state component has a plurality of component portions isolated from one another by grooves extending in the thickness direction, the first optical functional layer reflects light of the second wavelength, The solid-state quantum sensor module according to any one of [1] to

[17] , wherein the second optical functional layer transmits and reflects light of the second wavelength.

[0197]

[19] A solid-state quantum sensor module according to any one of [1] to

[18] , wherein at least one of the substrate and the light guide plate has a shielding portion that blocks microwaves emitted from the microwave field transmitting antenna.

[0198]

[20] A sensor device comprising the solid-state quantum sensor module according to any one of [1] to

[19] . [Explanation of symbols]

[0199] 1A, 1B, 1C... Solid-state quantum sensor modules 2... Substrate 3... Antennas for transmitting microwave fields 4... Solid-state devices 4p... Line pattern 5 … light source 6 … Light guide plate 7...Photodetector 8a,8b,19… Reflective layer 9a, 9b, 20... Wavelength selection filters 10a,10b,21a,21b… Shielding part 11... Polymer waveguide 12... Blackout wall 14...Through electrode layer 15...Conductive layer 16... Reflective mirror 41... Luminous area 42...Connection area 50... Sensor element structure 52...first optical functional layer 52a...Low refractive index layer 52b...High refractive index layer 53... Solid-state devices 54…Second optical functional layer 55... Thickness adjustment layer 60… Optical waveguide 61... Core layer 62... Cladding layer B... Bath cavity C... Pattern group O1,O2… void group

Claims

[Claim 1] a substrate having a first main surface and a second main surface opposite the first main surface; a solid-state element having a color center located on the first main surface side of the substrate; a light guide plate located between the substrate and the solid-state component; an antenna for transmitting a microwave field; a light source located on the first main surface side of the substrate, the light source emitting light including a first wavelength that excites the color center from a ground state to an excited state; a photodetector located on the first main surface side of the substrate and configured to detect photoluminescence having a second wavelength emitted from the solid-state element; the solid-state element overlaps the microwave field transmitting antenna when viewed along a normal direction of the first main surface of the substrate; A solid-state quantum sensor module, wherein the photodetector does not overlap the microwave field transmitting antenna when viewed along a direction normal to the first main surface of the substrate.

Images